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BSP742RIXUMA1 BSP742RIXUMA1 INFINEON TECHNOLOGIES Infineon-BSP742RI-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a304316f112290116f22466b271a6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
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IKW75N60TFKSA1 IKW75N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783C8468413D2A259&compId=IKW75N60T.pdf?ci_sign=315235c5e21e2cdac3828b7fd0114f31bfa659fe Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
auf Bestellung 32 Stücke:
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9+8.21 EUR
12+6.12 EUR
13+5.88 EUR
Mindestbestellmenge: 9
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IRFS7730TRLPBF IRFS7730TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BC569945AE469&compId=IRFS7730PBF.pdf?ci_sign=e70874db5bf86843f0fde3878b11edd0ab11038e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 825 Stücke:
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20+3.69 EUR
21+3.45 EUR
25+2.96 EUR
27+2.75 EUR
50+2.47 EUR
100+2.27 EUR
250+2.02 EUR
500+1.83 EUR
800+1.73 EUR
Mindestbestellmenge: 20
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IRFR3910TRPBF IRFR3910TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4451FC688F1A303005056AB0C4F&compId=irfr3910pbf.pdf?ci_sign=fc030bc5c689d70170e8b659f1ec026a659ed3e5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1371 Stücke:
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97+0.74 EUR
112+0.64 EUR
119+0.6 EUR
125+0.59 EUR
250+0.56 EUR
500+0.54 EUR
Mindestbestellmenge: 97
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IRFR120ZTRPBF IRFR120ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C05ABFC02CF1A303005056AB0C4F&compId=irfr120zpbf.pdf?ci_sign=6db91d95a0791cfe8a3ae22805dafb5a07efec97 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 8.7A
Kind of channel: enhancement
Power dissipation: 35W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
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BSS123NH6433XTMA1 BSS123NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 457 Stücke:
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228+0.31 EUR
329+0.22 EUR
404+0.18 EUR
457+0.16 EUR
Mindestbestellmenge: 228
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IRF5803TRPBF IRF5803TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F660770F4C8F1A303005056AB0C4F&compId=irf5803pbf.pdf?ci_sign=ea8fe42d8b837d27729d01f05b970f352b209186 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPA60R190P6XKSA1 IPA60R190P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C967A58C71BF&compId=IPA60R190P6-DTE.pdf?ci_sign=103642d66197600c23afd64a60a16e360317670a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Technology: CoolMOS™ P6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 600V
Kind of package: tube
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
40+1.79 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 31
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PVDZ172NPBF PVDZ172NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED681A961E89D5611BF&compId=pvdz172.pdf?ci_sign=57f8b5c83e175231261dae25c5b87c62d89bb814 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 1.5A
Switched voltage: 0...60V DC
Manufacturer series: PVDZ172NPbF
Relay variant: MOSFET
On-state resistance: 0.25Ω
Mounting: THT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 31 Stücke:
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6+12.21 EUR
9+8.34 EUR
10+7.88 EUR
Mindestbestellmenge: 6
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IRS21867STRPBF IRS21867STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7858F252E3D398745&compId=IRS21867SPBF.pdf?ci_sign=88dd69e07b9fd8b786cd4a2ea3106a4516073218 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 1661 Stücke:
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35+2.07 EUR
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IRFB5615PBF IRFB5615PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A92F1A6F5005056AB5A8F&compId=irfb5615pbf.pdf?ci_sign=80600ca67fd3aa93379833fd484c2b89c0c90b93 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 337 Stücke:
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42+1.72 EUR
55+1.3 EUR
69+1.04 EUR
75+0.96 EUR
Mindestbestellmenge: 42
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2EDL05N06PFXUMA1 2EDL05N06PFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD805EAF74858BF&compId=2EDL05x06xx.pdf?ci_sign=7999722de50faf3fdb5dc2fbea2cef9b3aedf4c1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Technology: EiceDRIVER™
Voltage class: 600V
auf Bestellung 1258 Stücke:
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37+1.94 EUR
42+1.73 EUR
48+1.5 EUR
51+1.42 EUR
500+1.36 EUR
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2EDN7524FXTMA1 2EDN7524FXTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89FD3A06247BE27&compId=2EDN752x-DTE.pdf?ci_sign=73ce39ec47775568bc52b8a7a41d3188f5d88d83 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Voltage class: 20V
Protection: undervoltage UVP
auf Bestellung 1430 Stücke:
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59+1.22 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 59
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IRLR7833TRPBF IRLR7833TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222808C201668F1A303005056AB0C4F&compId=irlr7833pbf.pdf?ci_sign=2863666ec9e1fdcf6394e4e87da7650719bba319 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BTS462T BTS462T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0475774F791F1A6F5005056AB5A8F&compId=BTS462T.pdf?ci_sign=1d5964edb3095262449921568cec353326577b95 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.49 EUR
32+2.29 EUR
33+2.2 EUR
36+2 EUR
Mindestbestellmenge: 29
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IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
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25+2.86 EUR
Mindestbestellmenge: 25
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FP75R12KT4 FP75R12KT4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3979250FD616749&compId=FP75R12KT4.pdf?ci_sign=0a787b86b74eb0847aa8fc8fe9a9278194481dfb Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Application: Inverter
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
1+278.85 EUR
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IRFB4229PBF IRFB4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B744F1A6F5005056AB5A8F&compId=irfb4229pbf.pdf?ci_sign=099d45bd879f089864a70a24e11bc96a170d58a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT1504WH6327XTSA1 BAT1504WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFE1F57EAAE469&compId=BAT1503WE6327HTSA1.pdf?ci_sign=92ad46a24666fc88bcb2108d1b3c891a264bbdbd Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Load current: 0.11A
Max. off-state voltage: 4V
Semiconductor structure: double series
Type of diode: Schottky rectifying
auf Bestellung 1141 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
154+0.47 EUR
173+0.41 EUR
203+0.35 EUR
260+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 129
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BTS711L1 BTS711L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B422D9468CA469&compId=BTS711L1.pdf?ci_sign=445bcc63dc051b22c43e87a03d39e4f9fd6897c6 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Mounting: SMD
Case: DSO20
On-state resistance: 50mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Supply voltage: 5...34V DC
auf Bestellung 1497 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.65 EUR
16+4.63 EUR
17+4.38 EUR
100+4.3 EUR
1000+4.26 EUR
Mindestbestellmenge: 11
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IRF300P226 IRF300P226 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5F4C3ED4E4A18&compId=IRF300P226.pdf?ci_sign=523cfb4517b457f02217f0b7903329d12f595169 Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 191nC
Kind of package: tube
Produkt ist nicht verfügbar
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IRF300P227 IRF300P227 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED887AB2225E6692A18&compId=IRF300P227.pdf?ci_sign=5c942898fab40cc8874ca0703a86883c323b92ab Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 107nC
Kind of package: tube
Produkt ist nicht verfügbar
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IRF3315STRLPBF IRF3315STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A1ADDD9CAD0E4A50&compId=irf3315spbf.pdf?ci_sign=0e1d63ccd450cb40e9a6b5e6f02a87536ad5f2e8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3703PBF IRF3703PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F60B7C9FAF0F1A303005056AB0C4F&compId=irf3703pbf.pdf?ci_sign=09e7d33b780a65393a9f6976e90f8401411e90b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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BSS123IXTSA1 BSS123IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
164+0.43 EUR
Mindestbestellmenge: 164
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BSS123NH6327XTSA1 BSS123NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7986F2E9A110B&compId=BSS123NH6327XTSA1.pdf?ci_sign=9a7693d8bcaa2b783851a85885fc7097b4b467a7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 20136 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
715+0.1 EUR
758+0.094 EUR
985+0.073 EUR
1097+0.065 EUR
1194+0.06 EUR
1303+0.055 EUR
Mindestbestellmenge: 556
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BSZ110N06NS3GATMA1 INFINEON TECHNOLOGIES BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E42CFD251E11C&compId=BSZ110N08NS5-DTE.pdf?ci_sign=f275ad3f127399cd10fc2d635f9bdc2dfb4fa4d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCR133SH6327 BCR133SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A08E45B8E469&compId=BCR133.pdf?ci_sign=f326d205106dded54591a302ba389bcff56e3c4a Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Kind of transistor: BRT
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
auf Bestellung 363 Stücke:
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363+0.2 EUR
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IR2130SPBF IR2130SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD344AF1A6F5005056AB5A8F&compId=ir2130_2132.pdf?ci_sign=f85032c07ef2df25a862e6332adad85ea7e18b34 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 58 Stücke:
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10+7.18 EUR
13+5.79 EUR
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IR2133SPBF IR2133SPBF INFINEON TECHNOLOGIES IRSDS12168-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.61 EUR
9+7.99 EUR
10+7.56 EUR
Mindestbestellmenge: 8
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IRFB4321PBF IRFB4321PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ADE1C9B8ADAEFE27&compId=IRFB4321PBF-DTE.pdf?ci_sign=ac172432e5caf556bc0aacd18b384ef70e2cb9b8 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 49 Stücke:
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20+3.59 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 20
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IRFB4332PbF IRFB4332PbF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A5AF1A6F5005056AB5A8F&compId=irfb4332pbf.pdf?ci_sign=bca76ab9566f1edc45d73ba9659a4589e67340f2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.05 EUR
31+2.36 EUR
33+2.23 EUR
50+2.14 EUR
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SPA06N80C3 SPA06N80C3 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
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16+4.46 EUR
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SPP06N80C3 SPP06N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74551DE5955EA&compId=SPP06N80C3.pdf?ci_sign=de98f335fae22c53c534d0cca62632e985b3ec96 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
26+2.76 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 24
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AIHD10N60RFATMA1 AIHD10N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA5C743CCE9820&compId=AIHD10N60RF.pdf?ci_sign=bac07947d49b12dbb3c05a8d007c6697ec7f2c24 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRS21094PBF IRS21094PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 46
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IRS21094SPBF IRS21094SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108PBF IRS2108PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108SPBF IRS2108SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
Mindestbestellmenge: 33
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IRFB3307ZPBF IRFB3307ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6DBF1A6F5005056AB5A8F&compId=irfs3307zpbf.pdf?ci_sign=745ca6cfbb3bee6d11b93d0f36d18bb15218eaea Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
27+2.66 EUR
34+2.14 EUR
50+1.46 EUR
53+1.37 EUR
Mindestbestellmenge: 24
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IRFIZ44NPBF IRFIZ44NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA4FF1A6F5005056AB5A8F&compId=irfiz44n.pdf?ci_sign=c1a240674b51848f6a75be41ec7304403b6acc63 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Gate charge: 43.3nC
On-state resistance: 24mΩ
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.9 EUR
44+1.65 EUR
50+1.44 EUR
57+1.27 EUR
100+1.11 EUR
Mindestbestellmenge: 38
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IRFR120NTRPBF IRFR120NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C03E7E09C8F1A303005056AB0C4F&compId=irfr120npbf.pdf?ci_sign=7f63985421ca573e2961fdac6eac7824a6b1dc3f description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 9.1A
Kind of channel: enhancement
Power dissipation: 39W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
auf Bestellung 1855 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
117+0.62 EUR
135+0.53 EUR
315+0.23 EUR
332+0.22 EUR
Mindestbestellmenge: 61
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IRFR6215TRPBF IRFR6215TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C517D20416F1A303005056AB0C4F&compId=irfr6215pbf.pdf?ci_sign=bf33c014ce9fd9f0e1f0849046b1f285842f7d28 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Kind of package: reel
auf Bestellung 2085 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
55+1.31 EUR
64+1.13 EUR
100+0.89 EUR
250+0.76 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.58 EUR
Mindestbestellmenge: 44
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IRFSL4410ZPBF IRFSL4410ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B398B902C5F1A303005056AB0C4F&compId=irfb4410zpbf.pdf?ci_sign=f2e7cd0a50c82652749fa28e2826325e25e7f758 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 97A
Drain-source voltage: 100V
Power dissipation: 230W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BC856SH6327 BC856SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E14F5A90A469&compId=BC856UE6327.pdf?ci_sign=c2ecd216c6b7a85380859c7690c18974de788084 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1434 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
338+0.21 EUR
516+0.14 EUR
870+0.082 EUR
920+0.078 EUR
Mindestbestellmenge: 250
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BSS139H6327XTSA1 BSS139H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77521E006811C&compId=BSS139H6327XTSA1.pdf?ci_sign=3ea77d60429e3dc7332d53b5d8ff41a954bf7f5d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
auf Bestellung 7469 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
211+0.34 EUR
376+0.19 EUR
397+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 136
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BSP170PH6327XTSA1 BSP170PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92120B826931CC&compId=BSP170PH6327XTSA1-DTE.PDF?ci_sign=540de0dc018c21b19c0ba6b0c473e3d678db565d Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
67+1.07 EUR
Mindestbestellmenge: 59
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IRS21864SPBF IRS21864SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4DA1F1A6F5005056AB5A8F&compId=irs2186pbf.pdf?ci_sign=a962ece52a67d28c2642f6bb0dfab4962e267626 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
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IGW25T120FKSA1 IGW25T120FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3665FECC20FA8&compId=IGW25T120-DTE.pdf?ci_sign=ca8598ac0668efa9a4bc236b76fc20f1cd92acf3 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.62 EUR
21+3.4 EUR
Mindestbestellmenge: 16
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IRL7833STRLPBF IRL7833STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222766451D6E7F1A303005056AB0C4F&compId=irl7833pbf.pdf?ci_sign=3f17a2919623b1c00483138df81c44cfb13be3b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Kind of package: reel
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 140W
Drain current: 150A
Produkt ist nicht verfügbar
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IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA3A9933A0411C&compId=IPA037N08N3G-DTE.pdf?ci_sign=6b115aba7aa7ae88218f5a510759582c14070b7e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Power dissipation: 41W
Drain current: 75A
Gate-source voltage: ±20V
Drain-source voltage: 80V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N04S405ATMA1 IPD90N04S405ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998BAEC1DA6D7B820&compId=IPD90N04S405.pdf?ci_sign=e5fc15d5072846873debc1d1932ae19d845a375d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Technology: OptiMOS™ T2
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 61A
Power dissipation: 65W
Pulsed drain current: 344A
Case: PG-TO252-3-313
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.2mΩ
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 IPD068P03L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFBF776EAAA745&compId=IPD068P03L3GATMA1.pdf?ci_sign=2440192ca958ac957a27cfd56d61e46ba5123ab7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain current: -70A
Drain-source voltage: -30V
On-state resistance: 11mΩ
Kind of channel: enhancement
Case: PG-TO252-3
Gate-source voltage: ±20V
Power dissipation: 100W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB065N15N3GATMA1 IPB065N15N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD43E35CE411C&compId=IPB065N15N3G-DTE.pdf?ci_sign=bab39003ca39c7c61880785944b70ac8bbebe7f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Drain current: 130A
Drain-source voltage: 150V
Power dissipation: 300W
Case: PG-TO263-3
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE7181EMXUMA1 TLE7181EMXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC7045A66088A15&compId=TLE7181EM.pdf?ci_sign=31b4483a018d90a92ae0ce3f533bdf2ef721bf75 Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7182EMXUMA1 TLE7182EMXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC71BF6EAAB8A15&compId=TLE7182EM.pdf?ci_sign=24d6ba42ecb5c5995c5642959ae1b5354a6d60ff Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB160N04S4LH1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: PG-TO263-7-3
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Technology: OptiMOS™ T2
Gate-source voltage: -16...20V
Produkt ist nicht verfügbar
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SPA07N60C3 SPA07N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD73A7A7ACFF5EA&compId=SPA07N60C3.pdf?ci_sign=11296604cba915af8d95d589c7c7d0db1b519f42 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.3 EUR
28+2.57 EUR
37+1.97 EUR
50+1.64 EUR
Mindestbestellmenge: 22
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SPP07N60C3 SPP07N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58CAF949F5A874A&compId=SPx07N60C3.pdf?ci_sign=d30e40c6cca869d635e53260e170358f87f64a9d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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BSP742RIXUMA1 Infineon-BSP742RI-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a304316f112290116f22466b271a6&ack=t
BSP742RIXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IKW75N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783C8468413D2A259&compId=IKW75N60T.pdf?ci_sign=315235c5e21e2cdac3828b7fd0114f31bfa659fe
IKW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.21 EUR
12+6.12 EUR
13+5.88 EUR
Mindestbestellmenge: 9
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IRFS7730TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BC569945AE469&compId=IRFS7730PBF.pdf?ci_sign=e70874db5bf86843f0fde3878b11edd0ab11038e
IRFS7730TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 825 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
21+3.45 EUR
25+2.96 EUR
27+2.75 EUR
50+2.47 EUR
100+2.27 EUR
250+2.02 EUR
500+1.83 EUR
800+1.73 EUR
Mindestbestellmenge: 20
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IRFR3910TRPBF pVersion=0046&contRep=ZT&docId=E221C4451FC688F1A303005056AB0C4F&compId=irfr3910pbf.pdf?ci_sign=fc030bc5c689d70170e8b659f1ec026a659ed3e5
IRFR3910TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
112+0.64 EUR
119+0.6 EUR
125+0.59 EUR
250+0.56 EUR
500+0.54 EUR
Mindestbestellmenge: 97
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IRFR120ZTRPBF pVersion=0046&contRep=ZT&docId=E221C05ABFC02CF1A303005056AB0C4F&compId=irfr120zpbf.pdf?ci_sign=6db91d95a0791cfe8a3ae22805dafb5a07efec97
IRFR120ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 8.7A
Kind of channel: enhancement
Power dissipation: 35W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSS123NH6433XTMA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 457 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
329+0.22 EUR
404+0.18 EUR
457+0.16 EUR
Mindestbestellmenge: 228
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IRF5803TRPBF pVersion=0046&contRep=ZT&docId=E21F660770F4C8F1A303005056AB0C4F&compId=irf5803pbf.pdf?ci_sign=ea8fe42d8b837d27729d01f05b970f352b209186
IRF5803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R190P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C967A58C71BF&compId=IPA60R190P6-DTE.pdf?ci_sign=103642d66197600c23afd64a60a16e360317670a
IPA60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Technology: CoolMOS™ P6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 600V
Kind of package: tube
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
40+1.79 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 31
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PVDZ172NPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED681A961E89D5611BF&compId=pvdz172.pdf?ci_sign=57f8b5c83e175231261dae25c5b87c62d89bb814
PVDZ172NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 1.5A
Switched voltage: 0...60V DC
Manufacturer series: PVDZ172NPbF
Relay variant: MOSFET
On-state resistance: 0.25Ω
Mounting: THT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.21 EUR
9+8.34 EUR
10+7.88 EUR
Mindestbestellmenge: 6
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IRS21867STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7858F252E3D398745&compId=IRS21867SPBF.pdf?ci_sign=88dd69e07b9fd8b786cd4a2ea3106a4516073218
IRS21867STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 1661 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFB5615PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A92F1A6F5005056AB5A8F&compId=irfb5615pbf.pdf?ci_sign=80600ca67fd3aa93379833fd484c2b89c0c90b93
IRFB5615PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
55+1.3 EUR
69+1.04 EUR
75+0.96 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
2EDL05N06PFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD805EAF74858BF&compId=2EDL05x06xx.pdf?ci_sign=7999722de50faf3fdb5dc2fbea2cef9b3aedf4c1
2EDL05N06PFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Technology: EiceDRIVER™
Voltage class: 600V
auf Bestellung 1258 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
42+1.73 EUR
48+1.5 EUR
51+1.42 EUR
500+1.36 EUR
Mindestbestellmenge: 37
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2EDN7524FXTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89FD3A06247BE27&compId=2EDN752x-DTE.pdf?ci_sign=73ce39ec47775568bc52b8a7a41d3188f5d88d83
2EDN7524FXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Voltage class: 20V
Protection: undervoltage UVP
auf Bestellung 1430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7833TRPBF pVersion=0046&contRep=ZT&docId=E222808C201668F1A303005056AB0C4F&compId=irlr7833pbf.pdf?ci_sign=2863666ec9e1fdcf6394e4e87da7650719bba319
IRLR7833TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS462T pVersion=0046&contRep=ZT&docId=E1C0475774F791F1A6F5005056AB5A8F&compId=BTS462T.pdf?ci_sign=1d5964edb3095262449921568cec353326577b95
BTS462T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
32+2.29 EUR
33+2.2 EUR
36+2 EUR
Mindestbestellmenge: 29
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IRF1104PBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce
IRF1104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
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FP75R12KT4 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3979250FD616749&compId=FP75R12KT4.pdf?ci_sign=0a787b86b74eb0847aa8fc8fe9a9278194481dfb
FP75R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Application: Inverter
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+278.85 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4229PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B744F1A6F5005056AB5A8F&compId=irfb4229pbf.pdf?ci_sign=099d45bd879f089864a70a24e11bc96a170d58a6
IRFB4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT1504WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFE1F57EAAE469&compId=BAT1503WE6327HTSA1.pdf?ci_sign=92ad46a24666fc88bcb2108d1b3c891a264bbdbd
BAT1504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Load current: 0.11A
Max. off-state voltage: 4V
Semiconductor structure: double series
Type of diode: Schottky rectifying
auf Bestellung 1141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
154+0.47 EUR
173+0.41 EUR
203+0.35 EUR
260+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 129
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BTS711L1 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B422D9468CA469&compId=BTS711L1.pdf?ci_sign=445bcc63dc051b22c43e87a03d39e4f9fd6897c6
BTS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Mounting: SMD
Case: DSO20
On-state resistance: 50mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Supply voltage: 5...34V DC
auf Bestellung 1497 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.65 EUR
16+4.63 EUR
17+4.38 EUR
100+4.3 EUR
1000+4.26 EUR
Mindestbestellmenge: 11
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IRF300P226 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5F4C3ED4E4A18&compId=IRF300P226.pdf?ci_sign=523cfb4517b457f02217f0b7903329d12f595169
IRF300P226
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 191nC
Kind of package: tube
Produkt ist nicht verfügbar
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IRF300P227 pVersion=0046&contRep=ZT&docId=005056AB752F1ED887AB2225E6692A18&compId=IRF300P227.pdf?ci_sign=5c942898fab40cc8874ca0703a86883c323b92ab
IRF300P227
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 107nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3315STRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A1ADDD9CAD0E4A50&compId=irf3315spbf.pdf?ci_sign=0e1d63ccd450cb40e9a6b5e6f02a87536ad5f2e8
IRF3315STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3703PBF pVersion=0046&contRep=ZT&docId=E21F60B7C9FAF0F1A303005056AB0C4F&compId=irf3703pbf.pdf?ci_sign=09e7d33b780a65393a9f6976e90f8401411e90b8
IRF3703PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSS123IXTSA1 Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46
BSS123IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
164+0.43 EUR
Mindestbestellmenge: 164
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BSS123NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7986F2E9A110B&compId=BSS123NH6327XTSA1.pdf?ci_sign=9a7693d8bcaa2b783851a85885fc7097b4b467a7
BSS123NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 20136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
715+0.1 EUR
758+0.094 EUR
985+0.073 EUR
1097+0.065 EUR
1194+0.06 EUR
1303+0.055 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BSZ110N06NS3GATMA1 BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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BSZ110N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E42CFD251E11C&compId=BSZ110N08NS5-DTE.pdf?ci_sign=f275ad3f127399cd10fc2d635f9bdc2dfb4fa4d0
BSZ110N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR133SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A08E45B8E469&compId=BCR133.pdf?ci_sign=f326d205106dded54591a302ba389bcff56e3c4a
BCR133SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Kind of transistor: BRT
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
auf Bestellung 363 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
363+0.2 EUR
Mindestbestellmenge: 363
Im Einkaufswagen  Stück im Wert von  UAH
IR2130SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD344AF1A6F5005056AB5A8F&compId=ir2130_2132.pdf?ci_sign=f85032c07ef2df25a862e6332adad85ea7e18b34
IR2130SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.18 EUR
13+5.79 EUR
Mindestbestellmenge: 10
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IR2133SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.61 EUR
9+7.99 EUR
10+7.56 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4321PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ADE1C9B8ADAEFE27&compId=IRFB4321PBF-DTE.pdf?ci_sign=ac172432e5caf556bc0aacd18b384ef70e2cb9b8
IRFB4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4332PbF pVersion=0046&contRep=ZT&docId=E1C04E5F284A5AF1A6F5005056AB5A8F&compId=irfb4332pbf.pdf?ci_sign=bca76ab9566f1edc45d73ba9659a4589e67340f2
IRFB4332PbF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.05 EUR
31+2.36 EUR
33+2.23 EUR
50+2.14 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
SPA06N80C3
SPA06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
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SPP06N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74551DE5955EA&compId=SPP06N80C3.pdf?ci_sign=de98f335fae22c53c534d0cca62632e985b3ec96
SPP06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
26+2.76 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
AIHD10N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA5C743CCE9820&compId=AIHD10N60RF.pdf?ci_sign=bac07947d49b12dbb3c05a8d007c6697ec7f2c24
AIHD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRS21094PBF description pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd
IRS21094PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRS21094SPBF pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd
IRS21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2108PBF pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082
IRS2108PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2108SPBF pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082
IRS2108SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
Mindestbestellmenge: 33
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IRFB3307ZPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6DBF1A6F5005056AB5A8F&compId=irfs3307zpbf.pdf?ci_sign=745ca6cfbb3bee6d11b93d0f36d18bb15218eaea
IRFB3307ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
27+2.66 EUR
34+2.14 EUR
50+1.46 EUR
53+1.37 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFIZ44NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA4FF1A6F5005056AB5A8F&compId=irfiz44n.pdf?ci_sign=c1a240674b51848f6a75be41ec7304403b6acc63
IRFIZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Gate charge: 43.3nC
On-state resistance: 24mΩ
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
44+1.65 EUR
50+1.44 EUR
57+1.27 EUR
100+1.11 EUR
Mindestbestellmenge: 38
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IRFR120NTRPBF description pVersion=0046&contRep=ZT&docId=E221C03E7E09C8F1A303005056AB0C4F&compId=irfr120npbf.pdf?ci_sign=7f63985421ca573e2961fdac6eac7824a6b1dc3f
IRFR120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 9.1A
Kind of channel: enhancement
Power dissipation: 39W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
auf Bestellung 1855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
117+0.62 EUR
135+0.53 EUR
315+0.23 EUR
332+0.22 EUR
Mindestbestellmenge: 61
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IRFR6215TRPBF pVersion=0046&contRep=ZT&docId=E221C517D20416F1A303005056AB0C4F&compId=irfr6215pbf.pdf?ci_sign=bf33c014ce9fd9f0e1f0849046b1f285842f7d28
IRFR6215TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Kind of package: reel
auf Bestellung 2085 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
55+1.31 EUR
64+1.13 EUR
100+0.89 EUR
250+0.76 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.58 EUR
Mindestbestellmenge: 44
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IRFSL4410ZPBF pVersion=0046&contRep=ZT&docId=E221B398B902C5F1A303005056AB0C4F&compId=irfb4410zpbf.pdf?ci_sign=f2e7cd0a50c82652749fa28e2826325e25e7f758
IRFSL4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 97A
Drain-source voltage: 100V
Power dissipation: 230W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BC856SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E14F5A90A469&compId=BC856UE6327.pdf?ci_sign=c2ecd216c6b7a85380859c7690c18974de788084
BC856SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1434 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
338+0.21 EUR
516+0.14 EUR
870+0.082 EUR
920+0.078 EUR
Mindestbestellmenge: 250
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BSS139H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77521E006811C&compId=BSS139H6327XTSA1.pdf?ci_sign=3ea77d60429e3dc7332d53b5d8ff41a954bf7f5d
BSS139H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
auf Bestellung 7469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
211+0.34 EUR
376+0.19 EUR
397+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 136
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BSP170PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92120B826931CC&compId=BSP170PH6327XTSA1-DTE.PDF?ci_sign=540de0dc018c21b19c0ba6b0c473e3d678db565d
BSP170PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
67+1.07 EUR
Mindestbestellmenge: 59
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IRS21864SPBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4DA1F1A6F5005056AB5A8F&compId=irs2186pbf.pdf?ci_sign=a962ece52a67d28c2642f6bb0dfab4962e267626
IRS21864SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
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IGW25T120FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3665FECC20FA8&compId=IGW25T120-DTE.pdf?ci_sign=ca8598ac0668efa9a4bc236b76fc20f1cd92acf3
IGW25T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.62 EUR
21+3.4 EUR
Mindestbestellmenge: 16
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IRL7833STRLPBF pVersion=0046&contRep=ZT&docId=E222766451D6E7F1A303005056AB0C4F&compId=irl7833pbf.pdf?ci_sign=3f17a2919623b1c00483138df81c44cfb13be3b9
IRL7833STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Kind of package: reel
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 140W
Drain current: 150A
Produkt ist nicht verfügbar
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IPA037N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA3A9933A0411C&compId=IPA037N08N3G-DTE.pdf?ci_sign=6b115aba7aa7ae88218f5a510759582c14070b7e
IPA037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Power dissipation: 41W
Drain current: 75A
Gate-source voltage: ±20V
Drain-source voltage: 80V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
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IPD90N04S405ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998BAEC1DA6D7B820&compId=IPD90N04S405.pdf?ci_sign=e5fc15d5072846873debc1d1932ae19d845a375d
IPD90N04S405ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Technology: OptiMOS™ T2
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 61A
Power dissipation: 65W
Pulsed drain current: 344A
Case: PG-TO252-3-313
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.2mΩ
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFBF776EAAA745&compId=IPD068P03L3GATMA1.pdf?ci_sign=2440192ca958ac957a27cfd56d61e46ba5123ab7
IPD068P03L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain current: -70A
Drain-source voltage: -30V
On-state resistance: 11mΩ
Kind of channel: enhancement
Case: PG-TO252-3
Gate-source voltage: ±20V
Power dissipation: 100W
Produkt ist nicht verfügbar
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IPB065N15N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD43E35CE411C&compId=IPB065N15N3G-DTE.pdf?ci_sign=bab39003ca39c7c61880785944b70ac8bbebe7f0
IPB065N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Drain current: 130A
Drain-source voltage: 150V
Power dissipation: 300W
Case: PG-TO263-3
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE7181EMXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC7045A66088A15&compId=TLE7181EM.pdf?ci_sign=31b4483a018d90a92ae0ce3f533bdf2ef721bf75
TLE7181EMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
Produkt ist nicht verfügbar
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TLE7182EMXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC71BF6EAAB8A15&compId=TLE7182EM.pdf?ci_sign=24d6ba42ecb5c5995c5642959ae1b5354a6d60ff
TLE7182EMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
Produkt ist nicht verfügbar
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IPB160N04S4LH1ATMA1 Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: PG-TO263-7-3
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Technology: OptiMOS™ T2
Gate-source voltage: -16...20V
Produkt ist nicht verfügbar
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SPA07N60C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD73A7A7ACFF5EA&compId=SPA07N60C3.pdf?ci_sign=11296604cba915af8d95d589c7c7d0db1b519f42
SPA07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
28+2.57 EUR
37+1.97 EUR
50+1.64 EUR
Mindestbestellmenge: 22
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SPP07N60C3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58CAF949F5A874A&compId=SPx07N60C3.pdf?ci_sign=d30e40c6cca869d635e53260e170358f87f64a9d
SPP07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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