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2EDN7524FXTMA1 2EDN7524FXTMA1 INFINEON TECHNOLOGIES 2EDN752x-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Kind of package: reel; tape
Output current: -5...5A
Supply voltage: 4.5...20V
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Mounting: SMD
Type of integrated circuit: driver
Voltage class: 20V
Number of channels: 2
auf Bestellung 1921 Stücke:
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59+1.22 EUR
85+0.84 EUR
90+0.80 EUR
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IRLR7833TRPBF IRLR7833TRPBF INFINEON TECHNOLOGIES irlr7833pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS462T BTS462T INFINEON TECHNOLOGIES BTS462T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 2364 Stücke:
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17+4.43 EUR
33+2.19 EUR
35+2.07 EUR
500+1.99 EUR
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IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES irf1104.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
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27+2.67 EUR
36+2.02 EUR
43+1.66 EUR
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FP75R12KT4 FP75R12KT4 INFINEON TECHNOLOGIES FP75R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Application: Inverter
Power dissipation: 385W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
auf Bestellung 7 Stücke:
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1+278.85 EUR
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IRFB4229PBF IRFB4229PBF INFINEON TECHNOLOGIES irfb4229pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 96 Stücke:
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17+4.22 EUR
30+2.42 EUR
32+2.29 EUR
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BAT1504WH6327XTSA1 BAT1504WH6327XTSA1 INFINEON TECHNOLOGIES BAT1503WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW
Case: SOT323
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: double series
Power dissipation: 0.1W
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 2527 Stücke:
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117+0.61 EUR
177+0.40 EUR
260+0.28 EUR
275+0.26 EUR
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BTS711L1 BTS711L1 INFINEON TECHNOLOGIES BTS711L1.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Supply voltage: 5...34V DC
On-state resistance: 50mΩ
Output current: 1.9...4.4A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: DSO20
auf Bestellung 404 Stücke:
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8+9.22 EUR
15+5.03 EUR
16+4.76 EUR
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IRF3007PBF IRF3007PBF INFINEON TECHNOLOGIES irf3007.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF300P226 IRF300P226 INFINEON TECHNOLOGIES IRF300P226.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 191nC
Kind of package: tube
Kind of channel: enhancement
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IRF300P227 IRF300P227 INFINEON TECHNOLOGIES IRF300P227.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3315STRLPBF IRF3315STRLPBF INFINEON TECHNOLOGIES irf3315spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3703PBF IRF3703PBF INFINEON TECHNOLOGIES irf3703pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.50 EUR
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IPD25N06S4L30ATMA2 INFINEON TECHNOLOGIES Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS123IXTSA1 BSS123IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.63nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
auf Bestellung 1668 Stücke:
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278+0.26 EUR
544+0.13 EUR
691+0.10 EUR
802+0.09 EUR
942+0.08 EUR
1539+0.05 EUR
1624+0.04 EUR
Mindestbestellmenge: 278
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BSS123NH6327XTSA1 BSS123NH6327XTSA1 INFINEON TECHNOLOGIES BSS123NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
auf Bestellung 26834 Stücke:
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295+0.24 EUR
424+0.17 EUR
491+0.15 EUR
785+0.09 EUR
1197+0.06 EUR
1266+0.06 EUR
6000+0.05 EUR
Mindestbestellmenge: 295
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IRF1324PBF IRF1324PBF INFINEON TECHNOLOGIES irf1324pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Technology: HEXFET®
Drain current: 353A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 160nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 24V
auf Bestellung 53 Stücke:
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20+3.68 EUR
35+2.07 EUR
37+1.97 EUR
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AUIRF1324STRL AUIRF1324STRL INFINEON TECHNOLOGIES AUIRF1324STRL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRF1324WL AUIRF1324WL INFINEON TECHNOLOGIES auirf1324wl.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ110N06NS3GATMA1 INFINEON TECHNOLOGIES BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 INFINEON TECHNOLOGIES BSZ110N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
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BCR133SH6327 BCR133SH6327 INFINEON TECHNOLOGIES BCR133.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT363
Frequency: 130MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
auf Bestellung 5123 Stücke:
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447+0.16 EUR
667+0.11 EUR
866+0.08 EUR
916+0.08 EUR
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IR2130SPBF IR2130SPBF INFINEON TECHNOLOGIES ir2130_2132.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO28-W
Power: 1.6W
Supply voltage: 10...20V DC
Turn-on time: 675ns
Turn-off time: 475ns
Output current: -420...200mA
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.72 EUR
9+8.22 EUR
10+7.76 EUR
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IR2133SPBF IR2133SPBF INFINEON TECHNOLOGIES IRSDS12168-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 0.6/1.2kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Power: 1.6W
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
auf Bestellung 14 Stücke:
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7+11.41 EUR
9+8.25 EUR
10+7.81 EUR
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IRFB4321PBF IRFB4321PBF INFINEON TECHNOLOGIES IRFB4321PBF-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
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18+3.98 EUR
22+3.25 EUR
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IRFB4332PbF IRFB4332PbF INFINEON TECHNOLOGIES irfb4332pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
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22+3.30 EUR
31+2.36 EUR
33+2.23 EUR
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BTS3205NHUSA1 BTS3205NHUSA1 INFINEON TECHNOLOGIES BTS3205N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 600mA; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
On-state resistance: 1.9Ω
Output voltage: 42V
Output current: 0.6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 0.78W
Technology: HITFET®
Kind of integrated circuit: low-side
Case: SOT223-4
Produkt ist nicht verfügbar
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SPA06N80C3 SPA06N80C3 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
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19+3.76 EUR
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SPP06N80C3 SPP06N80C3 INFINEON TECHNOLOGIES SPP06N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
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AIHD10N60RFATMA1 AIHD10N60RFATMA1 INFINEON TECHNOLOGIES AIHD10N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 27ns
Turn-off time: 186ns
Produkt ist nicht verfügbar
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IRF100B202 IRF100B202 INFINEON TECHNOLOGIES IRF100B202.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 33 Stücke:
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32+2.26 EUR
33+2.17 EUR
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IRS21094PBF IRS21094PBF INFINEON TECHNOLOGIES irs2109.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
auf Bestellung 106 Stücke:
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46+1.59 EUR
48+1.50 EUR
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IRS21094SPBF IRS21094SPBF INFINEON TECHNOLOGIES irs2109.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
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IRS2108PBF IRS2108PBF INFINEON TECHNOLOGIES irs2108.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108SPBF IRS2108SPBF INFINEON TECHNOLOGIES irs2108.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 89 Stücke:
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26+2.85 EUR
30+2.46 EUR
31+2.32 EUR
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IRFB3307ZPBF IRFB3307ZPBF INFINEON TECHNOLOGIES irfs3307zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Case: TO220AB
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 5.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Gate charge: 79nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 50 Stücke:
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22+3.26 EUR
37+1.96 EUR
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IRFIZ44NPBF IRFIZ44NPBF INFINEON TECHNOLOGIES irfiz44n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 43.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 249 Stücke:
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33+2.19 EUR
48+1.50 EUR
96+0.75 EUR
102+0.71 EUR
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IRFR120NTRPBF IRFR120NTRPBF INFINEON TECHNOLOGIES irfr120npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 9.1A
Produkt ist nicht verfügbar
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IRFR6215TRPBF IRFR6215TRPBF INFINEON TECHNOLOGIES irfr6215pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 439 Stücke:
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40+1.82 EUR
55+1.31 EUR
102+0.71 EUR
107+0.67 EUR
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IRFSL4410ZPBF IRFSL4410ZPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Power dissipation: 230W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 97A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BC856SH6327 BC856SH6327 INFINEON TECHNOLOGIES BC856UE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1654 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
338+0.21 EUR
516+0.14 EUR
876+0.08 EUR
926+0.08 EUR
Mindestbestellmenge: 250
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TT310N20KOF TT310N20KOF INFINEON TECHNOLOGIES TT310N20KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 310A; BG-PB60-1; Ifsm: 10kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60-1
Max. off-state voltage: 2kV
Max. forward voltage: 2.22V
Load current: 310A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 10kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+226.05 EUR
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BSS139H6327XTSA1 BSS139H6327XTSA1 INFINEON TECHNOLOGIES BSS139H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 250V
Drain current: 0.1A
On-state resistance: 30Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 7844 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
382+0.19 EUR
404+0.18 EUR
3000+0.17 EUR
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BSP170PH6327XTSA1 BSP170PH6327XTSA1 INFINEON TECHNOLOGIES BSP170PH6327XTSA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Drain-source voltage: -60V
auf Bestellung 1227 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
81+0.89 EUR
182+0.39 EUR
193+0.37 EUR
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IRS21864SPBF IRS21864SPBF INFINEON TECHNOLOGIES irs2186pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
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IGW25T120FKSA1 IGW25T120FKSA1 INFINEON TECHNOLOGIES IGW25T120-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Mounting: THT
auf Bestellung 21 Stücke:
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16+4.62 EUR
21+3.40 EUR
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IRL7833STRLPBF IRL7833STRLPBF INFINEON TECHNOLOGIES irl7833pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Case: D2PAK
Drain-source voltage: 30V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES IPA037N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Drain-source voltage: 80V
Drain current: 75A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220FP
auf Bestellung 24 Stücke:
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17+4.38 EUR
19+3.79 EUR
24+2.97 EUR
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IPD90N04S405ATMA1 IPD90N04S405ATMA1 INFINEON TECHNOLOGIES IPD90N04S405.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 5.2mΩ
Kind of package: reel
Drain current: 61A
Gate charge: 18nC
Drain-source voltage: 40V
Technology: OptiMOS™ T2
Kind of channel: enhancement
Case: PG-TO252-3-313
Gate-source voltage: ±20V
Pulsed drain current: 344A
Power dissipation: 65W
Mounting: SMD
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 IPD068P03L3GATMA1 INFINEON TECHNOLOGIES IPD068P03L3GATMA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Drain-source voltage: -30V
Mounting: SMD
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO252-3
Drain current: -70A
Produkt ist nicht verfügbar
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IPB065N15N3GATMA1 IPB065N15N3GATMA1 INFINEON TECHNOLOGIES IPB065N15N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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TLE7181EMXUMA1 TLE7181EMXUMA1 INFINEON TECHNOLOGIES TLE7181EM.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Supply voltage: 7...34V DC
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Kind of output: non-inverting
Turn-on time: 250ns
Turn-off time: 200ns
Topology: H-bridge; push-pull
Number of channels: 4
Produkt ist nicht verfügbar
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TLE7182EMXUMA1 TLE7182EMXUMA1 INFINEON TECHNOLOGIES TLE7182EM.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Supply voltage: 7...34V DC
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-on time: 250ns
Turn-off time: 200ns
Topology: H-bridge; push-pull
Number of channels: 4
Produkt ist nicht verfügbar
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IPB160N04S4LH1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: PG-TO263-7-3
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Gate-source voltage: -16...20V
Pulsed drain current: 640A
Produkt ist nicht verfügbar
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SPA07N60C3 SPA07N60C3 INFINEON TECHNOLOGIES SPA07N60C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.56 EUR
40+1.80 EUR
42+1.72 EUR
50+1.70 EUR
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SPP07N60C3 SPP07N60C3 INFINEON TECHNOLOGIES SPx07N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IRS25401PBF IRS25401PBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Mounting: THT
Kind of package: tube
Case: DIP8
Supply voltage: 8...16.6V DC
Turn-on time: 320ns
Turn-off time: 180ns
Output current: -700...500mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: high-/low-side; LED driver
Topology: buck
Voltage class: 200V
Operating temperature: -25...125°C
Power: 1W
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.66 EUR
Mindestbestellmenge: 43
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IPB025N10N3GATMA1 IPB025N10N3GATMA1 INFINEON TECHNOLOGIES IPB025N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 426 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.42 EUR
13+5.78 EUR
17+4.42 EUR
18+4.18 EUR
Mindestbestellmenge: 12
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IRG4PSH71UDPBF IRG4PSH71UDPBF INFINEON TECHNOLOGIES irg4psh71udpbf.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 197W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 305nC
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 0.5µs
Type of transistor: IGBT
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.82 EUR
20+3.75 EUR
21+3.55 EUR
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2EDN7524FXTMA1 2EDN752x-DTE.pdf
2EDN7524FXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Kind of package: reel; tape
Output current: -5...5A
Supply voltage: 4.5...20V
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Mounting: SMD
Type of integrated circuit: driver
Voltage class: 20V
Number of channels: 2
auf Bestellung 1921 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
85+0.84 EUR
90+0.80 EUR
Mindestbestellmenge: 59
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IRLR7833TRPBF irlr7833pbf.pdf
IRLR7833TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS462T BTS462T.pdf
BTS462T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 2364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.43 EUR
33+2.19 EUR
35+2.07 EUR
500+1.99 EUR
Mindestbestellmenge: 17
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IRF1104PBF irf1104.pdf
IRF1104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
36+2.02 EUR
43+1.66 EUR
Mindestbestellmenge: 27
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FP75R12KT4 FP75R12KT4.pdf
FP75R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Application: Inverter
Power dissipation: 385W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+278.85 EUR
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IRFB4229PBF irfb4229pbf.pdf
IRFB4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.22 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 17
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BAT1504WH6327XTSA1 BAT1503WE6327HTSA1.pdf
BAT1504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW
Case: SOT323
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: double series
Power dissipation: 0.1W
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 2527 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
177+0.40 EUR
260+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 117
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BTS711L1 description BTS711L1.pdf
BTS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Supply voltage: 5...34V DC
On-state resistance: 50mΩ
Output current: 1.9...4.4A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: DSO20
auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.22 EUR
15+5.03 EUR
16+4.76 EUR
Mindestbestellmenge: 8
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IRF3007PBF description irf3007.pdf
IRF3007PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF300P226 IRF300P226.pdf
IRF300P226
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 191nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF300P227 IRF300P227.pdf
IRF300P227
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3315STRLPBF irf3315spbf.pdf
IRF3315STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3703PBF irf3703pbf.pdf
IRF3703PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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IPD25N06S4L30ATMA2 Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS123IXTSA1 Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46
BSS123IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.63nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
auf Bestellung 1668 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
544+0.13 EUR
691+0.10 EUR
802+0.09 EUR
942+0.08 EUR
1539+0.05 EUR
1624+0.04 EUR
Mindestbestellmenge: 278
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BSS123NH6327XTSA1 BSS123NH6327XTSA1.pdf
BSS123NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
auf Bestellung 26834 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
424+0.17 EUR
491+0.15 EUR
785+0.09 EUR
1197+0.06 EUR
1266+0.06 EUR
6000+0.05 EUR
Mindestbestellmenge: 295
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IRF1324PBF irf1324pbf.pdf
IRF1324PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Technology: HEXFET®
Drain current: 353A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 160nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 24V
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.68 EUR
35+2.07 EUR
37+1.97 EUR
Mindestbestellmenge: 20
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AUIRF1324STRL AUIRF1324STRL.pdf
AUIRF1324STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF1324WL auirf1324wl.pdf
AUIRF1324WL
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ110N06NS3GATMA1 BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ110N08NS5ATMA1 BSZ110N08NS5-DTE.pdf
BSZ110N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR133SH6327 BCR133.pdf
BCR133SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT363
Frequency: 130MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
auf Bestellung 5123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
447+0.16 EUR
667+0.11 EUR
866+0.08 EUR
916+0.08 EUR
Mindestbestellmenge: 447
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IR2130SPBF description ir2130_2132.pdf
IR2130SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO28-W
Power: 1.6W
Supply voltage: 10...20V DC
Turn-on time: 675ns
Turn-off time: 475ns
Output current: -420...200mA
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.72 EUR
9+8.22 EUR
10+7.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IR2133SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 0.6/1.2kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Power: 1.6W
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.41 EUR
9+8.25 EUR
10+7.81 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4321PBF description IRFB4321PBF-DTE.pdf
IRFB4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
22+3.25 EUR
Mindestbestellmenge: 18
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IRFB4332PbF irfb4332pbf.pdf
IRFB4332PbF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.30 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 22
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BTS3205NHUSA1 BTS3205N.pdf
BTS3205NHUSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 600mA; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
On-state resistance: 1.9Ω
Output voltage: 42V
Output current: 0.6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 0.78W
Technology: HITFET®
Kind of integrated circuit: low-side
Case: SOT223-4
Produkt ist nicht verfügbar
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SPA06N80C3
SPA06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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SPP06N80C3 description SPP06N80C3.pdf
SPP06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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AIHD10N60RFATMA1 AIHD10N60RF.pdf
AIHD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 27ns
Turn-off time: 186ns
Produkt ist nicht verfügbar
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IRF100B202 IRF100B202.pdf
IRF100B202
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
33+2.17 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IRS21094PBF description irs2109.pdf
IRS21094PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
48+1.50 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRS21094SPBF irs2109.pdf
IRS21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108PBF irs2108.pdf
IRS2108PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108SPBF irs2108.pdf
IRS2108SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.20 EUR
26+2.85 EUR
30+2.46 EUR
31+2.32 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3307ZPBF irfs3307zpbf.pdf
IRFB3307ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Case: TO220AB
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 5.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Gate charge: 79nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.26 EUR
37+1.96 EUR
50+1.43 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRFIZ44NPBF irfiz44n.pdf
IRFIZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 43.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
48+1.50 EUR
96+0.75 EUR
102+0.71 EUR
Mindestbestellmenge: 33
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IRFR120NTRPBF description irfr120npbf.pdf
IRFR120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 9.1A
Produkt ist nicht verfügbar
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IRFR6215TRPBF irfr6215pbf.pdf
IRFR6215TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 439 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
55+1.31 EUR
102+0.71 EUR
107+0.67 EUR
Mindestbestellmenge: 40
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IRFSL4410ZPBF irfb4410zpbf.pdf
IRFSL4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Power dissipation: 230W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 97A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BC856SH6327 BC856UE6327.pdf
BC856SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1654 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
338+0.21 EUR
516+0.14 EUR
876+0.08 EUR
926+0.08 EUR
Mindestbestellmenge: 250
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TT310N20KOF TT310N20KOF.pdf
TT310N20KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 310A; BG-PB60-1; Ifsm: 10kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60-1
Max. off-state voltage: 2kV
Max. forward voltage: 2.22V
Load current: 310A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 10kA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+226.05 EUR
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BSS139H6327XTSA1 BSS139H6327XTSA1.pdf
BSS139H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 250V
Drain current: 0.1A
On-state resistance: 30Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 7844 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
382+0.19 EUR
404+0.18 EUR
3000+0.17 EUR
Mindestbestellmenge: 129
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BSP170PH6327XTSA1 BSP170PH6327XTSA1-DTE.PDF
BSP170PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Drain-source voltage: -60V
auf Bestellung 1227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
81+0.89 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 53
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IRS21864SPBF irs2186pbf.pdf
IRS21864SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
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IGW25T120FKSA1 IGW25T120-DTE.pdf
IGW25T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Mounting: THT
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.62 EUR
21+3.40 EUR
Mindestbestellmenge: 16
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IRL7833STRLPBF irl7833pbf.pdf
IRL7833STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Case: D2PAK
Drain-source voltage: 30V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IPA037N08N3GXKSA1 IPA037N08N3G-DTE.pdf
IPA037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Drain-source voltage: 80V
Drain current: 75A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220FP
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.38 EUR
19+3.79 EUR
24+2.97 EUR
Mindestbestellmenge: 17
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IPD90N04S405ATMA1 IPD90N04S405.pdf
IPD90N04S405ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 5.2mΩ
Kind of package: reel
Drain current: 61A
Gate charge: 18nC
Drain-source voltage: 40V
Technology: OptiMOS™ T2
Kind of channel: enhancement
Case: PG-TO252-3-313
Gate-source voltage: ±20V
Pulsed drain current: 344A
Power dissipation: 65W
Mounting: SMD
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 IPD068P03L3GATMA1.pdf
IPD068P03L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Drain-source voltage: -30V
Mounting: SMD
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO252-3
Drain current: -70A
Produkt ist nicht verfügbar
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IPB065N15N3GATMA1 IPB065N15N3G-DTE.pdf
IPB065N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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TLE7181EMXUMA1 TLE7181EM.pdf
TLE7181EMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Supply voltage: 7...34V DC
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Kind of output: non-inverting
Turn-on time: 250ns
Turn-off time: 200ns
Topology: H-bridge; push-pull
Number of channels: 4
Produkt ist nicht verfügbar
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TLE7182EMXUMA1 TLE7182EM.pdf
TLE7182EMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Supply voltage: 7...34V DC
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-on time: 250ns
Turn-off time: 200ns
Topology: H-bridge; push-pull
Number of channels: 4
Produkt ist nicht verfügbar
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IPB160N04S4LH1ATMA1 Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: PG-TO263-7-3
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Gate-source voltage: -16...20V
Pulsed drain current: 640A
Produkt ist nicht verfügbar
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SPA07N60C3 description SPA07N60C3.pdf
SPA07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.56 EUR
40+1.80 EUR
42+1.72 EUR
50+1.70 EUR
Mindestbestellmenge: 21
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SPP07N60C3 SPx07N60C3.pdf
SPP07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IRS25401PBF irs25401pbf.pdf
IRS25401PBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Mounting: THT
Kind of package: tube
Case: DIP8
Supply voltage: 8...16.6V DC
Turn-on time: 320ns
Turn-off time: 180ns
Output current: -700...500mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: high-/low-side; LED driver
Topology: buck
Voltage class: 200V
Operating temperature: -25...125°C
Power: 1W
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.66 EUR
Mindestbestellmenge: 43
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IPB025N10N3GATMA1 IPB025N10N3G-DTE.pdf
IPB025N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 426 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.42 EUR
13+5.78 EUR
17+4.42 EUR
18+4.18 EUR
Mindestbestellmenge: 12
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IRG4PSH71UDPBF description irg4psh71udpbf.pdf
IRG4PSH71UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 197W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 305nC
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 0.5µs
Type of transistor: IGBT
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.82 EUR
20+3.75 EUR
21+3.55 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
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