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BTS3118N BTS3118N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE6A74DEE17EFA8&compId=BTS3118N-DTE.pdf?ci_sign=ed8e0bc251d8224f31078d388e1d4a9a9f68b84f Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 1908 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
51+1.42 EUR
55+1.3 EUR
100+1.22 EUR
Mindestbestellmenge: 38
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IMW120R045M1XKSA1 IMW120R045M1XKSA1 INFINEON TECHNOLOGIES Infineon-IMW120R045M1-DataSheet-v02_03-EN.pdf?fileId=5546d46269bda8df0169de34fd2f3a3b Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -10...20V
On-state resistance: 59mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AIMW120R045M1XKSA1 AIMW120R045M1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C05C2A047E20E1&compId=AIMW120R045M1.pdf?ci_sign=eb65a8a826fd80ca86266faf7df04256ef0a5a60 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGCM20F60GAXKMA1
+1
 		IGCM20F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE829F27F62E9B20D5&compId=IGCM20F60GAXKMA1.pdf?ci_sign=27b86ce865154297d40f1cdb8215e2726e0102e9 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.48 EUR
7+11.8 EUR
Mindestbestellmenge: 6
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TLE42754DATMA1 TLE42754DATMA1 INFINEON TECHNOLOGIES Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...42V
auf Bestellung 2459 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
53+1.37 EUR
54+1.33 EUR
57+1.26 EUR
59+1.22 EUR
Mindestbestellmenge: 38
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CY7C199D-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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IPB330P10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.8 EUR
Mindestbestellmenge: 1000
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IPP041N04NGXKSA1 IPP041N04NGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E96C690B2E211C&compId=IPP041N04NG-DTE.pdf?ci_sign=a7d418e7844ec4329454d1b9295f50f67a9a029a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
70+1.03 EUR
79+0.92 EUR
110+0.65 EUR
116+0.62 EUR
Mindestbestellmenge: 40
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IRFB7546PBF IRFB7546PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB173E751F5EA&compId=IRFB7546PBF.pdf?ci_sign=63e6fed0b5b3c3fdc502b4567725b6b30e939ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
On-state resistance: 7.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 58nC
auf Bestellung 1289 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
70+1.03 EUR
82+0.87 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 47
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BAR6702VH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749 Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 72000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
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BSC066N06NSATMA1 BSC066N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3870DFCDF18411C&compId=BSC066N06NS-DTE.pdf?ci_sign=441f0f372dac3b7efa4853e9f29fde4aaa80c83d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD18P06PGBTMA1 SPD18P06PGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D584FDDFF1CC&compId=SPD18P06PGBTMA1-DTE.PDF?ci_sign=da6a29aaaa090540fd1b2071f208587cdcd3da3a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2424 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
56+1.29 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 52
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SPD08P06PGBTMA1 SPD08P06PGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C66FF52E31CC&compId=SPD08P06PGBTMA1-DTE.pdf?ci_sign=7b711489853b2c9a41ef3b64f3dc1316c5bde3a3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1470BV25-167BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470BV25-200BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470BV33-200BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470BV25-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470BV25-250AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
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CY7C1470BV25-250AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
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CY7C1470BV33-167AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470BV33-167BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470V25-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470V25-200BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470V25-200BZXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470V33-167AXC INFINEON TECHNOLOGIES ?docID=46217 Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470V33-167AXI INFINEON TECHNOLOGIES Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470V33-167BZI INFINEON TECHNOLOGIES Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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ISA220280C03LMDSXTMA1 INFINEON TECHNOLOGIES Infineon-ISA220280C03LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d35b32f46369 Category: Multi channel transistors
Description: ISA220280C03LMDSXTMA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.27 EUR
Mindestbestellmenge: 4000
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BB639E7904HTSA1 BB639E7904HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE79ADA519FC402A749&compId=BB639_659.pdf?ci_sign=dacf10db0e924434f744aab9cea5835f8741907f Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
auf Bestellung 2873 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
382+0.19 EUR
537+0.13 EUR
937+0.076 EUR
991+0.072 EUR
Mindestbestellmenge: 278
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A82953A1E7110B&compId=BSS670S2LH6327XTSA.pdf?ci_sign=2c6f1d2f4b0a50a6adc3480e956cf1183118c3f9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.54A
Drain-source voltage: 55V
On-state resistance: 0.65Ω
Power dissipation: 0.36W
Gate-source voltage: ±20V
Case: SOT23
auf Bestellung 2338 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
400+0.18 EUR
578+0.12 EUR
673+0.11 EUR
1053+0.068 EUR
1114+0.064 EUR
Mindestbestellmenge: 278
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IPP040N06NXKSA1 INFINEON TECHNOLOGIES Infineon-IPP040N06N-DS-v02_02-en.pdf?fileId=db3a30433727a44301372bbaa5ad4942 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
100+1.13 EUR
Mindestbestellmenge: 100
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IPP030N10N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.09 EUR
150+3.69 EUR
Mindestbestellmenge: 50
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BC850BWH6327XTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.049 EUR
Mindestbestellmenge: 3000
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ISA170170N04LMDSXTMA1 INFINEON TECHNOLOGIES Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.31 EUR
Mindestbestellmenge: 4000
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IPP014N06NF2SAKMA2 INFINEON TECHNOLOGIES Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
50+2.59 EUR
200+2.33 EUR
Mindestbestellmenge: 50
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IPP055N08NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f6f7d91513e6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 80V; 99A; 107W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 80V
Drain current: 99A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)
100+1.24 EUR
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GS-EVB-HB-0650603B-HD INFINEON TECHNOLOGIES Category: Integrated circuits - Unclassified
Description: GS-EVB-HB-0650603B-HD
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+304.33 EUR
2+273.9 EUR
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TC299TX128F300SBCKXUMA1 INFINEON TECHNOLOGIES Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Category: Integrated circuits - Unclassified
Description: TC299TX128F300SBCKXUMA1
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
500+81.98 EUR
Mindestbestellmenge: 500
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IPA60R400CEXKSA1 IPA60R400CEXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D5CFAA7B11BF&compId=IPA60R400CE-DTE.pdf?ci_sign=e5e1233d9c0593ec69716be1ffa0f326d68ab466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.4Ω
Drain current: 10.3A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 600V
Kind of package: tube
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
46+1.56 EUR
49+1.47 EUR
Mindestbestellmenge: 42
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SGP15N120XKSA1 INFINEON TECHNOLOGIES SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.85 EUR
150+4.36 EUR
Mindestbestellmenge: 50
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BC857CE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.044 EUR
Mindestbestellmenge: 10000
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BC857CWH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.044 EUR
Mindestbestellmenge: 3000
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA71791143A11C&compId=IPB015N08N5-DTE.pdf?ci_sign=3b3d54fa795afd84f282f91371f0c9b7e9caecb8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPD380P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 35A; 125W; DPAK,TO252
Gate charge: 63nC
On-state resistance: 38mΩ
Gate-source voltage: 20V
Drain current: 35A
Drain-source voltage: 60V
Power dissipation: 125W
Case: DPAK; TO252
Kind of channel: enhancement
Technology: MOSFET
Polarisation: P
Type of transistor: P-MOSFET
Mounting: SMD
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.94 EUR
Mindestbestellmenge: 2500
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BSC039N06NS BSC039N06NS INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E2FB308FA11C&compId=BSC039N06NS-DTE.pdf?ci_sign=e8ff53d8e981086458ea46f47acf12b3c94b9cae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BAA359ED1B753D7&compId=ESD101B102ELSE6327XTSA1.pdf?ci_sign=2c0aaca5d684a303278d2e5aa520ffa4f7989402 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape; ESD
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: TSSLP-2-4
Type of diode: TVS
Leakage current: 20nA
Max. forward impulse current: 2A
Max. off-state voltage: 5.5V
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
auf Bestellung 8252 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
447+0.16 EUR
511+0.14 EUR
589+0.12 EUR
642+0.11 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 358
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ESD101B102ELE6327XTMA1 INFINEON TECHNOLOGIES ESD101_B1_02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.13 EUR
Mindestbestellmenge: 15000
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IRFS7537TRLPBF INFINEON TECHNOLOGIES irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS443P BTS443P INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0475774F78AF1A6F5005056AB5A8F&compId=BTS443P_DS_v10.pdf?ci_sign=0db5963a0c6bf5177e49dfb2e922acd92c0ac2f3 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Number of channels: 1
Output current: 2.3A
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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BTS443PAUMA1 INFINEON TECHNOLOGIES Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 47500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.73 EUR
Mindestbestellmenge: 2500
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IRFB3004PBF IRFB3004PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6A3F1A6F5005056AB5A8F&compId=irfs3004pbf.pdf?ci_sign=a529c6af990cdf3405d34e5db519c1ceb8d80a66 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 1.75mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 380W
Produkt ist nicht verfügbar
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IPW60R017C7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 109A; 446W; TO247; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 109A
Power dissipation: 446W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
30+19.32 EUR
Mindestbestellmenge: 30
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1ED020I12B2XUMA1 INFINEON TECHNOLOGIES Infineon-1ED020I12-B2-DataSheet-v02_02-EN.pdf?fileId=db3a304333227b5e013344bf16f84ca6 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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FF200R12KS4HOSA1 INFINEON TECHNOLOGIES FF200R12KS4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.4kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FF400R12KE3HOSA1 INFINEON TECHNOLOGIES FF400R12KE3.pdf Category: IGBT modules
Description: FF400R12KE3HOSA1
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
10+259.44 EUR
Mindestbestellmenge: 10
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IPA60R230P6XKSA1 IPA60R230P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CD74818F51BF&compId=IPA60R230P6-DTE.pdf?ci_sign=4eded1c8a7f006aee967ee72659e80ba3017b516 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Technology: CoolMOS™ P6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.23Ω
Drain current: 16.8A
Gate-source voltage: ±20V
Power dissipation: 33W
Drain-source voltage: 600V
Kind of package: tube
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.26 EUR
36+2.03 EUR
38+1.92 EUR
250+1.87 EUR
Mindestbestellmenge: 22
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IPA60R170CFD7XKSA1 IPA60R170CFD7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD81071412BAE0C7&compId=IPA60R170CFD7.pdf?ci_sign=472c564ec0979ccb100660718b6ed72e21d10351 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 51A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 28nC
Pulsed drain current: 51A
Produkt ist nicht verfügbar
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BSC155N06NDATMA1 INFINEON TECHNOLOGIES Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec Category: Transistors - Unclassified
Description: BSC155N06NDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.61 EUR
Mindestbestellmenge: 5000
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CY8C21323-24PVXI INFINEON TECHNOLOGIES Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: 8-bit PIC family
Description: IC: PIC microcontroller; 4096B; 24MHz; SMD; SSOP20; -40÷85°C
Type of integrated circuit: PIC microcontroller
Integrated circuit features: PoR; PWM
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Number of 8bit timers: 1
Number of 16bit timers: 1
Number of capacitive channels: 8
Number of inputs/outputs: 16
Program memory: 4096B
Clock frequency: 24MHz
auf Bestellung 3298 Stücke:
Lieferzeit 14-21 Tag (e)
66+3.65 EUR
Mindestbestellmenge: 66
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CY8C21323-24PVXIT INFINEON TECHNOLOGIES Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Integrated circuits - Unclassified
Description: CY8C21323-24PVXIT
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+3.65 EUR
Mindestbestellmenge: 2000
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BTS3118N pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE6A74DEE17EFA8&compId=BTS3118N-DTE.pdf?ci_sign=ed8e0bc251d8224f31078d388e1d4a9a9f68b84f
BTS3118N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 1908 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
51+1.42 EUR
55+1.3 EUR
100+1.22 EUR
Mindestbestellmenge: 38
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IMW120R045M1XKSA1 Infineon-IMW120R045M1-DataSheet-v02_03-EN.pdf?fileId=5546d46269bda8df0169de34fd2f3a3b
IMW120R045M1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -10...20V
On-state resistance: 59mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AIMW120R045M1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C05C2A047E20E1&compId=AIMW120R045M1.pdf?ci_sign=eb65a8a826fd80ca86266faf7df04256ef0a5a60
AIMW120R045M1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGCM20F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE829F27F62E9B20D5&compId=IGCM20F60GAXKMA1.pdf?ci_sign=27b86ce865154297d40f1cdb8215e2726e0102e9
IGCM20F60GAXKMA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.48 EUR
7+11.8 EUR
Mindestbestellmenge: 6
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TLE42754DATMA1 Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab
TLE42754DATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...42V
auf Bestellung 2459 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
53+1.37 EUR
54+1.33 EUR
57+1.26 EUR
59+1.22 EUR
Mindestbestellmenge: 38
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CY7C199D-10VXIT Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.8 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPP041N04NGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E96C690B2E211C&compId=IPP041N04NG-DTE.pdf?ci_sign=a7d418e7844ec4329454d1b9295f50f67a9a029a
IPP041N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
70+1.03 EUR
79+0.92 EUR
110+0.65 EUR
116+0.62 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7546PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB173E751F5EA&compId=IRFB7546PBF.pdf?ci_sign=63e6fed0b5b3c3fdc502b4567725b6b30e939ea6
IRFB7546PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
On-state resistance: 7.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 58nC
auf Bestellung 1289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
70+1.03 EUR
82+0.87 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
BAR6702VH6327XTSA1 Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 72000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BSC066N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3870DFCDF18411C&compId=BSC066N06NS-DTE.pdf?ci_sign=441f0f372dac3b7efa4853e9f29fde4aaa80c83d
BSC066N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD18P06PGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D584FDDFF1CC&compId=SPD18P06PGBTMA1-DTE.PDF?ci_sign=da6a29aaaa090540fd1b2071f208587cdcd3da3a
SPD18P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2424 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
56+1.29 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
SPD08P06PGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C66FF52E31CC&compId=SPD08P06PGBTMA1-DTE.pdf?ci_sign=7b711489853b2c9a41ef3b64f3dc1316c5bde3a3
SPD08P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV25-167BZXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV25-200BZXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV33-200BZXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV25-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV25-250AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV25-250AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV33-167AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV33-167BZI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V25-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V25-200BZI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V25-200BZXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V33-167AXC ?docID=46217 Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V33-167AXI Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V33-167BZI Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISA220280C03LMDSXTMA1 Infineon-ISA220280C03LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d35b32f46369
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: ISA220280C03LMDSXTMA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.27 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
BB639E7904HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79ADA519FC402A749&compId=BB639_659.pdf?ci_sign=dacf10db0e924434f744aab9cea5835f8741907f
BB639E7904HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
auf Bestellung 2873 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
382+0.19 EUR
537+0.13 EUR
937+0.076 EUR
991+0.072 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BSS670S2LH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A82953A1E7110B&compId=BSS670S2LH6327XTSA.pdf?ci_sign=2c6f1d2f4b0a50a6adc3480e956cf1183118c3f9
BSS670S2LH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.54A
Drain-source voltage: 55V
On-state resistance: 0.65Ω
Power dissipation: 0.36W
Gate-source voltage: ±20V
Case: SOT23
auf Bestellung 2338 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
400+0.18 EUR
578+0.12 EUR
673+0.11 EUR
1053+0.068 EUR
1114+0.064 EUR
Mindestbestellmenge: 278
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IPP040N06NXKSA1 Infineon-IPP040N06N-DS-v02_02-en.pdf?fileId=db3a30433727a44301372bbaa5ad4942
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.13 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N10N5XKSA1 Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+4.09 EUR
150+3.69 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BC850BWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.049 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ISA170170N04LMDSXTMA1 Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.31 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
IPP014N06NF2SAKMA2 Infineon-IPP014N06NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c80f4d3290180fd60965a3c7a
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.59 EUR
200+2.33 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IPP055N08NF2SAKMA1 Infineon-IPP055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f6f7d91513e6
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 80V; 99A; 107W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 80V
Drain current: 99A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.24 EUR
Mindestbestellmenge: 100
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GS-EVB-HB-0650603B-HD
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: GS-EVB-HB-0650603B-HD
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+304.33 EUR
2+273.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TC299TX128F300SBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: TC299TX128F300SBCKXUMA1
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+81.98 EUR
Mindestbestellmenge: 500
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IPA60R400CEXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D5CFAA7B11BF&compId=IPA60R400CE-DTE.pdf?ci_sign=e5e1233d9c0593ec69716be1ffa0f326d68ab466
IPA60R400CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.4Ω
Drain current: 10.3A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 600V
Kind of package: tube
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
46+1.56 EUR
49+1.47 EUR
Mindestbestellmenge: 42
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SGP15N120XKSA1 SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+4.85 EUR
150+4.36 EUR
Mindestbestellmenge: 50
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BC857CE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.044 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
BC857CWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.044 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPB015N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA71791143A11C&compId=IPB015N08N5-DTE.pdf?ci_sign=3b3d54fa795afd84f282f91371f0c9b7e9caecb8
IPB015N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPD380P06NMATMA1 Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 35A; 125W; DPAK,TO252
Gate charge: 63nC
On-state resistance: 38mΩ
Gate-source voltage: 20V
Drain current: 35A
Drain-source voltage: 60V
Power dissipation: 125W
Case: DPAK; TO252
Kind of channel: enhancement
Technology: MOSFET
Polarisation: P
Type of transistor: P-MOSFET
Mounting: SMD
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.94 EUR
Mindestbestellmenge: 2500
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BSC039N06NS pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E2FB308FA11C&compId=BSC039N06NS-DTE.pdf?ci_sign=e8ff53d8e981086458ea46f47acf12b3c94b9cae
BSC039N06NS
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD101B102ELSE6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BAA359ED1B753D7&compId=ESD101B102ELSE6327XTSA1.pdf?ci_sign=2c0aaca5d684a303278d2e5aa520ffa4f7989402
ESD101B102ELSE6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape; ESD
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: TSSLP-2-4
Type of diode: TVS
Leakage current: 20nA
Max. forward impulse current: 2A
Max. off-state voltage: 5.5V
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
auf Bestellung 8252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
447+0.16 EUR
511+0.14 EUR
589+0.12 EUR
642+0.11 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 358
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ESD101B102ELE6327XTMA1 ESD101_B1_02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.13 EUR
Mindestbestellmenge: 15000
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IRFS7537TRLPBF irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS443P description pVersion=0046&contRep=ZT&docId=E1C0475774F78AF1A6F5005056AB5A8F&compId=BTS443P_DS_v10.pdf?ci_sign=0db5963a0c6bf5177e49dfb2e922acd92c0ac2f3
BTS443P
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Number of channels: 1
Output current: 2.3A
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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BTS443PAUMA1 Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 47500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.73 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3004PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6A3F1A6F5005056AB5A8F&compId=irfs3004pbf.pdf?ci_sign=a529c6af990cdf3405d34e5db519c1ceb8d80a66
IRFB3004PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 1.75mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 380W
Produkt ist nicht verfügbar
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IPW60R017C7XKSA1 Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 109A; 446W; TO247; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 109A
Power dissipation: 446W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+19.32 EUR
Mindestbestellmenge: 30
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1ED020I12B2XUMA1 Infineon-1ED020I12-B2-DataSheet-v02_02-EN.pdf?fileId=db3a304333227b5e013344bf16f84ca6
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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FF200R12KS4HOSA1 FF200R12KS4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.4kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FF400R12KE3HOSA1 FF400R12KE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: FF400R12KE3HOSA1
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+259.44 EUR
Mindestbestellmenge: 10
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IPA60R230P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CD74818F51BF&compId=IPA60R230P6-DTE.pdf?ci_sign=4eded1c8a7f006aee967ee72659e80ba3017b516
IPA60R230P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Technology: CoolMOS™ P6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.23Ω
Drain current: 16.8A
Gate-source voltage: ±20V
Power dissipation: 33W
Drain-source voltage: 600V
Kind of package: tube
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.26 EUR
36+2.03 EUR
38+1.92 EUR
250+1.87 EUR
Mindestbestellmenge: 22
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IPA60R170CFD7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD81071412BAE0C7&compId=IPA60R170CFD7.pdf?ci_sign=472c564ec0979ccb100660718b6ed72e21d10351
IPA60R170CFD7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 51A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 28nC
Pulsed drain current: 51A
Produkt ist nicht verfügbar
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BSC155N06NDATMA1 Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BSC155N06NDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.61 EUR
Mindestbestellmenge: 5000
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CY8C21323-24PVXI description Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: 8-bit PIC family
Description: IC: PIC microcontroller; 4096B; 24MHz; SMD; SSOP20; -40÷85°C
Type of integrated circuit: PIC microcontroller
Integrated circuit features: PoR; PWM
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Number of 8bit timers: 1
Number of 16bit timers: 1
Number of capacitive channels: 8
Number of inputs/outputs: 16
Program memory: 4096B
Clock frequency: 24MHz
auf Bestellung 3298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+3.65 EUR
Mindestbestellmenge: 66
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CY8C21323-24PVXIT Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C21323-24PVXIT
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+3.65 EUR
Mindestbestellmenge: 2000
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