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IRFR120ZTRPBF IRFR120ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C05ABFC02CF1A303005056AB0C4F&compId=irfr120zpbf.pdf?ci_sign=6db91d95a0791cfe8a3ae22805dafb5a07efec97 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 8.7A
Produkt ist nicht verfügbar
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BSS123NH6433XTMA1 BSS123NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Case: SOT23
Drain-source voltage: 100V
Drain current: 0.15A
auf Bestellung 1973 Stücke:
Lieferzeit 14-21 Tag (e)
241+0.3 EUR
353+0.2 EUR
481+0.15 EUR
581+0.12 EUR
688+0.1 EUR
1254+0.057 EUR
1327+0.054 EUR
Mindestbestellmenge: 241
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IRF5803TRPBF IRF5803TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F660770F4C8F1A303005056AB0C4F&compId=irf5803pbf.pdf?ci_sign=ea8fe42d8b837d27729d01f05b970f352b209186 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3689 Stücke:
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157+0.46 EUR
217+0.33 EUR
266+0.27 EUR
414+0.17 EUR
439+0.16 EUR
Mindestbestellmenge: 157
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IPA60R190P6XKSA1 IPA60R190P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C967A58C71BF&compId=IPA60R190P6-DTE.pdf?ci_sign=103642d66197600c23afd64a60a16e360317670a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 331 Stücke:
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28+2.57 EUR
32+2.3 EUR
33+2.23 EUR
34+2.14 EUR
35+2.1 EUR
50+2.02 EUR
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PVDZ172NPBF PVDZ172NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED681A961E89D5611BF&compId=pvdz172.pdf?ci_sign=57f8b5c83e175231261dae25c5b87c62d89bb814 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Case: DIP8
On-state resistance: 0.25Ω
Contacts configuration: SPST-NO
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: MOSFET
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...60V DC
Operating temperature: -40...85°C
Manufacturer series: PVDZ172NPbF
Mounting: THT
auf Bestellung 35 Stücke:
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5+17.12 EUR
9+8.31 EUR
10+7.85 EUR
Mindestbestellmenge: 5
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IRS21867STRPBF IRS21867STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7858F252E3D398745&compId=IRS21867SPBF.pdf?ci_sign=88dd69e07b9fd8b786cd4a2ea3106a4516073218 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 1723 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.97 EUR
28+2.65 EUR
32+2.29 EUR
34+2.16 EUR
500+2.07 EUR
Mindestbestellmenge: 25
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IRFB5615PBF IRFB5615PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A92F1A6F5005056AB5A8F&compId=irfb5615pbf.pdf?ci_sign=80600ca67fd3aa93379833fd484c2b89c0c90b93 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Case: TO220AB
Drain-source voltage: 150V
Drain current: 35A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Kind of package: tube
Gate charge: 26nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 106 Stücke:
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34+2.14 EUR
49+1.49 EUR
69+1.04 EUR
73+0.99 EUR
Mindestbestellmenge: 34
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2EDL05N06PFXUMA1 2EDL05N06PFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD805EAF74858BF&compId=2EDL05x06xx.pdf?ci_sign=7999722de50faf3fdb5dc2fbea2cef9b3aedf4c1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
auf Bestellung 1266 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
42+1.73 EUR
49+1.49 EUR
51+1.42 EUR
500+1.36 EUR
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2EDN7524FXTMA1 2EDN7524FXTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89FD3A06247BE27&compId=2EDN752x-DTE.pdf?ci_sign=73ce39ec47775568bc52b8a7a41d3188f5d88d83 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Voltage class: 20V
Supply voltage: 4.5...20V
auf Bestellung 1575 Stücke:
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59+1.22 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 59
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IRLR7833TRPBF IRLR7833TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222808C201668F1A303005056AB0C4F&compId=irlr7833pbf.pdf?ci_sign=2863666ec9e1fdcf6394e4e87da7650719bba319 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS462T BTS462T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0475774F791F1A6F5005056AB5A8F&compId=BTS462T.pdf?ci_sign=1d5964edb3095262449921568cec353326577b95 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 2356 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.43 EUR
33+2.2 EUR
35+2.09 EUR
500+2 EUR
Mindestbestellmenge: 17
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IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 43 Stücke:
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27+2.67 EUR
36+2.02 EUR
43+1.66 EUR
Mindestbestellmenge: 27
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FP75R12KT4 FP75R12KT4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3979250FD616749&compId=FP75R12KT4.pdf?ci_sign=0a787b86b74eb0847aa8fc8fe9a9278194481dfb Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Application: Inverter
Power dissipation: 385W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Type of semiconductor module: IGBT
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
1+278.85 EUR
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IRFB4229PBF IRFB4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B744F1A6F5005056AB5A8F&compId=irfb4229pbf.pdf?ci_sign=099d45bd879f089864a70a24e11bc96a170d58a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
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BAT1504WH6327XTSA1 BAT1504WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFE1F57EAAE469&compId=BAT1503WE6327HTSA1.pdf?ci_sign=92ad46a24666fc88bcb2108d1b3c891a264bbdbd Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: double series
Power dissipation: 0.1W
auf Bestellung 2251 Stücke:
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117+0.61 EUR
177+0.4 EUR
261+0.27 EUR
275+0.26 EUR
Mindestbestellmenge: 117
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BTS711L1 BTS711L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B422D9468CA469&compId=BTS711L1.pdf?ci_sign=445bcc63dc051b22c43e87a03d39e4f9fd6897c6 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
On-state resistance: 50mΩ
Output current: 1.9...4.4A
Number of channels: 4
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
auf Bestellung 677 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.22 EUR
15+5.03 EUR
16+4.76 EUR
Mindestbestellmenge: 8
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IRF300P226 IRF300P226 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5F4C3ED4E4A18&compId=IRF300P226.pdf?ci_sign=523cfb4517b457f02217f0b7903329d12f595169 Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 191nC
Produkt ist nicht verfügbar
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IRF300P227 IRF300P227 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED887AB2225E6692A18&compId=IRF300P227.pdf?ci_sign=5c942898fab40cc8874ca0703a86883c323b92ab Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 107nC
Produkt ist nicht verfügbar
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IRF3315STRLPBF IRF3315STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A1ADDD9CAD0E4A50&compId=irf3315spbf.pdf?ci_sign=0e1d63ccd450cb40e9a6b5e6f02a87536ad5f2e8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3703PBF IRF3703PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F60B7C9FAF0F1A303005056AB0C4F&compId=irf3703pbf.pdf?ci_sign=09e7d33b780a65393a9f6976e90f8401411e90b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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BSS123IXTSA1 BSS123IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.63nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
auf Bestellung 1666 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
544+0.13 EUR
691+0.1 EUR
802+0.089 EUR
942+0.076 EUR
1544+0.046 EUR
1629+0.044 EUR
Mindestbestellmenge: 278
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BSS123NH6327XTSA1 BSS123NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7986F2E9A110B&compId=BSS123NH6327XTSA1.pdf?ci_sign=9a7693d8bcaa2b783851a85885fc7097b4b467a7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
auf Bestellung 24019 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
424+0.17 EUR
491+0.15 EUR
785+0.091 EUR
1194+0.06 EUR
1260+0.057 EUR
6000+0.054 EUR
Mindestbestellmenge: 295
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IRF1324PBF IRF1324PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57AA3F1A6F5005056AB5A8F&compId=irf1324pbf.pdf?ci_sign=acd484969284c33c68b4f85f5b08d355fbc80d72 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
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20+3.68 EUR
35+2.1 EUR
36+1.99 EUR
50+1.97 EUR
Mindestbestellmenge: 20
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AUIRF1324STRL AUIRF1324STRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3A3FAA0BC9C7969E4&compId=AUIRF1324STRL.pdf?ci_sign=27b5c15d4666262949c44068c31395577e196a0d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF1324WL AUIRF1324WL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458231F46DF1A6F5005056AB5A8F&compId=auirf1324wl.pdf?ci_sign=ee1cb2e176d095f29d80ce110d4f3ed9bce65211 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ110N06NS3GATMA1 INFINEON TECHNOLOGIES BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Drain-source voltage: 60V
Drain current: 20A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
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BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E42CFD251E11C&compId=BSZ110N08NS5-DTE.pdf?ci_sign=f275ad3f127399cd10fc2d635f9bdc2dfb4fa4d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
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BCR133SH6327 BCR133SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A08E45B8E469&compId=BCR133.pdf?ci_sign=f326d205106dded54591a302ba389bcff56e3c4a Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Frequency: 130MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT363
auf Bestellung 4913 Stücke:
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447+0.16 EUR
667+0.11 EUR
866+0.083 EUR
916+0.078 EUR
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IR2130SPBF IR2130SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD344AF1A6F5005056AB5A8F&compId=ir2130_2132.pdf?ci_sign=f85032c07ef2df25a862e6332adad85ea7e18b34 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 21 Stücke:
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7+10.72 EUR
9+8.22 EUR
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IR2133SPBF IR2133SPBF INFINEON TECHNOLOGIES IRSDS12168-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
auf Bestellung 14 Stücke:
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8+9.61 EUR
10+7.51 EUR
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IRFB4321PBF IRFB4321PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ADE1C9B8ADAEFE27&compId=IRFB4321PBF-DTE.pdf?ci_sign=ac172432e5caf556bc0aacd18b384ef70e2cb9b8 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 86 Stücke:
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18+3.98 EUR
32+2.25 EUR
34+2.12 EUR
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IRFB4332PbF IRFB4332PbF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A5AF1A6F5005056AB5A8F&compId=irfb4332pbf.pdf?ci_sign=bca76ab9566f1edc45d73ba9659a4589e67340f2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
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SPA06N80C3 SPA06N80C3 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 19 Stücke:
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SPP06N80C3 SPP06N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74551DE5955EA&compId=SPP06N80C3.pdf?ci_sign=de98f335fae22c53c534d0cca62632e985b3ec96 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AIHD10N60RFATMA1 AIHD10N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA5C743CCE9820&compId=AIHD10N60RF.pdf?ci_sign=bac07947d49b12dbb3c05a8d007c6697ec7f2c24 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 27ns
Turn-off time: 186ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IRS21094PBF IRS21094PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
auf Bestellung 99 Stücke:
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46+1.59 EUR
48+1.52 EUR
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IRS21094SPBF IRS21094SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108PBF IRS2108PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2108SPBF IRS2108SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 84 Stücke:
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23+3.2 EUR
26+2.85 EUR
30+2.46 EUR
31+2.32 EUR
Mindestbestellmenge: 23
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IRFB3307ZPBF IRFB3307ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6DBF1A6F5005056AB5A8F&compId=irfs3307zpbf.pdf?ci_sign=745ca6cfbb3bee6d11b93d0f36d18bb15218eaea Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 112 Stücke:
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23+3.23 EUR
31+2.37 EUR
50+1.46 EUR
53+1.37 EUR
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IRFIZ44NPBF IRFIZ44NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA4FF1A6F5005056AB5A8F&compId=irfiz44n.pdf?ci_sign=c1a240674b51848f6a75be41ec7304403b6acc63 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 43.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 242 Stücke:
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33+2.19 EUR
48+1.5 EUR
96+0.75 EUR
102+0.71 EUR
Mindestbestellmenge: 33
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IRFR120NTRPBF IRFR120NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C03E7E09C8F1A303005056AB0C4F&compId=irfr120npbf.pdf?ci_sign=7f63985421ca573e2961fdac6eac7824a6b1dc3f description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR6215TRPBF IRFR6215TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C517D20416F1A303005056AB0C4F&compId=irfr6215pbf.pdf?ci_sign=bf33c014ce9fd9f0e1f0849046b1f285842f7d28 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Drain-source voltage: -150V
Drain current: -13A
Type of transistor: P-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 2675 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
69+1.04 EUR
128+0.56 EUR
135+0.53 EUR
2000+0.51 EUR
Mindestbestellmenge: 50
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IRFSL4410ZPBF IRFSL4410ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B398B902C5F1A303005056AB0C4F&compId=irfb4410zpbf.pdf?ci_sign=f2e7cd0a50c82652749fa28e2826325e25e7f758 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Power dissipation: 230W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 97A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BC856SH6327 BC856SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E14F5A90A469&compId=BC856UE6327.pdf?ci_sign=c2ecd216c6b7a85380859c7690c18974de788084 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1434 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
338+0.21 EUR
516+0.14 EUR
873+0.082 EUR
923+0.078 EUR
Mindestbestellmenge: 250
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BSS139H6327XTSA1 BSS139H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77521E006811C&compId=BSS139H6327XTSA1.pdf?ci_sign=3ea77d60429e3dc7332d53b5d8ff41a954bf7f5d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 250V
Drain current: 0.1A
On-state resistance: 30Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 7733 Stücke:
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129+0.56 EUR
379+0.19 EUR
400+0.18 EUR
3000+0.17 EUR
Mindestbestellmenge: 129
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BSP170PH6327XTSA1 BSP170PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92120B826931CC&compId=BSP170PH6327XTSA1-DTE.PDF?ci_sign=540de0dc018c21b19c0ba6b0c473e3d678db565d Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: PG-SOT223
auf Bestellung 1822 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
104+0.69 EUR
133+0.54 EUR
235+0.3 EUR
248+0.29 EUR
Mindestbestellmenge: 69
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IRS21864SPBF IRS21864SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4DA1F1A6F5005056AB5A8F&compId=irs2186pbf.pdf?ci_sign=a962ece52a67d28c2642f6bb0dfab4962e267626 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
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IGW25T120FKSA1 IGW25T120FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3665FECC20FA8&compId=IGW25T120-DTE.pdf?ci_sign=ca8598ac0668efa9a4bc236b76fc20f1cd92acf3 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Mounting: THT
Case: TO247-3
auf Bestellung 54 Stücke:
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16+4.62 EUR
21+3.53 EUR
22+3.35 EUR
Mindestbestellmenge: 16
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IRL7833STRLPBF IRL7833STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222766451D6E7F1A303005056AB0C4F&compId=irl7833pbf.pdf?ci_sign=3f17a2919623b1c00483138df81c44cfb13be3b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Case: D2PAK
Drain-source voltage: 30V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA3A9933A0411C&compId=IPA037N08N3G-DTE.pdf?ci_sign=6b115aba7aa7ae88218f5a510759582c14070b7e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Drain-source voltage: 80V
Drain current: 75A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220FP
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.38 EUR
19+3.79 EUR
24+2.97 EUR
Mindestbestellmenge: 17
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IPD90N04S405ATMA1 IPD90N04S405ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998BAEC1DA6D7B820&compId=IPD90N04S405.pdf?ci_sign=e5fc15d5072846873debc1d1932ae19d845a375d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Case: PG-TO252-3-313
Drain-source voltage: 40V
Drain current: 61A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel
Gate charge: 18nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 344A
Mounting: SMD
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 IPD068P03L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFBF776EAAA745&compId=IPD068P03L3GATMA1.pdf?ci_sign=2440192ca958ac957a27cfd56d61e46ba5123ab7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Drain current: -70A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Power dissipation: 100W
Polarisation: unipolar
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB065N15N3GATMA1 IPB065N15N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD43E35CE411C&compId=IPB065N15N3G-DTE.pdf?ci_sign=bab39003ca39c7c61880785944b70ac8bbebe7f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Produkt ist nicht verfügbar
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TLE7181EMXUMA1 TLE7181EMXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC7045A66088A15&compId=TLE7181EM.pdf?ci_sign=31b4483a018d90a92ae0ce3f533bdf2ef721bf75 Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Operating temperature: -40...150°C
Case: SSOP24
Supply voltage: 7...34V DC
Turn-on time: 250ns
Turn-off time: 200ns
Mounting: SMD
Number of channels: 4
Kind of output: non-inverting
Kind of integrated circuit: MOSFET gate driver
Topology: H-bridge; push-pull
Produkt ist nicht verfügbar
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TLE7182EMXUMA1 TLE7182EMXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC71BF6EAAB8A15&compId=TLE7182EM.pdf?ci_sign=24d6ba42ecb5c5995c5642959ae1b5354a6d60ff Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Operating temperature: -40...150°C
Case: SSOP24
Supply voltage: 7...34V DC
Turn-on time: 250ns
Turn-off time: 200ns
Mounting: SMD
Number of channels: 4
Kind of integrated circuit: MOSFET gate driver
Topology: H-bridge; push-pull
Produkt ist nicht verfügbar
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IPB160N04S4LH1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPA07N60C3 SPA07N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD73A7A7ACFF5EA&compId=SPA07N60C3.pdf?ci_sign=11296604cba915af8d95d589c7c7d0db1b519f42 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.56 EUR
40+1.82 EUR
42+1.72 EUR
50+1.7 EUR
100+1.64 EUR
Mindestbestellmenge: 21
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SPP07N60C3 SPP07N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58CAF949F5A874A&compId=SPx07N60C3.pdf?ci_sign=d30e40c6cca869d635e53260e170358f87f64a9d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IRS25401PBF IRS25401PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222831E099A5DF1A303005056AB0C4F&compId=irs25401pbf.pdf?ci_sign=e254e61d544328852a104fbb88372e928f9b660a Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Mounting: THT
Kind of package: tube
Case: DIP8
Supply voltage: 8...16.6V DC
Turn-on time: 320ns
Turn-off time: 180ns
Output current: -700...500mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: high-/low-side; LED driver
Topology: buck
Voltage class: 200V
Operating temperature: -25...125°C
Power: 1W
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.66 EUR
Mindestbestellmenge: 43
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IRFR120ZTRPBF pVersion=0046&contRep=ZT&docId=E221C05ABFC02CF1A303005056AB0C4F&compId=irfr120zpbf.pdf?ci_sign=6db91d95a0791cfe8a3ae22805dafb5a07efec97
IRFR120ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 8.7A
Produkt ist nicht verfügbar
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BSS123NH6433XTMA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
Case: SOT23
Drain-source voltage: 100V
Drain current: 0.15A
auf Bestellung 1973 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
241+0.3 EUR
353+0.2 EUR
481+0.15 EUR
581+0.12 EUR
688+0.1 EUR
1254+0.057 EUR
1327+0.054 EUR
Mindestbestellmenge: 241
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IRF5803TRPBF pVersion=0046&contRep=ZT&docId=E21F660770F4C8F1A303005056AB0C4F&compId=irf5803pbf.pdf?ci_sign=ea8fe42d8b837d27729d01f05b970f352b209186
IRF5803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3689 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
217+0.33 EUR
266+0.27 EUR
414+0.17 EUR
439+0.16 EUR
Mindestbestellmenge: 157
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IPA60R190P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C967A58C71BF&compId=IPA60R190P6-DTE.pdf?ci_sign=103642d66197600c23afd64a60a16e360317670a
IPA60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
32+2.3 EUR
33+2.23 EUR
34+2.14 EUR
35+2.1 EUR
50+2.02 EUR
Mindestbestellmenge: 28
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PVDZ172NPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED681A961E89D5611BF&compId=pvdz172.pdf?ci_sign=57f8b5c83e175231261dae25c5b87c62d89bb814
PVDZ172NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Case: DIP8
On-state resistance: 0.25Ω
Contacts configuration: SPST-NO
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: MOSFET
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...60V DC
Operating temperature: -40...85°C
Manufacturer series: PVDZ172NPbF
Mounting: THT
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.12 EUR
9+8.31 EUR
10+7.85 EUR
Mindestbestellmenge: 5
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IRS21867STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7858F252E3D398745&compId=IRS21867SPBF.pdf?ci_sign=88dd69e07b9fd8b786cd4a2ea3106a4516073218
IRS21867STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 1723 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.97 EUR
28+2.65 EUR
32+2.29 EUR
34+2.16 EUR
500+2.07 EUR
Mindestbestellmenge: 25
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IRFB5615PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A92F1A6F5005056AB5A8F&compId=irfb5615pbf.pdf?ci_sign=80600ca67fd3aa93379833fd484c2b89c0c90b93
IRFB5615PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Case: TO220AB
Drain-source voltage: 150V
Drain current: 35A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Kind of package: tube
Gate charge: 26nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
49+1.49 EUR
69+1.04 EUR
73+0.99 EUR
Mindestbestellmenge: 34
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2EDL05N06PFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD805EAF74858BF&compId=2EDL05x06xx.pdf?ci_sign=7999722de50faf3fdb5dc2fbea2cef9b3aedf4c1
2EDL05N06PFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
auf Bestellung 1266 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
42+1.73 EUR
49+1.49 EUR
51+1.42 EUR
500+1.36 EUR
Mindestbestellmenge: 37
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2EDN7524FXTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89FD3A06247BE27&compId=2EDN752x-DTE.pdf?ci_sign=73ce39ec47775568bc52b8a7a41d3188f5d88d83
2EDN7524FXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Voltage class: 20V
Supply voltage: 4.5...20V
auf Bestellung 1575 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 59
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IRLR7833TRPBF pVersion=0046&contRep=ZT&docId=E222808C201668F1A303005056AB0C4F&compId=irlr7833pbf.pdf?ci_sign=2863666ec9e1fdcf6394e4e87da7650719bba319
IRLR7833TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS462T pVersion=0046&contRep=ZT&docId=E1C0475774F791F1A6F5005056AB5A8F&compId=BTS462T.pdf?ci_sign=1d5964edb3095262449921568cec353326577b95
BTS462T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 2356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.43 EUR
33+2.2 EUR
35+2.09 EUR
500+2 EUR
Mindestbestellmenge: 17
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IRF1104PBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce
IRF1104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
36+2.02 EUR
43+1.66 EUR
Mindestbestellmenge: 27
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FP75R12KT4 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3979250FD616749&compId=FP75R12KT4.pdf?ci_sign=0a787b86b74eb0847aa8fc8fe9a9278194481dfb
FP75R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Application: Inverter
Power dissipation: 385W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Type of semiconductor module: IGBT
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+278.85 EUR
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IRFB4229PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B744F1A6F5005056AB5A8F&compId=irfb4229pbf.pdf?ci_sign=099d45bd879f089864a70a24e11bc96a170d58a6
IRFB4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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BAT1504WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFE1F57EAAE469&compId=BAT1503WE6327HTSA1.pdf?ci_sign=92ad46a24666fc88bcb2108d1b3c891a264bbdbd
BAT1504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: double series
Power dissipation: 0.1W
auf Bestellung 2251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
177+0.4 EUR
261+0.27 EUR
275+0.26 EUR
Mindestbestellmenge: 117
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BTS711L1 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B422D9468CA469&compId=BTS711L1.pdf?ci_sign=445bcc63dc051b22c43e87a03d39e4f9fd6897c6
BTS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
On-state resistance: 50mΩ
Output current: 1.9...4.4A
Number of channels: 4
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
auf Bestellung 677 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.22 EUR
15+5.03 EUR
16+4.76 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF300P226 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5F4C3ED4E4A18&compId=IRF300P226.pdf?ci_sign=523cfb4517b457f02217f0b7903329d12f595169
IRF300P226
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 191nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF300P227 pVersion=0046&contRep=ZT&docId=005056AB752F1ED887AB2225E6692A18&compId=IRF300P227.pdf?ci_sign=5c942898fab40cc8874ca0703a86883c323b92ab
IRF300P227
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 107nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3315STRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A1ADDD9CAD0E4A50&compId=irf3315spbf.pdf?ci_sign=0e1d63ccd450cb40e9a6b5e6f02a87536ad5f2e8
IRF3315STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3703PBF pVersion=0046&contRep=ZT&docId=E21F60B7C9FAF0F1A303005056AB0C4F&compId=irf3703pbf.pdf?ci_sign=09e7d33b780a65393a9f6976e90f8401411e90b8
IRF3703PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSS123IXTSA1 Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46
BSS123IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.63nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
auf Bestellung 1666 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
544+0.13 EUR
691+0.1 EUR
802+0.089 EUR
942+0.076 EUR
1544+0.046 EUR
1629+0.044 EUR
Mindestbestellmenge: 278
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BSS123NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7986F2E9A110B&compId=BSS123NH6327XTSA1.pdf?ci_sign=9a7693d8bcaa2b783851a85885fc7097b4b467a7
BSS123NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.15A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.6nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.77A
auf Bestellung 24019 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
424+0.17 EUR
491+0.15 EUR
785+0.091 EUR
1194+0.06 EUR
1260+0.057 EUR
6000+0.054 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
IRF1324PBF pVersion=0046&contRep=ZT&docId=E1C04E34F57AA3F1A6F5005056AB5A8F&compId=irf1324pbf.pdf?ci_sign=acd484969284c33c68b4f85f5b08d355fbc80d72
IRF1324PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.68 EUR
35+2.1 EUR
36+1.99 EUR
50+1.97 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1324STRL pVersion=0046&contRep=ZT&docId=005056AB752F1ED3A3FAA0BC9C7969E4&compId=AUIRF1324STRL.pdf?ci_sign=27b5c15d4666262949c44068c31395577e196a0d
AUIRF1324STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1324WL pVersion=0046&contRep=ZT&docId=E1C0458231F46DF1A6F5005056AB5A8F&compId=auirf1324wl.pdf?ci_sign=ee1cb2e176d095f29d80ce110d4f3ed9bce65211
AUIRF1324WL
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ110N06NS3GATMA1 BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Drain-source voltage: 60V
Drain current: 20A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ110N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E42CFD251E11C&compId=BSZ110N08NS5-DTE.pdf?ci_sign=f275ad3f127399cd10fc2d635f9bdc2dfb4fa4d0
BSZ110N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR133SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A08E45B8E469&compId=BCR133.pdf?ci_sign=f326d205106dded54591a302ba389bcff56e3c4a
BCR133SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Frequency: 130MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT363
auf Bestellung 4913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
447+0.16 EUR
667+0.11 EUR
866+0.083 EUR
916+0.078 EUR
Mindestbestellmenge: 447
Im Einkaufswagen  Stück im Wert von  UAH
IR2130SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD344AF1A6F5005056AB5A8F&compId=ir2130_2132.pdf?ci_sign=f85032c07ef2df25a862e6332adad85ea7e18b34
IR2130SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.72 EUR
9+8.22 EUR
10+7.78 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IR2133SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.61 EUR
10+7.51 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4321PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ADE1C9B8ADAEFE27&compId=IRFB4321PBF-DTE.pdf?ci_sign=ac172432e5caf556bc0aacd18b384ef70e2cb9b8
IRFB4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
32+2.25 EUR
34+2.12 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4332PbF pVersion=0046&contRep=ZT&docId=E1C04E5F284A5AF1A6F5005056AB5A8F&compId=irfb4332pbf.pdf?ci_sign=bca76ab9566f1edc45d73ba9659a4589e67340f2
IRFB4332PbF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
SPA06N80C3
SPA06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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SPP06N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74551DE5955EA&compId=SPP06N80C3.pdf?ci_sign=de98f335fae22c53c534d0cca62632e985b3ec96
SPP06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIHD10N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA5C743CCE9820&compId=AIHD10N60RF.pdf?ci_sign=bac07947d49b12dbb3c05a8d007c6697ec7f2c24
AIHD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 27ns
Turn-off time: 186ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21094PBF description pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd
IRS21094PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRS21094SPBF pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd
IRS21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2108PBF pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082
IRS2108PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2108SPBF pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082
IRS2108SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
26+2.85 EUR
30+2.46 EUR
31+2.32 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3307ZPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6DBF1A6F5005056AB5A8F&compId=irfs3307zpbf.pdf?ci_sign=745ca6cfbb3bee6d11b93d0f36d18bb15218eaea
IRFB3307ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
31+2.37 EUR
50+1.46 EUR
53+1.37 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRFIZ44NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA4FF1A6F5005056AB5A8F&compId=irfiz44n.pdf?ci_sign=c1a240674b51848f6a75be41ec7304403b6acc63
IRFIZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 43.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
48+1.5 EUR
96+0.75 EUR
102+0.71 EUR
Mindestbestellmenge: 33
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IRFR120NTRPBF description pVersion=0046&contRep=ZT&docId=E221C03E7E09C8F1A303005056AB0C4F&compId=irfr120npbf.pdf?ci_sign=7f63985421ca573e2961fdac6eac7824a6b1dc3f
IRFR120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR6215TRPBF pVersion=0046&contRep=ZT&docId=E221C517D20416F1A303005056AB0C4F&compId=irfr6215pbf.pdf?ci_sign=bf33c014ce9fd9f0e1f0849046b1f285842f7d28
IRFR6215TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Drain-source voltage: -150V
Drain current: -13A
Type of transistor: P-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 2675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
69+1.04 EUR
128+0.56 EUR
135+0.53 EUR
2000+0.51 EUR
Mindestbestellmenge: 50
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IRFSL4410ZPBF pVersion=0046&contRep=ZT&docId=E221B398B902C5F1A303005056AB0C4F&compId=irfb4410zpbf.pdf?ci_sign=f2e7cd0a50c82652749fa28e2826325e25e7f758
IRFSL4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Power dissipation: 230W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 97A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BC856SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E14F5A90A469&compId=BC856UE6327.pdf?ci_sign=c2ecd216c6b7a85380859c7690c18974de788084
BC856SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1434 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
338+0.21 EUR
516+0.14 EUR
873+0.082 EUR
923+0.078 EUR
Mindestbestellmenge: 250
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BSS139H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77521E006811C&compId=BSS139H6327XTSA1.pdf?ci_sign=3ea77d60429e3dc7332d53b5d8ff41a954bf7f5d
BSS139H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 250V
Drain current: 0.1A
On-state resistance: 30Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 7733 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
379+0.19 EUR
400+0.18 EUR
3000+0.17 EUR
Mindestbestellmenge: 129
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BSP170PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92120B826931CC&compId=BSP170PH6327XTSA1-DTE.PDF?ci_sign=540de0dc018c21b19c0ba6b0c473e3d678db565d
BSP170PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: PG-SOT223
auf Bestellung 1822 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
104+0.69 EUR
133+0.54 EUR
235+0.3 EUR
248+0.29 EUR
Mindestbestellmenge: 69
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IRS21864SPBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4DA1F1A6F5005056AB5A8F&compId=irs2186pbf.pdf?ci_sign=a962ece52a67d28c2642f6bb0dfab4962e267626
IRS21864SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
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IGW25T120FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3665FECC20FA8&compId=IGW25T120-DTE.pdf?ci_sign=ca8598ac0668efa9a4bc236b76fc20f1cd92acf3
IGW25T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Mounting: THT
Case: TO247-3
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.62 EUR
21+3.53 EUR
22+3.35 EUR
Mindestbestellmenge: 16
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IRL7833STRLPBF pVersion=0046&contRep=ZT&docId=E222766451D6E7F1A303005056AB0C4F&compId=irl7833pbf.pdf?ci_sign=3f17a2919623b1c00483138df81c44cfb13be3b9
IRL7833STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Case: D2PAK
Drain-source voltage: 30V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IPA037N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA3A9933A0411C&compId=IPA037N08N3G-DTE.pdf?ci_sign=6b115aba7aa7ae88218f5a510759582c14070b7e
IPA037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Drain-source voltage: 80V
Drain current: 75A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220FP
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.38 EUR
19+3.79 EUR
24+2.97 EUR
Mindestbestellmenge: 17
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IPD90N04S405ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998BAEC1DA6D7B820&compId=IPD90N04S405.pdf?ci_sign=e5fc15d5072846873debc1d1932ae19d845a375d
IPD90N04S405ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Case: PG-TO252-3-313
Drain-source voltage: 40V
Drain current: 61A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel
Gate charge: 18nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 344A
Mounting: SMD
Produkt ist nicht verfügbar
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IPD068P03L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFBF776EAAA745&compId=IPD068P03L3GATMA1.pdf?ci_sign=2440192ca958ac957a27cfd56d61e46ba5123ab7
IPD068P03L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Drain current: -70A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Power dissipation: 100W
Polarisation: unipolar
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB065N15N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBD43E35CE411C&compId=IPB065N15N3G-DTE.pdf?ci_sign=bab39003ca39c7c61880785944b70ac8bbebe7f0
IPB065N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Drain-source voltage: 150V
Drain current: 130A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Produkt ist nicht verfügbar
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TLE7181EMXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC7045A66088A15&compId=TLE7181EM.pdf?ci_sign=31b4483a018d90a92ae0ce3f533bdf2ef721bf75
TLE7181EMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Operating temperature: -40...150°C
Case: SSOP24
Supply voltage: 7...34V DC
Turn-on time: 250ns
Turn-off time: 200ns
Mounting: SMD
Number of channels: 4
Kind of output: non-inverting
Kind of integrated circuit: MOSFET gate driver
Topology: H-bridge; push-pull
Produkt ist nicht verfügbar
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TLE7182EMXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC71BF6EAAB8A15&compId=TLE7182EM.pdf?ci_sign=24d6ba42ecb5c5995c5642959ae1b5354a6d60ff
TLE7182EMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Operating temperature: -40...150°C
Case: SSOP24
Supply voltage: 7...34V DC
Turn-on time: 250ns
Turn-off time: 200ns
Mounting: SMD
Number of channels: 4
Kind of integrated circuit: MOSFET gate driver
Topology: H-bridge; push-pull
Produkt ist nicht verfügbar
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IPB160N04S4LH1ATMA1 Infineon-IPB160N04S4LH110-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f0ac006489
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPA07N60C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD73A7A7ACFF5EA&compId=SPA07N60C3.pdf?ci_sign=11296604cba915af8d95d589c7c7d0db1b519f42
SPA07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.56 EUR
40+1.82 EUR
42+1.72 EUR
50+1.7 EUR
100+1.64 EUR
Mindestbestellmenge: 21
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SPP07N60C3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58CAF949F5A874A&compId=SPx07N60C3.pdf?ci_sign=d30e40c6cca869d635e53260e170358f87f64a9d
SPP07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IRS25401PBF pVersion=0046&contRep=ZT&docId=E222831E099A5DF1A303005056AB0C4F&compId=irs25401pbf.pdf?ci_sign=e254e61d544328852a104fbb88372e928f9b660a
IRS25401PBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Mounting: THT
Kind of package: tube
Case: DIP8
Supply voltage: 8...16.6V DC
Turn-on time: 320ns
Turn-off time: 180ns
Output current: -700...500mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: high-/low-side; LED driver
Topology: buck
Voltage class: 200V
Operating temperature: -25...125°C
Power: 1W
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.66 EUR
Mindestbestellmenge: 43
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