Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149582) > Seite 2459 nach 2494
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SPW47N60C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Power dissipation: 415W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW47N60CFDFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Power dissipation: 417W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 83mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
Produkt ist nicht verfügbar |
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TLE7259-3GE | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 5.5...27V DC Interface: LIN Mounting: SMD Case: PG-DSO-8 Number of receivers: 1 Operating temperature: -40...150°C Kind of package: reel; tape Number of transmitters: 1 DC supply current: 5mA |
auf Bestellung 2436 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR024NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK Mounting: SMD Drain-source voltage: 55V Drain current: 16A Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Case: DPAK |
auf Bestellung 9681 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFR024N | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 17A Power dissipation: 45W Case: DPAK Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IR2118SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Kind of package: tube Topology: single transistor Voltage class: 600V Power: 625mW Turn-on time: 125ns Turn-off time: 105ns Output current: -420...200mA |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1018ESTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Pulsed drain current: 315A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2301SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Turn-off time: 200ns Number of channels: 2 Turn-on time: 220ns Integrated circuit features: charge pump; integrated bootstrap functionality Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 5...20V DC Output current: -0.35...0.2A Power: 625mW |
auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2304SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Turn-off time: 0.22µs Number of channels: 2 Turn-on time: 220ns Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 10...20V DC Output current: -130...60mA Power: 625mW |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2308SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Turn-off time: 200ns Number of channels: 2 Turn-on time: 220ns Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 10...20V DC Output current: -0.35...0.2A Power: 625mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF8707TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8 Kind of package: reel; tape Case: SO8 Drain-source voltage: 30V Drain current: 9.1A On-state resistance: 17.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 9.3nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 88A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS7440TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 208W Case: D2PAK Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKCM30F60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: PG-MDIP24 Output current: -20...20A Mounting: THT Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Power dissipation: 30.3W Integrated circuit features: integrated bootstrap functionality Protection: anti-overload OPP; undervoltage UVP Technology: ClPOS™ Mini; TRENCHSTOP™ Topology: IGBT three-phase bridge; thermistor Operating temperature: -40...125°C Voltage class: 600V |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9317TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8 Mounting: SMD Drain current: -16A Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhancement Case: SO8 Drain-source voltage: -30V |
Produkt ist nicht verfügbar |
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ICE2PCS01GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Frequency: 50...250kHz Case: PG-DSO-8 Mounting: SMD Operating temperature: -40...125°C Topology: boost Input voltage: 80...265V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V DC Output current: -1.5...2A |
auf Bestellung 535 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE2PCS05GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Frequency: 20...250kHz Case: PG-DSO-8 Mounting: SMD Operating temperature: -40...125°C Topology: boost Input voltage: 85...265V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V DC Output current: -1.5...2A |
auf Bestellung 2473 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB7437PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 250A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IR21834SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW30N120R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 165W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 235nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Turn-off time: 363ns Technology: TRENCHSTOP™ RC |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUC60N06S5L073ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Case: PG-TDSON-8 Drain-source voltage: 60V Drain current: 15A On-state resistance: 9.8mΩ Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22.6nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 168A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IAUC60N06S5N074ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Case: PG-TDSON-8 Drain-source voltage: 60V Drain current: 15A On-state resistance: 9mΩ Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 168A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IPA060N06NM5SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP Type of transistor: N-MOSFET Case: TO220FP Drain-source voltage: 60V Drain current: 40A On-state resistance: 6mΩ Power dissipation: 33W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 224A Mounting: THT |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA060N06NXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP Type of transistor: N-MOSFET Case: TO220FP Drain-source voltage: 60V Drain current: 45A On-state resistance: 6mΩ Power dissipation: 33W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPP060N06NAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3 Type of transistor: N-MOSFET Case: PG-TO220-3 Drain-source voltage: 60V Drain current: 80A On-state resistance: 6mΩ Power dissipation: 107W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BGS12P2L6E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz Type of integrated circuit: RF switch Output configuration: SPDT Case: TSLP-6-4 Supply voltage: 1.65...3.4V DC Mounting: SMD Bandwidth: 0.05...6GHz Application: telecommunication |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF9Z24NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -12A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: THT Kind of channel: enhancement Technology: HEXFET® Gate charge: 12.7nC Kind of package: tube |
auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9Z24NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -8.5A Pulsed drain current: -48A Power dissipation: 45W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: SMD Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAT6404E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: double series Max. forward impulse current: 0.8A Power dissipation: 0.25W |
auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR3410TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 1968 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR3410TRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS127H6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Drain-source voltage: 600V Drain current: 0.021A On-state resistance: 500Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 4781 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Case: SC79 Max. off-state voltage: 150V Max. forward voltage: 1.1V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW20N120R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 144W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-off time: 440ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7317TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 6.6/-5.3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 29/58mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BTS5090-1EJA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DSO8 On-state resistance: 90mΩ Supply voltage: 13.5V DC Technology: PROFET™+ 12V |
auf Bestellung 2259 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2110SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 155ns Turn-off time: 137ns |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2117SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRS2118PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRS2118SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR116SH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 150MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SC74 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
auf Bestellung 4750 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV70UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: common cathode; double x2 Case: SC74 Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
auf Bestellung 9024 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV99UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: double series x2 Case: SC74 Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
Produkt ist nicht verfügbar |
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BAW101E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape Max. off-state voltage: 300V Load current: 0.25A Semiconductor structure: double independent Reverse recovery time: 1µs Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT143 |
auf Bestellung 1745 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT165E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A Type of diode: Schottky rectifying Max. off-state voltage: 40V Load current: 0.75A Case: SOD323 Mounting: SMD Semiconductor structure: single diode |
auf Bestellung 11596 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS4004E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double series Max. forward impulse current: 0.2A Power dissipation: 0.25W |
auf Bestellung 7240 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS4005E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common cathode; double Max. forward impulse current: 0.2A Power dissipation: 0.25W |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS4007E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW Type of diode: Schottky switching Case: SOT143 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double independent Max. forward impulse current: 0.2A Power dissipation: 0.25W |
auf Bestellung 895 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT1503WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 4V; 0.11A; 100mW Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 4V Load current: 0.11A Semiconductor structure: single diode Power dissipation: 0.1W |
auf Bestellung 606 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBTA42E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 70MHz |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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BC846UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SC74 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SC74 Mounting: SMD Frequency: 250MHz |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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BC856UE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SC74 Mounting: SMD Frequency: 250MHz |
auf Bestellung 988 Stücke: Lieferzeit 14-21 Tag (e) |
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BFR106E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23 Case: SOT23 Frequency: 5GHz Collector-emitter voltage: 16V Collector current: 0.21A Type of transistor: NPN Power dissipation: 0.7W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: RF Mounting: SMD |
auf Bestellung 1801 Stücke: Lieferzeit 14-21 Tag (e) |
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BFR92PE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 45mA Power dissipation: 0.28W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 5GHz |
auf Bestellung 5769 Stücke: Lieferzeit 14-21 Tag (e) |
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BSR302NL6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 Drain-source voltage: 30V Drain current: 3.7A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SC59 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BFP193E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 80mA Power dissipation: 0.58W Case: SOT143 Current gain: 70...140 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz Kind of transistor: RF |
auf Bestellung 937 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR133E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Base resistor: 10kΩ Base-emitter resistor: 10kΩ Power dissipation: 0.2W Frequency: 130MHz |
auf Bestellung 1420 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBTA06E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR158E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Mounting: SMD Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 7838 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6403WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Mounting: SMD Case: SOD323 Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF |
auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW47N60C3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 18.33 EUR |
6+ | 12.51 EUR |
SPW47N60CFDFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE7259-3GE |
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Hersteller: INFINEON TECHNOLOGIES
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...27V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 5mA
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...27V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 5mA
auf Bestellung 2436 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.37 EUR |
58+ | 1.24 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
IRFR024NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Mounting: SMD
Drain-source voltage: 55V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Mounting: SMD
Drain-source voltage: 55V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Case: DPAK
auf Bestellung 9681 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
113+ | 0.63 EUR |
130+ | 0.55 EUR |
138+ | 0.52 EUR |
143+ | 0.50 EUR |
AUIRFR024N |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2118SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Topology: single transistor
Voltage class: 600V
Power: 625mW
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Topology: single transistor
Voltage class: 600V
Power: 625mW
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.86 EUR |
50+ | 1.46 EUR |
52+ | 1.39 EUR |
55+ | 1.32 EUR |
IRF1018ESTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
49+ | 1.48 EUR |
83+ | 0.86 EUR |
88+ | 0.82 EUR |
IR2301SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Output current: -0.35...0.2A
Power: 625mW
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.82 EUR |
44+ | 1.64 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
IR2304SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 0.22µs
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -130...60mA
Power: 625mW
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 0.22µs
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -130...60mA
Power: 625mW
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.46 EUR |
IR2308SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Power: 625mW
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 200ns
Number of channels: 2
Turn-on time: 220ns
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 10...20V DC
Output current: -0.35...0.2A
Power: 625mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF8707TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 30V
Drain current: 9.1A
On-state resistance: 17.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 9.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 88A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 30V
Drain current: 9.1A
On-state resistance: 17.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 9.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 88A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS7440TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKCM30F60GAXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -20...20A
Mounting: THT
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 30.3W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Operating temperature: -40...125°C
Voltage class: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -20...20A
Mounting: THT
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 30.3W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Operating temperature: -40...125°C
Voltage class: 600V
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 24.42 EUR |
IRF9317TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Mounting: SMD
Drain current: -16A
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Case: SO8
Drain-source voltage: -30V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Mounting: SMD
Drain current: -16A
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Case: SO8
Drain-source voltage: -30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ICE2PCS01GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 535 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.77 EUR |
46+ | 1.59 EUR |
54+ | 1.33 EUR |
57+ | 1.26 EUR |
500+ | 1.22 EUR |
ICE2PCS05GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 2473 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.57 EUR |
58+ | 1.24 EUR |
79+ | 0.91 EUR |
84+ | 0.86 EUR |
1000+ | 0.83 EUR |
IRFB7437PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 2.97 EUR |
IR21834SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
IHW30N120R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.20 EUR |
23+ | 3.13 EUR |
25+ | 2.96 EUR |
60+ | 2.92 EUR |
120+ | 2.85 EUR |
IAUC60N06S5L073ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9.8mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.6nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 168A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9.8mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.6nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 168A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUC60N06S5N074ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 168A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 15A
On-state resistance: 9mΩ
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 168A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA060N06NM5SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 224A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 224A
Mounting: THT
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
42+ | 1.72 EUR |
48+ | 1.50 EUR |
55+ | 1.30 EUR |
59+ | 1.23 EUR |
IPA060N06NXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 6mΩ
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP060N06NAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 6mΩ
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 6mΩ
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BGS12P2L6E6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Case: TSLP-6-4
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Case: TSLP-6-4
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF9Z24NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 12.7nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 12.7nC
Kind of package: tube
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
176+ | 0.41 EUR |
186+ | 0.38 EUR |
IRF9Z24NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT6404E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
126+ | 0.57 EUR |
IRLR3410TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1968 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.32 EUR |
77+ | 0.93 EUR |
159+ | 0.45 EUR |
168+ | 0.43 EUR |
IRLR3410TRRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS127H6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 500Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 500Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4781 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
300+ | 0.24 EUR |
376+ | 0.19 EUR |
443+ | 0.16 EUR |
511+ | 0.14 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |
BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
334+ | 0.21 EUR |
556+ | 0.13 EUR |
650+ | 0.11 EUR |
685+ | 0.10 EUR |
IHW20N120R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.31 EUR |
22+ | 3.35 EUR |
23+ | 3.16 EUR |
IRF7317TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS5090-1EJA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
auf Bestellung 2259 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.97 EUR |
38+ | 1.93 EUR |
61+ | 1.19 EUR |
64+ | 1.13 EUR |
1000+ | 1.09 EUR |
IRS2110SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.60 EUR |
21+ | 3.47 EUR |
22+ | 3.29 EUR |
IRS2117SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRS2118PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRS2118SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR116SH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
527+ | 0.14 EUR |
589+ | 0.12 EUR |
735+ | 0.10 EUR |
BAS16UE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
455+ | 0.16 EUR |
491+ | 0.15 EUR |
511+ | 0.14 EUR |
BAV70UE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 9024 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2977+ | 0.02 EUR |
BAV99UE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAW101E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Max. off-state voltage: 300V
Load current: 0.25A
Semiconductor structure: double independent
Reverse recovery time: 1µs
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT143
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Max. off-state voltage: 300V
Load current: 0.25A
Semiconductor structure: double independent
Reverse recovery time: 1µs
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT143
auf Bestellung 1745 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
375+ | 0.19 EUR |
455+ | 0.16 EUR |
520+ | 0.14 EUR |
570+ | 0.13 EUR |
605+ | 0.12 EUR |
BAT165E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 0.75A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 0.75A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
auf Bestellung 11596 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
290+ | 0.25 EUR |
345+ | 0.21 EUR |
374+ | 0.19 EUR |
676+ | 0.11 EUR |
715+ | 0.10 EUR |
9000+ | 0.10 EUR |
BAS4004E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 7240 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
407+ | 0.18 EUR |
557+ | 0.13 EUR |
1076+ | 0.07 EUR |
1139+ | 0.06 EUR |
BAS4005E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
407+ | 0.18 EUR |
569+ | 0.13 EUR |
667+ | 0.11 EUR |
834+ | 0.09 EUR |
1071+ | 0.07 EUR |
1132+ | 0.06 EUR |
BAS4007E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.30 EUR |
365+ | 0.20 EUR |
459+ | 0.16 EUR |
511+ | 0.14 EUR |
582+ | 0.12 EUR |
642+ | 0.11 EUR |
BAT1503WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 606 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
135+ | 0.53 EUR |
194+ | 0.37 EUR |
278+ | 0.26 EUR |
295+ | 0.24 EUR |
SMBTA42E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
355+ | 0.20 EUR |
481+ | 0.15 EUR |
550+ | 0.13 EUR |
893+ | 0.08 EUR |
944+ | 0.08 EUR |
BC846UE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
BC856UE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
410+ | 0.17 EUR |
521+ | 0.14 EUR |
575+ | 0.12 EUR |
BFR106E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Case: SOT23
Frequency: 5GHz
Collector-emitter voltage: 16V
Collector current: 0.21A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Case: SOT23
Frequency: 5GHz
Collector-emitter voltage: 16V
Collector current: 0.21A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
auf Bestellung 1801 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
236+ | 0.30 EUR |
309+ | 0.23 EUR |
447+ | 0.16 EUR |
472+ | 0.15 EUR |
BFR92PE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 5769 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
329+ | 0.22 EUR |
488+ | 0.15 EUR |
847+ | 0.09 EUR |
895+ | 0.08 EUR |
BSR302NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFP193E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Kind of transistor: RF
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Kind of transistor: RF
auf Bestellung 937 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
277+ | 0.26 EUR |
363+ | 0.20 EUR |
521+ | 0.14 EUR |
550+ | 0.13 EUR |
BCR133E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Frequency: 130MHz
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
955+ | 0.08 EUR |
1087+ | 0.07 EUR |
1417+ | 0.05 EUR |
SMBTA06E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR158E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 7838 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
969+ | 0.07 EUR |
1112+ | 0.06 EUR |
1257+ | 0.06 EUR |
1450+ | 0.05 EUR |
1534+ | 0.05 EUR |
3000+ | 0.05 EUR |
BAR6403WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 1880 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
618+ | 0.12 EUR |
667+ | 0.11 EUR |
695+ | 0.10 EUR |