Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148679) > Seite 2440 nach 2478

Wählen Sie Seite:   [  << Vorherige Seite ]  1 247 494 741 988 1235 1482 1729 1976 2223 2435 2436 2437 2438 2439 2440 2441 2442 2443 2444 2445 2470 2478  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRFP140NPBF IRFP140NPBF INFINEON TECHNOLOGIES irfp140n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
44+1.63 EUR
64+1.13 EUR
67+1.07 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
KIT_XMC11_BOOT_001 KIT_XMC11_BOOT_001 INFINEON TECHNOLOGIES KIT-XMC11-BOOT-001-DTE.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Kind of architecture: Cortex M0
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED diode x6; SEGGER J-Link OB Debugger; UART
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD06N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC150N03LDGATMA1 BSC150N03LDGATMA1 INFINEON TECHNOLOGIES BSC150N03LDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 INFINEON TECHNOLOGIES BSO150N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT62E6327HTSA1 BAT62E6327HTSA1 INFINEON TECHNOLOGIES BAT62E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky rectifying
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Power dissipation: 0.1W
auf Bestellung 1297 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
202+0.35 EUR
242+0.30 EUR
355+0.20 EUR
397+0.18 EUR
435+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
BAT6804WH6327XTSA1 BAT6804WH6327XTSA1 INFINEON TECHNOLOGIES BAT6804E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 8V; 0.13A; 150mW
Power dissipation: 0.15W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
132+0.54 EUR
183+0.39 EUR
194+0.37 EUR
250+0.36 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
IR21271PBF IR21271PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.19 EUR
28+2.65 EUR
29+2.50 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR21271SPBF IR21271SPBF INFINEON TECHNOLOGIES IR21271SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
36+1.99 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IR2127PBF IR2127PBF INFINEON TECHNOLOGIES IR21271SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.76 EUR
22+3.39 EUR
28+2.60 EUR
30+2.46 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IR2127SPBF IR2127SPBF INFINEON TECHNOLOGIES ir2127spbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.16 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IGT60R190D1SATMA1 IGT60R190D1SATMA1 INFINEON TECHNOLOGIES IGT60R190D1SATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 23A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 55.5W
Gate current: 7.7mA
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ24NSTRLPBF IRLZ24NSTRLPBF INFINEON TECHNOLOGIES irlz24nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3077PBF IRFP3077PBF INFINEON TECHNOLOGIES irfp3077pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 340W
Gate charge: 160nC
Technology: HEXFET®
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.33 EUR
25+2.86 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IR2117PBF IR2117PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Operating temperature: -40...125°C
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: THT
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.39 EUR
30+2.39 EUR
32+2.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.40 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2111PBF IR2111PBF INFINEON TECHNOLOGIES ir2111.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1W
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IR2111SPBF IR2111SPBF INFINEON TECHNOLOGIES IR2111SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
27+2.72 EUR
35+2.09 EUR
37+1.97 EUR
95+1.94 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BC847PNH6327XTSA1 BC847PNH6327XTSA1 INFINEON TECHNOLOGIES BC846PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
auf Bestellung 2125 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
355+0.20 EUR
459+0.16 EUR
676+0.11 EUR
715+0.10 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BSP125H6327XTSA1 BSP125H6327XTSA1 INFINEON TECHNOLOGIES BSP125H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Drain current: 0.12A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
Case: SOT223
Drain-source voltage: 600V
auf Bestellung 1072 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
88+0.81 EUR
153+0.47 EUR
162+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
BSD235NH6327XTSA1 BSD235NH6327XTSA1 INFINEON TECHNOLOGIES BSD235NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.95A
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
305+0.23 EUR
371+0.19 EUR
463+0.15 EUR
589+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BSD840NH6327XTSA1 BSD840NH6327XTSA1 INFINEON TECHNOLOGIES BSD840NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Case: SOT363
Drain-source voltage: 20V
Drain current: 0.88A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
auf Bestellung 4050 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
309+0.23 EUR
360+0.20 EUR
459+0.16 EUR
794+0.09 EUR
834+0.09 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 INFINEON TECHNOLOGIES BSS214NWH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3181 Stücke:
Lieferzeit 14-21 Tag (e)
241+0.30 EUR
341+0.21 EUR
509+0.14 EUR
587+0.12 EUR
854+0.08 EUR
903+0.08 EUR
1000+0.08 EUR
3000+0.08 EUR
Mindestbestellmenge: 241
Im Einkaufswagen  Stück im Wert von  UAH
IRL2505PBF IRL2505PBF INFINEON TECHNOLOGIES irl2505pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.53 EUR
35+2.04 EUR
47+1.53 EUR
50+1.46 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRL2505STRLPBF INFINEON TECHNOLOGIES irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7201TRPBF IRF7201TRPBF INFINEON TECHNOLOGIES IRF7201TRPBF.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7205TRPBF IRF7205TRPBF INFINEON TECHNOLOGIES irf7205pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 3543 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
208+0.34 EUR
221+0.32 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N10S3L16ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Technology: OptiMOS® -T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Case: PG-TO252-3-11
Drain current: 38A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES IAUT150N10S5N035.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES IGW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Collector current: 40A
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Gate-emitter voltage: ±20V
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.99 EUR
13+5.51 EUR
14+5.21 EUR
90+5.12 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES IHW40N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Technology: TRENCHSTOP™ RC
Turn-off time: 440ns
Gate-emitter voltage: ±20V
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.29 EUR
21+3.55 EUR
22+3.35 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 76ns
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Manufacturer series: H3
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ40N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™ 2
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES IKW40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™ 6
Gate-emitter voltage: ±20V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES IKW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES IKW40N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Pulsed collector current: 165A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.27 EUR
10+7.44 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKY40N120CH3XKSA1 INFINEON TECHNOLOGIES IKY40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-on time: 59ns
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Manufacturer series: H3
Technology: TRENCHSTOP™
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKY40N120CS6XKSA1 INFINEON TECHNOLOGIES IKY40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™ 6
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC750 WATT MOTOR CONTROL KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES IPD090N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
81+0.89 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
IRL2203NSTRLPBF IRL2203NSTRLPBF INFINEON TECHNOLOGIES irl2203nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT422PBF PVT422PBF INFINEON TECHNOLOGIES pvt422.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT422SPBF PVT422SPBF INFINEON TECHNOLOGIES pvt422.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.21 EUR
8+9.27 EUR
9+8.75 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IGB20N65S5ATMA1 IGB20N65S5ATMA1 INFINEON TECHNOLOGIES IGB20N65S5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 48nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 28A
Pulsed collector current: 80A
Turn-on time: 27ns
Turn-off time: 137ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N65R5XKSA1 IHW20N65R5XKSA1 INFINEON TECHNOLOGIES IHW20N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 20A
Pulsed collector current: 60A
Turn-off time: 257ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES IKB20N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 183ns
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
auf Bestellung 919 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.80 EUR
25+2.89 EUR
27+2.73 EUR
100+2.63 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 INFINEON TECHNOLOGIES SPD50N03S207G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1452 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.70 EUR
107+0.67 EUR
112+0.64 EUR
114+0.63 EUR
117+0.61 EUR
500+0.60 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
BSC050N03LSGATMA1 BSC050N03LSGATMA1 INFINEON TECHNOLOGIES BSC050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC050N03MSGATMA1 BSC050N03MSGATMA1 INFINEON TECHNOLOGIES BSC050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 INFINEON TECHNOLOGIES BSZ050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 INFINEON TECHNOLOGIES BSZ050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1646 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
73+0.99 EUR
115+0.62 EUR
122+0.59 EUR
1000+0.57 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
SPA11N80C3 SPA11N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N80C3 SPP11N80C3 INFINEON TECHNOLOGIES SPP11N80C3-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.80 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SPW11N80C3 SPW11N80C3 INFINEON TECHNOLOGIES SPW11N80C3-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7101TRPBF IRF7101TRPBF INFINEON TECHNOLOGIES irf7101pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103TRPBF IRF7103TRPBF INFINEON TECHNOLOGIES irf7103pbf.pdf description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 4228 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.15 EUR
97+0.74 EUR
274+0.26 EUR
290+0.25 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
IRF7104TRPBF IRF7104TRPBF INFINEON TECHNOLOGIES irf7104pbf.pdf description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7105TRPBF IRF7105TRPBF INFINEON TECHNOLOGIES irf7105pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7103QTR AUIRF7103QTR INFINEON TECHNOLOGIES irf7103qpbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Power dissipation: 2.4W
Gate charge: 10nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP140NPBF irfp140n.pdf
IRFP140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
44+1.63 EUR
64+1.13 EUR
67+1.07 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
KIT_XMC11_BOOT_001 KIT-XMC11-BOOT-001-DTE.pdf
KIT_XMC11_BOOT_001
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Kind of architecture: Cortex M0
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED diode x6; SEGGER J-Link OB Debugger; UART
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC150N03LDGATMA1 BSC150N03LDG-DTE.pdf
BSC150N03LDGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO150N03MDGXUMA1 BSO150N03MDG-DTE.pdf
BSO150N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT62E6327HTSA1 BAT62E6327HTSA1.pdf
BAT62E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky rectifying
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Power dissipation: 0.1W
auf Bestellung 1297 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
202+0.35 EUR
242+0.30 EUR
355+0.20 EUR
397+0.18 EUR
435+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
BAT6804WH6327XTSA1 BAT6804E6327HTSA1.pdf
BAT6804WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 8V; 0.13A; 150mW
Power dissipation: 0.15W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
132+0.54 EUR
183+0.39 EUR
194+0.37 EUR
250+0.36 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
IR21271PBF description IR21271SPBF.pdf
IR21271PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.19 EUR
28+2.65 EUR
29+2.50 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR21271SPBF IR21271SPBF.pdf
IR21271SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
36+1.99 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IR2127PBF description IR21271SPBF.pdf
IR2127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.76 EUR
22+3.39 EUR
28+2.60 EUR
30+2.46 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IR2127SPBF ir2127spbf.pdf
IR2127SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IGT60R190D1SATMA1 IGT60R190D1SATMA1.pdf
IGT60R190D1SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 23A
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 55.5W
Gate current: 7.7mA
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ24NSTRLPBF irlz24nspbf.pdf
IRLZ24NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3077PBF irfp3077pbf.pdf
IRFP3077PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 340W
Gate charge: 160nC
Technology: HEXFET®
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.33 EUR
25+2.86 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IR2117PBF ir2117.pdf
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Operating temperature: -40...125°C
Case: DIP8
Power: 1W
Supply voltage: 10...20V DC
Turn-on time: 125ns
Turn-off time: 105ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: tube
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: THT
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
30+2.39 EUR
32+2.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR2117SPBF description ir2117.pdf
IR2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.40 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IR2111PBF description ir2111.pdf
IR2111PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1W
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IR2111SPBF description IR2111SPBF.pdf
IR2111SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
27+2.72 EUR
35+2.09 EUR
37+1.97 EUR
95+1.94 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BC847PNH6327XTSA1 BC846PNH6327.pdf
BC847PNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
auf Bestellung 2125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
355+0.20 EUR
459+0.16 EUR
676+0.11 EUR
715+0.10 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BSP125H6327XTSA1 BSP125H6327XTSA1.pdf
BSP125H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Drain current: 0.12A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
Case: SOT223
Drain-source voltage: 600V
auf Bestellung 1072 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
88+0.81 EUR
153+0.47 EUR
162+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
BSD235NH6327XTSA1 BSD235NH6327XTSA1.pdf
BSD235NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.95A
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
305+0.23 EUR
371+0.19 EUR
463+0.15 EUR
589+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BSD840NH6327XTSA1 BSD840NH6327XTSA1.pdf
BSD840NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Case: SOT363
Drain-source voltage: 20V
Drain current: 0.88A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
auf Bestellung 4050 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
309+0.23 EUR
360+0.20 EUR
459+0.16 EUR
794+0.09 EUR
834+0.09 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1.pdf
BSS214NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
241+0.30 EUR
341+0.21 EUR
509+0.14 EUR
587+0.12 EUR
854+0.08 EUR
903+0.08 EUR
1000+0.08 EUR
3000+0.08 EUR
Mindestbestellmenge: 241
Im Einkaufswagen  Stück im Wert von  UAH
IRL2505PBF description irl2505pbf.pdf
IRL2505PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
35+2.04 EUR
47+1.53 EUR
50+1.46 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRL2505STRLPBF irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7201TRPBF description IRF7201TRPBF.pdf
IRF7201TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7205TRPBF description irf7205pbf.pdf
IRF7205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 3543 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
208+0.34 EUR
221+0.32 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N10S3L16ATMA1 Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Technology: OptiMOS® -T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Case: PG-TO252-3-11
Drain current: 38A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT150N10S5N035ATMA1 IAUT150N10S5N035.pdf
IAUT150N10S5N035ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N120H3FKSA1 IGW40N120H3-DTE.pdf
IGW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Collector current: 40A
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Gate-emitter voltage: ±20V
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.99 EUR
13+5.51 EUR
14+5.21 EUR
90+5.12 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N120R5XKSA1 IHW40N120R5.pdf
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Collector current: 40A
Technology: TRENCHSTOP™ RC
Turn-off time: 440ns
Gate-emitter voltage: ±20V
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.29 EUR
21+3.55 EUR
22+3.35 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKQ40N120CH3XKSA1 IKQ40N120CH3.pdf
IKQ40N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 76ns
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Manufacturer series: H3
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ40N120CT2XKSA1 IKQ40N120CT2.pdf
IKQ40N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™ 2
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120CS6XKSA1 IKW40N120CS6.pdf
IKW40N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™ 6
Gate-emitter voltage: ±20V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120H3FKSA1 IKW40N120H3-DTE.pdf
IKW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N120T2FKSA1 IKW40N120T2.pdf
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Pulsed collector current: 165A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.27 EUR
10+7.44 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKY40N120CH3XKSA1 IKY40N120CH3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-on time: 59ns
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Manufacturer series: H3
Technology: TRENCHSTOP™
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKY40N120CS6XKSA1 IKY40N120CS6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Technology: TRENCHSTOP™ 6
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC750 WATT MOTOR CONTROL KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD090N03LGATMA1 IPD090N03LG-DTE.pdf
IPD090N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
81+0.89 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
IRL2203NSTRLPBF irl2203nspbf.pdf
IRL2203NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT422PBF description pvt422.pdf
PVT422PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT422SPBF description pvt422.pdf
PVT422SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.21 EUR
8+9.27 EUR
9+8.75 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IGB20N65S5ATMA1 IGB20N65S5.pdf
IGB20N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 48nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 28A
Pulsed collector current: 80A
Turn-on time: 27ns
Turn-off time: 137ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N65R5XKSA1 IHW20N65R5.pdf
IHW20N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 20A
Pulsed collector current: 60A
Turn-off time: 257ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB20N65EH5ATMA1 IKB20N65EH5.pdf
IKB20N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 183ns
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
auf Bestellung 919 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.80 EUR
25+2.89 EUR
27+2.73 EUR
100+2.63 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
SPD50N03S207GBTMA1 SPD50N03S207G-DTE.pdf
SPD50N03S207GBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1452 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.70 EUR
107+0.67 EUR
112+0.64 EUR
114+0.63 EUR
117+0.61 EUR
500+0.60 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
BSC050N03LSGATMA1 BSC050N03LSG-DTE.pdf
BSC050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC050N03MSGATMA1 BSC050N03MSG-DTE.pdf
BSC050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03LSGATMA1 BSZ050N03LSG-DTE.pdf
BSZ050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ050N03MSGATMA1 BSZ050N03MSG-DTE.pdf
BSZ050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1646 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
73+0.99 EUR
115+0.62 EUR
122+0.59 EUR
1000+0.57 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
SPA11N80C3 description
SPA11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP11N80C3 SPP11N80C3-dte.pdf
SPP11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.80 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SPW11N80C3 description SPW11N80C3-DTE.pdf
SPW11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7101TRPBF irf7101pbf.pdf
IRF7101TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103TRPBF description irf7103pbf.pdf
IRF7103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 4228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.15 EUR
97+0.74 EUR
274+0.26 EUR
290+0.25 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
IRF7104TRPBF description irf7104pbf.pdf
IRF7104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7105TRPBF description irf7105pbf.pdf
IRF7105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7103QTR irf7103qpbf.pdf
AUIRF7103QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Power dissipation: 2.4W
Gate charge: 10nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 247 494 741 988 1235 1482 1729 1976 2223 2435 2436 2437 2438 2439 2440 2441 2442 2443 2444 2445 2470 2478  [ Nächste Seite >> ]