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IMW65R107M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IMZA65R107M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247-4
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP020N06NAKSA1 IPP020N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9965511A9A11C&compId=IPP020N06NAKSA1-DTE.pdf?ci_sign=83fbe3c4ddd538ca4cd145e6a0d205e58922a5e7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB014N06NATMA1 IPB014N06NATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C7CC0918A11C&compId=IPB014N06N-DTE.pdf?ci_sign=f6b6dd04892827bdcb42159d802d491c958ff46c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.35 EUR
18+3.99 EUR
23+3.2 EUR
26+2.83 EUR
Mindestbestellmenge: 17
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IPB034N06L3GATMA1 IPB034N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E22AC82A411C&compId=IPB034N06L3G-DTE.pdf?ci_sign=e2d349a57cd9a28e9c7dbde0c8d7a4b00ed0cf76 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BTS452T BTS452T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C802CDDF0469&compId=BTS452T.pdf?ci_sign=5923cb0a238c32d8e287782b944aa70f07c70e0a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IRLR8256TRPBF IRLR8256TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2228106FCAB3DF1A303005056AB0C4F&compId=irlr8256pbf.pdf?ci_sign=4c2cc703f2abc3f8398209309a4ead7e3bfd184a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AIGW40N65F5XKSA1 AIGW40N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA17D8D761D820&compId=AIGW40N65F5.pdf?ci_sign=9f18b81e1388b36fe28a61d1a64aea2a56a17800 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 177 Stücke:
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10+7.26 EUR
Mindestbestellmenge: 10
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AIGW40N65H5XKSA1 AIGW40N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA1E5F77139820&compId=AIGW40N65H5.pdf?ci_sign=2a5ebfdaf36f3a1c5d8093fdcc4ae6cc86adb1bc Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 160ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 161 Stücke:
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9+8.82 EUR
11+6.94 EUR
30+6.38 EUR
60+6.05 EUR
90+5.86 EUR
Mindestbestellmenge: 9
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AIKW40N65DF5XKSA1 AIKW40N65DF5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA8ECB779AF820&compId=AIKW40N65DF5.pdf?ci_sign=30e5760d338ea5f7c09287ec1f507604de3d7c43 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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AIKW40N65DH5XKSA1 AIKW40N65DH5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDAA097324C1820&compId=AIKW40N65DH5.pdf?ci_sign=eb08576828ba5aea9692fc921bdf5039bc724b57 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IRFH5010TRPBF IRFH5010TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B4FD5221A9F1A303005056AB0C4F&compId=irfh5010pbf.pdf?ci_sign=dc0d60716a5924fc56a535cd67f663c50e1ec509 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5015TRPBF IRFH5015TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B51A9A0F40F1A303005056AB0C4F&compId=irfh5015pbf.pdf?ci_sign=eb6ae4a5494ec8a6c1560e3bc7b19829447ecba1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AIKW50N65DH5XKSA1 AIKW50N65DH5XKSA1 INFINEON TECHNOLOGIES AIKW50N65DH5XKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 256ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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AIKW50N65DF5XKSA1 AIKW50N65DF5XKSA1 INFINEON TECHNOLOGIES AIKW50N65DF5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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BTS4141N BTS4141N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E631CB72C469&compId=BTS4141N.pdf?ci_sign=64b0e0c8fb54d7ae515db22073e7a17b310fd5c8 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output voltage: 12...45V
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 3130 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
28+2.62 EUR
100+2.06 EUR
250+1.84 EUR
500+1.69 EUR
1000+1.63 EUR
Mindestbestellmenge: 19
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IRG4BC40W-STRRP IRG4BC40W-STRRP INFINEON TECHNOLOGIES IRG4BC40W-STRRP.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Produkt ist nicht verfügbar
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IRL530NSTRLPBF IRL530NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22275DBBD2C88F1A303005056AB0C4F&compId=irl530nspbf.pdf?ci_sign=4b011cbadfca1f27978a0c2fa18b673b18bbb418 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Case: D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Technology: HEXFET®
Gate-source voltage: ±20V
Features of semiconductor devices: logic level
Kind of channel: enhancement
auf Bestellung 4005 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
59+1.22 EUR
73+0.99 EUR
100+0.89 EUR
250+0.77 EUR
500+0.68 EUR
800+0.61 EUR
1600+0.53 EUR
Mindestbestellmenge: 41
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IRFR1205TRPBF IRFR1205TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C020074448F1A303005056AB0C4F&compId=irfr1205pbf.pdf?ci_sign=ebd78e3c793ea692537d498167bbd2ef9f3ad95b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 37A
Kind of channel: enhancement
Power dissipation: 107W
Drain-source voltage: 55V
Type of transistor: N-MOSFET
auf Bestellung 1887 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
153+0.47 EUR
162+0.44 EUR
178+0.4 EUR
191+0.38 EUR
205+0.35 EUR
500+0.32 EUR
Mindestbestellmenge: 120
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IRFSL7437PBF IRFSL7437PBF INFINEON TECHNOLOGIES irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.55 EUR
46+1.56 EUR
Mindestbestellmenge: 29
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AIGW50N65F5XKSA1 AIGW50N65F5XKSA1 INFINEON TECHNOLOGIES AIGW50N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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SPP21N50C3 SPP21N50C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C4CF9426D074A&compId=SPx21N50C3.pdf?ci_sign=85647eac47dcdd1dec3420a747691d62a2a87b0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.65 EUR
22+3.29 EUR
25+2.89 EUR
Mindestbestellmenge: 20
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BTS428L2 BTS428L2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697BC696E816469&compId=BTS428L2.pdf?ci_sign=7cc3270de69e551af4d4ebf76921c7f4173e8300 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Mounting: SMD
Number of channels: 1
Case: TO252
On-state resistance: 50mΩ
Output voltage: 4.75...41V
Technology: Classic PROFET; SIPMOS™
Kind of output: N-Channel
auf Bestellung 2284 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.49 EUR
20+3.68 EUR
100+2.97 EUR
250+2.7 EUR
500+2.5 EUR
1000+2.49 EUR
Mindestbestellmenge: 14
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BTS4300SGA BTS4300SGA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697EBCBF94D4469&compId=BTS4300SGA.pdf?ci_sign=e49e04d0c15b1f902ef4a0f745ff132452f09ec6 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1949 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.66 EUR
42+1.73 EUR
48+1.52 EUR
100+1.24 EUR
250+1.1 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 27
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BTS441TG BTS441TG INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C33B22E7E469&compId=BTS441TG.pdf?ci_sign=9e857110a35ffa7d63a6a20043dd527b680290cc Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Mounting: SMD
Number of channels: 1
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.28 EUR
18+4 EUR
100+3.56 EUR
Mindestbestellmenge: 14
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BTS4880R BTS4880R INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697F28E666E4469&compId=BTS4880R.pdf?ci_sign=60127cda9a86104980dbd3b093f21379556676f9 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 625mA; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.1 EUR
10+11.18 EUR
100+9.19 EUR
500+8.84 EUR
Mindestbestellmenge: 6
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IRFB3207ZGPBF IRFB3207ZGPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B2F0373A9EF1A303005056AB0C4F&compId=irfb3207zgpbf.pdf?ci_sign=0f418ffa88abe060375491d71bbeed16a4ddf772 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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IRFB3207ZPBF IRFB3207ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6C6F1A6F5005056AB5A8F&compId=irfs3207zpbf.pdf?ci_sign=d9a881f5e50cc8dfcd68d3e1192d7da63798c2e4 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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IRFB4019PBF IRFB4019PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B705F1A6F5005056AB5A8F&compId=irfb4019pbf.pdf?ci_sign=35a3c85c464dacc468771d93b7f858d4900a1526 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1078 Stücke:
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BSS138WH6327XTSA1 BSS138WH6327XTSA1 INFINEON TECHNOLOGIES BSS138WH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1123 Stücke:
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968+0.074 EUR
1053+0.068 EUR
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BSS138WH6433XTMA1 BSS138WH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.12A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
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IRFB4020PBF IRFB4020PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B70CF1A6F5005056AB5A8F&compId=irfb4020pbf.pdf?ci_sign=da17b13cfdcfe4ba2c35db0a367f16527501b197 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 803 Stücke:
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IRFS7530TRL7PP IRFS7530TRL7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6B3468D04A1EC&compId=irfs7530-7ppbf.pdf?ci_sign=efcd65c1b71b20dce22caa7810184cdbec219b05 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhancement
Trade name: StrongIRFET
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IRS2184PBF IRS2184PBF INFINEON TECHNOLOGIES irs2184.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
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AIKW75N60CTXKSA1 AIKW75N60CTXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB1C37C3CAD820&compId=AIKW75N60CT.pdf?ci_sign=30f321bc96abbc3e7898d3a39c8acc9ee7412c40 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Gate charge: 470nC
Turn-on time: 69ns
Turn-off time: 365ns
Gate-emitter voltage: ±20V
Collector current: 75A
Power dissipation: 428W
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Case: TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Technology: TRENCHSTOP™
Mounting: THT
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IRFB4510PBF IRFB4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA418D2E1B5EA&compId=IRFB4510PBF.pdf?ci_sign=9339082daf1e6b0bfcc37dddedca7d1124a64194 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 238 Stücke:
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62+1.16 EUR
69+1.04 EUR
75+0.96 EUR
100+0.89 EUR
200+0.82 EUR
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IRFU5305PBF IRFU5305PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4BBA30AFBF1A303005056AB0C4F&compId=irfr5305pbf.pdf?ci_sign=7de46f4b9e6f21d503ab5b0e162e5f7e5c9fdf70 description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 1013 Stücke:
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SMBT3904SH6327XTSA1 SMBT3904SH6327XTSA1 INFINEON TECHNOLOGIES SMBT3904SH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Type of transistor: NPN
Case: SOT363
auf Bestellung 88 Stücke:
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AIKW20N60CTXKSA1 AIKW20N60CTXKSA1 INFINEON TECHNOLOGIES AIKW20N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
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IRLR8103VTRPBF IRLR8103VTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22280CD565EB1F1A303005056AB0C4F&compId=irlr8103vpbf.pdf?ci_sign=492ac37580de93cbbb628a22be73f48fd48cb98a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRFB4615PBF IRFB4615PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A76F1A6F5005056AB5A8F&compId=irfb4615pbf.pdf?ci_sign=b017e04afb02e0c37365c5a851437e30722be4bc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
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IRFML8244TRPBF IRFML8244TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BE17A30519F1A303005056AB0C4F&compId=irfml8244pbf.pdf?ci_sign=af2734a37e55aa8f941c567ed413359dae2c08ef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 4916 Stücke:
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250+0.29 EUR
302+0.24 EUR
345+0.21 EUR
544+0.13 EUR
705+0.1 EUR
1000+0.093 EUR
3000+0.09 EUR
Mindestbestellmenge: 250
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BCR185WH6327 BCR185WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Kind of transistor: BRT
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SPP80P06PHXKSA1 SPP80P06PHXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92E343ED03F1CC&compId=SPP80P06PHXKSA1-DTE.pdf?ci_sign=0fdc7be718405dc45ca2e85200515e93fcb1a285 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Kind of package: tube
Technology: SIPMOS™
Case: PG-TO220-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: THT
Polarisation: unipolar
Drain current: -80A
Drain-source voltage: -60V
On-state resistance: 23mΩ
Gate-source voltage: ±20V
Power dissipation: 340W
auf Bestellung 43 Stücke:
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IRS2186STRPBF IRS2186STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
auf Bestellung 1363 Stücke:
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33+2.22 EUR
40+1.82 EUR
50+1.6 EUR
100+1.53 EUR
250+1.44 EUR
1000+1.43 EUR
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AIGW50N65H5XKSA1 AIGW50N65H5XKSA1 INFINEON TECHNOLOGIES AIGW50N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 184ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
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AIKP20N60CTAKSA1 AIKP20N60CTAKSA1 INFINEON TECHNOLOGIES AIKP20N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
auf Bestellung 304 Stücke:
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15+5 EUR
17+4.43 EUR
18+3.98 EUR
50+3.7 EUR
250+3.69 EUR
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AIKB20N60CTATMA1 AIKB20N60CTATMA1 INFINEON TECHNOLOGIES AIKB20N60CT.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
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IKQ120N60TXKSA1 INFINEON TECHNOLOGIES IKQ120N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
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IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 INFINEON TECHNOLOGIES IKQ120N60TA.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
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TT122N22KOFHPSA2 TT122N22KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE30ABE97A0469&compId=TT122N22KOF.pdf?ci_sign=f2d3a1a41575001d0d829df324176bb20fd556d8 Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IRFR15N20DTRPBF IRFR15N20DTRPBF INFINEON TECHNOLOGIES IRFR15N20DTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
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IPB073N15N5ATMA1 IPB073N15N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA30C702DB42143&compId=IPB073N15N5.pdf?ci_sign=af20e0604e1889601409b069b73fbbca7c50096a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Gate charge: 49nC
On-state resistance: 7.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 81A
Drain-source voltage: 150V
Power dissipation: 214W
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TO263-3
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XMC1202T028X0032ABXUMA1 XMC1202T028X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-28
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
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XMC1202T028X0064ABXUMA1 XMC1202T028X0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-28
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
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AIHD10N60RATMA1 AIHD10N60RATMA1 INFINEON TECHNOLOGIES AIHD10N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRFB4610PBF IRFB4610PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A6FF1A6F5005056AB5A8F&compId=irfs4610.pdf?ci_sign=f82b81a9499178560620d52f14838fe735b30f24 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO220AB
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 14mΩ
Gate-source voltage: ±20V
Drain current: 73A
Drain-source voltage: 100V
Power dissipation: 190W
Kind of package: tube
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.63 EUR
29+2.52 EUR
32+2.26 EUR
34+2.16 EUR
50+2 EUR
100+1.89 EUR
200+1.77 EUR
Mindestbestellmenge: 28
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IRFB4620PBF IRFB4620PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A7DF1A6F5005056AB5A8F&compId=irfb4620pbf.pdf?ci_sign=42d0628fba08e7dbecd4a027551ca7bbbb81baaf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
28+2.6 EUR
33+2.22 EUR
Mindestbestellmenge: 25
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BFP183WH6327XTSA1 BFP183WH6327XTSA1 INFINEON TECHNOLOGIES bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.45W
Case: SOT343
Mounting: SMD
Collector current: 65mA
Collector-emitter voltage: 12V
Current gain: 70...140
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 2214 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
368+0.19 EUR
417+0.17 EUR
486+0.15 EUR
538+0.13 EUR
Mindestbestellmenge: 295
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BFP196WH6327 BFP196WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D83F728EC11C&compId=BFP196WH6327-dte.pdf?ci_sign=6513198cf786f3ecf728a401abed3d957006453c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Mounting: SMD
Frequency: 5GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 5672 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
212+0.34 EUR
343+0.21 EUR
421+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.1 EUR
Mindestbestellmenge: 162
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IMW65R107M1HXKSA1 Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247
Kind of channel: enhancement
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IMZA65R107M1HXKSA1 Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Case: TO247-4
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP020N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9965511A9A11C&compId=IPP020N06NAKSA1-DTE.pdf?ci_sign=83fbe3c4ddd538ca4cd145e6a0d205e58922a5e7
IPP020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB014N06NATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C7CC0918A11C&compId=IPB014N06N-DTE.pdf?ci_sign=f6b6dd04892827bdcb42159d802d491c958ff46c
IPB014N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.35 EUR
18+3.99 EUR
23+3.2 EUR
26+2.83 EUR
Mindestbestellmenge: 17
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IPB034N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E22AC82A411C&compId=IPB034N06L3G-DTE.pdf?ci_sign=e2d349a57cd9a28e9c7dbde0c8d7a4b00ed0cf76
IPB034N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BTS452T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C802CDDF0469&compId=BTS452T.pdf?ci_sign=5923cb0a238c32d8e287782b944aa70f07c70e0a
BTS452T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IRLR8256TRPBF pVersion=0046&contRep=ZT&docId=E2228106FCAB3DF1A303005056AB0C4F&compId=irlr8256pbf.pdf?ci_sign=4c2cc703f2abc3f8398209309a4ead7e3bfd184a
IRLR8256TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AIGW40N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA17D8D761D820&compId=AIGW40N65F5.pdf?ci_sign=9f18b81e1388b36fe28a61d1a64aea2a56a17800
AIGW40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.26 EUR
Mindestbestellmenge: 10
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AIGW40N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA1E5F77139820&compId=AIGW40N65H5.pdf?ci_sign=2a5ebfdaf36f3a1c5d8093fdcc4ae6cc86adb1bc
AIGW40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 160ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.82 EUR
11+6.94 EUR
30+6.38 EUR
60+6.05 EUR
90+5.86 EUR
Mindestbestellmenge: 9
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AIKW40N65DF5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA8ECB779AF820&compId=AIKW40N65DF5.pdf?ci_sign=30e5760d338ea5f7c09287ec1f507604de3d7c43
AIKW40N65DF5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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AIKW40N65DH5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDAA097324C1820&compId=AIKW40N65DH5.pdf?ci_sign=eb08576828ba5aea9692fc921bdf5039bc724b57
AIKW40N65DH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IRFH5010TRPBF pVersion=0046&contRep=ZT&docId=E221B4FD5221A9F1A303005056AB0C4F&compId=irfh5010pbf.pdf?ci_sign=dc0d60716a5924fc56a535cd67f663c50e1ec509
IRFH5010TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5015TRPBF pVersion=0046&contRep=ZT&docId=E221B51A9A0F40F1A303005056AB0C4F&compId=irfh5015pbf.pdf?ci_sign=eb6ae4a5494ec8a6c1560e3bc7b19829447ecba1
IRFH5015TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AIKW50N65DH5XKSA1 AIKW50N65DH5XKSA1.pdf
AIKW50N65DH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 256ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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AIKW50N65DF5XKSA1 AIKW50N65DF5.pdf
AIKW50N65DF5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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BTS4141N description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E631CB72C469&compId=BTS4141N.pdf?ci_sign=64b0e0c8fb54d7ae515db22073e7a17b310fd5c8
BTS4141N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output voltage: 12...45V
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 3130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
28+2.62 EUR
100+2.06 EUR
250+1.84 EUR
500+1.69 EUR
1000+1.63 EUR
Mindestbestellmenge: 19
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IRG4BC40W-STRRP IRG4BC40W-STRRP.pdf
IRG4BC40W-STRRP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Produkt ist nicht verfügbar
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IRL530NSTRLPBF pVersion=0046&contRep=ZT&docId=E22275DBBD2C88F1A303005056AB0C4F&compId=irl530nspbf.pdf?ci_sign=4b011cbadfca1f27978a0c2fa18b673b18bbb418
IRL530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Case: D2PAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Technology: HEXFET®
Gate-source voltage: ±20V
Features of semiconductor devices: logic level
Kind of channel: enhancement
auf Bestellung 4005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
59+1.22 EUR
73+0.99 EUR
100+0.89 EUR
250+0.77 EUR
500+0.68 EUR
800+0.61 EUR
1600+0.53 EUR
Mindestbestellmenge: 41
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IRFR1205TRPBF pVersion=0046&contRep=ZT&docId=E221C020074448F1A303005056AB0C4F&compId=irfr1205pbf.pdf?ci_sign=ebd78e3c793ea692537d498167bbd2ef9f3ad95b
IRFR1205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 37A
Kind of channel: enhancement
Power dissipation: 107W
Drain-source voltage: 55V
Type of transistor: N-MOSFET
auf Bestellung 1887 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
153+0.47 EUR
162+0.44 EUR
178+0.4 EUR
191+0.38 EUR
205+0.35 EUR
500+0.32 EUR
Mindestbestellmenge: 120
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IRFSL7437PBF irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2
IRFSL7437PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
46+1.56 EUR
Mindestbestellmenge: 29
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AIGW50N65F5XKSA1 AIGW50N65F5.pdf
AIGW50N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Produkt ist nicht verfügbar
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SPP21N50C3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C4CF9426D074A&compId=SPx21N50C3.pdf?ci_sign=85647eac47dcdd1dec3420a747691d62a2a87b0b
SPP21N50C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.65 EUR
22+3.29 EUR
25+2.89 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BTS428L2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697BC696E816469&compId=BTS428L2.pdf?ci_sign=7cc3270de69e551af4d4ebf76921c7f4173e8300
BTS428L2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Mounting: SMD
Number of channels: 1
Case: TO252
On-state resistance: 50mΩ
Output voltage: 4.75...41V
Technology: Classic PROFET; SIPMOS™
Kind of output: N-Channel
auf Bestellung 2284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.49 EUR
20+3.68 EUR
100+2.97 EUR
250+2.7 EUR
500+2.5 EUR
1000+2.49 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BTS4300SGA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697EBCBF94D4469&compId=BTS4300SGA.pdf?ci_sign=e49e04d0c15b1f902ef4a0f745ff132452f09ec6
BTS4300SGA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
42+1.73 EUR
48+1.52 EUR
100+1.24 EUR
250+1.1 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BTS441TG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C33B22E7E469&compId=BTS441TG.pdf?ci_sign=9e857110a35ffa7d63a6a20043dd527b680290cc
BTS441TG
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Mounting: SMD
Number of channels: 1
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.28 EUR
18+4 EUR
100+3.56 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BTS4880R pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697F28E666E4469&compId=BTS4880R.pdf?ci_sign=60127cda9a86104980dbd3b093f21379556676f9
BTS4880R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 625mA; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.1 EUR
10+11.18 EUR
100+9.19 EUR
500+8.84 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3207ZGPBF pVersion=0046&contRep=ZT&docId=E221B2F0373A9EF1A303005056AB0C4F&compId=irfb3207zgpbf.pdf?ci_sign=0f418ffa88abe060375491d71bbeed16a4ddf772
IRFB3207ZGPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3207ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B6C6F1A6F5005056AB5A8F&compId=irfs3207zpbf.pdf?ci_sign=d9a881f5e50cc8dfcd68d3e1192d7da63798c2e4
IRFB3207ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4019PBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B705F1A6F5005056AB5A8F&compId=irfb4019pbf.pdf?ci_sign=35a3c85c464dacc468771d93b7f858d4900a1526
IRFB4019PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1078 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
45+1.6 EUR
51+1.42 EUR
59+1.22 EUR
100+1.01 EUR
250+0.76 EUR
500+0.64 EUR
750+0.63 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
BSS138WH6327XTSA1 BSS138WH6327XTSA1.pdf
BSS138WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
807+0.089 EUR
910+0.079 EUR
968+0.074 EUR
1053+0.068 EUR
1123+0.064 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BSS138WH6433XTMA1 Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f
BSS138WH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.12A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4020PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B70CF1A6F5005056AB5A8F&compId=irfb4020pbf.pdf?ci_sign=da17b13cfdcfe4ba2c35db0a367f16527501b197
IRFB4020PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 803 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
66+1.09 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7530TRL7PP pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6B3468D04A1EC&compId=irfs7530-7ppbf.pdf?ci_sign=efcd65c1b71b20dce22caa7810184cdbec219b05
IRFS7530TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 457 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.62 EUR
26+2.85 EUR
28+2.56 EUR
100+2.16 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRS2184PBF irs2184.pdf
IRS2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKW75N60CTXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB1C37C3CAD820&compId=AIKW75N60CT.pdf?ci_sign=30f321bc96abbc3e7898d3a39c8acc9ee7412c40
AIKW75N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Gate charge: 470nC
Turn-on time: 69ns
Turn-off time: 365ns
Gate-emitter voltage: ±20V
Collector current: 75A
Power dissipation: 428W
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Case: TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Technology: TRENCHSTOP™
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA418D2E1B5EA&compId=IRFB4510PBF.pdf?ci_sign=9339082daf1e6b0bfcc37dddedca7d1124a64194
IRFB4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
62+1.16 EUR
69+1.04 EUR
75+0.96 EUR
100+0.89 EUR
200+0.82 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRFU5305PBF description pVersion=0046&contRep=ZT&docId=E221C4BBA30AFBF1A303005056AB0C4F&compId=irfr5305pbf.pdf?ci_sign=7de46f4b9e6f21d503ab5b0e162e5f7e5c9fdf70
IRFU5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
95+0.76 EUR
106+0.68 EUR
124+0.58 EUR
150+0.57 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
SMBT3904SH6327XTSA1 SMBT3904SH6327.pdf
SMBT3904SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Type of transistor: NPN
Case: SOT363
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
AIKW20N60CTXKSA1 AIKW20N60CT.pdf
AIKW20N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8103VTRPBF pVersion=0046&contRep=ZT&docId=E22280CD565EB1F1A303005056AB0C4F&compId=irlr8103vpbf.pdf?ci_sign=492ac37580de93cbbb628a22be73f48fd48cb98a
IRLR8103VTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4615PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A76F1A6F5005056AB5A8F&compId=irfb4615pbf.pdf?ci_sign=b017e04afb02e0c37365c5a851437e30722be4bc
IRFB4615PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IRFML8244TRPBF pVersion=0046&contRep=ZT&docId=E221BE17A30519F1A303005056AB0C4F&compId=irfml8244pbf.pdf?ci_sign=af2734a37e55aa8f941c567ed413359dae2c08ef
IRFML8244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 4916 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
302+0.24 EUR
345+0.21 EUR
544+0.13 EUR
705+0.1 EUR
1000+0.093 EUR
3000+0.09 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BCR185WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba
BCR185WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Kind of transistor: BRT
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
769+0.093 EUR
Mindestbestellmenge: 769
Im Einkaufswagen  Stück im Wert von  UAH
SPP80P06PHXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92E343ED03F1CC&compId=SPP80P06PHXKSA1-DTE.pdf?ci_sign=0fdc7be718405dc45ca2e85200515e93fcb1a285
SPP80P06PHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Kind of package: tube
Technology: SIPMOS™
Case: PG-TO220-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: THT
Polarisation: unipolar
Drain current: -80A
Drain-source voltage: -60V
On-state resistance: 23mΩ
Gate-source voltage: ±20V
Power dissipation: 340W
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.45 EUR
25+2.96 EUR
26+2.8 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRS2186STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
auf Bestellung 1363 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.22 EUR
40+1.82 EUR
50+1.6 EUR
100+1.53 EUR
250+1.44 EUR
1000+1.43 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
AIGW50N65H5XKSA1 AIGW50N65H5.pdf
AIGW50N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 184ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKP20N60CTAKSA1 AIKP20N60CT.pdf
AIKP20N60CTAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
17+4.43 EUR
18+3.98 EUR
50+3.7 EUR
250+3.69 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
AIKB20N60CTATMA1 AIKB20N60CT.pdf
AIKB20N60CTATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Produkt ist nicht verfügbar
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IKQ120N60TXKSA1 IKQ120N60T.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
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IKQ120N60TAXKSA1 IKQ120N60TA.pdf
IKQ120N60TAXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
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TT122N22KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE30ABE97A0469&compId=TT122N22KOF.pdf?ci_sign=f2d3a1a41575001d0d829df324176bb20fd556d8
TT122N22KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFR15N20DTRPBF IRFR15N20DTRPBF.pdf
IRFR15N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPB073N15N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA30C702DB42143&compId=IPB073N15N5.pdf?ci_sign=af20e0604e1889601409b069b73fbbca7c50096a
IPB073N15N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Gate charge: 49nC
On-state resistance: 7.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 81A
Drain-source voltage: 150V
Power dissipation: 214W
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TO263-3
Produkt ist nicht verfügbar
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XMC1202T028X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1202T028X0032ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-28
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
Produkt ist nicht verfügbar
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XMC1202T028X0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1202T028X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-28
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
Produkt ist nicht verfügbar
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AIHD10N60RATMA1 AIHD10N60R.pdf
AIHD10N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRFB4610PBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284A6FF1A6F5005056AB5A8F&compId=irfs4610.pdf?ci_sign=f82b81a9499178560620d52f14838fe735b30f24
IRFB4610PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO220AB
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 14mΩ
Gate-source voltage: ±20V
Drain current: 73A
Drain-source voltage: 100V
Power dissipation: 190W
Kind of package: tube
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
29+2.52 EUR
32+2.26 EUR
34+2.16 EUR
50+2 EUR
100+1.89 EUR
200+1.77 EUR
Mindestbestellmenge: 28
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IRFB4620PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A7DF1A6F5005056AB5A8F&compId=irfb4620pbf.pdf?ci_sign=42d0628fba08e7dbecd4a027551ca7bbbb81baaf
IRFB4620PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
28+2.6 EUR
33+2.22 EUR
Mindestbestellmenge: 25
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BFP183WH6327XTSA1 bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613
BFP183WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.45W
Case: SOT343
Mounting: SMD
Collector current: 65mA
Collector-emitter voltage: 12V
Current gain: 70...140
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 2214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
368+0.19 EUR
417+0.17 EUR
486+0.15 EUR
538+0.13 EUR
Mindestbestellmenge: 295
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BFP196WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D83F728EC11C&compId=BFP196WH6327-dte.pdf?ci_sign=6513198cf786f3ecf728a401abed3d957006453c
BFP196WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Mounting: SMD
Frequency: 5GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 5672 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
212+0.34 EUR
343+0.21 EUR
421+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.1 EUR
Mindestbestellmenge: 162
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