Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149719) > Seite 2447 nach 2496

Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2442 2443 2444 2445 2446 2447 2448 2449 2450 2451 2452 2490 2496  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IGW50N60H3FKSA1 IGW50N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69DD2658122D64FA8&compId=IGW50N60H3-DTE.pdf?ci_sign=897e7d7b1107c9d184468cce9d50b26eda5e5dbb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.4 EUR
26+2.77 EUR
30+2.47 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37718FAED8FA8&compId=IGW50N60T-DTE.pdf?ci_sign=8e9d2e131bdbda93bfe3ca4fb8f78e7815e61628 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.95 EUR
19+3.85 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5CCBF5761D3D7&compId=IKW50N60DTP.pdf?ci_sign=94fc3287d74be6840256ba5010a252d8c5963f49 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.07 EUR
26+2.77 EUR
30+2.45 EUR
120+2.2 EUR
240+2.06 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0CEE5938C0745&compId=IKW50N60H3.pdf?ci_sign=d334792eef4676a4984a2ca8adefbaef89e3863e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.41 EUR
16+4.76 EUR
30+4.3 EUR
120+3.86 EUR
240+3.6 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B597008ABEE131BF&compId=IKW50N60T-dte.pdf?ci_sign=4bece27f1d2991d109d3770530589bb18075b091 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.95 EUR
12+6.12 EUR
30+5.52 EUR
120+4.96 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA9B2D8CF93820&compId=AIKW50N60CT.pdf?ci_sign=b92086039af5d2b2a4bca0bef06f9bcd896bfdc7 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE1A560ED2F820&compId=IKFW50N60ET.pdf?ci_sign=1dc63477d7ea1d12e4dda3141dab1803566a6fe8 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S409ATMA2 INFINEON TECHNOLOGIES INFNS13307-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L08ATMA2 INFINEON TECHNOLOGIES INFNS14103-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L12ATMA2 IPD50N06S4L12ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA46AFD6105A143&compId=IPD50N06S4L12.pdf?ci_sign=c6c9560e346518f86140ea30fd599c19ca15cdc8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 1955 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
82+0.88 EUR
91+0.79 EUR
100+0.74 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06LGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC2F9789B411C&compId=IPD350N06LG-DTE.pdf?ci_sign=87fae814c5bc9e76dd51c3647c62fa14ffec9864 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 2347 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
81+0.89 EUR
123+0.58 EUR
500+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IRF7313TRPBF IRF7313TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219D76070127F1A303005056AB0C4F&compId=irf7313pbf.pdf?ci_sign=e7bd49b91212a50639a11cd438aa89f6c9fcf565 description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3819 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
93+0.78 EUR
138+0.52 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.33 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7341QTR AUIRF7341QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D743AF1A6F5005056AB5A8F&compId=auirf7341q.pdf?ci_sign=6bea7d23124b569e130ea828412fdc252f1025d0 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Gate-source voltage: ±20V
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PWH6327XTSA1 BSS84PWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928F8980DED1CC&compId=BSS84PWH6327XTSA1-dte.pdf?ci_sign=2d44725811f51a5fc8637fd959b8cb9ee3677c90 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 0.37nC
auf Bestellung 5312 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
725+0.099 EUR
977+0.073 EUR
1092+0.065 EUR
1370+0.052 EUR
1484+0.048 EUR
3000+0.043 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4AFA32A35D1CC&compId=IKW25N120H3-DTE.pdf?ci_sign=a514e131da34fbe6b92466a983691a3367199936 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.21 EUR
13+5.92 EUR
14+5.13 EUR
16+4.66 EUR
20+4 EUR
30+3.99 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NPBF IRFZ44NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF9C48B972F760D4&compId=IRFZ44Npbf.pdf?ci_sign=a0367694f4d7ca96e6cad6a8227012049aa7c754 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 42nC
On-state resistance: 17.5mΩ
auf Bestellung 989 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
83+0.87 EUR
95+0.75 EUR
106+0.68 EUR
117+0.61 EUR
250+0.54 EUR
500+0.48 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NSTRLPBF IRFZ44NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221CA9332C586F1A303005056AB0C4F&compId=irfz44nspbf.pdf?ci_sign=3fb2237c544e3a8e905dcabfe68cc494319ca22b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW60N60H3FKSA1 IGW60N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37B44CF164FA8&compId=IGW60N60H3-DTE.pdf?ci_sign=fb021fd10fc060d67c3fe8c683c021df2d088a5e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.44 EUR
12+6.12 EUR
30+5.72 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW60N60H3FKSA1 IKW60N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2CB8CEA107820&compId=IKW60N60H3.pdf?ci_sign=0a1ce94180d85bd783cd0fa622d1eaeca2db3871 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60DH3EXKSA1 IKFW60N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9F00A97F393D1&compId=IKFW60N60DH3E.pdf?ci_sign=66fa90d9f11cedce9cdc0e769fa76651b50686b7 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP9140NPBF IRFP9140NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C0AEF1A6F5005056AB5A8F&compId=irfp9140n.pdf?ci_sign=3ac34c20dff7ec6e6196f54516d588001a1d186d Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
41+1.77 EUR
63+1.14 EUR
66+1.09 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NPBF IRF640NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E47020E91F1A6F5005056AB5A8F&compId=irf640n.pdf?ci_sign=a9c4739e332ce1226d87e9114bce505a5c92ddab Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 44.7nC
Kind of package: tube
auf Bestellung 738 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.26 EUR
76+0.95 EUR
95+0.76 EUR
113+0.64 EUR
130+0.55 EUR
250+0.48 EUR
500+0.45 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NSTRLPBF IRF640NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F67C6956B2FF1A303005056AB0C4F&compId=irf640npbf.pdf?ci_sign=c65d3861a70faebe14223419d628e69e4794476e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1427 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
65+1.11 EUR
81+0.89 EUR
100+0.81 EUR
250+0.72 EUR
800+0.61 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRL540NPBF IRL540NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E895D7E0CF1A6F5005056AB5A8F&compId=irl540n.pdf?ci_sign=fffe8e2f0bd2c3ceeafab0607703bfe148937036 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Gate charge: 49.3nC
On-state resistance: 44mΩ
Power dissipation: 140W
Gate-source voltage: ±16V
Kind of package: tube
Technology: HEXFET®
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 533 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
69+1.04 EUR
78+0.92 EUR
85+0.85 EUR
100+0.78 EUR
250+0.69 EUR
500+0.63 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4668PBF IRFP4668PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C092F1A6F5005056AB5A8F&compId=irfp4668pbf.pdf?ci_sign=45a153989e46de31f118c0c4d47723eb943f959c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 9.7mΩ
Gate-source voltage: ±30V
Gate charge: 161nC
Technology: HEXFET®
Power dissipation: 520W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP24N60C3 SPP24N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C338FC109074A&compId=SPP24N60C3.pdf?ci_sign=9b76c37c48399245f85e35d54b51d528dfd0f521 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP373NH6327XTSA1 BSP373NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698AF53C194611C&compId=BSP373NH6327-DTE.pdf?ci_sign=1be32fe62dee5c6145f94a436eb224a821e0b90f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
104+0.69 EUR
115+0.63 EUR
124+0.58 EUR
250+0.55 EUR
500+0.5 EUR
1000+0.48 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710LPBF IRF3710LPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710PBF IRF3710PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7A9BF1A6F5005056AB5A8F&compId=irf3710.pdf?ci_sign=58420826307cbd2f57fbdcc4bdcc928b163a71e8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 86.7nC
Kind of package: tube
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
50+1.46 EUR
61+1.18 EUR
100+1.06 EUR
250+0.93 EUR
500+0.83 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRLPBF IRF3710STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 556 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
46+1.56 EUR
55+1.31 EUR
100+1.21 EUR
250+1.08 EUR
500+0.98 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRRPBF IRF3710STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZPBF IRF3710ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7AA9F1A6F5005056AB5A8F&compId=irf3710z.pdf?ci_sign=f9d6d4f1059e7eaeb12e5a0e9cd515b090f6184f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 82nC
Kind of package: tube
auf Bestellung 535 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.1 EUR
48+1.52 EUR
61+1.18 EUR
66+1.09 EUR
74+0.98 EUR
100+0.9 EUR
200+0.83 EUR
500+0.77 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZSTRLPBF IRF3710ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F625028A726F1A303005056AB0C4F&compId=irf3710zpbf.pdf?ci_sign=70754467c74fb0376ae6b25e3bd2dab2f3f80757 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF3710ZSTRL AUIRF3710ZSTRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D5208F1A6F5005056AB5A8F&compId=auirf3710z.pdf?ci_sign=6c2c0c9f256e5a525498972404a7f2a1a6ec5bed Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP250MPBF IRFP250MPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAEBDC8FAB880E0C7&compId=irfp250mpbf.pdf?ci_sign=ce2f9fec1af75e4313268991e3189becda06ef59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 123nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
24+3 EUR
36+2 EUR
44+1.64 EUR
50+1.44 EUR
100+1.3 EUR
125+1.26 EUR
250+1.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFP250NPBF IRFP250NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAB8F1A6F5005056AB5A8F&compId=irfp250n.pdf?ci_sign=efbdd605b5da163688cfe68402cea5bf7e3f98b6 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 123nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.29 EUR
30+2.39 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRFP260MPBF IRFP260MPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BEC03C8E98F1A303005056AB0C4F&compId=irfp260mpbf.pdf?ci_sign=4f4a731c521cae55b4f5ea375c88274ca42c4872 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.63 EUR
27+2.66 EUR
33+2.22 EUR
40+1.82 EUR
50+1.63 EUR
100+1.52 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFP260NPBF IRFP260NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACABFF1A6F5005056AB5A8F&compId=irfp260n.pdf?ci_sign=f3e8a7b27a58ae203b2eeadd5c846979cd6cf1ff Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 638 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.98 EUR
25+2.89 EUR
27+2.67 EUR
50+2.53 EUR
100+2.37 EUR
125+2.35 EUR
250+2.19 EUR
400+2.1 EUR
500+2.04 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRFP2907PBF IRFP2907PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACACDF1A6F5005056AB5A8F&compId=irfp2907.pdf?ci_sign=4baf6082075992952a372b584b3f66e1a7437e61 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.26 EUR
25+2.95 EUR
100+2.77 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRF1407PBF IRF1407PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBABB04EA951DD00C7&compId=irf1407pbf.pdf?ci_sign=d745832aa8dbbd733b93dbfdb32259059f0f1a39 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
51+1.42 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRF1407STRLPBF INFINEON TECHNOLOGIES infineon-irf1407spbf-ds-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP08N65H5XKSA1 IKP08N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A5F4C2AA11CC&compId=IKP08N65H5-DTE.pdf?ci_sign=10d18d1a8c7b016c4dba2298e11ded404d5503e4 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Pulsed collector current: 24A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Collector current: 18A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPA08N80C3 SPA08N80C3 INFINEON TECHNOLOGIES INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Technology: CoolMOS™
Case: PG-TO220-3-FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 8A
Gate-source voltage: ±20V
Power dissipation: 40W
Drain-source voltage: 800V
Kind of package: tube
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.76 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SPP08N80C3 SPP08N80C3 INFINEON TECHNOLOGIES Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.37 EUR
25+2.96 EUR
28+2.56 EUR
30+2.43 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IKA10N65ET6XKSA2 IKA10N65ET6XKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE895EFAAFFDA7933D6&compId=IKA10N65ET6.pdf?ci_sign=357318a9289c8383d9971a53bdf9a9a379462c13 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 27nC
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Manufacturer series: T6
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
43+1.69 EUR
50+1.62 EUR
100+1.46 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N65S5ATMA1 IGB15N65S5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6450028E1820&compId=IGB15N65S5.pdf?ci_sign=dd7b19603f2615207670bc20e8bbe5e272f470ce Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Turn-off time: 147ns
Turn-on time: 26ns
Collector current: 23A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4741CB2AD820&compId=IKB15N65EH5.pdf?ci_sign=f41aca0c31e21ad8910ab653a5cd8be8dccade59 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Turn-off time: 172ns
Turn-on time: 33ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 IKP15N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA57DFD7A71BF&compId=IKP15N65H5-DTE.pdf?ci_sign=a152a4dcb39347c0c777a80d3988833d2f0dbb62 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 105W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.72 EUR
29+2.53 EUR
38+1.93 EUR
43+1.69 EUR
51+1.42 EUR
100+1.27 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
SPW20N60C3 SPW20N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C16093F72474A&compId=SPW20N60C3.pdf?ci_sign=afd7f24a2b3398c2d40ac67fa04a496e8428135d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.09 EUR
26+2.77 EUR
29+2.47 EUR
32+2.29 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
SPP20N60C3 SPP20N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C058D08A5F9CF1A6F5005056AB5A8F&compId=spp20n60c3.pdf?ci_sign=e6782b5ab7a5620fbda75de79daa9ea3abc07fdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.37 EUR
26+2.79 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BSS169H6327XTSA1 BSS169H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77F99D575011C&compId=BSS169H6327XTSA1.pdf?ci_sign=a9bbcd26f3e9a35aa02625482f4f09ca1954ddc4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 2080 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
197+0.36 EUR
260+0.28 EUR
295+0.24 EUR
350+0.2 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
BC850CWH6327 BC850CWH6327 INFINEON TECHNOLOGIES Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4013 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
582+0.12 EUR
882+0.081 EUR
1036+0.069 EUR
1378+0.052 EUR
1458+0.049 EUR
3000+0.047 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BFP450H6327 BFP450H6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DDA96116A11C&compId=BFP450H6327-dte.pdf?ci_sign=869aabd374218b38f27d0b850e6b9558fedfe383 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Kind of package: reel; tape
Kind of transistor: RF
Technology: SIEGET™
Collector current: 0.17A
Power dissipation: 0.5W
Collector-emitter voltage: 4.5V
Frequency: 24GHz
Polarisation: bipolar
Case: SOT343
Mounting: SMD
auf Bestellung 1223 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
128+0.56 EUR
172+0.42 EUR
250+0.38 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
IR2113SPBF IR2113SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC18200CC175EA&compId=IR2113SPBF.pdf?ci_sign=445f264982eff687f2c3ea74a5c723ef83eaa518 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 111ns
Turn-on time: 145ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Case: SO16-W
Output current: -2...2A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.7 EUR
17+4.28 EUR
20+3.65 EUR
25+3.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR2113STRPBF IR2113STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DE9CE83C8194469&compId=IR2113STRPBF.pdf?ci_sign=f472be02cbac0b51bd26e1eb6c28c6572262f783 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Kind of package: reel; tape
Operating temperature: -40...125°C
Turn-off time: 111ns
Turn-on time: 145ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Case: SO16-W
Output current: -2...2A
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
28+2.59 EUR
30+2.45 EUR
32+2.25 EUR
50+2.1 EUR
100+1.99 EUR
125+1.96 EUR
250+1.87 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
BCV61CE6327 BCV61CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04721884404F1A6F5005056AB5A8F&compId=bcv61.pdf?ci_sign=4d6a08eff3d6704cd395cd2fded12cf9d04fe558 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Case: SOT143
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 30V
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 1351 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
260+0.28 EUR
379+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IRF5305PBF IRF5305PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B35F1A6F5005056AB5A8F&compId=irf5305.pdf?ci_sign=656642a39f5b3170605577600e1ea658be004530 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3379 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
64+1.13 EUR
74+0.97 EUR
84+0.85 EUR
100+0.76 EUR
200+0.68 EUR
250+0.66 EUR
500+0.61 EUR
1000+0.58 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE69DD2658122D64FA8&compId=IGW50N60H3-DTE.pdf?ci_sign=897e7d7b1107c9d184468cce9d50b26eda5e5dbb
IGW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
26+2.77 EUR
30+2.47 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37718FAED8FA8&compId=IGW50N60T-DTE.pdf?ci_sign=8e9d2e131bdbda93bfe3ca4fb8f78e7815e61628
IGW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.95 EUR
19+3.85 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5CCBF5761D3D7&compId=IKW50N60DTP.pdf?ci_sign=94fc3287d74be6840256ba5010a252d8c5963f49
IKW50N60DTPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
26+2.77 EUR
30+2.45 EUR
120+2.2 EUR
240+2.06 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0CEE5938C0745&compId=IKW50N60H3.pdf?ci_sign=d334792eef4676a4984a2ca8adefbaef89e3863e
IKW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.41 EUR
16+4.76 EUR
30+4.3 EUR
120+3.86 EUR
240+3.6 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B597008ABEE131BF&compId=IKW50N60T-dte.pdf?ci_sign=4bece27f1d2991d109d3770530589bb18075b091
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.95 EUR
12+6.12 EUR
30+5.52 EUR
120+4.96 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA9B2D8CF93820&compId=AIKW50N60CT.pdf?ci_sign=b92086039af5d2b2a4bca0bef06f9bcd896bfdc7
AIKW50N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5
IKFW50N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE1A560ED2F820&compId=IKFW50N60ET.pdf?ci_sign=1dc63477d7ea1d12e4dda3141dab1803566a6fe8
IKFW50N60ETXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S409ATMA2 INFNS13307-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L08ATMA2 INFNS14103-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L12ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA46AFD6105A143&compId=IPD50N06S4L12.pdf?ci_sign=c6c9560e346518f86140ea30fd599c19ca15cdc8
IPD50N06S4L12ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 1955 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
82+0.88 EUR
91+0.79 EUR
100+0.74 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC2F9789B411C&compId=IPD350N06LG-DTE.pdf?ci_sign=87fae814c5bc9e76dd51c3647c62fa14ffec9864
IPD350N06LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 2347 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
81+0.89 EUR
123+0.58 EUR
500+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IRF7313TRPBF description pVersion=0046&contRep=ZT&docId=E2219D76070127F1A303005056AB0C4F&compId=irf7313pbf.pdf?ci_sign=e7bd49b91212a50639a11cd438aa89f6c9fcf565
IRF7313TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
93+0.78 EUR
138+0.52 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.33 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7341QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D743AF1A6F5005056AB5A8F&compId=auirf7341q.pdf?ci_sign=6bea7d23124b569e130ea828412fdc252f1025d0
AUIRF7341QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Gate-source voltage: ±20V
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928F8980DED1CC&compId=BSS84PWH6327XTSA1-dte.pdf?ci_sign=2d44725811f51a5fc8637fd959b8cb9ee3677c90
BSS84PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 0.37nC
auf Bestellung 5312 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
725+0.099 EUR
977+0.073 EUR
1092+0.065 EUR
1370+0.052 EUR
1484+0.048 EUR
3000+0.043 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4AFA32A35D1CC&compId=IKW25N120H3-DTE.pdf?ci_sign=a514e131da34fbe6b92466a983691a3367199936
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.21 EUR
13+5.92 EUR
14+5.13 EUR
16+4.66 EUR
20+4 EUR
30+3.99 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NPBF pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF9C48B972F760D4&compId=IRFZ44Npbf.pdf?ci_sign=a0367694f4d7ca96e6cad6a8227012049aa7c754
IRFZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 42nC
On-state resistance: 17.5mΩ
auf Bestellung 989 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
83+0.87 EUR
95+0.75 EUR
106+0.68 EUR
117+0.61 EUR
250+0.54 EUR
500+0.48 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NSTRLPBF pVersion=0046&contRep=ZT&docId=E221CA9332C586F1A303005056AB0C4F&compId=irfz44nspbf.pdf?ci_sign=3fb2237c544e3a8e905dcabfe68cc494319ca22b
IRFZ44NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW60N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37B44CF164FA8&compId=IGW60N60H3-DTE.pdf?ci_sign=fb021fd10fc060d67c3fe8c683c021df2d088a5e
IGW60N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.44 EUR
12+6.12 EUR
30+5.72 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW60N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2CB8CEA107820&compId=IKW60N60H3.pdf?ci_sign=0a1ce94180d85bd783cd0fa622d1eaeca2db3871
IKW60N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9F00A97F393D1&compId=IKFW60N60DH3E.pdf?ci_sign=66fa90d9f11cedce9cdc0e769fa76651b50686b7
IKFW60N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60EH3XKSA1 Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP9140NPBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C0AEF1A6F5005056AB5A8F&compId=irfp9140n.pdf?ci_sign=3ac34c20dff7ec6e6196f54516d588001a1d186d
IRFP9140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
41+1.77 EUR
63+1.14 EUR
66+1.09 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NPBF pVersion=0046&contRep=ZT&docId=E1C04E47020E91F1A6F5005056AB5A8F&compId=irf640n.pdf?ci_sign=a9c4739e332ce1226d87e9114bce505a5c92ddab
IRF640NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 44.7nC
Kind of package: tube
auf Bestellung 738 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
76+0.95 EUR
95+0.76 EUR
113+0.64 EUR
130+0.55 EUR
250+0.48 EUR
500+0.45 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NSTRLPBF pVersion=0046&contRep=ZT&docId=E21F67C6956B2FF1A303005056AB0C4F&compId=irf640npbf.pdf?ci_sign=c65d3861a70faebe14223419d628e69e4794476e
IRF640NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
65+1.11 EUR
81+0.89 EUR
100+0.81 EUR
250+0.72 EUR
800+0.61 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRL540NPBF pVersion=0046&contRep=ZT&docId=E1C04E895D7E0CF1A6F5005056AB5A8F&compId=irl540n.pdf?ci_sign=fffe8e2f0bd2c3ceeafab0607703bfe148937036
IRL540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Gate charge: 49.3nC
On-state resistance: 44mΩ
Power dissipation: 140W
Gate-source voltage: ±16V
Kind of package: tube
Technology: HEXFET®
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 533 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
69+1.04 EUR
78+0.92 EUR
85+0.85 EUR
100+0.78 EUR
250+0.69 EUR
500+0.63 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4668PBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C092F1A6F5005056AB5A8F&compId=irfp4668pbf.pdf?ci_sign=45a153989e46de31f118c0c4d47723eb943f959c
IRFP4668PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 9.7mΩ
Gate-source voltage: ±30V
Gate charge: 161nC
Technology: HEXFET®
Power dissipation: 520W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N60C3ATMA1 Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP24N60C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C338FC109074A&compId=SPP24N60C3.pdf?ci_sign=9b76c37c48399245f85e35d54b51d528dfd0f521
SPP24N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP373NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698AF53C194611C&compId=BSP373NH6327-DTE.pdf?ci_sign=1be32fe62dee5c6145f94a436eb224a821e0b90f
BSP373NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
104+0.69 EUR
115+0.63 EUR
124+0.58 EUR
250+0.55 EUR
500+0.5 EUR
1000+0.48 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710LPBF pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620
IRF3710LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7A9BF1A6F5005056AB5A8F&compId=irf3710.pdf?ci_sign=58420826307cbd2f57fbdcc4bdcc928b163a71e8
IRF3710PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 86.7nC
Kind of package: tube
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
50+1.46 EUR
61+1.18 EUR
100+1.06 EUR
250+0.93 EUR
500+0.83 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRLPBF pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620
IRF3710STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 556 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
46+1.56 EUR
55+1.31 EUR
100+1.21 EUR
250+1.08 EUR
500+0.98 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRRPBF pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620
IRF3710STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZPBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7AA9F1A6F5005056AB5A8F&compId=irf3710z.pdf?ci_sign=f9d6d4f1059e7eaeb12e5a0e9cd515b090f6184f
IRF3710ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 82nC
Kind of package: tube
auf Bestellung 535 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
48+1.52 EUR
61+1.18 EUR
66+1.09 EUR
74+0.98 EUR
100+0.9 EUR
200+0.83 EUR
500+0.77 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZSTRLPBF pVersion=0046&contRep=ZT&docId=E21F625028A726F1A303005056AB0C4F&compId=irf3710zpbf.pdf?ci_sign=70754467c74fb0376ae6b25e3bd2dab2f3f80757
IRF3710ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF3710ZSTRL pVersion=0046&contRep=ZT&docId=E1C045883D5208F1A6F5005056AB5A8F&compId=auirf3710z.pdf?ci_sign=6c2c0c9f256e5a525498972404a7f2a1a6ec5bed
AUIRF3710ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP250MPBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAEBDC8FAB880E0C7&compId=irfp250mpbf.pdf?ci_sign=ce2f9fec1af75e4313268991e3189becda06ef59
IRFP250MPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 123nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
36+2 EUR
44+1.64 EUR
50+1.44 EUR
100+1.3 EUR
125+1.26 EUR
250+1.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFP250NPBF description pVersion=0046&contRep=ZT&docId=E1C04E653ACAB8F1A6F5005056AB5A8F&compId=irfp250n.pdf?ci_sign=efbdd605b5da163688cfe68402cea5bf7e3f98b6
IRFP250NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 123nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.29 EUR
30+2.39 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRFP260MPBF pVersion=0046&contRep=ZT&docId=E221BEC03C8E98F1A303005056AB0C4F&compId=irfp260mpbf.pdf?ci_sign=4f4a731c521cae55b4f5ea375c88274ca42c4872
IRFP260MPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
27+2.66 EUR
33+2.22 EUR
40+1.82 EUR
50+1.63 EUR
100+1.52 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFP260NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACABFF1A6F5005056AB5A8F&compId=irfp260n.pdf?ci_sign=f3e8a7b27a58ae203b2eeadd5c846979cd6cf1ff
IRFP260NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 638 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.98 EUR
25+2.89 EUR
27+2.67 EUR
50+2.53 EUR
100+2.37 EUR
125+2.35 EUR
250+2.19 EUR
400+2.1 EUR
500+2.04 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRFP2907PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACACDF1A6F5005056AB5A8F&compId=irfp2907.pdf?ci_sign=4baf6082075992952a372b584b3f66e1a7437e61
IRFP2907PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
25+2.95 EUR
100+2.77 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRF1407PBF description pVersion=0046&contRep=ZT&docId=005056AB90B41EDBABB04EA951DD00C7&compId=irf1407pbf.pdf?ci_sign=d745832aa8dbbd733b93dbfdb32259059f0f1a39
IRF1407PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
51+1.42 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRF1407STRLPBF infineon-irf1407spbf-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP08N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A5F4C2AA11CC&compId=IKP08N65H5-DTE.pdf?ci_sign=10d18d1a8c7b016c4dba2298e11ded404d5503e4
IKP08N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Pulsed collector current: 24A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Collector current: 18A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPA08N80C3 INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw
SPA08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Technology: CoolMOS™
Case: PG-TO220-3-FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 8A
Gate-source voltage: ±20V
Power dissipation: 40W
Drain-source voltage: 800V
Kind of package: tube
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
25+2.96 EUR
28+2.56 EUR
30+2.43 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IKA10N65ET6XKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE895EFAAFFDA7933D6&compId=IKA10N65ET6.pdf?ci_sign=357318a9289c8383d9971a53bdf9a9a379462c13
IKA10N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 27nC
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Manufacturer series: T6
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
43+1.69 EUR
50+1.62 EUR
100+1.46 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N65S5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6450028E1820&compId=IGB15N65S5.pdf?ci_sign=dd7b19603f2615207670bc20e8bbe5e272f470ce
IGB15N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Turn-off time: 147ns
Turn-on time: 26ns
Collector current: 23A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4741CB2AD820&compId=IKB15N65EH5.pdf?ci_sign=f41aca0c31e21ad8910ab653a5cd8be8dccade59
IKB15N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: D2PAK
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Turn-off time: 172ns
Turn-on time: 33ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA57DFD7A71BF&compId=IKP15N65H5-DTE.pdf?ci_sign=a152a4dcb39347c0c777a80d3988833d2f0dbb62
IKP15N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 105W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
29+2.53 EUR
38+1.93 EUR
43+1.69 EUR
51+1.42 EUR
100+1.27 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
SPW20N60C3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C16093F72474A&compId=SPW20N60C3.pdf?ci_sign=afd7f24a2b3398c2d40ac67fa04a496e8428135d
SPW20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
26+2.77 EUR
29+2.47 EUR
32+2.29 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
SPP20N60C3 pVersion=0046&contRep=ZT&docId=E1C058D08A5F9CF1A6F5005056AB5A8F&compId=spp20n60c3.pdf?ci_sign=e6782b5ab7a5620fbda75de79daa9ea3abc07fdf
SPP20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
26+2.79 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BSS169H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77F99D575011C&compId=BSS169H6327XTSA1.pdf?ci_sign=a9bbcd26f3e9a35aa02625482f4f09ca1954ddc4
BSS169H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 2080 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
197+0.36 EUR
260+0.28 EUR
295+0.24 EUR
350+0.2 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
BC850CWH6327
BC850CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4013 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
582+0.12 EUR
882+0.081 EUR
1036+0.069 EUR
1378+0.052 EUR
1458+0.049 EUR
3000+0.047 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BFP450H6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DDA96116A11C&compId=BFP450H6327-dte.pdf?ci_sign=869aabd374218b38f27d0b850e6b9558fedfe383
BFP450H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Kind of package: reel; tape
Kind of transistor: RF
Technology: SIEGET™
Collector current: 0.17A
Power dissipation: 0.5W
Collector-emitter voltage: 4.5V
Frequency: 24GHz
Polarisation: bipolar
Case: SOT343
Mounting: SMD
auf Bestellung 1223 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
128+0.56 EUR
172+0.42 EUR
250+0.38 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
IR2113SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC18200CC175EA&compId=IR2113SPBF.pdf?ci_sign=445f264982eff687f2c3ea74a5c723ef83eaa518
IR2113SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 111ns
Turn-on time: 145ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Case: SO16-W
Output current: -2...2A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.7 EUR
17+4.28 EUR
20+3.65 EUR
25+3.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR2113STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DE9CE83C8194469&compId=IR2113STRPBF.pdf?ci_sign=f472be02cbac0b51bd26e1eb6c28c6572262f783
IR2113STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Kind of package: reel; tape
Operating temperature: -40...125°C
Turn-off time: 111ns
Turn-on time: 145ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Case: SO16-W
Output current: -2...2A
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
28+2.59 EUR
30+2.45 EUR
32+2.25 EUR
50+2.1 EUR
100+1.99 EUR
125+1.96 EUR
250+1.87 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
BCV61CE6327 pVersion=0046&contRep=ZT&docId=E1C04721884404F1A6F5005056AB5A8F&compId=bcv61.pdf?ci_sign=4d6a08eff3d6704cd395cd2fded12cf9d04fe558
BCV61CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Case: SOT143
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 30V
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 1351 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
260+0.28 EUR
379+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IRF5305PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7B35F1A6F5005056AB5A8F&compId=irf5305.pdf?ci_sign=656642a39f5b3170605577600e1ea658be004530
IRF5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
64+1.13 EUR
74+0.97 EUR
84+0.85 EUR
100+0.76 EUR
200+0.68 EUR
250+0.66 EUR
500+0.61 EUR
1000+0.58 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2442 2443 2444 2445 2446 2447 2448 2449 2450 2451 2452 2490 2496  [ Nächste Seite >> ]