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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4 Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
290+0.25 EUR
485+0.15 EUR
530+0.14 EUR
605+0.12 EUR
Mindestbestellmenge: 290
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BAR6405WH6327XTSA1 BAR6405WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4 Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT323
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
391+0.18 EUR
447+0.16 EUR
468+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 334
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IRFZ46NLPBF IRFZ46NLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055F6F1A6F5005056AB5A8F&compId=irfz46ns.pdf?ci_sign=823535b9df98d9e91cdfca84dfbe6e3ff87b06ed description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
54+1.33 EUR
65+1.1 EUR
72+1 EUR
Mindestbestellmenge: 50
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IRFZ46NPBF IRFZ46NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055FDF1A6F5005056AB5A8F&compId=irfz46n.pdf?ci_sign=93c1971f002e2dd0aa19b059e611e1bf772c02d6 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
89+0.8 EUR
102+0.7 EUR
113+0.63 EUR
126+0.57 EUR
Mindestbestellmenge: 71
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IRFI1310NPBF IRFI1310NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284B41F1A6F5005056AB5A8F&compId=irfi1310n.pdf?ci_sign=01e2e2c9f0e71c2ff0c5bc018c7724f0acccbe52 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.2 EUR
35+2.09 EUR
36+1.99 EUR
Mindestbestellmenge: 33
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IRFI4229PBF IRFI4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BCFC8A0360F1A303005056AB0C4F&compId=irfi4229pbf.pdf?ci_sign=699c0e908f3c6258718e35df6f7280386d6cc0c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFI4321PBF IRFI4321PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BD193BBC93F1A303005056AB0C4F&compId=irfi4321pbf.pdf?ci_sign=2ea90ea7929f7e7a1e92a7b4d5c46e524d83b7f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 46W
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.22 EUR
Mindestbestellmenge: 33
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IRFI4410ZPBF IRFI4410ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBE67CFBAE00143&compId=IRFI4410ZPBF.pdf?ci_sign=2106fa9c0773cda6f12da043fee65f032dcce0d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Kind of package: tube
On-state resistance: 9.3mΩ
Gate-source voltage: ±30V
Drain current: 30A
Power dissipation: 47W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 81nC
Case: TO220FP
auf Bestellung 995 Stücke:
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28+2.59 EUR
33+2.2 EUR
50+2.09 EUR
Mindestbestellmenge: 28
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IRFI530NPBF IRFI530NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA25F1A6F5005056AB5A8F&compId=irfi530n.pdf?ci_sign=f4dea01463a1c9e7fa5fd95d1b7accd595ebd817 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
70+1.03 EUR
78+0.92 EUR
100+0.87 EUR
Mindestbestellmenge: 35
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IRFI540NPBF IRFI540NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA2CF1A6F5005056AB5A8F&compId=irfi540n.pdf?ci_sign=a8e11751173571fb7cd4435d05e530054609bd50 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
52+1.4 EUR
60+1.2 EUR
Mindestbestellmenge: 41
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IPB033N10N5LF IPB033N10N5LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CE0FB9307C8749&compId=IPB033N10N5LF.pdf?ci_sign=8b84caa81adb999660a947a742bfb25f2bb555c1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPD031N03LGATMA1 IPD031N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F316ADF575611C&compId=IPD031N03LG-DTE.pdf?ci_sign=44aace7bc3066b2eb9d2220bfd76a10eefb1118b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2886 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
81+0.89 EUR
91+0.79 EUR
102+0.7 EUR
500+0.66 EUR
Mindestbestellmenge: 73
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IPD034N06N3GATMA1 IPD034N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BABC34B7B3E11C&compId=IPD034N06N3G-DTE.pdf?ci_sign=3395175fdad7c29d5693c15a03df835870be8966 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.55 EUR
36+2.02 EUR
41+1.76 EUR
55+1.32 EUR
100+1.29 EUR
Mindestbestellmenge: 29
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IPD075N03LGATMA1 IPD075N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F32ECE512BE11C&compId=IPD075N03LG-DTE.pdf?ci_sign=0043c8fce757839b3a1d71add383451290e8ae9e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2445 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
194+0.37 EUR
Mindestbestellmenge: 167
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IPD135N03LGATMA1 IPD135N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F339715B71211C&compId=IPD135N03LG-DTE.pdf?ci_sign=68054a3fac3564e33e44811ddec17420b0dc86f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 782 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
165+0.43 EUR
174+0.41 EUR
Mindestbestellmenge: 148
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IRF8736TRPBF IRF8736TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE837B9ABBF1A303005056AB0C4F&compId=irf8736pbf.pdf?ci_sign=9f437ccc0e59342b4111934b0de47bb61ce0fc80 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2HS01GXUMA1 ICE2HS01GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39087F58AA259&compId=ICE2HS01G.pdf?ci_sign=57971471c0680ec692093ffb8daf73882b579381 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Output current: 6mA
Produkt ist nicht verfügbar
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IR2112PBF IR2112PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3404F1A6F5005056AB5A8F&compId=ir2112.pdf?ci_sign=595bac11ed51c7b446cca90d7246aae6dbde8538 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.5 EUR
21+3.42 EUR
25+3.17 EUR
50+3.03 EUR
Mindestbestellmenge: 16
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IR2112SPBF IR2112SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3404F1A6F5005056AB5A8F&compId=ir2112.pdf?ci_sign=595bac11ed51c7b446cca90d7246aae6dbde8538 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.76 EUR
Mindestbestellmenge: 26
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IR2112STRPBF IR2112STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC156B99E195EA&compId=IR2112STRPBF.pdf?ci_sign=fff1ad2fc5e660ca130ec2d8a3d9c46d23cf73c8 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
auf Bestellung 747 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.89 EUR
34+2.14 EUR
35+2.06 EUR
Mindestbestellmenge: 25
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IRFR4105TRPBF IRFR4105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C465AA47CCF1A303005056AB0C4F&compId=irfr4105pbf.pdf?ci_sign=383d4ac08d29205f1256913d405aa1154b66cd24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR4105ZTRL AUIRFR4105ZTRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04594540E09F1A6F5005056AB5A8F&compId=auirfr4105.pdf?ci_sign=6b0de7a9edec38bdda26e5eb1b5e027f4166a6da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2121PBF IR2121PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3435F1A6F5005056AB5A8F&compId=ir2121.pdf?ci_sign=4d77a02a8631da77342e11256952e1a66283c551 Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.76 EUR
28+2.57 EUR
Mindestbestellmenge: 26
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2ED020I12-FI 2ED020I12-FI INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C03E1F002831F1A6F5005056AB5A8F&compId=10027685.pdf?ci_sign=1ab77e8c2d7501fb50ace795d6564c2952906e00 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -2...1A
Mounting: SMD
Number of channels: 2
Case: PG-DSO-18
Supply voltage: 0...5V; 14...18V
Kind of package: reel; tape
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: IGBT half-bridge
Protection: undervoltage UVP
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.99 EUR
22+3.32 EUR
25+3.03 EUR
100+2.65 EUR
250+2.39 EUR
Mindestbestellmenge: 15
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IKQ75N120CH3XKSA1 IKQ75N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2B012CAA49F6749&compId=IKQ75N120CH3.pdf?ci_sign=e914df17ff7ca938dbbe26bac7072d720567b44d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Produkt ist nicht verfügbar
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IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE986B09007A649B8BF&compId=IKQ75N120CS6XKSA1.pdf?ci_sign=da4429176011a05079a0b9331dca0f7487332609 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.88 EUR
10+8.17 EUR
30+7.61 EUR
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IKQ75N120CT2XKSA1 IKQ75N120CT2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD9D0DB3C2749&compId=IKQ75N120CT2.pdf?ci_sign=0547d472e8cc63063fbb86787a5014befe4e4eea Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 237W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
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IKY75N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF32EF40E8F3820&compId=IKY75N120CH3.pdf?ci_sign=88a902c54bc1c0842a5325041056e533d46c617e Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Mounting: THT
Manufacturer series: H3
Kind of package: tube
Turn-on time: 70ns
Gate charge: 0.37µC
Turn-off time: 335ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
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IKY75N120CS6XKSA1 IKY75N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0ACA311F3D8BF&compId=IKY75N120CS6.pdf?ci_sign=517ad18d7abb7b0f17daf362f1db5b2889eba0e3 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Produkt ist nicht verfügbar
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BTS4140N BTS4140N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E4633D744469&compId=BTS4140N.pdf?ci_sign=5e474e1a89c00f803a10d92fc322e39aa4180b9e Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 4.9...60V DC
On-state resistance: 1Ω
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 1614 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
53+1.36 EUR
60+1.2 EUR
100+1.09 EUR
500+1.06 EUR
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IRFB3006PBF IRFB3006PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6AAF1A6F5005056AB5A8F&compId=irfb3006pbf.pdf?ci_sign=af7f6f1ff8f7a54d3a732ebdbab42c7601952b23 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 204 Stücke:
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26+2.77 EUR
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IPA032N06N3GXKSA1 IPA032N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99C743C5DE11C&compId=IPA032N06N3G-DTE.pdf?ci_sign=b6736c10eb5920ad8ce93c1b17bc3994112976c6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IM69D120V01XTSA1 IM69D120V01XTSA1 INFINEON TECHNOLOGIES IM69D120.pdf Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
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IM69D130V01XTSA1 IM69D130V01XTSA1 INFINEON TECHNOLOGIES IM69D130.pdf Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Produkt ist nicht verfügbar
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IRLU120NPBF IRLU120NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227DC6E36566F1A303005056AB0C4F&compId=irlr120npbf.pdf?ci_sign=86901e93310b5239412647addcb5f48867ee4e34 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 0.185Ω
Gate-source voltage: ±16V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
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IRLU3110ZPBF IRLU3110ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E95506BE0F1A6F5005056AB5A8F&compId=irlr3110zpbf.pdf?ci_sign=345190505f871965a8ce7cc3f8e02af74e6a3a8f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 34nC
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IRLU3410PBF IRLU3410PBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Case: IPAK
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Power dissipation: 52W
Drain current: 15A
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
70+1.03 EUR
Mindestbestellmenge: 51
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IRFB4410PBF IRFB4410PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A61F1A6F5005056AB5A8F&compId=irfs4410.pdf?ci_sign=7c5f492f325e1029f7935d9e50a854b0b56bff5f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
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27+2.66 EUR
43+1.66 EUR
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IRFB4410ZPBF IRFB4410ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A68F1A6F5005056AB5A8F&compId=irfb4410zpbf.pdf?ci_sign=a2eb2dffb8f0130fe236daaa55b1a2a68f3cccae description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.16 EUR
37+1.97 EUR
49+1.47 EUR
56+1.29 EUR
66+1.09 EUR
100+0.99 EUR
200+0.89 EUR
500+0.82 EUR
Mindestbestellmenge: 34
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IRFR3710ZTRPBF IRFR3710ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD055E8472B5EA&compId=IRFR3710ZTRPBF.pdf?ci_sign=7d07f7aee92f768313c1b0b456a26a45cfb77b9d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 140W
Drain current: 56A
auf Bestellung 1627 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.97 EUR
44+1.65 EUR
49+1.48 EUR
57+1.26 EUR
65+1.12 EUR
100+1 EUR
250+0.87 EUR
500+0.79 EUR
1000+0.73 EUR
Mindestbestellmenge: 37
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SPA15N60C3XKSA1 SPA15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.73 EUR
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AIHD15N60RATMA1 AIHD15N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA62BF3FDC1820&compId=AIHD15N60R.pdf?ci_sign=1030122affd7dc3ad569ab50afc6205a19c2f6a1 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 26ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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AIHD15N60RFATMA1 AIHD15N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA66FDB7EC1820&compId=AIHD15N60RF.pdf?ci_sign=ca42b879f16dea63ab2fd70290170f430052ad65 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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IRF2204PBF IRF2204PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5F1455BF3EF1A303005056AB0C4F&compId=irf2204pbf.pdf?ci_sign=9507b4eec742854faae9ef3d2df5d9f06c7206bc description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 22 Stücke:
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22+3.25 EUR
Mindestbestellmenge: 22
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DZ1070N22K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. load current: 1.1kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
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DZ1070N26K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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IPN80R1K4P7ATMA1 IPN80R1K4P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE4360D764D3D1&compId=IPN80R1K4P7.pdf?ci_sign=78fb10d99a14536f832bfbd20390774725556ad0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.4Ω
Drain current: 2.7A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2827 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
83+0.86 EUR
125+0.57 EUR
500+0.46 EUR
Mindestbestellmenge: 62
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BTS4142N BTS4142N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E84A11A0A469&compId=BTS4142N.pdf?ci_sign=3244447680817f5f79474ea635215c847d786be5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 12...45V DC
On-state resistance: 0.15Ω
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
28+2.6 EUR
40+2.2 EUR
80+2.03 EUR
100+1.96 EUR
250+1.74 EUR
Mindestbestellmenge: 20
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IHW30N135R5XKSA1 IHW30N135R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA3259EB0638BF&compId=IHW30N135R5.pdf?ci_sign=39630b0ae55cb15d14870d0c776223ecce32001c Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
25+2.86 EUR
30+2.55 EUR
120+2.32 EUR
Mindestbestellmenge: 23
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BGS14MPA9E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC3E00A48B598BF&compId=BGS14MPA9E6327.pdf?ci_sign=c88d71efadde560d8c82b717917bce5aae918cc5 Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Type of integrated circuit: RF switch
Output configuration: SP4T
Produkt ist nicht verfügbar
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BSP76E6433 BSP76E6433 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975D357543C469&compId=BSP76E6433.pdf?ci_sign=ee41e26ebfd9d7f22ffc4ce630ef54f3ab400fc4 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Output current: 1.4A
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Number of channels: 1
Output voltage: 42V
Case: PG-SOT223-4
Type of integrated circuit: power switch
auf Bestellung 3994 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
67+1.07 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 49
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IPB027N10N3GATMA1 IPB027N10N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAA980C7A9211C&compId=IPB027N10N3G-DTE.pdf?ci_sign=65d103be878610d0403d27ac03d097367864db37 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB027N10N5ATMA1 IPB027N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAAD6EAF5D211C&compId=IPB027N10N5-dte.pdf?ci_sign=46af40089252f374dc025d2954c3bc66941cc2cd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRLR3636TRPBF IRLR3636TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF11D881CECD5EA&compId=IRLR3636TRPBF.pdf?ci_sign=b6220a740730b6ab7b23975b33855f69170c505b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1146 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
51+1.43 EUR
58+1.25 EUR
66+1.09 EUR
100+0.95 EUR
250+0.82 EUR
500+0.76 EUR
Mindestbestellmenge: 45
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BTS6163D BTS6163D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE5FC44976A0FA8&compId=BTS6163D-DTE.pdf?ci_sign=9d33c8266458148b300f88bc2036db936d9aeb6f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Mounting: SMD
Number of channels: 1
Case: PG-TO252-5-11
Supply voltage: 5.5...62V DC
On-state resistance: 20mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 1529 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.23 EUR
17+4.42 EUR
100+3.73 EUR
Mindestbestellmenge: 12
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BTS441RG BTS441RG INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C19A98E98469&compId=BTS441RG.pdf?ci_sign=e61366597abf2906cf65152ad268807663a7c035 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.86 EUR
17+4.29 EUR
25+3.85 EUR
100+3.65 EUR
Mindestbestellmenge: 15
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BTS716GXUMA1 BTS716GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889EF308CE2FAF3D1&compId=BTS716G.pdf?ci_sign=b81448f0354de497b5d1a10935734c50374a9d3c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SO20
Turn-off time: 0.25ms
Turn-on time: 270µs
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Output current: 2.6...5.3A
Power dissipation: 3.6W
Number of channels: 4
Technology: Classic PROFET
Mounting: SMD
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.03 EUR
22+3.27 EUR
25+3.12 EUR
Mindestbestellmenge: 18
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BTS4175SGA BTS4175SGA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697EA36E40F0469&compId=BTS4175SGA.pdf?ci_sign=b4727641779625566a455f41863bca8a403915c1 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IRFR5410TRPBF IRFR5410TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1940 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.7 EUR
62+1.16 EUR
71+1.01 EUR
100+0.83 EUR
250+0.73 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 43
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BAR6402VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
290+0.25 EUR
485+0.15 EUR
530+0.14 EUR
605+0.12 EUR
Mindestbestellmenge: 290
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BAR6405WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4
BAR6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT323
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
391+0.18 EUR
447+0.16 EUR
468+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 334
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IRFZ46NLPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D5055F6F1A6F5005056AB5A8F&compId=irfz46ns.pdf?ci_sign=823535b9df98d9e91cdfca84dfbe6e3ff87b06ed
IRFZ46NLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
54+1.33 EUR
65+1.1 EUR
72+1 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ46NPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D5055FDF1A6F5005056AB5A8F&compId=irfz46n.pdf?ci_sign=93c1971f002e2dd0aa19b059e611e1bf772c02d6
IRFZ46NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
89+0.8 EUR
102+0.7 EUR
113+0.63 EUR
126+0.57 EUR
Mindestbestellmenge: 71
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IRFI1310NPBF pVersion=0046&contRep=ZT&docId=E1C04E5F284B41F1A6F5005056AB5A8F&compId=irfi1310n.pdf?ci_sign=01e2e2c9f0e71c2ff0c5bc018c7724f0acccbe52
IRFI1310NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
35+2.09 EUR
36+1.99 EUR
Mindestbestellmenge: 33
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IRFI4229PBF pVersion=0046&contRep=ZT&docId=E221BCFC8A0360F1A303005056AB0C4F&compId=irfi4229pbf.pdf?ci_sign=699c0e908f3c6258718e35df6f7280386d6cc0c8
IRFI4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4321PBF pVersion=0046&contRep=ZT&docId=E221BD193BBC93F1A303005056AB0C4F&compId=irfi4321pbf.pdf?ci_sign=2ea90ea7929f7e7a1e92a7b4d5c46e524d83b7f1
IRFI4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 46W
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.22 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4410ZPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBE67CFBAE00143&compId=IRFI4410ZPBF.pdf?ci_sign=2106fa9c0773cda6f12da043fee65f032dcce0d2
IRFI4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Kind of package: tube
On-state resistance: 9.3mΩ
Gate-source voltage: ±30V
Drain current: 30A
Power dissipation: 47W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 81nC
Case: TO220FP
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.59 EUR
33+2.2 EUR
50+2.09 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRFI530NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA25F1A6F5005056AB5A8F&compId=irfi530n.pdf?ci_sign=f4dea01463a1c9e7fa5fd95d1b7accd595ebd817
IRFI530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
70+1.03 EUR
78+0.92 EUR
100+0.87 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRFI540NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA2CF1A6F5005056AB5A8F&compId=irfi540n.pdf?ci_sign=a8e11751173571fb7cd4435d05e530054609bd50
IRFI540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
52+1.4 EUR
60+1.2 EUR
Mindestbestellmenge: 41
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IPB033N10N5LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CE0FB9307C8749&compId=IPB033N10N5LF.pdf?ci_sign=8b84caa81adb999660a947a742bfb25f2bb555c1
IPB033N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPD031N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F316ADF575611C&compId=IPD031N03LG-DTE.pdf?ci_sign=44aace7bc3066b2eb9d2220bfd76a10eefb1118b
IPD031N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2886 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
81+0.89 EUR
91+0.79 EUR
102+0.7 EUR
500+0.66 EUR
Mindestbestellmenge: 73
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IPD034N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BABC34B7B3E11C&compId=IPD034N06N3G-DTE.pdf?ci_sign=3395175fdad7c29d5693c15a03df835870be8966
IPD034N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
36+2.02 EUR
41+1.76 EUR
55+1.32 EUR
100+1.29 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IPD075N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F32ECE512BE11C&compId=IPD075N03LG-DTE.pdf?ci_sign=0043c8fce757839b3a1d71add383451290e8ae9e
IPD075N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2445 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
194+0.37 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IPD135N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F339715B71211C&compId=IPD135N03LG-DTE.pdf?ci_sign=68054a3fac3564e33e44811ddec17420b0dc86f2
IPD135N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 782 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
165+0.43 EUR
174+0.41 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
IRF8736TRPBF pVersion=0046&contRep=ZT&docId=E221AE837B9ABBF1A303005056AB0C4F&compId=irf8736pbf.pdf?ci_sign=9f437ccc0e59342b4111934b0de47bb61ce0fc80
IRF8736TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE2HS01GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39087F58AA259&compId=ICE2HS01G.pdf?ci_sign=57971471c0680ec692093ffb8daf73882b579381
ICE2HS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Output current: 6mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2112PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3404F1A6F5005056AB5A8F&compId=ir2112.pdf?ci_sign=595bac11ed51c7b446cca90d7246aae6dbde8538
IR2112PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.5 EUR
21+3.42 EUR
25+3.17 EUR
50+3.03 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR2112SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3404F1A6F5005056AB5A8F&compId=ir2112.pdf?ci_sign=595bac11ed51c7b446cca90d7246aae6dbde8538
IR2112SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
Mindestbestellmenge: 26
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IR2112STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC156B99E195EA&compId=IR2112STRPBF.pdf?ci_sign=fff1ad2fc5e660ca130ec2d8a3d9c46d23cf73c8
IR2112STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
auf Bestellung 747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
34+2.14 EUR
35+2.06 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4105TRPBF pVersion=0046&contRep=ZT&docId=E221C465AA47CCF1A303005056AB0C4F&compId=irfr4105pbf.pdf?ci_sign=383d4ac08d29205f1256913d405aa1154b66cd24
IRFR4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR4105ZTRL pVersion=0046&contRep=ZT&docId=E1C04594540E09F1A6F5005056AB5A8F&compId=auirfr4105.pdf?ci_sign=6b0de7a9edec38bdda26e5eb1b5e027f4166a6da
AUIRFR4105ZTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2121PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3435F1A6F5005056AB5A8F&compId=ir2121.pdf?ci_sign=4d77a02a8631da77342e11256952e1a66283c551
IR2121PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
28+2.57 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
2ED020I12-FI pVersion=0046&contRep=ZT&docId=E1C03E1F002831F1A6F5005056AB5A8F&compId=10027685.pdf?ci_sign=1ab77e8c2d7501fb50ace795d6564c2952906e00
2ED020I12-FI
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -2...1A
Mounting: SMD
Number of channels: 2
Case: PG-DSO-18
Supply voltage: 0...5V; 14...18V
Kind of package: reel; tape
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: IGBT half-bridge
Protection: undervoltage UVP
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.99 EUR
22+3.32 EUR
25+3.03 EUR
100+2.65 EUR
250+2.39 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2B012CAA49F6749&compId=IKQ75N120CH3.pdf?ci_sign=e914df17ff7ca938dbbe26bac7072d720567b44d
IKQ75N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Produkt ist nicht verfügbar
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IKQ75N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE986B09007A649B8BF&compId=IKQ75N120CS6XKSA1.pdf?ci_sign=da4429176011a05079a0b9331dca0f7487332609
IKQ75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.88 EUR
10+8.17 EUR
30+7.61 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IKQ75N120CT2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD9D0DB3C2749&compId=IKQ75N120CT2.pdf?ci_sign=0547d472e8cc63063fbb86787a5014befe4e4eea
IKQ75N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 237W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Produkt ist nicht verfügbar
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IKY75N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF32EF40E8F3820&compId=IKY75N120CH3.pdf?ci_sign=88a902c54bc1c0842a5325041056e533d46c617e
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Mounting: THT
Manufacturer series: H3
Kind of package: tube
Turn-on time: 70ns
Gate charge: 0.37µC
Turn-off time: 335ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Produkt ist nicht verfügbar
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IKY75N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0ACA311F3D8BF&compId=IKY75N120CS6.pdf?ci_sign=517ad18d7abb7b0f17daf362f1db5b2889eba0e3
IKY75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Produkt ist nicht verfügbar
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BTS4140N pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E4633D744469&compId=BTS4140N.pdf?ci_sign=5e474e1a89c00f803a10d92fc322e39aa4180b9e
BTS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 4.9...60V DC
On-state resistance: 1Ω
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 1614 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
53+1.36 EUR
60+1.2 EUR
100+1.09 EUR
500+1.06 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3006PBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B6AAF1A6F5005056AB5A8F&compId=irfb3006pbf.pdf?ci_sign=af7f6f1ff8f7a54d3a732ebdbab42c7601952b23
IRFB3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
Mindestbestellmenge: 26
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IPA032N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99C743C5DE11C&compId=IPA032N06N3G-DTE.pdf?ci_sign=b6736c10eb5920ad8ce93c1b17bc3994112976c6
IPA032N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IM69D120V01XTSA1 IM69D120.pdf
IM69D120V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 IM69D130.pdf
IM69D130V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU120NPBF description pVersion=0046&contRep=ZT&docId=E2227DC6E36566F1A303005056AB0C4F&compId=irlr120npbf.pdf?ci_sign=86901e93310b5239412647addcb5f48867ee4e34
IRLU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 0.185Ω
Gate-source voltage: ±16V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3110ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E95506BE0F1A6F5005056AB5A8F&compId=irlr3110zpbf.pdf?ci_sign=345190505f871965a8ce7cc3f8e02af74e6a3a8f
IRLU3110ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 34nC
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3410PBF irlr3410pbf.pdf
IRLU3410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Case: IPAK
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Power dissipation: 52W
Drain current: 15A
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
70+1.03 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4410PBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284A61F1A6F5005056AB5A8F&compId=irfs4410.pdf?ci_sign=7c5f492f325e1029f7935d9e50a854b0b56bff5f
IRFB4410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
43+1.66 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4410ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284A68F1A6F5005056AB5A8F&compId=irfb4410zpbf.pdf?ci_sign=a2eb2dffb8f0130fe236daaa55b1a2a68f3cccae
IRFB4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
37+1.97 EUR
49+1.47 EUR
56+1.29 EUR
66+1.09 EUR
100+0.99 EUR
200+0.89 EUR
500+0.82 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3710ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD055E8472B5EA&compId=IRFR3710ZTRPBF.pdf?ci_sign=7d07f7aee92f768313c1b0b456a26a45cfb77b9d
IRFR3710ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 140W
Drain current: 56A
auf Bestellung 1627 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
44+1.65 EUR
49+1.48 EUR
57+1.26 EUR
65+1.12 EUR
100+1 EUR
250+0.87 EUR
500+0.79 EUR
1000+0.73 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
SPA15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
SPA15N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
AIHD15N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA62BF3FDC1820&compId=AIHD15N60R.pdf?ci_sign=1030122affd7dc3ad569ab50afc6205a19c2f6a1
AIHD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 26ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIHD15N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA66FDB7EC1820&compId=AIHD15N60RF.pdf?ci_sign=ca42b879f16dea63ab2fd70290170f430052ad65
AIHD15N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IRF2204PBF description pVersion=0046&contRep=ZT&docId=E21F5F1455BF3EF1A303005056AB0C4F&compId=irf2204pbf.pdf?ci_sign=9507b4eec742854faae9ef3d2df5d9f06c7206bc
IRF2204PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
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DZ1070N22K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. load current: 1.1kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N26K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ1070N28K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R1K4P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE4360D764D3D1&compId=IPN80R1K4P7.pdf?ci_sign=78fb10d99a14536f832bfbd20390774725556ad0
IPN80R1K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.4Ω
Drain current: 2.7A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2827 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
83+0.86 EUR
125+0.57 EUR
500+0.46 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
BTS4142N pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E84A11A0A469&compId=BTS4142N.pdf?ci_sign=3244447680817f5f79474ea635215c847d786be5
BTS4142N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 12...45V DC
On-state resistance: 0.15Ω
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
28+2.6 EUR
40+2.2 EUR
80+2.03 EUR
100+1.96 EUR
250+1.74 EUR
Mindestbestellmenge: 20
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IHW30N135R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA3259EB0638BF&compId=IHW30N135R5.pdf?ci_sign=39630b0ae55cb15d14870d0c776223ecce32001c
IHW30N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
25+2.86 EUR
30+2.55 EUR
120+2.32 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
BGS14MPA9E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC3E00A48B598BF&compId=BGS14MPA9E6327.pdf?ci_sign=c88d71efadde560d8c82b717917bce5aae918cc5
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Type of integrated circuit: RF switch
Output configuration: SP4T
Produkt ist nicht verfügbar
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BSP76E6433 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975D357543C469&compId=BSP76E6433.pdf?ci_sign=ee41e26ebfd9d7f22ffc4ce630ef54f3ab400fc4
BSP76E6433
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Output current: 1.4A
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Number of channels: 1
Output voltage: 42V
Case: PG-SOT223-4
Type of integrated circuit: power switch
auf Bestellung 3994 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
67+1.07 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 49
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IPB027N10N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAA980C7A9211C&compId=IPB027N10N3G-DTE.pdf?ci_sign=65d103be878610d0403d27ac03d097367864db37
IPB027N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB027N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAAD6EAF5D211C&compId=IPB027N10N5-dte.pdf?ci_sign=46af40089252f374dc025d2954c3bc66941cc2cd
IPB027N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3636TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF11D881CECD5EA&compId=IRLR3636TRPBF.pdf?ci_sign=b6220a740730b6ab7b23975b33855f69170c505b
IRLR3636TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
51+1.43 EUR
58+1.25 EUR
66+1.09 EUR
100+0.95 EUR
250+0.82 EUR
500+0.76 EUR
Mindestbestellmenge: 45
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BTS6163D pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE5FC44976A0FA8&compId=BTS6163D-DTE.pdf?ci_sign=9d33c8266458148b300f88bc2036db936d9aeb6f
BTS6163D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Mounting: SMD
Number of channels: 1
Case: PG-TO252-5-11
Supply voltage: 5.5...62V DC
On-state resistance: 20mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 1529 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
17+4.42 EUR
100+3.73 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
BTS441RG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C19A98E98469&compId=BTS441RG.pdf?ci_sign=e61366597abf2906cf65152ad268807663a7c035
BTS441RG
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
17+4.29 EUR
25+3.85 EUR
100+3.65 EUR
Mindestbestellmenge: 15
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BTS716GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889EF308CE2FAF3D1&compId=BTS716G.pdf?ci_sign=b81448f0354de497b5d1a10935734c50374a9d3c
BTS716GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SO20
Turn-off time: 0.25ms
Turn-on time: 270µs
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Output current: 2.6...5.3A
Power dissipation: 3.6W
Number of channels: 4
Technology: Classic PROFET
Mounting: SMD
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
22+3.27 EUR
25+3.12 EUR
Mindestbestellmenge: 18
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BTS4175SGA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697EA36E40F0469&compId=BTS4175SGA.pdf?ci_sign=b4727641779625566a455f41863bca8a403915c1
BTS4175SGA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IRFR5410TRPBF description pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831
IRFR5410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
62+1.16 EUR
71+1.01 EUR
100+0.83 EUR
250+0.73 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
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