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BAR6403WE6327HTSA1 BAR6403WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4 Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 1845 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
618+0.12 EUR
667+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 334
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BAR6404E6327HTSA1 BAR6404E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A24E9F32E65820&compId=BAR64-04.pdf?ci_sign=f8b366674ccb5015c2234e8f26366cf079c3def1 Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: double series
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
296+0.24 EUR
384+0.19 EUR
573+0.12 EUR
887+0.081 EUR
937+0.076 EUR
1000+0.073 EUR
Mindestbestellmenge: 193
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BAR66E6327HTSA1 BAR66E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99E9452B4A9E4B820&compId=bar66series.pdf?ci_sign=0c78a33a6f68947f2201c382aa99c2ec4e873f38 Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.2V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 12A
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN
auf Bestellung 4520 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
278+0.26 EUR
391+0.18 EUR
455+0.16 EUR
481+0.15 EUR
Mindestbestellmenge: 193
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BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6 Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 1045 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
405+0.18 EUR
460+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 365
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BAR6303WE6327HTSA1 BAR6303WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE253C84036F3D7&compId=BAR63xx_ser.pdf?ci_sign=ce0958481adbf0cb48c9a0e6e33719e686dc0f89 Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 2619 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
311+0.23 EUR
412+0.17 EUR
635+0.11 EUR
827+0.087 EUR
910+0.079 EUR
Mindestbestellmenge: 209
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BC817UPNE6327HTSA1 BC817UPNE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58AA86A9198D28469&compId=BC817UPNE6327.pdf?ci_sign=5f649fabee6d5d3ecff99d79dd90e2d88f21a23a Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 7003 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
215+0.33 EUR
275+0.26 EUR
404+0.18 EUR
428+0.17 EUR
Mindestbestellmenge: 136
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB81B27E263A469&compId=BAS3007ARPPE6327.pdf?ci_sign=b5ed67fdce37abb4658c35aaf90648a7216714d2 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 30V
Load current: 0.9A
Max. forward impulse current: 5A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
auf Bestellung 4455 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
156+0.46 EUR
182+0.39 EUR
239+0.3 EUR
253+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 125
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB820F651F00469&compId=BAS4002ARPPE6327.pdf?ci_sign=129a63ea239a763a7e4e19d6fcee10919cb6da76 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
166+0.43 EUR
239+0.3 EUR
252+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 112
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BB640E6327HTSA1 BB640E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9999C75489C9E27&compId=BB640E-DTE.pdf?ci_sign=d61173df73327382dcb8cc40fc10b50674b2bb14 Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.8...76pF
auf Bestellung 2323 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
252+0.28 EUR
385+0.19 EUR
407+0.18 EUR
695+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 173
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SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58AA872AF02448469&compId=SMBTA06UPNE6327.pdf?ci_sign=3ca9fa8b24d5c20f16b1d9b25e78ef3bb53a749e Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
239+0.3 EUR
371+0.19 EUR
516+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 148
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IRLML9303TRPBF IRLML9303TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C9FCDCD65F1A303005056AB0C4F&compId=irlml9303pbf.pdf?ci_sign=25ae6857484c7ee0d56fb5294320af01faa2769b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1444 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
315+0.23 EUR
451+0.16 EUR
511+0.14 EUR
758+0.094 EUR
807+0.089 EUR
Mindestbestellmenge: 186
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IPD70R360P7SAUMA1 IPD70R360P7SAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1A620EEC88259&compId=IPD70R360P7S.pdf?ci_sign=1495246343ec5ba186668327700251c676370953 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1611 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
81+0.88 EUR
93+0.78 EUR
107+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 68
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ICL8001GXUMA1 ICL8001GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDC0A24EAB91E27&compId=ICL8001G-DTE.pdf?ci_sign=8c35d02c215ab6ed66d7d108d76f80643772cc2f Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Integrated circuit features: phase-cut dimming; soft-start function
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Topology: flyback
Mounting: SMD
Case: PG-DSO-8
Operating voltage: 10.5...26V DC
Type of integrated circuit: driver
Number of channels: 1
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
58+1.24 EUR
64+1.13 EUR
67+1.07 EUR
100+1.04 EUR
Mindestbestellmenge: 51
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IR1161LTRPBF IR1161LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FAF5A857158259&compId=IR1161LTRPBF.pdf?ci_sign=9552f004c7f1bcc1886ae1975d8eecd6d4d90f75 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 590mW
Supply voltage: 4.75...18V DC
Output current: -2.5...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
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IR11688STRPBF IR11688STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FAF7AC44F86259&compId=IR11688STRPBF.pdf?ci_sign=ee780d8bdb01f8fa87dd259f66e77f18d4356584 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 4.75...18V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR1169STRPBF IR1169STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBF87D0F3BF5EA&compId=IR1169STRPBF.pdf?ci_sign=f2290a7105ab761b1e20b2c47711f7541b33ac9d Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 11...19V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
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ICE5QR1070AZXKLA1
+2
 		ICE5QR1070AZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Power: 58/32W
Input voltage: 80...265V
Output current: 0.4A
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Breakdown voltage: 700V
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Operating voltage: 10...25.5V DC
Frequency: 20kHz
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.97 EUR
Mindestbestellmenge: 73
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BFP740H6327XTSA1 BFP740H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD90E3A3FC1DD6E0D3&compId=BFP740.pdf?ci_sign=ce7cc8cf4d74db6dfea95f584e1a2362c567feed Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Kind of transistor: HBT; RF
Frequency: 44GHz
Collector-emitter voltage: 13V
Current gain: 160...400
Collector current: 45mA
Type of transistor: NPN
Power dissipation: 0.16W
Polarisation: bipolar
Technology: SiGe:C
auf Bestellung 2531 Stücke:
Lieferzeit 14-21 Tag (e)
198+0.36 EUR
221+0.32 EUR
232+0.31 EUR
249+0.29 EUR
500+0.28 EUR
Mindestbestellmenge: 198
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BTS50055-1TMB BTS50055-1TMB INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698831673540469&compId=BTS50055-1TMB.pdf?ci_sign=51035787213271d893d95d4f122fa627c7b33776 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-11
Supply voltage: 5...34V DC
On-state resistance: 4.4mΩ
Output current: 55A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
8+10.14 EUR
13+5.51 EUR
14+5.21 EUR
Mindestbestellmenge: 8
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BTS50080-1TMB BTS50080-1TMB INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869888DFBE586469&compId=BTS50080-1TMB.pdf?ci_sign=dd4acc5f8af1b9f7b8a62d693a1b9e6c2f5af730 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Supply voltage: 5.5...38V DC
On-state resistance: 7mΩ
Output current: 9.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.89 EUR
13+5.65 EUR
14+5.33 EUR
Mindestbestellmenge: 10
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BFR182WH6327XTSA1 BFR182WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC24251A45713D7&compId=BFR182WH6327.pdf?ci_sign=fc912695d8434b60527e392bdece0c30bc9f5025 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Kind of package: reel; tape
Collector-emitter voltage: 12V
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT323
Frequency: 8GHz
auf Bestellung 1312 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
562+0.13 EUR
642+0.11 EUR
705+0.1 EUR
758+0.094 EUR
834+0.086 EUR
878+0.082 EUR
Mindestbestellmenge: 385
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BCP5616H6327XTSA1 BCP5616H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B2601505A469&compId=BCP5616H6327XTSA1.pdf?ci_sign=4c01b3c5793fee0bfbaf9bdb8dbb9bda5a4b9539 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
220+0.33 EUR
245+0.29 EUR
320+0.23 EUR
335+0.21 EUR
Mindestbestellmenge: 220
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BCX53H6327XTSA1 BCX53H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C52B239147E469&compId=BCX53.pdf?ci_sign=06038f92536883fb5f048a4ed3d4e9113ac14b8b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 556 Stücke:
Lieferzeit 14-21 Tag (e)
248+0.29 EUR
285+0.25 EUR
361+0.2 EUR
382+0.19 EUR
Mindestbestellmenge: 248
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BCX5610H6327XTSA1 BCX5610H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587FE96FEC45A6469&compId=BCX56H6327XTSA1.pdf?ci_sign=52af526ba3cf213dc7c315370759944bc823dfb4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)
220+0.33 EUR
250+0.29 EUR
325+0.22 EUR
345+0.21 EUR
Mindestbestellmenge: 220
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BCX56H6327XTSA1 BCX56H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587FE96FEC45A6469&compId=BCX56H6327XTSA1.pdf?ci_sign=52af526ba3cf213dc7c315370759944bc823dfb4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IRF5802TRPBF IRF5802TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F65CA91D160F1A303005056AB0C4F&compId=irf5802pbf.pdf?ci_sign=fc0c972f70c588d11a57b7d4ca5bf38e2b7f9fb6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1773 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
170+0.42 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 117
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IRLMS2002TRPBF IRLMS2002TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227CF15C848FF1A303005056AB0C4F&compId=irlms2002pbf.pdf?ci_sign=582d4397a97dbf01cfb70f72bdc441e378316d1a description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9133F743C511CC&compId=BSL207SPH6327XTSA1-DTE.pdf?ci_sign=3b837dc0c8d564b801efd309746191c0e1aca363 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
On-state resistance: 41mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -6A
auf Bestellung 2861 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
108+0.67 EUR
216+0.33 EUR
228+0.31 EUR
Mindestbestellmenge: 95
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IR2132JPBF IR2132JPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Power: 2W
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IR2135JPBF IR2135JPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 0.6/1.2kV
Case: PLCC44
Power: 2W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.22 EUR
7+10.8 EUR
Mindestbestellmenge: 5
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IR2233JPBF IR2233JPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Mounting: SMD
Operating temperature: -40...125°C
Case: PLCC44
Power: 2W
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.67 EUR
7+10.31 EUR
8+9.75 EUR
Mindestbestellmenge: 5
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IRFL4310TRPBF IRFL4310TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BDE20E8924F1A303005056AB0C4F&compId=irfl4310pbf.pdf?ci_sign=a876a1102106435a0080d1318abe3e00ee948262 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFB7434PBF IRFB7434PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA7DC604355EA&compId=IRFB7434PBF.pdf?ci_sign=de22a06d3fea89ee22bebabfc0e049a455f48e14 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.35 EUR
29+2.49 EUR
45+1.62 EUR
47+1.53 EUR
Mindestbestellmenge: 22
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IR2181SPBF IR2181SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD34A5F1A6F5005056AB5A8F&compId=ir2181.pdf?ci_sign=c5a6339eac545a9ba06e6dda4e6c0792928b2542 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.93 EUR
20+3.58 EUR
Mindestbestellmenge: 15
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SPW20N60S5 SPW20N60S5 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C03411041C74A&compId=SPW20N60S5.pdf?ci_sign=589384c8d611bc972143bda64550ceff9610d199 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.74 EUR
12+6.02 EUR
13+5.69 EUR
Mindestbestellmenge: 9
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IRLZ34NPBF IRLZ34NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E266EF1A6F5005056AB5A8F&compId=irlz34n.pdf?ci_sign=baf8308bc900f23bfeaeda660831721df1f0c79c description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
73+0.99 EUR
162+0.44 EUR
171+0.42 EUR
Mindestbestellmenge: 41
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IRLZ34NSTRLPBF INFINEON TECHNOLOGIES irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFP3006PBF IRFP3006PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE5E61C9395EA&compId=IRFP3006PBF.pdf?ci_sign=3f9de887d18eac973e5482dc6f05ce8c2ff62630 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.75 EUR
18+3.99 EUR
19+3.79 EUR
Mindestbestellmenge: 16
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IRFP3415PBF IRFP3415PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAF0F1A6F5005056AB5A8F&compId=irfp3415.pdf?ci_sign=7dce4703a8017664ea463bf6fafd149e008ced7d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.2 EUR
Mindestbestellmenge: 17
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IRFP3703PBF IRFP3703PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAFEF1A6F5005056AB5A8F&compId=irfp3703.pdf?ci_sign=bc68c2fbece183b5370d800cc11ba437ce67f660 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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BSP129H6327XTSA1 BSP129H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A78558D0C55E5E27&compId=BSP129H6327-DTE.pdf?ci_sign=fdfeb4a848e9de3029b705fc4ac90ccf3288a56b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: SOT223
auf Bestellung 1659 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
94+0.77 EUR
147+0.49 EUR
155+0.46 EUR
250+0.45 EUR
500+0.44 EUR
Mindestbestellmenge: 77
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IRS2304SPBF IRS2304SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7E9BF1A6F5005056AB5A8F&compId=irs2304spbf.pdf?ci_sign=326f71e93afb3bc0a893f0a8336d053fc6daee54 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 185ns
Power: 625mW
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
35+2.1 EUR
45+1.62 EUR
46+1.56 EUR
Mindestbestellmenge: 25
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BB535E7904HTSA1 BB535E7904HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999B05181EEDE27&compId=BB535-DTE.pdf?ci_sign=a4fb6cf5ef18ed8b38aab6c8baa5d1a7cb263a48 Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2...20pF
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
295+0.24 EUR
382+0.19 EUR
420+0.17 EUR
Mindestbestellmenge: 218
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BB85702VH7902XTSA1 BB85702VH7902XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAAB5B5A3168B40CE&compId=BB837_BB857.pdf?ci_sign=17620b0416a335ead6bd0f7a08dcc207a84a3e6a Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Mounting: SMD
Case: SC79
Capacitance: 0.45...7.2pF
Max. off-state voltage: 30V
Load current: 20mA
Semiconductor structure: single diode
Leakage current: 0.2µA
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
192+0.37 EUR
360+0.2 EUR
382+0.19 EUR
Mindestbestellmenge: 148
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BAR6302VH6327XTSA1 BAR6302VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE253C84036F3D7&compId=BAR63xx_ser.pdf?ci_sign=ce0958481adbf0cb48c9a0e6e33719e686dc0f89 Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Produkt ist nicht verfügbar
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BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA543505C011C&compId=BSC123N08NS3G-DTE.pdf?ci_sign=1d5e204586f07d92fb2c8f8a1f997c1b7905496e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 55A
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
auf Bestellung 1291 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.7 EUR
60+1.2 EUR
86+0.84 EUR
90+0.8 EUR
500+0.77 EUR
Mindestbestellmenge: 43
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BSC160N10NS3GATMA1 BSC160N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DAF9708D3411C&compId=BSC160N10NS3G-DTE.pdf?ci_sign=40b99f03d0385a774315a98299c6b275c55d6333 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
Power dissipation: 60W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 42A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC190N15NS3GATMA1 BSC190N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC604BDBE8C11C&compId=BSC190N15NS3G-DTE.pdf?ci_sign=198571536f486da766f745ce415f44d0d9f21d86 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 150V
Drain current: 50A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
Mindestbestellmenge: 36
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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4 Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 2289 Stücke:
Lieferzeit 14-21 Tag (e)
275+0.26 EUR
455+0.16 EUR
500+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 275
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BAR6405WH6327XTSA1 BAR6405WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4 Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Mounting: SMD
Case: SOT323
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: common cathode; double
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 4115 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
264+0.27 EUR
385+0.19 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 179
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IRF250P225 IRF250P225 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5E6B7DDCB8A18&compId=IRF250P225.pdf?ci_sign=a24623db79b4550212f4261372c78bcb6e01d720 Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Mounting: THT
Drain-source voltage: 250V
Drain current: 49A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Gate charge: 96nC
Technology: StrongIRFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO247AC
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.74 EUR
12+6.18 EUR
13+5.83 EUR
Mindestbestellmenge: 10
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IRFZ46NLPBF IRFZ46NLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055F6F1A6F5005056AB5A8F&compId=irfz46ns.pdf?ci_sign=823535b9df98d9e91cdfca84dfbe6e3ff87b06ed description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ46NPBF IRFZ46NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055FDF1A6F5005056AB5A8F&compId=irfz46n.pdf?ci_sign=93c1971f002e2dd0aa19b059e611e1bf772c02d6 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSB165N15NZ3GXUMA1 BSB165N15NZ3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB14E6620611C&compId=BSB165N15NZ3G-DTE.pdf?ci_sign=dd418a760ded1deee6217633abfb617c5e3612cb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI1310NPBF IRFI1310NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284B41F1A6F5005056AB5A8F&compId=irfi1310n.pdf?ci_sign=01e2e2c9f0e71c2ff0c5bc018c7724f0acccbe52 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
35+2.1 EUR
39+1.86 EUR
45+1.62 EUR
47+1.53 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4229PBF IRFI4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BCFC8A0360F1A303005056AB0C4F&compId=irfi4229pbf.pdf?ci_sign=699c0e908f3c6258718e35df6f7280386d6cc0c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4321PBF IRFI4321PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BD193BBC93F1A303005056AB0C4F&compId=irfi4321pbf.pdf?ci_sign=2ea90ea7929f7e7a1e92a7b4d5c46e524d83b7f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.95 EUR
26+2.82 EUR
30+2.45 EUR
32+2.3 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4410ZPBF IRFI4410ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBE67CFBAE00143&compId=IRFI4410ZPBF.pdf?ci_sign=2106fa9c0773cda6f12da043fee65f032dcce0d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.59 EUR
32+2.29 EUR
33+2.2 EUR
34+2.16 EUR
50+2.07 EUR
Mindestbestellmenge: 28
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IRFI530NPBF IRFI530NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA25F1A6F5005056AB5A8F&compId=irfi530n.pdf?ci_sign=f4dea01463a1c9e7fa5fd95d1b7accd595ebd817 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.25 EUR
65+1.11 EUR
83+0.87 EUR
88+0.82 EUR
1000+0.79 EUR
Mindestbestellmenge: 32
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IRFI540NPBF IRFI540NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA2CF1A6F5005056AB5A8F&compId=irfi540n.pdf?ci_sign=a8e11751173571fb7cd4435d05e530054609bd50 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
48+1.5 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
BAR6403WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4
BAR6403WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 1845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
618+0.12 EUR
667+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BAR6404E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A24E9F32E65820&compId=BAR64-04.pdf?ci_sign=f8b366674ccb5015c2234e8f26366cf079c3def1
BAR6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: double series
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
296+0.24 EUR
384+0.19 EUR
573+0.12 EUR
887+0.081 EUR
937+0.076 EUR
1000+0.073 EUR
Mindestbestellmenge: 193
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BAR66E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99E9452B4A9E4B820&compId=bar66series.pdf?ci_sign=0c78a33a6f68947f2201c382aa99c2ec4e873f38
BAR66E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 150V
Max. forward voltage: 1.2V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 12A
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN
auf Bestellung 4520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
278+0.26 EUR
391+0.18 EUR
455+0.16 EUR
481+0.15 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
BA592E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 1045 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
365+0.2 EUR
405+0.18 EUR
460+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 365
Im Einkaufswagen  Stück im Wert von  UAH
BAR6303WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE253C84036F3D7&compId=BAR63xx_ser.pdf?ci_sign=ce0958481adbf0cb48c9a0e6e33719e686dc0f89
BAR6303WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Mounting: SMD
Case: SOD323
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 2619 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
311+0.23 EUR
412+0.17 EUR
635+0.11 EUR
827+0.087 EUR
910+0.079 EUR
Mindestbestellmenge: 209
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BC817UPNE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58AA86A9198D28469&compId=BC817UPNE6327.pdf?ci_sign=5f649fabee6d5d3ecff99d79dd90e2d88f21a23a
BC817UPNE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 7003 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
215+0.33 EUR
275+0.26 EUR
404+0.18 EUR
428+0.17 EUR
Mindestbestellmenge: 136
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BAS3007ARPPE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB81B27E263A469&compId=BAS3007ARPPE6327.pdf?ci_sign=b5ed67fdce37abb4658c35aaf90648a7216714d2
BAS3007ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 30V
Load current: 0.9A
Max. forward impulse current: 5A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
auf Bestellung 4455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
156+0.46 EUR
182+0.39 EUR
239+0.3 EUR
253+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BAS4002ARPPE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB820F651F00469&compId=BAS4002ARPPE6327.pdf?ci_sign=129a63ea239a763a7e4e19d6fcee10919cb6da76
BAS4002ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
166+0.43 EUR
239+0.3 EUR
252+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
BB640E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9999C75489C9E27&compId=BB640E-DTE.pdf?ci_sign=d61173df73327382dcb8cc40fc10b50674b2bb14
BB640E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.8...76pF
auf Bestellung 2323 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
252+0.28 EUR
385+0.19 EUR
407+0.18 EUR
695+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 173
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SMBTA06UPNE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58AA872AF02448469&compId=SMBTA06UPNE6327.pdf?ci_sign=3ca9fa8b24d5c20f16b1d9b25e78ef3bb53a749e
SMBTA06UPNE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
239+0.3 EUR
371+0.19 EUR
516+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
IRLML9303TRPBF pVersion=0046&contRep=ZT&docId=E2227C9FCDCD65F1A303005056AB0C4F&compId=irlml9303pbf.pdf?ci_sign=25ae6857484c7ee0d56fb5294320af01faa2769b
IRLML9303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1444 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
315+0.23 EUR
451+0.16 EUR
511+0.14 EUR
758+0.094 EUR
807+0.089 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
IPD70R360P7SAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1A620EEC88259&compId=IPD70R360P7S.pdf?ci_sign=1495246343ec5ba186668327700251c676370953
IPD70R360P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1611 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
81+0.88 EUR
93+0.78 EUR
107+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
ICL8001GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDC0A24EAB91E27&compId=ICL8001G-DTE.pdf?ci_sign=8c35d02c215ab6ed66d7d108d76f80643772cc2f
ICL8001GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Integrated circuit features: phase-cut dimming; soft-start function
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Topology: flyback
Mounting: SMD
Case: PG-DSO-8
Operating voltage: 10.5...26V DC
Type of integrated circuit: driver
Number of channels: 1
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
58+1.24 EUR
64+1.13 EUR
67+1.07 EUR
100+1.04 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
IR1161LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FAF5A857158259&compId=IR1161LTRPBF.pdf?ci_sign=9552f004c7f1bcc1886ae1975d8eecd6d4d90f75
IR1161LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 590mW
Supply voltage: 4.75...18V DC
Output current: -2.5...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR11688STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FAF7AC44F86259&compId=IR11688STRPBF.pdf?ci_sign=ee780d8bdb01f8fa87dd259f66e77f18d4356584
IR11688STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 4.75...18V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR1169STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBF87D0F3BF5EA&compId=IR1169STRPBF.pdf?ci_sign=f2290a7105ab761b1e20b2c47711f7541b33ac9d
IR1169STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 11...19V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE5QR1070AZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124
ICE5QR1070AZXKLA1
+2
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Power: 58/32W
Input voltage: 80...265V
Output current: 0.4A
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Breakdown voltage: 700V
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Operating voltage: 10...25.5V DC
Frequency: 20kHz
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.97 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
BFP740H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD90E3A3FC1DD6E0D3&compId=BFP740.pdf?ci_sign=ce7cc8cf4d74db6dfea95f584e1a2362c567feed
BFP740H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Kind of transistor: HBT; RF
Frequency: 44GHz
Collector-emitter voltage: 13V
Current gain: 160...400
Collector current: 45mA
Type of transistor: NPN
Power dissipation: 0.16W
Polarisation: bipolar
Technology: SiGe:C
auf Bestellung 2531 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
198+0.36 EUR
221+0.32 EUR
232+0.31 EUR
249+0.29 EUR
500+0.28 EUR
Mindestbestellmenge: 198
Im Einkaufswagen  Stück im Wert von  UAH
BTS50055-1TMB pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698831673540469&compId=BTS50055-1TMB.pdf?ci_sign=51035787213271d893d95d4f122fa627c7b33776
BTS50055-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-11
Supply voltage: 5...34V DC
On-state resistance: 4.4mΩ
Output current: 55A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.14 EUR
13+5.51 EUR
14+5.21 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BTS50080-1TMB pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869888DFBE586469&compId=BTS50080-1TMB.pdf?ci_sign=dd4acc5f8af1b9f7b8a62d693a1b9e6c2f5af730
BTS50080-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Supply voltage: 5.5...38V DC
On-state resistance: 7mΩ
Output current: 9.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.89 EUR
13+5.65 EUR
14+5.33 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BFR182WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC24251A45713D7&compId=BFR182WH6327.pdf?ci_sign=fc912695d8434b60527e392bdece0c30bc9f5025
BFR182WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Kind of package: reel; tape
Collector-emitter voltage: 12V
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT323
Frequency: 8GHz
auf Bestellung 1312 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
562+0.13 EUR
642+0.11 EUR
705+0.1 EUR
758+0.094 EUR
834+0.086 EUR
878+0.082 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BCP5616H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B2601505A469&compId=BCP5616H6327XTSA1.pdf?ci_sign=4c01b3c5793fee0bfbaf9bdb8dbb9bda5a4b9539
BCP5616H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
220+0.33 EUR
245+0.29 EUR
320+0.23 EUR
335+0.21 EUR
Mindestbestellmenge: 220
Im Einkaufswagen  Stück im Wert von  UAH
BCX53H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C52B239147E469&compId=BCX53.pdf?ci_sign=06038f92536883fb5f048a4ed3d4e9113ac14b8b
BCX53H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 556 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
248+0.29 EUR
285+0.25 EUR
361+0.2 EUR
382+0.19 EUR
Mindestbestellmenge: 248
Im Einkaufswagen  Stück im Wert von  UAH
BCX5610H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587FE96FEC45A6469&compId=BCX56H6327XTSA1.pdf?ci_sign=52af526ba3cf213dc7c315370759944bc823dfb4
BCX5610H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
220+0.33 EUR
250+0.29 EUR
325+0.22 EUR
345+0.21 EUR
Mindestbestellmenge: 220
Im Einkaufswagen  Stück im Wert von  UAH
BCX56H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587FE96FEC45A6469&compId=BCX56H6327XTSA1.pdf?ci_sign=52af526ba3cf213dc7c315370759944bc823dfb4
BCX56H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5802TRPBF pVersion=0046&contRep=ZT&docId=E21F65CA91D160F1A303005056AB0C4F&compId=irf5802pbf.pdf?ci_sign=fc0c972f70c588d11a57b7d4ca5bf38e2b7f9fb6
IRF5802TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1773 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
170+0.42 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS2002TRPBF description pVersion=0046&contRep=ZT&docId=E2227CF15C848FF1A303005056AB0C4F&compId=irlms2002pbf.pdf?ci_sign=582d4397a97dbf01cfb70f72bdc441e378316d1a
IRLMS2002TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL207SPH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9133F743C511CC&compId=BSL207SPH6327XTSA1-DTE.pdf?ci_sign=3b837dc0c8d564b801efd309746191c0e1aca363
BSL207SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
On-state resistance: 41mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -6A
auf Bestellung 2861 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
108+0.67 EUR
216+0.33 EUR
228+0.31 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
IR2132JPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4
IR2132JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Power: 2W
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IR2135JPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2135JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 0.6/1.2kV
Case: PLCC44
Power: 2W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.22 EUR
7+10.8 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IR2233JPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Mounting: SMD
Operating temperature: -40...125°C
Case: PLCC44
Power: 2W
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.67 EUR
7+10.31 EUR
8+9.75 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFL4310TRPBF pVersion=0046&contRep=ZT&docId=E221BDE20E8924F1A303005056AB0C4F&compId=irfl4310pbf.pdf?ci_sign=a876a1102106435a0080d1318abe3e00ee948262
IRFL4310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7434PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA7DC604355EA&compId=IRFB7434PBF.pdf?ci_sign=de22a06d3fea89ee22bebabfc0e049a455f48e14
IRFB7434PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
29+2.49 EUR
45+1.62 EUR
47+1.53 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR2181SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD34A5F1A6F5005056AB5A8F&compId=ir2181.pdf?ci_sign=c5a6339eac545a9ba06e6dda4e6c0792928b2542
IR2181SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.93 EUR
20+3.58 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
SPW20N60S5 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C03411041C74A&compId=SPW20N60S5.pdf?ci_sign=589384c8d611bc972143bda64550ceff9610d199
SPW20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.74 EUR
12+6.02 EUR
13+5.69 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ34NPBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E266EF1A6F5005056AB5A8F&compId=irlz34n.pdf?ci_sign=baf8308bc900f23bfeaeda660831721df1f0c79c
IRLZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
73+0.99 EUR
162+0.44 EUR
171+0.42 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ34NSTRLPBF irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3006PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE5E61C9395EA&compId=IRFP3006PBF.pdf?ci_sign=3f9de887d18eac973e5482dc6f05ce8c2ff62630
IRFP3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
18+3.99 EUR
19+3.79 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3415PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACAF0F1A6F5005056AB5A8F&compId=irfp3415.pdf?ci_sign=7dce4703a8017664ea463bf6fafd149e008ced7d
IRFP3415PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3703PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACAFEF1A6F5005056AB5A8F&compId=irfp3703.pdf?ci_sign=bc68c2fbece183b5370d800cc11ba437ce67f660
IRFP3703PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSP129H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A78558D0C55E5E27&compId=BSP129H6327-DTE.pdf?ci_sign=fdfeb4a848e9de3029b705fc4ac90ccf3288a56b
BSP129H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Power dissipation: 1.8W
Case: SOT223
auf Bestellung 1659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
94+0.77 EUR
147+0.49 EUR
155+0.46 EUR
250+0.45 EUR
500+0.44 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
IRS2304SPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7E9BF1A6F5005056AB5A8F&compId=irs2304spbf.pdf?ci_sign=326f71e93afb3bc0a893f0a8336d053fc6daee54
IRS2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 185ns
Power: 625mW
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
35+2.1 EUR
45+1.62 EUR
46+1.56 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BB535E7904HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999B05181EEDE27&compId=BB535-DTE.pdf?ci_sign=a4fb6cf5ef18ed8b38aab6c8baa5d1a7cb263a48
BB535E7904HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2...20pF
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
295+0.24 EUR
382+0.19 EUR
420+0.17 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
BB85702VH7902XTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAAB5B5A3168B40CE&compId=BB837_BB857.pdf?ci_sign=17620b0416a335ead6bd0f7a08dcc207a84a3e6a
BB85702VH7902XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: RF
Mounting: SMD
Case: SC79
Capacitance: 0.45...7.2pF
Max. off-state voltage: 30V
Load current: 20mA
Semiconductor structure: single diode
Leakage current: 0.2µA
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
192+0.37 EUR
360+0.2 EUR
382+0.19 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
BAR6302VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE253C84036F3D7&compId=BAR63xx_ser.pdf?ci_sign=ce0958481adbf0cb48c9a0e6e33719e686dc0f89
BAR6302VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Case: SC79
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC123N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA543505C011C&compId=BSC123N08NS3G-DTE.pdf?ci_sign=1d5e204586f07d92fb2c8f8a1f997c1b7905496e
BSC123N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 55A
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
auf Bestellung 1291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
60+1.2 EUR
86+0.84 EUR
90+0.8 EUR
500+0.77 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
BSC160N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DAF9708D3411C&compId=BSC160N10NS3G-DTE.pdf?ci_sign=40b99f03d0385a774315a98299c6b275c55d6333
BSC160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
Power dissipation: 60W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 42A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC190N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC604BDBE8C11C&compId=BSC190N15NS3G-DTE.pdf?ci_sign=198571536f486da766f745ce415f44d0d9f21d86
BSC190N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 150V
Drain current: 50A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
BAR6402VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 2289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
275+0.26 EUR
455+0.16 EUR
500+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 275
Im Einkaufswagen  Stück im Wert von  UAH
BAR6405WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4
BAR6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Mounting: SMD
Case: SOT323
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: common cathode; double
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
auf Bestellung 4115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
264+0.27 EUR
385+0.19 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
IRF250P225 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5E6B7DDCB8A18&compId=IRF250P225.pdf?ci_sign=a24623db79b4550212f4261372c78bcb6e01d720
IRF250P225
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Mounting: THT
Drain-source voltage: 250V
Drain current: 49A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Gate charge: 96nC
Technology: StrongIRFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO247AC
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.74 EUR
12+6.18 EUR
13+5.83 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ46NLPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D5055F6F1A6F5005056AB5A8F&compId=irfz46ns.pdf?ci_sign=823535b9df98d9e91cdfca84dfbe6e3ff87b06ed
IRFZ46NLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ46NPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D5055FDF1A6F5005056AB5A8F&compId=irfz46n.pdf?ci_sign=93c1971f002e2dd0aa19b059e611e1bf772c02d6
IRFZ46NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSB165N15NZ3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB14E6620611C&compId=BSB165N15NZ3G-DTE.pdf?ci_sign=dd418a760ded1deee6217633abfb617c5e3612cb
BSB165N15NZ3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI1310NPBF pVersion=0046&contRep=ZT&docId=E1C04E5F284B41F1A6F5005056AB5A8F&compId=irfi1310n.pdf?ci_sign=01e2e2c9f0e71c2ff0c5bc018c7724f0acccbe52
IRFI1310NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
35+2.1 EUR
39+1.86 EUR
45+1.62 EUR
47+1.53 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4229PBF pVersion=0046&contRep=ZT&docId=E221BCFC8A0360F1A303005056AB0C4F&compId=irfi4229pbf.pdf?ci_sign=699c0e908f3c6258718e35df6f7280386d6cc0c8
IRFI4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4321PBF pVersion=0046&contRep=ZT&docId=E221BD193BBC93F1A303005056AB0C4F&compId=irfi4321pbf.pdf?ci_sign=2ea90ea7929f7e7a1e92a7b4d5c46e524d83b7f1
IRFI4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
26+2.82 EUR
30+2.45 EUR
32+2.3 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4410ZPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBE67CFBAE00143&compId=IRFI4410ZPBF.pdf?ci_sign=2106fa9c0773cda6f12da043fee65f032dcce0d2
IRFI4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.59 EUR
32+2.29 EUR
33+2.2 EUR
34+2.16 EUR
50+2.07 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRFI530NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA25F1A6F5005056AB5A8F&compId=irfi530n.pdf?ci_sign=f4dea01463a1c9e7fa5fd95d1b7accd595ebd817
IRFI530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
65+1.11 EUR
83+0.87 EUR
88+0.82 EUR
1000+0.79 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IRFI540NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA2CF1A6F5005056AB5A8F&compId=irfi540n.pdf?ci_sign=a8e11751173571fb7cd4435d05e530054609bd50
IRFI540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
48+1.5 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
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