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SPD50P03LGBTMA1 SPD50P03LGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DA9E7E5A51CC&compId=SPD50P03LGBTMA1-DTE.pdf?ci_sign=a20986a621e71ec1c6f409668776e8d55dea2f8c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Technology: OptiMOS™ P
Mounting: SMD
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Power dissipation: 150W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PG-TO252-5
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
32+2.25 EUR
61+1.17 EUR
65+1.1 EUR
Mindestbestellmenge: 26
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IRFB4127PBF IRFB4127PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B721F1A6F5005056AB5A8F&compId=irfb4127pbf.pdf?ci_sign=ddafc47e6f7b0c1ae62e3c82167c1dd582ee261f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 866 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
48+1.5 EUR
51+1.42 EUR
Mindestbestellmenge: 39
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IRFB7537PBF IRFB7537PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A69262455901EC&compId=irfs7537pbf.pdf?ci_sign=5f35c07031438beffb94243d453935f7d2efe081 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.63 EUR
36+1.99 EUR
43+1.69 EUR
68+1.06 EUR
72+1 EUR
Mindestbestellmenge: 28
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IRFB7430PBF IRFB7430PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA56B08FDB5EA&compId=IRFB7430PBF.pdf?ci_sign=06bb1ab19637c4d745e3676bfe9c624f7cca507e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
24+3.02 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 21
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IRFB5620PBF IRFB5620PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A99F1A6F5005056AB5A8F&compId=irfb5620pbf.pdf?ci_sign=dba5e26ac2c7961fde53bfdd1882c9038aa6ace9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
39+1.87 EUR
41+1.76 EUR
Mindestbestellmenge: 31
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IRFB3207PBF IRFB3207PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.05 EUR
Mindestbestellmenge: 24
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IPA50R280CEXKSA2 IPA50R280CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDED9A02745B1CC&compId=IPA50R280CE-DTE.pdf?ci_sign=a066060a8e4fa79cb0804ec9d84befd498ce3cdc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 7.5A
Gate-source voltage: ±20V
Power dissipation: 30.4W
Drain-source voltage: 500V
Kind of package: tube
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
66+1.1 EUR
81+0.89 EUR
86+0.84 EUR
Mindestbestellmenge: 35
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IPA50R950CEXKSA2 IPA50R950CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDC265D9431CC&compId=IPA50R950CE-DTE.pdf?ci_sign=2024861169eaf55680772217cf6cf99de93e0ce2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.95Ω
Drain current: 2.4A
Power dissipation: 25.7W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
110+0.64 EUR
Mindestbestellmenge: 95
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IPA50R250CPXKSA1 IPA50R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE91C89A0F71CC&compId=IPA50R250CP-DTE.pdf?ci_sign=0316e1852350f0edf6d6295d7a00b4c2acf40bde Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 33W
Drain-source voltage: 500V
Kind of package: tube
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
37+1.97 EUR
39+1.86 EUR
Mindestbestellmenge: 26
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IPA50R190CEXKSA2 IPA50R190CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDF08C2E171CC&compId=IPA50R190CE-DTE.pdf?ci_sign=e005fb1f8201a70c20ce97ed35abebd84cf20329 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 18.5A
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Produkt ist nicht verfügbar
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IPA50R500CEXKSA2 IPA50R500CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDA485961D1CC&compId=IPA50R500CE-DTE.pdf?ci_sign=bebb744a20f727ec0b8f0c747fb2266d676ae43c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.5Ω
Drain current: 3.4A
Power dissipation: 28W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Produkt ist nicht verfügbar
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IPA50R399CPXKSA1 IPA50R399CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE8B1E4535F1CC&compId=IPA50R399CP-DTE.pdf?ci_sign=42760d96673f7b515b2b7d8fe7e964159cb01c2e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.399Ω
Drain current: 3.3A
Power dissipation: 8.3W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Produkt ist nicht verfügbar
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IPA50R520CPXKSA1 IPA50R520CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE900DBF53D1CC&compId=IPA50R520CP-DTE.pdf?ci_sign=48b324500d98190fb60fd8261ca2a53504008c15 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.52Ω
Drain current: 7.1A
Power dissipation: 66W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Produkt ist nicht verfügbar
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IPA50R800CEXKSA2 IPA50R800CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEE17E8DD7F1CC&compId=IPA50R800CE-DTE.pdf?ci_sign=e60562202a376529f147e9141e1e4c6bd962109d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.8Ω
Drain current: 2.6A
Power dissipation: 26.4W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Produkt ist nicht verfügbar
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IPB110N20N3LF IPB110N20N3LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CDD33F73280749&compId=IPB110N20N3LF.pdf?ci_sign=57c3a81a5f34e089235de10d0a3e0e068655a3a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP110N20NAAKSA1 IPP110N20NAAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8F45FEA3211C&compId=IPP110N20NA-DTE.pdf?ci_sign=70b94064ff7df98367394afbee4bceb42f627658 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB019N06L3GATMA1 IPB019N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D2357E44611C&compId=IPB019N06L3G-DTE.pdf?ci_sign=4b0168ba4c06a8a1305f4cb61675e11cd42afead Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
auf Bestellung 961 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.6 EUR
32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 20
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IPB019N08N3G
+1
 		IPB019N08N3G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAB6DE35C77DE27&compId=IPB019N08N3G-DTE.pdf?ci_sign=07ce8f1173d501dc930f45ad7fa2fde175466987 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Produkt ist nicht verfügbar
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IPB019N08N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB019N08N5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163cf77bd7313c8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 180A; 224W; TO263-7; SMT
Mounting: SMD
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 224W
Gate charge: 123nC
Case: TO263-7
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.55 EUR
Mindestbestellmenge: 1000
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IPN80R900P7ATMA1 IPN80R900P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE698C6F5A53D1&compId=IPN80R900P7.pdf?ci_sign=1cb3ac008409bbbe434f89ad91f7ebd4ca924304 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BFP640FH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50mA; 200mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 110
Mounting: SMD
Frequency: 40GHz
Application: automotive industry
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000
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2ED300C17STROHSBPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0 Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Topology: IGBT half-bridge
Mounting: PCB
Operating temperature: -40...85°C
Supply voltage: 14...16V DC
Output current: 30A
Voltage class: 1.7kV
Application: for medium and high power application
Frequency: 60kHz
Case: AG-EICE
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Type of semiconductor module: gate driver board
Kind of output: IGBT driver
Produkt ist nicht verfügbar
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IPD025N06NATMA1 IPD025N06NATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698F4A16FDCE11C&compId=IPD025N06N-DTE.pdf?ci_sign=4dbecac78d95e03a4f1e5519dd4a358c3fbeeacd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 2.5mΩ
Drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 167W
auf Bestellung 1629 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
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BC858BE6327 BC858BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.099 EUR
1115+0.064 EUR
1260+0.057 EUR
1450+0.049 EUR
1535+0.047 EUR
Mindestbestellmenge: 725
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BC858CE6327 BC858CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
Mindestbestellmenge: 100
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BCV62BE6327 BCV62BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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BCV62BE6327HTSA1 INFINEON TECHNOLOGIES bcv62.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a5795f0230 Category: PNP SMD transistors
Description: Transistor: PNP
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
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BSC011N03LSATMA1 BSC011N03LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C250285237211C&compId=BSC011N03LS-DTE.pdf?ci_sign=8507a022bc1117b9821b6b91046b3e0aa399e520 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC011N03LSIATMA1 BSC011N03LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2520F0C19C11C&compId=BSC011N03LSI-DTE.pdf?ci_sign=03f69ceb77307fa7fb2c04624043f8eedeb8807d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI4435DYTRPBF SI4435DYTRPBF INFINEON TECHNOLOGIES si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2438 Stücke:
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85+0.85 EUR
166+0.43 EUR
175+0.41 EUR
1000+0.39 EUR
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IPW60R099C6FKSA1 IPW60R099C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952403C1FAD1BF&compId=IPW60R099C6-DTE.pdf?ci_sign=0ff4e9262369219235dac83c27672666e66fcd60 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPD70R900P7SAUMA1 IPD70R900P7SAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1AC19AA1CA259&compId=IPD70R900P7S.pdf?ci_sign=746f7b1943fba9fedd7a1fb78f582f1027187f3b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.9Ω
Drain current: 3.5A
Power dissipation: 30.5W
Gate-source voltage: ±16V
Technology: CoolMOS™
Drain-source voltage: 700V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R900P7SATMA1 IPN70R900P7SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA526BEF5A6143&compId=IPN70R900P7S.pdf?ci_sign=003efb79197d315493859738eb83e97ee6904935 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Version: ESD
Case: PG-SOT223
Mounting: SMD
Polarisation: unipolar
Gate charge: 6.8nC
On-state resistance: 0.9Ω
Drain current: 3.5A
Power dissipation: 6.5W
Gate-source voltage: ±16V
Technology: CoolMOS™ P7
Drain-source voltage: 700V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDH02G120C5XKSA1 IDH02G120C5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB83CA5339CAFA8&compId=IDH02G120C5-DTE.pdf?ci_sign=c0376ff0f508097055bda59dd691f57aee3224bb Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Leakage current: 1.2µA
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
auf Bestellung 474 Stücke:
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SPP08N80C3XKSA1 INFINEON TECHNOLOGIES SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.56Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 60nC
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BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2C1BE091BC11C&compId=BSC035N10NS5-DTE.pdf?ci_sign=589da9a4f76ac36f6caf01e2ad3007e47efb0526 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSO207PHXUMA1 BSO207PHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9201B98D6931CC&compId=BSO207PHXUMA1-dte.pdf?ci_sign=2811562156a4c4d38b1a34d9d8a1b5a7805321a2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 1.6W
Technology: OptiMOS™ P
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222+0.32 EUR
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BSO211PHXUMA1 BSO211PHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9204080D26B1CC&compId=BSO211PHXUMA1-dte.pdf?ci_sign=da04bb6283d5de44bff6ec37f2de7d95f13433e2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 1.6W
Technology: OptiMOS™ P
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225+0.32 EUR
237+0.3 EUR
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XMC750 WATT MOTOR CONTROL KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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IPB037N06N3GATMA1 IPB037N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E74A0389411C&compId=IPB037N06N3G-DTE.pdf?ci_sign=1cbda32d942d894f603cf1626a1387244c7938ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP410N30NAKSA1 IPP410N30NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC940FD466611C&compId=IPP410N30N-DTE.pdf?ci_sign=91131cadec2f63016d12e8ee56b378c8247df703 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 44A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
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7+10.74 EUR
10+7.29 EUR
11+6.89 EUR
Mindestbestellmenge: 7
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CY7C1354C-166AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXCT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1356C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1360C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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BSZ040N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 69W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 69W
Gate-source voltage: 20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 6.6nC
Kind of channel: enhancement
Electrical mounting: SMT
Polarisation: N
auf Bestellung 20000 Stücke:
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TD500N16KOFHPSA1 TD500N16KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F074C00DE6469&compId=TD500N16KOF.pdf?ci_sign=a76074aa4c25a809d85ac6baf5ea26212c9adddb Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF TD500N18KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F09F7C6E98469&compId=TD500N18KOF.pdf?ci_sign=b5a5084591cd6c5813d9dbba92c7a98591c03055 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TT570N16KOFHPSA2 TT570N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEA028F7668469&compId=TT570N16KOF.pdf?ci_sign=836c3171bb9fd8f725f7e3605bd91df313dc3657 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ500N18KOF TZ500N18KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEDB421FFB2469&compId=TZ500N18KOF.pdf?ci_sign=f3bce80d1edaa89ee6344fdd3d38926f29f3b8f8 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N16KOFHPSA2 TT500N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9BDBDF1BC469&compId=TT500N16KOF.pdf?ci_sign=34f28fc7e78abf45d9c7c865df8bb681c3dbe1e0 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ600N16KOF TZ600N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEE563BB628469&compId=TZ600N16KOF.pdf?ci_sign=771810b9df81adea268ef9a17ac11c2ffb879b45 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N14KOFHPSA2 TT500N14KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9A079D1DE469&compId=TT500N14KOF.pdf?ci_sign=b0aadc52c9d5d3fdf46bc40fc9a88cd19f84b3f5 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ500N16KOF TZ500N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CED8FCD3EB6469&compId=TZ500N16KOF.pdf?ci_sign=e342fac28e657edb4f639ad89f6a091993a51e35 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFR5410TRRPBF IRFR5410TRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR191E6327 BCR191E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C577575678A469&compId=BCR191.pdf?ci_sign=95bdeac9f9d591f952a3f1e72481882e571b369f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Mounting: SMD
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Kind of transistor: BRT
Frequency: 200MHz
Type of transistor: PNP
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
Mindestbestellmenge: 200
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IRG4PSH71UDPBF IRG4PSH71UDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D7D64A4F08F1A303005056AB0C4F&compId=irg4psh71udpbf.pdf?ci_sign=289c39444487fc58635bd7d1764bde616b177c4c description Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IR21834STRPBF INFINEON TECHNOLOGIES ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.1 EUR
Mindestbestellmenge: 2500
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SPD50P03LGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DA9E7E5A51CC&compId=SPD50P03LGBTMA1-DTE.pdf?ci_sign=a20986a621e71ec1c6f409668776e8d55dea2f8c
SPD50P03LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Technology: OptiMOS™ P
Mounting: SMD
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Power dissipation: 150W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PG-TO252-5
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
32+2.25 EUR
61+1.17 EUR
65+1.1 EUR
Mindestbestellmenge: 26
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IRFB4127PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B721F1A6F5005056AB5A8F&compId=irfb4127pbf.pdf?ci_sign=ddafc47e6f7b0c1ae62e3c82167c1dd582ee261f
IRFB4127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 866 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
48+1.5 EUR
51+1.42 EUR
Mindestbestellmenge: 39
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IRFB7537PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A69262455901EC&compId=irfs7537pbf.pdf?ci_sign=5f35c07031438beffb94243d453935f7d2efe081
IRFB7537PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
36+1.99 EUR
43+1.69 EUR
68+1.06 EUR
72+1 EUR
Mindestbestellmenge: 28
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IRFB7430PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA56B08FDB5EA&compId=IRFB7430PBF.pdf?ci_sign=06bb1ab19637c4d745e3676bfe9c624f7cca507e
IRFB7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
24+3.02 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 21
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IRFB5620PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A99F1A6F5005056AB5A8F&compId=irfb5620pbf.pdf?ci_sign=dba5e26ac2c7961fde53bfdd1882c9038aa6ace9
IRFB5620PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
39+1.87 EUR
41+1.76 EUR
Mindestbestellmenge: 31
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IRFB3207PBF pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b
IRFB3207PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 180nC
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.05 EUR
Mindestbestellmenge: 24
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IPA50R280CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDED9A02745B1CC&compId=IPA50R280CE-DTE.pdf?ci_sign=a066060a8e4fa79cb0804ec9d84befd498ce3cdc
IPA50R280CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 7.5A
Gate-source voltage: ±20V
Power dissipation: 30.4W
Drain-source voltage: 500V
Kind of package: tube
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
66+1.1 EUR
81+0.89 EUR
86+0.84 EUR
Mindestbestellmenge: 35
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IPA50R950CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDC265D9431CC&compId=IPA50R950CE-DTE.pdf?ci_sign=2024861169eaf55680772217cf6cf99de93e0ce2
IPA50R950CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.95Ω
Drain current: 2.4A
Power dissipation: 25.7W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
110+0.64 EUR
Mindestbestellmenge: 95
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IPA50R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE91C89A0F71CC&compId=IPA50R250CP-DTE.pdf?ci_sign=0316e1852350f0edf6d6295d7a00b4c2acf40bde
IPA50R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 33W
Drain-source voltage: 500V
Kind of package: tube
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
37+1.97 EUR
39+1.86 EUR
Mindestbestellmenge: 26
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IPA50R190CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDF08C2E171CC&compId=IPA50R190CE-DTE.pdf?ci_sign=e005fb1f8201a70c20ce97ed35abebd84cf20329
IPA50R190CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 18.5A
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Produkt ist nicht verfügbar
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IPA50R500CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDA485961D1CC&compId=IPA50R500CE-DTE.pdf?ci_sign=bebb744a20f727ec0b8f0c747fb2266d676ae43c
IPA50R500CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.5Ω
Drain current: 3.4A
Power dissipation: 28W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Produkt ist nicht verfügbar
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IPA50R399CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE8B1E4535F1CC&compId=IPA50R399CP-DTE.pdf?ci_sign=42760d96673f7b515b2b7d8fe7e964159cb01c2e
IPA50R399CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.399Ω
Drain current: 3.3A
Power dissipation: 8.3W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Produkt ist nicht verfügbar
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IPA50R520CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE900DBF53D1CC&compId=IPA50R520CP-DTE.pdf?ci_sign=48b324500d98190fb60fd8261ca2a53504008c15
IPA50R520CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.52Ω
Drain current: 7.1A
Power dissipation: 66W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Produkt ist nicht verfügbar
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IPA50R800CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEE17E8DD7F1CC&compId=IPA50R800CE-DTE.pdf?ci_sign=e60562202a376529f147e9141e1e4c6bd962109d
IPA50R800CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.8Ω
Drain current: 2.6A
Power dissipation: 26.4W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Produkt ist nicht verfügbar
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IPB110N20N3LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CDD33F73280749&compId=IPB110N20N3LF.pdf?ci_sign=57c3a81a5f34e089235de10d0a3e0e068655a3a9
IPB110N20N3LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP110N20NAAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8F45FEA3211C&compId=IPP110N20NA-DTE.pdf?ci_sign=70b94064ff7df98367394afbee4bceb42f627658
IPP110N20NAAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB019N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D2357E44611C&compId=IPB019N06L3G-DTE.pdf?ci_sign=4b0168ba4c06a8a1305f4cb61675e11cd42afead
IPB019N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
auf Bestellung 961 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.6 EUR
32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 20
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IPB019N08N3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAB6DE35C77DE27&compId=IPB019N08N3G-DTE.pdf?ci_sign=07ce8f1173d501dc930f45ad7fa2fde175466987
IPB019N08N3G
+1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Produkt ist nicht verfügbar
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IPB019N08N5ATMA1 Infineon-IPB019N08N5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163cf77bd7313c8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 180A; 224W; TO263-7; SMT
Mounting: SMD
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 224W
Gate charge: 123nC
Case: TO263-7
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.55 EUR
Mindestbestellmenge: 1000
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IPN80R900P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE698C6F5A53D1&compId=IPN80R900P7.pdf?ci_sign=1cb3ac008409bbbe434f89ad91f7ebd4ca924304
IPN80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BFP640FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50mA; 200mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 110
Mounting: SMD
Frequency: 40GHz
Application: automotive industry
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
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2ED300C17STROHSBPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Topology: IGBT half-bridge
Mounting: PCB
Operating temperature: -40...85°C
Supply voltage: 14...16V DC
Output current: 30A
Voltage class: 1.7kV
Application: for medium and high power application
Frequency: 60kHz
Case: AG-EICE
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Type of semiconductor module: gate driver board
Kind of output: IGBT driver
Produkt ist nicht verfügbar
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IPD025N06NATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698F4A16FDCE11C&compId=IPD025N06N-DTE.pdf?ci_sign=4dbecac78d95e03a4f1e5519dd4a358c3fbeeacd
IPD025N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 2.5mΩ
Drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 167W
auf Bestellung 1629 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
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BC858BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4
BC858BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
725+0.099 EUR
1115+0.064 EUR
1260+0.057 EUR
1450+0.049 EUR
1535+0.047 EUR
Mindestbestellmenge: 725
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BC858CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4
BC858CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
Mindestbestellmenge: 100
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BCV62BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24
BCV62BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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BCV62BE6327HTSA1 bcv62.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a5795f0230
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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BSC011N03LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C250285237211C&compId=BSC011N03LS-DTE.pdf?ci_sign=8507a022bc1117b9821b6b91046b3e0aa399e520
BSC011N03LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC011N03LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2520F0C19C11C&compId=BSC011N03LSI-DTE.pdf?ci_sign=03f69ceb77307fa7fb2c04624043f8eedeb8807d
BSC011N03LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2438 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
85+0.85 EUR
166+0.43 EUR
175+0.41 EUR
1000+0.39 EUR
Mindestbestellmenge: 61
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IPW60R099C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952403C1FAD1BF&compId=IPW60R099C6-DTE.pdf?ci_sign=0ff4e9262369219235dac83c27672666e66fcd60
IPW60R099C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD70R900P7SAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1AC19AA1CA259&compId=IPD70R900P7S.pdf?ci_sign=746f7b1943fba9fedd7a1fb78f582f1027187f3b
IPD70R900P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.9Ω
Drain current: 3.5A
Power dissipation: 30.5W
Gate-source voltage: ±16V
Technology: CoolMOS™
Drain-source voltage: 700V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R900P7SATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA526BEF5A6143&compId=IPN70R900P7S.pdf?ci_sign=003efb79197d315493859738eb83e97ee6904935
IPN70R900P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Version: ESD
Case: PG-SOT223
Mounting: SMD
Polarisation: unipolar
Gate charge: 6.8nC
On-state resistance: 0.9Ω
Drain current: 3.5A
Power dissipation: 6.5W
Gate-source voltage: ±16V
Technology: CoolMOS™ P7
Drain-source voltage: 700V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDH02G120C5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB83CA5339CAFA8&compId=IDH02G120C5-DTE.pdf?ci_sign=c0376ff0f508097055bda59dd691f57aee3224bb
IDH02G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Leakage current: 1.2µA
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
35+2.1 EUR
36+1.99 EUR
250+1.96 EUR
Mindestbestellmenge: 29
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SPP08N80C3XKSA1 SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.56Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 60nC
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.64 EUR
Mindestbestellmenge: 50
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BSC035N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2C1BE091BC11C&compId=BSC035N10NS5-DTE.pdf?ci_sign=589da9a4f76ac36f6caf01e2ad3007e47efb0526
BSC035N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO207PHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9201B98D6931CC&compId=BSO207PHXUMA1-dte.pdf?ci_sign=2811562156a4c4d38b1a34d9d8a1b5a7805321a2
BSO207PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 1.6W
Technology: OptiMOS™ P
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
222+0.32 EUR
Mindestbestellmenge: 218
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BSO211PHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9204080D26B1CC&compId=BSO211PHXUMA1-dte.pdf?ci_sign=da04bb6283d5de44bff6ec37f2de7d95f13433e2
BSO211PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 1.6W
Technology: OptiMOS™ P
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
190+0.38 EUR
205+0.35 EUR
225+0.32 EUR
237+0.3 EUR
Mindestbestellmenge: 173
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XMC750 WATT MOTOR CONTROL KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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IPB037N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E74A0389411C&compId=IPB037N06N3G-DTE.pdf?ci_sign=1cbda32d942d894f603cf1626a1387244c7938ad
IPB037N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP410N30NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC940FD466611C&compId=IPP410N30N-DTE.pdf?ci_sign=91131cadec2f63016d12e8ee56b378c8247df703
IPP410N30NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 44A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.74 EUR
10+7.29 EUR
11+6.89 EUR
Mindestbestellmenge: 7
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CY7C1354C-166AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXCT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1354C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1356C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1360C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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BSZ040N06LS5ATMA1 Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 69W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 69W
Gate-source voltage: 20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 6.6nC
Kind of channel: enhancement
Electrical mounting: SMT
Polarisation: N
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.62 EUR
Mindestbestellmenge: 5000
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TD500N16KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F074C00DE6469&compId=TD500N16KOF.pdf?ci_sign=a76074aa4c25a809d85ac6baf5ea26212c9adddb
TD500N16KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F09F7C6E98469&compId=TD500N18KOF.pdf?ci_sign=b5a5084591cd6c5813d9dbba92c7a98591c03055
TD500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TT570N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEA028F7668469&compId=TT570N16KOF.pdf?ci_sign=836c3171bb9fd8f725f7e3605bd91df313dc3657
TT570N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N18KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEDB421FFB2469&compId=TZ500N18KOF.pdf?ci_sign=f3bce80d1edaa89ee6344fdd3d38926f29f3b8f8
TZ500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9BDBDF1BC469&compId=TT500N16KOF.pdf?ci_sign=34f28fc7e78abf45d9c7c865df8bb681c3dbe1e0
TT500N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ600N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEE563BB628469&compId=TZ600N16KOF.pdf?ci_sign=771810b9df81adea268ef9a17ac11c2ffb879b45
TZ600N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N14KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9A079D1DE469&compId=TT500N14KOF.pdf?ci_sign=b0aadc52c9d5d3fdf46bc40fc9a88cd19f84b3f5
TT500N14KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CED8FCD3EB6469&compId=TZ500N16KOF.pdf?ci_sign=e342fac28e657edb4f639ad89f6a091993a51e35
TZ500N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFR5410TRRPBF pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831
IRFR5410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR191E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C577575678A469&compId=BCR191.pdf?ci_sign=95bdeac9f9d591f952a3f1e72481882e571b369f
BCR191E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Mounting: SMD
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Kind of transistor: BRT
Frequency: 200MHz
Type of transistor: PNP
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
Mindestbestellmenge: 200
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IRG4PSH71UDPBF description pVersion=0046&contRep=ZT&docId=E221D7D64A4F08F1A303005056AB0C4F&compId=irg4psh71udpbf.pdf?ci_sign=289c39444487fc58635bd7d1764bde616b177c4c
IRG4PSH71UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IR21834STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.1 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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