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IRLR3114ZTRPBF IRLR3114ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F0A43EA42F1A303005056AB0C4F&compId=irlr3114zpbf.pdf?ci_sign=b67d9f56423182b820e3c12a3af3a3ea7058ed1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IHW30N160R5XKSA1 IHW30N160R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA46CB7F2218BF&compId=IHW30N160R5.pdf?ci_sign=f142f1feb3d530f98974a0719171f909d530cf4d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Turn-off time: 411ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 158 Stücke:
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13+5.73 EUR
15+5.06 EUR
16+4.5 EUR
30+3.76 EUR
Mindestbestellmenge: 13
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IR2113PBF IR2113PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3412F1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=247116e3d5b7bad6858a091480152cfde4abe4bd description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 20 Stücke:
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20+3.58 EUR
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IRLML9301TRPBF IRLML9301TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C86AD25A8F1A303005056AB0C4F&compId=irlml9301pbf.pdf?ci_sign=cff5d3a9e1fb1b7e0e7544975a7831b46000b145 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 7975 Stücke:
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193+0.37 EUR
268+0.27 EUR
382+0.19 EUR
443+0.16 EUR
596+0.12 EUR
1000+0.11 EUR
3000+0.093 EUR
6000+0.087 EUR
Mindestbestellmenge: 193
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SMBT2222AE6327HTSA1 SMBT2222AE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7FFBA97A00469&compId=SMBT2222AE6327.pdf?ci_sign=e947f7e7ed39cabf58351392c21760d8d29d3c84 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
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BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E7B9E48F611C&compId=BSC040N10NS5-DTE.pdf?ci_sign=1afe5a86553b823be907139a75c36c5eed705e55 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA51E41005A11C&compId=BSZ440N10NS3G-DTE.pdf?ci_sign=346209358a53e8d09666903e8b3a2cdcaef96bb8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 5899 Stücke:
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77+0.93 EUR
90+0.8 EUR
91+0.79 EUR
Mindestbestellmenge: 77
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IAUZ40N10S5L120ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IAUZ40N10S5N130ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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PVT412LSPBF PVT412LSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D189AB1E21EC&compId=pvt412.pdf?ci_sign=8a606da7add791abdac6d3bf1a684622fceaac0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.48 EUR
15+5 EUR
Mindestbestellmenge: 12
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IDWD40G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 290A
Power dissipation: 402W
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IR2132SPBF IR2132SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 25 Stücke:
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10+7.78 EUR
11+6.51 EUR
12+6.03 EUR
25+5.91 EUR
Mindestbestellmenge: 10
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IPB64N25S320ATMA1 INFINEON TECHNOLOGIES infineon-ipb64n25s3-20-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Pulsed drain current: 256A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: OptiMOS® -T
Case: PG-TO263-3-2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 20mΩ
Drain current: 46A
Produkt ist nicht verfügbar
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IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22281BCD47E0AF1A303005056AB0C4F&compId=irlr9343pbf.pdf?ci_sign=75d97c5ddc279c59419ed2ddad89b8f640b34891 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IR2136SPBF IR2136SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.19 EUR
Mindestbestellmenge: 10
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IR2136STRPBF IR2136STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Produkt ist nicht verfügbar
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2N7002H6327XTSA2 2N7002H6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5C2CA4584F10B&compId=2N7002H6327XTSA2.pdf?ci_sign=329548fe42e8d9dcb0858f8ddae70fe1ac08d7bb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5827 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
610+0.12 EUR
676+0.11 EUR
916+0.078 EUR
1053+0.068 EUR
1421+0.05 EUR
1471+0.049 EUR
Mindestbestellmenge: 500
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AUIRGP35B60PD AUIRGP35B60PD INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC7325BAA9773D7&compId=AUIRGP35B60PD.pdf?ci_sign=a814561838fdc4c27889b131942746e92013c0b3 Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Produkt ist nicht verfügbar
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IRF1405PBF IRF1405PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB69F1A6F5005056AB5A8F&compId=irf1405.pdf?ci_sign=de55851dabce3431b508ff257378e49731e4e7e9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 170nC
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
33+2.2 EUR
41+1.76 EUR
53+1.36 EUR
100+1.1 EUR
500+1.04 EUR
Mindestbestellmenge: 28
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IRF1405STRLPBF IRF1405STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5DCEDEDF06F1A303005056AB0C4F&compId=irf1405spbf.pdf?ci_sign=8ffb81f923f936adf8e3205c35e37a3d5a64cf83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRF1405ZPBF IRF1405ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5DE6DA3AF1F1A303005056AB0C4F&compId=irf1405zpbf.pdf?ci_sign=e3a2c165305a26dfb16ddc05272a36952c1eb65f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.65 EUR
46+1.56 EUR
50+1.52 EUR
100+1.44 EUR
Mindestbestellmenge: 28
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IRS44273LTRPBF IRS44273LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF149F8AD1575EA&compId=IRS44273LTRPBF.pdf?ci_sign=0811e9e8216aae8fdb7f04e8f1b695bc97deadfd Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
Supply voltage: 9.2...20V DC
Topology: single transistor
Number of channels: 1
auf Bestellung 1453 Stücke:
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87+0.83 EUR
105+0.69 EUR
115+0.63 EUR
Mindestbestellmenge: 87
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IRS21064PBF IRS21064PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 51 Stücke:
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17+4.26 EUR
20+3.62 EUR
Mindestbestellmenge: 17
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IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRF7456TRPBF IRF7456TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A3B5252434F1A303005056AB0C4F&compId=irf7456pbf.pdf?ci_sign=20eed7c0bcf4bf49fd28c8d398cd07cb3486fafc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFB4115PBF IRFB4115PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF92803E4748AD20D6&compId=IRFB4115.pdf?ci_sign=a357cd38840e146aca5baa544c6a049cd1055155 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 516 Stücke:
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22+3.37 EUR
26+2.79 EUR
27+2.73 EUR
28+2.65 EUR
Mindestbestellmenge: 22
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BCV47E6327 BCV47E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 7542 Stücke:
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278+0.26 EUR
376+0.19 EUR
583+0.12 EUR
770+0.093 EUR
1000+0.084 EUR
3000+0.073 EUR
Mindestbestellmenge: 278
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SPW47N60C3 SPW47N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74E879E8C75EA&compId=SPW47N60C3.pdf?ci_sign=1a73e65522ac6237960a368d454b3746e49500ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 222 Stücke:
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6+12.84 EUR
10+12.4 EUR
30+11.81 EUR
120+10.61 EUR
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SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC092237EC5C143&compId=SPW47N60CFD.pdf?ci_sign=c0df2ab8085e621354099569b122d97599ed0c0d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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TLE7259-3GE TLE7259-3GE INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0E450A8D76A14&compId=TLE7259-3.pdf?ci_sign=938ffa7d89771037b59075fcaeb1333d803a8dcf Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 5mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...27V DC
Interface: LIN
auf Bestellung 2391 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
59+1.23 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 53
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IRFR024NTRPBF IRFR024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BF5C458C24F1A303005056AB0C4F&compId=irfr024npbf.pdf?ci_sign=9b1c86bd4b0622dc63c7904ce4b9483a8f5c26cd description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 8560 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
183+0.39 EUR
194+0.37 EUR
199+0.36 EUR
205+0.35 EUR
250+0.34 EUR
Mindestbestellmenge: 173
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IR2118SPBF IR2118SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 105ns
Turn-on time: 125ns
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Case: SO8
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
auf Bestellung 41 Stücke:
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IR2301SPBF IR2301SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Output current: -0.35...0.2A
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
auf Bestellung 150 Stücke:
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35+2.06 EUR
46+1.57 EUR
51+1.42 EUR
54+1.33 EUR
95+1.26 EUR
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IR2304SPBF IR2304SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA49DF8BDAB53D7&compId=ir2304.pdf?ci_sign=7f72118dd22d9864326e5acc4031a73c65be54a0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
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IR2308SPBF IR2308SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
Produkt ist nicht verfügbar
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IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Topology: IGBT three-phase bridge; thermistor
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Case: PG-MDIP24
Mounting: THT
Operating temperature: -40...125°C
Output current: -20...20A
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 30.3W
Voltage class: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Protection: anti-overload OPP; undervoltage UVP
auf Bestellung 7 Stücke:
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3+24.5 EUR
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ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED782B105FA65B54259&compId=ICE2PCS01G.pdf?ci_sign=c1d3e9b38604e08af0a8c32c9b4c5de70405956e Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 437 Stücke:
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59+1.22 EUR
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ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 INFINEON TECHNOLOGIES INFNS16600-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 2361 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
65+1.1 EUR
70+1.03 EUR
79+0.92 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 59
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IRFB7437PBF IRFB7437PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAA67076835EA&compId=IRFB7437PBF.pdf?ci_sign=b3843ba8ed4017c3b389d86bb5aa3a62671a2a3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.29 EUR
60+1.21 EUR
83+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 32
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IR21834SPBF IR21834SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
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IHW30N120R5XKSA1 IHW30N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC84639C915820&compId=IHW30N120R5.pdf?ci_sign=89c6f0bb98f687ad7406821198f0deac2a7ce69f Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
auf Bestellung 195 Stücke:
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18+4.2 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 18
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IAUC60N06S5L073ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N06S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA060N06NM5SXKSA1 IPA060N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA060N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cebbb676e20 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 224A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
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IPA060N06NXKSA1 IPA060N06NXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9AD58F7ECE11C&compId=IPA060N06N-DTE.pdf?ci_sign=de88a38c0543e10336c2f0466946c10e8480c91d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9Z24NPBF IRF9Z24NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B672F1A6F5005056AB5A8F&compId=irf9z24n.pdf?ci_sign=86417c6f7b297148bbf68c7249788f86ad2c878e Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 12.7nC
Kind of package: tube
auf Bestellung 1232 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
139+0.52 EUR
150+0.48 EUR
250+0.43 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 120
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IRF9Z24NSTRLPBF INFINEON TECHNOLOGIES Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT6404E6327HTSA1 BAT6404E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 5039 Stücke:
Lieferzeit 14-21 Tag (e)
611+0.12 EUR
782+0.092 EUR
820+0.087 EUR
1034+0.069 EUR
1145+0.062 EUR
1323+0.054 EUR
1397+0.051 EUR
3000+0.05 EUR
Mindestbestellmenge: 611
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IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1644 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
125+0.57 EUR
135+0.53 EUR
143+0.5 EUR
222+0.32 EUR
234+0.31 EUR
Mindestbestellmenge: 109
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IRLR3410TRRPBF IRLR3410TRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BSS127H6327XTSA2 BSS127H6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9BA476E56C0C0C4&compId=BSS127H6327XTSA2.pdf?ci_sign=b4356276ecc1ec69160130555772bdadebee35de Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 500Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 3361 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
230+0.31 EUR
281+0.25 EUR
332+0.22 EUR
391+0.18 EUR
562+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 167
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BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4 Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
334+0.21 EUR
556+0.13 EUR
685+0.1 EUR
Mindestbestellmenge: 209
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IHW20N120R5XKSA1 IHW20N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9BE52A653EB120D3&compId=IHW20N120R5.pdf?ci_sign=9078d3fe050273e18820feb3c35340de2d9578db Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 440ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.39 EUR
22+3.35 EUR
24+3.05 EUR
Mindestbestellmenge: 17
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IRF7317TRPBF IRF7317TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219E27805D24F1A303005056AB0C4F&compId=irf7317pbf.pdf?ci_sign=64d961be387dcb2a1a46361559a7321aeb6a99b6 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2110SPBF IRS2110SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920764F1A6F5005056AB5A8F&compId=irs2110.pdf?ci_sign=d7e6b7c7a85603dbb88ebe28cd2f0be131bac1f8 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
20+3.72 EUR
45+3.22 EUR
Mindestbestellmenge: 17
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IRS2118PBF IRS2118PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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IRS2118SPBF IRS2118SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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BCR116SH6327 BCR116SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
589+0.12 EUR
735+0.097 EUR
Mindestbestellmenge: 455
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BAS16UE6327HTSA1 BAS16UE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7E23E4A19C469&compId=BAS16SH6327XTSA1.pdf?ci_sign=a904eb5d3264ef100a93b9fe2e434293d824a621 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4430 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
455+0.16 EUR
491+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 417
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BAV70UE6327HTSA1 BAV70UE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8091CB2022469&compId=BAV70E6327HTSA1.pdf?ci_sign=9b9bfc3341cea4517c5662670f21967f8db07450 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 8659 Stücke:
Lieferzeit 14-21 Tag (e)
2977+0.024 EUR
Mindestbestellmenge: 2977
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IRLR3114ZTRPBF pVersion=0046&contRep=ZT&docId=E2227F0A43EA42F1A303005056AB0C4F&compId=irlr3114zpbf.pdf?ci_sign=b67d9f56423182b820e3c12a3af3a3ea7058ed1b
IRLR3114ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IHW30N160R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA46CB7F2218BF&compId=IHW30N160R5.pdf?ci_sign=f142f1feb3d530f98974a0719171f909d530cf4d
IHW30N160R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Turn-off time: 411ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.73 EUR
15+5.06 EUR
16+4.5 EUR
30+3.76 EUR
Mindestbestellmenge: 13
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IR2113PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3412F1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=247116e3d5b7bad6858a091480152cfde4abe4bd
IR2113PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
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IRLML9301TRPBF pVersion=0046&contRep=ZT&docId=E2227C86AD25A8F1A303005056AB0C4F&compId=irlml9301pbf.pdf?ci_sign=cff5d3a9e1fb1b7e0e7544975a7831b46000b145
IRLML9301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 7975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
268+0.27 EUR
382+0.19 EUR
443+0.16 EUR
596+0.12 EUR
1000+0.11 EUR
3000+0.093 EUR
6000+0.087 EUR
Mindestbestellmenge: 193
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SMBT2222AE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7FFBA97A00469&compId=SMBT2222AE6327.pdf?ci_sign=e947f7e7ed39cabf58351392c21760d8d29d3c84
SMBT2222AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Produkt ist nicht verfügbar
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BSC040N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E7B9E48F611C&compId=BSC040N10NS5-DTE.pdf?ci_sign=1afe5a86553b823be907139a75c36c5eed705e55
BSC040N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSZ440N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA51E41005A11C&compId=BSZ440N10NS3G-DTE.pdf?ci_sign=346209358a53e8d09666903e8b3a2cdcaef96bb8
BSZ440N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 5899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
90+0.8 EUR
91+0.79 EUR
Mindestbestellmenge: 77
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IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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PVT412LSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D189AB1E21EC&compId=pvt412.pdf?ci_sign=8a606da7add791abdac6d3bf1a684622fceaac0c
PVT412LSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.48 EUR
15+5 EUR
Mindestbestellmenge: 12
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IDWD40G120C5XKSA1 Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
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IR2132SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4
IR2132SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.78 EUR
11+6.51 EUR
12+6.03 EUR
25+5.91 EUR
Mindestbestellmenge: 10
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IPB64N25S320ATMA1 infineon-ipb64n25s3-20-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Pulsed drain current: 256A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: OptiMOS® -T
Case: PG-TO263-3-2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 20mΩ
Drain current: 46A
Produkt ist nicht verfügbar
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IRLR9343TRPBF pVersion=0046&contRep=ZT&docId=E22281BCD47E0AF1A303005056AB0C4F&compId=irlr9343pbf.pdf?ci_sign=75d97c5ddc279c59419ed2ddad89b8f640b34891
IRLR9343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IR2136SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97
IR2136SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.19 EUR
Mindestbestellmenge: 10
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IR2136STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97
IR2136STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Produkt ist nicht verfügbar
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2N7002H6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5C2CA4584F10B&compId=2N7002H6327XTSA2.pdf?ci_sign=329548fe42e8d9dcb0858f8ddae70fe1ac08d7bb
2N7002H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5827 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
610+0.12 EUR
676+0.11 EUR
916+0.078 EUR
1053+0.068 EUR
1421+0.05 EUR
1471+0.049 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
AUIRGP35B60PD pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC7325BAA9773D7&compId=AUIRGP35B60PD.pdf?ci_sign=a814561838fdc4c27889b131942746e92013c0b3
AUIRGP35B60PD
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1405PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB69F1A6F5005056AB5A8F&compId=irf1405.pdf?ci_sign=de55851dabce3431b508ff257378e49731e4e7e9
IRF1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 170nC
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
33+2.2 EUR
41+1.76 EUR
53+1.36 EUR
100+1.1 EUR
500+1.04 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRF1405STRLPBF pVersion=0046&contRep=ZT&docId=E21F5DCEDEDF06F1A303005056AB0C4F&compId=irf1405spbf.pdf?ci_sign=8ffb81f923f936adf8e3205c35e37a3d5a64cf83
IRF1405STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1405ZPBF pVersion=0046&contRep=ZT&docId=E21F5DE6DA3AF1F1A303005056AB0C4F&compId=irf1405zpbf.pdf?ci_sign=e3a2c165305a26dfb16ddc05272a36952c1eb65f
IRF1405ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
46+1.56 EUR
50+1.52 EUR
100+1.44 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRS44273LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF149F8AD1575EA&compId=IRS44273LTRPBF.pdf?ci_sign=0811e9e8216aae8fdb7f04e8f1b695bc97deadfd
IRS44273LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
Supply voltage: 9.2...20V DC
Topology: single transistor
Number of channels: 1
auf Bestellung 1453 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
105+0.69 EUR
115+0.63 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064PBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
20+3.62 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRS2106SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7456TRPBF pVersion=0046&contRep=ZT&docId=E221A3B5252434F1A303005056AB0C4F&compId=irf7456pbf.pdf?ci_sign=20eed7c0bcf4bf49fd28c8d398cd07cb3486fafc
IRF7456TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4115PBF pVersion=0046&contRep=ZT&docId=005056AB281E1EDF92803E4748AD20D6&compId=IRFB4115.pdf?ci_sign=a357cd38840e146aca5baa544c6a049cd1055155
IRFB4115PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 516 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
26+2.79 EUR
27+2.73 EUR
28+2.65 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BCV47E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae
BCV47E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 7542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
376+0.19 EUR
583+0.12 EUR
770+0.093 EUR
1000+0.084 EUR
3000+0.073 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
SPW47N60C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74E879E8C75EA&compId=SPW47N60C3.pdf?ci_sign=1a73e65522ac6237960a368d454b3746e49500ae
SPW47N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 222 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.84 EUR
10+12.4 EUR
30+11.81 EUR
120+10.61 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SPW47N60CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC092237EC5C143&compId=SPW47N60CFD.pdf?ci_sign=c0df2ab8085e621354099569b122d97599ed0c0d
SPW47N60CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7259-3GE pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0E450A8D76A14&compId=TLE7259-3.pdf?ci_sign=938ffa7d89771037b59075fcaeb1333d803a8dcf
TLE7259-3GE
Hersteller: INFINEON TECHNOLOGIES
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 5mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...27V DC
Interface: LIN
auf Bestellung 2391 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
59+1.23 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IRFR024NTRPBF description pVersion=0046&contRep=ZT&docId=E221BF5C458C24F1A303005056AB0C4F&compId=irfr024npbf.pdf?ci_sign=9b1c86bd4b0622dc63c7904ce4b9483a8f5c26cd
IRFR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 8560 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
183+0.39 EUR
194+0.37 EUR
199+0.36 EUR
205+0.35 EUR
250+0.34 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
IR2118SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 105ns
Turn-on time: 125ns
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Case: SO8
Voltage class: 600V
Kind of integrated circuit: gate driver; high-side
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IR2301SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c
IR2301SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Output current: -0.35...0.2A
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
46+1.57 EUR
51+1.42 EUR
54+1.33 EUR
95+1.26 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IR2304SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA49DF8BDAB53D7&compId=ir2304.pdf?ci_sign=7f72118dd22d9864326e5acc4031a73c65be54a0
IR2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IR2308SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6
IR2308SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Output current: -0.35...0.2A
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM30F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5B09CEE67DE28&compId=IKCM30F60GA.pdf?ci_sign=783f1af8ac5ce8035a854959701563b15dac9467
IKCM30F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Topology: IGBT three-phase bridge; thermistor
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Case: PG-MDIP24
Mounting: THT
Operating temperature: -40...125°C
Output current: -20...20A
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 30.3W
Voltage class: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Protection: anti-overload OPP; undervoltage UVP
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.5 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
ICE2PCS01GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED782B105FA65B54259&compId=ICE2PCS01G.pdf?ci_sign=c1d3e9b38604e08af0a8c32c9b4c5de70405956e
ICE2PCS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
ICE2PCS05GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Output current: -1.5...2A
auf Bestellung 2361 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
65+1.1 EUR
70+1.03 EUR
79+0.92 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7437PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAA67076835EA&compId=IRFB7437PBF.pdf?ci_sign=b3843ba8ed4017c3b389d86bb5aa3a62671a2a3e
IRFB7437PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
60+1.21 EUR
83+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IR21834SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA37A807C1553D7&compId=IR2183SPBF.pdf?ci_sign=1842ad47fa85b992a3d7b9b7c6d4ee278eb4f9ff
IR21834SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC84639C915820&compId=IHW30N120R5.pdf?ci_sign=89c6f0bb98f687ad7406821198f0deac2a7ce69f
IHW30N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N06S5L073ATMA1 Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N06S5N074ATMA1 Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA060N06NM5SXKSA1 Infineon-IPA060N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cebbb676e20
IPA060N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 224A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPA060N06NXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9AD58F7ECE11C&compId=IPA060N06N-DTE.pdf?ci_sign=de88a38c0543e10336c2f0466946c10e8480c91d
IPA060N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z24NPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B672F1A6F5005056AB5A8F&compId=irf9z24n.pdf?ci_sign=86417c6f7b297148bbf68c7249788f86ad2c878e
IRF9Z24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 12.7nC
Kind of package: tube
auf Bestellung 1232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
139+0.52 EUR
150+0.48 EUR
250+0.43 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z24NSTRLPBF Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6404E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 5039 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
611+0.12 EUR
782+0.092 EUR
820+0.087 EUR
1034+0.069 EUR
1145+0.062 EUR
1323+0.054 EUR
1397+0.051 EUR
3000+0.05 EUR
Mindestbestellmenge: 611
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IRLR3410TRPBF description pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1644 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
125+0.57 EUR
135+0.53 EUR
143+0.5 EUR
222+0.32 EUR
234+0.31 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRRPBF pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a
IRLR3410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS127H6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9BA476E56C0C0C4&compId=BSS127H6327XTSA2.pdf?ci_sign=b4356276ecc1ec69160130555772bdadebee35de
BSS127H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 500Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 3361 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
230+0.31 EUR
281+0.25 EUR
332+0.22 EUR
391+0.18 EUR
562+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
BAR6402VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE257368F11B3D7&compId=BAR64xx_Ser.pdf?ci_sign=5ddb896d59e4449eeed45a0a4e6ecd73b8aafbe4
BAR6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
334+0.21 EUR
556+0.13 EUR
685+0.1 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9BE52A653EB120D3&compId=IHW20N120R5.pdf?ci_sign=9078d3fe050273e18820feb3c35340de2d9578db
IHW20N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 440ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.39 EUR
22+3.35 EUR
24+3.05 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRF7317TRPBF description pVersion=0046&contRep=ZT&docId=E2219E27805D24F1A303005056AB0C4F&compId=irf7317pbf.pdf?ci_sign=64d961be387dcb2a1a46361559a7321aeb6a99b6
IRF7317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2110SPBF description pVersion=0046&contRep=ZT&docId=E1C04EA1920764F1A6F5005056AB5A8F&compId=irs2110.pdf?ci_sign=d7e6b7c7a85603dbb88ebe28cd2f0be131bac1f8
IRS2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
20+3.72 EUR
45+3.22 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118PBF pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c
IRS2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118SPBF pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c
IRS2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR116SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A855CB83C469&compId=BCR116.pdf?ci_sign=a78e489564578293eaf65f4f39e0f0f381214f35
BCR116SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
589+0.12 EUR
735+0.097 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BAS16UE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7E23E4A19C469&compId=BAS16SH6327XTSA1.pdf?ci_sign=a904eb5d3264ef100a93b9fe2e434293d824a621
BAS16UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
455+0.16 EUR
491+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BAV70UE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8091CB2022469&compId=BAV70E6327HTSA1.pdf?ci_sign=9b9bfc3341cea4517c5662670f21967f8db07450
BAV70UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 8659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2977+0.024 EUR
Mindestbestellmenge: 2977
Im Einkaufswagen  Stück im Wert von  UAH
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