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IRFS7440TRLPBF IRFS7440TRLPBF INFINEON TECHNOLOGIES IRFS7440TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES IKCM30F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
auf Bestellung 14 Stücke:
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3+24.42 EUR
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IRF9317TRPBF IRF9317TRPBF INFINEON TECHNOLOGIES irf9317pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 INFINEON TECHNOLOGIES ICE2PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 590 Stücke:
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41+1.77 EUR
46+1.59 EUR
54+1.33 EUR
57+1.26 EUR
500+1.20 EUR
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ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 INFINEON TECHNOLOGIES INFNS16600-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 2476 Stücke:
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46+1.57 EUR
58+1.24 EUR
80+0.90 EUR
85+0.85 EUR
1000+0.82 EUR
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IRFB7437PBF IRFB7437PBF INFINEON TECHNOLOGIES IRFB7437PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 110 Stücke:
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34+2.16 EUR
61+1.19 EUR
70+1.03 EUR
74+0.97 EUR
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IR21834SPBF IR21834SPBF INFINEON TECHNOLOGIES IR2183SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
auf Bestellung 11 Stücke:
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11+6.51 EUR
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IHW30N120R5XKSA1 IHW30N120R5XKSA1 INFINEON TECHNOLOGIES IHW30N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 363ns
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.20 EUR
23+3.13 EUR
25+2.96 EUR
60+2.92 EUR
120+2.85 EUR
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IAUC60N06S5L073ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9.8mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.6nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 168A
Mounting: SMD
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IAUC60N06S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 168A
Mounting: SMD
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IPA060N06NM5SXKSA1 IPA060N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA060N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cebbb676e20 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 224A
Mounting: THT
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
42+1.72 EUR
48+1.50 EUR
55+1.30 EUR
59+1.23 EUR
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IPA060N06NXKSA1 IPA060N06NXKSA1 INFINEON TECHNOLOGIES IPA060N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IPP060N06NAKSA1 IPP060N06NAKSA1 INFINEON TECHNOLOGIES IPP060N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 6mΩ
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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BGS12P2L6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Mounting: SMD
Application: telecommunication
Case: TSLP-6-4
Output configuration: SPDT
Bandwidth: 0.05...6GHz
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Produkt ist nicht verfügbar
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IRF9Z24NPBF IRF9Z24NPBF INFINEON TECHNOLOGIES irf9z24n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 444 Stücke:
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107+0.67 EUR
176+0.41 EUR
186+0.38 EUR
Mindestbestellmenge: 107
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IRF9Z24NSTRLPBF INFINEON TECHNOLOGIES Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BAT6404E6327HTSA1 BAT6404E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 1236 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
667+0.11 EUR
855+0.08 EUR
958+0.08 EUR
1147+0.06 EUR
1214+0.06 EUR
Mindestbestellmenge: 455
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IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
77+0.93 EUR
159+0.45 EUR
169+0.42 EUR
Mindestbestellmenge: 55
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IRLR3410TRRPBF IRLR3410TRRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BSS127H6327XTSA2 BSS127H6327XTSA2 INFINEON TECHNOLOGIES BSS127H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 500Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4791 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
300+0.24 EUR
376+0.19 EUR
443+0.16 EUR
511+0.14 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 173
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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
auf Bestellung 2010 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
281+0.25 EUR
472+0.15 EUR
633+0.11 EUR
685+0.10 EUR
Mindestbestellmenge: 179
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IHW20N120R5XKSA1 IHW20N120R5XKSA1 INFINEON TECHNOLOGIES IHW20N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.31 EUR
22+3.35 EUR
23+3.16 EUR
Mindestbestellmenge: 14
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IRF7317TRPBF IRF7317TRPBF INFINEON TECHNOLOGIES irf7317pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5090-1EJA BTS5090-1EJA INFINEON TECHNOLOGIES BTS5090-1EJA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
auf Bestellung 2270 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
49+1.49 EUR
55+1.32 EUR
61+1.19 EUR
65+1.12 EUR
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IRS2110SPBF IRS2110SPBF INFINEON TECHNOLOGIES irs2110.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
auf Bestellung 23 Stücke:
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16+4.60 EUR
21+3.47 EUR
22+3.29 EUR
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IRS2117SPBF IRS2117SPBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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IRS2118PBF IRS2118PBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
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IRS2118SPBF IRS2118SPBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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BCR116SH6327 BCR116SH6327 INFINEON TECHNOLOGIES BCR116.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
527+0.14 EUR
589+0.12 EUR
735+0.10 EUR
Mindestbestellmenge: 527
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BAS16UE6327HTSA1 BAS16UE6327HTSA1 INFINEON TECHNOLOGIES BAS16SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4750 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.20 EUR
379+0.19 EUR
410+0.17 EUR
477+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 358
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BAV70UE6327HTSA1 BAV70UE6327HTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 9024 Stücke:
Lieferzeit 14-21 Tag (e)
2977+0.02 EUR
Mindestbestellmenge: 2977
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BAV99UE6327HTSA1 BAV99UE6327HTSA1 INFINEON TECHNOLOGIES BAV99SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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BAW101E6327HTSA1 BAW101E6327HTSA1 INFINEON TECHNOLOGIES BAW101E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Max. off-state voltage: 300V
Load current: 0.25A
Semiconductor structure: double independent
Reverse recovery time: 1µs
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT143
auf Bestellung 1745 Stücke:
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BAT165E6327HTSA1 BAT165E6327HTSA1 INFINEON TECHNOLOGIES BAT165E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
auf Bestellung 11896 Stücke:
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290+0.25 EUR
345+0.21 EUR
374+0.19 EUR
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9000+0.10 EUR
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BAS4004E6327HTSA1 BAS4004E6327HTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 7740 Stücke:
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407+0.18 EUR
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BAS4005E6327HTSA1 BAS4005E6327HTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2500 Stücke:
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278+0.26 EUR
407+0.18 EUR
569+0.13 EUR
667+0.11 EUR
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1071+0.07 EUR
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BAS4007E6327HTSA1 BAS4007E6327HTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 895 Stücke:
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200+0.36 EUR
309+0.23 EUR
388+0.18 EUR
432+0.17 EUR
562+0.13 EUR
589+0.12 EUR
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BAT1503WE6327HTSA1 BAT1503WE6327HTSA1 INFINEON TECHNOLOGIES BAT1503WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 4V; 0.11A; 100mW
Power dissipation: 0.1W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
auf Bestellung 1234 Stücke:
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74+0.97 EUR
135+0.53 EUR
194+0.37 EUR
281+0.25 EUR
296+0.24 EUR
1000+0.23 EUR
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SMBTA42E6327HTSA1 SMBTA42E6327HTSA1 INFINEON TECHNOLOGIES SMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
355+0.20 EUR
481+0.15 EUR
550+0.13 EUR
893+0.08 EUR
944+0.08 EUR
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BC858BE6327 BC858BE6327 INFINEON TECHNOLOGIES BC858CE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.10 EUR
1115+0.06 EUR
1260+0.06 EUR
1460+0.05 EUR
1540+0.05 EUR
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BC858CE6327 BC858CE6327 INFINEON TECHNOLOGIES BC858CE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 670 Stücke:
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BCV27E6327 BCV27E6327 INFINEON TECHNOLOGIES BCV27E6327.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of transistor: Darlington
auf Bestellung 2775 Stücke:
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285+0.25 EUR
610+0.12 EUR
676+0.11 EUR
848+0.08 EUR
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 INFINEON TECHNOLOGIES BC817UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 147 Stücke:
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147+0.49 EUR
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BC846UE6327HTSA1 BC846UE6327HTSA1 INFINEON TECHNOLOGIES BC846UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 258 Stücke:
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258+0.27 EUR
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BC856UE6327 BC856UE6327 INFINEON TECHNOLOGIES BC856UE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1008 Stücke:
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439+0.16 EUR
550+0.13 EUR
582+0.12 EUR
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BFR106E6327 BFR106E6327 INFINEON TECHNOLOGIES BFR106E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Frequency: 5GHz
Collector-emitter voltage: 16V
Collector current: 0.21A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: SOT23
auf Bestellung 1936 Stücke:
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186+0.39 EUR
236+0.30 EUR
309+0.23 EUR
447+0.16 EUR
477+0.15 EUR
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BFR92PE6327 BFR92PE6327 INFINEON TECHNOLOGIES BFR92p.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Frequency: 5GHz
Collector-emitter voltage: 15V
Collector current: 45mA
Type of transistor: NPN
Power dissipation: 0.28W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: SOT23
auf Bestellung 150 Stücke:
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150+0.47 EUR
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BSR302NL6327HTSA1 BSR302NL6327HTSA1 INFINEON TECHNOLOGIES BSR302NL6327HTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Produkt ist nicht verfügbar
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BFP193E6327 BFP193E6327 INFINEON TECHNOLOGIES BFP193E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Case: SOT143
Frequency: 8GHz
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 80mA
Type of transistor: NPN
Power dissipation: 0.58W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
auf Bestellung 937 Stücke:
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228+0.31 EUR
277+0.26 EUR
363+0.20 EUR
521+0.14 EUR
550+0.13 EUR
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BCR133E6327 BCR133E6327 INFINEON TECHNOLOGIES BCR133.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Frequency: 130MHz
auf Bestellung 1420 Stücke:
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955+0.08 EUR
1087+0.07 EUR
1417+0.05 EUR
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SMBTA06E6327 SMBTA06E6327 INFINEON TECHNOLOGIES SMBTA06E6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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BCR158E6327 BCR158E6327 INFINEON TECHNOLOGIES BCR158.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT23
auf Bestellung 10838 Stücke:
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969+0.07 EUR
1112+0.06 EUR
1257+0.06 EUR
1450+0.05 EUR
1534+0.05 EUR
3000+0.05 EUR
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BAR6403WE6327HTSA1 BAR6403WE6327HTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
auf Bestellung 1905 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
521+0.14 EUR
562+0.13 EUR
589+0.12 EUR
633+0.11 EUR
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BAR6404E6327HTSA1 BAR6404E6327HTSA1 INFINEON TECHNOLOGIES BAR64-04.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Semiconductor structure: double series
Power dissipation: 0.25W
Type of diode: switching
auf Bestellung 1803 Stücke:
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193+0.37 EUR
296+0.24 EUR
384+0.19 EUR
573+0.12 EUR
890+0.08 EUR
940+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 193
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BAR66E6327HTSA1 BAR66E6327HTSA1 INFINEON TECHNOLOGIES bar66series.pdf Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 12A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN
Mounting: SMD
Semiconductor structure: double series
Power dissipation: 0.25W
Type of diode: switching
auf Bestellung 1520 Stücke:
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179+0.40 EUR
252+0.28 EUR
353+0.20 EUR
414+0.17 EUR
435+0.16 EUR
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BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES BAx92-DTE.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Mounting: SMD
Capacitance: 0.6...1.4pF
Semiconductor structure: single diode
Leakage current: 20nA
Type of diode: switching
auf Bestellung 1155 Stücke:
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365+0.20 EUR
405+0.18 EUR
460+0.16 EUR
500+0.14 EUR
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BAR6303WE6327HTSA1 BAR6303WE6327HTSA1 INFINEON TECHNOLOGIES BAR63xx_ser.pdf Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
auf Bestellung 2624 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
311+0.23 EUR
412+0.17 EUR
635+0.11 EUR
827+0.09 EUR
910+0.08 EUR
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BC817UPNE6327HTSA1 BC817UPNE6327HTSA1 INFINEON TECHNOLOGIES BC817UPNE6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 7020 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
215+0.33 EUR
275+0.26 EUR
404+0.18 EUR
428+0.17 EUR
Mindestbestellmenge: 136
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327HTSA1 INFINEON TECHNOLOGIES BAS3007ARPPE6327.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Case: SOT143
Max. off-state voltage: 30V
Load current: 0.9A
Max. forward impulse current: 5A
Kind of package: reel; tape
auf Bestellung 4629 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
156+0.46 EUR
182+0.39 EUR
240+0.30 EUR
253+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 125
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327HTSA1 INFINEON TECHNOLOGIES BAS4002ARPPE6327.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
166+0.43 EUR
239+0.30 EUR
252+0.28 EUR
500+0.27 EUR
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IRFS7440TRLPBF IRFS7440TRLPBF.pdf
IRFS7440TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKCM30F60GAXKMA1 IKCM30F60GA.pdf
IKCM30F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.42 EUR
Mindestbestellmenge: 3
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IRF9317TRPBF irf9317pbf.pdf
IRF9317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2PCS01GXUMA1 ICE2PCS01G.pdf
ICE2PCS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 590 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
46+1.59 EUR
54+1.33 EUR
57+1.26 EUR
500+1.20 EUR
Mindestbestellmenge: 41
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ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
ICE2PCS05GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 2476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
58+1.24 EUR
80+0.90 EUR
85+0.85 EUR
1000+0.82 EUR
Mindestbestellmenge: 46
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IRFB7437PBF IRFB7437PBF.pdf
IRFB7437PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
61+1.19 EUR
70+1.03 EUR
74+0.97 EUR
Mindestbestellmenge: 34
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IR21834SPBF IR2183SPBF.pdf
IR21834SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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IHW30N120R5XKSA1 IHW30N120R5.pdf
IHW30N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 363ns
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.20 EUR
23+3.13 EUR
25+2.96 EUR
60+2.92 EUR
120+2.85 EUR
Mindestbestellmenge: 18
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IAUC60N06S5L073ATMA1 Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9.8mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.6nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 168A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N06S5N074ATMA1 Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 168A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA060N06NM5SXKSA1 Infineon-IPA060N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cebbb676e20
IPA060N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 224A
Mounting: THT
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
42+1.72 EUR
48+1.50 EUR
55+1.30 EUR
59+1.23 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IPA060N06NXKSA1 IPA060N06N-DTE.pdf
IPA060N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP060N06NAKSA1 IPP060N06NAKSA1-DTE.pdf
IPP060N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 6mΩ
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Mounting: SMD
Application: telecommunication
Case: TSLP-6-4
Output configuration: SPDT
Bandwidth: 0.05...6GHz
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Produkt ist nicht verfügbar
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IRF9Z24NPBF irf9z24n.pdf
IRF9Z24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
176+0.41 EUR
186+0.38 EUR
Mindestbestellmenge: 107
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IRF9Z24NSTRLPBF Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6404E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 1236 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
667+0.11 EUR
855+0.08 EUR
958+0.08 EUR
1147+0.06 EUR
1214+0.06 EUR
Mindestbestellmenge: 455
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IRLR3410TRPBF description irlr3410pbf.pdf
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
77+0.93 EUR
159+0.45 EUR
169+0.42 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRRPBF irlr3410pbf.pdf
IRLR3410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS127H6327XTSA2 BSS127H6327XTSA2.pdf
BSS127H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 500Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
300+0.24 EUR
376+0.19 EUR
443+0.16 EUR
511+0.14 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 173
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BAR6402VH6327XTSA1 BAR64xx_Ser.pdf
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
auf Bestellung 2010 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
281+0.25 EUR
472+0.15 EUR
633+0.11 EUR
685+0.10 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N120R5XKSA1 IHW20N120R5.pdf
IHW20N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.31 EUR
22+3.35 EUR
23+3.16 EUR
Mindestbestellmenge: 14
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IRF7317TRPBF description irf7317pbf.pdf
IRF7317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5090-1EJA BTS5090-1EJA.pdf
BTS5090-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
auf Bestellung 2270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
49+1.49 EUR
55+1.32 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 44
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IRS2110SPBF description irs2110.pdf
IRS2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.60 EUR
21+3.47 EUR
22+3.29 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRS2117SPBF irs2117pbf.pdf
IRS2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118PBF irs2117pbf.pdf
IRS2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118SPBF irs2117pbf.pdf
IRS2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR116SH6327 BCR116.pdf
BCR116SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT363
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
527+0.14 EUR
589+0.12 EUR
735+0.10 EUR
Mindestbestellmenge: 527
Im Einkaufswagen  Stück im Wert von  UAH
BAS16UE6327HTSA1 BAS16SH6327XTSA1.pdf
BAS16UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.20 EUR
379+0.19 EUR
410+0.17 EUR
477+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BAV70UE6327HTSA1 BAV70E6327HTSA1.pdf
BAV70UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 9024 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2977+0.02 EUR
Mindestbestellmenge: 2977
Im Einkaufswagen  Stück im Wert von  UAH
BAV99UE6327HTSA1 BAV99SH6327XTSA1.pdf
BAV99UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
222+0.33 EUR
Mindestbestellmenge: 222
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BAW101E6327HTSA1 BAW101E6327HTSA1.pdf
BAW101E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Max. off-state voltage: 300V
Load current: 0.25A
Semiconductor structure: double independent
Reverse recovery time: 1µs
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT143
auf Bestellung 1745 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
375+0.19 EUR
455+0.16 EUR
520+0.14 EUR
575+0.12 EUR
Mindestbestellmenge: 375
Im Einkaufswagen  Stück im Wert von  UAH
BAT165E6327HTSA1 BAT165E6327HTSA1.pdf
BAT165E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
auf Bestellung 11896 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
290+0.25 EUR
345+0.21 EUR
374+0.19 EUR
667+0.11 EUR
715+0.10 EUR
9000+0.10 EUR
Mindestbestellmenge: 162
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BAS4004E6327HTSA1 BAS4004E6327HTSA1.pdf
BAS4004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 7740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
407+0.18 EUR
557+0.13 EUR
1076+0.07 EUR
1137+0.06 EUR
Mindestbestellmenge: 313
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BAS4005E6327HTSA1 BAS4004E6327HTSA1.pdf
BAS4005E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
407+0.18 EUR
569+0.13 EUR
667+0.11 EUR
834+0.09 EUR
1071+0.07 EUR
1132+0.06 EUR
Mindestbestellmenge: 278
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BAS4007E6327HTSA1 BAS4004E6327HTSA1.pdf
BAS4007E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
309+0.23 EUR
388+0.18 EUR
432+0.17 EUR
562+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 200
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BAT1503WE6327HTSA1 BAT1503WE6327HTSA1.pdf
BAT1503WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 4V; 0.11A; 100mW
Power dissipation: 0.1W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
auf Bestellung 1234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
135+0.53 EUR
194+0.37 EUR
281+0.25 EUR
296+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 74
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SMBTA42E6327HTSA1 SMBTA42.pdf
SMBTA42E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
355+0.20 EUR
481+0.15 EUR
550+0.13 EUR
893+0.08 EUR
944+0.08 EUR
Mindestbestellmenge: 200
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BC858BE6327 BC858CE6327.pdf
BC858BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
725+0.10 EUR
1115+0.06 EUR
1260+0.06 EUR
1460+0.05 EUR
1540+0.05 EUR
Mindestbestellmenge: 725
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BC858CE6327 BC858CE6327.pdf
BC858CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
670+0.11 EUR
Mindestbestellmenge: 670
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BCV27E6327 BCV27E6327.pdf
BCV27E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of transistor: Darlington
auf Bestellung 2775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
285+0.25 EUR
610+0.12 EUR
676+0.11 EUR
848+0.08 EUR
893+0.08 EUR
Mindestbestellmenge: 285
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BC817SUE6327HTSA1 BC817UE6327.pdf
BC817SUE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
147+0.49 EUR
Mindestbestellmenge: 147
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BC846UE6327HTSA1 BC846UE6327.pdf
BC846UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
258+0.27 EUR
Mindestbestellmenge: 258
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BC856UE6327 BC856UE6327.pdf
BC856UE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1008 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
345+0.21 EUR
439+0.16 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 345
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BFR106E6327 BFR106E6327-dte.pdf
BFR106E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Frequency: 5GHz
Collector-emitter voltage: 16V
Collector current: 0.21A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: SOT23
auf Bestellung 1936 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
236+0.30 EUR
309+0.23 EUR
447+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 186
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BFR92PE6327 BFR92p.pdf
BFR92PE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Frequency: 5GHz
Collector-emitter voltage: 15V
Collector current: 45mA
Type of transistor: NPN
Power dissipation: 0.28W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: SOT23
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+0.47 EUR
Mindestbestellmenge: 150
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BSR302NL6327HTSA1 BSR302NL6327HTSA1.pdf
BSR302NL6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Produkt ist nicht verfügbar
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BFP193E6327 BFP193E6327-dte.pdf
BFP193E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Case: SOT143
Frequency: 8GHz
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 80mA
Type of transistor: NPN
Power dissipation: 0.58W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
auf Bestellung 937 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
277+0.26 EUR
363+0.20 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 228
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BCR133E6327 BCR133.pdf
BCR133E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Frequency: 130MHz
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
955+0.08 EUR
1087+0.07 EUR
1417+0.05 EUR
Mindestbestellmenge: 955
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SMBTA06E6327 SMBTA06E6327.pdf
SMBTA06E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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BCR158E6327 BCR158.pdf
BCR158E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT23
auf Bestellung 10838 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
969+0.07 EUR
1112+0.06 EUR
1257+0.06 EUR
1450+0.05 EUR
1534+0.05 EUR
3000+0.05 EUR
Mindestbestellmenge: 969
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BAR6403WE6327HTSA1 BAR64xx_Ser.pdf
BAR6403WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
auf Bestellung 1905 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
521+0.14 EUR
562+0.13 EUR
589+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 278
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BAR6404E6327HTSA1 BAR64-04.pdf
BAR6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Semiconductor structure: double series
Power dissipation: 0.25W
Type of diode: switching
auf Bestellung 1803 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
296+0.24 EUR
384+0.19 EUR
573+0.12 EUR
890+0.08 EUR
940+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 193
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BAR66E6327HTSA1 bar66series.pdf
BAR66E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 12A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN
Mounting: SMD
Semiconductor structure: double series
Power dissipation: 0.25W
Type of diode: switching
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
252+0.28 EUR
353+0.20 EUR
414+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 179
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BA592E6327HTSA1 BAx92-DTE.pdf
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Mounting: SMD
Capacitance: 0.6...1.4pF
Semiconductor structure: single diode
Leakage current: 20nA
Type of diode: switching
auf Bestellung 1155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
365+0.20 EUR
405+0.18 EUR
460+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 365
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BAR6303WE6327HTSA1 BAR63xx_ser.pdf
BAR6303WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Semiconductor structure: single diode
Power dissipation: 0.25W
Type of diode: switching
auf Bestellung 2624 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
311+0.23 EUR
412+0.17 EUR
635+0.11 EUR
827+0.09 EUR
910+0.08 EUR
Mindestbestellmenge: 209
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BC817UPNE6327HTSA1 BC817UPNE6327.pdf
BC817UPNE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 7020 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
215+0.33 EUR
275+0.26 EUR
404+0.18 EUR
428+0.17 EUR
Mindestbestellmenge: 136
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327.pdf
BAS3007ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Case: SOT143
Max. off-state voltage: 30V
Load current: 0.9A
Max. forward impulse current: 5A
Kind of package: reel; tape
auf Bestellung 4629 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
156+0.46 EUR
182+0.39 EUR
240+0.30 EUR
253+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 125
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327.pdf
BAS4002ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
166+0.43 EUR
239+0.30 EUR
252+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 112
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