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IRLML0060TRPBF IRLML0060TRPBF INFINEON TECHNOLOGIES irlml0060pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 17505 Stücke:
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129+0.56 EUR
187+0.38 EUR
225+0.32 EUR
325+0.22 EUR
368+0.19 EUR
500+0.16 EUR
1000+0.15 EUR
3000+0.14 EUR
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IGW75N65H5XKSA1 IGW75N65H5XKSA1 INFINEON TECHNOLOGIES IGW75N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 215ns
Turn-on time: 61ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 79 Stücke:
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19+3.79 EUR
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IGZ75N65H5XKSA1 IGZ75N65H5XKSA1 INFINEON TECHNOLOGIES IGZ75N65H5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 166nC
Kind of package: tube
Turn-off time: 415ns
Turn-on time: 37ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
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IKW75N65EH5XKSA1 IKW75N65EH5XKSA1 INFINEON TECHNOLOGIES IKW75N65EH5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 215ns
Turn-on time: 61ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
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IKW75N65ES5XKSA1 IKW75N65ES5XKSA1 INFINEON TECHNOLOGIES IKW75N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-off time: 185ns
Turn-on time: 86ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKZ75N65EL5XKSA1 IKZ75N65EL5XKSA1 INFINEON TECHNOLOGIES IKZ75N65EL5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 268W
Case: TO247-4
Mounting: THT
Gate charge: 436nC
Kind of package: tube
Turn-off time: 325ns
Turn-on time: 143ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 100A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKZ75N65ES5XKSA1 IKZ75N65ES5XKSA1 INFINEON TECHNOLOGIES IKZ75N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-off time: 427ns
Turn-on time: 71ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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SPW35N60CFD SPW35N60CFD INFINEON TECHNOLOGIES SPW35N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF540ZPBF IRF540ZPBF INFINEON TECHNOLOGIES irf540z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 838 Stücke:
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81+0.89 EUR
98+0.73 EUR
103+0.7 EUR
109+0.66 EUR
114+0.63 EUR
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IRF9530NSTRLPBF IRF9530NSTRLPBF INFINEON TECHNOLOGIES irf9530nspbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRFL014NTRPBF IRFL014NTRPBF INFINEON TECHNOLOGIES irfl014npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGB10N60TATMA1 IGB10N60TATMA1 INFINEON TECHNOLOGIES IGB10N60T-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 10A
auf Bestellung 1048 Stücke:
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76+0.94 EUR
93+0.77 EUR
100+0.73 EUR
250+0.66 EUR
500+0.63 EUR
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IGP10N60TXKSA1 IGP10N60TXKSA1 INFINEON TECHNOLOGIES IGP10N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
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41+1.74 EUR
51+1.4 EUR
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IKA10N60TXKSA1 IKA10N60TXKSA1 INFINEON TECHNOLOGIES IKA10N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Produkt ist nicht verfügbar
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IKB10N60TATMA1 IKB10N60TATMA1 INFINEON TECHNOLOGIES IKB10N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
auf Bestellung 659 Stücke:
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32+2.27 EUR
41+1.77 EUR
48+1.52 EUR
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IKD10N60RATMA1 IKD10N60RATMA1 INFINEON TECHNOLOGIES IKD10N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Produkt ist nicht verfügbar
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IKD10N60RFATMA1 IKD10N60RFATMA1 INFINEON TECHNOLOGIES IKD10N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRLU024NPBF IRLU024NPBF INFINEON TECHNOLOGIES irlr024npbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Kind of channel: enhancement
Mounting: THT
auf Bestellung 1025 Stücke:
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84+0.86 EUR
171+0.42 EUR
182+0.39 EUR
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PVG612 PVG612 INFINEON TECHNOLOGIES pvg612.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 2.4A
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
Relay variant: MOSFET
On-state resistance: 0.15Ω
Mounting: THT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 350 Stücke:
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10+7.68 EUR
11+6.99 EUR
12+6.26 EUR
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PVG612ASPBF PVG612ASPBF INFINEON TECHNOLOGIES PVG612ASPBF.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Type of relay: solid state
Switched voltage: -60...60V DC; 0...60V AC
Release time: 0.5ms
Operate time: 3.5ms
Control current: 5...25mA
On-state resistance: 0.1Ω
Max. operating current: 4A
Control voltage: 1.2V DC
Contacts configuration: SPST-NO
Manufacturer series: PVG612
Relay variant: MOSFET
auf Bestellung 183 Stücke:
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4+23.29 EUR
5+20.69 EUR
25+18.1 EUR
100+15.53 EUR
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PVG612S PVG612S INFINEON TECHNOLOGIES PVG612S.PDF description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 2.4A
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
Relay variant: MOSFET
On-state resistance: 0.15Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 436 Stücke:
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9+8.08 EUR
10+7.15 EUR
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BFR93AE6327 BFR93AE6327 INFINEON TECHNOLOGIES BFR93AE6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 9104 Stücke:
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152+0.47 EUR
183+0.39 EUR
205+0.35 EUR
237+0.3 EUR
264+0.27 EUR
285+0.25 EUR
315+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
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BFR93AWH6327 BFR93AWH6327 INFINEON TECHNOLOGIES BFR93AWH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Collector current: 90mA
Collector-emitter voltage: 20V
Frequency: 6GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 9199 Stücke:
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264+0.27 EUR
376+0.19 EUR
451+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
3000+0.13 EUR
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IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF INFINEON TECHNOLOGIES IRFZ44ZSTRRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR024NTRPBF IRLR024NTRPBF INFINEON TECHNOLOGIES irlr024npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 1960 Stücke:
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105+0.69 EUR
147+0.49 EUR
182+0.39 EUR
200+0.36 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 105
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IRLML2030TRPBF IRLML2030TRPBF INFINEON TECHNOLOGIES irlml2030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 6689 Stücke:
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200+0.36 EUR
256+0.28 EUR
302+0.24 EUR
363+0.2 EUR
554+0.13 EUR
759+0.094 EUR
1000+0.086 EUR
3000+0.077 EUR
6000+0.073 EUR
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IRLML2502TRPBF IRLML2502TRPBF INFINEON TECHNOLOGIES IRLML2502TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 9231 Stücke:
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162+0.44 EUR
225+0.32 EUR
329+0.22 EUR
388+0.18 EUR
472+0.15 EUR
538+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.097 EUR
Mindestbestellmenge: 162
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IRF2807PBF IRF2807PBF INFINEON TECHNOLOGIES irf2807.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 106.7nC
Kind of package: tube
auf Bestellung 144 Stücke:
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35+2.07 EUR
40+1.8 EUR
47+1.53 EUR
55+1.32 EUR
100+1.1 EUR
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IRF2807STRLPBF IRF2807STRLPBF INFINEON TECHNOLOGIES irf2807spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 937 Stücke:
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27+2.67 EUR
42+1.74 EUR
51+1.41 EUR
100+1.27 EUR
200+1.13 EUR
250+1.1 EUR
500+0.96 EUR
800+0.87 EUR
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IRF2807STRRPBF IRF2807STRRPBF INFINEON TECHNOLOGIES irf2807spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF2807ZPBF IRF2807ZPBF INFINEON TECHNOLOGIES irf2807z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 71nC
Kind of package: tube
auf Bestellung 41 Stücke:
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27+2.73 EUR
38+1.92 EUR
41+1.74 EUR
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IR21844SPBF IR21844SPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 15 Stücke:
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15+4.76 EUR
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IR21844STRPBF IR21844STRPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
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IR2184PBF IR2184PBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.13 EUR
29+2.52 EUR
31+2.36 EUR
50+2.26 EUR
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IR2184SPBF IR2184SPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.45 EUR
23+3.25 EUR
26+2.85 EUR
29+2.52 EUR
50+2.49 EUR
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IR2184STRPBF IR2184STRPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.8 EUR
29+2.53 EUR
31+2.35 EUR
32+2.25 EUR
100+2 EUR
250+1.9 EUR
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BAT60AE6327HTSA1 BAT60AE6327HTSA1 INFINEON TECHNOLOGIES BAT60AE6327-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 5A
Power dissipation: 1.35W
Produkt ist nicht verfügbar
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BTS452R BTS452R INFINEON TECHNOLOGIES BTS452R-DTE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 0.2Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Output voltage: 62V
auf Bestellung 1696 Stücke:
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40+1.79 EUR
42+1.72 EUR
100+1.56 EUR
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BAV70SH6327XTSA1 BAV70SH6327XTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2240 Stücke:
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481+0.15 EUR
779+0.092 EUR
876+0.082 EUR
1000+0.074 EUR
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BAV99SH6327XTSA1 BAV99SH6327XTSA1 INFINEON TECHNOLOGIES BAV99SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 1435 Stücke:
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358+0.2 EUR
410+0.17 EUR
470+0.15 EUR
552+0.13 EUR
697+0.1 EUR
1000+0.091 EUR
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IRS2092STRPBF IRS2092STRPBF INFINEON TECHNOLOGIES IRS2092.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 1090 Stücke:
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20+3.72 EUR
26+2.79 EUR
29+2.55 EUR
50+2.4 EUR
100+2.36 EUR
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IRFP064NPBF IRFP064NPBF INFINEON TECHNOLOGIES irfp064n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IRFP3206PBF IRFP3206PBF INFINEON TECHNOLOGIES irfp3206pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.59 EUR
25+2.86 EUR
31+2.33 EUR
50+2 EUR
100+1.82 EUR
125+1.77 EUR
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IRF3415PBF IRF3415PBF INFINEON TECHNOLOGIES irf3415.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 133.3nC
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
50+1.44 EUR
57+1.26 EUR
100+1.19 EUR
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IRFP150NPBF IRFP150NPBF INFINEON TECHNOLOGIES irfp150n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 110nC
Kind of package: tube
auf Bestellung 789 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
45+1.62 EUR
49+1.49 EUR
52+1.4 EUR
100+1.3 EUR
250+1.19 EUR
400+1.12 EUR
500+1.1 EUR
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IRFP054NPBF IRFP054NPBF INFINEON TECHNOLOGIES irfp054n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.1 EUR
28+2.63 EUR
33+2.2 EUR
50+1.89 EUR
100+1.69 EUR
Mindestbestellmenge: 24
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BCP5216H6327XTSA1 BCP5216H6327XTSA1 INFINEON TECHNOLOGIES BCP5216H6327XTSA1.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 60V
Case: SOT223
Type of transistor: PNP
Collector current: 1A
Power dissipation: 2W
Frequency: 125MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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SPA11N60C3XKSA1 INFINEON TECHNOLOGIES SPx11N60C3%20%28E8185%29.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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SPB11N60C3ATMA1 INFINEON TECHNOLOGIES SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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SPP11N60C3XKSA1 SPP11N60C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.25 EUR
39+1.86 EUR
50+1.43 EUR
66+1.09 EUR
Mindestbestellmenge: 32
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SPW35N60C3 SPW35N60C3 INFINEON TECHNOLOGIES SPW35N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.36 EUR
Mindestbestellmenge: 10
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IRFP4468PBF IRFP4468PBF INFINEON TECHNOLOGIES irfp4468pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Gate charge: 360nC
Technology: HEXFET®
Power dissipation: 520W
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.4 EUR
25+3.63 EUR
100+3.35 EUR
125+3.3 EUR
Mindestbestellmenge: 8
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IRLML6402TRPBF IRLML6402TRPBF INFINEON TECHNOLOGIES IRLML6402TRPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 INFINEON TECHNOLOGIES BSC100N06LS3G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Pulsed drain current: 200A
Drain current: 36A
Drain-source voltage: 60V
Gate charge: 45nC
On-state resistance: 10mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2231 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
76+0.94 EUR
87+0.83 EUR
106+0.68 EUR
250+0.6 EUR
500+0.54 EUR
1000+0.5 EUR
2000+0.46 EUR
Mindestbestellmenge: 53
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IRF7416TRPBF IRF7416TRPBF INFINEON TECHNOLOGIES irf7416qpbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
90+0.8 EUR
102+0.7 EUR
122+0.59 EUR
250+0.52 EUR
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IRF5210PBF IRF5210PBF INFINEON TECHNOLOGIES irf5210.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.12µC
On-state resistance: 60mΩ
Gate-source voltage: ±20V
auf Bestellung 1279 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
38+1.89 EUR
42+1.72 EUR
50+1.57 EUR
100+1.46 EUR
500+1.2 EUR
1000+1.12 EUR
1250+1.09 EUR
Mindestbestellmenge: 31
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IRF5210STRLPBF IRF5210STRLPBF INFINEON TECHNOLOGIES irf5210spbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.72 EUR
26+2.77 EUR
31+2.33 EUR
100+1.94 EUR
Mindestbestellmenge: 20
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IRF5210STRRPBF IRF5210STRRPBF INFINEON TECHNOLOGIES irf5210spbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2QR0665XKLA1 ICE2QR0665XKLA1 INFINEON TECHNOLOGIES Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Frequency: 39...65kHz
Operating voltage: 10.5...24V DC
Application: SMPS
Breakdown voltage: 650V
Input voltage: 85...265V
Topology: flyback
auf Bestellung 2078 Stücke:
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27+2.75 EUR
32+2.27 EUR
35+2.06 EUR
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IR4427PBF IR4427PBF INFINEON TECHNOLOGIES IR4427PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
37+1.96 EUR
40+1.82 EUR
50+1.79 EUR
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IRLML0060TRPBF irlml0060pbf.pdf
IRLML0060TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 17505 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
187+0.38 EUR
225+0.32 EUR
325+0.22 EUR
368+0.19 EUR
500+0.16 EUR
1000+0.15 EUR
3000+0.14 EUR
Mindestbestellmenge: 129
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IGW75N65H5XKSA1 IGW75N65H5.pdf
IGW75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 215ns
Turn-on time: 61ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.29 EUR
19+3.79 EUR
21+3.49 EUR
30+3.3 EUR
Mindestbestellmenge: 14
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IGZ75N65H5XKSA1 IGZ75N65H5XKSA1-DTE.pdf
IGZ75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 166nC
Kind of package: tube
Turn-off time: 415ns
Turn-on time: 37ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKW75N65EH5XKSA1 IKW75N65EH5.pdf
IKW75N65EH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 215ns
Turn-on time: 61ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKW75N65ES5XKSA1 IKW75N65ES5.pdf
IKW75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-off time: 185ns
Turn-on time: 86ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKZ75N65EL5XKSA1 IKZ75N65EL5.pdf
IKZ75N65EL5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 268W
Case: TO247-4
Mounting: THT
Gate charge: 436nC
Kind of package: tube
Turn-off time: 325ns
Turn-on time: 143ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 100A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKZ75N65ES5XKSA1 IKZ75N65ES5.pdf
IKZ75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-off time: 427ns
Turn-on time: 71ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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SPW35N60CFD SPW35N60CFD.pdf
SPW35N60CFD
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF540ZPBF description irf540z.pdf
IRF540ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 838 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
98+0.73 EUR
103+0.7 EUR
109+0.66 EUR
114+0.63 EUR
Mindestbestellmenge: 81
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IRF9530NSTRLPBF irf9530nspbf.pdf
IRF9530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFL014NTRPBF description irfl014npbf.pdf
IRFL014NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGB10N60TATMA1 IGB10N60T-DTE.pdf
IGB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 10A
auf Bestellung 1048 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
93+0.77 EUR
100+0.73 EUR
250+0.66 EUR
500+0.63 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IGP10N60TXKSA1 IGP10N60T-DTE.pdf
IGP10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
51+1.4 EUR
Mindestbestellmenge: 41
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IKA10N60TXKSA1 IKA10N60T.pdf
IKA10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Produkt ist nicht verfügbar
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IKB10N60TATMA1 IKB10N60T.pdf
IKB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
41+1.77 EUR
48+1.52 EUR
Mindestbestellmenge: 32
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IKD10N60RATMA1 IKD10N60R.pdf
IKD10N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD10N60RFATMA1 IKD10N60RF.pdf
IKD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU024NPBF description irlr024npbf.pdf
IRLU024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Kind of channel: enhancement
Mounting: THT
auf Bestellung 1025 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
171+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 84
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PVG612 description pvg612.pdf
PVG612
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 2.4A
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
Relay variant: MOSFET
On-state resistance: 0.15Ω
Mounting: THT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.61 EUR
10+7.68 EUR
11+6.99 EUR
12+6.26 EUR
Mindestbestellmenge: 9
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PVG612ASPBF PVG612ASPBF.pdf
PVG612ASPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Type of relay: solid state
Switched voltage: -60...60V DC; 0...60V AC
Release time: 0.5ms
Operate time: 3.5ms
Control current: 5...25mA
On-state resistance: 0.1Ω
Max. operating current: 4A
Control voltage: 1.2V DC
Contacts configuration: SPST-NO
Manufacturer series: PVG612
Relay variant: MOSFET
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+23.29 EUR
5+20.69 EUR
25+18.1 EUR
100+15.53 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PVG612S description PVG612S.PDF
PVG612S
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 2.4A
Switched voltage: -60...60V DC; 0...60V AC
Manufacturer series: PVG612
Relay variant: MOSFET
On-state resistance: 0.15Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.08 EUR
10+7.15 EUR
Mindestbestellmenge: 9
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BFR93AE6327 BFR93AE6327-dte.pdf
BFR93AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 90mA
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
auf Bestellung 9104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
183+0.39 EUR
205+0.35 EUR
237+0.3 EUR
264+0.27 EUR
285+0.25 EUR
315+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 152
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BFR93AWH6327 BFR93AWH6327-dte.pdf
BFR93AWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 90mA; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.3W
Case: SOT323
Mounting: SMD
Collector current: 90mA
Collector-emitter voltage: 20V
Frequency: 6GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 9199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
376+0.19 EUR
451+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
3000+0.13 EUR
Mindestbestellmenge: 264
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IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF.pdf
IRFZ44ZSTRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR024NTRPBF description irlr024npbf.pdf
IRLR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 1960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
147+0.49 EUR
182+0.39 EUR
200+0.36 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 105
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IRLML2030TRPBF irlml2030pbf.pdf
IRLML2030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 6689 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
256+0.28 EUR
302+0.24 EUR
363+0.2 EUR
554+0.13 EUR
759+0.094 EUR
1000+0.086 EUR
3000+0.077 EUR
6000+0.073 EUR
Mindestbestellmenge: 200
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IRLML2502TRPBF IRLML2502TRPBF.pdf
IRLML2502TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 9231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
225+0.32 EUR
329+0.22 EUR
388+0.18 EUR
472+0.15 EUR
538+0.13 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.097 EUR
Mindestbestellmenge: 162
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IRF2807PBF irf2807.pdf
IRF2807PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 106.7nC
Kind of package: tube
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
40+1.8 EUR
47+1.53 EUR
55+1.32 EUR
100+1.1 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807STRLPBF irf2807spbf.pdf
IRF2807STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 937 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
42+1.74 EUR
51+1.41 EUR
100+1.27 EUR
200+1.13 EUR
250+1.1 EUR
500+0.96 EUR
800+0.87 EUR
Mindestbestellmenge: 27
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IRF2807STRRPBF irf2807spbf.pdf
IRF2807STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF2807ZPBF description irf2807z.pdf
IRF2807ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 71nC
Kind of package: tube
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
38+1.92 EUR
41+1.74 EUR
Mindestbestellmenge: 27
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IR21844SPBF description IR21844SPBF.pdf
IR21844SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
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IR21844STRPBF IR21844SPBF.pdf
IR21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2184PBF IR21844SPBF.pdf
IR2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.13 EUR
29+2.52 EUR
31+2.36 EUR
50+2.26 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR2184SPBF description IR21844SPBF.pdf
IR2184SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
23+3.25 EUR
26+2.85 EUR
29+2.52 EUR
50+2.49 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2184STRPBF IR21844SPBF.pdf
IR2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
29+2.53 EUR
31+2.35 EUR
32+2.25 EUR
100+2 EUR
250+1.9 EUR
Mindestbestellmenge: 26
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BAT60AE6327HTSA1 BAT60AE6327-DTE.pdf
BAT60AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 5A
Power dissipation: 1.35W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS452R BTS452R-DTE.pdf
BTS452R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 0.2Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Output voltage: 62V
auf Bestellung 1696 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
42+1.72 EUR
100+1.56 EUR
Mindestbestellmenge: 40
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BAV70SH6327XTSA1 BAV70E6327HTSA1.pdf
BAV70SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
481+0.15 EUR
779+0.092 EUR
876+0.082 EUR
1000+0.074 EUR
Mindestbestellmenge: 481
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BAV99SH6327XTSA1 BAV99SH6327XTSA1.pdf
BAV99SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT363; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 1435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
410+0.17 EUR
470+0.15 EUR
552+0.13 EUR
697+0.1 EUR
1000+0.091 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
IRS2092STRPBF IRS2092.pdf
IRS2092STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 1090 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.72 EUR
26+2.79 EUR
29+2.55 EUR
50+2.4 EUR
100+2.36 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFP064NPBF irfp064n.pdf
IRFP064NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IRFP3206PBF irfp3206pbf.pdf
IRFP3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
25+2.86 EUR
31+2.33 EUR
50+2 EUR
100+1.82 EUR
125+1.77 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF3415PBF irf3415.pdf
IRF3415PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 133.3nC
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
50+1.44 EUR
57+1.26 EUR
100+1.19 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRFP150NPBF description irfp150n.pdf
IRFP150NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 110nC
Kind of package: tube
auf Bestellung 789 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
45+1.62 EUR
49+1.49 EUR
52+1.4 EUR
100+1.3 EUR
250+1.19 EUR
400+1.12 EUR
500+1.1 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFP054NPBF irfp054n.pdf
IRFP054NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
28+2.63 EUR
33+2.2 EUR
50+1.89 EUR
100+1.69 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BCP5216H6327XTSA1 BCP5216H6327XTSA1.pdf
BCP5216H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 60V
Case: SOT223
Type of transistor: PNP
Collector current: 1A
Power dissipation: 2W
Frequency: 125MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB11N60C3ATMA1 SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 33A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 33A
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
39+1.86 EUR
50+1.43 EUR
66+1.09 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
SPW35N60C3 SPW35N60C3.pdf
SPW35N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.36 EUR
Mindestbestellmenge: 10
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IRFP4468PBF irfp4468pbf.pdf
IRFP4468PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Gate charge: 360nC
Technology: HEXFET®
Power dissipation: 520W
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.4 EUR
25+3.63 EUR
100+3.35 EUR
125+3.3 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6402TRPBF IRLML6402TRPBF.pdf
IRLML6402TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BSC100N06LS3GATMA1 BSC100N06LS3G.pdf
BSC100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 50W; PG-TDSON-8
Case: PG-TDSON-8
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Pulsed drain current: 200A
Drain current: 36A
Drain-source voltage: 60V
Gate charge: 45nC
On-state resistance: 10mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
76+0.94 EUR
87+0.83 EUR
106+0.68 EUR
250+0.6 EUR
500+0.54 EUR
1000+0.5 EUR
2000+0.46 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IRF7416TRPBF irf7416qpbf.pdf
IRF7416TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
90+0.8 EUR
102+0.7 EUR
122+0.59 EUR
250+0.52 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210PBF irf5210.pdf
IRF5210PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.12µC
On-state resistance: 60mΩ
Gate-source voltage: ±20V
auf Bestellung 1279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
38+1.89 EUR
42+1.72 EUR
50+1.57 EUR
100+1.46 EUR
500+1.2 EUR
1000+1.12 EUR
1250+1.09 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210STRLPBF irf5210spbf.pdf
IRF5210STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.72 EUR
26+2.77 EUR
31+2.33 EUR
100+1.94 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210STRRPBF irf5210spbf.pdf
IRF5210STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -40A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -40A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE2QR0665XKLA1 Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab
ICE2QR0665XKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP8; 10.5÷24VDC; SMPS; Ubr: 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Frequency: 39...65kHz
Operating voltage: 10.5...24V DC
Application: SMPS
Breakdown voltage: 650V
Input voltage: 85...265V
Topology: flyback
auf Bestellung 2078 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.75 EUR
32+2.27 EUR
35+2.06 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IR4427PBF description IR4427PBF.pdf
IR4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
37+1.96 EUR
40+1.82 EUR
50+1.79 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
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