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S28HS02GTFPBHV050 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Produkt ist nicht verfügbar
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S28HS02GTFPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
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IPA50R140CPXKSA1 IPA50R140CPXKSA1 INFINEON TECHNOLOGIES IPA50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 29 Stücke:
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14+5.15 EUR
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IPP50R140CPXKSA1 IPP50R140CPXKSA1 INFINEON TECHNOLOGIES IPP50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
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14+5.26 EUR
16+4.73 EUR
17+4.38 EUR
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IKW75N65RH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 240 Stücke:
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240+6.51 EUR
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IKW75N65SS5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 480 Stücke:
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240+10.15 EUR
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IKZA75N65RH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 480 Stücke:
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240+7.11 EUR
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IRF9952TRPBF IRF9952TRPBF INFINEON TECHNOLOGIES irf9952pbf.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Case: SO8
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
On-state resistance: 0.1/0.25Ω
Power dissipation: 2W
Drain current: 3.5/-2.3A
Gate-source voltage: ±30V
Drain-source voltage: 30/-30V
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SPW16N50C3FKSA1 INFINEON TECHNOLOGIES SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 16A; 160W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 16A
Power dissipation: 160W
Case: TO247
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 66nC
Kind of channel: enhancement
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SPP08N80C3XKSA1 INFINEON TECHNOLOGIES SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
On-state resistance: 0.56Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 60nC
Produkt ist nicht verfügbar
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BCP5316H6327XTSA1 INFINEON TECHNOLOGIES bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: TO261-4
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
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1000+0.17 EUR
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IPD90N04S404ATMA1 IPD90N04S404ATMA1 INFINEON TECHNOLOGIES IPD90N04S404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 71W
Drain current: 81A
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
auf Bestellung 2294 Stücke:
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51+1.42 EUR
61+1.19 EUR
69+1.04 EUR
74+0.97 EUR
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IPB90N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 150W
Drain current: 90A
Application: automotive industry
Gate charge: 118nC
Produkt ist nicht verfügbar
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IPC90N04S5-3R6 IPC90N04S5-3R6 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 63W
Drain current: 90A
Technology: OptiMOS™ 5
Gate charge: 32.6nC
Produkt ist nicht verfügbar
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IPC90N04S5L-3R3 IPC90N04S5L-3R3 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 62W
Drain current: 90A
Technology: OptiMOS™ 5
Gate charge: 40nC
Produkt ist nicht verfügbar
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IPD90N04S304ATMA1 IPD90N04S304ATMA1 INFINEON TECHNOLOGIES IPD90N04S304.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 136W
Drain current: 90A
Technology: OptiMOS™ T
Gate charge: 60nC
Produkt ist nicht verfügbar
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IPD90N04S4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD90N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291cab92685eaa&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 71W
Drain current: 90A
Application: automotive industry
Gate charge: 60nC
Produkt ist nicht verfügbar
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SPP15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
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SPD06N60C3ATMA1 INFINEON TECHNOLOGIES SPD06N60C3_rev+2+1.pdf?fileId=db3a30433f1b26e8013f1de2f997013c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; 74W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 74W
Case: DPAK; TO252
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3910TRLPBF IRFR3910TRLPBF INFINEON TECHNOLOGIES irfr3910pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC007N04NM6ATMA1 INFINEON TECHNOLOGIES infineon-isc007n04nm6-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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5000+1.57 EUR
Mindestbestellmenge: 5000
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ISP16DP10LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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TLE49644MXTSA1 INFINEON TECHNOLOGIES Infineon-TLE4964_4M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e34e1192005 Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
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3000+0.35 EUR
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TLI49631MXTSA1 INFINEON TECHNOLOGIES Infineon-TLI4963-1M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edce0c27c7 Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 6000 Stücke:
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3000+0.23 EUR
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ESD24VS2UE6327HTSA1 ESD24VS2UE6327HTSA1 INFINEON TECHNOLOGIES ESD24VS2UE6327.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 230W; 32V; unidirectional; SOT23; reel,tape; ESD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 32V
Peak pulse power dissipation: 230W
Semiconductor structure: unidirectional
Version: ESD
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162+0.44 EUR
205+0.35 EUR
221+0.33 EUR
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IRFP7537PBF IRFP7537PBF INFINEON TECHNOLOGIES irfp7537pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 172A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 25 Stücke:
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25+2.86 EUR
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BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES BSS606NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-SOT89
Mounting: SMD
Polarisation: unipolar
On-state resistance: 90mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 3.2A
Kind of channel: enhancement
auf Bestellung 80 Stücke:
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80+0.89 EUR
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BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 INFINEON TECHNOLOGIES BSL606SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TSOP-6
Mounting: SMD
Polarisation: unipolar
On-state resistance: 95mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 4.5A
Kind of channel: enhancement
auf Bestellung 4585 Stücke:
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109+0.66 EUR
149+0.48 EUR
195+0.37 EUR
219+0.33 EUR
500+0.27 EUR
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BBY6602VH6327XTSA1 INFINEON TECHNOLOGIES bby66series.pdf?folderId=db3a304313d846880113ddc160d402c0&fileId=db3a304313d846880113deb52d8e0400 Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Case: SC79
Features of semiconductor devices: RF
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: varicap
Load current: 50mA
Max. off-state voltage: 12V
Produkt ist nicht verfügbar
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SN7002NH6433XTMA1 SN7002NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Power dissipation: 0.36W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain current: 0.16A
On-state resistance: 5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 4937 Stücke:
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313+0.23 EUR
439+0.16 EUR
745+0.096 EUR
949+0.075 EUR
1257+0.057 EUR
1370+0.052 EUR
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S25HL512TDPNHI010 INFINEON TECHNOLOGIES 002-12345_rev-AF.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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CYW20706UA2KFFB4GT INFINEON TECHNOLOGIES download Category: IoT (WiFi/Bluetooth) modules
Description: Module: WiFi
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+5.46 EUR
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CYW20707UA2KFFB4GT INFINEON TECHNOLOGIES Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth
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2500+5.43 EUR
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IAUC50N08S5L096ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC50N08S5L096-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3f6cf0205 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Kind of channel: enhancement
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 13.9mΩ
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 80V
Pulsed drain current: 200A
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IAUC50N08S5N102ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC50N08S5N102-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd4039a0208 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Kind of channel: enhancement
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 15.8mΩ
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 80V
Pulsed drain current: 200A
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IAUA250N08S5N018AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA250N08S5N018-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39d6fc0b41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5
Type of transistor: N-MOSFET
Kind of channel: enhancement
Technology: OptiMOS™ 5
Case: PG-HSOF-5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 125nC
On-state resistance: 2.5mΩ
Drain current: 35A
Gate-source voltage: ±20V
Power dissipation: 238W
Drain-source voltage: 80V
Pulsed drain current: 813A
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IPD50N08S413ATMA1 INFINEON TECHNOLOGIES PdfFile_624492.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 30000 Stücke:
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2500+0.65 EUR
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SVITLE6250GV33XUMA1 INFINEON TECHNOLOGIES Category: Unclassified
Description: SVITLE6250GV33XUMA1
auf Bestellung 829 Stücke:
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ISC011N06LM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC011N06LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4627956d53f01795f5741e469ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
On-state resistance: 1.15mΩ
Power dissipation: 188W
Produkt ist nicht verfügbar
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PVI5033RS-TPBF PVI5033RS-TPBF INFINEON TECHNOLOGIES PVI5033RS-TPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
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PVI5033RSPBF PVI5033RSPBF INFINEON TECHNOLOGIES PVI5033RPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 5ms
Manufacturer series: PVI5033RPbF
Produkt ist nicht verfügbar
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BFP740H6327XTSA1 BFP740H6327XTSA1 INFINEON TECHNOLOGIES BFP740.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Polarisation: bipolar
Kind of transistor: HBT; RF
Type of transistor: NPN
Kind of package: reel; tape
Technology: SiGe:C
Mounting: SMD
Case: SOT343
Collector current: 45mA
Power dissipation: 0.16W
Collector-emitter voltage: 13V
Current gain: 160...400
Frequency: 44GHz
auf Bestellung 2465 Stücke:
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179+0.4 EUR
200+0.36 EUR
227+0.32 EUR
500+0.28 EUR
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BFP740ESDH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP740ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638968a5f4ea7 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.31 EUR
Mindestbestellmenge: 3000
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FD1000R33HE3KBPSA1 INFINEON TECHNOLOGIES FD1000R33HE3K.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Mechanical mounting: screw
Case: AG-IHVB190
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 3.3kV
Power dissipation: 11.5kW
Topology: buck-boost chopper
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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BSS225H6327FTSA1 BSS225H6327FTSA1 INFINEON TECHNOLOGIES BSS225H6327FTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Case: SOT89
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Power dissipation: 1W
Gate-source voltage: ±20V
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
204+0.35 EUR
217+0.33 EUR
262+0.27 EUR
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IPB330P10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IPB339N20NM6ATMA1 INFINEON TECHNOLOGIES IPB339N20NM6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 156A
Drain-source voltage: 200V
Drain current: 39A
Gate charge: 15.9nC
On-state resistance: 33.9mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
Produkt ist nicht verfügbar
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BSS84PH7894XTMA1 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
Application: automotive industry
Technology: SIPMOS™
Produkt ist nicht verfügbar
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BSS139H6327XTSA1 BSS139H6327XTSA1 INFINEON TECHNOLOGIES BSS139H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Gate-source voltage: ±20V
auf Bestellung 3674 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
228+0.31 EUR
341+0.21 EUR
394+0.18 EUR
500+0.17 EUR
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IPP052NE7N3GXKSA1 IPP052NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP052NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 75 Stücke:
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43+1.7 EUR
45+1.62 EUR
51+1.42 EUR
59+1.22 EUR
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IRF40R207 IRF40R207 INFINEON TECHNOLOGIES IRF40R207.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
auf Bestellung 516 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
114+0.63 EUR
135+0.53 EUR
147+0.49 EUR
250+0.43 EUR
500+0.4 EUR
Mindestbestellmenge: 91
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IPB016N06L3GATMA1 IPB016N06L3GATMA1 INFINEON TECHNOLOGIES IPB016N06L3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Produkt ist nicht verfügbar
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CY15B016J-SXA INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016J-SXAT INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016J-SXET INFINEON TECHNOLOGIES download Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016Q-SXE INFINEON TECHNOLOGIES Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016Q-SXET INFINEON TECHNOLOGIES Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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IDH20G65C6XKSA1 IDH20G65C6XKSA1 INFINEON TECHNOLOGIES IDH20G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Produkt ist nicht verfügbar
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SPW32N50C3FKSA1 SPW32N50C3FKSA1 INFINEON TECHNOLOGIES SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.85 EUR
10+7.25 EUR
12+6.46 EUR
Mindestbestellmenge: 9
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SLB9670VQ20FW785XTMA1 INFINEON TECHNOLOGIES Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6 Category: Unclassified
Description: SLB9670VQ20FW785XTMA1
auf Bestellung 105000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+2.99 EUR
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S28HS02GTFPBHV050
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Produkt ist nicht verfügbar
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S28HS02GTFPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
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IPA50R140CPXKSA1 IPA50R140CP-DTE.pdf
IPA50R140CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
Mindestbestellmenge: 14
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IPP50R140CPXKSA1 IPP50R140CP-DTE.pdf
IPP50R140CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.26 EUR
16+4.73 EUR
17+4.38 EUR
Mindestbestellmenge: 14
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IKW75N65RH5XKSA1 Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+6.51 EUR
Mindestbestellmenge: 240
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IKW75N65SS5XKSA1 Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+10.15 EUR
Mindestbestellmenge: 240
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IKZA75N65RH5XKSA1 Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+7.11 EUR
Mindestbestellmenge: 240
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IRF9952TRPBF irf9952pbf.pdf
IRF9952TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Case: SO8
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
On-state resistance: 0.1/0.25Ω
Power dissipation: 2W
Drain current: 3.5/-2.3A
Gate-source voltage: ±30V
Drain-source voltage: 30/-30V
Produkt ist nicht verfügbar
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SPW16N50C3FKSA1 SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 16A; 160W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 16A
Power dissipation: 160W
Case: TO247
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 66nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP08N80C3XKSA1 SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
On-state resistance: 0.56Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 60nC
Produkt ist nicht verfügbar
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BCP5316H6327XTSA1 bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: TO261-4
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
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IPD90N04S404ATMA1 IPD90N04S404.pdf
IPD90N04S404ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 71W
Drain current: 81A
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
auf Bestellung 2294 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
61+1.19 EUR
69+1.04 EUR
74+0.97 EUR
Mindestbestellmenge: 51
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IPB90N04S402ATMA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 150W
Drain current: 90A
Application: automotive industry
Gate charge: 118nC
Produkt ist nicht verfügbar
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IPC90N04S5-3R6
IPC90N04S5-3R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 63W
Drain current: 90A
Technology: OptiMOS™ 5
Gate charge: 32.6nC
Produkt ist nicht verfügbar
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IPC90N04S5L-3R3
IPC90N04S5L-3R3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 62W
Drain current: 90A
Technology: OptiMOS™ 5
Gate charge: 40nC
Produkt ist nicht verfügbar
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IPD90N04S304ATMA1 IPD90N04S304.pdf
IPD90N04S304ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 136W
Drain current: 90A
Technology: OptiMOS™ T
Gate charge: 60nC
Produkt ist nicht verfügbar
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IPD90N04S4L04ATMA1 Infineon-IPD90N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291cab92685eaa&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 71W
Drain current: 90A
Application: automotive industry
Gate charge: 60nC
Produkt ist nicht verfügbar
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SPP15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD06N60C3ATMA1 SPD06N60C3_rev+2+1.pdf?fileId=db3a30433f1b26e8013f1de2f997013c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; 74W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 74W
Case: DPAK; TO252
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3910TRLPBF irfr3910pbf.pdf
IRFR3910TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC007N04NM6ATMA1 infineon-isc007n04nm6-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.57 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
ISP16DP10LMXTSA1 Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE49644MXTSA1 Infineon-TLE4964_4M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e34e1192005
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 2781000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.35 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TLI49631MXTSA1 Infineon-TLI4963-1M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edce0c27c7
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ESD24VS2UE6327HTSA1 ESD24VS2UE6327.pdf
ESD24VS2UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 230W; 32V; unidirectional; SOT23; reel,tape; ESD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 32V
Peak pulse power dissipation: 230W
Semiconductor structure: unidirectional
Version: ESD
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
205+0.35 EUR
221+0.33 EUR
Mindestbestellmenge: 162
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IRFP7537PBF irfp7537pbf.pdf
IRFP7537PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 172A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
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BSS606NH6327XTSA1 BSS606NH6327XTSA1.pdf
BSS606NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-SOT89
Mounting: SMD
Polarisation: unipolar
On-state resistance: 90mΩ
Power dissipation: 1W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 3.2A
Kind of channel: enhancement
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.89 EUR
Mindestbestellmenge: 80
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BSL606SNH6327XTSA1 BSL606SNH6327XTSA1.pdf
BSL606SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TSOP-6
Mounting: SMD
Polarisation: unipolar
On-state resistance: 95mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 4.5A
Kind of channel: enhancement
auf Bestellung 4585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
149+0.48 EUR
195+0.37 EUR
219+0.33 EUR
500+0.27 EUR
Mindestbestellmenge: 109
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BBY6602VH6327XTSA1 bby66series.pdf?folderId=db3a304313d846880113ddc160d402c0&fileId=db3a304313d846880113deb52d8e0400
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Case: SC79
Features of semiconductor devices: RF
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Type of diode: varicap
Load current: 50mA
Max. off-state voltage: 12V
Produkt ist nicht verfügbar
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SN7002NH6433XTMA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Power dissipation: 0.36W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain current: 0.16A
On-state resistance: 5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 4937 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
439+0.16 EUR
745+0.096 EUR
949+0.075 EUR
1257+0.057 EUR
1370+0.052 EUR
Mindestbestellmenge: 313
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S25HL512TDPNHI010 002-12345_rev-AF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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CYW20706UA2KFFB4GT download
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: WiFi
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+5.46 EUR
Mindestbestellmenge: 2500
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CYW20707UA2KFFB4GT Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+5.43 EUR
Mindestbestellmenge: 2500
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IAUC50N08S5L096ATMA1 Infineon-IAUC50N08S5L096-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3f6cf0205
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Kind of channel: enhancement
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 13.9mΩ
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 80V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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IAUC50N08S5N102ATMA1 Infineon-IAUC50N08S5N102-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd4039a0208
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 200A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Kind of channel: enhancement
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 15.8mΩ
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 80V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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IAUA250N08S5N018AUMA1 Infineon-IAUA250N08S5N018-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39d6fc0b41
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 35A; Idm: 813A; 238W; PG-HSOF-5
Type of transistor: N-MOSFET
Kind of channel: enhancement
Technology: OptiMOS™ 5
Case: PG-HSOF-5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 125nC
On-state resistance: 2.5mΩ
Drain current: 35A
Gate-source voltage: ±20V
Power dissipation: 238W
Drain-source voltage: 80V
Pulsed drain current: 813A
Produkt ist nicht verfügbar
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IPD50N08S413ATMA1 PdfFile_624492.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.65 EUR
Mindestbestellmenge: 2500
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SVITLE6250GV33XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: SVITLE6250GV33XUMA1
auf Bestellung 829 Stücke:
Lieferzeit 14-21 Tag (e)
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ISC011N06LM5ATMA1 Infineon-ISC011N06LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4627956d53f01795f5741e469ea
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
On-state resistance: 1.15mΩ
Power dissipation: 188W
Produkt ist nicht verfügbar
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PVI5033RS-TPBF PVI5033RS-TPBF.pdf
PVI5033RS-TPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
Produkt ist nicht verfügbar
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PVI5033RSPBF PVI5033RPBF.pdf
PVI5033RSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 5ms
Manufacturer series: PVI5033RPbF
Produkt ist nicht verfügbar
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BFP740H6327XTSA1 BFP740.pdf
BFP740H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Polarisation: bipolar
Kind of transistor: HBT; RF
Type of transistor: NPN
Kind of package: reel; tape
Technology: SiGe:C
Mounting: SMD
Case: SOT343
Collector current: 45mA
Power dissipation: 0.16W
Collector-emitter voltage: 13V
Current gain: 160...400
Frequency: 44GHz
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
200+0.36 EUR
227+0.32 EUR
500+0.28 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BFP740ESDH6327XTSA1 Infineon-BFP740ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638968a5f4ea7
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.31 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FD1000R33HE3KBPSA1 FD1000R33HE3K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Mechanical mounting: screw
Case: AG-IHVB190
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 3.3kV
Power dissipation: 11.5kW
Topology: buck-boost chopper
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
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BSS225H6327FTSA1 BSS225H6327FTSA1.pdf
BSS225H6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Case: SOT89
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Power dissipation: 1W
Gate-source voltage: ±20V
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
204+0.35 EUR
217+0.33 EUR
262+0.27 EUR
Mindestbestellmenge: 179
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IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IPB339N20NM6ATMA1 IPB339N20NM6ATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 156A
Drain-source voltage: 200V
Drain current: 39A
Gate charge: 15.9nC
On-state resistance: 33.9mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
Produkt ist nicht verfügbar
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BSS84PH7894XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
Application: automotive industry
Technology: SIPMOS™
Produkt ist nicht verfügbar
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BSS139H6327XTSA1 BSS139H6327XTSA1.pdf
BSS139H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Gate-source voltage: ±20V
auf Bestellung 3674 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
228+0.31 EUR
341+0.21 EUR
394+0.18 EUR
500+0.17 EUR
Mindestbestellmenge: 148
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IPP052NE7N3GXKSA1 IPP052NE7N3G-DTE.pdf
IPP052NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
45+1.62 EUR
51+1.42 EUR
59+1.22 EUR
Mindestbestellmenge: 43
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IRF40R207 IRF40R207.pdf
IRF40R207
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
auf Bestellung 516 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
114+0.63 EUR
135+0.53 EUR
147+0.49 EUR
250+0.43 EUR
500+0.4 EUR
Mindestbestellmenge: 91
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IPB016N06L3GATMA1 IPB016N06L3G-DTE.pdf
IPB016N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Produkt ist nicht verfügbar
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CY15B016J-SXA download
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016J-SXAT download
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016J-SXET download
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016Q-SXE Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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CY15B016Q-SXET Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 3÷3.6VDC; 16MHz; SOIC8
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Memory: 16kb FRAM
Clock frequency: 16MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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IDH20G65C6XKSA1 IDH20G65C6.pdf
IDH20G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Produkt ist nicht verfügbar
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SPW32N50C3FKSA1 SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e
SPW32N50C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.85 EUR
10+7.25 EUR
12+6.46 EUR
Mindestbestellmenge: 9
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SLB9670VQ20FW785XTMA1 Infineon-SLB%209670VQ2.0-DataSheet-v01_04-EN.pdf?fileId=5546d4626fc1ce0b016fc78270350cd6
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: SLB9670VQ20FW785XTMA1
auf Bestellung 105000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+2.99 EUR
Mindestbestellmenge: 5000
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