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IGW75N65H5XKSA1 IGW75N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB9A3F0AC89820&compId=IGW75N65H5.pdf?ci_sign=86e4907099baaae3cd322374fa086d9863321d24 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 215ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.29 EUR
19+3.79 EUR
21+3.49 EUR
30+3.3 EUR
Mindestbestellmenge: 14
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IGZ75N65H5XKSA1 IGZ75N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B388A040FCAFA8&compId=IGZ75N65H5XKSA1-DTE.pdf?ci_sign=9b8ff2f3fa39c5d9f86e4765ed220908d6a403a3 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 166nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKW75N65EH5XKSA1 IKW75N65EH5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2F3AF72F3F820&compId=IKW75N65EH5.pdf?ci_sign=92ba1a012fb6f2015e7a08b8c44cac70c5ea05cc Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 61ns
Turn-off time: 215ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKW75N65ES5XKSA1 IKW75N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2FA50F9BEF820&compId=IKW75N65ES5.pdf?ci_sign=f17c5f5d53b9ed23579e020b6774d9134f3ac3f1 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 86ns
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
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IKZ75N65EL5XKSA1 IKZ75N65EL5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5905519D753D7&compId=IKZ75N65EL5.pdf?ci_sign=974195b6848179160a1b9261f57f7646ab0e186b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 268W
Case: TO247-4
Mounting: THT
Gate charge: 436nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 143ns
Turn-off time: 325ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKZ75N65ES5XKSA1 IKZ75N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC57EF09C8793D7&compId=IKZ75N65ES5.pdf?ci_sign=44911182ca481715e7b5316763a9fce579f0b12d Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 71ns
Turn-off time: 427ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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SPW35N60CFD SPW35N60CFD INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F7B3559DE33E28&compId=SPW35N60CFD.pdf?ci_sign=f745343adc80ebd46908d5a119ad112816112262 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF540ZPBF IRF540ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B74F1A6F5005056AB5A8F&compId=irf540z.pdf?ci_sign=dc37eeef6533ef9813e70c1f6eb24e960c6946c6 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
98+0.73 EUR
103+0.7 EUR
109+0.66 EUR
114+0.63 EUR
Mindestbestellmenge: 81
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IGW40T120FKSA1 IGW40T120FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFA4BB55332D3D1&compId=IGW40T120.pdf?ci_sign=6d2b9cb6711cb598e9b5b115f856a534ead69852 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.52 EUR
10+7.52 EUR
30+6.76 EUR
Mindestbestellmenge: 9
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IKW40T120FKSA1 IKW40T120FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B8FDEA7B2C616143&compId=IKW40T120FKSA1.pdf?ci_sign=710142ea5a638ff69a833db040662bf28761863b Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
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IRF9530NSTRLPBF IRF9530NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B182AD9381F1A303005056AB0C4F&compId=irf9530nspbf.pdf?ci_sign=a436f2e5acc92f8ab7878b6b87b589830d094258 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFL014NTRPBF IRFL014NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BD5B487D8FF1A303005056AB0C4F&compId=irfl014npbf.pdf?ci_sign=b06b941a782485ee8a69673d6ed3d787b81bf574 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGB10N60TATMA1 IGB10N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B30CC332344FA8&compId=IGB10N60T-DTE.pdf?ci_sign=90664c525528d16e0bd90c7ad7dc5eade2a10283 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 1130 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
75+0.96 EUR
100+0.9 EUR
250+0.82 EUR
500+0.79 EUR
Mindestbestellmenge: 62
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IGP10N60TXKSA1 IGP10N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B318DF300C4FA8&compId=IGP10N60T-DTE.pdf?ci_sign=f59911f7c955bf848f9d1c58b355b7bf48440da2 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
54+1.33 EUR
57+1.26 EUR
Mindestbestellmenge: 41
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IKA10N60TXKSA1 IKA10N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD0C97D3F67820&compId=IKA10N60T.pdf?ci_sign=fadea912e4a2c8f589f65f7cdedf1af4db1bc744 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Produkt ist nicht verfügbar
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IKB10N60TATMA1 IKB10N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD3C93FDBDF820&compId=IKB10N60T.pdf?ci_sign=ac3f6735529e5b82d20ec8c5b3cf138128615c0e Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.27 EUR
41+1.77 EUR
48+1.52 EUR
Mindestbestellmenge: 32
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IKD10N60RATMA1 IKD10N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE350DCA63820&compId=IKD10N60R.pdf?ci_sign=ecb612de43b087b36cf1e0a347077a0e414f088b Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IKD10N60RFATMA1 IKD10N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE9EBA7B4D820&compId=IKD10N60RF.pdf?ci_sign=ff07afe3ccf9dab31c2c7d5cd2c6e1307060f858 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRLU024NPBF IRLU024NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227DACF5C79FF1A303005056AB0C4F&compId=irlr024npbf.pdf?ci_sign=3af2f11bc76fdb545611693e306e0c4c895c7f1f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
171+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 84
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PVG612 PVG612 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C055BB1D2B1EF1A6F5005056AB5A8F&compId=pvg612.pdf?ci_sign=844dea53a3a719b09f98495db57b0c504b20629c description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Manufacturer series: PVG612
Mounting: THT
Contacts configuration: SPST-NO
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
On-state resistance: 0.15Ω
Case: DIP6
Max. operating current: 2.4A
Relay variant: MOSFET
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.61 EUR
10+7.68 EUR
11+6.99 EUR
12+6.26 EUR
Mindestbestellmenge: 9
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PVG612ASPBF PVG612ASPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C01432D75681EC&compId=PVG612ASPBF.pdf?ci_sign=1eae45f1548871cd056215af4d35e6ac06cf940e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A
Case: DIP6
Mounting: SMT
Contacts configuration: SPST-NO
Relay variant: MOSFET
Type of relay: solid state
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 3.5ms
Control current: 5...25mA
On-state resistance: 0.1Ω
Max. operating current: 4A
Control voltage: 1.2V DC
Manufacturer series: PVG612
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
4+23.29 EUR
5+20.69 EUR
25+18.1 EUR
100+15.53 EUR
Mindestbestellmenge: 4
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PVG612S PVG612S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED38DFF40ADB28329E4&compId=PVG612S.PDF?ci_sign=2b01806b51665ad59e0c5ed73c06ae8713c4d143 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Manufacturer series: PVG612
Mounting: SMT
Contacts configuration: SPST-NO
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
On-state resistance: 0.15Ω
Case: DIP6
Max. operating current: 2.4A
Relay variant: MOSFET
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.08 EUR
10+7.15 EUR
Mindestbestellmenge: 9
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IRFP4110PBF IRFP4110PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB13F1A6F5005056AB5A8F&compId=irfp4110pbf.pdf?ci_sign=6f5917c718a71c13d636e4dbfc23bbd396deb66b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Gate charge: 150nC
Technology: HEXFET®
Power dissipation: 370W
Produkt ist nicht verfügbar
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BFR93AE6327 BFR93AE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C30483FF811C&compId=BFR93AE6327-dte.pdf?ci_sign=4976f0bcbdde1e8f6f5441178f01c8ea32474540 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 9274 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
302+0.24 EUR
341+0.21 EUR
394+0.18 EUR
439+0.16 EUR
472+0.15 EUR
521+0.14 EUR
544+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 250
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BFR93AWH6327 BFR93AWH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C52D96F5811C&compId=BFR93AWH6327-dte.pdf?ci_sign=f5dad9dcde5007a2b1c25553281c2232de027f10 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 12601 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
705+0.1 EUR
844+0.085 EUR
879+0.081 EUR
1000+0.073 EUR
3000+0.069 EUR
Mindestbestellmenge: 455
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IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFA6F1A1E1D5EA&compId=IRFZ44ZSTRRPBF.pdf?ci_sign=6370c9272db105c61280a6fd399b967cc13fdd2d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR024NTRPBF IRLR024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227DACF5C79FF1A303005056AB0C4F&compId=irlr024npbf.pdf?ci_sign=3af2f11bc76fdb545611693e306e0c4c895c7f1f description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 2532 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
150+0.48 EUR
186+0.39 EUR
203+0.35 EUR
500+0.29 EUR
1000+0.27 EUR
2000+0.25 EUR
Mindestbestellmenge: 105
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IRLML2030TRPBF IRLML2030TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825E7F1A6F5005056AB5A8F&compId=irlml2030pbf.pdf?ci_sign=a1998ead6eaa1089a0ac43972a6165773eca35a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 7920 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
256+0.28 EUR
302+0.24 EUR
363+0.2 EUR
554+0.13 EUR
759+0.094 EUR
1000+0.086 EUR
3000+0.077 EUR
6000+0.073 EUR
Mindestbestellmenge: 200
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IRLML2060TRPBF IRLML2060TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825EEF1A6F5005056AB5A8F&compId=irlml2060pbf.pdf?ci_sign=8f6b20a635982558b5faa81751781baa759c75d9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
247+0.29 EUR
360+0.2 EUR
424+0.17 EUR
610+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 173
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IRLML2246TRPBF IRLML2246TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227BA0DC5F07F1A303005056AB0C4F&compId=irlml2246pbf.pdf?ci_sign=9676557545f801f7a2f3db0a86594d388331cd8f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 816 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
368+0.19 EUR
417+0.17 EUR
610+0.12 EUR
794+0.09 EUR
Mindestbestellmenge: 295
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IRLML2502TRPBF IRLML2502TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1169C8AFE75EA&compId=IRLML2502TRPBF.pdf?ci_sign=ee943fbc222d20849d4363e63ac713ce2afa2b4a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
225+0.32 EUR
260+0.27 EUR
Mindestbestellmenge: 162
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IRLML2803TRPBF IRLML2803TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582603F1A6F5005056AB5A8F&compId=irlml2803.pdf?ci_sign=068837b0a7fb98cbe47bd8f4ee1d75009a4dd519 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 0.3Ω
auf Bestellung 5969 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
321+0.22 EUR
363+0.2 EUR
551+0.13 EUR
642+0.11 EUR
714+0.1 EUR
1000+0.091 EUR
3000+0.079 EUR
Mindestbestellmenge: 264
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IRF2807PBF IRF2807PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABB6F1A6F5005056AB5A8F&compId=irf2807.pdf?ci_sign=c4365dc6896733f25b90727d104b25bdc69a3b88 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 106.7nC
Kind of package: tube
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
40+1.8 EUR
47+1.53 EUR
55+1.32 EUR
100+1.1 EUR
250+0.92 EUR
Mindestbestellmenge: 35
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IRF2807STRLPBF IRF2807STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5FB4B34E28F1A303005056AB0C4F&compId=irf2807spbf.pdf?ci_sign=1081ba06bde1009271e5798be8423f83ccc6acf8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.67 EUR
42+1.74 EUR
51+1.41 EUR
100+1.27 EUR
Mindestbestellmenge: 27
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IRF2807STRRPBF IRF2807STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5FB4B34E28F1A303005056AB0C4F&compId=irf2807spbf.pdf?ci_sign=1081ba06bde1009271e5798be8423f83ccc6acf8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807ZPBF IRF2807ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABC4F1A6F5005056AB5A8F&compId=irf2807z.pdf?ci_sign=f84c3cab78883006c4b1662defbed8d4661697b0 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 71nC
Kind of package: tube
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.73 EUR
38+1.92 EUR
43+1.69 EUR
Mindestbestellmenge: 27
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IR21844SPBF IR21844SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.45 EUR
18+4.02 EUR
50+3.55 EUR
55+3.53 EUR
110+3.32 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IR21844STRPBF IR21844STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2184PBF IR2184PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.1 EUR
29+2.5 EUR
31+2.33 EUR
50+2.25 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IR2184SPBF IR2184SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.45 EUR
23+3.25 EUR
26+2.85 EUR
29+2.52 EUR
50+2.49 EUR
Mindestbestellmenge: 21
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IR2184STRPBF IR2184STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 2398 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.8 EUR
29+2.53 EUR
31+2.35 EUR
32+2.25 EUR
100+2 EUR
250+1.87 EUR
Mindestbestellmenge: 26
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BAT60AE6327HTSA1 BAT60AE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EFEC4D26E1A4FA8&compId=BAT60AE6327-DTE.pdf?ci_sign=5452283d909e53b8bdbfacd006cc97d8049e2534 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 5402 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
338+0.21 EUR
382+0.19 EUR
459+0.16 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 179
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BAT60BE6327HTSA1 BAT60BE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E00C6D1B8DA469&compId=BAT60BE6327HTSA1.pdf?ci_sign=441728a00897fed1bb4048a2445b2375ec671b6c Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
291+0.25 EUR
391+0.18 EUR
443+0.16 EUR
650+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 218
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BTS452R BTS452R INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE604B660BACFA8&compId=BTS452R-DTE.pdf?ci_sign=b267e80bbe61e6651960ff2d69f4b2da6e19fb4a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 0.2Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Output voltage: 62V
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.9 EUR
43+1.7 EUR
45+1.62 EUR
250+1.57 EUR
500+1.54 EUR
Mindestbestellmenge: 38
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BAV70SH6327XTSA1 BAV70SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8091CB2022469&compId=BAV70E6327HTSA1.pdf?ci_sign=9b9bfc3341cea4517c5662670f21967f8db07450 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
511+0.14 EUR
828+0.086 EUR
930+0.077 EUR
1000+0.073 EUR
Mindestbestellmenge: 511
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BAV99SH6327XTSA1 BAV99SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB816C40A9AA469&compId=BAV99SH6327XTSA1.pdf?ci_sign=7841fb4160d2a365fb52354be87bec42fd0eebfe Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 3126 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
410+0.17 EUR
470+0.15 EUR
552+0.13 EUR
697+0.1 EUR
1000+0.091 EUR
3000+0.075 EUR
Mindestbestellmenge: 358
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IRS2092STRPBF IRS2092STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE991B35094D5D3F8BF&compId=IRS2092.pdf?ci_sign=d30561b8f2167b835e01440d97d321cfe7659908 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 1287 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.35 EUR
29+2.52 EUR
31+2.35 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRF7413ZTRPBF IRF7413ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A28B5E97DEF1A303005056AB0C4F&compId=irf7413zpbf.pdf?ci_sign=0a0941c7081f3ad0564ea06b4ffff92ce75b9dcf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 3785 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
112+0.64 EUR
148+0.48 EUR
218+0.33 EUR
231+0.31 EUR
1000+0.3 EUR
Mindestbestellmenge: 84
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IRS20752LTRPBF IRS20752LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCEF05BD07A745&compId=IRS20752ltrpbf.pdf?ci_sign=ef2d046c3868bd8f5a439bd44dd071464cf6744b Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Turn-on time: 225ns
Turn-off time: 255ns
Number of channels: 1
Supply voltage: 10...18V DC
Voltage class: 200V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Operating temperature: -40...125°C
Output current: -240...160mA
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)
79+0.92 EUR
88+0.82 EUR
94+0.76 EUR
114+0.63 EUR
121+0.59 EUR
1000+0.57 EUR
Mindestbestellmenge: 79
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IRFP064NPBF IRFP064NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA9CF1A6F5005056AB5A8F&compId=irfp064n.pdf?ci_sign=24f2d5c6c21e5e1e08dcd4962b305485e88e41fa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.76 EUR
31+2.35 EUR
35+2.1 EUR
37+1.96 EUR
40+1.8 EUR
100+1.44 EUR
400+1.23 EUR
500+1.2 EUR
Mindestbestellmenge: 26
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IRFP3206PBF IRFP3206PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAE2F1A6F5005056AB5A8F&compId=irfp3206pbf.pdf?ci_sign=2ef9fa9035d9ed3b666b2138b0e0fedc28184ff0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.59 EUR
25+2.86 EUR
31+2.33 EUR
50+2 EUR
100+1.82 EUR
125+1.77 EUR
Mindestbestellmenge: 20
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IRLML5103TRPBF IRLML5103TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227BBBCDDD51F1A303005056AB0C4F&compId=irlml5103pbf.pdf?ci_sign=d05fc47b1999adccea3e17a03d7050a4a06178d1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
142+0.5 EUR
Mindestbestellmenge: 142
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IRF3415PBF IRF3415PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AC26F1A6F5005056AB5A8F&compId=irf3415.pdf?ci_sign=6557a603b03ca9e53218ae6af91344f121c3305f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 133.3nC
On-state resistance: 42mΩ
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
50+1.44 EUR
57+1.26 EUR
100+1.19 EUR
250+1.13 EUR
Mindestbestellmenge: 36
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IRF3415STRLPBF IRF3415STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6077C01015F1A303005056AB0C4F&compId=irf3415spbf.pdf?ci_sign=31c310c17ce697aea79e1cb7cb67885503cefcfc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP150NPBF IRFP150NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAAAF1A6F5005056AB5A8F&compId=irfp150n.pdf?ci_sign=3d5f4181bac72740c14a3465f646a761c7e9dbee description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.2 EUR
41+1.74 EUR
70+1.03 EUR
74+0.97 EUR
Mindestbestellmenge: 33
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IRFP054NPBF IRFP054NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA95F1A6F5005056AB5A8F&compId=irfp054n.pdf?ci_sign=bcd46d929bd827ee9a9c3a41dc89ce2d51391be2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.1 EUR
28+2.63 EUR
33+2.2 EUR
50+1.89 EUR
100+1.67 EUR
Mindestbestellmenge: 24
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BCP5216H6327XTSA1 BCP5216H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5BB543851E469&compId=BCP5216H6327XTSA1.pdf?ci_sign=32661be25e0eb08e39efe4bf55c87c5ce197e855 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 125MHz
Produkt ist nicht verfügbar
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ICE3A2065ELJFKLA1 ICE3A2065ELJFKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC193F4FA82D3D7&compId=ICE3A2065ELJ.pdf?ci_sign=3990ab0fbb34ff3915c4f3824fd7bec35a4aa8f9 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
Output current: 10.3A
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
Mindestbestellmenge: 18
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ICE3AR0680JZXKLA1
+1
 		ICE3AR0680JZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC197E0F7F093D7&compId=ICE3AR0680JZ.pdf?ci_sign=e5a5a2a41e0d97336de868e16e9987b775cba6af Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Mounting: THT
Power: 82/52W
Operating temperature: -25...130°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...75%
Number of channels: 1
Output current: 20A
Operating voltage: 10.5...25V DC
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 0.1MHz
Case: DIP7
Topology: flyback
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
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SPA11N60C3XKSA1 INFINEON TECHNOLOGIES SPx11N60C3%20%28E8185%29.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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IGW75N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB9A3F0AC89820&compId=IGW75N65H5.pdf?ci_sign=86e4907099baaae3cd322374fa086d9863321d24
IGW75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 215ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.29 EUR
19+3.79 EUR
21+3.49 EUR
30+3.3 EUR
Mindestbestellmenge: 14
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IGZ75N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B388A040FCAFA8&compId=IGZ75N65H5XKSA1-DTE.pdf?ci_sign=9b8ff2f3fa39c5d9f86e4765ed220908d6a403a3
IGZ75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 166nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKW75N65EH5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2F3AF72F3F820&compId=IKW75N65EH5.pdf?ci_sign=92ba1a012fb6f2015e7a08b8c44cac70c5ea05cc
IKW75N65EH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 61ns
Turn-off time: 215ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKW75N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2FA50F9BEF820&compId=IKW75N65ES5.pdf?ci_sign=f17c5f5d53b9ed23579e020b6774d9134f3ac3f1
IKW75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 86ns
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IKZ75N65EL5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5905519D753D7&compId=IKZ75N65EL5.pdf?ci_sign=974195b6848179160a1b9261f57f7646ab0e186b
IKZ75N65EL5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 268W
Case: TO247-4
Mounting: THT
Gate charge: 436nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 143ns
Turn-off time: 325ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKZ75N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC57EF09C8793D7&compId=IKZ75N65ES5.pdf?ci_sign=44911182ca481715e7b5316763a9fce579f0b12d
IKZ75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 71ns
Turn-off time: 427ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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SPW35N60CFD pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F7B3559DE33E28&compId=SPW35N60CFD.pdf?ci_sign=f745343adc80ebd46908d5a119ad112816112262
SPW35N60CFD
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF540ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7B74F1A6F5005056AB5A8F&compId=irf540z.pdf?ci_sign=dc37eeef6533ef9813e70c1f6eb24e960c6946c6
IRF540ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
98+0.73 EUR
103+0.7 EUR
109+0.66 EUR
114+0.63 EUR
Mindestbestellmenge: 81
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IGW40T120FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFA4BB55332D3D1&compId=IGW40T120.pdf?ci_sign=6d2b9cb6711cb598e9b5b115f856a534ead69852
IGW40T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.52 EUR
10+7.52 EUR
30+6.76 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IKW40T120FKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B8FDEA7B2C616143&compId=IKW40T120FKSA1.pdf?ci_sign=710142ea5a638ff69a833db040662bf28761863b
IKW40T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRF9530NSTRLPBF pVersion=0046&contRep=ZT&docId=E221B182AD9381F1A303005056AB0C4F&compId=irf9530nspbf.pdf?ci_sign=a436f2e5acc92f8ab7878b6b87b589830d094258
IRF9530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFL014NTRPBF description pVersion=0046&contRep=ZT&docId=E221BD5B487D8FF1A303005056AB0C4F&compId=irfl014npbf.pdf?ci_sign=b06b941a782485ee8a69673d6ed3d787b81bf574
IRFL014NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGB10N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B30CC332344FA8&compId=IGB10N60T-DTE.pdf?ci_sign=90664c525528d16e0bd90c7ad7dc5eade2a10283
IGB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 1130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
75+0.96 EUR
100+0.9 EUR
250+0.82 EUR
500+0.79 EUR
Mindestbestellmenge: 62
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IGP10N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B318DF300C4FA8&compId=IGP10N60T-DTE.pdf?ci_sign=f59911f7c955bf848f9d1c58b355b7bf48440da2
IGP10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
54+1.33 EUR
57+1.26 EUR
Mindestbestellmenge: 41
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IKA10N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD0C97D3F67820&compId=IKA10N60T.pdf?ci_sign=fadea912e4a2c8f589f65f7cdedf1af4db1bc744
IKA10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB10N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD3C93FDBDF820&compId=IKB10N60T.pdf?ci_sign=ac3f6735529e5b82d20ec8c5b3cf138128615c0e
IKB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
41+1.77 EUR
48+1.52 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE350DCA63820&compId=IKD10N60R.pdf?ci_sign=ecb612de43b087b36cf1e0a347077a0e414f088b
IKD10N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE9EBA7B4D820&compId=IKD10N60RF.pdf?ci_sign=ff07afe3ccf9dab31c2c7d5cd2c6e1307060f858
IKD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU024NPBF description pVersion=0046&contRep=ZT&docId=E2227DACF5C79FF1A303005056AB0C4F&compId=irlr024npbf.pdf?ci_sign=3af2f11bc76fdb545611693e306e0c4c895c7f1f
IRLU024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
171+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
PVG612 description pVersion=0046&contRep=ZT&docId=E1C055BB1D2B1EF1A6F5005056AB5A8F&compId=pvg612.pdf?ci_sign=844dea53a3a719b09f98495db57b0c504b20629c
PVG612
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Manufacturer series: PVG612
Mounting: THT
Contacts configuration: SPST-NO
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
On-state resistance: 0.15Ω
Case: DIP6
Max. operating current: 2.4A
Relay variant: MOSFET
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.61 EUR
10+7.68 EUR
11+6.99 EUR
12+6.26 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PVG612ASPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C01432D75681EC&compId=PVG612ASPBF.pdf?ci_sign=1eae45f1548871cd056215af4d35e6ac06cf940e
PVG612ASPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A
Case: DIP6
Mounting: SMT
Contacts configuration: SPST-NO
Relay variant: MOSFET
Type of relay: solid state
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 3.5ms
Control current: 5...25mA
On-state resistance: 0.1Ω
Max. operating current: 4A
Control voltage: 1.2V DC
Manufacturer series: PVG612
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+23.29 EUR
5+20.69 EUR
25+18.1 EUR
100+15.53 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PVG612S description pVersion=0046&contRep=ZT&docId=005056AB752F1ED38DFF40ADB28329E4&compId=PVG612S.PDF?ci_sign=2b01806b51665ad59e0c5ed73c06ae8713c4d143
PVG612S
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Manufacturer series: PVG612
Mounting: SMT
Contacts configuration: SPST-NO
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
On-state resistance: 0.15Ω
Case: DIP6
Max. operating current: 2.4A
Relay variant: MOSFET
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.08 EUR
10+7.15 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4110PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB13F1A6F5005056AB5A8F&compId=irfp4110pbf.pdf?ci_sign=6f5917c718a71c13d636e4dbfc23bbd396deb66b
IRFP4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Gate charge: 150nC
Technology: HEXFET®
Power dissipation: 370W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR93AE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C30483FF811C&compId=BFR93AE6327-dte.pdf?ci_sign=4976f0bcbdde1e8f6f5441178f01c8ea32474540
BFR93AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 9274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
302+0.24 EUR
341+0.21 EUR
394+0.18 EUR
439+0.16 EUR
472+0.15 EUR
521+0.14 EUR
544+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BFR93AWH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C52D96F5811C&compId=BFR93AWH6327-dte.pdf?ci_sign=f5dad9dcde5007a2b1c25553281c2232de027f10
BFR93AWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 12601 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
705+0.1 EUR
844+0.085 EUR
879+0.081 EUR
1000+0.073 EUR
3000+0.069 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44ZSTRRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFA6F1A1E1D5EA&compId=IRFZ44ZSTRRPBF.pdf?ci_sign=6370c9272db105c61280a6fd399b967cc13fdd2d
IRFZ44ZSTRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR024NTRPBF description pVersion=0046&contRep=ZT&docId=E2227DACF5C79FF1A303005056AB0C4F&compId=irlr024npbf.pdf?ci_sign=3af2f11bc76fdb545611693e306e0c4c895c7f1f
IRLR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 2532 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
150+0.48 EUR
186+0.39 EUR
203+0.35 EUR
500+0.29 EUR
1000+0.27 EUR
2000+0.25 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
IRLML2030TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825E7F1A6F5005056AB5A8F&compId=irlml2030pbf.pdf?ci_sign=a1998ead6eaa1089a0ac43972a6165773eca35a9
IRLML2030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 7920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
256+0.28 EUR
302+0.24 EUR
363+0.2 EUR
554+0.13 EUR
759+0.094 EUR
1000+0.086 EUR
3000+0.077 EUR
6000+0.073 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IRLML2060TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825EEF1A6F5005056AB5A8F&compId=irlml2060pbf.pdf?ci_sign=8f6b20a635982558b5faa81751781baa759c75d9
IRLML2060TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
247+0.29 EUR
360+0.2 EUR
424+0.17 EUR
610+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
IRLML2246TRPBF pVersion=0046&contRep=ZT&docId=E2227BA0DC5F07F1A303005056AB0C4F&compId=irlml2246pbf.pdf?ci_sign=9676557545f801f7a2f3db0a86594d388331cd8f
IRLML2246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 816 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
368+0.19 EUR
417+0.17 EUR
610+0.12 EUR
794+0.09 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
IRLML2502TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1169C8AFE75EA&compId=IRLML2502TRPBF.pdf?ci_sign=ee943fbc222d20849d4363e63ac713ce2afa2b4a
IRLML2502TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
225+0.32 EUR
260+0.27 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
IRLML2803TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F582603F1A6F5005056AB5A8F&compId=irlml2803.pdf?ci_sign=068837b0a7fb98cbe47bd8f4ee1d75009a4dd519
IRLML2803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 0.3Ω
auf Bestellung 5969 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
321+0.22 EUR
363+0.2 EUR
551+0.13 EUR
642+0.11 EUR
714+0.1 EUR
1000+0.091 EUR
3000+0.079 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABB6F1A6F5005056AB5A8F&compId=irf2807.pdf?ci_sign=c4365dc6896733f25b90727d104b25bdc69a3b88
IRF2807PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 106.7nC
Kind of package: tube
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
40+1.8 EUR
47+1.53 EUR
55+1.32 EUR
100+1.1 EUR
250+0.92 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807STRLPBF pVersion=0046&contRep=ZT&docId=E21F5FB4B34E28F1A303005056AB0C4F&compId=irf2807spbf.pdf?ci_sign=1081ba06bde1009271e5798be8423f83ccc6acf8
IRF2807STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
42+1.74 EUR
51+1.41 EUR
100+1.27 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807STRRPBF pVersion=0046&contRep=ZT&docId=E21F5FB4B34E28F1A303005056AB0C4F&compId=irf2807spbf.pdf?ci_sign=1081ba06bde1009271e5798be8423f83ccc6acf8
IRF2807STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABC4F1A6F5005056AB5A8F&compId=irf2807z.pdf?ci_sign=f84c3cab78883006c4b1662defbed8d4661697b0
IRF2807ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 71nC
Kind of package: tube
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
38+1.92 EUR
43+1.69 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IR21844SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.45 EUR
18+4.02 EUR
50+3.55 EUR
55+3.53 EUR
110+3.32 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IR21844STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2184PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
29+2.5 EUR
31+2.33 EUR
50+2.25 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IR2184SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
23+3.25 EUR
26+2.85 EUR
29+2.52 EUR
50+2.49 EUR
Mindestbestellmenge: 21
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IR2184STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8B16EEA5795EA&compId=IR21844SPBF.pdf?ci_sign=debc10ee09be372e9e0df7dfdb6de80894025ee5
IR2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 2398 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
29+2.53 EUR
31+2.35 EUR
32+2.25 EUR
100+2 EUR
250+1.87 EUR
Mindestbestellmenge: 26
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BAT60AE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EFEC4D26E1A4FA8&compId=BAT60AE6327-DTE.pdf?ci_sign=5452283d909e53b8bdbfacd006cc97d8049e2534
BAT60AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 5402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
338+0.21 EUR
382+0.19 EUR
459+0.16 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 179
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BAT60BE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E00C6D1B8DA469&compId=BAT60BE6327HTSA1.pdf?ci_sign=441728a00897fed1bb4048a2445b2375ec671b6c
BAT60BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
291+0.25 EUR
391+0.18 EUR
443+0.16 EUR
650+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 218
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BTS452R pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE604B660BACFA8&compId=BTS452R-DTE.pdf?ci_sign=b267e80bbe61e6651960ff2d69f4b2da6e19fb4a
BTS452R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 0.2Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Output voltage: 62V
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
43+1.7 EUR
45+1.62 EUR
250+1.57 EUR
500+1.54 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BAV70SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8091CB2022469&compId=BAV70E6327HTSA1.pdf?ci_sign=9b9bfc3341cea4517c5662670f21967f8db07450
BAV70SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
511+0.14 EUR
828+0.086 EUR
930+0.077 EUR
1000+0.073 EUR
Mindestbestellmenge: 511
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BAV99SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB816C40A9AA469&compId=BAV99SH6327XTSA1.pdf?ci_sign=7841fb4160d2a365fb52354be87bec42fd0eebfe
BAV99SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 3126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
410+0.17 EUR
470+0.15 EUR
552+0.13 EUR
697+0.1 EUR
1000+0.091 EUR
3000+0.075 EUR
Mindestbestellmenge: 358
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IRS2092STRPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE991B35094D5D3F8BF&compId=IRS2092.pdf?ci_sign=d30561b8f2167b835e01440d97d321cfe7659908
IRS2092STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 1287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
29+2.52 EUR
31+2.35 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRF7413ZTRPBF description pVersion=0046&contRep=ZT&docId=E221A28B5E97DEF1A303005056AB0C4F&compId=irf7413zpbf.pdf?ci_sign=0a0941c7081f3ad0564ea06b4ffff92ce75b9dcf
IRF7413ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 3785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
112+0.64 EUR
148+0.48 EUR
218+0.33 EUR
231+0.31 EUR
1000+0.3 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
IRS20752LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCEF05BD07A745&compId=IRS20752ltrpbf.pdf?ci_sign=ef2d046c3868bd8f5a439bd44dd071464cf6744b
IRS20752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Turn-on time: 225ns
Turn-off time: 255ns
Number of channels: 1
Supply voltage: 10...18V DC
Voltage class: 200V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Operating temperature: -40...125°C
Output current: -240...160mA
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
88+0.82 EUR
94+0.76 EUR
114+0.63 EUR
121+0.59 EUR
1000+0.57 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
IRFP064NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA9CF1A6F5005056AB5A8F&compId=irfp064n.pdf?ci_sign=24f2d5c6c21e5e1e08dcd4962b305485e88e41fa
IRFP064NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
31+2.35 EUR
35+2.1 EUR
37+1.96 EUR
40+1.8 EUR
100+1.44 EUR
400+1.23 EUR
500+1.2 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3206PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACAE2F1A6F5005056AB5A8F&compId=irfp3206pbf.pdf?ci_sign=2ef9fa9035d9ed3b666b2138b0e0fedc28184ff0
IRFP3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
25+2.86 EUR
31+2.33 EUR
50+2 EUR
100+1.82 EUR
125+1.77 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRLML5103TRPBF pVersion=0046&contRep=ZT&docId=E2227BBBCDDD51F1A303005056AB0C4F&compId=irlml5103pbf.pdf?ci_sign=d05fc47b1999adccea3e17a03d7050a4a06178d1
IRLML5103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
142+0.5 EUR
Mindestbestellmenge: 142
Im Einkaufswagen  Stück im Wert von  UAH
IRF3415PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AC26F1A6F5005056AB5A8F&compId=irf3415.pdf?ci_sign=6557a603b03ca9e53218ae6af91344f121c3305f
IRF3415PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 133.3nC
On-state resistance: 42mΩ
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
50+1.44 EUR
57+1.26 EUR
100+1.19 EUR
250+1.13 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRF3415STRLPBF pVersion=0046&contRep=ZT&docId=E21F6077C01015F1A303005056AB0C4F&compId=irf3415spbf.pdf?ci_sign=31c310c17ce697aea79e1cb7cb67885503cefcfc
IRF3415STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP150NPBF description pVersion=0046&contRep=ZT&docId=E1C04E653ACAAAF1A6F5005056AB5A8F&compId=irfp150n.pdf?ci_sign=3d5f4181bac72740c14a3465f646a761c7e9dbee
IRFP150NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
41+1.74 EUR
70+1.03 EUR
74+0.97 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRFP054NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA95F1A6F5005056AB5A8F&compId=irfp054n.pdf?ci_sign=bcd46d929bd827ee9a9c3a41dc89ce2d51391be2
IRFP054NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
28+2.63 EUR
33+2.2 EUR
50+1.89 EUR
100+1.67 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BCP5216H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5BB543851E469&compId=BCP5216H6327XTSA1.pdf?ci_sign=32661be25e0eb08e39efe4bf55c87c5ce197e855
BCP5216H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 125MHz
Produkt ist nicht verfügbar
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ICE3A2065ELJFKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC193F4FA82D3D7&compId=ICE3A2065ELJ.pdf?ci_sign=3990ab0fbb34ff3915c4f3824fd7bec35a4aa8f9
ICE3A2065ELJFKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
Output current: 10.3A
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
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ICE3AR0680JZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC197E0F7F093D7&compId=ICE3AR0680JZ.pdf?ci_sign=e5a5a2a41e0d97336de868e16e9987b775cba6af
ICE3AR0680JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Mounting: THT
Power: 82/52W
Operating temperature: -25...130°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...75%
Number of channels: 1
Output current: 20A
Operating voltage: 10.5...25V DC
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 0.1MHz
Case: DIP7
Topology: flyback
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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