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IRFS7437TRLPBF IRFS7437TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF862685D275EA&compId=IRFS7437TRLPBF.pdf?ci_sign=a3f823d66bb8afd4cb57907e326fc5e790c54ebf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 638 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.1 EUR
Mindestbestellmenge: 35
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BSC252N10NSFGATMA1 BSC252N10NSFGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB4E314A0011C&compId=BSC252N10NSFG-DTE.pdf?ci_sign=ec7850502a6223baabd11b26da46ad4a4a538a22 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR6225TRPBF IRLR6225TRPBF INFINEON TECHNOLOGIES irlr6225pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1973 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
92+0.79 EUR
108+0.67 EUR
116+0.62 EUR
250+0.55 EUR
Mindestbestellmenge: 61
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IRF7410TRPBF IRF7410TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A23D233598F1A303005056AB0C4F&compId=irf7410pbf.pdf?ci_sign=ed56f1efe816eb53c277cc5a0dcc077dfacc8801 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB7446PBF IRFB7446PBF INFINEON TECHNOLOGIES IRFB7446PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
On-state resistance: 3.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 62nC
Trade name: StrongIRFET
auf Bestellung 55 Stücke:
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47+1.54 EUR
55+1.3 EUR
Mindestbestellmenge: 47
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IRF7832TRPBF IRF7832TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AC5A4F034FF1A303005056AB0C4F&compId=irf7832pbf.pdf?ci_sign=f6126aa60b44ed174e53d7e45af6de5bc1178cf8 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 502 Stücke:
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91+0.79 EUR
95+0.76 EUR
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BSP135H6327XTSA1 BSP135H6327XTSA1 INFINEON TECHNOLOGIES BSP135H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
auf Bestellung 1150 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
77+0.93 EUR
92+0.78 EUR
100+0.72 EUR
200+0.66 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.56 EUR
Mindestbestellmenge: 56
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IAUZ40N08S5N100ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2101SPBF IRS2101SPBF INFINEON TECHNOLOGIES irs2101pbf.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 230ns
Power: 625mW
Part status: Not recommended for new designs
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
71+1.02 EUR
88+0.82 EUR
95+0.76 EUR
Mindestbestellmenge: 63
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BAT1705WH6327XTSA1 BAT1705WH6327XTSA1 INFINEON TECHNOLOGIES BAT1704E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Power dissipation: 0.15W
auf Bestellung 628 Stücke:
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628+0.11 EUR
Mindestbestellmenge: 628
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IRLMS5703TRPBF IRLMS5703TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227D26FA7464F1A303005056AB0C4F&compId=irlms5703pbf.pdf?ci_sign=38add10ed924f0e4045c7b62faae0750f826b459 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRS2168DSTRPBF IRS2168DSTRPBF INFINEON TECHNOLOGIES irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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BGSX22G2A10E6327XTSA1 BGSX22G2A10E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFB2A0C02A73D1&compId=BGSX22G2A10.pdf?ci_sign=111a42298677fba8d83d7c2b08f085f6ec5f0ed5 Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Application: telecommunication
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Number of channels: 2
Bandwidth: 0.1...6GHz
Case: ATSLP-10-2
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
Mindestbestellmenge: 61
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BAT6405WH6327XTSA1 BAT6405WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
500+0.14 EUR
550+0.13 EUR
736+0.097 EUR
893+0.08 EUR
Mindestbestellmenge: 385
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IRF4104PBF IRF4104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7AF6F1A6F5005056AB5A8F&compId=irf4104.pdf?ci_sign=13dddd15d243d1a7f4c02de7c9114bd8bbce11a4 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Technology: HEXFET®
Case: TO220AB
Kind of channel: enhancement
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 5.5mΩ
Power dissipation: 140W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
57+1.27 EUR
66+1.09 EUR
100+1 EUR
Mindestbestellmenge: 40
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1ED020I12F2XUMA1 1ED020I12F2XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD881E853F2259&compId=1ED020I12-F2.pdf?ci_sign=7a0aa10f2c5c9bc192268ae50cfca85594182ebe Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -2...2A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-16-15
Supply voltage: 0...28V; 4.5...5.5V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 0.6/1.2kV
Technology: EiceDRIVER™
Topology: single transistor
Protection: undervoltage UVP
auf Bestellung 986 Stücke:
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17+4.33 EUR
20+3.72 EUR
21+3.42 EUR
Mindestbestellmenge: 17
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1ED020I12FA2XUMA2 INFINEON TECHNOLOGIES Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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1ED020I12FXUMA2 INFINEON TECHNOLOGIES 1ED020I12-F_Ver2.3_May2011.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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BFP760H6327XTSA1 BFP760H6327XTSA1 INFINEON TECHNOLOGIES BFP760.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Current gain: 160...400
Frequency: 45GHz
Polarisation: bipolar
Kind of transistor: HBT; RF
Type of transistor: NPN
Kind of package: reel; tape
Technology: SiGe:C
Mounting: SMD
Case: SOT343
auf Bestellung 2049 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
209+0.34 EUR
232+0.31 EUR
262+0.27 EUR
Mindestbestellmenge: 173
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IPA80R900P7XKSA1 IPA80R900P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD451B19C0143&compId=IPA80R900P7.pdf?ci_sign=4099e9ca1d487bf2abc3da68f46df64d1678847d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Mounting: THT
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 27W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
55+1.3 EUR
71+1.02 EUR
Mindestbestellmenge: 44
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BAS3005B02VH6327XTSA1 BAS3005B02VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF44459099C469&compId=BAS3005B02VH6327XT.pdf?ci_sign=78eead26a8a3e3ccae040d2a59e4ef7c2af2aac4 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Type of diode: Schottky switching
auf Bestellung 1660 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
410+0.17 EUR
532+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 358
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BTS6133D BTS6133D INFINEON TECHNOLOGIES BTS6133D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.52 EUR
26+2.79 EUR
31+2.36 EUR
34+2.16 EUR
Mindestbestellmenge: 16
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BTS6143D BTS6143D INFINEON TECHNOLOGIES BTS6143D.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2314 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
28+2.57 EUR
30+2.43 EUR
50+2.32 EUR
100+2.2 EUR
250+2.06 EUR
Mindestbestellmenge: 24
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TT215N22KOF TT215N22KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE6233D8518469&compId=TT215N22KOF.pdf?ci_sign=16d94dac587ccb4d664cead3a8217b67fb2e7f68 Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BA89202VH6127XTSA1 BA89202VH6127XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6 Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 2272 Stücke:
Lieferzeit 14-21 Tag (e)
582+0.12 EUR
962+0.074 EUR
1260+0.057 EUR
1454+0.049 EUR
Mindestbestellmenge: 582
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FF200R12KT4HOSA1 FF200R12KT4HOSA1 INFINEON TECHNOLOGIES FF200R12KT4.pdf Category: IGBT modules
Description: Semiconductor module: IGBT; transistor/transistor; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
1+107.25 EUR
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES FF45MR12W1M1B11.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+74.82 EUR
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IPAN70R750P7SXKSA1 IPAN70R750P7SXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC73D185F653D1&compId=IPAN70R750P7S.pdf?ci_sign=8dce55abf8132a1c9306f3e6d758a5133e9ded1c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Mounting: THT
Case: TO220FP
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.75Ω
Drain current: 4A
Gate-source voltage: ±16V
Power dissipation: 20.8W
Drain-source voltage: 700V
auf Bestellung 193 Stücke:
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132+0.54 EUR
141+0.51 EUR
148+0.48 EUR
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BAS7006WH6327XTSA1 BAS7006WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
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358+0.2 EUR
407+0.18 EUR
589+0.12 EUR
863+0.083 EUR
1005+0.071 EUR
3000+0.058 EUR
Mindestbestellmenge: 358
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1EDN7550BXTSA1 1EDN7550BXTSA1 INFINEON TECHNOLOGIES 1EDN7550B.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Case: PG-SOT23-6
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
79+0.91 EUR
87+0.82 EUR
102+0.71 EUR
250+0.68 EUR
500+0.66 EUR
1000+0.62 EUR
Mindestbestellmenge: 70
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IRLMS1902TRPBF IRLMS1902TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227CD3BEA965F1A303005056AB0C4F&compId=irlms1902pbf.pdf?ci_sign=e136a626b5a031e6f0ab75cf9615f2ae6f830f66 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLMS1503TRPBF IRLMS1503TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227CBB1072A5F1A303005056AB0C4F&compId=irlms1503pbf.pdf?ci_sign=6735421fd4c509c3d1d98293129cb2545deb82bc description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFSL4010PBF IRFSL4010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C7C5DE110DF1A303005056AB0C4F&compId=irfs4010pbf.pdf?ci_sign=a979ab89e260f0c2fefc1124d2422354bfef6092 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 375W
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IRS2104SPBF IRS2104SPBF INFINEON TECHNOLOGIES irs2104.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 116 Stücke:
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42+1.73 EUR
44+1.63 EUR
50+1.43 EUR
95+1.3 EUR
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BSS84PH6327XTSA2 BSS84PH6327XTSA2 INFINEON TECHNOLOGIES BSS84P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -140mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
Produkt ist nicht verfügbar
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IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EE217E26F1BF&compId=IPB65R099C6-DTE.pdf?ci_sign=715c1f68c860329bf7686cf793fb138854a750db Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8EF625A16D1BF&compId=IPI65R099C6-DTE.pdf?ci_sign=b7ecdbd0817188c32fbc3bd9e75ec036c5cb4a3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB914862BA111BF&compId=IPL65R099C7-DTE.pdf?ci_sign=6b815f4bb7536f080aad6f5d4850b9f64b26de1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB944D4022D91BF&compId=IPP65R099C6-DTE.pdf?ci_sign=59108e7d9ce3a0b6f5caf391c2a545255e688e7a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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BAT6404WH6327XTSA1 BAT6404WH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 4005 Stücke:
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334+0.21 EUR
481+0.15 EUR
579+0.12 EUR
669+0.11 EUR
766+0.093 EUR
911+0.079 EUR
Mindestbestellmenge: 334
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BAT6406WH6327XTSA1 BAT6406WH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 10226 Stücke:
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264+0.27 EUR
410+0.17 EUR
562+0.13 EUR
642+0.11 EUR
848+0.084 EUR
Mindestbestellmenge: 264
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IR11672ASTRPBF INFINEON TECHNOLOGIES ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -7...2A
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 11.4...18V DC
Power: 625mW
Voltage class: 200V
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
34+2.13 EUR
38+1.93 EUR
42+1.72 EUR
Mindestbestellmenge: 29
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BAS7004WH6327XTSA1 BAS7004WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
455+0.16 EUR
682+0.1 EUR
911+0.079 EUR
Mindestbestellmenge: 334
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IKW25N120CS7XKSA1 IKW25N120CS7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD0B0F44D995C9360E3&compId=IKW25N120CS7.pdf?ci_sign=1e73c45d8ac65dc200dcd3a129bd51a00da2b0d9 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-off time: 490ns
auf Bestellung 58 Stücke:
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36+2 EUR
39+1.84 EUR
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IKW40N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 45ns
Turn-off time: 0.5µs
Produkt ist nicht verfügbar
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IRS2184STRPBF IRS2184STRPBF INFINEON TECHNOLOGIES irs2184.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 290ns
Turn-on time: 720ns
Power: 625mW
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.86 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 39
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IRS2453DSTRPBF IRS2453DSTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7ED3F1A6F5005056AB5A8F&compId=irs2453d.pdf?ci_sign=d32bc0a67105279d411e7001c66a71b342acb3d4 Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
auf Bestellung 2454 Stücke:
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41+1.77 EUR
55+1.3 EUR
57+1.27 EUR
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IR21094STRPBF IR21094STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
auf Bestellung 1529 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
50+1.44 EUR
54+1.34 EUR
57+1.26 EUR
100+1.2 EUR
250+1.19 EUR
Mindestbestellmenge: 38
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BAR6502VH6327XTSA1 INFINEON TECHNOLOGIES bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0 Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: varicap
Capacitance: 0.5pF
Leakage current: 20nA
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Produkt ist nicht verfügbar
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FM24CL64B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FM24C64B-GTR INFINEON TECHNOLOGIES Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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S29AL008J55TFIR23 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29GL256S10DHA020 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29GL256S10DHB020 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S29GL256S10DHB023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S29GL256S10DHI010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHI020 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHI023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29GL256S10DHIV10 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHIV20 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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IRFS7437TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF862685D275EA&compId=IRFS7437TRLPBF.pdf?ci_sign=a3f823d66bb8afd4cb57907e326fc5e790c54ebf
IRFS7437TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 638 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
Mindestbestellmenge: 35
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BSC252N10NSFGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB4E314A0011C&compId=BSC252N10NSFG-DTE.pdf?ci_sign=ec7850502a6223baabd11b26da46ad4a4a538a22
BSC252N10NSFGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR6225TRPBF irlr6225pbf.pdf
IRLR6225TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1973 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
92+0.79 EUR
108+0.67 EUR
116+0.62 EUR
250+0.55 EUR
Mindestbestellmenge: 61
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IRF7410TRPBF pVersion=0046&contRep=ZT&docId=E221A23D233598F1A303005056AB0C4F&compId=irf7410pbf.pdf?ci_sign=ed56f1efe816eb53c277cc5a0dcc077dfacc8801
IRF7410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB7446PBF IRFB7446PBF.pdf
IRFB7446PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
On-state resistance: 3.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 62nC
Trade name: StrongIRFET
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
55+1.3 EUR
Mindestbestellmenge: 47
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IRF7832TRPBF description pVersion=0046&contRep=ZT&docId=E221AC5A4F034FF1A303005056AB0C4F&compId=irf7832pbf.pdf?ci_sign=f6126aa60b44ed174e53d7e45af6de5bc1178cf8
IRF7832TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
95+0.76 EUR
Mindestbestellmenge: 91
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BSP135H6327XTSA1 BSP135H6327XTSA1.pdf
BSP135H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
auf Bestellung 1150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
77+0.93 EUR
92+0.78 EUR
100+0.72 EUR
200+0.66 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.56 EUR
Mindestbestellmenge: 56
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IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2101SPBF description irs2101pbf.pdf
IRS2101SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 230ns
Power: 625mW
Part status: Not recommended for new designs
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
71+1.02 EUR
88+0.82 EUR
95+0.76 EUR
Mindestbestellmenge: 63
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BAT1705WH6327XTSA1 BAT1704E6327HTSA1.pdf
BAT1705WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Power dissipation: 0.15W
auf Bestellung 628 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
628+0.11 EUR
Mindestbestellmenge: 628
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IRLMS5703TRPBF pVersion=0046&contRep=ZT&docId=E2227D26FA7464F1A303005056AB0C4F&compId=irlms5703pbf.pdf?ci_sign=38add10ed924f0e4045c7b62faae0750f826b459
IRLMS5703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRS2168DSTRPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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BGSX22G2A10E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFB2A0C02A73D1&compId=BGSX22G2A10.pdf?ci_sign=111a42298677fba8d83d7c2b08f085f6ec5f0ed5
BGSX22G2A10E6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Application: telecommunication
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Number of channels: 2
Bandwidth: 0.1...6GHz
Case: ATSLP-10-2
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
Mindestbestellmenge: 61
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BAT6405WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
500+0.14 EUR
550+0.13 EUR
736+0.097 EUR
893+0.08 EUR
Mindestbestellmenge: 385
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IRF4104PBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7AF6F1A6F5005056AB5A8F&compId=irf4104.pdf?ci_sign=13dddd15d243d1a7f4c02de7c9114bd8bbce11a4
IRF4104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Technology: HEXFET®
Case: TO220AB
Kind of channel: enhancement
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 5.5mΩ
Power dissipation: 140W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
57+1.27 EUR
66+1.09 EUR
100+1 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12F2XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD881E853F2259&compId=1ED020I12-F2.pdf?ci_sign=7a0aa10f2c5c9bc192268ae50cfca85594182ebe
1ED020I12F2XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -2...2A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-16-15
Supply voltage: 0...28V; 4.5...5.5V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 0.6/1.2kV
Technology: EiceDRIVER™
Topology: single transistor
Protection: undervoltage UVP
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
20+3.72 EUR
21+3.42 EUR
Mindestbestellmenge: 17
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1ED020I12FA2XUMA2 Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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1ED020I12FXUMA2 1ED020I12-F_Ver2.3_May2011.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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BFP760H6327XTSA1 BFP760.pdf
BFP760H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Current gain: 160...400
Frequency: 45GHz
Polarisation: bipolar
Kind of transistor: HBT; RF
Type of transistor: NPN
Kind of package: reel; tape
Technology: SiGe:C
Mounting: SMD
Case: SOT343
auf Bestellung 2049 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
209+0.34 EUR
232+0.31 EUR
262+0.27 EUR
Mindestbestellmenge: 173
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IPA80R900P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD451B19C0143&compId=IPA80R900P7.pdf?ci_sign=4099e9ca1d487bf2abc3da68f46df64d1678847d
IPA80R900P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Mounting: THT
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 27W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
55+1.3 EUR
71+1.02 EUR
Mindestbestellmenge: 44
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BAS3005B02VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF44459099C469&compId=BAS3005B02VH6327XT.pdf?ci_sign=78eead26a8a3e3ccae040d2a59e4ef7c2af2aac4
BAS3005B02VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Type of diode: Schottky switching
auf Bestellung 1660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
410+0.17 EUR
532+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 358
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BTS6133D BTS6133D.pdf
BTS6133D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
26+2.79 EUR
31+2.36 EUR
34+2.16 EUR
Mindestbestellmenge: 16
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BTS6143D description BTS6143D.pdf
BTS6143D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
28+2.57 EUR
30+2.43 EUR
50+2.32 EUR
100+2.2 EUR
250+2.06 EUR
Mindestbestellmenge: 24
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TT215N22KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE6233D8518469&compId=TT215N22KOF.pdf?ci_sign=16d94dac587ccb4d664cead3a8217b67fb2e7f68
TT215N22KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BA89202VH6127XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6
BA89202VH6127XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 2272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
582+0.12 EUR
962+0.074 EUR
1260+0.057 EUR
1454+0.049 EUR
Mindestbestellmenge: 582
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FF200R12KT4HOSA1 FF200R12KT4.pdf
FF200R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Semiconductor module: IGBT; transistor/transistor; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+107.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11.pdf
FF45MR12W1M1B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+74.82 EUR
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IPAN70R750P7SXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC73D185F653D1&compId=IPAN70R750P7S.pdf?ci_sign=8dce55abf8132a1c9306f3e6d758a5133e9ded1c
IPAN70R750P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Mounting: THT
Case: TO220FP
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.75Ω
Drain current: 4A
Gate-source voltage: ±16V
Power dissipation: 20.8W
Drain-source voltage: 700V
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
132+0.54 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 117
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BAS7006WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7006WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
407+0.18 EUR
589+0.12 EUR
863+0.083 EUR
1005+0.071 EUR
3000+0.058 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
1EDN7550BXTSA1 1EDN7550B.pdf
1EDN7550BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Case: PG-SOT23-6
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
79+0.91 EUR
87+0.82 EUR
102+0.71 EUR
250+0.68 EUR
500+0.66 EUR
1000+0.62 EUR
Mindestbestellmenge: 70
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IRLMS1902TRPBF pVersion=0046&contRep=ZT&docId=E2227CD3BEA965F1A303005056AB0C4F&compId=irlms1902pbf.pdf?ci_sign=e136a626b5a031e6f0ab75cf9615f2ae6f830f66
IRLMS1902TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS1503TRPBF description pVersion=0046&contRep=ZT&docId=E2227CBB1072A5F1A303005056AB0C4F&compId=irlms1503pbf.pdf?ci_sign=6735421fd4c509c3d1d98293129cb2545deb82bc
IRLMS1503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL4010PBF description pVersion=0046&contRep=ZT&docId=E221C7C5DE110DF1A303005056AB0C4F&compId=irfs4010pbf.pdf?ci_sign=a979ab89e260f0c2fefc1124d2422354bfef6092
IRFSL4010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 375W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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IRS2104SPBF irs2104.pdf
IRS2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
44+1.63 EUR
50+1.43 EUR
95+1.3 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PH6327XTSA2 BSS84P.pdf
BSS84PH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -140mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
Produkt ist nicht verfügbar
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IPB65R099C6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EE217E26F1BF&compId=IPB65R099C6-DTE.pdf?ci_sign=715c1f68c860329bf7686cf793fb138854a750db
IPB65R099C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R099C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8EF625A16D1BF&compId=IPI65R099C6-DTE.pdf?ci_sign=b7ecdbd0817188c32fbc3bd9e75ec036c5cb4a3a
IPI65R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R099C7AUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB914862BA111BF&compId=IPL65R099C7-DTE.pdf?ci_sign=6b815f4bb7536f080aad6f5d4850b9f64b26de1b
IPL65R099C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R099C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB944D4022D91BF&compId=IPP65R099C6-DTE.pdf?ci_sign=59108e7d9ce3a0b6f5caf391c2a545255e688e7a
IPP65R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6404WH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 4005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
481+0.15 EUR
579+0.12 EUR
669+0.11 EUR
766+0.093 EUR
911+0.079 EUR
Mindestbestellmenge: 334
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BAT6406WH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6406WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 10226 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
410+0.17 EUR
562+0.13 EUR
642+0.11 EUR
848+0.084 EUR
Mindestbestellmenge: 264
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IR11672ASTRPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -7...2A
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 11.4...18V DC
Power: 625mW
Voltage class: 200V
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
34+2.13 EUR
38+1.93 EUR
42+1.72 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
BAS7004WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7004WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
455+0.16 EUR
682+0.1 EUR
911+0.079 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120CS7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0B0F44D995C9360E3&compId=IKW25N120CS7.pdf?ci_sign=1e73c45d8ac65dc200dcd3a129bd51a00da2b0d9
IKW25N120CS7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-off time: 490ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
39+1.84 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS7XKSA1 Infineon-IKW40N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d952805a0
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 45ns
Turn-off time: 0.5µs
Produkt ist nicht verfügbar
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IRS2184STRPBF irs2184.pdf
IRS2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 290ns
Turn-on time: 720ns
Power: 625mW
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRS2453DSTRPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7ED3F1A6F5005056AB5A8F&compId=irs2453d.pdf?ci_sign=d32bc0a67105279d411e7001c66a71b342acb3d4
IRS2453DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
auf Bestellung 2454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
55+1.3 EUR
57+1.27 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IR21094STRPBF IR21094SPBF.pdf
IR21094STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
auf Bestellung 1529 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
50+1.44 EUR
54+1.34 EUR
57+1.26 EUR
100+1.2 EUR
250+1.19 EUR
Mindestbestellmenge: 38
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BAR6502VH6327XTSA1 bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: varicap
Capacitance: 0.5pF
Leakage current: 20nA
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Produkt ist nicht verfügbar
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FM24CL64B-DGTR Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FM24C64B-GTR Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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S29AL008J55TFIR23 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29GL256S10DHA020
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S29GL256S10DHB020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S29GL256S10DHB023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S29GL256S10DHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHI023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29GL256S10DHIV10 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHIV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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