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SPW35N60C3 SPW35N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58BF0F14026474A&compId=SPW35N60C3.pdf?ci_sign=d5cc3f9b644bd5805b4f67199468e72689a460cc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
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6+12.97 EUR
7+10.68 EUR
Mindestbestellmenge: 6
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IRFP3306PBF IRFP3306PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAE9F1A6F5005056AB5A8F&compId=irfp3306pbf.pdf?ci_sign=1f8fb5e0a84f430f9c9d6471d61ba587046f7b3c description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
23+3.19 EUR
48+1.52 EUR
50+1.43 EUR
Mindestbestellmenge: 19
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IRFP4468PBF IRFP4468PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C07DF1A6F5005056AB5A8F&compId=irfp4468pbf.pdf?ci_sign=eef523c294153480bee6f3f39501fda4f4a75d12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Mounting: THT
Case: TO247AC
Drain-source voltage: 100V
Drain current: 290A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 360nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.89 EUR
22+3.40 EUR
23+3.22 EUR
100+3.09 EUR
Mindestbestellmenge: 13
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IRFB4227PBF IRFB4227PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B736F1A6F5005056AB5A8F&compId=irfb4227pbf.pdf?ci_sign=73cadd42ded945992e2faf41c326daefc593b46d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Case: TO220AB
Drain-source voltage: 200V
Drain current: 65A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 190W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
53+1.37 EUR
65+1.12 EUR
68+1.06 EUR
Mindestbestellmenge: 32
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IRLML6402TRPBF IRLML6402TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF118D59B2D95EA&compId=IRLML6402TRPBF.pdf?ci_sign=cbdcaee48cfc20dd66c36e8dc65e96f5bc0941ff Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
Mindestbestellmenge: 66
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BSC100N03MSGATMA1 BSC100N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38C25CDBE7C611C&compId=BSC100N03MSG-DTE.pdf?ci_sign=d3a515f2e8fe5598d360f552b9155b246cfe36f8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Mounting: SMD
Power dissipation: 30W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 5.8nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 176A
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 28A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A580DBC045911820&compId=BSC100N06LS3G.pdf?ci_sign=5cfb9f41c9a01975b454eaf48ab23f5e8f178473 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 36A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 45nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
auf Bestellung 4643 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
85+0.84 EUR
167+0.43 EUR
176+0.41 EUR
2000+0.40 EUR
2500+0.39 EUR
Mindestbestellmenge: 52
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IRFP90N20DPBF IRFP90N20DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A7F1A6F5005056AB5A8F&compId=irfp90n20d.pdf?ci_sign=35d758d28b064f4d87903f236acbfb7653d7433c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Drain-source voltage: 200V
Drain current: 94A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 580W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO247AC
auf Bestellung 659 Stücke:
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10+7.64 EUR
22+3.32 EUR
23+3.13 EUR
Mindestbestellmenge: 10
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IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC81F7082D211C&compId=IPP075N15N3G-DTE.pdf?ci_sign=2206d84c866b44030e934a449c4dbb0ec14767f4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 100A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.61 EUR
18+4.13 EUR
19+3.90 EUR
Mindestbestellmenge: 11
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IRF7416TRPBF IRF7416TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2B1BB2E2AF1A303005056AB0C4F&compId=irf7416qpbf.pdf?ci_sign=48a07bb72ed8a46a228df4b109fde42c036d74c8 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF5210PBF IRF5210PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B27F1A6F5005056AB5A8F&compId=irf5210.pdf?ci_sign=e24ff7119c232139f774b544bfcb23e827bf91eb Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Case: TO220AB
Mounting: THT
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -100V
Drain current: -40A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
auf Bestellung 561 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.87 EUR
32+2.25 EUR
61+1.19 EUR
64+1.13 EUR
Mindestbestellmenge: 25
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IRF5210STRLPBF IRF5210STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.46 EUR
22+3.29 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 17
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IRF5210STRRPBF IRF5210STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS140WE6327HTSA1 BAS140WE6327HTSA1 INFINEON TECHNOLOGIES BAS140WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 6911 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
277+0.26 EUR
508+0.14 EUR
1137+0.06 EUR
1202+0.06 EUR
Mindestbestellmenge: 162
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ICE2QR0665XKLA1 ICE2QR0665XKLA1 INFINEON TECHNOLOGIES Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Application: SMPS
Operating voltage: 10.5...24V DC
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.30 EUR
Mindestbestellmenge: 5
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IRF7389TRPBF IRF7389TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A176919833F1A303005056AB0C4F&compId=irf7389pbf.pdf?ci_sign=33486cc5a79142c2d9ae938ef43a9f134b5aef0b description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFI3205PBF IRFI3205PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284B48F1A6F5005056AB5A8F&compId=irfi3205.pdf?ci_sign=52d8c371c50b82fd99e00416e1acfb35fbd9f833 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.20 EUR
31+2.37 EUR
32+2.25 EUR
50+2.23 EUR
100+2.19 EUR
Mindestbestellmenge: 23
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BCP5416H6327XTSA1 BCP5416H6327XTSA1 INFINEON TECHNOLOGIES bcp54_bcp55_bcp56.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Power dissipation: 2W
Produkt ist nicht verfügbar
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IR4427PBF IR4427PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.39 EUR
37+1.97 EUR
39+1.86 EUR
Mindestbestellmenge: 22
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IR4427STRPBF IR4427STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 2619 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
38+1.93 EUR
49+1.47 EUR
52+1.39 EUR
2500+1.37 EUR
Mindestbestellmenge: 34
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IRFB4310PBF IRFB4310PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A45F1A6F5005056AB5A8F&compId=irfs4310.pdf?ci_sign=5f019cb77481638d1fb392219f3c0e042cb82bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.20 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 23
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IRFB4310ZPBF IRFB4310ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A4CF1A6F5005056AB5A8F&compId=irfb4310zpbf.pdf?ci_sign=3b66071c2947244729f80c74ae0a1ee1680ad33d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Power dissipation: 250W
Gate charge: 0.12µC
Technology: HEXFET®
auf Bestellung 77 Stücke:
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17+4.36 EUR
33+2.19 EUR
35+2.06 EUR
Mindestbestellmenge: 17
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IRLR2905TRPBF IRLR2905TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227E7C7A9B11F1A303005056AB0C4F&compId=irlr2905pbf.pdf?ci_sign=2678948371069aa0e6fedfa56080ab82371e6360 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
63+1.15 EUR
149+0.48 EUR
158+0.45 EUR
Mindestbestellmenge: 44
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BAR81WH6327XTSA1 BAR81WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A26A2DA3067820&compId=BAR81.pdf?ci_sign=34e0f73e30b0ee29a7b8a6b9fc44f6096ce0a755 Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: switching
Features of semiconductor devices: RF
Mounting: SMD
Case: SOT343
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 80ns
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
177+0.41 EUR
199+0.36 EUR
227+0.32 EUR
240+0.30 EUR
Mindestbestellmenge: 69
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BAS28WH6327XTSA1 BAS28WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7FEB1F0F20469&compId=BAS28E6327HTSA1.pdf?ci_sign=61309fd24f01b821dccb60622dc4e896ab05d501 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Kind of package: reel; tape
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
300+0.24 EUR
Mindestbestellmenge: 300
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BC847CWH6327XTSA1 BC847CWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Collector-emitter voltage: 45V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.33W
Polarisation: bipolar
Mounting: SMD
Case: SOT323
Frequency: 250MHz
auf Bestellung 5072 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
286+0.25 EUR
500+0.14 EUR
637+0.11 EUR
1309+0.06 EUR
1386+0.05 EUR
Mindestbestellmenge: 209
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BC849CWH6327XTSA1 BC849CWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 30V
Current gain: 420...800
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT323
Frequency: 250MHz
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)
788+0.09 EUR
1017+0.07 EUR
Mindestbestellmenge: 788
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BC858CWH6327 BC858CWH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 30V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT323
Frequency: 250MHz
auf Bestellung 3047 Stücke:
Lieferzeit 14-21 Tag (e)
2193+0.03 EUR
2778+0.03 EUR
2959+0.02 EUR
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BC860CWH6327 BC860CWH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C7A678BAC469&compId=BC860CWH6327.pdf?ci_sign=089acfec796841105af32fdb8af9d00879956a20 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 45V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT323
Frequency: 250MHz
auf Bestellung 2935 Stücke:
Lieferzeit 14-21 Tag (e)
740+0.10 EUR
995+0.07 EUR
1130+0.06 EUR
1300+0.06 EUR
1375+0.05 EUR
Mindestbestellmenge: 740
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BCR108WH6327 BCR108WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323
Frequency: 170MHz
auf Bestellung 3505 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
810+0.09 EUR
900+0.08 EUR
1175+0.06 EUR
1245+0.06 EUR
Mindestbestellmenge: 380
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BCR116WH6327 BCR116WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323
Frequency: 150MHz
auf Bestellung 2585 Stücke:
Lieferzeit 14-21 Tag (e)
410+0.17 EUR
855+0.08 EUR
945+0.08 EUR
1235+0.06 EUR
1305+0.06 EUR
Mindestbestellmenge: 410
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BCR129WH6327 BCR129WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Mounting: SMD
Case: SOT323
Frequency: 150MHz
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
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ICE2A180ZXKLA1
+1
 		ICE2A180ZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6564F9B8095EA&compId=ICE2A265.pdf?ci_sign=b24b004e9b31a188c10f6a1d3585527c36658a70 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Output current: 4.1A
Power: 29/17W
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 ICE2QS02GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39D498D700259&compId=ICE2QS02G.pdf?ci_sign=e4bd689e7d7905ed242b81dfcdc4240d74f0894e Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2248 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
68+1.06 EUR
70+1.03 EUR
74+0.97 EUR
75+0.96 EUR
100+0.93 EUR
Mindestbestellmenge: 41
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ICE3BR0665JXKLA1 ICE3BR0665JXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492A96FF2A258BF&compId=ICE3BR0665J.pdf?ci_sign=2485ba497152d65b19cbd6488c3afc8c6cbd4e28 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 4.8A
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.45 EUR
30+2.40 EUR
32+2.27 EUR
Mindestbestellmenge: 21
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ICE3BR1765JXKLA1 ICE3BR1765JXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492B90DB14E18BF&compId=ICE3BR1765J.pdf?ci_sign=b06ecb24355917be2440a416b519d692a3668673 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 1.5A
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.60 EUR
31+2.36 EUR
35+2.04 EUR
38+1.93 EUR
Mindestbestellmenge: 28
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ICE3RBR0665JZXKLA1
+1
 		ICE3RBR0665JZXKLA1 INFINEON TECHNOLOGIES INFNS27653-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3RBR1765JZXKLA1
+1
 		ICE3RBR1765JZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE9949306FB11E998BF&compId=ICE3RBR1765JZ.pdf?ci_sign=51e37586229cebaa7e3a4060c0ad23c8a6fdf5ec Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
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ICE3RBR4765JZXKLA1
+1
 		ICE3RBR4765JZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492F6789822D8BF&compId=ICE3RBR4765JZ.pdf?ci_sign=ede773950aa5318fcee8c2f31f82a013a22b1219 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
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FP40R12KT3BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7D4FE1A26C0C4&compId=FP40R12KT3BOSA1.pdf?ci_sign=0aa9bc43484615c4a3a0a984a8b9b20af98dcae6 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BSC0906NSATMA1 BSC0906NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875B1D58D0211C&compId=BSC0906NS-DTE.pdf?ci_sign=86654d924452c6631898cc76a12dd5eb308b8719 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3012 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
120+0.60 EUR
156+0.46 EUR
172+0.42 EUR
174+0.41 EUR
190+0.38 EUR
Mindestbestellmenge: 81
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IRF7425TRPBF IRF7425TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db pVersion=0046&contRep=ZT&docId=E221A30B2ACF36F1A303005056AB0C4F&compId=irf7425pbf.pdf?ci_sign=8154e3d2bf5a42d04cc55b32e63b7ef1350777ab Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1106 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.80 EUR
53+1.36 EUR
76+0.94 EUR
81+0.89 EUR
1000+0.86 EUR
Mindestbestellmenge: 40
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IRFB3077PBF IRFB3077PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6B1F1A6F5005056AB5A8F&compId=irfb3077pbf.pdf?ci_sign=eb560ed04d0f30ce819df2a516ae68749dafec84 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Case: TO220AB
Drain-source voltage: 75V
Drain current: 210A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Kind of package: tube
Gate charge: 160nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
36+1.99 EUR
44+1.66 EUR
46+1.56 EUR
Mindestbestellmenge: 33
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BGA524N6E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84AD79882F6640D2&compId=BGA524N6.pdf?ci_sign=71cefdfaa396b54cd6f68001cfc818fd4743cc12 Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Mounting: SMT
Number of channels: 1
Case: TSNP6
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Integrated circuit features: low noise
Operating voltage: 1.5...3.3V
Noise Figure: 0.55dB
Produkt ist nicht verfügbar
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BTS640S2G BTS640S2G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697CD6C94488469&compId=BTS640S2G.pdf?ci_sign=6ab6339076f7ce3792ac6be94012d605c8ecfe8b Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.78 EUR
18+3.98 EUR
20+3.76 EUR
Mindestbestellmenge: 10
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IR2183SPBF IR2183SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.05 EUR
21+3.55 EUR
22+3.36 EUR
Mindestbestellmenge: 15
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BAS2103WE6327HTSA1 BAS2103WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0 Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Case: SOD323
auf Bestellung 8540 Stücke:
Lieferzeit 14-21 Tag (e)
182+0.39 EUR
300+0.24 EUR
455+0.16 EUR
550+0.13 EUR
618+0.12 EUR
1064+0.07 EUR
1137+0.06 EUR
Mindestbestellmenge: 182
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BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6 Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.21 EUR
375+0.19 EUR
425+0.17 EUR
485+0.15 EUR
510+0.14 EUR
Mindestbestellmenge: 335
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IRF630NPBF IRF630NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7BA5F1A6F5005056AB5A8F&compId=irf630n.pdf?ci_sign=18ba613c99e0732f47b97714cce46fc4863ae8f3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 23.3nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 323 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
82+0.88 EUR
101+0.71 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 62
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IRF630NSTRLPBF IRF630NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F679A2B26A9F1A303005056AB0C4F&compId=irf630npbf.pdf?ci_sign=b3ec9a3a45ee887745bbace6fe26eecf9c91c34a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
84+0.86 EUR
95+0.76 EUR
Mindestbestellmenge: 61
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SPA17N80C3 SPA17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FFC5C5839651BF&compId=SPA17N80C3-DTE.pdf?ci_sign=fe1ec0eca04326ebd576e6c1ab6064af6db530e3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.28 EUR
22+3.30 EUR
23+3.12 EUR
Mindestbestellmenge: 14
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SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1C8B20D0EB1BF&compId=SPB17N80C3-DTE.pdf?ci_sign=7a9740a6d8782001fb1d2e3a766be0f2035a313f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.72 EUR
14+5.15 EUR
15+4.88 EUR
250+4.69 EUR
Mindestbestellmenge: 11
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SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
22+3.32 EUR
23+3.15 EUR
100+3.13 EUR
Mindestbestellmenge: 17
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SPW17N80C3 SPW17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74B604CA355EA&compId=SPW17N80C3.pdf?ci_sign=8964f39b04abcc8eed47c2e250888ed93a2c8204 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.28 EUR
12+5.99 EUR
13+5.66 EUR
Mindestbestellmenge: 9
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IRFR9120NTRPBF IRFR9120NTRPBF INFINEON TECHNOLOGIES irfr9120npbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 39W
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.39 EUR
Mindestbestellmenge: 30
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IRF9540NLPBF IRF9540NLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B19F963B22F1A303005056AB0C4F&compId=irf9540nspbf.pdf?ci_sign=bc8689f8c2e12a92cb8c0748a6a17d76e15aa7e0 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.00 EUR
42+1.72 EUR
45+1.62 EUR
Mindestbestellmenge: 24
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IRF9540NPBF IRF9540NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B648F1A6F5005056AB5A8F&compId=irf9540n.pdf?ci_sign=1c565e0baf6d9ae4245f976eea01225d24493d80 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 64.7nC
Kind of package: tube
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
88+0.82 EUR
93+0.77 EUR
1000+0.75 EUR
Mindestbestellmenge: 38
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IRF9540NSTRLPBF IRF9540NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B19F963B22F1A303005056AB0C4F&compId=irf9540nspbf.pdf?ci_sign=bc8689f8c2e12a92cb8c0748a6a17d76e15aa7e0 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7843TRPBF IRLR7843TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF12A53ADB7F5EA&compId=IRLR7843TRPBF.pdf?ci_sign=811800f91ae3ae22ef949fd280234228e68a7137 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1570 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
57+1.27 EUR
61+1.17 EUR
81+0.89 EUR
85+0.84 EUR
500+0.82 EUR
Mindestbestellmenge: 43
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IRFP1405PBF IRFP1405PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B2A151B7CBBF4A15&compId=irfp1405pbf.pdf?ci_sign=dc842e80b63cc194f40a38909618016841365ed4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Case: TO247AC
Kind of package: tube
Drain-source voltage: 55V
Drain current: 110A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Gate charge: 180nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.48 EUR
18+4.00 EUR
24+3.07 EUR
25+2.90 EUR
Mindestbestellmenge: 16
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SPW35N60C3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58BF0F14026474A&compId=SPW35N60C3.pdf?ci_sign=d5cc3f9b644bd5805b4f67199468e72689a460cc
SPW35N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.97 EUR
7+10.68 EUR
Mindestbestellmenge: 6
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IRFP3306PBF description pVersion=0046&contRep=ZT&docId=E1C04E653ACAE9F1A6F5005056AB5A8F&compId=irfp3306pbf.pdf?ci_sign=1f8fb5e0a84f430f9c9d6471d61ba587046f7b3c
IRFP3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
23+3.19 EUR
48+1.52 EUR
50+1.43 EUR
Mindestbestellmenge: 19
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IRFP4468PBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C07DF1A6F5005056AB5A8F&compId=irfp4468pbf.pdf?ci_sign=eef523c294153480bee6f3f39501fda4f4a75d12
IRFP4468PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Mounting: THT
Case: TO247AC
Drain-source voltage: 100V
Drain current: 290A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 360nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.89 EUR
22+3.40 EUR
23+3.22 EUR
100+3.09 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4227PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B736F1A6F5005056AB5A8F&compId=irfb4227pbf.pdf?ci_sign=73cadd42ded945992e2faf41c326daefc593b46d
IRFB4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Case: TO220AB
Drain-source voltage: 200V
Drain current: 65A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 190W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
53+1.37 EUR
65+1.12 EUR
68+1.06 EUR
Mindestbestellmenge: 32
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IRLML6402TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF118D59B2D95EA&compId=IRLML6402TRPBF.pdf?ci_sign=cbdcaee48cfc20dd66c36e8dc65e96f5bc0941ff
IRLML6402TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
Mindestbestellmenge: 66
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BSC100N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38C25CDBE7C611C&compId=BSC100N03MSG-DTE.pdf?ci_sign=d3a515f2e8fe5598d360f552b9155b246cfe36f8
BSC100N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Mounting: SMD
Power dissipation: 30W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 5.8nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 176A
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 28A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC100N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A580DBC045911820&compId=BSC100N06LS3G.pdf?ci_sign=5cfb9f41c9a01975b454eaf48ab23f5e8f178473
BSC100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 36A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 45nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
auf Bestellung 4643 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
85+0.84 EUR
167+0.43 EUR
176+0.41 EUR
2000+0.40 EUR
2500+0.39 EUR
Mindestbestellmenge: 52
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IRFP90N20DPBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A7F1A6F5005056AB5A8F&compId=irfp90n20d.pdf?ci_sign=35d758d28b064f4d87903f236acbfb7653d7433c
IRFP90N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Drain-source voltage: 200V
Drain current: 94A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 580W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO247AC
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.64 EUR
22+3.32 EUR
23+3.13 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPP075N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC81F7082D211C&compId=IPP075N15N3G-DTE.pdf?ci_sign=2206d84c866b44030e934a449c4dbb0ec14767f4
IPP075N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 100A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.61 EUR
18+4.13 EUR
19+3.90 EUR
Mindestbestellmenge: 11
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IRF7416TRPBF pVersion=0046&contRep=ZT&docId=E221A2B1BB2E2AF1A303005056AB0C4F&compId=irf7416qpbf.pdf?ci_sign=48a07bb72ed8a46a228df4b109fde42c036d74c8
IRF7416TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7B27F1A6F5005056AB5A8F&compId=irf5210.pdf?ci_sign=e24ff7119c232139f774b544bfcb23e827bf91eb
IRF5210PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Case: TO220AB
Mounting: THT
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -100V
Drain current: -40A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
auf Bestellung 561 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.87 EUR
32+2.25 EUR
61+1.19 EUR
64+1.13 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210STRLPBF pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0
IRF5210STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
22+3.29 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210STRRPBF pVersion=0046&contRep=ZT&docId=E21F63BDAE0B83F1A303005056AB0C4F&compId=irf5210spbf.pdf?ci_sign=aef361af186b2ab2efe08dbbe182c9255b6462e0
IRF5210STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS140WE6327HTSA1 BAS140WE6327HTSA1.pdf
BAS140WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 6911 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
277+0.26 EUR
508+0.14 EUR
1137+0.06 EUR
1202+0.06 EUR
Mindestbestellmenge: 162
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ICE2QR0665XKLA1 Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab
ICE2QR0665XKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Application: SMPS
Operating voltage: 10.5...24V DC
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.30 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRF7389TRPBF description pVersion=0046&contRep=ZT&docId=E221A176919833F1A303005056AB0C4F&compId=irf7389pbf.pdf?ci_sign=33486cc5a79142c2d9ae938ef43a9f134b5aef0b
IRF7389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7.3/-5.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7.3/-5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFI3205PBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284B48F1A6F5005056AB5A8F&compId=irfi3205.pdf?ci_sign=52d8c371c50b82fd99e00416e1acfb35fbd9f833
IRFI3205PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.20 EUR
31+2.37 EUR
32+2.25 EUR
50+2.23 EUR
100+2.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
BCP5416H6327XTSA1 bcp54_bcp55_bcp56.pdf
BCP5416H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR4427PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91
IR4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
37+1.97 EUR
39+1.86 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR4427STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD978B3DAEA15EA&compId=IR4427PBF.pdf?ci_sign=8e23c3bb3101481f9a2340888126ceaba824bf91
IR4427STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -1.5...1.5A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 2619 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
38+1.93 EUR
49+1.47 EUR
52+1.39 EUR
2500+1.37 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A45F1A6F5005056AB5A8F&compId=irfs4310.pdf?ci_sign=5f019cb77481638d1fb392219f3c0e042cb82bb2
IRFB4310PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.20 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310ZPBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A4CF1A6F5005056AB5A8F&compId=irfb4310zpbf.pdf?ci_sign=3b66071c2947244729f80c74ae0a1ee1680ad33d
IRFB4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Power dissipation: 250W
Gate charge: 0.12µC
Technology: HEXFET®
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
33+2.19 EUR
35+2.06 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2905TRPBF description pVersion=0046&contRep=ZT&docId=E2227E7C7A9B11F1A303005056AB0C4F&compId=irlr2905pbf.pdf?ci_sign=2678948371069aa0e6fedfa56080ab82371e6360
IRLR2905TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
63+1.15 EUR
149+0.48 EUR
158+0.45 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BAR81WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A26A2DA3067820&compId=BAR81.pdf?ci_sign=34e0f73e30b0ee29a7b8a6b9fc44f6096ce0a755
BAR81WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: switching
Features of semiconductor devices: RF
Mounting: SMD
Case: SOT343
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 80ns
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
177+0.41 EUR
199+0.36 EUR
227+0.32 EUR
240+0.30 EUR
Mindestbestellmenge: 69
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BAS28WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7FEB1F0F20469&compId=BAS28E6327HTSA1.pdf?ci_sign=61309fd24f01b821dccb60622dc4e896ab05d501
BAS28WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Kind of package: reel; tape
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
300+0.24 EUR
Mindestbestellmenge: 300
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BC847CWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC847CWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Collector-emitter voltage: 45V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.33W
Polarisation: bipolar
Mounting: SMD
Case: SOT323
Frequency: 250MHz
auf Bestellung 5072 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
286+0.25 EUR
500+0.14 EUR
637+0.11 EUR
1309+0.06 EUR
1386+0.05 EUR
Mindestbestellmenge: 209
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BC849CWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC849CWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 30V
Current gain: 420...800
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT323
Frequency: 250MHz
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
788+0.09 EUR
1017+0.07 EUR
Mindestbestellmenge: 788
Im Einkaufswagen  Stück im Wert von  UAH
BC858CWH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4
BC858CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 30V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT323
Frequency: 250MHz
auf Bestellung 3047 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2193+0.03 EUR
2778+0.03 EUR
2959+0.02 EUR
Mindestbestellmenge: 2193
Im Einkaufswagen  Stück im Wert von  UAH
BC860CWH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C7A678BAC469&compId=BC860CWH6327.pdf?ci_sign=089acfec796841105af32fdb8af9d00879956a20
BC860CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 45V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT323
Frequency: 250MHz
auf Bestellung 2935 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
740+0.10 EUR
995+0.07 EUR
1130+0.06 EUR
1300+0.06 EUR
1375+0.05 EUR
Mindestbestellmenge: 740
Im Einkaufswagen  Stück im Wert von  UAH
BCR108WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150
BCR108WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323
Frequency: 170MHz
auf Bestellung 3505 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
380+0.19 EUR
810+0.09 EUR
900+0.08 EUR
1175+0.06 EUR
1245+0.06 EUR
Mindestbestellmenge: 380
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BCR116WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35
BCR116WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323
Frequency: 150MHz
auf Bestellung 2585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
410+0.17 EUR
855+0.08 EUR
945+0.08 EUR
1235+0.06 EUR
1305+0.06 EUR
Mindestbestellmenge: 410
Im Einkaufswagen  Stück im Wert von  UAH
BCR129WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf
BCR129WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Mounting: SMD
Case: SOT323
Frequency: 150MHz
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ICE2A180ZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6564F9B8095EA&compId=ICE2A265.pdf?ci_sign=b24b004e9b31a188c10f6a1d3585527c36658a70
ICE2A180ZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Output current: 4.1A
Power: 29/17W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE2QS02GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39D498D700259&compId=ICE2QS02G.pdf?ci_sign=e4bd689e7d7905ed242b81dfcdc4240d74f0894e
ICE2QS02GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
68+1.06 EUR
70+1.03 EUR
74+0.97 EUR
75+0.96 EUR
100+0.93 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
ICE3BR0665JXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492A96FF2A258BF&compId=ICE3BR0665J.pdf?ci_sign=2485ba497152d65b19cbd6488c3afc8c6cbd4e28
ICE3BR0665JXKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 4.8A
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
30+2.40 EUR
32+2.27 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
ICE3BR1765JXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492B90DB14E18BF&compId=ICE3BR1765J.pdf?ci_sign=b06ecb24355917be2440a416b519d692a3668673
ICE3BR1765JXKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 1.5A
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.60 EUR
31+2.36 EUR
35+2.04 EUR
38+1.93 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
ICE3RBR0665JZXKLA1 INFNS27653-1.pdf?t.download=true&u=5oefqw
ICE3RBR0665JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3RBR1765JZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE9949306FB11E998BF&compId=ICE3RBR1765JZ.pdf?ci_sign=51e37586229cebaa7e3a4060c0ad23c8a6fdf5ec
ICE3RBR1765JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3RBR4765JZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492F6789822D8BF&compId=ICE3RBR4765JZ.pdf?ci_sign=ede773950aa5318fcee8c2f31f82a013a22b1219
ICE3RBR4765JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP40R12KT3BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7D4FE1A26C0C4&compId=FP40R12KT3BOSA1.pdf?ci_sign=0aa9bc43484615c4a3a0a984a8b9b20af98dcae6
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BSC0906NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875B1D58D0211C&compId=BSC0906NS-DTE.pdf?ci_sign=86654d924452c6631898cc76a12dd5eb308b8719
BSC0906NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3012 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
120+0.60 EUR
156+0.46 EUR
172+0.42 EUR
174+0.41 EUR
190+0.38 EUR
Mindestbestellmenge: 81
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IRF7425TRPBF pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db pVersion=0046&contRep=ZT&docId=E221A30B2ACF36F1A303005056AB0C4F&compId=irf7425pbf.pdf?ci_sign=8154e3d2bf5a42d04cc55b32e63b7ef1350777ab
IRF7425TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.80 EUR
53+1.36 EUR
76+0.94 EUR
81+0.89 EUR
1000+0.86 EUR
Mindestbestellmenge: 40
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IRFB3077PBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B6B1F1A6F5005056AB5A8F&compId=irfb3077pbf.pdf?ci_sign=eb560ed04d0f30ce819df2a516ae68749dafec84
IRFB3077PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Case: TO220AB
Drain-source voltage: 75V
Drain current: 210A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Kind of package: tube
Gate charge: 160nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
36+1.99 EUR
44+1.66 EUR
46+1.56 EUR
Mindestbestellmenge: 33
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BGA524N6E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84AD79882F6640D2&compId=BGA524N6.pdf?ci_sign=71cefdfaa396b54cd6f68001cfc818fd4743cc12
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Mounting: SMT
Number of channels: 1
Case: TSNP6
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Integrated circuit features: low noise
Operating voltage: 1.5...3.3V
Noise Figure: 0.55dB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS640S2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697CD6C94488469&compId=BTS640S2G.pdf?ci_sign=6ab6339076f7ce3792ac6be94012d605c8ecfe8b
BTS640S2G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.78 EUR
18+3.98 EUR
20+3.76 EUR
Mindestbestellmenge: 10
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IR2183SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff
IR2183SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.05 EUR
21+3.55 EUR
22+3.36 EUR
Mindestbestellmenge: 15
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BAS2103WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0
BAS2103WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Case: SOD323
auf Bestellung 8540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
182+0.39 EUR
300+0.24 EUR
455+0.16 EUR
550+0.13 EUR
618+0.12 EUR
1064+0.07 EUR
1137+0.06 EUR
Mindestbestellmenge: 182
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BA592E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
335+0.21 EUR
375+0.19 EUR
425+0.17 EUR
485+0.15 EUR
510+0.14 EUR
Mindestbestellmenge: 335
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IRF630NPBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7BA5F1A6F5005056AB5A8F&compId=irf630n.pdf?ci_sign=18ba613c99e0732f47b97714cce46fc4863ae8f3
IRF630NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 23.3nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 323 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
82+0.88 EUR
101+0.71 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 62
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IRF630NSTRLPBF pVersion=0046&contRep=ZT&docId=E21F679A2B26A9F1A303005056AB0C4F&compId=irf630npbf.pdf?ci_sign=b3ec9a3a45ee887745bbace6fe26eecf9c91c34a
IRF630NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
84+0.86 EUR
95+0.76 EUR
Mindestbestellmenge: 61
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SPA17N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FFC5C5839651BF&compId=SPA17N80C3-DTE.pdf?ci_sign=fe1ec0eca04326ebd576e6c1ab6064af6db530e3
SPA17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.28 EUR
22+3.30 EUR
23+3.12 EUR
Mindestbestellmenge: 14
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SPB17N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1C8B20D0EB1BF&compId=SPB17N80C3-DTE.pdf?ci_sign=7a9740a6d8782001fb1d2e3a766be0f2035a313f
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.72 EUR
14+5.15 EUR
15+4.88 EUR
250+4.69 EUR
Mindestbestellmenge: 11
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SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
22+3.32 EUR
23+3.15 EUR
100+3.13 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SPW17N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74B604CA355EA&compId=SPW17N80C3.pdf?ci_sign=8964f39b04abcc8eed47c2e250888ed93a2c8204
SPW17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.28 EUR
12+5.99 EUR
13+5.66 EUR
Mindestbestellmenge: 9
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IRFR9120NTRPBF description irfr9120npbf.pdf
IRFR9120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 39W
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
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IRF9540NLPBF pVersion=0046&contRep=ZT&docId=E221B19F963B22F1A303005056AB0C4F&compId=irf9540nspbf.pdf?ci_sign=bc8689f8c2e12a92cb8c0748a6a17d76e15aa7e0
IRF9540NLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.00 EUR
42+1.72 EUR
45+1.62 EUR
Mindestbestellmenge: 24
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IRF9540NPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B648F1A6F5005056AB5A8F&compId=irf9540n.pdf?ci_sign=1c565e0baf6d9ae4245f976eea01225d24493d80
IRF9540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 64.7nC
Kind of package: tube
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
88+0.82 EUR
93+0.77 EUR
1000+0.75 EUR
Mindestbestellmenge: 38
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IRF9540NSTRLPBF description pVersion=0046&contRep=ZT&docId=E221B19F963B22F1A303005056AB0C4F&compId=irf9540nspbf.pdf?ci_sign=bc8689f8c2e12a92cb8c0748a6a17d76e15aa7e0
IRF9540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7843TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF12A53ADB7F5EA&compId=IRLR7843TRPBF.pdf?ci_sign=811800f91ae3ae22ef949fd280234228e68a7137
IRLR7843TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
57+1.27 EUR
61+1.17 EUR
81+0.89 EUR
85+0.84 EUR
500+0.82 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRFP1405PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B2A151B7CBBF4A15&compId=irfp1405pbf.pdf?ci_sign=dc842e80b63cc194f40a38909618016841365ed4
IRFP1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Case: TO247AC
Kind of package: tube
Drain-source voltage: 55V
Drain current: 110A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Gate charge: 180nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
18+4.00 EUR
24+3.07 EUR
25+2.90 EUR
Mindestbestellmenge: 16
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