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IRS4427PBF IRS4427PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA864536E4D93D7&compId=IRS4427PBF.pdf?ci_sign=18bc1ab6bdaf203e717df27cfa52960c5ee10db1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
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FZ600R12KE3HOSA1 FZ600R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B429DD0D2FC469&compId=FZ600R12KE3.pdf?ci_sign=868834a23490657b7f01821c752b76da3c7c6933 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Produkt ist nicht verfügbar
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FZ400R12KS4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABBD2E6ABB71060C7&compId=FZ400R12KS4.pdf?ci_sign=38ee09c54c6e231e906f63e53875a0cb78b3b52e Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Produkt ist nicht verfügbar
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FF450R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FF450R12KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF791B428A7DE27&compId=FF450R12KE4-DTE.pdf?ci_sign=ea990a008d4cd0a41ce5a30a9a09bff4050731f0 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FZ900R12KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F18F860860D5&compId=FZ900R12KE4.pdf?ci_sign=23fa0b5b27e80ccd677c32a3a61818263e8ce358 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Produkt ist nicht verfügbar
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DF400R12KE3HOSA1 DF400R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDF8B8F122253D7&compId=DF400R12KE3.pdf?ci_sign=c0ee8fc01e207ac3de7635995e03cffedee02f43 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
Topology: buck chopper
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 FF200R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FD6BFDD0F906745&compId=FF200R12KE3.pdf?ci_sign=f153117c762ff8f8b62ebc993737473163b2a468 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT half-bridge
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
1+211.07 EUR
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TT260N22KOFHOSA1 TT260N22KOFHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE7AC9E2082469&compId=TT260N22KOF.pdf?ci_sign=28d540274c7a6cf55effab82fa3567854f9dd7f9 Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A398A572F53D7&compId=FF200R12KT3E.pdf?ci_sign=7d379c22644bc6b2701cdde2fb53b0018b9a5173 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT x2
Produkt ist nicht verfügbar
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FF300R12KT3EHOSA1 FF300R12KT3EHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A6B34C2C213D7&compId=FF300R12KT3E.pdf?ci_sign=fd144bb2674acaa882bf1dd9f81d465f7011f7f3 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Topology: IGBT x2
Produkt ist nicht verfügbar
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FF200R12KE4PHOSA1 FF200R12KE4PHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A348FD319B3D7&compId=FF200R12KE4P.pdf?ci_sign=c3b8d527485471d02faae9add4b3248119e8cbfe Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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BTS724G BTS724G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBC9E5A998E90469&compId=BTS724G.pdf?ci_sign=fdbdc60cc29109e80227e1510eebe17cccc6aecd Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Mounting: SMD
Number of channels: 4
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 22.5mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 992 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.24 EUR
13+5.81 EUR
15+5 EUR
25+4.13 EUR
50+3.88 EUR
Mindestbestellmenge: 10
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BCR141E6327 BCR141E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C592F4B4A0A469&compId=BCR141.pdf?ci_sign=6735c9f133de00805775cd3a1803dbbcf5242143 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Mounting: SMD
Type of transistor: NPN
Kind of transistor: BRT
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
Frequency: 130MHz
auf Bestellung 4138 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
246+0.29 EUR
401+0.18 EUR
474+0.15 EUR
688+0.1 EUR
788+0.091 EUR
1000+0.081 EUR
3000+0.068 EUR
Mindestbestellmenge: 179
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IRLTS6342TRPBF IRLTS6342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22282476BD4DAF1A303005056AB0C4F&compId=irlts6342pbf.pdf?ci_sign=e247a54c761d43482cdc3c03bb2b306196ea7d84 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1228 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
293+0.24 EUR
332+0.22 EUR
368+0.19 EUR
404+0.18 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 218
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ITS4141NHUMA1 ITS4141NHUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6DF8054C3B5EA&compId=ITS4141N.pdf?ci_sign=e124ff2bc030b4d051faaf0434cbcb829927b7f4 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Operating temperature: -30...85°C
Case: SOT223
Supply voltage: 12...45V DC
Kind of package: reel; tape
On-state resistance: 0.2Ω
Technology: Industrial PROFET
Kind of output: N-Channel
Turn-off time: 0.1ms
Turn-on time: 150µs
Power dissipation: 1.4W
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
54+1.34 EUR
59+1.22 EUR
Mindestbestellmenge: 40
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BTS3405G BTS3405G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E076C4E98469&compId=BTS3405G.pdf?ci_sign=8f9574202640d62b6b0b3043218a9c425ff98c55 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Case: PG-DSO-8-25
On-state resistance: 0.35Ω
Output voltage: 10V
Technology: HITFET®
Kind of output: N-Channel
auf Bestellung 2207 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.7 EUR
42+1.73 EUR
47+1.54 EUR
100+1.42 EUR
Mindestbestellmenge: 27
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BAT1704E6327HTSA1 BAT1704E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Semiconductor structure: double series
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.13A
Power dissipation: 0.15W
Max. forward voltage: 0.6V
Max. off-state voltage: 4V
auf Bestellung 2679 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
511+0.14 EUR
556+0.13 EUR
618+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 417
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BSZ105N04NSGATMA1 BSZ105N04NSGATMA1 INFINEON TECHNOLOGIES BSZ105N04NSG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
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BCR112E6327HTSA1
+1
 		BCR112E6327HTSA1 INFINEON TECHNOLOGIES bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 1028 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
625+0.11 EUR
749+0.096 EUR
863+0.083 EUR
991+0.072 EUR
1028+0.07 EUR
Mindestbestellmenge: 455
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BCR148E6327 BCR148E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58B4B5D02A469&compId=BCR148.pdf?ci_sign=e97eb104b0c53699eb1c27d2f3eeba910076f276 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Mounting: SMD
Type of transistor: NPN
Kind of transistor: BRT
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Frequency: 100MHz
auf Bestellung 2145 Stücke:
Lieferzeit 14-21 Tag (e)
792+0.09 EUR
878+0.082 EUR
993+0.072 EUR
1145+0.062 EUR
Mindestbestellmenge: 792
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IRFL024ZTRPBF IRFL024ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE3F07F0275EA&compId=IRFL024ZTRPBF.pdf?ci_sign=8c23d246f7a2ed4b15ce6df643c8a84d048dd9c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BTS50085-1TMA BTS50085-1TMA INFINEON TECHNOLOGIES BTS50085-1TMA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
auf Bestellung 447 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.76 EUR
11+7.05 EUR
25+6.49 EUR
50+6.25 EUR
Mindestbestellmenge: 10
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BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Semiconductor structure: double independent
Type of diode: Schottky switching
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
248+0.29 EUR
291+0.25 EUR
521+0.14 EUR
750+0.095 EUR
1000+0.083 EUR
Mindestbestellmenge: 193
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IRLR3915TRPBF IRLR3915TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF127303F0515EA&compId=IRLR3915TRPBF.pdf?ci_sign=2a546e3321d7785d96f1b8df8cb817a035b9b316 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BA885E6327 BA885E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999BC51ABD17E27&compId=BAx95-DTE.pdf?ci_sign=2fc9f1d8e133c7a4c3202608515580a89c97324a Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
1064+0.067 EUR
1087+0.066 EUR
Mindestbestellmenge: 1064
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BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D950ECCBD011C&compId=BSC109N10NS3G-DTE.pdf?ci_sign=73b03e08e383856ad99c6b662e0bfa1e3d0a5de9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.9mΩ
Drain current: 63A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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BAS7005WH6327XTSA1 BAS7005WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 2850 Stücke:
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334+0.21 EUR
432+0.17 EUR
625+0.11 EUR
834+0.086 EUR
1000+0.075 EUR
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IRF3805PBF IRF3805PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7ADAF1A6F5005056AB5A8F&compId=irf3805.pdf?ci_sign=b1f89a3f622ec38eb379399dfb2e700a67186d8d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
auf Bestellung 71 Stücke:
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IRF3805STRL-7PP IRF3805STRL-7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F628A62DE73F1A303005056AB0C4F&compId=irf3805s-7ppbf.pdf?ci_sign=c4df994e7b162fcc0e0cfd81692e30268d46ac41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3610STRLPBF IRF3610STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDBA92288AC143&compId=IRF3610STRLPBF.pdf?ci_sign=95fdba56d7c40ac1aecdbfbb4c03f02b5478e3e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
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TLE7258SJXUMA1 TLE7258SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AE5052B3AFC748&compId=TLE7258.pdf?ci_sign=fb47dd87523959ba8ff4c5c2ed4ff13300dd97c8 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
91+0.79 EUR
100+0.72 EUR
115+0.63 EUR
250+0.62 EUR
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IPB035N08N3GATMA1 IPB035N08N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB3C44E35211C&compId=IPB035N08N3G-DTE.pdf?ci_sign=21c5de3139bc2864bea66c1d6aed3968809828d3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
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BSC105N10LSFGATMA1 BSC105N10LSFGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D78CCFF2B411C&compId=BSC105N10LSFG-DTE.pdf?ci_sign=32f6b127d23e115ccf0cd1ecc059a3e7f4f9f4b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.5mΩ
Drain current: 90A
Gate-source voltage: ±20V
Power dissipation: 156W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRF40R207 IRF40R207 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDD1A753CD6143&compId=IRF40R207.pdf?ci_sign=4cd6fca78f66572d898b62deac93256e3bb94244 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
auf Bestellung 596 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
114+0.63 EUR
135+0.53 EUR
147+0.49 EUR
250+0.43 EUR
500+0.4 EUR
Mindestbestellmenge: 91
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IRF40B207 IRF40B207 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDC51618816143&compId=IRF40B207.pdf?ci_sign=12d3808b9e66cb40651b76a6f2b50069792efd39 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 67A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
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IRF40H233XTMA1 INFINEON TECHNOLOGIES Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF4104STRL AUIRF4104STRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D5255F1A6F5005056AB5A8F&compId=auirf4104.pdf?ci_sign=925a57986ee2188c36cc97181d621bea692e9156 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Technology: HEXFET®
Case: D2PAK
Kind of channel: enhancement
Kind of package: reel
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 10mΩ
Power dissipation: 140W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
Produkt ist nicht verfügbar
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S29AL016J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J55FFAR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S29AL016J55TFI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29AL016J55TFIR10 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J55TFIR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE1C27307C853D7&compId=BBY55_SER.pdf?ci_sign=d48aad07f34ac66a1ba9f25efc85af0438e4f4db Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Max. off-state voltage: 16V
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SC79
Leakage current: 0.1µA
Capacitance: 5.5...19.6pF
Features of semiconductor devices: RF
auf Bestellung 1979 Stücke:
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209+0.34 EUR
250+0.29 EUR
269+0.27 EUR
278+0.26 EUR
Mindestbestellmenge: 209
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BBY5303WE6327HTSA1 BBY5303WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5CB820&compId=Infineon-BBY53SERIES-DS-v01_01-en.pdf?ci_sign=6b6e73eb35b4bf47041f04ed442691af478f8ee1 Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Mounting: SMD
Max. off-state voltage: 6V
Load current: 20mA
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 1.85...5.8pF
Leakage current: 0.2µA
Case: SOD323
auf Bestellung 2948 Stücke:
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228+0.31 EUR
244+0.29 EUR
368+0.19 EUR
388+0.18 EUR
Mindestbestellmenge: 179
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ICL5101XUMA1 ICL5101XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDD56421C0ADE27&compId=ICL5101-DTE.pdf?ci_sign=ad687447ec2b258006ed4a814b7124edc5aab753 Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
Produkt ist nicht verfügbar
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TLE6232GPAUMA2 TLE6232GPAUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8942C4BC6A6143&compId=TLE6232GP.pdf?ci_sign=24e0445975d30b12ea03dfdacbe39036b23c1eb4 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Output current: 0.55...1.1A
Technology: FLEX
Number of channels: 6
Kind of output: N-Channel
Turn-on time: 10µs
Turn-off time: 10µs
Produkt ist nicht verfügbar
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TLE6251-2G TLE6251-2G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0BA68F3690A14&compId=TLE6251-2G.pdf?ci_sign=74c5e0fe904ed5d2f66a2c97797acfae64a2d9da Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
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IR2132STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
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IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC4C2806A011C&compId=IPP024N06N3G-DTE.pdf?ci_sign=50db48bc36890d6860fe3ae63f8a687849e4e47e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 26 Stücke:
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12+6.23 EUR
14+5.36 EUR
17+4.3 EUR
Mindestbestellmenge: 12
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IPI024N06N3GXKSA1 IPI024N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69966EB25DC411C&compId=IPI024N06N3G-DTE.pdf?ci_sign=af4669f0517a60affc571042607d4f14e1306ced Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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S29AL016J55TFNR10 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J55TFNR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J70BAI010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J70BAI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29AL016J70BFA010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S29AL016J70BFA013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S29AL016J70BFA023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S29AL016J70BFI012 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRS4427PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA864536E4D93D7&compId=IRS4427PBF.pdf?ci_sign=18bc1ab6bdaf203e717df27cfa52960c5ee10db1
IRS4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
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FZ600R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B429DD0D2FC469&compId=FZ600R12KE3.pdf?ci_sign=868834a23490657b7f01821c752b76da3c7c6933
FZ600R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Produkt ist nicht verfügbar
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FZ400R12KS4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABBD2E6ABB71060C7&compId=FZ400R12KS4.pdf?ci_sign=38ee09c54c6e231e906f63e53875a0cb78b3b52e
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Produkt ist nicht verfügbar
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FF450R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FF450R12KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF791B428A7DE27&compId=FF450R12KE4-DTE.pdf?ci_sign=ea990a008d4cd0a41ce5a30a9a09bff4050731f0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FZ900R12KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F18F860860D5&compId=FZ900R12KE4.pdf?ci_sign=23fa0b5b27e80ccd677c32a3a61818263e8ce358
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Produkt ist nicht verfügbar
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DF400R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDF8B8F122253D7&compId=DF400R12KE3.pdf?ci_sign=c0ee8fc01e207ac3de7635995e03cffedee02f43
DF400R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
Topology: buck chopper
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FD6BFDD0F906745&compId=FF200R12KE3.pdf?ci_sign=f153117c762ff8f8b62ebc993737473163b2a468
FF200R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT half-bridge
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+211.07 EUR
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TT260N22KOFHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE7AC9E2082469&compId=TT260N22KOF.pdf?ci_sign=28d540274c7a6cf55effab82fa3567854f9dd7f9
TT260N22KOFHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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FF200R12KT3EHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A398A572F53D7&compId=FF200R12KT3E.pdf?ci_sign=7d379c22644bc6b2701cdde2fb53b0018b9a5173
FF200R12KT3EHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT x2
Produkt ist nicht verfügbar
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FF300R12KT3EHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A6B34C2C213D7&compId=FF300R12KT3E.pdf?ci_sign=fd144bb2674acaa882bf1dd9f81d465f7011f7f3
FF300R12KT3EHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Topology: IGBT x2
Produkt ist nicht verfügbar
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FF200R12KE4PHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A348FD319B3D7&compId=FF200R12KE4P.pdf?ci_sign=c3b8d527485471d02faae9add4b3248119e8cbfe
FF200R12KE4PHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS724G pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBC9E5A998E90469&compId=BTS724G.pdf?ci_sign=fdbdc60cc29109e80227e1510eebe17cccc6aecd
BTS724G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Mounting: SMD
Number of channels: 4
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 22.5mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 992 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.24 EUR
13+5.81 EUR
15+5 EUR
25+4.13 EUR
50+3.88 EUR
Mindestbestellmenge: 10
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BCR141E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C592F4B4A0A469&compId=BCR141.pdf?ci_sign=6735c9f133de00805775cd3a1803dbbcf5242143
BCR141E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Mounting: SMD
Type of transistor: NPN
Kind of transistor: BRT
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
Frequency: 130MHz
auf Bestellung 4138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
246+0.29 EUR
401+0.18 EUR
474+0.15 EUR
688+0.1 EUR
788+0.091 EUR
1000+0.081 EUR
3000+0.068 EUR
Mindestbestellmenge: 179
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IRLTS6342TRPBF pVersion=0046&contRep=ZT&docId=E22282476BD4DAF1A303005056AB0C4F&compId=irlts6342pbf.pdf?ci_sign=e247a54c761d43482cdc3c03bb2b306196ea7d84
IRLTS6342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
293+0.24 EUR
332+0.22 EUR
368+0.19 EUR
404+0.18 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 218
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ITS4141NHUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6DF8054C3B5EA&compId=ITS4141N.pdf?ci_sign=e124ff2bc030b4d051faaf0434cbcb829927b7f4
ITS4141NHUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Operating temperature: -30...85°C
Case: SOT223
Supply voltage: 12...45V DC
Kind of package: reel; tape
On-state resistance: 0.2Ω
Technology: Industrial PROFET
Kind of output: N-Channel
Turn-off time: 0.1ms
Turn-on time: 150µs
Power dissipation: 1.4W
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
54+1.34 EUR
59+1.22 EUR
Mindestbestellmenge: 40
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BTS3405G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E076C4E98469&compId=BTS3405G.pdf?ci_sign=8f9574202640d62b6b0b3043218a9c425ff98c55
BTS3405G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Case: PG-DSO-8-25
On-state resistance: 0.35Ω
Output voltage: 10V
Technology: HITFET®
Kind of output: N-Channel
auf Bestellung 2207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
42+1.73 EUR
47+1.54 EUR
100+1.42 EUR
Mindestbestellmenge: 27
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BAT1704E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0
BAT1704E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Semiconductor structure: double series
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.13A
Power dissipation: 0.15W
Max. forward voltage: 0.6V
Max. off-state voltage: 4V
auf Bestellung 2679 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
511+0.14 EUR
556+0.13 EUR
618+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 417
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BSZ105N04NSGATMA1 BSZ105N04NSG.pdf
BSZ105N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
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BCR112E6327HTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
BCR112E6327HTSA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 1028 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
625+0.11 EUR
749+0.096 EUR
863+0.083 EUR
991+0.072 EUR
1028+0.07 EUR
Mindestbestellmenge: 455
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BCR148E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58B4B5D02A469&compId=BCR148.pdf?ci_sign=e97eb104b0c53699eb1c27d2f3eeba910076f276
BCR148E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Mounting: SMD
Type of transistor: NPN
Kind of transistor: BRT
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Frequency: 100MHz
auf Bestellung 2145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
792+0.09 EUR
878+0.082 EUR
993+0.072 EUR
1145+0.062 EUR
Mindestbestellmenge: 792
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IRFL024ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE3F07F0275EA&compId=IRFL024ZTRPBF.pdf?ci_sign=8c23d246f7a2ed4b15ce6df643c8a84d048dd9c2
IRFL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BTS50085-1TMA BTS50085-1TMA.pdf
BTS50085-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
auf Bestellung 447 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.76 EUR
11+7.05 EUR
25+6.49 EUR
50+6.25 EUR
Mindestbestellmenge: 10
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BAS4007WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4007WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Max. off-state voltage: 40V
Semiconductor structure: double independent
Type of diode: Schottky switching
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
248+0.29 EUR
291+0.25 EUR
521+0.14 EUR
750+0.095 EUR
1000+0.083 EUR
Mindestbestellmenge: 193
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IRLR3915TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF127303F0515EA&compId=IRLR3915TRPBF.pdf?ci_sign=2a546e3321d7785d96f1b8df8cb817a035b9b316
IRLR3915TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BA885E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999BC51ABD17E27&compId=BAx95-DTE.pdf?ci_sign=2fc9f1d8e133c7a4c3202608515580a89c97324a
BA885E6327
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1064+0.067 EUR
1087+0.066 EUR
Mindestbestellmenge: 1064
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BSC109N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D950ECCBD011C&compId=BSC109N10NS3G-DTE.pdf?ci_sign=73b03e08e383856ad99c6b662e0bfa1e3d0a5de9
BSC109N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.9mΩ
Drain current: 63A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS7005WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7005WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
432+0.17 EUR
625+0.11 EUR
834+0.086 EUR
1000+0.075 EUR
Mindestbestellmenge: 334
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IRF3805PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7ADAF1A6F5005056AB5A8F&compId=irf3805.pdf?ci_sign=b1f89a3f622ec38eb379399dfb2e700a67186d8d
IRF3805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
31+2.32 EUR
50+2.07 EUR
Mindestbestellmenge: 21
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IRF3805STRL-7PP pVersion=0046&contRep=ZT&docId=E21F628A62DE73F1A303005056AB0C4F&compId=irf3805s-7ppbf.pdf?ci_sign=c4df994e7b162fcc0e0cfd81692e30268d46ac41
IRF3805STRL-7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3610STRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDBA92288AC143&compId=IRF3610STRLPBF.pdf?ci_sign=95fdba56d7c40ac1aecdbfbb4c03f02b5478e3e1
IRF3610STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AE5052B3AFC748&compId=TLE7258.pdf?ci_sign=fb47dd87523959ba8ff4c5c2ed4ff13300dd97c8
TLE7258SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
91+0.79 EUR
100+0.72 EUR
115+0.63 EUR
250+0.62 EUR
Mindestbestellmenge: 76
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IPB035N08N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB3C44E35211C&compId=IPB035N08N3G-DTE.pdf?ci_sign=21c5de3139bc2864bea66c1d6aed3968809828d3
IPB035N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC105N10LSFGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D78CCFF2B411C&compId=BSC105N10LSFG-DTE.pdf?ci_sign=32f6b127d23e115ccf0cd1ecc059a3e7f4f9f4b8
BSC105N10LSFGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.5mΩ
Drain current: 90A
Gate-source voltage: ±20V
Power dissipation: 156W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF40R207 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDD1A753CD6143&compId=IRF40R207.pdf?ci_sign=4cd6fca78f66572d898b62deac93256e3bb94244
IRF40R207
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
auf Bestellung 596 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
114+0.63 EUR
135+0.53 EUR
147+0.49 EUR
250+0.43 EUR
500+0.4 EUR
Mindestbestellmenge: 91
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IRF40B207 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDC51618816143&compId=IRF40B207.pdf?ci_sign=12d3808b9e66cb40651b76a6f2b50069792efd39
IRF40B207
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 67A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IRF40H233XTMA1 Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4104STRL pVersion=0046&contRep=ZT&docId=E1C045883D5255F1A6F5005056AB5A8F&compId=auirf4104.pdf?ci_sign=925a57986ee2188c36cc97181d621bea692e9156
AUIRF4104STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Technology: HEXFET®
Case: D2PAK
Kind of channel: enhancement
Kind of package: reel
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 10mΩ
Power dissipation: 140W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55BFIR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55FFAR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFIR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J55TFIR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BBY5502VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE1C27307C853D7&compId=BBY55_SER.pdf?ci_sign=d48aad07f34ac66a1ba9f25efc85af0438e4f4db
BBY5502VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Max. off-state voltage: 16V
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SC79
Leakage current: 0.1µA
Capacitance: 5.5...19.6pF
Features of semiconductor devices: RF
auf Bestellung 1979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
250+0.29 EUR
269+0.27 EUR
278+0.26 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
BBY5303WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5CB820&compId=Infineon-BBY53SERIES-DS-v01_01-en.pdf?ci_sign=6b6e73eb35b4bf47041f04ed442691af478f8ee1
BBY5303WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Mounting: SMD
Max. off-state voltage: 6V
Load current: 20mA
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 1.85...5.8pF
Leakage current: 0.2µA
Case: SOD323
auf Bestellung 2948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
228+0.31 EUR
244+0.29 EUR
368+0.19 EUR
388+0.18 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
ICL5101XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDD56421C0ADE27&compId=ICL5101-DTE.pdf?ci_sign=ad687447ec2b258006ed4a814b7124edc5aab753
ICL5101XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE6232GPAUMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8942C4BC6A6143&compId=TLE6232GP.pdf?ci_sign=24e0445975d30b12ea03dfdacbe39036b23c1eb4
TLE6232GPAUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Output current: 0.55...1.1A
Technology: FLEX
Number of channels: 6
Kind of output: N-Channel
Turn-on time: 10µs
Turn-off time: 10µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE6251-2G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0BA68F3690A14&compId=TLE6251-2G.pdf?ci_sign=74c5e0fe904ed5d2f66a2c97797acfae64a2d9da
TLE6251-2G
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2132STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
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IPP024N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC4C2806A011C&compId=IPP024N06N3G-DTE.pdf?ci_sign=50db48bc36890d6860fe3ae63f8a687849e4e47e
IPP024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
14+5.36 EUR
17+4.3 EUR
Mindestbestellmenge: 12
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IPI024N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69966EB25DC411C&compId=IPI024N06N3G-DTE.pdf?ci_sign=af4669f0517a60affc571042607d4f14e1306ced
IPI024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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S29AL016J55TFNR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J55TFNR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J70BAI010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29AL016J70BAI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29AL016J70BFA010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFA023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI012 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL016J70BFI013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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