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IRF9389TRPBF IRF9389TRPBF INFINEON TECHNOLOGIES IRF9389TRPBF.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF9310TRPBF IRF9310TRPBF INFINEON TECHNOLOGIES irf9310pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 30 Stücke:
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30+2.39 EUR
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IPT60R065S7XTMA1 IPT60R065S7XTMA1 INFINEON TECHNOLOGIES Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
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BSS159NH6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 1.7Ω
Drain-source voltage: 60V
Application: automotive industry
Case: SOT23
Produkt ist nicht verfügbar
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BSP89H6327XTSA1 BSP89H6327XTSA1 INFINEON TECHNOLOGIES BSP89H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain current: 0.35A
Power dissipation: 1.8W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
auf Bestellung 198 Stücke:
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143+0.5 EUR
175+0.41 EUR
198+0.36 EUR
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IRS2005STRPBF IRS2005STRPBF INFINEON TECHNOLOGIES infineon-irs2005s-m-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
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BSC057N08NS3GATMA1 BSC057N08NS3GATMA1 INFINEON TECHNOLOGIES BSC057N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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6EDL04I06PTXUMA1 INFINEON TECHNOLOGIES 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 13...17.5V
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
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6EDL04N02PR 6EDL04N02PR INFINEON TECHNOLOGIES 6EDL04N02PR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...17.5V
Voltage class: 200V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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CY8CKIT-062S2-43012 INFINEON TECHNOLOGIES Infineon-CY8CKIT-062S2-43012_PSoC_62S2_Wi-Fi_BT_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01c8f11927&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Unclassified
Description: CY8CKIT-062S2-43012
auf Bestellung 39 Stücke:
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3+216.32 EUR
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IPB018N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 187A; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 187A
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 800 Stücke:
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800+1.3 EUR
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IPD028N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD028N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8386267f0183a84489a82df3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 139A; 150W; PG-TO252-3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 139A
Power dissipation: 150W
Case: PG-TO252-3
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 102nC
Kind of channel: enhancement
Technology: SiC
auf Bestellung 4000 Stücke:
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2000+0.73 EUR
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IRS4426SPBF IRS4426SPBF INFINEON TECHNOLOGIES IRSDS11546-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -3.3...2.3A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
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BSC080N03MSGATMA1 BSC080N03MSGATMA1 INFINEON TECHNOLOGIES BSC080N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1066 Stücke:
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107+0.67 EUR
144+0.5 EUR
155+0.46 EUR
250+0.44 EUR
500+0.4 EUR
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ICE3B1565JFKLA1 INFINEON TECHNOLOGIES Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2 Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 1300 Stücke:
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IR2102SPBF IR2102SPBF INFINEON TECHNOLOGIES ir2101_2102.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
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BSC066N06NSATMA1 BSC066N06NSATMA1 INFINEON TECHNOLOGIES BSC066N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR15N20DTRPBF IRFR15N20DTRPBF INFINEON TECHNOLOGIES IRFR15N20DTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
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SPD02N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Gate charge: 12nC
On-state resistance: 2.7Ω
Drain current: 2A
Power dissipation: 42W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB039N10N3GATMA1 IPB039N10N3GATMA1 INFINEON TECHNOLOGIES IPB039N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Polarisation: unipolar
Kind of channel: enhancement
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IRFR120ZTRPBF IRFR120ZTRPBF INFINEON TECHNOLOGIES irfr120zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 8.7A
Power dissipation: 35W
Drain-source voltage: 100V
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRFR4105TRPBF IRFR4105TRPBF INFINEON TECHNOLOGIES irfr4105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFR4105ZTRL AUIRFR4105ZTRL INFINEON TECHNOLOGIES auirfr4105.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BCX53H6327XTSA1 BCX53H6327XTSA1 INFINEON TECHNOLOGIES BCX53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
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247+0.29 EUR
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IDP40E65D2XKSA1 IDP40E65D2XKSA1 INFINEON TECHNOLOGIES IDP40E65D2XKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; Ifsm: 250A; TO220-2; 36ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220-2
Reverse recovery time: 36ns
auf Bestellung 116 Stücke:
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33+2.17 EUR
40+1.83 EUR
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SPA06N80C3 SPA06N80C3 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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6+11.91 EUR
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SPP06N80C3 SPP06N80C3 INFINEON TECHNOLOGIES SPP06N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 89 Stücke:
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26+2.8 EUR
28+2.56 EUR
34+2.16 EUR
50+1.99 EUR
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SPD06N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
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IRL2203NSTRLPBF IRL2203NSTRLPBF INFINEON TECHNOLOGIES irl2203nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Output current: -0.5...0.5A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
auf Bestellung 2090 Stücke:
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38+1.93 EUR
42+1.73 EUR
50+1.47 EUR
100+1.37 EUR
250+1.29 EUR
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IRLL2705TRPBF IRLL2705TRPBF INFINEON TECHNOLOGIES irll2705pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5617 Stücke:
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74+0.97 EUR
115+0.62 EUR
152+0.47 EUR
185+0.39 EUR
217+0.33 EUR
243+0.29 EUR
500+0.28 EUR
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IRLL2703TRPBF IRLL2703TRPBF INFINEON TECHNOLOGIES IRSDS06555-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 45mΩ
Gate-source voltage: ±16V
Pulsed drain current: 16A
Produkt ist nicht verfügbar
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IRLML2803TRPBF IRLML2803TRPBF INFINEON TECHNOLOGIES irlml2803.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 9855 Stücke:
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209+0.34 EUR
275+0.26 EUR
304+0.24 EUR
391+0.18 EUR
443+0.16 EUR
538+0.13 EUR
642+0.11 EUR
1000+0.093 EUR
3000+0.082 EUR
Mindestbestellmenge: 209
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IRLML5103TRPBF IRLML5103TRPBF INFINEON TECHNOLOGIES irlml5103pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1604 Stücke:
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179+0.4 EUR
248+0.29 EUR
447+0.16 EUR
667+0.11 EUR
1000+0.092 EUR
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IRLML6346TRPBF IRLML6346TRPBF INFINEON TECHNOLOGIES irlml6346pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.9nC
On-state resistance: 80mΩ
Gate-source voltage: ±12V
Pulsed drain current: 17A
auf Bestellung 415 Stücke:
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239+0.3 EUR
341+0.21 EUR
397+0.18 EUR
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IRLML6246TRPBF IRLML6246TRPBF INFINEON TECHNOLOGIES irlml6246pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3.5nC
On-state resistance: 46mΩ
Gate-source voltage: ±12V
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IPP011N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
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IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 INFINEON TECHNOLOGIES Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Case: PG-TO220-3
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Power dissipation: 107W
Drain current: 13.3A
Drain-source voltage: 250V
Pulsed drain current: 68A
auf Bestellung 482 Stücke:
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27+2.67 EUR
29+2.55 EUR
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ISC011N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC011N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6d6d80982 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 1.1mΩ
Power dissipation: 96W
Drain current: 100A
Drain-source voltage: 30V
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ISC019N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 1.9mΩ
Power dissipation: 69W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ISC026N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC026N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8afe9860988 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 48W; PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 2.6mΩ
Power dissipation: 48W
Drain current: 100A
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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IRF2805STRLPBF IRF2805STRLPBF INFINEON TECHNOLOGIES irf2805spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 135A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 INFINEON TECHNOLOGIES IPB015N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 1000 Stücke:
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16+4.48 EUR
1000+3.16 EUR
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BSB015N04NX3GXUMA1 BSB015N04NX3GXUMA1 INFINEON TECHNOLOGIES BSB015N04NX3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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IPB015N04LGATMA1 IPB015N04LGATMA1 INFINEON TECHNOLOGIES IPB015N04LG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB015N04NGATMA1 IPB015N04NGATMA1 INFINEON TECHNOLOGIES IPB015N04NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRF9317TRPBF IRF9317TRPBF INFINEON TECHNOLOGIES irf9317pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IRF7317TRPBF IRF7317TRPBF INFINEON TECHNOLOGIES irf7317pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
On-state resistance: 29/58mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar
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ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 INFINEON TECHNOLOGIES ICE2PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 333 Stücke:
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59+1.22 EUR
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IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES IPP60R385CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPB60R385CPATMA1 IPB60R385CPATMA1 INFINEON TECHNOLOGIES IPB60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
Produkt ist nicht verfügbar
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IPD60R385CPATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252
Produkt ist nicht verfügbar
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IPL60R385CPAUMA1 IPL60R385CPAUMA1 INFINEON TECHNOLOGIES IPL60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-VSON-4
Produkt ist nicht verfügbar
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IPA95R750P7XKSA1 IPA95R750P7XKSA1 INFINEON TECHNOLOGIES IPA95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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T560N14TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Case: BG-T4814K0-1
Type of thyristor: hockey-puck
Features of semiconductor devices: phase control thyristor (PCT)
Mounting: Press-Pack
Gate current: 200mA
Load current: 559A
Max. load current: 809A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 8kA
Kind of package: in-tray
Produkt ist nicht verfügbar
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IFX007TAUMA1
+1
 		IFX007TAUMA1 INFINEON TECHNOLOGIES IFX007T.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: 9A
Number of channels: 1
Mounting: SMD
On-state resistance: 10mΩ
Operating temperature: -40...150°C
Application: DC motors
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.46 EUR
27+2.7 EUR
28+2.63 EUR
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IPB031N08N5ATMA1 IPB031N08N5ATMA1 INFINEON TECHNOLOGIES IPB031N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDH06G65C5 IDH06G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; 62W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 54A
Leakage current: 1.2µA
Power dissipation: 62W
Kind of package: tube
Heatsink thickness: 1.17...137mm
auf Bestellung 51 Stücke:
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46+1.57 EUR
48+1.5 EUR
51+1.4 EUR
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327HTSA1 INFINEON TECHNOLOGIES BAS4002ARPPE6327.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Features of semiconductor devices: Schottky
auf Bestellung 2527 Stücke:
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313+0.23 EUR
334+0.21 EUR
374+0.19 EUR
500+0.18 EUR
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BAS4004E6327HTSA1 BAS4004E6327HTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 3125 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
532+0.13 EUR
582+0.12 EUR
800+0.089 EUR
1038+0.069 EUR
1166+0.061 EUR
3000+0.055 EUR
Mindestbestellmenge: 417
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IRF9389TRPBF IRF9389TRPBF.pdf
IRF9389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 22 Stücke:
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Anzahl Preis
22+3.25 EUR
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IRF9310TRPBF irf9310pbf.pdf
IRF9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
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IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
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BSS159NH6906XTSA1 Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 1.7Ω
Drain-source voltage: 60V
Application: automotive industry
Case: SOT23
Produkt ist nicht verfügbar
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BSP89H6327XTSA1 BSP89H6327XTSA1.pdf
BSP89H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain current: 0.35A
Power dissipation: 1.8W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
175+0.41 EUR
198+0.36 EUR
Mindestbestellmenge: 143
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IRS2005STRPBF infineon-irs2005s-m-datasheet-en.pdf
IRS2005STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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BSC057N08NS3GATMA1 BSC057N08NS3G-DTE.pdf
BSC057N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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6EDL04I06PTXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 13...17.5V
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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6EDL04N02PR 6EDL04N02PR.pdf
6EDL04N02PR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...17.5V
Voltage class: 200V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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CY8CKIT-062S2-43012 Infineon-CY8CKIT-062S2-43012_PSoC_62S2_Wi-Fi_BT_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01c8f11927&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8CKIT-062S2-43012
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+216.32 EUR
Mindestbestellmenge: 3
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IPB018N06NF2SATMA1 Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 187A; 188W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 187A
Power dissipation: 188W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Technology: SiC
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.3 EUR
Mindestbestellmenge: 800
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IPD028N06NF2SATMA1 Infineon-IPD028N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8386267f0183a84489a82df3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 60V; 139A; 150W; PG-TO252-3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 139A
Power dissipation: 150W
Case: PG-TO252-3
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 102nC
Kind of channel: enhancement
Technology: SiC
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.73 EUR
Mindestbestellmenge: 2000
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IRS4426SPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -3.3...2.3A
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
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BSC080N03MSGATMA1 BSC080N03MSG-DTE.pdf
BSC080N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1066 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
144+0.5 EUR
155+0.46 EUR
250+0.44 EUR
500+0.4 EUR
Mindestbestellmenge: 107
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ICE3B1565JFKLA1 Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
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IR2102SPBF description ir2101_2102.pdf
IR2102SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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BSC066N06NSATMA1 BSC066N06NS-DTE.pdf
BSC066N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR15N20DTRPBF IRFR15N20DTRPBF.pdf
IRFR15N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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SPD02N80C3ATMA1 Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; 42W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Gate charge: 12nC
On-state resistance: 2.7Ω
Drain current: 2A
Power dissipation: 42W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB039N10N3GATMA1 IPB039N10N3G-DTE.pdf
IPB039N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR120ZTRPBF irfr120zpbf.pdf
IRFR120ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 8.7A
Power dissipation: 35W
Drain-source voltage: 100V
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRFR4105TRPBF irfr4105pbf.pdf
IRFR4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR4105ZTRL auirfr4105.pdf
AUIRFR4105ZTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCX53H6327XTSA1 BCX53.pdf
BCX53H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
247+0.29 EUR
Mindestbestellmenge: 247
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IDP40E65D2XKSA1 IDP40E65D2XKSA1.pdf
IDP40E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; Ifsm: 250A; TO220-2; 36ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220-2
Reverse recovery time: 36ns
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
40+1.83 EUR
Mindestbestellmenge: 33
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SPA06N80C3
SPA06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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SPP06N80C3 description SPP06N80C3.pdf
SPP06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
28+2.56 EUR
34+2.16 EUR
50+1.99 EUR
Mindestbestellmenge: 26
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SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL2203NSTRLPBF irl2203nspbf.pdf
IRL2203NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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1EDI05I12AFXUMA1 1EDIxxI12AF.pdf
1EDI05I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Output current: -0.5...0.5A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
auf Bestellung 2090 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
42+1.73 EUR
50+1.47 EUR
100+1.37 EUR
250+1.29 EUR
Mindestbestellmenge: 38
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IRLL2705TRPBF irll2705pbf.pdf
IRLL2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5617 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
115+0.62 EUR
152+0.47 EUR
185+0.39 EUR
217+0.33 EUR
243+0.29 EUR
500+0.28 EUR
Mindestbestellmenge: 74
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IRLL2703TRPBF IRSDS06555-1.pdf?t.download=true&u=5oefqw
IRLL2703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 45mΩ
Gate-source voltage: ±16V
Pulsed drain current: 16A
Produkt ist nicht verfügbar
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IRLML2803TRPBF irlml2803.pdf
IRLML2803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 9855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
275+0.26 EUR
304+0.24 EUR
391+0.18 EUR
443+0.16 EUR
538+0.13 EUR
642+0.11 EUR
1000+0.093 EUR
3000+0.082 EUR
Mindestbestellmenge: 209
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IRLML5103TRPBF irlml5103pbf.pdf
IRLML5103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1604 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
248+0.29 EUR
447+0.16 EUR
667+0.11 EUR
1000+0.092 EUR
Mindestbestellmenge: 179
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IRLML6346TRPBF irlml6346pbf.pdf
IRLML6346TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.9nC
On-state resistance: 80mΩ
Gate-source voltage: ±12V
Pulsed drain current: 17A
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
239+0.3 EUR
341+0.21 EUR
397+0.18 EUR
Mindestbestellmenge: 162
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IRLML6246TRPBF irlml6246pbf.pdf
IRLML6246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3.5nC
On-state resistance: 46mΩ
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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IPP011N04NF2SAKMA1 Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Case: PG-TO220-3
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Power dissipation: 107W
Drain current: 13.3A
Drain-source voltage: 250V
Pulsed drain current: 68A
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
29+2.55 EUR
33+2.2 EUR
Mindestbestellmenge: 27
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ISC011N03L5SATMA1 Infineon-ISC011N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6d6d80982
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 1.1mΩ
Power dissipation: 96W
Drain current: 100A
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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ISC019N03L5SATMA1 Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 1.9mΩ
Power dissipation: 69W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ISC026N03L5SATMA1 Infineon-ISC026N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8afe9860988
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 48W; PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 2.6mΩ
Power dissipation: 48W
Drain current: 100A
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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IRF2805STRLPBF irf2805spbf.pdf
IRF2805STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 135A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPB015N08N5ATMA1 IPB015N08N5-DTE.pdf
IPB015N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
1000+3.16 EUR
Mindestbestellmenge: 16
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BSB015N04NX3GXUMA1 BSB015N04NX3G-DTE.pdf
BSB015N04NX3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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IPB015N04LGATMA1 IPB015N04LG.pdf
IPB015N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB015N04NGATMA1 IPB015N04NG-DTE.pdf
IPB015N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRF9317TRPBF irf9317pbf.pdf
IRF9317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IRF7317TRPBF description irf7317pbf.pdf
IRF7317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
On-state resistance: 29/58mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N/P-MOSFET
Produkt ist nicht verfügbar
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ICE2PCS01GXUMA1 ICE2PCS01G.pdf
ICE2PCS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 333 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
Mindestbestellmenge: 59
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IPP60R385CPXKSA1 IPP60R385CP-DTE.pdf
IPP60R385CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPB60R385CPATMA1 IPB60R385CP-DTE.pdf
IPB60R385CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
Produkt ist nicht verfügbar
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IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252
Produkt ist nicht verfügbar
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IPL60R385CPAUMA1 IPL60R385CP-DTE.pdf
IPL60R385CPAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-VSON-4
Produkt ist nicht verfügbar
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IPA95R750P7XKSA1 IPA95R750P7.pdf
IPA95R750P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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T560N14TOFXPSA1 T560N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Case: BG-T4814K0-1
Type of thyristor: hockey-puck
Features of semiconductor devices: phase control thyristor (PCT)
Mounting: Press-Pack
Gate current: 200mA
Load current: 559A
Max. load current: 809A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 8kA
Kind of package: in-tray
Produkt ist nicht verfügbar
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IFX007TAUMA1 IFX007T.pdf
IFX007TAUMA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: 9A
Number of channels: 1
Mounting: SMD
On-state resistance: 10mΩ
Operating temperature: -40...150°C
Application: DC motors
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
27+2.7 EUR
28+2.63 EUR
Mindestbestellmenge: 21
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IPB031N08N5ATMA1 IPB031N08N5-DTE.pdf
IPB031N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDH06G65C5
IDH06G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; 62W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 54A
Leakage current: 1.2µA
Power dissipation: 62W
Kind of package: tube
Heatsink thickness: 1.17...137mm
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
48+1.5 EUR
51+1.4 EUR
Mindestbestellmenge: 46
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327.pdf
BAS4002ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Features of semiconductor devices: Schottky
auf Bestellung 2527 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
334+0.21 EUR
374+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 313
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BAS4004E6327HTSA1 BAS4004E6327HTSA1.pdf
BAS4004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 3125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
532+0.13 EUR
582+0.12 EUR
800+0.089 EUR
1038+0.069 EUR
1166+0.061 EUR
3000+0.055 EUR
Mindestbestellmenge: 417
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