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IRFZ24NPBF IRFZ24NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055A2F1A6F5005056AB5A8F&compId=irfz24n.pdf?ci_sign=035e258bd6fdc5de7520892f865a0f577cbf21f3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 439 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.80 EUR
179+0.40 EUR
216+0.33 EUR
228+0.31 EUR
Mindestbestellmenge: 90
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ICE2QR2280ZXKLA1
+1
 		ICE2QR2280ZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9CA1DEB7370760C7&compId=ICE2QR2280Z.pdf?ci_sign=0afed20d41bae5cd14e264b6ccdd85b7a6c8c567 Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP7; 10.5÷25VDC; SMPS; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Frequency: 39...65kHz
Operating voltage: 10.5...25V DC
Application: SMPS
Breakdown voltage: 800V
Input voltage: 85...265V
Topology: flyback
Produkt ist nicht verfügbar
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IR2110PBF IR2110PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: tube
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP14
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.6W
Type of integrated circuit: driver
auf Bestellung 989 Stücke:
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18+4.15 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 18
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IR2110SPBF IR2110SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: tube
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO16-W
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.25W
Type of integrated circuit: driver
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.75 EUR
35+2.10 EUR
36+1.99 EUR
Mindestbestellmenge: 16
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IR2110STRPBF IR2110STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFF28572095EA&compId=IR2110STRPBF.pdf?ci_sign=df9d8034c817d5f92fb697b53c8f2c84160d7ab0 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: reel; tape
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO16-W
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.25W
Type of integrated circuit: driver
auf Bestellung 199 Stücke:
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20+3.60 EUR
37+1.97 EUR
39+1.86 EUR
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IHW20N135R5XKSA1 IHW20N135R5XKSA1 INFINEON TECHNOLOGIES IHW20N135R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.38 EUR
19+3.76 EUR
Mindestbestellmenge: 17
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1EDN7512BXTSA1 1EDN7512BXTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA6801DE546FA40D3&compId=1EDN751x_1EDN851x.pdf?ci_sign=f7b6a61fa03f50b5c2e4aa8ce8e4947eacc724c2 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
auf Bestellung 2630 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
83+0.86 EUR
114+0.63 EUR
122+0.59 EUR
500+0.57 EUR
Mindestbestellmenge: 69
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IRLML0040TRPBF IRLML0040TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227B695F4D11F1A303005056AB0C4F&compId=irlml0040pbf.pdf?ci_sign=5d1842c3e30491551ce56d3423793e0f8c415056 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4419 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
210+0.34 EUR
304+0.24 EUR
350+0.20 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 129
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IRLML0100TRPBF IRLML0100TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825E0F1A6F5005056AB5A8F&compId=irlml0100pbf.pdf?ci_sign=bdf83814bed85f72f3cd88c4059bcf2266d07f53 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 13509 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
191+0.38 EUR
237+0.30 EUR
269+0.27 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 167
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IRLML6244TRPBF IRLML6244TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227BEF25F70EF1A303005056AB0C4F&compId=irlml6244pbf.pdf?ci_sign=9e9a5be7e3521f0951b398d6655e0c43901db19e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.9nC
On-state resistance: 21mΩ
Gate-source voltage: ±12V
auf Bestellung 15148 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
236+0.30 EUR
329+0.22 EUR
379+0.19 EUR
878+0.08 EUR
926+0.08 EUR
Mindestbestellmenge: 157
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IRLML6246TRPBF IRLML6246TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C073DE4D1F1A303005056AB0C4F&compId=irlml6246pbf.pdf?ci_sign=081a27482ca02397f5d07cd5b22cc57d56db8087 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3.5nC
On-state resistance: 46mΩ
Gate-source voltage: ±12V
auf Bestellung 2946 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
274+0.26 EUR
387+0.19 EUR
450+0.16 EUR
933+0.08 EUR
987+0.07 EUR
Mindestbestellmenge: 167
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IRLML6302PBF IRLML6302PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58260AF1A6F5005056AB5A8F&compId=irlml6302.pdf?ci_sign=7f43a566c70f26b0887c4ecc5e40dcaf741cf68e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.4nC
On-state resistance: 0.6Ω
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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IRLML6302TRPBF IRLML6302TRPBF INFINEON TECHNOLOGIES irlml6302pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.78A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.78A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
Mindestbestellmenge: 67
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IRLML6346TRPBF IRLML6346TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C53954049F1A303005056AB0C4F&compId=irlml6346pbf.pdf?ci_sign=f015b0982e28988fc6ffca7b5cd078a776e1cb3e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.9nC
On-state resistance: 80mΩ
Gate-source voltage: ±12V
Pulsed drain current: 17A
auf Bestellung 13271 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
277+0.26 EUR
400+0.18 EUR
468+0.15 EUR
658+0.11 EUR
695+0.10 EUR
1500+0.10 EUR
Mindestbestellmenge: 179
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BC848BE6327HTSA1 BC848BE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
1060+0.07 EUR
1180+0.06 EUR
1400+0.05 EUR
1480+0.05 EUR
Mindestbestellmenge: 1060
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IRLR2908TRPBF IRLR2908TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227E975B7441F1A303005056AB0C4F&compId=irlr2908pbf.pdf?ci_sign=275f9ac53c05c9fd8c3c2f0f94cbd4958816eab3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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SMBT2907AE6327HTSA1 SMBT2907AE6327HTSA1 INFINEON TECHNOLOGIES SMBT2907AE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
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IRS2003STRPBF IRS2003STRPBF INFINEON TECHNOLOGIES irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
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IRS2005STRPBF IRS2005STRPBF INFINEON TECHNOLOGIES irs2005s.pdf?fileId=5546d462533600a4015364c4246229e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
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IRS2007SPBF IRS2007SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE991DE094AADB658BF&compId=IRS2007SPBF.pdf?ci_sign=23f41c499e549f21ad84d82168dfac72ba4d0a9a Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
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IRS2008SPBF IRS2008SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE989A63D80180FB8BF&compId=IRS2008S.pdf?ci_sign=519175befe37f294a90d6c6f0b0c696fd6b6a464 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
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IRS2011PBF IRS2011PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E26C2F1A6F5005056AB5A8F&compId=irs2011pbf.pdf?ci_sign=8b98cbb48fac23b5d243658ba2d04bebde43ddae description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 1W
Turn-on time: 85ns
Turn-off time: 75ns
Output current: -1...1A
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
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IRS2093MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DAA4BA9F0B553D7&compId=IRS2093MTRPBF.pdf?ci_sign=e52fc9498b4cbd2fd8fae90e4df59b8441159497 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF7343TRPBF IRF7343TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A084E32E22F1A303005056AB0C4F&compId=irf7343pbf.pdf?ci_sign=67f4a0e09b642d9ef37643bc443a2be3f815f7f4 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
On-state resistance: 50/105mΩ
auf Bestellung 6595 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
67+1.07 EUR
175+0.41 EUR
186+0.39 EUR
Mindestbestellmenge: 47
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AUIRF7343QTR AUIRF7343QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7456F1A6F5005056AB5A8F&compId=auirf7343q.pdf?ci_sign=5951c580d1ae312f0ff808d6dd1ff22fd4d1e9c4 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7342TRPBF IRF7342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A06CFD47F4F1A303005056AB0C4F&compId=irf7342pbf.pdf?ci_sign=5924d7d1d4a809afdcc49f81c65ec7a6300718f9 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -55V
Drain current: -3.4A
auf Bestellung 10791 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
76+0.95 EUR
158+0.45 EUR
167+0.43 EUR
4000+0.41 EUR
Mindestbestellmenge: 55
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AUIRF7342QTR AUIRF7342QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7448F1A6F5005056AB5A8F&compId=auirf7342q.pdf?ci_sign=97ff50904365263a4dbd19246af4cbb382583c69 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 26nC
Produkt ist nicht verfügbar
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IGU04N60TAKMA1 IGU04N60TAKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB911564631820&compId=IGU04N60T.pdf?ci_sign=79c5db7457acfb90f2cffa20ce08bfdc7e4fa5bb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO251
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 42W
Case: TO251
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 207ns
Technology: TRENCHSTOP™
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.30 EUR
66+1.09 EUR
92+0.78 EUR
97+0.74 EUR
Mindestbestellmenge: 55
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IKD04N60RATMA1 IKD04N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDA3E2ACF23820&compId=IKD04N60R.pdf?ci_sign=6efd6340cc350b45c24c45eb5a27009029527dee Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 317ns
Technology: TRENCHSTOP™ RC
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
65+1.10 EUR
121+0.59 EUR
128+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 41
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IKP04N60TXKSA1 IKP04N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE22916DB05820&compId=IKP04N60T.pdf?ci_sign=79887e35e97dee3f47a5ed0ea9755ace78373099 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 21ns
Turn-off time: 207ns
Gate-emitter voltage: ±20V
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
43+1.69 EUR
54+1.33 EUR
Mindestbestellmenge: 28
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IRLR3110ZTRPBF IRLR3110ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227EF45E9F51F1A303005056AB0C4F&compId=irlr3110zpbf.pdf?ci_sign=64c51a4fa3a43285754294102b2ac04ad31b2f21 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.06 EUR
41+1.77 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BAS12504WH6327XTSA1 BAS12504WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.5A
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
114+0.63 EUR
222+0.32 EUR
235+0.30 EUR
1000+0.29 EUR
Mindestbestellmenge: 77
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TLE49462KHTSA1 TLE49462KHTSA1 INFINEON TECHNOLOGIES TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Operating temperature: -40...150°C
Mounting: SMT
Supply voltage: 2.7...18V DC
Kind of sensor: latch
Type of sensor: Hall
Range of detectable magnetic field: -3.5...3.5mT
Case: SC59
auf Bestellung 2699 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
69+1.05 EUR
126+0.57 EUR
133+0.54 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N60TATMA1 IGB15N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31032C72A4FA8&compId=IGB15N60T-DTE.pdf?ci_sign=c8a1ee71983920d8fe021504e43002c04a833b4b Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.49 EUR
35+2.07 EUR
50+1.43 EUR
53+1.36 EUR
Mindestbestellmenge: 29
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IGW75N60H3FKSA1 IGW75N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B381D15C556FA8&compId=IGW75N60H3-DTE.pdf?ci_sign=7a4792dde8410ac51a750f89e8d3fcf950b62f74 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
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IGW75N60TFKSA1 IGW75N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B382A1450FCFA8&compId=IGW75N60T-DTE.pdf?ci_sign=e3398a93286a8c04f59275ea1e9fc67ac59b1506 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.85 EUR
15+4.93 EUR
16+4.66 EUR
60+4.49 EUR
Mindestbestellmenge: 11
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IKA15N60TXKSA1 IKA15N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD1E877C847820&compId=IKA15N60T.pdf?ci_sign=ce907b1e3bd538123e3a5020ae0c7b1b51be7942 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 10.6A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Produkt ist nicht verfügbar
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IKB15N60TATMA1 IKB15N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD41F72CB29820&compId=IKB15N60T.pdf?ci_sign=9b743b6df9c5530ebc7f8eee8c1770ec9a429f91 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
22+3.29 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 20
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IKD15N60RATMA1 IKD15N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF1E34C9ED820&compId=IKD15N60R.pdf?ci_sign=edf8c9498bddcc0bab7c28dab797b14b4d8a5a23 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 319ns
Technology: TRENCHSTOP™ RC
auf Bestellung 1976 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.87 EUR
39+1.87 EUR
47+1.54 EUR
49+1.47 EUR
100+1.42 EUR
Mindestbestellmenge: 25
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IKD15N60RFATMA1 IKD15N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF85E72955820&compId=IKD15N60RF.pdf?ci_sign=9b3a2a6a184bf30583c6686dacdbdd53ba4602b7 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 177ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N60TXKSA1 IKP15N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AAA8A5633DFAB1CC&compId=IKP15N60T-DTE.pdf?ci_sign=042facda16ad84d72f77461b1b1d79ca587b8db6 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.45 EUR
37+1.96 EUR
48+1.52 EUR
50+1.43 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60H3FKSA1 IKW75N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAE85A51BBA3C0C4&compId=IKW75N60H3FKSA1.pdf?ci_sign=26e674065a5fc9a3c806e501745195e426f3ee35 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 85ns
Turn-off time: 332ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.34 EUR
10+7.32 EUR
Mindestbestellmenge: 7
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FS100R12W2T7B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IRFR3806TRPBF IRFR3806TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4267944F2F1A303005056AB0C4F&compId=irfr3806pbf.pdf?ci_sign=5912a651f6a7bf97e992ea9475436898f0845fbd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Case: DPAK
Drain-source voltage: 60V
Drain current: 43A
Type of transistor: N-MOSFET
Power dissipation: 71W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.67 EUR
64+1.13 EUR
138+0.52 EUR
146+0.49 EUR
Mindestbestellmenge: 43
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IRFU9024NPBF IRFU9024NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D50559BF1A6F5005056AB5A8F&compId=irfr9024n.pdf?ci_sign=e676952b8a6a14a6d0b9ff8eafc4cbd4f96826fd description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
116+0.62 EUR
196+0.37 EUR
207+0.35 EUR
Mindestbestellmenge: 97
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BAS28E6327HTSA1 BAS28E6327HTSA1 INFINEON TECHNOLOGIES BAS28E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Kind of package: reel; tape
Power dissipation: 0.33W
auf Bestellung 2951 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
265+0.27 EUR
414+0.17 EUR
658+0.11 EUR
695+0.10 EUR
Mindestbestellmenge: 193
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BAV170E6327HTSA1 BAV170E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2BEA44BDB8469&compId=BAV170E6327.pdf?ci_sign=c347e245b0638e8d11b19d03a57c8b8039a8d928 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
321+0.22 EUR
499+0.14 EUR
600+0.12 EUR
1341+0.05 EUR
1421+0.05 EUR
Mindestbestellmenge: 218
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BAV199E6327HTSA1 BAV199E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2C3DBB9E0C469&compId=BAV199E6327.pdf?ci_sign=a1da7bd8c1599beff66feab99d3a7e5a0640bba5 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; SOT23; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Semiconductor structure: double series
Case: SOT23
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 4839 Stücke:
Lieferzeit 14-21 Tag (e)
325+0.22 EUR
498+0.14 EUR
556+0.13 EUR
655+0.11 EUR
1450+0.05 EUR
1534+0.05 EUR
Mindestbestellmenge: 325
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BSS126H6327XTSA2 BSS126H6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77048F4AD011C&compId=BSS126H6327XTSA2.pdf?ci_sign=a8118681e49b825d7c988d404c2198fcba1dd1cf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 700Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 2471 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
133+0.54 EUR
156+0.46 EUR
228+0.31 EUR
277+0.26 EUR
291+0.25 EUR
Mindestbestellmenge: 100
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ICE3BR4765JGXUMA1 ICE3BR4765JGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE30FC061DBA259&compId=ICE3BR4765JG.pdf?ci_sign=95a7f62974d2cfe45acb074f63d500b1e43f11f2 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 2.32A
auf Bestellung 2094 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
43+1.70 EUR
48+1.52 EUR
50+1.43 EUR
500+1.37 EUR
Mindestbestellmenge: 40
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ICE3PCS01G ICE3PCS01G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A1FC0F2E8259&compId=ICE3PCS01G.pdf?ci_sign=c391d469f96c741ae49b2f5803c8ebf735bcd417 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1662 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.20 EUR
40+1.82 EUR
42+1.72 EUR
1000+1.64 EUR
Mindestbestellmenge: 18
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ICE3PCS02GXUMA1 ICE3PCS02GXUMA1 INFINEON TECHNOLOGIES Infineon-ICE3PCS02-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67fab472b4b Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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ICE3PCS03GXUMA1 ICE3PCS03GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A4F0D40C8259&compId=ICE3PCS03G.pdf?ci_sign=681fdf327e579491c7b3fdba419e20770ca4b24b Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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IR2103STRPBF IR2103STRPBF INFINEON TECHNOLOGIES ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
44+1.63 EUR
52+1.40 EUR
54+1.33 EUR
100+1.32 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFS3607TRLPBF IRFS3607TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C788DD8CBFF1A303005056AB0C4F&compId=irfs3607pbf.pdf?ci_sign=bd195fc092e1dd6bd534dd7e189505e734d16645 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFU3607PBF IRFU3607PBF INFINEON TECHNOLOGIES irfr3607pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
Case: IPAK
Drain-source voltage: 75V
Drain current: 80A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 56nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IRF5801TRPBF IRF5801TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F65AA430653F1A303005056AB0C4F&compId=irf5801pbf.pdf?ci_sign=f7e5c67b927b2f01bfff7333591905e81fb2e857 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2854 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
171+0.42 EUR
187+0.38 EUR
315+0.23 EUR
332+0.22 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
BFP420FH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA6802EB73DEAE0D3&compId=BFP420F.pdf?ci_sign=afe946604d1ec31861261cc2d930ed7d8b1c36f1 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: TSFP-4
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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BFP420H6327XTSA1 BFP420H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD1BBF77AAA60D4&compId=BFP420.pdf?ci_sign=d4cbda62faac15f665da1a426c49eaee3d955f1b Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: SOT343
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
auf Bestellung 5129 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
164+0.44 EUR
180+0.40 EUR
199+0.36 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ44NPBF IRLZ44NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E267CF1A6F5005056AB5A8F&compId=irlz44n.pdf?ci_sign=29c4c6da092dd5917ede6f2c8e0f88e0cbd6dda1 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Case: TO220AB
Technology: HEXFET®
Mounting: THT
Kind of package: tube
Drain-source voltage: 55V
Drain current: 41A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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IRFZ24NPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D5055A2F1A6F5005056AB5A8F&compId=irfz24n.pdf?ci_sign=035e258bd6fdc5de7520892f865a0f577cbf21f3
IRFZ24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 439 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.80 EUR
179+0.40 EUR
216+0.33 EUR
228+0.31 EUR
Mindestbestellmenge: 90
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ICE2QR2280ZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9CA1DEB7370760C7&compId=ICE2QR2280Z.pdf?ci_sign=0afed20d41bae5cd14e264b6ccdd85b7a6c8c567
ICE2QR2280ZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP7; 10.5÷25VDC; SMPS; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Frequency: 39...65kHz
Operating voltage: 10.5...25V DC
Application: SMPS
Breakdown voltage: 800V
Input voltage: 85...265V
Topology: flyback
Produkt ist nicht verfügbar
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IR2110PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee
IR2110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: tube
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP14
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.6W
Type of integrated circuit: driver
auf Bestellung 989 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 18
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IR2110SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee
IR2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: tube
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO16-W
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.25W
Type of integrated circuit: driver
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
35+2.10 EUR
36+1.99 EUR
Mindestbestellmenge: 16
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IR2110STRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFF28572095EA&compId=IR2110STRPBF.pdf?ci_sign=df9d8034c817d5f92fb697b53c8f2c84160d7ab0
IR2110STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: reel; tape
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO16-W
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.25W
Type of integrated circuit: driver
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.60 EUR
37+1.97 EUR
39+1.86 EUR
Mindestbestellmenge: 20
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IHW20N135R5XKSA1 IHW20N135R5.pdf
IHW20N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.38 EUR
19+3.76 EUR
Mindestbestellmenge: 17
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1EDN7512BXTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA6801DE546FA40D3&compId=1EDN751x_1EDN851x.pdf?ci_sign=f7b6a61fa03f50b5c2e4aa8ce8e4947eacc724c2
1EDN7512BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
auf Bestellung 2630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
83+0.86 EUR
114+0.63 EUR
122+0.59 EUR
500+0.57 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0040TRPBF pVersion=0046&contRep=ZT&docId=E2227B695F4D11F1A303005056AB0C4F&compId=irlml0040pbf.pdf?ci_sign=5d1842c3e30491551ce56d3423793e0f8c415056
IRLML0040TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4419 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
210+0.34 EUR
304+0.24 EUR
350+0.20 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 129
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IRLML0100TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F5825E0F1A6F5005056AB5A8F&compId=irlml0100pbf.pdf?ci_sign=bdf83814bed85f72f3cd88c4059bcf2266d07f53
IRLML0100TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 13509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
191+0.38 EUR
237+0.30 EUR
269+0.27 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6244TRPBF pVersion=0046&contRep=ZT&docId=E2227BEF25F70EF1A303005056AB0C4F&compId=irlml6244pbf.pdf?ci_sign=9e9a5be7e3521f0951b398d6655e0c43901db19e
IRLML6244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.9nC
On-state resistance: 21mΩ
Gate-source voltage: ±12V
auf Bestellung 15148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
236+0.30 EUR
329+0.22 EUR
379+0.19 EUR
878+0.08 EUR
926+0.08 EUR
Mindestbestellmenge: 157
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IRLML6246TRPBF pVersion=0046&contRep=ZT&docId=E2227C073DE4D1F1A303005056AB0C4F&compId=irlml6246pbf.pdf?ci_sign=081a27482ca02397f5d07cd5b22cc57d56db8087
IRLML6246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3.5nC
On-state resistance: 46mΩ
Gate-source voltage: ±12V
auf Bestellung 2946 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
274+0.26 EUR
387+0.19 EUR
450+0.16 EUR
933+0.08 EUR
987+0.07 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6302PBF pVersion=0046&contRep=ZT&docId=E1C04E8F58260AF1A6F5005056AB5A8F&compId=irlml6302.pdf?ci_sign=7f43a566c70f26b0887c4ecc5e40dcaf741cf68e
IRLML6302PBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.4nC
On-state resistance: 0.6Ω
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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IRLML6302TRPBF irlml6302pbf.pdf
IRLML6302TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.78A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.78A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6346TRPBF pVersion=0046&contRep=ZT&docId=E2227C53954049F1A303005056AB0C4F&compId=irlml6346pbf.pdf?ci_sign=f015b0982e28988fc6ffca7b5cd078a776e1cb3e
IRLML6346TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 2.9nC
On-state resistance: 80mΩ
Gate-source voltage: ±12V
Pulsed drain current: 17A
auf Bestellung 13271 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
277+0.26 EUR
400+0.18 EUR
468+0.15 EUR
658+0.11 EUR
695+0.10 EUR
1500+0.10 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BC848BE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC848BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1060+0.07 EUR
1180+0.06 EUR
1400+0.05 EUR
1480+0.05 EUR
Mindestbestellmenge: 1060
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2908TRPBF pVersion=0046&contRep=ZT&docId=E2227E975B7441F1A303005056AB0C4F&compId=irlr2908pbf.pdf?ci_sign=275f9ac53c05c9fd8c3c2f0f94cbd4958816eab3
IRLR2908TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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SMBT2907AE6327HTSA1 SMBT2907AE6327.pdf
SMBT2907AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2003STRPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2005STRPBF irs2005s.pdf?fileId=5546d462533600a4015364c4246229e1
IRS2005STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2007SPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE991DE094AADB658BF&compId=IRS2007SPBF.pdf?ci_sign=23f41c499e549f21ad84d82168dfac72ba4d0a9a
IRS2007SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 160ns
Turn-off time: 150ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2008SPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE989A63D80180FB8BF&compId=IRS2008S.pdf?ci_sign=519175befe37f294a90d6c6f0b0c696fd6b6a464
IRS2008SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Output current: -600...290mA
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2011PBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E26C2F1A6F5005056AB5A8F&compId=irs2011pbf.pdf?ci_sign=8b98cbb48fac23b5d243658ba2d04bebde43ddae
IRS2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 200V
Operating temperature: -40...125°C
Power: 1W
Turn-on time: 85ns
Turn-off time: 75ns
Output current: -1...1A
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2093MTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DAA4BA9F0B553D7&compId=IRS2093MTRPBF.pdf?ci_sign=e52fc9498b4cbd2fd8fae90e4df59b8441159497
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7343TRPBF description pVersion=0046&contRep=ZT&docId=E221A084E32E22F1A303005056AB0C4F&compId=irf7343pbf.pdf?ci_sign=67f4a0e09b642d9ef37643bc443a2be3f815f7f4
IRF7343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
On-state resistance: 50/105mΩ
auf Bestellung 6595 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
67+1.07 EUR
175+0.41 EUR
186+0.39 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7343QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D7456F1A6F5005056AB5A8F&compId=auirf7343q.pdf?ci_sign=5951c580d1ae312f0ff808d6dd1ff22fd4d1e9c4
AUIRF7343QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7342TRPBF pVersion=0046&contRep=ZT&docId=E221A06CFD47F4F1A303005056AB0C4F&compId=irf7342pbf.pdf?ci_sign=5924d7d1d4a809afdcc49f81c65ec7a6300718f9
IRF7342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -55V
Drain current: -3.4A
auf Bestellung 10791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
76+0.95 EUR
158+0.45 EUR
167+0.43 EUR
4000+0.41 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7342QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D7448F1A6F5005056AB5A8F&compId=auirf7342q.pdf?ci_sign=97ff50904365263a4dbd19246af4cbb382583c69
AUIRF7342QTR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 26nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGU04N60TAKMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB911564631820&compId=IGU04N60T.pdf?ci_sign=79c5db7457acfb90f2cffa20ce08bfdc7e4fa5bb
IGU04N60TAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO251
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 42W
Case: TO251
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 207ns
Technology: TRENCHSTOP™
auf Bestellung 213 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.30 EUR
66+1.09 EUR
92+0.78 EUR
97+0.74 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDA3E2ACF23820&compId=IKD04N60R.pdf?ci_sign=6efd6340cc350b45c24c45eb5a27009029527dee
IKD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 317ns
Technology: TRENCHSTOP™ RC
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
65+1.10 EUR
121+0.59 EUR
128+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IKP04N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE22916DB05820&compId=IKP04N60T.pdf?ci_sign=79887e35e97dee3f47a5ed0ea9755ace78373099
IKP04N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Turn-on time: 21ns
Turn-off time: 207ns
Gate-emitter voltage: ±20V
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
43+1.69 EUR
54+1.33 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3110ZTRPBF pVersion=0046&contRep=ZT&docId=E2227EF45E9F51F1A303005056AB0C4F&compId=irlr3110zpbf.pdf?ci_sign=64c51a4fa3a43285754294102b2ac04ad31b2f21
IRLR3110ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 953 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
41+1.77 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BAS12504WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00
BAS12504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.5A
auf Bestellung 2785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
114+0.63 EUR
222+0.32 EUR
235+0.30 EUR
1000+0.29 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
TLE49462KHTSA1 TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f
TLE49462KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Operating temperature: -40...150°C
Mounting: SMT
Supply voltage: 2.7...18V DC
Kind of sensor: latch
Type of sensor: Hall
Range of detectable magnetic field: -3.5...3.5mT
Case: SC59
auf Bestellung 2699 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
69+1.05 EUR
126+0.57 EUR
133+0.54 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IGB15N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31032C72A4FA8&compId=IGB15N60T-DTE.pdf?ci_sign=c8a1ee71983920d8fe021504e43002c04a833b4b
IGB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
35+2.07 EUR
50+1.43 EUR
53+1.36 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B381D15C556FA8&compId=IGW75N60H3-DTE.pdf?ci_sign=7a4792dde8410ac51a750f89e8d3fcf950b62f74
IGW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW75N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B382A1450FCFA8&compId=IGW75N60T-DTE.pdf?ci_sign=e3398a93286a8c04f59275ea1e9fc67ac59b1506
IGW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.85 EUR
15+4.93 EUR
16+4.66 EUR
60+4.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKA15N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD1E877C847820&compId=IKA15N60T.pdf?ci_sign=ce907b1e3bd538123e3a5020ae0c7b1b51be7942
IKA15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 35.7W
Case: TO220-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 10.6A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB15N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD41F72CB29820&compId=IKB15N60T.pdf?ci_sign=9b743b6df9c5530ebc7f8eee8c1770ec9a429f91
IKB15N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 238ns
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.29 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF1E34C9ED820&compId=IKD15N60R.pdf?ci_sign=edf8c9498bddcc0bab7c28dab797b14b4d8a5a23
IKD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 319ns
Technology: TRENCHSTOP™ RC
auf Bestellung 1976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.87 EUR
39+1.87 EUR
47+1.54 EUR
49+1.47 EUR
100+1.42 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDF85E72955820&compId=IKD15N60RF.pdf?ci_sign=9b3a2a6a184bf30583c6686dacdbdd53ba4602b7
IKD15N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 177ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AAA8A5633DFAB1CC&compId=IKP15N60T-DTE.pdf?ci_sign=042facda16ad84d72f77461b1b1d79ca587b8db6
IKP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.45 EUR
37+1.96 EUR
48+1.52 EUR
50+1.43 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAE85A51BBA3C0C4&compId=IKW75N60H3FKSA1.pdf?ci_sign=26e674065a5fc9a3c806e501745195e426f3ee35
IKW75N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-on time: 85ns
Turn-off time: 332ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.34 EUR
10+7.32 EUR
Mindestbestellmenge: 7
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FS100R12W2T7B11BOMA1 Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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IRFR3806TRPBF pVersion=0046&contRep=ZT&docId=E221C4267944F2F1A303005056AB0C4F&compId=irfr3806pbf.pdf?ci_sign=5912a651f6a7bf97e992ea9475436898f0845fbd
IRFR3806TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Case: DPAK
Drain-source voltage: 60V
Drain current: 43A
Type of transistor: N-MOSFET
Power dissipation: 71W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
64+1.13 EUR
138+0.52 EUR
146+0.49 EUR
Mindestbestellmenge: 43
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IRFU9024NPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D50559BF1A6F5005056AB5A8F&compId=irfr9024n.pdf?ci_sign=e676952b8a6a14a6d0b9ff8eafc4cbd4f96826fd
IRFU9024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
116+0.62 EUR
196+0.37 EUR
207+0.35 EUR
Mindestbestellmenge: 97
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BAS28E6327HTSA1 BAS28E6327HTSA1.pdf
BAS28E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Kind of package: reel; tape
Power dissipation: 0.33W
auf Bestellung 2951 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
265+0.27 EUR
414+0.17 EUR
658+0.11 EUR
695+0.10 EUR
Mindestbestellmenge: 193
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BAV170E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2BEA44BDB8469&compId=BAV170E6327.pdf?ci_sign=c347e245b0638e8d11b19d03a57c8b8039a8d928
BAV170E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
321+0.22 EUR
499+0.14 EUR
600+0.12 EUR
1341+0.05 EUR
1421+0.05 EUR
Mindestbestellmenge: 218
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BAV199E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2C3DBB9E0C469&compId=BAV199E6327.pdf?ci_sign=a1da7bd8c1599beff66feab99d3a7e5a0640bba5
BAV199E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; SOT23; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Semiconductor structure: double series
Case: SOT23
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 4839 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
325+0.22 EUR
498+0.14 EUR
556+0.13 EUR
655+0.11 EUR
1450+0.05 EUR
1534+0.05 EUR
Mindestbestellmenge: 325
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BSS126H6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77048F4AD011C&compId=BSS126H6327XTSA2.pdf?ci_sign=a8118681e49b825d7c988d404c2198fcba1dd1cf
BSS126H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.021A
On-state resistance: 700Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
auf Bestellung 2471 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
133+0.54 EUR
156+0.46 EUR
228+0.31 EUR
277+0.26 EUR
291+0.25 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
ICE3BR4765JGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE30FC061DBA259&compId=ICE3BR4765JG.pdf?ci_sign=95a7f62974d2cfe45acb074f63d500b1e43f11f2
ICE3BR4765JGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 2.32A
auf Bestellung 2094 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
43+1.70 EUR
48+1.52 EUR
50+1.43 EUR
500+1.37 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
ICE3PCS01G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A1FC0F2E8259&compId=ICE3PCS01G.pdf?ci_sign=c391d469f96c741ae49b2f5803c8ebf735bcd417
ICE3PCS01G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1662 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.20 EUR
40+1.82 EUR
42+1.72 EUR
1000+1.64 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
ICE3PCS02GXUMA1 Infineon-ICE3PCS02-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129a67fab472b4b
ICE3PCS02GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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ICE3PCS03GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE3A4F0D40C8259&compId=ICE3PCS03G.pdf?ci_sign=681fdf327e579491c7b3fdba419e20770ca4b24b
ICE3PCS03GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
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IR2103STRPBF description ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
44+1.63 EUR
52+1.40 EUR
54+1.33 EUR
100+1.32 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFS3607TRLPBF pVersion=0046&contRep=ZT&docId=E221C788DD8CBFF1A303005056AB0C4F&compId=irfs3607pbf.pdf?ci_sign=bd195fc092e1dd6bd534dd7e189505e734d16645
IRFS3607TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFU3607PBF irfr3607pbf.pdf
IRFU3607PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
Case: IPAK
Drain-source voltage: 75V
Drain current: 80A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 56nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF5801TRPBF pVersion=0046&contRep=ZT&docId=E21F65AA430653F1A303005056AB0C4F&compId=irf5801pbf.pdf?ci_sign=f7e5c67b927b2f01bfff7333591905e81fb2e857
IRF5801TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2854 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
171+0.42 EUR
187+0.38 EUR
315+0.23 EUR
332+0.22 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
BFP420FH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA6802EB73DEAE0D3&compId=BFP420F.pdf?ci_sign=afe946604d1ec31861261cc2d930ed7d8b1c36f1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: TSFP-4
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP420H6327XTSA1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD1BBF77AAA60D4&compId=BFP420.pdf?ci_sign=d4cbda62faac15f665da1a426c49eaee3d955f1b
BFP420H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: SOT343
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
auf Bestellung 5129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
164+0.44 EUR
180+0.40 EUR
199+0.36 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ44NPBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E267CF1A6F5005056AB5A8F&compId=irlz44n.pdf?ci_sign=29c4c6da092dd5917ede6f2c8e0f88e0cbd6dda1
IRLZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Case: TO220AB
Technology: HEXFET®
Mounting: THT
Kind of package: tube
Drain-source voltage: 55V
Drain current: 41A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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