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IRS2548DSTRPBF IRS2548DSTRPBF INFINEON TECHNOLOGIES IRS2548D-DTE.pdf Category: LED drivers
Description: IC: driver; boost; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: boost
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: SO14
Output current: 0.5A
Number of channels: 1
Integrated circuit features: dead time; PWM
Mounting: SMD
Operating voltage: 10.5...15.6V DC
Produkt ist nicht verfügbar
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IRS25411STRPBF IRS25411STRPBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: SO8
Output current: -700...500mA
Number of channels: 2
Mounting: SMD
Voltage class: 600V
Operating temperature: -25...125°C
Power: 625mW
Supply voltage: 8...16.6V DC
Turn-on time: 320ns
Turn-off time: 180ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF7862TRPBF IRF7862TRPBF INFINEON TECHNOLOGIES irf7862pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF8788TRPBF IRF8788TRPBF INFINEON TECHNOLOGIES irf8788pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDB30E120ATMA1 IDB30E120ATMA1 INFINEON TECHNOLOGIES IDB30E120ATMA1.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Type of diode: rectifying
Case: TO263-3
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
40+1.80 EUR
53+1.37 EUR
55+1.30 EUR
Mindestbestellmenge: 31
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IDB30E60ATMA1 IDB30E60ATMA1 INFINEON TECHNOLOGIES IDB30E60ATMA1.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3
Case: TO263-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
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2EDS8265HXUMA1 2EDS8265HXUMA1 INFINEON TECHNOLOGIES 2EDF7xx5F_K_H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Mounting: SMD
Case: PG-DSO-16
Kind of package: reel; tape
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Supply voltage: 3...3.5V; 4.5...20V
Produkt ist nicht verfügbar
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BSC027N04LSGATMA1 BSC027N04LSGATMA1 INFINEON TECHNOLOGIES BSC027N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSC027N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC027N06LS5-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101596e1c881234d6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS®
Produkt ist nicht verfügbar
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S25FL127SABMFI100 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 108MHz
Kind of package: in-tray
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BSP296L6327 BSP296L6327 INFINEON TECHNOLOGIES BSP296.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
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BSP296NH6327XTSA1 BSP296NH6327XTSA1 INFINEON TECHNOLOGIES BSP296NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
95+0.76 EUR
117+0.61 EUR
163+0.44 EUR
172+0.42 EUR
Mindestbestellmenge: 69
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IPT60R040S7XTMA1 IPT60R040S7XTMA1 INFINEON TECHNOLOGIES Infineon-IPT60R040S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc266ace577b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A
Case: TO220
Mounting: THT
Drain-source voltage: 600V
Drain current: 13A
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Power dissipation: 245W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 207A
Produkt ist nicht verfügbar
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FP20R06W1E3B11BOMA1 FP20R06W1E3B11BOMA1 INFINEON TECHNOLOGIES FP20R06W1E3B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Application: Inverter
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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IRMCK099M IRMCK099M INFINEON TECHNOLOGIES IRMCK099M.pdf Category: Motor and PWM drivers
Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Case: QFN32
Operating voltage: 3...3.6V DC
Frequency: 1...20kHz
Output current: 73.5mA
Type of integrated circuit: driver
Interface: I2C; JTAG; UART
Clock frequency: 100MHz
Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM
Technology: iMOTION™
Kind of integrated circuit: 3-phase motor controller; DMC
Produkt ist nicht verfügbar
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IPA050N10NM5SXKSA1 IPA050N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 INFINEON TECHNOLOGIES BSZ150N10LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IGCM20F60GAXKMA1 INFINEON TECHNOLOGIES IGCM20F60GAXKMA1.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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IGCM10F60GAXKMA1 IGCM10F60GAXKMA1 INFINEON TECHNOLOGIES IGCM10F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
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IRLL2705TRPBF IRLL2705TRPBF INFINEON TECHNOLOGIES irll2705pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1615 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
82+0.87 EUR
159+0.45 EUR
168+0.43 EUR
Mindestbestellmenge: 70
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BSC028N06NSATMA1 BSC028N06NSATMA1 INFINEON TECHNOLOGIES BSC028N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3578 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.80 EUR
31+2.32 EUR
47+1.53 EUR
50+1.44 EUR
500+1.40 EUR
Mindestbestellmenge: 26
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BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES BSS214NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5605 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
264+0.27 EUR
429+0.17 EUR
484+0.15 EUR
832+0.09 EUR
881+0.08 EUR
Mindestbestellmenge: 173
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IPS65R1K5CEAKMA1 IPS65R1K5CEAKMA1 INFINEON TECHNOLOGIES IPS65R1K5CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 28W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
177+0.40 EUR
196+0.37 EUR
220+0.33 EUR
233+0.31 EUR
Mindestbestellmenge: 177
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IPI029N06NAKSA1 IPI029N06NAKSA1 INFINEON TECHNOLOGIES IPI029N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhancement
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BCR08PNH6327 BCR08PNH6327 INFINEON TECHNOLOGIES BCR08PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Base resistor: 2.2kΩ
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
340+0.21 EUR
380+0.19 EUR
430+0.17 EUR
490+0.15 EUR
520+0.14 EUR
Mindestbestellmenge: 340
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BSC072N08NS5ATMA1 BSC072N08NS5ATMA1 INFINEON TECHNOLOGIES BSC072N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB055N03LGATMA1 IPB055N03LGATMA1 INFINEON TECHNOLOGIES IPB055N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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F4150R12KS4BOSA1 INFINEON TECHNOLOGIES F4150R12KS4BOSA1.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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TLE7184FXUMA2 INFINEON TECHNOLOGIES Infineon-TLE7184F-DS-v01_00-en.pdf?folderId=db3a3043156fd5730116144c5d101c30&fileId=db3a30431ed1d7b2011ee035c2f23e81&ack=t Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+4.28 EUR
Mindestbestellmenge: 2000
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TLE7230RAUMA1 INFINEON TECHNOLOGIES Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
800+6.16 EUR
Mindestbestellmenge: 800
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TLE7469GV52AUMA1 INFINEON TECHNOLOGIES Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04 Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.19 EUR
Mindestbestellmenge: 1000
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IRF1010ZSTRLPBF INFINEON TECHNOLOGIES irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.80 EUR
Mindestbestellmenge: 800
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BCR555E6327HTSA1 BCR555E6327HTSA1 INFINEON TECHNOLOGIES bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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BCR555E6433HTMA1 BCR555E6433HTMA1 INFINEON TECHNOLOGIES bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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IPD040N03LF2SATMA1 INFINEON TECHNOLOGIES IPD040N03LF2SATMA1.pdf Category: Transistors - Unclassified
Description: IPD040N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.44 EUR
Mindestbestellmenge: 2000
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ISZ040N03L5ISATMA1 INFINEON TECHNOLOGIES Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.31 EUR
Mindestbestellmenge: 5000
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BSP125H6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.35 EUR
Mindestbestellmenge: 4000
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ESD130B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
Produkt ist nicht verfügbar
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ESD131B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
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IRL7486MTRPBF INFINEON TECHNOLOGIES IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7480MTRPBF INFINEON TECHNOLOGIES irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ065N03LSATMA1 BSZ065N03LSATMA1 INFINEON TECHNOLOGIES BSZ065N03LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FS75R12KE3BOSA1 INFINEON TECHNOLOGIES FS75R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO2-6
Produkt ist nicht verfügbar
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FS75R12KE3BPSA1 INFINEON TECHNOLOGIES Infineon-FS75R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311bfa5380 Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+87.44 EUR
Mindestbestellmenge: 15
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XMC1302Q024X0064ABXUMA1 XMC1302Q024X0064ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 22
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-24
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XMC1404Q048X0064AAXUMA1 XMC1404Q048X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
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XMC1402F064X0064AAXUMA1 XMC1402F064X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Produkt ist nicht verfügbar
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XMC1402Q048X0064AAXUMA1 XMC1402Q048X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Produkt ist nicht verfügbar
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XMC1402Q064X0064AAXUMA1 XMC1402Q064X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Produkt ist nicht verfügbar
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XMC1402Q040X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 35
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Produkt ist nicht verfügbar
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XMC1100T016X0064ABXUMA1 XMC1100T016X0064ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-16
Produkt ist nicht verfügbar
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XMC1100T038X0064ABXUMA1 XMC1100T038X0064ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
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XMC1302Q040X0064ABXUMA1 INFINEON TECHNOLOGIES XMC1300-AB-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Produkt ist nicht verfügbar
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CY8C5287AXI-LP095 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
Type of integrated circuit: ARM microcontroller
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
90+16.04 EUR
Mindestbestellmenge: 90
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PVT412LPBF INFINEON TECHNOLOGIES pvt412.pdf?fileId=5546d462533600a401535684376e296b description Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.39 EUR
100+4.85 EUR
Mindestbestellmenge: 50
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PVT412APBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.74 EUR
Mindestbestellmenge: 50
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PVT412ASPBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.74 EUR
Mindestbestellmenge: 50
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IRS2548DSTRPBF IRS2548D-DTE.pdf
IRS2548DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; boost; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: boost
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: SO14
Output current: 0.5A
Number of channels: 1
Integrated circuit features: dead time; PWM
Mounting: SMD
Operating voltage: 10.5...15.6V DC
Produkt ist nicht verfügbar
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IRS25411STRPBF irs25401pbf.pdf
IRS25411STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: SO8
Output current: -700...500mA
Number of channels: 2
Mounting: SMD
Voltage class: 600V
Operating temperature: -25...125°C
Power: 625mW
Supply voltage: 8...16.6V DC
Turn-on time: 320ns
Turn-off time: 180ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF7862TRPBF irf7862pbf.pdf
IRF7862TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF8788TRPBF irf8788pbf.pdf
IRF8788TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDB30E120ATMA1 IDB30E120ATMA1.pdf
IDB30E120ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Type of diode: rectifying
Case: TO263-3
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
40+1.80 EUR
53+1.37 EUR
55+1.30 EUR
Mindestbestellmenge: 31
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IDB30E60ATMA1 IDB30E60ATMA1.pdf
IDB30E60ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3
Case: TO263-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
Produkt ist nicht verfügbar
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2EDS8265HXUMA1 2EDF7xx5F_K_H.pdf
2EDS8265HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Mounting: SMD
Case: PG-DSO-16
Kind of package: reel; tape
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Supply voltage: 3...3.5V; 4.5...20V
Produkt ist nicht verfügbar
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BSC027N04LSGATMA1 BSC027N04LSG-DTE.pdf
BSC027N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC027N06LS5ATMA1 Infineon-BSC027N06LS5-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101596e1c881234d6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Pulsed drain current: 400A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS®
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S25FL127SABMFI100 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 108MHz
Kind of package: in-tray
Produkt ist nicht verfügbar
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BSP296L6327 BSP296.pdf
BSP296L6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP296NH6327XTSA1 BSP296NH6327XTSA1.pdf
BSP296NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
95+0.76 EUR
117+0.61 EUR
163+0.44 EUR
172+0.42 EUR
Mindestbestellmenge: 69
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IPT60R040S7XTMA1 Infineon-IPT60R040S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc266ace577b2
IPT60R040S7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A
Case: TO220
Mounting: THT
Drain-source voltage: 600V
Drain current: 13A
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Power dissipation: 245W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 207A
Produkt ist nicht verfügbar
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FP20R06W1E3B11BOMA1 FP20R06W1E3B11.pdf
FP20R06W1E3B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Collector current: 20A
Power dissipation: 94W
Case: AG-EASY1B-2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Application: Inverter
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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IRMCK099M IRMCK099M.pdf
IRMCK099M
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; DMC,3-phase motor controller; iMOTION™; QFN32; 73.5mA
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Case: QFN32
Operating voltage: 3...3.6V DC
Frequency: 1...20kHz
Output current: 73.5mA
Type of integrated circuit: driver
Interface: I2C; JTAG; UART
Clock frequency: 100MHz
Integrated circuit features: current monitoring; FOC; internal temperature sensor; MCE; PMSM
Technology: iMOTION™
Kind of integrated circuit: 3-phase motor controller; DMC
Produkt ist nicht verfügbar
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IPA050N10NM5SXKSA1 Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d
IPA050N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 264A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 BSZ150N10LS3G-DTE.pdf
BSZ150N10LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IGCM20F60GAXKMA1 IGCM20F60GAXKMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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IGCM10F60GAXKMA1 IGCM10F60GA.pdf
IGCM10F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRLL2705TRPBF irll2705pbf.pdf
IRLL2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1615 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
82+0.87 EUR
159+0.45 EUR
168+0.43 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
BSC028N06NSATMA1 BSC028N06NS-DTE.pdf
BSC028N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3578 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.80 EUR
31+2.32 EUR
47+1.53 EUR
50+1.44 EUR
500+1.40 EUR
Mindestbestellmenge: 26
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BSS214NH6327XTSA1 BSS214NH6327XTSA1.pdf
BSS214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
264+0.27 EUR
429+0.17 EUR
484+0.15 EUR
832+0.09 EUR
881+0.08 EUR
Mindestbestellmenge: 173
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IPS65R1K5CEAKMA1 IPS65R1K5CE-DTE.pdf
IPS65R1K5CEAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 28W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
177+0.40 EUR
196+0.37 EUR
220+0.33 EUR
233+0.31 EUR
Mindestbestellmenge: 177
Im Einkaufswagen  Stück im Wert von  UAH
IPI029N06NAKSA1 IPI029N06N-DTE.pdf
IPI029N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR08PNH6327 BCR08PNH6327.pdf
BCR08PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Base resistor: 2.2kΩ
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
340+0.21 EUR
380+0.19 EUR
430+0.17 EUR
490+0.15 EUR
520+0.14 EUR
Mindestbestellmenge: 340
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BSC072N08NS5ATMA1 BSC072N08NS5-DTE.pdf
BSC072N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB055N03LGATMA1 IPB055N03LG-DTE.pdf
IPB055N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
F4150R12KS4BOSA1 F4150R12KS4BOSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 76A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7184FXUMA2 Infineon-TLE7184F-DS-v01_00-en.pdf?folderId=db3a3043156fd5730116144c5d101c30&fileId=db3a30431ed1d7b2011ee035c2f23e81&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+4.28 EUR
Mindestbestellmenge: 2000
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TLE7230RAUMA1 Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+6.16 EUR
Mindestbestellmenge: 800
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TLE7469GV52AUMA1 Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.19 EUR
Mindestbestellmenge: 1000
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IRF1010ZSTRLPBF irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.80 EUR
Mindestbestellmenge: 800
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BCR555E6327HTSA1 bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c
BCR555E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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BCR555E6433HTMA1 bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c
BCR555E6433HTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPD040N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.44 EUR
Mindestbestellmenge: 2000
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ISZ040N03L5ISATMA1 Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.31 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSP125H6433XTMA1 Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.35 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
ESD130B1W0201E6327XTSA1 Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
Produkt ist nicht verfügbar
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ESD131B1W0201E6327XTSA1 Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
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IRL7486MTRPBF IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7480MTRPBF irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ065N03LSATMA1 BSZ065N03LS-DTE.pdf
BSZ065N03LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FS75R12KE3BOSA1 FS75R12KE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO2-6
Produkt ist nicht verfügbar
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FS75R12KE3BPSA1 Infineon-FS75R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311bfa5380
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of module: IGBT
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+87.44 EUR
Mindestbestellmenge: 15
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XMC1302Q024X0064ABXUMA1 XMC1300-AB-EN.pdf
XMC1302Q024X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 22
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-24
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XMC1404Q048X0064AAXUMA1 XMC1400-DTE.pdf
XMC1404Q048X0064AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
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XMC1402F064X0064AAXUMA1 XMC1400-DTE.pdf
XMC1402F064X0064AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Produkt ist nicht verfügbar
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XMC1402Q048X0064AAXUMA1 XMC1400-DTE.pdf
XMC1402Q048X0064AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Produkt ist nicht verfügbar
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XMC1402Q064X0064AAXUMA1 XMC1400-DTE.pdf
XMC1402Q064X0064AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Produkt ist nicht verfügbar
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XMC1402Q040X0064AAXUMA1 XMC1400-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 35
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Produkt ist nicht verfügbar
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XMC1100T016X0064ABXUMA1 XMC1300-AB-EN.pdf
XMC1100T016X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-16
Produkt ist nicht verfügbar
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XMC1100T038X0064ABXUMA1 XMC1300-AB-EN.pdf
XMC1100T038X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Produkt ist nicht verfügbar
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XMC1302Q040X0064ABXUMA1 XMC1300-AB-EN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Produkt ist nicht verfügbar
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CY8C5287AXI-LP095 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
Type of integrated circuit: ARM microcontroller
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+16.04 EUR
Mindestbestellmenge: 90
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PVT412LPBF description pvt412.pdf?fileId=5546d462533600a401535684376e296b
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.39 EUR
100+4.85 EUR
Mindestbestellmenge: 50
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PVT412APBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.74 EUR
Mindestbestellmenge: 50
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PVT412ASPBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.74 EUR
Mindestbestellmenge: 50
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