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BA885E6327 BA885E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999BC51ABD17E27&compId=BAx95-DTE.pdf?ci_sign=2fc9f1d8e133c7a4c3202608515580a89c97324a Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 1201 Stücke:
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1064+0.067 EUR
1087+0.066 EUR
Mindestbestellmenge: 1064
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BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 INFINEON TECHNOLOGIES BSC109N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS7005WH6327XTSA1 BAS7005WH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 2725 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
432+0.17 EUR
625+0.11 EUR
834+0.086 EUR
1000+0.075 EUR
Mindestbestellmenge: 334
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IRF3805PBF IRF3805PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7ADAF1A6F5005056AB5A8F&compId=irf3805.pdf?ci_sign=b1f89a3f622ec38eb379399dfb2e700a67186d8d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
auf Bestellung 71 Stücke:
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21+3.49 EUR
31+2.32 EUR
50+2.07 EUR
Mindestbestellmenge: 21
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IRF3805STRL-7PP IRF3805STRL-7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F628A62DE73F1A303005056AB0C4F&compId=irf3805s-7ppbf.pdf?ci_sign=c4df994e7b162fcc0e0cfd81692e30268d46ac41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3610STRLPBF IRF3610STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDBA92288AC143&compId=IRF3610STRLPBF.pdf?ci_sign=95fdba56d7c40ac1aecdbfbb4c03f02b5478e3e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 TLE7258SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AE5052B3AFC748&compId=TLE7258.pdf?ci_sign=fb47dd87523959ba8ff4c5c2ed4ff13300dd97c8 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
91+0.79 EUR
100+0.72 EUR
115+0.63 EUR
250+0.62 EUR
Mindestbestellmenge: 76
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IPB035N08N3GATMA1 IPB035N08N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB3C44E35211C&compId=IPB035N08N3G-DTE.pdf?ci_sign=21c5de3139bc2864bea66c1d6aed3968809828d3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Produkt ist nicht verfügbar
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BSC105N10LSFGATMA1 BSC105N10LSFGATMA1 INFINEON TECHNOLOGIES BSC105N10LSFG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10.5mΩ
Gate-source voltage: ±20V
Drain current: 90A
Drain-source voltage: 100V
Power dissipation: 156W
Produkt ist nicht verfügbar
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AUIRF4104STRL AUIRF4104STRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D5255F1A6F5005056AB5A8F&compId=auirf4104.pdf?ci_sign=925a57986ee2188c36cc97181d621bea692e9156 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Technology: HEXFET®
Case: D2PAK
Kind of channel: enhancement
Kind of package: reel
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 10mΩ
Power dissipation: 140W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
Produkt ist nicht verfügbar
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S29AL016J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J55FFAR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S29AL016J55TFI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29AL016J55TFIR10 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J55TFIR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 INFINEON TECHNOLOGIES BBY55_SER.pdf Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SC79
Features of semiconductor devices: RF
Capacitance: 5.5...19.6pF
Max. off-state voltage: 16V
Leakage current: 0.1µA
auf Bestellung 1979 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
258+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 228
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TLE6232GPAUMA2 TLE6232GPAUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8942C4BC6A6143&compId=TLE6232GP.pdf?ci_sign=24e0445975d30b12ea03dfdacbe39036b23c1eb4 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Output current: 0.55...1.1A
Technology: FLEX
Number of channels: 6
Kind of output: N-Channel
Turn-on time: 10µs
Turn-off time: 10µs
Produkt ist nicht verfügbar
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TLE6251-2G TLE6251-2G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0BA68F3690A14&compId=TLE6251-2G.pdf?ci_sign=74c5e0fe904ed5d2f66a2c97797acfae64a2d9da Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
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IR2132STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
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IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC4C2806A011C&compId=IPP024N06N3G-DTE.pdf?ci_sign=50db48bc36890d6860fe3ae63f8a687849e4e47e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.23 EUR
14+5.36 EUR
17+4.3 EUR
Mindestbestellmenge: 12
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IPI024N06N3GXKSA1 IPI024N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69966EB25DC411C&compId=IPI024N06N3G-DTE.pdf?ci_sign=af4669f0517a60affc571042607d4f14e1306ced Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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S29AL016J55TFNR10 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J55TFNR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J70BAI010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J70BAI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29AL016J70BFA010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29AL016J70BFA013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S29AL016J70BFA023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S29AL016J70BFI012 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFN010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFN020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70FFI012 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70FFI020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70FFI022 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70FFM020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70TFA020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70TFN010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70TFN013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70TFN020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70TFN023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB054N06N3GATMA1 IPB054N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5EC939E60811C&compId=IPB054N06N3G-DTE.pdf?ci_sign=84f615a05cf8a8d54ec1b710306fbe75a60d1fe9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDM02G120C5XTMA1 IDM02G120C5XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBA3490FE516FA8&compId=IDM02G120C5-DTE.pdf?ci_sign=39f02fd9a145e2170f3e498cb765e81a39c4fb99 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Mounting: SMD
Case: PG-TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1.2µA
Load current: 2A
Power dissipation: 98W
Max. forward voltage: 1.4V
Max. forward impulse current: 31A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N06NSATMA1 BSC014N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25F431FB8811C&compId=BSC014N06NS-DTE.pdf?ci_sign=89be9cef3c84b02cc52bd76782f1cbbbafd2f7d6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT5402VH6327XTSA1 BAT5402VH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.2A; 230mW
Load current: 0.2A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SC79
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
550+0.13 EUR
767+0.093 EUR
918+0.078 EUR
1169+0.061 EUR
1334+0.054 EUR
Mindestbestellmenge: 455
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AUIRFR8405TRL INFINEON TECHNOLOGIES INFN-S-A0008053586-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Produkt ist nicht verfügbar
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AUIRFB8407 AUIRFB8407 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBEF63752B5EA&compId=AUIRFB8407.pdf?ci_sign=77c7432b80b269846f5e47385d4aa9b20e3cd3ad Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFSL8407 AUIRFSL8407 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBE382C02195EA&compId=AUIRFSL8407.pdf?ci_sign=4c0550a9897f895e27738a49f082a991e26f4267 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFB8405 AUIRFB8405 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBC936327F5EA&compId=AUIRFB8405.pdf?ci_sign=7b480d6d4381ed9eff5cd4a93dd04a3a2f195ed0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFB8409 AUIRFB8409 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBC0B3419C15EA&compId=AUIRFB8409.pdf?ci_sign=7f12e48652dc15e699fd5e099a6f836db55a2bbf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IR38263MTRPBFAUMA1 INFINEON TECHNOLOGIES IR38263M.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Interface: PMBus; PVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSC110N06NS3GATMA1 BSC110N06NS3GATMA1 INFINEON TECHNOLOGIES BSC110N06NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain current: 50A
Produkt ist nicht verfügbar
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BSC110N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 48A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Pulsed drain current: 304A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9A69886D211C&compId=BSC117N08NS5-DTE.pdf?ci_sign=23efda944c0554f017e600157a0f280e1d331efa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.7mΩ
Drain current: 49A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC118N10NSGATMA1 BSC118N10NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9DCDB846011C&compId=BSC118N10NSG-DTE.pdf?ci_sign=677f6c93c2498a7ba9596957c0f0ef730c263662 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.8mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC123N10LSGATMA1 BSC123N10LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA96CD3C5811C&compId=BSC123N10LSG-DTE.pdf?ci_sign=502e468ba211a3d90ef62890cb82e0b16657e541 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC12DN20NS3GATMA1 BSC12DN20NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6CDBBD7E411C&compId=BSC12DN20NS3G-DTE.pdf?ci_sign=a25373e9ee75a46b52f6339ff91ce7cebfbad060 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 11.3A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC16DN25NS3GATMA1 BSC16DN25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6DE8A553411C&compId=BSC16DN25NS3G-DTE.pdf?ci_sign=da8a4c7c5c75536fe143cf3873658d8ba84f863b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.165Ω
Drain current: 10.9A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 INFINEON TECHNOLOGIES BSC190N12NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 44A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BA885E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999BC51ABD17E27&compId=BAx95-DTE.pdf?ci_sign=2fc9f1d8e133c7a4c3202608515580a89c97324a
BA885E6327
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1064+0.067 EUR
1087+0.066 EUR
Mindestbestellmenge: 1064
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BSC109N10NS3GATMA1 BSC109N10NS3G-DTE.pdf
BSC109N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS7005WH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7005WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 2725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
432+0.17 EUR
625+0.11 EUR
834+0.086 EUR
1000+0.075 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
IRF3805PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7ADAF1A6F5005056AB5A8F&compId=irf3805.pdf?ci_sign=b1f89a3f622ec38eb379399dfb2e700a67186d8d
IRF3805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
31+2.32 EUR
50+2.07 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRF3805STRL-7PP pVersion=0046&contRep=ZT&docId=E21F628A62DE73F1A303005056AB0C4F&compId=irf3805s-7ppbf.pdf?ci_sign=c4df994e7b162fcc0e0cfd81692e30268d46ac41
IRF3805STRL-7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3610STRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDBA92288AC143&compId=IRF3610STRLPBF.pdf?ci_sign=95fdba56d7c40ac1aecdbfbb4c03f02b5478e3e1
IRF3610STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AE5052B3AFC748&compId=TLE7258.pdf?ci_sign=fb47dd87523959ba8ff4c5c2ed4ff13300dd97c8
TLE7258SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
91+0.79 EUR
100+0.72 EUR
115+0.63 EUR
250+0.62 EUR
Mindestbestellmenge: 76
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IPB035N08N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB3C44E35211C&compId=IPB035N08N3G-DTE.pdf?ci_sign=21c5de3139bc2864bea66c1d6aed3968809828d3
IPB035N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Produkt ist nicht verfügbar
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BSC105N10LSFGATMA1 BSC105N10LSFG-DTE.pdf
BSC105N10LSFGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10.5mΩ
Gate-source voltage: ±20V
Drain current: 90A
Drain-source voltage: 100V
Power dissipation: 156W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4104STRL pVersion=0046&contRep=ZT&docId=E1C045883D5255F1A6F5005056AB5A8F&compId=auirf4104.pdf?ci_sign=925a57986ee2188c36cc97181d621bea692e9156
AUIRF4104STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Technology: HEXFET®
Case: D2PAK
Kind of channel: enhancement
Kind of package: reel
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 10mΩ
Power dissipation: 140W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55BFIR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55FFAR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S29AL016J55TFI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFIR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFIR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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BBY5502VH6327XTSA1 BBY55_SER.pdf
BBY5502VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SC79
Features of semiconductor devices: RF
Capacitance: 5.5...19.6pF
Max. off-state voltage: 16V
Leakage current: 0.1µA
auf Bestellung 1979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
258+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 228
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TLE6232GPAUMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8942C4BC6A6143&compId=TLE6232GP.pdf?ci_sign=24e0445975d30b12ea03dfdacbe39036b23c1eb4
TLE6232GPAUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Output current: 0.55...1.1A
Technology: FLEX
Number of channels: 6
Kind of output: N-Channel
Turn-on time: 10µs
Turn-off time: 10µs
Produkt ist nicht verfügbar
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TLE6251-2G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0BA68F3690A14&compId=TLE6251-2G.pdf?ci_sign=74c5e0fe904ed5d2f66a2c97797acfae64a2d9da
TLE6251-2G
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2132STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
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IPP024N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC4C2806A011C&compId=IPP024N06N3G-DTE.pdf?ci_sign=50db48bc36890d6860fe3ae63f8a687849e4e47e
IPP024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
14+5.36 EUR
17+4.3 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IPI024N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69966EB25DC411C&compId=IPI024N06N3G-DTE.pdf?ci_sign=af4669f0517a60affc571042607d4f14e1306ced
IPI024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFNR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFNR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BAI010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BAI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI012 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFN010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFN020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70FFI012 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70FFI020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70FFI022 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70FFM020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70TFA020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70TFN010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70TFN013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70TFN020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70TFN023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB054N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5EC939E60811C&compId=IPB054N06N3G-DTE.pdf?ci_sign=84f615a05cf8a8d54ec1b710306fbe75a60d1fe9
IPB054N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDM02G120C5XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBA3490FE516FA8&compId=IDM02G120C5-DTE.pdf?ci_sign=39f02fd9a145e2170f3e498cb765e81a39c4fb99
IDM02G120C5XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Mounting: SMD
Case: PG-TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1.2µA
Load current: 2A
Power dissipation: 98W
Max. forward voltage: 1.4V
Max. forward impulse current: 31A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25F431FB8811C&compId=BSC014N06NS-DTE.pdf?ci_sign=89be9cef3c84b02cc52bd76782f1cbbbafd2f7d6
BSC014N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT5402VH6327XTSA1 BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf
BAT5402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.2A; 230mW
Load current: 0.2A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SC79
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
550+0.13 EUR
767+0.093 EUR
918+0.078 EUR
1169+0.061 EUR
1334+0.054 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR8405TRL INFN-S-A0008053586-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFB8407 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBEF63752B5EA&compId=AUIRFB8407.pdf?ci_sign=77c7432b80b269846f5e47385d4aa9b20e3cd3ad
AUIRFB8407
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFSL8407 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBE382C02195EA&compId=AUIRFSL8407.pdf?ci_sign=4c0550a9897f895e27738a49f082a991e26f4267
AUIRFSL8407
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFB8405 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBC936327F5EA&compId=AUIRFB8405.pdf?ci_sign=7b480d6d4381ed9eff5cd4a93dd04a3a2f195ed0
AUIRFB8405
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFB8409 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBC0B3419C15EA&compId=AUIRFB8409.pdf?ci_sign=7f12e48652dc15e699fd5e099a6f836db55a2bbf
AUIRFB8409
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR38263MTRPBFAUMA1 IR38263M.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Interface: PMBus; PVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC110N06NS3GATMA1 BSC110N06NS3G-DTE.pdf
BSC110N06NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC110N15NS5ATMA1 Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 48A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Pulsed drain current: 304A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC117N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9A69886D211C&compId=BSC117N08NS5-DTE.pdf?ci_sign=23efda944c0554f017e600157a0f280e1d331efa
BSC117N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.7mΩ
Drain current: 49A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
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BSC118N10NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9DCDB846011C&compId=BSC118N10NSG-DTE.pdf?ci_sign=677f6c93c2498a7ba9596957c0f0ef730c263662
BSC118N10NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.8mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC123N10LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA96CD3C5811C&compId=BSC123N10LSG-DTE.pdf?ci_sign=502e468ba211a3d90ef62890cb82e0b16657e541
BSC123N10LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Produkt ist nicht verfügbar
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BSC12DN20NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6CDBBD7E411C&compId=BSC12DN20NS3G-DTE.pdf?ci_sign=a25373e9ee75a46b52f6339ff91ce7cebfbad060
BSC12DN20NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 11.3A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC16DN25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6DE8A553411C&compId=BSC16DN25NS3G-DTE.pdf?ci_sign=da8a4c7c5c75536fe143cf3873658d8ba84f863b
BSC16DN25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.165Ω
Drain current: 10.9A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC190N12NS3GATMA1 BSC190N12NS3G-DTE.pdf
BSC190N12NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 44A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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