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KIT_XMC11_BOOT_001 KIT_XMC11_BOOT_001 INFINEON TECHNOLOGIES KIT-XMC11-BOOT-001-DTE.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED x6; SEGGER J-Link OB Debugger; UART
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
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SPD06N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
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BSC150N03LDGATMA1 BSC150N03LDGATMA1 INFINEON TECHNOLOGIES BSC150N03LDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 INFINEON TECHNOLOGIES BSO150N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BAT62E6327HTSA1 BAT62E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0121C5D1FE469&compId=BAT62E6327HTSA1.pdf?ci_sign=ae9af7365eb6533f6d698a4341944e1ebfabda6e Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 20mA
Power dissipation: 0.1W
Max. forward voltage: 1V
Max. off-state voltage: 40V
Semiconductor structure: double independent
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353+0.2 EUR
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447+0.16 EUR
477+0.15 EUR
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BAT6804WH6327XTSA1 BAT6804WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 8V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. forward voltage: 0.5V
Max. off-state voltage: 8V
Semiconductor structure: double series
Type of diode: Schottky switching
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IR21271PBF IR21271PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
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IR21271SPBF IR21271SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
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IR2127PBF IR2127PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
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IR2127SPBF IR2127SPBF INFINEON TECHNOLOGIES ir2127spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
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IR2117PBF IR2117PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: DIP8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
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IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: SO8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
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IR2111PBF IR2111PBF INFINEON TECHNOLOGIES ir2111.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
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IR2111SPBF IR2111SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC01A6BF4675EA&compId=IR2111SPBF.pdf?ci_sign=e56e32f57f9de1414cd99b1b3cad0ce56d1a2232 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 625mW
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BC847PNH6327XTSA1 BC847PNH6327XTSA1 INFINEON TECHNOLOGIES BC846PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
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544+0.13 EUR
1000+0.094 EUR
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BSP125H6327XTSA1 BSP125H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A70B1D8F42B10B&compId=BSP125H6327XTSA1.pdf?ci_sign=8a5ccf72a5d3019ef8a407058267491d6698e74a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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114+0.63 EUR
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BSD235NH6327XTSA1 BSD235NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D9351407710B&compId=BSD235NH6327XTSA1.pdf?ci_sign=a8d66b3001a4107b60a345b215d15bbd6fd4e9b1 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Case: SOT363
Mounting: SMD
Power dissipation: 0.5W
On-state resistance: 0.35Ω
Drain current: 0.95A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
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454+0.16 EUR
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BSD840NH6327XTSA1 BSD840NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5EF6CF788910B&compId=BSD840NH6327XTSA1.pdf?ci_sign=5b04d5f43bcba673eb33cf4377e0362af3f23a9e Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 0.88A
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
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305+0.23 EUR
435+0.16 EUR
506+0.14 EUR
618+0.12 EUR
705+0.1 EUR
1000+0.089 EUR
3000+0.083 EUR
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BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7D848CA9B710B&compId=BSS214NWH6327XTSA1.pdf?ci_sign=5c615cce946f0aa6b4aace9b25942d6eab7b2b3c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
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582+0.12 EUR
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1013+0.071 EUR
1109+0.064 EUR
1200+0.06 EUR
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IRL2505STRLPBF INFINEON TECHNOLOGIES irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
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IRF7201TRPBF IRF7201TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC6FF95B2795EA&compId=IRF7201TRPBF.pdf?ci_sign=1faf568f52c19e8c6dcda73263526dccd2553458 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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IRF7205TRPBF IRF7205TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73B8475059F1A303005056AB0C4F&compId=irf7205pbf.pdf?ci_sign=9c16f80a8aabbea691f6d1023906fcaa71ff4780 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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130+0.55 EUR
142+0.5 EUR
250+0.44 EUR
500+0.39 EUR
1000+0.35 EUR
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IPD50N10S3L16ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Technology: OptiMOS® -T
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Pulsed drain current: 200A
Case: PG-TO252-3-11
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 38A
Drain-source voltage: 100V
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IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3717611A24FA8&compId=IGW40N120H3-DTE.pdf?ci_sign=6b7e50c22310b6e9d6b61594307c9e8b688024d8 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Gate-emitter voltage: ±20V
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
auf Bestellung 168 Stücke:
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23+3.19 EUR
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IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFF7BE8F13C749&compId=IKQ40N120CH3.pdf?ci_sign=c8ed0c89fcc600022b2a871e0b32fde7f3676f73 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Produkt ist nicht verfügbar
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD6AC8EDA0749&compId=IKQ40N120CT2.pdf?ci_sign=8253bd2051f94bd3337d2fb92cd05a3b6edcd14b Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES IKW40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.68 EUR
13+5.88 EUR
14+5.23 EUR
30+4.29 EUR
Mindestbestellmenge: 11
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IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES IKW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
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IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES IKW40N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 165A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.35 EUR
10+7.38 EUR
11+6.65 EUR
Mindestbestellmenge: 9
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IKY40N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF3053B408E7820&compId=IKY40N120CH3.pdf?ci_sign=6f1d0b3f6ef77831abed12e2ffc7daa6f0f4c068 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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IKY40N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF30BD6FCDAB820&compId=IKY40N120CS6.pdf?ci_sign=341ed47cf8e6482e67d81b7d878f560b2cace0b7 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F33308FC6DE11C&compId=IPD090N03LG-DTE.pdf?ci_sign=9a4be819311a50a24b55811cccea1abba829cef9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2156 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
129+0.55 EUR
136+0.53 EUR
155+0.46 EUR
159+0.45 EUR
Mindestbestellmenge: 120
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IRL2203NSTRLPBF IRL2203NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22272FD5B2EC9F1A303005056AB0C4F&compId=irl2203nspbf.pdf?ci_sign=338ad334b3f34a2957cf0ae5f23cffd55bfac9a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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PVT422PBF PVT422PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.25VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.25V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PVT422SPBF PVT422SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.3 EUR
Mindestbestellmenge: 8
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IGB20N65S5ATMA1 IGB20N65S5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6C96BEB6D820&compId=IGB20N65S5.pdf?ci_sign=a4d8b063edbd433beb9ed958c8c2ba441c0328b3 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 48nC
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-off time: 137ns
Turn-on time: 27ns
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IHW20N65R5XKSA1 IHW20N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC6BCE91BE1820&compId=IHW20N65R5.pdf?ci_sign=b44b2ed99f625095237ebaf7c9ffdee8198ae140 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 97nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-off time: 257ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 48nC
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-off time: 183ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.78 EUR
27+2.66 EUR
Mindestbestellmenge: 19
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SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 INFINEON TECHNOLOGIES SPD50N03S207G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
106+0.67 EUR
112+0.64 EUR
116+0.62 EUR
500+0.6 EUR
Mindestbestellmenge: 103
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BSC050N03LSGATMA1 BSC050N03LSGATMA1 INFINEON TECHNOLOGIES BSC050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSC050N03MSGATMA1 BSC050N03MSGATMA1 INFINEON TECHNOLOGIES BSC050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 INFINEON TECHNOLOGIES BSZ050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 INFINEON TECHNOLOGIES BSZ050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1601 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
100+0.72 EUR
127+0.57 EUR
Mindestbestellmenge: 51
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SPA11N80C3 SPA11N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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SPP11N80C3 SPP11N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1E5D4C00111BF&compId=SPP11N80C3-dte.pdf?ci_sign=b26c2386ea50a5506f83eacecebe4bf1a2b7bb44 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.76 EUR
35+2.04 EUR
50+1.79 EUR
100+1.67 EUR
Mindestbestellmenge: 26
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SPW11N80C3 SPW11N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FF4C2BAF7A71BF&compId=SPW11N80C3-DTE.pdf?ci_sign=a5731e027b48697bfb5b7b556dd38587c18e85a8 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.9 EUR
20+3.58 EUR
Mindestbestellmenge: 19
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IRF7101TRPBF IRF7101TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F72EDED7238F1A303005056AB0C4F&compId=irf7101pbf.pdf?ci_sign=aaac22e0b6c73d3d5db65aef3b433a69d403b0bc Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7103TRPBF IRF7103TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F730DD100BCF1A303005056AB0C4F&compId=irf7103pbf.pdf?ci_sign=2b12eb75b5f6dce55c65084304d884f8b12d91e4 description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 3802 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
79+0.91 EUR
95+0.76 EUR
118+0.61 EUR
157+0.46 EUR
188+0.38 EUR
214+0.33 EUR
250+0.32 EUR
500+0.3 EUR
Mindestbestellmenge: 63
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IRF7104TRPBF IRF7104TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73473BB245F1A303005056AB0C4F&compId=irf7104pbf.pdf?ci_sign=e5ad76f1ac31c77ea305a7fd6f10a5c85b412e65 description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7105TRPBF IRF7105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73624E9CF8F1A303005056AB0C4F&compId=irf7105pbf.pdf?ci_sign=dd73476fc951e3f65fd1e97ec32dcb771610ef64 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2790 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
142+0.5 EUR
170+0.42 EUR
194+0.37 EUR
220+0.33 EUR
252+0.28 EUR
500+0.26 EUR
1000+0.24 EUR
2000+0.23 EUR
Mindestbestellmenge: 103
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AUIRF7103QTR AUIRF7103QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F732C397812F1A303005056AB0C4F&compId=irf7103qpbf.pdf?ci_sign=6f2d86b4e3f859b06ae14d68aec215fa828791c2 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 2.4W
Gate-source voltage: ±20V
Technology: HEXFET®
Gate charge: 10nC
On-state resistance: 0.2Ω
Produkt ist nicht verfügbar
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IRF9310TRPBF IRF9310TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AF185413D2F1A303005056AB0C4F&compId=irf9310pbf.pdf?ci_sign=e3a7f7b06c7da9c24a173beec3710b94b88c4fe4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 606 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
53+1.37 EUR
74+0.97 EUR
100+0.84 EUR
250+0.7 EUR
500+0.63 EUR
Mindestbestellmenge: 40
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IRFZ34NPBF IRFZ34NPBF INFINEON TECHNOLOGIES irfz34n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
164+0.44 EUR
172+0.42 EUR
250+0.39 EUR
500+0.36 EUR
Mindestbestellmenge: 152
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IRFZ34NSTRLPBF IRFZ34NSTRLPBF INFINEON TECHNOLOGIES irfz34nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP055N03LGXKSA1 IPP055N03LGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC943DE51411C&compId=IPP055N03LG-DTE.pdf?ci_sign=4c046460a84c3cb82bd98e0e42db4e2dee8ace2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3-1
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.75 EUR
Mindestbestellmenge: 26
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BTS721L1 BTS721L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD63E1D1A0DB5EA&compId=BTS721L1.pdf?ci_sign=dc89e9f4aa46a4b01ce52b4c4547a9f1890db8d6 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Mounting: SMD
Number of channels: 4
Case: DSO20
Supply voltage: 5...34V DC
On-state resistance: 25mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Power dissipation: 3.7W
auf Bestellung 61 Stücke:
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10+7.24 EUR
12+6.16 EUR
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IPD060N03LGATMA1 IPD060N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F322FAA4E5C11C&compId=IPD060N03LG-DTE.pdf?ci_sign=7dd05ce845a4f67fba2b0dcdc3fd5e00f47869b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2463 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
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IRFP4568PBF IRFP4568PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C084F1A6F5005056AB5A8F&compId=irfp4568pbf.pdf?ci_sign=cd4a3c3005dfa3acc21d8e71cc6c8608fe85a120 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.22 EUR
25+4.49 EUR
50+3.95 EUR
100+3.36 EUR
Mindestbestellmenge: 14
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KIT_XMC11_BOOT_001 KIT-XMC11-BOOT-001-DTE.pdf
KIT_XMC11_BOOT_001
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED x6; SEGGER J-Link OB Debugger; UART
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
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SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC150N03LDGATMA1 BSC150N03LDG-DTE.pdf
BSC150N03LDGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 BSO150N03MDG-DTE.pdf
BSO150N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BAT62E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0121C5D1FE469&compId=BAT62E6327HTSA1.pdf?ci_sign=ae9af7365eb6533f6d698a4341944e1ebfabda6e
BAT62E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 20mA
Power dissipation: 0.1W
Max. forward voltage: 1V
Max. off-state voltage: 40V
Semiconductor structure: double independent
auf Bestellung 1137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
353+0.2 EUR
394+0.18 EUR
447+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 295
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BAT6804WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64
BAT6804WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 8V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. forward voltage: 0.5V
Max. off-state voltage: 8V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 1785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
175+0.41 EUR
207+0.35 EUR
222+0.32 EUR
Mindestbestellmenge: 143
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IR21271PBF description IR21271SPBF.pdf
IR21271PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
27+2.69 EUR
29+2.47 EUR
30+2.42 EUR
Mindestbestellmenge: 24
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IR21271SPBF IR21271SPBF.pdf
IR21271SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
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IR2127PBF description IR21271SPBF.pdf
IR2127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
30+2.42 EUR
31+2.37 EUR
Mindestbestellmenge: 28
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IR2127SPBF ir2127spbf.pdf
IR2127SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
32+2.29 EUR
95+1.96 EUR
Mindestbestellmenge: 24
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IR2117PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Mounting: THT
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: DIP8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
27+2.7 EUR
30+2.4 EUR
31+2.32 EUR
50+2.2 EUR
Mindestbestellmenge: 23
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IR2117SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Turn-off time: 105ns
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Case: SO8
Voltage class: 600V
Kind of package: tube
Turn-on time: 125ns
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
50+1.44 EUR
53+1.36 EUR
57+1.26 EUR
Mindestbestellmenge: 40
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IR2111PBF description ir2111.pdf
IR2111PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
31+2.36 EUR
34+2.16 EUR
Mindestbestellmenge: 24
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IR2111SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC01A6BF4675EA&compId=IR2111SPBF.pdf?ci_sign=e56e32f57f9de1414cd99b1b3cad0ce56d1a2232
IR2111SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 625mW
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
Mindestbestellmenge: 50
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BC847PNH6327XTSA1 BC846PNH6327.pdf
BC847PNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
auf Bestellung 2015 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
424+0.17 EUR
544+0.13 EUR
1000+0.094 EUR
Mindestbestellmenge: 295
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BSP125H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A70B1D8F42B10B&compId=BSP125H6327XTSA1.pdf?ci_sign=8a5ccf72a5d3019ef8a407058267491d6698e74a
BSP125H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 961 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
114+0.63 EUR
147+0.49 EUR
164+0.44 EUR
200+0.43 EUR
Mindestbestellmenge: 72
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BSD235NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D9351407710B&compId=BSD235NH6327XTSA1.pdf?ci_sign=a8d66b3001a4107b60a345b215d15bbd6fd4e9b1
BSD235NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Case: SOT363
Mounting: SMD
Power dissipation: 0.5W
On-state resistance: 0.35Ω
Drain current: 0.95A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
329+0.22 EUR
400+0.18 EUR
454+0.16 EUR
Mindestbestellmenge: 193
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BSD840NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5EF6CF788910B&compId=BSD840NH6327XTSA1.pdf?ci_sign=5b04d5f43bcba673eb33cf4377e0362af3f23a9e
BSD840NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 0.88A
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 3961 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
305+0.23 EUR
435+0.16 EUR
506+0.14 EUR
618+0.12 EUR
705+0.1 EUR
1000+0.089 EUR
3000+0.083 EUR
Mindestbestellmenge: 228
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BSS214NWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7D848CA9B710B&compId=BSS214NWH6327XTSA1.pdf?ci_sign=5c615cce946f0aa6b4aace9b25942d6eab7b2b3c
BSS214NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1909 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
582+0.12 EUR
879+0.081 EUR
1013+0.071 EUR
1109+0.064 EUR
1200+0.06 EUR
Mindestbestellmenge: 417
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IRL2505STRLPBF irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7201TRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC6FF95B2795EA&compId=IRF7201TRPBF.pdf?ci_sign=1faf568f52c19e8c6dcda73263526dccd2553458
IRF7201TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7205TRPBF description pVersion=0046&contRep=ZT&docId=E21F73B8475059F1A303005056AB0C4F&compId=irf7205pbf.pdf?ci_sign=9c16f80a8aabbea691f6d1023906fcaa71ff4780
IRF7205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1505 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
130+0.55 EUR
142+0.5 EUR
250+0.44 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 114
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IPD50N10S3L16ATMA1 Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Technology: OptiMOS® -T
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Pulsed drain current: 200A
Case: PG-TO252-3-11
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 38A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IGW40N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3717611A24FA8&compId=IGW40N120H3-DTE.pdf?ci_sign=6b7e50c22310b6e9d6b61594307c9e8b688024d8
IGW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Gate-emitter voltage: ±20V
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.56 EUR
12+6.11 EUR
30+5 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.72 EUR
23+3.19 EUR
29+2.49 EUR
32+2.3 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKQ40N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFF7BE8F13C749&compId=IKQ40N120CH3.pdf?ci_sign=c8ed0c89fcc600022b2a871e0b32fde7f3676f73
IKQ40N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Produkt ist nicht verfügbar
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IKQ40N120CT2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD6AC8EDA0749&compId=IKQ40N120CT2.pdf?ci_sign=8253bd2051f94bd3337d2fb92cd05a3b6edcd14b
IKQ40N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS6XKSA1 IKW40N120CS6.pdf
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.68 EUR
13+5.88 EUR
14+5.23 EUR
30+4.29 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3FKSA1 IKW40N120H3-DTE.pdf
IKW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Produkt ist nicht verfügbar
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IKW40N120T2FKSA1 IKW40N120T2.pdf
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 165A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.35 EUR
10+7.38 EUR
11+6.65 EUR
Mindestbestellmenge: 9
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IKY40N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF3053B408E7820&compId=IKY40N120CH3.pdf?ci_sign=6f1d0b3f6ef77831abed12e2ffc7daa6f0f4c068
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKY40N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF30BD6FCDAB820&compId=IKY40N120CS6.pdf?ci_sign=341ed47cf8e6482e67d81b7d878f560b2cace0b7
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD090N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F33308FC6DE11C&compId=IPD090N03LG-DTE.pdf?ci_sign=9a4be819311a50a24b55811cccea1abba829cef9
IPD090N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
129+0.55 EUR
136+0.53 EUR
155+0.46 EUR
159+0.45 EUR
Mindestbestellmenge: 120
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IRL2203NSTRLPBF pVersion=0046&contRep=ZT&docId=E22272FD5B2EC9F1A303005056AB0C4F&compId=irl2203nspbf.pdf?ci_sign=338ad334b3f34a2957cf0ae5f23cffd55bfac9a8
IRL2203NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT422PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e
PVT422PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.25VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.25V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT422SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e
PVT422SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.3 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IGB20N65S5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6C96BEB6D820&compId=IGB20N65S5.pdf?ci_sign=a4d8b063edbd433beb9ed958c8c2ba441c0328b3
IGB20N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 48nC
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-off time: 137ns
Turn-on time: 27ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC6BCE91BE1820&compId=IHW20N65R5.pdf?ci_sign=b44b2ed99f625095237ebaf7c9ffdee8198ae140
IHW20N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 97nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-off time: 257ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c
IKB20N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 48nC
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-off time: 183ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.78 EUR
27+2.66 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SPD50N03S207GBTMA1 SPD50N03S207G-DTE.pdf
SPD50N03S207GBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
106+0.67 EUR
112+0.64 EUR
116+0.62 EUR
500+0.6 EUR
Mindestbestellmenge: 103
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BSC050N03LSGATMA1 BSC050N03LSG-DTE.pdf
BSC050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC050N03MSGATMA1 BSC050N03MSG-DTE.pdf
BSC050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03LSGATMA1 BSZ050N03LSG-DTE.pdf
BSZ050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03MSGATMA1 BSZ050N03MSG-DTE.pdf
BSZ050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1601 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
100+0.72 EUR
127+0.57 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
SPA11N80C3 description
SPA11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1E5D4C00111BF&compId=SPP11N80C3-dte.pdf?ci_sign=b26c2386ea50a5506f83eacecebe4bf1a2b7bb44
SPP11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
35+2.04 EUR
50+1.79 EUR
100+1.67 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
SPW11N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FF4C2BAF7A71BF&compId=SPW11N80C3-DTE.pdf?ci_sign=a5731e027b48697bfb5b7b556dd38587c18e85a8
SPW11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.9 EUR
20+3.58 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IRF7101TRPBF pVersion=0046&contRep=ZT&docId=E21F72EDED7238F1A303005056AB0C4F&compId=irf7101pbf.pdf?ci_sign=aaac22e0b6c73d3d5db65aef3b433a69d403b0bc
IRF7101TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7103TRPBF description pVersion=0046&contRep=ZT&docId=E21F730DD100BCF1A303005056AB0C4F&compId=irf7103pbf.pdf?ci_sign=2b12eb75b5f6dce55c65084304d884f8b12d91e4
IRF7103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 3802 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
79+0.91 EUR
95+0.76 EUR
118+0.61 EUR
157+0.46 EUR
188+0.38 EUR
214+0.33 EUR
250+0.32 EUR
500+0.3 EUR
Mindestbestellmenge: 63
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IRF7104TRPBF description pVersion=0046&contRep=ZT&docId=E21F73473BB245F1A303005056AB0C4F&compId=irf7104pbf.pdf?ci_sign=e5ad76f1ac31c77ea305a7fd6f10a5c85b412e65
IRF7104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7105TRPBF description pVersion=0046&contRep=ZT&docId=E21F73624E9CF8F1A303005056AB0C4F&compId=irf7105pbf.pdf?ci_sign=dd73476fc951e3f65fd1e97ec32dcb771610ef64
IRF7105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
142+0.5 EUR
170+0.42 EUR
194+0.37 EUR
220+0.33 EUR
252+0.28 EUR
500+0.26 EUR
1000+0.24 EUR
2000+0.23 EUR
Mindestbestellmenge: 103
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AUIRF7103QTR pVersion=0046&contRep=ZT&docId=E21F732C397812F1A303005056AB0C4F&compId=irf7103qpbf.pdf?ci_sign=6f2d86b4e3f859b06ae14d68aec215fa828791c2
AUIRF7103QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 2.4W
Gate-source voltage: ±20V
Technology: HEXFET®
Gate charge: 10nC
On-state resistance: 0.2Ω
Produkt ist nicht verfügbar
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IRF9310TRPBF pVersion=0046&contRep=ZT&docId=E221AF185413D2F1A303005056AB0C4F&compId=irf9310pbf.pdf?ci_sign=e3a7f7b06c7da9c24a173beec3710b94b88c4fe4
IRF9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 606 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
53+1.37 EUR
74+0.97 EUR
100+0.84 EUR
250+0.7 EUR
500+0.63 EUR
Mindestbestellmenge: 40
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IRFZ34NPBF irfz34n.pdf
IRFZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
164+0.44 EUR
172+0.42 EUR
250+0.39 EUR
500+0.36 EUR
Mindestbestellmenge: 152
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IRFZ34NSTRLPBF irfz34nspbf.pdf
IRFZ34NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP055N03LGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC943DE51411C&compId=IPP055N03LG-DTE.pdf?ci_sign=4c046460a84c3cb82bd98e0e42db4e2dee8ace2f
IPP055N03LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3-1
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.75 EUR
Mindestbestellmenge: 26
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BTS721L1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD63E1D1A0DB5EA&compId=BTS721L1.pdf?ci_sign=dc89e9f4aa46a4b01ce52b4c4547a9f1890db8d6
BTS721L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Mounting: SMD
Number of channels: 4
Case: DSO20
Supply voltage: 5...34V DC
On-state resistance: 25mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Power dissipation: 3.7W
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.24 EUR
12+6.16 EUR
Mindestbestellmenge: 10
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IPD060N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F322FAA4E5C11C&compId=IPD060N03LG-DTE.pdf?ci_sign=7dd05ce845a4f67fba2b0dcdc3fd5e00f47869b8
IPD060N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
Mindestbestellmenge: 132
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IRFP4568PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C084F1A6F5005056AB5A8F&compId=irfp4568pbf.pdf?ci_sign=cd4a3c3005dfa3acc21d8e71cc6c8608fe85a120
IRFP4568PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.22 EUR
25+4.49 EUR
50+3.95 EUR
100+3.36 EUR
Mindestbestellmenge: 14
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