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BSR315PH6327XTSA1 BSR315PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB57E0F870745&compId=BSR315PH6327XTSA1.pdf?ci_sign=ae348073efcde58782a96f46a5f058d78900eb40 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
134+0.54 EUR
187+0.38 EUR
216+0.33 EUR
261+0.27 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 91
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ICE5QR0680AZXKLA1
+2
 		ICE5QR0680AZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.8A; 20kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Mounting: THT
Power: 74/41W
Operating temperature: -40...150°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Number of channels: 1
Output current: 1.8A
Operating voltage: 10...25.5V DC
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 20kHz
Case: DIP7
Topology: flyback
auf Bestellung 23 Stücke:
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16+4.68 EUR
18+4.2 EUR
23+3.1 EUR
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IAUT300N08S5N014ATMA1 IAUT300N08S5N014ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA1AC5C6B718BF&compId=IAUT300N08S5N014.pdf?ci_sign=35d127234facff5564339e4e770b89015b375a19 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BAT1502ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 45000 Stücke:
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15000+0.34 EUR
Mindestbestellmenge: 15000
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BAT15099E6433HTMA1 INFINEON TECHNOLOGIES INFNS15420-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.31 EUR
Mindestbestellmenge: 10000
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IR2301STRPBF INFINEON TECHNOLOGIES ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 2; MOSFET; 5÷20V
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 2
Supply voltage: 5...20V
Output current: 0.2A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.1 EUR
Mindestbestellmenge: 2500
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BAS116E6327HTSA1 BAS116E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2B7A6EC270469&compId=BAS116E6327.pdf?ci_sign=da85b30432eb7633a403c2115188b9581afb3d70 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
500+0.14 EUR
622+0.11 EUR
873+0.082 EUR
Mindestbestellmenge: 358
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IR2117STRPBF INFINEON TECHNOLOGIES ir2117.pdf?fileId=5546d462533600a4015355c84331168d description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.2A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
Voltage class: 600V
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.37 EUR
Mindestbestellmenge: 2500
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IPT60R065S7XTMA1 IPT60R065S7XTMA1 INFINEON TECHNOLOGIES Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL1004PBF IRL1004PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22272857E83FCF1A303005056AB0C4F&compId=irl1004pbf.pdf?ci_sign=4e8d332baa7305d76f5c9fd9c87a674c93757251 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 200W
Features of semiconductor devices: logic level
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.39 EUR
35+2.1 EUR
37+1.97 EUR
38+1.89 EUR
40+1.8 EUR
50+1.67 EUR
100+1.57 EUR
Mindestbestellmenge: 30
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SMBT2907AE6327HTSA1 SMBT2907AE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7F97A7DE8E469&compId=SMBT2907AE6327.pdf?ci_sign=d66de9baddcb10f752cb30276c6a16f9d05328da Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
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BAR6405E6327HTSA1 INFINEON TECHNOLOGIES Infineon-BAR64-05-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f026ce63904 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC59; 250mW
Semiconductor structure: common cathode
Case: SC59
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.075 EUR
Mindestbestellmenge: 3000
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S29GL01GT10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GT10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GT10TFI020 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GT10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI020 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI023 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI040 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI043 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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IRFP4868PBF IRFP4868PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE900C419F5EA&compId=IRFP4868PBF.pdf?ci_sign=ffb090ca678853ce73ce3547e98b6c3affefd6bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
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IRFP4768PBFXKMA1 IRFP4768PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.86 EUR
20+3.63 EUR
25+3.3 EUR
100+2.9 EUR
Mindestbestellmenge: 15
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IRF7855TRPBF IRF7855TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221ACE545C2EEF1A303005056AB0C4F&compId=irf7855pbf.pdf?ci_sign=b22b7175e73c8569212aaa050adf69f108f47aab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R180P7SXKSA1 IPA60R180P7SXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD8113AB477520C7&compId=IPA60R180P7S.pdf?ci_sign=d8222d4a5b6ce829d39dbad5c90c25d3abcbc850 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Gate charge: 25nC
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.1 EUR
Mindestbestellmenge: 34
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IPD60R180P7SE8228AUMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 18A; 72W; DPAK; SMT
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Gate charge: 25nC
Drain current: 18A
Power dissipation: 72W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.6 EUR
Mindestbestellmenge: 2500
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IR2108STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 350mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.35A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.89 EUR
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IR4426STRPBF INFINEON TECHNOLOGIES ir4426.pdf?fileId=5546d462533600a4015355d60b491822 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 6÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 6...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.99 EUR
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IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC84EE95CCE11C&compId=IPP320N20N3G-DTE.pdf?ci_sign=6226e0663d65b677fe140d569ad33b01df4f9379 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 29 Stücke:
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IRFB3806PBF IRFB3806PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6F7F1A6F5005056AB5A8F&compId=irfs3806pbf.pdf?ci_sign=001141132864e0f86f836b25cf437c6712ebd811 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
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64+1.12 EUR
77+0.93 EUR
100+0.86 EUR
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BGA616H6327XTSA1 INFINEON TECHNOLOGIES BGA616_Rev2011.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.93 EUR
Mindestbestellmenge: 3000
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IPP200N15N3GXKSA1 IPP200N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC83BDC316811C&compId=IPP200N15N3G-DTE.pdf?ci_sign=38cb5325374ca3da97dcbd9df290e4f9562e6e8f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPW20N60CFDFKSA1 INFINEON TECHNOLOGIES SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
auf Bestellung 422 Stücke:
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30+4.58 EUR
120+4.12 EUR
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IRS2181STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.47 EUR
Mindestbestellmenge: 2500
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IPD50N06S214ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 50A; 136W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 172500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.87 EUR
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IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES IPP030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.26 EUR
21+3.42 EUR
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IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAEAD4954FC11C&compId=IPI030N10N3G-DTE.pdf?ci_sign=5d8688e08bb3c486249e6a18fad4ec33e798e3b4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO262-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 3mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Drain current: 100A
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUZ30N10S5L240ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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ITS4140N ITS4140N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB94E69C404469&compId=ITS4140N.pdf?ci_sign=acda9a4625f19354e009b9e1b34db3fb185be71e Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 3357 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
48+1.5 EUR
55+1.32 EUR
100+1.2 EUR
500+1.13 EUR
Mindestbestellmenge: 44
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IRS23364DJPBF IRS23364DJPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Number of channels: 6
Supply voltage: 11.5...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IRS2336DMTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: MLPQ34
Output current: -0.35...0.2A
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Power: 2W
Voltage class: 600V
Kind of package: reel; tape
Turn-off time: 580ns
Turn-on time: 655ns
Produkt ist nicht verfügbar
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IRS2336DSTRPBF INFINEON TECHNOLOGIES Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 200mA; Ch: 6; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC28
Output current: 0.2A
Number of channels: 6
Integrated circuit features: MOSFET
Mounting: SMD
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.97 EUR
Mindestbestellmenge: 1000
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IRF9952TRPBF IRF9952TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B1D8E6A7C1F1A303005056AB0C4F&compId=irf9952pbf.pdf?ci_sign=7b8000ddc0fc92d5659fca7da6e6c1d909d075b5 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD082N10N3GATMA1 IPD082N10N3GATMA1 INFINEON TECHNOLOGIES IPD082N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
65+1.1 EUR
100+0.94 EUR
250+0.89 EUR
500+0.84 EUR
Mindestbestellmenge: 51
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SN7002NH6327XTSA2 SN7002NH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A84ED23234910B&compId=SN7002NH6327XTSA2.pdf?ci_sign=d6285ac03f0bea3b7779feaacb4ca2f8607ef04b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
404+0.18 EUR
585+0.12 EUR
688+0.1 EUR
983+0.073 EUR
1132+0.063 EUR
3000+0.051 EUR
6000+0.046 EUR
9000+0.043 EUR
Mindestbestellmenge: 278
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TLE75602ESDXUMA1 INFINEON TECHNOLOGIES Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.89 EUR
Mindestbestellmenge: 3000
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IPB039N10N3GATMA1 IPB039N10N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB6625D5AA11C&compId=IPB039N10N3G-DTE.pdf?ci_sign=c1734f346b1519c8fdd37045c17c2fdcbb199a8b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSS159NH6327XTSA2 BSS159NH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77ADCA613611C&compId=BSS159NH6327XTSA2.pdf?ci_sign=a1987899b02136e077038fc3e5ada84cd40cf250 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 8Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: depletion
Case: SOT23
auf Bestellung 1043 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
202+0.35 EUR
257+0.28 EUR
309+0.23 EUR
368+0.19 EUR
447+0.16 EUR
Mindestbestellmenge: 139
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FS100R12W2T7B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: EasyPACK™ 2B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 100A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Case: AG-EASY2B-2
Produkt ist nicht verfügbar
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IRFS52N15DTRRP IRFS52N15DTRRP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF4842F86155EA&compId=IRFS52N15DTRRP.pdf?ci_sign=ebc254e558cc0929f63fa9dc13b00da8547b2f4d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TLE5028CXGAD28HAMA1 INFINEON TECHNOLOGIES Category: Unclassified
Description: TLE5028CXGAD28HAMA1
auf Bestellung 13500 Stücke:
Lieferzeit 14-21 Tag (e)
1500+4.09 EUR
Mindestbestellmenge: 1500
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BSR202NL6327HTSA1 BSR202NL6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7758B7BEB910B&compId=BSR202NL6327HTSA1.pdf?ci_sign=55845be12c367b8471e90a3bdc2297c96057b3b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Case: SC59
Produkt ist nicht verfügbar
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BTS134D BTS134D INFINEON TECHNOLOGIES BTS134D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.63 EUR
30+2.4 EUR
33+2.19 EUR
Mindestbestellmenge: 20
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IPB019N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 166A; 250W; D2PAK,TO263; SMT
Case: D2PAK; TO263
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Gate charge: 124nC
On-state resistance: 1.95mΩ
Power dissipation: 250W
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.99 EUR
Mindestbestellmenge: 800
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1EDS5663HXUMA1 1EDS5663HXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Type of integrated circuit: driver
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA33ABC275D4143&compId=IPB100N06S2L05.pdf?ci_sign=ed9a21125ac2c67384789464ad8f62978609982b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB100N06S205ATMA4 IPB100N06S205ATMA4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA32C6912322143&compId=IPB100N06S205.pdf?ci_sign=cd8570fdde39d441592cb3a22ab9f2932d43b8c5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPP052N06L3GXKSA1 IPP052N06L3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98E023A9B411C&compId=IPP052N06L3G-DTE.pdf?ci_sign=8a5b95f3a4bf719a2bed0f802edb055a4b86c61e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
45+1.62 EUR
62+1.16 EUR
65+1.1 EUR
Mindestbestellmenge: 30
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BSR315PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB57E0F870745&compId=BSR315PH6327XTSA1.pdf?ci_sign=ae348073efcde58782a96f46a5f058d78900eb40
BSR315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
134+0.54 EUR
187+0.38 EUR
216+0.33 EUR
261+0.27 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 91
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ICE5QR0680AZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124
ICE5QR0680AZXKLA1
+2
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.8A; 20kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Mounting: THT
Power: 74/41W
Operating temperature: -40...150°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Number of channels: 1
Output current: 1.8A
Operating voltage: 10...25.5V DC
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 20kHz
Case: DIP7
Topology: flyback
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.68 EUR
18+4.2 EUR
23+3.1 EUR
Mindestbestellmenge: 16
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IAUT300N08S5N014ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA1AC5C6B718BF&compId=IAUT300N08S5N014.pdf?ci_sign=35d127234facff5564339e4e770b89015b375a19
IAUT300N08S5N014ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BAT1502ELE6327XTMA1 Infineon-BAT15-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895df9e4e74
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.34 EUR
Mindestbestellmenge: 15000
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BAT15099E6433HTMA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.31 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
IR2301STRPBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 2; MOSFET; 5÷20V
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 2
Supply voltage: 5...20V
Output current: 0.2A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.1 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BAS116E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2B7A6EC270469&compId=BAS116E6327.pdf?ci_sign=da85b30432eb7633a403c2115188b9581afb3d70
BAS116E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
500+0.14 EUR
622+0.11 EUR
873+0.082 EUR
Mindestbestellmenge: 358
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IR2117STRPBF description ir2117.pdf?fileId=5546d462533600a4015355c84331168d
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.2A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
Voltage class: 600V
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.37 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL1004PBF pVersion=0046&contRep=ZT&docId=E22272857E83FCF1A303005056AB0C4F&compId=irl1004pbf.pdf?ci_sign=4e8d332baa7305d76f5c9fd9c87a674c93757251
IRL1004PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 200W
Features of semiconductor devices: logic level
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
35+2.1 EUR
37+1.97 EUR
38+1.89 EUR
40+1.8 EUR
50+1.67 EUR
100+1.57 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
SMBT2907AE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7F97A7DE8E469&compId=SMBT2907AE6327.pdf?ci_sign=d66de9baddcb10f752cb30276c6a16f9d05328da
SMBT2907AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAR6405E6327HTSA1 Infineon-BAR64-05-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f026ce63904
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC59; 250mW
Semiconductor structure: common cathode
Case: SC59
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.075 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI040 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI043 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4868PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE900C419F5EA&compId=IRFP4868PBF.pdf?ci_sign=ffb090ca678853ce73ce3547e98b6c3affefd6bd
IRFP4868PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4768PBFXKMA1 Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021
IRFP4768PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
20+3.63 EUR
25+3.3 EUR
100+2.9 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRF7855TRPBF pVersion=0046&contRep=ZT&docId=E221ACE545C2EEF1A303005056AB0C4F&compId=irf7855pbf.pdf?ci_sign=b22b7175e73c8569212aaa050adf69f108f47aab
IRF7855TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R180P7SXKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD8113AB477520C7&compId=IPA60R180P7S.pdf?ci_sign=d8222d4a5b6ce829d39dbad5c90c25d3abcbc850
IPA60R180P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Gate charge: 25nC
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.1 EUR
Mindestbestellmenge: 34
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IPD60R180P7SE8228AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 18A; 72W; DPAK; SMT
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Gate charge: 25nC
Drain current: 18A
Power dissipation: 72W
Gate-source voltage: 20V
Technology: MOSFET
Drain-source voltage: 600V
Case: DPAK
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.6 EUR
Mindestbestellmenge: 2500
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IR2108STRPBF description ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 350mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.35A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.89 EUR
Mindestbestellmenge: 2500
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IR4426STRPBF ir4426.pdf?fileId=5546d462533600a4015355d60b491822
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 6÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 6...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.99 EUR
Mindestbestellmenge: 2500
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IPP320N20N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC84EE95CCE11C&compId=IPP320N20N3G-DTE.pdf?ci_sign=6226e0663d65b677fe140d569ad33b01df4f9379
IPP320N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
Mindestbestellmenge: 24
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IRFB3806PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6F7F1A6F5005056AB5A8F&compId=irfs3806pbf.pdf?ci_sign=001141132864e0f86f836b25cf437c6712ebd811
IRFB3806PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
64+1.12 EUR
77+0.93 EUR
100+0.86 EUR
Mindestbestellmenge: 44
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BGA616H6327XTSA1 BGA616_Rev2011.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: operational amplifier
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.93 EUR
Mindestbestellmenge: 3000
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IPP200N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC83BDC316811C&compId=IPP200N15N3G-DTE.pdf?ci_sign=38cb5325374ca3da97dcbd9df290e4f9562e6e8f
IPP200N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPW20N60CFDFKSA1 SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
auf Bestellung 422 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+4.58 EUR
120+4.12 EUR
Mindestbestellmenge: 30
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IRS2181STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.47 EUR
Mindestbestellmenge: 2500
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IPD50N06S214ATMA2 Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 50A; 136W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 172500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.87 EUR
Mindestbestellmenge: 2500
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IPP030N10N3GXKSA1 IPP030N10N3G-DTE.pdf
IPP030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
21+3.42 EUR
Mindestbestellmenge: 17
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IPI030N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAEAD4954FC11C&compId=IPI030N10N3G-DTE.pdf?ci_sign=5d8688e08bb3c486249e6a18fad4ec33e798e3b4
IPI030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO262-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 3mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Drain current: 100A
Drain-source voltage: 100V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUZ30N10S5L240ATMA1 Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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ITS4140N pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB94E69C404469&compId=ITS4140N.pdf?ci_sign=acda9a4625f19354e009b9e1b34db3fb185be71e
ITS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 3357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
48+1.5 EUR
55+1.32 EUR
100+1.2 EUR
500+1.13 EUR
Mindestbestellmenge: 44
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IRS23364DJPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086
IRS23364DJPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Number of channels: 6
Supply voltage: 11.5...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IRS2336DMTRPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: MLPQ34
Output current: -0.35...0.2A
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Power: 2W
Voltage class: 600V
Kind of package: reel; tape
Turn-off time: 580ns
Turn-on time: 655ns
Produkt ist nicht verfügbar
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IRS2336DSTRPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 200mA; Ch: 6; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC28
Output current: 0.2A
Number of channels: 6
Integrated circuit features: MOSFET
Mounting: SMD
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.97 EUR
Mindestbestellmenge: 1000
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IRF9952TRPBF pVersion=0046&contRep=ZT&docId=E221B1D8E6A7C1F1A303005056AB0C4F&compId=irf9952pbf.pdf?ci_sign=7b8000ddc0fc92d5659fca7da6e6c1d909d075b5
IRF9952TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD082N10N3GATMA1 IPD082N10N3G-DTE.pdf
IPD082N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
65+1.1 EUR
100+0.94 EUR
250+0.89 EUR
500+0.84 EUR
Mindestbestellmenge: 51
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SN7002NH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A84ED23234910B&compId=SN7002NH6327XTSA2.pdf?ci_sign=d6285ac03f0bea3b7779feaacb4ca2f8607ef04b
SN7002NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
404+0.18 EUR
585+0.12 EUR
688+0.1 EUR
983+0.073 EUR
1132+0.063 EUR
3000+0.051 EUR
6000+0.046 EUR
9000+0.043 EUR
Mindestbestellmenge: 278
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TLE75602ESDXUMA1 Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.89 EUR
Mindestbestellmenge: 3000
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IPB039N10N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB6625D5AA11C&compId=IPB039N10N3G-DTE.pdf?ci_sign=c1734f346b1519c8fdd37045c17c2fdcbb199a8b
IPB039N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSS159NH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77ADCA613611C&compId=BSS159NH6327XTSA2.pdf?ci_sign=a1987899b02136e077038fc3e5ada84cd40cf250
BSS159NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 8Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: depletion
Case: SOT23
auf Bestellung 1043 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
202+0.35 EUR
257+0.28 EUR
309+0.23 EUR
368+0.19 EUR
447+0.16 EUR
Mindestbestellmenge: 139
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FS100R12W2T7B11BOMA1 Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: EasyPACK™ 2B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 100A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Case: AG-EASY2B-2
Produkt ist nicht verfügbar
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IRFS52N15DTRRP pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF4842F86155EA&compId=IRFS52N15DTRRP.pdf?ci_sign=ebc254e558cc0929f63fa9dc13b00da8547b2f4d
IRFS52N15DTRRP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE5028CXGAD28HAMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: TLE5028CXGAD28HAMA1
auf Bestellung 13500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+4.09 EUR
Mindestbestellmenge: 1500
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BSR202NL6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7758B7BEB910B&compId=BSR202NL6327HTSA1.pdf?ci_sign=55845be12c367b8471e90a3bdc2297c96057b3b9
BSR202NL6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Case: SC59
Produkt ist nicht verfügbar
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BTS134D BTS134D.pdf
BTS134D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
30+2.4 EUR
33+2.19 EUR
Mindestbestellmenge: 20
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IPB019N08NF2SATMA1 Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 166A; 250W; D2PAK,TO263; SMT
Case: D2PAK; TO263
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
Gate charge: 124nC
On-state resistance: 1.95mΩ
Power dissipation: 250W
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.99 EUR
Mindestbestellmenge: 800
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1EDS5663HXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b
1EDS5663HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Type of integrated circuit: driver
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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IPB100N06S2L05ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA33ABC275D4143&compId=IPB100N06S2L05.pdf?ci_sign=ed9a21125ac2c67384789464ad8f62978609982b
IPB100N06S2L05ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB100N06S205ATMA4 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA32C6912322143&compId=IPB100N06S205.pdf?ci_sign=cd8570fdde39d441592cb3a22ab9f2932d43b8c5
IPB100N06S205ATMA4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPP052N06L3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98E023A9B411C&compId=IPP052N06L3G-DTE.pdf?ci_sign=8a5b95f3a4bf719a2bed0f802edb055a4b86c61e
IPP052N06L3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
45+1.62 EUR
62+1.16 EUR
65+1.1 EUR
Mindestbestellmenge: 30
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