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IRF7607TRPBF IRF7607TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A7E4395B88F1A303005056AB0C4F&compId=irf7607pbf.pdf?ci_sign=df1f9251b24cacd7a6a4255ddad2d2f9ec10fde1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.8W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.8W
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF7601TRPBF IRF7601TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A77B13BA4BF1A303005056AB0C4F&compId=irf7601pbf.pdf?ci_sign=b64038af7d5f7c3646022a69072534bd2f6da07a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; 1.8W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain-source voltage: 20V
Drain current: 5.7A
Power dissipation: 1.8W
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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SPB21N50C3ATMA1 INFINEON TECHNOLOGIES SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.9 EUR
Mindestbestellmenge: 1000
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IPD096N08N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 73A; 100W; DPAK,TO252; SMT
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Mounting: SMD
Drain current: 73A
Drain-source voltage: 80V
Gate charge: 35nC
On-state resistance: 7.9mΩ
Kind of channel: enhancement
Case: DPAK; TO252
Gate-source voltage: 20V
Power dissipation: 100W
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.56 EUR
Mindestbestellmenge: 2500
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BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3871A373A03E11C&compId=BSC070N10NS3G-dte.pdf?ci_sign=5c8c232415a157613259f38f01c15cb9959274fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC072N08NS5ATMA1 BSC072N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38722EF2F23A11C&compId=BSC072N08NS5-DTE.pdf?ci_sign=c26e399b4328c18b246b5e82a3b4ee2831baf95e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3709ZTRPBF IRFR3709ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD03F9598C55EA&compId=IRFR3709ZTRPBF.pdf?ci_sign=81100efa9686ec246f64dec8abf1c711090f7610 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR3709ZTRRPBF IRFR3709ZTRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C3E9C2773DF1A303005056AB0C4F&compId=irfr3709zpbf.pdf?ci_sign=64d82bd91e26be1182992fc1edd4c49fe3fb408a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT6404E6433HTMA1 INFINEON TECHNOLOGIES INFNS11551-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 250mA; 5ns
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Capacitance: 6pF
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Reverse recovery time: 5ns
Max. load current: 0.25A
Leakage current: 2µA
Application: automotive industry
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.063 EUR
Mindestbestellmenge: 10000
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IPB020N04NGATMA1 IPB020N04NGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D4B3FFC6811C&compId=IPB020N04NG-DTE.pdf?ci_sign=64a12bcd61572fea0991d6044b6ce94671247ea2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR183E6327HTSA1 INFINEON TECHNOLOGIES bfr183.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426a1b8f80656 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 450mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT23
Current gain: 100
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.099 EUR
Mindestbestellmenge: 3000
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BSC014N04LSATMA1 BSC014N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25A9939DDA11C&compId=BSC014N04LS-DTE.pdf?ci_sign=702ca4986b6c1f5e5d8f755d7d5c4d74798c8fd0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC014N04LSIATMA1 BSC014N04LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25D852524411C&compId=BSC014N04LSI-DTE.pdf?ci_sign=53868b51fbb5ec3ed88489a6d0c056d375046e73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D8C91B1A2E143&compId=IAUT300N08S5N012.pdf?ci_sign=a7ed1dfb1242275fc40ac963e384fc5474eb3a2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUT240N08S5N019ATMA1 IAUT240N08S5N019ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5F158E68B8BF&compId=IAUT240N08S5N019.pdf?ci_sign=489748605735eacfc3f8b132fe907392a2a67dbe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 230W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA625C2D75F8BF&compId=IAUT260N10S5N019.pdf?ci_sign=1aa6b2f88c04f179f60d3021911e4032f4f93c2b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA3F7795BC38BF&compId=IAUT300N10S5N015.pdf?ci_sign=e3a82d26f35a79f1a1297b5f8c8713126b20d22b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IFX1050G IFX1050G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC30C27BD2AEA14&compId=IFX1050G.pdf?ci_sign=3b19f6f23684a12e8a704a9094175cf74ba83fe2 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Produkt ist nicht verfügbar
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AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC4A423E6C873D7&compId=AUIRGx4062D1.pdf?ci_sign=af7171373d8d0f811877b4635ab8c5c885c6ede0 Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Type of transistor: IGBT
Case: TO262
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22271D69DD6D2F1A303005056AB0C4F&compId=irgs4062dpbf.pdf?ci_sign=f1806f5a728b86898d073ed3e7f80a224519b756 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO262
Collector current: 48A
Power dissipation: 250W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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BC847BE6327HTSA1 BC847BE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1464 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
459+0.16 EUR
601+0.12 EUR
679+0.11 EUR
793+0.09 EUR
1464+0.049 EUR
Mindestbestellmenge: 358
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IPD90N04S304ATMA1 IPD90N04S304ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5695EBD4E4143&compId=IPD90N04S304.pdf?ci_sign=744e6d18ceef1d2e8f817da583e63cd71a15d851 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T
Gate charge: 60nC
Drain current: 90A
Power dissipation: 136W
Produkt ist nicht verfügbar
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BSC024NE2LSATMA1 BSC024NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD7287EF0E811C&compId=BSC024NE2LS-dte.pdf?ci_sign=02f2819344fa6536fccc816908b39ac8866af181 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2130JTRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
500+5.98 EUR
Mindestbestellmenge: 500
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IRF7493TRPBF IRF7493TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A5F4DDE2DCF1A303005056AB0C4F&compId=irf7493pbf.pdf?ci_sign=c0b1b5129242a232c27549a49cf8e89a1f378ec3 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Kind of package: reel
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.5W
Drain current: 9.2A
Drain-source voltage: 80V
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TD330N16KOFHPSA2 TD330N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E70C51032B3D1&compId=TD330N16KOF.pdf?ci_sign=cf0811a4f9d14c4abaff1a75e1d02469aca9fb02 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Produkt ist nicht verfügbar
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TT330N16KOF TT330N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D35FD476572745&compId=TT330N16KOF.pdf?ci_sign=8482230765bc41badec92cc3d5f0c1ef031b3b33 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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SPW32N50C3FKSA1 INFINEON TECHNOLOGIES SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 560V
Drain current: 32A
Power dissipation: 284W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 170nC
Kind of channel: enhancement
auf Bestellung 9396 Stücke:
Lieferzeit 14-21 Tag (e)
30+5.69 EUR
90+5.12 EUR
Mindestbestellmenge: 30
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IRS2127STRPBF INFINEON TECHNOLOGIES irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.77 EUR
Mindestbestellmenge: 2500
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IRS2113MTRPBF INFINEON TECHNOLOGIES irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.99 EUR
Mindestbestellmenge: 3000
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BSZ065N03LSATMA1 BSZ065N03LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E18BF866E611C&compId=BSZ065N03LS-DTE.pdf?ci_sign=75cbba94d172cc4e8a4d3474d69165678811b870 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Power dissipation: 26W
Case: PG-TSDSON-8
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ISZ065N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 40A; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Electrical mounting: SMT
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5000+0.3 EUR
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IPU50R1K4CEBKMA1 IPU50R1K4CEBKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE519BBDCDF1CC&compId=IPU50R1K4CE-DTE.pdf?ci_sign=75cba2a3bf7b157346c62f49d7e4ba3c18a3920c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.4Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Produkt ist nicht verfügbar
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IPB011N04LGATMA1 IPB011N04LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C33D8F8C211C&compId=IPB011N04LG-DTE.pdf?ci_sign=886231efb9054af0d16648b0abff6e958593f7ba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB011N04NGATMA1 IPB011N04NGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C55CF5FE411C&compId=IPB011N04NG-dte.pdf?ci_sign=afef0bed750b02c09e3dc1ba463cc912cc3f0be4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
Polarisation: unipolar
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IPP011N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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50+2.2 EUR
250+1.99 EUR
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BSS169IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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Mindestbestellmenge: 3000
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IRL2910STRLPBF IRL2910STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22273AA1BBA60F1A303005056AB0C4F&compId=irl2910spbf.pdf?ci_sign=e0e455514ca6d17f7b1f43e807163325c855281b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BFP450H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
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Lieferzeit 14-21 Tag (e)
3000+0.32 EUR
Mindestbestellmenge: 3000
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IPP023N04NGXKSA1 IPP023N04NGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E96896E26C211C&compId=IPP023N04NG-DTE.pdf?ci_sign=123ca1164b118b381a0221555f5c278b376013f2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1018ESTRLPBF IRF1018ESTRLPBF INFINEON TECHNOLOGIES irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 197 Stücke:
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48+1.52 EUR
53+1.37 EUR
85+0.84 EUR
90+0.8 EUR
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TT250N18KOFHPSA1 TT250N18KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE76C04CE7E469&compId=TT250N18KOF.pdf?ci_sign=a51bfa528b7ada5ee438c08be9b69cdbf4b92422 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.5V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7kA
Case: BG-PB50-1
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IPD047N03LF2SATMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT
Technology: MOSFET
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
On-state resistance: 4.7mΩ
auf Bestellung 2000 Stücke:
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2000+0.37 EUR
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BFR181E6327HTSA1 BFR181E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A313F6F3849820&compId=BFR181.pdf?ci_sign=38a950279fd876c36adcfab0661237d340b91310 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT23
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
Current gain: 70...140
Kind of transistor: RF
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264+0.27 EUR
317+0.23 EUR
360+0.2 EUR
421+0.17 EUR
506+0.14 EUR
569+0.13 EUR
603+0.12 EUR
Mindestbestellmenge: 264
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BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928D6EDF37B1CC&compId=BSS83PH6327XTSA1-dte.pdf?ci_sign=af6b6a3bc6b9093bad4b1410edb90e4f35d69241 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 17438 Stücke:
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186+0.39 EUR
272+0.26 EUR
343+0.21 EUR
410+0.17 EUR
486+0.15 EUR
962+0.074 EUR
1021+0.07 EUR
Mindestbestellmenge: 186
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IPB50R250CPATMA1 IPB50R250CPATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE18A4AE4D71CC&compId=IPB50R250CP-DTE.pdf?ci_sign=b3cb3c08e907a1bd70e009ec0d68109bdbd7b8b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Power dissipation: 114W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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IPI60R250CPAKSA1 IPI60R250CPAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594293782B171BF&compId=IPI60R250CP-DTE.pdf?ci_sign=80b33f6c9537f9e385eb1a8734bae5eb6131a853 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO262-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 104W
Drain-source voltage: 600V
Produkt ist nicht verfügbar
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IPP60R250CPXKSA1 IPP60R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594521AEF3011BF&compId=IPP60R250CP-DTE.pdf?ci_sign=079b2c37446f3fa596ccde728948be63713015c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC146N10LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.7 EUR
Mindestbestellmenge: 5000
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IKB06N60TATMA1 IKB06N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD343675457820&compId=IKB06N60T.pdf?ci_sign=dc014062b346c713605c9ed411198b67f0f4b331 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
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IGD06N60TATMA1 IGD06N60TATMA1 INFINEON TECHNOLOGIES INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 136ns
Produkt ist nicht verfügbar
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IKA06N60TXKSA1 IKA06N60TXKSA1 INFINEON TECHNOLOGIES IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IKD06N60RFATMA1 IKD06N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD9D4B1E49820&compId=IKD06N60RF.pdf?ci_sign=96e97126e13c6c0e3ebae3677a35248be6cea775 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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AIHD06N60RATMA1 AIHD06N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA4DCD10CAB820&compId=AIHD06N60R.pdf?ci_sign=0a279d67df7c76aa1eaddf5e0c72b6693c0e43bf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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AIHD06N60RFATMA1 AIHD06N60RFATMA1 INFINEON TECHNOLOGIES Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 16ns
Turn-off time: 127ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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BSZ16DN25NS3GATMA1 BSZ16DN25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC4361A78EA11C&compId=BSZ16DN25NS3G-DTE.pdf?ci_sign=1725697285a132145f60b7ce4ef14c6e8c925a67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 10.9A
On-state resistance: 0.165Ω
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Produkt ist nicht verfügbar
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BSZ42DN25NS3GATMA1 BSZ42DN25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC5D8650BC411C&compId=BSZ42DN25NS3G-DTE.pdf?ci_sign=d9b9070310c5f75946aca5576d4f831b39aa87a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 5A
On-state resistance: 0.425Ω
Power dissipation: 33.8W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Produkt ist nicht verfügbar
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IRF8010PBF IRF8010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E531D852BF1A6F5005056AB5A8F&compId=irf8010.pdf?ci_sign=d280f417751b4795fda78b32f97b3dbddff52aba description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 81nC
On-state resistance: 15mΩ
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.67 EUR
48+1.5 EUR
52+1.4 EUR
72+1 EUR
75+0.96 EUR
Mindestbestellmenge: 43
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IRF7328TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7328-datasheet-en.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF7328TRPBF IRF7328TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219F99701188F1A303005056AB0C4F&compId=irf7328pbf.pdf?ci_sign=1056fd32db11150a9acdcdcd1953f3b20c8dc7dd Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7607TRPBF pVersion=0046&contRep=ZT&docId=E221A7E4395B88F1A303005056AB0C4F&compId=irf7607pbf.pdf?ci_sign=df1f9251b24cacd7a6a4255ddad2d2f9ec10fde1
IRF7607TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.8W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.8W
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF7601TRPBF pVersion=0046&contRep=ZT&docId=E221A77B13BA4BF1A303005056AB0C4F&compId=irf7601pbf.pdf?ci_sign=b64038af7d5f7c3646022a69072534bd2f6da07a
IRF7601TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; 1.8W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel
Type of transistor: N-MOSFET
Technology: HEXFET®
Drain-source voltage: 20V
Drain current: 5.7A
Power dissipation: 1.8W
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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SPB21N50C3ATMA1 SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.9 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPD096N08N3GATMA1 Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 73A; 100W; DPAK,TO252; SMT
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Mounting: SMD
Drain current: 73A
Drain-source voltage: 80V
Gate charge: 35nC
On-state resistance: 7.9mΩ
Kind of channel: enhancement
Case: DPAK; TO252
Gate-source voltage: 20V
Power dissipation: 100W
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.56 EUR
Mindestbestellmenge: 2500
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BSC070N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3871A373A03E11C&compId=BSC070N10NS3G-dte.pdf?ci_sign=5c8c232415a157613259f38f01c15cb9959274fa
BSC070N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC072N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38722EF2F23A11C&compId=BSC072N08NS5-DTE.pdf?ci_sign=c26e399b4328c18b246b5e82a3b4ee2831baf95e
BSC072N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3709ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD03F9598C55EA&compId=IRFR3709ZTRPBF.pdf?ci_sign=81100efa9686ec246f64dec8abf1c711090f7610
IRFR3709ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3709ZTRRPBF pVersion=0046&contRep=ZT&docId=E221C3E9C2773DF1A303005056AB0C4F&compId=irfr3709zpbf.pdf?ci_sign=64d82bd91e26be1182992fc1edd4c49fe3fb408a
IRFR3709ZTRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT6404E6433HTMA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 250mA; 5ns
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Capacitance: 6pF
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Reverse recovery time: 5ns
Max. load current: 0.25A
Leakage current: 2µA
Application: automotive industry
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.063 EUR
Mindestbestellmenge: 10000
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IPB020N04NGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D4B3FFC6811C&compId=IPB020N04NG-DTE.pdf?ci_sign=64a12bcd61572fea0991d6044b6ce94671247ea2
IPB020N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFR183E6327HTSA1 bfr183.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426a1b8f80656
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 450mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT23
Current gain: 100
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.099 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25A9939DDA11C&compId=BSC014N04LS-DTE.pdf?ci_sign=702ca4986b6c1f5e5d8f755d7d5c4d74798c8fd0
BSC014N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC014N04LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25D852524411C&compId=BSC014N04LSI-DTE.pdf?ci_sign=53868b51fbb5ec3ed88489a6d0c056d375046e73
BSC014N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT300N08S5N012ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D8C91B1A2E143&compId=IAUT300N08S5N012.pdf?ci_sign=a7ed1dfb1242275fc40ac963e384fc5474eb3a2f
IAUT300N08S5N012ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT240N08S5N019ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5F158E68B8BF&compId=IAUT240N08S5N019.pdf?ci_sign=489748605735eacfc3f8b132fe907392a2a67dbe
IAUT240N08S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 230W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT260N10S5N019ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA625C2D75F8BF&compId=IAUT260N10S5N019.pdf?ci_sign=1aa6b2f88c04f179f60d3021911e4032f4f93c2b
IAUT260N10S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT300N10S5N015ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA3F7795BC38BF&compId=IAUT300N10S5N015.pdf?ci_sign=e3a82d26f35a79f1a1297b5f8c8713126b20d22b
IAUT300N10S5N015ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IFX1050G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC30C27BD2AEA14&compId=IFX1050G.pdf?ci_sign=3b19f6f23684a12e8a704a9094175cf74ba83fe2
IFX1050G
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Produkt ist nicht verfügbar
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AUIRGSL4062D1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC4A423E6C873D7&compId=AUIRGx4062D1.pdf?ci_sign=af7171373d8d0f811877b4635ab8c5c885c6ede0
AUIRGSL4062D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Type of transistor: IGBT
Case: TO262
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRGSL4062DPBF pVersion=0046&contRep=ZT&docId=E22271D69DD6D2F1A303005056AB0C4F&compId=irgs4062dpbf.pdf?ci_sign=f1806f5a728b86898d073ed3e7f80a224519b756
IRGSL4062DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO262
Collector current: 48A
Power dissipation: 250W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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BC847BE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC847BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
459+0.16 EUR
601+0.12 EUR
679+0.11 EUR
793+0.09 EUR
1464+0.049 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N04S304ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5695EBD4E4143&compId=IPD90N04S304.pdf?ci_sign=744e6d18ceef1d2e8f817da583e63cd71a15d851
IPD90N04S304ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T
Gate charge: 60nC
Drain current: 90A
Power dissipation: 136W
Produkt ist nicht verfügbar
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BSC024NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD7287EF0E811C&compId=BSC024NE2LS-dte.pdf?ci_sign=02f2819344fa6536fccc816908b39ac8866af181
BSC024NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2130JTRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+5.98 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
IRF7493TRPBF description pVersion=0046&contRep=ZT&docId=E221A5F4DDE2DCF1A303005056AB0C4F&compId=irf7493pbf.pdf?ci_sign=c0b1b5129242a232c27549a49cf8e89a1f378ec3
IRF7493TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Kind of package: reel
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.5W
Drain current: 9.2A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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TD330N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E70C51032B3D1&compId=TD330N16KOF.pdf?ci_sign=cf0811a4f9d14c4abaff1a75e1d02469aca9fb02
TD330N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Produkt ist nicht verfügbar
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TT330N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D35FD476572745&compId=TT330N16KOF.pdf?ci_sign=8482230765bc41badec92cc3d5f0c1ef031b3b33
TT330N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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SPW32N50C3FKSA1 SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 560V
Drain current: 32A
Power dissipation: 284W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 170nC
Kind of channel: enhancement
auf Bestellung 9396 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+5.69 EUR
90+5.12 EUR
Mindestbestellmenge: 30
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IRS2127STRPBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
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IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.99 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BSZ065N03LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E18BF866E611C&compId=BSZ065N03LS-DTE.pdf?ci_sign=75cbba94d172cc4e8a4d3474d69165678811b870
BSZ065N03LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Power dissipation: 26W
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
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ISZ065N03L5SATMA1 Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 40A; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.3 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPU50R1K4CEBKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE519BBDCDF1CC&compId=IPU50R1K4CE-DTE.pdf?ci_sign=75cba2a3bf7b157346c62f49d7e4ba3c18a3920c
IPU50R1K4CEBKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.4Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB011N04LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C33D8F8C211C&compId=IPB011N04LG-DTE.pdf?ci_sign=886231efb9054af0d16648b0abff6e958593f7ba
IPB011N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB011N04NGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C55CF5FE411C&compId=IPB011N04NG-dte.pdf?ci_sign=afef0bed750b02c09e3dc1ba463cc912cc3f0be4
IPB011N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPP011N04NF2SAKMA1 Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.2 EUR
250+1.99 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BSS169IXTSA1 Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.074 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IRL2910STRLPBF pVersion=0046&contRep=ZT&docId=E22273AA1BBA60F1A303005056AB0C4F&compId=irl2910spbf.pdf?ci_sign=e0e455514ca6d17f7b1f43e807163325c855281b
IRL2910STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BFP450H6327XTSA1 Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.32 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPP023N04NGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E96896E26C211C&compId=IPP023N04NG-DTE.pdf?ci_sign=123ca1164b118b381a0221555f5c278b376013f2
IPP023N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1018ESTRLPBF irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891
IRF1018ESTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
48+1.52 EUR
53+1.37 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
TT250N18KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE76C04CE7E469&compId=TT250N18KOF.pdf?ci_sign=a51bfa528b7ada5ee438c08be9b69cdbf4b92422
TT250N18KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.5V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7kA
Case: BG-PB50-1
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+250.25 EUR
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IPD047N03LF2SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT
Technology: MOSFET
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
On-state resistance: 4.7mΩ
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.37 EUR
Mindestbestellmenge: 2000
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BFR181E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A313F6F3849820&compId=BFR181.pdf?ci_sign=38a950279fd876c36adcfab0661237d340b91310
BFR181E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT23
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
Current gain: 70...140
Kind of transistor: RF
auf Bestellung 1395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
317+0.23 EUR
360+0.2 EUR
421+0.17 EUR
506+0.14 EUR
569+0.13 EUR
603+0.12 EUR
Mindestbestellmenge: 264
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BSS83PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928D6EDF37B1CC&compId=BSS83PH6327XTSA1-dte.pdf?ci_sign=af6b6a3bc6b9093bad4b1410edb90e4f35d69241
BSS83PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 17438 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
272+0.26 EUR
343+0.21 EUR
410+0.17 EUR
486+0.15 EUR
962+0.074 EUR
1021+0.07 EUR
Mindestbestellmenge: 186
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IPB50R250CPATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE18A4AE4D71CC&compId=IPB50R250CP-DTE.pdf?ci_sign=b3cb3c08e907a1bd70e009ec0d68109bdbd7b8b1
IPB50R250CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Power dissipation: 114W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI60R250CPAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594293782B171BF&compId=IPI60R250CP-DTE.pdf?ci_sign=80b33f6c9537f9e385eb1a8734bae5eb6131a853
IPI60R250CPAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO262-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 104W
Drain-source voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594521AEF3011BF&compId=IPP60R250CP-DTE.pdf?ci_sign=079b2c37446f3fa596ccde728948be63713015c0
IPP60R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC146N10LS5ATMA1 Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.7 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IKB06N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD343675457820&compId=IKB06N60T.pdf?ci_sign=dc014062b346c713605c9ed411198b67f0f4b331
IKB06N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 136ns
Produkt ist nicht verfügbar
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IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
IKA06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD9D4B1E49820&compId=IKD06N60RF.pdf?ci_sign=96e97126e13c6c0e3ebae3677a35248be6cea775
IKD06N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIHD06N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA4DCD10CAB820&compId=AIHD06N60R.pdf?ci_sign=0a279d67df7c76aa1eaddf5e0c72b6693c0e43bf
AIHD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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AIHD06N60RFATMA1
AIHD06N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 16ns
Turn-off time: 127ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ16DN25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC4361A78EA11C&compId=BSZ16DN25NS3G-DTE.pdf?ci_sign=1725697285a132145f60b7ce4ef14c6e8c925a67
BSZ16DN25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 10.9A
On-state resistance: 0.165Ω
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ42DN25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC5D8650BC411C&compId=BSZ42DN25NS3G-DTE.pdf?ci_sign=d9b9070310c5f75946aca5576d4f831b39aa87a8
BSZ42DN25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 5A
On-state resistance: 0.425Ω
Power dissipation: 33.8W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8010PBF description pVersion=0046&contRep=ZT&docId=E1C04E531D852BF1A6F5005056AB5A8F&compId=irf8010.pdf?ci_sign=d280f417751b4795fda78b32f97b3dbddff52aba
IRF8010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 81nC
On-state resistance: 15mΩ
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
48+1.5 EUR
52+1.4 EUR
72+1 EUR
75+0.96 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF7328TRPBFXTMA1 infineon-irf7328-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7328TRPBF pVersion=0046&contRep=ZT&docId=E2219F99701188F1A303005056AB0C4F&compId=irf7328pbf.pdf?ci_sign=1056fd32db11150a9acdcdcd1953f3b20c8dc7dd
IRF7328TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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