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IKW40N60H3FKSA1 IKW40N60H3FKSA1 INFINEON TECHNOLOGIES IKW40N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Turn-on time: 52ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 218ns
Collector current: 40A
auf Bestellung 119 Stücke:
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15+5.05 EUR
17+4.35 EUR
18+4.06 EUR
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BSS138NH6327XTSA2 BSS138NH6327XTSA2 INFINEON TECHNOLOGIES BSS138NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 18299 Stücke:
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313+0.23 EUR
410+0.17 EUR
491+0.15 EUR
763+0.094 EUR
905+0.079 EUR
1244+0.057 EUR
1374+0.052 EUR
3000+0.046 EUR
6000+0.044 EUR
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BSS138NH6433XTMA1 BSS138NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.92A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
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BSC032N04LSATMA1 BSC032N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A633B5E8211C&compId=BSC032N04LS-DTE.pdf?ci_sign=35844659b186770f8aee1366db4c3cb3c76cf2ed Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 52W
Drain current: 83A
Case: PG-TDSON-8
auf Bestellung 1164 Stücke:
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51+1.42 EUR
61+1.19 EUR
69+1.04 EUR
79+0.92 EUR
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BSC034N06NSATMA1 BSC034N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2BC83A04D211C&compId=BSC034N06NS-DTE.pdf?ci_sign=deea794976e163886639f6f5a7407e4daef5c7e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IGW40N60H3FKSA1 IGW40N60H3FKSA1 INFINEON TECHNOLOGIES IGW40N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 306W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Manufacturer series: H3
Collector current: 40A
auf Bestellung 247 Stücke:
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22+3.26 EUR
24+3.07 EUR
25+2.9 EUR
30+2.76 EUR
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IHW40N60RFKSA1 IHW40N60RFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCBDE92FDCF820&compId=IHW40N60RF.pdf?ci_sign=82767ed05928b8e96282a1f045c5bab220a23d94 Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Turn-off time: 217ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IKFW40N60DH3EXKSA1 IKFW40N60DH3EXKSA1 INFINEON TECHNOLOGIES IKFW40N60DH3E.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Turn-on time: 52ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 160ns
Collector current: 28A
Produkt ist nicht verfügbar
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IGP15N60TXKSA1 IGP15N60TXKSA1 INFINEON TECHNOLOGIES IGP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Type of transistor: IGBT
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 23A
Gate-emitter voltage: ±20V
auf Bestellung 104 Stücke:
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31+2.32 EUR
57+1.27 EUR
65+1.1 EUR
100+1.04 EUR
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IRL540NSTRLPBF IRL540NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22275F284EE03F1A303005056AB0C4F&compId=irl540nspbf.pdf?ci_sign=b0faffc4f671cf875c1a91bbe77a35e72b967102 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 118 Stücke:
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40+1.83 EUR
43+1.69 EUR
47+1.53 EUR
51+1.42 EUR
100+1.27 EUR
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IRFB3206GPBF IRFB3206GPBF INFINEON TECHNOLOGIES irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
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23+3.2 EUR
34+2.16 EUR
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IRFB3206PBF IRFB3206PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6BFF1A6F5005056AB5A8F&compId=irfs3206pbf.pdf?ci_sign=1b9ab7ab5a0e7f7a29be1ba6c0d0457a333e87b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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IRLMS6802TRPBF IRLMS6802TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227D6FF78EF1F1A303005056AB0C4F&compId=irlms6802pbf.pdf?ci_sign=b1d046298cbd8012bab5b087e26b2481180c634e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB8743PBF IRLB8743PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582593F1A6F5005056AB5A8F&compId=irlb8743pbf.pdf?ci_sign=9b6b0d7ca245064fadba2c5da0c0447974a20e86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 193 Stücke:
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193+0.37 EUR
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IKW15N120H3FKSA1 IKW15N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4ADAB9D8E51CC&compId=IKW15N120H3-DTE.pdf?ci_sign=5e67717d8537695a7facaef0bb16de80cf14fc4a Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Gate charge: 75nC
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
auf Bestellung 177 Stücke:
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14+5.19 EUR
17+4.46 EUR
18+4.2 EUR
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IRLML6401TRPBF IRLML6401TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582611F1A6F5005056AB5A8F&compId=irlml6401.pdf?ci_sign=8bedbc854eb7229a844e3beb3076098fb21ec847 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 13101 Stücke:
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186+0.39 EUR
266+0.27 EUR
383+0.19 EUR
448+0.16 EUR
616+0.12 EUR
1000+0.1 EUR
3000+0.088 EUR
6000+0.08 EUR
9000+0.077 EUR
Mindestbestellmenge: 186
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BC847CE6327HTSA1 BC847CE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 41 Stücke:
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41+1.74 EUR
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IRFB3607PBF IRFB3607PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6F0F1A6F5005056AB5A8F&compId=irfs3607pbf.pdf?ci_sign=98d0685c947b09aa259e1947e7ed20d67c6bfc89 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 56nC
Kind of package: tube
auf Bestellung 220 Stücke:
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45+1.62 EUR
74+0.98 EUR
85+0.85 EUR
108+0.67 EUR
116+0.62 EUR
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BC857CE6327 BC857CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5DB91A48C6469&compId=BC857SH6327.pdf?ci_sign=9ded2294cfab738e617f38d70595187449824bf3 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 780 Stücke:
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385+0.19 EUR
527+0.14 EUR
780+0.092 EUR
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BC847BE6433HTMA1 BC847BE6433HTMA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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715+0.1 EUR
817+0.088 EUR
966+0.074 EUR
1058+0.068 EUR
2500+0.059 EUR
5000+0.053 EUR
Mindestbestellmenge: 715
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BAT5406WH6327XTSA1 BAT5406WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Case: SOT323
Type of diode: Schottky switching
Load current: 0.2A
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Mounting: SMD
Semiconductor structure: common anode; double
auf Bestellung 23 Stücke:
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IKD03N60RFATMA1 IKD03N60RFATMA1 INFINEON TECHNOLOGIES IKD03N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Turn-on time: 17ns
Turn-off time: 265ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 6A
Pulsed collector current: 7.5A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
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SPU03N60C3BKMA1 SPU03N60C3BKMA1 INFINEON TECHNOLOGIES SP_03N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhancement
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IR2101PBF IR2101PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F559F216DB0F1A303005056AB0C4F&compId=ir2101.pdf?ci_sign=7868ce006c430385a00b1b6ef276ca5826838e52 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 70 Stücke:
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21+3.47 EUR
25+2.97 EUR
27+2.73 EUR
30+2.43 EUR
50+2.26 EUR
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IR2101STRPBF IR2101STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD859AC4CE1F5EA&compId=IR2101SPBF.pdf?ci_sign=cf114e828503fc9421e769ef0cc9eb118ca9e5cf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 2190 Stücke:
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50+1.44 EUR
68+1.06 EUR
75+0.96 EUR
80+0.9 EUR
100+0.87 EUR
Mindestbestellmenge: 50
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IRF7401TRPBF IRF7401TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A19C0486F2F1A303005056AB0C4F&compId=irf7401pbf.pdf?ci_sign=b61442b4f91f387c9ca967f7e1a87d0aceca607f description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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IRF7404TRPBF IRF7404TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A200E3CFFFF1A303005056AB0C4F&compId=irf7404pbf.pdf?ci_sign=a279e693a9c55e7394993c885ef6397ad3e74a7e description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IR2153PBF IR2153PBF INFINEON TECHNOLOGIES ir2153.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Mounting: THT
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
auf Bestellung 119 Stücke:
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30+2.39 EUR
41+1.77 EUR
50+1.56 EUR
100+1.49 EUR
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IR2153SPBF IR2153SPBF INFINEON TECHNOLOGIES ir2153.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
46+1.57 EUR
50+1.46 EUR
95+1.44 EUR
Mindestbestellmenge: 40
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IR2153STRPBF IR2153STRPBF INFINEON TECHNOLOGIES IR2153DPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTS740S2 BTS740S2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD64020DBFAD5EA&compId=BTS740S2.pdf?ci_sign=b9ff1acd5dab2c97ff91b1b5b6eaa731690ef1ae description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Mounting: SMD
Number of channels: 2
Case: SO20-W
Supply voltage: 5...34V DC
On-state resistance: 15mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.55 EUR
11+6.84 EUR
100+5.65 EUR
Mindestbestellmenge: 8
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IRLL014NTRPBF IRLL014NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227AD7F1FDCDF1A303005056AB0C4F&compId=irll014npbf.pdf?ci_sign=1d1f9f334532dd3711cbf8c73e9f89d36ccd8d49 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 7475 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
179+0.4 EUR
232+0.31 EUR
260+0.28 EUR
500+0.25 EUR
1000+0.23 EUR
2500+0.2 EUR
5000+0.18 EUR
Mindestbestellmenge: 122
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IRLL024NTRPBF IRLL024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825B6F1A6F5005056AB5A8F&compId=irll024n.pdf?ci_sign=a7f9a48b2cd1b39663d6bdd21504bf6984076499 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3641 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
126+0.57 EUR
139+0.52 EUR
158+0.45 EUR
175+0.41 EUR
193+0.37 EUR
500+0.29 EUR
1000+0.26 EUR
2500+0.23 EUR
Mindestbestellmenge: 105
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BC850BE6327 BC850BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 7529 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
506+0.14 EUR
767+0.093 EUR
903+0.079 EUR
1137+0.063 EUR
3000+0.054 EUR
Mindestbestellmenge: 358
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BC850CE6327 BC850CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
348+0.2 EUR
Mindestbestellmenge: 348
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IRFR9024NTRLPBF IRFR9024NTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024NTRPBF IRFR9024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3913 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
90+0.8 EUR
129+0.56 EUR
200+0.5 EUR
500+0.44 EUR
1000+0.39 EUR
2000+0.36 EUR
Mindestbestellmenge: 66
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AUIRFR9024NTRL INFINEON TECHNOLOGIES INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Pulsed drain current: -44A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3705NPBF IRL3705NPBF INFINEON TECHNOLOGIES irl3705n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 65.3nC
On-state resistance: 10mΩ
Gate-source voltage: ±16V
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
auf Bestellung 2185 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
43+1.69 EUR
47+1.53 EUR
52+1.39 EUR
100+1.23 EUR
250+1.06 EUR
500+0.94 EUR
1000+0.87 EUR
2000+0.8 EUR
Mindestbestellmenge: 40
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IRL3705NSTRLPBF IRL3705NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22274DD1ABBBBF1A303005056AB0C4F&compId=irl3705nspbf.pdf?ci_sign=def286927a4ec6a16efcd8a4c3fbd0ce993a0cee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705ZSTRLPBF IRL3705ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF112ECD9F715EA&compId=IRL3705ZSTRLPBF.pdf?ci_sign=c916a4aa1628d516334b00db556866bd3c12c24c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB3034PBF IRLB3034PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E895D7E3DF1A6F5005056AB5A8F&compId=irlb3034pbf.pdf?ci_sign=7508af5c90c4bc752a92b5bab13419c960913739 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IRLB3036PBF IRLB3036PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582577F1A6F5005056AB5A8F&compId=irlb3036pbf.pdf?ci_sign=fb0a0d81cd0373dfbb1fe542694c88309414bd06 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 91nC
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.23 EUR
Mindestbestellmenge: 23
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IRLB3813PBF IRLB3813PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58257EF1A6F5005056AB5A8F&compId=irlb3813pbf.pdf?ci_sign=b8af6369f50e2b78444ab244deef2c85b9ccbb1a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 57nC
auf Bestellung 573 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
52+1.39 EUR
54+1.33 EUR
Mindestbestellmenge: 46
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IRLB4030PBF IRLB4030PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582585F1A6F5005056AB5A8F&compId=irlb4030pbf.pdf?ci_sign=9c1dd0d165f7be0768858b97ea06809eb52e6a97 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 87nC
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.83 EUR
20+3.6 EUR
26+2.82 EUR
29+2.47 EUR
50+2.1 EUR
100+1.86 EUR
200+1.77 EUR
Mindestbestellmenge: 19
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IRLB4132PBF IRLB4132PBF INFINEON TECHNOLOGIES IRLB4132PbF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO220AB
Polarisation: unipolar
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 140W
Pulsed drain current: 620A
Kind of channel: enhancement
auf Bestellung 806 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
65+1.11 EUR
102+0.7 EUR
117+0.61 EUR
200+0.55 EUR
250+0.54 EUR
500+0.51 EUR
Mindestbestellmenge: 40
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IRLB8314PBF IRLB8314PBF INFINEON TECHNOLOGIES irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 664A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 839 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
93+0.77 EUR
108+0.67 EUR
115+0.62 EUR
250+0.57 EUR
500+0.52 EUR
Mindestbestellmenge: 49
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IRLB8748PBF IRLB8748PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58259AF1A6F5005056AB5A8F&compId=irlb8748pbf.pdf?ci_sign=2d8572277f7342dea88e1d211ba84d481801601d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 15nC
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
65+1.12 EUR
74+0.97 EUR
89+0.81 EUR
102+0.71 EUR
116+0.62 EUR
500+0.48 EUR
Mindestbestellmenge: 51
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IRF7303TRPBF IRF7303TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F74C2DCE370F1A303005056AB0C4F&compId=irf7303pbf.pdf?ci_sign=a9fcab7b64f09e84c0ca4b84501bec51c69c4040 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7306TRPBF IRF7306TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F751DDD019EF1A303005056AB0C4F&compId=irf7306pbf.pdf?ci_sign=244ded6274750851bd5e8e76cc1513b6407fc75b description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1011 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
71+1.01 EUR
100+0.72 EUR
115+0.63 EUR
250+0.53 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 50
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IRF7309TRPBF IRF7309TRPBF INFINEON TECHNOLOGIES irf7309pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2285 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
92+0.78 EUR
117+0.61 EUR
130+0.55 EUR
200+0.5 EUR
500+0.45 EUR
Mindestbestellmenge: 62
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AUIRF7309QTR AUIRF7309QTR INFINEON TECHNOLOGIES auirf7309q.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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IRLR2905ZTRPBF IRLR2905ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF11ACA61E3B5EA&compId=IRLR2905ZTRPBF.pdf?ci_sign=59e8f0844430a9591a8928366ede90beebafec1a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.12 EUR
83+0.87 EUR
92+0.78 EUR
106+0.67 EUR
118+0.61 EUR
Mindestbestellmenge: 65
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AUIRLR2905ZTRL INFINEON TECHNOLOGIES AUIRLR2905Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR7540TRPBF IRFR7540TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BA14A75BF6469&compId=IRFR7540TRPBF.pdf?ci_sign=2a8c7614e344aeb42fd258726595f737ea02f922 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IGW15N120H3FKSA1 IGW15N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACF653E938BEB1BF&compId=IGW15N120H3-DTE.pdf?ci_sign=bb785fa6984b96b34d09dda036a6fa741b55c450 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
Collector-emitter voltage: 1.2kV
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.18 EUR
23+3.2 EUR
26+2.77 EUR
29+2.52 EUR
30+2.45 EUR
Mindestbestellmenge: 18
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IHW15N120E1XKSA1 IHW15N120E1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB9FA296781820&compId=IHW15N120E1.pdf?ci_sign=476c39c6f7509bba9d8e18c54ceedde48ef8c47d Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Turn-on time: 1940ns
Gate charge: 90nC
Turn-off time: 1450ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 62.2W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.76 EUR
37+1.96 EUR
41+1.76 EUR
Mindestbestellmenge: 26
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IHW15N120R3FKSA1 IHW15N120R3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC54BEBB74D820&compId=IHW15N120R3.pdf?ci_sign=4a3a7bc4b67f8ad8cc77cc34fe03f8e75e2309cc Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Gate charge: 165nC
Turn-off time: 346ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 127W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
25+2.9 EUR
30+2.42 EUR
120+2.23 EUR
Mindestbestellmenge: 19
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IKW15N120BH6XKSA1 IKW15N120BH6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0997F3635D8BF&compId=IKW15N120BH6.pdf?ci_sign=7d5116a5ba65f8a2b5cf2e55505c6de35ec86261 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 92nC
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.5 EUR
25+2.97 EUR
32+2.29 EUR
35+2.06 EUR
Mindestbestellmenge: 21
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IKW15N120T2FKSA1 IKW15N120T2FKSA1 INFINEON TECHNOLOGIES IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 2
Kind of package: tube
Turn-on time: 57ns
Gate charge: 93nC
Turn-off time: 457ns
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 235W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.48 EUR
14+5.25 EUR
30+4.05 EUR
Mindestbestellmenge: 12
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IKW40N60H3FKSA1 IKW40N60H3.pdf
IKW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Turn-on time: 52ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 218ns
Collector current: 40A
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.05 EUR
17+4.35 EUR
18+4.06 EUR
Mindestbestellmenge: 15
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BSS138NH6327XTSA2 BSS138NH6327XTSA2.pdf
BSS138NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 18299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
410+0.17 EUR
491+0.15 EUR
763+0.094 EUR
905+0.079 EUR
1244+0.057 EUR
1374+0.052 EUR
3000+0.046 EUR
6000+0.044 EUR
Mindestbestellmenge: 313
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BSS138NH6433XTMA1 Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb
BSS138NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.92A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC032N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A633B5E8211C&compId=BSC032N04LS-DTE.pdf?ci_sign=35844659b186770f8aee1366db4c3cb3c76cf2ed
BSC032N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 52W
Drain current: 83A
Case: PG-TDSON-8
auf Bestellung 1164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
61+1.19 EUR
69+1.04 EUR
79+0.92 EUR
Mindestbestellmenge: 51
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BSC034N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2BC83A04D211C&compId=BSC034N06NS-DTE.pdf?ci_sign=deea794976e163886639f6f5a7407e4daef5c7e1
BSC034N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IGW40N60H3FKSA1 IGW40N60H3-DTE.pdf
IGW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 306W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Manufacturer series: H3
Collector current: 40A
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.26 EUR
24+3.07 EUR
25+2.9 EUR
30+2.76 EUR
Mindestbestellmenge: 22
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IHW40N60RFKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCBDE92FDCF820&compId=IHW40N60RF.pdf?ci_sign=82767ed05928b8e96282a1f045c5bab220a23d94
IHW40N60RFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Turn-off time: 217ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IKFW40N60DH3EXKSA1 IKFW40N60DH3E.pdf
IKFW40N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Turn-on time: 52ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 160ns
Collector current: 28A
Produkt ist nicht verfügbar
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IGP15N60TXKSA1 IGP15N60T-DTE.pdf
IGP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Type of transistor: IGBT
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 23A
Gate-emitter voltage: ±20V
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
57+1.27 EUR
65+1.1 EUR
100+1.04 EUR
Mindestbestellmenge: 31
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IRL540NSTRLPBF pVersion=0046&contRep=ZT&docId=E22275F284EE03F1A303005056AB0C4F&compId=irl540nspbf.pdf?ci_sign=b0faffc4f671cf875c1a91bbe77a35e72b967102
IRL540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
43+1.69 EUR
47+1.53 EUR
51+1.42 EUR
100+1.27 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3206GPBF irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5
IRFB3206GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
34+2.16 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3206PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6BFF1A6F5005056AB5A8F&compId=irfs3206pbf.pdf?ci_sign=1b9ab7ab5a0e7f7a29be1ba6c0d0457a333e87b2
IRFB3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS6802TRPBF pVersion=0046&contRep=ZT&docId=E2227D6FF78EF1F1A303005056AB0C4F&compId=irlms6802pbf.pdf?ci_sign=b1d046298cbd8012bab5b087e26b2481180c634e
IRLMS6802TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB8743PBF pVersion=0046&contRep=ZT&docId=E1C04E8F582593F1A6F5005056AB5A8F&compId=irlb8743pbf.pdf?ci_sign=9b6b0d7ca245064fadba2c5da0c0447974a20e86
IRLB8743PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4ADAB9D8E51CC&compId=IKW15N120H3-DTE.pdf?ci_sign=5e67717d8537695a7facaef0bb16de80cf14fc4a
IKW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Gate charge: 75nC
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
17+4.46 EUR
18+4.2 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6401TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F582611F1A6F5005056AB5A8F&compId=irlml6401.pdf?ci_sign=8bedbc854eb7229a844e3beb3076098fb21ec847
IRLML6401TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 13101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
266+0.27 EUR
383+0.19 EUR
448+0.16 EUR
616+0.12 EUR
1000+0.1 EUR
3000+0.088 EUR
6000+0.08 EUR
9000+0.077 EUR
Mindestbestellmenge: 186
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BC847CE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC847CE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
Mindestbestellmenge: 41
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IRFB3607PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6F0F1A6F5005056AB5A8F&compId=irfs3607pbf.pdf?ci_sign=98d0685c947b09aa259e1947e7ed20d67c6bfc89
IRFB3607PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 56nC
Kind of package: tube
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
74+0.98 EUR
85+0.85 EUR
108+0.67 EUR
116+0.62 EUR
Mindestbestellmenge: 45
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BC857CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5DB91A48C6469&compId=BC857SH6327.pdf?ci_sign=9ded2294cfab738e617f38d70595187449824bf3
BC857CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
527+0.14 EUR
780+0.092 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BC847BE6433HTMA1 bc847_8_9_bc850.pdf
BC847BE6433HTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 9540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
817+0.088 EUR
966+0.074 EUR
1058+0.068 EUR
2500+0.059 EUR
5000+0.053 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
BAT5406WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5406WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Case: SOT323
Type of diode: Schottky switching
Load current: 0.2A
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Mounting: SMD
Semiconductor structure: common anode; double
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
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IKD03N60RFATMA1 IKD03N60RF.pdf
IKD03N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Turn-on time: 17ns
Turn-off time: 265ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 6A
Pulsed collector current: 7.5A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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SPU03N60C3BKMA1 SP_03N60C3.pdf
SPU03N60C3BKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2101PBF description pVersion=0046&contRep=ZT&docId=E21F559F216DB0F1A303005056AB0C4F&compId=ir2101.pdf?ci_sign=7868ce006c430385a00b1b6ef276ca5826838e52
IR2101PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
25+2.97 EUR
27+2.73 EUR
30+2.43 EUR
50+2.26 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2101STRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD859AC4CE1F5EA&compId=IR2101SPBF.pdf?ci_sign=cf114e828503fc9421e769ef0cc9eb118ca9e5cf
IR2101STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 2190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
68+1.06 EUR
75+0.96 EUR
80+0.9 EUR
100+0.87 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF7401TRPBF description pVersion=0046&contRep=ZT&docId=E221A19C0486F2F1A303005056AB0C4F&compId=irf7401pbf.pdf?ci_sign=b61442b4f91f387c9ca967f7e1a87d0aceca607f
IRF7401TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7404TRPBF description pVersion=0046&contRep=ZT&docId=E221A200E3CFFFF1A303005056AB0C4F&compId=irf7404pbf.pdf?ci_sign=a279e693a9c55e7394993c885ef6397ad3e74a7e
IRF7404TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2153PBF description ir2153.pdf
IR2153PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Mounting: THT
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
41+1.77 EUR
50+1.56 EUR
100+1.49 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IR2153SPBF description ir2153.pdf
IR2153SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
46+1.57 EUR
50+1.46 EUR
95+1.44 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IR2153STRPBF description IR2153DPBF.pdf
IR2153STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS740S2 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD64020DBFAD5EA&compId=BTS740S2.pdf?ci_sign=b9ff1acd5dab2c97ff91b1b5b6eaa731690ef1ae
BTS740S2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Mounting: SMD
Number of channels: 2
Case: SO20-W
Supply voltage: 5...34V DC
On-state resistance: 15mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.55 EUR
11+6.84 EUR
100+5.65 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRLL014NTRPBF description pVersion=0046&contRep=ZT&docId=E2227AD7F1FDCDF1A303005056AB0C4F&compId=irll014npbf.pdf?ci_sign=1d1f9f334532dd3711cbf8c73e9f89d36ccd8d49
IRLL014NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 7475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
179+0.4 EUR
232+0.31 EUR
260+0.28 EUR
500+0.25 EUR
1000+0.23 EUR
2500+0.2 EUR
5000+0.18 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF description pVersion=0046&contRep=ZT&docId=E1C04E8F5825B6F1A6F5005056AB5A8F&compId=irll024n.pdf?ci_sign=a7f9a48b2cd1b39663d6bdd21504bf6984076499
IRLL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3641 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
126+0.57 EUR
139+0.52 EUR
158+0.45 EUR
175+0.41 EUR
193+0.37 EUR
500+0.29 EUR
1000+0.26 EUR
2500+0.23 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
BC850BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832
BC850BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 7529 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
506+0.14 EUR
767+0.093 EUR
903+0.079 EUR
1137+0.063 EUR
3000+0.054 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BC850CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832
BC850CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
348+0.2 EUR
Mindestbestellmenge: 348
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024NTRLPBF pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9
IRFR9024NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024NTRPBF description pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9
IRFR9024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
90+0.8 EUR
129+0.56 EUR
200+0.5 EUR
500+0.44 EUR
1000+0.39 EUR
2000+0.36 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Pulsed drain current: -44A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705NPBF description irl3705n.pdf
IRL3705NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 65.3nC
On-state resistance: 10mΩ
Gate-source voltage: ±16V
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
auf Bestellung 2185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
43+1.69 EUR
47+1.53 EUR
52+1.39 EUR
100+1.23 EUR
250+1.06 EUR
500+0.94 EUR
1000+0.87 EUR
2000+0.8 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705NSTRLPBF pVersion=0046&contRep=ZT&docId=E22274DD1ABBBBF1A303005056AB0C4F&compId=irl3705nspbf.pdf?ci_sign=def286927a4ec6a16efcd8a4c3fbd0ce993a0cee
IRL3705NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705ZSTRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF112ECD9F715EA&compId=IRL3705ZSTRLPBF.pdf?ci_sign=c916a4aa1628d516334b00db556866bd3c12c24c
IRL3705ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3034PBF pVersion=0046&contRep=ZT&docId=E1C04E895D7E3DF1A6F5005056AB5A8F&compId=irlb3034pbf.pdf?ci_sign=7508af5c90c4bc752a92b5bab13419c960913739
IRLB3034PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3036PBF pVersion=0046&contRep=ZT&docId=E1C04E8F582577F1A6F5005056AB5A8F&compId=irlb3036pbf.pdf?ci_sign=fb0a0d81cd0373dfbb1fe542694c88309414bd06
IRLB3036PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 91nC
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3813PBF pVersion=0046&contRep=ZT&docId=E1C04E8F58257EF1A6F5005056AB5A8F&compId=irlb3813pbf.pdf?ci_sign=b8af6369f50e2b78444ab244deef2c85b9ccbb1a
IRLB3813PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 57nC
auf Bestellung 573 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
52+1.39 EUR
54+1.33 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRLB4030PBF pVersion=0046&contRep=ZT&docId=E1C04E8F582585F1A6F5005056AB5A8F&compId=irlb4030pbf.pdf?ci_sign=9c1dd0d165f7be0768858b97ea06809eb52e6a97
IRLB4030PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 87nC
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
20+3.6 EUR
26+2.82 EUR
29+2.47 EUR
50+2.1 EUR
100+1.86 EUR
200+1.77 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IRLB4132PBF IRLB4132PbF.pdf
IRLB4132PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO220AB
Polarisation: unipolar
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 140W
Pulsed drain current: 620A
Kind of channel: enhancement
auf Bestellung 806 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
65+1.11 EUR
102+0.7 EUR
117+0.61 EUR
200+0.55 EUR
250+0.54 EUR
500+0.51 EUR
Mindestbestellmenge: 40
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IRLB8314PBF irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f
IRLB8314PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 664A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 839 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
93+0.77 EUR
108+0.67 EUR
115+0.62 EUR
250+0.57 EUR
500+0.52 EUR
Mindestbestellmenge: 49
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IRLB8748PBF pVersion=0046&contRep=ZT&docId=E1C04E8F58259AF1A6F5005056AB5A8F&compId=irlb8748pbf.pdf?ci_sign=2d8572277f7342dea88e1d211ba84d481801601d
IRLB8748PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 15nC
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
65+1.12 EUR
74+0.97 EUR
89+0.81 EUR
102+0.71 EUR
116+0.62 EUR
500+0.48 EUR
Mindestbestellmenge: 51
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IRF7303TRPBF pVersion=0046&contRep=ZT&docId=E21F74C2DCE370F1A303005056AB0C4F&compId=irf7303pbf.pdf?ci_sign=a9fcab7b64f09e84c0ca4b84501bec51c69c4040
IRF7303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7306TRPBF description pVersion=0046&contRep=ZT&docId=E21F751DDD019EF1A303005056AB0C4F&compId=irf7306pbf.pdf?ci_sign=244ded6274750851bd5e8e76cc1513b6407fc75b
IRF7306TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1011 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
71+1.01 EUR
100+0.72 EUR
115+0.63 EUR
250+0.53 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 50
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IRF7309TRPBF description irf7309pbf.pdf
IRF7309TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
92+0.78 EUR
117+0.61 EUR
130+0.55 EUR
200+0.5 EUR
500+0.45 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7309QTR auirf7309q.pdf
AUIRF7309QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2905ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF11ACA61E3B5EA&compId=IRLR2905ZTRPBF.pdf?ci_sign=59e8f0844430a9591a8928366ede90beebafec1a
IRLR2905ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.12 EUR
83+0.87 EUR
92+0.78 EUR
106+0.67 EUR
118+0.61 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLR2905ZTRL AUIRLR2905Z.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7540TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BA14A75BF6469&compId=IRFR7540TRPBF.pdf?ci_sign=2a8c7614e344aeb42fd258726595f737ea02f922
IRFR7540TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW15N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACF653E938BEB1BF&compId=IGW15N120H3-DTE.pdf?ci_sign=bb785fa6984b96b34d09dda036a6fa741b55c450
IGW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
Collector-emitter voltage: 1.2kV
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.18 EUR
23+3.2 EUR
26+2.77 EUR
29+2.52 EUR
30+2.45 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IHW15N120E1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB9FA296781820&compId=IHW15N120E1.pdf?ci_sign=476c39c6f7509bba9d8e18c54ceedde48ef8c47d
IHW15N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Turn-on time: 1940ns
Gate charge: 90nC
Turn-off time: 1450ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 62.2W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
37+1.96 EUR
41+1.76 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IHW15N120R3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC54BEBB74D820&compId=IHW15N120R3.pdf?ci_sign=4a3a7bc4b67f8ad8cc77cc34fe03f8e75e2309cc
IHW15N120R3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Gate charge: 165nC
Turn-off time: 346ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 127W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
25+2.9 EUR
30+2.42 EUR
120+2.23 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120BH6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0997F3635D8BF&compId=IKW15N120BH6.pdf?ci_sign=7d5116a5ba65f8a2b5cf2e55505c6de35ec86261
IKW15N120BH6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 92nC
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.5 EUR
25+2.97 EUR
32+2.29 EUR
35+2.06 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120T2FKSA1 IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd
IKW15N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 2
Kind of package: tube
Turn-on time: 57ns
Gate charge: 93nC
Turn-off time: 457ns
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 235W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.48 EUR
14+5.25 EUR
30+4.05 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
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