Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149618) > Seite 2468 nach 2494
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1EDS5663HXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16 Technology: EiceDRIVER™; GaN Case: PG-DSO-16 Mounting: SMD Kind of package: reel; tape Voltage class: 650V Supply voltage: 3...3.5V; 6.5...20V Output current: -8...4A Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver; high-side Topology: single transistor |
Produkt ist nicht verfügbar |
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IGOT60R070D1AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 125W Case: PG-DSO-20 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate charge: 5.8nC Kind of transistor: HEMT Gate current: 20mA Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
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IGT60R070D1ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 125W Case: PG-HSOF-8-3 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate charge: 5.8nC Kind of transistor: HEMT Gate current: 20mA Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
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IRFH7110TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRFTS9342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: -30V Drain current: -5.8A |
auf Bestellung 2637 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFTS8342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: 30V Drain current: 8.2A |
auf Bestellung 3442 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB015N08N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 180A Power dissipation: 375W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
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IPB015N04LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 260nC |
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IPB017N06N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
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2EDS8165HXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Case: PG-DSO-16 Supply voltage: 3...3.5V; 4.5...20V Output current: -2...1A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: galvanically isolated Kind of package: reel; tape Technology: EiceDRIVER™ Kind of integrated circuit: high-side; MOSFET gate driver Topology: MOSFET half-bridge Voltage class: 650V Mounting: SMD |
Produkt ist nicht verfügbar |
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IPI80N06S407AKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 58A Pulsed drain current: 320A Power dissipation: 79W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: THT Gate charge: 27nC Kind of channel: enhancement Technology: OptiMOS® -T2 |
auf Bestellung 398 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB180N06S4H1ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Pulsed drain current: 720A Power dissipation: 250W Case: PG-TO263-7-3 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRLTS2242TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: -20V Drain current: -6.9A |
auf Bestellung 3136 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
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FF300R12KT4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.6kW |
Produkt ist nicht verfügbar |
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IRF6644TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.3A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 89W Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IR2010PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -3...3A Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 95ns Turn-off time: 65ns Integrated circuit features: charge pump; dead time; integrated bootstrap functionality |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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XMC4108F64K64ABXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Operating temperature: -40...125°C Number of inputs/outputs: 21 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Case: PG-LQFP-64 Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB |
Produkt ist nicht verfügbar |
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XMC4500F100K768ACXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Operating temperature: -40...125°C Number of inputs/outputs: 55 Number of 16bit timers: 26 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4500 Memory: 160kB SRAM; 768kB FLASH Case: PG-LQFP-100 Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB |
Produkt ist nicht verfügbar |
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XMC4502F100K768ACXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Operating temperature: -40...125°C Number of inputs/outputs: 55 Number of 16bit timers: 26 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4500 Memory: 160kB SRAM; 768kB FLASH Case: PG-LQFP-100 Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB |
Produkt ist nicht verfügbar |
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XMC4700F144F1536AAXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH Operating temperature: -40...85°C Number of inputs/outputs: 119 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4700 Memory: 276kB SRAM; 1.5MB FLASH Case: PG-LQFP-144 Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRS21844STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
Produkt ist nicht verfügbar |
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BCX55H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 100MHz |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R380P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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XC822MT1FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-16 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 1 Memory: 500B SRAM; 4kB FLASH Operating temperature: -40...85°C Integrated circuit features: LEDTSCU; MDU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
auf Bestellung 372 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH5110TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
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TLE42764GVATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD Operating temperature: -40...150°C Output voltage: 2.5...20V Output current: 0.4A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 4.5...41V Kind of package: reel; tape Kind of voltage regulator: adjustable; LDO; linear Mounting: SMD Case: PG-TO263-5 Tolerance: ±2% |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE4268GXUMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.15A Case: PG-DSO-20 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 5.5...45V |
auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE42764GV50ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD Operating temperature: -40...150°C Output voltage: 5V Output current: 0.4A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 4.5...41V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: PG-TO263-5 Tolerance: ±2% |
Produkt ist nicht verfügbar |
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TLE42764DVATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD Operating temperature: -40...150°C Output voltage: 2.5...20V Output current: 0.4A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 4.5...40V Kind of package: reel; tape Kind of voltage regulator: adjustable; LDO; linear Mounting: SMD Case: PG-TO252-5 Tolerance: ±2% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLE42764DV50ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD Operating temperature: -40...150°C Output voltage: 5V Output current: 0.4A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 4.5...41V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: PG-TO252-5 Tolerance: ±2% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPA60R360P7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 22W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Pulsed drain current: 26A |
Produkt ist nicht verfügbar |
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IPG20N10S4L35ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A Drain-source voltage: 100V Drain current: 17A On-state resistance: 35mΩ Type of transistor: N-MOSFET x2 Power dissipation: 43W Polarisation: unipolar Technology: OptiMOS™ T2 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 80A Mounting: SMD Case: PG-TDSON-8-4 |
Produkt ist nicht verfügbar |
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IPP60R099P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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AUIR3241STR | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Mounting: SMD Number of channels: 1 Kind of package: reel; tape Voltage class: 40V Supply voltage: 3...36V DC Power: 625mW Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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IRLHS6276TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Case: PQFN2X2 Drain-source voltage: 20V Drain current: 12A Type of transistor: N-MOSFET x2 Power dissipation: 4.5W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |
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ITS4142N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Supply voltage: 12...45V DC Case: SOT223 On-state resistance: 0.2Ω Turn-on time: 150µs Turn-off time: 0.1ms Output current: 0.7A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Power dissipation: 1.4W Kind of package: reel; tape Technology: Industrial PROFET Kind of integrated circuit: high-side Mounting: SMD Operating temperature: -30...85°C |
auf Bestellung 3314 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBTA92E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 50MHz |
auf Bestellung 1303 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7451PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8 Drain-source voltage: 150V Drain current: 3.6A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhancement Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
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IRF7451TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8 Drain-source voltage: 150V Drain current: 3.6A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
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IRF250P224 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W Type of transistor: N-MOSFET Power dissipation: 313W Polarisation: unipolar Case: TO247AC Kind of package: tube Mounting: THT Gate charge: 203nC Technology: StrongIRFET™ Kind of channel: enhancement Drain-source voltage: 250V Gate-source voltage: ±20V Drain current: 68A On-state resistance: 12mΩ |
Produkt ist nicht verfügbar |
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BCR401WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; current regulator,LED driver Mounting: SMD Number of channels: 1 Integrated circuit features: linear dimming Operating voltage: 1.2...18V DC Kind of integrated circuit: current regulator; LED driver Topology: single transistor Output current: 10...60mA Case: SOT343 Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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IPP60R190P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3 Gate-source voltage: ±20V Case: PG-TO220-3 Mounting: THT Drain-source voltage: 600V Drain current: 20.2A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 151W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ P6 Kind of channel: enhancement |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R199CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 139W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R120P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPP023N10N5AKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCX42E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 125V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz |
auf Bestellung 1713 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR505E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23 Mounting: SMD Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Power dissipation: 0.33W Frequency: 100MHz |
auf Bestellung 3048 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR503E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23 Mounting: SMD Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Power dissipation: 0.33W Frequency: 100MHz |
auf Bestellung 7608 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE1HS01G1XUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8 Type of integrated circuit: PMIC Operating voltage: 10.2...18V DC Case: PG-DSO-8 Mounting: SMD Operating temperature: -25...125°C Application: for LCD displays; SMPS Frequency: 50...609kHz Kind of integrated circuit: resonant mode controller Topology: push-pull |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS5012SDA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 12mΩ Supply voltage: 5.5...20V DC Technology: High Current PROFET |
auf Bestellung 1017 Stücke: Lieferzeit 14-21 Tag (e) |
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FD300R12KE3HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: boost chopper Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Application: Inverter Power dissipation: 1.47kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPA60R180P7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 53A |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 221 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB013NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W Case: CanPAK™ MX; MG-WDSON-2 Drain-source voltage: 25V Drain current: 103A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
S25FL064LABMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Operating temperature: -40...105°C Case: SOIC8 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Application: automotive Kind of package: reel; tape Operating frequency: 108MHz Kind of interface: serial Memory: 64Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FL128LAGMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8 Operating temperature: -40...105°C Case: SOIC8 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Application: automotive Kind of package: reel; tape Operating frequency: 133MHz Kind of interface: serial Memory: 128Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FL128SAGMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Case: SOIC16 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Application: automotive Kind of package: reel; tape Operating frequency: 133MHz Kind of interface: serial Memory: 128Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FL256SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Case: SOIC16 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Application: automotive Kind of package: reel; tape Operating frequency: 133MHz Kind of interface: serial Memory: 256Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FL512SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Case: SOIC16 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Application: automotive Kind of package: reel; tape Operating frequency: 133MHz Kind of interface: serial Memory: 512Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
1EDS5663HXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGOT60R070D1AUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGT60R070D1ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH7110TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFTS9342TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -5.8A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -5.8A
auf Bestellung 2637 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
143+ | 0.50 EUR |
184+ | 0.39 EUR |
230+ | 0.31 EUR |
424+ | 0.17 EUR |
447+ | 0.16 EUR |
1000+ | 0.15 EUR |
IRFTS8342TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.2A
auf Bestellung 3442 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
180+ | 0.40 EUR |
360+ | 0.20 EUR |
382+ | 0.19 EUR |
3000+ | 0.18 EUR |
IPB015N08N5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB015N04LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 260nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 260nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB017N06N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2EDS8165HXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPI80N06S407AKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Technology: OptiMOS® -T2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Technology: OptiMOS® -T2
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.65 EUR |
30+ | 2.39 EUR |
36+ | 2.03 EUR |
38+ | 1.92 EUR |
50+ | 1.90 EUR |
250+ | 1.84 EUR |
IPB180N06S4H1ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLTS2242TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -20V
Drain current: -6.9A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -20V
Drain current: -6.9A
auf Bestellung 3136 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
175+ | 0.41 EUR |
252+ | 0.28 EUR |
300+ | 0.24 EUR |
486+ | 0.15 EUR |
511+ | 0.14 EUR |
3000+ | 0.13 EUR |
BCP55H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF300R12KT4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF6644TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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IR2010PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
XMC4108F64K64ABXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
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XMC4500F100K768ACXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
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XMC4502F100K768ACXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
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XMC4700F144F1536AAXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
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IRS21844STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
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BCX55H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
IPA60R380P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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XC822MT1FRIAAFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.47 EUR |
52+ | 1.40 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
IRFH5110TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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TLE42764GVATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Operating temperature: -40...150°C
Output voltage: 2.5...20V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Operating temperature: -40...150°C
Output voltage: 2.5...20V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 2.97 EUR |
TLE4268GXUMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.80 EUR |
44+ | 1.63 EUR |
61+ | 1.19 EUR |
65+ | 1.12 EUR |
TLE42764GV50ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
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TLE42764DVATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Operating temperature: -40...150°C
Output voltage: 2.5...20V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...40V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-TO252-5
Tolerance: ±2%
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Operating temperature: -40...150°C
Output voltage: 2.5...20V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...40V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-TO252-5
Tolerance: ±2%
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TLE42764DV50ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-TO252-5
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-TO252-5
Tolerance: ±2%
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IPA60R360P7SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
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IPG20N10S4L35ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Drain-source voltage: 100V
Drain current: 17A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 43W
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TDSON-8-4
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Drain-source voltage: 100V
Drain current: 17A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 43W
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TDSON-8-4
Produkt ist nicht verfügbar
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IPP60R099P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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AUIR3241STR |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Supply voltage: 3...36V DC
Power: 625mW
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Supply voltage: 3...36V DC
Power: 625mW
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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IRLHS6276TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
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ITS4142N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 12...45V DC
Case: SOT223
On-state resistance: 0.2Ω
Turn-on time: 150µs
Turn-off time: 0.1ms
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.4W
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -30...85°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 12...45V DC
Case: SOT223
On-state resistance: 0.2Ω
Turn-on time: 150µs
Turn-off time: 0.1ms
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.4W
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -30...85°C
auf Bestellung 3314 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.68 EUR |
30+ | 2.40 EUR |
48+ | 1.50 EUR |
51+ | 1.42 EUR |
1000+ | 1.40 EUR |
2000+ | 1.36 EUR |
SMBTA92E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
219+ | 0.33 EUR |
365+ | 0.20 EUR |
863+ | 0.08 EUR |
910+ | 0.08 EUR |
IRF7451PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7451TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF250P224 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Case: TO247AC
Kind of package: tube
Mounting: THT
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Drain-source voltage: 250V
Gate-source voltage: ±20V
Drain current: 68A
On-state resistance: 12mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Case: TO247AC
Kind of package: tube
Mounting: THT
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Drain-source voltage: 250V
Gate-source voltage: ±20V
Drain current: 68A
On-state resistance: 12mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR401WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming
Operating voltage: 1.2...18V DC
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Output current: 10...60mA
Case: SOT343
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming
Operating voltage: 1.2...18V DC
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Output current: 10...60mA
Case: SOT343
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R190P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Gate-source voltage: ±20V
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P6
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Gate-source voltage: ±20V
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P6
Kind of channel: enhancement
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.16 EUR |
33+ | 2.20 EUR |
35+ | 2.09 EUR |
IPP60R199CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.75 EUR |
23+ | 3.19 EUR |
24+ | 3.00 EUR |
IPA60R120P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP023N10N5AKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCX42E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
auf Bestellung 1713 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.30 EUR |
302+ | 0.24 EUR |
391+ | 0.18 EUR |
439+ | 0.16 EUR |
633+ | 0.11 EUR |
BCR505E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.33W
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.33W
Frequency: 100MHz
auf Bestellung 3048 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
439+ | 0.16 EUR |
671+ | 0.11 EUR |
971+ | 0.07 EUR |
1027+ | 0.07 EUR |
3000+ | 0.07 EUR |
BCR503E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Power dissipation: 0.33W
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Power dissipation: 0.33W
Frequency: 100MHz
auf Bestellung 7608 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
150+ | 0.48 EUR |
233+ | 0.31 EUR |
321+ | 0.22 EUR |
391+ | 0.18 EUR |
459+ | 0.16 EUR |
878+ | 0.08 EUR |
944+ | 0.08 EUR |
ICE1HS01G1XUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Operating voltage: 10.2...18V DC
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: for LCD displays; SMPS
Frequency: 50...609kHz
Kind of integrated circuit: resonant mode controller
Topology: push-pull
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Operating voltage: 10.2...18V DC
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: for LCD displays; SMPS
Frequency: 50...609kHz
Kind of integrated circuit: resonant mode controller
Topology: push-pull
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS5012SDA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.33 EUR |
29+ | 2.49 EUR |
31+ | 2.37 EUR |
32+ | 2.29 EUR |
100+ | 2.27 EUR |
FD300R12KE3HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Application: Inverter
Power dissipation: 1.47kW
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Application: Inverter
Power dissipation: 1.47kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA60R180P7SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.04 EUR |
40+ | 1.80 EUR |
47+ | 1.54 EUR |
49+ | 1.47 EUR |
100+ | 1.43 EUR |
IPW60R190C6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.06 EUR |
20+ | 3.59 EUR |
24+ | 3.10 EUR |
25+ | 2.93 EUR |
120+ | 2.89 EUR |
BSB013NE2LXIXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL064LABMFB013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 108MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 108MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128LAGMFB013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL128SAGMFB013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FL256SAGMFB013 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL512SAGMFB013 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH