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BSD223PH6327XTSA1 BSD223PH6327XTSA1 INFINEON TECHNOLOGIES BSD223PH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Polarisation: unipolar
Power dissipation: 0.25W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 1819 Stücke:
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209+0.34 EUR
296+0.24 EUR
428+0.17 EUR
506+0.14 EUR
603+0.12 EUR
695+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 209
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BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 INFINEON TECHNOLOGIES BSL307SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -5.5A
On-state resistance: 43mΩ
Polarisation: unipolar
Power dissipation: 2W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
144+0.5 EUR
197+0.36 EUR
250+0.32 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 105
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IRS21271STRPBF INFINEON TECHNOLOGIES IRS212XXSTRPBf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Supply voltage: 9...20V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Output current: -600...290mA
Turn-off time: 190ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Voltage class: 600V
Kind of integrated circuit: current sensor; high-side
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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BSR315PH6327XTSA1 BSR315PH6327XTSA1 INFINEON TECHNOLOGIES BSR315PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2395 Stücke:
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91+0.79 EUR
134+0.54 EUR
187+0.38 EUR
216+0.33 EUR
261+0.27 EUR
500+0.24 EUR
1000+0.21 EUR
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IRFP4768PBFXKMA1 IRFP4768PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
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15+4.86 EUR
20+3.63 EUR
25+3.3 EUR
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IR2108STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 description Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: SOIC8
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Input voltage: 10...20V
Maximum output current: 0.35A
Turn-on time: 220ns
Power dissipation: 0.625W
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.89 EUR
Mindestbestellmenge: 2500
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IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES IPP030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 27 Stücke:
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17+4.26 EUR
21+3.42 EUR
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ITS4140N ITS4140N INFINEON TECHNOLOGIES ITS4140N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 3012 Stücke:
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44+1.66 EUR
48+1.5 EUR
55+1.32 EUR
100+1.2 EUR
500+1.13 EUR
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BSS159NH6327XTSA2 BSS159NH6327XTSA2 INFINEON TECHNOLOGIES BSS159NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 8Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: depletion
Case: SOT23
auf Bestellung 442 Stücke:
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139+0.51 EUR
202+0.35 EUR
257+0.28 EUR
309+0.23 EUR
368+0.19 EUR
442+0.16 EUR
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EVAL-IMM101T-046TOBO1 (SP004177752)
+2
 		EVAL-IMM101T-046TOBO1 (SP004177752) INFINEON TECHNOLOGIES EVALIMM101T015TOBO.PDF Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Kit contents: prototype board
Type of development kit: evaluation
Interface: GPIO; I2C; PWM; UART
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Application: motors
Produkt ist nicht verfügbar
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BF2040E6814HTSA1 BF2040E6814HTSA1 INFINEON TECHNOLOGIES BF2040.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Kind of channel: depletion
Features of semiconductor devices: dual gate
Type of transistor: N-MOSFET
Kind of transistor: RF
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.2W
Drain-source voltage: 8V
Gate-source voltage: ±10V
Open-loop gain: 23dB
Frequency: 800MHz
Kind of package: reel; tape
Electrical mounting: SMT
Case: SOT143
auf Bestellung 3630 Stücke:
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230+0.31 EUR
335+0.21 EUR
380+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 230
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T560N16TOFXPSA1 T560N16TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Gate current: 200mA
Load current: 559A
Max. load current: 809A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
auf Bestellung 11 Stücke:
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1+148.88 EUR
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BCR402WH6327XTSA1 BCR402WH6327XTSA1 INFINEON TECHNOLOGIES bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Topology: single transistor
Output current: 20...60mA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
414+0.17 EUR
468+0.15 EUR
521+0.14 EUR
1000+0.13 EUR
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BB639E7904HTSA1 BB639E7904HTSA1 INFINEON TECHNOLOGIES BB639_659.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 2.4...40pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
auf Bestellung 2589 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
404+0.18 EUR
567+0.13 EUR
594+0.12 EUR
764+0.094 EUR
1000+0.085 EUR
Mindestbestellmenge: 295
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 INFINEON TECHNOLOGIES IPB015N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.5mΩ
Drain current: 180A
Drain-source voltage: 80V
Power dissipation: 375W
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.9 EUR
20+3.73 EUR
100+3.35 EUR
250+3.16 EUR
Mindestbestellmenge: 19
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IR2114SSPBF IR2114SSPBF INFINEON TECHNOLOGIES IR2114SSPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SSOP24
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Turn-off time: 440ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.59 EUR
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BC847BE6327HTSA1 BC847BE6327HTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
596+0.12 EUR
842+0.085 EUR
888+0.08 EUR
Mindestbestellmenge: 500
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IPB011N04LGATMA1 IPB011N04LGATMA1 INFINEON TECHNOLOGIES IPB011N04LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB011N04NGATMA1 IPB011N04NGATMA1 INFINEON TECHNOLOGIES IPB011N04NG-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Produkt ist nicht verfügbar
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IKD06N60RFATMA1 IKD06N60RFATMA1 INFINEON TECHNOLOGIES IKD06N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRF8010PBF IRF8010PBF INFINEON TECHNOLOGIES irf8010.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 81nC
On-state resistance: 15mΩ
auf Bestellung 430 Stücke:
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47+1.54 EUR
52+1.4 EUR
55+1.3 EUR
65+1.1 EUR
100+1.03 EUR
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BSC010N04LSATMA1 BSC010N04LSATMA1 INFINEON TECHNOLOGIES BSC010N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010N04LSIATMA1 BSC010N04LSIATMA1 INFINEON TECHNOLOGIES BSC010N04LSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3006GPBF IRFB3006GPBF INFINEON TECHNOLOGIES irfb3006gpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF2804L AUIRF2804L INFINEON TECHNOLOGIES irf2804.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
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AUIRF7342QTR AUIRF7342QTR INFINEON TECHNOLOGIES auirf7342q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.17Ω
Gate charge: 26nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSP752R BSP752R INFINEON TECHNOLOGIES BSP752R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Kind of output: N-Channel
auf Bestellung 2333 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
31+2.36 EUR
34+2.14 EUR
100+1.83 EUR
250+1.64 EUR
500+1.52 EUR
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IPD020N03LF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 143A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 143A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: 20V
On-state resistance: 2.05mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhancement
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.65 EUR
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ICL8001GXUMA1 ICL8001GXUMA1 INFINEON TECHNOLOGIES ICL8001G-DTE.pdf Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
auf Bestellung 117 Stücke:
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54+1.34 EUR
61+1.19 EUR
67+1.07 EUR
100+1.04 EUR
Mindestbestellmenge: 54
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XMC4500F100F768ACXQMA1 XMC4500F100F768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 160kB SRAM; 768kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
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XMC4502F100F768ACXQMA1 XMC4502F100F768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 160kB SRAM; 768kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
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IRF8010STRLPBF IRF8010STRLPBF INFINEON TECHNOLOGIES irf8010spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 INFINEON TECHNOLOGIES BSO220N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 INFINEON TECHNOLOGIES IKB30N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 52ns
Turn-off time: 184ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 120A
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IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 INFINEON TECHNOLOGIES IKB30N65ES5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
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DD340N20SHPSA1 INFINEON TECHNOLOGIES DD340N20S.pdf Category: Diode modules
Description: Semiconductor module: diode; double series; 2kV; If: 330A; screw
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
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IRS21864STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
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2500+2 EUR
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2ED300C17SROHSBPSA1 INFINEON TECHNOLOGIES 2ED300C17S.pdf Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -25...85°C
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Technology: EiceDRIVER™; SiC
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Topology: IGBT half-bridge
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BGX50AE6327 BGX50AE6327 INFINEON TECHNOLOGIES BGX50AE6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; 6ns; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Features of semiconductor devices: fast switching
Semiconductor structure: bridge rectifier
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Reverse recovery time: 6ns
Power dissipation: 0.21W
auf Bestellung 191 Stücke:
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191+0.37 EUR
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PVG612PBF INFINEON TECHNOLOGIES pvg612.pdf?fileId=5546d462533600a401535683c1892937 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 470 Stücke:
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50+7.11 EUR
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IRF7465TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7465-datasheet-en.pdf?fileId=5546d462533600a4015355fef2681c08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF7465TRPBF IRF7465TRPBF INFINEON TECHNOLOGIES irf7465pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFP4229PBF IRFP4229PBF INFINEON TECHNOLOGIES irfp4229pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
15+5 EUR
17+4.45 EUR
21+3.42 EUR
24+3.09 EUR
30+3.02 EUR
Mindestbestellmenge: 15
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IPP330P10NMAKSA1 INFINEON TECHNOLOGIES Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 62A; 300W; PG-TO220-3
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 27.1mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 598 Stücke:
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50+3.1 EUR
200+2.79 EUR
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BTN8962TAAUMA1 BTN8962TAAUMA1 INFINEON TECHNOLOGIES BTN8962TA.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Output current: -27...30A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
On-state resistance: 14.2mΩ
Operating voltage: 5.5...40V DC
Application: DC motors
Topology: MOSFET half-bridge
Technology: NovalithIC™
Kind of integrated circuit: IMC; motor controller
auf Bestellung 586 Stücke:
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13+5.52 EUR
18+4.2 EUR
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BCR08PNH6327 BCR08PNH6327 INFINEON TECHNOLOGIES BCR08PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SOT363
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
auf Bestellung 2735 Stücke:
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365+0.2 EUR
410+0.17 EUR
465+0.15 EUR
535+0.13 EUR
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SPP15P10PLHXKSA1 SPP15P10PLHXKSA1 INFINEON TECHNOLOGIES SPP15P10PLHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.46 EUR
39+1.84 EUR
53+1.36 EUR
100+1.2 EUR
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IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES IPW60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRS25401PBF IRS25401PBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Number of channels: 2
Mounting: THT
Case: DIP8
Kind of package: tube
Operating temperature: -25...125°C
Supply voltage: 8...16.6V DC
Output current: -700...500mA
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
Voltage class: 200V
Kind of integrated circuit: high-/low-side; LED driver
Topology: buck
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
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IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 INFINEON TECHNOLOGIES IPP048N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Drain current: 120A
Power dissipation: 300W
Drain-source voltage: 120V
auf Bestellung 54 Stücke:
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17+4.46 EUR
19+3.92 EUR
50+2.72 EUR
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IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES IPP147N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 14.7mΩ
Gate-source voltage: ±20V
Drain current: 56A
Power dissipation: 107W
Drain-source voltage: 120V
auf Bestellung 39 Stücke:
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38+1.9 EUR
39+1.83 EUR
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IPP114N12N3GXKSA1 IPP114N12N3GXKSA1 INFINEON TECHNOLOGIES IPP114N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 11.4mΩ
Gate-source voltage: ±20V
Drain current: 75A
Power dissipation: 136W
Drain-source voltage: 120V
auf Bestellung 55 Stücke:
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26+2.82 EUR
31+2.36 EUR
50+1.5 EUR
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IPP072N10N3GXKSA1 IPP072N10N3GXKSA1 INFINEON TECHNOLOGIES IPP072N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.66 EUR
61+1.17 EUR
66+1.09 EUR
Mindestbestellmenge: 27
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IRFR4620TRLPBF IRFR4620TRLPBF INFINEON TECHNOLOGIES irfr4620pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2600 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.8 EUR
38+1.93 EUR
45+1.62 EUR
51+1.42 EUR
100+1.29 EUR
250+1.12 EUR
500+1.03 EUR
1000+0.96 EUR
1500+0.94 EUR
Mindestbestellmenge: 26
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IR2118PBF IR2118PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: DIP8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
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BCP55H6327XTSA1 BCP55H6327XTSA1 INFINEON TECHNOLOGIES BCP55H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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BGT24LTR11N16E6327XTSA1 BGT24LTR11N16E6327XTSA1 INFINEON TECHNOLOGIES BGT24LTR11.pdf Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Case: TSNP16
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.2...3.4V DC
DC supply current: 45mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 10dB
Produkt ist nicht verfügbar
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BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
414+0.17 EUR
642+0.11 EUR
807+0.089 EUR
1000+0.087 EUR
Mindestbestellmenge: 414
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ICE3A1065ELJFKLA1 INFINEON TECHNOLOGIES Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 650V; 100kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Breakdown voltage: 650V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.93 EUR
Mindestbestellmenge: 50
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BSD223PH6327XTSA1 BSD223PH6327XTSA1-DTE.pdf
BSD223PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.39A
On-state resistance: 1.2Ω
Polarisation: unipolar
Power dissipation: 0.25W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
296+0.24 EUR
428+0.17 EUR
506+0.14 EUR
603+0.12 EUR
695+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 209
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BSL307SPH6327XTSA1 BSL307SPH6327XTSA1-DTE.pdf
BSL307SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -5.5A
On-state resistance: 43mΩ
Polarisation: unipolar
Power dissipation: 2W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
144+0.5 EUR
197+0.36 EUR
250+0.32 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 105
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IRS21271STRPBF IRS212XXSTRPBf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Supply voltage: 9...20V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Output current: -600...290mA
Turn-off time: 190ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Voltage class: 600V
Kind of integrated circuit: current sensor; high-side
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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BSR315PH6327XTSA1 BSR315PH6327XTSA1.pdf
BSR315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
134+0.54 EUR
187+0.38 EUR
216+0.33 EUR
261+0.27 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 91
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IRFP4768PBFXKMA1 Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021
IRFP4768PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
20+3.63 EUR
25+3.3 EUR
Mindestbestellmenge: 15
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IR2108STRPBF description ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: SOIC8
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Input voltage: 10...20V
Maximum output current: 0.35A
Turn-on time: 220ns
Power dissipation: 0.625W
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.89 EUR
Mindestbestellmenge: 2500
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IPP030N10N3GXKSA1 IPP030N10N3G-DTE.pdf
IPP030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
21+3.42 EUR
Mindestbestellmenge: 17
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ITS4140N ITS4140N.pdf
ITS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 3012 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
48+1.5 EUR
55+1.32 EUR
100+1.2 EUR
500+1.13 EUR
Mindestbestellmenge: 44
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BSS159NH6327XTSA2 BSS159NH6327XTSA2.pdf
BSS159NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 8Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: depletion
Case: SOT23
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
202+0.35 EUR
257+0.28 EUR
309+0.23 EUR
368+0.19 EUR
442+0.16 EUR
Mindestbestellmenge: 139
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EVAL-IMM101T-046TOBO1 (SP004177752) EVALIMM101T015TOBO.PDF
EVAL-IMM101T-046TOBO1 (SP004177752)
+2
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Kit contents: prototype board
Type of development kit: evaluation
Interface: GPIO; I2C; PWM; UART
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Application: motors
Produkt ist nicht verfügbar
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BF2040E6814HTSA1 BF2040.pdf
BF2040E6814HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Kind of channel: depletion
Features of semiconductor devices: dual gate
Type of transistor: N-MOSFET
Kind of transistor: RF
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.2W
Drain-source voltage: 8V
Gate-source voltage: ±10V
Open-loop gain: 23dB
Frequency: 800MHz
Kind of package: reel; tape
Electrical mounting: SMT
Case: SOT143
auf Bestellung 3630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
230+0.31 EUR
335+0.21 EUR
380+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 230
Im Einkaufswagen  Stück im Wert von  UAH
T560N16TOFXPSA1 T560N.pdf
T560N16TOFXPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Gate current: 200mA
Load current: 559A
Max. load current: 809A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+148.88 EUR
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BCR402WH6327XTSA1 bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Topology: single transistor
Output current: 20...60mA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
414+0.17 EUR
468+0.15 EUR
521+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 99
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BB639E7904HTSA1 BB639_659.pdf
BB639E7904HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 2.4...40pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
auf Bestellung 2589 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
404+0.18 EUR
567+0.13 EUR
594+0.12 EUR
764+0.094 EUR
1000+0.085 EUR
Mindestbestellmenge: 295
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IPB015N08N5ATMA1 IPB015N08N5-DTE.pdf
IPB015N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
On-state resistance: 1.5mΩ
Drain current: 180A
Drain-source voltage: 80V
Power dissipation: 375W
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.9 EUR
20+3.73 EUR
100+3.35 EUR
250+3.16 EUR
Mindestbestellmenge: 19
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IR2114SSPBF IR2114SSPBF.pdf
IR2114SSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SSOP24
Output current: -1.5...1A
Power: 1.5W
Number of channels: 2
Supply voltage: 10.4...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 0.6/1.2kV
Turn-on time: 440ns
Turn-off time: 440ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
Mindestbestellmenge: 9
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BC847BE6327HTSA1 bc847_8_9_bc850.pdf
BC847BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
596+0.12 EUR
842+0.085 EUR
888+0.08 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
IPB011N04LGATMA1 IPB011N04LG-DTE.pdf
IPB011N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB011N04NGATMA1 IPB011N04NG-dte.pdf
IPB011N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Produkt ist nicht verfügbar
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IKD06N60RFATMA1 IKD06N60RF.pdf
IKD06N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRF8010PBF description irf8010.pdf
IRF8010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 81nC
On-state resistance: 15mΩ
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
52+1.4 EUR
55+1.3 EUR
65+1.1 EUR
100+1.03 EUR
Mindestbestellmenge: 47
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BSC010N04LSATMA1 BSC010N04LS-DTE.pdf
BSC010N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010N04LSIATMA1 BSC010N04LSI-DTE.pdf
BSC010N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3006GPBF irfb3006gpbf.pdf
IRFB3006GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF2804L irf2804.pdf
AUIRF2804L
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
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AUIRF7342QTR auirf7342q.pdf
AUIRF7342QTR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.17Ω
Gate charge: 26nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSP752R BSP752R.pdf
BSP752R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Kind of output: N-Channel
auf Bestellung 2333 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
31+2.36 EUR
34+2.14 EUR
100+1.83 EUR
250+1.64 EUR
500+1.52 EUR
Mindestbestellmenge: 20
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IPD020N03LF2SATMA1 Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 143A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 143A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: 20V
On-state resistance: 2.05mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhancement
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.65 EUR
Mindestbestellmenge: 2000
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ICL8001GXUMA1 ICL8001G-DTE.pdf
ICL8001GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
61+1.19 EUR
67+1.07 EUR
100+1.04 EUR
Mindestbestellmenge: 54
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XMC4500F100F768ACXQMA1 XMC4500-DTE.pdf
XMC4500F100F768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 160kB SRAM; 768kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
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XMC4502F100F768ACXQMA1 XMC4500-DTE.pdf
XMC4502F100F768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 160kB SRAM; 768kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 26
Supply voltage: 3.3V DC
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
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IRF8010STRLPBF irf8010spbf.pdf
IRF8010STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSO220N03MDGXUMA1 BSO220N03MDG-DTE.pdf
BSO220N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IKB30N65EH5ATMA1 IKB30N65EH5.pdf
IKB30N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 52ns
Turn-off time: 184ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IKB30N65ES5ATMA1 IKB30N65ES5.pdf
IKB30N65ES5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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DD340N20SHPSA1 DD340N20S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Semiconductor module: diode; double series; 2kV; If: 330A; screw
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
Produkt ist nicht verfügbar
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IRS21864STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2 EUR
Mindestbestellmenge: 2500
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2ED300C17SROHSBPSA1 2ED300C17S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -25...85°C
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Technology: EiceDRIVER™; SiC
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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BGX50AE6327 BGX50AE6327.pdf
BGX50AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; 6ns; SOT143; 210mW; reel,tape
Max. off-state voltage: 50V
Load current: 0.14A
Case: SOT143
Features of semiconductor devices: fast switching
Semiconductor structure: bridge rectifier
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Reverse recovery time: 6ns
Power dissipation: 0.21W
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
191+0.37 EUR
Mindestbestellmenge: 191
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PVG612PBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.11 EUR
Mindestbestellmenge: 50
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IRF7465TRPBFXTMA1 infineon-irf7465-datasheet-en.pdf?fileId=5546d462533600a4015355fef2681c08
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7465TRPBF irf7465pbf.pdf
IRF7465TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFP4229PBF irfp4229pbf.pdf
IRFP4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
Mindestbestellmenge: 36
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IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
17+4.45 EUR
21+3.42 EUR
24+3.09 EUR
30+3.02 EUR
Mindestbestellmenge: 15
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IPP330P10NMAKSA1 Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 62A; 300W; PG-TO220-3
Type of transistor: P-MOSFET
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 27.1mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.1 EUR
200+2.79 EUR
Mindestbestellmenge: 50
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BTN8962TAAUMA1 BTN8962TA.pdf
BTN8962TAAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Output current: -27...30A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
On-state resistance: 14.2mΩ
Operating voltage: 5.5...40V DC
Application: DC motors
Topology: MOSFET half-bridge
Technology: NovalithIC™
Kind of integrated circuit: IMC; motor controller
auf Bestellung 586 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
18+4.2 EUR
Mindestbestellmenge: 13
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BCR08PNH6327 BCR08PNH6327.pdf
BCR08PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SOT363
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
365+0.2 EUR
410+0.17 EUR
465+0.15 EUR
535+0.13 EUR
Mindestbestellmenge: 365
Im Einkaufswagen  Stück im Wert von  UAH
SPP15P10PLHXKSA1 SPP15P10PLHXKSA1-DTE.pdf
SPP15P10PLHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
39+1.84 EUR
53+1.36 EUR
100+1.2 EUR
Mindestbestellmenge: 30
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IPW60R125C6FKSA1 IPW60R125C6-DTE.pdf
IPW60R125C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS25401PBF irs25401pbf.pdf
IRS25401PBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Number of channels: 2
Mounting: THT
Case: DIP8
Kind of package: tube
Operating temperature: -25...125°C
Supply voltage: 8...16.6V DC
Output current: -700...500mA
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
Voltage class: 200V
Kind of integrated circuit: high-/low-side; LED driver
Topology: buck
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
Mindestbestellmenge: 38
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IPP048N12N3GXKSA1 IPP048N12N3G-DTE.pdf
IPP048N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Drain current: 120A
Power dissipation: 300W
Drain-source voltage: 120V
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
19+3.92 EUR
50+2.72 EUR
Mindestbestellmenge: 17
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IPP147N12N3GXKSA1 IPP147N12N3G-DTE.pdf
IPP147N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 14.7mΩ
Gate-source voltage: ±20V
Drain current: 56A
Power dissipation: 107W
Drain-source voltage: 120V
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
39+1.83 EUR
Mindestbestellmenge: 38
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IPP114N12N3GXKSA1 IPP114N12N3G-DTE.pdf
IPP114N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 11.4mΩ
Gate-source voltage: ±20V
Drain current: 75A
Power dissipation: 136W
Drain-source voltage: 120V
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
31+2.36 EUR
50+1.5 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IPP072N10N3GXKSA1 IPP072N10N3G-DTE.pdf
IPP072N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
61+1.17 EUR
66+1.09 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4620TRLPBF irfr4620pbf.pdf
IRFR4620TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
38+1.93 EUR
45+1.62 EUR
51+1.42 EUR
100+1.29 EUR
250+1.12 EUR
500+1.03 EUR
1000+0.96 EUR
1500+0.94 EUR
Mindestbestellmenge: 26
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IR2118PBF ir2117.pdf
IR2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: DIP8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
Produkt ist nicht verfügbar
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BCP55H6327XTSA1 BCP55H6327XTSA1.pdf
BCP55H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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BGT24LTR11N16E6327XTSA1 BGT24LTR11.pdf
BGT24LTR11N16E6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Case: TSNP16
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.2...3.4V DC
DC supply current: 45mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 10dB
Produkt ist nicht verfügbar
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BCR135SH6327 bcr135.pdf
BCR135SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
414+0.17 EUR
642+0.11 EUR
807+0.089 EUR
1000+0.087 EUR
Mindestbestellmenge: 414
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ICE3A1065ELJFKLA1 Datasheet_ICE3A1065ELJ_v20_2Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011c93b934c0056d
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 650V; 100kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Breakdown voltage: 650V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.93 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
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