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1EDS5663HXUMA1 1EDS5663HXUMA1 INFINEON TECHNOLOGIES 1EDF5673F_1EDF5663H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
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IGOT60R070D1AUMA1 INFINEON TECHNOLOGIES IGOT60R070D1.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 IGT60R070D1ATMA1 INFINEON TECHNOLOGIES IGT60R070D1.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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IRFH7110TRPBF IRFH7110TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB9C6F703D5EA&compId=IRFH7110TRPBF.pdf?ci_sign=c66b2d50f8a627ad6e7e7a642b848a73f86c80c4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRFTS9342TRPBF IRFTS9342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C996E431F6F1A303005056AB0C4F&compId=irfts9342pbf.pdf?ci_sign=b172a9595ca6a4474e9b0d2efc95b751114ea742 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -5.8A
auf Bestellung 2637 Stücke:
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105+0.69 EUR
143+0.50 EUR
184+0.39 EUR
230+0.31 EUR
424+0.17 EUR
447+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 105
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IRFTS8342TRPBF IRFTS8342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C975B7ABC1F1A303005056AB0C4F&compId=irfts8342pbf.pdf?ci_sign=db0a5119cd5ea81bef66eb4bdb6eb86b3179e7bd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.2A
auf Bestellung 3442 Stücke:
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129+0.56 EUR
180+0.40 EUR
360+0.20 EUR
382+0.19 EUR
3000+0.18 EUR
Mindestbestellmenge: 129
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 INFINEON TECHNOLOGIES IPB015N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB015N04LGATMA1 IPB015N04LGATMA1 INFINEON TECHNOLOGIES IPB015N04LG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 260nC
Produkt ist nicht verfügbar
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IPB017N06N3GATMA1 IPB017N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D047724C211C&compId=IPB017N06N3G-DTE.pdf?ci_sign=208230effbcefd907be045691ad144c03c166baf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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2EDS8165HXUMA1 2EDS8165HXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
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IPI80N06S407AKSA2 IPI80N06S407AKSA2 INFINEON TECHNOLOGIES IPI80N06S407AKSA2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Technology: OptiMOS® -T2
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.65 EUR
30+2.39 EUR
36+2.03 EUR
38+1.92 EUR
50+1.90 EUR
250+1.84 EUR
Mindestbestellmenge: 28
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IPB180N06S4H1ATMA2 INFINEON TECHNOLOGIES Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
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IRLTS2242TRPBF IRLTS2242TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222822B4201F0F1A303005056AB0C4F&compId=irlts2242pbf.pdf?ci_sign=67037f13a19603e6ce309fb4330f48931a8be6de Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -20V
Drain current: -6.9A
auf Bestellung 3136 Stücke:
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139+0.51 EUR
175+0.41 EUR
252+0.28 EUR
300+0.24 EUR
486+0.15 EUR
511+0.14 EUR
3000+0.13 EUR
Mindestbestellmenge: 139
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BCP55H6327XTSA1 BCP55H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B74C701E2469&compId=BCP55H6327XTSA1.pdf?ci_sign=08291b14ff29a8fbd77d5ad5acff855eac2f8138 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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FF300R12KT4HOSA1 FF300R12KT4HOSA1 INFINEON TECHNOLOGIES FF300R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Produkt ist nicht verfügbar
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IRF6644TRPBF IRF6644TRPBF INFINEON TECHNOLOGIES irf6644pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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IR2010PBF IR2010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.50 EUR
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XMC4108F64K64ABXQMA1 XMC4108F64K64ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
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XMC4500F100K768ACXQMA1 XMC4500F100K768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
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XMC4502F100K768ACXQMA1 XMC4502F100K768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
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XMC4700F144F1536AAXQMA1 XMC4700F144F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
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IRS21844STRPBF INFINEON TECHNOLOGIES irs2184.pdf?fileId=5546d462533600a401535676d8da27db Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
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BCX55H6327XTSA1 BCX55H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C523F7A9BD2469&compId=BCX55.pdf?ci_sign=a3bb4ae1588b66242c2cb0348fbd0c37989e1df4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 38 Stücke:
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38+1.89 EUR
Mindestbestellmenge: 38
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IPA60R380P6XKSA1 IPA60R380P6XKSA1 INFINEON TECHNOLOGIES IPA60R380P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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XC822MT1FRIAAFXUMA1 XC822MT1FRIAAFXUMA1 INFINEON TECHNOLOGIES XC82X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
52+1.40 EUR
69+1.04 EUR
73+0.99 EUR
Mindestbestellmenge: 49
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IRFH5110TRPBF IRFH5110TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B5CDDD6CADF1A303005056AB0C4F&compId=irfh5110pbf.pdf?ci_sign=b0431d386322e9a787eacbded2ffc698b5b0504f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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TLE42764GVATMA1 TLE42764GVATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Operating temperature: -40...150°C
Output voltage: 2.5...20V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.97 EUR
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TLE4268GXUMA2 TLE4268GXUMA2 INFINEON TECHNOLOGIES TLE4268G.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
auf Bestellung 344 Stücke:
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40+1.80 EUR
44+1.63 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 40
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TLE42764GV50ATMA1 TLE42764GV50ATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
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TLE42764DVATMA1 TLE42764DVATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Operating temperature: -40...150°C
Output voltage: 2.5...20V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...40V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-TO252-5
Tolerance: ±2%
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TLE42764DV50ATMA1 TLE42764DV50ATMA1 INFINEON TECHNOLOGIES TLE42764.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-TO252-5
Tolerance: ±2%
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IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
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IPG20N10S4L35ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Drain-source voltage: 100V
Drain current: 17A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 43W
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TDSON-8-4
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IPP60R099P6XKSA1 IPP60R099P6XKSA1 INFINEON TECHNOLOGIES IPP60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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AUIR3241STR AUIR3241STR INFINEON TECHNOLOGIES AUIR3241STR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Supply voltage: 3...36V DC
Power: 625mW
Operating temperature: -40...125°C
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IRLHS6276TRPBF IRLHS6276TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22277C3379CC2F1A303005056AB0C4F&compId=irlhs6276pbf.pdf?ci_sign=208aca56a5000cd5159155d6e3fbbc58f9c0642b Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
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ITS4142N ITS4142N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6E1AB61DB55EA&compId=ITS4142N.pdf?ci_sign=21c702092ba3ee18972d7cdcbb85086b44fd23a3 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 12...45V DC
Case: SOT223
On-state resistance: 0.2Ω
Turn-on time: 150µs
Turn-off time: 0.1ms
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.4W
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -30...85°C
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SMBTA92E6327HTSA1 SMBTA92E6327HTSA1 INFINEON TECHNOLOGIES SMBTA92E6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
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IRF7451PBF IRF7451PBF INFINEON TECHNOLOGIES irf7451pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
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IRF7451TRPBF IRF7451TRPBF INFINEON TECHNOLOGIES irf7451pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
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IRF250P224 IRF250P224 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5D7D7C8750A18&compId=IRF250P224.pdf?ci_sign=b596cfd627d254660d4e86550909ac67ff33c44d Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Case: TO247AC
Kind of package: tube
Mounting: THT
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Drain-source voltage: 250V
Gate-source voltage: ±20V
Drain current: 68A
On-state resistance: 12mΩ
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BCR401WH6327XTSA1
+1
 		BCR401WH6327XTSA1 INFINEON TECHNOLOGIES BCR401W.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming
Operating voltage: 1.2...18V DC
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Output current: 10...60mA
Case: SOT343
Type of integrated circuit: driver
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IPP60R190P6XKSA1 IPP60R190P6XKSA1 INFINEON TECHNOLOGIES IPP60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Gate-source voltage: ±20V
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P6
Kind of channel: enhancement
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IPP60R199CPXKSA1 IPP60R199CPXKSA1 INFINEON TECHNOLOGIES IPP60R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R120P7 IPA60R120P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E184A487B3A749&compId=IPA60R120P7.pdf?ci_sign=2a32c7f9e43909d9c30658870980b04c399f73e2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP023N10N5AKSA1 IPP023N10N5AKSA1 INFINEON TECHNOLOGIES IPP023N10N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BCX42E6327 BCX42E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B4125EE4672469&compId=BCX42E6327.pdf?ci_sign=67fb8351dd49719a9bb2a0e2e784490f512ddf69 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
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BCR505E6327 BCR505E6327 INFINEON TECHNOLOGIES BCR505.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.33W
Frequency: 100MHz
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BCR503E6327HTSA1 BCR503E6327HTSA1 INFINEON TECHNOLOGIES BCR503.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Power dissipation: 0.33W
Frequency: 100MHz
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ICE1HS01G1XUMA1 ICE1HS01G1XUMA1 INFINEON TECHNOLOGIES ICE1HS01G-1.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Operating voltage: 10.2...18V DC
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: for LCD displays; SMPS
Frequency: 50...609kHz
Kind of integrated circuit: resonant mode controller
Topology: push-pull
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BTS5012SDA BTS5012SDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986584F5DB6469&compId=BTS5012SDA.pdf?ci_sign=4c533c0b61246aa343a29fc2c537766b23bce121 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
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FD300R12KE3HOSA1 FD300R12KE3HOSA1 INFINEON TECHNOLOGIES FD300R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Application: Inverter
Power dissipation: 1.47kW
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IPA60R180P7SXKSA1 IPA60R180P7SXKSA1 INFINEON TECHNOLOGIES IPA60R180P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
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IPW60R190C6FKSA1 IPW60R190C6FKSA1 INFINEON TECHNOLOGIES IPW60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSB013NE2LXIXUMA1 BSB013NE2LXIXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C1FC2A5FA9011C&compId=BSB013NE2LXI-DTE.pdf?ci_sign=aba356e0bd6bc82ad911453ce9c6ebac3f41cad2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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S25FL064LABMFB013 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 108MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
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S25FL128LAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
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S25FL128SAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
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S25FL256SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Mounting: SMD
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S25FL512SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
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1EDS5663HXUMA1 1EDF5673F_1EDF5663H.pdf
1EDS5663HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
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IGOT60R070D1AUMA1 IGOT60R070D1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGT60R070D1ATMA1 IGT60R070D1.pdf
IGT60R070D1ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7110TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB9C6F703D5EA&compId=IRFH7110TRPBF.pdf?ci_sign=c66b2d50f8a627ad6e7e7a642b848a73f86c80c4
IRFH7110TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFTS9342TRPBF pVersion=0046&contRep=ZT&docId=E221C996E431F6F1A303005056AB0C4F&compId=irfts9342pbf.pdf?ci_sign=b172a9595ca6a4474e9b0d2efc95b751114ea742
IRFTS9342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -5.8A
auf Bestellung 2637 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
143+0.50 EUR
184+0.39 EUR
230+0.31 EUR
424+0.17 EUR
447+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
IRFTS8342TRPBF pVersion=0046&contRep=ZT&docId=E221C975B7ABC1F1A303005056AB0C4F&compId=irfts8342pbf.pdf?ci_sign=db0a5119cd5ea81bef66eb4bdb6eb86b3179e7bd
IRFTS8342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.2A
auf Bestellung 3442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
180+0.40 EUR
360+0.20 EUR
382+0.19 EUR
3000+0.18 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
IPB015N08N5ATMA1 IPB015N08N5-DTE.pdf
IPB015N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB015N04LGATMA1 IPB015N04LG.pdf
IPB015N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 260nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D047724C211C&compId=IPB017N06N3G-DTE.pdf?ci_sign=208230effbcefd907be045691ad144c03c166baf
IPB017N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDS8165HXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974
2EDS8165HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N06S407AKSA2 IPI80N06S407AKSA2.pdf
IPI80N06S407AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Technology: OptiMOS® -T2
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
30+2.39 EUR
36+2.03 EUR
38+1.92 EUR
50+1.90 EUR
250+1.84 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLTS2242TRPBF pVersion=0046&contRep=ZT&docId=E222822B4201F0F1A303005056AB0C4F&compId=irlts2242pbf.pdf?ci_sign=67037f13a19603e6ce309fb4330f48931a8be6de
IRLTS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -20V
Drain current: -6.9A
auf Bestellung 3136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
175+0.41 EUR
252+0.28 EUR
300+0.24 EUR
486+0.15 EUR
511+0.14 EUR
3000+0.13 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
BCP55H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B74C701E2469&compId=BCP55H6327XTSA1.pdf?ci_sign=08291b14ff29a8fbd77d5ad5acff855eac2f8138
BCP55H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF300R12KT4HOSA1 FF300R12KT4.pdf
FF300R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6644TRPBF irf6644pbf.pdf
IRF6644TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2010PBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
IR2010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
XMC4108F64K64ABXQMA1 XMC4100-4200-DTE.pdf
XMC4108F64K64ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Operating temperature: -40...125°C
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4500F100K768ACXQMA1 XMC4500-DTE.pdf
XMC4500F100K768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4502F100K768ACXQMA1 XMC4500-DTE.pdf
XMC4502F100K768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4700F144F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4700F144F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 276kBSRAM,1536kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Memory: 276kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Produkt ist nicht verfügbar
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IRS21844STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX55H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C523F7A9BD2469&compId=BCX55.pdf?ci_sign=a3bb4ae1588b66242c2cb0348fbd0c37989e1df4
BCX55H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R380P6XKSA1 IPA60R380P6-DTE.pdf
IPA60R380P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC822MT1FRIAAFXUMA1 XC82X-DTE.pdf
XC822MT1FRIAAFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
52+1.40 EUR
69+1.04 EUR
73+0.99 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5110TRPBF pVersion=0046&contRep=ZT&docId=E221B5CDDD6CADF1A303005056AB0C4F&compId=irfh5110pbf.pdf?ci_sign=b0431d386322e9a787eacbded2ffc698b5b0504f
IRFH5110TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE42764GVATMA1 TLE42764.pdf
TLE42764GVATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Operating temperature: -40...150°C
Output voltage: 2.5...20V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.97 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
TLE4268GXUMA2 TLE4268G.pdf
TLE4268GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.80 EUR
44+1.63 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
TLE42764GV50ATMA1 TLE42764.pdf
TLE42764GV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-TO263-5
Tolerance: ±2%
Produkt ist nicht verfügbar
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TLE42764DVATMA1 TLE42764.pdf
TLE42764DVATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷20V; 0.4A; SMD
Operating temperature: -40...150°C
Output voltage: 2.5...20V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...40V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Case: PG-TO252-5
Tolerance: ±2%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE42764DV50ATMA1 TLE42764.pdf
TLE42764DV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO252-5; SMD
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 4.5...41V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-TO252-5
Tolerance: ±2%
Produkt ist nicht verfügbar
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IPA60R360P7SXKSA1 Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7
IPA60R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
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IPG20N10S4L35ATMA1 Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Drain-source voltage: 100V
Drain current: 17A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 43W
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TDSON-8-4
Produkt ist nicht verfügbar
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IPP60R099P6XKSA1 IPP60R099P6-DTE.pdf
IPP60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIR3241STR AUIR3241STR.pdf
AUIR3241STR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Supply voltage: 3...36V DC
Power: 625mW
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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IRLHS6276TRPBF pVersion=0046&contRep=ZT&docId=E22277C3379CC2F1A303005056AB0C4F&compId=irlhs6276pbf.pdf?ci_sign=208aca56a5000cd5159155d6e3fbbc58f9c0642b
IRLHS6276TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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ITS4142N pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6E1AB61DB55EA&compId=ITS4142N.pdf?ci_sign=21c702092ba3ee18972d7cdcbb85086b44fd23a3
ITS4142N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 12...45V DC
Case: SOT223
On-state resistance: 0.2Ω
Turn-on time: 150µs
Turn-off time: 0.1ms
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.4W
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -30...85°C
auf Bestellung 3314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.68 EUR
30+2.40 EUR
48+1.50 EUR
51+1.42 EUR
1000+1.40 EUR
2000+1.36 EUR
Mindestbestellmenge: 20
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SMBTA92E6327HTSA1 SMBTA92E6327.pdf
SMBTA92E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
219+0.33 EUR
365+0.20 EUR
863+0.08 EUR
910+0.08 EUR
Mindestbestellmenge: 179
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IRF7451PBF irf7451pbf.pdf
IRF7451PBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
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IRF7451TRPBF irf7451pbf.pdf
IRF7451TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Drain-source voltage: 150V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
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IRF250P224 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5D7D7C8750A18&compId=IRF250P224.pdf?ci_sign=b596cfd627d254660d4e86550909ac67ff33c44d
IRF250P224
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Case: TO247AC
Kind of package: tube
Mounting: THT
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Drain-source voltage: 250V
Gate-source voltage: ±20V
Drain current: 68A
On-state resistance: 12mΩ
Produkt ist nicht verfügbar
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BCR401WH6327XTSA1 BCR401W.pdf
BCR401WH6327XTSA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming
Operating voltage: 1.2...18V DC
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Output current: 10...60mA
Case: SOT343
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IPP60R190P6XKSA1 IPP60R190P6-DTE.pdf
IPP60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Gate-source voltage: ±20V
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P6
Kind of channel: enhancement
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
33+2.20 EUR
35+2.09 EUR
Mindestbestellmenge: 23
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IPP60R199CPXKSA1 IPP60R199CP-DTE.pdf
IPP60R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
23+3.19 EUR
24+3.00 EUR
Mindestbestellmenge: 16
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IPA60R120P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E184A487B3A749&compId=IPA60R120P7.pdf?ci_sign=2a32c7f9e43909d9c30658870980b04c399f73e2
IPA60R120P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP023N10N5AKSA1 IPP023N10N5-DTE.pdf
IPP023N10N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCX42E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B4125EE4672469&compId=BCX42E6327.pdf?ci_sign=67fb8351dd49719a9bb2a0e2e784490f512ddf69
BCX42E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
auf Bestellung 1713 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.30 EUR
302+0.24 EUR
391+0.18 EUR
439+0.16 EUR
633+0.11 EUR
Mindestbestellmenge: 239
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BCR505E6327 BCR505.pdf
BCR505E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.33W
Frequency: 100MHz
auf Bestellung 3048 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
439+0.16 EUR
671+0.11 EUR
971+0.07 EUR
1027+0.07 EUR
3000+0.07 EUR
Mindestbestellmenge: 313
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BCR503E6327HTSA1 BCR503.pdf
BCR503E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Power dissipation: 0.33W
Frequency: 100MHz
auf Bestellung 7608 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+0.48 EUR
233+0.31 EUR
321+0.22 EUR
391+0.18 EUR
459+0.16 EUR
878+0.08 EUR
944+0.08 EUR
Mindestbestellmenge: 150
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ICE1HS01G1XUMA1 ICE1HS01G-1.pdf
ICE1HS01G1XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Operating voltage: 10.2...18V DC
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: for LCD displays; SMPS
Frequency: 50...609kHz
Kind of integrated circuit: resonant mode controller
Topology: push-pull
Produkt ist nicht verfügbar
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BTS5012SDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986584F5DB6469&compId=BTS5012SDA.pdf?ci_sign=4c533c0b61246aa343a29fc2c537766b23bce121
BTS5012SDA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
auf Bestellung 1017 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.33 EUR
29+2.49 EUR
31+2.37 EUR
32+2.29 EUR
100+2.27 EUR
Mindestbestellmenge: 22
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FD300R12KE3HOSA1 FD300R12KE3.pdf
FD300R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Application: Inverter
Power dissipation: 1.47kW
Produkt ist nicht verfügbar
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IPA60R180P7SXKSA1 IPA60R180P7S.pdf
IPA60R180P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
40+1.80 EUR
47+1.54 EUR
49+1.47 EUR
100+1.43 EUR
Mindestbestellmenge: 35
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IPW60R190C6FKSA1 IPW60R190C6-DTE.pdf
IPW60R190C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
20+3.59 EUR
24+3.10 EUR
25+2.93 EUR
120+2.89 EUR
Mindestbestellmenge: 18
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BSB013NE2LXIXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C1FC2A5FA9011C&compId=BSB013NE2LXI-DTE.pdf?ci_sign=aba356e0bd6bc82ad911453ce9c6ebac3f41cad2
BSB013NE2LXIXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL064LABMFB013 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 108MHz
Kind of interface: serial
Memory: 64Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL128LAGMFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL128SAGMFB013 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL256SAGMFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S25FL512SAGMFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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