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IRFL024NTRPBF IRFL024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BD84F5CA48F1A303005056AB0C4F&compId=irfl024npbf.pdf?ci_sign=82149718abf7d65abc0cc3f966ed8e67d81b09e0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IGP40N65F5XKSA1 IGP40N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 474 Stücke:
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21+3.43 EUR
22+3.3 EUR
26+2.76 EUR
Mindestbestellmenge: 21
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IGP40N65H5XKSA1 IGP40N65H5XKSA1 INFINEON TECHNOLOGIES DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 548 Stücke:
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28+2.57 EUR
33+2.19 EUR
50+1.93 EUR
100+1.74 EUR
500+1.62 EUR
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IGW40N65F5FKSA1 IGW40N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 35 Stücke:
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19+3.8 EUR
22+3.36 EUR
24+3.03 EUR
30+2.73 EUR
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IGW40N65H5FKSA1 IGW40N65H5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF18CC50EC600D5&compId=IGW40N65H5FKSA1.pdf?ci_sign=ae5af7233e9af26b6ec8388b5d40301b249f336e Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 276 Stücke:
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17+4.46 EUR
19+3.93 EUR
30+3.5 EUR
120+3.19 EUR
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IHW40N65R5XKSA1 IHW40N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCF82A829F1820&compId=IHW40N65R5.pdf?ci_sign=f2b3df89ecc5884a555765950a699d043f13b658 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
auf Bestellung 58 Stücke:
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27+2.67 EUR
34+2.13 EUR
42+1.72 EUR
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IHW40N65R6XKSA1 IHW40N65R6XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 177 Stücke:
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18+4.06 EUR
27+2.69 EUR
30+2.56 EUR
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IKB40N65EF5ATMA1 IKB40N65EF5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7954CB00F820&compId=IKB40N65EF5.pdf?ci_sign=f62162fca50ae64d7b1994688492f8e798f89f56 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65EH5ATMA1 IKB40N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7FC31BBF5820&compId=IKB40N65EH5.pdf?ci_sign=ae23714c68ac95b418155dee932388aa2c4eed0f Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65ES5ATMA1 IKB40N65ES5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD86BB011BB820&compId=IKB40N65ES5.pdf?ci_sign=772e35322d60b6684f9f2ae2275e07e31bb27b1c Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
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IKP40N65F5XKSA1 IKP40N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A7B8FBEA51CC&compId=IKP40N65F5-DTE.pdf?ci_sign=445701938249e516efd9fc137d2072b8601a1d3d Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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IKP40N65H5XKSA1 IKP40N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A9938764B1CC&compId=IKP40N65H5-DTE.pdf?ci_sign=aaa5629aac0ce8bc2e59854c8255ed0825945672 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IKW40N65ES5XKSA1 IKW40N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF28E61AB05D820&compId=IKW40N65ES5.pdf?ci_sign=4adce4e3a11ecfbeb9d95624cdd00aee97ed9ad9 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKW40N65F5FKSA1 IKW40N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4BFFA429191CC&compId=IKW40N65F5-DTE.pdf?ci_sign=9ce24fa87b9c244017aa425e6305975292440533 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.33 EUR
23+3.16 EUR
25+2.86 EUR
30+2.46 EUR
60+2.27 EUR
Mindestbestellmenge: 17
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IKW40N65H5FKSA1 IKW40N65H5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4C1883E46B1CC&compId=IKW40N65H5-DTE.pdf?ci_sign=07db0e40e0e5e1d8beab9abb10b4f936980c3b7b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.12 EUR
18+4.03 EUR
21+3.49 EUR
30+3.16 EUR
60+2.95 EUR
Mindestbestellmenge: 14
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IKW40N65WR5XKSA1 IKW40N65WR5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5DC9EFEF4D3D7&compId=IKW40N65WR5.pdf?ci_sign=b3130abe7ac391a15c16949e20e522279c4b214b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
auf Bestellung 27 Stücke:
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21+3.5 EUR
25+2.96 EUR
27+2.66 EUR
Mindestbestellmenge: 21
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BSP613PH6327XTSA1 BSP613PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921C2619F071CC&compId=BSP613PH6327XTSA1-dte.pdf?ci_sign=723408d9febe3aa5b901341db3481f207e9054ff Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Case: PG-SOT223
auf Bestellung 748 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
78+0.92 EUR
88+0.82 EUR
100+0.75 EUR
Mindestbestellmenge: 40
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SN7002WH6327XTSA1 SN7002WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A85484C47E310B&compId=SN7002WH6327XTSA1.pdf?ci_sign=99f37472360a87eec8acb72bf5b0b8d7370dfbd3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2027 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
455+0.16 EUR
650+0.11 EUR
759+0.094 EUR
1049+0.068 EUR
1109+0.064 EUR
1153+0.062 EUR
Mindestbestellmenge: 313
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IR2125PBF IR2125PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD343CF1A6F5005056AB5A8F&compId=ir2125.pdf?ci_sign=fc623d6f605dc7bc7e85d06d16abb2dbd919b7f4 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
20+3.58 EUR
25+2.95 EUR
27+2.69 EUR
50+2.53 EUR
100+2.43 EUR
Mindestbestellmenge: 19
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IR2125SPBF IR2125SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD87EC7AFA215EA&compId=IR2125SPBF.pdf?ci_sign=b60eafeb4583121eca344b2f0d5705418b1dc179 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.76 EUR
28+2.65 EUR
45+2.53 EUR
90+2.42 EUR
270+2.36 EUR
Mindestbestellmenge: 26
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BAS21E6327HTSA1 BAS21E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0 Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT23; Ufmax: 1.25V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.35W
auf Bestellung 2846 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
500+0.14 EUR
589+0.12 EUR
727+0.098 EUR
854+0.084 EUR
995+0.072 EUR
1389+0.051 EUR
1462+0.049 EUR
Mindestbestellmenge: 358
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IPT015N10N5ATMA1 IPT015N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAD7554B3411C&compId=IPT015N10N5-DTE.pdf?ci_sign=81070ebcf3bdd89d929519f2630c51174d0da1da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4310ZPBF IRFP4310ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB2FF1A6F5005056AB5A8F&compId=irfp4310zpbf.pdf?ci_sign=1ae062df49e0450216242d86612a06505c4d23ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.23 EUR
26+2.77 EUR
28+2.62 EUR
Mindestbestellmenge: 17
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AUIRG4PH50S AUIRG4PH50S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB96F76D7618FA40C7&compId=auirg4ph50s.pdf?ci_sign=06bd4ffeec9e52c7556a5dcb27d76d7567cc3019 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 227nC
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Produkt ist nicht verfügbar
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IPA045N10N3GXKSA1 IPA045N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4AC450E1A11C&compId=IPA045N10N3G-DTE.pdf?ci_sign=cacdf50fb45e686d4ac5b40c07270232aecea7b0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI045N10N3GXKSA1 IPI045N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF2573C60011C&compId=IPI045N10N3G-DTE.pdf?ci_sign=b4e4845dad6a9df60a38fee76a77a3ad8eb67e42 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP045N10N3GXKSA1 IPP045N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB96DF37F3411C&compId=IPP045N10N3G-DTE.pdf?ci_sign=ea6e6be4aa0c58f3890b4faaf475c4c11acc98f2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
36+2.02 EUR
46+1.57 EUR
49+1.49 EUR
Mindestbestellmenge: 32
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IRF7319TRPBF IRF7319TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219E4670C7E3F1A303005056AB0C4F&compId=irf7319pbf.pdf?ci_sign=930d6cef5388477ac5f751b53c8900a39bc7c132 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD031N06L3GATMA1 IPD031N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAAC938B42011C&compId=IPD031N06L3G-DTE.pdf?ci_sign=956ec9d4fd9e72f0920c828b3865ef21092a25df Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 887 Stücke:
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28+2.56 EUR
31+2.32 EUR
38+1.9 EUR
40+1.8 EUR
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IRS20957STRPBF IRS20957STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE991C5A14E315F78BF&compId=IRS20957S.pdf?ci_sign=22bf15a378893f041d4941ea0b4aa473f9108955 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 1184 Stücke:
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22+3.3 EUR
28+2.57 EUR
29+2.5 EUR
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IRF2907ZPBF IRF2907ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5FD2406001F1A303005056AB0C4F&compId=irf2907zpbf.pdf?ci_sign=d9930ff1f83e629ad9856e6d356b20e0d58e4614 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
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16+4.68 EUR
29+2.47 EUR
30+2.39 EUR
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IRFS3207TRLPBF IRFS3207TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 180A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4010TRLPBF IRFS4010TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BD2687D720A745&compId=IRFS4010TRLPBF.pdf?ci_sign=496ea67e3c29131ec26750b00389f7c763cf8c45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP110N20N3GXKSA1 IPP110N20N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC867EB270211C&compId=IPP110N20N3G-DTE.pdf?ci_sign=431a306c7efcf431ff4c7879912e470f4ddd5a21 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 23 Stücke:
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8+9.35 EUR
11+6.52 EUR
12+6.18 EUR
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BCR162E6327 BCR162E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58689C0D2E469&compId=BCR162.pdf?ci_sign=6c9bbf739143f7a57c3e9cac63723791f738730e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 20 Stücke:
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20+3.58 EUR
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BCR166E6327 BCR166E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5836521750469&compId=BCR166.pdf?ci_sign=3fa9723f756af0d24d4a7bd47786e2a7dde80b4b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 4.7kΩ
Frequency: 160MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
264+0.27 EUR
342+0.21 EUR
357+0.2 EUR
Mindestbestellmenge: 167
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IPP032N06N3GXKSA1 IPP032N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98A6C6030411C&compId=IPP032N06N3G-DTE.pdf?ci_sign=34183e67dc90345bcb6807fa4748e12435f87288 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.99 EUR
31+2.32 EUR
36+2 EUR
42+1.7 EUR
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IRFP4227PBF IRFP4227PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB1AF1A6F5005056AB5A8F&compId=irfp4227pbf.pdf?ci_sign=865a681e1ae387ed345fa57ca87cba44063b82e6 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP3710PBF IRFP3710PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB05F1A6F5005056AB5A8F&compId=irfp3710.pdf?ci_sign=0d505afbb98c91b5b4639168accbe9a1a6198538 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 182 Stücke:
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31+2.33 EUR
Mindestbestellmenge: 31
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DZ1070N18K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 1.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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IRFU120NPBF IRFU120NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E77534B73F1A6F5005056AB5A8F&compId=irfr120n.pdf?ci_sign=d29e3fc0b3033ac4ff84bc1b06afd32fd73263e0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.26 EUR
110+0.65 EUR
121+0.59 EUR
130+0.55 EUR
134+0.54 EUR
Mindestbestellmenge: 57
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IRF7316TRPBF IRF7316TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219E0768620AF1A303005056AB0C4F&compId=irf7316pbf.pdf?ci_sign=f3ac06c6dfbd1b2e65f97e10a01cbbc54ab17c25 description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4896 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
66+1.1 EUR
92+0.78 EUR
106+0.68 EUR
200+0.6 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.44 EUR
4000+0.43 EUR
Mindestbestellmenge: 48
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AUIRF7316QTR AUIRF7316QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D742CF1A6F5005056AB5A8F&compId=auirf7316q.pdf?ci_sign=af9bd21a38321e4c969ec22e73714e95cc759dd5 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Produkt ist nicht verfügbar
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IRG4PH20KDPBF IRG4PH20KDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D5D15F7C3FF1A303005056AB0C4F&compId=irg4ph20kdpbf.pdf?ci_sign=73cf103f6ec1f50e5465b4ed37507bf31c4bf8af Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRFS31N20DTRLP IRFS31N20DTRLP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B2D2486825F1A303005056AB0C4F&compId=irfb31n20dpbf.pdf?ci_sign=ed3075155006186cadb71ae9521f3327718e6583 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR8726TRPBF IRLR8726TRPBF INFINEON TECHNOLOGIES irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 340A
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
auf Bestellung 1578 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
168+0.43 EUR
190+0.38 EUR
243+0.29 EUR
257+0.28 EUR
Mindestbestellmenge: 148
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IRLR8743TRPBF IRLR8743TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2228120F8A1E7F1A303005056AB0C4F&compId=irlr8743pbf.pdf?ci_sign=13caac950d62003a7670c9a3bc787dc6b4dae60e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2000 Stücke:
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2000+1.04 EUR
Mindestbestellmenge: 2000
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IRFZ24NPBF IRFZ24NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055A2F1A6F5005056AB5A8F&compId=irfz24n.pdf?ci_sign=035e258bd6fdc5de7520892f865a0f577cbf21f3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
165+0.43 EUR
175+0.41 EUR
184+0.39 EUR
192+0.37 EUR
Mindestbestellmenge: 120
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ICE2QR2280ZXKLA1
+1
 		ICE2QR2280ZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9CA1DEB7370760C7&compId=ICE2QR2280Z.pdf?ci_sign=0afed20d41bae5cd14e264b6ccdd85b7a6c8c567 Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP7; 10.5÷25VDC; SMPS; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Frequency: 39...65kHz
Operating voltage: 10.5...25V DC
Application: SMPS
Breakdown voltage: 800V
Input voltage: 85...265V
Topology: flyback
Produkt ist nicht verfügbar
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IR2110PBF IR2110PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: DIP14
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.4 EUR
24+3 EUR
28+2.63 EUR
29+2.47 EUR
50+2.37 EUR
100+2.26 EUR
250+2.2 EUR
Mindestbestellmenge: 22
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IR2110SPBF IR2110SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.1 EUR
23+3.13 EUR
25+2.86 EUR
45+2.69 EUR
135+2.37 EUR
270+2.19 EUR
Mindestbestellmenge: 18
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IR2110STRPBF IR2110STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFF28572095EA&compId=IR2110STRPBF.pdf?ci_sign=df9d8034c817d5f92fb697b53c8f2c84160d7ab0 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: reel; tape
Turn-on time: 145ns
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.2 EUR
25+2.9 EUR
30+2.39 EUR
33+2.2 EUR
50+2.09 EUR
100+1.99 EUR
250+1.87 EUR
Mindestbestellmenge: 23
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IHW20N135R5XKSA1 IHW20N135R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC621B74C57820&compId=IHW20N135R5.pdf?ci_sign=3482e7577980c28fddc8870bc3e93fab375fa327 Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
33+2.2 EUR
35+2.09 EUR
60+2.04 EUR
120+2 EUR
Mindestbestellmenge: 21
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1EDN7512BXTSA1 1EDN7512BXTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA6801DE546FA40D3&compId=1EDN751x_1EDN851x.pdf?ci_sign=f7b6a61fa03f50b5c2e4aa8ce8e4947eacc724c2 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
auf Bestellung 1921 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
123+0.58 EUR
Mindestbestellmenge: 114
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IRLML0040TRPBF IRLML0040TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227B695F4D11F1A303005056AB0C4F&compId=irlml0040pbf.pdf?ci_sign=5d1842c3e30491551ce56d3423793e0f8c415056 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 55810 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
221+0.32 EUR
317+0.23 EUR
371+0.19 EUR
527+0.14 EUR
1000+0.12 EUR
3000+0.099 EUR
6000+0.089 EUR
9000+0.084 EUR
Mindestbestellmenge: 152
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IRLML0100TRPBF IRLML0100TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825E0F1A6F5005056AB5A8F&compId=irlml0100pbf.pdf?ci_sign=bdf83814bed85f72f3cd88c4059bcf2266d07f53 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 11865 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
220+0.33 EUR
293+0.24 EUR
332+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 152
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IRLML6244TRPBF IRLML6244TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227BEF25F70EF1A303005056AB0C4F&compId=irlml6244pbf.pdf?ci_sign=9e9a5be7e3521f0951b398d6655e0c43901db19e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.9nC
On-state resistance: 21mΩ
Gate-source voltage: ±12V
auf Bestellung 4136 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
250+0.29 EUR
304+0.24 EUR
394+0.18 EUR
472+0.15 EUR
685+0.1 EUR
1000+0.093 EUR
3000+0.079 EUR
Mindestbestellmenge: 162
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IRLML6246TRPBF IRLML6246TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C073DE4D1F1A303005056AB0C4F&compId=irlml6246pbf.pdf?ci_sign=081a27482ca02397f5d07cd5b22cc57d56db8087 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3.5nC
On-state resistance: 46mΩ
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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IRLML6346TRPBF IRLML6346TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C53954049F1A303005056AB0C4F&compId=irlml6346pbf.pdf?ci_sign=f015b0982e28988fc6ffca7b5cd078a776e1cb3e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.9nC
On-state resistance: 80mΩ
Gate-source voltage: ±12V
Pulsed drain current: 17A
auf Bestellung 9193 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
268+0.27 EUR
404+0.18 EUR
477+0.15 EUR
582+0.12 EUR
650+0.11 EUR
1000+0.099 EUR
Mindestbestellmenge: 179
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BC848BE6327HTSA1 BC848BE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
1140+0.064 EUR
1260+0.057 EUR
1420+0.05 EUR
Mindestbestellmenge: 1140
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IRFL024NTRPBF pVersion=0046&contRep=ZT&docId=E221BD84F5CA48F1A303005056AB0C4F&compId=irfl024npbf.pdf?ci_sign=82149718abf7d65abc0cc3f966ed8e67d81b09e0
IRFL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGP40N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8
IGP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
22+3.3 EUR
26+2.76 EUR
Mindestbestellmenge: 21
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IGP40N65H5XKSA1 DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6
IGP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
33+2.19 EUR
50+1.93 EUR
100+1.74 EUR
500+1.62 EUR
Mindestbestellmenge: 28
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IGW40N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8
IGW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.8 EUR
22+3.36 EUR
24+3.03 EUR
30+2.73 EUR
Mindestbestellmenge: 19
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IGW40N65H5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF18CC50EC600D5&compId=IGW40N65H5FKSA1.pdf?ci_sign=ae5af7233e9af26b6ec8388b5d40301b249f336e
IGW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
19+3.93 EUR
30+3.5 EUR
120+3.19 EUR
Mindestbestellmenge: 17
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IHW40N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCF82A829F1820&compId=IHW40N65R5.pdf?ci_sign=f2b3df89ecc5884a555765950a699d043f13b658
IHW40N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
34+2.13 EUR
42+1.72 EUR
Mindestbestellmenge: 27
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IHW40N65R6XKSA1 Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275
IHW40N65R6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
27+2.69 EUR
30+2.56 EUR
Mindestbestellmenge: 18
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IKB40N65EF5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7954CB00F820&compId=IKB40N65EF5.pdf?ci_sign=f62162fca50ae64d7b1994688492f8e798f89f56
IKB40N65EF5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD7FC31BBF5820&compId=IKB40N65EH5.pdf?ci_sign=ae23714c68ac95b418155dee932388aa2c4eed0f
IKB40N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65ES5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD86BB011BB820&compId=IKB40N65ES5.pdf?ci_sign=772e35322d60b6684f9f2ae2275e07e31bb27b1c
IKB40N65ES5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A7B8FBEA51CC&compId=IKP40N65F5-DTE.pdf?ci_sign=445701938249e516efd9fc137d2072b8601a1d3d
IKP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A9938764B1CC&compId=IKP40N65H5-DTE.pdf?ci_sign=aaa5629aac0ce8bc2e59854c8255ed0825945672
IKP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IKW40N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF28E61AB05D820&compId=IKW40N65ES5.pdf?ci_sign=4adce4e3a11ecfbeb9d95624cdd00aee97ed9ad9
IKW40N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4BFFA429191CC&compId=IKW40N65F5-DTE.pdf?ci_sign=9ce24fa87b9c244017aa425e6305975292440533
IKW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
23+3.16 EUR
25+2.86 EUR
30+2.46 EUR
60+2.27 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65H5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4C1883E46B1CC&compId=IKW40N65H5-DTE.pdf?ci_sign=07db0e40e0e5e1d8beab9abb10b4f936980c3b7b
IKW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.12 EUR
18+4.03 EUR
21+3.49 EUR
30+3.16 EUR
60+2.95 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65WR5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5DC9EFEF4D3D7&compId=IKW40N65WR5.pdf?ci_sign=b3130abe7ac391a15c16949e20e522279c4b214b
IKW40N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.5 EUR
25+2.96 EUR
27+2.66 EUR
Mindestbestellmenge: 21
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BSP613PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921C2619F071CC&compId=BSP613PH6327XTSA1-dte.pdf?ci_sign=723408d9febe3aa5b901341db3481f207e9054ff
BSP613PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Case: PG-SOT223
auf Bestellung 748 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
78+0.92 EUR
88+0.82 EUR
100+0.75 EUR
Mindestbestellmenge: 40
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SN7002WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A85484C47E310B&compId=SN7002WH6327XTSA1.pdf?ci_sign=99f37472360a87eec8acb72bf5b0b8d7370dfbd3
SN7002WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2027 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
455+0.16 EUR
650+0.11 EUR
759+0.094 EUR
1049+0.068 EUR
1109+0.064 EUR
1153+0.062 EUR
Mindestbestellmenge: 313
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IR2125PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD343CF1A6F5005056AB5A8F&compId=ir2125.pdf?ci_sign=fc623d6f605dc7bc7e85d06d16abb2dbd919b7f4
IR2125PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
20+3.58 EUR
25+2.95 EUR
27+2.69 EUR
50+2.53 EUR
100+2.43 EUR
Mindestbestellmenge: 19
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IR2125SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD87EC7AFA215EA&compId=IR2125SPBF.pdf?ci_sign=b60eafeb4583121eca344b2f0d5705418b1dc179
IR2125SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
28+2.65 EUR
45+2.53 EUR
90+2.42 EUR
270+2.36 EUR
Mindestbestellmenge: 26
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BAS21E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0
BAS21E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT23; Ufmax: 1.25V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.35W
auf Bestellung 2846 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
500+0.14 EUR
589+0.12 EUR
727+0.098 EUR
854+0.084 EUR
995+0.072 EUR
1389+0.051 EUR
1462+0.049 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
IPT015N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAD7554B3411C&compId=IPT015N10N5-DTE.pdf?ci_sign=81070ebcf3bdd89d929519f2630c51174d0da1da
IPT015N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4310ZPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB2FF1A6F5005056AB5A8F&compId=irfp4310zpbf.pdf?ci_sign=1ae062df49e0450216242d86612a06505c4d23ec
IRFP4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
26+2.77 EUR
28+2.62 EUR
Mindestbestellmenge: 17
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AUIRG4PH50S pVersion=0046&contRep=ZT&docId=005056AB90B41EDB96F76D7618FA40C7&compId=auirg4ph50s.pdf?ci_sign=06bd4ffeec9e52c7556a5dcb27d76d7567cc3019
AUIRG4PH50S
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 227nC
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA045N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4AC450E1A11C&compId=IPA045N10N3G-DTE.pdf?ci_sign=cacdf50fb45e686d4ac5b40c07270232aecea7b0
IPA045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI045N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF2573C60011C&compId=IPI045N10N3G-DTE.pdf?ci_sign=b4e4845dad6a9df60a38fee76a77a3ad8eb67e42
IPI045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP045N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB96DF37F3411C&compId=IPP045N10N3G-DTE.pdf?ci_sign=ea6e6be4aa0c58f3890b4faaf475c4c11acc98f2
IPP045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
36+2.02 EUR
46+1.57 EUR
49+1.49 EUR
Mindestbestellmenge: 32
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IRF7319TRPBF description pVersion=0046&contRep=ZT&docId=E2219E4670C7E3F1A303005056AB0C4F&compId=irf7319pbf.pdf?ci_sign=930d6cef5388477ac5f751b53c8900a39bc7c132
IRF7319TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD031N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAAC938B42011C&compId=IPD031N06L3G-DTE.pdf?ci_sign=956ec9d4fd9e72f0920c828b3865ef21092a25df
IPD031N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 887 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
31+2.32 EUR
38+1.9 EUR
40+1.8 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRS20957STRPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE991C5A14E315F78BF&compId=IRS20957S.pdf?ci_sign=22bf15a378893f041d4941ea0b4aa473f9108955
IRS20957STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 1184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
28+2.57 EUR
29+2.5 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRF2907ZPBF pVersion=0046&contRep=ZT&docId=E21F5FD2406001F1A303005056AB0C4F&compId=irf2907zpbf.pdf?ci_sign=d9930ff1f83e629ad9856e6d356b20e0d58e4614
IRF2907ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.68 EUR
29+2.47 EUR
30+2.39 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRFS3207TRLPBF pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b
IRFS3207TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 180A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4010TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BD2687D720A745&compId=IRFS4010TRLPBF.pdf?ci_sign=496ea67e3c29131ec26750b00389f7c763cf8c45
IRFS4010TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP110N20N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC867EB270211C&compId=IPP110N20N3G-DTE.pdf?ci_sign=431a306c7efcf431ff4c7879912e470f4ddd5a21
IPP110N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.35 EUR
11+6.52 EUR
12+6.18 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BCR162E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58689C0D2E469&compId=BCR162.pdf?ci_sign=6c9bbf739143f7a57c3e9cac63723791f738730e
BCR162E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BCR166E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5836521750469&compId=BCR166.pdf?ci_sign=3fa9723f756af0d24d4a7bd47786e2a7dde80b4b
BCR166E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 4.7kΩ
Frequency: 160MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
264+0.27 EUR
342+0.21 EUR
357+0.2 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IPP032N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98A6C6030411C&compId=IPP032N06N3G-DTE.pdf?ci_sign=34183e67dc90345bcb6807fa4748e12435f87288
IPP032N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
31+2.32 EUR
36+2 EUR
42+1.7 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4227PBF description pVersion=0046&contRep=ZT&docId=E1C04E653ACB1AF1A6F5005056AB5A8F&compId=irfp4227pbf.pdf?ci_sign=865a681e1ae387ed345fa57ca87cba44063b82e6
IRFP4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3710PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB05F1A6F5005056AB5A8F&compId=irfp3710.pdf?ci_sign=0d505afbb98c91b5b4639168accbe9a1a6198538
IRFP3710PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
DZ1070N18K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 1.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU120NPBF pVersion=0046&contRep=ZT&docId=E1C04E77534B73F1A6F5005056AB5A8F&compId=irfr120n.pdf?ci_sign=d29e3fc0b3033ac4ff84bc1b06afd32fd73263e0
IRFU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
110+0.65 EUR
121+0.59 EUR
130+0.55 EUR
134+0.54 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
IRF7316TRPBF description pVersion=0046&contRep=ZT&docId=E2219E0768620AF1A303005056AB0C4F&compId=irf7316pbf.pdf?ci_sign=f3ac06c6dfbd1b2e65f97e10a01cbbc54ab17c25
IRF7316TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4896 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
66+1.1 EUR
92+0.78 EUR
106+0.68 EUR
200+0.6 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.44 EUR
4000+0.43 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7316QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D742CF1A6F5005056AB5A8F&compId=auirf7316q.pdf?ci_sign=af9bd21a38321e4c969ec22e73714e95cc759dd5
AUIRF7316QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PH20KDPBF pVersion=0046&contRep=ZT&docId=E221D5D15F7C3FF1A303005056AB0C4F&compId=irg4ph20kdpbf.pdf?ci_sign=73cf103f6ec1f50e5465b4ed37507bf31c4bf8af
IRG4PH20KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS31N20DTRLP pVersion=0046&contRep=ZT&docId=E221B2D2486825F1A303005056AB0C4F&compId=irfb31n20dpbf.pdf?ci_sign=ed3075155006186cadb71ae9521f3327718e6583
IRFS31N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 340A
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
auf Bestellung 1578 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
168+0.43 EUR
190+0.38 EUR
243+0.29 EUR
257+0.28 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8743TRPBF pVersion=0046&contRep=ZT&docId=E2228120F8A1E7F1A303005056AB0C4F&compId=irlr8743pbf.pdf?ci_sign=13caac950d62003a7670c9a3bc787dc6b4dae60e
IRLR8743TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+1.04 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ24NPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D5055A2F1A6F5005056AB5A8F&compId=irfz24n.pdf?ci_sign=035e258bd6fdc5de7520892f865a0f577cbf21f3
IRFZ24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
165+0.43 EUR
175+0.41 EUR
184+0.39 EUR
192+0.37 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
ICE2QR2280ZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9CA1DEB7370760C7&compId=ICE2QR2280Z.pdf?ci_sign=0afed20d41bae5cd14e264b6ccdd85b7a6c8c567
ICE2QR2280ZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP7; 10.5÷25VDC; SMPS; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Frequency: 39...65kHz
Operating voltage: 10.5...25V DC
Application: SMPS
Breakdown voltage: 800V
Input voltage: 85...265V
Topology: flyback
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2110PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee
IR2110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: DIP14
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
24+3 EUR
28+2.63 EUR
29+2.47 EUR
50+2.37 EUR
100+2.26 EUR
250+2.2 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR2110SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee
IR2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.1 EUR
23+3.13 EUR
25+2.86 EUR
45+2.69 EUR
135+2.37 EUR
270+2.19 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IR2110STRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFF28572095EA&compId=IR2110STRPBF.pdf?ci_sign=df9d8034c817d5f92fb697b53c8f2c84160d7ab0
IR2110STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: reel; tape
Turn-on time: 145ns
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
25+2.9 EUR
30+2.39 EUR
33+2.2 EUR
50+2.09 EUR
100+1.99 EUR
250+1.87 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N135R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC621B74C57820&compId=IHW20N135R5.pdf?ci_sign=3482e7577980c28fddc8870bc3e93fab375fa327
IHW20N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
33+2.2 EUR
35+2.09 EUR
60+2.04 EUR
120+2 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
1EDN7512BXTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA6801DE546FA40D3&compId=1EDN751x_1EDN851x.pdf?ci_sign=f7b6a61fa03f50b5c2e4aa8ce8e4947eacc724c2
1EDN7512BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
auf Bestellung 1921 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
123+0.58 EUR
Mindestbestellmenge: 114
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IRLML0040TRPBF pVersion=0046&contRep=ZT&docId=E2227B695F4D11F1A303005056AB0C4F&compId=irlml0040pbf.pdf?ci_sign=5d1842c3e30491551ce56d3423793e0f8c415056
IRLML0040TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 55810 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
221+0.32 EUR
317+0.23 EUR
371+0.19 EUR
527+0.14 EUR
1000+0.12 EUR
3000+0.099 EUR
6000+0.089 EUR
9000+0.084 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0100TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825E0F1A6F5005056AB5A8F&compId=irlml0100pbf.pdf?ci_sign=bdf83814bed85f72f3cd88c4059bcf2266d07f53
IRLML0100TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 11865 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
220+0.33 EUR
293+0.24 EUR
332+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6244TRPBF pVersion=0046&contRep=ZT&docId=E2227BEF25F70EF1A303005056AB0C4F&compId=irlml6244pbf.pdf?ci_sign=9e9a5be7e3521f0951b398d6655e0c43901db19e
IRLML6244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.9nC
On-state resistance: 21mΩ
Gate-source voltage: ±12V
auf Bestellung 4136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
250+0.29 EUR
304+0.24 EUR
394+0.18 EUR
472+0.15 EUR
685+0.1 EUR
1000+0.093 EUR
3000+0.079 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6246TRPBF pVersion=0046&contRep=ZT&docId=E2227C073DE4D1F1A303005056AB0C4F&compId=irlml6246pbf.pdf?ci_sign=081a27482ca02397f5d07cd5b22cc57d56db8087
IRLML6246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3.5nC
On-state resistance: 46mΩ
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6346TRPBF pVersion=0046&contRep=ZT&docId=E2227C53954049F1A303005056AB0C4F&compId=irlml6346pbf.pdf?ci_sign=f015b0982e28988fc6ffca7b5cd078a776e1cb3e
IRLML6346TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.9nC
On-state resistance: 80mΩ
Gate-source voltage: ±12V
Pulsed drain current: 17A
auf Bestellung 9193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
268+0.27 EUR
404+0.18 EUR
477+0.15 EUR
582+0.12 EUR
650+0.11 EUR
1000+0.099 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BC848BE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC848BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1140+0.064 EUR
1260+0.057 EUR
1420+0.05 EUR
Mindestbestellmenge: 1140
Im Einkaufswagen  Stück im Wert von  UAH
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