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IR2127SPBF IR2127SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3443F1A6F5005056AB5A8F&compId=ir2127spbf.pdf?ci_sign=203f11987e306e198516b74fa296a60c82b6b5ef Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
24+3 EUR
32+2.29 EUR
95+1.96 EUR
Mindestbestellmenge: 24
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IGT60R190D1SATMA1 IGT60R190D1SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE4549364958BF&compId=IGT60R190D1SATMA1.pdf?ci_sign=500d5346868d9d0d739574ae6a7257e739be002c Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 23A
Power dissipation: 55.5W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 3.2nC
Gate current: 7.7mA
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IR2117PBF IR2117PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
27+2.7 EUR
30+2.4 EUR
31+2.32 EUR
50+2.2 EUR
Mindestbestellmenge: 23
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IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
50+1.44 EUR
53+1.36 EUR
57+1.26 EUR
Mindestbestellmenge: 40
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IR2111PBF IR2111PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33FDF1A6F5005056AB5A8F&compId=ir2111.pdf?ci_sign=cfae4f602fb7282d14336c0c0f16766cd0eadcb6 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 1W
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.05 EUR
31+2.33 EUR
34+2.16 EUR
Mindestbestellmenge: 24
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IR2111SPBF IR2111SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC01A6BF4675EA&compId=IR2111SPBF.pdf?ci_sign=e56e32f57f9de1414cd99b1b3cad0ce56d1a2232 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 625mW
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
Mindestbestellmenge: 25
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BC847PNH6327XTSA1 BC847PNH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6A4E750E1A469&compId=BC846PNH6327.pdf?ci_sign=b3d707a0c8687f7783b02bc7f504750648a3ba4c Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2015 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
424+0.17 EUR
544+0.13 EUR
1000+0.094 EUR
Mindestbestellmenge: 295
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BSP125H6327XTSA1 BSP125H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A70B1D8F42B10B&compId=BSP125H6327XTSA1.pdf?ci_sign=8a5ccf72a5d3019ef8a407058267491d6698e74a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 961 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
106+0.68 EUR
153+0.47 EUR
162+0.44 EUR
200+0.43 EUR
Mindestbestellmenge: 67
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BSD235NH6327XTSA1 BSD235NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D9351407710B&compId=BSD235NH6327XTSA1.pdf?ci_sign=a8d66b3001a4107b60a345b215d15bbd6fd4e9b1 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Drain current: 0.95A
Technology: OptiMOS™ 2
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
305+0.23 EUR
371+0.19 EUR
454+0.16 EUR
Mindestbestellmenge: 179
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BSD840NH6327XTSA1 BSD840NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5EF6CF788910B&compId=BSD840NH6327XTSA1.pdf?ci_sign=5b04d5f43bcba673eb33cf4377e0362af3f23a9e Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 0.88A
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 3961 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
283+0.25 EUR
404+0.18 EUR
472+0.15 EUR
794+0.09 EUR
834+0.086 EUR
3000+0.083 EUR
Mindestbestellmenge: 209
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BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7D848CA9B710B&compId=BSS214NWH6327XTSA1.pdf?ci_sign=5c615cce946f0aa6b4aace9b25942d6eab7b2b3c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2364 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
538+0.13 EUR
814+0.088 EUR
937+0.076 EUR
1382+0.052 EUR
1462+0.049 EUR
Mindestbestellmenge: 385
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IRL2505PBF IRL2505PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227317C98B92F1A303005056AB0C4F&compId=irl2505pbf.pdf?ci_sign=f6bfba5649d0dd9c0ee6df3f8e5c34860d2b83d7 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRL2505STRLPBF INFINEON TECHNOLOGIES irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7201TRPBF IRF7201TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC6FF95B2795EA&compId=IRF7201TRPBF.pdf?ci_sign=1faf568f52c19e8c6dcda73263526dccd2553458 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7205TRPBF IRF7205TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73B8475059F1A303005056AB0C4F&compId=irf7205pbf.pdf?ci_sign=9c16f80a8aabbea691f6d1023906fcaa71ff4780 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 2506 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
208+0.34 EUR
221+0.32 EUR
Mindestbestellmenge: 107
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IPD50N10S3L16ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Technology: OptiMOS® -T
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 38A
Drain-source voltage: 100V
On-state resistance: 15mΩ
Kind of channel: enhancement
Case: PG-TO252-3-11
Gate-source voltage: ±20V
Power dissipation: 100W
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3717611A24FA8&compId=IGW40N120H3-DTE.pdf?ci_sign=6b7e50c22310b6e9d6b61594307c9e8b688024d8 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Gate-emitter voltage: ±20V
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.56 EUR
12+6.11 EUR
30+5 EUR
Mindestbestellmenge: 10
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.23 EUR
16+4.49 EUR
21+3.5 EUR
23+3.22 EUR
Mindestbestellmenge: 14
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IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFF7BE8F13C749&compId=IKQ40N120CH3.pdf?ci_sign=c8ed0c89fcc600022b2a871e0b32fde7f3676f73 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Produkt ist nicht verfügbar
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD6AC8EDA0749&compId=IKQ40N120CT2.pdf?ci_sign=8253bd2051f94bd3337d2fb92cd05a3b6edcd14b Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Produkt ist nicht verfügbar
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IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0A66D3DFBB8BF&compId=IKW40N120CS6.pdf?ci_sign=31fae688f4eaa08099e8297f1be2823d2dbebf7b Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.68 EUR
13+5.88 EUR
14+5.23 EUR
30+4.29 EUR
Mindestbestellmenge: 11
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IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4B1227AD871CC&compId=IKW40N120H3-DTE.pdf?ci_sign=f8b339f1e873d397d5d01461d09440706297c41f Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.38 EUR
11+6.64 EUR
30+5.86 EUR
120+5.28 EUR
240+4.92 EUR
Mindestbestellmenge: 10
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IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD0E2F7E6320259&compId=IKW40N120T2.pdf?ci_sign=6bbbb8c74de3acef3716a77652baf5b260d1e5ac Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 165A
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.35 EUR
10+7.38 EUR
11+6.65 EUR
Mindestbestellmenge: 9
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IKY40N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF3053B408E7820&compId=IKY40N120CH3.pdf?ci_sign=6f1d0b3f6ef77831abed12e2ffc7daa6f0f4c068 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Produkt ist nicht verfügbar
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IKY40N120CS6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF30BD6FCDAB820&compId=IKY40N120CS6.pdf?ci_sign=341ed47cf8e6482e67d81b7d878f560b2cace0b7 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F33308FC6DE11C&compId=IPD090N03LG-DTE.pdf?ci_sign=9a4be819311a50a24b55811cccea1abba829cef9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2161 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
94+0.76 EUR
101+0.71 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 80
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IRL2203NSTRLPBF IRL2203NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22272FD5B2EC9F1A303005056AB0C4F&compId=irl2203nspbf.pdf?ci_sign=338ad334b3f34a2957cf0ae5f23cffd55bfac9a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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PVT422PBF PVT422PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.25VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Operate time: 2ms
Control current: 2...25mA
Relay variant: MOSFET
Max. operating current: 350mA
Control voltage: 1.25V DC
On-state resistance: 35Ω
Manufacturer series: PVT422PbF
Contacts configuration: DPST-NO
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PVT422SPBF PVT422SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Operate time: 2ms
Control current: 2...25mA
Relay variant: MOSFET
Max. operating current: 350mA
Control voltage: 1.2V DC
On-state resistance: 35Ω
Manufacturer series: PVT422PbF
Contacts configuration: DPST-NO
auf Bestellung 10 Stücke:
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8+9.3 EUR
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IGB20N65S5ATMA1 IGB20N65S5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6C96BEB6D820&compId=IGB20N65S5.pdf?ci_sign=a4d8b063edbd433beb9ed958c8c2ba441c0328b3 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-on time: 27ns
Gate charge: 48nC
Turn-off time: 137ns
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IHW20N65R5XKSA1 IHW20N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC6BCE91BE1820&compId=IHW20N65R5.pdf?ci_sign=b44b2ed99f625095237ebaf7c9ffdee8198ae140 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Turn-off time: 257ns
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
auf Bestellung 913 Stücke:
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19+3.78 EUR
27+2.66 EUR
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SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D5A62F654D811C&compId=SPD50N03S207G-DTE.pdf?ci_sign=068d79be9e9d324ac6f1de7a5a630c5f9ecd67a2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
106+0.67 EUR
112+0.64 EUR
116+0.62 EUR
500+0.6 EUR
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BSC050N03LSGATMA1 BSC050N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FCC41651611C&compId=BSC050N03LSG-DTE.pdf?ci_sign=55fc8546e1bdca0ab93af1429ad045914edb6305 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC050N03MSGATMA1 BSC050N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FE70931A411C&compId=BSC050N03MSG-DTE.pdf?ci_sign=30504bf576f6632aed8312b78da20e1992fd0544 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0EB1F2E8A11C&compId=BSZ050N03LSG-DTE.pdf?ci_sign=9f16a7c062b56041a9272d38bed4641b6e009ba8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E131A2C06811C&compId=BSZ050N03MSG-DTE.pdf?ci_sign=2cf09708082e3be57659c3c3e831485885c116b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F31FCD9EF4C11C&compId=IPD050N03LG-DTE.pdf?ci_sign=d06db5c93bba5c2107dc7137cf96d635f8618866 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1611 Stücke:
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51+1.42 EUR
100+0.72 EUR
127+0.57 EUR
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SPA11N80C3 SPA11N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Kind of package: tube
Technology: CoolMOS™
Case: PG-TO220-3-FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain current: 11A
Drain-source voltage: 800V
On-state resistance: 0.45Ω
Gate-source voltage: ±20V
Power dissipation: 34W
auf Bestellung 59 Stücke:
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34+2.14 EUR
36+2.03 EUR
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SPP11N80C3 SPP11N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1E5D4C00111BF&compId=SPP11N80C3-dte.pdf?ci_sign=b26c2386ea50a5506f83eacecebe4bf1a2b7bb44 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 73 Stücke:
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35+2.09 EUR
37+1.97 EUR
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SPW11N80C3 SPW11N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FF4C2BAF7A71BF&compId=SPW11N80C3-DTE.pdf?ci_sign=a5731e027b48697bfb5b7b556dd38587c18e85a8 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7101TRPBF IRF7101TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F72EDED7238F1A303005056AB0C4F&compId=irf7101pbf.pdf?ci_sign=aaac22e0b6c73d3d5db65aef3b433a69d403b0bc Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7103TRPBF IRF7103TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F730DD100BCF1A303005056AB0C4F&compId=irf7103pbf.pdf?ci_sign=2b12eb75b5f6dce55c65084304d884f8b12d91e4 description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7104TRPBF IRF7104TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73473BB245F1A303005056AB0C4F&compId=irf7104pbf.pdf?ci_sign=e5ad76f1ac31c77ea305a7fd6f10a5c85b412e65 description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7105TRPBF IRF7105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F73624E9CF8F1A303005056AB0C4F&compId=irf7105pbf.pdf?ci_sign=dd73476fc951e3f65fd1e97ec32dcb771610ef64 description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 3805 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
132+0.54 EUR
158+0.45 EUR
180+0.4 EUR
345+0.21 EUR
365+0.2 EUR
Mindestbestellmenge: 95
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AUIRF7103QTR AUIRF7103QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F732C397812F1A303005056AB0C4F&compId=irf7103qpbf.pdf?ci_sign=6f2d86b4e3f859b06ae14d68aec215fa828791c2 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 2.4W
Gate-source voltage: ±20V
Technology: HEXFET®
Gate charge: 10nC
On-state resistance: 0.2Ω
Produkt ist nicht verfügbar
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IRF9310TRPBF IRF9310TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AF185413D2F1A303005056AB0C4F&compId=irf9310pbf.pdf?ci_sign=e3a7f7b06c7da9c24a173beec3710b94b88c4fe4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 696 Stücke:
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36+1.99 EUR
49+1.48 EUR
120+0.6 EUR
127+0.56 EUR
Mindestbestellmenge: 36
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IRFZ34NPBF IRFZ34NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D5055B0F1A6F5005056AB5A8F&compId=irfz34n.pdf?ci_sign=686bda4beadb73c469501e8a6160e62db2558a32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 803 Stücke:
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139+0.51 EUR
198+0.36 EUR
210+0.34 EUR
Mindestbestellmenge: 139
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IRFZ34NSTRLPBF IRFZ34NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221CA5807D86BF1A303005056AB0C4F&compId=irfz34nspbf.pdf?ci_sign=2fff9063d2b86069a4b91f953d0d75984c82566e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPP055N03LGXKSA1 IPP055N03LGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC943DE51411C&compId=IPP055N03LG-DTE.pdf?ci_sign=4c046460a84c3cb82bd98e0e42db4e2dee8ace2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3-1
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
auf Bestellung 26 Stücke:
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26+2.75 EUR
Mindestbestellmenge: 26
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BTS721L1 BTS721L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD63E1D1A0DB5EA&compId=BTS721L1.pdf?ci_sign=dc89e9f4aa46a4b01ce52b4c4547a9f1890db8d6 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Number of channels: 4
Mounting: SMD
Case: DSO20
On-state resistance: 25mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Supply voltage: 5...34V DC
Power dissipation: 3.7W
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.81 EUR
12+6.02 EUR
Mindestbestellmenge: 10
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IPD060N03LGATMA1 IPD060N03LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F322FAA4E5C11C&compId=IPD060N03LG-DTE.pdf?ci_sign=7dd05ce845a4f67fba2b0dcdc3fd5e00f47869b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2469 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
126+0.57 EUR
128+0.56 EUR
Mindestbestellmenge: 122
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IRFP4568PBF IRFP4568PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C084F1A6F5005056AB5A8F&compId=irfp4568pbf.pdf?ci_sign=cd4a3c3005dfa3acc21d8e71cc6c8608fe85a120 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.26 EUR
21+3.45 EUR
22+3.26 EUR
Mindestbestellmenge: 14
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IRFL024NTRPBF IRFL024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BD84F5CA48F1A303005056AB0C4F&compId=irfl024npbf.pdf?ci_sign=82149718abf7d65abc0cc3f966ed8e67d81b09e0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGP40N65F5XKSA1 IGP40N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.43 EUR
22+3.3 EUR
26+2.76 EUR
Mindestbestellmenge: 21
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IGP40N65H5XKSA1 IGP40N65H5XKSA1 INFINEON TECHNOLOGIES DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
33+2.19 EUR
50+1.93 EUR
100+1.74 EUR
500+1.62 EUR
Mindestbestellmenge: 28
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IGW40N65F5FKSA1 IGW40N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.8 EUR
22+3.36 EUR
24+3.03 EUR
30+2.73 EUR
Mindestbestellmenge: 19
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IGW40N65H5FKSA1 IGW40N65H5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF18CC50EC600D5&compId=IGW40N65H5FKSA1.pdf?ci_sign=ae5af7233e9af26b6ec8388b5d40301b249f336e Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.46 EUR
19+3.93 EUR
30+3.5 EUR
120+3.19 EUR
Mindestbestellmenge: 17
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IHW40N65R5XKSA1 IHW40N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCF82A829F1820&compId=IHW40N65R5.pdf?ci_sign=f2b3df89ecc5884a555765950a699d043f13b658 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.67 EUR
34+2.13 EUR
42+1.72 EUR
Mindestbestellmenge: 27
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IHW40N65R6XKSA1 IHW40N65R6XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.06 EUR
27+2.69 EUR
30+2.56 EUR
Mindestbestellmenge: 18
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IR2127SPBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3443F1A6F5005056AB5A8F&compId=ir2127spbf.pdf?ci_sign=203f11987e306e198516b74fa296a60c82b6b5ef
IR2127SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
32+2.29 EUR
95+1.96 EUR
Mindestbestellmenge: 24
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IGT60R190D1SATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE4549364958BF&compId=IGT60R190D1SATMA1.pdf?ci_sign=500d5346868d9d0d739574ae6a7257e739be002c
IGT60R190D1SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 23A
Power dissipation: 55.5W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 3.2nC
Gate current: 7.7mA
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IR2117PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
27+2.7 EUR
30+2.4 EUR
31+2.32 EUR
50+2.2 EUR
Mindestbestellmenge: 23
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IR2117SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
50+1.44 EUR
53+1.36 EUR
57+1.26 EUR
Mindestbestellmenge: 40
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IR2111PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD33FDF1A6F5005056AB5A8F&compId=ir2111.pdf?ci_sign=cfae4f602fb7282d14336c0c0f16766cd0eadcb6
IR2111PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 1W
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.05 EUR
31+2.33 EUR
34+2.16 EUR
Mindestbestellmenge: 24
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IR2111SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC01A6BF4675EA&compId=IR2111SPBF.pdf?ci_sign=e56e32f57f9de1414cd99b1b3cad0ce56d1a2232
IR2111SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 625mW
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
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BC847PNH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6A4E750E1A469&compId=BC846PNH6327.pdf?ci_sign=b3d707a0c8687f7783b02bc7f504750648a3ba4c
BC847PNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2015 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
424+0.17 EUR
544+0.13 EUR
1000+0.094 EUR
Mindestbestellmenge: 295
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BSP125H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A70B1D8F42B10B&compId=BSP125H6327XTSA1.pdf?ci_sign=8a5ccf72a5d3019ef8a407058267491d6698e74a
BSP125H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 961 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
106+0.68 EUR
153+0.47 EUR
162+0.44 EUR
200+0.43 EUR
Mindestbestellmenge: 67
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BSD235NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D9351407710B&compId=BSD235NH6327XTSA1.pdf?ci_sign=a8d66b3001a4107b60a345b215d15bbd6fd4e9b1
BSD235NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Drain current: 0.95A
Technology: OptiMOS™ 2
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
305+0.23 EUR
371+0.19 EUR
454+0.16 EUR
Mindestbestellmenge: 179
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BSD840NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5EF6CF788910B&compId=BSD840NH6327XTSA1.pdf?ci_sign=5b04d5f43bcba673eb33cf4377e0362af3f23a9e
BSD840NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 0.88A
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 3961 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
283+0.25 EUR
404+0.18 EUR
472+0.15 EUR
794+0.09 EUR
834+0.086 EUR
3000+0.083 EUR
Mindestbestellmenge: 209
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BSS214NWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7D848CA9B710B&compId=BSS214NWH6327XTSA1.pdf?ci_sign=5c615cce946f0aa6b4aace9b25942d6eab7b2b3c
BSS214NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
538+0.13 EUR
814+0.088 EUR
937+0.076 EUR
1382+0.052 EUR
1462+0.049 EUR
Mindestbestellmenge: 385
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IRL2505PBF description pVersion=0046&contRep=ZT&docId=E2227317C98B92F1A303005056AB0C4F&compId=irl2505pbf.pdf?ci_sign=f6bfba5649d0dd9c0ee6df3f8e5c34860d2b83d7
IRL2505PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRL2505STRLPBF irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7201TRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC6FF95B2795EA&compId=IRF7201TRPBF.pdf?ci_sign=1faf568f52c19e8c6dcda73263526dccd2553458
IRF7201TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7205TRPBF description pVersion=0046&contRep=ZT&docId=E21F73B8475059F1A303005056AB0C4F&compId=irf7205pbf.pdf?ci_sign=9c16f80a8aabbea691f6d1023906fcaa71ff4780
IRF7205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 2506 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
208+0.34 EUR
221+0.32 EUR
Mindestbestellmenge: 107
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IPD50N10S3L16ATMA1 Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Technology: OptiMOS® -T
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 38A
Drain-source voltage: 100V
On-state resistance: 15mΩ
Kind of channel: enhancement
Case: PG-TO252-3-11
Gate-source voltage: ±20V
Power dissipation: 100W
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3717611A24FA8&compId=IGW40N120H3-DTE.pdf?ci_sign=6b7e50c22310b6e9d6b61594307c9e8b688024d8
IGW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Gate-emitter voltage: ±20V
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.56 EUR
12+6.11 EUR
30+5 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N120R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCA5EF2915F820&compId=IHW40N120R5.pdf?ci_sign=ff87a8c36a7c399a49fec60936b41c23e7a4c9aa
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.23 EUR
16+4.49 EUR
21+3.5 EUR
23+3.22 EUR
Mindestbestellmenge: 14
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IKQ40N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFF7BE8F13C749&compId=IKQ40N120CH3.pdf?ci_sign=c8ed0c89fcc600022b2a871e0b32fde7f3676f73
IKQ40N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Produkt ist nicht verfügbar
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IKQ40N120CT2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AFD6AC8EDA0749&compId=IKQ40N120CT2.pdf?ci_sign=8253bd2051f94bd3337d2fb92cd05a3b6edcd14b
IKQ40N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE986B0A66D3DFBB8BF&compId=IKW40N120CS6.pdf?ci_sign=31fae688f4eaa08099e8297f1be2823d2dbebf7b
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.68 EUR
13+5.88 EUR
14+5.23 EUR
30+4.29 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4B1227AD871CC&compId=IKW40N120H3-DTE.pdf?ci_sign=f8b339f1e873d397d5d01461d09440706297c41f
IKW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.38 EUR
11+6.64 EUR
30+5.86 EUR
120+5.28 EUR
240+4.92 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120T2FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD0E2F7E6320259&compId=IKW40N120T2.pdf?ci_sign=6bbbb8c74de3acef3716a77652baf5b260d1e5ac
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 165A
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.35 EUR
10+7.38 EUR
11+6.65 EUR
Mindestbestellmenge: 9
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IKY40N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF3053B408E7820&compId=IKY40N120CH3.pdf?ci_sign=6f1d0b3f6ef77831abed12e2ffc7daa6f0f4c068
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKY40N120CS6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF30BD6FCDAB820&compId=IKY40N120CS6.pdf?ci_sign=341ed47cf8e6482e67d81b7d878f560b2cace0b7
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD090N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F33308FC6DE11C&compId=IPD090N03LG-DTE.pdf?ci_sign=9a4be819311a50a24b55811cccea1abba829cef9
IPD090N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
94+0.76 EUR
101+0.71 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
IRL2203NSTRLPBF pVersion=0046&contRep=ZT&docId=E22272FD5B2EC9F1A303005056AB0C4F&compId=irl2203nspbf.pdf?ci_sign=338ad334b3f34a2957cf0ae5f23cffd55bfac9a8
IRL2203NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT422PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e
PVT422PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.25VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Operate time: 2ms
Control current: 2...25mA
Relay variant: MOSFET
Max. operating current: 350mA
Control voltage: 1.25V DC
On-state resistance: 35Ω
Manufacturer series: PVT422PbF
Contacts configuration: DPST-NO
Produkt ist nicht verfügbar
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PVT422SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D6CE9F1E81EC&compId=pvt422.pdf?ci_sign=3f2ba5943339d5ad4b75c4067aaf5ceb997c203e
PVT422SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Operate time: 2ms
Control current: 2...25mA
Relay variant: MOSFET
Max. operating current: 350mA
Control voltage: 1.2V DC
On-state resistance: 35Ω
Manufacturer series: PVT422PbF
Contacts configuration: DPST-NO
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.3 EUR
Mindestbestellmenge: 8
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IGB20N65S5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6C96BEB6D820&compId=IGB20N65S5.pdf?ci_sign=a4d8b063edbd433beb9ed958c8c2ba441c0328b3
IGB20N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-on time: 27ns
Gate charge: 48nC
Turn-off time: 137ns
Produkt ist nicht verfügbar
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IHW20N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC6BCE91BE1820&compId=IHW20N65R5.pdf?ci_sign=b44b2ed99f625095237ebaf7c9ffdee8198ae140
IHW20N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Turn-off time: 257ns
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD5B574119B820&compId=IKB20N65EH5.pdf?ci_sign=84117916d2af3cf46356ecf8de4185ed193d681c
IKB20N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.78 EUR
27+2.66 EUR
Mindestbestellmenge: 19
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SPD50N03S207GBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D5A62F654D811C&compId=SPD50N03S207G-DTE.pdf?ci_sign=068d79be9e9d324ac6f1de7a5a630c5f9ecd67a2
SPD50N03S207GBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
106+0.67 EUR
112+0.64 EUR
116+0.62 EUR
500+0.6 EUR
Mindestbestellmenge: 103
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BSC050N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FCC41651611C&compId=BSC050N03LSG-DTE.pdf?ci_sign=55fc8546e1bdca0ab93af1429ad045914edb6305
BSC050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC050N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FE70931A411C&compId=BSC050N03MSG-DTE.pdf?ci_sign=30504bf576f6632aed8312b78da20e1992fd0544
BSC050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0EB1F2E8A11C&compId=BSZ050N03LSG-DTE.pdf?ci_sign=9f16a7c062b56041a9272d38bed4641b6e009ba8
BSZ050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E131A2C06811C&compId=BSZ050N03MSG-DTE.pdf?ci_sign=2cf09708082e3be57659c3c3e831485885c116b9
BSZ050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD050N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F31FCD9EF4C11C&compId=IPD050N03LG-DTE.pdf?ci_sign=d06db5c93bba5c2107dc7137cf96d635f8618866
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1611 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
100+0.72 EUR
127+0.57 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
SPA11N80C3 description
SPA11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Kind of package: tube
Technology: CoolMOS™
Case: PG-TO220-3-FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain current: 11A
Drain-source voltage: 800V
On-state resistance: 0.45Ω
Gate-source voltage: ±20V
Power dissipation: 34W
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.29 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 22
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SPP11N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1E5D4C00111BF&compId=SPP11N80C3-dte.pdf?ci_sign=b26c2386ea50a5506f83eacecebe4bf1a2b7bb44
SPP11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.8 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 19
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SPW11N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FF4C2BAF7A71BF&compId=SPW11N80C3-DTE.pdf?ci_sign=a5731e027b48697bfb5b7b556dd38587c18e85a8
SPW11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7101TRPBF pVersion=0046&contRep=ZT&docId=E21F72EDED7238F1A303005056AB0C4F&compId=irf7101pbf.pdf?ci_sign=aaac22e0b6c73d3d5db65aef3b433a69d403b0bc
IRF7101TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7103TRPBF description pVersion=0046&contRep=ZT&docId=E21F730DD100BCF1A303005056AB0C4F&compId=irf7103pbf.pdf?ci_sign=2b12eb75b5f6dce55c65084304d884f8b12d91e4
IRF7103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7104TRPBF description pVersion=0046&contRep=ZT&docId=E21F73473BB245F1A303005056AB0C4F&compId=irf7104pbf.pdf?ci_sign=e5ad76f1ac31c77ea305a7fd6f10a5c85b412e65
IRF7104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF7105TRPBF description pVersion=0046&contRep=ZT&docId=E21F73624E9CF8F1A303005056AB0C4F&compId=irf7105pbf.pdf?ci_sign=dd73476fc951e3f65fd1e97ec32dcb771610ef64
IRF7105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 3805 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
132+0.54 EUR
158+0.45 EUR
180+0.4 EUR
345+0.21 EUR
365+0.2 EUR
Mindestbestellmenge: 95
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AUIRF7103QTR pVersion=0046&contRep=ZT&docId=E21F732C397812F1A303005056AB0C4F&compId=irf7103qpbf.pdf?ci_sign=6f2d86b4e3f859b06ae14d68aec215fa828791c2
AUIRF7103QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 2.4W
Gate-source voltage: ±20V
Technology: HEXFET®
Gate charge: 10nC
On-state resistance: 0.2Ω
Produkt ist nicht verfügbar
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IRF9310TRPBF pVersion=0046&contRep=ZT&docId=E221AF185413D2F1A303005056AB0C4F&compId=irf9310pbf.pdf?ci_sign=e3a7f7b06c7da9c24a173beec3710b94b88c4fe4
IRF9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 696 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
49+1.48 EUR
120+0.6 EUR
127+0.56 EUR
Mindestbestellmenge: 36
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IRFZ34NPBF pVersion=0046&contRep=ZT&docId=E1C04E7D5055B0F1A6F5005056AB5A8F&compId=irfz34n.pdf?ci_sign=686bda4beadb73c469501e8a6160e62db2558a32
IRFZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 803 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
198+0.36 EUR
210+0.34 EUR
Mindestbestellmenge: 139
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IRFZ34NSTRLPBF pVersion=0046&contRep=ZT&docId=E221CA5807D86BF1A303005056AB0C4F&compId=irfz34nspbf.pdf?ci_sign=2fff9063d2b86069a4b91f953d0d75984c82566e
IRFZ34NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPP055N03LGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC943DE51411C&compId=IPP055N03LG-DTE.pdf?ci_sign=4c046460a84c3cb82bd98e0e42db4e2dee8ace2f
IPP055N03LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3-1
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.75 EUR
Mindestbestellmenge: 26
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BTS721L1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD63E1D1A0DB5EA&compId=BTS721L1.pdf?ci_sign=dc89e9f4aa46a4b01ce52b4c4547a9f1890db8d6
BTS721L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Number of channels: 4
Mounting: SMD
Case: DSO20
On-state resistance: 25mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Supply voltage: 5...34V DC
Power dissipation: 3.7W
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.81 EUR
12+6.02 EUR
Mindestbestellmenge: 10
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IPD060N03LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F322FAA4E5C11C&compId=IPD060N03LG-DTE.pdf?ci_sign=7dd05ce845a4f67fba2b0dcdc3fd5e00f47869b8
IPD060N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
126+0.57 EUR
128+0.56 EUR
Mindestbestellmenge: 122
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IRFP4568PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C084F1A6F5005056AB5A8F&compId=irfp4568pbf.pdf?ci_sign=cd4a3c3005dfa3acc21d8e71cc6c8608fe85a120
IRFP4568PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.26 EUR
21+3.45 EUR
22+3.26 EUR
Mindestbestellmenge: 14
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IRFL024NTRPBF pVersion=0046&contRep=ZT&docId=E221BD84F5CA48F1A303005056AB0C4F&compId=irfl024npbf.pdf?ci_sign=82149718abf7d65abc0cc3f966ed8e67d81b09e0
IRFL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP40N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8
IGP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
22+3.3 EUR
26+2.76 EUR
Mindestbestellmenge: 21
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IGP40N65H5XKSA1 DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6
IGP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
33+2.19 EUR
50+1.93 EUR
100+1.74 EUR
500+1.62 EUR
Mindestbestellmenge: 28
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IGW40N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B357CE50A06FA8&compId=IGP40N65F5XKSA1-DTE.pdf?ci_sign=5364802f19d02231e857b5a684b7d43fa931e4d8
IGW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.8 EUR
22+3.36 EUR
24+3.03 EUR
30+2.73 EUR
Mindestbestellmenge: 19
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IGW40N65H5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF18CC50EC600D5&compId=IGW40N65H5FKSA1.pdf?ci_sign=ae5af7233e9af26b6ec8388b5d40301b249f336e
IGW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
19+3.93 EUR
30+3.5 EUR
120+3.19 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCF82A829F1820&compId=IHW40N65R5.pdf?ci_sign=f2b3df89ecc5884a555765950a699d043f13b658
IHW40N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
34+2.13 EUR
42+1.72 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R6XKSA1 Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275
IHW40N65R6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
27+2.69 EUR
30+2.56 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
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