Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149735) > Seite 2450 nach 2496
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IPP089N15NM6AKSA1 | Infineon Technologies | IPP089N15NM6AKSA1 |
Produkt ist nicht verfügbar |
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T3401N33TOFS20XPSA1 | Infineon Technologies | SP000091136 |
Produkt ist nicht verfügbar |
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BSL215C H6327 | Infineon Technologies |
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Produkt ist nicht verfügbar |
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IGB20N60H3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK Type of transistor: IGBT Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A |
auf Bestellung 972 Stücke: Lieferzeit 14-21 Tag (e) |
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IGP20N60H3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3 Type of transistor: IGBT Power dissipation: 170W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW20N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 170W Case: TO247-3 Mounting: THT Kind of package: tube Manufacturer series: H3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB20N60H3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 85W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 0.12µC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 80A Turn-on time: 36ns Turn-off time: 205ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IKB20N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 166W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 0.12µC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 28A Pulsed collector current: 60A Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKP20N60H3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 85W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 0.12µC Manufacturer series: H3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 80A Turn-on time: 31ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKP20N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3 Type of transistor: IGBT Power dissipation: 166W Case: TO220-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Turn-on time: 36ns Turn-off time: 299ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW20N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 85W Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.12µC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 80A Turn-on time: 28ns Turn-off time: 205ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW20N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 166W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 36ns Turn-off time: 299ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA20N60C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 34.5W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA20N60CFDXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 35W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SPB20N60C3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.7A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 811 Stücke: Lieferzeit 14-21 Tag (e) |
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SPB20N60S5 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRLML0030TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 2139 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR220NTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK Case: DPAK Drain-source voltage: 200V Drain current: 5A Type of transistor: N-MOSFET Power dissipation: 43W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Mounting: SMD |
auf Bestellung 1793 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS1602VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SC79 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
auf Bestellung 3291 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS1603WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
auf Bestellung 2735 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
auf Bestellung 13571 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ48NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 64A Power dissipation: 94W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ48NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 64A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRFB7545PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 95A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET |
auf Bestellung 521 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML5203TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: reel |
auf Bestellung 705 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857AE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 1557 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9Z34NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -19A Power dissipation: 68W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 23.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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IKP15N65F5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO220-3 Mounting: THT Kind of package: tube Power dissipation: 52.5W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 38nC Manufacturer series: H5 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 18A Pulsed collector current: 45A Turn-on time: 24ns Turn-off time: 166ns |
Produkt ist nicht verfügbar |
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IR2104PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -270...130mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2104SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2104STRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
auf Bestellung 1909 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB50N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK Type of transistor: IGBT Power dissipation: 333W Case: D2PAK Mounting: SMD Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 50A |
Produkt ist nicht verfügbar |
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IGP50N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3 Type of transistor: IGBT Power dissipation: 333W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGW50N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 333W Case: TO247-3 Mounting: THT Kind of package: tube Manufacturer series: H3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW50N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 333W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 64A Pulsed collector current: 150A |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N60DTPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 159.6W Case: TO247-3 Mounting: THT Gate charge: 249nC Kind of package: tube Turn-off time: 233ns Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 61A Pulsed collector current: 150A Turn-on time: 50ns |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 167W Case: TO247-3 Mounting: THT Gate charge: 315nC Kind of package: tube Turn-off time: 297ns Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Turn-on time: 54ns |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 333W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 50A |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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AIKW50N60CTXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 333W Case: TO247-3 Mounting: THT Gate charge: 310nC Kind of package: tube Turn-off time: 328ns Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 150A Turn-on time: 55ns |
Produkt ist nicht verfügbar |
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IKFW50N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 95W Case: PG-TO247-3-AI Mounting: THT Gate charge: 160nC Kind of package: tube Turn-off time: 192ns Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 37A Pulsed collector current: 120A Turn-on time: 60ns |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IKFW50N60ETXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 120W Case: PG-TO247-3-AI Mounting: THT Gate charge: 290nC Kind of package: tube Turn-off time: 332ns Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 59A Pulsed collector current: 150A Turn-on time: 61ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
IPD50N06S409ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IPD50N06S4L08ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±16V On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPD50N06S4L12ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 50W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 12mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhancement |
auf Bestellung 2047 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD350N06LGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 116A Power dissipation: 68W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhancement |
auf Bestellung 1555 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7313TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AUIRF7341QTR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 55V Drain current: 5.1A Case: SO8 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 65mΩ Power dissipation: 2.4W Gate charge: 29nC Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BSS84PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.15A Power dissipation: 0.3W Case: PG-SOT-323 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Gate charge: 0.37nC Technology: SIPMOS™ |
auf Bestellung 6167 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW25N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 115nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 3 Manufacturer series: H3 |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 49A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFZ44NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 49A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGW60N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 416W Case: TO247-3 Mounting: THT Kind of package: tube Manufacturer series: H3 Collector current: 60A Pulsed collector current: 180A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW60N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 416W Case: TO247-3 Mounting: THT Gate charge: 375nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H3 Collector current: 60A Pulsed collector current: 180A Turn-on time: 64ns Turn-off time: 314ns Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IKFW60N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 104W Case: PG-TO247-3-AI Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 44A Pulsed collector current: 150A Turn-on time: 62ns Turn-off time: 189ns Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
IKFW60N60EH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 164W Case: TO247-3 Mounting: THT Gate charge: 290nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 50A Pulsed collector current: 200A Turn-on time: 64ns Turn-off time: 253ns Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRFP9140NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -21A Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 120W Gate charge: 64.7nC Technology: HEXFET® |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Kind of channel: enhancement Technology: HEXFET® Gate charge: 44.7nC Kind of package: tube |
auf Bestellung 568 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
auf Bestellung 369 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL540NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 44mΩ Mounting: THT Gate charge: 49.3nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® |
auf Bestellung 942 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4668PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 130A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V On-state resistance: 9.7mΩ Power dissipation: 520W Gate charge: 161nC Technology: HEXFET® |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP089N15NM6AKSA1 |
Hersteller: Infineon Technologies
IPP089N15NM6AKSA1
IPP089N15NM6AKSA1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
T3401N33TOFS20XPSA1 |
Hersteller: Infineon Technologies
SP000091136
SP000091136
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSL215C H6327 |
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Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 20V 1.5A Automotive AEC-Q101 6-Pin TSOP T/R
Trans MOSFET N/P-CH 20V 1.5A Automotive AEC-Q101 6-Pin TSOP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGB20N60H3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK
Type of transistor: IGBT
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; D2PAK
Type of transistor: IGBT
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.97 EUR |
41+ | 1.76 EUR |
53+ | 1.36 EUR |
57+ | 1.27 EUR |
IGP20N60H3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Power dissipation: 170W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO220-3
Type of transistor: IGBT
Power dissipation: 170W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.13 EUR |
38+ | 1.89 EUR |
43+ | 1.70 EUR |
44+ | 1.63 EUR |
47+ | 1.53 EUR |
250+ | 1.49 EUR |
IGW20N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 170W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 170W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 170W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.35 EUR |
24+ | 3.00 EUR |
32+ | 2.26 EUR |
34+ | 2.13 EUR |
IKB20N60H3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 36ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKB20N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKP20N60H3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 31ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 31ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKP20N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 3.03 EUR |
27+ | 2.65 EUR |
IKW20N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 28ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 28ns
Turn-off time: 205ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.05 EUR |
16+ | 4.55 EUR |
21+ | 3.47 EUR |
22+ | 3.27 EUR |
IKW20N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.62 EUR |
24+ | 3.05 EUR |
25+ | 2.89 EUR |
60+ | 2.86 EUR |
120+ | 2.77 EUR |
SPA20N60C3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.71 EUR |
14+ | 5.11 EUR |
SPA20N60CFDXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPB20N60C3 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.49 EUR |
21+ | 3.43 EUR |
23+ | 3.25 EUR |
250+ | 3.20 EUR |
SPB20N60S5 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLML0030TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2139 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
268+ | 0.27 EUR |
404+ | 0.18 EUR |
685+ | 0.10 EUR |
725+ | 0.10 EUR |
IRFR220NTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Case: DPAK
Drain-source voltage: 200V
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Case: DPAK
Drain-source voltage: 200V
Drain current: 5A
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 1793 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
70+ | 1.04 EUR |
190+ | 0.38 EUR |
200+ | 0.36 EUR |
BAS1602VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 3291 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
625+ | 0.11 EUR |
807+ | 0.09 EUR |
893+ | 0.08 EUR |
1064+ | 0.07 EUR |
1183+ | 0.06 EUR |
1299+ | 0.06 EUR |
1374+ | 0.05 EUR |
3000+ | 0.05 EUR |
BAS1603WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
410+ | 0.17 EUR |
895+ | 0.08 EUR |
995+ | 0.07 EUR |
1200+ | 0.06 EUR |
1270+ | 0.06 EUR |
BAS16E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 13571 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
777+ | 0.09 EUR |
893+ | 0.08 EUR |
1087+ | 0.07 EUR |
1211+ | 0.06 EUR |
1306+ | 0.06 EUR |
1484+ | 0.05 EUR |
1573+ | 0.05 EUR |
IRFZ48NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
83+ | 0.87 EUR |
135+ | 0.53 EUR |
143+ | 0.50 EUR |
IRFZ48NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB7545PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
114+ | 0.63 EUR |
144+ | 0.50 EUR |
152+ | 0.47 EUR |
500+ | 0.45 EUR |
IRLML5203TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
auf Bestellung 705 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
201+ | 0.36 EUR |
291+ | 0.25 EUR |
343+ | 0.21 EUR |
650+ | 0.11 EUR |
685+ | 0.10 EUR |
BC857AE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1557 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1441+ | 0.05 EUR |
1557+ | 0.05 EUR |
IRF9Z34NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.39 EUR |
109+ | 0.66 EUR |
125+ | 0.57 EUR |
IKP15N65F5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 52.5W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 38nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 45A
Turn-on time: 24ns
Turn-off time: 166ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 52.5W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 38nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 45A
Turn-on time: 24ns
Turn-off time: 166ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2104PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.09 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
IR2104SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.85 EUR |
41+ | 1.74 EUR |
46+ | 1.59 EUR |
48+ | 1.50 EUR |
IR2104STRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 1909 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.80 EUR |
62+ | 1.17 EUR |
83+ | 0.87 EUR |
88+ | 0.82 EUR |
IGB50N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Power dissipation: 333W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Power dissipation: 333W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGP50N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW50N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 5.99 EUR |
17+ | 4.28 EUR |
18+ | 4.05 EUR |
IGW50N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.52 EUR |
17+ | 4.23 EUR |
18+ | 3.99 EUR |
30+ | 3.98 EUR |
120+ | 3.85 EUR |
IKW50N60DTPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Turn-on time: 50ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Turn-on time: 50ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.60 EUR |
29+ | 2.47 EUR |
31+ | 2.33 EUR |
IKW50N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 54ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 54ns
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.61 EUR |
15+ | 4.83 EUR |
120+ | 4.76 EUR |
IKW50N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.84 EUR |
13+ | 5.58 EUR |
30+ | 5.46 EUR |
120+ | 5.36 EUR |
AIKW50N60CTXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 55ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 55ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKFW50N60DH3EXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Turn-on time: 60ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Turn-on time: 60ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
IKFW50N60ETXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Turn-on time: 61ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Turn-on time: 61ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50N06S409ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50N06S4L08ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50N06S4L12ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 2047 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.30 EUR |
82+ | 0.88 EUR |
89+ | 0.81 EUR |
91+ | 0.79 EUR |
94+ | 0.77 EUR |
100+ | 0.74 EUR |
IPD350N06LGBTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 1555 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.50 EUR |
75+ | 0.96 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
1000+ | 0.45 EUR |
IRF7313TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7341QTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS84PWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 6167 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
556+ | 0.13 EUR |
711+ | 0.10 EUR |
794+ | 0.09 EUR |
1534+ | 0.05 EUR |
1624+ | 0.04 EUR |
IKW25N120H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.11 EUR |
12+ | 5.99 EUR |
13+ | 5.66 EUR |
60+ | 5.48 EUR |
IRFZ44NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFZ44NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW60N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector current: 60A
Pulsed collector current: 180A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Collector current: 60A
Pulsed collector current: 180A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.94 EUR |
IKW60N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector current: 60A
Pulsed collector current: 180A
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector current: 60A
Pulsed collector current: 180A
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.27 EUR |
11+ | 6.69 EUR |
IKFW60N60DH3EXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 44A
Pulsed collector current: 150A
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 44A
Pulsed collector current: 150A
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKFW60N60EH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP9140NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 120W
Gate charge: 64.7nC
Technology: HEXFET®
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 120W
Gate charge: 64.7nC
Technology: HEXFET®
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.96 EUR |
36+ | 1.99 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
250+ | 1.04 EUR |
IRF640NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 44.7nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 44.7nC
Kind of package: tube
auf Bestellung 568 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.83 EUR |
52+ | 1.38 EUR |
65+ | 1.10 EUR |
120+ | 0.60 EUR |
127+ | 0.56 EUR |
IRF640NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 369 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.07 EUR |
49+ | 1.46 EUR |
114+ | 0.63 EUR |
121+ | 0.59 EUR |
IRL540NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 942 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.73 EUR |
59+ | 1.22 EUR |
123+ | 0.58 EUR |
130+ | 0.55 EUR |
IRFP4668PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Power dissipation: 520W
Gate charge: 161nC
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Power dissipation: 520W
Gate charge: 161nC
Technology: HEXFET®
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.69 EUR |
24+ | 3.09 EUR |
25+ | 2.92 EUR |