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IRF6894MTRPBF IRF6894MTRPBF INFINEON TECHNOLOGIES irf6894mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 54W
Technology: HEXFET®
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IRF6898MTRPBF IRF6898MTRPBF INFINEON TECHNOLOGIES irf6898mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
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IRF7739L2TRPBF IRF7739L2TRPBF INFINEON TECHNOLOGIES irf7739l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
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IRF7779L2TRPBF IRF7779L2TRPBF INFINEON TECHNOLOGIES irf7779l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
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IRF7946TRPBF IRF7946TRPBF INFINEON TECHNOLOGIES IRF7946TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 96W
Technology: HEXFET®
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IRF6645TRPBF IRF6645TRPBF INFINEON TECHNOLOGIES irf6645pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
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IRF6641TRPBF IRF6641TRPBF INFINEON TECHNOLOGIES irf6641pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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IRF7748L1TRPBF IRF7748L1TRPBF INFINEON TECHNOLOGIES IRF7748L1TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 28A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.7mΩ
Power dissipation: 3.3W
Technology: HEXFET®
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AUIRF7665S2TR AUIRF7665S2TR INFINEON TECHNOLOGIES auirf7665s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
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BTS50080-1TEA BTS50080-1TEA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF530CCC8920745&compId=BTS500801TEA.pdf?ci_sign=8180324bf2579b770ec16da1ab15a35b2d277daf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Supply voltage: 5.5...30V DC
On-state resistance: 16mΩ
Output voltage: 39V
Output current: 10A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.98 EUR
32+2.26 EUR
34+2.13 EUR
Mindestbestellmenge: 15
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BTS500251TEAAUMA1 INFINEON TECHNOLOGIES Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
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IPD053N06NATMA1 IPD053N06NATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698E669ECC2211C&compId=IPD053N06N-DTE.pdf?ci_sign=c387f26976ad22f24751fba530dfc2fd71aed62d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
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BSR316PH6327XTSA1 BSR316PH6327XTSA1 INFINEON TECHNOLOGIES BSR316PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
auf Bestellung 1180 Stücke:
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107+0.67 EUR
169+0.42 EUR
260+0.28 EUR
275+0.26 EUR
1000+0.25 EUR
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CY7C4041KV13-667FCXC INFINEON TECHNOLOGIES Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
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IDP15E65D2XKSA1 IDP15E65D2XKSA1 INFINEON TECHNOLOGIES IDP15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
auf Bestellung 150 Stücke:
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31+2.33 EUR
73+0.99 EUR
77+0.93 EUR
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IDP15E65D1XKSA1 IDP15E65D1XKSA1 INFINEON TECHNOLOGIES IDP15E65D1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
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BFR360FH6327XTSA1 BFR360FH6327XTSA1 INFINEON TECHNOLOGIES BFR360F.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 0.21W
Case: TSFP-3
Kind of package: reel; tape
Frequency: 14GHz
Mounting: SMD
Current gain: 90...160
Collector-emitter voltage: 6V
Collector current: 35mA
auf Bestellung 2972 Stücke:
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139+0.51 EUR
232+0.31 EUR
336+0.21 EUR
391+0.18 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 139
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S25FL128SAGNFV001 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
45+1.62 EUR
50+1.43 EUR
Mindestbestellmenge: 41
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ITS5215L ITS5215L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698B3D160A98469&compId=ITS5215L.pdf?ci_sign=c29e04078cac09645894d0116ce0724b692e413a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
On-state resistance: 70mΩ
Output current: 3.7A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
auf Bestellung 869 Stücke:
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22+3.30 EUR
25+2.95 EUR
32+2.26 EUR
34+2.14 EUR
250+2.07 EUR
Mindestbestellmenge: 22
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IDW15E65D2FKSA1 IDW15E65D2FKSA1 INFINEON TECHNOLOGIES IDW15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
auf Bestellung 7 Stücke:
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7+10.21 EUR
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IDV15E65D2XKSA1 IDV15E65D2XKSA1 INFINEON TECHNOLOGIES IDV15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220FP-2
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
56+1.29 EUR
80+0.90 EUR
84+0.86 EUR
Mindestbestellmenge: 53
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IR2011PBF IR2011PBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
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IRF7420TRPBF IRF7420TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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XMC4800F144F1024AAXQMA1 XMC4800F144F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
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XMC4800F100F1024AAXQMA1 XMC4800F100F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 75
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
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XMC4800E196F1024AAXQMA1 XMC4800E196F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
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IPW60R330P6FKSA1 IPW60R330P6FKSA1 INFINEON TECHNOLOGIES IPW60R330P6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 7.6A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Gate charge: 22nC
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
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IPA60R330P6XKSA1 IPA60R330P6XKSA1 INFINEON TECHNOLOGIES IPA60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
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BSZ123N08NS3GATMA1 BSZ123N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E449F0943811C&compId=BSZ123N08NS3G-DTE.pdf?ci_sign=3c3f5976f273d1c142310ae9d70a9357326ae452 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 40A
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TLE7250VSJXUMA1 TLE7250VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE6173550792259&compId=TLE7250V.pdf?ci_sign=5318c72f3b3a8a32a168011b3ffa7f06c26ac0aa Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7251VSJXUMA1 TLE7251VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5C83B113AA259&compId=TLE7251V.pdf?ci_sign=6c135a20cec3e8d56ad544eb4ddfc054300b9a72 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2E1B1C506EA14&compId=TLE7257.pdf?ci_sign=2ddfec743c1f2fd230310522ebad0f66ab6ceb81 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
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TLE7268SKXUMA1 TLE7268SKXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
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TLE7250SJXUMA1 TLE7250SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE60134B0678259&compId=TLE7250.pdf?ci_sign=f59479f7b4ec512bd12903b7d6900dfed7d45d75 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
Produkt ist nicht verfügbar
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TLE7250XSJXUMA1 TLE7250XSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE628A2EAFB8259&compId=TLE7250X.pdf?ci_sign=006d109d5c4db5292b80916d7b6e35b9099f9c8a Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
Produkt ist nicht verfügbar
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TLE7258DXUMA1 TLE7258DXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2BB0A8349AA14&compId=TLE7258D.pdf?ci_sign=5a9629aac6deb0bd4bee617b0a5ad7dd08881e4f Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
Produkt ist nicht verfügbar
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TLE7268LCXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Produkt ist nicht verfügbar
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FM24CL16B-DG INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24CL16B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TT251N16KOFHPSA1 TT251N16KOFHPSA1 INFINEON TECHNOLOGIES TT251N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Max. off-state voltage: 1.6kV
Load current: 251A
Semiconductor structure: double series
Max. forward impulse current: 9.1kA
Case: BG-PB50-1
Max. forward voltage: 1.4V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Gate current: 300mA
auf Bestellung 3 Stücke:
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1+263.13 EUR
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TT250N18KOFHPSA1 TT250N18KOFHPSA1 INFINEON TECHNOLOGIES TT250N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
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IRFR3910TRLPBF IRFR3910TRLPBF INFINEON TECHNOLOGIES irfr3910pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 25.2W
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Operating temperature: -40...125°C
Voltage class: 600V
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
6+14.26 EUR
7+10.22 EUR
Mindestbestellmenge: 6
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CY62136EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
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CY62136EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136FV30LL-45BVXIT INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
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CY62136FV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
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IRFH8307TRPBF IRFH8307TRPBF INFINEON TECHNOLOGIES IRFH8307TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8303TRPBF IRFH8303TRPBF INFINEON TECHNOLOGIES IRFH8303TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8321TRPBF IRFH8321TRPBF INFINEON TECHNOLOGIES IRFH8321TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.4W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFH8325TRPBF IRFH8325TRPBF INFINEON TECHNOLOGIES irfh8325pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
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IHW30N135R3FKSA1 IHW30N135R3FKSA1 INFINEON TECHNOLOGIES DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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BAS3010A03WE6327HTSA1 BAS3010A03WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF4AFAA84D4469&compId=BAS3010A03WE6327HT.pdf?ci_sign=4f99da10d7fca7b937a3b709418a4250a6e2bdef Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
230+0.31 EUR
309+0.23 EUR
353+0.20 EUR
396+0.19 EUR
Mindestbestellmenge: 167
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BAT1804E6327HTSA1 BAT1804E6327HTSA1 INFINEON TECHNOLOGIES BAT18.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E48AE7C69A11C&compId=BSZ130N03MSG-DTE.pdf?ci_sign=f9ca3856ae6190f72d64bb628930d1076a5f9175 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB029N06N3GATMA1 IPB029N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DB4723ACC11C&compId=IPB029N06N3G-DTE.pdf?ci_sign=5f066976eb9802fc0a5a6395d77568296435c78e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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IRFS4310ZTRLPBF IRFS4310ZTRLPBF INFINEON TECHNOLOGIES irfb4310zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2128SPBF IR2128SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.27 EUR
32+2.29 EUR
33+2.17 EUR
Mindestbestellmenge: 22
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IRFR3607TRPBF IRFR3607TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C30289CA55F1A303005056AB0C4F&compId=irfr3607pbf.pdf?ci_sign=c768d620ee5343d069fa0755a84c6ac97a7b6a80 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TT320N18SOF TT320N18SOF INFINEON TECHNOLOGIES TT320N18SOF_TD320N18SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
auf Bestellung 2 Stücke:
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1+126.41 EUR
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IRF6894MTRPBF irf6894mpbf.pdf
IRF6894MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 54W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6898MTRPBF irf6898mpbf.pdf
IRF6898MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7739L2TRPBF irf7739l2pbf.pdf
IRF7739L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7779L2TRPBF irf7779l2pbf.pdf
IRF7779L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7946TRPBF IRF7946TRPBF.pdf
IRF7946TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 96W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6645TRPBF irf6645pbf.pdf
IRF6645TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6641TRPBF irf6641pbf.pdf
IRF6641TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7748L1TRPBF IRF7748L1TRPBF.pdf
IRF7748L1TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 28A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.7mΩ
Power dissipation: 3.3W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7665S2TR auirf7665s2.pdf
AUIRF7665S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
Produkt ist nicht verfügbar
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BTS50080-1TEA pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF530CCC8920745&compId=BTS500801TEA.pdf?ci_sign=8180324bf2579b770ec16da1ab15a35b2d277daf
BTS50080-1TEA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Supply voltage: 5.5...30V DC
On-state resistance: 16mΩ
Output voltage: 39V
Output current: 10A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.98 EUR
32+2.26 EUR
34+2.13 EUR
Mindestbestellmenge: 15
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BTS500251TEAAUMA1 Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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IPD053N06NATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698E669ECC2211C&compId=IPD053N06N-DTE.pdf?ci_sign=c387f26976ad22f24751fba530dfc2fd71aed62d
IPD053N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSR316PH6327XTSA1 BSR316PH6327XTSA1.pdf
BSR316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
auf Bestellung 1180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
169+0.42 EUR
260+0.28 EUR
275+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 107
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CY7C4041KV13-667FCXC Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
Produkt ist nicht verfügbar
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IDP15E65D2XKSA1 IDP15E65D2.pdf
IDP15E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 31
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IDP15E65D1XKSA1 IDP15E65D1.pdf
IDP15E65D1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
Produkt ist nicht verfügbar
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BFR360FH6327XTSA1 BFR360F.pdf
BFR360FH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 0.21W
Case: TSFP-3
Kind of package: reel; tape
Frequency: 14GHz
Mounting: SMD
Current gain: 90...160
Collector-emitter voltage: 6V
Collector current: 35mA
auf Bestellung 2972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
232+0.31 EUR
336+0.21 EUR
391+0.18 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 139
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S25FL128SAGNFV001 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
45+1.62 EUR
50+1.43 EUR
Mindestbestellmenge: 41
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ITS5215L pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698B3D160A98469&compId=ITS5215L.pdf?ci_sign=c29e04078cac09645894d0116ce0724b692e413a
ITS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
On-state resistance: 70mΩ
Output current: 3.7A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
auf Bestellung 869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.30 EUR
25+2.95 EUR
32+2.26 EUR
34+2.14 EUR
250+2.07 EUR
Mindestbestellmenge: 22
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IDW15E65D2FKSA1 IDW15E65D2.pdf
IDW15E65D2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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IDV15E65D2XKSA1 IDV15E65D2.pdf
IDV15E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220FP-2
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
56+1.29 EUR
80+0.90 EUR
84+0.86 EUR
Mindestbestellmenge: 53
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IR2011PBF description IR2011SPBF.pdf
IR2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
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IRF7420TRPBF pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5
IRF7420TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC4800F144F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F144F1024AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Produkt ist nicht verfügbar
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XMC4800F100F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F100F1024AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 75
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Produkt ist nicht verfügbar
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XMC4800E196F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196F1024AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Produkt ist nicht verfügbar
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IPW60R330P6FKSA1 IPW60R330P6.pdf
IPW60R330P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 7.6A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Gate charge: 22nC
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPA60R330P6XKSA1 IPA60R330P6-DTE.pdf
IPA60R330P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSZ123N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E449F0943811C&compId=BSZ123N08NS3G-DTE.pdf?ci_sign=3c3f5976f273d1c142310ae9d70a9357326ae452
BSZ123N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7250VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE6173550792259&compId=TLE7250V.pdf?ci_sign=5318c72f3b3a8a32a168011b3ffa7f06c26ac0aa
TLE7250VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
Produkt ist nicht verfügbar
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TLE7251VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5C83B113AA259&compId=TLE7251V.pdf?ci_sign=6c135a20cec3e8d56ad544eb4ddfc054300b9a72
TLE7251VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
Produkt ist nicht verfügbar
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TLE7257SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2E1B1C506EA14&compId=TLE7257.pdf?ci_sign=2ddfec743c1f2fd230310522ebad0f66ab6ceb81
TLE7257SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
Produkt ist nicht verfügbar
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TLE7268SKXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463
TLE7268SKXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Produkt ist nicht verfügbar
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TLE7250SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE60134B0678259&compId=TLE7250.pdf?ci_sign=f59479f7b4ec512bd12903b7d6900dfed7d45d75
TLE7250SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
Produkt ist nicht verfügbar
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TLE7250XSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE628A2EAFB8259&compId=TLE7250X.pdf?ci_sign=006d109d5c4db5292b80916d7b6e35b9099f9c8a
TLE7250XSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
Produkt ist nicht verfügbar
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TLE7258DXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2BB0A8349AA14&compId=TLE7258D.pdf?ci_sign=5a9629aac6deb0bd4bee617b0a5ad7dd08881e4f
TLE7258DXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7268LCXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Produkt ist nicht verfügbar
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FM24CL16B-DG Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TT251N16KOFHPSA1 TT251N18KOF.pdf
TT251N16KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Max. off-state voltage: 1.6kV
Load current: 251A
Semiconductor structure: double series
Max. forward impulse current: 9.1kA
Case: BG-PB50-1
Max. forward voltage: 1.4V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Gate current: 300mA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+263.13 EUR
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TT250N18KOFHPSA1 TT250N18KOF.pdf
TT250N18KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+260.26 EUR
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IRFR3910TRLPBF irfr3910pbf.pdf
IRFR3910TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKCM15H60GAXKMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0
IKCM15H60GAXKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Power dissipation: 25.2W
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Topology: IGBT three-phase bridge; thermistor
Operating temperature: -40...125°C
Voltage class: 600V
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.26 EUR
7+10.22 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
CY62136EV30LL-45BVXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
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CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
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CY62136FV30LL-45BVXIT
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62136FV30LL-45ZSXIT Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
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IRFH8307TRPBF IRFH8307TRPBF.pdf
IRFH8307TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8303TRPBF IRFH8303TRPBF.pdf
IRFH8303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8321TRPBF IRFH8321TRPBF.pdf
IRFH8321TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.4W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFH8325TRPBF irfh8325pbf.pdf
IRFH8325TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
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IHW30N135R3FKSA1 DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88
IHW30N135R3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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BAS3010A03WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF4AFAA84D4469&compId=BAS3010A03WE6327HT.pdf?ci_sign=4f99da10d7fca7b937a3b709418a4250a6e2bdef
BAS3010A03WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
230+0.31 EUR
309+0.23 EUR
353+0.20 EUR
396+0.19 EUR
Mindestbestellmenge: 167
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BAT1804E6327HTSA1 BAT18.pdf
BAT1804E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSZ130N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E48AE7C69A11C&compId=BSZ130N03MSG-DTE.pdf?ci_sign=f9ca3856ae6190f72d64bb628930d1076a5f9175
BSZ130N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB029N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DB4723ACC11C&compId=IPB029N06N3G-DTE.pdf?ci_sign=5f066976eb9802fc0a5a6395d77568296435c78e
IPB029N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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IRFS4310ZTRLPBF irfb4310zpbf.pdf
IRFS4310ZTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2128SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3
IR2128SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
32+2.29 EUR
33+2.17 EUR
Mindestbestellmenge: 22
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IRFR3607TRPBF pVersion=0046&contRep=ZT&docId=E221C30289CA55F1A303005056AB0C4F&compId=irfr3607pbf.pdf?ci_sign=c768d620ee5343d069fa0755a84c6ac97a7b6a80
IRFR3607TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TT320N18SOF TT320N18SOF_TD320N18SOF.pdf
TT320N18SOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+126.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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