Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149582) > Seite 2474 nach 2494
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IRFH8307TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Power dissipation: 156W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH8303TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 280A Power dissipation: 156W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFH8321TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Case: PQFN5X6 Drain-source voltage: 30V Drain current: 21A Type of transistor: N-MOSFET Power dissipation: 3.4W Polarisation: unipolar Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRFH8325TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Case: PQFN5X6 Drain-source voltage: 30V Drain current: 21A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IHW30N135R3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 175W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 263nC Kind of package: tube Turn-off time: 510ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
Produkt ist nicht verfügbar |
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BAS3010A03WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A Mounting: SMD Type of diode: Schottky rectifying Case: SOD323 Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 10A |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT1804E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOT23 Mounting: SMD Semiconductor structure: double series Features of semiconductor devices: PIN; RF Max. forward voltage: 1.2V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BSZ130N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 31A Power dissipation: 25W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
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IPB029N06N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3 Type of transistor: N-MOSFET Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 2.9mΩ Power dissipation: 188W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
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ISP452 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Mounting: SMD Number of channels: 1 Case: SOT223-3 Supply voltage: 5...34V DC On-state resistance: 0.16Ω Kind of output: N-Channel Technology: Industrial PROFET |
auf Bestellung 684 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4310ZTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IR2128SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 12...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 150ns |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3607TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TT320N18SOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB50SB-1 Max. off-state voltage: 1.8kV Max. forward voltage: 1.47V Load current: 320A Semiconductor structure: double series Gate current: 150mA Max. forward impulse current: 9.5kA |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IDW40G65C5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W Case: PG-TO247-3 Max. off-state voltage: 650V Max. forward voltage: 1.8V Load current: 40A Semiconductor structure: single diode Max. forward impulse current: 153A Leakage current: 8.2µA Power dissipation: 112W Kind of package: tube Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
CY7C2245KV18-450BZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 450MHz |
Produkt ist nicht verfügbar |
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IPA65R280E6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPI65R280E6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPP65R280E6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB65R280E6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPI65R280C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSZ100N06LS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BCR602XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1 Protection: overheating OTP Operating voltage: 8...60V DC Output current: 10mA Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: linear dimming; PWM Kind of integrated circuit: current regulator; LED driver Mounting: SMD Case: PG-SOT23-6 |
auf Bestellung 1586 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR420U | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V DC |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP78 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3 Case: SOT223-3 On-state resistance: 35mΩ Output voltage: 42V Output current: 3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: HITFET® Kind of integrated circuit: low-side Mounting: SMD |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3230AKSA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-12 On-state resistance: 6.5mΩ Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C Output voltage: 49V Power dissipation: 300W Integrated circuit features: internal temperature sensor |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS5120-2EKA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14 Output current: 2A Type of integrated circuit: power switch Number of channels: 2 Kind of output: N-Channel Technology: PROFET™+ 12V Kind of integrated circuit: high-side Mounting: SMD Case: SO14 Supply voltage: 8...18V DC On-state resistance: 0.22Ω |
auf Bestellung 1898 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3180AATMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1 Operating temperature: -40...175°C Case: PG-TO263-7-1 On-state resistance: 6.5mΩ Output voltage: 49V Output current: 36A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Power dissipation: 300W Integrated circuit features: internal temperature sensor Kind of package: reel; tape Technology: TEMPFET® Kind of integrated circuit: low-side Mounting: SMD |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
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BFN26E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.2A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 70MHz |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4368PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC Drain-source voltage: 75V Drain current: 350A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube Gate charge: 380nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO247AC |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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CY62137EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Operating temperature: -40...85°C Case: TSOP44 II Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 45ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD |
Produkt ist nicht verfügbar |
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CY62137FV18LL-55BVXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel Operating temperature: -40...85°C Case: VFBGA48 Supply voltage: 1.65...2.25V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 55ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD |
Produkt ist nicht verfügbar |
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CY62137FV30LL-45BVXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel Operating temperature: -40...85°C Case: VFBGA48 Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 45ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62137FV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel Operating temperature: -40...85°C Case: TSOP44 II Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 45ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62137FV30LL-55ZSXET | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel Operating temperature: -40...125°C Case: TSOP44 II Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx16bit Access time: 55ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD |
Produkt ist nicht verfügbar |
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CY62138EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel Operating temperature: -40...85°C Case: VFBGA36 Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx8bit Access time: 45ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD |
Produkt ist nicht verfügbar |
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CY62138FV30LL-45ZAXAT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel Operating temperature: -40...85°C Case: STSOP32 Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx8bit Access time: 45ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD |
Produkt ist nicht verfügbar |
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CY62138FV30LL-45ZAXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel Operating temperature: -40...85°C Case: STSOP32 Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx8bit Access time: 45ns Kind of package: reel; tape Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IPD35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -T Pulsed drain current: 140A |
Produkt ist nicht verfügbar |
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SMBD914E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape Max. off-state voltage: 100V Load current: 0.25A Semiconductor structure: single diode Power dissipation: 0.37W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: fast switching Mounting: SMD Case: SOT23 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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S25HS01GTDPBHI033 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25HS01GTDPMHI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 1Gb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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S26HS01GTGABHA030 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
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ITS711L1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20 Supply voltage: 5...34V DC Output voltage: 2...4V Output current: 1.7A Type of integrated circuit: power switch Number of channels: 4 Kind of output: N-Channel Technology: Industrial PROFET Kind of integrated circuit: high-side Mounting: SMD Case: DSO20 |
auf Bestellung 824 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN80R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.1A Power dissipation: 6.8W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 11nC Kind of package: reel Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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DD100N16S | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw Case: BG-SB20-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.6V Load current: 130A Semiconductor structure: double series Max. forward impulse current: 2.5kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847BWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFR9N20DTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK Case: DPAK Mounting: SMD Drain-source voltage: 200V Drain current: 9.4A Type of transistor: N-MOSFET Power dissipation: 86W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRF8113TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.8A Pulsed drain current: 135A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BC857BE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
Produkt ist nicht verfügbar |
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IRF7351TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 3598 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC016N06NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PVI5013RSPBF | INFINEON TECHNOLOGIES |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Turn-on time: 5ms Turn-off time: 25µs Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Manufacturer series: PVI5013RPbF Type of optocoupler: optocoupler Mounting: SMD Case: Gull wing 8 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2982STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1 Case: PG-DSO-8 Operating voltage: 12.8...18V DC Output current: 200...400mA Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: PWM Kind of integrated circuit: LED driver; SMPS controller Topology: flyback Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB042N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IDP30E120XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2 Type of diode: rectifying Case: TO220-2 Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB025N08N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKD04N60RFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Power dissipation: 75W Case: DPAK Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ Collector current: 4A Pulsed collector current: 12A Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4800 RELAX ETHERCAT KIT | INFINEON TECHNOLOGIES |
![]() Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144 Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2 Kit contents: development board with XMCmicrocontroller; expansion board Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2 Application: building automation; CAV; EtherCAT; motors; photovoltaics Kind of architecture: Cortex M4 Type of development kit: ARM Infineon Family: XMC4800 Components: XMC4800-F144 Number of add-on connectors: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPW60R070C6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IRFH8307TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH8303TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH8321TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.4W
Polarisation: unipolar
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.4W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH8325TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IHW30N135R3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS3010A03WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
230+ | 0.31 EUR |
309+ | 0.23 EUR |
353+ | 0.20 EUR |
396+ | 0.19 EUR |
BAT1804E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSZ130N03MSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB029N06N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 2.9mΩ
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISP452 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Kind of output: N-Channel
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Kind of output: N-Channel
Technology: Industrial PROFET
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.75 EUR |
30+ | 2.46 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
100+ | 2.20 EUR |
500+ | 2.14 EUR |
IRFS4310ZTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2128SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.27 EUR |
32+ | 2.29 EUR |
33+ | 2.17 EUR |
IRFR3607TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TT320N18SOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; BG-PB50SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50SB-1
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.47V
Load current: 320A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 9.5kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 126.41 EUR |
IDW40G65C5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C2245KV18-450BZXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA65R280E6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPI65R280E6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R280E6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPB65R280E6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPI65R280C6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSZ100N06LS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR602XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Protection: overheating OTP
Operating voltage: 8...60V DC
Output current: 10mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
Case: PG-SOT23-6
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Protection: overheating OTP
Operating voltage: 8...60V DC
Output current: 10mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
Case: PG-SOT23-6
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
110+ | 0.65 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
250+ | 0.45 EUR |
BCR420U |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
230+ | 0.31 EUR |
265+ | 0.27 EUR |
305+ | 0.24 EUR |
325+ | 0.22 EUR |
BSP78 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Case: SOT223-3
On-state resistance: 35mΩ
Output voltage: 42V
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Case: SOT223-3
On-state resistance: 35mΩ
Output voltage: 42V
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
32+ | 2.27 EUR |
53+ | 1.37 EUR |
55+ | 1.30 EUR |
1000+ | 1.27 EUR |
2000+ | 1.26 EUR |
BTS282ZE3230AKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.02 EUR |
10+ | 7.15 EUR |
BTS5120-2EKA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Mounting: SMD
Case: SO14
Supply voltage: 8...18V DC
On-state resistance: 0.22Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Mounting: SMD
Case: SO14
Supply voltage: 8...18V DC
On-state resistance: 0.22Ω
auf Bestellung 1898 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.46 EUR |
32+ | 2.26 EUR |
53+ | 1.37 EUR |
55+ | 1.30 EUR |
1000+ | 1.26 EUR |
BTS282ZE3180AATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Operating temperature: -40...175°C
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Output voltage: 49V
Output current: 36A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Kind of package: reel; tape
Technology: TEMPFET®
Kind of integrated circuit: low-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Operating temperature: -40...175°C
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Output voltage: 49V
Output current: 36A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
Kind of package: reel; tape
Technology: TEMPFET®
Kind of integrated circuit: low-side
Mounting: SMD
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.58 EUR |
12+ | 5.96 EUR |
13+ | 5.63 EUR |
BFN26E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
341+ | 0.21 EUR |
459+ | 0.16 EUR |
532+ | 0.13 EUR |
807+ | 0.09 EUR |
863+ | 0.08 EUR |
3000+ | 0.08 EUR |
IRFP4368PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Drain-source voltage: 75V
Drain current: 350A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 380nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Drain-source voltage: 75V
Drain current: 350A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 380nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
CY62137EV30LL-45ZSXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY62137FV18LL-55BVXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 1.65...2.25V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 1.65...2.25V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62137FV30LL-45BVXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62137FV30LL-45ZSXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62137FV30LL-55ZSXET |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Operating temperature: -40...125°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Operating temperature: -40...125°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62138EV30LL-45BVXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Operating temperature: -40...85°C
Case: VFBGA36
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Operating temperature: -40...85°C
Case: VFBGA36
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62138FV30LL-45ZAXAT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62138FV30LL-45ZAXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD35N10S3L26ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBD914E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Power dissipation: 0.37W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Power dissipation: 0.37W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOT23
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
S25HS01GTDPBHI033 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25HS01GTDPMHI013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S26HS01GTGABHA030 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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ITS711L1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Output current: 1.7A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: DSO20
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Output current: 1.7A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: DSO20
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.74 EUR |
19+ | 3.93 EUR |
20+ | 3.72 EUR |
IPN80R1K2P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 6.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 6.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
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DD100N16S |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Case: BG-SB20-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.6V
Load current: 130A
Semiconductor structure: double series
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Case: BG-SB20-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.6V
Load current: 130A
Semiconductor structure: double series
Max. forward impulse current: 2.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.74 EUR |
12+ | 29.34 EUR |
BC847BWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
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IRFR9N20DTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 200V
Drain current: 9.4A
Type of transistor: N-MOSFET
Power dissipation: 86W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 200V
Drain current: 9.4A
Type of transistor: N-MOSFET
Power dissipation: 86W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
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IRF8113TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BC857BE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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IRF7351TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3598 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.09 EUR |
50+ | 1.43 EUR |
87+ | 0.83 EUR |
91+ | 0.79 EUR |
BSC016N06NSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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PVI5013RSPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Manufacturer series: PVI5013RPbF
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 8
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Manufacturer series: PVI5013RPbF
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 8
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
IRS2982STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Case: PG-DSO-8
Operating voltage: 12.8...18V DC
Output current: 200...400mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: PWM
Kind of integrated circuit: LED driver; SMPS controller
Topology: flyback
Mounting: SMD
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Case: PG-DSO-8
Operating voltage: 12.8...18V DC
Output current: 200...400mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: PWM
Kind of integrated circuit: LED driver; SMPS controller
Topology: flyback
Mounting: SMD
Produkt ist nicht verfügbar
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IPB042N10N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDP30E120XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.03 EUR |
24+ | 2.97 EUR |
IPB025N08N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKD04N60RFATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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XMC4800 RELAX ETHERCAT KIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Kit contents: development board with XMCmicrocontroller; expansion board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Kit contents: development board with XMCmicrocontroller; expansion board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
Produkt ist nicht verfügbar
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IPW60R070C6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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