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IRFB4310PBF IRFB4310PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A45F1A6F5005056AB5A8F&compId=irfs4310.pdf?ci_sign=5f019cb77481638d1fb392219f3c0e042cb82bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.2 EUR
37+1.94 EUR
39+1.84 EUR
40+1.83 EUR
Mindestbestellmenge: 23
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IRFB4310ZPBF IRFB4310ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A4CF1A6F5005056AB5A8F&compId=irfb4310zpbf.pdf?ci_sign=3b66071c2947244729f80c74ae0a1ee1680ad33d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
33+2.19 EUR
35+2.06 EUR
Mindestbestellmenge: 17
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IRLR2905TRPBF IRLR2905TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227E7C7A9B11F1A303005056AB0C4F&compId=irlr2905pbf.pdf?ci_sign=2678948371069aa0e6fedfa56080ab82371e6360 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2294 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
63+1.15 EUR
149+0.48 EUR
158+0.45 EUR
Mindestbestellmenge: 44
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BAR81WH6327XTSA1 BAR81WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A26A2DA3067820&compId=BAR81.pdf?ci_sign=34e0f73e30b0ee29a7b8a6b9fc44f6096ce0a755 Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: switching
Features of semiconductor devices: RF
Mounting: SMD
Case: SOT343
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 80ns
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
177+0.41 EUR
199+0.36 EUR
227+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 69
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BAS28WH6327XTSA1 BAS28WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7FEB1F0F20469&compId=BAS28E6327HTSA1.pdf?ci_sign=61309fd24f01b821dccb60622dc4e896ab05d501 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Kind of package: reel; tape
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
Mindestbestellmenge: 250
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BC847CWH6327XTSA1 BC847CWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 5072 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
286+0.25 EUR
500+0.14 EUR
637+0.11 EUR
1309+0.055 EUR
1386+0.052 EUR
Mindestbestellmenge: 209
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BC849CWH6327XTSA1 BC849CWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 30V
Current gain: 420...800
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT323
Frequency: 250MHz
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)
788+0.091 EUR
1017+0.07 EUR
Mindestbestellmenge: 788
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BC858CWH6327 BC858CWH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 3047 Stücke:
Lieferzeit 14-21 Tag (e)
2193+0.033 EUR
2778+0.026 EUR
2959+0.024 EUR
Mindestbestellmenge: 2193
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BC860CWH6327 BC860CWH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C7A678BAC469&compId=BC860CWH6327.pdf?ci_sign=089acfec796841105af32fdb8af9d00879956a20 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)
740+0.097 EUR
995+0.072 EUR
1130+0.063 EUR
1300+0.055 EUR
1375+0.052 EUR
Mindestbestellmenge: 740
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BCR108WH6327 BCR108WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Mounting: SMD
Case: SOT323
Frequency: 170MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 3475 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
810+0.089 EUR
900+0.08 EUR
1175+0.061 EUR
1245+0.058 EUR
Mindestbestellmenge: 380
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BCR116WH6327 BCR116WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323
Frequency: 150MHz
auf Bestellung 5510 Stücke:
Lieferzeit 14-21 Tag (e)
410+0.17 EUR
855+0.084 EUR
945+0.076 EUR
1235+0.058 EUR
1305+0.055 EUR
Mindestbestellmenge: 410
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BCR129WH6327 BCR129WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Mounting: SMD
Case: SOT323
Frequency: 150MHz
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
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ICE2A180ZXKLA1
+1
 		ICE2A180ZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6564F9B8095EA&compId=ICE2A265.pdf?ci_sign=b24b004e9b31a188c10f6a1d3585527c36658a70 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Output current: 4.1A
Power: 29/17W
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 ICE2QS02GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39D498D700259&compId=ICE2QS02G.pdf?ci_sign=e4bd689e7d7905ed242b81dfcdc4240d74f0894e Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2232 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
68+1.06 EUR
70+1.03 EUR
74+0.97 EUR
75+0.96 EUR
100+0.93 EUR
Mindestbestellmenge: 41
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ICE3BR0665JXKLA1 ICE3BR0665JXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492A96FF2A258BF&compId=ICE3BR0665J.pdf?ci_sign=2485ba497152d65b19cbd6488c3afc8c6cbd4e28 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 4.8A
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.46 EUR
Mindestbestellmenge: 16
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ICE3BR1765JXKLA1 ICE3BR1765JXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492B90DB14E18BF&compId=ICE3BR1765J.pdf?ci_sign=b06ecb24355917be2440a416b519d692a3668673 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 1.5A
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.6 EUR
31+2.36 EUR
35+2.04 EUR
38+1.93 EUR
Mindestbestellmenge: 28
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ICE3RBR0665JZXKLA1
+1
 		ICE3RBR0665JZXKLA1 INFINEON TECHNOLOGIES INFNS27653-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
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ICE3RBR1765JZXKLA1
+1
 		ICE3RBR1765JZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE9949306FB11E998BF&compId=ICE3RBR1765JZ.pdf?ci_sign=51e37586229cebaa7e3a4060c0ad23c8a6fdf5ec Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
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ICE3RBR4765JZXKLA1
+1
 		ICE3RBR4765JZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492F6789822D8BF&compId=ICE3RBR4765JZ.pdf?ci_sign=ede773950aa5318fcee8c2f31f82a013a22b1219 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
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FP40R12KT3BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7D4FE1A26C0C4&compId=FP40R12KT3BOSA1.pdf?ci_sign=0aa9bc43484615c4a3a0a984a8b9b20af98dcae6 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BSC0906NSATMA1 BSC0906NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875B1D58D0211C&compId=BSC0906NS-DTE.pdf?ci_sign=86654d924452c6631898cc76a12dd5eb308b8719 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3012 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
120+0.6 EUR
156+0.46 EUR
173+0.41 EUR
190+0.38 EUR
Mindestbestellmenge: 81
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IRF7425TRPBF IRF7425TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db pVersion=0046&contRep=ZT&docId=E221A30B2ACF36F1A303005056AB0C4F&compId=irf7425pbf.pdf?ci_sign=8154e3d2bf5a42d04cc55b32e63b7ef1350777ab Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1106 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
53+1.36 EUR
76+0.94 EUR
81+0.89 EUR
1000+0.86 EUR
Mindestbestellmenge: 40
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IRFB3077PBF IRFB3077PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6B1F1A6F5005056AB5A8F&compId=irfb3077pbf.pdf?ci_sign=eb560ed04d0f30ce819df2a516ae68749dafec84 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 370W
Gate charge: 160nC
Technology: HEXFET®
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
36+1.99 EUR
44+1.64 EUR
46+1.56 EUR
Mindestbestellmenge: 33
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BGA524N6E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84AD79882F6640D2&compId=BGA524N6.pdf?ci_sign=71cefdfaa396b54cd6f68001cfc818fd4743cc12 Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Mounting: SMT
Number of channels: 1
Case: TSNP6
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Integrated circuit features: low noise
Operating voltage: 1.5...3.3V
Noise Figure: 0.55dB
Produkt ist nicht verfügbar
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BTS640S2G BTS640S2G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697CD6C94488469&compId=BTS640S2G.pdf?ci_sign=6ab6339076f7ce3792ac6be94012d605c8ecfe8b Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.78 EUR
18+3.98 EUR
20+3.76 EUR
Mindestbestellmenge: 10
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IR2183SPBF IR2183SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.05 EUR
21+3.55 EUR
22+3.35 EUR
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BAS2103WE6327HTSA1 BAS2103WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0 Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Kind of package: reel; tape
Power dissipation: 0.25W
auf Bestellung 7930 Stücke:
Lieferzeit 14-21 Tag (e)
182+0.39 EUR
300+0.24 EUR
455+0.16 EUR
550+0.13 EUR
618+0.12 EUR
1064+0.067 EUR
1137+0.063 EUR
Mindestbestellmenge: 182
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BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6 Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
335+0.21 EUR
375+0.19 EUR
425+0.17 EUR
485+0.15 EUR
510+0.14 EUR
Mindestbestellmenge: 335
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IRF630NPBF IRF630NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7BA5F1A6F5005056AB5A8F&compId=irf630n.pdf?ci_sign=18ba613c99e0732f47b97714cce46fc4863ae8f3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Case: TO220AB
Drain-source voltage: 200V
Drain current: 9.5A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 82W
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Gate charge: 23.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
82+0.88 EUR
101+0.71 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 62
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IRF630NSTRLPBF IRF630NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F679A2B26A9F1A303005056AB0C4F&compId=irf630npbf.pdf?ci_sign=b3ec9a3a45ee887745bbace6fe26eecf9c91c34a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Case: D2PAK
Drain-source voltage: 200V
Drain current: 9.5A
Type of transistor: N-MOSFET
Power dissipation: 82W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
Mindestbestellmenge: 55
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SPA17N80C3 SPA17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FFC5C5839651BF&compId=SPA17N80C3-DTE.pdf?ci_sign=fe1ec0eca04326ebd576e6c1ab6064af6db530e3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.28 EUR
22+3.3 EUR
23+3.12 EUR
Mindestbestellmenge: 14
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SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1C8B20D0EB1BF&compId=SPB17N80C3-DTE.pdf?ci_sign=7a9740a6d8782001fb1d2e3a766be0f2035a313f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 386 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.72 EUR
14+5.15 EUR
15+4.88 EUR
250+4.69 EUR
Mindestbestellmenge: 11
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SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
22+3.33 EUR
23+3.15 EUR
Mindestbestellmenge: 17
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SPW17N80C3 SPW17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74B604CA355EA&compId=SPW17N80C3.pdf?ci_sign=8964f39b04abcc8eed47c2e250888ed93a2c8204 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.28 EUR
12+5.99 EUR
13+5.68 EUR
Mindestbestellmenge: 9
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IRFR9120NTRPBF IRFR9120NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C58A9DBDE8F1A303005056AB0C4F&compId=irfr9120npbf.pdf?ci_sign=97754911db563eff748ba770e7a42e35041cc7f2 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1881 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
67+1.07 EUR
130+0.55 EUR
138+0.52 EUR
1000+0.51 EUR
Mindestbestellmenge: 47
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IRF9540NLPBF IRF9540NLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B19F963B22F1A303005056AB0C4F&compId=irf9540nspbf.pdf?ci_sign=bc8689f8c2e12a92cb8c0748a6a17d76e15aa7e0 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhancement
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
24+3 EUR
42+1.72 EUR
44+1.63 EUR
Mindestbestellmenge: 24
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IRF9540NPBF IRF9540NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B648F1A6F5005056AB5A8F&compId=irf9540n.pdf?ci_sign=1c565e0baf6d9ae4245f976eea01225d24493d80 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 64.7nC
Kind of package: tube
auf Bestellung 1214 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
88+0.82 EUR
93+0.77 EUR
1000+0.75 EUR
Mindestbestellmenge: 38
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IRF9540NSTRLPBF IRF9540NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B19F963B22F1A303005056AB0C4F&compId=irf9540nspbf.pdf?ci_sign=bc8689f8c2e12a92cb8c0748a6a17d76e15aa7e0 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRLR7843TRPBF IRLR7843TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF12A53ADB7F5EA&compId=IRLR7843TRPBF.pdf?ci_sign=811800f91ae3ae22ef949fd280234228e68a7137 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
57+1.27 EUR
61+1.17 EUR
81+0.89 EUR
87+0.83 EUR
500+0.82 EUR
Mindestbestellmenge: 43
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IRFP1405PBF IRFP1405PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B2A151B7CBBF4A15&compId=irfp1405pbf.pdf?ci_sign=dc842e80b63cc194f40a38909618016841365ed4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.48 EUR
18+4 EUR
24+3.07 EUR
25+2.9 EUR
Mindestbestellmenge: 16
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IRFP140NPBF IRFP140NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAA3F1A6F5005056AB5A8F&compId=irfp140n.pdf?ci_sign=fcc855513258caba7b984ad9c289a988f08e4045 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
44+1.63 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 34
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KIT_XMC11_BOOT_001 KIT_XMC11_BOOT_001 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CF734AC77FAAFA8&compId=KIT-XMC11-BOOT-001-DTE.pdf?ci_sign=ef6462c854920b7069dbe0820df11cbb8f6c9376 Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Kind of architecture: Cortex M0
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED diode x6; SEGGER J-Link OB Debugger; UART
Produkt ist nicht verfügbar
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SPD06N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC150N03LDGATMA1 BSC150N03LDGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DAC8ACBFD611C&compId=BSC150N03LDG-DTE.pdf?ci_sign=d2b4cd9da2292db7bf6454f06b5bc3388eaf7918 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F215A33882811C&compId=BSO150N03MDG-DTE.pdf?ci_sign=154f009a54dd3f61ead2ec23389e475b9675f797 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BAT62E6327HTSA1 BAT62E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0121C5D1FE469&compId=BAT62E6327HTSA1.pdf?ci_sign=ae9af7365eb6533f6d698a4341944e1ebfabda6e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT143; SMD; 40V; 20mA; 100mW
Case: SOT143
Mounting: SMD
Power dissipation: 0.1W
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
auf Bestellung 1217 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
202+0.35 EUR
242+0.3 EUR
355+0.2 EUR
397+0.18 EUR
435+0.16 EUR
Mindestbestellmenge: 148
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BAT6804WH6327XTSA1 BAT6804WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 8V; 0.13A; 150mW
Power dissipation: 0.15W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
132+0.54 EUR
201+0.36 EUR
213+0.34 EUR
300+0.33 EUR
500+0.32 EUR
Mindestbestellmenge: 107
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IR21271PBF IR21271PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3 description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.19 EUR
27+2.66 EUR
29+2.52 EUR
Mindestbestellmenge: 23
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IR21271SPBF IR21271SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
31+2.3 EUR
Mindestbestellmenge: 25
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IR2127PBF IR2127PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3 description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.76 EUR
22+3.39 EUR
28+2.6 EUR
30+2.46 EUR
Mindestbestellmenge: 20
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IR2127SPBF IR2127SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3443F1A6F5005056AB5A8F&compId=ir2127spbf.pdf?ci_sign=203f11987e306e198516b74fa296a60c82b6b5ef Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.16 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 23
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IGT60R190D1SATMA1 IGT60R190D1SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE4549364958BF&compId=IGT60R190D1SATMA1.pdf?ci_sign=500d5346868d9d0d739574ae6a7257e739be002c Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Gate current: 7.7mA
Drain-source voltage: 600V
Drain current: 12.5A
On-state resistance: 0.19Ω
Type of transistor: N-JFET
Power dissipation: 55.5W
Polarisation: unipolar
Kind of package: tape
Gate charge: 3.2nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhancement
Gate-source voltage: -10V
Pulsed drain current: 23A
Mounting: SMD
Case: PG-HSOF-8-3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
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IRFP3077PBF IRFP3077PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACADBF1A6F5005056AB5A8F&compId=irfp3077pbf.pdf?ci_sign=38aa3277a7433eff22b1057a39ac52cbd0fb9e09 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 340W
Gate charge: 160nC
Technology: HEXFET®
Produkt ist nicht verfügbar
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IR2117PBF IR2117PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: THT
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.39 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 22
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IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: SMD
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
40+1.79 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 36
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IR2111PBF IR2111PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33FDF1A6F5005056AB5A8F&compId=ir2111.pdf?ci_sign=cfae4f602fb7282d14336c0c0f16766cd0eadcb6 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
Power: 1W
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 24
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IR2111SPBF IR2111SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC01A6BF4675EA&compId=IR2111SPBF.pdf?ci_sign=e56e32f57f9de1414cd99b1b3cad0ce56d1a2232 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
Power: 625mW
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
27+2.72 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 24
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BC847PNH6327XTSA1 BC847PNH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6A4E750E1A469&compId=BC846PNH6327.pdf?ci_sign=b3d707a0c8687f7783b02bc7f504750648a3ba4c Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
auf Bestellung 2025 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
424+0.17 EUR
544+0.13 EUR
695+0.1 EUR
736+0.097 EUR
1000+0.094 EUR
Mindestbestellmenge: 295
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BSP125H6327XTSA1 BSP125H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A70B1D8F42B10B&compId=BSP125H6327XTSA1.pdf?ci_sign=8a5ccf72a5d3019ef8a407058267491d6698e74a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: SOT223
auf Bestellung 1066 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
88+0.81 EUR
153+0.47 EUR
162+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 74
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BSD235NH6327XTSA1 BSD235NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D9351407710B&compId=BSD235NH6327XTSA1.pdf?ci_sign=a8d66b3001a4107b60a345b215d15bbd6fd4e9b1 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.95A
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
305+0.23 EUR
371+0.19 EUR
463+0.15 EUR
603+0.12 EUR
Mindestbestellmenge: 179
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IRFB4310PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A45F1A6F5005056AB5A8F&compId=irfs4310.pdf?ci_sign=5f019cb77481638d1fb392219f3c0e042cb82bb2
IRFB4310PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
37+1.94 EUR
39+1.84 EUR
40+1.83 EUR
Mindestbestellmenge: 23
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IRFB4310ZPBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A4CF1A6F5005056AB5A8F&compId=irfb4310zpbf.pdf?ci_sign=3b66071c2947244729f80c74ae0a1ee1680ad33d
IRFB4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
33+2.19 EUR
35+2.06 EUR
Mindestbestellmenge: 17
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IRLR2905TRPBF description pVersion=0046&contRep=ZT&docId=E2227E7C7A9B11F1A303005056AB0C4F&compId=irlr2905pbf.pdf?ci_sign=2678948371069aa0e6fedfa56080ab82371e6360
IRLR2905TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2294 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
63+1.15 EUR
149+0.48 EUR
158+0.45 EUR
Mindestbestellmenge: 44
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BAR81WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A26A2DA3067820&compId=BAR81.pdf?ci_sign=34e0f73e30b0ee29a7b8a6b9fc44f6096ce0a755
BAR81WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Kind of package: reel; tape
Power dissipation: 0.1W
Type of diode: switching
Features of semiconductor devices: RF
Mounting: SMD
Case: SOT343
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Reverse recovery time: 80ns
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
177+0.41 EUR
199+0.36 EUR
227+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 69
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BAS28WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7FEB1F0F20469&compId=BAS28E6327HTSA1.pdf?ci_sign=61309fd24f01b821dccb60622dc4e896ab05d501
BAS28WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT343; 250mW; reel,tape
Kind of package: reel; tape
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
Mindestbestellmenge: 250
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BC847CWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC847CWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 5072 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
286+0.25 EUR
500+0.14 EUR
637+0.11 EUR
1309+0.055 EUR
1386+0.052 EUR
Mindestbestellmenge: 209
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BC849CWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC849CWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Collector-emitter voltage: 30V
Current gain: 420...800
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT323
Frequency: 250MHz
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
788+0.091 EUR
1017+0.07 EUR
Mindestbestellmenge: 788
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BC858CWH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4
BC858CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 3047 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2193+0.033 EUR
2778+0.026 EUR
2959+0.024 EUR
Mindestbestellmenge: 2193
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BC860CWH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C7A678BAC469&compId=BC860CWH6327.pdf?ci_sign=089acfec796841105af32fdb8af9d00879956a20
BC860CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
740+0.097 EUR
995+0.072 EUR
1130+0.063 EUR
1300+0.055 EUR
1375+0.052 EUR
Mindestbestellmenge: 740
Im Einkaufswagen  Stück im Wert von  UAH
BCR108WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150
BCR108WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ
Mounting: SMD
Case: SOT323
Frequency: 170MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 3475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
380+0.19 EUR
810+0.089 EUR
900+0.08 EUR
1175+0.061 EUR
1245+0.058 EUR
Mindestbestellmenge: 380
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BCR116WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35
BCR116WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 4.7kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT323
Frequency: 150MHz
auf Bestellung 5510 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
410+0.17 EUR
855+0.084 EUR
945+0.076 EUR
1235+0.058 EUR
1305+0.055 EUR
Mindestbestellmenge: 410
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BCR129WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf
BCR129WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Mounting: SMD
Case: SOT323
Frequency: 150MHz
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ICE2A180ZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6564F9B8095EA&compId=ICE2A265.pdf?ci_sign=b24b004e9b31a188c10f6a1d3585527c36658a70
ICE2A180ZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Output current: 4.1A
Power: 29/17W
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39D498D700259&compId=ICE2QS02G.pdf?ci_sign=e4bd689e7d7905ed242b81dfcdc4240d74f0894e
ICE2QS02GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
68+1.06 EUR
70+1.03 EUR
74+0.97 EUR
75+0.96 EUR
100+0.93 EUR
Mindestbestellmenge: 41
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ICE3BR0665JXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492A96FF2A258BF&compId=ICE3BR0665J.pdf?ci_sign=2485ba497152d65b19cbd6488c3afc8c6cbd4e28
ICE3BR0665JXKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.8A; 67kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 4.8A
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
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ICE3BR1765JXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492B90DB14E18BF&compId=ICE3BR1765J.pdf?ci_sign=b06ecb24355917be2440a416b519d692a3668673
ICE3BR1765JXKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 1.5A
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.6 EUR
31+2.36 EUR
35+2.04 EUR
38+1.93 EUR
Mindestbestellmenge: 28
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ICE3RBR0665JZXKLA1 INFNS27653-1.pdf?t.download=true&u=5oefqw
ICE3RBR0665JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 71/47W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
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ICE3RBR1765JZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE9949306FB11E998BF&compId=ICE3RBR1765JZ.pdf?ci_sign=51e37586229cebaa7e3a4060c0ad23c8a6fdf5ec
ICE3RBR1765JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 44/29W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
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ICE3RBR4765JZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492F6789822D8BF&compId=ICE3RBR4765JZ.pdf?ci_sign=ede773950aa5318fcee8c2f31f82a013a22b1219
ICE3RBR4765JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP40R12KT3BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7D4FE1A26C0C4&compId=FP40R12KT3BOSA1.pdf?ci_sign=0aa9bc43484615c4a3a0a984a8b9b20af98dcae6
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BSC0906NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875B1D58D0211C&compId=BSC0906NS-DTE.pdf?ci_sign=86654d924452c6631898cc76a12dd5eb308b8719
BSC0906NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3012 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
120+0.6 EUR
156+0.46 EUR
173+0.41 EUR
190+0.38 EUR
Mindestbestellmenge: 81
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IRF7425TRPBF pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db pVersion=0046&contRep=ZT&docId=E221A30B2ACF36F1A303005056AB0C4F&compId=irf7425pbf.pdf?ci_sign=8154e3d2bf5a42d04cc55b32e63b7ef1350777ab
IRF7425TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
53+1.36 EUR
76+0.94 EUR
81+0.89 EUR
1000+0.86 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3077PBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B6B1F1A6F5005056AB5A8F&compId=irfb3077pbf.pdf?ci_sign=eb560ed04d0f30ce819df2a516ae68749dafec84
IRFB3077PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 370W
Gate charge: 160nC
Technology: HEXFET®
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
36+1.99 EUR
44+1.64 EUR
46+1.56 EUR
Mindestbestellmenge: 33
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BGA524N6E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84AD79882F6640D2&compId=BGA524N6.pdf?ci_sign=71cefdfaa396b54cd6f68001cfc818fd4743cc12
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3V; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Mounting: SMT
Number of channels: 1
Case: TSNP6
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Integrated circuit features: low noise
Operating voltage: 1.5...3.3V
Noise Figure: 0.55dB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS640S2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697CD6C94488469&compId=BTS640S2G.pdf?ci_sign=6ab6339076f7ce3792ac6be94012d605c8ecfe8b
BTS640S2G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.78 EUR
18+3.98 EUR
20+3.76 EUR
Mindestbestellmenge: 10
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IR2183SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff
IR2183SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.05 EUR
21+3.55 EUR
22+3.35 EUR
Mindestbestellmenge: 15
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BAS2103WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0
BAS2103WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOD323; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD323
Kind of package: reel; tape
Power dissipation: 0.25W
auf Bestellung 7930 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
182+0.39 EUR
300+0.24 EUR
455+0.16 EUR
550+0.13 EUR
618+0.12 EUR
1064+0.067 EUR
1137+0.063 EUR
Mindestbestellmenge: 182
Im Einkaufswagen  Stück im Wert von  UAH
BA592E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 2470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
335+0.21 EUR
375+0.19 EUR
425+0.17 EUR
485+0.15 EUR
510+0.14 EUR
Mindestbestellmenge: 335
Im Einkaufswagen  Stück im Wert von  UAH
IRF630NPBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7BA5F1A6F5005056AB5A8F&compId=irf630n.pdf?ci_sign=18ba613c99e0732f47b97714cce46fc4863ae8f3
IRF630NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Case: TO220AB
Drain-source voltage: 200V
Drain current: 9.5A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 82W
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Gate charge: 23.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
82+0.88 EUR
101+0.71 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
IRF630NSTRLPBF pVersion=0046&contRep=ZT&docId=E21F679A2B26A9F1A303005056AB0C4F&compId=irf630npbf.pdf?ci_sign=b3ec9a3a45ee887745bbace6fe26eecf9c91c34a
IRF630NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Case: D2PAK
Drain-source voltage: 200V
Drain current: 9.5A
Type of transistor: N-MOSFET
Power dissipation: 82W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
Mindestbestellmenge: 55
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SPA17N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FFC5C5839651BF&compId=SPA17N80C3-DTE.pdf?ci_sign=fe1ec0eca04326ebd576e6c1ab6064af6db530e3
SPA17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.28 EUR
22+3.3 EUR
23+3.12 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1C8B20D0EB1BF&compId=SPB17N80C3-DTE.pdf?ci_sign=7a9740a6d8782001fb1d2e3a766be0f2035a313f
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 386 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.72 EUR
14+5.15 EUR
15+4.88 EUR
250+4.69 EUR
Mindestbestellmenge: 11
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SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
22+3.33 EUR
23+3.15 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SPW17N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74B604CA355EA&compId=SPW17N80C3.pdf?ci_sign=8964f39b04abcc8eed47c2e250888ed93a2c8204
SPW17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.28 EUR
12+5.99 EUR
13+5.68 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9120NTRPBF description pVersion=0046&contRep=ZT&docId=E221C58A9DBDE8F1A303005056AB0C4F&compId=irfr9120npbf.pdf?ci_sign=97754911db563eff748ba770e7a42e35041cc7f2
IRFR9120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1881 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
67+1.07 EUR
130+0.55 EUR
138+0.52 EUR
1000+0.51 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IRF9540NLPBF pVersion=0046&contRep=ZT&docId=E221B19F963B22F1A303005056AB0C4F&compId=irf9540nspbf.pdf?ci_sign=bc8689f8c2e12a92cb8c0748a6a17d76e15aa7e0
IRF9540NLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhancement
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
42+1.72 EUR
44+1.63 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF9540NPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B648F1A6F5005056AB5A8F&compId=irf9540n.pdf?ci_sign=1c565e0baf6d9ae4245f976eea01225d24493d80
IRF9540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 64.7nC
Kind of package: tube
auf Bestellung 1214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
88+0.82 EUR
93+0.77 EUR
1000+0.75 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRF9540NSTRLPBF description pVersion=0046&contRep=ZT&docId=E221B19F963B22F1A303005056AB0C4F&compId=irf9540nspbf.pdf?ci_sign=bc8689f8c2e12a92cb8c0748a6a17d76e15aa7e0
IRF9540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRLR7843TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF12A53ADB7F5EA&compId=IRLR7843TRPBF.pdf?ci_sign=811800f91ae3ae22ef949fd280234228e68a7137
IRLR7843TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
57+1.27 EUR
61+1.17 EUR
81+0.89 EUR
87+0.83 EUR
500+0.82 EUR
Mindestbestellmenge: 43
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IRFP1405PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B2A151B7CBBF4A15&compId=irfp1405pbf.pdf?ci_sign=dc842e80b63cc194f40a38909618016841365ed4
IRFP1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
18+4 EUR
24+3.07 EUR
25+2.9 EUR
Mindestbestellmenge: 16
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IRFP140NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACAA3F1A6F5005056AB5A8F&compId=irfp140n.pdf?ci_sign=fcc855513258caba7b984ad9c289a988f08e4045
IRFP140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
44+1.63 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 34
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KIT_XMC11_BOOT_001 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CF734AC77FAAFA8&compId=KIT-XMC11-BOOT-001-DTE.pdf?ci_sign=ef6462c854920b7069dbe0820df11cbb8f6c9376
KIT_XMC11_BOOT_001
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Kind of architecture: Cortex M0
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED diode x6; SEGGER J-Link OB Debugger; UART
Produkt ist nicht verfügbar
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SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC150N03LDGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DAC8ACBFD611C&compId=BSC150N03LDG-DTE.pdf?ci_sign=d2b4cd9da2292db7bf6454f06b5bc3388eaf7918
BSC150N03LDGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F215A33882811C&compId=BSO150N03MDG-DTE.pdf?ci_sign=154f009a54dd3f61ead2ec23389e475b9675f797
BSO150N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT62E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0121C5D1FE469&compId=BAT62E6327HTSA1.pdf?ci_sign=ae9af7365eb6533f6d698a4341944e1ebfabda6e
BAT62E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT143; SMD; 40V; 20mA; 100mW
Case: SOT143
Mounting: SMD
Power dissipation: 0.1W
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
auf Bestellung 1217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
202+0.35 EUR
242+0.3 EUR
355+0.2 EUR
397+0.18 EUR
435+0.16 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
BAT6804WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64
BAT6804WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 8V; 0.13A; 150mW
Power dissipation: 0.15W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
132+0.54 EUR
201+0.36 EUR
213+0.34 EUR
300+0.33 EUR
500+0.32 EUR
Mindestbestellmenge: 107
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IR21271PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3
IR21271PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.19 EUR
27+2.66 EUR
29+2.52 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR21271SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3
IR21271SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
31+2.3 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IR2127PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3
IR2127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.76 EUR
22+3.39 EUR
28+2.6 EUR
30+2.46 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IR2127SPBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3443F1A6F5005056AB5A8F&compId=ir2127spbf.pdf?ci_sign=203f11987e306e198516b74fa296a60c82b6b5ef
IR2127SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IGT60R190D1SATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE4549364958BF&compId=IGT60R190D1SATMA1.pdf?ci_sign=500d5346868d9d0d739574ae6a7257e739be002c
IGT60R190D1SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Gate current: 7.7mA
Drain-source voltage: 600V
Drain current: 12.5A
On-state resistance: 0.19Ω
Type of transistor: N-JFET
Power dissipation: 55.5W
Polarisation: unipolar
Kind of package: tape
Gate charge: 3.2nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhancement
Gate-source voltage: -10V
Pulsed drain current: 23A
Mounting: SMD
Case: PG-HSOF-8-3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3077PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACADBF1A6F5005056AB5A8F&compId=irfp3077pbf.pdf?ci_sign=38aa3277a7433eff22b1057a39ac52cbd0fb9e09
IRFP3077PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 340W
Gate charge: 160nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2117PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: THT
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR2117SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
Supply voltage: 10...20V DC
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: SMD
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
40+1.79 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IR2111PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD33FDF1A6F5005056AB5A8F&compId=ir2111.pdf?ci_sign=cfae4f602fb7282d14336c0c0f16766cd0eadcb6
IR2111PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
Power: 1W
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IR2111SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC01A6BF4675EA&compId=IR2111SPBF.pdf?ci_sign=e56e32f57f9de1414cd99b1b3cad0ce56d1a2232
IR2111SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
Power: 625mW
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
27+2.72 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BC847PNH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6A4E750E1A469&compId=BC846PNH6327.pdf?ci_sign=b3d707a0c8687f7783b02bc7f504750648a3ba4c
BC847PNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
auf Bestellung 2025 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
424+0.17 EUR
544+0.13 EUR
695+0.1 EUR
736+0.097 EUR
1000+0.094 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BSP125H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A70B1D8F42B10B&compId=BSP125H6327XTSA1.pdf?ci_sign=8a5ccf72a5d3019ef8a407058267491d6698e74a
BSP125H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: SOT223
auf Bestellung 1066 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
88+0.81 EUR
153+0.47 EUR
162+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
BSD235NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D9351407710B&compId=BSD235NH6327XTSA1.pdf?ci_sign=a8d66b3001a4107b60a345b215d15bbd6fd4e9b1
BSD235NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.95A
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
305+0.23 EUR
371+0.19 EUR
463+0.15 EUR
603+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
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