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IR2114SSPBF IR2114SSPBF INFINEON TECHNOLOGIES IR2114SSPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Supply voltage: 10.4...20V DC
Number of channels: 2
Case: SSOP24
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge
Voltage class: 0.6/1.2kV
Power: 1.5W
Type of integrated circuit: driver
auf Bestellung 30 Stücke:
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6+12.36 EUR
8+8.94 EUR
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IPB037N06N3GATMA1 IPB037N06N3GATMA1 INFINEON TECHNOLOGIES IPB037N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 3.7mΩ
Power dissipation: 188W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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FB30R06W1E3BOMA1 FB30R06W1E3BOMA1 INFINEON TECHNOLOGIES FB30R06W1E3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 INFINEON TECHNOLOGIES FP30R06KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
Produkt ist nicht verfügbar
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TLE4291EXUMA2 TLE4291EXUMA2 INFINEON TECHNOLOGIES Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
Voltage drop: 0.25V
Produkt ist nicht verfügbar
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BFP520H6327XTSA1 BFP520H6327XTSA1 INFINEON TECHNOLOGIES BFP520.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
auf Bestellung 2086 Stücke:
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125+0.57 EUR
171+0.42 EUR
243+0.29 EUR
317+0.23 EUR
336+0.21 EUR
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IPP072N10N3GXKSA1 IPP072N10N3GXKSA1 INFINEON TECHNOLOGIES IPP072N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BF888H6327XTSA1 BF888H6327XTSA1 INFINEON TECHNOLOGIES BF888.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 0.16W
Case: SOT343
Kind of package: reel; tape
Frequency: 47GHz
Mounting: SMD
Current gain: 250
Collector-emitter voltage: 4V
Collector current: 30mA
auf Bestellung 2515 Stücke:
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136+0.53 EUR
298+0.24 EUR
317+0.23 EUR
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IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10.1...16.8V DC
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
auf Bestellung 2407 Stücke:
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52+1.40 EUR
57+1.26 EUR
75+0.96 EUR
79+0.92 EUR
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IRFS7530TRLPBF IRFS7530TRLPBF INFINEON TECHNOLOGIES irfs7530pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 INFINEON TECHNOLOGIES BSO220N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 7.7A
On-state resistance: 22mΩ
Power dissipation: 1.56W
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP037N08N3GXKSA1 IPP037N08N3GXKSA1 INFINEON TECHNOLOGIES IPP037N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 150 Stücke:
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24+3.06 EUR
40+1.79 EUR
52+1.40 EUR
55+1.32 EUR
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IPB017N08N5ATMA1 IPB017N08N5ATMA1 INFINEON TECHNOLOGIES IPB017N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCR400WH6327XTSA1 BCR400WH6327XTSA1 INFINEON TECHNOLOGIES BCR400W.pdf Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Mounting: SMD
Case: SOT343
Power: 0.33W
Supply voltage: 1.6...18V DC
auf Bestellung 2880 Stücke:
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209+0.34 EUR
302+0.24 EUR
353+0.20 EUR
428+0.17 EUR
556+0.13 EUR
589+0.12 EUR
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IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP034NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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19+3.86 EUR
22+3.40 EUR
25+2.95 EUR
26+2.79 EUR
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BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES BSS606NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 945 Stücke:
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107+0.67 EUR
157+0.46 EUR
191+0.37 EUR
319+0.22 EUR
338+0.21 EUR
Mindestbestellmenge: 107
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 INFINEON TECHNOLOGIES IAUT260N10S5N019.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Case: PG-HSOF-8
Drain-source voltage: 100V
Drain current: 260A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 54nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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IPI020N06NAKSA1 IPI020N06NAKSA1 INFINEON TECHNOLOGIES IPI020N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 INFINEON TECHNOLOGIES IAUS165N08S5N029.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Mounting: SMD
Case: PG-HSOG-8
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 660A
Produkt ist nicht verfügbar
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IPB017N10N5ATMA1 IPB017N10N5ATMA1 INFINEON TECHNOLOGIES IPB017N10N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRLS3036TRL7PP IRLS3036TRL7PP INFINEON TECHNOLOGIES irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Mounting: SMD
Drain-source voltage: 60V
Drain current: 210A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Case: D2PAK-7
auf Bestellung 498 Stücke:
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17+4.33 EUR
19+3.90 EUR
23+3.13 EUR
25+2.96 EUR
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1EDF5673FXUMA1 1EDF5673FXUMA1 INFINEON TECHNOLOGIES 1EDF5673F_1EDF5663H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
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1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 INFINEON TECHNOLOGIES 1EDI20N12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
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1EDS5663HXUMA1 1EDS5663HXUMA1 INFINEON TECHNOLOGIES 1EDF5673F_1EDF5663H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
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IGOT60R070D1AUMA1 INFINEON TECHNOLOGIES IGOT60R070D1.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 125W
Gate current: 20mA
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IGT60R070D1ATMA1 IGT60R070D1ATMA1 INFINEON TECHNOLOGIES IGT60R070D1.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 125W
Gate current: 20mA
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IRFH7110TRPBF IRFH7110TRPBF INFINEON TECHNOLOGIES IRFH7110TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFTS9342TRPBF IRFTS9342TRPBF INFINEON TECHNOLOGIES irfts9342pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Drain-source voltage: -30V
Drain current: -5.8A
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 648 Stücke:
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105+0.69 EUR
143+0.50 EUR
184+0.39 EUR
230+0.31 EUR
424+0.17 EUR
447+0.16 EUR
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IRFTS8342TRPBF IRFTS8342TRPBF INFINEON TECHNOLOGIES irfts8342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 4442 Stücke:
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129+0.56 EUR
180+0.40 EUR
360+0.20 EUR
382+0.19 EUR
3000+0.18 EUR
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 INFINEON TECHNOLOGIES IPB015N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB015N04LGATMA1 IPB015N04LGATMA1 INFINEON TECHNOLOGIES IPB015N04LG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB017N06N3GATMA1 IPB017N06N3GATMA1 INFINEON TECHNOLOGIES IPB017N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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2EDS8165HXUMA1 2EDS8165HXUMA1 INFINEON TECHNOLOGIES 2EDF7xx5F_K_H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
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IPI80N06S407AKSA2 IPI80N06S407AKSA2 INFINEON TECHNOLOGIES IPI80N06S407AKSA2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Technology: OptiMOS® -T2
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.65 EUR
30+2.39 EUR
36+2.03 EUR
38+1.92 EUR
50+1.90 EUR
250+1.84 EUR
Mindestbestellmenge: 28
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IPB180N06S4H1ATMA2 INFINEON TECHNOLOGIES Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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TLS850F0TAV33ATMA1 TLS850F0TAV33ATMA1 INFINEON TECHNOLOGIES TLS850F0TAV33.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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TLS850F2TAV50ATMA1 INFINEON TECHNOLOGIES Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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IRLTS2242TRPBF IRLTS2242TRPBF INFINEON TECHNOLOGIES irlts2242pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 3336 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
152+0.47 EUR
219+0.33 EUR
424+0.17 EUR
447+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 122
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IRFR2307ZTRLPBF IRFR2307ZTRLPBF INFINEON TECHNOLOGIES irfr2307zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BC846SH6327XTSA1 BC846SH6327XTSA1 INFINEON TECHNOLOGIES BC846UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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BCP55H6327XTSA1 BCP55H6327XTSA1 INFINEON TECHNOLOGIES BCP55H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IRG4PSH71KDPBF IRG4PSH71KDPBF INFINEON TECHNOLOGIES irg4psh71kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IPW65R045C7FKSA1 IPW65R045C7FKSA1 INFINEON TECHNOLOGIES IPW65R045C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FF300R12KT4HOSA1 FF300R12KT4HOSA1 INFINEON TECHNOLOGIES FF300R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Produkt ist nicht verfügbar
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IRF6644TRPBF IRF6644TRPBF INFINEON TECHNOLOGIES irf6644pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IR2010PBF IR2010PBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Output current: -3...3A
Number of channels: 2
Voltage class: 200V
Power: 1.6W
Supply voltage: 10...20V DC
Turn-on time: 95ns
Turn-off time: 65ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.30 EUR
Mindestbestellmenge: 5
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TLE4269GXUMA1 TLE4269GXUMA1 INFINEON TECHNOLOGIES TLE4269.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
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XMC4108F64K64ABXQMA1 XMC4108F64K64ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Produkt ist nicht verfügbar
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XMC4500F100K768ACXQMA1 XMC4500F100K768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
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XMC4502F100K768ACXQMA1 XMC4502F100K768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Produkt ist nicht verfügbar
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XMC4700F144F1536AAXQMA1 XMC4700F144F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Produkt ist nicht verfügbar
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IRS21844STRPBF INFINEON TECHNOLOGIES irs2184.pdf?fileId=5546d462533600a401535676d8da27db Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
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BCX55H6327XTSA1 BCX55H6327XTSA1 INFINEON TECHNOLOGIES BCX55.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.49 EUR
Mindestbestellmenge: 48
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IPA60R380P6XKSA1 IPA60R380P6XKSA1 INFINEON TECHNOLOGIES IPA60R380P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XC822MT1FRIAAFXUMA1 XC822MT1FRIAAFXUMA1 INFINEON TECHNOLOGIES XC82X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
52+1.40 EUR
70+1.03 EUR
74+0.97 EUR
Mindestbestellmenge: 49
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IRFH5110TRPBF IRFH5110TRPBF INFINEON TECHNOLOGIES irfh5110pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPP180N10N3GXKSA1 IPP180N10N3GXKSA1 INFINEON TECHNOLOGIES IPP180N10N3G-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE42764GVATMA1 TLE42764GVATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Operating temperature: -40...150°C
Output voltage: 2.5...20V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.97 EUR
Mindestbestellmenge: 24
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TLE4268GXUMA2 TLE4268GXUMA2 INFINEON TECHNOLOGIES TLE4268G.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
Voltage drop: 0.25V
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
38+1.93 EUR
42+1.72 EUR
44+1.63 EUR
250+1.56 EUR
Mindestbestellmenge: 34
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TLE42764GV50ATMA1 TLE42764GV50ATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
Produkt ist nicht verfügbar
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IR2114SSPBF IR2114SSPBF.pdf
IR2114SSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Supply voltage: 10.4...20V DC
Number of channels: 2
Case: SSOP24
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge
Voltage class: 0.6/1.2kV
Power: 1.5W
Type of integrated circuit: driver
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.36 EUR
8+8.94 EUR
Mindestbestellmenge: 6
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IPB037N06N3GATMA1 IPB037N06N3G-DTE.pdf
IPB037N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 3.7mΩ
Power dissipation: 188W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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FB30R06W1E3BOMA1 FB30R06W1E3.pdf
FB30R06W1E3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 FP30R06KE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
Produkt ist nicht verfügbar
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TLE4291EXUMA2 Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce
TLE4291EXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
Voltage drop: 0.25V
Produkt ist nicht verfügbar
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BFP520H6327XTSA1 BFP520.pdf
BFP520H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
auf Bestellung 2086 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
171+0.42 EUR
243+0.29 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 125
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IPP072N10N3GXKSA1 IPP072N10N3G-DTE.pdf
IPP072N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.10 EUR
Mindestbestellmenge: 23
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BF888H6327XTSA1 BF888.pdf
BF888H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 0.16W
Case: SOT343
Kind of package: reel; tape
Frequency: 47GHz
Mounting: SMD
Current gain: 250
Collector-emitter voltage: 4V
Collector current: 30mA
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
298+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10.1...16.8V DC
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.40 EUR
57+1.26 EUR
75+0.96 EUR
79+0.92 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7530TRLPBF irfs7530pbf.pdf
IRFS7530TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO220N03MDGXUMA1 BSO220N03MDG-DTE.pdf
BSO220N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 7.7A
On-state resistance: 22mΩ
Power dissipation: 1.56W
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP037N08N3GXKSA1 IPP037N08N3G-DTE.pdf
IPP037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
40+1.79 EUR
52+1.40 EUR
55+1.32 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N08N5ATMA1 IPB017N08N5-DTE.pdf
IPB017N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCR400WH6327XTSA1 BCR400W.pdf
BCR400WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Mounting: SMD
Case: SOT343
Power: 0.33W
Supply voltage: 1.6...18V DC
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
302+0.24 EUR
353+0.20 EUR
428+0.17 EUR
556+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
IPP034NE7N3GXKSA1 IPP034NE7N3G-DTE.pdf
IPP034NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
22+3.40 EUR
25+2.95 EUR
26+2.79 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BSS606NH6327XTSA1 BSS606NH6327XTSA1.pdf
BSS606NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
157+0.46 EUR
191+0.37 EUR
319+0.22 EUR
338+0.21 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
IAUT260N10S5N019ATMA1 IAUT260N10S5N019.pdf
IAUT260N10S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Case: PG-HSOF-8
Drain-source voltage: 100V
Drain current: 260A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 54nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI020N06NAKSA1 IPI020N06N-DTE.pdf
IPI020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUS165N08S5N029ATMA1 IAUS165N08S5N029.pdf
IAUS165N08S5N029ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Mounting: SMD
Case: PG-HSOG-8
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 660A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N10N5ATMA1 IPB017N10N5-DTE.pdf
IPB017N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Mounting: SMD
Drain-source voltage: 60V
Drain current: 210A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Case: D2PAK-7
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.90 EUR
23+3.13 EUR
25+2.96 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1EDF5673FXUMA1 1EDF5673F_1EDF5663H.pdf
1EDF5673FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI20N12AFXUMA1 1EDI20N12AF.pdf
1EDI20N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDS5663HXUMA1 1EDF5673F_1EDF5663H.pdf
1EDS5663HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGOT60R070D1AUMA1 IGOT60R070D1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 125W
Gate current: 20mA
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 IGT60R070D1.pdf
IGT60R070D1ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 125W
Gate current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7110TRPBF IRFH7110TRPBF.pdf
IRFH7110TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFTS9342TRPBF irfts9342pbf.pdf
IRFTS9342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Drain-source voltage: -30V
Drain current: -5.8A
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
143+0.50 EUR
184+0.39 EUR
230+0.31 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
IRFTS8342TRPBF irfts8342pbf.pdf
IRFTS8342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 4442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
180+0.40 EUR
360+0.20 EUR
382+0.19 EUR
3000+0.18 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
IPB015N08N5ATMA1 IPB015N08N5-DTE.pdf
IPB015N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB015N04LGATMA1 IPB015N04LG.pdf
IPB015N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N06N3GATMA1 IPB017N06N3G-DTE.pdf
IPB017N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDS8165HXUMA1 2EDF7xx5F_K_H.pdf
2EDS8165HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N06S407AKSA2 IPI80N06S407AKSA2.pdf
IPI80N06S407AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Technology: OptiMOS® -T2
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
30+2.39 EUR
36+2.03 EUR
38+1.92 EUR
50+1.90 EUR
250+1.84 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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TLS850F0TAV33ATMA1 TLS850F0TAV33.pdf
TLS850F0TAV33ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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TLS850F2TAV50ATMA1 Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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IRLTS2242TRPBF irlts2242pbf.pdf
IRLTS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 3336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
152+0.47 EUR
219+0.33 EUR
424+0.17 EUR
447+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 122
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IRFR2307ZTRLPBF irfr2307zpbf.pdf
IRFR2307ZTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC846SH6327XTSA1 BC846UE6327.pdf
BC846SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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BCP55H6327XTSA1 BCP55H6327XTSA1.pdf
BCP55H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IRG4PSH71KDPBF irg4psh71kdpbf.pdf
IRG4PSH71KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IPW65R045C7FKSA1 IPW65R045C7-DTE.pdf
IPW65R045C7FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FF300R12KT4HOSA1 FF300R12KT4.pdf
FF300R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Produkt ist nicht verfügbar
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IRF6644TRPBF irf6644pbf.pdf
IRF6644TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IR2010PBF IR2010SPBF.pdf
IR2010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Output current: -3...3A
Number of channels: 2
Voltage class: 200V
Power: 1.6W
Supply voltage: 10...20V DC
Turn-on time: 95ns
Turn-off time: 65ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.30 EUR
Mindestbestellmenge: 5
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TLE4269GXUMA1 TLE4269.pdf
TLE4269GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
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XMC4108F64K64ABXQMA1 XMC4100-4200-DTE.pdf
XMC4108F64K64ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Produkt ist nicht verfügbar
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XMC4500F100K768ACXQMA1 XMC4500-DTE.pdf
XMC4500F100K768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Produkt ist nicht verfügbar
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XMC4502F100K768ACXQMA1 XMC4500-DTE.pdf
XMC4502F100K768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Produkt ist nicht verfügbar
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XMC4700F144F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4700F144F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Produkt ist nicht verfügbar
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IRS21844STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
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BCX55H6327XTSA1 BCX55.pdf
BCX55H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.49 EUR
Mindestbestellmenge: 48
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IPA60R380P6XKSA1 IPA60R380P6-DTE.pdf
IPA60R380P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XC822MT1FRIAAFXUMA1 XC82X-DTE.pdf
XC822MT1FRIAAFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
52+1.40 EUR
70+1.03 EUR
74+0.97 EUR
Mindestbestellmenge: 49
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IRFH5110TRPBF irfh5110pbf.pdf
IRFH5110TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPP180N10N3GXKSA1 IPP180N10N3G-dte.pdf
IPP180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE42764GVATMA1 TLE42764.pdf
TLE42764GVATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Operating temperature: -40...150°C
Output voltage: 2.5...20V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
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TLE4268GXUMA2 TLE4268G.pdf
TLE4268GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
Voltage drop: 0.25V
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
38+1.93 EUR
42+1.72 EUR
44+1.63 EUR
250+1.56 EUR
Mindestbestellmenge: 34
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TLE42764GV50ATMA1 TLE42764.pdf
TLE42764GV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
Produkt ist nicht verfügbar
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