Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149672) > Seite 2456 nach 2495

Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2451 2452 2453 2454 2455 2456 2457 2458 2459 2460 2461 2490 2495  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRFZ34NPBF IRFZ34NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055B0F1A6F5005056AB5A8F&compId=irfz34n.pdf?ci_sign=686bda4beadb73c469501e8a6160e62db2558a32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
79+0.91 EUR
159+0.45 EUR
168+0.43 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ34NSTRLPBF IRFZ34NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221CA5807D86BF1A303005056AB0C4F&compId=irfz34nspbf.pdf?ci_sign=2fff9063d2b86069a4b91f953d0d75984c82566e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP055N03LGXKSA1 IPP055N03LGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC943DE51411C&compId=IPP055N03LG-DTE.pdf?ci_sign=4c046460a84c3cb82bd98e0e42db4e2dee8ace2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
67+1.07 EUR
102+0.71 EUR
108+0.67 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
BTS721L1 BTS721L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD63E1D1A0DB5EA&compId=BTS721L1.pdf?ci_sign=dc89e9f4aa46a4b01ce52b4c4547a9f1890db8d6 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
On-state resistance: 25mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Power dissipation: 3.7W
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.31 EUR
12+6.02 EUR
250+5.93 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPD060N03LGATMA1 IPD060N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F322FAA4E5C11C&compId=IPD060N03LG-DTE.pdf?ci_sign=7dd05ce845a4f67fba2b0dcdc3fd5e00f47869b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.10 EUR
96+0.75 EUR
121+0.59 EUR
128+0.56 EUR
500+0.54 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4568PBF IRFP4568PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C084F1A6F5005056AB5A8F&compId=irfp4568pbf.pdf?ci_sign=cd4a3c3005dfa3acc21d8e71cc6c8608fe85a120 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 5.9mΩ
Power dissipation: 517W
Gate charge: 151nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAN60R360PFD7SXKSA1 IPAN60R360PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NTRPBF IRFL024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BD84F5CA48F1A303005056AB0C4F&compId=irfl024npbf.pdf?ci_sign=82149718abf7d65abc0cc3f966ed8e67d81b09e0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP40N65F5XKSA1 IGP40N65F5XKSA1 INFINEON TECHNOLOGIES IGP40N65F5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.95 EUR
21+3.49 EUR
24+3.03 EUR
25+2.86 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IGP40N65H5XKSA1 IGP40N65H5XKSA1 INFINEON TECHNOLOGIES DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.43 EUR
22+3.25 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N65F5FKSA1 IGW40N65F5FKSA1 INFINEON TECHNOLOGIES IGP40N65F5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.88 EUR
22+3.29 EUR
24+3.10 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N65H5FKSA1 IGW40N65H5FKSA1 INFINEON TECHNOLOGIES IGW40N65H5FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 120A
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.19 EUR
21+3.55 EUR
22+3.35 EUR
30+3.22 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R5XKSA1 IHW40N65R5XKSA1 INFINEON TECHNOLOGIES IHW40N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R6XKSA1 IHW40N65R6XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.76 EUR
26+2.82 EUR
27+2.66 EUR
30+2.59 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EF5ATMA1 IKB40N65EF5ATMA1 INFINEON TECHNOLOGIES IKB40N65EF5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EH5ATMA1 IKB40N65EH5ATMA1 INFINEON TECHNOLOGIES IKB40N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65ES5ATMA1 IKB40N65ES5ATMA1 INFINEON TECHNOLOGIES IKB40N65ES5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65F5XKSA1 IKP40N65F5XKSA1 INFINEON TECHNOLOGIES IKP40N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65H5XKSA1 IKP40N65H5XKSA1 INFINEON TECHNOLOGIES IKP40N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 120A
Gate charge: 95nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65ES5XKSA1 IKW40N65ES5XKSA1 INFINEON TECHNOLOGIES IKW40N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65F5FKSA1 IKW40N65F5FKSA1 INFINEON TECHNOLOGIES IKW40N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.15 EUR
20+3.68 EUR
21+3.47 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65H5FKSA1 IKW40N65H5FKSA1 INFINEON TECHNOLOGIES IKW40N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.22 EUR
23+3.25 EUR
24+3.07 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65WR5XKSA1 IKW40N65WR5XKSA1 INFINEON TECHNOLOGIES IKW40N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.05 EUR
20+3.65 EUR
26+2.79 EUR
28+2.65 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BSP613PH6327XTSA1 BSP613PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921C2619F071CC&compId=BSP613PH6327XTSA1-dte.pdf?ci_sign=723408d9febe3aa5b901341db3481f207e9054ff Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 1188 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
72+1.00 EUR
87+0.83 EUR
91+0.79 EUR
92+0.78 EUR
100+0.75 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
SN7002WH6327XTSA1 SN7002WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A85484C47E310B&compId=SN7002WH6327XTSA1.pdf?ci_sign=99f37472360a87eec8acb72bf5b0b8d7370dfbd3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT323
auf Bestellung 2277 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
376+0.19 EUR
548+0.13 EUR
642+0.11 EUR
1049+0.07 EUR
1109+0.06 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
IR2125PBF IR2125PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD343CF1A6F5005056AB5A8F&compId=ir2125.pdf?ci_sign=fc623d6f605dc7bc7e85d06d16abb2dbd919b7f4 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.52 EUR
27+2.69 EUR
29+2.53 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR2125SPBF IR2125SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD87EC7AFA215EA&compId=IR2125SPBF.pdf?ci_sign=b60eafeb4583121eca344b2f0d5705418b1dc179 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.12 EUR
19+3.80 EUR
20+3.66 EUR
45+3.52 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BAS21E6327HTSA1 BAS21E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0 Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
auf Bestellung 2881 Stücke:
Lieferzeit 14-21 Tag (e)
309+0.23 EUR
477+0.15 EUR
599+0.12 EUR
695+0.10 EUR
810+0.09 EUR
1337+0.05 EUR
1413+0.05 EUR
Mindestbestellmenge: 309
Im Einkaufswagen  Stück im Wert von  UAH
IPT015N10N5ATMA1 IPT015N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAD7554B3411C&compId=IPT015N10N5-DTE.pdf?ci_sign=81070ebcf3bdd89d929519f2630c51174d0da1da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4310ZPBF IRFP4310ZPBF INFINEON TECHNOLOGIES irfp4310zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Power dissipation: 280W
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.12µC
On-state resistance: 6mΩ
Gate-source voltage: ±20V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.23 EUR
25+2.86 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
AUIRG4PH50S AUIRG4PH50S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB96F76D7618FA40C7&compId=auirg4ph50s.pdf?ci_sign=06bd4ffeec9e52c7556a5dcb27d76d7567cc3019 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA045N10N3GXKSA1 IPA045N10N3GXKSA1 INFINEON TECHNOLOGIES IPA045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI045N10N3GXKSA1 IPI045N10N3GXKSA1 INFINEON TECHNOLOGIES IPI045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP045N10N3GXKSA1 IPP045N10N3GXKSA1 INFINEON TECHNOLOGIES IPP045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.05 EUR
27+2.72 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF7319TRPBF IRF7319TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219E4670C7E3F1A303005056AB0C4F&compId=irf7319pbf.pdf?ci_sign=930d6cef5388477ac5f751b53c8900a39bc7c132 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD031N06L3GATMA1 IPD031N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAAC938B42011C&compId=IPD031N06L3G-DTE.pdf?ci_sign=956ec9d4fd9e72f0920c828b3865ef21092a25df Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 989 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
38+1.90 EUR
40+1.80 EUR
500+1.73 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRS20957STRPBF IRS20957STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE991C5A14E315F78BF&compId=IRS20957S.pdf?ci_sign=22bf15a378893f041d4941ea0b4aa473f9108955 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Supply voltage: 10...15V DC
Case: SO16
Mounting: SMD
Kind of package: reel; tape
Amplifier class: D
Number of channels: 1
auf Bestellung 1583 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.10 EUR
27+2.75 EUR
28+2.60 EUR
100+2.57 EUR
250+2.50 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRF2907ZPBF IRF2907ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5FD2406001F1A303005056AB0C4F&compId=irf2907zpbf.pdf?ci_sign=d9930ff1f83e629ad9856e6d356b20e0d58e4614 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRFS3207TRLPBF IRFS3207TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 180A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4010TRLPBF IRFS4010TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BD2687D720A745&compId=IRFS4010TRLPBF.pdf?ci_sign=496ea67e3c29131ec26750b00389f7c763cf8c45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP110N20N3GXKSA1 IPP110N20N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC867EB270211C&compId=IPP110N20N3G-DTE.pdf?ci_sign=431a306c7efcf431ff4c7879912e470f4ddd5a21 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.35 EUR
11+6.52 EUR
12+6.18 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BCR162E6327 BCR162E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58689C0D2E469&compId=BCR162.pdf?ci_sign=6c9bbf739143f7a57c3e9cac63723791f738730e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Mounting: SMD
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BCR166E6327 BCR166E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5836521750469&compId=BCR166.pdf?ci_sign=3fa9723f756af0d24d4a7bd47786e2a7dde80b4b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Case: SOT23
Frequency: 160MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
auf Bestellung 1377 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
264+0.27 EUR
342+0.21 EUR
439+0.16 EUR
599+0.12 EUR
1377+0.05 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IPP032N06N3GXKSA1 IPP032N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98A6C6030411C&compId=IPP032N06N3G-DTE.pdf?ci_sign=34183e67dc90345bcb6807fa4748e12435f87288 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.10 EUR
33+2.23 EUR
67+1.07 EUR
71+1.02 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4227PBF IRFP4227PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB1AF1A6F5005056AB5A8F&compId=irfp4227pbf.pdf?ci_sign=865a681e1ae387ed345fa57ca87cba44063b82e6 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3710PBF IRFP3710PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB05F1A6F5005056AB5A8F&compId=irfp3710.pdf?ci_sign=0d505afbb98c91b5b4639168accbe9a1a6198538 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.90 EUR
29+2.55 EUR
30+2.40 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
DZ1070N18K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU120NPBF IRFU120NPBF INFINEON TECHNOLOGIES irfr120n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
104+0.69 EUR
122+0.59 EUR
129+0.56 EUR
525+0.54 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRF7316TRPBF IRF7316TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219E0768620AF1A303005056AB0C4F&compId=irf7316pbf.pdf?ci_sign=f3ac06c6dfbd1b2e65f97e10a01cbbc54ab17c25 description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 6149 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
69+1.05 EUR
152+0.47 EUR
161+0.45 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7316QTR AUIRF7316QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D742CF1A6F5005056AB5A8F&compId=auirf7316q.pdf?ci_sign=af9bd21a38321e4c969ec22e73714e95cc759dd5 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
On-state resistance: 98mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PH20KDPBF IRG4PH20KDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D5D15F7C3FF1A303005056AB0C4F&compId=irg4ph20kdpbf.pdf?ci_sign=73cf103f6ec1f50e5465b4ed37507bf31c4bf8af Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PH20KPBF IRG4PH20KPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D5FD1DFF0CF1A303005056AB0C4F&compId=irg4ph20kpbf.pdf?ci_sign=515381e4ecec53aef55eff32a285367c089bb78d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS31N20DTRLP IRFS31N20DTRLP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B2D2486825F1A303005056AB0C4F&compId=irfb31n20dpbf.pdf?ci_sign=ed3075155006186cadb71ae9521f3327718e6583 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8726TRPBF IRLR8726TRPBF INFINEON TECHNOLOGIES irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
auf Bestellung 2226 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
132+0.54 EUR
160+0.45 EUR
242+0.30 EUR
256+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8743TRPBF IRLR8743TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2228120F8A1E7F1A303005056AB0C4F&compId=irlr8743pbf.pdf?ci_sign=13caac950d62003a7670c9a3bc787dc6b4dae60e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+1.04 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ24NPBF IRFZ24NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055A2F1A6F5005056AB5A8F&compId=irfz24n.pdf?ci_sign=035e258bd6fdc5de7520892f865a0f577cbf21f3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.80 EUR
179+0.40 EUR
215+0.33 EUR
228+0.31 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
ICE2QR2280ZXKLA1
+1
 		ICE2QR2280ZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9CA1DEB7370760C7&compId=ICE2QR2280Z.pdf?ci_sign=0afed20d41bae5cd14e264b6ccdd85b7a6c8c567 Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP7; 10.5÷25VDC; SMPS; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 800V
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2110PBF IR2110PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: tube
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP14
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.6W
Type of integrated circuit: driver
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.15 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IR2110SPBF IR2110SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: tube
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO16-W
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.25W
Type of integrated circuit: driver
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.75 EUR
34+2.12 EUR
36+2.00 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ34NPBF pVersion=0046&contRep=ZT&docId=E1C04E7D5055B0F1A6F5005056AB5A8F&compId=irfz34n.pdf?ci_sign=686bda4beadb73c469501e8a6160e62db2558a32
IRFZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
79+0.91 EUR
159+0.45 EUR
168+0.43 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ34NSTRLPBF pVersion=0046&contRep=ZT&docId=E221CA5807D86BF1A303005056AB0C4F&compId=irfz34nspbf.pdf?ci_sign=2fff9063d2b86069a4b91f953d0d75984c82566e
IRFZ34NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP055N03LGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC943DE51411C&compId=IPP055N03LG-DTE.pdf?ci_sign=4c046460a84c3cb82bd98e0e42db4e2dee8ace2f
IPP055N03LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
67+1.07 EUR
102+0.71 EUR
108+0.67 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
BTS721L1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD63E1D1A0DB5EA&compId=BTS721L1.pdf?ci_sign=dc89e9f4aa46a4b01ce52b4c4547a9f1890db8d6
BTS721L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
On-state resistance: 25mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Power dissipation: 3.7W
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.31 EUR
12+6.02 EUR
250+5.93 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPD060N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F322FAA4E5C11C&compId=IPD060N03LG-DTE.pdf?ci_sign=7dd05ce845a4f67fba2b0dcdc3fd5e00f47869b8
IPD060N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.10 EUR
96+0.75 EUR
121+0.59 EUR
128+0.56 EUR
500+0.54 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4568PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C084F1A6F5005056AB5A8F&compId=irfp4568pbf.pdf?ci_sign=cd4a3c3005dfa3acc21d8e71cc6c8608fe85a120
IRFP4568PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 5.9mΩ
Power dissipation: 517W
Gate charge: 151nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAN60R360PFD7SXKSA1 Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741
IPAN60R360PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024NTRPBF pVersion=0046&contRep=ZT&docId=E221BD84F5CA48F1A303005056AB0C4F&compId=irfl024npbf.pdf?ci_sign=82149718abf7d65abc0cc3f966ed8e67d81b09e0
IRFL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP40N65F5XKSA1 IGP40N65F5XKSA1-DTE.pdf
IGP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.95 EUR
21+3.49 EUR
24+3.03 EUR
25+2.86 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IGP40N65H5XKSA1 DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6
IGP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
22+3.25 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N65F5FKSA1 IGP40N65F5XKSA1-DTE.pdf
IGW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.88 EUR
22+3.29 EUR
24+3.10 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N65H5FKSA1 IGW40N65H5FKSA1.pdf
IGW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 120A
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.19 EUR
21+3.55 EUR
22+3.35 EUR
30+3.22 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R5XKSA1 IHW40N65R5.pdf
IHW40N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R6XKSA1 Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275
IHW40N65R6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.76 EUR
26+2.82 EUR
27+2.66 EUR
30+2.59 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EF5ATMA1 IKB40N65EF5.pdf
IKB40N65EF5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EH5ATMA1 IKB40N65EH5.pdf
IKB40N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65ES5ATMA1 IKB40N65ES5.pdf
IKB40N65ES5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65F5XKSA1 IKP40N65F5-DTE.pdf
IKP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65H5XKSA1 IKP40N65H5-DTE.pdf
IKP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 120A
Gate charge: 95nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65ES5XKSA1 IKW40N65ES5.pdf
IKW40N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65F5FKSA1 IKW40N65F5-DTE.pdf
IKW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
20+3.68 EUR
21+3.47 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65H5FKSA1 IKW40N65H5-DTE.pdf
IKW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.22 EUR
23+3.25 EUR
24+3.07 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65WR5XKSA1 IKW40N65WR5.pdf
IKW40N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.05 EUR
20+3.65 EUR
26+2.79 EUR
28+2.65 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BSP613PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921C2619F071CC&compId=BSP613PH6327XTSA1-dte.pdf?ci_sign=723408d9febe3aa5b901341db3481f207e9054ff
BSP613PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 1188 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
72+1.00 EUR
87+0.83 EUR
91+0.79 EUR
92+0.78 EUR
100+0.75 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
SN7002WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A85484C47E310B&compId=SN7002WH6327XTSA1.pdf?ci_sign=99f37472360a87eec8acb72bf5b0b8d7370dfbd3
SN7002WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT323
auf Bestellung 2277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
376+0.19 EUR
548+0.13 EUR
642+0.11 EUR
1049+0.07 EUR
1109+0.06 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
IR2125PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD343CF1A6F5005056AB5A8F&compId=ir2125.pdf?ci_sign=fc623d6f605dc7bc7e85d06d16abb2dbd919b7f4
IR2125PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
27+2.69 EUR
29+2.53 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IR2125SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD87EC7AFA215EA&compId=IR2125SPBF.pdf?ci_sign=b60eafeb4583121eca344b2f0d5705418b1dc179
IR2125SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.12 EUR
19+3.80 EUR
20+3.66 EUR
45+3.52 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BAS21E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB7F2039728A469&compId=BAS2103WE6327HTSA1.pdf?ci_sign=c9c0fe8d828947d7f45944e66d5a14dbf6d975f0
BAS21E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; SOT23; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
auf Bestellung 2881 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
309+0.23 EUR
477+0.15 EUR
599+0.12 EUR
695+0.10 EUR
810+0.09 EUR
1337+0.05 EUR
1413+0.05 EUR
Mindestbestellmenge: 309
Im Einkaufswagen  Stück im Wert von  UAH
IPT015N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAD7554B3411C&compId=IPT015N10N5-DTE.pdf?ci_sign=81070ebcf3bdd89d929519f2630c51174d0da1da
IPT015N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4310ZPBF irfp4310zpbf.pdf
IRFP4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Power dissipation: 280W
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.12µC
On-state resistance: 6mΩ
Gate-source voltage: ±20V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
25+2.86 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
AUIRG4PH50S pVersion=0046&contRep=ZT&docId=005056AB90B41EDB96F76D7618FA40C7&compId=auirg4ph50s.pdf?ci_sign=06bd4ffeec9e52c7556a5dcb27d76d7567cc3019
AUIRG4PH50S
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA045N10N3GXKSA1 IPA045N10N3G-DTE.pdf
IPA045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI045N10N3GXKSA1 IPI045N10N3G-DTE.pdf
IPI045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP045N10N3GXKSA1 IPP045N10N3G-DTE.pdf
IPP045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.05 EUR
27+2.72 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF7319TRPBF description pVersion=0046&contRep=ZT&docId=E2219E4670C7E3F1A303005056AB0C4F&compId=irf7319pbf.pdf?ci_sign=930d6cef5388477ac5f751b53c8900a39bc7c132
IRF7319TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD031N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAAC938B42011C&compId=IPD031N06L3G-DTE.pdf?ci_sign=956ec9d4fd9e72f0920c828b3865ef21092a25df
IPD031N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 989 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
38+1.90 EUR
40+1.80 EUR
500+1.73 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRS20957STRPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE991C5A14E315F78BF&compId=IRS20957S.pdf?ci_sign=22bf15a378893f041d4941ea0b4aa473f9108955
IRS20957STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Supply voltage: 10...15V DC
Case: SO16
Mounting: SMD
Kind of package: reel; tape
Amplifier class: D
Number of channels: 1
auf Bestellung 1583 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.10 EUR
27+2.75 EUR
28+2.60 EUR
100+2.57 EUR
250+2.50 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRF2907ZPBF pVersion=0046&contRep=ZT&docId=E21F5FD2406001F1A303005056AB0C4F&compId=irf2907zpbf.pdf?ci_sign=d9930ff1f83e629ad9856e6d356b20e0d58e4614
IRF2907ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRFS3207TRLPBF pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b
IRFS3207TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 180A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4010TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BD2687D720A745&compId=IRFS4010TRLPBF.pdf?ci_sign=496ea67e3c29131ec26750b00389f7c763cf8c45
IRFS4010TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP110N20N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC867EB270211C&compId=IPP110N20N3G-DTE.pdf?ci_sign=431a306c7efcf431ff4c7879912e470f4ddd5a21
IPP110N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.35 EUR
11+6.52 EUR
12+6.18 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BCR162E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58689C0D2E469&compId=BCR162.pdf?ci_sign=6c9bbf739143f7a57c3e9cac63723791f738730e
BCR162E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Mounting: SMD
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BCR166E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5836521750469&compId=BCR166.pdf?ci_sign=3fa9723f756af0d24d4a7bd47786e2a7dde80b4b
BCR166E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Case: SOT23
Frequency: 160MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
auf Bestellung 1377 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
264+0.27 EUR
342+0.21 EUR
439+0.16 EUR
599+0.12 EUR
1377+0.05 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
IPP032N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98A6C6030411C&compId=IPP032N06N3G-DTE.pdf?ci_sign=34183e67dc90345bcb6807fa4748e12435f87288
IPP032N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.10 EUR
33+2.23 EUR
67+1.07 EUR
71+1.02 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4227PBF description pVersion=0046&contRep=ZT&docId=E1C04E653ACB1AF1A6F5005056AB5A8F&compId=irfp4227pbf.pdf?ci_sign=865a681e1ae387ed345fa57ca87cba44063b82e6
IRFP4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3710PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB05F1A6F5005056AB5A8F&compId=irfp3710.pdf?ci_sign=0d505afbb98c91b5b4639168accbe9a1a6198538
IRFP3710PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.90 EUR
29+2.55 EUR
30+2.40 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
DZ1070N18K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.75V
Load current: 1.07kA
Semiconductor structure: single diode
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU120NPBF irfr120n.pdf
IRFU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
104+0.69 EUR
122+0.59 EUR
129+0.56 EUR
525+0.54 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRF7316TRPBF description pVersion=0046&contRep=ZT&docId=E2219E0768620AF1A303005056AB0C4F&compId=irf7316pbf.pdf?ci_sign=f3ac06c6dfbd1b2e65f97e10a01cbbc54ab17c25
IRF7316TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 6149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
69+1.05 EUR
152+0.47 EUR
161+0.45 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7316QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D742CF1A6F5005056AB5A8F&compId=auirf7316q.pdf?ci_sign=af9bd21a38321e4c969ec22e73714e95cc759dd5
AUIRF7316QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
On-state resistance: 98mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PH20KDPBF pVersion=0046&contRep=ZT&docId=E221D5D15F7C3FF1A303005056AB0C4F&compId=irg4ph20kdpbf.pdf?ci_sign=73cf103f6ec1f50e5465b4ed37507bf31c4bf8af
IRG4PH20KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PH20KPBF pVersion=0046&contRep=ZT&docId=E221D5FD1DFF0CF1A303005056AB0C4F&compId=irg4ph20kpbf.pdf?ci_sign=515381e4ecec53aef55eff32a285367c089bb78d
IRG4PH20KPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS31N20DTRLP pVersion=0046&contRep=ZT&docId=E221B2D2486825F1A303005056AB0C4F&compId=irfb31n20dpbf.pdf?ci_sign=ed3075155006186cadb71ae9521f3327718e6583
IRFS31N20DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
auf Bestellung 2226 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
132+0.54 EUR
160+0.45 EUR
242+0.30 EUR
256+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8743TRPBF pVersion=0046&contRep=ZT&docId=E2228120F8A1E7F1A303005056AB0C4F&compId=irlr8743pbf.pdf?ci_sign=13caac950d62003a7670c9a3bc787dc6b4dae60e
IRLR8743TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+1.04 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ24NPBF description pVersion=0046&contRep=ZT&docId=E1C04E7D5055A2F1A6F5005056AB5A8F&compId=irfz24n.pdf?ci_sign=035e258bd6fdc5de7520892f865a0f577cbf21f3
IRFZ24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.80 EUR
179+0.40 EUR
215+0.33 EUR
228+0.31 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
ICE2QR2280ZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9CA1DEB7370760C7&compId=ICE2QR2280Z.pdf?ci_sign=0afed20d41bae5cd14e264b6ccdd85b7a6c8c567
ICE2QR2280ZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: A/D converters - integrated circuits
Description: IC: PMIC; PWM controller; Ch: 1; DIP7; 10.5÷25VDC; SMPS; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 800V
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2110PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee
IR2110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: tube
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP14
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.6W
Type of integrated circuit: driver
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
30+2.42 EUR
32+2.29 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IR2110SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD33EFF1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=c9154912c319d9857d6c998c98ec5f1a92c658ee
IR2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Kind of package: tube
Turn-off time: 111ns
Turn-on time: 145ns
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO16-W
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 500V
Power: 1.25W
Type of integrated circuit: driver
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
34+2.12 EUR
36+2.00 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2451 2452 2453 2454 2455 2456 2457 2458 2459 2460 2461 2490 2495  [ Nächste Seite >> ]