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IRF7341TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2507 Stücke:
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50+1.44 EUR
78+0.93 EUR
114+0.63 EUR
250+0.55 EUR
500+0.49 EUR
1000+0.45 EUR
2000+0.4 EUR
Mindestbestellmenge: 50
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AUIRFN8405TR INFINEON TECHNOLOGIES auirfn8405.pdf?fileId=5546d462533600a4015355b179cb1440 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 95A; PQFN5X6; automotive industry; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 95A
Case: PQFN5X6
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 117nC
Kind of channel: enhancement
Technology: HEXFET®
Electrical mounting: SMT
Application: automotive industry
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4000+0.53 EUR
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IRF3007STRLPBF INFINEON TECHNOLOGIES irf3007spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 62A
Mounting: SMD
Produkt ist nicht verfügbar
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IRFR6215TRLPBF INFINEON TECHNOLOGIES irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY8CMBR3106S-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Unclassified
Description: CY8CMBR3106S-LQXI
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IPB034N06N3GATMA2 INFINEON TECHNOLOGIES Infineon-IPB034N06N3%20G-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f56e2d130d41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 100A; 167W; TO263-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
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SPD08N50C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Category: Transistors - Unclassified
Description: SPD08N50C3ATMA1
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2500+0.8 EUR
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PVT422S-TPBF INFINEON TECHNOLOGIES pvt422.pdf?fileId=5546d462533600a401535684473f2973 Category: One Phase Solid State Relays
Description: Relay: solid state; 25mA; SMT; SMD8; Leads: Gull Wing; 4kV; -40÷85°C
Type of relay: solid state
Control current max.: 25mA
Mounting: SMT
Case: SMD8
Leads: Gull Wing
Insulation voltage: 4kV
Operating temperature: -40...85°C
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750+7.98 EUR
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IR2181STRPBF INFINEON TECHNOLOGIES ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.8A; Ch: 2; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.8A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
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2500+1.89 EUR
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SPA11N80C3XKSA2 INFINEON TECHNOLOGIES SPP_A11N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385b2fcc00ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 11A; 34W; TO220-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 85nC
auf Bestellung 92 Stücke:
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IRFP4110PBFXKMA1 IRFP4110PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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22+3.27 EUR
27+2.72 EUR
100+2.06 EUR
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IPP60R180C7XKSA1 IPP60R180C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A594EE1111BF&compId=IPP60R180C7-DTE.pdf?ci_sign=44faf0fccfdedd2c114610049948296d029df2e1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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24+3.09 EUR
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IPW60R180P7XKSA1 IPW60R180P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBE97122B28143&compId=IPW60R180P7.pdf?ci_sign=8c6446c121bdf566d55c0a9926608d4dd0617f73 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IPP60R180P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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BAR6302LE6327XTMA1 INFINEON TECHNOLOGIES INFNS15694-1.pdf?t.download=true&u=5oefqw Category: Unclassified
Description: BAR6302LE6327XTMA1
auf Bestellung 15000 Stücke:
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15000+0.082 EUR
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BAR6305WH6327XTSA1 INFINEON TECHNOLOGIES INFNS15694-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
auf Bestellung 9000 Stücke:
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3000+0.09 EUR
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BAR6306WH6327XTSA1 INFINEON TECHNOLOGIES INFNS15694-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
auf Bestellung 12000 Stücke:
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3000+0.094 EUR
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BAR6404WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAR64-04W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0263783902 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC70,SOT323; Ufmax: 1.1V; 250mW
Semiconductor structure: single diode
Case: SC70; SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
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BAR6406E6327HTSA1 INFINEON TECHNOLOGIES Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC59; 250mW
Semiconductor structure: common anode
Case: SC59
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 9000 Stücke:
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3000+0.056 EUR
Mindestbestellmenge: 3000
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ICE3AR10080JZXKLA1 INFINEON TECHNOLOGIES Infineon-ICE3AR10080JZ-DS-v02_02-en.pdf?fileId=db3a3043324cae8c01326fade0414605 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; DIP8; flyback; 85÷265VAC; Ubr: 800V; Usup: 10.5÷27V
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 85...265V AC
Breakdown voltage: 800V
Supply voltage: 10.5...27V
auf Bestellung 420 Stücke:
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50+1.6 EUR
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CY8C6144LQI-S4F82 INFINEON TECHNOLOGIES Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906 Category: Integrated circuits - Unclassified
Description: CY8C6144LQI-S4F82
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260+4.83 EUR
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IRFP3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRF150P221AKMA1 INFINEON TECHNOLOGIES Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 186A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2183STRPBF INFINEON TECHNOLOGIES ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
auf Bestellung 7500 Stücke:
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2500+1.89 EUR
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IRS2113STRPBF INFINEON TECHNOLOGIES irs2110.pdf?fileId=5546d462533600a40153567660ff27b0 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC16; 2.5A; Ch: 2; MOSFET
Operating temperature: -40...125°C
Number of channels: 2
Supply voltage: 10...20V
Input voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Mounting: SMD
Case: SOIC16
Output current: 2.5A
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FP15R12W1T4_B3 FP15R12W1T4_B3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFB03D87438E8A15&compId=FP15R12W1T4B3.pdf?ci_sign=87de13b40d54fef0761dd0ea90a3bd47bf610608 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Power dissipation: 130W
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3+44.02 EUR
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IPB160N04S4H1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 160A; 167W; TO263-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate-source voltage: 20V
Application: automotive industry
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1000+1.54 EUR
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IRF7490TRPBF INFINEON TECHNOLOGIES irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
Polarisation: unipolar
Drain current: 5.4A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IR2156STRPBF INFINEON TECHNOLOGIES ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
Supply voltage: 10.5...16.5V
auf Bestellung 2500 Stücke:
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2500+1.63 EUR
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IRF7313TRPBFXTMA1 INFINEON TECHNOLOGIES irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRFI4212H-117PXKMA1 INFINEON TECHNOLOGIES irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Power dissipation: 7W
Case: TO220-5
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Features of semiconductor devices: Half-Bridge Power MOSFET
auf Bestellung 100 Stücke:
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47+1.54 EUR
56+1.29 EUR
63+1.14 EUR
68+1.06 EUR
100+1.04 EUR
Mindestbestellmenge: 47
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IPP120N20NFDAKSA1 IPP120N20NFDAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC912B6685611C&compId=IPP120N20NFD-DTE.pdf?ci_sign=5d8d5dc96917148dec9e37cbde86228c5d8b765b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Drain current: 84A
Power dissipation: 300W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 18 Stücke:
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11+6.99 EUR
14+5.33 EUR
Mindestbestellmenge: 11
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IPA040N06NXKSA1 IPA040N06NXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9A76E68AEC11C&compId=IPA040N06N-DTE.pdf?ci_sign=1c3cfe6adaab2643d43a54e61f8a24ea06fa857c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPP040N06NAKSA1 IPP040N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99844487E211C&compId=IPP040N06NAKSA1-DTE.pdf?ci_sign=67b0feee2a82cae98c5fb9bd1e9ad1a2ae08adee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPA040N06NM5SXKSA1 IPA040N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 51A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 288A
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IAUZ40N06S5L050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of channel: enhancement
Pulsed drain current: 252A
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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IAUZ40N06S5N050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of channel: enhancement
Pulsed drain current: 241A
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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IAUZ40N06S5N105ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 42W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of channel: enhancement
Pulsed drain current: 120A
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPD640N06LGBTMA1 INFINEON TECHNOLOGIES IPD640N06L%2BG%2BRev1.4.pdf?fileId=db3a30431f848401011fcafb4ac00440&folderId=db3a30431ddc9372011ebafa04517f8b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 72A
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF7413ZTRPBFXTMA1 INFINEON TECHNOLOGIES irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISP16DP10LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.53 EUR
Mindestbestellmenge: 1000
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IR21084STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 2500 Stücke:
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2500+1.32 EUR
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IPF016N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 274A; 300W; D2PAK-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 274A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 800 Stücke:
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800+3.37 EUR
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IRF8734TRPBF IRF8734TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE68DFF128F1A303005056AB0C4F&compId=irf8734pbf.pdf?ci_sign=d66a79d1ccd4cf24541e0d32ca4477ec60165a7c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3034 Stücke:
Lieferzeit 14-21 Tag (e)
79+0.92 EUR
103+0.69 EUR
117+0.61 EUR
128+0.56 EUR
139+0.52 EUR
250+0.46 EUR
500+0.44 EUR
Mindestbestellmenge: 79
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BAS7004E6327HTSA1 BAS7004E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
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239+0.3 EUR
292+0.24 EUR
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BSS169H6906XTSA1 INFINEON TECHNOLOGIES INFNS19228-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 170mA; 360mW; SOT23; SMT
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Electrical mounting: SMT
Gate charge: 2.8nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 2.9Ω
Gate-source voltage: 20V
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.32 EUR
Mindestbestellmenge: 3000
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TC299TX128F300NBCKXUMA1 INFINEON TECHNOLOGIES Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Category: Infineon Technologies microcontrollers
Description: Core: 32-bit
Mounting: SMD
Kind of core: 32-bit
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
500+82.78 EUR
Mindestbestellmenge: 500
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IRS2153DSTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Produkt ist nicht verfügbar
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IRS2109STRPBF INFINEON TECHNOLOGIES IRSDS11365-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.8 EUR
Mindestbestellmenge: 2500
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IPB19DP10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; D2PAK,TO263
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 100V
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.85 EUR
Mindestbestellmenge: 1000
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BSC100N10NSFGATMA1 INFINEON TECHNOLOGIES BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.99 EUR
Mindestbestellmenge: 5000
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IRFB7730PBF IRFB7730PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5A09C3C68469&compId=IRFB7730PBF.pdf?ci_sign=f1135565e8d5008d31f5ebd82a3d3e627ae7a3bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
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36+2.02 EUR
40+1.82 EUR
Mindestbestellmenge: 36
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IRFS7730TRL7PP INFINEON TECHNOLOGIES infineon-irfs7730-7p-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 269A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2304STRPBF INFINEON TECHNOLOGIES ir2304.pdf?fileId=5546d462533600a4015355c9954a16e0 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Supply voltage: 10...20V
Input voltage: 10...20V
Output current: 0.13A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
auf Bestellung 92500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.7 EUR
Mindestbestellmenge: 2500
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IRFB4310ZPBFXKMA1 INFINEON TECHNOLOGIES infineon-irfs4310z-datasheet-en.pdf?fileId=5546d462533600a4015356161b4d1e2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5180-2EKA BTS5180-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698775F8CE50469&compId=BTS5180-2EKA.pdf?ci_sign=dcbfa526d3bc10e800b4f1d73c4a0cc27042a66a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Technology: PROFET™+ 12V
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 1.5A
On-state resistance: 0.33Ω
Number of channels: 2
Supply voltage: 8...18V DC
Kind of integrated circuit: high-side
Case: SO14
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
72+1 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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IRF3805STRLPBF INFINEON TECHNOLOGIES irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF3709ZSTRRPBF INFINEON TECHNOLOGIES irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 87A; 79W; D2PAK; SMT
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 17nC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.02 EUR
Mindestbestellmenge: 800
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IR2010STRPBF IR2010STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -3...3A
Number of channels: 2
Mounting: SMD
Case: SO16
Kind of package: reel; tape
Supply voltage: 10...20V DC
Voltage class: 200V
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.25W
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.46 EUR
27+2.69 EUR
Mindestbestellmenge: 21
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IR2010SPBF IR2010SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Case: SO16
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 200V
Kind of package: tube
Produkt ist nicht verfügbar
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IRF7341TRPBFXTMA1 infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2507 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
78+0.93 EUR
114+0.63 EUR
250+0.55 EUR
500+0.49 EUR
1000+0.45 EUR
2000+0.4 EUR
Mindestbestellmenge: 50
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AUIRFN8405TR auirfn8405.pdf?fileId=5546d462533600a4015355b179cb1440
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 95A; PQFN5X6; automotive industry; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 95A
Case: PQFN5X6
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 117nC
Kind of channel: enhancement
Technology: HEXFET®
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.53 EUR
Mindestbestellmenge: 4000
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IRF3007STRLPBF irf3007spbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 62A
Mounting: SMD
Produkt ist nicht verfügbar
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IRFR6215TRLPBF irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY8CMBR3106S-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+1.87 EUR
Mindestbestellmenge: 490
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IPB034N06N3GATMA2 Infineon-IPB034N06N3%20G-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f56e2d130d41
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 100A; 167W; TO263-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.79 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
SPD08N50C3ATMA1 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: SPD08N50C3ATMA1
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.8 EUR
Mindestbestellmenge: 2500
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PVT422S-TPBF pvt422.pdf?fileId=5546d462533600a401535684473f2973
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; 25mA; SMT; SMD8; Leads: Gull Wing; 4kV; -40÷85°C
Type of relay: solid state
Control current max.: 25mA
Mounting: SMT
Case: SMD8
Leads: Gull Wing
Insulation voltage: 4kV
Operating temperature: -40...85°C
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
750+7.98 EUR
Mindestbestellmenge: 750
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IR2181STRPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.8A; Ch: 2; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.8A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.89 EUR
Mindestbestellmenge: 2500
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SPA11N80C3XKSA2 SPP_A11N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385b2fcc00ec
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 11A; 34W; TO220-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 85nC
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.54 EUR
Mindestbestellmenge: 50
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IRFP4110PBFXKMA1 Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe
IRFP4110PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.22 EUR
22+3.27 EUR
27+2.72 EUR
100+2.06 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R180C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A594EE1111BF&compId=IPP60R180C7-DTE.pdf?ci_sign=44faf0fccfdedd2c114610049948296d029df2e1
IPP60R180C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
Mindestbestellmenge: 24
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IPW60R180P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBE97122B28143&compId=IPW60R180P7.pdf?ci_sign=8c6446c121bdf566d55c0a9926608d4dd0617f73
IPW60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPP60R180P7XKSA1 Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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BAR6302LE6327XTMA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BAR6302LE6327XTMA1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.082 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
BAR6305WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BAR6306WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.094 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BAR6404WH6327XTSA1 Infineon-BAR64-04W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0263783902
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC70,SOT323; Ufmax: 1.1V; 250mW
Semiconductor structure: single diode
Case: SC70; SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BAR6406E6327HTSA1 Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC59; 250mW
Semiconductor structure: common anode
Case: SC59
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.056 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ICE3AR10080JZXKLA1 Infineon-ICE3AR10080JZ-DS-v02_02-en.pdf?fileId=db3a3043324cae8c01326fade0414605
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; DIP8; flyback; 85÷265VAC; Ubr: 800V; Usup: 10.5÷27V
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 85...265V AC
Breakdown voltage: 800V
Supply voltage: 10.5...27V
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.6 EUR
Mindestbestellmenge: 50
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CY8C6144LQI-S4F82 Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C6144LQI-S4F82
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+4.83 EUR
Mindestbestellmenge: 260
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IRFP3077PBFXKMA1 Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF150P221AKMA1 Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 186A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2183STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.89 EUR
Mindestbestellmenge: 2500
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IRS2113STRPBF irs2110.pdf?fileId=5546d462533600a40153567660ff27b0
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC16; 2.5A; Ch: 2; MOSFET
Operating temperature: -40...125°C
Number of channels: 2
Supply voltage: 10...20V
Input voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Mounting: SMD
Case: SOIC16
Output current: 2.5A
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.19 EUR
Mindestbestellmenge: 1000
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FP15R12W1T4_B3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFB03D87438E8A15&compId=FP15R12W1T4B3.pdf?ci_sign=87de13b40d54fef0761dd0ea90a3bd47bf610608
FP15R12W1T4_B3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Power dissipation: 130W
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.53 EUR
3+44.02 EUR
Mindestbestellmenge: 2
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IPB160N04S4H1ATMA1 Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 160A; 167W; TO263-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate-source voltage: 20V
Application: automotive industry
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.54 EUR
Mindestbestellmenge: 1000
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IRF7490TRPBF irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
Polarisation: unipolar
Drain current: 5.4A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IR2156STRPBF ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
Supply voltage: 10.5...16.5V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.63 EUR
Mindestbestellmenge: 2500
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IRF7313TRPBFXTMA1 irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFI4212H-117PXKMA1 irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Power dissipation: 7W
Case: TO220-5
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Features of semiconductor devices: Half-Bridge Power MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
56+1.29 EUR
63+1.14 EUR
68+1.06 EUR
100+1.04 EUR
Mindestbestellmenge: 47
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IPP120N20NFDAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC912B6685611C&compId=IPP120N20NFD-DTE.pdf?ci_sign=5d8d5dc96917148dec9e37cbde86228c5d8b765b
IPP120N20NFDAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Drain current: 84A
Power dissipation: 300W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.99 EUR
14+5.33 EUR
Mindestbestellmenge: 11
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IPA040N06NXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9A76E68AEC11C&compId=IPA040N06N-DTE.pdf?ci_sign=1c3cfe6adaab2643d43a54e61f8a24ea06fa857c
IPA040N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPP040N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99844487E211C&compId=IPP040N06NAKSA1-DTE.pdf?ci_sign=67b0feee2a82cae98c5fb9bd1e9ad1a2ae08adee
IPP040N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPA040N06NM5SXKSA1 Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa
IPA040N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 51A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 288A
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IAUZ40N06S5L050ATMA1 Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of channel: enhancement
Pulsed drain current: 252A
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N06S5N050ATMA1 Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of channel: enhancement
Pulsed drain current: 241A
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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IAUZ40N06S5N105ATMA1 Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 42W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of channel: enhancement
Pulsed drain current: 120A
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPD640N06LGBTMA1 IPD640N06L%2BG%2BRev1.4.pdf?fileId=db3a30431f848401011fcafb4ac00440&folderId=db3a30431ddc9372011ebafa04517f8b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 72A
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF7413ZTRPBFXTMA1 irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISP16DP10LMXTSA1 Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.53 EUR
Mindestbestellmenge: 1000
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IR21084STRPBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.32 EUR
Mindestbestellmenge: 2500
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IPF016N10NF2SATMA1 Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 274A; 300W; D2PAK-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 274A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+3.37 EUR
Mindestbestellmenge: 800
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IRF8734TRPBF pVersion=0046&contRep=ZT&docId=E221AE68DFF128F1A303005056AB0C4F&compId=irf8734pbf.pdf?ci_sign=d66a79d1ccd4cf24541e0d32ca4477ec60165a7c
IRF8734TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3034 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
103+0.69 EUR
117+0.61 EUR
128+0.56 EUR
139+0.52 EUR
250+0.46 EUR
500+0.44 EUR
Mindestbestellmenge: 79
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BAS7004E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
292+0.24 EUR
Mindestbestellmenge: 239
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BSS169H6906XTSA1 INFNS19228-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 170mA; 360mW; SOT23; SMT
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Electrical mounting: SMT
Gate charge: 2.8nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 2.9Ω
Gate-source voltage: 20V
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.32 EUR
Mindestbestellmenge: 3000
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TC299TX128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: Core: 32-bit
Mounting: SMD
Kind of core: 32-bit
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+82.78 EUR
Mindestbestellmenge: 500
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IRS2153DSTRPBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Produkt ist nicht verfügbar
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IRS2109STRPBF IRSDS11365-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.8 EUR
Mindestbestellmenge: 2500
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IPB19DP10NMATMA1 Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; D2PAK,TO263
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 100V
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.85 EUR
Mindestbestellmenge: 1000
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BSC100N10NSFGATMA1 BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.99 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7730PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5A09C3C68469&compId=IRFB7730PBF.pdf?ci_sign=f1135565e8d5008d31f5ebd82a3d3e627ae7a3bd
IRFB7730PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.02 EUR
40+1.82 EUR
Mindestbestellmenge: 36
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IRFS7730TRL7PP infineon-irfs7730-7p-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 269A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2304STRPBF ir2304.pdf?fileId=5546d462533600a4015355c9954a16e0
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Supply voltage: 10...20V
Input voltage: 10...20V
Output current: 0.13A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
auf Bestellung 92500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.7 EUR
Mindestbestellmenge: 2500
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IRFB4310ZPBFXKMA1 infineon-irfs4310z-datasheet-en.pdf?fileId=5546d462533600a4015356161b4d1e2d
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5180-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698775F8CE50469&compId=BTS5180-2EKA.pdf?ci_sign=dcbfa526d3bc10e800b4f1d73c4a0cc27042a66a
BTS5180-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Technology: PROFET™+ 12V
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 1.5A
On-state resistance: 0.33Ω
Number of channels: 2
Supply voltage: 8...18V DC
Kind of integrated circuit: high-side
Case: SO14
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
72+1 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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IRF3805STRLPBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF3709ZSTRRPBF irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 87A; 79W; D2PAK; SMT
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 17nC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.02 EUR
Mindestbestellmenge: 800
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IR2010STRPBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
IR2010STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Output current: -3...3A
Number of channels: 2
Mounting: SMD
Case: SO16
Kind of package: reel; tape
Supply voltage: 10...20V DC
Voltage class: 200V
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.25W
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
27+2.69 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2010SPBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
IR2010SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Case: SO16
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 200V
Kind of package: tube
Produkt ist nicht verfügbar
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