Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148842) > Seite 2468 nach 2481
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IR2132JPBF | INFINEON TECHNOLOGIES |
  Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 475ns Turn-on time: 675ns Power: 2W |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2181SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs Protection: undervoltage UVP |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW20N60S5 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLZ34NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Power dissipation: 56W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: THT Gate charge: 16.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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| IRLZ34NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 21A Pulsed drain current: 110A Power dissipation: 68W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRFP3703PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 210A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 209nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 50mA Power dissipation: 1.8W Case: SOT223 On-state resistance: 6.5Ω Mounting: SMD Kind of channel: depletion Technology: SIPMOS™ Gate-source voltage: ±20V |
auf Bestellung 1302 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2304SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 185ns Turn-on time: 220ns Power: 625mW |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Case: SC79 Max. off-state voltage: 150V |
auf Bestellung 2180 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Semiconductor structure: common cathode; double Features of semiconductor devices: PIN; RF Kind of package: reel; tape Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Case: SOT323 Max. off-state voltage: 150V |
auf Bestellung 1415 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NLPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 53A Power dissipation: 120W Case: TO262 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of channel: enhancement |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 46A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE2HS01GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20 Type of integrated circuit: PMIC Kind of integrated circuit: resonant mode controller Output current: 6mA Frequency: 30kHz...1MHz Case: PG-DSO-20 Mounting: SMD Operating temperature: -25...125°C Topology: push-pull Application: SMPS Operating voltage: 11...18V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR2112PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 145ns Turn-on time: 205ns Power: 1.6W |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2112SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 145ns Turn-on time: 205ns Power: 1.25W |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2112STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 145ns Turn-on time: 205ns Power: 1.25W |
auf Bestellung 732 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2121PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V Case: DIP8 Type of integrated circuit: driver Mounting: THT Kind of integrated circuit: gate driver; high-/low-side Kind of package: tube Operating temperature: -40...125°C Output current: -2...1A Turn-off time: 105ns Turn-on time: 150ns Power: 1W Number of channels: 1 Voltage class: 5V Supply voltage: 12...18V DC |
auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS4140N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 1Ω Supply voltage: 4.9...60V DC Technology: Classic PROFET |
auf Bestellung 1557 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3006PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
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IM69D120V01XTSA1 | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC Interface: PDM Kind of integrated circuit: digital microphone Type of integrated circuit: driver/sensor Case: LLGA-5-1 Integrated circuit features: MEMS Mounting: SMD Supply voltage: 1.62...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IM69D130V01XTSA1 | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC Interface: PDM Kind of integrated circuit: digital microphone Type of integrated circuit: driver/sensor Case: LLGA-5-1 Integrated circuit features: MEMS Mounting: SMD Supply voltage: 1.62...3.6V DC |
Produkt ist nicht verfügbar |
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IRFB4410PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 96A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4410ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 97A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 514 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA15N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Pulsed drain current: 45A Power dissipation: 34W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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AIHD15N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Turn-on time: 26ns Turn-off time: 319ns Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 45A |
Produkt ist nicht verfügbar |
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AIHD15N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Turn-on time: 28ns Turn-off time: 177ns Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 45A |
Produkt ist nicht verfügbar |
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BTS4142N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 0.15Ω Supply voltage: 12...45V DC Technology: Classic PROFET |
auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW30N135R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 165W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 235nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Turn-off time: 680ns Technology: TRENCHSTOP™ |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPB027N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRLR3636TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 99A Power dissipation: 143W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 1080 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS6163D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-5-11 On-state resistance: 20mΩ Supply voltage: 5.5...62V DC Technology: Classic PROFET |
auf Bestellung 1528 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS716GXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20 Supply voltage: 5.5...40V DC Mounting: SMD Kind of integrated circuit: high-side Kind of output: N-Channel Type of integrated circuit: power switch Case: SO20 Turn-off time: 0.25ms Turn-on time: 270µs On-state resistance: 35mΩ Output current: 2.6...5.3A Power dissipation: 3.6W Number of channels: 4 Technology: Classic PROFET |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW75N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 428W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 401ns Gate-emitter voltage: ±20V Gate charge: 470nC Pulsed collector current: 225A Turn-on time: 69ns Technology: TRENCHSTOP™ |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3910TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 1592 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Gate charge: 0.6nC Drain current: 0.15A Power dissipation: 0.5W Pulsed drain current: 0.77A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 9813 Stücke: Lieferzeit 14-21 Tag (e) |
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PVDZ172NPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 1.5A Mounting: THT Case: DIP8 Operating temperature: -40...85°C Type of relay: solid state Switched voltage: 0...60V DC Release time: 0.5ms Operate time: 2ms Control current: 5...25mA On-state resistance: 0.25Ω Max. operating current: 1.5A Control voltage: 1.2V DC Contacts configuration: SPST-NO Manufacturer series: PVDZ172NPbF Relay variant: MOSFET |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS21867STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 188ns Turn-on time: 192ns Power: 625mW |
auf Bestellung 1589 Stücke: Lieferzeit 14-21 Tag (e) |
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2EDL05N06PFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: PG-DSO-8 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Kind of package: reel; tape Voltage class: 600V Integrated circuit features: integrated bootstrap functionality Technology: EiceDRIVER™ |
auf Bestellung 1249 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS462T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 Supply voltage: 5...34V DC Technology: Classic PROFET Output voltage: 43V |
auf Bestellung 1462 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT1504WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.11A; 100mW Semiconductor structure: double series Case: SOT323 Type of diode: Schottky switching Mounting: SMD Power dissipation: 0.1W Load current: 0.11A Max. off-state voltage: 4V |
auf Bestellung 773 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS711L1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.9...4.4A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: DSO20 On-state resistance: 50mΩ Supply voltage: 5...34V DC Technology: Classic PROFET |
auf Bestellung 1149 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.15A Pulsed drain current: 0.77A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.63nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BSS123NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Gate charge: 0.6nC Drain current: 0.15A Power dissipation: 0.5W Pulsed drain current: 0.77A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 20876 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSZ110N06NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8 Case: PG-TSDSON-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 11mΩ Power dissipation: 50W Drain current: 20A Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BSZ110N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8 Case: PG-TSDSON-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar On-state resistance: 11mΩ Power dissipation: 50W Drain current: 40A Gate-source voltage: ±20V Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR2130SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 475ns Turn-on time: 675ns Power: 1.6W |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4332PbF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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AIHD10N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 64nC Turn-on time: 27ns Turn-off time: 186ns Collector current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRS21094PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -600...290mA Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 850ns Turn-off time: 235ns |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2108SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3307ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR120NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.1A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 432 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR6215TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -13A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 1103 Stücke: Lieferzeit 14-21 Tag (e) |
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BC856SH6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 250MHz |
auf Bestellung 1202 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP170PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Case: PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.9A On-state resistance: 0.3Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of channel: enhancement |
auf Bestellung 717 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL7833STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK Kind of package: reel Case: D2PAK Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Power dissipation: 140W Drain current: 150A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPD90N04S405ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A Technology: OptiMOS™ T2 Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 61A Power dissipation: 65W Pulsed drain current: 344A Case: PG-TO252-3-313 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 18nC On-state resistance: 5.2mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPD068P03L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3 Technology: OptiMOS™ P3 Gate-source voltage: ±20V Power dissipation: 100W Case: PG-TO252-3 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Polarisation: unipolar Drain current: -70A Drain-source voltage: -30V On-state resistance: 11mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SPA07N60C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 32W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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| IR2132JPBF | |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 2W
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 2W
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.55 EUR |
| IR2181SPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.09 EUR |
| SPW20N60S5 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.42 EUR |
| 15+ | 4.88 EUR |
| 30+ | 4.3 EUR |
| 120+ | 3.88 EUR |
| IRLZ34NPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLZ34NSTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP3703PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| BSP129H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Gate-source voltage: ±20V
auf Bestellung 1302 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 120+ | 0.6 EUR |
| 151+ | 0.47 EUR |
| 160+ | 0.45 EUR |
| IRS2304SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 220ns
Power: 625mW
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 220ns
Power: 625mW
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.72 EUR |
| 36+ | 1.99 EUR |
| 47+ | 1.53 EUR |
| BAR6402VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Case: SC79
Max. off-state voltage: 150V
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Case: SC79
Max. off-state voltage: 150V
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 290+ | 0.25 EUR |
| 485+ | 0.15 EUR |
| 530+ | 0.14 EUR |
| 605+ | 0.12 EUR |
| BAR6405WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Case: SOT323
Max. off-state voltage: 150V
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Case: SOT323
Max. off-state voltage: 150V
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 391+ | 0.18 EUR |
| 447+ | 0.16 EUR |
| 468+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| IRFZ46NLPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 54+ | 1.33 EUR |
| 65+ | 1.1 EUR |
| 72+ | 1 EUR |
| IRFZ46NPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 74+ | 0.97 EUR |
| ICE2HS01GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 6mA
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 6mA
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2112PBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.36 EUR |
| 25+ | 2.86 EUR |
| IR2112SPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.55 EUR |
| 24+ | 3.06 EUR |
| 25+ | 2.87 EUR |
| IR2112STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.87 EUR |
| 33+ | 2.23 EUR |
| 35+ | 2.07 EUR |
| IR2121PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Case: DIP8
Type of integrated circuit: driver
Mounting: THT
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Operating temperature: -40...125°C
Output current: -2...1A
Turn-off time: 105ns
Turn-on time: 150ns
Power: 1W
Number of channels: 1
Voltage class: 5V
Supply voltage: 12...18V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Case: DIP8
Type of integrated circuit: driver
Mounting: THT
Kind of integrated circuit: gate driver; high-/low-side
Kind of package: tube
Operating temperature: -40...125°C
Output current: -2...1A
Turn-off time: 105ns
Turn-on time: 150ns
Power: 1W
Number of channels: 1
Voltage class: 5V
Supply voltage: 12...18V DC
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.76 EUR |
| 28+ | 2.57 EUR |
| BTS4140N |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 1Ω
Supply voltage: 4.9...60V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 1Ω
Supply voltage: 4.9...60V DC
Technology: Classic PROFET
auf Bestellung 1557 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 53+ | 1.36 EUR |
| 60+ | 1.2 EUR |
| 100+ | 1.09 EUR |
| 500+ | 1.06 EUR |
| IRFB3006PBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| IM69D120V01XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM69D130V01XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFB4410PBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.66 EUR |
| 44+ | 1.63 EUR |
| 54+ | 1.33 EUR |
| 100+ | 1.22 EUR |
| IRFB4410ZPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.16 EUR |
| 37+ | 1.97 EUR |
| 49+ | 1.47 EUR |
| 56+ | 1.29 EUR |
| 66+ | 1.09 EUR |
| 100+ | 0.99 EUR |
| 200+ | 0.89 EUR |
| 500+ | 0.82 EUR |
| SPA15N60C3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.4 EUR |
| AIHD15N60RATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 26ns
Turn-off time: 319ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 26ns
Turn-off time: 319ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AIHD15N60RFATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 28ns
Turn-off time: 177ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 28ns
Turn-off time: 177ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS4142N |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.15Ω
Supply voltage: 12...45V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.15Ω
Supply voltage: 12...45V DC
Technology: Classic PROFET
auf Bestellung 387 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.66 EUR |
| 28+ | 2.6 EUR |
| 40+ | 2.2 EUR |
| 80+ | 2.03 EUR |
| 100+ | 1.96 EUR |
| 250+ | 1.74 EUR |
| IHW30N135R5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.25 EUR |
| 25+ | 2.86 EUR |
| 30+ | 2.55 EUR |
| IPB027N10N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB027N10N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLR3636TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1080 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 51+ | 1.43 EUR |
| 58+ | 1.25 EUR |
| 66+ | 1.09 EUR |
| 100+ | 0.95 EUR |
| 250+ | 0.82 EUR |
| 500+ | 0.76 EUR |
| BTS6163D |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
auf Bestellung 1528 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.23 EUR |
| 17+ | 4.42 EUR |
| 100+ | 3.76 EUR |
| BTS716GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Supply voltage: 5.5...40V DC
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SO20
Turn-off time: 0.25ms
Turn-on time: 270µs
On-state resistance: 35mΩ
Output current: 2.6...5.3A
Power dissipation: 3.6W
Number of channels: 4
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Supply voltage: 5.5...40V DC
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SO20
Turn-off time: 0.25ms
Turn-on time: 270µs
On-state resistance: 35mΩ
Output current: 2.6...5.3A
Power dissipation: 3.6W
Number of channels: 4
Technology: Classic PROFET
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.03 EUR |
| 22+ | 3.27 EUR |
| 25+ | 3.13 EUR |
| IKW75N60TFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 401ns
Gate-emitter voltage: ±20V
Gate charge: 470nC
Pulsed collector current: 225A
Turn-on time: 69ns
Technology: TRENCHSTOP™
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 401ns
Gate-emitter voltage: ±20V
Gate charge: 470nC
Pulsed collector current: 225A
Turn-on time: 69ns
Technology: TRENCHSTOP™
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.78 EUR |
| 12+ | 6.26 EUR |
| 13+ | 5.88 EUR |
| IRFR3910TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1592 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 113+ | 0.63 EUR |
| 120+ | 0.6 EUR |
| 125+ | 0.59 EUR |
| 250+ | 0.55 EUR |
| 500+ | 0.54 EUR |
| BSS123NH6433XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 9813 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 343+ | 0.21 EUR |
| 529+ | 0.14 EUR |
| 641+ | 0.11 EUR |
| 947+ | 0.076 EUR |
| 1090+ | 0.066 EUR |
| 5000+ | 0.052 EUR |
| PVDZ172NPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 1.5A
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Type of relay: solid state
Switched voltage: 0...60V DC
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
On-state resistance: 0.25Ω
Max. operating current: 1.5A
Control voltage: 1.2V DC
Contacts configuration: SPST-NO
Manufacturer series: PVDZ172NPbF
Relay variant: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 1.5A
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Type of relay: solid state
Switched voltage: 0...60V DC
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
On-state resistance: 0.25Ω
Max. operating current: 1.5A
Control voltage: 1.2V DC
Contacts configuration: SPST-NO
Manufacturer series: PVDZ172NPbF
Relay variant: MOSFET
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.44 EUR |
| 10+ | 10.57 EUR |
| 25+ | 10.11 EUR |
| IRS21867STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
auf Bestellung 1589 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.07 EUR |
| 2EDL05N06PFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
auf Bestellung 1249 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.47 EUR |
| 53+ | 1.37 EUR |
| BTS462T |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 1462 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.3 EUR |
| 34+ | 2.12 EUR |
| 36+ | 2.02 EUR |
| BAT1504WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.11A; 100mW
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.1W
Load current: 0.11A
Max. off-state voltage: 4V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.11A; 100mW
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.1W
Load current: 0.11A
Max. off-state voltage: 4V
auf Bestellung 773 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 174+ | 0.41 EUR |
| 194+ | 0.37 EUR |
| 227+ | 0.32 EUR |
| 281+ | 0.25 EUR |
| BTS711L1 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1149 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.16 EUR |
| 16+ | 4.72 EUR |
| 25+ | 4.35 EUR |
| 50+ | 4.26 EUR |
| BSS123IXTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.15A
Pulsed drain current: 0.77A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.63nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.15A
Pulsed drain current: 0.77A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.63nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS123NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 20876 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 642+ | 0.11 EUR |
| 685+ | 0.1 EUR |
| 857+ | 0.084 EUR |
| 1029+ | 0.069 EUR |
| 1161+ | 0.062 EUR |
| 3000+ | 0.054 EUR |
| BSZ110N06NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ110N08NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 40A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 40A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2130SPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.16 EUR |
| 12+ | 6.26 EUR |
| 13+ | 5.79 EUR |
| IRFB4332PbF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| AIHD10N60RFATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS21094PBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.59 EUR |
| 47+ | 1.53 EUR |
| IRS2108SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| IRFB3307ZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.72 EUR |
| 29+ | 2.55 EUR |
| 35+ | 2.04 EUR |
| 39+ | 1.84 EUR |
| 50+ | 1.62 EUR |
| IRFR120NTRPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 432 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 108+ | 0.67 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.48 EUR |
| IRFR6215TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1103 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 55+ | 1.31 EUR |
| 64+ | 1.13 EUR |
| 100+ | 0.89 EUR |
| 250+ | 0.76 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |
| BC856SH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1202 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 365+ | 0.2 EUR |
| 557+ | 0.13 EUR |
| 746+ | 0.096 EUR |
| 1000+ | 0.086 EUR |
| BSP170PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 717 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 94+ | 0.76 EUR |
| 128+ | 0.56 EUR |
| 145+ | 0.5 EUR |
| 200+ | 0.44 EUR |
| 500+ | 0.38 EUR |
| IRL7833STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Kind of package: reel
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 140W
Drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Kind of package: reel
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 140W
Drain current: 150A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD90N04S405ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Technology: OptiMOS™ T2
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 61A
Power dissipation: 65W
Pulsed drain current: 344A
Case: PG-TO252-3-313
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.2mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Technology: OptiMOS™ T2
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 61A
Power dissipation: 65W
Pulsed drain current: 344A
Case: PG-TO252-3-313
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.2mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD068P03L3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Gate-source voltage: ±20V
Power dissipation: 100W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: -70A
Drain-source voltage: -30V
On-state resistance: 11mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Gate-source voltage: ±20V
Power dissipation: 100W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: -70A
Drain-source voltage: -30V
On-state resistance: 11mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPA07N60C3 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.8 EUR |
| 51+ | 1.42 EUR |
| 66+ | 1.09 EUR |
| 80+ | 0.9 EUR |