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IRFH4210DTRPBF IRFH4210DTRPBF INFINEON TECHNOLOGIES irfh4210dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Trade name: FastIRFET
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IRFH5210TRPBF IRFH5210TRPBF INFINEON TECHNOLOGIES irfh5210pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8311TRPBF IRFH8311TRPBF INFINEON TECHNOLOGIES IRFH8311TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH5020TRPBF IRFH5020TRPBF INFINEON TECHNOLOGIES irfh5020pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH5025TRPBF IRFH5025TRPBF INFINEON TECHNOLOGIES irfh5025pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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CY7C1399BN-12VXI INFINEON TECHNOLOGIES Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
Part status: Not recommended for new designs
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CY7C1399BN-12VXIT INFINEON TECHNOLOGIES Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Part status: Not recommended for new designs
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CY7C199D-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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BAT5403WE6327HTSA1 BAT5403WE6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; 230mW
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
auf Bestellung 4473 Stücke:
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209+0.34 EUR
291+0.25 EUR
366+0.20 EUR
408+0.18 EUR
858+0.08 EUR
908+0.08 EUR
3000+0.08 EUR
Mindestbestellmenge: 209
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TZ400N26KOFHPSA1 TZ400N26KOFHPSA1 INFINEON TECHNOLOGIES TZ400N26KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.6kV; 400A; BG-PB501-1
Semiconductor structure: single thyristor
Gate current: 300mA
Max. forward impulse current: 13kA
Case: BG-PB501-1
Max. forward voltage: 1.88V
Max. off-state voltage: 2.6kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Load current: 400A
Type of module: thyristor
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IHW30N135R3FKSA1 IHW30N135R3FKSA1 INFINEON TECHNOLOGIES DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES irf9362pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BAS3010A03WE6327HTSA1 BAS3010A03WE6327HTSA1 INFINEON TECHNOLOGIES BAS3010A03WE6327HT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
auf Bestellung 1515 Stücke:
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167+0.43 EUR
230+0.31 EUR
309+0.23 EUR
353+0.20 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 167
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IPB026N06NATMA1 IPB026N06NATMA1 INFINEON TECHNOLOGIES IPB026N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
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BAT1804E6327HTSA1 BAT1804E6327HTSA1 INFINEON TECHNOLOGIES BAT18.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
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BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 INFINEON TECHNOLOGIES BSZ130N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPD70N10S3L12ATMA1 INFINEON TECHNOLOGIES Infineon-IPD70N10S3L-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043183a955501188996d3f9675c&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 280A
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2ED21091S06FXUMA1 2ED21091S06FXUMA1 INFINEON TECHNOLOGIES Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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IPB029N06N3GATMA1 IPB029N06N3GATMA1 INFINEON TECHNOLOGIES IPB029N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
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IPD95R750P7ATMA1 IPD95R750P7ATMA1 INFINEON TECHNOLOGIES IPD95R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
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CY14E116L-ZS25XI INFINEON TECHNOLOGIES ?docID=50503 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 25ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Kind of interface: parallel
Memory: 16Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
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IPD50N04S408ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Drain current: 47A
On-state resistance: 7.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 46W
Polarisation: unipolar
Technology: OptiMOS® -T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
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IPD50N04S4L08ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4L_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c87fdc25e50&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO252-3-313
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 7.3mΩ
Power dissipation: 46W
Technology: OptiMOS® -T2
Gate-source voltage: -16...20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 49A
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BSC050N04LSGATMA1 BSC050N04LSGATMA1 INFINEON TECHNOLOGIES BSC050N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5mΩ
Power dissipation: 57W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 71A
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IAUA250N04S6N005AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA250N04S6N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a170d3f38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.7mΩ
Power dissipation: 250W
Gate charge: 170nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.5kA
Drain-source voltage: 40V
Drain current: 62A
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IAUA250N04S6N006AUMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.7mΩ
Power dissipation: 250W
Gate charge: 169nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.5kA
Drain-source voltage: 40V
Drain current: 57A
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IAUA250N04S6N007AUMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.8Ω
Power dissipation: 250W
Gate charge: 151nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1350A
Drain-source voltage: 40V
Drain current: 55A
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IAUA250N04S6N007EAUMA1 INFINEON TECHNOLOGIES Infineon-IAUA250N04S6N007E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac29beb03f29 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.83Ω
Power dissipation: 192W
Gate charge: 128nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.3kA
Drain-source voltage: 40V
Drain current: 55A
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IAUA250N04S6N008AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA250N04S6N008-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a23773f3b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 960µΩ
Power dissipation: 172W
Gate charge: 109nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1100A
Drain-source voltage: 40V
Drain current: 51A
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ISP452 ISP452 INFINEON TECHNOLOGIES ISP452.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Kind of output: N-Channel
Technology: Industrial PROFET
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.75 EUR
30+2.46 EUR
31+2.36 EUR
33+2.23 EUR
100+2.20 EUR
500+2.14 EUR
Mindestbestellmenge: 27
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IRFS4310ZTRLPBF IRFS4310ZTRLPBF INFINEON TECHNOLOGIES irfb4310zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IR2128SPBF IR2128SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 33 Stücke:
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22+3.27 EUR
32+2.27 EUR
33+2.17 EUR
Mindestbestellmenge: 22
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IRFR3607TRPBF IRFR3607TRPBF INFINEON TECHNOLOGIES irfr3607pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TT320N18SOF TT320N18SOF INFINEON TECHNOLOGIES TT320N18SOF_TD320N18SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
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IDW40G65C5XKSA1 IDW40G65C5XKSA1 INFINEON TECHNOLOGIES IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
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CY7C2245KV18-450BZXI INFINEON TECHNOLOGIES Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
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BCR320UE6327HTSA1 BCR320UE6327HTSA1 INFINEON TECHNOLOGIES BCR320UE6327.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Case: SC74
Operating voltage: 0...25V DC
Output current: 0.25A
Type of integrated circuit: driver
Number of channels: 1
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BCR321UE6327HTSA1 INFINEON TECHNOLOGIES dgdl?fileId=5546d4624b0b249c014b7d69949b463b Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Case: SC74
Operating voltage: 0...4.5V DC
Output current: 0.25A
Type of integrated circuit: driver
Number of channels: 1
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PVI1050NSPBF PVI1050NSPBF INFINEON TECHNOLOGIES pvin.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Produkt ist nicht verfügbar
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IPA65R280E6XKSA1 IPA65R280E6XKSA1 INFINEON TECHNOLOGIES IPA65R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R280C6FKSA1 IPW65R280C6FKSA1 INFINEON TECHNOLOGIES IPW65R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI65R280E6XKSA1 IPI65R280E6XKSA1 INFINEON TECHNOLOGIES IPI65R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R280E6XKSA1 IPP65R280E6XKSA1 INFINEON TECHNOLOGIES IPP65R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R280E6ATMA1 IPB65R280E6ATMA1 INFINEON TECHNOLOGIES IPB65R280E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI65R280C6XKSA1 IPI65R280C6XKSA1 INFINEON TECHNOLOGIES IPI65R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R190E6XKSA1 IPA65R190E6XKSA1 INFINEON TECHNOLOGIES IPA65R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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26+2.83 EUR
27+2.67 EUR
100+2.57 EUR
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IPA65R190C7XKSA1 IPA65R190C7XKSA1 INFINEON TECHNOLOGIES IPA65R190C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA65R190CFDXKSA1 IPA65R190CFDXKSA1 INFINEON TECHNOLOGIES IPA65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA65R310CFDXKSA1 IPA65R310CFDXKSA1 INFINEON TECHNOLOGIES IPA65R310CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES BSZ100N06LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFS4610TRLPBF IRFS4610TRLPBF INFINEON TECHNOLOGIES irfs4410pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IDH16G65C6XKSA1 IDH16G65C6XKSA1 INFINEON TECHNOLOGIES IDH16G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; PG-TO220-2; 97W
Case: PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 65A
Leakage current: 123µA
Power dissipation: 97W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...1.37mm
Mounting: THT
Produkt ist nicht verfügbar
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IPL60R075CFD7 IPL60R075CFD7 INFINEON TECHNOLOGIES IPL60R075CFD7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Mounting: SMD
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™
Case: PG-VSON-4
Produkt ist nicht verfügbar
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IPW60R075CPFKSA1 IPW60R075CPFKSA1 INFINEON TECHNOLOGIES IPW60R075CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™ CP
Case: PG-TO247-3
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BCR602XTSA1 BCR602XTSA1 INFINEON TECHNOLOGIES Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...60V DC
Output current: 10mA
Number of channels: 1
Protection: overheating OTP
auf Bestellung 1586 Stücke:
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91+0.79 EUR
110+0.65 EUR
146+0.49 EUR
154+0.46 EUR
250+0.45 EUR
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BCR420U BCR420U INFINEON TECHNOLOGIES BCR420U.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Topology: single transistor
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265+0.27 EUR
305+0.24 EUR
320+0.22 EUR
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BCR402U BCR402U INFINEON TECHNOLOGIES bcr402u.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Topology: single transistor
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BCR402RE6327 BCR402RE6327 INFINEON TECHNOLOGIES BCR402R.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 20...60mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.2...18V DC
Topology: single transistor
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228+0.31 EUR
298+0.24 EUR
316+0.23 EUR
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BSO080P03SHXUMA1 BSO080P03SHXUMA1 INFINEON TECHNOLOGIES BSO080P03SHXUMA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±25V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
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BSP78 BSP78 INFINEON TECHNOLOGIES BSP78.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
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32+2.27 EUR
53+1.37 EUR
55+1.30 EUR
1000+1.27 EUR
2000+1.26 EUR
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IRFH4210DTRPBF irfh4210dpbf.pdf
IRFH4210DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Trade name: FastIRFET
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IRFH5210TRPBF irfh5210pbf.pdf
IRFH5210TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8311TRPBF IRFH8311TRPBF.pdf
IRFH8311TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH5020TRPBF irfh5020pbf.pdf
IRFH5020TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH5025TRPBF irfh5025pbf.pdf
IRFH5025TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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CY7C1399BN-12VXI Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
Part status: Not recommended for new designs
Produkt ist nicht verfügbar
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CY7C1399BN-12VXIT Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Part status: Not recommended for new designs
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CY7C199D-10VXIT Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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BAT5403WE6327HTSA1 BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf
BAT5403WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; 230mW
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
auf Bestellung 4473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
291+0.25 EUR
366+0.20 EUR
408+0.18 EUR
858+0.08 EUR
908+0.08 EUR
3000+0.08 EUR
Mindestbestellmenge: 209
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TZ400N26KOFHPSA1 TZ400N26KOF.pdf
TZ400N26KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.6kV; 400A; BG-PB501-1
Semiconductor structure: single thyristor
Gate current: 300mA
Max. forward impulse current: 13kA
Case: BG-PB501-1
Max. forward voltage: 1.88V
Max. off-state voltage: 2.6kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Load current: 400A
Type of module: thyristor
Produkt ist nicht verfügbar
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IHW30N135R3FKSA1 DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88
IHW30N135R3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IRF9362TRPBF irf9362pbf.pdf
IRF9362TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS3010A03WE6327HTSA1 BAS3010A03WE6327HT.pdf
BAS3010A03WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
auf Bestellung 1515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
230+0.31 EUR
309+0.23 EUR
353+0.20 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IPB026N06NATMA1 IPB026N06N-DTE.pdf
IPB026N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1804E6327HTSA1 BAT18.pdf
BAT1804E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSZ130N03MSGATMA1 BSZ130N03MSG-DTE.pdf
BSZ130N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD70N10S3L12ATMA1 Infineon-IPD70N10S3L-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043183a955501188996d3f9675c&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 280A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21091S06FXUMA1 Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff
2ED21091S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB029N06N3GATMA1 IPB029N06N3G-DTE.pdf
IPB029N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD95R750P7ATMA1 IPD95R750P7.pdf
IPD95R750P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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CY14E116L-ZS25XI ?docID=50503
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 25ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 2Mx8bit
Access time: 25ns
Kind of interface: parallel
Memory: 16Mb SRAM
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N04S408ATMA1 Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Drain current: 47A
On-state resistance: 7.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 46W
Polarisation: unipolar
Technology: OptiMOS® -T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N04S4L08ATMA1 Infineon-IPD50N04S4L_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c87fdc25e50&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO252-3-313
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 7.3mΩ
Power dissipation: 46W
Technology: OptiMOS® -T2
Gate-source voltage: -16...20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 49A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC050N04LSGATMA1 BSC050N04LSG-DTE.pdf
BSC050N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5mΩ
Power dissipation: 57W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 71A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUA250N04S6N005AUMA1 Infineon-IAUA250N04S6N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a170d3f38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 62A; Idm: 1500A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.7mΩ
Power dissipation: 250W
Gate charge: 170nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.5kA
Drain-source voltage: 40V
Drain current: 62A
Produkt ist nicht verfügbar
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IAUA250N04S6N006AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.7mΩ
Power dissipation: 250W
Gate charge: 169nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.5kA
Drain-source voltage: 40V
Drain current: 57A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUA250N04S6N007AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.8Ω
Power dissipation: 250W
Gate charge: 151nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1350A
Drain-source voltage: 40V
Drain current: 55A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUA250N04S6N007EAUMA1 Infineon-IAUA250N04S6N007E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac29beb03f29
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 55A; Idm: 1300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.83Ω
Power dissipation: 192W
Gate charge: 128nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1.3kA
Drain-source voltage: 40V
Drain current: 55A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUA250N04S6N008AUMA1 Infineon-IAUA250N04S6N008-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017fac2a23773f3b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 51A; Idm: 1100A
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 960µΩ
Power dissipation: 172W
Gate charge: 109nC
Technology: OptiMOS™ 6
Gate-source voltage: ±20V
Pulsed drain current: 1100A
Drain-source voltage: 40V
Drain current: 51A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISP452 ISP452.pdf
ISP452
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Kind of output: N-Channel
Technology: Industrial PROFET
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.75 EUR
30+2.46 EUR
31+2.36 EUR
33+2.23 EUR
100+2.20 EUR
500+2.14 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4310ZTRLPBF irfb4310zpbf.pdf
IRFS4310ZTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2128SPBF IR21271SPBF.pdf
IR2128SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
32+2.27 EUR
33+2.17 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3607TRPBF irfr3607pbf.pdf
IRFR3607TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT320N18SOF TT320N18SOF_TD320N18SOF.pdf
TT320N18SOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+126.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C2245KV18-450BZXI Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR320UE6327HTSA1 BCR320UE6327.pdf
BCR320UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Case: SC74
Operating voltage: 0...25V DC
Output current: 0.25A
Type of integrated circuit: driver
Number of channels: 1
auf Bestellung 1008 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.50 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BCR321UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b7d69949b463b
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Case: SC74
Operating voltage: 0...4.5V DC
Output current: 0.25A
Type of integrated circuit: driver
Number of channels: 1
Produkt ist nicht verfügbar
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PVI1050NSPBF pvin.pdf
PVI1050NSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Produkt ist nicht verfügbar
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IPA65R280E6XKSA1 IPA65R280E6-DTE.pdf
IPA65R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R280C6FKSA1 IPW65R280C6-DTE.pdf
IPW65R280C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R280E6XKSA1 IPI65R280E6-DTE.pdf
IPI65R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R280E6XKSA1 IPP65R280E6-DTE.pdf
IPP65R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R280E6ATMA1 IPB65R280E6-DTE.pdf
IPB65R280E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI65R280C6XKSA1 IPI65R280C6-DTE.pdf
IPI65R280C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R190E6XKSA1 IPA65R190E6-DTE.pdf
IPA65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.19 EUR
26+2.83 EUR
27+2.67 EUR
100+2.57 EUR
Mindestbestellmenge: 18
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IPA65R190C7XKSA1 IPA65R190C7-DTE.pdf
IPA65R190C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R190CFDXKSA1 IPA65R190CFD-DTE.pdf
IPA65R190CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R310CFDXKSA1 IPA65R310CFD-DTE.pdf
IPA65R310CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ100N06LS3GATMA1 BSZ100N06LS3G-DTE.pdf
BSZ100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4610TRLPBF irfs4410pbf.pdf
IRFS4610TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDH16G65C6XKSA1 IDH16G65C6.pdf
IDH16G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; PG-TO220-2; 97W
Case: PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Load current: 16A
Semiconductor structure: single diode
Max. forward impulse current: 65A
Leakage current: 123µA
Power dissipation: 97W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Heatsink thickness: 1.17...1.37mm
Mounting: THT
Produkt ist nicht verfügbar
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IPL60R075CFD7 IPL60R075CFD7.pdf
IPL60R075CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Mounting: SMD
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™
Case: PG-VSON-4
Produkt ist nicht verfügbar
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IPW60R075CPFKSA1 IPW60R075CP-DTE.pdf
IPW60R075CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™ CP
Case: PG-TO247-3
Produkt ist nicht verfügbar
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BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...60V DC
Output current: 10mA
Number of channels: 1
Protection: overheating OTP
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
110+0.65 EUR
146+0.49 EUR
154+0.46 EUR
250+0.45 EUR
Mindestbestellmenge: 91
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BCR420U BCR420U.pdf
BCR420U
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Topology: single transistor
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
230+0.31 EUR
265+0.27 EUR
305+0.24 EUR
320+0.22 EUR
Mindestbestellmenge: 230
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BCR402U bcr402u.pdf
BCR402U
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Topology: single transistor
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
140+0.51 EUR
Mindestbestellmenge: 140
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BCR402RE6327 BCR402R.pdf
BCR402RE6327
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 20...60mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.2...18V DC
Topology: single transistor
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
228+0.31 EUR
298+0.24 EUR
316+0.23 EUR
Mindestbestellmenge: 173
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BSO080P03SHXUMA1 BSO080P03SHXUMA1-DTE.PDF
BSO080P03SHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±25V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Produkt ist nicht verfügbar
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BSP78 BSP78.pdf
BSP78
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 2773 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
32+2.27 EUR
53+1.37 EUR
55+1.30 EUR
1000+1.27 EUR
2000+1.26 EUR
Mindestbestellmenge: 21
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