Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149618) > Seite 2464 nach 2494
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BCR185WH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SOT323 Frequency: 200MHz |
auf Bestellung 2230 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SPP80P06PHXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -80A Power dissipation: 340W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRS2186STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
auf Bestellung 1467 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
AIGW50N65H5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 116nC Kind of package: tube Manufacturer series: H5 Technology: TRENCHSTOP™ 5 Turn-on time: 33ns Turn-off time: 184ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BGS12SN6E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz Type of integrated circuit: RF switch Output configuration: SPDT Number of channels: 2 Case: TSNP6 Supply voltage: 1.8...3.5V DC Mounting: SMD Bandwidth: 0.1...6GHz Application: telecommunication |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
TLE4207GXUMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14 Operating voltage: 8...18V DC Mounting: SMD Operating temperature: -40...150°C Output current: 0.8A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: fault detection Kind of package: reel; tape Kind of integrated circuit: IMC; motor controller Topology: MOSFET half-bridge Case: PG-DSO-14 |
auf Bestellung 2444 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
AIKP20N60CTAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 156W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 0.12µC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 316 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
AIKB20N60CTATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 156W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 0.12µC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IKQ120N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 833W Case: PG-TO247-3-46 Mounting: THT Kind of package: tube Gate charge: 703nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 480A Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IKQ120N60TAXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 833W Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 772nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 480A Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
AIKQ120N60CTXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 833W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 480A Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode Gate charge: 772nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
TT122N22KOFHPSA2 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 122A Case: BG-PB34-1 Max. forward voltage: 1.95V Max. forward impulse current: 3.3kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRFR15N20DTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK Drain-source voltage: 200V Drain current: 17A Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Mounting: SMD Case: DPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IPB073N15N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 81A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 49nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
XMC1202T028X0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH Case: PG-TSSOP-28 Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 26 Number of 16bit timers: 4 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 10 Kind of architecture: Cortex M0 Family: XMC1200 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
XMC1202T028X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH Case: PG-TSSOP-28 Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 26 Number of 16bit timers: 4 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 10 Kind of architecture: Cortex M0 Family: XMC1200 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
AIHD10N60RATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Power dissipation: 150W Case: DPAK Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ RC Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 30A Turn-on time: 24ns Turn-off time: 331ns Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRFB4610PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 501 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFB4620PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Drain-source voltage: 200V Drain current: 25A On-state resistance: 72.5mΩ Type of transistor: N-MOSFET Power dissipation: 144W Polarisation: unipolar Kind of package: tube Gate charge: 25nC Kind of channel: enhancement Gate-source voltage: ±20V Technology: HEXFET® Mounting: THT Case: TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BFP183WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343 Kind of package: reel; tape Collector-emitter voltage: 12V Current gain: 70...140 Collector current: 65mA Type of transistor: NPN Power dissipation: 0.45W Polarisation: bipolar Kind of transistor: RF Mounting: SMD Case: SOT343 Frequency: 8GHz |
auf Bestellung 2353 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BFP196WH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343 Kind of package: reel; tape Collector-emitter voltage: 20V Collector current: 0.15A Type of transistor: NPN Power dissipation: 0.7W Polarisation: bipolar Kind of transistor: RF Mounting: SMD Case: SOT343 Frequency: 5GHz |
auf Bestellung 5753 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BFR181WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323 Kind of package: reel; tape Collector-emitter voltage: 12V Collector current: 20mA Type of transistor: NPN Power dissipation: 0.175W Polarisation: bipolar Kind of transistor: RF Mounting: SMD Case: SOT323 Frequency: 8GHz |
auf Bestellung 2240 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
SPD04N80C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 12A Power dissipation: 63W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
SPP04N80C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 63W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRFB7530PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 295A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 274nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFP7530PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 281A Power dissipation: 341W Case: TO247AC Mounting: THT Kind of channel: enhancement Trade name: StrongIRFET On-state resistance: 2mΩ Kind of package: tube Gate charge: 274nC Gate-source voltage: ±20V |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSL316CH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 1.4/-1.5A Power dissipation: 0.5W Case: PG-TSOP-6 Gate-source voltage: ±20V On-state resistance: 0.191/0.177Ω Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 2 |
auf Bestellung 2032 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IPA030N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 79A; 41W; TO220FP Mounting: THT Case: TO220FP Drain-source voltage: 100V Drain current: 79A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BSS209PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323 Drain-source voltage: -20V Drain current: -630mA On-state resistance: 0.55Ω Type of transistor: P-MOSFET Power dissipation: 0.3W Polarisation: unipolar Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: PG-SOT-323 |
auf Bestellung 4054 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSP171PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Mounting: SMD Case: PG-SOT223 Drain-source voltage: -60V Drain current: -1.9A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 213 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFB7440PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 208A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET |
auf Bestellung 213 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFR4104TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 119A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1361 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BAT6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SC79; SMD; 40V; 0.25A; 250mW Power dissipation: 0.25W Case: SC79 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Max. forward impulse current: 0.8A Type of diode: Schottky rectifying |
auf Bestellung 13698 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
TLE4906KHTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT Type of sensor: Hall Case: SC59 Range of detectable magnetic field: 5...13.5mT Supply voltage: 2.7...18V DC Operating temperature: -40...150°C Kind of sensor: unipolar Mounting: SMT |
auf Bestellung 1101 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
TLE4935L | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT Type of sensor: Hall Case: P-SSO-3-2 Range of detectable magnetic field: -20...20mT Supply voltage: 3.8...24V DC Operating temperature: -40...150°C Kind of sensor: latch Mounting: THT |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSS816NWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323 Drain-source voltage: 20V Drain current: 1.4A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SOT323 |
auf Bestellung 3579 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRS4426SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -3.3...2.3A Power: 625mW Number of channels: 2 Supply voltage: 6...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Turn-on time: 50ns Turn-off time: 50ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BAT1704WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW Power dissipation: 0.15W Type of diode: Schottky switching Mounting: SMD Case: SOT323 Max. off-state voltage: 4V Load current: 0.13A Semiconductor structure: double series |
auf Bestellung 192 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BFP405H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343 Case: SOT343 Frequency: 25GHz Collector-emitter voltage: 4.5V Current gain: 90...130 Collector current: 25mA Type of transistor: NPN Power dissipation: 75mW Polarisation: bipolar Kind of package: reel; tape Technology: SIEGET™ Kind of transistor: RF Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRFS4227TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 62A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRFS4229TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 45A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRFS4321TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 478 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IKW25T120FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3 Mounting: THT Case: TO247-3 Power dissipation: 190W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 155nC Gate-emitter voltage: ±20V Collector current: 50A Collector-emitter voltage: 1.2kV Pulsed collector current: 75A Type of transistor: IGBT |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
PVT322PBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω Type of relay: solid state Operating temperature: -40...85°C Case: DIP8 On-state resistance: 10Ω Contacts configuration: DPST-NO Max. operating current: 0.5A Mounting: THT Relay variant: MOSFET Control current: 2...25mA Operate time: 3ms Release time: 0.5ms Switched voltage: 0...250V AC; 0...250V DC Manufacturer series: PVT322PbF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRFU4510PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 63A Case: IPAK Mounting: THT Kind of channel: enhancement Power dissipation: 143W Technology: HEXFET® |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFHM830TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3 Mounting: SMD Case: PQFN3.3X3.3 Kind of package: reel Power dissipation: 2.7W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: 30V Drain current: 21A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BSS223PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323 Drain-source voltage: -20V Drain current: -0.39A On-state resistance: 1.2Ω Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: PG-SOT-323 |
auf Bestellung 1265 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFS4310TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRFS4510TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Case: D2PAK Mounting: SMD Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Pulsed drain current: 250A Drain current: 43A On-state resistance: 13.9mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IRFS4615TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRFS7437TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 684 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IPP126N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 100V Drain current: 58A On-state resistance: 12.6mΩ Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSC252N10NSFGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 78W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRLR6225TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 100A Power dissipation: 63W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BFP650H6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343 Mounting: SMD Case: SOT343 Kind of package: reel; tape Kind of transistor: RF Frequency: 42GHz Collector-emitter voltage: 13V Collector current: 0.15A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Technology: SiGe:C |
auf Bestellung 2583 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRF7410TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -16A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRFB7446PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 123A Power dissipation: 99W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET |
auf Bestellung 441 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFH7440TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6 Case: PQFN5X6 Mounting: SMD Kind of package: reel Polarisation: unipolar Gate charge: 92nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Trade name: StrongIRFET Drain-source voltage: 40V Drain current: 85A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 104W |
auf Bestellung 3388 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IPP147N12N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 120V Drain current: 56A On-state resistance: 14.7mΩ Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRF7832TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 614 Stücke: Lieferzeit 14-21 Tag (e) |
|
BCR185WH6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323
Frequency: 200MHz
auf Bestellung 2230 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
807+ | 0.09 EUR |
898+ | 0.08 EUR |
1017+ | 0.07 EUR |
1153+ | 0.06 EUR |
1220+ | 0.06 EUR |
SPP80P06PHXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -80A
Power dissipation: 340W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -80A
Power dissipation: 340W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.50 EUR |
25+ | 2.95 EUR |
26+ | 2.79 EUR |
50+ | 2.69 EUR |
IRS2186STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 1467 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.33 EUR |
38+ | 1.92 EUR |
46+ | 1.57 EUR |
49+ | 1.49 EUR |
1000+ | 1.43 EUR |
AIGW50N65H5XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 33ns
Turn-off time: 184ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 33ns
Turn-off time: 184ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BGS12SN6E6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE4207GXUMA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Output current: 0.8A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: fault detection
Kind of package: reel; tape
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Output current: 0.8A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: fault detection
Kind of package: reel; tape
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
auf Bestellung 2444 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.00 EUR |
39+ | 1.86 EUR |
41+ | 1.77 EUR |
100+ | 1.73 EUR |
AIKP20N60CTAKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 316 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.29 EUR |
16+ | 4.68 EUR |
18+ | 4.05 EUR |
19+ | 3.83 EUR |
250+ | 3.69 EUR |
AIKB20N60CTATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 0.12µC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ120N60TXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 703nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 703nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ120N60TAXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 772nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 772nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AIKQ120N60CTXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TT122N22KOFHPSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR15N20DTRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Drain-source voltage: 200V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Drain-source voltage: 200V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB073N15N5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC1202T028X0032ABXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-28
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-28
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC1202T028X0064ABXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-28
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-28
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 10
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AIHD10N60RATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 24ns
Turn-off time: 331ns
Collector-emitter voltage: 600V
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 24ns
Turn-off time: 331ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB4610PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.77 EUR |
31+ | 2.32 EUR |
57+ | 1.27 EUR |
59+ | 1.22 EUR |
IRFB4620PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 72.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Kind of package: tube
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: HEXFET®
Mounting: THT
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 72.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Kind of package: tube
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: HEXFET®
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFP183WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Kind of package: reel; tape
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 65mA
Type of transistor: NPN
Power dissipation: 0.45W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Kind of package: reel; tape
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 65mA
Type of transistor: NPN
Power dissipation: 0.45W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Frequency: 8GHz
auf Bestellung 2353 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
382+ | 0.19 EUR |
432+ | 0.17 EUR |
468+ | 0.15 EUR |
500+ | 0.14 EUR |
550+ | 0.13 EUR |
BFP196WH6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Kind of package: reel; tape
Collector-emitter voltage: 20V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Frequency: 5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Kind of package: reel; tape
Collector-emitter voltage: 20V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.7W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Frequency: 5GHz
auf Bestellung 5753 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
197+ | 0.36 EUR |
317+ | 0.23 EUR |
658+ | 0.11 EUR |
705+ | 0.10 EUR |
BFR181WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Kind of package: reel; tape
Collector-emitter voltage: 12V
Collector current: 20mA
Type of transistor: NPN
Power dissipation: 0.175W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT323
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Kind of package: reel; tape
Collector-emitter voltage: 12V
Collector current: 20mA
Type of transistor: NPN
Power dissipation: 0.175W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT323
Frequency: 8GHz
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
258+ | 0.28 EUR |
376+ | 0.19 EUR |
435+ | 0.16 EUR |
506+ | 0.14 EUR |
658+ | 0.11 EUR |
705+ | 0.10 EUR |
SPD04N80C3ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPP04N80C3 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB7530PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.26 EUR |
35+ | 2.04 EUR |
IRFP7530PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Kind of package: tube
Gate charge: 274nC
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Kind of package: tube
Gate charge: 274nC
Gate-source voltage: ±20V
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.03 EUR |
22+ | 3.40 EUR |
23+ | 3.23 EUR |
50+ | 3.09 EUR |
BSL316CH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.4/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 0.191/0.177Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.4/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 0.191/0.177Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2032 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
188+ | 0.38 EUR |
239+ | 0.30 EUR |
246+ | 0.29 EUR |
388+ | 0.18 EUR |
410+ | 0.17 EUR |
IPA030N10N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; 41W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 100V
Drain current: 79A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; 41W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 100V
Drain current: 79A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS209PWH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -630mA
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -630mA
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
auf Bestellung 4054 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
491+ | 0.15 EUR |
578+ | 0.12 EUR |
738+ | 0.10 EUR |
1071+ | 0.07 EUR |
1132+ | 0.06 EUR |
BSP171PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
94+ | 0.76 EUR |
135+ | 0.53 EUR |
197+ | 0.36 EUR |
213+ | 0.33 EUR |
IRFB7440PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.86 EUR |
61+ | 1.17 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
100+ | 0.84 EUR |
IRFR4104TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1361 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.50 EUR |
57+ | 1.27 EUR |
72+ | 1.00 EUR |
76+ | 0.94 EUR |
500+ | 0.92 EUR |
BAT6402VH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 0.8A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 0.8A
Type of diode: Schottky rectifying
auf Bestellung 13698 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
261+ | 0.27 EUR |
307+ | 0.23 EUR |
500+ | 0.14 EUR |
848+ | 0.08 EUR |
893+ | 0.08 EUR |
TLE4906KHTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Kind of sensor: unipolar
Mounting: SMT
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Kind of sensor: unipolar
Mounting: SMT
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
68+ | 1.06 EUR |
132+ | 0.54 EUR |
139+ | 0.51 EUR |
TLE4935L |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Kind of sensor: latch
Mounting: THT
Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Kind of sensor: latch
Mounting: THT
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.62 EUR |
72+ | 1.00 EUR |
76+ | 0.94 EUR |
BSS816NWH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Drain-source voltage: 20V
Drain current: 1.4A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT323
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Drain-source voltage: 20V
Drain current: 1.4A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT323
auf Bestellung 3579 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
407+ | 0.18 EUR |
558+ | 0.13 EUR |
1214+ | 0.06 EUR |
1283+ | 0.06 EUR |
IRS4426SPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -3.3...2.3A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -3.3...2.3A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT1704WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
155+ | 0.46 EUR |
192+ | 0.37 EUR |
BFP405H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Case: SOT343
Frequency: 25GHz
Collector-emitter voltage: 4.5V
Current gain: 90...130
Collector current: 25mA
Type of transistor: NPN
Power dissipation: 75mW
Polarisation: bipolar
Kind of package: reel; tape
Technology: SIEGET™
Kind of transistor: RF
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Case: SOT343
Frequency: 25GHz
Collector-emitter voltage: 4.5V
Current gain: 90...130
Collector current: 25mA
Type of transistor: NPN
Power dissipation: 75mW
Polarisation: bipolar
Kind of package: reel; tape
Technology: SIEGET™
Kind of transistor: RF
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS4227TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS4229TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS4321TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.55 EUR |
40+ | 1.80 EUR |
43+ | 1.70 EUR |
IKW25T120FKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 155nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 155nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 1.2kV
Pulsed collector current: 75A
Type of transistor: IGBT
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.92 EUR |
12+ | 6.33 EUR |
15+ | 4.96 EUR |
16+ | 4.69 EUR |
PVT322PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 10Ω
Contacts configuration: DPST-NO
Max. operating current: 0.5A
Mounting: THT
Relay variant: MOSFET
Control current: 2...25mA
Operate time: 3ms
Release time: 0.5ms
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP8
On-state resistance: 10Ω
Contacts configuration: DPST-NO
Max. operating current: 0.5A
Mounting: THT
Relay variant: MOSFET
Control current: 2...25mA
Operate time: 3ms
Release time: 0.5ms
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFU4510PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Power dissipation: 143W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Power dissipation: 143W
Technology: HEXFET®
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
57+ | 1.27 EUR |
66+ | 1.09 EUR |
71+ | 1.02 EUR |
150+ | 1.00 EUR |
IRFHM830TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Case: PQFN3.3X3.3
Kind of package: reel
Power dissipation: 2.7W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Case: PQFN3.3X3.3
Kind of package: reel
Power dissipation: 2.7W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS223PWH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
391+ | 0.18 EUR |
455+ | 0.16 EUR |
516+ | 0.14 EUR |
589+ | 0.12 EUR |
962+ | 0.07 EUR |
1000+ | 0.07 EUR |
IRFS4310TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS4510TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Case: D2PAK
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 43A
On-state resistance: 13.9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Case: D2PAK
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 43A
On-state resistance: 13.9mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS4615TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS7437TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.55 EUR |
24+ | 3.05 EUR |
35+ | 2.10 EUR |
36+ | 1.99 EUR |
IPP126N10N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 100V
Drain current: 58A
On-state resistance: 12.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 100V
Drain current: 58A
On-state resistance: 12.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.04 EUR |
BSC252N10NSFGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR6225TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
BFP650H6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 42GHz
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Technology: SiGe:C
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 42GHz
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Technology: SiGe:C
auf Bestellung 2583 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
105+ | 0.68 EUR |
119+ | 0.60 EUR |
137+ | 0.52 EUR |
145+ | 0.49 EUR |
IRF7410TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB7446PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 441 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
64+ | 1.13 EUR |
81+ | 0.89 EUR |
87+ | 0.83 EUR |
250+ | 0.80 EUR |
IRFH7440TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Gate charge: 92nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Drain-source voltage: 40V
Drain current: 85A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Gate charge: 92nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Drain-source voltage: 40V
Drain current: 85A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
auf Bestellung 3388 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.67 EUR |
46+ | 1.59 EUR |
53+ | 1.37 EUR |
55+ | 1.30 EUR |
500+ | 1.29 EUR |
1000+ | 1.26 EUR |
IPP147N12N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 56A
On-state resistance: 14.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 56A
On-state resistance: 14.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
40+ | 1.79 EUR |
IRF7832TRPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.52 EUR |
57+ | 1.26 EUR |
86+ | 0.83 EUR |
91+ | 0.79 EUR |
500+ | 0.78 EUR |