Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148627) > Seite 2452 nach 2478
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IKW40N120CS7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Power dissipation: 179W Case: TO247-3 Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 45ns Pulsed collector current: 120A Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode Collector current: 56A Technology: TRENCHSTOP™ Turn-off time: 0.5µs Gate-emitter voltage: ±20V |
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IPP114N12N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 120V Drain current: 75A On-state resistance: 11.4mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2184STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
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IRS2453DSTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V Type of integrated circuit: driver Kind of integrated circuit: ballast controller; gate driver; high-/low-side Output current: -260...180mA Supply voltage: 10...16.6V DC Case: SO14 Mounting: SMD Operating temperature: -25...125°C Power: 1W Turn-on time: 0.12µs Turn-off time: 50ns Number of channels: 4 Kind of package: reel; tape Topology: H-bridge Voltage class: 600V |
Produkt ist nicht verfügbar |
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IR21094STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
auf Bestellung 1965 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6502VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape Mounting: SMD Case: SC79 Capacitance: 0.5pF Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode Leakage current: 20nA Kind of package: reel; tape Type of diode: varicap Features of semiconductor devices: PIN; RF |
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TZ430N22KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; single thyristor; 2.2kV; 430A; BG-PB501-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB501-1 Max. off-state voltage: 2.2kV Max. forward voltage: 1.78V Load current: 430A Semiconductor structure: single thyristor Gate current: 300mA Max. forward impulse current: 14kA |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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TT425N16KOFHPSA3 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.6kV; 471A; BG-PB60AT-1; screw Gate current: 250mA Max. forward impulse current: 14.5kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB60AT-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.5V Load current: 471A Semiconductor structure: double series |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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FM24CL64B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FM24C64B-GTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Supply voltage: 4.5...5.5V DC Clock frequency: 1MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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S29AL008J55TFIR23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Case: TSOP48 Operating voltage: 3...3.6V Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 55ns Kind of package: reel; tape Kind of interface: parallel Memory: 8Mb FLASH Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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S29GL256S10DHA020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
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S29GL256S10DHB020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
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S29GL256S10DHB023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
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S29GL256S10DHI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
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S29GL256S10DHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
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S29GL256S10DHI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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S29GL256S10DHIV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
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S29GL256S10DHIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL256S10DHIV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL256S10DHV010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL256S10DHV020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
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S29GL256S10DHV023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL256S10FHI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL256S10FHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
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CY15B204QN-40SXE | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8 Case: SOIC8 Mounting: SMD Supply voltage: 1.8...3.6V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 40MHz Memory: 4Mb FRAM Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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CY15B204QN-40SXET | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8 Case: SOIC8 Mounting: SMD Kind of package: reel; tape Supply voltage: 1.8...3.6V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM Memory organisation: 512kx8bit Clock frequency: 40MHz Memory: 4Mb FRAM Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL01GT11DHIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Output voltage: 1.65...3.6V DC Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Kind of interface: parallel Memory: 1Gb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL01GT11DHIV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Output voltage: 1.65...3.6V DC Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Kind of interface: parallel Memory: 1Gb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL01GT11DHV023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Kind of interface: parallel Memory: 1Gb FLASH Operating temperature: -40...105°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL01GT11FHIV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Output voltage: 1.65...3.6V DC Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Kind of interface: parallel Memory: 1Gb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL01GT11FHIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Output voltage: 1.65...3.6V DC Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Kind of interface: parallel Memory: 1Gb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL01GT11FHIV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Output voltage: 1.65...3.6V DC Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Kind of interface: parallel Memory: 1Gb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL01GT11TFB020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel Case: TSOP56 Mounting: SMD Kind of package: in-tray Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Application: automotive Kind of interface: parallel Memory: 1Gb FLASH Operating temperature: -40...105°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL01GT11TFIV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel Case: TSOP56 Mounting: SMD Kind of package: in-tray Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Kind of interface: parallel Memory: 1Gb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL01GT11TFIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel Case: TSOP56 Mounting: SMD Kind of package: in-tray Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Kind of interface: parallel Memory: 1Gb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70GL02GT11FHB013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Application: automotive Kind of interface: parallel Memory: 2Gb FLASH Operating temperature: -40...105°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S70GL02GT11FHI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Type of integrated circuit: FLASH memory Interface: CFI; parallel Kind of memory: NOR Flash Access time: 110ns Kind of interface: parallel Memory: 2Gb FLASH Operating temperature: -40...85°C Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FM25L16B-DG | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: SPI Memory organisation: 2kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 20MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FM25L16B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: SPI Memory organisation: 2kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 20MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY7C1312KV18-250BZXCT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Mounting: SMD Case: FBGA165 Operating temperature: 0...70°C Kind of package: reel; tape Memory: 18Mb SRAM Supply voltage: 1.7...1.9V DC Frequency: 250MHz Kind of memory: SRAM Memory organisation: 1Mx18bit Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FM25CL64B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Memory organisation: 8kx8bit Clock frequency: 20MHz Kind of package: reel; tape Memory: 64kb FRAM Case: DFN8 Supply voltage: 2.7...3.65V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FM25L04B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 4kb FRAM Interface: SPI Memory organisation: 512x8bit Supply voltage: 2.7...3.6V DC Clock frequency: 20MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FM25V05-GTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8 Mounting: SMD Operating temperature: -40...85°C Memory organisation: 64kx8bit Clock frequency: 40MHz Kind of package: reel; tape Memory: 512kb FRAM Case: SOIC8 Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FM25V10-DG | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 1Mb FRAM Interface: SPI Memory organisation: 128kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S25FL128LAGNFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Operating temperature: -40...105°C Case: WSON8 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Application: automotive Kind of package: reel; tape Operating frequency: 133MHz Kind of interface: serial Memory: 128Mb FLASH Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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TLV4906KFTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C Type of sensor: Hall Case: SC59 Range of detectable magnetic field: 4.7...13.9mT Supply voltage: 2.7...18V DC Operating temperature: -40...85°C Output configuration: analogue voltage Operation mode: unipolar |
auf Bestellung 2624 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL7440PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 147A Pulsed drain current: 772A Power dissipation: 208W Case: TO262 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 106 Stücke: Lieferzeit 14-21 Tag (e) |
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S25HS02GTDPBHB053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Application: automotive Kind of package: reel; tape Operating frequency: 133MHz Kind of interface: serial Memory: 2Gb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S25HS02GTDPBHV053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Kind of package: reel; tape Operating frequency: 133MHz Kind of interface: serial Memory: 2Gb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S28HS02GTFPBHV050 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Type of integrated circuit: FLASH memory Interface: octal Kind of memory: NOR Flash Kind of package: in-tray Operating frequency: 166MHz Kind of interface: serial Memory: 2Gb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S28HS02GTFPBHV053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Type of integrated circuit: FLASH memory Interface: octal Kind of memory: NOR Flash Kind of package: reel; tape Operating frequency: 166MHz Kind of interface: serial Memory: 2Gb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY62168EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
CY62168EV30LL-45BVXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BFQ19SH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Power dissipation: 1W Case: SOT89 Kind of package: reel; tape Frequency: 5.5GHz Mounting: SMD Collector-emitter voltage: 20V Collector current: 0.12A |
auf Bestellung 979 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4510PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262 Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Case: TO262 Kind of package: tube Mounting: THT Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: 100V Drain current: 64A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPB65R110CFDATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IPP17N25S3100AKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A Mounting: THT Case: PG-TO220-3 Drain-source voltage: 250V Drain current: 13.3A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Technology: OptiMOS™ T Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 68A |
auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
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IMW120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 45A Pulsed drain current: 150A Power dissipation: 114W Case: TO247 Gate-source voltage: -7...23V On-state resistance: 57mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IMW120R014M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W Mounting: THT Drain-source voltage: 1.2kV Drain current: 89.3A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhancement Gate-source voltage: -7...20V Pulsed drain current: 267.9A Case: TO247 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IKW40N120CS7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 56A
Technology: TRENCHSTOP™
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 56A
Technology: TRENCHSTOP™
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP114N12N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.27 EUR |
45+ | 1.62 EUR |
48+ | 1.52 EUR |
IRS2184STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRS2453DSTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Output current: -260...180mA
Supply voltage: 10...16.6V DC
Case: SO14
Mounting: SMD
Operating temperature: -25...125°C
Power: 1W
Turn-on time: 0.12µs
Turn-off time: 50ns
Number of channels: 4
Kind of package: reel; tape
Topology: H-bridge
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Output current: -260...180mA
Supply voltage: 10...16.6V DC
Case: SO14
Mounting: SMD
Operating temperature: -25...125°C
Power: 1W
Turn-on time: 0.12µs
Turn-off time: 50ns
Number of channels: 4
Kind of package: reel; tape
Topology: H-bridge
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR21094STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 1965 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.13 EUR |
44+ | 1.63 EUR |
56+ | 1.29 EUR |
59+ | 1.22 EUR |
BAR6502VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Mounting: SMD
Case: SC79
Capacitance: 0.5pF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 20nA
Kind of package: reel; tape
Type of diode: varicap
Features of semiconductor devices: PIN; RF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TZ430N22KOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 430A; BG-PB501-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB501-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.78V
Load current: 430A
Semiconductor structure: single thyristor
Gate current: 300mA
Max. forward impulse current: 14kA
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 430A; BG-PB501-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB501-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.78V
Load current: 430A
Semiconductor structure: single thyristor
Gate current: 300mA
Max. forward impulse current: 14kA
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 147.18 EUR |
TT425N16KOFHPSA3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 471A; BG-PB60AT-1; screw
Gate current: 250mA
Max. forward impulse current: 14.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60AT-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.5V
Load current: 471A
Semiconductor structure: double series
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 471A; BG-PB60AT-1; screw
Gate current: 250mA
Max. forward impulse current: 14.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60AT-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.5V
Load current: 471A
Semiconductor structure: double series
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 401.54 EUR |
FM24CL64B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM24C64B-GTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55TFIR23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10DHA020 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10DHB020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10DHB023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10DHI010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10DHI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10DHI023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29GL256S10DHIV10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
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S29GL256S10DHIV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
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S29GL256S10DHIV23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10DHV010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10DHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10DHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10FHI010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S10FHI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY15B204QN-40SXE |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 40MHz
Memory: 4Mb FRAM
Operating temperature: -40...125°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 40MHz
Memory: 4Mb FRAM
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B204QN-40SXET |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 40MHz
Memory: 4Mb FRAM
Operating temperature: -40...125°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512kx8bit
Clock frequency: 40MHz
Memory: 4Mb FRAM
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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S29GL01GT11DHIV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GT11DHIV23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GT11DHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...105°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...105°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GT11FHIV10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GT11FHIV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GT11FHIV23 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.65...3.6V DC
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GT11TFB020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Application: automotive
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...105°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Application: automotive
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...105°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GT11TFIV10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL01GT11TFIV20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 1Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70GL02GT11FHB013 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Application: automotive
Kind of interface: parallel
Memory: 2Gb FLASH
Operating temperature: -40...105°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Application: automotive
Kind of interface: parallel
Memory: 2Gb FLASH
Operating temperature: -40...105°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70GL02GT11FHI010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 2Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 2Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM25L16B-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM25L16B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1312KV18-250BZXCT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Memory: 18Mb SRAM
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Memory: 18Mb SRAM
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
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FM25CL64B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
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FM25L04B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: SPI
Memory organisation: 512x8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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FM25V05-GTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Kind of package: reel; tape
Memory: 512kb FRAM
Case: SOIC8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Kind of package: reel; tape
Memory: 512kb FRAM
Case: SOIC8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
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FM25V10-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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S25FL128LAGNFB013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLV4906KFTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 2624 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.50 EUR |
178+ | 0.40 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
200+ | 0.36 EUR |
IRFSL7440PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 147A
Pulsed drain current: 772A
Power dissipation: 208W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 147A
Pulsed drain current: 772A
Power dissipation: 208W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
59+ | 1.22 EUR |
68+ | 1.06 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
S25HS02GTDPBHB053 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
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S25HS02GTDPBHV053 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
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S28HS02GTFPBHV050 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S28HS02GTFPBHV053 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY62168EV30LL-45BVXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62168EV30LL-45BVXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFQ19SH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 1W
Case: SOT89
Kind of package: reel; tape
Frequency: 5.5GHz
Mounting: SMD
Collector-emitter voltage: 20V
Collector current: 0.12A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 1W
Case: SOT89
Kind of package: reel; tape
Frequency: 5.5GHz
Mounting: SMD
Collector-emitter voltage: 20V
Collector current: 0.12A
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
113+ | 0.64 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
IRFSL4510PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Case: TO262
Kind of package: tube
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 64A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Case: TO262
Kind of package: tube
Mounting: THT
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 64A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB65R110CFDATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPP17N25S3100AKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 250V
Drain current: 13.3A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 250V
Drain current: 13.3A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
auf Bestellung 483 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.87 EUR |
27+ | 2.75 EUR |
30+ | 2.39 EUR |
32+ | 2.26 EUR |
33+ | 2.17 EUR |
IMW120R030M1HXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 45A
Pulsed drain current: 150A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...23V
On-state resistance: 57mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 45A
Pulsed drain current: 150A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...23V
On-state resistance: 57mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IMW120R014M1HXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 89.3A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -7...20V
Pulsed drain current: 267.9A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 89.3A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -7...20V
Pulsed drain current: 267.9A
Case: TO247
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH