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IR2118PBF IR2118PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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S29AL008J55BFIR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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S29AL008J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55BFIR22 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFIR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFNR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFNR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BAN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29AL008J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29AL008J70BFI022 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFM023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFN010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFI023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFN010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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SPD30P06PGBTMA1 SPD30P06PGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D8893CBA51CC&compId=SPD30P06PGBTMA1-DTE.pdf?ci_sign=1336cadb1b80dbd9173ab792431c3392d8afa7d0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Case: PG-TO252-3
Drain-source voltage: -60V
Drain current: -30A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 1599 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
47+1.53 EUR
66+1.09 EUR
70+1.03 EUR
250+0.99 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BAS7007E6327 BAS7007E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
262+0.27 EUR
391+0.18 EUR
633+0.11 EUR
Mindestbestellmenge: 200
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IRLR3410TRLPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FF300R12KS4 FF300R12KS4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9345B52A7BD1CC&compId=FF300R12KS4-dte.pdf?ci_sign=915a25c84faf5048f01515fc4bae1ba7d52cac62 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
1+259.72 EUR
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IRFSL3207ZPBF IRFSL3207ZPBF INFINEON TECHNOLOGIES irfs3207zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC120N03LSGATMA1 BSC120N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA054235A211C&compId=BSC120N03LSG-DTE.pdf?ci_sign=946238703efb8cfb797f73bad01e4f824095455e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC120N03MSGATMA1 BSC120N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA2C2B695E11C&compId=BSC120N03MSG-DTE.pdf?ci_sign=1534942e68b54aa8c7996b16f304df746fc732c3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BCX41E6327 BCX41E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61FB8EFEF35EA&compId=BCX41.pdf?ci_sign=88a196f359f0852bc6b8b0beaffb5759891cb7d5 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
auf Bestellung 831 Stücke:
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239+0.30 EUR
319+0.22 EUR
486+0.15 EUR
667+0.11 EUR
705+0.10 EUR
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BAS170WE6327HTSA1 BAS170WE6327HTSA1 INFINEON TECHNOLOGIES BAS170WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Mounting: SMD
auf Bestellung 3038 Stücke:
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377+0.19 EUR
466+0.15 EUR
560+0.13 EUR
889+0.08 EUR
939+0.08 EUR
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BFP193WH6327 BFP193WH6327 INFINEON TECHNOLOGIES BFP193WH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
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IPP60R160P6XKSA1 IPP60R160P6XKSA1 INFINEON TECHNOLOGIES IPP60R160P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
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IPP60R160C6XKSA1 IPP60R160C6XKSA1 INFINEON TECHNOLOGIES IPP60R160C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB80N06S405ATMA2 INFINEON TECHNOLOGIES Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS159NH6327XTSA2 BSS159NH6327XTSA2 INFINEON TECHNOLOGIES BSS159NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 1451 Stücke:
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179+0.40 EUR
250+0.29 EUR
417+0.17 EUR
443+0.16 EUR
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IRF7465TRPBF IRF7465TRPBF INFINEON TECHNOLOGIES irf7465pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
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CY7C1520KV18-333BZXI INFINEON TECHNOLOGIES Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
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IPA65R110CFDXKSA1 IPA65R110CFDXKSA1 INFINEON TECHNOLOGIES IPA65R110CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 34.7W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220FP
Produkt ist nicht verfügbar
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IPI65R110CFDXKSA1 IPI65R110CFDXKSA1 INFINEON TECHNOLOGIES IPI65R110CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO262-3
Produkt ist nicht verfügbar
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IPP65R110CFDXKSA1 IPP65R110CFDXKSA1 INFINEON TECHNOLOGIES IPP65R110CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPG20N04S408ATMA1 IPG20N04S408ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57AA149F9E143&compId=IPG20N04S408.pdf?ci_sign=8fef4a4a90eb99a19b047330a14f6402e403fdee Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 65W
Polarisation: unipolar
Gate charge: 28nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57E4A02E10143&compId=IPG20N04S409.pdf?ci_sign=c4432906d78c25f5effc1e82352607614ab5fbf0 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 21.7nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPG20N04S4L11ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N04S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf644b016c14 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 11.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TDSON-8-4
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IR2114SSPBF IR2114SSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Operating temperature: -40...125°C
Case: SSOP24
Power: 1.5W
Supply voltage: 10.4...20V DC
Turn-on time: 440ns
Turn-off time: 440ns
Output current: -1.5...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge
Voltage class: 0.6/1.2kV
Mounting: SMD
auf Bestellung 30 Stücke:
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6+12.36 EUR
8+8.94 EUR
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FB30R06W1E3BOMA1 FB30R06W1E3BOMA1 INFINEON TECHNOLOGIES FB30R06W1E3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
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FP30R06KE3BPSA1 INFINEON TECHNOLOGIES FP30R06KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
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BFP520H6327XTSA1 BFP520H6327XTSA1 INFINEON TECHNOLOGIES BFP520.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
auf Bestellung 2086 Stücke:
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171+0.42 EUR
243+0.29 EUR
317+0.23 EUR
336+0.21 EUR
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IPP072N10N3GXKSA1 IPP072N10N3GXKSA1 INFINEON TECHNOLOGIES IPP072N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BF888H6327XTSA1 BF888H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C0AE7B1158B8BF&compId=BF888.pdf?ci_sign=e176ed99bf95efd6d11d387df59bb310696c35af Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Frequency: 47GHz
Collector-emitter voltage: 4V
Current gain: 250
Collector current: 30mA
Type of transistor: NPN
Power dissipation: 0.16W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
auf Bestellung 2515 Stücke:
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500+0.14 EUR
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IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 2359 Stücke:
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57+1.26 EUR
75+0.96 EUR
80+0.90 EUR
Mindestbestellmenge: 52
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IRFS7530TRLPBF IRFS7530TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Gate charge: 274nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB017N08N5ATMA1 IPB017N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA73AB08EF811C&compId=IPB017N08N5-DTE.pdf?ci_sign=7307f2b75785faf784f6ce903b0ce2fffffbbf9a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCR400WH6327XTSA1 BCR400WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A2EDFC26DD3820&compId=BCR400W.pdf?ci_sign=006cd1b97ef4c09c4e711c708b77bf78b65f7373 Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Mounting: SMD
Case: SOT343
Power: 0.33W
Supply voltage: 1.6...18V DC
auf Bestellung 2880 Stücke:
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209+0.34 EUR
302+0.24 EUR
353+0.20 EUR
428+0.17 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 209
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IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E95E936085211C&compId=IPP034NE7N3G-DTE.pdf?ci_sign=8d0e6de0bd6b07ddb826b41cbddb3eb2f3531bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
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22+3.40 EUR
25+2.95 EUR
26+2.79 EUR
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BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A820D4E7D1F10B&compId=BSS606NH6327XTSA1.pdf?ci_sign=d3e7cbc8506ee2b389230eb6c41319a56a0d32e7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 945 Stücke:
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107+0.67 EUR
157+0.46 EUR
191+0.37 EUR
319+0.22 EUR
338+0.21 EUR
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IPI020N06NAKSA1 IPI020N06NAKSA1 INFINEON TECHNOLOGIES IPI020N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
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IPB017N10N5ATMA1 IPB017N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA789EA0C3611C&compId=IPB017N10N5-DTE.pdf?ci_sign=0831c35b1695eacb56b73ab26680094032011dbd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3036TRL7PP IRLS3036TRL7PP INFINEON TECHNOLOGIES irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Drain-source voltage: 60V
Drain current: 210A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Mounting: SMD
Case: D2PAK-7
auf Bestellung 491 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.33 EUR
19+3.90 EUR
23+3.12 EUR
25+2.95 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1EDF5673FXUMA1 1EDF5673FXUMA1 INFINEON TECHNOLOGIES 1EDF5673F_1EDF5663H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 INFINEON TECHNOLOGIES 1EDI20N12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2118PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55BFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55BFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55BFIR22 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFNR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFNR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BAN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI022 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFM023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFI023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD30P06PGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D8893CBA51CC&compId=SPD30P06PGBTMA1-DTE.pdf?ci_sign=1336cadb1b80dbd9173ab792431c3392d8afa7d0
SPD30P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Case: PG-TO252-3
Drain-source voltage: -60V
Drain current: -30A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 1599 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
47+1.53 EUR
66+1.09 EUR
70+1.03 EUR
250+0.99 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BAS7007E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7007E6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
262+0.27 EUR
391+0.18 EUR
633+0.11 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRLPBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FF300R12KS4 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9345B52A7BD1CC&compId=FF300R12KS4-dte.pdf?ci_sign=915a25c84faf5048f01515fc4bae1ba7d52cac62
FF300R12KS4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+259.72 EUR
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IRFSL3207ZPBF irfs3207zpbf.pdf
IRFSL3207ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC120N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA054235A211C&compId=BSC120N03LSG-DTE.pdf?ci_sign=946238703efb8cfb797f73bad01e4f824095455e
BSC120N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC120N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA2C2B695E11C&compId=BSC120N03MSG-DTE.pdf?ci_sign=1534942e68b54aa8c7996b16f304df746fc732c3
BSC120N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BCX41E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61FB8EFEF35EA&compId=BCX41.pdf?ci_sign=88a196f359f0852bc6b8b0beaffb5759891cb7d5
BCX41E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
auf Bestellung 831 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.30 EUR
319+0.22 EUR
486+0.15 EUR
667+0.11 EUR
705+0.10 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
BAS170WE6327HTSA1 BAS170WE6327HTSA1.pdf
BAS170WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Mounting: SMD
auf Bestellung 3038 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
280+0.26 EUR
377+0.19 EUR
466+0.15 EUR
560+0.13 EUR
889+0.08 EUR
939+0.08 EUR
Mindestbestellmenge: 162
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BFP193WH6327 BFP193WH6327-dte.pdf
BFP193WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Produkt ist nicht verfügbar
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IPP60R160P6XKSA1 IPP60R160P6-DTE.pdf
IPP60R160P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.29 EUR
16+4.68 EUR
18+4.05 EUR
19+3.83 EUR
Mindestbestellmenge: 14
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IPP60R160C6XKSA1 IPP60R160C6-DTE.pdf
IPP60R160C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB80N06S405ATMA2 Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS159NH6327XTSA2 BSS159NH6327XTSA2.pdf
BSS159NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 1451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
250+0.29 EUR
417+0.17 EUR
443+0.16 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
IRF7465TRPBF irf7465pbf.pdf
IRF7465TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1520KV18-333BZXI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
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IPA65R110CFDXKSA1 IPA65R110CFD-DTE.pdf
IPA65R110CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 34.7W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220FP
Produkt ist nicht verfügbar
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IPI65R110CFDXKSA1 IPI65R110CFD-DTE.pdf
IPI65R110CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO262-3
Produkt ist nicht verfügbar
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IPP65R110CFDXKSA1 IPP65R110CFD-DTE.pdf
IPP65R110CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPG20N04S408ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57AA149F9E143&compId=IPG20N04S408.pdf?ci_sign=8fef4a4a90eb99a19b047330a14f6402e403fdee
IPG20N04S408ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 65W
Polarisation: unipolar
Gate charge: 28nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57E4A02E10143&compId=IPG20N04S409.pdf?ci_sign=c4432906d78c25f5effc1e82352607614ab5fbf0
IPG20N04S409ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 21.7nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPG20N04S4L11ATMA1 Infineon-IPG20N04S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf644b016c14
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 11.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TDSON-8-4
Produkt ist nicht verfügbar
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IR2114SSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597
IR2114SSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Operating temperature: -40...125°C
Case: SSOP24
Power: 1.5W
Supply voltage: 10.4...20V DC
Turn-on time: 440ns
Turn-off time: 440ns
Output current: -1.5...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge
Voltage class: 0.6/1.2kV
Mounting: SMD
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.36 EUR
8+8.94 EUR
Mindestbestellmenge: 6
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FB30R06W1E3BOMA1 FB30R06W1E3.pdf
FB30R06W1E3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 FP30R06KE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
Produkt ist nicht verfügbar
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BFP520H6327XTSA1 BFP520.pdf
BFP520H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
auf Bestellung 2086 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
171+0.42 EUR
243+0.29 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
IPP072N10N3GXKSA1 IPP072N10N3G-DTE.pdf
IPP072N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.10 EUR
Mindestbestellmenge: 23
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BF888H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C0AE7B1158B8BF&compId=BF888.pdf?ci_sign=e176ed99bf95efd6d11d387df59bb310696c35af
BF888H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Frequency: 47GHz
Collector-emitter voltage: 4V
Current gain: 250
Collector current: 30mA
Type of transistor: NPN
Power dissipation: 0.16W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
Mindestbestellmenge: 500
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IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 2359 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.40 EUR
57+1.26 EUR
75+0.96 EUR
80+0.90 EUR
Mindestbestellmenge: 52
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IRFS7530TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67
IRFS7530TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Gate charge: 274nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB017N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA73AB08EF811C&compId=IPB017N08N5-DTE.pdf?ci_sign=7307f2b75785faf784f6ce903b0ce2fffffbbf9a
IPB017N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR400WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A2EDFC26DD3820&compId=BCR400W.pdf?ci_sign=006cd1b97ef4c09c4e711c708b77bf78b65f7373
BCR400WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Mounting: SMD
Case: SOT343
Power: 0.33W
Supply voltage: 1.6...18V DC
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
302+0.24 EUR
353+0.20 EUR
428+0.17 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 209
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IPP034NE7N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E95E936085211C&compId=IPP034NE7N3G-DTE.pdf?ci_sign=8d0e6de0bd6b07ddb826b41cbddb3eb2f3531bd6
IPP034NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
22+3.40 EUR
25+2.95 EUR
26+2.79 EUR
Mindestbestellmenge: 19
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BSS606NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A820D4E7D1F10B&compId=BSS606NH6327XTSA1.pdf?ci_sign=d3e7cbc8506ee2b389230eb6c41319a56a0d32e7
BSS606NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
157+0.46 EUR
191+0.37 EUR
319+0.22 EUR
338+0.21 EUR
Mindestbestellmenge: 107
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IPI020N06NAKSA1 IPI020N06N-DTE.pdf
IPI020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB017N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA789EA0C3611C&compId=IPB017N10N5-DTE.pdf?ci_sign=0831c35b1695eacb56b73ab26680094032011dbd
IPB017N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Drain-source voltage: 60V
Drain current: 210A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Mounting: SMD
Case: D2PAK-7
auf Bestellung 491 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.90 EUR
23+3.12 EUR
25+2.95 EUR
Mindestbestellmenge: 17
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1EDF5673FXUMA1 1EDF5673F_1EDF5663H.pdf
1EDF5673FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
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1EDI20N12AFXUMA1 1EDI20N12AF.pdf
1EDI20N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
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