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IAUZ40N10S5N130ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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PVT412LSPBF PVT412LSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D189AB1E21EC&compId=pvt412.pdf?ci_sign=8a606da7add791abdac6d3bf1a684622fceaac0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 243 Stücke:
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12+6.48 EUR
15+5 EUR
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IDWD40G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
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IR2132SPBF IR2132SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
auf Bestellung 25 Stücke:
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10+7.38 EUR
13+5.91 EUR
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IPB64N25S320ATMA1 INFINEON TECHNOLOGIES infineon-ipb64n25s3-20-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Pulsed drain current: 256A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: OptiMOS® -T
Case: PG-TO263-3-2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 20mΩ
Drain current: 46A
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IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES irlr9343pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IR2136SPBF IR2136SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 380ns
Turn-on time: 0.4µs
Power: 1.6W
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.19 EUR
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IR2136STRPBF IR2136STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
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2N7002H6327XTSA2 2N7002H6327XTSA2 INFINEON TECHNOLOGIES 2N7002H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5757 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
610+0.12 EUR
676+0.11 EUR
916+0.078 EUR
1053+0.068 EUR
1421+0.05 EUR
1467+0.049 EUR
Mindestbestellmenge: 500
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AUIRGP35B60PD AUIRGP35B60PD INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC7325BAA9773D7&compId=AUIRGP35B60PD.pdf?ci_sign=a814561838fdc4c27889b131942746e92013c0b3 Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
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IRF1405PBF IRF1405PBF INFINEON TECHNOLOGIES irf1405.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 170nC
On-state resistance: 5.3mΩ
auf Bestellung 964 Stücke:
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34+2.13 EUR
40+1.83 EUR
50+1.46 EUR
65+1.12 EUR
100+0.9 EUR
500+0.86 EUR
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IRF1405STRLPBF IRF1405STRLPBF INFINEON TECHNOLOGIES irf1405spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF1405ZPBF IRF1405ZPBF INFINEON TECHNOLOGIES irf1405zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 261 Stücke:
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28+2.65 EUR
46+1.56 EUR
50+1.52 EUR
100+1.44 EUR
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IRS44273LTRPBF IRS44273LTRPBF INFINEON TECHNOLOGIES IRS44273LTRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
Topology: single transistor
auf Bestellung 1433 Stücke:
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87+0.83 EUR
105+0.69 EUR
115+0.63 EUR
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IRS21064PBF IRS21064PBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 320ns
Power: 1.6W
auf Bestellung 51 Stücke:
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17+4.26 EUR
20+3.62 EUR
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IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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IRF7456TRPBF IRF7456TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A3B5252434F1A303005056AB0C4F&compId=irf7456pbf.pdf?ci_sign=20eed7c0bcf4bf49fd28c8d398cd07cb3486fafc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB4115PBF IRFB4115PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF92803E4748AD20D6&compId=IRFB4115.pdf?ci_sign=a357cd38840e146aca5baa544c6a049cd1055155 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 454 Stücke:
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23+3.12 EUR
28+2.63 EUR
29+2.55 EUR
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BCV47E6327 BCV47E6327 INFINEON TECHNOLOGIES BCV27E6327.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 3622 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
376+0.19 EUR
583+0.12 EUR
770+0.093 EUR
1000+0.084 EUR
3000+0.073 EUR
Mindestbestellmenge: 278
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SPW47N60C3 SPW47N60C3 INFINEON TECHNOLOGIES SPW47N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 179 Stücke:
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6+12.84 EUR
10+12.4 EUR
30+11.81 EUR
120+10.61 EUR
Mindestbestellmenge: 6
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SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 INFINEON TECHNOLOGIES SPW47N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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TLE7259-3GE TLE7259-3GE INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0E450A8D76A14&compId=TLE7259-3.pdf?ci_sign=938ffa7d89771037b59075fcaeb1333d803a8dcf Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 5mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...27V DC
Interface: LIN
auf Bestellung 2381 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
61+1.17 EUR
70+1.03 EUR
100+0.94 EUR
500+0.87 EUR
Mindestbestellmenge: 55
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IRFR024NTRPBF IRFR024NTRPBF INFINEON TECHNOLOGIES irfr024npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 8326 Stücke:
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173+0.41 EUR
183+0.39 EUR
191+0.38 EUR
199+0.36 EUR
250+0.34 EUR
Mindestbestellmenge: 173
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IR2118SPBF IR2118SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: SO8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
auf Bestellung 41 Stücke:
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41+1.74 EUR
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IR2301SPBF IR2301SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.06 EUR
46+1.57 EUR
51+1.42 EUR
54+1.33 EUR
95+1.26 EUR
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IR2304SPBF IR2304SPBF INFINEON TECHNOLOGIES ir2304.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
46+1.57 EUR
52+1.4 EUR
57+1.26 EUR
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IR2308SPBF IR2308SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
Produkt ist nicht verfügbar
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IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.86 EUR
Mindestbestellmenge: 5
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ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 INFINEON TECHNOLOGIES ICE2PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
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ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 INFINEON TECHNOLOGIES INFNS16600-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2360 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
69+1.04 EUR
74+0.97 EUR
82+0.87 EUR
85+0.84 EUR
Mindestbestellmenge: 61
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IRFB7437PBF IRFB7437PBF INFINEON TECHNOLOGIES IRFB7437PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 150nC
Trade name: StrongIRFET
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.12 EUR
64+1.12 EUR
74+0.98 EUR
100+0.92 EUR
250+0.84 EUR
500+0.79 EUR
Mindestbestellmenge: 34
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IR21834SPBF IR21834SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
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IHW30N120R5XKSA1 IHW30N120R5XKSA1 INFINEON TECHNOLOGIES IHW30N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
25+2.86 EUR
30+2.57 EUR
120+2.49 EUR
Mindestbestellmenge: 18
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IAUC60N06S5L073ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 168A
Technology: OptiMOS™ 5
Gate charge: 22.6nC
On-state resistance: 9.8mΩ
Power dissipation: 52W
Produkt ist nicht verfügbar
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IAUC60N06S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 168A
Technology: OptiMOS™ 5
Gate charge: 20nC
On-state resistance: 9mΩ
Power dissipation: 52W
Produkt ist nicht verfügbar
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IPA060N06NM5SXKSA1 IPA060N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA060N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cebbb676e20 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 224A
Technology: OptiMOS™ 3
On-state resistance: 6mΩ
Power dissipation: 33W
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
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IPA060N06NXKSA1 IPA060N06NXKSA1 INFINEON TECHNOLOGIES IPA060N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™
On-state resistance: 6mΩ
Power dissipation: 33W
Produkt ist nicht verfügbar
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IRF9Z24NPBF IRF9Z24NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B672F1A6F5005056AB5A8F&compId=irf9z24n.pdf?ci_sign=86417c6f7b297148bbf68c7249788f86ad2c878e Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 12.7nC
Power dissipation: 45W
auf Bestellung 846 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
139+0.52 EUR
150+0.48 EUR
250+0.43 EUR
500+0.39 EUR
Mindestbestellmenge: 120
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IRF9Z24NSTRLPBF INFINEON TECHNOLOGIES Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BAT6404E6327HTSA1 BAT6404E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 7084 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
758+0.094 EUR
794+0.09 EUR
1005+0.071 EUR
1112+0.064 EUR
1200+0.06 EUR
1263+0.057 EUR
Mindestbestellmenge: 625
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IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1194 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
136+0.53 EUR
145+0.49 EUR
154+0.47 EUR
163+0.44 EUR
500+0.38 EUR
1000+0.36 EUR
Mindestbestellmenge: 120
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IRLR3410TRRPBF IRLR3410TRRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BSS127H6327XTSA2 BSS127H6327XTSA2 INFINEON TECHNOLOGIES BSS127H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 500Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 3336 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
230+0.31 EUR
281+0.25 EUR
332+0.22 EUR
391+0.18 EUR
562+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 167
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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES BAR64xx_Ser.pdf Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
334+0.21 EUR
556+0.13 EUR
685+0.1 EUR
Mindestbestellmenge: 209
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IHW20N120R5XKSA1 IHW20N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9BE52A653EB120D3&compId=IHW20N120R5.pdf?ci_sign=9078d3fe050273e18820feb3c35340de2d9578db Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 440ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.16 EUR
23+3.1 EUR
Mindestbestellmenge: 18
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IRF7317TRPBF IRF7317TRPBF INFINEON TECHNOLOGIES irf7317pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Case: SO8
Mounting: SMD
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
On-state resistance: 29/58mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRS2110SPBF IRS2110SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920764F1A6F5005056AB5A8F&compId=irs2110.pdf?ci_sign=d7e6b7c7a85603dbb88ebe28cd2f0be131bac1f8 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Case: SO16
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Turn-off time: 137ns
Turn-on time: 155ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 500V
Kind of package: tube
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
20+3.72 EUR
Mindestbestellmenge: 17
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IRS2118PBF IRS2118PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Case: DIP8
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: THT
Kind of package: tube
Output current: -600...290mA
Turn-off time: 140ns
Turn-on time: 0.2µs
Power: 1W
Number of channels: 1
Produkt ist nicht verfügbar
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IRS2118SPBF IRS2118SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Case: SO8
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Kind of package: tube
Output current: -600...290mA
Turn-off time: 140ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Produkt ist nicht verfügbar
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BCR116SH6327 BCR116SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
auf Bestellung 719 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
642+0.11 EUR
719+0.1 EUR
Mindestbestellmenge: 455
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BAS16UE6327HTSA1 BAS16UE6327HTSA1 INFINEON TECHNOLOGIES BAS16SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4430 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
455+0.16 EUR
491+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 417
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BAV70UE6327HTSA1 BAV70UE6327HTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 5659 Stücke:
Lieferzeit 14-21 Tag (e)
2977+0.024 EUR
Mindestbestellmenge: 2977
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BAV99UE6327HTSA1 BAV99UE6327HTSA1 INFINEON TECHNOLOGIES BAV99SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2749 Stücke:
Lieferzeit 14-21 Tag (e)
481+0.15 EUR
596+0.12 EUR
676+0.11 EUR
Mindestbestellmenge: 481
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BAS4004E6327HTSA1 BAS4004E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Load current: 0.12A
Max. forward impulse current: 0.2A
Case: SOT23
Semiconductor structure: double series
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.25W
Max. forward voltage: 1V
auf Bestellung 6235 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
532+0.13 EUR
676+0.11 EUR
1247+0.057 EUR
3000+0.054 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BAS4005E6327HTSA1 BAS4005E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
417+0.17 EUR
455+0.16 EUR
575+0.12 EUR
648+0.11 EUR
776+0.092 EUR
908+0.079 EUR
1092+0.065 EUR
Mindestbestellmenge: 334
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BAS4007E6327HTSA1 BAS4007E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 40V
Semiconductor structure: double independent
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
365+0.2 EUR
459+0.16 EUR
511+0.14 EUR
633+0.11 EUR
Mindestbestellmenge: 239
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BAT1503WE6327HTSA1 BAT1503WE6327HTSA1 INFINEON TECHNOLOGIES BAT1503WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Max. off-state voltage: 4V
Load current: 0.11A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Power dissipation: 0.1W
auf Bestellung 3530 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
146+0.49 EUR
167+0.43 EUR
193+0.37 EUR
202+0.35 EUR
231+0.31 EUR
500+0.23 EUR
Mindestbestellmenge: 107
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SMBTA42E6327HTSA1 SMBTA42E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD738071820F5EA&compId=SMBTA42.pdf?ci_sign=9899fa88d5c056e78cf168f4e052d2705dc28676 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 3078 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
281+0.25 EUR
428+0.17 EUR
517+0.14 EUR
758+0.094 EUR
1000+0.083 EUR
3000+0.073 EUR
Mindestbestellmenge: 209
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BC856UE6327 BC856UE6327 INFINEON TECHNOLOGIES BC856UE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)
410+0.17 EUR
521+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 410
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BFR106E6327 BFR106E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C71BCCE2211C&compId=BFR106E6327-dte.pdf?ci_sign=41a49cfb5261526e3a9fbc63bc4a5f9d07c0e4e0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 16V
Collector current: 0.21A
Power dissipation: 0.7W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 1593 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
256+0.28 EUR
334+0.21 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 200
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IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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PVT412LSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D189AB1E21EC&compId=pvt412.pdf?ci_sign=8a606da7add791abdac6d3bf1a684622fceaac0c
PVT412LSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.48 EUR
15+5 EUR
Mindestbestellmenge: 12
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IDWD40G120C5XKSA1 Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
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IR2132SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4
IR2132SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.38 EUR
13+5.91 EUR
Mindestbestellmenge: 10
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IPB64N25S320ATMA1 infineon-ipb64n25s3-20-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Pulsed drain current: 256A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: OptiMOS® -T
Case: PG-TO263-3-2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 20mΩ
Drain current: 46A
Produkt ist nicht verfügbar
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IRLR9343TRPBF irlr9343pbf.pdf
IRLR9343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IR2136SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97
IR2136SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 380ns
Turn-on time: 0.4µs
Power: 1.6W
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.19 EUR
Mindestbestellmenge: 10
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IR2136STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97
IR2136STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Produkt ist nicht verfügbar
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2N7002H6327XTSA2 2N7002H6327XTSA2.pdf
2N7002H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5757 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
610+0.12 EUR
676+0.11 EUR
916+0.078 EUR
1053+0.068 EUR
1421+0.05 EUR
1467+0.049 EUR
Mindestbestellmenge: 500
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AUIRGP35B60PD pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC7325BAA9773D7&compId=AUIRGP35B60PD.pdf?ci_sign=a814561838fdc4c27889b131942746e92013c0b3
AUIRGP35B60PD
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Produkt ist nicht verfügbar
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IRF1405PBF irf1405.pdf
IRF1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 170nC
On-state resistance: 5.3mΩ
auf Bestellung 964 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
40+1.83 EUR
50+1.46 EUR
65+1.12 EUR
100+0.9 EUR
500+0.86 EUR
Mindestbestellmenge: 34
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IRF1405STRLPBF irf1405spbf.pdf
IRF1405STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1405ZPBF irf1405zpbf.pdf
IRF1405ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
46+1.56 EUR
50+1.52 EUR
100+1.44 EUR
Mindestbestellmenge: 28
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IRS44273LTRPBF IRS44273LTRPBF.pdf
IRS44273LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
Topology: single transistor
auf Bestellung 1433 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
105+0.69 EUR
115+0.63 EUR
Mindestbestellmenge: 87
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IRS21064PBF irs2106.pdf
IRS21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 320ns
Power: 1.6W
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
20+3.62 EUR
Mindestbestellmenge: 17
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IRS2106SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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IRF7456TRPBF pVersion=0046&contRep=ZT&docId=E221A3B5252434F1A303005056AB0C4F&compId=irf7456pbf.pdf?ci_sign=20eed7c0bcf4bf49fd28c8d398cd07cb3486fafc
IRF7456TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB4115PBF pVersion=0046&contRep=ZT&docId=005056AB281E1EDF92803E4748AD20D6&compId=IRFB4115.pdf?ci_sign=a357cd38840e146aca5baa544c6a049cd1055155
IRFB4115PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
28+2.63 EUR
29+2.55 EUR
Mindestbestellmenge: 23
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BCV47E6327 BCV27E6327.pdf
BCV47E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 3622 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
376+0.19 EUR
583+0.12 EUR
770+0.093 EUR
1000+0.084 EUR
3000+0.073 EUR
Mindestbestellmenge: 278
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SPW47N60C3 SPW47N60C3.pdf
SPW47N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.84 EUR
10+12.4 EUR
30+11.81 EUR
120+10.61 EUR
Mindestbestellmenge: 6
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SPW47N60CFDFKSA1 SPW47N60CFD.pdf
SPW47N60CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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TLE7259-3GE pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0E450A8D76A14&compId=TLE7259-3.pdf?ci_sign=938ffa7d89771037b59075fcaeb1333d803a8dcf
TLE7259-3GE
Hersteller: INFINEON TECHNOLOGIES
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 5mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...27V DC
Interface: LIN
auf Bestellung 2381 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
61+1.17 EUR
70+1.03 EUR
100+0.94 EUR
500+0.87 EUR
Mindestbestellmenge: 55
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IRFR024NTRPBF description irfr024npbf.pdf
IRFR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 8326 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
183+0.39 EUR
191+0.38 EUR
199+0.36 EUR
250+0.34 EUR
Mindestbestellmenge: 173
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IR2118SPBF description ir2117.pdf
IR2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: SO8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IR2301SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c
IR2301SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Integrated circuit features: charge pump; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
46+1.57 EUR
51+1.42 EUR
54+1.33 EUR
95+1.26 EUR
Mindestbestellmenge: 35
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IR2304SPBF ir2304.pdf
IR2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
46+1.57 EUR
52+1.4 EUR
57+1.26 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IR2308SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6
IR2308SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
Produkt ist nicht verfügbar
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IKCM30F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467
IKCM30F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.86 EUR
Mindestbestellmenge: 5
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ICE2PCS01GXUMA1 ICE2PCS01G.pdf
ICE2PCS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
ICE2PCS05GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
69+1.04 EUR
74+0.97 EUR
82+0.87 EUR
85+0.84 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7437PBF IRFB7437PBF.pdf
IRFB7437PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 150nC
Trade name: StrongIRFET
auf Bestellung 703 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.12 EUR
64+1.12 EUR
74+0.98 EUR
100+0.92 EUR
250+0.84 EUR
500+0.79 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IR21834SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff
IR21834SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N120R5XKSA1 IHW30N120R5.pdf
IHW30N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
25+2.86 EUR
30+2.57 EUR
120+2.49 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N06S5L073ATMA1 Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 168A
Technology: OptiMOS™ 5
Gate charge: 22.6nC
On-state resistance: 9.8mΩ
Power dissipation: 52W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N06S5N074ATMA1 Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 168A
Technology: OptiMOS™ 5
Gate charge: 20nC
On-state resistance: 9mΩ
Power dissipation: 52W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA060N06NM5SXKSA1 Infineon-IPA060N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cebbb676e20
IPA060N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 224A
Technology: OptiMOS™ 3
On-state resistance: 6mΩ
Power dissipation: 33W
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPA060N06NXKSA1 IPA060N06N-DTE.pdf
IPA060N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™
On-state resistance: 6mΩ
Power dissipation: 33W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z24NPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B672F1A6F5005056AB5A8F&compId=irf9z24n.pdf?ci_sign=86417c6f7b297148bbf68c7249788f86ad2c878e
IRF9Z24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 12.7nC
Power dissipation: 45W
auf Bestellung 846 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
139+0.52 EUR
150+0.48 EUR
250+0.43 EUR
500+0.39 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z24NSTRLPBF Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6404E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 7084 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
758+0.094 EUR
794+0.09 EUR
1005+0.071 EUR
1112+0.064 EUR
1200+0.06 EUR
1263+0.057 EUR
Mindestbestellmenge: 625
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IRLR3410TRPBF description irlr3410pbf.pdf
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
136+0.53 EUR
145+0.49 EUR
154+0.47 EUR
163+0.44 EUR
500+0.38 EUR
1000+0.36 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRRPBF irlr3410pbf.pdf
IRLR3410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS127H6327XTSA2 BSS127H6327XTSA2.pdf
BSS127H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 500Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 3336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
230+0.31 EUR
281+0.25 EUR
332+0.22 EUR
391+0.18 EUR
562+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 167
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BAR6402VH6327XTSA1 BAR64xx_Ser.pdf
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
334+0.21 EUR
556+0.13 EUR
685+0.1 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9BE52A653EB120D3&compId=IHW20N120R5.pdf?ci_sign=9078d3fe050273e18820feb3c35340de2d9578db
IHW20N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 440ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.16 EUR
23+3.1 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRF7317TRPBF description irf7317pbf.pdf
IRF7317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Case: SO8
Mounting: SMD
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
On-state resistance: 29/58mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2110SPBF description pVersion=0046&contRep=ZT&docId=E1C04EA1920764F1A6F5005056AB5A8F&compId=irs2110.pdf?ci_sign=d7e6b7c7a85603dbb88ebe28cd2f0be131bac1f8
IRS2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Case: SO16
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Turn-off time: 137ns
Turn-on time: 155ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 500V
Kind of package: tube
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
20+3.72 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118PBF pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c
IRS2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Case: DIP8
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: THT
Kind of package: tube
Output current: -600...290mA
Turn-off time: 140ns
Turn-on time: 0.2µs
Power: 1W
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118SPBF pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c
IRS2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Case: SO8
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Kind of package: tube
Output current: -600...290mA
Turn-off time: 140ns
Turn-on time: 0.2µs
Power: 625mW
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR116SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35
BCR116SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Type of transistor: NPN x2
Kind of transistor: BRT
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
auf Bestellung 719 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
642+0.11 EUR
719+0.1 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS16UE6327HTSA1 BAS16SH6327XTSA1.pdf
BAS16UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
455+0.16 EUR
491+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BAV70UE6327HTSA1 BAV70E6327HTSA1.pdf
BAV70UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 5659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2977+0.024 EUR
Mindestbestellmenge: 2977
Im Einkaufswagen  Stück im Wert von  UAH
BAV99UE6327HTSA1 BAV99SH6327XTSA1.pdf
BAV99UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2749 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
481+0.15 EUR
596+0.12 EUR
676+0.11 EUR
Mindestbestellmenge: 481
Im Einkaufswagen  Stück im Wert von  UAH
BAS4004E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Max. off-state voltage: 40V
Load current: 0.12A
Max. forward impulse current: 0.2A
Case: SOT23
Semiconductor structure: double series
Type of diode: Schottky switching
Mounting: SMD
Power dissipation: 0.25W
Max. forward voltage: 1V
auf Bestellung 6235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
532+0.13 EUR
676+0.11 EUR
1247+0.057 EUR
3000+0.054 EUR
Mindestbestellmenge: 385
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BAS4005E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4005E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
417+0.17 EUR
455+0.16 EUR
575+0.12 EUR
648+0.11 EUR
776+0.092 EUR
908+0.079 EUR
1092+0.065 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BAS4007E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4007E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 40V
Semiconductor structure: double independent
auf Bestellung 885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
365+0.2 EUR
459+0.16 EUR
511+0.14 EUR
633+0.11 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BAT1503WE6327HTSA1 BAT1503WE6327HTSA1.pdf
BAT1503WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Max. off-state voltage: 4V
Load current: 0.11A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Power dissipation: 0.1W
auf Bestellung 3530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
146+0.49 EUR
167+0.43 EUR
193+0.37 EUR
202+0.35 EUR
231+0.31 EUR
500+0.23 EUR
Mindestbestellmenge: 107
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SMBTA42E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD738071820F5EA&compId=SMBTA42.pdf?ci_sign=9899fa88d5c056e78cf168f4e052d2705dc28676
SMBTA42E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 3078 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
281+0.25 EUR
428+0.17 EUR
517+0.14 EUR
758+0.094 EUR
1000+0.083 EUR
3000+0.073 EUR
Mindestbestellmenge: 209
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BC856UE6327 BC856UE6327.pdf
BC856UE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
410+0.17 EUR
521+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 410
Im Einkaufswagen  Stück im Wert von  UAH
BFR106E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C71BCCE2211C&compId=BFR106E6327-dte.pdf?ci_sign=41a49cfb5261526e3a9fbc63bc4a5f9d07c0e4e0
BFR106E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 16V
Collector current: 0.21A
Power dissipation: 0.7W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 1593 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
256+0.28 EUR
334+0.21 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 200
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