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IKW50N65H5FKSA1 IKW50N65H5FKSA1 INFINEON TECHNOLOGIES IKW50N65H5FKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
auf Bestellung 196 Stücke:
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11+7.01 EUR
18+4.09 EUR
19+3.86 EUR
60+3.72 EUR
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IKW50N65WR5XKSA1 IKW50N65WR5XKSA1 INFINEON TECHNOLOGIES IKW50N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 79ns
Turn-off time: 420ns
auf Bestellung 102 Stücke:
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11+6.99 EUR
12+6.29 EUR
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16+4.56 EUR
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IKZ50N65ES5XKSA1 IKZ50N65ES5XKSA1 INFINEON TECHNOLOGIES IKZ50N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 58ns
Turn-off time: 326ns
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IKZ50N65NH5XKSA1 IKZ50N65NH5XKSA1 INFINEON TECHNOLOGIES IKZ50N65NH5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 30ns
Turn-off time: 275ns
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BTS3410GXUMA1 BTS3410GXUMA1 INFINEON TECHNOLOGIES BTS3410G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
On-state resistance: 0.2Ω
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Power dissipation: 0.8W
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: PG-DSO-8
auf Bestellung 2491 Stücke:
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22+3.35 EUR
33+2.19 EUR
53+1.37 EUR
55+1.30 EUR
1000+1.26 EUR
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IRLR3705ZTRPBF IRLR3705ZTRPBF INFINEON TECHNOLOGIES IRLR3705ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1767 Stücke:
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43+1.67 EUR
58+1.24 EUR
61+1.17 EUR
500+1.13 EUR
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BTS3408GXUMA2 BTS3408GXUMA2 INFINEON TECHNOLOGIES BTS3408G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Operating temperature: -40...150°C
Output voltage: 60V
Output current: 0.55A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Power dissipation: 0.88W
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: PG-DSO-8
Supply voltage: 4.5...60V DC
On-state resistance: 0.48Ω
Turn-on time: 2µs
Turn-off time: 2µs
auf Bestellung 1956 Stücke:
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21+3.55 EUR
32+2.26 EUR
34+2.13 EUR
100+2.06 EUR
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IRLR2703TRPBF INFINEON TECHNOLOGIES irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 45mΩ
Gate-source voltage: ±16V
Pulsed drain current: 96A
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IRLR2705TRLPBF INFINEON TECHNOLOGIES irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 40mΩ
Gate-source voltage: ±16V
Pulsed drain current: 110A
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IRLR2705TRPBF IRLR2705TRPBF INFINEON TECHNOLOGIES irlr2705pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1724 Stücke:
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74+0.97 EUR
105+0.69 EUR
132+0.54 EUR
250+0.29 EUR
265+0.27 EUR
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IRLR3103TRPBF IRLR3103TRPBF INFINEON TECHNOLOGIES irlr3103pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLR3105TRPBF IRLR3105TRPBF INFINEON TECHNOLOGIES irlr3105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLR3110ZTRLPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
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IRLR3114ZTRPBF IRLR3114ZTRPBF INFINEON TECHNOLOGIES irlr3114zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IHW30N160R5XKSA1 IHW30N160R5XKSA1 INFINEON TECHNOLOGIES IHW30N160R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™
Turn-off time: 411ns
auf Bestellung 75 Stücke:
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13+5.78 EUR
18+4.13 EUR
19+3.90 EUR
60+3.76 EUR
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BSO207PHXUMA1 BSO207PHXUMA1 INFINEON TECHNOLOGIES BSO207PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 45mΩ
Power dissipation: 1.6W
auf Bestellung 2213 Stücke:
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97+0.74 EUR
128+0.56 EUR
141+0.51 EUR
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IR2113PBF IR2113PBF INFINEON TECHNOLOGIES ir2110_2113.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1.6W
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 118 Stücke:
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17+4.25 EUR
29+2.52 EUR
31+2.37 EUR
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IRLML9301TRPBF IRLML9301TRPBF INFINEON TECHNOLOGIES irlml9301pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2744 Stücke:
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129+0.56 EUR
205+0.35 EUR
285+0.25 EUR
329+0.22 EUR
658+0.11 EUR
695+0.10 EUR
Mindestbestellmenge: 129
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SMBT2222AE6327HTSA1 SMBT2222AE6327HTSA1 INFINEON TECHNOLOGIES SMBT2222AE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Produkt ist nicht verfügbar
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BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 INFINEON TECHNOLOGIES BSC040N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES BSZ440N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 5899 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
68+1.05 EUR
102+0.71 EUR
107+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 39
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IAUZ40N10S5L120ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUZ40N10S5N130ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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PVT412LSPBF PVT412LSPBF INFINEON TECHNOLOGIES pvt412.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 35Ω
Contacts configuration: SPST-NO
Max. operating current: 200mA
Mounting: SMT
Relay variant: MOSFET
Control current: 3...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
13+5.51 EUR
14+5.21 EUR
100+5.00 EUR
Mindestbestellmenge: 10
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IDWD40G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 290A
Power dissipation: 402W
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IRF7424TRPBF IRF7424TRPBF INFINEON TECHNOLOGIES irf7424pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2132SPBF IR2132SPBF INFINEON TECHNOLOGIES IR2132JPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Power: 1.6W
Supply voltage: 10...20V DC
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.81 EUR
12+6.03 EUR
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IPB64N25S320ATMA1 INFINEON TECHNOLOGIES Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Pulsed drain current: 256A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFR5505TRPBF IRFR5505TRPBF INFINEON TECHNOLOGIES irfr5505.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3886 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
67+1.08 EUR
175+0.41 EUR
186+0.39 EUR
Mindestbestellmenge: 48
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IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES irlr9343pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IR2136SPBF IR2136SPBF INFINEON TECHNOLOGIES IR2136STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Power: 1.6W
Supply voltage: 10...20V DC
Turn-on time: 0.4µs
Turn-off time: 380ns
auf Bestellung 12 Stücke:
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7+11.47 EUR
10+7.48 EUR
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IR2136STRPBF IR2136STRPBF INFINEON TECHNOLOGIES IR2136STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
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2N7002H6327XTSA2 2N7002H6327XTSA2 INFINEON TECHNOLOGIES 2N7002H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 9524 Stücke:
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374+0.19 EUR
562+0.13 EUR
719+0.10 EUR
851+0.08 EUR
1007+0.07 EUR
1337+0.05 EUR
1413+0.05 EUR
Mindestbestellmenge: 374
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AUIRGP35B60PD AUIRGP35B60PD INFINEON TECHNOLOGIES AUIRGP35B60PD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
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IRF1405PBF IRF1405PBF INFINEON TECHNOLOGIES irf1405.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 930 Stücke:
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24+3.06 EUR
46+1.56 EUR
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67+1.07 EUR
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IRF1405STRLPBF IRF1405STRLPBF INFINEON TECHNOLOGIES irf1405spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF1405ZPBF IRF1405ZPBF INFINEON TECHNOLOGIES irf1405zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 289 Stücke:
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26+2.85 EUR
60+1.20 EUR
64+1.13 EUR
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IRS44273LTRPBF IRS44273LTRPBF INFINEON TECHNOLOGIES IRS44273LTRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Number of channels: 1
Topology: single transistor
Power: 0.25W
Supply voltage: 9.2...20V DC
Turn-on time: 50ns
Turn-off time: 50ns
auf Bestellung 2208 Stücke:
Lieferzeit 14-21 Tag (e)
72+1.00 EUR
80+0.90 EUR
104+0.69 EUR
110+0.65 EUR
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IRS21814SPBF IRS21814SPBF INFINEON TECHNOLOGIES irs2181.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
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IRS21064PBF IRS21064PBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 51 Stücke:
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15+5.05 EUR
16+4.48 EUR
18+4.09 EUR
19+3.88 EUR
25+3.72 EUR
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IRS21064SPBF IRS21064SPBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
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IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
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IRF7456TRPBF IRF7456TRPBF INFINEON TECHNOLOGIES irf7456pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Case: SO8
Drain-source voltage: 20V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IRFB4115PBF IRFB4115PBF INFINEON TECHNOLOGIES IRFB4115.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 745 Stücke:
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16+4.65 EUR
26+2.79 EUR
28+2.63 EUR
100+2.55 EUR
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BCV47E6327 BCV47E6327 INFINEON TECHNOLOGIES BCV27E6327.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 0.36W
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 170MHz
Collector-emitter voltage: 60V
Collector current: 0.5A
Type of transistor: NPN
auf Bestellung 9720 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
350+0.20 EUR
540+0.13 EUR
937+0.08 EUR
993+0.07 EUR
9000+0.07 EUR
Mindestbestellmenge: 264
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SPW47N60C3 SPW47N60C3 INFINEON TECHNOLOGIES SPW47N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.33 EUR
6+12.51 EUR
Mindestbestellmenge: 4
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SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 INFINEON TECHNOLOGIES SPW47N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
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TLE7259-3GE TLE7259-3GE INFINEON TECHNOLOGIES TLE7259-3.pdf Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...27V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 5mA
auf Bestellung 2473 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
58+1.24 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 53
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IRFR024NTRPBF IRFR024NTRPBF INFINEON TECHNOLOGIES irfr024npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 9765 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
96+0.75 EUR
131+0.55 EUR
138+0.52 EUR
250+0.50 EUR
Mindestbestellmenge: 76
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AUIRFR024N AUIRFR024N INFINEON TECHNOLOGIES auirfr024n.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
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IR2118SPBF IR2118SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 75 Stücke:
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40+1.82 EUR
52+1.39 EUR
55+1.32 EUR
Mindestbestellmenge: 40
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IRF1018ESTRLPBF IRF1018ESTRLPBF INFINEON TECHNOLOGIES irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 194 Stücke:
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36+2.03 EUR
49+1.48 EUR
83+0.86 EUR
88+0.82 EUR
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IR2301SPBF IR2301SPBF INFINEON TECHNOLOGIES IR2301-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
auf Bestellung 169 Stücke:
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40+1.82 EUR
44+1.64 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 40
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IR2304SPBF IR2304SPBF INFINEON TECHNOLOGIES ir2304.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 0.22µs
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -130...60mA
Power: 625mW
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.46 EUR
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IR2308SPBF IR2308SPBF INFINEON TECHNOLOGIES ir2308.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Power: 625mW
Produkt ist nicht verfügbar
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IRF8010PBF IRF8010PBF INFINEON TECHNOLOGIES irf8010.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 81nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
49+1.49 EUR
72+1.00 EUR
76+0.94 EUR
Mindestbestellmenge: 35
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IRF8010STRLPBF IRF8010STRLPBF INFINEON TECHNOLOGIES irf8010spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF8313TRPBF IRF8313TRPBF INFINEON TECHNOLOGIES irf8313pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.7A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.7A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF8707TRPBF IRF8707TRPBF INFINEON TECHNOLOGIES irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB019N08N3G
+1
 		IPB019N08N3G INFINEON TECHNOLOGIES IPB019N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IKW50N65H5FKSA1 IKW50N65H5FKSA1-DTE.pdf
IKW50N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.01 EUR
18+4.09 EUR
19+3.86 EUR
60+3.72 EUR
Mindestbestellmenge: 11
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IKW50N65WR5XKSA1 IKW50N65WR5.pdf
IKW50N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 79ns
Turn-off time: 420ns
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.99 EUR
12+6.29 EUR
15+4.82 EUR
16+4.56 EUR
Mindestbestellmenge: 11
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IKZ50N65ES5XKSA1 IKZ50N65ES5.pdf
IKZ50N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 58ns
Turn-off time: 326ns
Produkt ist nicht verfügbar
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IKZ50N65NH5XKSA1 IKZ50N65NH5.pdf
IKZ50N65NH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 30ns
Turn-off time: 275ns
Produkt ist nicht verfügbar
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BTS3410GXUMA1 BTS3410G.pdf
BTS3410GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
On-state resistance: 0.2Ω
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Power dissipation: 0.8W
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: PG-DSO-8
auf Bestellung 2491 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
33+2.19 EUR
53+1.37 EUR
55+1.30 EUR
1000+1.26 EUR
Mindestbestellmenge: 22
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IRLR3705ZTRPBF IRLR3705ZTRPBF.pdf
IRLR3705ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1767 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
43+1.67 EUR
58+1.24 EUR
61+1.17 EUR
500+1.13 EUR
Mindestbestellmenge: 37
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BTS3408GXUMA2 BTS3408G.pdf
BTS3408GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Operating temperature: -40...150°C
Output voltage: 60V
Output current: 0.55A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Power dissipation: 0.88W
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: PG-DSO-8
Supply voltage: 4.5...60V DC
On-state resistance: 0.48Ω
Turn-on time: 2µs
Turn-off time: 2µs
auf Bestellung 1956 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
32+2.26 EUR
34+2.13 EUR
100+2.06 EUR
Mindestbestellmenge: 21
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IRLR2703TRPBF irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 45mΩ
Gate-source voltage: ±16V
Pulsed drain current: 96A
Produkt ist nicht verfügbar
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IRLR2705TRLPBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 40mΩ
Gate-source voltage: ±16V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2705TRPBF irlr2705pbf.pdf
IRLR2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1724 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
105+0.69 EUR
132+0.54 EUR
250+0.29 EUR
265+0.27 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3103TRPBF irlr3103pbf.pdf
IRLR3103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3105TRPBF irlr3105pbf.pdf
IRLR3105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Pulsed drain current: 250A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3114ZTRPBF irlr3114zpbf.pdf
IRLR3114ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N160R5XKSA1 IHW30N160R5.pdf
IHW30N160R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™
Turn-off time: 411ns
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.78 EUR
18+4.13 EUR
19+3.90 EUR
60+3.76 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BSO207PHXUMA1 BSO207PHXUMA1-dte.pdf
BSO207PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 45mΩ
Power dissipation: 1.6W
auf Bestellung 2213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
128+0.56 EUR
141+0.51 EUR
Mindestbestellmenge: 97
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IR2113PBF description ir2110_2113.pdf
IR2113PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1.6W
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.25 EUR
29+2.52 EUR
31+2.37 EUR
Mindestbestellmenge: 17
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IRLML9301TRPBF irlml9301pbf.pdf
IRLML9301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2744 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
205+0.35 EUR
285+0.25 EUR
329+0.22 EUR
658+0.11 EUR
695+0.10 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
SMBT2222AE6327HTSA1 SMBT2222AE6327.pdf
SMBT2222AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5ATMA1 BSC040N10NS5-DTE.pdf
BSC040N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 BSZ440N10NS3G-DTE.pdf
BSZ440N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 5899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
68+1.05 EUR
102+0.71 EUR
107+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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PVT412LSPBF pvt412.pdf
PVT412LSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 35Ω
Contacts configuration: SPST-NO
Max. operating current: 200mA
Mounting: SMT
Relay variant: MOSFET
Control current: 3...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
13+5.51 EUR
14+5.21 EUR
100+5.00 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IDWD40G120C5XKSA1 Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
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IRF7424TRPBF irf7424pbf.pdf
IRF7424TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2132SPBF description IR2132JPBF.pdf
IR2132SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Power: 1.6W
Supply voltage: 10...20V DC
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.81 EUR
12+6.03 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPB64N25S320ATMA1 Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Pulsed drain current: 256A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR5505TRPBF description irfr5505.pdf
IRFR5505TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3886 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
67+1.08 EUR
175+0.41 EUR
186+0.39 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRLR9343TRPBF irlr9343pbf.pdf
IRLR9343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IR2136SPBF IR2136STRPBF.pdf
IR2136SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Power: 1.6W
Supply voltage: 10...20V DC
Turn-on time: 0.4µs
Turn-off time: 380ns
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.47 EUR
10+7.48 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IR2136STRPBF IR2136STRPBF.pdf
IR2136STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Produkt ist nicht verfügbar
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2N7002H6327XTSA2 2N7002H6327XTSA2.pdf
2N7002H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 9524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
374+0.19 EUR
562+0.13 EUR
719+0.10 EUR
851+0.08 EUR
1007+0.07 EUR
1337+0.05 EUR
1413+0.05 EUR
Mindestbestellmenge: 374
Im Einkaufswagen  Stück im Wert von  UAH
AUIRGP35B60PD AUIRGP35B60PD.pdf
AUIRGP35B60PD
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1405PBF irf1405.pdf
IRF1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 930 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
46+1.56 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF1405STRLPBF irf1405spbf.pdf
IRF1405STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1405ZPBF irf1405zpbf.pdf
IRF1405ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
60+1.20 EUR
64+1.13 EUR
Mindestbestellmenge: 26
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IRS44273LTRPBF IRS44273LTRPBF.pdf
IRS44273LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Number of channels: 1
Topology: single transistor
Power: 0.25W
Supply voltage: 9.2...20V DC
Turn-on time: 50ns
Turn-off time: 50ns
auf Bestellung 2208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1.00 EUR
80+0.90 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 72
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IRS21814SPBF description irs2181.pdf
IRS21814SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Produkt ist nicht verfügbar
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IRS21064PBF irs2106.pdf
IRS21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.05 EUR
16+4.48 EUR
18+4.09 EUR
19+3.88 EUR
25+3.72 EUR
Mindestbestellmenge: 15
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IRS21064SPBF irs2106.pdf
IRS21064SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2106SPBF irs2106.pdf
IRS2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRF7456TRPBF irf7456pbf.pdf
IRF7456TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Case: SO8
Drain-source voltage: 20V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4115PBF IRFB4115.pdf
IRFB4115PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.65 EUR
26+2.79 EUR
28+2.63 EUR
100+2.55 EUR
Mindestbestellmenge: 16
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BCV47E6327 BCV27E6327.pdf
BCV47E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 0.36W
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 170MHz
Collector-emitter voltage: 60V
Collector current: 0.5A
Type of transistor: NPN
auf Bestellung 9720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
350+0.20 EUR
540+0.13 EUR
937+0.08 EUR
993+0.07 EUR
9000+0.07 EUR
Mindestbestellmenge: 264
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SPW47N60C3 SPW47N60C3.pdf
SPW47N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.33 EUR
6+12.51 EUR
Mindestbestellmenge: 4
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SPW47N60CFDFKSA1 SPW47N60CFD.pdf
SPW47N60CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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TLE7259-3GE TLE7259-3.pdf
TLE7259-3GE
Hersteller: INFINEON TECHNOLOGIES
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...27V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 5mA
auf Bestellung 2473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
58+1.24 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 53
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IRFR024NTRPBF description irfr024npbf.pdf
IRFR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 9765 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
96+0.75 EUR
131+0.55 EUR
138+0.52 EUR
250+0.50 EUR
Mindestbestellmenge: 76
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AUIRFR024N auirfr024n.pdf
AUIRFR024N
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2118SPBF description ir2117.pdf
IR2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
52+1.39 EUR
55+1.32 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRF1018ESTRLPBF irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891
IRF1018ESTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
49+1.48 EUR
83+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 36
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IR2301SPBF IR2301-DTE.pdf
IR2301SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
44+1.64 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IR2304SPBF ir2304.pdf
IR2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 0.22µs
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -130...60mA
Power: 625mW
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.46 EUR
Mindestbestellmenge: 29
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IR2308SPBF ir2308.pdf
IR2308SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Power: 625mW
Produkt ist nicht verfügbar
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IRF8010PBF description irf8010.pdf
IRF8010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 81nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
49+1.49 EUR
72+1.00 EUR
76+0.94 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF8010STRLPBF irf8010spbf.pdf
IRF8010STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF8313TRPBF irf8313pbf.pdf
IRF8313TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.7A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.7A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF8707TRPBF irf8707pbf.pdf?fileId=5546d462533600a40153560d57f81d6b
IRF8707TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB019N08N3G IPB019N08N3G-DTE.pdf
IPB019N08N3G
+1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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