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IKB20N60TATMA1 IKB20N60TATMA1 INFINEON TECHNOLOGIES IKB20N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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IKP20N60H3XKSA1 IKP20N60H3XKSA1 INFINEON TECHNOLOGIES IKP20N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 31ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
auf Bestellung 78 Stücke:
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26+2.76 EUR
40+1.83 EUR
53+1.36 EUR
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IKP20N60TXKSA1 IKP20N60TXKSA1 INFINEON TECHNOLOGIES IKP20N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 369 Stücke:
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21+3.53 EUR
25+2.97 EUR
50+2.04 EUR
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IKW20N60H3FKSA1 IKW20N60H3FKSA1 INFINEON TECHNOLOGIES IKW20N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 28ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
auf Bestellung 18 Stücke:
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18+3.98 EUR
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IKW20N60TFKSA1 IKW20N60TFKSA1 INFINEON TECHNOLOGIES IKW20N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 92 Stücke:
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19+3.86 EUR
25+2.9 EUR
28+2.6 EUR
33+2.19 EUR
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SPA20N60C3 SPA20N60C3 INFINEON TECHNOLOGIES spp20n60c3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
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14+5.29 EUR
18+4.1 EUR
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SPA20N60CFDXKSA1 SPA20N60CFDXKSA1 INFINEON TECHNOLOGIES SPA20N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPB20N60C3 SPB20N60C3 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 763 Stücke:
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18+4.16 EUR
20+3.68 EUR
25+3.3 EUR
100+3.13 EUR
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SPB20N60S5 SPB20N60S5 INFINEON TECHNOLOGIES SPB20N60S5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLML0030TRPBF IRLML0030TRPBF INFINEON TECHNOLOGIES irlml0030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4786 Stücke:
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173+0.41 EUR
232+0.31 EUR
285+0.25 EUR
353+0.2 EUR
532+0.13 EUR
589+0.12 EUR
650+0.11 EUR
3000+0.1 EUR
Mindestbestellmenge: 173
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IRFR220NTRPBF IRFR220NTRPBF INFINEON TECHNOLOGIES irfr220npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1888 Stücke:
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59+1.22 EUR
74+0.98 EUR
84+0.86 EUR
117+0.62 EUR
133+0.54 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 59
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BAS1602VH6327XTSA1 BAS1602VH6327XTSA1 INFINEON TECHNOLOGIES BAS1602VH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 3272 Stücke:
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625+0.11 EUR
758+0.094 EUR
839+0.085 EUR
1000+0.072 EUR
1112+0.064 EUR
1202+0.059 EUR
1257+0.057 EUR
3000+0.051 EUR
Mindestbestellmenge: 625
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BAS1603WE6327HTSA1 BAS1603WE6327HTSA1 INFINEON TECHNOLOGIES BAS1603WE6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 614 Stücke:
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614+0.12 EUR
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BAS16E6327HTSA1 BAS16E6327HTSA1 INFINEON TECHNOLOGIES BAS1603WE6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 6626 Stücke:
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1000+0.072 EUR
1214+0.059 EUR
1352+0.053 EUR
1458+0.049 EUR
1534+0.047 EUR
1619+0.044 EUR
Mindestbestellmenge: 1000
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IRFZ48NPBF IRFZ48NPBF INFINEON TECHNOLOGIES irfz48n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
100+0.72 EUR
105+0.68 EUR
116+0.62 EUR
250+0.58 EUR
500+0.52 EUR
Mindestbestellmenge: 90
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IRFZ48NSTRLPBF IRFZ48NSTRLPBF INFINEON TECHNOLOGIES irfz48nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFB7545PBF IRFB7545PBF INFINEON TECHNOLOGIES irfb7545pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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IRLML5203TRPBF IRLML5203TRPBF INFINEON TECHNOLOGIES irlml5203pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3935 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
210+0.34 EUR
288+0.25 EUR
327+0.22 EUR
388+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
3000+0.13 EUR
Mindestbestellmenge: 157
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IRF9Z34NPBF IRF9Z34NPBF INFINEON TECHNOLOGIES irf9z34n.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 23.3nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 1623 Stücke:
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61+1.17 EUR
174+0.41 EUR
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IKP15N65F5XKSA1 IKP15N65F5XKSA1 INFINEON TECHNOLOGIES IKP15N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Turn-off time: 166ns
Turn-on time: 24ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
auf Bestellung 95 Stücke:
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46+1.59 EUR
53+1.36 EUR
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IR2104PBF IR2104PBF INFINEON TECHNOLOGIES IR2104PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
27+2.69 EUR
29+2.5 EUR
50+2.37 EUR
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IR2104SPBF IR2104SPBF INFINEON TECHNOLOGIES ir2104.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Output current: -270...130mA
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
38+1.89 EUR
43+1.7 EUR
49+1.49 EUR
50+1.44 EUR
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IR2104STRPBF IR2104STRPBF INFINEON TECHNOLOGIES IR2104PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Output current: -270...130mA
auf Bestellung 1324 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
69+1.05 EUR
75+0.96 EUR
80+0.9 EUR
100+0.85 EUR
250+0.8 EUR
500+0.79 EUR
Mindestbestellmenge: 50
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IGB50N60TATMA1 IGB50N60TATMA1 INFINEON TECHNOLOGIES IGB50N60T-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Power dissipation: 333W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGP50N60TXKSA1 IGP50N60TXKSA1 INFINEON TECHNOLOGIES IGP50N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGW50N60H3FKSA1 IGW50N60H3FKSA1 INFINEON TECHNOLOGIES IGW50N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.4 EUR
26+2.77 EUR
30+2.49 EUR
Mindestbestellmenge: 22
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IGW50N60TFKSA1 IGW50N60TFKSA1 INFINEON TECHNOLOGIES IGW50N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 114 Stücke:
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15+4.95 EUR
19+3.85 EUR
Mindestbestellmenge: 15
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IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES IKW50N60DTP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.07 EUR
26+2.77 EUR
30+2.45 EUR
120+2.2 EUR
240+2.06 EUR
Mindestbestellmenge: 24
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IKW50N60H3FKSA1 IKW50N60H3FKSA1 INFINEON TECHNOLOGIES IKW50N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.41 EUR
16+4.76 EUR
30+4.3 EUR
120+3.86 EUR
240+3.6 EUR
Mindestbestellmenge: 14
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IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES IKW50N60T-dte.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.85 EUR
14+5.15 EUR
30+4.65 EUR
Mindestbestellmenge: 13
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AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 INFINEON TECHNOLOGIES AIKW50N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
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IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 INFINEON TECHNOLOGIES IKFW50N60DH3E.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
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IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 INFINEON TECHNOLOGIES IKFW50N60ET.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
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IPD50N06S409ATMA2 INFINEON TECHNOLOGIES INFNS13307-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD50N06S4L08ATMA2 INFINEON TECHNOLOGIES INFNS14103-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
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IPD50N06S4L12ATMA2 IPD50N06S4L12ATMA2 INFINEON TECHNOLOGIES IPD50N06S4L12.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
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IPD350N06LGBTMA1 IPD350N06LGBTMA1 INFINEON TECHNOLOGIES IPD350N06LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
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IRF7313TRPBF IRF7313TRPBF INFINEON TECHNOLOGIES irf7313pbf.pdf description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
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93+0.78 EUR
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250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
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AUIRF7341QTR AUIRF7341QTR INFINEON TECHNOLOGIES auirf7341q.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Gate-source voltage: ±20V
Technology: HEXFET®
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BSS84PWH6327XTSA1 BSS84PWH6327XTSA1 INFINEON TECHNOLOGIES BSS84PWH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
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455+0.16 EUR
725+0.099 EUR
977+0.073 EUR
1092+0.065 EUR
1370+0.052 EUR
1484+0.048 EUR
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
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14+5.13 EUR
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IRFZ44NPBF IRFZ44NPBF INFINEON TECHNOLOGIES IRFZ44Npbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 42nC
On-state resistance: 17.5mΩ
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IRFZ44NSTRLPBF IRFZ44NSTRLPBF INFINEON TECHNOLOGIES irfz44nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IGW60N60H3FKSA1 IGW60N60H3FKSA1 INFINEON TECHNOLOGIES IGW60N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
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IKW60N60H3FKSA1 IKW60N60H3FKSA1 INFINEON TECHNOLOGIES IKW60N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
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IKFW60N60DH3EXKSA1 IKFW60N60DH3EXKSA1 INFINEON TECHNOLOGIES IKFW60N60DH3E.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
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IKFW60N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
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IRF640NPBF IRF640NPBF INFINEON TECHNOLOGIES irf640n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 44.7nC
Kind of package: tube
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76+0.95 EUR
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130+0.55 EUR
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IRF640NSTRLPBF IRF640NSTRLPBF INFINEON TECHNOLOGIES irf640npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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100+0.81 EUR
250+0.72 EUR
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IRL540NPBF IRL540NPBF INFINEON TECHNOLOGIES irl540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
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48+1.52 EUR
69+1.04 EUR
78+0.92 EUR
85+0.85 EUR
100+0.78 EUR
250+0.69 EUR
500+0.63 EUR
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IRFP4668PBF IRFP4668PBF INFINEON TECHNOLOGIES irfp4668pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
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SPD04N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
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SPP24N60C3 SPP24N60C3 INFINEON TECHNOLOGIES SPP24N60C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
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IRF3710LPBF IRF3710LPBF INFINEON TECHNOLOGIES irf3710spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Mounting: THT
Polarisation: unipolar
Case: TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain current: 57A
Drain-source voltage: 100V
Power dissipation: 200W
Kind of channel: enhancement
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IRF3710PBF IRF3710PBF INFINEON TECHNOLOGIES irf3710.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Mounting: THT
Polarisation: unipolar
Case: TO220AB
Kind of package: tube
Gate charge: 86.7nC
Type of transistor: N-MOSFET
On-state resistance: 23mΩ
Technology: HEXFET®
Gate-source voltage: ±20V
Drain current: 57A
Drain-source voltage: 100V
Power dissipation: 200W
Kind of channel: enhancement
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IRF3710STRLPBF IRF3710STRLPBF INFINEON TECHNOLOGIES irf3710spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Mounting: SMD
Polarisation: unipolar
Case: D2PAK
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain current: 57A
Drain-source voltage: 100V
Power dissipation: 200W
Kind of channel: enhancement
auf Bestellung 402 Stücke:
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33+2.17 EUR
46+1.56 EUR
55+1.31 EUR
100+1.21 EUR
250+1.08 EUR
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IRF3710STRRPBF IRF3710STRRPBF INFINEON TECHNOLOGIES irf3710spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Mounting: SMD
Polarisation: unipolar
Case: D2PAK
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain current: 57A
Drain-source voltage: 100V
Power dissipation: 200W
Kind of channel: enhancement
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IRF3710ZPBF IRF3710ZPBF INFINEON TECHNOLOGIES irf3710z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Mounting: THT
Polarisation: unipolar
Case: TO220AB
Kind of package: tube
Gate charge: 82nC
Type of transistor: N-MOSFET
On-state resistance: 18mΩ
Technology: HEXFET®
Gate-source voltage: ±20V
Drain current: 59A
Drain-source voltage: 100V
Power dissipation: 160W
Kind of channel: enhancement
auf Bestellung 308 Stücke:
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35+2.1 EUR
48+1.52 EUR
61+1.18 EUR
66+1.09 EUR
74+0.98 EUR
100+0.9 EUR
200+0.83 EUR
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IRF3710ZSTRLPBF IRF3710ZSTRLPBF INFINEON TECHNOLOGIES irf3710zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Mounting: SMD
Polarisation: unipolar
Case: D2PAK
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain current: 59A
Drain-source voltage: 100V
Power dissipation: 160W
Kind of channel: enhancement
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AUIRF3710ZSTRL AUIRF3710ZSTRL INFINEON TECHNOLOGIES auirf3710z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Mounting: SMD
Polarisation: unipolar
Case: D2PAK
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain current: 59A
Drain-source voltage: 100V
Power dissipation: 160W
Kind of channel: enhancement
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IKB20N60TATMA1 IKB20N60T.pdf
IKB20N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 166W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
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IKP20N60H3XKSA1 IKP20N60H3-DTE.pdf
IKP20N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 85W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 31ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
40+1.83 EUR
53+1.36 EUR
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IKP20N60TXKSA1 IKP20N60T.pdf
IKP20N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 36ns
Turn-off time: 299ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 369 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
25+2.97 EUR
50+2.04 EUR
Mindestbestellmenge: 21
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IKW20N60H3FKSA1 IKW20N60H3.pdf
IKW20N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 85W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 85W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 28ns
Turn-off time: 205ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
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IKW20N60TFKSA1 IKW20N60T.pdf
IKW20N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
25+2.9 EUR
28+2.6 EUR
33+2.19 EUR
Mindestbestellmenge: 19
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SPA20N60C3 spp20n60c3.pdf
SPA20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.29 EUR
18+4.1 EUR
Mindestbestellmenge: 14
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SPA20N60CFDXKSA1 SPA20N60CFD.pdf
SPA20N60CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB20N60C3
SPB20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 763 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.16 EUR
20+3.68 EUR
25+3.3 EUR
100+3.13 EUR
Mindestbestellmenge: 18
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SPB20N60S5 SPB20N60S5.pdf
SPB20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0030TRPBF irlml0030pbf.pdf
IRLML0030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4786 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
232+0.31 EUR
285+0.25 EUR
353+0.2 EUR
532+0.13 EUR
589+0.12 EUR
650+0.11 EUR
3000+0.1 EUR
Mindestbestellmenge: 173
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IRFR220NTRPBF irfr220npbf.pdf
IRFR220NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
74+0.98 EUR
84+0.86 EUR
117+0.62 EUR
133+0.54 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 59
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BAS1602VH6327XTSA1 BAS1602VH6327XTSA1.pdf
BAS1602VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC79; Ufmax: 1.25V; Ifsm: 2.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SC79
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 3272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
758+0.094 EUR
839+0.085 EUR
1000+0.072 EUR
1112+0.064 EUR
1202+0.059 EUR
1257+0.057 EUR
3000+0.051 EUR
Mindestbestellmenge: 625
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BAS1603WE6327HTSA1 BAS1603WE6327HTSA1.pdf
BAS1603WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOD323; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
614+0.12 EUR
Mindestbestellmenge: 614
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BAS16E6327HTSA1 BAS1603WE6327HTSA1.pdf
BAS16E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 4ns; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 6626 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.072 EUR
1214+0.059 EUR
1352+0.053 EUR
1458+0.049 EUR
1534+0.047 EUR
1619+0.044 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48NPBF irfz48n.pdf
IRFZ48NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 94W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
100+0.72 EUR
105+0.68 EUR
116+0.62 EUR
250+0.58 EUR
500+0.52 EUR
Mindestbestellmenge: 90
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IRFZ48NSTRLPBF irfz48nspbf.pdf
IRFZ48NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 64A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7545PBF irfb7545pbf.pdf
IRFB7545PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLML5203TRPBF irlml5203pbf.pdf
IRLML5203TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3935 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
210+0.34 EUR
288+0.25 EUR
327+0.22 EUR
388+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
3000+0.13 EUR
Mindestbestellmenge: 157
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IRF9Z34NPBF description irf9z34n.pdf
IRF9Z34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 23.3nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 1623 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
174+0.41 EUR
Mindestbestellmenge: 61
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IKP15N65F5XKSA1 IKP15N65F5.pdf
IKP15N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 52.5W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Turn-off time: 166ns
Turn-on time: 24ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
53+1.36 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IR2104PBF description IR2104PBF.pdf
IR2104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
27+2.69 EUR
29+2.5 EUR
50+2.37 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2104SPBF description ir2104.pdf
IR2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Output current: -270...130mA
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
38+1.89 EUR
43+1.7 EUR
49+1.49 EUR
50+1.44 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IR2104STRPBF description IR2104PBF.pdf
IR2104STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Turn-off time: 150ns
Turn-on time: 680ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Output current: -270...130mA
auf Bestellung 1324 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
69+1.05 EUR
75+0.96 EUR
80+0.9 EUR
100+0.85 EUR
250+0.8 EUR
500+0.79 EUR
Mindestbestellmenge: 50
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IGB50N60TATMA1 IGB50N60T-DTE.pdf
IGB50N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Power dissipation: 333W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP50N60TXKSA1 IGP50N60T-DTE.pdf
IGP50N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 IGW50N60H3-DTE.pdf
IGW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
26+2.77 EUR
30+2.49 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60T-DTE.pdf
IGW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.95 EUR
19+3.85 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 IKW50N60DTP.pdf
IKW50N60DTPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
26+2.77 EUR
30+2.45 EUR
120+2.2 EUR
240+2.06 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3.pdf
IKW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.41 EUR
16+4.76 EUR
30+4.3 EUR
120+3.86 EUR
240+3.6 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60T-dte.pdf
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.85 EUR
14+5.15 EUR
30+4.65 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 AIKW50N60CT.pdf
AIKW50N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 IKFW50N60DH3E.pdf
IKFW50N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 IKFW50N60ET.pdf
IKFW50N60ETXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S409ATMA2 INFNS13307-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N06S4L08ATMA2 INFNS14103-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N06S4L12ATMA2 IPD50N06S4L12.pdf
IPD50N06S4L12ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 1621 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
74+0.97 EUR
83+0.87 EUR
100+0.79 EUR
500+0.75 EUR
Mindestbestellmenge: 50
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IPD350N06LGBTMA1 IPD350N06LG-DTE.pdf
IPD350N06LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
81+0.89 EUR
123+0.58 EUR
500+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 52
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IRF7313TRPBF description irf7313pbf.pdf
IRF7313TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 3479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
93+0.78 EUR
138+0.52 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.33 EUR
Mindestbestellmenge: 65
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AUIRF7341QTR auirf7341q.pdf
AUIRF7341QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Gate-source voltage: ±20V
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PWH6327XTSA1 BSS84PWH6327XTSA1-dte.pdf
BSS84PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 4069 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
725+0.099 EUR
977+0.073 EUR
1092+0.065 EUR
1370+0.052 EUR
1484+0.048 EUR
3000+0.043 EUR
Mindestbestellmenge: 455
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IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.21 EUR
13+5.92 EUR
14+5.13 EUR
16+4.66 EUR
20+4 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NPBF IRFZ44Npbf.pdf
IRFZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 42nC
On-state resistance: 17.5mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NSTRLPBF irfz44nspbf.pdf
IRFZ44NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW60N60H3FKSA1 IGW60N60H3-DTE.pdf
IGW60N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.44 EUR
12+6.12 EUR
30+5.72 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW60N60H3FKSA1 IKW60N60H3.pdf
IKW60N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Collector current: 60A
Pulsed collector current: 180A
Manufacturer series: H3
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60DH3EXKSA1 IKFW60N60DH3E.pdf
IKFW60N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60EH3XKSA1 Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NPBF irf640n.pdf
IRF640NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 44.7nC
Kind of package: tube
auf Bestellung 578 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
76+0.95 EUR
95+0.76 EUR
113+0.64 EUR
130+0.55 EUR
250+0.48 EUR
500+0.45 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NSTRLPBF irf640npbf.pdf
IRF640NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
65+1.11 EUR
81+0.89 EUR
100+0.81 EUR
250+0.72 EUR
800+0.61 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRL540NPBF irl540n.pdf
IRL540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
69+1.04 EUR
78+0.92 EUR
85+0.85 EUR
100+0.78 EUR
250+0.69 EUR
500+0.63 EUR
1000+0.58 EUR
2000+0.53 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4668PBF irfp4668pbf.pdf
IRFP4668PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N60C3ATMA1 Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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SPP24N60C3 description SPP24N60C3.pdf
SPP24N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710LPBF irf3710spbf.pdf
IRF3710LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Mounting: THT
Polarisation: unipolar
Case: TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain current: 57A
Drain-source voltage: 100V
Power dissipation: 200W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710PBF irf3710.pdf
IRF3710PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Mounting: THT
Polarisation: unipolar
Case: TO220AB
Kind of package: tube
Gate charge: 86.7nC
Type of transistor: N-MOSFET
On-state resistance: 23mΩ
Technology: HEXFET®
Gate-source voltage: ±20V
Drain current: 57A
Drain-source voltage: 100V
Power dissipation: 200W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRLPBF irf3710spbf.pdf
IRF3710STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Mounting: SMD
Polarisation: unipolar
Case: D2PAK
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain current: 57A
Drain-source voltage: 100V
Power dissipation: 200W
Kind of channel: enhancement
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
46+1.56 EUR
55+1.31 EUR
100+1.21 EUR
250+1.08 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRRPBF irf3710spbf.pdf
IRF3710STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Mounting: SMD
Polarisation: unipolar
Case: D2PAK
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain current: 57A
Drain-source voltage: 100V
Power dissipation: 200W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZPBF irf3710z.pdf
IRF3710ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Mounting: THT
Polarisation: unipolar
Case: TO220AB
Kind of package: tube
Gate charge: 82nC
Type of transistor: N-MOSFET
On-state resistance: 18mΩ
Technology: HEXFET®
Gate-source voltage: ±20V
Drain current: 59A
Drain-source voltage: 100V
Power dissipation: 160W
Kind of channel: enhancement
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
48+1.52 EUR
61+1.18 EUR
66+1.09 EUR
74+0.98 EUR
100+0.9 EUR
200+0.83 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZSTRLPBF irf3710zpbf.pdf
IRF3710ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Mounting: SMD
Polarisation: unipolar
Case: D2PAK
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain current: 59A
Drain-source voltage: 100V
Power dissipation: 160W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF3710ZSTRL auirf3710z.pdf
AUIRF3710ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Mounting: SMD
Polarisation: unipolar
Case: D2PAK
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain current: 59A
Drain-source voltage: 100V
Power dissipation: 160W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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