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SI4435DYTRPBF SI4435DYTRPBF INFINEON TECHNOLOGIES si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2438 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
92+0.78 EUR
126+0.57 EUR
144+0.5 EUR
250+0.43 EUR
500+0.39 EUR
Mindestbestellmenge: 65
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IPD70R900P7SAUMA1 IPD70R900P7SAUMA1 INFINEON TECHNOLOGIES IPD70R900P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R900P7SATMA1 IPN70R900P7SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA526BEF5A6143&compId=IPN70R900P7S.pdf?ci_sign=003efb79197d315493859738eb83e97ee6904935 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Mounting: SMD
Polarisation: unipolar
Gate charge: 6.8nC
On-state resistance: 0.9Ω
Drain current: 3.5A
Power dissipation: 6.5W
Gate-source voltage: ±16V
Drain-source voltage: 700V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-SOT223
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2C1BE091BC11C&compId=BSC035N10NS5-DTE.pdf?ci_sign=589da9a4f76ac36f6caf01e2ad3007e47efb0526 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSO207PHXUMA1 BSO207PHXUMA1 INFINEON TECHNOLOGIES BSO207PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5A
Drain-source voltage: -20V
On-state resistance: 45mΩ
Power dissipation: 1.6W
auf Bestellung 2211 Stücke:
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218+0.33 EUR
222+0.32 EUR
Mindestbestellmenge: 218
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BSO211PHXUMA1 BSO211PHXUMA1 INFINEON TECHNOLOGIES BSO211PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.6A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 1.6W
auf Bestellung 2320 Stücke:
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173+0.41 EUR
190+0.38 EUR
205+0.35 EUR
225+0.32 EUR
Mindestbestellmenge: 173
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XMC750 WATT MOTOR CONTROL KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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IPB037N06N3GATMA1 IPB037N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E74A0389411C&compId=IPB037N06N3G-DTE.pdf?ci_sign=1cbda32d942d894f603cf1626a1387244c7938ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP410N30NAKSA1 IPP410N30NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC940FD466611C&compId=IPP410N30N-DTE.pdf?ci_sign=91131cadec2f63016d12e8ee56b378c8247df703 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 44A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 14 Stücke:
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7+10.74 EUR
10+7.29 EUR
11+6.89 EUR
Mindestbestellmenge: 7
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CY7C1354C-166AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXCT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1356C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1360C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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BSZ040N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 69W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 69W
Gate-source voltage: 20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 6.6nC
Kind of channel: enhancement
Electrical mounting: SMT
Polarisation: N
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.63 EUR
Mindestbestellmenge: 5000
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TD500N16KOFHPSA1 TD500N16KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F074C00DE6469&compId=TD500N16KOF.pdf?ci_sign=a76074aa4c25a809d85ac6baf5ea26212c9adddb Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF TD500N18KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F09F7C6E98469&compId=TD500N18KOF.pdf?ci_sign=b5a5084591cd6c5813d9dbba92c7a98591c03055 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TT570N16KOFHPSA2 TT570N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEA028F7668469&compId=TT570N16KOF.pdf?ci_sign=836c3171bb9fd8f725f7e3605bd91df313dc3657 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ500N18KOF TZ500N18KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEDB421FFB2469&compId=TZ500N18KOF.pdf?ci_sign=f3bce80d1edaa89ee6344fdd3d38926f29f3b8f8 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N16KOFHPSA2 TT500N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9BDBDF1BC469&compId=TT500N16KOF.pdf?ci_sign=34f28fc7e78abf45d9c7c865df8bb681c3dbe1e0 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ600N16KOF TZ600N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEE563BB628469&compId=TZ600N16KOF.pdf?ci_sign=771810b9df81adea268ef9a17ac11c2ffb879b45 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N14KOFHPSA2 TT500N14KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9A079D1DE469&compId=TT500N14KOF.pdf?ci_sign=b0aadc52c9d5d3fdf46bc40fc9a88cd19f84b3f5 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ500N16KOF TZ500N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CED8FCD3EB6469&compId=TZ500N16KOF.pdf?ci_sign=e342fac28e657edb4f639ad89f6a091993a51e35 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFR5410TRRPBF IRFR5410TRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR191E6327 BCR191E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C577575678A469&compId=BCR191.pdf?ci_sign=95bdeac9f9d591f952a3f1e72481882e571b369f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
Frequency: 200MHz
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
225+0.31 EUR
Mindestbestellmenge: 225
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IRG4PSH71UDPBF IRG4PSH71UDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D7D64A4F08F1A303005056AB0C4F&compId=irg4psh71udpbf.pdf?ci_sign=289c39444487fc58635bd7d1764bde616b177c4c description Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IR21834STRPBF INFINEON TECHNOLOGIES ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.09 EUR
Mindestbestellmenge: 2500
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IRFB52N15DPBF IRFB52N15DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A8BF1A6F5005056AB5A8F&compId=irfs52n15d.pdf?ci_sign=dd3f590212d2c22ca8bc1539635902e7d0156b8c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF100B201 IRF100B201 INFINEON TECHNOLOGIES IRF100x201.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1028 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
41+1.77 EUR
50+1.56 EUR
100+1.47 EUR
250+1.32 EUR
500+1.23 EUR
1000+1.13 EUR
Mindestbestellmenge: 35
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BSS131H6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD637F5D40575EA&compId=BSS131.pdf?ci_sign=3fa845932928938a385fc3c5d60733bac622727b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
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BCR10PNH6327 BCR10PNH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869757B66B1A6469&compId=BCR10PNH6327.pdf?ci_sign=b2c2746e16a6aca8015036aa14272b1c552f7db2 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Kind of transistor: BRT; complementary pair
Frequency: 130MHz
Type of transistor: NPN / PNP
Polarisation: bipolar
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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AIKQ120N60CTXKSA1 AIKQ120N60CTXKSA1 INFINEON TECHNOLOGIES AIKQ120N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Produkt ist nicht verfügbar
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IPD25N06S4L30ATMA2 INFINEON TECHNOLOGIES Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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IRFS4227TRLPBF IRFS4227TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C8327D1226F1A303005056AB0C4F&compId=irfs4227pbf.pdf?ci_sign=ba7e3a94bc4be1c6dca7d3cb57bd4f88452d247b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4410TRLPBF IRFS4410TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C8C46B5B22F1A303005056AB0C4F&compId=irfs4410pbf.pdf?ci_sign=ccc955e36a01f6495227bf94e93c384689de9ff9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Mounting: SMD
Polarisation: unipolar
Power dissipation: 250W
Drain current: 96A
Drain-source voltage: 100V
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
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IPT004N03LATMA1 IPT004N03LATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60454DEB0411C&compId=IPT004N03L-DTE.pdf?ci_sign=ef66a83d0f89948fa0e0107be067086fb28ef786 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
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IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBD7BE2A1DA143&compId=IPW60R037P7.pdf?ci_sign=a0965196f457b612a877e2bb887906e08fdd6397 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IPP60R190C6XKSA1 IPP60R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944516ACCA91BF&compId=IPP60R190C6-DTE.pdf?ci_sign=656d49e416ee0ee069a2849faaa19764993ed0e3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R099C7XKSA1 IPP60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A79FD13B11BF&compId=IPP60R099C7-DTE.pdf?ci_sign=a94abcc1c797aaf690d8a6def9357586264bf546 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R190E6XKSA1 IPP60R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59467B878FD31BF&compId=IPP60R190E6-DTE.pdf?ci_sign=e6d37a5db910c45a9b2ab0cc867290efd25d278b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB260NPBF IRFB260NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B69CF1A6F5005056AB5A8F&compId=irfb260n.pdf?ci_sign=78a2a1733f619070b086e75b575a83328dc7aeca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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BC817UE6327HTSA1 BC817UE6327HTSA1 INFINEON TECHNOLOGIES BC817UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
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193+0.37 EUR
207+0.35 EUR
225+0.32 EUR
293+0.24 EUR
500+0.16 EUR
1000+0.13 EUR
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1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 INFINEON TECHNOLOGIES Infineon-1EDI60N12AF-DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e5da08f372a Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Case: PG-DSO-8
Kind of package: reel; tape
Mounting: SMD
Protection: undervoltage UVP
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: single transistor
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BBY5302VH6327XTSA1 INFINEON TECHNOLOGIES INFNS15715-1.pdf?t.download=true&u=5oefqw Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Mounting: SMD
Max. off-state voltage: 6V
Load current: 20mA
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Case: SC79
Produkt ist nicht verfügbar
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XMC1100T038X0064ABXUMA1 XMC1100T038X0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-38
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
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XMC1100T016X0064ABXUMA1 XMC1100T016X0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 6
Number of inputs/outputs: 14
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IRS2103STRPBF INFINEON TECHNOLOGIES irs2103.pdf?fileId=5546d462533600a4015356762b71279f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Kind of package: reel; tape
Case: SO8
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BSD223PH6327XTSA1 BSD223PH6327XTSA1 INFINEON TECHNOLOGIES BSD223PH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
auf Bestellung 1819 Stücke:
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296+0.24 EUR
428+0.17 EUR
506+0.14 EUR
603+0.12 EUR
695+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 209
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BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 INFINEON TECHNOLOGIES BSL307SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5.5A
Drain-source voltage: -30V
On-state resistance: 43mΩ
Power dissipation: 2W
auf Bestellung 1081 Stücke:
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105+0.69 EUR
144+0.5 EUR
197+0.36 EUR
250+0.32 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 105
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IPA70R360P7SXKSA1 IPA70R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
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87+0.83 EUR
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IPAN70R360P7SXKSA1 IPAN70R360P7SXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC97987B2DB3D1&compId=IPAN70R360P7S.pdf?ci_sign=446f33d5ce1d514e84e92d4725288808af0d1e4f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 346 Stücke:
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36+1.99 EUR
40+1.83 EUR
48+1.52 EUR
71+1.02 EUR
75+0.96 EUR
100+0.93 EUR
Mindestbestellmenge: 36
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IPN70R360P7SATMA1 IPN70R360P7SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA4AC57BCA0143&compId=IPN70R360P7S.pdf?ci_sign=5821d17ce2d7c8fad36de387f6604f90da9e4af3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB41888EDB0143&compId=IPS70R360P7S.pdf?ci_sign=7e11cc65c221ebcf878ecdb01d4217297052c125 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5433F95CF8BF&compId=IAUT150N10S5N035.pdf?ci_sign=6a528e190c175351cabbebf2a2a8afeaca2b9413 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IRS21271STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBDB7506BDC0DA0DC&compId=IRS212XXSTRPBf.pdf?ci_sign=e616bf26360d656e90e728b62df1e0f3df09dc73 Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
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IRS2183STRPBF INFINEON TECHNOLOGIES irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
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Mindestbestellmenge: 2500
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IPA60R060P7 IPA60R060P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1EDC125262749&compId=IPA60R060P7.pdf?ci_sign=cb246ca29be37a4051586f7d55d95def1bcf574f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R190C6XKSA1 IPA60R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594AE76D73071BF&compId=IPA60R190C6-DTE.pdf?ci_sign=adbe15ba42c81380a51302cc5c2c3d6eae0070c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2438 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
92+0.78 EUR
126+0.57 EUR
144+0.5 EUR
250+0.43 EUR
500+0.39 EUR
Mindestbestellmenge: 65
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IPD70R900P7SAUMA1 IPD70R900P7S.pdf
IPD70R900P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R900P7SATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA526BEF5A6143&compId=IPN70R900P7S.pdf?ci_sign=003efb79197d315493859738eb83e97ee6904935
IPN70R900P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Mounting: SMD
Polarisation: unipolar
Gate charge: 6.8nC
On-state resistance: 0.9Ω
Drain current: 3.5A
Power dissipation: 6.5W
Gate-source voltage: ±16V
Drain-source voltage: 700V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: PG-SOT223
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC035N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2C1BE091BC11C&compId=BSC035N10NS5-DTE.pdf?ci_sign=589da9a4f76ac36f6caf01e2ad3007e47efb0526
BSC035N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSO207PHXUMA1 BSO207PHXUMA1-dte.pdf
BSO207PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5A
Drain-source voltage: -20V
On-state resistance: 45mΩ
Power dissipation: 1.6W
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
222+0.32 EUR
Mindestbestellmenge: 218
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BSO211PHXUMA1 BSO211PHXUMA1-dte.pdf
BSO211PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.6A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 1.6W
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
190+0.38 EUR
205+0.35 EUR
225+0.32 EUR
Mindestbestellmenge: 173
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XMC750 WATT MOTOR CONTROL KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
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IPB037N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E74A0389411C&compId=IPB037N06N3G-DTE.pdf?ci_sign=1cbda32d942d894f603cf1626a1387244c7938ad
IPB037N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP410N30NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC940FD466611C&compId=IPP410N30N-DTE.pdf?ci_sign=91131cadec2f63016d12e8ee56b378c8247df703
IPP410N30NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 44A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.74 EUR
10+7.29 EUR
11+6.89 EUR
Mindestbestellmenge: 7
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CY7C1354C-166AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXCT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1356C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1360C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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BSZ040N06LS5ATMA1 Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 69W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 69W
Gate-source voltage: 20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 6.6nC
Kind of channel: enhancement
Electrical mounting: SMT
Polarisation: N
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.63 EUR
Mindestbestellmenge: 5000
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TD500N16KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F074C00DE6469&compId=TD500N16KOF.pdf?ci_sign=a76074aa4c25a809d85ac6baf5ea26212c9adddb
TD500N16KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F09F7C6E98469&compId=TD500N18KOF.pdf?ci_sign=b5a5084591cd6c5813d9dbba92c7a98591c03055
TD500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TT570N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEA028F7668469&compId=TT570N16KOF.pdf?ci_sign=836c3171bb9fd8f725f7e3605bd91df313dc3657
TT570N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N18KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEDB421FFB2469&compId=TZ500N18KOF.pdf?ci_sign=f3bce80d1edaa89ee6344fdd3d38926f29f3b8f8
TZ500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9BDBDF1BC469&compId=TT500N16KOF.pdf?ci_sign=34f28fc7e78abf45d9c7c865df8bb681c3dbe1e0
TT500N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ600N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEE563BB628469&compId=TZ600N16KOF.pdf?ci_sign=771810b9df81adea268ef9a17ac11c2ffb879b45
TZ600N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N14KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9A079D1DE469&compId=TT500N14KOF.pdf?ci_sign=b0aadc52c9d5d3fdf46bc40fc9a88cd19f84b3f5
TT500N14KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CED8FCD3EB6469&compId=TZ500N16KOF.pdf?ci_sign=e342fac28e657edb4f639ad89f6a091993a51e35
TZ500N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFR5410TRRPBF pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831
IRFR5410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR191E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C577575678A469&compId=BCR191.pdf?ci_sign=95bdeac9f9d591f952a3f1e72481882e571b369f
BCR191E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
Frequency: 200MHz
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
225+0.31 EUR
Mindestbestellmenge: 225
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IRG4PSH71UDPBF description pVersion=0046&contRep=ZT&docId=E221D7D64A4F08F1A303005056AB0C4F&compId=irg4psh71udpbf.pdf?ci_sign=289c39444487fc58635bd7d1764bde616b177c4c
IRG4PSH71UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IR21834STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.09 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFB52N15DPBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A8BF1A6F5005056AB5A8F&compId=irfs52n15d.pdf?ci_sign=dd3f590212d2c22ca8bc1539635902e7d0156b8c
IRFB52N15DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF100B201 IRF100x201.pdf
IRF100B201
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1028 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
41+1.77 EUR
50+1.56 EUR
100+1.47 EUR
250+1.32 EUR
500+1.23 EUR
1000+1.13 EUR
Mindestbestellmenge: 35
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BSS131H6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD637F5D40575EA&compId=BSS131.pdf?ci_sign=3fa845932928938a385fc3c5d60733bac622727b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR10PNH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869757B66B1A6469&compId=BCR10PNH6327.pdf?ci_sign=b2c2746e16a6aca8015036aa14272b1c552f7db2
BCR10PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Kind of transistor: BRT; complementary pair
Frequency: 130MHz
Type of transistor: NPN / PNP
Polarisation: bipolar
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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AIKQ120N60CTXKSA1 AIKQ120N60CT.pdf
AIKQ120N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Produkt ist nicht verfügbar
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IPD25N06S4L30ATMA2 Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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IRFS4227TRLPBF pVersion=0046&contRep=ZT&docId=E221C8327D1226F1A303005056AB0C4F&compId=irfs4227pbf.pdf?ci_sign=ba7e3a94bc4be1c6dca7d3cb57bd4f88452d247b
IRFS4227TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4410TRLPBF pVersion=0046&contRep=ZT&docId=E221C8C46B5B22F1A303005056AB0C4F&compId=irfs4410pbf.pdf?ci_sign=ccc955e36a01f6495227bf94e93c384689de9ff9
IRFS4410TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Mounting: SMD
Polarisation: unipolar
Power dissipation: 250W
Drain current: 96A
Drain-source voltage: 100V
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT004N03LATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60454DEB0411C&compId=IPT004N03L-DTE.pdf?ci_sign=ef66a83d0f89948fa0e0107be067086fb28ef786
IPT004N03LATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R031CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937
IPW60R031CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.2 EUR
10+11.38 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R037P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBD7BE2A1DA143&compId=IPW60R037P7.pdf?ci_sign=a0965196f457b612a877e2bb887906e08fdd6397
IPW60R037P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.28 EUR
11+6.98 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944516ACCA91BF&compId=IPP60R190C6-DTE.pdf?ci_sign=656d49e416ee0ee069a2849faaa19764993ed0e3
IPP60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
Mindestbestellmenge: 19
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IPP60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A79FD13B11BF&compId=IPP60R099C7-DTE.pdf?ci_sign=a94abcc1c797aaf690d8a6def9357586264bf546
IPP60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59467B878FD31BF&compId=IPP60R190E6-DTE.pdf?ci_sign=e6d37a5db910c45a9b2ab0cc867290efd25d278b
IPP60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB260NPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B69CF1A6F5005056AB5A8F&compId=irfb260n.pdf?ci_sign=78a2a1733f619070b086e75b575a83328dc7aeca
IRFB260NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
45+1.6 EUR
48+1.49 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BC817UE6327HTSA1 BC817UE6327.pdf
BC817UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2582 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
207+0.35 EUR
225+0.32 EUR
293+0.24 EUR
500+0.16 EUR
1000+0.13 EUR
Mindestbestellmenge: 193
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1EDI60N12AFXUMA1 Infineon-1EDI60N12AF-DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e5da08f372a
1EDI60N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Case: PG-DSO-8
Kind of package: reel; tape
Mounting: SMD
Protection: undervoltage UVP
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: single transistor
Produkt ist nicht verfügbar
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BBY5302VH6327XTSA1 INFNS15715-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Mounting: SMD
Max. off-state voltage: 6V
Load current: 20mA
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Case: SC79
Produkt ist nicht verfügbar
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XMC1100T038X0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T038X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-38
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
Produkt ist nicht verfügbar
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XMC1100T016X0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T016X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 6
Number of inputs/outputs: 14
Produkt ist nicht verfügbar
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IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Produkt ist nicht verfügbar
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BSD223PH6327XTSA1 BSD223PH6327XTSA1-DTE.pdf
BSD223PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
296+0.24 EUR
428+0.17 EUR
506+0.14 EUR
603+0.12 EUR
695+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 209
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BSL307SPH6327XTSA1 BSL307SPH6327XTSA1-DTE.pdf
BSL307SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5.5A
Drain-source voltage: -30V
On-state resistance: 43mΩ
Power dissipation: 2W
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
144+0.5 EUR
197+0.36 EUR
250+0.32 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
IPA70R360P7SXKSA1 Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77
IPA70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
87+0.83 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R360P7SXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC97987B2DB3D1&compId=IPAN70R360P7S.pdf?ci_sign=446f33d5ce1d514e84e92d4725288808af0d1e4f
IPAN70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
40+1.83 EUR
48+1.52 EUR
71+1.02 EUR
75+0.96 EUR
100+0.93 EUR
Mindestbestellmenge: 36
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IPN70R360P7SATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA4AC57BCA0143&compId=IPN70R360P7S.pdf?ci_sign=5821d17ce2d7c8fad36de387f6604f90da9e4af3
IPN70R360P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPS70R360P7SAKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB41888EDB0143&compId=IPS70R360P7S.pdf?ci_sign=7e11cc65c221ebcf878ecdb01d4217297052c125
IPS70R360P7SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5433F95CF8BF&compId=IAUT150N10S5N035.pdf?ci_sign=6a528e190c175351cabbebf2a2a8afeaca2b9413
IAUT150N10S5N035ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRS21271STRPBF pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBDB7506BDC0DA0DC&compId=IRS212XXSTRPBf.pdf?ci_sign=e616bf26360d656e90e728b62df1e0f3df09dc73
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.46 EUR
Mindestbestellmenge: 2500
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IPA60R060P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1EDC125262749&compId=IPA60R060P7.pdf?ci_sign=cb246ca29be37a4051586f7d55d95def1bcf574f
IPA60R060P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594AE76D73071BF&compId=IPA60R190C6-DTE.pdf?ci_sign=adbe15ba42c81380a51302cc5c2c3d6eae0070c3
IPA60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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