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IKD03N60RFATMA1 IKD03N60RFATMA1 INFINEON TECHNOLOGIES IKD03N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 6A
Pulsed collector current: 7.5A
Turn-on time: 17ns
Turn-off time: 265ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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SPU03N60C3BKMA1 SPU03N60C3BKMA1 INFINEON TECHNOLOGIES SP_03N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhancement
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IR2101PBF IR2101PBF INFINEON TECHNOLOGIES ir2101.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
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IR2101SPBF IR2101SPBF INFINEON TECHNOLOGIES IR2101SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
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IR2101STRPBF IR2101STRPBF INFINEON TECHNOLOGIES IR2101SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
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43+1.69 EUR
59+1.23 EUR
75+0.96 EUR
79+0.92 EUR
500+0.89 EUR
1000+0.87 EUR
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IRF7401TRPBF IRF7401TRPBF INFINEON TECHNOLOGIES irf7401pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF7403TRPBF IRF7403TRPBF INFINEON TECHNOLOGIES irf7403pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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IRF7404TRPBF IRF7404TRPBF INFINEON TECHNOLOGIES irf7404pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IR21531PBF IR21531PBF INFINEON TECHNOLOGIES ir21531.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1W
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
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26+2.83 EUR
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33+2.22 EUR
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IR21531SPBF IR21531SPBF INFINEON TECHNOLOGIES IR21531SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
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IR2153PBF IR2153PBF INFINEON TECHNOLOGIES ir2153.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1W
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
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IR2153SPBF IR2153SPBF INFINEON TECHNOLOGIES ir2153.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
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35+2.04 EUR
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49+1.49 EUR
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IR2153STRPBF IR2153STRPBF INFINEON TECHNOLOGIES IR2153DPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
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BTS740S2 BTS740S2 INFINEON TECHNOLOGIES BTS740S2.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 317 Stücke:
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7+10.31 EUR
13+5.51 EUR
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IRLL014NTRPBF IRLL014NTRPBF INFINEON TECHNOLOGIES irll014npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 55V
Drain current: 2A
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 1164 Stücke:
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90+0.80 EUR
128+0.56 EUR
159+0.45 EUR
260+0.28 EUR
275+0.26 EUR
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IRLL024NTRPBF IRLL024NTRPBF INFINEON TECHNOLOGIES irll024n.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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102+0.71 EUR
204+0.35 EUR
215+0.33 EUR
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IRLL024ZTRPBF IRLL024ZTRPBF INFINEON TECHNOLOGIES irll024zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2156 Stücke:
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73+0.99 EUR
104+0.69 EUR
133+0.54 EUR
141+0.51 EUR
143+0.50 EUR
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IRLZ24NPBF IRLZ24NPBF INFINEON TECHNOLOGIES Infineon-IRLZ24N-DataSheet-v01_01-EN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±16V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 10nC
On-state resistance: 60mΩ
auf Bestellung 343 Stücke:
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98+0.74 EUR
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BC850BE6327 BC850BE6327 INFINEON TECHNOLOGIES BC850BE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 9550 Stücke:
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334+0.21 EUR
468+0.15 EUR
711+0.10 EUR
837+0.09 EUR
1211+0.06 EUR
1283+0.06 EUR
9000+0.05 EUR
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BC850CE6327 BC850CE6327 INFINEON TECHNOLOGIES BC850BE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 598 Stücke:
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432+0.17 EUR
539+0.13 EUR
598+0.12 EUR
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IRFR9024NTRLPBF IRFR9024NTRLPBF INFINEON TECHNOLOGIES irfr9024npbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFR9024NTRPBF IRFR9024NTRPBF INFINEON TECHNOLOGIES irfr9024npbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 4977 Stücke:
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52+1.39 EUR
86+0.84 EUR
201+0.36 EUR
213+0.34 EUR
4000+0.33 EUR
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AUIRFR9024NTRL INFINEON TECHNOLOGIES INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Pulsed drain current: -44A
Produkt ist nicht verfügbar
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IRL3705NPBF IRL3705NPBF INFINEON TECHNOLOGIES irl3705n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Case: TO220AB
Drain-source voltage: 55V
Drain current: 89A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 65.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: THT
auf Bestellung 524 Stücke:
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40+1.83 EUR
52+1.40 EUR
95+0.76 EUR
99+0.73 EUR
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IRL3705NSTRLPBF IRL3705NSTRLPBF INFINEON TECHNOLOGIES irl3705nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRL3705ZSTRLPBF IRL3705ZSTRLPBF INFINEON TECHNOLOGIES IRL3705ZSTRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB3034PBF IRLB3034PBF INFINEON TECHNOLOGIES irlb3034pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 123 Stücke:
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16+4.58 EUR
26+2.80 EUR
28+2.65 EUR
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IRLB3036PBF IRLB3036PBF INFINEON TECHNOLOGIES irlb3036pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Drain-source voltage: 60V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 91nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: THT
Case: TO220AB
auf Bestellung 252 Stücke:
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15+4.95 EUR
21+3.49 EUR
22+3.30 EUR
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IRLB3813PBF IRLB3813PBF INFINEON TECHNOLOGIES irlb3813pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 880 Stücke:
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35+2.10 EUR
38+1.90 EUR
43+1.69 EUR
50+1.46 EUR
53+1.37 EUR
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IRLB4030PBF IRLB4030PBF INFINEON TECHNOLOGIES irlb4030pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4 Stücke:
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4+17.88 EUR
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IRLB4132PBF IRLB4132PBF INFINEON TECHNOLOGIES IRLB4132PbF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
81+0.88 EUR
129+0.55 EUR
137+0.52 EUR
500+0.51 EUR
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IRLB8314PBF IRLB8314PBF INFINEON TECHNOLOGIES irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 664A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 290 Stücke:
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84+0.86 EUR
130+0.55 EUR
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IRLB8721PBF IRLB8721PBF INFINEON TECHNOLOGIES irlb8721pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 7.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 719 Stücke:
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49+1.49 EUR
90+0.80 EUR
135+0.53 EUR
143+0.50 EUR
250+0.48 EUR
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IRLB8748PBF IRLB8748PBF INFINEON TECHNOLOGIES irlb8748pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 276 Stücke:
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47+1.53 EUR
68+1.06 EUR
75+0.95 EUR
140+0.51 EUR
148+0.48 EUR
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IRF7303TRPBF IRF7303TRPBF INFINEON TECHNOLOGIES irf7303pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7306TRPBF IRF7306TRPBF INFINEON TECHNOLOGIES irf7306pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 894 Stücke:
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76+0.94 EUR
111+0.65 EUR
167+0.43 EUR
177+0.41 EUR
250+0.40 EUR
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IRF7309TRPBF IRF7309TRPBF INFINEON TECHNOLOGIES irf7309pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 282 Stücke:
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90+0.80 EUR
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AUIRF7309QTR AUIRF7309QTR INFINEON TECHNOLOGIES auirf7309q.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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IRLR2905ZTRPBF IRLR2905ZTRPBF INFINEON TECHNOLOGIES IRLR2905ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 891 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
76+0.94 EUR
85+0.85 EUR
149+0.48 EUR
158+0.45 EUR
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AUIRLR2905ZTRL INFINEON TECHNOLOGIES AUIRLR2905Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
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IRFR7540TRPBF IRFR7540TRPBF INFINEON TECHNOLOGIES IRFR7540TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGW15N120H3FKSA1 IGW15N120H3FKSA1 INFINEON TECHNOLOGIES IGW15N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 217W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 42 Stücke:
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12+6.15 EUR
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IHW15N120E1XKSA1 IHW15N120E1XKSA1 INFINEON TECHNOLOGIES IHW15N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Mounting: THT
Pulsed collector current: 45A
Turn-on time: 1940ns
Turn-off time: 1450ns
Type of transistor: IGBT
Power dissipation: 62.2W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 15A
auf Bestellung 19 Stücke:
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16+4.76 EUR
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IHW15N120R3FKSA1 IHW15N120R3FKSA1 INFINEON TECHNOLOGIES IHW15N120R3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Mounting: THT
Pulsed collector current: 45A
Turn-off time: 346ns
Type of transistor: IGBT
Power dissipation: 127W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 165nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 15A
auf Bestellung 67 Stücke:
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14+5.38 EUR
28+2.62 EUR
29+2.47 EUR
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IKW15N120BH6XKSA1 IKW15N120BH6XKSA1 INFINEON TECHNOLOGIES IKW15N120BH6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Type of transistor: IGBT
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 15A
Produkt ist nicht verfügbar
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IKW15N120T2FKSA1 IKW15N120T2FKSA1 INFINEON TECHNOLOGIES IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Turn-on time: 57ns
Turn-off time: 457ns
Type of transistor: IGBT
Power dissipation: 235W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 93nC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 48 Stücke:
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10+7.68 EUR
17+4.29 EUR
18+4.05 EUR
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IRLML6344TRPBF IRLML6344TRPBF INFINEON TECHNOLOGIES irlml6344pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 23946 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
272+0.26 EUR
368+0.19 EUR
400+0.18 EUR
424+0.17 EUR
633+0.11 EUR
Mindestbestellmenge: 193
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IRLML0060TRPBF IRLML0060TRPBF INFINEON TECHNOLOGIES irlml0060pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4353 Stücke:
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120+0.60 EUR
185+0.39 EUR
247+0.29 EUR
278+0.26 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 120
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IGW75N65H5XKSA1 IGW75N65H5XKSA1 INFINEON TECHNOLOGIES IGW75N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Gate charge: 160nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
auf Bestellung 24 Stücke:
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10+7.76 EUR
16+4.50 EUR
17+4.26 EUR
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IGZ75N65H5XKSA1 IGZ75N65H5XKSA1 INFINEON TECHNOLOGIES IGZ75N65H5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Gate charge: 166nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 37ns
Turn-off time: 415ns
Produkt ist nicht verfügbar
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IKW75N65EH5XKSA1 IKW75N65EH5XKSA1 INFINEON TECHNOLOGIES IKW75N65EH5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 160nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
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IKW75N65ES5XKSA1 IKW75N65ES5XKSA1 INFINEON TECHNOLOGIES IKW75N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 164nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Turn-on time: 86ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
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IKZ75N65EL5XKSA1 IKZ75N65EL5XKSA1 INFINEON TECHNOLOGIES IKZ75N65EL5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 268W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 436nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Turn-on time: 143ns
Turn-off time: 325ns
Produkt ist nicht verfügbar
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IKZ75N65ES5XKSA1 IKZ75N65ES5XKSA1 INFINEON TECHNOLOGIES IKZ75N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 164nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Turn-on time: 71ns
Turn-off time: 427ns
Produkt ist nicht verfügbar
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SPW35N60CFD SPW35N60CFD INFINEON TECHNOLOGIES SPW35N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF540ZPBF IRF540ZPBF INFINEON TECHNOLOGIES irf540z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
59+1.23 EUR
104+0.69 EUR
110+0.65 EUR
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AUIRF540Z AUIRF540Z INFINEON TECHNOLOGIES auirf540z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.11 EUR
Mindestbestellmenge: 14
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IRFB3306PBF IRFB3306PBF INFINEON TECHNOLOGIES irfs3306pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Case: TO220AB
Mounting: THT
Power dissipation: 230W
Polarisation: unipolar
Drain current: 160A
Gate charge: 85nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
45+1.60 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 39
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IGW40T120FKSA1 IGW40T120FKSA1 INFINEON TECHNOLOGIES IGW40T120.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.99 EUR
11+6.51 EUR
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IKW40T120FKSA1 IKW40T120FKSA1 INFINEON TECHNOLOGIES IKW40T120FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.21 EUR
12+5.99 EUR
13+5.66 EUR
30+5.59 EUR
Mindestbestellmenge: 10
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IKD03N60RFATMA1 IKD03N60RF.pdf
IKD03N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 6A
Pulsed collector current: 7.5A
Turn-on time: 17ns
Turn-off time: 265ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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SPU03N60C3BKMA1 SP_03N60C3.pdf
SPU03N60C3BKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2101PBF description ir2101.pdf
IR2101PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
32+2.26 EUR
34+2.14 EUR
Mindestbestellmenge: 19
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IR2101SPBF description IR2101SPBF.pdf
IR2101SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IR2101STRPBF description IR2101SPBF.pdf
IR2101STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 2119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
59+1.23 EUR
75+0.96 EUR
79+0.92 EUR
500+0.89 EUR
1000+0.87 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF7401TRPBF description irf7401pbf.pdf
IRF7401TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7403TRPBF irf7403pbf.pdf
IRF7403TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7404TRPBF description irf7404pbf.pdf
IRF7404TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IR21531PBF description ir21531.pdf
IR21531PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1W
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
auf Bestellung 663 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.13 EUR
26+2.83 EUR
31+2.35 EUR
33+2.22 EUR
250+2.13 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IR21531SPBF description IR21531SPBF.pdf
IR21531SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
Produkt ist nicht verfügbar
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IR2153PBF description ir2153.pdf
IR2153PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Power: 1W
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
39+1.87 EUR
54+1.34 EUR
57+1.26 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IR2153SPBF description ir2153.pdf
IR2153SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.30 EUR
35+2.04 EUR
46+1.57 EUR
49+1.49 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IR2153STRPBF description IR2153DPBF.pdf
IR2153STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS740S2 description BTS740S2.pdf
BTS740S2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.31 EUR
13+5.51 EUR
Mindestbestellmenge: 7
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IRLL014NTRPBF description irll014npbf.pdf
IRLL014NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 55V
Drain current: 2A
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 1164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.80 EUR
128+0.56 EUR
159+0.45 EUR
260+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF description irll024n.pdf
IRLL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1417 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1.00 EUR
102+0.71 EUR
204+0.35 EUR
215+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024ZTRPBF irll024zpbf.pdf
IRLL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
104+0.69 EUR
133+0.54 EUR
141+0.51 EUR
143+0.50 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ24NPBF Infineon-IRLZ24N-DataSheet-v01_01-EN.pdf
IRLZ24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 18A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 18A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±16V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 10nC
On-state resistance: 60mΩ
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
98+0.74 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
BC850BE6327 BC850BE6327.pdf
BC850BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 9550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
468+0.15 EUR
711+0.10 EUR
837+0.09 EUR
1211+0.06 EUR
1283+0.06 EUR
9000+0.05 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BC850CE6327 BC850BE6327.pdf
BC850CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.20 EUR
432+0.17 EUR
539+0.13 EUR
598+0.12 EUR
Mindestbestellmenge: 358
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IRFR9024NTRLPBF irfr9024npbf.pdf
IRFR9024NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024NTRPBF description irfr9024npbf.pdf
IRFR9024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 4977 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
86+0.84 EUR
201+0.36 EUR
213+0.34 EUR
4000+0.33 EUR
Mindestbestellmenge: 52
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AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Pulsed drain current: -44A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705NPBF description irl3705n.pdf
IRL3705NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Case: TO220AB
Drain-source voltage: 55V
Drain current: 89A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 65.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: THT
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
52+1.40 EUR
95+0.76 EUR
99+0.73 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705NSTRLPBF irl3705nspbf.pdf
IRL3705NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705ZSTRLPBF IRL3705ZSTRLPBF.pdf
IRL3705ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3034PBF irlb3034pbf.pdf
IRLB3034PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.58 EUR
26+2.80 EUR
28+2.65 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3036PBF irlb3036pbf.pdf
IRLB3036PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Drain-source voltage: 60V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 91nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Mounting: THT
Case: TO220AB
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.95 EUR
21+3.49 EUR
22+3.30 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3813PBF irlb3813pbf.pdf
IRLB3813PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.10 EUR
38+1.90 EUR
43+1.69 EUR
50+1.46 EUR
53+1.37 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRLB4030PBF irlb4030pbf.pdf
IRLB4030PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRLB4132PBF IRLB4132PbF.pdf
IRLB4132PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
81+0.88 EUR
129+0.55 EUR
137+0.52 EUR
500+0.51 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRLB8314PBF irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f
IRLB8314PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 664A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
84+0.86 EUR
130+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRLB8721PBF description irlb8721pbf.pdf
IRLB8721PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 7.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 719 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
90+0.80 EUR
135+0.53 EUR
143+0.50 EUR
250+0.48 EUR
Mindestbestellmenge: 49
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IRLB8748PBF irlb8748pbf.pdf
IRLB8748PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
68+1.06 EUR
75+0.95 EUR
140+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 47
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IRF7303TRPBF irf7303pbf.pdf
IRF7303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7306TRPBF description irf7306pbf.pdf
IRF7306TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 894 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
111+0.65 EUR
167+0.43 EUR
177+0.41 EUR
250+0.40 EUR
Mindestbestellmenge: 76
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IRF7309TRPBF description irf7309pbf.pdf
IRF7309TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
90+0.80 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 74
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AUIRF7309QTR auirf7309q.pdf
AUIRF7309QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/100mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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IRLR2905ZTRPBF IRLR2905ZTRPBF.pdf
IRLR2905ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 891 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
76+0.94 EUR
85+0.85 EUR
149+0.48 EUR
158+0.45 EUR
Mindestbestellmenge: 50
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AUIRLR2905ZTRL AUIRLR2905Z.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR7540TRPBF IRFR7540TRPBF.pdf
IRFR7540TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGW15N120H3FKSA1 IGW15N120H3-DTE.pdf
IGW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Type of transistor: IGBT
Power dissipation: 217W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.15 EUR
21+3.47 EUR
22+3.29 EUR
Mindestbestellmenge: 12
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IHW15N120E1XKSA1 IHW15N120E1.pdf
IHW15N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Mounting: THT
Pulsed collector current: 45A
Turn-on time: 1940ns
Turn-off time: 1450ns
Type of transistor: IGBT
Power dissipation: 62.2W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 15A
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.76 EUR
19+3.76 EUR
Mindestbestellmenge: 16
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IHW15N120R3FKSA1 IHW15N120R3.pdf
IHW15N120R3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Mounting: THT
Pulsed collector current: 45A
Turn-off time: 346ns
Type of transistor: IGBT
Power dissipation: 127W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 165nC
Technology: TRENCHSTOP™ RC
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 15A
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.38 EUR
28+2.62 EUR
29+2.47 EUR
Mindestbestellmenge: 14
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IKW15N120BH6XKSA1 IKW15N120BH6.pdf
IKW15N120BH6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Type of transistor: IGBT
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 92nC
Technology: TRENCHSTOP™ 6
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 15A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120T2FKSA1 IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd
IKW15N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Turn-on time: 57ns
Turn-off time: 457ns
Type of transistor: IGBT
Power dissipation: 235W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 93nC
Technology: TRENCHSTOP™ 2
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.68 EUR
17+4.29 EUR
18+4.05 EUR
Mindestbestellmenge: 10
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IRLML6344TRPBF irlml6344pbf.pdf
IRLML6344TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 23946 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
272+0.26 EUR
368+0.19 EUR
400+0.18 EUR
424+0.17 EUR
633+0.11 EUR
Mindestbestellmenge: 193
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IRLML0060TRPBF irlml0060pbf.pdf
IRLML0060TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4353 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.60 EUR
185+0.39 EUR
247+0.29 EUR
278+0.26 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 120
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IGW75N65H5XKSA1 IGW75N65H5.pdf
IGW75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Gate charge: 160nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.76 EUR
16+4.50 EUR
17+4.26 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGZ75N65H5XKSA1 IGZ75N65H5XKSA1-DTE.pdf
IGZ75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Gate charge: 166nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 37ns
Turn-off time: 415ns
Produkt ist nicht verfügbar
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IKW75N65EH5XKSA1 IKW75N65EH5.pdf
IKW75N65EH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 198W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 160nC
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 61ns
Turn-off time: 215ns
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65ES5XKSA1 IKW75N65ES5.pdf
IKW75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 164nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Turn-on time: 86ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
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IKZ75N65EL5XKSA1 IKZ75N65EL5.pdf
IKZ75N65EL5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 268W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 436nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 300A
Turn-on time: 143ns
Turn-off time: 325ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKZ75N65ES5XKSA1 IKZ75N65ES5.pdf
IKZ75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 197W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 164nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Turn-on time: 71ns
Turn-off time: 427ns
Produkt ist nicht verfügbar
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SPW35N60CFD SPW35N60CFD.pdf
SPW35N60CFD
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF540ZPBF description irf540z.pdf
IRF540ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
59+1.23 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF540Z auirf540z.pdf
AUIRF540Z
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3306PBF irfs3306pbf.pdf
IRFB3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Case: TO220AB
Mounting: THT
Power dissipation: 230W
Polarisation: unipolar
Drain current: 160A
Gate charge: 85nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 60V
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
45+1.60 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 39
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IGW40T120FKSA1 IGW40T120.pdf
IGW40T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.99 EUR
11+6.51 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IKW40T120FKSA1 IKW40T120FKSA1.pdf
IKW40T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 700ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.21 EUR
12+5.99 EUR
13+5.66 EUR
30+5.59 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
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