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IR2153PBF IR2153PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
Produkt ist nicht verfügbar
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IR2153SPBF IR2153SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
35+2.04 EUR
46+1.57 EUR
49+1.49 EUR
Mindestbestellmenge: 32
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IR2153STRPBF IR2153STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8A926E51A75EA&compId=IR2153DPBF.pdf?ci_sign=467d7c213ad01b739971cced2176d04c6b7f1be5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Power: 625mW
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
Produkt ist nicht verfügbar
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BTS740S2 BTS740S2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD64020DBFAD5EA&compId=BTS740S2.pdf?ci_sign=b9ff1acd5dab2c97ff91b1b5b6eaa731690ef1ae description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.31 EUR
13+5.52 EUR
Mindestbestellmenge: 7
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IRLL014NTRPBF IRLL014NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227AD7F1FDCDF1A303005056AB0C4F&compId=irll014npbf.pdf?ci_sign=1d1f9f334532dd3711cbf8c73e9f89d36ccd8d49 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
162+0.44 EUR
201+0.36 EUR
329+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 114
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IRLL024NTRPBF IRLL024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825B6F1A6F5005056AB5A8F&compId=irll024n.pdf?ci_sign=a7f9a48b2cd1b39663d6bdd21504bf6984076499 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3305 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
106+0.68 EUR
212+0.34 EUR
225+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 75
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IRLL024ZTRPBF IRLL024ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227AFB9D7DF4F1A303005056AB0C4F&compId=irll024zpbf.pdf?ci_sign=0b4e180c4fd58d02cd536dccae36d45fc3c30fc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2156 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
104+0.69 EUR
133+0.54 EUR
141+0.51 EUR
143+0.5 EUR
Mindestbestellmenge: 73
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BC850BE6327 BC850BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Polarisation: bipolar
Mounting: SMD
auf Bestellung 8534 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
468+0.15 EUR
711+0.1 EUR
837+0.086 EUR
1214+0.059 EUR
1283+0.056 EUR
Mindestbestellmenge: 334
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BC850CE6327 BC850CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Polarisation: bipolar
Mounting: SMD
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
432+0.17 EUR
539+0.13 EUR
598+0.12 EUR
Mindestbestellmenge: 358
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IRFR9024NTRLPBF IRFR9024NTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR9024NTRPBF IRFR9024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3254 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
86+0.84 EUR
200+0.36 EUR
211+0.34 EUR
Mindestbestellmenge: 52
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AUIRFR9024NTRL INFINEON TECHNOLOGIES INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -44A
Gate charge: 19nC
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Produkt ist nicht verfügbar
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IRL3705NPBF IRL3705NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E895D7DA3F1A6F5005056AB5A8F&compId=irl3705n.pdf?ci_sign=6cab1fdf2340cfadae101f342b21237f36d915c9 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 65.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 904 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
49+1.47 EUR
90+0.8 EUR
95+0.76 EUR
Mindestbestellmenge: 38
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IRL3705NSTRLPBF IRL3705NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22274DD1ABBBBF1A303005056AB0C4F&compId=irl3705nspbf.pdf?ci_sign=def286927a4ec6a16efcd8a4c3fbd0ce993a0cee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRL3705ZSTRLPBF IRL3705ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF112ECD9F715EA&compId=IRL3705ZSTRLPBF.pdf?ci_sign=c916a4aa1628d516334b00db556866bd3c12c24c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB3034PBF IRLB3034PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E895D7E3DF1A6F5005056AB5A8F&compId=irlb3034pbf.pdf?ci_sign=7508af5c90c4bc752a92b5bab13419c960913739 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.58 EUR
26+2.8 EUR
28+2.65 EUR
Mindestbestellmenge: 16
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IRLB3036PBF IRLB3036PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582577F1A6F5005056AB5A8F&compId=irlb3036pbf.pdf?ci_sign=fb0a0d81cd0373dfbb1fe542694c88309414bd06 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.95 EUR
21+3.5 EUR
22+3.3 EUR
Mindestbestellmenge: 15
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IRLB3813PBF IRLB3813PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58257EF1A6F5005056AB5A8F&compId=irlb3813pbf.pdf?ci_sign=b8af6369f50e2b78444ab244deef2c85b9ccbb1a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 784 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.1 EUR
38+1.9 EUR
43+1.69 EUR
50+1.46 EUR
53+1.37 EUR
Mindestbestellmenge: 35
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IRLB4030PBF IRLB4030PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582585F1A6F5005056AB5A8F&compId=irlb4030pbf.pdf?ci_sign=9c1dd0d165f7be0768858b97ea06809eb52e6a97 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
29+2.52 EUR
31+2.37 EUR
Mindestbestellmenge: 19
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IRLB4132PBF IRLB4132PBF INFINEON TECHNOLOGIES IRLB4132PbF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 620A
auf Bestellung 519 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
95+0.76 EUR
152+0.47 EUR
160+0.45 EUR
500+0.43 EUR
Mindestbestellmenge: 55
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IRLB8314PBF IRLB8314PBF INFINEON TECHNOLOGIES irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
55+1.3 EUR
Mindestbestellmenge: 44
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IRLB8721PBF IRLB8721PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58258CF1A6F5005056AB5A8F&compId=irlb8721pbf.pdf?ci_sign=863ed5203a8c2654f73f74cd31359630f2c24a6b description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 7.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
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IRLB8748PBF IRLB8748PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58259AF1A6F5005056AB5A8F&compId=irlb8748pbf.pdf?ci_sign=2d8572277f7342dea88e1d211ba84d481801601d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
68+1.06 EUR
75+0.95 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 47
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IRF7303TRPBF IRF7303TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F74C2DCE370F1A303005056AB0C4F&compId=irf7303pbf.pdf?ci_sign=a9fcab7b64f09e84c0ca4b84501bec51c69c4040 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7306TRPBF IRF7306TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F751DDD019EF1A303005056AB0C4F&compId=irf7306pbf.pdf?ci_sign=244ded6274750851bd5e8e76cc1513b6407fc75b description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3657 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
111+0.65 EUR
167+0.43 EUR
177+0.4 EUR
2000+0.39 EUR
Mindestbestellmenge: 76
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IRF7309TRPBF IRF7309TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219D362A89F7F1A303005056AB0C4F&compId=irf7309pbf.pdf?ci_sign=0e8c5129e3b87970c95a289d54aff0ba7db3c46c description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3796 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
90+0.8 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 74
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AUIRF7309QTR AUIRF7309QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D741EF1A6F5005056AB5A8F&compId=auirf7309q.pdf?ci_sign=22ef9c2ac4bfdc45d4b48d901ef86cafc5fe8476 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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IRLR2905ZTRPBF IRLR2905ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF11ACA61E3B5EA&compId=IRLR2905ZTRPBF.pdf?ci_sign=59e8f0844430a9591a8928366ede90beebafec1a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2120 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
76+0.94 EUR
85+0.85 EUR
149+0.48 EUR
158+0.45 EUR
2000+0.44 EUR
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AUIRLR2905ZTRL INFINEON TECHNOLOGIES AUIRLR2905Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR7540TRPBF IRFR7540TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BA14A75BF6469&compId=IRFR7540TRPBF.pdf?ci_sign=2a8c7614e344aeb42fd258726595f737ea02f922 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGW15N120H3FKSA1 IGW15N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACF653E938BEB1BF&compId=IGW15N120H3-DTE.pdf?ci_sign=bb785fa6984b96b34d09dda036a6fa741b55c450 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 63 Stücke:
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12+6.15 EUR
21+3.47 EUR
22+3.29 EUR
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IHW15N120E1XKSA1 IHW15N120E1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB9FA296781820&compId=IHW15N120E1.pdf?ci_sign=476c39c6f7509bba9d8e18c54ceedde48ef8c47d Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 62.2W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 1940ns
Turn-off time: 1450ns
auf Bestellung 41 Stücke:
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16+4.76 EUR
30+2.39 EUR
32+2.25 EUR
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IHW15N120R3FKSA1 IHW15N120R3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC54BEBB74D820&compId=IHW15N120R3.pdf?ci_sign=4a3a7bc4b67f8ad8cc77cc34fe03f8e75e2309cc Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 127W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 165nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-off time: 346ns
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.38 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 14
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IKW15N120BH6XKSA1 IKW15N120BH6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0997F3635D8BF&compId=IKW15N120BH6.pdf?ci_sign=7d5116a5ba65f8a2b5cf2e55505c6de35ec86261 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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IKW15N120T2FKSA1 IKW15N120T2FKSA1 INFINEON TECHNOLOGIES IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 235W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 93nC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Turn-on time: 57ns
Turn-off time: 457ns
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.68 EUR
17+4.29 EUR
18+4.05 EUR
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IRLML6344TRPBF IRLML6344TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C38EFFD63F1A303005056AB0C4F&compId=irlml6344pbf.pdf?ci_sign=6700929195bb537664b6eb3055d32d59fcbdd1ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 13304 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
272+0.26 EUR
368+0.19 EUR
400+0.18 EUR
424+0.17 EUR
633+0.11 EUR
Mindestbestellmenge: 193
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IRLML0060TRPBF IRLML0060TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825D9F1A6F5005056AB5A8F&compId=irlml0060pbf.pdf?ci_sign=a3bbe00dfbb4fe089d07e90242d3a3d58078067c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 18182 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
185+0.39 EUR
247+0.29 EUR
278+0.26 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 120
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IGW75N65H5XKSA1 IGW75N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB9A3F0AC89820&compId=IGW75N65H5.pdf?ci_sign=86e4907099baaae3cd322374fa086d9863321d24 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Gate charge: 160nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.76 EUR
16+4.49 EUR
17+4.23 EUR
Mindestbestellmenge: 10
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IGZ75N65H5XKSA1 IGZ75N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B388A040FCAFA8&compId=IGZ75N65H5XKSA1-DTE.pdf?ci_sign=9b8ff2f3fa39c5d9f86e4765ed220908d6a403a3 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Gate charge: 166nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 37ns
Turn-off time: 415ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65EH5XKSA1 IKW75N65EH5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2F3AF72F3F820&compId=IKW75N65EH5.pdf?ci_sign=92ba1a012fb6f2015e7a08b8c44cac70c5ea05cc Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 160nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
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IKW75N65ES5XKSA1 IKW75N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2FA50F9BEF820&compId=IKW75N65ES5.pdf?ci_sign=f17c5f5d53b9ed23579e020b6774d9134f3ac3f1 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 164nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Turn-on time: 86ns
Turn-off time: 185ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.15 EUR
12+6.12 EUR
Mindestbestellmenge: 9
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IKZ75N65EL5XKSA1 IKZ75N65EL5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5905519D753D7&compId=IKZ75N65EL5.pdf?ci_sign=974195b6848179160a1b9261f57f7646ab0e186b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 268W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 436nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Turn-on time: 143ns
Turn-off time: 325ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKZ75N65ES5XKSA1 IKZ75N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC57EF09C8793D7&compId=IKZ75N65ES5.pdf?ci_sign=44911182ca481715e7b5316763a9fce579f0b12d Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 164nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Turn-on time: 71ns
Turn-off time: 427ns
Produkt ist nicht verfügbar
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SPW35N60CFD SPW35N60CFD INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F7B3559DE33E28&compId=SPW35N60CFD.pdf?ci_sign=f745343adc80ebd46908d5a119ad112816112262 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF540ZPBF IRF540ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B74F1A6F5005056AB5A8F&compId=irf540z.pdf?ci_sign=dc37eeef6533ef9813e70c1f6eb24e960c6946c6 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 627 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
59+1.23 EUR
104+0.69 EUR
110+0.65 EUR
500+0.63 EUR
Mindestbestellmenge: 44
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AUIRF540Z AUIRF540Z INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D5278F1A6F5005056AB5A8F&compId=auirf540z.pdf?ci_sign=dcd4031d8e0c9a9a6e63edd15265d106dcb29c64 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGW40T120FKSA1 IGW40T120FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFA4BB55332D3D1&compId=IGW40T120.pdf?ci_sign=6d2b9cb6711cb598e9b5b115f856a534ead69852 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.99 EUR
11+6.51 EUR
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IKW40T120FKSA1 IKW40T120FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B8FDEA7B2C616143&compId=IKW40T120FKSA1.pdf?ci_sign=710142ea5a638ff69a833db040662bf28761863b Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
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IRF9530NSTRLPBF IRF9530NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B182AD9381F1A303005056AB0C4F&compId=irf9530nspbf.pdf?ci_sign=a436f2e5acc92f8ab7878b6b87b589830d094258 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Drain-source voltage: -100V
Drain current: -14A
Type of transistor: P-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
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IRFL014NTRPBF IRFL014NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BD5B487D8FF1A303005056AB0C4F&compId=irfl014npbf.pdf?ci_sign=b06b941a782485ee8a69673d6ed3d787b81bf574 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IGB10N60TATMA1 IGB10N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B30CC332344FA8&compId=IGB10N60T-DTE.pdf?ci_sign=90664c525528d16e0bd90c7ad7dc5eade2a10283 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 600V
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
50+1.46 EUR
64+1.13 EUR
67+1.07 EUR
Mindestbestellmenge: 40
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IGP10N60TXKSA1 IGP10N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B318DF300C4FA8&compId=IGP10N60T-DTE.pdf?ci_sign=f59911f7c955bf848f9d1c58b355b7bf48440da2 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 18A
Collector-emitter voltage: 600V
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
46+1.57 EUR
53+1.37 EUR
55+1.3 EUR
100+1.26 EUR
Mindestbestellmenge: 40
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IKA10N60TXKSA1 IKA10N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD0C97D3F67820&compId=IKA10N60T.pdf?ci_sign=fadea912e4a2c8f589f65f7cdedf1af4db1bc744 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector current: 7.2A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 250ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB10N60TATMA1 IKB10N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD3C93FDBDF820&compId=IKB10N60T.pdf?ci_sign=ac3f6735529e5b82d20ec8c5b3cf138128615c0e Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 253ns
Collector-emitter voltage: 600V
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.09 EUR
36+2.03 EUR
44+1.66 EUR
46+1.57 EUR
100+1.52 EUR
Mindestbestellmenge: 24
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IKD10N60RATMA1 IKD10N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE350DCA63820&compId=IKD10N60R.pdf?ci_sign=ecb612de43b087b36cf1e0a347077a0e414f088b Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 24ns
Turn-off time: 331ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RFATMA1 IKD10N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE9EBA7B4D820&compId=IKD10N60RF.pdf?ci_sign=ff07afe3ccf9dab31c2c7d5cd2c6e1307060f858 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 27ns
Turn-off time: 186ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IRLU024NPBF IRLU024NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227DACF5C79FF1A303005056AB0C4F&compId=irlr024npbf.pdf?ci_sign=3af2f11bc76fdb545611693e306e0c4c895c7f1f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
140+0.51 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 88
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PVG612 PVG612 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C055BB1D2B1EF1A6F5005056AB5A8F&compId=pvg612.pdf?ci_sign=844dea53a3a719b09f98495db57b0c504b20629c description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 0.15Ω
Contacts configuration: SPST-NO
Max. operating current: 2.4A
Mounting: THT
Relay variant: MOSFET
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
auf Bestellung 671 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.98 EUR
11+6.51 EUR
Mindestbestellmenge: 8
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PVG612ASPBF PVG612ASPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C01432D75681EC&compId=PVG612ASPBF.pdf?ci_sign=1eae45f1548871cd056215af4d35e6ac06cf940e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 4A; 0÷60VAC; -60÷60VDC
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 0.1Ω
Contacts configuration: SPST-NO
Max. operating current: 4A
Mounting: SMT
Relay variant: MOSFET
Control current: 5...25mA
Operate time: 3.5ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.85 EUR
6+13.03 EUR
Mindestbestellmenge: 3
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PVG612S PVG612S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED38DFF40ADB28329E4&compId=PVG612S.PDF?ci_sign=2b01806b51665ad59e0c5ed73c06ae8713c4d143 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 0.15Ω
Contacts configuration: SPST-NO
Max. operating current: 2.4A
Mounting: SMT
Relay variant: MOSFET
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.04 EUR
10+7.44 EUR
Mindestbestellmenge: 6
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IR2153PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46
IR2153PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
Produkt ist nicht verfügbar
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IR2153SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46
IR2153SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
35+2.04 EUR
46+1.57 EUR
49+1.49 EUR
Mindestbestellmenge: 32
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IR2153STRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8A926E51A75EA&compId=IR2153DPBF.pdf?ci_sign=467d7c213ad01b739971cced2176d04c6b7f1be5
IR2153STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Power: 625mW
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
Produkt ist nicht verfügbar
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BTS740S2 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD64020DBFAD5EA&compId=BTS740S2.pdf?ci_sign=b9ff1acd5dab2c97ff91b1b5b6eaa731690ef1ae
BTS740S2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.31 EUR
13+5.52 EUR
Mindestbestellmenge: 7
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IRLL014NTRPBF description pVersion=0046&contRep=ZT&docId=E2227AD7F1FDCDF1A303005056AB0C4F&compId=irll014npbf.pdf?ci_sign=1d1f9f334532dd3711cbf8c73e9f89d36ccd8d49
IRLL014NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
162+0.44 EUR
201+0.36 EUR
329+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 114
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IRLL024NTRPBF description pVersion=0046&contRep=ZT&docId=E1C04E8F5825B6F1A6F5005056AB5A8F&compId=irll024n.pdf?ci_sign=a7f9a48b2cd1b39663d6bdd21504bf6984076499
IRLL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
106+0.68 EUR
212+0.34 EUR
225+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024ZTRPBF pVersion=0046&contRep=ZT&docId=E2227AFB9D7DF4F1A303005056AB0C4F&compId=irll024zpbf.pdf?ci_sign=0b4e180c4fd58d02cd536dccae36d45fc3c30fc0
IRLL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
104+0.69 EUR
133+0.54 EUR
141+0.51 EUR
143+0.5 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
BC850BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832
BC850BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Polarisation: bipolar
Mounting: SMD
auf Bestellung 8534 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
468+0.15 EUR
711+0.1 EUR
837+0.086 EUR
1214+0.059 EUR
1283+0.056 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BC850CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832
BC850CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Polarisation: bipolar
Mounting: SMD
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
432+0.17 EUR
539+0.13 EUR
598+0.12 EUR
Mindestbestellmenge: 358
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IRFR9024NTRLPBF pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9
IRFR9024NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR9024NTRPBF description pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9
IRFR9024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
86+0.84 EUR
200+0.36 EUR
211+0.34 EUR
Mindestbestellmenge: 52
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AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -44A
Gate charge: 19nC
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Produkt ist nicht verfügbar
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IRL3705NPBF description pVersion=0046&contRep=ZT&docId=E1C04E895D7DA3F1A6F5005056AB5A8F&compId=irl3705n.pdf?ci_sign=6cab1fdf2340cfadae101f342b21237f36d915c9
IRL3705NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 65.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 904 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
49+1.47 EUR
90+0.8 EUR
95+0.76 EUR
Mindestbestellmenge: 38
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IRL3705NSTRLPBF pVersion=0046&contRep=ZT&docId=E22274DD1ABBBBF1A303005056AB0C4F&compId=irl3705nspbf.pdf?ci_sign=def286927a4ec6a16efcd8a4c3fbd0ce993a0cee
IRL3705NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705ZSTRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF112ECD9F715EA&compId=IRL3705ZSTRLPBF.pdf?ci_sign=c916a4aa1628d516334b00db556866bd3c12c24c
IRL3705ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3034PBF pVersion=0046&contRep=ZT&docId=E1C04E895D7E3DF1A6F5005056AB5A8F&compId=irlb3034pbf.pdf?ci_sign=7508af5c90c4bc752a92b5bab13419c960913739
IRLB3034PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.58 EUR
26+2.8 EUR
28+2.65 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3036PBF pVersion=0046&contRep=ZT&docId=E1C04E8F582577F1A6F5005056AB5A8F&compId=irlb3036pbf.pdf?ci_sign=fb0a0d81cd0373dfbb1fe542694c88309414bd06
IRLB3036PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.95 EUR
21+3.5 EUR
22+3.3 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3813PBF pVersion=0046&contRep=ZT&docId=E1C04E8F58257EF1A6F5005056AB5A8F&compId=irlb3813pbf.pdf?ci_sign=b8af6369f50e2b78444ab244deef2c85b9ccbb1a
IRLB3813PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 784 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
38+1.9 EUR
43+1.69 EUR
50+1.46 EUR
53+1.37 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRLB4030PBF pVersion=0046&contRep=ZT&docId=E1C04E8F582585F1A6F5005056AB5A8F&compId=irlb4030pbf.pdf?ci_sign=9c1dd0d165f7be0768858b97ea06809eb52e6a97
IRLB4030PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
29+2.52 EUR
31+2.37 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IRLB4132PBF IRLB4132PbF.pdf
IRLB4132PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 620A
auf Bestellung 519 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
95+0.76 EUR
152+0.47 EUR
160+0.45 EUR
500+0.43 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRLB8314PBF irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f
IRLB8314PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
55+1.3 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRLB8721PBF description pVersion=0046&contRep=ZT&docId=E1C04E8F58258CF1A6F5005056AB5A8F&compId=irlb8721pbf.pdf?ci_sign=863ed5203a8c2654f73f74cd31359630f2c24a6b
IRLB8721PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 7.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRLB8748PBF pVersion=0046&contRep=ZT&docId=E1C04E8F58259AF1A6F5005056AB5A8F&compId=irlb8748pbf.pdf?ci_sign=2d8572277f7342dea88e1d211ba84d481801601d
IRLB8748PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
68+1.06 EUR
75+0.95 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IRF7303TRPBF pVersion=0046&contRep=ZT&docId=E21F74C2DCE370F1A303005056AB0C4F&compId=irf7303pbf.pdf?ci_sign=a9fcab7b64f09e84c0ca4b84501bec51c69c4040
IRF7303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7306TRPBF description pVersion=0046&contRep=ZT&docId=E21F751DDD019EF1A303005056AB0C4F&compId=irf7306pbf.pdf?ci_sign=244ded6274750851bd5e8e76cc1513b6407fc75b
IRF7306TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3657 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
111+0.65 EUR
167+0.43 EUR
177+0.4 EUR
2000+0.39 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IRF7309TRPBF description pVersion=0046&contRep=ZT&docId=E2219D362A89F7F1A303005056AB0C4F&compId=irf7309pbf.pdf?ci_sign=0e8c5129e3b87970c95a289d54aff0ba7db3c46c
IRF7309TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3796 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
90+0.8 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7309QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D741EF1A6F5005056AB5A8F&compId=auirf7309q.pdf?ci_sign=22ef9c2ac4bfdc45d4b48d901ef86cafc5fe8476
AUIRF7309QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2905ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF11ACA61E3B5EA&compId=IRLR2905ZTRPBF.pdf?ci_sign=59e8f0844430a9591a8928366ede90beebafec1a
IRLR2905ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
76+0.94 EUR
85+0.85 EUR
149+0.48 EUR
158+0.45 EUR
2000+0.44 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLR2905ZTRL AUIRLR2905Z.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7540TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BA14A75BF6469&compId=IRFR7540TRPBF.pdf?ci_sign=2a8c7614e344aeb42fd258726595f737ea02f922
IRFR7540TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW15N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACF653E938BEB1BF&compId=IGW15N120H3-DTE.pdf?ci_sign=bb785fa6984b96b34d09dda036a6fa741b55c450
IGW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Technology: TRENCHSTOP™ 3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.15 EUR
21+3.47 EUR
22+3.29 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IHW15N120E1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB9FA296781820&compId=IHW15N120E1.pdf?ci_sign=476c39c6f7509bba9d8e18c54ceedde48ef8c47d
IHW15N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 62.2W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 1940ns
Turn-off time: 1450ns
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.76 EUR
30+2.39 EUR
32+2.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IHW15N120R3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC54BEBB74D820&compId=IHW15N120R3.pdf?ci_sign=4a3a7bc4b67f8ad8cc77cc34fe03f8e75e2309cc
IHW15N120R3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 127W
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 165nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-off time: 346ns
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.38 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120BH6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0997F3635D8BF&compId=IKW15N120BH6.pdf?ci_sign=7d5116a5ba65f8a2b5cf2e55505c6de35ec86261
IKW15N120BH6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120T2FKSA1 IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd
IKW15N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 235W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 93nC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Turn-on time: 57ns
Turn-off time: 457ns
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.68 EUR
17+4.29 EUR
18+4.05 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6344TRPBF pVersion=0046&contRep=ZT&docId=E2227C38EFFD63F1A303005056AB0C4F&compId=irlml6344pbf.pdf?ci_sign=6700929195bb537664b6eb3055d32d59fcbdd1ae
IRLML6344TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 13304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
272+0.26 EUR
368+0.19 EUR
400+0.18 EUR
424+0.17 EUR
633+0.11 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0060TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825D9F1A6F5005056AB5A8F&compId=irlml0060pbf.pdf?ci_sign=a3bbe00dfbb4fe089d07e90242d3a3d58078067c
IRLML0060TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 18182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
185+0.39 EUR
247+0.29 EUR
278+0.26 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB9A3F0AC89820&compId=IGW75N65H5.pdf?ci_sign=86e4907099baaae3cd322374fa086d9863321d24
IGW75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Gate charge: 160nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.76 EUR
16+4.49 EUR
17+4.23 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGZ75N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B388A040FCAFA8&compId=IGZ75N65H5XKSA1-DTE.pdf?ci_sign=9b8ff2f3fa39c5d9f86e4765ed220908d6a403a3
IGZ75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Gate charge: 166nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 37ns
Turn-off time: 415ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65EH5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2F3AF72F3F820&compId=IKW75N65EH5.pdf?ci_sign=92ba1a012fb6f2015e7a08b8c44cac70c5ea05cc
IKW75N65EH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 160nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
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IKW75N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2FA50F9BEF820&compId=IKW75N65ES5.pdf?ci_sign=f17c5f5d53b9ed23579e020b6774d9134f3ac3f1
IKW75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 164nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Turn-on time: 86ns
Turn-off time: 185ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.15 EUR
12+6.12 EUR
Mindestbestellmenge: 9
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IKZ75N65EL5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5905519D753D7&compId=IKZ75N65EL5.pdf?ci_sign=974195b6848179160a1b9261f57f7646ab0e186b
IKZ75N65EL5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 268W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 436nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Turn-on time: 143ns
Turn-off time: 325ns
Produkt ist nicht verfügbar
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IKZ75N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC57EF09C8793D7&compId=IKZ75N65ES5.pdf?ci_sign=44911182ca481715e7b5316763a9fce579f0b12d
IKZ75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 164nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Turn-on time: 71ns
Turn-off time: 427ns
Produkt ist nicht verfügbar
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SPW35N60CFD pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F7B3559DE33E28&compId=SPW35N60CFD.pdf?ci_sign=f745343adc80ebd46908d5a119ad112816112262
SPW35N60CFD
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF540ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7B74F1A6F5005056AB5A8F&compId=irf540z.pdf?ci_sign=dc37eeef6533ef9813e70c1f6eb24e960c6946c6
IRF540ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 627 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
59+1.23 EUR
104+0.69 EUR
110+0.65 EUR
500+0.63 EUR
Mindestbestellmenge: 44
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AUIRF540Z pVersion=0046&contRep=ZT&docId=E1C045883D5278F1A6F5005056AB5A8F&compId=auirf540z.pdf?ci_sign=dcd4031d8e0c9a9a6e63edd15265d106dcb29c64
AUIRF540Z
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGW40T120FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88DFA4BB55332D3D1&compId=IGW40T120.pdf?ci_sign=6d2b9cb6711cb598e9b5b115f856a534ead69852
IGW40T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.99 EUR
11+6.51 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IKW40T120FKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B8FDEA7B2C616143&compId=IKW40T120FKSA1.pdf?ci_sign=710142ea5a638ff69a833db040662bf28761863b
IKW40T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IRF9530NSTRLPBF pVersion=0046&contRep=ZT&docId=E221B182AD9381F1A303005056AB0C4F&compId=irf9530nspbf.pdf?ci_sign=a436f2e5acc92f8ab7878b6b87b589830d094258
IRF9530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Drain-source voltage: -100V
Drain current: -14A
Type of transistor: P-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
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IRFL014NTRPBF description pVersion=0046&contRep=ZT&docId=E221BD5B487D8FF1A303005056AB0C4F&compId=irfl014npbf.pdf?ci_sign=b06b941a782485ee8a69673d6ed3d787b81bf574
IRFL014NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGB10N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B30CC332344FA8&compId=IGB10N60T-DTE.pdf?ci_sign=90664c525528d16e0bd90c7ad7dc5eade2a10283
IGB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 600V
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
50+1.46 EUR
64+1.13 EUR
67+1.07 EUR
Mindestbestellmenge: 40
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IGP10N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B318DF300C4FA8&compId=IGP10N60T-DTE.pdf?ci_sign=f59911f7c955bf848f9d1c58b355b7bf48440da2
IGP10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 18A
Collector-emitter voltage: 600V
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
46+1.57 EUR
53+1.37 EUR
55+1.3 EUR
100+1.26 EUR
Mindestbestellmenge: 40
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IKA10N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD0C97D3F67820&compId=IKA10N60T.pdf?ci_sign=fadea912e4a2c8f589f65f7cdedf1af4db1bc744
IKA10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector current: 7.2A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 250ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IKB10N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD3C93FDBDF820&compId=IKB10N60T.pdf?ci_sign=ac3f6735529e5b82d20ec8c5b3cf138128615c0e
IKB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector current: 18A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 253ns
Collector-emitter voltage: 600V
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
36+2.03 EUR
44+1.66 EUR
46+1.57 EUR
100+1.52 EUR
Mindestbestellmenge: 24
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IKD10N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE350DCA63820&compId=IKD10N60R.pdf?ci_sign=ecb612de43b087b36cf1e0a347077a0e414f088b
IKD10N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 24ns
Turn-off time: 331ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IKD10N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDE9EBA7B4D820&compId=IKD10N60RF.pdf?ci_sign=ff07afe3ccf9dab31c2c7d5cd2c6e1307060f858
IKD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 27ns
Turn-off time: 186ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IRLU024NPBF description pVersion=0046&contRep=ZT&docId=E2227DACF5C79FF1A303005056AB0C4F&compId=irlr024npbf.pdf?ci_sign=3af2f11bc76fdb545611693e306e0c4c895c7f1f
IRLU024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
140+0.51 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 88
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PVG612 description pVersion=0046&contRep=ZT&docId=E1C055BB1D2B1EF1A6F5005056AB5A8F&compId=pvg612.pdf?ci_sign=844dea53a3a719b09f98495db57b0c504b20629c
PVG612
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 0.15Ω
Contacts configuration: SPST-NO
Max. operating current: 2.4A
Mounting: THT
Relay variant: MOSFET
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
auf Bestellung 671 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.98 EUR
11+6.51 EUR
Mindestbestellmenge: 8
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PVG612ASPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C01432D75681EC&compId=PVG612ASPBF.pdf?ci_sign=1eae45f1548871cd056215af4d35e6ac06cf940e
PVG612ASPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 4A; 0÷60VAC; -60÷60VDC
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 0.1Ω
Contacts configuration: SPST-NO
Max. operating current: 4A
Mounting: SMT
Relay variant: MOSFET
Control current: 5...25mA
Operate time: 3.5ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.85 EUR
6+13.03 EUR
Mindestbestellmenge: 3
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PVG612S description pVersion=0046&contRep=ZT&docId=005056AB752F1ED38DFF40ADB28329E4&compId=PVG612S.PDF?ci_sign=2b01806b51665ad59e0c5ed73c06ae8713c4d143
PVG612S
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Operating temperature: -40...85°C
Case: DIP6
On-state resistance: 0.15Ω
Contacts configuration: SPST-NO
Max. operating current: 2.4A
Mounting: SMT
Relay variant: MOSFET
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.04 EUR
10+7.44 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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