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BFR92PE6327 BFR92PE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B1C4B05EE2F92A15&compId=BFR92p.pdf?ci_sign=0796988a38b6bbbde893f563c65ac9fb4f19a8d9 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
472+0.15 EUR
544+0.13 EUR
638+0.11 EUR
711+0.1 EUR
789+0.091 EUR
875+0.082 EUR
885+0.08 EUR
Mindestbestellmenge: 417
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BSR302NL6327HTSA1 BSR302NL6327HTSA1 INFINEON TECHNOLOGIES BSR302NL6327HTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 0.5W
Drain current: 3.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: SC59
Produkt ist nicht verfügbar
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BFP193E6327 BFP193E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C8DDA3C7E11C&compId=BFP193E6327-dte.pdf?ci_sign=adbef814c2b08bb11ceda7a75b0baf42f93db9f7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 3752 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
298+0.24 EUR
391+0.18 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
3000+0.13 EUR
Mindestbestellmenge: 250
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BCR133E6327 BCR133E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A08E45B8E469&compId=BCR133.pdf?ci_sign=f326d205106dded54591a302ba389bcff56e3c4a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
770+0.093 EUR
857+0.084 EUR
930+0.077 EUR
1011+0.071 EUR
1127+0.063 EUR
1220+0.059 EUR
Mindestbestellmenge: 625
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BCR158E6327 BCR158E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C588C2D3EF2469&compId=BCR158.pdf?ci_sign=0e18e7a6b0bfae444245180d93ab4961cabe1251 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 6733 Stücke:
Lieferzeit 14-21 Tag (e)
1042+0.069 EUR
1200+0.06 EUR
1356+0.053 EUR
1563+0.046 EUR
3000+0.045 EUR
Mindestbestellmenge: 1042
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BAR6403WE6327HTSA1 BAR6403WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4 Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
auf Bestellung 525 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
525+0.14 EUR
Mindestbestellmenge: 334
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BAR6404E6327HTSA1 BAR6404E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A24E9F32E65820&compId=BAR64-04.pdf?ci_sign=f8b366674ccb5015c2234e8f26366cf079c3def1 Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 1473 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
313+0.23 EUR
405+0.18 EUR
604+0.12 EUR
897+0.08 EUR
1000+0.074 EUR
Mindestbestellmenge: 209
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BAR66E6327HTSA1 BAR66E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99E9452B4A9E4B820&compId=bar66series.pdf?ci_sign=0c78a33a6f68947f2201c382aa99c2ec4e873f38 Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 12A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: double series
Features of semiconductor devices: PIN
Mounting: SMD
Type of diode: switching
auf Bestellung 4485 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
391+0.18 EUR
443+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 313
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BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES BAx92-DTE.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
430+0.17 EUR
485+0.15 EUR
540+0.13 EUR
Mindestbestellmenge: 380
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BAR6303WE6327HTSA1 BAR6303WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE253C84036F3D7&compId=BAR63xx_ser.pdf?ci_sign=ce0958481adbf0cb48c9a0e6e33719e686dc0f89 Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 2144 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
511+0.14 EUR
575+0.12 EUR
667+0.11 EUR
820+0.087 EUR
834+0.086 EUR
Mindestbestellmenge: 385
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BC817UPNE6327HTSA1 BC817UPNE6327HTSA1 INFINEON TECHNOLOGIES BC817UPNE6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 7003 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
258+0.28 EUR
343+0.21 EUR
443+0.16 EUR
Mindestbestellmenge: 152
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB81B27E263A469&compId=BAS3007ARPPE6327.pdf?ci_sign=b5ed67fdce37abb4658c35aaf90648a7216714d2 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Load current: 0.9A
Max. forward impulse current: 5A
Max. off-state voltage: 30V
auf Bestellung 3185 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
193+0.37 EUR
205+0.35 EUR
256+0.28 EUR
283+0.25 EUR
500+0.24 EUR
Mindestbestellmenge: 167
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB820F651F00469&compId=BAS4002ARPPE6327.pdf?ci_sign=129a63ea239a763a7e4e19d6fcee10919cb6da76 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.2A
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
280+0.26 EUR
348+0.21 EUR
374+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 218
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BB640E6327HTSA1 BB640E6327HTSA1 INFINEON TECHNOLOGIES BB640E-DTE.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 2.8...76pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
auf Bestellung 1821 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
302+0.24 EUR
439+0.16 EUR
596+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 200
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IRLML9303TRPBF IRLML9303TRPBF INFINEON TECHNOLOGIES irlml9303pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 9896 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
296+0.24 EUR
443+0.16 EUR
527+0.14 EUR
618+0.12 EUR
736+0.097 EUR
1000+0.087 EUR
3000+0.086 EUR
Mindestbestellmenge: 200
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IPD70R360P7SAUMA1 IPD70R360P7SAUMA1 INFINEON TECHNOLOGIES IPD70R360P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1510 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
88+0.82 EUR
100+0.72 EUR
112+0.64 EUR
500+0.61 EUR
Mindestbestellmenge: 73
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IR1161LTRPBF IR1161LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FAF5A857158259&compId=IR1161LTRPBF.pdf?ci_sign=9552f004c7f1bcc1886ae1975d8eecd6d4d90f75 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -2.5...1A
Power: 590mW
Supply voltage: 4.75...18V DC
Voltage class: 200V
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IR11688STRPBF IR11688STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FAF7AC44F86259&compId=IR11688STRPBF.pdf?ci_sign=ee780d8bdb01f8fa87dd259f66e77f18d4356584 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...1A
Power: 625mW
Supply voltage: 4.75...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Produkt ist nicht verfügbar
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IR1169STRPBF IR1169STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBF87D0F3BF5EA&compId=IR1169STRPBF.pdf?ci_sign=f2290a7105ab761b1e20b2c47711f7541b33ac9d Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -4...1A
Power: 625mW
Supply voltage: 11...19V DC
Voltage class: 200V
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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ICE5QR1070AZXKLA1
+2
 		ICE5QR1070AZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Operating voltage: 10...25.5V DC
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Output current: 0.4A
Power: 58/32W
Number of channels: 1
Input voltage: 80...265V
Breakdown voltage: 700V
Frequency: 20kHz
Case: DIP7
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.02 EUR
Mindestbestellmenge: 70
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BTS50055-1TMB BTS50055-1TMB INFINEON TECHNOLOGIES BTS50055-1TMB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 55A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 4.4mΩ
Supply voltage: 5...34V DC
Technology: High Current PROFET
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.38 EUR
11+6.78 EUR
50+5.93 EUR
Mindestbestellmenge: 8
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BTS50080-1TMB BTS50080-1TMB INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869888DFBE586469&compId=BTS50080-1TMB.pdf?ci_sign=dd4acc5f8af1b9f7b8a62d693a1b9e6c2f5af730 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Technology: High Current PROFET
Kind of integrated circuit: high-side
Case: PG-TO220-7-12
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: THT
On-state resistance: 7mΩ
Output current: 9.5A
Number of channels: 1
Supply voltage: 5.5...38V DC
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.31 EUR
14+5.46 EUR
Mindestbestellmenge: 10
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BFR182WH6327XTSA1 BFR182WH6327XTSA1 INFINEON TECHNOLOGIES BFR182WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 35mA
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
308+0.23 EUR
Mindestbestellmenge: 308
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BCP5616H6327XTSA1 BCP5616H6327XTSA1 INFINEON TECHNOLOGIES BCP5616H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
auf Bestellung 525 Stücke:
Lieferzeit 14-21 Tag (e)
240+0.3 EUR
265+0.27 EUR
295+0.24 EUR
345+0.21 EUR
Mindestbestellmenge: 240
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BCX53H6327XTSA1 BCX53H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C52B239147E469&compId=BCX53.pdf?ci_sign=06038f92536883fb5f048a4ed3d4e9113ac14b8b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)
269+0.27 EUR
307+0.23 EUR
350+0.2 EUR
374+0.19 EUR
Mindestbestellmenge: 269
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BCX5610H6327XTSA1 BCX5610H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587FE96FEC45A6469&compId=BCX56H6327XTSA1.pdf?ci_sign=52af526ba3cf213dc7c315370759944bc823dfb4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 1485 Stücke:
Lieferzeit 14-21 Tag (e)
240+0.3 EUR
270+0.27 EUR
305+0.24 EUR
335+0.21 EUR
1000+0.2 EUR
Mindestbestellmenge: 240
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BCX56H6327XTSA1 BCX56H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587FE96FEC45A6469&compId=BCX56H6327XTSA1.pdf?ci_sign=52af526ba3cf213dc7c315370759944bc823dfb4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IRF5802TRPBF IRF5802TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F65CA91D160F1A303005056AB0C4F&compId=irf5802pbf.pdf?ci_sign=fc0c972f70c588d11a57b7d4ca5bf38e2b7f9fb6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
211+0.34 EUR
249+0.29 EUR
348+0.21 EUR
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IRLMS2002TRPBF IRLMS2002TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227CF15C848FF1A303005056AB0C4F&compId=irlms2002pbf.pdf?ci_sign=582d4397a97dbf01cfb70f72bdc441e378316d1a description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 INFINEON TECHNOLOGIES BSL207SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6A
Drain-source voltage: -20V
On-state resistance: 41mΩ
Power dissipation: 2W
auf Bestellung 2835 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
140+0.51 EUR
194+0.37 EUR
250+0.32 EUR
500+0.3 EUR
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IR2132JPBF IR2132JPBF INFINEON TECHNOLOGIES IR2132JPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 2W
auf Bestellung 15 Stücke:
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IR2135JPBF IR2135JPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
auf Bestellung 20 Stücke:
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5+14.41 EUR
6+13 EUR
10+11.43 EUR
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IR2233JPBF IR2233JPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.3 EUR
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IRFB7434PBF IRFB7434PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA7DC604355EA&compId=IRFB7434PBF.pdf?ci_sign=de22a06d3fea89ee22bebabfc0e049a455f48e14 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 29 Stücke:
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23+3.16 EUR
26+2.76 EUR
29+2.46 EUR
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IR2181SPBF IR2181SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD34A5F1A6F5005056AB5A8F&compId=ir2181.pdf?ci_sign=c5a6339eac545a9ba06e6dda4e6c0792928b2542 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
auf Bestellung 75 Stücke:
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SPW20N60S5 SPW20N60S5 INFINEON TECHNOLOGIES SPW20N60S5.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.42 EUR
15+4.88 EUR
30+4.3 EUR
120+3.88 EUR
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IRLZ34NPBF IRLZ34NPBF INFINEON TECHNOLOGIES irlz34n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 16.7nC
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IRLZ34NSTRLPBF INFINEON TECHNOLOGIES irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFP3006PBF IRFP3006PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE5E61C9395EA&compId=IRFP3006PBF.pdf?ci_sign=3f9de887d18eac973e5482dc6f05ce8c2ff62630 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 112 Stücke:
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22+3.3 EUR
25+2.92 EUR
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IRFP3415PBF IRFP3415PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAF0F1A6F5005056AB5A8F&compId=irfp3415.pdf?ci_sign=7dce4703a8017664ea463bf6fafd149e008ced7d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO247AC
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Gate charge: 133.3nC
On-state resistance: 42mΩ
Power dissipation: 200W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 11 Stücke:
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11+6.51 EUR
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IRFP3703PBF IRFP3703PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAFEF1A6F5005056AB5A8F&compId=irfp3703.pdf?ci_sign=bc68c2fbece183b5370d800cc11ba437ce67f660 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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1+71.5 EUR
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BSP129H6327XTSA1 BSP129H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A78558D0C55E5E27&compId=BSP129H6327-DTE.pdf?ci_sign=fdfeb4a848e9de3029b705fc4ac90ccf3288a56b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 1322 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
120+0.6 EUR
151+0.47 EUR
160+0.45 EUR
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IRS2304SPBF IRS2304SPBF INFINEON TECHNOLOGIES irs2304spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 220ns
Power: 625mW
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.72 EUR
36+1.99 EUR
47+1.53 EUR
Mindestbestellmenge: 27
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BB85702VH7902XTSA1 BB85702VH7902XTSA1 INFINEON TECHNOLOGIES BB837_BB857.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Mounting: SMD
Kind of package: reel; tape
Case: SC79
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 0.45...7.2pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
auf Bestellung 3007 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
272+0.26 EUR
296+0.24 EUR
410+0.17 EUR
527+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 228
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BAR6302VH6327XTSA1 BAR6302VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE253C84036F3D7&compId=BAR63xx_ser.pdf?ci_sign=ce0958481adbf0cb48c9a0e6e33719e686dc0f89 Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Max. off-state voltage: 50V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 5985 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
307+0.23 EUR
386+0.19 EUR
621+0.12 EUR
823+0.087 EUR
987+0.073 EUR
1112+0.064 EUR
3000+0.059 EUR
Mindestbestellmenge: 250
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BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA543505C011C&compId=BSC123N08NS3G-DTE.pdf?ci_sign=1d5e204586f07d92fb2c8f8a1f997c1b7905496e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12.3mΩ
Drain current: 55A
Gate-source voltage: ±20V
Power dissipation: 66W
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
auf Bestellung 3339 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
112+0.64 EUR
122+0.59 EUR
131+0.55 EUR
139+0.51 EUR
250+0.48 EUR
500+0.46 EUR
1000+0.44 EUR
2500+0.42 EUR
Mindestbestellmenge: 91
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BSC160N10NS3GATMA1 BSC160N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DAF9708D3411C&compId=BSC160N10NS3G-DTE.pdf?ci_sign=40b99f03d0385a774315a98299c6b275c55d6333 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
On-state resistance: 16mΩ
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC190N15NS3GATMA1 BSC190N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC604BDBE8C11C&compId=BSC190N15NS3G-DTE.pdf?ci_sign=198571536f486da766f745ce415f44d0d9f21d86 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TSDSON-8
Polarisation: unipolar
auf Bestellung 1688 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
Mindestbestellmenge: 36
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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
290+0.25 EUR
485+0.15 EUR
530+0.14 EUR
605+0.12 EUR
Mindestbestellmenge: 290
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BAR6405WH6327XTSA1 BAR6405WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4 Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT323
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
391+0.18 EUR
447+0.16 EUR
468+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 334
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IRFZ46NLPBF IRFZ46NLPBF INFINEON TECHNOLOGIES irfz46ns.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 48nC
auf Bestellung 103 Stücke:
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50+1.46 EUR
54+1.33 EUR
65+1.1 EUR
72+1 EUR
Mindestbestellmenge: 50
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IRFZ46NPBF IRFZ46NPBF INFINEON TECHNOLOGIES irfz46n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 48nC
Kind of package: tube
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
89+0.8 EUR
102+0.7 EUR
113+0.63 EUR
126+0.57 EUR
Mindestbestellmenge: 71
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IRFI1310NPBF IRFI1310NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284B41F1A6F5005056AB5A8F&compId=irfi1310n.pdf?ci_sign=01e2e2c9f0e71c2ff0c5bc018c7724f0acccbe52 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.2 EUR
35+2.09 EUR
36+1.99 EUR
Mindestbestellmenge: 33
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IRFI4229PBF IRFI4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BCFC8A0360F1A303005056AB0C4F&compId=irfi4229pbf.pdf?ci_sign=699c0e908f3c6258718e35df6f7280386d6cc0c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4321PBF IRFI4321PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BD193BBC93F1A303005056AB0C4F&compId=irfi4321pbf.pdf?ci_sign=2ea90ea7929f7e7a1e92a7b4d5c46e524d83b7f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 46W
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.22 EUR
Mindestbestellmenge: 33
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IRFI4410ZPBF IRFI4410ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBE67CFBAE00143&compId=IRFI4410ZPBF.pdf?ci_sign=2106fa9c0773cda6f12da043fee65f032dcce0d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Kind of package: tube
On-state resistance: 9.3mΩ
Gate-source voltage: ±30V
Drain current: 30A
Power dissipation: 47W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 81nC
Case: TO220FP
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.59 EUR
33+2.2 EUR
50+2.09 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRFI530NPBF IRFI530NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA25F1A6F5005056AB5A8F&compId=irfi530n.pdf?ci_sign=f4dea01463a1c9e7fa5fd95d1b7accd595ebd817 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
70+1.03 EUR
78+0.92 EUR
100+0.87 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFI540NPBF IRFI540NPBF INFINEON TECHNOLOGIES irfi540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Gate charge: 62.7nC
On-state resistance: 52mΩ
Power dissipation: 42W
Gate-source voltage: ±20V
Kind of package: tube
Technology: HEXFET®
Kind of channel: enhancement
Case: TO220FP
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
52+1.4 EUR
60+1.2 EUR
Mindestbestellmenge: 41
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IPB033N10N5LF IPB033N10N5LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CE0FB9307C8749&compId=IPB033N10N5LF.pdf?ci_sign=8b84caa81adb999660a947a742bfb25f2bb555c1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD031N03LGATMA1 IPD031N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F316ADF575611C&compId=IPD031N03LG-DTE.pdf?ci_sign=44aace7bc3066b2eb9d2220bfd76a10eefb1118b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2886 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
81+0.89 EUR
91+0.79 EUR
102+0.7 EUR
500+0.66 EUR
Mindestbestellmenge: 73
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BFR92PE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B1C4B05EE2F92A15&compId=BFR92p.pdf?ci_sign=0796988a38b6bbbde893f563c65ac9fb4f19a8d9
BFR92PE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
472+0.15 EUR
544+0.13 EUR
638+0.11 EUR
711+0.1 EUR
789+0.091 EUR
875+0.082 EUR
885+0.08 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BSR302NL6327HTSA1 BSR302NL6327HTSA1.pdf
BSR302NL6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 0.5W
Drain current: 3.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: SC59
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP193E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C8DDA3C7E11C&compId=BFP193E6327-dte.pdf?ci_sign=adbef814c2b08bb11ceda7a75b0baf42f93db9f7
BFP193E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 3752 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
298+0.24 EUR
391+0.18 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
3000+0.13 EUR
Mindestbestellmenge: 250
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BCR133E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A08E45B8E469&compId=BCR133.pdf?ci_sign=f326d205106dded54591a302ba389bcff56e3c4a
BCR133E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
770+0.093 EUR
857+0.084 EUR
930+0.077 EUR
1011+0.071 EUR
1127+0.063 EUR
1220+0.059 EUR
Mindestbestellmenge: 625
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BCR158E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C588C2D3EF2469&compId=BCR158.pdf?ci_sign=0e18e7a6b0bfae444245180d93ab4961cabe1251
BCR158E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 6733 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1042+0.069 EUR
1200+0.06 EUR
1356+0.053 EUR
1563+0.046 EUR
3000+0.045 EUR
Mindestbestellmenge: 1042
Im Einkaufswagen  Stück im Wert von  UAH
BAR6403WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4
BAR6403WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
auf Bestellung 525 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
525+0.14 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BAR6404E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A24E9F32E65820&compId=BAR64-04.pdf?ci_sign=f8b366674ccb5015c2234e8f26366cf079c3def1
BAR6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 1473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
313+0.23 EUR
405+0.18 EUR
604+0.12 EUR
897+0.08 EUR
1000+0.074 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
BAR66E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99E9452B4A9E4B820&compId=bar66series.pdf?ci_sign=0c78a33a6f68947f2201c382aa99c2ec4e873f38
BAR66E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 12A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: double series
Features of semiconductor devices: PIN
Mounting: SMD
Type of diode: switching
auf Bestellung 4485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
391+0.18 EUR
443+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
BA592E6327HTSA1 BAx92-DTE.pdf
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
380+0.19 EUR
430+0.17 EUR
485+0.15 EUR
540+0.13 EUR
Mindestbestellmenge: 380
Im Einkaufswagen  Stück im Wert von  UAH
BAR6303WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE253C84036F3D7&compId=BAR63xx_ser.pdf?ci_sign=ce0958481adbf0cb48c9a0e6e33719e686dc0f89
BAR6303WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 2144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
511+0.14 EUR
575+0.12 EUR
667+0.11 EUR
820+0.087 EUR
834+0.086 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BC817UPNE6327HTSA1 BC817UPNE6327.pdf
BC817UPNE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 7003 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
258+0.28 EUR
343+0.21 EUR
443+0.16 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
BAS3007ARPPE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB81B27E263A469&compId=BAS3007ARPPE6327.pdf?ci_sign=b5ed67fdce37abb4658c35aaf90648a7216714d2
BAS3007ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Load current: 0.9A
Max. forward impulse current: 5A
Max. off-state voltage: 30V
auf Bestellung 3185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
193+0.37 EUR
205+0.35 EUR
256+0.28 EUR
283+0.25 EUR
500+0.24 EUR
Mindestbestellmenge: 167
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BAS4002ARPPE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB820F651F00469&compId=BAS4002ARPPE6327.pdf?ci_sign=129a63ea239a763a7e4e19d6fcee10919cb6da76
BAS4002ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.2A
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
280+0.26 EUR
348+0.21 EUR
374+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
BB640E6327HTSA1 BB640E-DTE.pdf
BB640E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 2.8...76pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
auf Bestellung 1821 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
302+0.24 EUR
439+0.16 EUR
596+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IRLML9303TRPBF irlml9303pbf.pdf
IRLML9303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 9896 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
296+0.24 EUR
443+0.16 EUR
527+0.14 EUR
618+0.12 EUR
736+0.097 EUR
1000+0.087 EUR
3000+0.086 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IPD70R360P7SAUMA1 IPD70R360P7S.pdf
IPD70R360P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1510 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
88+0.82 EUR
100+0.72 EUR
112+0.64 EUR
500+0.61 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
IR1161LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FAF5A857158259&compId=IR1161LTRPBF.pdf?ci_sign=9552f004c7f1bcc1886ae1975d8eecd6d4d90f75
IR1161LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -2.5...1A
Power: 590mW
Supply voltage: 4.75...18V DC
Voltage class: 200V
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR11688STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FAF7AC44F86259&compId=IR11688STRPBF.pdf?ci_sign=ee780d8bdb01f8fa87dd259f66e77f18d4356584
IR11688STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...1A
Power: 625mW
Supply voltage: 4.75...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR1169STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBF87D0F3BF5EA&compId=IR1169STRPBF.pdf?ci_sign=f2290a7105ab761b1e20b2c47711f7541b33ac9d
IR1169STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -4...1A
Power: 625mW
Supply voltage: 11...19V DC
Voltage class: 200V
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE5QR1070AZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124
ICE5QR1070AZXKLA1
+2
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Operating voltage: 10...25.5V DC
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Output current: 0.4A
Power: 58/32W
Number of channels: 1
Input voltage: 80...265V
Breakdown voltage: 700V
Frequency: 20kHz
Case: DIP7
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.02 EUR
Mindestbestellmenge: 70
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BTS50055-1TMB BTS50055-1TMB.pdf
BTS50055-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 55A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 4.4mΩ
Supply voltage: 5...34V DC
Technology: High Current PROFET
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.38 EUR
11+6.78 EUR
50+5.93 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BTS50080-1TMB pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869888DFBE586469&compId=BTS50080-1TMB.pdf?ci_sign=dd4acc5f8af1b9f7b8a62d693a1b9e6c2f5af730
BTS50080-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Technology: High Current PROFET
Kind of integrated circuit: high-side
Case: PG-TO220-7-12
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: THT
On-state resistance: 7mΩ
Output current: 9.5A
Number of channels: 1
Supply voltage: 5.5...38V DC
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.31 EUR
14+5.46 EUR
Mindestbestellmenge: 10
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BFR182WH6327XTSA1 BFR182WH6327.pdf
BFR182WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 35mA
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
308+0.23 EUR
Mindestbestellmenge: 308
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BCP5616H6327XTSA1 BCP5616H6327XTSA1.pdf
BCP5616H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
auf Bestellung 525 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+0.3 EUR
265+0.27 EUR
295+0.24 EUR
345+0.21 EUR
Mindestbestellmenge: 240
Im Einkaufswagen  Stück im Wert von  UAH
BCX53H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C52B239147E469&compId=BCX53.pdf?ci_sign=06038f92536883fb5f048a4ed3d4e9113ac14b8b
BCX53H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
269+0.27 EUR
307+0.23 EUR
350+0.2 EUR
374+0.19 EUR
Mindestbestellmenge: 269
Im Einkaufswagen  Stück im Wert von  UAH
BCX5610H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587FE96FEC45A6469&compId=BCX56H6327XTSA1.pdf?ci_sign=52af526ba3cf213dc7c315370759944bc823dfb4
BCX5610H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 1485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+0.3 EUR
270+0.27 EUR
305+0.24 EUR
335+0.21 EUR
1000+0.2 EUR
Mindestbestellmenge: 240
Im Einkaufswagen  Stück im Wert von  UAH
BCX56H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587FE96FEC45A6469&compId=BCX56H6327XTSA1.pdf?ci_sign=52af526ba3cf213dc7c315370759944bc823dfb4
BCX56H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5802TRPBF pVersion=0046&contRep=ZT&docId=E21F65CA91D160F1A303005056AB0C4F&compId=irf5802pbf.pdf?ci_sign=fc0c972f70c588d11a57b7d4ca5bf38e2b7f9fb6
IRF5802TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
211+0.34 EUR
249+0.29 EUR
348+0.21 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS2002TRPBF description pVersion=0046&contRep=ZT&docId=E2227CF15C848FF1A303005056AB0C4F&compId=irlms2002pbf.pdf?ci_sign=582d4397a97dbf01cfb70f72bdc441e378316d1a
IRLMS2002TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BSL207SPH6327XTSA1 BSL207SPH6327XTSA1-DTE.pdf
BSL207SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6A
Drain-source voltage: -20V
On-state resistance: 41mΩ
Power dissipation: 2W
auf Bestellung 2835 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
140+0.51 EUR
194+0.37 EUR
250+0.32 EUR
500+0.3 EUR
Mindestbestellmenge: 95
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IR2132JPBF description IR2132JPBF.pdf
IR2132JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 2W
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.38 EUR
Mindestbestellmenge: 12
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IR2135JPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2135JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.41 EUR
6+13 EUR
10+11.43 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IR2233JPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.3 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7434PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA7DC604355EA&compId=IRFB7434PBF.pdf?ci_sign=de22a06d3fea89ee22bebabfc0e049a455f48e14
IRFB7434PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
26+2.76 EUR
29+2.46 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR2181SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD34A5F1A6F5005056AB5A8F&compId=ir2181.pdf?ci_sign=c5a6339eac545a9ba06e6dda4e6c0792928b2542
IR2181SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
Mindestbestellmenge: 24
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SPW20N60S5 description SPW20N60S5.pdf
SPW20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.42 EUR
15+4.88 EUR
30+4.3 EUR
120+3.88 EUR
Mindestbestellmenge: 14
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IRLZ34NPBF description irlz34n.pdf
IRLZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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IRLZ34NSTRLPBF irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3006PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE5E61C9395EA&compId=IRFP3006PBF.pdf?ci_sign=3f9de887d18eac973e5482dc6f05ce8c2ff62630
IRFP3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
25+2.92 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3415PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACAF0F1A6F5005056AB5A8F&compId=irfp3415.pdf?ci_sign=7dce4703a8017664ea463bf6fafd149e008ced7d
IRFP3415PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO247AC
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Gate charge: 133.3nC
On-state resistance: 42mΩ
Power dissipation: 200W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3703PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACAFEF1A6F5005056AB5A8F&compId=irfp3703.pdf?ci_sign=bc68c2fbece183b5370d800cc11ba437ce67f660
IRFP3703PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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BSP129H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A78558D0C55E5E27&compId=BSP129H6327-DTE.pdf?ci_sign=fdfeb4a848e9de3029b705fc4ac90ccf3288a56b
BSP129H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
auf Bestellung 1322 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
120+0.6 EUR
151+0.47 EUR
160+0.45 EUR
Mindestbestellmenge: 105
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IRS2304SPBF irs2304spbf.pdf
IRS2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 220ns
Power: 625mW
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
36+1.99 EUR
47+1.53 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BB85702VH7902XTSA1 BB837_BB857.pdf
BB85702VH7902XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Mounting: SMD
Kind of package: reel; tape
Case: SC79
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 0.45...7.2pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
auf Bestellung 3007 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
272+0.26 EUR
296+0.24 EUR
410+0.17 EUR
527+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 228
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BAR6302VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE253C84036F3D7&compId=BAR63xx_ser.pdf?ci_sign=ce0958481adbf0cb48c9a0e6e33719e686dc0f89
BAR6302VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Max. off-state voltage: 50V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 5985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
307+0.23 EUR
386+0.19 EUR
621+0.12 EUR
823+0.087 EUR
987+0.073 EUR
1112+0.064 EUR
3000+0.059 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BSC123N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA543505C011C&compId=BSC123N08NS3G-DTE.pdf?ci_sign=1d5e204586f07d92fb2c8f8a1f997c1b7905496e
BSC123N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12.3mΩ
Drain current: 55A
Gate-source voltage: ±20V
Power dissipation: 66W
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
auf Bestellung 3339 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
112+0.64 EUR
122+0.59 EUR
131+0.55 EUR
139+0.51 EUR
250+0.48 EUR
500+0.46 EUR
1000+0.44 EUR
2500+0.42 EUR
Mindestbestellmenge: 91
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BSC160N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DAF9708D3411C&compId=BSC160N10NS3G-DTE.pdf?ci_sign=40b99f03d0385a774315a98299c6b275c55d6333
BSC160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
On-state resistance: 16mΩ
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC190N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC604BDBE8C11C&compId=BSC190N15NS3G-DTE.pdf?ci_sign=198571536f486da766f745ce415f44d0d9f21d86
BSC190N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TSDSON-8
Polarisation: unipolar
auf Bestellung 1688 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
Mindestbestellmenge: 36
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BAR6402VH6327XTSA1 BAR64xx_Ser.pdf
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
290+0.25 EUR
485+0.15 EUR
530+0.14 EUR
605+0.12 EUR
Mindestbestellmenge: 290
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BAR6405WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4
BAR6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT323
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
391+0.18 EUR
447+0.16 EUR
468+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ46NLPBF description irfz46ns.pdf
IRFZ46NLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 48nC
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
54+1.33 EUR
65+1.1 EUR
72+1 EUR
Mindestbestellmenge: 50
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IRFZ46NPBF description irfz46n.pdf
IRFZ46NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 48nC
Kind of package: tube
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
89+0.8 EUR
102+0.7 EUR
113+0.63 EUR
126+0.57 EUR
Mindestbestellmenge: 71
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IRFI1310NPBF pVersion=0046&contRep=ZT&docId=E1C04E5F284B41F1A6F5005056AB5A8F&compId=irfi1310n.pdf?ci_sign=01e2e2c9f0e71c2ff0c5bc018c7724f0acccbe52
IRFI1310NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
35+2.09 EUR
36+1.99 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4229PBF pVersion=0046&contRep=ZT&docId=E221BCFC8A0360F1A303005056AB0C4F&compId=irfi4229pbf.pdf?ci_sign=699c0e908f3c6258718e35df6f7280386d6cc0c8
IRFI4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4321PBF pVersion=0046&contRep=ZT&docId=E221BD193BBC93F1A303005056AB0C4F&compId=irfi4321pbf.pdf?ci_sign=2ea90ea7929f7e7a1e92a7b4d5c46e524d83b7f1
IRFI4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 46W
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.22 EUR
Mindestbestellmenge: 33
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IRFI4410ZPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBE67CFBAE00143&compId=IRFI4410ZPBF.pdf?ci_sign=2106fa9c0773cda6f12da043fee65f032dcce0d2
IRFI4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Kind of package: tube
On-state resistance: 9.3mΩ
Gate-source voltage: ±30V
Drain current: 30A
Power dissipation: 47W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 81nC
Case: TO220FP
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.59 EUR
33+2.2 EUR
50+2.09 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRFI530NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA25F1A6F5005056AB5A8F&compId=irfi530n.pdf?ci_sign=f4dea01463a1c9e7fa5fd95d1b7accd595ebd817
IRFI530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
70+1.03 EUR
78+0.92 EUR
100+0.87 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFI540NPBF irfi540n.pdf
IRFI540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Gate charge: 62.7nC
On-state resistance: 52mΩ
Power dissipation: 42W
Gate-source voltage: ±20V
Kind of package: tube
Technology: HEXFET®
Kind of channel: enhancement
Case: TO220FP
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
52+1.4 EUR
60+1.2 EUR
Mindestbestellmenge: 41
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IPB033N10N5LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CE0FB9307C8749&compId=IPB033N10N5LF.pdf?ci_sign=8b84caa81adb999660a947a742bfb25f2bb555c1
IPB033N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD031N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F316ADF575611C&compId=IPD031N03LG-DTE.pdf?ci_sign=44aace7bc3066b2eb9d2220bfd76a10eefb1118b
IPD031N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2886 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
81+0.89 EUR
91+0.79 EUR
102+0.7 EUR
500+0.66 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
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