Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149671) > Seite 2479 nach 2495
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPD020N03LF2SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IPD020N03LF2SATMA1 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IRLR4132TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IPD200N15N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W Power dissipation: 150W Case: PG-TO252-3 Mounting: SMD Drain-source voltage: 150V Drain current: 40A On-state resistance: 20mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IRF7821TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.6A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2.5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRF7821TRPBFXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.6A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IRF7324TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SPD08N50C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: SPD08N50C3ATMA1 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
PVT422S-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IR2181STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IPB017N10N5LFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
![]() |
IRF9389TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6.8/-4.6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27/64mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1110 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSD235CH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.95/-0.53A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±12V On-state resistance: 0.415/1.221Ω Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 2 |
auf Bestellung 2894 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
CY8C20546A-24PVXI | INFINEON TECHNOLOGIES |
![]() Description: IC: PSoC microcontroller Type of integrated circuit: PSoC microcontroller |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
SPA11N80C3XKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 492 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
BSS169IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
![]() |
TZ240N36KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 3.6kV Load current: 240A Case: BG-PB501-1 Max. forward voltage: 3.43V Max. forward impulse current: 6.1kA Gate current: 300mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRFP4110PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BF2040E6814HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 8V Drain current: 40mA Power dissipation: 0.2W Case: SOT143 Gate-source voltage: ±10V Kind of package: reel; tape Frequency: 800MHz Kind of channel: depletion Electrical mounting: SMT Open-loop gain: 23dB Features of semiconductor devices: dual gate |
auf Bestellung 8210 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IPP60R180C7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 68W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 448 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IPB60R180P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 25nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IPW60R180C7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 68W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IPW60R180P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPP60R180P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 72W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 53A Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IPZA60R180P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPD60R180P7SE8228AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IPAN60R180P7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
![]() |
IPB010N06NATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7 Mounting: SMD Drain-source voltage: 60V Drain current: 180A On-state resistance: 1mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TO263-7 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
TT400N26KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.6kV Load current: 400A Case: BG-PB60-1 Max. forward voltage: 1.88V Max. forward impulse current: 13kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BAR6302LE6327XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: BAR6302LE6327XTMA1 |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
BAR6305WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching Type of diode: switching |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
BAR6306WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching Type of diode: switching |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
BAR6402ELE6327XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: BAR6402ELE6327XTMA1 |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
BAR6404WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching Type of diode: switching |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
BAR6405E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching Type of diode: switching |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
BAR6406E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching Type of diode: switching |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IRS2101STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IRFP4768PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC Type of transistor: N-MOSFET Case: TO247AC Drain-source voltage: 250V Drain current: 66A On-state resistance: 17.5mΩ Power dissipation: 520W Polarisation: unipolar Kind of package: tube Gate charge: 180nC Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 370A Mounting: THT |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IRFP4768PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
BGA420H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
ICE3AR10080JZXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC Type of integrated circuit: PMIC |
auf Bestellung 1920 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
CY8C6144LQI-S4F82 | INFINEON TECHNOLOGIES |
![]() Description: CY8C6144LQI-S4F82 |
auf Bestellung 1560 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IRLR3636TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IRFP3077PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 200A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
ITS4200SMEOHUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-4 Case: SOT223-4 Mounting: SMD Kind of package: reel; tape Technology: Industrial PROFET Kind of integrated circuit: high-side Supply voltage: 11...45V DC On-state resistance: 0.15Ω Operating temperature: -40...125°C Output current: 0.7A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
ITS4200SMENHUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-4 Case: SOT223-4 Mounting: SMD Kind of package: reel; tape Technology: Industrial PROFET Kind of integrated circuit: high-side Supply voltage: 5...34V DC On-state resistance: 0.16Ω Operating temperature: -40...125°C Output current: 0.7A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
ITS4200SSJDXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; PG-DSO-8 Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Technology: Industrial PROFET Kind of integrated circuit: high-side Supply voltage: 6...52V DC On-state resistance: 0.15Ω Operating temperature: -40...125°C Output current: 1.2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
ITS42008SBDAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 8; N-Channel; SMD; PG-DSO-36 Case: PG-DSO-36 Mounting: SMD Kind of package: reel; tape Power dissipation: 3.3W Technology: Industrial PROFET Kind of integrated circuit: high-side Turn-off time: 0.1ms Supply voltage: 11...45V DC On-state resistance: 0.2Ω Turn-on time: 150µs Operating temperature: -40...125°C Output current: 0.7A Type of integrated circuit: power switch Number of channels: 8 Kind of output: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRF150P221AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 186A Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
TLD1314ELXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Technology: Litix™ Case: PG-SSOP-14-EP Output current: 0.12A Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V DC Protection: overheating OTP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BSZ100N06NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Power dissipation: 36W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IR2183STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IRS2113STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
![]() |
SPD15P10PGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 128W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
FP15R12W1T4_B3 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Case: AG-EASY1B-1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 130W Mechanical mounting: screw Technology: EasyPIM™ 1B |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
IPC60SR045CPX2SA1 | INFINEON TECHNOLOGIES |
Category: Transistors - Unclassified Description: IPC60SR045CPX2SA1 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IPB160N04S4H1ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
PVT212SPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
![]() |
IRLHS6376TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2 Case: PQFN2X2 Mounting: SMD Kind of package: reel Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: 30V Drain current: 3.6A Type of transistor: N-MOSFET Power dissipation: 1.5W |
auf Bestellung 1517 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
IR11682STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IR11682STRPBF |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
![]() |
IPA80R1K0CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
|
IPD020N03LF2SATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPD020N03LF2SATMA1
Category: Transistors - Unclassified
Description: IPD020N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 0.69 EUR |
IRLR4132TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 0.52 EUR |
IPD200N15N3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 150V
Drain current: 40A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 150V
Drain current: 40A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7821TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7821TRPBFXTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7324TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPD08N50C3ATMA1 |
![]() |
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.79 EUR |
PVT422S-TPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
750+ | 8.77 EUR |
IR2181STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.89 EUR |
IPB017N10N5LFATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 5.06 EUR |
IRF9389TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1110 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
134+ | 0.53 EUR |
206+ | 0.35 EUR |
218+ | 0.33 EUR |
500+ | 0.32 EUR |
BSD235CH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2894 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
202+ | 0.35 EUR |
242+ | 0.30 EUR |
374+ | 0.19 EUR |
447+ | 0.16 EUR |
736+ | 0.10 EUR |
782+ | 0.09 EUR |
CY8C20546A-24PVXI |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller
Type of integrated circuit: PSoC microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller
Type of integrated circuit: PSoC microcontroller
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 8.38 EUR |
90+ | 7.54 EUR |
SPA11N80C3XKSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 492 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 2.06 EUR |
BSS169IXTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.07 EUR |
TZ240N36KOF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB501-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 3.6kV; 240A; BG-PB501-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 3.6kV
Load current: 240A
Case: BG-PB501-1
Max. forward voltage: 3.43V
Max. forward impulse current: 6.1kA
Gate current: 300mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP4110PBFXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BF2040E6814HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 8V
Drain current: 40mA
Power dissipation: 0.2W
Case: SOT143
Gate-source voltage: ±10V
Kind of package: reel; tape
Frequency: 800MHz
Kind of channel: depletion
Electrical mounting: SMT
Open-loop gain: 23dB
Features of semiconductor devices: dual gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 8V
Drain current: 40mA
Power dissipation: 0.2W
Case: SOT143
Gate-source voltage: ±10V
Kind of package: reel; tape
Frequency: 800MHz
Kind of channel: depletion
Electrical mounting: SMT
Open-loop gain: 23dB
Features of semiconductor devices: dual gate
auf Bestellung 8210 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
215+ | 0.34 EUR |
310+ | 0.23 EUR |
425+ | 0.17 EUR |
450+ | 0.16 EUR |
3000+ | 0.15 EUR |
IPP60R180C7XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.39 EUR |
19+ | 3.89 EUR |
22+ | 3.36 EUR |
23+ | 3.17 EUR |
IPB60R180P7ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R180C7XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R180P7XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R180P7XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPZA60R180P7XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD60R180P7SE8228AUMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.63 EUR |
IPAN60R180P7SXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 1.10 EUR |
IPB010N06NATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Mounting: SMD
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Mounting: SMD
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-7
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TT400N26KOF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAR6302LE6327XTMA1 |
![]() |
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15000+ | 0.09 EUR |
BAR6305WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.10 EUR |
BAR6306WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.10 EUR |
BAR6402ELE6327XTMA1 |
![]() |
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15000+ | 0.09 EUR |
BAR6404WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.14 EUR |
BAR6405E6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.07 EUR |
BAR6406E6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.08 EUR |
IRS2101STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.82 EUR |
IRFP4768PBFXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Case: TO247AC
Drain-source voltage: 250V
Drain current: 66A
On-state resistance: 17.5mΩ
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 370A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Case: TO247AC
Drain-source voltage: 250V
Drain current: 66A
On-state resistance: 17.5mΩ
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 370A
Mounting: THT
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.62 EUR |
23+ | 3.19 EUR |
24+ | 3.02 EUR |
IRFP4768PBFXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 3.50 EUR |
BGA420H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: Transistor: NPN
Type of transistor: NPN
Category: SMD operational amplifiers
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.57 EUR |
ICE3AR10080JZXKLA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.60 EUR |
CY8C6144LQI-S4F82 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C6144LQI-S4F82
Category: Integrated circuits - Unclassified
Description: CY8C6144LQI-S4F82
auf Bestellung 1560 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
260+ | 6.74 EUR |
IRLR3636TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.66 EUR |
IRFP3077PBFXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ITS4200SMEOHUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 11...45V DC
On-state resistance: 0.15Ω
Operating temperature: -40...125°C
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 11...45V DC
On-state resistance: 0.15Ω
Operating temperature: -40...125°C
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ITS4200SMENHUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Operating temperature: -40...125°C
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Operating temperature: -40...125°C
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ITS4200SSJDXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 6...52V DC
On-state resistance: 0.15Ω
Operating temperature: -40...125°C
Output current: 1.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 6...52V DC
On-state resistance: 0.15Ω
Operating temperature: -40...125°C
Output current: 1.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ITS42008SBDAUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 8; N-Channel; SMD; PG-DSO-36
Case: PG-DSO-36
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 3.3W
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Turn-off time: 0.1ms
Supply voltage: 11...45V DC
On-state resistance: 0.2Ω
Turn-on time: 150µs
Operating temperature: -40...125°C
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 8
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 8; N-Channel; SMD; PG-DSO-36
Case: PG-DSO-36
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 3.3W
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Turn-off time: 0.1ms
Supply voltage: 11...45V DC
On-state resistance: 0.2Ω
Turn-on time: 150µs
Operating temperature: -40...125°C
Output current: 0.7A
Type of integrated circuit: power switch
Number of channels: 8
Kind of output: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF150P221AKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 186A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 186A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLD1314ELXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSZ100N06NSATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2183STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.89 EUR |
IRS2113STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 2.19 EUR |
SPD15P10PGBTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FP15R12W1T4_B3 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Mechanical mounting: screw
Technology: EasyPIM™ 1B
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 44.62 EUR |
IPC60SR045CPX2SA1 |
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 12.37 EUR |
IPB160N04S4H1ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.54 EUR |
PVT212SPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 9.74 EUR |
IRLHS6376TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 1.5W
auf Bestellung 1517 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.80 EUR |
128+ | 0.56 EUR |
168+ | 0.43 EUR |
258+ | 0.28 EUR |
274+ | 0.26 EUR |
1000+ | 0.25 EUR |
IR11682STRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: IR11682STRPBF
Category: Integrated circuits - Unclassified
Description: IR11682STRPBF
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 2.49 EUR |
IPA80R1K0CEXKSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.50 EUR |
40+ | 1.82 EUR |
53+ | 1.37 EUR |
55+ | 1.30 EUR |