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S25FL512SDSMFB013 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 80MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
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S25FS512SAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
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S25FS512SDSNFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 80MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
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S28HL512TFPBHB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Case: BGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 166MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
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S28HS512TGABHB013 INFINEON TECHNOLOGIES S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Case: BGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 200MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
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S29GL128S10DHB013 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 100ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 128Mb FLASH
Mounting: SMD
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S70GL02GS11FHB013 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
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BTS50080-1TMA BTS50080-1TMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869886717E39A469&compId=BTS50080-1TMA.pdf?ci_sign=8cbe647494b17e75a46beef59340490bf8400257 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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IPA60R180P7XKSA1 IPA60R180P7XKSA1 INFINEON TECHNOLOGIES IPA60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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TLD1120ELXUMA1 TLD1120ELXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CD141BFF73C93D1&compId=TLD1120EL.pdf?ci_sign=96300b4bd44c785763f84797c1c0de64acd9edfd Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
auf Bestellung 2411 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
81+0.89 EUR
94+0.76 EUR
100+0.72 EUR
102+0.71 EUR
250+0.69 EUR
Mindestbestellmenge: 59
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BTS723GW BTS723GW INFINEON TECHNOLOGIES BTS723GW.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...4.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 53mΩ
Supply voltage: 7...58V DC
Technology: Classic PROFET
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.41 EUR
14+5.32 EUR
15+5.03 EUR
Mindestbestellmenge: 8
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IRS4427PBF IRS4427PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA864536E4D93D7&compId=IRS4427PBF.pdf?ci_sign=18bc1ab6bdaf203e717df27cfa52960c5ee10db1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
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IRFH5301TRPBF IRFH5301TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B71727F19FF1A303005056AB0C4F&compId=irfh5301pbf.pdf?ci_sign=69f6e6f9e392415bb914073c39b2b8b923255e3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFR4510TRPBF INFINEON TECHNOLOGIES irfr4510pbf.pdf?fileId=5546d462533600a40153563228bc20f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 143W
Polarisation: unipolar
Case: DPAK
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 252A
Drain current: 45A
On-state resistance: 13.9mΩ
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FZ600R12KE3HOSA1 FZ600R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B429DD0D2FC469&compId=FZ600R12KE3.pdf?ci_sign=868834a23490657b7f01821c752b76da3c7c6933 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: AG-62MM
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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FZ400R12KS4HOSA1 INFINEON TECHNOLOGIES FZ400R12KS4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Produkt ist nicht verfügbar
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FF450R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5 Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 1.2kV; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM
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FF450R12KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF791B428A7DE27&compId=FF450R12KE4-DTE.pdf?ci_sign=ea990a008d4cd0a41ce5a30a9a09bff4050731f0 Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 1.2kV; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM
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FZ900R12KE4HOSA1 INFINEON TECHNOLOGIES FZ900R12KE4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Produkt ist nicht verfügbar
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DF400R12KE3HOSA1 DF400R12KE3HOSA1 INFINEON TECHNOLOGIES DF400R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
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FF200R12KE3HOSA1 FF200R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FD6BFDD0F906745&compId=FF200R12KE3.pdf?ci_sign=f153117c762ff8f8b62ebc993737473163b2a468 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
auf Bestellung 10 Stücke:
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1+158.02 EUR
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TT260N22KOFHOSA1 TT260N22KOFHOSA1 INFINEON TECHNOLOGIES TT260N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 INFINEON TECHNOLOGIES FF200R12KT3E.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Produkt ist nicht verfügbar
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FF300R12KT3EHOSA1 FF300R12KT3EHOSA1 INFINEON TECHNOLOGIES FF300R12KT3E.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Produkt ist nicht verfügbar
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FF200R12KE4PHOSA1 FF200R12KE4PHOSA1 INFINEON TECHNOLOGIES FF200R12KE4P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
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FP100R12KT4B11BOSA1 INFINEON TECHNOLOGIES Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IRF6215STRLPBF IRF6215STRLPBF INFINEON TECHNOLOGIES irf6215spbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS134D BTS134D INFINEON TECHNOLOGIES BTS134D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
28+2.59 EUR
44+1.66 EUR
46+1.56 EUR
1000+1.50 EUR
Mindestbestellmenge: 19
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BTS724G BTS724G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBC9E5A998E90469&compId=BTS724G.pdf?ci_sign=fdbdc60cc29109e80227e1510eebe17cccc6aecd Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Output current: 3.3...7.3A
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 22.5mΩ
Number of channels: 4
Kind of output: N-Channel
Technology: Classic PROFET
auf Bestellung 988 Stücke:
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9+8.32 EUR
17+4.28 EUR
18+4.03 EUR
Mindestbestellmenge: 9
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BSC014N04LSIATMA1 BSC014N04LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25D852524411C&compId=BSC014N04LSI-DTE.pdf?ci_sign=53868b51fbb5ec3ed88489a6d0c056d375046e73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ034N04LSATMA1 BSZ034N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DFBAB1A7CC11C&compId=BSZ034N04LS-DTE.pdf?ci_sign=f949cc7fd22e98717d29d2031c01c57f8fe57307 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES AUIRGx4062D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Pulsed collector current: 72A
Collector current: 39A
Collector-emitter voltage: 600V
Power dissipation: 123W
Gate charge: 77nC
Technology: Trench
Gate-emitter voltage: ±20V
Turn-on time: 35ns
Turn-off time: 176ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
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IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES irgs4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Collector current: 48A
Collector-emitter voltage: 600V
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
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IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES irf6216pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Produkt ist nicht verfügbar
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BCX6925H6327XTSA1 BCX6925H6327XTSA1 INFINEON TECHNOLOGIES BCX69.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 3W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 7 Stücke:
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IPB60R180C7ATMA1 IPB60R180C7ATMA1 INFINEON TECHNOLOGIES IPB60R180C7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
auf Bestellung 950 Stücke:
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37+1.97 EUR
39+1.86 EUR
500+1.79 EUR
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IDW100E60FKSA1 IDW100E60FKSA1 INFINEON TECHNOLOGIES IDW100E60FKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 31 Stücke:
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14+5.45 EUR
29+2.52 EUR
31+2.37 EUR
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XMC DIGITAL POWER EXPLORER KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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IRFSL7430PBF IRFSL7430PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF23C0F0390143&compId=IRFSL7430PBF.pdf?ci_sign=7f386f176a2cb5c5d006cc4f9534444664bf3296 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 301A
Power dissipation: 375W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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BCR141E6327 BCR141E6327 INFINEON TECHNOLOGIES BCR141.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 5140 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
228+0.31 EUR
371+0.19 EUR
439+0.16 EUR
637+0.11 EUR
1389+0.05 EUR
1471+0.05 EUR
Mindestbestellmenge: 167
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IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC73EFFD0DC11C&compId=IPP048N12N3G-DTE.pdf?ci_sign=ffecbc2563f0f7e1ca375968b8dceaabdd38fe7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 103 Stücke:
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13+5.88 EUR
27+2.67 EUR
29+2.53 EUR
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BSC054N04NSGATMA1 BSC054N04NSGATMA1 INFINEON TECHNOLOGIES BSC054N04NSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSB014N04LX3GXUMA1 BSB014N04LX3GXUMA1 INFINEON TECHNOLOGIES BSB014N04LX3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSC014N04LSATMA1 BSC014N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25A9939DDA11C&compId=BSC014N04LS-DTE.pdf?ci_sign=702ca4986b6c1f5e5d8f755d7d5c4d74798c8fd0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLTS6342TRPBF IRLTS6342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22282476BD4DAF1A303005056AB0C4F&compId=irlts6342pbf.pdf?ci_sign=e247a54c761d43482cdc3c03bb2b306196ea7d84 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.3A
auf Bestellung 688 Stücke:
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112+0.64 EUR
162+0.44 EUR
194+0.37 EUR
224+0.32 EUR
253+0.28 EUR
268+0.27 EUR
275+0.26 EUR
Mindestbestellmenge: 112
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DDB6U205N16LHOSA1 DDB6U205N16LHOSA1 INFINEON TECHNOLOGIES DDB6U205N16LHOSA1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M5 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.47V
Load current: 205A
Max. forward impulse current: 1.375kA
auf Bestellung 2 Stücke:
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1+278.85 EUR
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ITS4141NHUMA1 ITS4141NHUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6DF8054C3B5EA&compId=ITS4141N.pdf?ci_sign=e124ff2bc030b4d051faaf0434cbcb829927b7f4 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-on time: 150µs
Turn-off time: 0.1ms
auf Bestellung 3080 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
49+1.47 EUR
54+1.34 EUR
57+1.27 EUR
250+1.23 EUR
500+1.22 EUR
Mindestbestellmenge: 33
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SPD15P10PLGBTMA1 SPD15P10PLGBTMA1 INFINEON TECHNOLOGIES SPD15P10PLGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2194 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
41+1.77 EUR
50+1.43 EUR
54+1.34 EUR
250+1.30 EUR
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SPD09P06PLGBTMA1 SPD09P06PLGBTMA1 INFINEON TECHNOLOGIES SPD09P06PLGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS3405G BTS3405G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E076C4E98469&compId=BTS3405G.pdf?ci_sign=8f9574202640d62b6b0b3043218a9c425ff98c55 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Output voltage: 10V
Output current: 0.35A
Case: PG-DSO-8-25
Mounting: SMD
Number of channels: 2
Technology: HITFET®
Kind of integrated circuit: low-side
On-state resistance: 0.35Ω
Kind of output: N-Channel
auf Bestellung 2209 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
39+1.87 EUR
47+1.54 EUR
49+1.47 EUR
100+1.42 EUR
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IRL2910STRLPBF IRL2910STRLPBF INFINEON TECHNOLOGIES irl2910spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Produkt ist nicht verfügbar
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BAT1704E6327HTSA1 BAT1704E6327HTSA1 INFINEON TECHNOLOGIES BAT1704E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
auf Bestellung 2126 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
300+0.24 EUR
472+0.15 EUR
589+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 228
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XMC4108Q48K64ABXUMA1 XMC4108Q48K64ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-VQFN-48
Operating temperature: -40...125°C
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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BCM856SH6327 BCM856SH6327 INFINEON TECHNOLOGIES BCM856SH6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1835 Stücke:
Lieferzeit 14-21 Tag (e)
285+0.25 EUR
405+0.18 EUR
500+0.14 EUR
540+0.13 EUR
585+0.12 EUR
Mindestbestellmenge: 285
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BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928D6EDF37B1CC&compId=BSS83PH6327XTSA1-dte.pdf?ci_sign=af6b6a3bc6b9093bad4b1410edb90e4f35d69241 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 5540 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
247+0.29 EUR
317+0.23 EUR
385+0.19 EUR
468+0.15 EUR
834+0.09 EUR
878+0.08 EUR
Mindestbestellmenge: 148
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IMW120R350M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW120R350M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe1a0a66a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 4.7A
Pulsed drain current: 13A
Power dissipation: 30W
Case: TO247
Gate-source voltage: -7...23V
On-state resistance: 662mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ105N04NSGATMA1 BSZ105N04NSGATMA1 INFINEON TECHNOLOGIES BSZ105N04NSG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
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BCR112E6327HTSA1
+1
 		BCR112E6327HTSA1 INFINEON TECHNOLOGIES bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 140MHz
Case: SOT23
Mounting: SMD
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Collector-emitter voltage: 50V
auf Bestellung 6603 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
447+0.16 EUR
680+0.11 EUR
920+0.08 EUR
1441+0.05 EUR
1454+0.05 EUR
1539+0.05 EUR
3000+0.05 EUR
Mindestbestellmenge: 250
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BCR148E6327 BCR148E6327 INFINEON TECHNOLOGIES BCR148.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 100MHz
auf Bestellung 7265 Stücke:
Lieferzeit 14-21 Tag (e)
731+0.10 EUR
812+0.09 EUR
1058+0.07 EUR
1060+0.07 EUR
1122+0.06 EUR
3000+0.06 EUR
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BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES BCR185.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 200MHz
auf Bestellung 4850 Stücke:
Lieferzeit 14-21 Tag (e)
913+0.08 EUR
1017+0.07 EUR
1150+0.06 EUR
1327+0.05 EUR
1401+0.05 EUR
3000+0.05 EUR
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S25FL512SDSMFB013 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 80MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
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S25FS512SAGMFB013 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FS512SDSNFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 80MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S28HL512TFPBHB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Case: BGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 166MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S28HS512TGABHB013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Case: BGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 200MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S29GL128S10DHB013
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 100ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 128Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S70GL02GS11FHB013 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS50080-1TMA pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869886717E39A469&compId=BTS50080-1TMA.pdf?ci_sign=8cbe647494b17e75a46beef59340490bf8400257
BTS50080-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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IPA60R180P7XKSA1 IPA60R180P7.pdf
IPA60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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TLD1120ELXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CD141BFF73C93D1&compId=TLD1120EL.pdf?ci_sign=96300b4bd44c785763f84797c1c0de64acd9edfd
TLD1120ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
auf Bestellung 2411 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
81+0.89 EUR
94+0.76 EUR
100+0.72 EUR
102+0.71 EUR
250+0.69 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
BTS723GW BTS723GW.pdf
BTS723GW
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...4.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 53mΩ
Supply voltage: 7...58V DC
Technology: Classic PROFET
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.41 EUR
14+5.32 EUR
15+5.03 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRS4427PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA864536E4D93D7&compId=IRS4427PBF.pdf?ci_sign=18bc1ab6bdaf203e717df27cfa52960c5ee10db1
IRS4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5301TRPBF pVersion=0046&contRep=ZT&docId=E221B71727F19FF1A303005056AB0C4F&compId=irfh5301pbf.pdf?ci_sign=69f6e6f9e392415bb914073c39b2b8b923255e3a
IRFH5301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFR4510TRPBF irfr4510pbf.pdf?fileId=5546d462533600a40153563228bc20f1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 143W
Polarisation: unipolar
Case: DPAK
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 252A
Drain current: 45A
On-state resistance: 13.9mΩ
Produkt ist nicht verfügbar
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FZ600R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B429DD0D2FC469&compId=FZ600R12KE3.pdf?ci_sign=868834a23490657b7f01821c752b76da3c7c6933
FZ600R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: AG-62MM
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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FZ400R12KS4HOSA1 FZ400R12KS4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF450R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 1.2kV; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM
Produkt ist nicht verfügbar
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FF450R12KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF791B428A7DE27&compId=FF450R12KE4-DTE.pdf?ci_sign=ea990a008d4cd0a41ce5a30a9a09bff4050731f0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor/transistor; IGBT half-bridge; Urmax: 1.2kV; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM
Produkt ist nicht verfügbar
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FZ900R12KE4HOSA1 FZ900R12KE4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Produkt ist nicht verfügbar
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DF400R12KE3HOSA1 DF400R12KE3.pdf
DF400R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FD6BFDD0F906745&compId=FF200R12KE3.pdf?ci_sign=f153117c762ff8f8b62ebc993737473163b2a468
FF200R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: AG-62MM-1
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+158.02 EUR
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TT260N22KOFHOSA1 TT260N22KOF.pdf
TT260N22KOFHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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FF200R12KT3EHOSA1 FF200R12KT3E.pdf
FF200R12KT3EHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Produkt ist nicht verfügbar
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FF300R12KT3EHOSA1 FF300R12KT3E.pdf
FF300R12KT3EHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Produkt ist nicht verfügbar
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FF200R12KE4PHOSA1 FF200R12KE4P.pdf
FF200R12KE4PHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
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FP100R12KT4B11BOSA1 Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IRF6215STRLPBF irf6215spbf.pdf
IRF6215STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS134D BTS134D.pdf
BTS134D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
28+2.59 EUR
44+1.66 EUR
46+1.56 EUR
1000+1.50 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BTS724G pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBC9E5A998E90469&compId=BTS724G.pdf?ci_sign=fdbdc60cc29109e80227e1510eebe17cccc6aecd
BTS724G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Output current: 3.3...7.3A
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 22.5mΩ
Number of channels: 4
Kind of output: N-Channel
Technology: Classic PROFET
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.32 EUR
17+4.28 EUR
18+4.03 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N04LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25D852524411C&compId=BSC014N04LSI-DTE.pdf?ci_sign=53868b51fbb5ec3ed88489a6d0c056d375046e73
BSC014N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ034N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DFBAB1A7CC11C&compId=BSZ034N04LS-DTE.pdf?ci_sign=f949cc7fd22e98717d29d2031c01c57f8fe57307
BSZ034N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRGSL4062D1 AUIRGx4062D1.pdf
AUIRGSL4062D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Pulsed collector current: 72A
Collector current: 39A
Collector-emitter voltage: 600V
Power dissipation: 123W
Gate charge: 77nC
Technology: Trench
Gate-emitter voltage: ±20V
Turn-on time: 35ns
Turn-off time: 176ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRGSL4062DPBF irgs4062dpbf.pdf
IRGSL4062DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Collector current: 48A
Collector-emitter voltage: 600V
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRF6216TRPBF irf6216pbf.pdf
IRF6216TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Drain-source voltage: -150V
Drain current: -2.2A
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Produkt ist nicht verfügbar
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BCX6925H6327XTSA1 BCX69.pdf
BCX6925H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 3W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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IPB60R180C7ATMA1 IPB60R180C7.pdf
IPB60R180C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
37+1.97 EUR
39+1.86 EUR
500+1.79 EUR
Mindestbestellmenge: 23
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IDW100E60FKSA1 IDW100E60FKSA1.pdf
IDW100E60FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
29+2.52 EUR
31+2.37 EUR
Mindestbestellmenge: 14
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XMC DIGITAL POWER EXPLORER KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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IRFSL7430PBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF23C0F0390143&compId=IRFSL7430PBF.pdf?ci_sign=7f386f176a2cb5c5d006cc4f9534444664bf3296
IRFSL7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 301A
Power dissipation: 375W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BCR141E6327 BCR141.pdf
BCR141E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 5140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
228+0.31 EUR
371+0.19 EUR
439+0.16 EUR
637+0.11 EUR
1389+0.05 EUR
1471+0.05 EUR
Mindestbestellmenge: 167
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IPP048N12N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC73EFFD0DC11C&compId=IPP048N12N3G-DTE.pdf?ci_sign=ffecbc2563f0f7e1ca375968b8dceaabdd38fe7b
IPP048N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.88 EUR
27+2.67 EUR
29+2.53 EUR
Mindestbestellmenge: 13
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BSC054N04NSGATMA1 BSC054N04NSG-DTE.pdf
BSC054N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSB014N04LX3GXUMA1 BSB014N04LX3G-DTE.pdf
BSB014N04LX3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSC014N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25A9939DDA11C&compId=BSC014N04LS-DTE.pdf?ci_sign=702ca4986b6c1f5e5d8f755d7d5c4d74798c8fd0
BSC014N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLTS6342TRPBF pVersion=0046&contRep=ZT&docId=E22282476BD4DAF1A303005056AB0C4F&compId=irlts6342pbf.pdf?ci_sign=e247a54c761d43482cdc3c03bb2b306196ea7d84
IRLTS6342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.3A
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
162+0.44 EUR
194+0.37 EUR
224+0.32 EUR
253+0.28 EUR
268+0.27 EUR
275+0.26 EUR
Mindestbestellmenge: 112
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DDB6U205N16LHOSA1 DDB6U205N16LHOSA1.pdf
DDB6U205N16LHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M5 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.47V
Load current: 205A
Max. forward impulse current: 1.375kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+278.85 EUR
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ITS4141NHUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6DF8054C3B5EA&compId=ITS4141N.pdf?ci_sign=e124ff2bc030b4d051faaf0434cbcb829927b7f4
ITS4141NHUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-on time: 150µs
Turn-off time: 0.1ms
auf Bestellung 3080 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
49+1.47 EUR
54+1.34 EUR
57+1.27 EUR
250+1.23 EUR
500+1.22 EUR
Mindestbestellmenge: 33
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SPD15P10PLGBTMA1 SPD15P10PLGBTMA1-DTE.pdf
SPD15P10PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
41+1.77 EUR
50+1.43 EUR
54+1.34 EUR
250+1.30 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SPD09P06PLGBTMA1 SPD09P06PLGBTMA1-DTE.pdf
SPD09P06PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3405G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E076C4E98469&compId=BTS3405G.pdf?ci_sign=8f9574202640d62b6b0b3043218a9c425ff98c55
BTS3405G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Output voltage: 10V
Output current: 0.35A
Case: PG-DSO-8-25
Mounting: SMD
Number of channels: 2
Technology: HITFET®
Kind of integrated circuit: low-side
On-state resistance: 0.35Ω
Kind of output: N-Channel
auf Bestellung 2209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
39+1.87 EUR
47+1.54 EUR
49+1.47 EUR
100+1.42 EUR
Mindestbestellmenge: 25
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IRL2910STRLPBF irl2910spbf.pdf
IRL2910STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Produkt ist nicht verfügbar
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BAT1704E6327HTSA1 BAT1704E6327HTSA1.pdf
BAT1704E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
auf Bestellung 2126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
300+0.24 EUR
472+0.15 EUR
589+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 228
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XMC4108Q48K64ABXUMA1 XMC4100-4200-DTE.pdf
XMC4108Q48K64ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Case: PG-VQFN-48
Operating temperature: -40...125°C
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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BCM856SH6327 BCM856SH6327.pdf
BCM856SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1835 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
285+0.25 EUR
405+0.18 EUR
500+0.14 EUR
540+0.13 EUR
585+0.12 EUR
Mindestbestellmenge: 285
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BSS83PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928D6EDF37B1CC&compId=BSS83PH6327XTSA1-dte.pdf?ci_sign=af6b6a3bc6b9093bad4b1410edb90e4f35d69241
BSS83PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 5540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
247+0.29 EUR
317+0.23 EUR
385+0.19 EUR
468+0.15 EUR
834+0.09 EUR
878+0.08 EUR
Mindestbestellmenge: 148
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IMW120R350M1HXKSA1 Infineon-IMW120R350M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe1a0a66a3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 4.7A
Pulsed drain current: 13A
Power dissipation: 30W
Case: TO247
Gate-source voltage: -7...23V
On-state resistance: 662mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ105N04NSGATMA1 BSZ105N04NSG.pdf
BSZ105N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
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BCR112E6327HTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
BCR112E6327HTSA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Frequency: 140MHz
Case: SOT23
Mounting: SMD
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Collector-emitter voltage: 50V
auf Bestellung 6603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
447+0.16 EUR
680+0.11 EUR
920+0.08 EUR
1441+0.05 EUR
1454+0.05 EUR
1539+0.05 EUR
3000+0.05 EUR
Mindestbestellmenge: 250
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BCR148E6327 BCR148.pdf
BCR148E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 100MHz
auf Bestellung 7265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
731+0.10 EUR
812+0.09 EUR
1058+0.07 EUR
1060+0.07 EUR
1122+0.06 EUR
3000+0.06 EUR
Mindestbestellmenge: 731
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BCR185E6327 BCR185.pdf
BCR185E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 200MHz
auf Bestellung 4850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
913+0.08 EUR
1017+0.07 EUR
1150+0.06 EUR
1327+0.05 EUR
1401+0.05 EUR
3000+0.05 EUR
Mindestbestellmenge: 913
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