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BFR181WH6327XTSA1 BFR181WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC244ACA589D3D7&compId=BFR181WH6327.pdf?ci_sign=73bcb88578474fc2ccb23c7942861156c0acb869 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Collector current: 20mA
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 1835 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
556+0.13 EUR
723+0.099 EUR
820+0.087 EUR
918+0.078 EUR
1025+0.07 EUR
Mindestbestellmenge: 455
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SPD04N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP04N80C3 SPP04N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74363D64915EA&compId=SPP04N80C3.pdf?ci_sign=634f55a9ae6c6b2461f8c0a2174b7a09f2113185 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 309 Stücke:
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35+2.04 EUR
40+1.82 EUR
44+1.63 EUR
50+1.54 EUR
Mindestbestellmenge: 35
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IRFB7530PBF IRFB7530PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 212 Stücke:
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21+3.53 EUR
22+3.36 EUR
28+2.57 EUR
33+2.2 EUR
50+1.83 EUR
100+1.7 EUR
Mindestbestellmenge: 21
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IRFP7530PBF IRFP7530PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6A684F93A41EC&compId=irfp7530pbf.pdf?ci_sign=9ac261215de2ad423fa2591b6c80df9d839c61a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Trade name: StrongIRFET
Polarisation: unipolar
Gate charge: 274nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 341W
Drain-source voltage: 60V
Drain current: 281A
Case: TO247AC
Kind of package: tube
auf Bestellung 36 Stücke:
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17+4.45 EUR
18+4.2 EUR
25+3.13 EUR
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BSS209PWH6327XTSA1 BSS209PWH6327XTSA1 INFINEON TECHNOLOGIES BSS209PW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -630mA
Drain-source voltage: -20V
On-state resistance: 0.55Ω
Power dissipation: 0.3W
auf Bestellung 3649 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
544+0.13 EUR
745+0.096 EUR
848+0.084 EUR
1114+0.064 EUR
1177+0.061 EUR
Mindestbestellmenge: 417
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BSP171PH6327XTSA1 BSP171PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9213BC79B0F1CC&compId=BSP171PH6327XTSA1-dte.pdf?ci_sign=274099176c997552a32d0a5e51cc2bc110b71f8f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 3596 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
119+0.6 EUR
155+0.46 EUR
250+0.42 EUR
500+0.38 EUR
1000+0.35 EUR
2000+0.33 EUR
Mindestbestellmenge: 61
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IRFB7440PBF IRFB7440PBF INFINEON TECHNOLOGIES IRFB7440PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 844 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
80+0.9 EUR
91+0.79 EUR
Mindestbestellmenge: 60
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IRFR4104TRPBF IRFR4104TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD0D220F9975EA&compId=IRFR4104TRPBF.pdf?ci_sign=830393c4e09abe5762fb941f8c9c6d4ae5a4c9c8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 140W
Drain current: 119A
auf Bestellung 1151 Stücke:
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60+1.2 EUR
79+0.92 EUR
Mindestbestellmenge: 60
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BAT6402VH6327XTSA1 BAT6402VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Case: SC79
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 10275 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
313+0.23 EUR
363+0.2 EUR
572+0.13 EUR
746+0.096 EUR
1000+0.086 EUR
3000+0.077 EUR
Mindestbestellmenge: 209
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TLE4906KHTSA1 TLE4906KHTSA1 INFINEON TECHNOLOGIES Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 760 Stücke:
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100+0.72 EUR
112+0.64 EUR
118+0.61 EUR
121+0.59 EUR
Mindestbestellmenge: 100
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TLE4935L TLE4935L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E235614E8CC399F1A303005056AB0C4F&compId=TLE49x5L.PDF?ci_sign=5944ef1bb79c45f45003bec140a25aecf3323769 Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: latch
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Mounting: THT
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
55+1.3 EUR
59+1.23 EUR
100+1.13 EUR
200+1.04 EUR
Mindestbestellmenge: 47
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BSS816NWH6327XTSA1 BSS816NWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A842AAD03C310B&compId=BSS816NWH6327XTSA1.pdf?ci_sign=0330cb7ff020b4a0a3d4eb05d602d7866cbabb9a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3079 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
496+0.14 EUR
642+0.11 EUR
722+0.099 EUR
860+0.083 EUR
987+0.073 EUR
1153+0.062 EUR
3000+0.049 EUR
Mindestbestellmenge: 334
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BAT1704WH6327XTSA1 BAT1704WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. forward voltage: 0.6V
Max. off-state voltage: 4V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 142 Stücke:
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142+0.5 EUR
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BFP405H6327XTSA1 BFP405H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD623B4773655EA&compId=BFP405.pdf?ci_sign=bbd5eba073d89df9b5be3a85a32e193fbe8f17b9 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Kind of package: reel; tape
Polarisation: bipolar
Technology: SIEGET™
Type of transistor: NPN
Mounting: SMD
Case: SOT343
Kind of transistor: RF
Collector current: 25mA
Power dissipation: 75mW
Collector-emitter voltage: 4.5V
Current gain: 90...130
Frequency: 25GHz
Produkt ist nicht verfügbar
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IRFS4229TRLPBF IRFS4229TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C86ABB5A59F1A303005056AB0C4F&compId=irfs4229pbf.pdf?ci_sign=610a1310601004a142c32c1e433d2c89212cbf1e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4321TRLPBF IRFS4321TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF51891A1A95EA&compId=IRFS4321TRLPBF.pdf?ci_sign=a2765fa9ff0e7e96465d26ae8fb10a38c345d12f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 330W
Drain current: 83A
auf Bestellung 423 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.47 EUR
28+2.63 EUR
31+2.37 EUR
50+2.19 EUR
100+2.02 EUR
250+1.76 EUR
Mindestbestellmenge: 21
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PVT322PBF PVT322PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0C9ACEC8401EC&compId=pvt322.pdf?ci_sign=b9abbd52b80cec3b819c7a498466d806bbe1483b Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRFHM830TRPBF IRFHM830TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BBBE0D2352F1A303005056AB0C4F&compId=irfhm830pbf.pdf?ci_sign=7760142d87f380f048badd1b91634d932e827dd0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS223PWH6327XTSA1 BSS223PWH6327XTSA1 INFINEON TECHNOLOGIES BSS223PWH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
472+0.15 EUR
734+0.098 EUR
890+0.08 EUR
1053+0.068 EUR
Mindestbestellmenge: 295
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IRFS4310TRLPBF IRFS4310TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C88B246D09F1A303005056AB0C4F&compId=irfs4310pbf.pdf?ci_sign=2ba0ed2c7db4f06ecd950a74a0a6d9e52fd245bf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS7437TRLPBF IRFS7437TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF862685D275EA&compId=IRFS7437TRLPBF.pdf?ci_sign=a3f823d66bb8afd4cb57907e326fc5e790c54ebf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 638 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.1 EUR
Mindestbestellmenge: 35
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BSC252N10NSFGATMA1 BSC252N10NSFGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB4E314A0011C&compId=BSC252N10NSFG-DTE.pdf?ci_sign=ec7850502a6223baabd11b26da46ad4a4a538a22 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR6225TRPBF IRLR6225TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222805218164EF1A303005056AB0C4F&compId=irlr6225pbf.pdf?ci_sign=c90e685b7210caa8a81bba363c2cbb3e203cae67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1976 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
92+0.79 EUR
108+0.67 EUR
116+0.62 EUR
250+0.55 EUR
Mindestbestellmenge: 61
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IRF7410TRPBF IRF7410TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A23D233598F1A303005056AB0C4F&compId=irf7410pbf.pdf?ci_sign=ed56f1efe816eb53c277cc5a0dcc077dfacc8801 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB7446PBF IRFB7446PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAD99D30235EA&compId=IRFB7446PBF.pdf?ci_sign=6a49d11612e82c301cf8185b0441112f35f31c0e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
71+1 EUR
Mindestbestellmenge: 47
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IRF7832TRPBF IRF7832TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AC5A4F034FF1A303005056AB0C4F&compId=irf7832pbf.pdf?ci_sign=f6126aa60b44ed174e53d7e45af6de5bc1178cf8 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 502 Stücke:
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BSP135H6327XTSA1 BSP135H6327XTSA1 INFINEON TECHNOLOGIES BSP135H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Case: SOT223
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
auf Bestellung 1165 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
77+0.93 EUR
92+0.78 EUR
100+0.72 EUR
200+0.66 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.56 EUR
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IAUZ40N08S5N100ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRS2101SPBF IRS2101SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E26E5F1A6F5005056AB5A8F&compId=irs2101pbf.pdf?ci_sign=0c7d1ed5d887e67d675cd1f685c2f6e8713c1678 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 230ns
Power: 625mW
Part status: Not recommended for new designs
auf Bestellung 121 Stücke:
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63+1.14 EUR
71+1.02 EUR
88+0.82 EUR
95+0.76 EUR
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BAT1705WH6327XTSA1 BAT1705WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. forward voltage: 0.6V
Max. off-state voltage: 4V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 628 Stücke:
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IRLMS5703TRPBF IRLMS5703TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227D26FA7464F1A303005056AB0C4F&compId=irlms5703pbf.pdf?ci_sign=38add10ed924f0e4045c7b62faae0750f826b459 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRS2168DSTRPBF IRS2168DSTRPBF INFINEON TECHNOLOGIES irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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BGSX22G2A10E6327XTSA1 BGSX22G2A10E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFB2A0C02A73D1&compId=BGSX22G2A10.pdf?ci_sign=111a42298677fba8d83d7c2b08f085f6ec5f0ed5 Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Application: telecommunication
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Number of channels: 2
Bandwidth: 0.1...6GHz
Case: ATSLP-10-2
auf Bestellung 61 Stücke:
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61+1.17 EUR
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BAT6405WH6327XTSA1 BAT6405WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
500+0.14 EUR
550+0.13 EUR
736+0.097 EUR
893+0.08 EUR
Mindestbestellmenge: 385
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IRF4104PBF IRF4104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7AF6F1A6F5005056AB5A8F&compId=irf4104.pdf?ci_sign=13dddd15d243d1a7f4c02de7c9114bd8bbce11a4 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Technology: HEXFET®
Case: TO220AB
Kind of channel: enhancement
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 5.5mΩ
Power dissipation: 140W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
auf Bestellung 149 Stücke:
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57+1.27 EUR
66+1.09 EUR
100+1 EUR
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1ED020I12F2XUMA1 1ED020I12F2XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD881E853F2259&compId=1ED020I12-F2.pdf?ci_sign=7a0aa10f2c5c9bc192268ae50cfca85594182ebe Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -2...2A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-16-15
Supply voltage: 0...28V; 4.5...5.5V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 0.6/1.2kV
Technology: EiceDRIVER™
Topology: single transistor
Protection: undervoltage UVP
auf Bestellung 986 Stücke:
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17+4.33 EUR
20+3.72 EUR
21+3.42 EUR
Mindestbestellmenge: 17
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1ED020I12FA2XUMA2 INFINEON TECHNOLOGIES Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
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1ED020I12FXUMA2 INFINEON TECHNOLOGIES 1ED020I12-F_Ver2.3_May2011.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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BFP640H6327XTSA1 BFP640H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5DD820&compId=Infineon-BFP640-DS-v03_00-EN.pdf?ci_sign=8598667148023825c70ff370d5b13105b6eb907b Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 4.1V
Current gain: 110...270
Polarisation: bipolar
auf Bestellung 2737 Stücke:
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114+0.63 EUR
145+0.49 EUR
182+0.39 EUR
243+0.29 EUR
257+0.28 EUR
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BFP760H6327XTSA1 BFP760H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD90FA0EABC59E80D3&compId=BFP760.pdf?ci_sign=1929f603bc546f8a545134befdd1ff3f3e6f452c Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 45GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 2096 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
209+0.34 EUR
232+0.31 EUR
241+0.3 EUR
262+0.27 EUR
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IPP039N04LGXKSA1 IPP039N04LGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E969F612F1E11C&compId=IPP039N04LG-DTE.pdf?ci_sign=1ab9746543755d577d3301e9081234380060d3de Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
auf Bestellung 66 Stücke:
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50+1.46 EUR
63+1.14 EUR
66+1.09 EUR
Mindestbestellmenge: 50
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IRFR8314TRPBF IRFR8314TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBEE6ACC2908143&compId=IRFR8314TRPBF.pdf?ci_sign=62635df23b932e52fbdf293ba7105247b029c798 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Gate charge: 36nC
On-state resistance: 3.1mΩ
Power dissipation: 125W
Gate-source voltage: ±20V
Drain current: 127A
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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IPA80R900P7XKSA1 IPA80R900P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD451B19C0143&compId=IPA80R900P7.pdf?ci_sign=4099e9ca1d487bf2abc3da68f46df64d1678847d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Mounting: THT
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 27W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
auf Bestellung 76 Stücke:
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44+1.66 EUR
55+1.3 EUR
71+1.02 EUR
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BAS3005B02VH6327XTSA1 BAS3005B02VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF44459099C469&compId=BAS3005B02VH6327XT.pdf?ci_sign=78eead26a8a3e3ccae040d2a59e4ef7c2af2aac4 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Type of diode: Schottky switching
auf Bestellung 1660 Stücke:
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358+0.2 EUR
410+0.17 EUR
532+0.13 EUR
625+0.11 EUR
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BTS6133D BTS6133D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987EA20CFB6469&compId=BTS6133D.pdf?ci_sign=2f43acd29dc3b9b6e224e7f86f62b1384a1b7c82 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2526 Stücke:
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16+4.52 EUR
26+2.79 EUR
31+2.36 EUR
34+2.16 EUR
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BTS6143D BTS6143D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B42634788B6469&compId=BTS6143D.pdf?ci_sign=fc01caa9553195a299c036982da51db7e3ca4de4 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Mounting: SMD
Number of channels: 1
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Kind of output: N-Channel
auf Bestellung 2389 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
28+2.57 EUR
30+2.43 EUR
50+2.32 EUR
100+2.2 EUR
250+2.06 EUR
Mindestbestellmenge: 24
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TT215N22KOF TT215N22KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE6233D8518469&compId=TT215N22KOF.pdf?ci_sign=16d94dac587ccb4d664cead3a8217b67fb2e7f68 Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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BA89202VH6127XTSA1 BA89202VH6127XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6 Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 2272 Stücke:
Lieferzeit 14-21 Tag (e)
582+0.12 EUR
962+0.074 EUR
1260+0.057 EUR
1454+0.049 EUR
Mindestbestellmenge: 582
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FF200R12KT4HOSA1 FF200R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD7E380C25A259&compId=FF200R12KT4.pdf?ci_sign=5e50d6ff781eb9cb0c9d8f539521efc04dd4d0ba Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Topology: IGBT half-bridge
auf Bestellung 5 Stücke:
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1+107.25 EUR
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF602B81B1258BF&compId=FF45MR12W1M1B11.pdf?ci_sign=f5b3f9ed9a3dcffcc3c66b2489eb90dc08bf9b53 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
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1+74.82 EUR
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IPAN70R750P7SXKSA1 IPAN70R750P7SXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC73D185F653D1&compId=IPAN70R750P7S.pdf?ci_sign=8dce55abf8132a1c9306f3e6d758a5133e9ded1c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Mounting: THT
Case: TO220FP
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.75Ω
Drain current: 4A
Gate-source voltage: ±16V
Power dissipation: 20.8W
Drain-source voltage: 700V
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
132+0.54 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
BAS7006WH6327XTSA1 BAS7006WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
407+0.18 EUR
589+0.12 EUR
863+0.083 EUR
1005+0.071 EUR
3000+0.058 EUR
Mindestbestellmenge: 358
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1EDN7550BXTSA1 1EDN7550BXTSA1 INFINEON TECHNOLOGIES 1EDN7550B.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Case: PG-SOT23-6
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
79+0.91 EUR
87+0.82 EUR
102+0.71 EUR
250+0.68 EUR
500+0.66 EUR
1000+0.62 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS1902TRPBF IRLMS1902TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227CD3BEA965F1A303005056AB0C4F&compId=irlms1902pbf.pdf?ci_sign=e136a626b5a031e6f0ab75cf9615f2ae6f830f66 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS1503TRPBF IRLMS1503TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227CBB1072A5F1A303005056AB0C4F&compId=irlms1503pbf.pdf?ci_sign=6735421fd4c509c3d1d98293129cb2545deb82bc description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL4010PBF IRFSL4010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C7C5DE110DF1A303005056AB0C4F&compId=irfs4010pbf.pdf?ci_sign=a979ab89e260f0c2fefc1124d2422354bfef6092 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 375W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IRS2104SPBF IRS2104SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E2701F1A6F5005056AB5A8F&compId=irs2104.pdf?ci_sign=1d377a7bf2686aea3a386dc39bd6d62ec322f92d Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
44+1.63 EUR
50+1.43 EUR
95+1.3 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PH6327XTSA2 BSS84PH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD636A07D1395EA&compId=BSS84P.pdf?ci_sign=4872a4e661c9d1e5d5d410492037d03658d4e911 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -140mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 0.37nC
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
368+0.19 EUR
472+0.15 EUR
635+0.11 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EE217E26F1BF&compId=IPB65R099C6-DTE.pdf?ci_sign=715c1f68c860329bf7686cf793fb138854a750db Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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BFR181WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC244ACA589D3D7&compId=BFR181WH6327.pdf?ci_sign=73bcb88578474fc2ccb23c7942861156c0acb869
BFR181WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Collector current: 20mA
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 1835 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
556+0.13 EUR
723+0.099 EUR
820+0.087 EUR
918+0.078 EUR
1025+0.07 EUR
Mindestbestellmenge: 455
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SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP04N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74363D64915EA&compId=SPP04N80C3.pdf?ci_sign=634f55a9ae6c6b2461f8c0a2174b7a09f2113185
SPP04N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 309 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
40+1.82 EUR
44+1.63 EUR
50+1.54 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7530PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67
IRFB7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
22+3.36 EUR
28+2.57 EUR
33+2.2 EUR
50+1.83 EUR
100+1.7 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRFP7530PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6A684F93A41EC&compId=irfp7530pbf.pdf?ci_sign=9ac261215de2ad423fa2591b6c80df9d839c61a7
IRFP7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Trade name: StrongIRFET
Polarisation: unipolar
Gate charge: 274nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 341W
Drain-source voltage: 60V
Drain current: 281A
Case: TO247AC
Kind of package: tube
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.45 EUR
18+4.2 EUR
25+3.13 EUR
Mindestbestellmenge: 17
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BSS209PWH6327XTSA1 BSS209PW.pdf
BSS209PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -630mA
Drain-source voltage: -20V
On-state resistance: 0.55Ω
Power dissipation: 0.3W
auf Bestellung 3649 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
544+0.13 EUR
745+0.096 EUR
848+0.084 EUR
1114+0.064 EUR
1177+0.061 EUR
Mindestbestellmenge: 417
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BSP171PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9213BC79B0F1CC&compId=BSP171PH6327XTSA1-dte.pdf?ci_sign=274099176c997552a32d0a5e51cc2bc110b71f8f
BSP171PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 3596 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
119+0.6 EUR
155+0.46 EUR
250+0.42 EUR
500+0.38 EUR
1000+0.35 EUR
2000+0.33 EUR
Mindestbestellmenge: 61
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IRFB7440PBF IRFB7440PBF.pdf
IRFB7440PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 844 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
80+0.9 EUR
91+0.79 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4104TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD0D220F9975EA&compId=IRFR4104TRPBF.pdf?ci_sign=830393c4e09abe5762fb941f8c9c6d4ae5a4c9c8
IRFR4104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 140W
Drain current: 119A
auf Bestellung 1151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
79+0.92 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
BAT6402VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Case: SC79
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 10275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
313+0.23 EUR
363+0.2 EUR
572+0.13 EUR
746+0.096 EUR
1000+0.086 EUR
3000+0.077 EUR
Mindestbestellmenge: 209
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TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
112+0.64 EUR
118+0.61 EUR
121+0.59 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
TLE4935L pVersion=0046&contRep=ZT&docId=E235614E8CC399F1A303005056AB0C4F&compId=TLE49x5L.PDF?ci_sign=5944ef1bb79c45f45003bec140a25aecf3323769
TLE4935L
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: latch
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Mounting: THT
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
55+1.3 EUR
59+1.23 EUR
100+1.13 EUR
200+1.04 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
BSS816NWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A842AAD03C310B&compId=BSS816NWH6327XTSA1.pdf?ci_sign=0330cb7ff020b4a0a3d4eb05d602d7866cbabb9a
BSS816NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3079 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
496+0.14 EUR
642+0.11 EUR
722+0.099 EUR
860+0.083 EUR
987+0.073 EUR
1153+0.062 EUR
3000+0.049 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BAT1704WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0
BAT1704WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. forward voltage: 0.6V
Max. off-state voltage: 4V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
142+0.5 EUR
Mindestbestellmenge: 142
Im Einkaufswagen  Stück im Wert von  UAH
BFP405H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD623B4773655EA&compId=BFP405.pdf?ci_sign=bbd5eba073d89df9b5be3a85a32e193fbe8f17b9
BFP405H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Kind of package: reel; tape
Polarisation: bipolar
Technology: SIEGET™
Type of transistor: NPN
Mounting: SMD
Case: SOT343
Kind of transistor: RF
Collector current: 25mA
Power dissipation: 75mW
Collector-emitter voltage: 4.5V
Current gain: 90...130
Frequency: 25GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4229TRLPBF pVersion=0046&contRep=ZT&docId=E221C86ABB5A59F1A303005056AB0C4F&compId=irfs4229pbf.pdf?ci_sign=610a1310601004a142c32c1e433d2c89212cbf1e
IRFS4229TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4321TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF51891A1A95EA&compId=IRFS4321TRLPBF.pdf?ci_sign=a2765fa9ff0e7e96465d26ae8fb10a38c345d12f
IRFS4321TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 330W
Drain current: 83A
auf Bestellung 423 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
28+2.63 EUR
31+2.37 EUR
50+2.19 EUR
100+2.02 EUR
250+1.76 EUR
Mindestbestellmenge: 21
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PVT322PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0C9ACEC8401EC&compId=pvt322.pdf?ci_sign=b9abbd52b80cec3b819c7a498466d806bbe1483b
PVT322PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRFHM830TRPBF pVersion=0046&contRep=ZT&docId=E221BBBE0D2352F1A303005056AB0C4F&compId=irfhm830pbf.pdf?ci_sign=7760142d87f380f048badd1b91634d932e827dd0
IRFHM830TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS223PWH6327XTSA1 BSS223PWH6327XTSA1-dte.pdf
BSS223PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Case: PG-SOT-323
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
472+0.15 EUR
734+0.098 EUR
890+0.08 EUR
1053+0.068 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4310TRLPBF pVersion=0046&contRep=ZT&docId=E221C88B246D09F1A303005056AB0C4F&compId=irfs4310pbf.pdf?ci_sign=2ba0ed2c7db4f06ecd950a74a0a6d9e52fd245bf
IRFS4310TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7437TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF862685D275EA&compId=IRFS7437TRLPBF.pdf?ci_sign=a3f823d66bb8afd4cb57907e326fc5e790c54ebf
IRFS7437TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 638 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BSC252N10NSFGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB4E314A0011C&compId=BSC252N10NSFG-DTE.pdf?ci_sign=ec7850502a6223baabd11b26da46ad4a4a538a22
BSC252N10NSFGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR6225TRPBF pVersion=0046&contRep=ZT&docId=E222805218164EF1A303005056AB0C4F&compId=irlr6225pbf.pdf?ci_sign=c90e685b7210caa8a81bba363c2cbb3e203cae67
IRLR6225TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
92+0.79 EUR
108+0.67 EUR
116+0.62 EUR
250+0.55 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
IRF7410TRPBF pVersion=0046&contRep=ZT&docId=E221A23D233598F1A303005056AB0C4F&compId=irf7410pbf.pdf?ci_sign=ed56f1efe816eb53c277cc5a0dcc077dfacc8801
IRF7410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB7446PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAD99D30235EA&compId=IRFB7446PBF.pdf?ci_sign=6a49d11612e82c301cf8185b0441112f35f31c0e
IRFB7446PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
71+1 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IRF7832TRPBF description pVersion=0046&contRep=ZT&docId=E221AC5A4F034FF1A303005056AB0C4F&compId=irf7832pbf.pdf?ci_sign=f6126aa60b44ed174e53d7e45af6de5bc1178cf8
IRF7832TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
95+0.76 EUR
Mindestbestellmenge: 91
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BSP135H6327XTSA1 BSP135H6327XTSA1.pdf
BSP135H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Case: SOT223
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
auf Bestellung 1165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
77+0.93 EUR
92+0.78 EUR
100+0.72 EUR
200+0.66 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.56 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2101SPBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E26E5F1A6F5005056AB5A8F&compId=irs2101pbf.pdf?ci_sign=0c7d1ed5d887e67d675cd1f685c2f6e8713c1678
IRS2101SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 230ns
Power: 625mW
Part status: Not recommended for new designs
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
71+1.02 EUR
88+0.82 EUR
95+0.76 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
BAT1705WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0
BAT1705WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. forward voltage: 0.6V
Max. off-state voltage: 4V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 628 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
628+0.11 EUR
Mindestbestellmenge: 628
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IRLMS5703TRPBF pVersion=0046&contRep=ZT&docId=E2227D26FA7464F1A303005056AB0C4F&compId=irlms5703pbf.pdf?ci_sign=38add10ed924f0e4045c7b62faae0750f826b459
IRLMS5703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRS2168DSTRPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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BGSX22G2A10E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFB2A0C02A73D1&compId=BGSX22G2A10.pdf?ci_sign=111a42298677fba8d83d7c2b08f085f6ec5f0ed5
BGSX22G2A10E6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Application: telecommunication
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Number of channels: 2
Bandwidth: 0.1...6GHz
Case: ATSLP-10-2
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
Mindestbestellmenge: 61
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BAT6405WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
500+0.14 EUR
550+0.13 EUR
736+0.097 EUR
893+0.08 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
IRF4104PBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7AF6F1A6F5005056AB5A8F&compId=irf4104.pdf?ci_sign=13dddd15d243d1a7f4c02de7c9114bd8bbce11a4
IRF4104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Technology: HEXFET®
Case: TO220AB
Kind of channel: enhancement
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 5.5mΩ
Power dissipation: 140W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
57+1.27 EUR
66+1.09 EUR
100+1 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12F2XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD881E853F2259&compId=1ED020I12-F2.pdf?ci_sign=7a0aa10f2c5c9bc192268ae50cfca85594182ebe
1ED020I12F2XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -2...2A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-16-15
Supply voltage: 0...28V; 4.5...5.5V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 0.6/1.2kV
Technology: EiceDRIVER™
Topology: single transistor
Protection: undervoltage UVP
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
20+3.72 EUR
21+3.42 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FA2XUMA2 Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FXUMA2 1ED020I12-F_Ver2.3_May2011.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP640H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5DD820&compId=Infineon-BFP640-DS-v03_00-EN.pdf?ci_sign=8598667148023825c70ff370d5b13105b6eb907b
BFP640H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 4.1V
Current gain: 110...270
Polarisation: bipolar
auf Bestellung 2737 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
145+0.49 EUR
182+0.39 EUR
243+0.29 EUR
257+0.28 EUR
Mindestbestellmenge: 114
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BFP760H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD90FA0EABC59E80D3&compId=BFP760.pdf?ci_sign=1929f603bc546f8a545134befdd1ff3f3e6f452c
BFP760H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 45GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 2096 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
209+0.34 EUR
232+0.31 EUR
241+0.3 EUR
262+0.27 EUR
Mindestbestellmenge: 173
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IPP039N04LGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E969F612F1E11C&compId=IPP039N04LG-DTE.pdf?ci_sign=1ab9746543755d577d3301e9081234380060d3de
IPP039N04LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
63+1.14 EUR
66+1.09 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFR8314TRPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBEE6ACC2908143&compId=IRFR8314TRPBF.pdf?ci_sign=62635df23b932e52fbdf293ba7105247b029c798
IRFR8314TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Gate charge: 36nC
On-state resistance: 3.1mΩ
Power dissipation: 125W
Gate-source voltage: ±20V
Drain current: 127A
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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IPA80R900P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD451B19C0143&compId=IPA80R900P7.pdf?ci_sign=4099e9ca1d487bf2abc3da68f46df64d1678847d
IPA80R900P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Mounting: THT
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 27W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Case: TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
55+1.3 EUR
71+1.02 EUR
Mindestbestellmenge: 44
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BAS3005B02VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF44459099C469&compId=BAS3005B02VH6327XT.pdf?ci_sign=78eead26a8a3e3ccae040d2a59e4ef7c2af2aac4
BAS3005B02VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Type of diode: Schottky switching
auf Bestellung 1660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
410+0.17 EUR
532+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 358
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BTS6133D pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987EA20CFB6469&compId=BTS6133D.pdf?ci_sign=2f43acd29dc3b9b6e224e7f86f62b1384a1b7c82
BTS6133D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 2526 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
26+2.79 EUR
31+2.36 EUR
34+2.16 EUR
Mindestbestellmenge: 16
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BTS6143D description pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B42634788B6469&compId=BTS6143D.pdf?ci_sign=fc01caa9553195a299c036982da51db7e3ca4de4
BTS6143D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Mounting: SMD
Number of channels: 1
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Kind of output: N-Channel
auf Bestellung 2389 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
28+2.57 EUR
30+2.43 EUR
50+2.32 EUR
100+2.2 EUR
250+2.06 EUR
Mindestbestellmenge: 24
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TT215N22KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE6233D8518469&compId=TT215N22KOF.pdf?ci_sign=16d94dac587ccb4d664cead3a8217b67fb2e7f68
TT215N22KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BA89202VH6127XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6
BA89202VH6127XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 2272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
582+0.12 EUR
962+0.074 EUR
1260+0.057 EUR
1454+0.049 EUR
Mindestbestellmenge: 582
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FF200R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD7E380C25A259&compId=FF200R12KT4.pdf?ci_sign=5e50d6ff781eb9cb0c9d8f539521efc04dd4d0ba
FF200R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Topology: IGBT half-bridge
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+107.25 EUR
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FF45MR12W1M1B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF602B81B1258BF&compId=FF45MR12W1M1B11.pdf?ci_sign=f5b3f9ed9a3dcffcc3c66b2489eb90dc08bf9b53
FF45MR12W1M1B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+74.82 EUR
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IPAN70R750P7SXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC73D185F653D1&compId=IPAN70R750P7S.pdf?ci_sign=8dce55abf8132a1c9306f3e6d758a5133e9ded1c
IPAN70R750P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Mounting: THT
Case: TO220FP
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 8.3nC
On-state resistance: 0.75Ω
Drain current: 4A
Gate-source voltage: ±16V
Power dissipation: 20.8W
Drain-source voltage: 700V
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
132+0.54 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 117
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BAS7006WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7006WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
407+0.18 EUR
589+0.12 EUR
863+0.083 EUR
1005+0.071 EUR
3000+0.058 EUR
Mindestbestellmenge: 358
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1EDN7550BXTSA1 1EDN7550B.pdf
1EDN7550BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Case: PG-SOT23-6
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
79+0.91 EUR
87+0.82 EUR
102+0.71 EUR
250+0.68 EUR
500+0.66 EUR
1000+0.62 EUR
Mindestbestellmenge: 70
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IRLMS1902TRPBF pVersion=0046&contRep=ZT&docId=E2227CD3BEA965F1A303005056AB0C4F&compId=irlms1902pbf.pdf?ci_sign=e136a626b5a031e6f0ab75cf9615f2ae6f830f66
IRLMS1902TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS1503TRPBF description pVersion=0046&contRep=ZT&docId=E2227CBB1072A5F1A303005056AB0C4F&compId=irlms1503pbf.pdf?ci_sign=6735421fd4c509c3d1d98293129cb2545deb82bc
IRLMS1503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFSL4010PBF description pVersion=0046&contRep=ZT&docId=E221C7C5DE110DF1A303005056AB0C4F&compId=irfs4010pbf.pdf?ci_sign=a979ab89e260f0c2fefc1124d2422354bfef6092
IRFSL4010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 375W
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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IRS2104SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E2701F1A6F5005056AB5A8F&compId=irs2104.pdf?ci_sign=1d377a7bf2686aea3a386dc39bd6d62ec322f92d
IRS2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
44+1.63 EUR
50+1.43 EUR
95+1.3 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD636A07D1395EA&compId=BSS84P.pdf?ci_sign=4872a4e661c9d1e5d5d410492037d03658d4e911
BSS84PH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -140mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 0.37nC
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
368+0.19 EUR
472+0.15 EUR
635+0.11 EUR
Mindestbestellmenge: 278
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IPB65R099C6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EE217E26F1BF&compId=IPB65R099C6-DTE.pdf?ci_sign=715c1f68c860329bf7686cf793fb138854a750db
IPB65R099C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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