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BAS16SH6727XTSA1 INFINEON TECHNOLOGIES bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.07 EUR
Mindestbestellmenge: 3000
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SMBT3906E6327HTSA1 SMBT3906E6327HTSA1 INFINEON TECHNOLOGIES SMBT3906E6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.20 EUR
582+0.12 EUR
711+0.10 EUR
784+0.09 EUR
906+0.08 EUR
1150+0.06 EUR
1217+0.06 EUR
Mindestbestellmenge: 358
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IPD90P03P4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD90P03P4L_04-DS-v01_00-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07e8373a27c4&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -90A; 137W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 137W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS3118N BTS3118N INFINEON TECHNOLOGIES BTS3118N-DTE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
On-state resistance: 70mΩ
Output voltage: 42V
Output current: 2.17A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223-3
auf Bestellung 1918 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
48+1.52 EUR
54+1.33 EUR
58+1.24 EUR
100+1.23 EUR
250+1.20 EUR
Mindestbestellmenge: 35
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IDK02G120C5XTMA1 INFINEON TECHNOLOGIES Infineon-IDK02G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0ba7b0f38 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 2A; 75W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 6µA
Max. forward impulse current: 31A
Kind of package: reel; tape
Power dissipation: 75W
Produkt ist nicht verfügbar
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IDK02G65C5 INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Leakage current: 0.4µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
Produkt ist nicht verfügbar
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IDK02G65C5XTMA1 IDK02G65C5XTMA1 INFINEON TECHNOLOGIES IDK02G65C5-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Leakage current: 0.1µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
auf Bestellung 646 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
131+0.55 EUR
137+0.52 EUR
143+0.50 EUR
Mindestbestellmenge: 125
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TLE6225GXUMA1 INFINEON TECHNOLOGIES TLE6225G.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.46 EUR
Mindestbestellmenge: 1000
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BCV62CE6327 BCV62CE6327 INFINEON TECHNOLOGIES BCV62.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
248+0.29 EUR
368+0.19 EUR
596+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 186
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IKCM15L60GDXKMA1 IKCM15L60GDXKMA1 INFINEON TECHNOLOGIES IKCM15L60GD.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Produkt ist nicht verfügbar
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IKCM20L60GAXKMA1 IKCM20L60GAXKMA1 INFINEON TECHNOLOGIES IKCM20L60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 29.2W
Produkt ist nicht verfügbar
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CY7C64225-28PVXC INFINEON TECHNOLOGIES CY7C64225.PDF Category: Integrated circuits - Unclassified
Description: CY7C64225-28PVXC
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
47+3.95 EUR
141+3.55 EUR
Mindestbestellmenge: 47
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BSZ900N20NS3GATMA1 BSZ900N20NS3GATMA1 INFINEON TECHNOLOGIES BSZ900N20NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8
Drain-source voltage: 200V
Drain current: 15.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
46+1.59 EUR
55+1.32 EUR
58+1.24 EUR
250+1.23 EUR
500+1.20 EUR
Mindestbestellmenge: 38
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BSZ900N15NS3GATMA1 BSZ900N15NS3GATMA1 INFINEON TECHNOLOGIES BSZ900N15NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Drain-source voltage: 150V
Drain current: 13A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 3058 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
65+1.12 EUR
100+0.72 EUR
106+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 50
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BCR116E6327HTSA1 INFINEON TECHNOLOGIES bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 102000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.04 EUR
Mindestbestellmenge: 3000
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BCR116E6433HTMA1 INFINEON TECHNOLOGIES bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.04 EUR
Mindestbestellmenge: 10000
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IMW65R027M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Mounting: THT
Drain-source voltage: 650V
Drain current: 39A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -5...23V
Pulsed drain current: 185A
Case: TO247
Produkt ist nicht verfügbar
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IMZA65R027M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -5...23V
Pulsed drain current: 184A
Case: TO247-4
Produkt ist nicht verfügbar
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IR2233SPBF IR2233SPBF INFINEON TECHNOLOGIES IR2133JPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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IR2233PBF IR2233PBF INFINEON TECHNOLOGIES IR2133JPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Power: 1.5W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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IR2233JTRPBF INFINEON TECHNOLOGIES IRSDS12168-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
500+10.05 EUR
Mindestbestellmenge: 500
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BAS16SH6727XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.07 EUR
Mindestbestellmenge: 3000
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SMBT3906E6327HTSA1 SMBT3906E6327.pdf
SMBT3906E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.20 EUR
582+0.12 EUR
711+0.10 EUR
784+0.09 EUR
906+0.08 EUR
1150+0.06 EUR
1217+0.06 EUR
Mindestbestellmenge: 358
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IPD90P03P4L04ATMA1 Infineon-IPD90P03P4L_04-DS-v01_00-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07e8373a27c4&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -90A; 137W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 137W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS3118N BTS3118N-DTE.pdf
BTS3118N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
On-state resistance: 70mΩ
Output voltage: 42V
Output current: 2.17A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223-3
auf Bestellung 1918 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
48+1.52 EUR
54+1.33 EUR
58+1.24 EUR
100+1.23 EUR
250+1.20 EUR
Mindestbestellmenge: 35
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IDK02G120C5XTMA1 Infineon-IDK02G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0ba7b0f38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 2A; 75W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 6µA
Max. forward impulse current: 31A
Kind of package: reel; tape
Power dissipation: 75W
Produkt ist nicht verfügbar
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IDK02G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Leakage current: 0.4µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
Produkt ist nicht verfügbar
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IDK02G65C5XTMA1 IDK02G65C5-DTE.pdf
IDK02G65C5XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Leakage current: 0.1µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
auf Bestellung 646 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
131+0.55 EUR
137+0.52 EUR
143+0.50 EUR
Mindestbestellmenge: 125
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TLE6225GXUMA1 TLE6225G.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.46 EUR
Mindestbestellmenge: 1000
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BCV62CE6327 BCV62.pdf
BCV62CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
248+0.29 EUR
368+0.19 EUR
596+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 186
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IKCM15L60GDXKMA1 IKCM15L60GD.pdf
IKCM15L60GDXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Produkt ist nicht verfügbar
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IKCM20L60GAXKMA1 IKCM20L60GA.pdf
IKCM20L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 29.2W
Produkt ist nicht verfügbar
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CY7C64225-28PVXC CY7C64225.PDF
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY7C64225-28PVXC
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+3.95 EUR
141+3.55 EUR
Mindestbestellmenge: 47
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BSZ900N20NS3GATMA1 BSZ900N20NS3G-DTE.pdf
BSZ900N20NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8
Drain-source voltage: 200V
Drain current: 15.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
46+1.59 EUR
55+1.32 EUR
58+1.24 EUR
250+1.23 EUR
500+1.20 EUR
Mindestbestellmenge: 38
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BSZ900N15NS3GATMA1 BSZ900N15NS3G-DTE.pdf
BSZ900N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Drain-source voltage: 150V
Drain current: 13A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 3058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
65+1.12 EUR
100+0.72 EUR
106+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 50
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BCR116E6327HTSA1 bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 102000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.04 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BCR116E6433HTMA1 bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.04 EUR
Mindestbestellmenge: 10000
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IMW65R027M1HXKSA1 Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Mounting: THT
Drain-source voltage: 650V
Drain current: 39A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -5...23V
Pulsed drain current: 185A
Case: TO247
Produkt ist nicht verfügbar
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IMZA65R027M1HXKSA1 Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -5...23V
Pulsed drain current: 184A
Case: TO247-4
Produkt ist nicht verfügbar
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IR2233SPBF IR2133JPBF.pdf
IR2233SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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IR2233PBF description IR2133JPBF.pdf
IR2233PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Power: 1.5W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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IR2233JTRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+10.05 EUR
Mindestbestellmenge: 500
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