Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148599) > Seite 2468 nach 2477
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IPA60R380C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPA60R600E6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.3A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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CY15B104QN-20LPXI | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 20MHz; GQFN8 Interface: SPI Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Mounting: SMD Operating temperature: -40...85°C Case: GQFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 20MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY15B104QN-20LPXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 20MHz; GQFN8 Interface: SPI Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Mounting: SMD Operating temperature: -40...85°C Case: GQFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 20MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY15B104QN-50LPXI | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; GQFN8 Interface: SPI Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Mounting: SMD Operating temperature: -40...85°C Case: GQFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY15B104QN-50SXA | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8 Interface: SPI Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Mounting: SMD Operating temperature: -40...85°C Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY15B104QN-50SXAT | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8 Interface: SPI Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Mounting: SMD Operating temperature: -40...85°C Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 50MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY15B104QN-50SXI | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8 Interface: SPI Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Mounting: SMD Operating temperature: -40...85°C Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY15B104QN-50SXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8 Interface: SPI Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Mounting: SMD Operating temperature: -40...85°C Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 50MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY15B104QSN-108SXI | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; SOIC8 Interface: SPI Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Mounting: SMD Operating temperature: -40...85°C Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 108MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY15B104QSN-108LPXI | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; GQFN8 Interface: SPI Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Mounting: SMD Operating temperature: -40...85°C Case: GQFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 108MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY15B104QSN-108SXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; SOIC8 Interface: SPI Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Mounting: SMD Operating temperature: -40...85°C Case: SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 108MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IPB123N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 58A Power dissipation: 94W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 12.3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS192PH6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89 Case: PG-SOT89 Drain-source voltage: -250V Drain current: -0.19A On-state resistance: 12Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB60R060P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 164W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPZA60R060P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 164W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 60mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPA600N25NM3SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 10A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS4410TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel Drain-source voltage: 100V Drain current: 96A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC030P03NS3GAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±25V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EVAL-IMM101T-015TOBO1 (SP004177748) | INFINEON TECHNOLOGIES |
![]() Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors Components: IMM101T-015M Interface: GPIO; I2C; PWM; UART Kind of connector: screw terminal x2 Application: motors Type of development kit: evaluation Kind of module: motor driver Kit contents: prototype board |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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CY14ME064J2-SXQT | INFINEON TECHNOLOGIES |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 64kb SRAM Memory organisation: 8kx8bit Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Frequency: 3.4MHz Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B104M-ZSP25XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B104M-ZSP25XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 25ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B104M-ZSP45XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY14B104M-ZSP45XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGBHB200 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGBHB203 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGBHI200 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGBHI203 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGBHV200 | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGBHV203 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGMFB103 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGMFI100 | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGMFI101 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8; tube Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGMFI103 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGNFI100 | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGNFI101 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8; tube Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SAGNFI103 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SDSBHB203 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SDSBHI200 | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SDSBHM200 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SDSBHV200 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SDSMFI1D1 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8; tube Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SDSNFI100 | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S25FS128SDSNFI101 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8; tube Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IPB009N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 0.95mΩ Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Power dissipation: 250W Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC010N04LS6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: PG-TDSON-8 FL On-state resistance: 1mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC010N04LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC010N04LSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB180N04S4H0ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 173nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IAUC80N04S6L032ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 66A Pulsed drain current: 320A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IAUA180N04S5N012AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Pulsed drain current: 720A Power dissipation: 125W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IPZ60R017C7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4 Mounting: THT Drain-source voltage: 600V Drain current: 69A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 240nC Technology: CoolMOS™ C7 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO247-4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPW60R099P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R160C6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB60R160C6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPW60R160P6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR555E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23 Mounting: SMD Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Power dissipation: 0.33W Frequency: 150MHz |
auf Bestellung 809 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSS131H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 13247 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R380C6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA60R600E6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B104QN-20LPXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 20MHz; GQFN8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 20MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 20MHz; GQFN8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 20MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B104QN-20LPXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 20MHz; GQFN8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 20MHz; GQFN8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B104QN-50LPXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; GQFN8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 50MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; GQFN8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B104QN-50SXA |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 50MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B104QN-50SXAT |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 50MHz
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 50MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B104QN-50SXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 50MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B104QN-50SXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 50MHz
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 50MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 50MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B104QSN-108SXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 108MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 108MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B104QSN-108LPXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; GQFN8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 108MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; GQFN8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: GQFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 108MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B104QSN-108SXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 108MHz
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 108MHz; SOIC8
Interface: SPI
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 108MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB123N10N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS192PH6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Drain-source voltage: -250V
Drain current: -0.19A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Drain-source voltage: -250V
Drain current: -0.19A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 640 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
154+ | 0.47 EUR |
180+ | 0.40 EUR |
298+ | 0.24 EUR |
315+ | 0.23 EUR |
IPB60R060P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPZA60R060P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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IPA600N25NM3SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
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IRFS4410TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel
Drain-source voltage: 100V
Drain current: 96A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel
Drain-source voltage: 100V
Drain current: 96A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSC030P03NS3GAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
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EVAL-IMM101T-015TOBO1 (SP004177748) |
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Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Components: IMM101T-015M
Interface: GPIO; I2C; PWM; UART
Kind of connector: screw terminal x2
Application: motors
Type of development kit: evaluation
Kind of module: motor driver
Kit contents: prototype board
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Components: IMM101T-015M
Interface: GPIO; I2C; PWM; UART
Kind of connector: screw terminal x2
Application: motors
Type of development kit: evaluation
Kind of module: motor driver
Kit contents: prototype board
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 109.34 EUR |
CY14ME064J2-SXQT |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Frequency: 3.4MHz
Supply voltage: 4.5...5.5V DC
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Frequency: 3.4MHz
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY14B104M-ZSP25XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY14B104M-ZSP25XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B104M-ZSP45XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B104M-ZSP45XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGBHB200 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGBHB203 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGBHI200 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGBHI203 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGBHV200 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGBHV203 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGMFB103 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGMFI100 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGMFI101 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGMFI103 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGNFI100 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGNFI101 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SAGNFI103 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SDSBHB203 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SDSBHI200 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
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S25FS128SDSBHM200 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SDSBHV200 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SDSMFI1D1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC8; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SDSNFI100 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25FS128SDSNFI101 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; WSON8; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB009N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Power dissipation: 250W
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Power dissipation: 250W
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC010N04LS6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC010N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC010N04LSIATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB180N04S4H0ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUC80N04S6L032ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUA180N04S5N012AUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPZ60R017C7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4
Mounting: THT
Drain-source voltage: 600V
Drain current: 69A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 240nC
Technology: CoolMOS™ C7
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4
Mounting: THT
Drain-source voltage: 600V
Drain current: 69A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 240nC
Technology: CoolMOS™ C7
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO247-4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R099P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.52 EUR |
14+ | 5.35 EUR |
15+ | 5.05 EUR |
IPW60R160C6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB60R160C6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R160P6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR555E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.33W
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.33W
Frequency: 150MHz
auf Bestellung 809 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
496+ | 0.14 EUR |
646+ | 0.11 EUR |
809+ | 0.09 EUR |
BSS131H6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS131H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 13247 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
319+ | 0.22 EUR |
408+ | 0.18 EUR |
498+ | 0.14 EUR |
604+ | 0.12 EUR |
944+ | 0.08 EUR |
1000+ | 0.07 EUR |