Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149618) > Seite 2467 nach 2494
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IR2118PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -420...200mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 125ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
S29AL008J55BFIR10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Operating temperature: -40...85°C Case: VFBGA48 Operating voltage: 3...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 55ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J55BFIR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Operating temperature: -40...85°C Case: VFBGA48 Operating voltage: 3...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 55ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J55BFIR22 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Operating temperature: -40...85°C Case: VFBGA48 Operating voltage: 3...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 55ns Kind of package: reel; tape Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J55TFIR10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Operating temperature: -40...85°C Case: TSOP48 Operating voltage: 3...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 55ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J55TFIR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Operating temperature: -40...85°C Case: TSOP48 Operating voltage: 3...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 55ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J55TFNR10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Case: TSOP48 Operating voltage: 3...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 55ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J55TFNR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Case: TSOP48 Operating voltage: 3...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 55ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70BAN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Case: VFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70BFI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Case: VFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70BFI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Case: VFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: reel; tape Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70BFI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Case: VFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70BFI022 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Case: VFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: reel; tape Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70BFI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Case: VFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: reel; tape Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70BFM023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Case: VFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Application: automotive Kind of package: reel; tape Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70BFN010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Case: VFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70BFN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Case: VFBGA48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70TFI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Case: TSOP48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: reel; tape Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70TFI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Case: TSOP48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: reel; tape Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70TFN010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Case: TSOP48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29AL008J70TFN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Case: TSOP48 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 70ns Kind of package: in-tray Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SPD30P06PGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3 Case: PG-TO252-3 Drain-source voltage: -60V Drain current: -30A On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 125W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
auf Bestellung 1599 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS7007E6327 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW Case: SOT143 Mounting: SMD Power dissipation: 0.25W Type of diode: Schottky switching Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double independent Max. forward impulse current: 0.1A |
auf Bestellung 2570 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR3410TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of channel: enhancement On-state resistance: 0.105Ω Gate-source voltage: ±16V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FF300R12KS4 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: AG-62MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Power dissipation: 1.95kW Mechanical mounting: screw |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL3207ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC120N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 33A Power dissipation: 28W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC120N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 28W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCX41E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 125V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz |
auf Bestellung 831 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS170WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW Type of diode: Schottky switching Case: SOD323 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward impulse current: 0.1A Power dissipation: 0.25W Mounting: SMD |
auf Bestellung 3038 Stücke: Lieferzeit 14-21 Tag (e) |
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BFP193WH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPP60R160P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R160C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPB80N06S405ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Pulsed drain current: 320A Power dissipation: 107W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSS159NH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 8Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V |
auf Bestellung 1451 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7465TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.9A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2.5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
CY7C1520KV18-333BZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 333MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IPA65R110CFDXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP Mounting: THT Drain-source voltage: 650V Drain current: 31.2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 34.7W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPI65R110CFDXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3 Mounting: THT Drain-source voltage: 650V Drain current: 31.2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 277.8W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO262-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPP65R110CFDXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3 Mounting: THT Drain-source voltage: 650V Drain current: 31.2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 277.8W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO220-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPG20N04S408ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W Drain-source voltage: 40V Drain current: 20A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 65W Polarisation: unipolar Gate charge: 28nC Technology: OptiMOS™ T2 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPG20N04S409ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W Drain-source voltage: 40V Drain current: 20A On-state resistance: 8.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 54W Polarisation: unipolar Gate charge: 21.7nC Technology: OptiMOS™ T2 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPG20N04S4L11ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A Drain-source voltage: 40V Drain current: 20A On-state resistance: 11.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 41W Polarisation: unipolar Technology: OptiMOS™ T2 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 80A Mounting: SMD Case: PG-TDSON-8-4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IR2114SSPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24 Operating temperature: -40...125°C Case: SSOP24 Power: 1.5W Supply voltage: 10.4...20V DC Turn-on time: 440ns Turn-off time: 440ns Output current: -1.5...1A Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge Voltage class: 0.6/1.2kV Mounting: SMD |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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FB30R06W1E3BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 60A Power dissipation: 115W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge Case: AG-EASY1B-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FP30R06KE3BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 60A Application: Inverter Power dissipation: 125W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Case: AG-ECONO2C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BFP520H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343 Type of transistor: NPN Technology: SIEGET™ Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 2.5V Collector current: 40mA Power dissipation: 0.1W Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 45GHz |
auf Bestellung 2086 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP072N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 150W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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BF888H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343 Mounting: SMD Case: SOT343 Frequency: 47GHz Collector-emitter voltage: 4V Current gain: 250 Collector current: 30mA Type of transistor: NPN Power dissipation: 0.16W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: RF |
auf Bestellung 2515 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS21531DSTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -260...180mA Power: 625mW Number of channels: 2 Supply voltage: 10.1...16.8V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality |
auf Bestellung 2359 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS7530TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 295A Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of channel: enhancement Trade name: StrongIRFET On-state resistance: 2mΩ Gate charge: 274nC Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB017N08N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR400WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller Kind of package: reel; tape Type of integrated circuit: driver Integrated circuit features: active bias controller Mounting: SMD Case: SOT343 Power: 0.33W Supply voltage: 1.6...18V DC |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP034NE7N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 100A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Power dissipation: 1W Case: PG-SOT89 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 945 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI020N06NAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB017N10N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 375W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLS3036TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7 Drain-source voltage: 60V Drain current: 210A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 380W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 1kA Mounting: SMD Case: D2PAK-7 |
auf Bestellung 491 Stücke: Lieferzeit 14-21 Tag (e) |
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1EDF5673FXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16 Technology: EiceDRIVER™; GaN Case: PG-DSO-16 Mounting: SMD Kind of package: reel; tape Voltage class: 650V Supply voltage: 3...3.5V; 6.5...20V Output current: -8...4A Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver; high-side Topology: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1EDI20N12AFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8 Technology: EiceDRIVER™; GaN Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Output current: -2...2A Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver; high-side Topology: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IR2118PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55BFIR10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55BFIR20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55BFIR22 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55TFIR10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55TFIR20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55TFNR10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55TFNR20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BAN020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFI010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFI013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFI022 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFI023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFM023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFN010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFN020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70TFI013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29AL008J70TFI023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29AL008J70TFN010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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S29AL008J70TFN020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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SPD30P06PGBTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Case: PG-TO252-3
Drain-source voltage: -60V
Drain current: -30A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Case: PG-TO252-3
Drain-source voltage: -60V
Drain current: -30A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 1599 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
47+ | 1.53 EUR |
66+ | 1.09 EUR |
70+ | 1.03 EUR |
250+ | 0.99 EUR |
BAS7007E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
262+ | 0.27 EUR |
391+ | 0.18 EUR |
633+ | 0.11 EUR |
IRLR3410TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FF300R12KS4 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 259.72 EUR |
IRFSL3207ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC120N03LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC120N03MSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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Stück im Wert von UAH
BCX41E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
auf Bestellung 831 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.30 EUR |
319+ | 0.22 EUR |
486+ | 0.15 EUR |
667+ | 0.11 EUR |
705+ | 0.10 EUR |
BAS170WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Mounting: SMD
auf Bestellung 3038 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
280+ | 0.26 EUR |
377+ | 0.19 EUR |
466+ | 0.15 EUR |
560+ | 0.13 EUR |
889+ | 0.08 EUR |
939+ | 0.08 EUR |
BFP193WH6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPP60R160P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.29 EUR |
16+ | 4.68 EUR |
18+ | 4.05 EUR |
19+ | 3.83 EUR |
IPP60R160C6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB80N06S405ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS159NH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 1451 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
250+ | 0.29 EUR |
417+ | 0.17 EUR |
443+ | 0.16 EUR |
IRF7465TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1520KV18-333BZXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA65R110CFDXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 34.7W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 34.7W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPI65R110CFDXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO262-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO262-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP65R110CFDXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPG20N04S408ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 65W
Polarisation: unipolar
Gate charge: 28nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 65W
Polarisation: unipolar
Gate charge: 28nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 21.7nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 21.7nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPG20N04S4L11ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 11.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TDSON-8-4
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 11.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TDSON-8-4
Produkt ist nicht verfügbar
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IR2114SSPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Operating temperature: -40...125°C
Case: SSOP24
Power: 1.5W
Supply voltage: 10.4...20V DC
Turn-on time: 440ns
Turn-off time: 440ns
Output current: -1.5...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge
Voltage class: 0.6/1.2kV
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Operating temperature: -40...125°C
Case: SSOP24
Power: 1.5W
Supply voltage: 10.4...20V DC
Turn-on time: 440ns
Turn-off time: 440ns
Output current: -1.5...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge
Voltage class: 0.6/1.2kV
Mounting: SMD
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.36 EUR |
8+ | 8.94 EUR |
FB30R06W1E3BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
Produkt ist nicht verfügbar
Im Einkaufswagen
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BFP520H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
auf Bestellung 2086 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
171+ | 0.42 EUR |
243+ | 0.29 EUR |
317+ | 0.23 EUR |
336+ | 0.21 EUR |
IPP072N10N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.10 EUR |
BF888H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Frequency: 47GHz
Collector-emitter voltage: 4V
Current gain: 250
Collector current: 30mA
Type of transistor: NPN
Power dissipation: 0.16W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Frequency: 47GHz
Collector-emitter voltage: 4V
Current gain: 250
Collector current: 30mA
Type of transistor: NPN
Power dissipation: 0.16W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
IRS21531DSTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 2359 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.40 EUR |
57+ | 1.26 EUR |
75+ | 0.96 EUR |
80+ | 0.90 EUR |
IRFS7530TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Gate charge: 274nC
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Gate charge: 274nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB017N08N5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR400WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Mounting: SMD
Case: SOT343
Power: 0.33W
Supply voltage: 1.6...18V DC
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Mounting: SMD
Case: SOT343
Power: 0.33W
Supply voltage: 1.6...18V DC
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
302+ | 0.24 EUR |
353+ | 0.20 EUR |
428+ | 0.17 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
IPP034NE7N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
22+ | 3.40 EUR |
25+ | 2.95 EUR |
26+ | 2.79 EUR |
BSS606NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
157+ | 0.46 EUR |
191+ | 0.37 EUR |
319+ | 0.22 EUR |
338+ | 0.21 EUR |
IPI020N06NAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB017N10N5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLS3036TRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Drain-source voltage: 60V
Drain current: 210A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Mounting: SMD
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Drain-source voltage: 60V
Drain current: 210A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Mounting: SMD
Case: D2PAK-7
auf Bestellung 491 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.33 EUR |
19+ | 3.90 EUR |
23+ | 3.12 EUR |
25+ | 2.95 EUR |
1EDF5673FXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Supply voltage: 3...3.5V; 6.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1EDI20N12AFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH