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IPC313N10N3RX1SA2 INFINEON TECHNOLOGIES Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 2A; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 2A
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 30605 Stücke:
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14+5.45 EUR
Mindestbestellmenge: 14
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TLD5097EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
Produkt ist nicht verfügbar
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TLD5098EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811 Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
Produkt ist nicht verfügbar
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TLD5098ELXUMA1 INFINEON TECHNOLOGIES TLD5098EL-Data-Sheet-11-Infineon.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30432c59a87e012c5e98d2853514&ack=t Category: LED drivers
Description: IC: driver; boost,buck,buck-boost,flyback,SEPIC; PG-SSOP-14-EP
Topology: boost; buck; buck-boost; flyback; SEPIC
Type of integrated circuit: driver
Mounting: SMD
Case: PG-SSOP-14-EP
Operating temperature: -40...150°C
Output voltage: 4.5...5.5V
Input voltage: 4.5...45V
Frequency: 100...500kHz
Application: automotive industry
auf Bestellung 10000 Stücke:
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2500+2.93 EUR
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BSC065N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 64A; 46W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.57 EUR
Mindestbestellmenge: 5000
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BSZ065N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 46W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
Power dissipation: 46W
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.47 EUR
Mindestbestellmenge: 5000
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TLE4269GXUMA1 TLE4269GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADB0E59BA053D7&compId=TLE4269.pdf?ci_sign=ba658610b7eaf990cee200182c4a95c425cdf371 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
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BSZ086P03NS3EGATMA BSZ086P03NS3EGATMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9292ADCD3BB1CC&compId=BSZ086P03NS3EGATMA-DTE.pdf?ci_sign=69c493c9f9525a42e6ae68c562c52c19e9d62410 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
Produkt ist nicht verfügbar
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BSZ088N03MSGATMA1 BSZ088N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E28059699C11C&compId=BSZ088N03MSG-DTE.pdf?ci_sign=11629a90dffdab400bce748e67528423bd3ce995 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSZ084N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1FC933E9011C&compId=BSZ084N08NS5-DTE.pdf?ci_sign=3fec2ef640d7d5459287142b23f75e308e399b08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9293DA246CB1CC&compId=BSZ086P03NS3GATMA1-dte.pdf?ci_sign=d98c1dc5ac6383467a461262b29e3d9e0acd7ad7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
Produkt ist nicht verfügbar
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BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E269AB1C6011C&compId=BSZ088N03LSG-DTE.pdf?ci_sign=3b3d13f98dd8170a53c03e2f4d12325b92340d2a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRFR3410TRPBF IRFR3410TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C23A6E84E5F1A303005056AB0C4F&compId=irfr3410pbf.pdf?ci_sign=7a526365fa52f5c6eeb84f6b44df41739c012440 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3410TRLPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XC8362FRIABFXUMA1 XC8362FRIABFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD69C9A36587E28&compId=XC83X-DTE.pdf?ci_sign=727cfcb1b0c7f531ebee66035cde9922c4858fde Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
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IPD80R900P7ATMA1 IPD80R900P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA531EA7A68A143&compId=IPD80R900P7.pdf?ci_sign=af71fb00aaf71f68f1b9472ad9adb4d9ef96b672 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Technology: CoolMOS™ P7
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 800V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
auf Bestellung 2480 Stücke:
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38+1.92 EUR
57+1.26 EUR
92+0.79 EUR
97+0.74 EUR
500+0.71 EUR
Mindestbestellmenge: 38
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IPU80R900P7AKMA1 IPU80R900P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBBDDABCB60143&compId=IPU80R900P7.pdf?ci_sign=3a807cce8c544f1ff3fcc5744c8985b6833e01c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 203 Stücke:
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54+1.34 EUR
65+1.11 EUR
98+0.74 EUR
103+0.7 EUR
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IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
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IPD900P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD900P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2f59100ba Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 16.4A; 63W; DPAK,TO252
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 16.4A
Power dissipation: 63W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 90Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
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2500+0.4 EUR
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IPS70R900P7SAKMA1 INFINEON TECHNOLOGIES infineon-ips70r900p7s-ds-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 943 Stücke:
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300+0.3 EUR
Mindestbestellmenge: 300
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CY7C1021DV33-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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CY7C1021DV33-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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CY7C1021DV33-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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CY7C1021DV33-10BVXIT INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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IPP60R099P6XKSA1 IPP60R099P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A391E6B471BF&compId=IPP60R099P6-DTE.pdf?ci_sign=6378e662d8a8fbcb13cbf52bee33edeeb3c53f18 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICL8001GXUMA1 ICL8001GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDC0A24EAB91E27&compId=ICL8001G-DTE.pdf?ci_sign=8c35d02c215ab6ed66d7d108d76f80643772cc2f Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Type of integrated circuit: driver
Topology: flyback
Case: PG-DSO-8
Integrated circuit features: phase-cut dimming; soft-start function
Number of channels: 1
Operating voltage: 10.5...26V DC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
auf Bestellung 117 Stücke:
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54+1.34 EUR
61+1.19 EUR
67+1.07 EUR
100+1.04 EUR
Mindestbestellmenge: 54
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S29PL127J60BFI040 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29PL127J65BFW040 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 65ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29PL127J70BFI040 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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IRLHM620TRPBF IRLHM620TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22277530C4B63F1A303005056AB0C4F&compId=irlhm620pbf.pdf?ci_sign=c886920d7c2600102cb1c0b26f09f61fd0a26f02 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IPP041N12N3GXKSA1 IPP041N12N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7293DEAA811C&compId=IPP041N12N3G-DTE.pdf?ci_sign=1cc97405361528b7e9c295ad1d3fccf8117bba59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Kind of package: tube
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Produkt ist nicht verfügbar
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IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Produkt ist nicht verfügbar
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BGS12SN6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856 Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
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IRF8910TRPBF IRF8910TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AEDCC02BE6F1A303005056AB0C4F&compId=irf8910pbf.pdf?ci_sign=415f2761abde97419fd0b9fe620849045d4ded83 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF8910TRPBFXTMA1 INFINEON TECHNOLOGIES Infineon-IRF8910-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535610ec101d8d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25HS01GTDPBHI033 INFINEON TECHNOLOGIES infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf?fileId=8ac78c8c7f2a768a017f52f1a4242c57 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S25HS01GTDPMHI013 INFINEON TECHNOLOGIES en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S26HS01GTGABHA030 INFINEON TECHNOLOGIES Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY9BF118SPMC-GK7FKCGE1 INFINEON TECHNOLOGIES Infineon-CY9BF116S_T_CY9BF117S_T_CY9BF118S_T_FM3_CY9B110T_Series_32-bit_Arm_Cortex_-M3_based_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede6d38635a Category: Unclassified
Description: CY9BF118SPMC-GK7FKCGE1
auf Bestellung 1320 Stücke:
Lieferzeit 14-21 Tag (e)
60+15.92 EUR
Mindestbestellmenge: 60
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SPD09P06PLGBTMA1 SPD09P06PLGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C871EC1151CC&compId=SPD09P06PLGBTMA1-DTE.pdf?ci_sign=159e1dd4d16b5783d745104ea92eb75c1c742566 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
76+0.95 EUR
102+0.71 EUR
104+0.69 EUR
107+0.67 EUR
110+0.65 EUR
Mindestbestellmenge: 60
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IRG4IBC10UDPBF IRG4IBC10UDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D018C449B8F1A303005056AB0C4F&compId=irg4ibc10udpbf.pdf?ci_sign=adbf601affa76102c9e89e048093f9b57ce8b949 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4IBC30WPBF IRG4IBC30WPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D159907BB8F1A303005056AB0C4F&compId=irg4ibc30wpbf.pdf?ci_sign=6ad5941b92d9c85dc9f4d80e3abcf408dfea0596 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4PSH71KDPBF IRG4PSH71KDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D74DA0751DF1A303005056AB0C4F&compId=irg4psh71kdpbf.pdf?ci_sign=807edbea8fc791bb19fa6f5771a90dff64a7fca4 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4RC10KDTRPBF IRG4RC10KDTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFAA8ACB0415EA&compId=IRG4RC10KDTRPBF.pdf?ci_sign=2087d15123c50192bd1e99a508f775700674dc79 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
Produkt ist nicht verfügbar
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IRG4RC10UDPBF IRG4RC10UDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D89F91A94DF1A303005056AB0C4F&compId=irg4rc10udpbf.pdf?ci_sign=f1c86d8696fdd0a1a5b6f29a51cde10d472021d7 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FZ400R17KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F4F7E06AE0D5&compId=FZ400R17KE4.pdf?ci_sign=3f57764cc2e603070a38fc08322d912fd1ad5e8f Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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XMC4502F100K768ACXQMA1 XMC4502F100K768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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XMC4500F100F768ACXQMA1 XMC4500F100F768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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XMC4500F100K768ACXQMA1 XMC4500F100K768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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XMC4500F144K768ACXQMA1 XMC4500F144K768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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XMC4502F100F768ACXQMA1 XMC4502F100F768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S25FL128SAGNFV001 S25FL128SAGNFV001 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: tube
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 26
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IRFR13N20DTRPBF IRFR13N20DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C0BD90492DF1A303005056AB0C4F&compId=irfr13n20dpbf.pdf?ci_sign=09aaf56c8dfd43a96b5914bb6b2e5e8b5c844bd7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FP10R12W1T7B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D84C0AEB33F8BF&compId=FP10R12W1T7B11.pdf?ci_sign=f22158e9fd40755a352e4e202ff2f4db12e763f8 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-2
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1666133B1A259&compId=IPD80R1K4P7.pdf?ci_sign=6b2571a0111d4343dd05c0fe97dac72608ab0bed Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
79+0.91 EUR
94+0.76 EUR
114+0.63 EUR
121+0.59 EUR
Mindestbestellmenge: 68
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SPD15P10PLGBTMA1 SPD15P10PLGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92CF4C7E46F1CC&compId=SPD15P10PLGBTMA1-DTE.pdf?ci_sign=402130b95236a3b71feabee71e64b44e6c258ec1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 2164 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
50+1.44 EUR
52+1.39 EUR
53+1.36 EUR
Mindestbestellmenge: 49
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IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1A3FFC51C4259&compId=IPD70R1K4P7S.pdf?ci_sign=e4d70d361d50f363141caf22b4555d1f6679c040 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2494 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
110+0.65 EUR
174+0.41 EUR
184+0.39 EUR
500+0.38 EUR
Mindestbestellmenge: 80
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IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Gate-source voltage: ±20V
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO252-3
auf Bestellung 2252 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
95+0.76 EUR
110+0.65 EUR
157+0.46 EUR
167+0.43 EUR
500+0.41 EUR
Mindestbestellmenge: 72
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IPD60R280P7ATMA1 IPD60R280P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA470B7CA4DE143&compId=IPD60R280P7.pdf?ci_sign=2eed03d5001be500c4f619418a3d594df8c87396 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 2099 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
47+1.53 EUR
50+1.44 EUR
53+1.37 EUR
54+1.33 EUR
Mindestbestellmenge: 30
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IPD90N04S404ATMA1 IPD90N04S404ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA56C197F98A143&compId=IPD90N04S404.pdf?ci_sign=140394b04014dc8900b3e909a754077d67121b81 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
Drain current: 81A
Power dissipation: 71W
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
57+1.27 EUR
64+1.13 EUR
67+1.07 EUR
74+0.97 EUR
Mindestbestellmenge: 47
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IPC313N10N3RX1SA2 Infineon-IPC313N10N3R-DS-v02_00-EN.pdf?fileId=5546d462525dbac4015287a4906625ca
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 2A; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 2A
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 30605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.45 EUR
Mindestbestellmenge: 14
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TLD5097EPXUMA1 Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
Produkt ist nicht verfügbar
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TLD5098EPXUMA1 Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
Produkt ist nicht verfügbar
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TLD5098ELXUMA1 TLD5098EL-Data-Sheet-11-Infineon.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30432c59a87e012c5e98d2853514&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; boost,buck,buck-boost,flyback,SEPIC; PG-SSOP-14-EP
Topology: boost; buck; buck-boost; flyback; SEPIC
Type of integrated circuit: driver
Mounting: SMD
Case: PG-SSOP-14-EP
Operating temperature: -40...150°C
Output voltage: 4.5...5.5V
Input voltage: 4.5...45V
Frequency: 100...500kHz
Application: automotive industry
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.93 EUR
Mindestbestellmenge: 2500
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BSC065N06LS5ATMA1 Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 64A; 46W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.57 EUR
Mindestbestellmenge: 5000
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BSZ065N06LS5ATMA1 Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 46W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
Power dissipation: 46W
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.47 EUR
Mindestbestellmenge: 5000
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TLE4269GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADB0E59BA053D7&compId=TLE4269.pdf?ci_sign=ba658610b7eaf990cee200182c4a95c425cdf371
TLE4269GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
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BSZ086P03NS3EGATMA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9292ADCD3BB1CC&compId=BSZ086P03NS3EGATMA-DTE.pdf?ci_sign=69c493c9f9525a42e6ae68c562c52c19e9d62410
BSZ086P03NS3EGATMA
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
Produkt ist nicht verfügbar
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BSZ088N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E28059699C11C&compId=BSZ088N03MSG-DTE.pdf?ci_sign=11629a90dffdab400bce748e67528423bd3ce995
BSZ088N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSZ084N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1FC933E9011C&compId=BSZ084N08NS5-DTE.pdf?ci_sign=3fec2ef640d7d5459287142b23f75e308e399b08
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSZ086P03NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9293DA246CB1CC&compId=BSZ086P03NS3GATMA1-dte.pdf?ci_sign=d98c1dc5ac6383467a461262b29e3d9e0acd7ad7
BSZ086P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
Produkt ist nicht verfügbar
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BSZ088N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E269AB1C6011C&compId=BSZ088N03LSG-DTE.pdf?ci_sign=3b3d13f98dd8170a53c03e2f4d12325b92340d2a
BSZ088N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRFR3410TRPBF description pVersion=0046&contRep=ZT&docId=E221C23A6E84E5F1A303005056AB0C4F&compId=irfr3410pbf.pdf?ci_sign=7a526365fa52f5c6eeb84f6b44df41739c012440
IRFR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3410TRLPBF irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XC8362FRIABFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD69C9A36587E28&compId=XC83X-DTE.pdf?ci_sign=727cfcb1b0c7f531ebee66035cde9922c4858fde
XC8362FRIABFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
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IPD80R900P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA531EA7A68A143&compId=IPD80R900P7.pdf?ci_sign=af71fb00aaf71f68f1b9472ad9adb4d9ef96b672
IPD80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Technology: CoolMOS™ P7
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 800V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
57+1.26 EUR
92+0.79 EUR
97+0.74 EUR
500+0.71 EUR
Mindestbestellmenge: 38
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IPU80R900P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBBDDABCB60143&compId=IPU80R900P7.pdf?ci_sign=3a807cce8c544f1ff3fcc5744c8985b6833e01c9
IPU80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
65+1.11 EUR
98+0.74 EUR
103+0.7 EUR
Mindestbestellmenge: 54
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IPS80R900P7AKMA1 Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039
IPS80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IPD900P06NMATMA1 Infineon-IPD900P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2f59100ba
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 16.4A; 63W; DPAK,TO252
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 16.4A
Power dissipation: 63W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 90Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.4 EUR
Mindestbestellmenge: 2500
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IPS70R900P7SAKMA1 infineon-ips70r900p7s-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 943 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
300+0.3 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1021DV33-10VXI description Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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CY7C1021DV33-10BVXI Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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CY7C1021DV33-10VXIT Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1021DV33-10BVXIT Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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IPP60R099P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A391E6B471BF&compId=IPP60R099P6-DTE.pdf?ci_sign=6378e662d8a8fbcb13cbf52bee33edeeb3c53f18
IPP60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICL8001GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDC0A24EAB91E27&compId=ICL8001G-DTE.pdf?ci_sign=8c35d02c215ab6ed66d7d108d76f80643772cc2f
ICL8001GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Type of integrated circuit: driver
Topology: flyback
Case: PG-DSO-8
Integrated circuit features: phase-cut dimming; soft-start function
Number of channels: 1
Operating voltage: 10.5...26V DC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
61+1.19 EUR
67+1.07 EUR
100+1.04 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
S29PL127J60BFI040 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29PL127J65BFW040 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 65ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29PL127J70BFI040 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLHM620TRPBF pVersion=0046&contRep=ZT&docId=E22277530C4B63F1A303005056AB0C4F&compId=irlhm620pbf.pdf?ci_sign=c886920d7c2600102cb1c0b26f09f61fd0a26f02
IRLHM620TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP041N12N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7293DEAA811C&compId=IPP041N12N3G-DTE.pdf?ci_sign=1cc97405361528b7e9c295ad1d3fccf8117bba59
IPP041N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Kind of package: tube
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI041N12N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e
IPI041N12N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Produkt ist nicht verfügbar
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BGS12SN6E6327XTSA1 Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8910TRPBF pVersion=0046&contRep=ZT&docId=E221AEDCC02BE6F1A303005056AB0C4F&compId=irf8910pbf.pdf?ci_sign=415f2761abde97419fd0b9fe620849045d4ded83
IRF8910TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF8910TRPBFXTMA1 Infineon-IRF8910-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535610ec101d8d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25HS01GTDPBHI033 infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf?fileId=8ac78c8c7f2a768a017f52f1a4242c57
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25HS01GTDPMHI013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26HS01GTGABHA030 Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF118SPMC-GK7FKCGE1 Infineon-CY9BF116S_T_CY9BF117S_T_CY9BF118S_T_FM3_CY9B110T_Series_32-bit_Arm_Cortex_-M3_based_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede6d38635a
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY9BF118SPMC-GK7FKCGE1
auf Bestellung 1320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+15.92 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
SPD09P06PLGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C871EC1151CC&compId=SPD09P06PLGBTMA1-DTE.pdf?ci_sign=159e1dd4d16b5783d745104ea92eb75c1c742566
SPD09P06PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
76+0.95 EUR
102+0.71 EUR
104+0.69 EUR
107+0.67 EUR
110+0.65 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IRG4IBC10UDPBF pVersion=0046&contRep=ZT&docId=E221D018C449B8F1A303005056AB0C4F&compId=irg4ibc10udpbf.pdf?ci_sign=adbf601affa76102c9e89e048093f9b57ce8b949
IRG4IBC10UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4IBC30WPBF pVersion=0046&contRep=ZT&docId=E221D159907BB8F1A303005056AB0C4F&compId=irg4ibc30wpbf.pdf?ci_sign=6ad5941b92d9c85dc9f4d80e3abcf408dfea0596
IRG4IBC30WPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PSH71KDPBF pVersion=0046&contRep=ZT&docId=E221D74DA0751DF1A303005056AB0C4F&compId=irg4psh71kdpbf.pdf?ci_sign=807edbea8fc791bb19fa6f5771a90dff64a7fca4
IRG4PSH71KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4RC10KDTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFAA8ACB0415EA&compId=IRG4RC10KDTRPBF.pdf?ci_sign=2087d15123c50192bd1e99a508f775700674dc79
IRG4RC10KDTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4RC10UDPBF pVersion=0046&contRep=ZT&docId=E221D89F91A94DF1A303005056AB0C4F&compId=irg4rc10udpbf.pdf?ci_sign=f1c86d8696fdd0a1a5b6f29a51cde10d472021d7
IRG4RC10UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R17KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F4F7E06AE0D5&compId=FZ400R17KE4.pdf?ci_sign=3f57764cc2e603070a38fc08322d912fd1ad5e8f
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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XMC4502F100K768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4502F100K768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4500F100F768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F100F768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4500F100K768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F100K768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4500F144K768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F144K768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4502F100F768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4502F100F768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGNFV001 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFV001
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: tube
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRFR13N20DTRPBF pVersion=0046&contRep=ZT&docId=E221C0BD90492DF1A303005056AB0C4F&compId=irfr13n20dpbf.pdf?ci_sign=09aaf56c8dfd43a96b5914bb6b2e5e8b5c844bd7
IRFR13N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FP10R12W1T7B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D84C0AEB33F8BF&compId=FP10R12W1T7B11.pdf?ci_sign=f22158e9fd40755a352e4e202ff2f4db12e763f8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-2
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IPD80R1K4P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1666133B1A259&compId=IPD80R1K4P7.pdf?ci_sign=6b2571a0111d4343dd05c0fe97dac72608ab0bed
IPD80R1K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
79+0.91 EUR
94+0.76 EUR
114+0.63 EUR
121+0.59 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
SPD15P10PLGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92CF4C7E46F1CC&compId=SPD15P10PLGBTMA1-DTE.pdf?ci_sign=402130b95236a3b71feabee71e64b44e6c258ec1
SPD15P10PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 2164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
50+1.44 EUR
52+1.39 EUR
53+1.36 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IPD70R1K4P7SAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1A3FFC51C4259&compId=IPD70R1K4P7S.pdf?ci_sign=e4d70d361d50f363141caf22b4555d1f6679c040
IPD70R1K4P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2494 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
110+0.65 EUR
174+0.41 EUR
184+0.39 EUR
500+0.38 EUR
Mindestbestellmenge: 80
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IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Gate-source voltage: ±20V
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO252-3
auf Bestellung 2252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
95+0.76 EUR
110+0.65 EUR
157+0.46 EUR
167+0.43 EUR
500+0.41 EUR
Mindestbestellmenge: 72
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IPD60R280P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA470B7CA4DE143&compId=IPD60R280P7.pdf?ci_sign=2eed03d5001be500c4f619418a3d594df8c87396
IPD60R280P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 2099 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.4 EUR
47+1.53 EUR
50+1.44 EUR
53+1.37 EUR
54+1.33 EUR
Mindestbestellmenge: 30
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IPD90N04S404ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA56C197F98A143&compId=IPD90N04S404.pdf?ci_sign=140394b04014dc8900b3e909a754077d67121b81
IPD90N04S404ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
Drain current: 81A
Power dissipation: 71W
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
57+1.27 EUR
64+1.13 EUR
67+1.07 EUR
74+0.97 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
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