Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149742) > Seite 2450 nach 2496

Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2445 2446 2447 2448 2449 2450 2451 2452 2453 2454 2455 2490 2496  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SLB9672AU20FW1613XTMA1 SLB9672AU20FW1613XTMA1 Infineon Technologies infineon-optigatpmslb9672fw16-datasheet-v01_10-en.pdf Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SLB9672VU20FW1522XTMA1 Infineon Technologies infineon-optigatpmslb9672fw16-datasheet-v01_10-en.pdf Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTC025N15NM6ATMA1 Infineon Technologies Infineon-IPTC025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740b75c7021 IPTC025N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT025N15NM6ATMA1 Infineon Technologies infineon-ipt025n15nm6-datasheet-v02_00-en.pdf Trans MOSFET N-CH 150V 26A 9-Pin(8+Tab) HSOF T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC055N15NM6ATMA1 Infineon Technologies Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9 ISC055N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC044N15NM6ATMA1 Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 ISC044N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPF026N15NM6ATMA1 Infineon Technologies Infineon-IPF026N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752f9db7046 IPF026N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP089N15NM6AKSA1 Infineon Technologies IPP089N15NM6AKSA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T3401N33TOFS20XPSA1 Infineon Technologies SP000091136
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL215C H6327 Infineon Technologies 4040bsl215c_rev2.2.pdffolderiddb3a30431add1d95011aed428f2d0285fileidd.pdf Trans MOSFET N/P-CH 20V 1.5A Automotive AEC-Q101 6-Pin TSOP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGB20N60H3ATMA1 IGB20N60H3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B312B277740FA8&compId=IGB20N60H3-DTE.pdf?ci_sign=0f3733d7448ee4dd198f33ca4df5522dc9423f33 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK
Type of transistor: IGBT
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.97 EUR
41+1.76 EUR
53+1.36 EUR
57+1.27 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IGP20N60H3XKSA1 IGP20N60H3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31E4E0579CFA8&compId=IGP20N60H3-DTE.pdf?ci_sign=5ea793c44841df8daddabd0123666b394a69457b Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Power dissipation: 170W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
38+1.89 EUR
43+1.70 EUR
44+1.63 EUR
47+1.53 EUR
250+1.49 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IGW20N60H3FKSA1 IGW20N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B364F1E8194FA8&compId=IGW20N60H3-DTE.pdf?ci_sign=029fb8913da8355d7db4e94074a1077f0f592f1f Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 170W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.35 EUR
24+3.00 EUR
32+2.26 EUR
34+2.13 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N60H3ATMA1 IKB20N60H3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4BEE48ED3820&compId=IKB20N60H3.pdf?ci_sign=6e59697a1b11c9314964694537e7c76c6542e9f8 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N60TATMA1 IKB20N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD52D9F6417820&compId=IKB20N60T.pdf?ci_sign=c235205cf7eddca1fd52b37a7c3b186c20f8ddcc Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60H3XKSA1 IKP20N60H3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACF6E42879FE51BF&compId=IKP20N60H3-DTE.pdf?ci_sign=81822baaae1c458e541be05689ce6b6972ffcdff Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 31ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60TXKSA1 IKP20N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A8D07DB193BFE74A&compId=IKP20N60T.pdf?ci_sign=7c0e65ea17092b5cb44f595a48490fa898091448 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
27+2.65 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IKW20N60H3FKSA1 IKW20N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE6F66D4F3B820&compId=IKW20N60H3.pdf?ci_sign=17f202bc94e3ffba54d73940142cc54f9595779a Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 28ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.05 EUR
16+4.55 EUR
21+3.47 EUR
22+3.27 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW20N60TFKSA1 IKW20N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A8D06C564238274A&compId=IKW20N60T.pdf?ci_sign=446b88dff3d758d9a2f7512499a17ea6b9e28d8b Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.62 EUR
24+3.05 EUR
25+2.89 EUR
60+2.86 EUR
120+2.77 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SPA20N60C3 SPA20N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C058D08A5F9CF1A6F5005056AB5A8F&compId=spp20n60c3.pdf?ci_sign=e6782b5ab7a5620fbda75de79daa9ea3abc07fdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.71 EUR
14+5.11 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SPA20N60CFDXKSA1 SPA20N60CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC030A66F7A8143&compId=SPA20N60CFD.pdf?ci_sign=ba37c191af9a9c354ab1361f3a3d77038999c3fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB20N60C3 SPB20N60C3 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.49 EUR
21+3.43 EUR
23+3.25 EUR
250+3.20 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SPB20N60S5 SPB20N60S5 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58CD214FC83874A&compId=SPB20N60S5.pdf?ci_sign=c10e80218ee233c1423c180589fd11a6a8f52b71 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0030TRPBF IRLML0030TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825D2F1A6F5005056AB5A8F&compId=irlml0030pbf.pdf?ci_sign=0967246e14c499dac7fba1009378f5d12f33bab0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2139 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
268+0.27 EUR
404+0.18 EUR
685+0.10 EUR
725+0.10 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IRFR220NTRPBF IRFR220NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C119302F95F1A303005056AB0C4F&compId=irfr220npbf.pdf?ci_sign=c9508836b8df0e5004441533b4bc289849090945 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Case: DPAK
Drain-source voltage: 200V
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 1793 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
70+1.04 EUR
190+0.38 EUR
200+0.36 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
BAS1602VH6327XTSA1 BAS1602VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7CC646E270469&compId=BAS1602VH6327XTSA1.pdf?ci_sign=9415141bb43cbdd448b57243d992c4e3a4580712 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 3291 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
807+0.09 EUR
893+0.08 EUR
1064+0.07 EUR
1183+0.06 EUR
1299+0.06 EUR
1374+0.05 EUR
3000+0.05 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BAS1603WE6327HTSA1 BAS1603WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7D630FF0A8469&compId=BAS1603WE6327HTSA1.pdf?ci_sign=501120ed8e0387d0f68781981619815a428c2884 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)
410+0.17 EUR
895+0.08 EUR
995+0.07 EUR
1200+0.06 EUR
1270+0.06 EUR
Mindestbestellmenge: 410
Im Einkaufswagen  Stück im Wert von  UAH
BAS16E6327HTSA1 BAS16E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7D630FF0A8469&compId=BAS1603WE6327HTSA1.pdf?ci_sign=501120ed8e0387d0f68781981619815a428c2884 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 13571 Stücke:
Lieferzeit 14-21 Tag (e)
777+0.09 EUR
893+0.08 EUR
1087+0.07 EUR
1211+0.06 EUR
1306+0.06 EUR
1484+0.05 EUR
1573+0.05 EUR
Mindestbestellmenge: 777
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48NPBF IRFZ48NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D505604F1A6F5005056AB5A8F&compId=irfz48n.pdf?ci_sign=0785d6983816823690d6245fa8826bf83d081d69 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
83+0.87 EUR
135+0.53 EUR
143+0.50 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48NSTRLPBF IRFZ48NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221CB291B1DFEF1A303005056AB0C4F&compId=irfz48nspbf.pdf?ci_sign=1d8f5a5fcf7cd5af31a38e0f4a5d2613bced05ee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7545PBF IRFB7545PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6A1ACCC4AE1EC&compId=irfb7545pbf.pdf?ci_sign=9c5379c9bead593a424c708dc2ae499c899ed378 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
114+0.63 EUR
144+0.50 EUR
152+0.47 EUR
500+0.45 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
IRLML5203TRPBF IRLML5203TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227BD7369177F1A303005056AB0C4F&compId=irlml5203pbf.pdf?ci_sign=82ead9814132c2f6db5f76bc74feab6bb4ea01e5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
auf Bestellung 705 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
201+0.36 EUR
291+0.25 EUR
343+0.21 EUR
650+0.11 EUR
685+0.10 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
BC857AE6327 BC857AE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783DF60124ED30259&compId=BC857B-DTE.pdf?ci_sign=ba25cefced3e9fb3bec3567afbe372972cd47a0a Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1557 Stücke:
Lieferzeit 14-21 Tag (e)
1441+0.05 EUR
1557+0.05 EUR
Mindestbestellmenge: 1441
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z34NPBF IRF9Z34NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B680F1A6F5005056AB5A8F&compId=irf9z34n.pdf?ci_sign=d4acb9fe5df062d3e293b8568a174e680d014d81 description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
109+0.66 EUR
125+0.57 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 IKP15N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6BF0AC93A8A18&compId=IKP15N65F5.pdf?ci_sign=813dd2687d113f2ce86cd4f9b1d438357d641c10 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Collector current: 18A
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H5
Turn-off time: 166ns
Turn-on time: 24ns
Collector-emitter voltage: 650V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2104PBF IR2104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD865162496F5EA&compId=IR2104PBF.pdf?ci_sign=c171abf43ff720e30432806290c08be689b8dee1 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.09 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IR2104SPBF IR2104SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33E1F1A6F5005056AB5A8F&compId=ir2104.pdf?ci_sign=4359ee0159dafd1f6920f459f6db4eb8bb7e1e9d description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
41+1.74 EUR
45+1.60 EUR
48+1.50 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IR2104STRPBF IR2104STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD865162496F5EA&compId=IR2104PBF.pdf?ci_sign=c171abf43ff720e30432806290c08be689b8dee1 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 1909 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.80 EUR
62+1.17 EUR
83+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 IGB50N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31590A7878FA8&compId=IGB50N60T-DTE.pdf?ci_sign=60db27e8dc1b6cad47cbf90a3606a38d6dfebaed Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Power dissipation: 333W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP50N60TXKSA1 IGP50N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B359F284B34FA8&compId=IGP50N60T-DTE.pdf?ci_sign=2b05383ced2cbae508f7c97aac42cd7ba476fbe1 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 IGW50N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69DD2658122D64FA8&compId=IGW50N60H3-DTE.pdf?ci_sign=897e7d7b1107c9d184468cce9d50b26eda5e5dbb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.99 EUR
17+4.28 EUR
18+4.05 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37718FAED8FA8&compId=IGW50N60T-DTE.pdf?ci_sign=8e9d2e131bdbda93bfe3ca4fb8f78e7815e61628 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.52 EUR
17+4.23 EUR
18+3.99 EUR
30+3.98 EUR
120+3.85 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5CCBF5761D3D7&compId=IKW50N60DTP.pdf?ci_sign=94fc3287d74be6840256ba5010a252d8c5963f49 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Turn-on time: 50ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.60 EUR
29+2.47 EUR
31+2.33 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0CEE5938C0745&compId=IKW50N60H3.pdf?ci_sign=d334792eef4676a4984a2ca8adefbaef89e3863e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 54ns
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.61 EUR
15+4.83 EUR
120+4.76 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B597008ABEE131BF&compId=IKW50N60T-dte.pdf?ci_sign=4bece27f1d2991d109d3770530589bb18075b091 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.84 EUR
13+5.58 EUR
30+5.46 EUR
120+5.36 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA9B2D8CF93820&compId=AIKW50N60CT.pdf?ci_sign=b92086039af5d2b2a4bca0bef06f9bcd896bfdc7 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 55ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Turn-on time: 60ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE1A560ED2F820&compId=IKFW50N60ET.pdf?ci_sign=1dc63477d7ea1d12e4dda3141dab1803566a6fe8 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Turn-on time: 61ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S409ATMA2 INFINEON TECHNOLOGIES INFNS13307-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L08ATMA2 INFINEON TECHNOLOGIES INFNS14103-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L12ATMA2 IPD50N06S4L12ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA46AFD6105A143&compId=IPD50N06S4L12.pdf?ci_sign=c6c9560e346518f86140ea30fd599c19ca15cdc8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 2047 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.30 EUR
82+0.88 EUR
89+0.81 EUR
91+0.79 EUR
94+0.77 EUR
100+0.74 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 IPD350N06LGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC2F9789B411C&compId=IPD350N06LG-DTE.pdf?ci_sign=87fae814c5bc9e76dd51c3647c62fa14ffec9864 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 1555 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.50 EUR
75+0.96 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRF7313TRPBF IRF7313TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219D76070127F1A303005056AB0C4F&compId=irf7313pbf.pdf?ci_sign=e7bd49b91212a50639a11cd438aa89f6c9fcf565 description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7341QTR AUIRF7341QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D743AF1A6F5005056AB5A8F&compId=auirf7341q.pdf?ci_sign=6bea7d23124b569e130ea828412fdc252f1025d0 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PWH6327XTSA1 BSS84PWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928F8980DED1CC&compId=BSS84PWH6327XTSA1-dte.pdf?ci_sign=2d44725811f51a5fc8637fd959b8cb9ee3677c90 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 6167 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
556+0.13 EUR
711+0.10 EUR
794+0.09 EUR
1534+0.05 EUR
1624+0.04 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4AFA32A35D1CC&compId=IKW25N120H3-DTE.pdf?ci_sign=a514e131da34fbe6b92466a983691a3367199936 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.11 EUR
12+5.99 EUR
13+5.66 EUR
60+5.48 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NPBF IRFZ44NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF9C48B972F760D4&compId=IRFZ44Npbf.pdf?ci_sign=a0367694f4d7ca96e6cad6a8227012049aa7c754 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
On-state resistance: 17.5mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NSTRLPBF IRFZ44NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221CA9332C586F1A303005056AB0C4F&compId=irfz44nspbf.pdf?ci_sign=3fb2237c544e3a8e905dcabfe68cc494319ca22b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW60N60H3FKSA1 IGW60N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37B44CF164FA8&compId=IGW60N60H3-DTE.pdf?ci_sign=fb021fd10fc060d67c3fe8c683c021df2d088a5e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector current: 60A
Pulsed collector current: 180A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IKW60N60H3FKSA1 IKW60N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2CB8CEA107820&compId=IKW60N60H3.pdf?ci_sign=0a1ce94180d85bd783cd0fa622d1eaeca2db3871 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector current: 60A
Pulsed collector current: 180A
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.27 EUR
11+6.69 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SLB9672AU20FW1613XTMA1 infineon-optigatpmslb9672fw16-datasheet-v01_10-en.pdf
SLB9672AU20FW1613XTMA1
Hersteller: Infineon Technologies
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SLB9672VU20FW1522XTMA1 infineon-optigatpmslb9672fw16-datasheet-v01_10-en.pdf
Hersteller: Infineon Technologies
Secure MCU 32bit OPTIGA™ TPM RISC 51KB Flash 1.8V/3.3V 32-Pin UQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTC025N15NM6ATMA1 Infineon-IPTC025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740b75c7021
Hersteller: Infineon Technologies
IPTC025N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT025N15NM6ATMA1 infineon-ipt025n15nm6-datasheet-v02_00-en.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH 150V 26A 9-Pin(8+Tab) HSOF T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC055N15NM6ATMA1 Infineon-ISC055N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190772508436ff9
Hersteller: Infineon Technologies
ISC055N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC044N15NM6ATMA1 Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018
Hersteller: Infineon Technologies
ISC044N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPF026N15NM6ATMA1 Infineon-IPF026N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752f9db7046
Hersteller: Infineon Technologies
IPF026N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP089N15NM6AKSA1
Hersteller: Infineon Technologies
IPP089N15NM6AKSA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T3401N33TOFS20XPSA1
Hersteller: Infineon Technologies
SP000091136
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL215C H6327 4040bsl215c_rev2.2.pdffolderiddb3a30431add1d95011aed428f2d0285fileidd.pdf
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 20V 1.5A Automotive AEC-Q101 6-Pin TSOP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGB20N60H3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B312B277740FA8&compId=IGB20N60H3-DTE.pdf?ci_sign=0f3733d7448ee4dd198f33ca4df5522dc9423f33
IGB20N60H3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK
Type of transistor: IGBT
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
41+1.76 EUR
53+1.36 EUR
57+1.27 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IGP20N60H3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31E4E0579CFA8&compId=IGP20N60H3-DTE.pdf?ci_sign=5ea793c44841df8daddabd0123666b394a69457b
IGP20N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Power dissipation: 170W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
38+1.89 EUR
43+1.70 EUR
44+1.63 EUR
47+1.53 EUR
250+1.49 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IGW20N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B364F1E8194FA8&compId=IGW20N60H3-DTE.pdf?ci_sign=029fb8913da8355d7db4e94074a1077f0f592f1f
IGW20N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 170W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
24+3.00 EUR
32+2.26 EUR
34+2.13 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N60H3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4BEE48ED3820&compId=IKB20N60H3.pdf?ci_sign=6e59697a1b11c9314964694537e7c76c6542e9f8
IKB20N60H3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD52D9F6417820&compId=IKB20N60T.pdf?ci_sign=c235205cf7eddca1fd52b37a7c3b186c20f8ddcc
IKB20N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60H3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACF6E42879FE51BF&compId=IKP20N60H3-DTE.pdf?ci_sign=81822baaae1c458e541be05689ce6b6972ffcdff
IKP20N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 31ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A8D07DB193BFE74A&compId=IKP20N60T.pdf?ci_sign=7c0e65ea17092b5cb44f595a48490fa898091448
IKP20N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
27+2.65 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IKW20N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE6F66D4F3B820&compId=IKW20N60H3.pdf?ci_sign=17f202bc94e3ffba54d73940142cc54f9595779a
IKW20N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 28ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.05 EUR
16+4.55 EUR
21+3.47 EUR
22+3.27 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW20N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A8D06C564238274A&compId=IKW20N60T.pdf?ci_sign=446b88dff3d758d9a2f7512499a17ea6b9e28d8b
IKW20N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.62 EUR
24+3.05 EUR
25+2.89 EUR
60+2.86 EUR
120+2.77 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SPA20N60C3 pVersion=0046&contRep=ZT&docId=E1C058D08A5F9CF1A6F5005056AB5A8F&compId=spp20n60c3.pdf?ci_sign=e6782b5ab7a5620fbda75de79daa9ea3abc07fdf
SPA20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.71 EUR
14+5.11 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SPA20N60CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC030A66F7A8143&compId=SPA20N60CFD.pdf?ci_sign=ba37c191af9a9c354ab1361f3a3d77038999c3fd
SPA20N60CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB20N60C3
SPB20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
21+3.43 EUR
23+3.25 EUR
250+3.20 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SPB20N60S5 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58CD214FC83874A&compId=SPB20N60S5.pdf?ci_sign=c10e80218ee233c1423c180589fd11a6a8f52b71
SPB20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0030TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825D2F1A6F5005056AB5A8F&compId=irlml0030pbf.pdf?ci_sign=0967246e14c499dac7fba1009378f5d12f33bab0
IRLML0030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
268+0.27 EUR
404+0.18 EUR
685+0.10 EUR
725+0.10 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IRFR220NTRPBF pVersion=0046&contRep=ZT&docId=E221C119302F95F1A303005056AB0C4F&compId=irfr220npbf.pdf?ci_sign=c9508836b8df0e5004441533b4bc289849090945
IRFR220NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Case: DPAK
Drain-source voltage: 200V
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 1793 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
70+1.04 EUR
190+0.38 EUR
200+0.36 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
BAS1602VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7CC646E270469&compId=BAS1602VH6327XTSA1.pdf?ci_sign=9415141bb43cbdd448b57243d992c4e3a4580712
BAS1602VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 3291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
807+0.09 EUR
893+0.08 EUR
1064+0.07 EUR
1183+0.06 EUR
1299+0.06 EUR
1374+0.05 EUR
3000+0.05 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BAS1603WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7D630FF0A8469&compId=BAS1603WE6327HTSA1.pdf?ci_sign=501120ed8e0387d0f68781981619815a428c2884
BAS1603WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
410+0.17 EUR
895+0.08 EUR
995+0.07 EUR
1200+0.06 EUR
1270+0.06 EUR
Mindestbestellmenge: 410
Im Einkaufswagen  Stück im Wert von  UAH
BAS16E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7D630FF0A8469&compId=BAS1603WE6327HTSA1.pdf?ci_sign=501120ed8e0387d0f68781981619815a428c2884
BAS16E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 13571 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
777+0.09 EUR
893+0.08 EUR
1087+0.07 EUR
1211+0.06 EUR
1306+0.06 EUR
1484+0.05 EUR
1573+0.05 EUR
Mindestbestellmenge: 777
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48NPBF pVersion=0046&contRep=ZT&docId=E1C04E7D505604F1A6F5005056AB5A8F&compId=irfz48n.pdf?ci_sign=0785d6983816823690d6245fa8826bf83d081d69
IRFZ48NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
83+0.87 EUR
135+0.53 EUR
143+0.50 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48NSTRLPBF pVersion=0046&contRep=ZT&docId=E221CB291B1DFEF1A303005056AB0C4F&compId=irfz48nspbf.pdf?ci_sign=1d8f5a5fcf7cd5af31a38e0f4a5d2613bced05ee
IRFZ48NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7545PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6A1ACCC4AE1EC&compId=irfb7545pbf.pdf?ci_sign=9c5379c9bead593a424c708dc2ae499c899ed378
IRFB7545PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
114+0.63 EUR
144+0.50 EUR
152+0.47 EUR
500+0.45 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
IRLML5203TRPBF pVersion=0046&contRep=ZT&docId=E2227BD7369177F1A303005056AB0C4F&compId=irlml5203pbf.pdf?ci_sign=82ead9814132c2f6db5f76bc74feab6bb4ea01e5
IRLML5203TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
auf Bestellung 705 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
201+0.36 EUR
291+0.25 EUR
343+0.21 EUR
650+0.11 EUR
685+0.10 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
BC857AE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783DF60124ED30259&compId=BC857B-DTE.pdf?ci_sign=ba25cefced3e9fb3bec3567afbe372972cd47a0a
BC857AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1441+0.05 EUR
1557+0.05 EUR
Mindestbestellmenge: 1441
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z34NPBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B680F1A6F5005056AB5A8F&compId=irf9z34n.pdf?ci_sign=d4acb9fe5df062d3e293b8568a174e680d014d81
IRF9Z34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
109+0.66 EUR
125+0.57 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6BF0AC93A8A18&compId=IKP15N65F5.pdf?ci_sign=813dd2687d113f2ce86cd4f9b1d438357d641c10
IKP15N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Collector current: 18A
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H5
Turn-off time: 166ns
Turn-on time: 24ns
Collector-emitter voltage: 650V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2104PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD865162496F5EA&compId=IR2104PBF.pdf?ci_sign=c171abf43ff720e30432806290c08be689b8dee1
IR2104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.09 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IR2104SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD33E1F1A6F5005056AB5A8F&compId=ir2104.pdf?ci_sign=4359ee0159dafd1f6920f459f6db4eb8bb7e1e9d
IR2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
41+1.74 EUR
45+1.60 EUR
48+1.50 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IR2104STRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD865162496F5EA&compId=IR2104PBF.pdf?ci_sign=c171abf43ff720e30432806290c08be689b8dee1
IR2104STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 1909 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.80 EUR
62+1.17 EUR
83+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31590A7878FA8&compId=IGB50N60T-DTE.pdf?ci_sign=60db27e8dc1b6cad47cbf90a3606a38d6dfebaed
IGB50N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Power dissipation: 333W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP50N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B359F284B34FA8&compId=IGP50N60T-DTE.pdf?ci_sign=2b05383ced2cbae508f7c97aac42cd7ba476fbe1
IGP50N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE69DD2658122D64FA8&compId=IGW50N60H3-DTE.pdf?ci_sign=897e7d7b1107c9d184468cce9d50b26eda5e5dbb
IGW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.99 EUR
17+4.28 EUR
18+4.05 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37718FAED8FA8&compId=IGW50N60T-DTE.pdf?ci_sign=8e9d2e131bdbda93bfe3ca4fb8f78e7815e61628
IGW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.52 EUR
17+4.23 EUR
18+3.99 EUR
30+3.98 EUR
120+3.85 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5CCBF5761D3D7&compId=IKW50N60DTP.pdf?ci_sign=94fc3287d74be6840256ba5010a252d8c5963f49
IKW50N60DTPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Turn-on time: 50ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.60 EUR
29+2.47 EUR
31+2.33 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0CEE5938C0745&compId=IKW50N60H3.pdf?ci_sign=d334792eef4676a4984a2ca8adefbaef89e3863e
IKW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 54ns
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.61 EUR
15+4.83 EUR
120+4.76 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B597008ABEE131BF&compId=IKW50N60T-dte.pdf?ci_sign=4bece27f1d2991d109d3770530589bb18075b091
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.84 EUR
13+5.58 EUR
30+5.46 EUR
120+5.36 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA9B2D8CF93820&compId=AIKW50N60CT.pdf?ci_sign=b92086039af5d2b2a4bca0bef06f9bcd896bfdc7
AIKW50N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 55ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5
IKFW50N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Turn-on time: 60ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE1A560ED2F820&compId=IKFW50N60ET.pdf?ci_sign=1dc63477d7ea1d12e4dda3141dab1803566a6fe8
IKFW50N60ETXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Turn-on time: 61ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S409ATMA2 INFNS13307-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L08ATMA2 INFNS14103-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L12ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA46AFD6105A143&compId=IPD50N06S4L12.pdf?ci_sign=c6c9560e346518f86140ea30fd599c19ca15cdc8
IPD50N06S4L12ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 2047 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.30 EUR
82+0.88 EUR
89+0.81 EUR
91+0.79 EUR
94+0.77 EUR
100+0.74 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC2F9789B411C&compId=IPD350N06LG-DTE.pdf?ci_sign=87fae814c5bc9e76dd51c3647c62fa14ffec9864
IPD350N06LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 1555 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.50 EUR
75+0.96 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRF7313TRPBF description pVersion=0046&contRep=ZT&docId=E2219D76070127F1A303005056AB0C4F&compId=irf7313pbf.pdf?ci_sign=e7bd49b91212a50639a11cd438aa89f6c9fcf565
IRF7313TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7341QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D743AF1A6F5005056AB5A8F&compId=auirf7341q.pdf?ci_sign=6bea7d23124b569e130ea828412fdc252f1025d0
AUIRF7341QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928F8980DED1CC&compId=BSS84PWH6327XTSA1-dte.pdf?ci_sign=2d44725811f51a5fc8637fd959b8cb9ee3677c90
BSS84PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 6167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
556+0.13 EUR
711+0.10 EUR
794+0.09 EUR
1534+0.05 EUR
1624+0.04 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4AFA32A35D1CC&compId=IKW25N120H3-DTE.pdf?ci_sign=a514e131da34fbe6b92466a983691a3367199936
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.11 EUR
12+5.99 EUR
13+5.66 EUR
60+5.48 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NPBF pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF9C48B972F760D4&compId=IRFZ44Npbf.pdf?ci_sign=a0367694f4d7ca96e6cad6a8227012049aa7c754
IRFZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
On-state resistance: 17.5mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NSTRLPBF pVersion=0046&contRep=ZT&docId=E221CA9332C586F1A303005056AB0C4F&compId=irfz44nspbf.pdf?ci_sign=3fb2237c544e3a8e905dcabfe68cc494319ca22b
IRFZ44NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW60N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37B44CF164FA8&compId=IGW60N60H3-DTE.pdf?ci_sign=fb021fd10fc060d67c3fe8c683c021df2d088a5e
IGW60N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector current: 60A
Pulsed collector current: 180A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IKW60N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2CB8CEA107820&compId=IKW60N60H3.pdf?ci_sign=0a1ce94180d85bd783cd0fa622d1eaeca2db3871
IKW60N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector current: 60A
Pulsed collector current: 180A
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.27 EUR
11+6.69 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2445 2446 2447 2448 2449 2450 2451 2452 2453 2454 2455 2490 2496  [ Nächste Seite >> ]