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AUIRF1404STRL AUIRF1404STRL INFINEON TECHNOLOGIES auirf1404s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRF1404ZSTRL AUIRF1404ZSTRL INFINEON TECHNOLOGIES auirf1404z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4905LHALA1 TLE4905LHALA1 INFINEON TECHNOLOGIES TLE49x5L.PDF Category: Hall Sensors
Description: Sensor: Hall; unipolar; P-SSO-3-2; 5÷18mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: unipolar
Case: P-SSO-3-2
Range of detectable magnetic field: 5...18mT
Supply voltage: 3.8...24V DC
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 2 Stücke:
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2+35.75 EUR
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TLE4945L TLE4945L INFINEON TECHNOLOGIES TLE49x5L.PDF Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Kind of sensor: bipolar
Mounting: THT
auf Bestellung 146 Stücke:
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47+1.54 EUR
50+1.44 EUR
66+1.09 EUR
70+1.03 EUR
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IRL1404ZPBF IRL1404ZPBF INFINEON TECHNOLOGIES irl1404zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Case: TO220AB
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 75nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 790A
Mounting: THT
auf Bestellung 2 Stücke:
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2+35.75 EUR
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IRL1404ZSTRLPBF IRL1404ZSTRLPBF INFINEON TECHNOLOGIES irl1404xxPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Gate charge: 75nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 790A
Mounting: SMD
auf Bestellung 658 Stücke:
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27+2.70 EUR
37+1.96 EUR
55+1.32 EUR
58+1.24 EUR
500+1.20 EUR
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IRF520NPBF IRF520NPBF INFINEON TECHNOLOGIES irf520n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
auf Bestellung 592 Stücke:
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76+0.94 EUR
128+0.56 EUR
144+0.50 EUR
175+0.41 EUR
184+0.39 EUR
500+0.38 EUR
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IRF540NPBF IRF540NPBF INFINEON TECHNOLOGIES irf540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 47.3nC
Gate-source voltage: ±20V
On-state resistance: 44mΩ
auf Bestellung 3138 Stücke:
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59+1.22 EUR
73+0.98 EUR
91+0.79 EUR
138+0.52 EUR
146+0.49 EUR
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IGP20N65F5XKSA1 IGP20N65F5XKSA1 INFINEON TECHNOLOGIES IGP20N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 42A
auf Bestellung 183 Stücke:
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21+3.52 EUR
35+2.06 EUR
37+1.96 EUR
100+1.87 EUR
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IGP20N65H5XKSA1 IGP20N65H5XKSA1 INFINEON TECHNOLOGIES IGP20N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 21A
Pulsed collector current: 60A
Turn-on time: 26ns
Turn-off time: 169ns
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IKP20N65F5XKSA1 IKP20N65F5XKSA1 INFINEON TECHNOLOGIES IKP20N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 21A
Pulsed collector current: 60A
Turn-on time: 21ns
Turn-off time: 200ns
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IKP20N65H5XKSA1 IKP20N65H5XKSA1 INFINEON TECHNOLOGIES IKP20N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 77 Stücke:
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25+2.92 EUR
27+2.72 EUR
32+2.25 EUR
34+2.12 EUR
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SPP20N60CFD SPP20N60CFD INFINEON TECHNOLOGIES SPP20N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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SPP20N60S5 SPP20N60S5 INFINEON TECHNOLOGIES SPP20N60S5.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.69 EUR
18+4.20 EUR
23+3.25 EUR
24+3.07 EUR
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SPP20N65C3 SPP20N65C3 INFINEON TECHNOLOGIES SPx20N65C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
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10+7.65 EUR
11+6.89 EUR
14+5.28 EUR
15+4.98 EUR
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IRF3205PBF IRF3205PBF INFINEON TECHNOLOGIES irf3205.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 146nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Drain-source voltage: 55V
Drain current: 80A
On-state resistance: 8mΩ
auf Bestellung 644 Stücke:
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50+1.43 EUR
60+1.20 EUR
122+0.59 EUR
129+0.56 EUR
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IRF3205STRLPBF IRF3205STRLPBF INFINEON TECHNOLOGIES irf3205spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 281 Stücke:
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28+2.57 EUR
40+1.79 EUR
91+0.79 EUR
97+0.74 EUR
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IRF3205STRRPBF IRF3205STRRPBF INFINEON TECHNOLOGIES irf3205spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF3205ZPBF IRF3205ZPBF INFINEON TECHNOLOGIES irf3205zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 273 Stücke:
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42+1.72 EUR
62+1.16 EUR
72+1.00 EUR
76+0.94 EUR
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IRF3205ZSTRLPBF IRF3205ZSTRLPBF INFINEON TECHNOLOGIES irf3205zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Pulsed drain current: 440A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 801 Stücke:
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28+2.57 EUR
40+1.80 EUR
82+0.87 EUR
88+0.82 EUR
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AUIRF3205Z AUIRF3205Z INFINEON TECHNOLOGIES auirf3205z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2N7002DWH6327XTSA1 2N7002DWH6327XTSA1 INFINEON TECHNOLOGIES 2N7002DWH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2667 Stücke:
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243+0.29 EUR
323+0.22 EUR
483+0.15 EUR
564+0.13 EUR
1454+0.05 EUR
1539+0.05 EUR
Mindestbestellmenge: 243
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IRF2804STRL7PP IRF2804STRL7PP INFINEON TECHNOLOGIES irf2804s-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPW47N65C3FKSA1 SPW47N65C3FKSA1 INFINEON TECHNOLOGIES SPW47N65C3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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BCR135E6327 BCR135E6327 INFINEON TECHNOLOGIES bcr135.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Case: SOT23
Mounting: SMD
Power dissipation: 0.2W
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
955+0.08 EUR
1064+0.07 EUR
1389+0.05 EUR
1471+0.05 EUR
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BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 INFINEON TECHNOLOGIES BAT62E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 20mA; 100mW
Case: SC79
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Power dissipation: 0.1W
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 2777 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
187+0.38 EUR
242+0.30 EUR
300+0.24 EUR
394+0.18 EUR
417+0.17 EUR
Mindestbestellmenge: 129
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IRLML2244TRPBF IRLML2244TRPBF INFINEON TECHNOLOGIES irlml2244pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 11442 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
407+0.18 EUR
516+0.14 EUR
827+0.09 EUR
875+0.08 EUR
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BAV70E6327HTSA1 BAV70E6327HTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 3559 Stücke:
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397+0.18 EUR
589+0.12 EUR
763+0.09 EUR
903+0.08 EUR
1060+0.07 EUR
1525+0.05 EUR
1608+0.04 EUR
Mindestbestellmenge: 397
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IRF4905LPBF IRF4905LPBF INFINEON TECHNOLOGIES irf4905spbf.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
Technology: HEXFET®
Mounting: THT
Case: TO262
Drain-source voltage: -55V
Drain current: -74A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 80 Stücke:
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26+2.85 EUR
35+2.10 EUR
43+1.67 EUR
46+1.59 EUR
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IRF4905PBF IRF4905PBF INFINEON TECHNOLOGIES irf4905.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB
Technology: HEXFET®
Mounting: THT
Case: TO220AB
Drain-source voltage: -55V
Drain current: -74A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4808 Stücke:
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22+3.37 EUR
28+2.56 EUR
70+1.03 EUR
74+0.97 EUR
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IRF4905STRLPBF IRF4905STRLPBF INFINEON TECHNOLOGIES IRF4905STRLPBF.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Technology: HEXFET®
Mounting: SMD
Case: D2PAK
Drain-source voltage: -55V
Drain current: -74A
Type of transistor: P-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2254 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.99 EUR
26+2.80 EUR
45+1.60 EUR
48+1.52 EUR
1600+1.44 EUR
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IRF4905STRRPBF INFINEON TECHNOLOGIES irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK
Technology: HEXFET®
Mounting: SMD
Case: D2PAK
Drain-source voltage: -55V
Drain current: -44A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -280A
Produkt ist nicht verfügbar
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AUIRF4905S AUIRF4905S INFINEON TECHNOLOGIES auirf4905s.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; 170W; D2PAK
Technology: HEXFET®
Mounting: SMD
Case: D2PAK
Drain-source voltage: -55V
Drain current: -44A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IGW25N120H3FKSA1 IGW25N120H3FKSA1 INFINEON TECHNOLOGIES IGW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES IHW25N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.46 EUR
27+2.67 EUR
29+2.53 EUR
120+2.43 EUR
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IKW25N120T2FKSA1 IKW25N120T2FKSA1 INFINEON TECHNOLOGIES IKW25N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.64 EUR
13+5.81 EUR
14+5.49 EUR
Mindestbestellmenge: 8
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IRF9530NPBF IRF9530NPBF INFINEON TECHNOLOGIES irf9530n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: -100V
Drain current: -14A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Gate charge: 38.7nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IKW40N60H3FKSA1 IKW40N60H3FKSA1 INFINEON TECHNOLOGIES IKW40N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 218ns
Collector-emitter voltage: 600V
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
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BSS138NH6327XTSA2 BSS138NH6327XTSA2 INFINEON TECHNOLOGIES BSS138NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 8374 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
365+0.20 EUR
593+0.12 EUR
721+0.10 EUR
1544+0.05 EUR
1629+0.04 EUR
Mindestbestellmenge: 218
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BSS138NH6433XTMA1 BSS138NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 0.92A
Technology: SIPMOS®
Produkt ist nicht verfügbar
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BSC032N04LSATMA1 BSC032N04LSATMA1 INFINEON TECHNOLOGIES BSC032N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 83A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
auf Bestellung 1274 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
59+1.23 EUR
73+0.99 EUR
77+0.93 EUR
500+0.92 EUR
Mindestbestellmenge: 53
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BSC034N06NSATMA1 BSC034N06NSATMA1 INFINEON TECHNOLOGIES BSC034N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IGW40N60H3FKSA1 IGW40N60H3FKSA1 INFINEON TECHNOLOGIES IGW40N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.11 EUR
19+3.78 EUR
20+3.58 EUR
120+3.43 EUR
Mindestbestellmenge: 15
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IHW40N60RFKSA1 IHW40N60RFKSA1 INFINEON TECHNOLOGIES IHW40N60RF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 217ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IKFW40N60DH3EXKSA1 IKFW40N60DH3EXKSA1 INFINEON TECHNOLOGIES IKFW40N60DH3E.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 90A
Turn-on time: 52ns
Turn-off time: 160ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGP15N60TXKSA1 IGP15N60TXKSA1 INFINEON TECHNOLOGIES IGP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Type of transistor: IGBT
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 23A
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IRL540NSTRLPBF IRL540NSTRLPBF INFINEON TECHNOLOGIES irl540nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
36+1.99 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 31
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IRFB3206GPBF IRFB3206GPBF INFINEON TECHNOLOGIES irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
28+2.63 EUR
32+2.23 EUR
Mindestbestellmenge: 19
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IRFB3206PBF IRFB3206PBF INFINEON TECHNOLOGIES irfs3206pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLMS6802TRPBF IRLMS6802TRPBF INFINEON TECHNOLOGIES irlms6802pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB8743PBF IRLB8743PBF INFINEON TECHNOLOGIES irlb8743pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
65+1.12 EUR
73+0.99 EUR
85+0.84 EUR
90+0.80 EUR
Mindestbestellmenge: 59
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IKW15N120H3FKSA1 IKW15N120H3FKSA1 INFINEON TECHNOLOGIES IKW15N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Case: TO247-3
Mounting: THT
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 75nC
Technology: TRENCHSTOP™ 3
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.69 EUR
16+4.62 EUR
17+4.38 EUR
60+4.20 EUR
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IRLML6401TRPBF IRLML6401TRPBF INFINEON TECHNOLOGIES irlml6401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 10571 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
261+0.27 EUR
350+0.20 EUR
394+0.18 EUR
878+0.08 EUR
926+0.08 EUR
Mindestbestellmenge: 152
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BC847CE6327HTSA1 BC847CE6327HTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
141+0.50 EUR
Mindestbestellmenge: 141
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IRFB3607PBF IRFB3607PBF INFINEON TECHNOLOGIES irfs3607pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
108+0.67 EUR
114+0.63 EUR
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BC857CE6327 BC857CE6327 INFINEON TECHNOLOGIES BC857SH6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.20 EUR
486+0.15 EUR
750+0.10 EUR
795+0.09 EUR
Mindestbestellmenge: 358
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TLE42712GATMA1 TLE42712GATMA1 INFINEON TECHNOLOGIES TLE4271-2G.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 6...40V
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.96 EUR
31+2.32 EUR
33+2.19 EUR
100+2.12 EUR
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BC847BE6327HTSA1 BC847BE6327HTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
496+0.14 EUR
729+0.10 EUR
Mindestbestellmenge: 295
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BC847BE6433HTMA1 BC847BE6433HTMA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2540 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
714+0.10 EUR
1563+0.05 EUR
1651+0.04 EUR
Mindestbestellmenge: 500
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BAT5406WH6327XTSA1 BAT5406WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 230mW
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.49 EUR
Mindestbestellmenge: 48
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AUIRF1404STRL auirf1404s.pdf
AUIRF1404STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 162A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF1404ZSTRL auirf1404z.pdf
AUIRF1404ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4905LHALA1 TLE49x5L.PDF
TLE4905LHALA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; P-SSO-3-2; 5÷18mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: unipolar
Case: P-SSO-3-2
Range of detectable magnetic field: 5...18mT
Supply voltage: 3.8...24V DC
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
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TLE4945L TLE49x5L.PDF
TLE4945L
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-SSO-3-2; -10÷10mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -10...10mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Kind of sensor: bipolar
Mounting: THT
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
50+1.44 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 47
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IRL1404ZPBF irl1404zpbf.pdf
IRL1404ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Case: TO220AB
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 75nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 790A
Mounting: THT
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IRL1404ZSTRLPBF irl1404xxPBF.pdf
IRL1404ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Gate charge: 75nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 790A
Mounting: SMD
auf Bestellung 658 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.70 EUR
37+1.96 EUR
55+1.32 EUR
58+1.24 EUR
500+1.20 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IRF520NPBF irf520n.pdf
IRF520NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.7A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Power dissipation: 48W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
auf Bestellung 592 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
128+0.56 EUR
144+0.50 EUR
175+0.41 EUR
184+0.39 EUR
500+0.38 EUR
Mindestbestellmenge: 76
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IRF540NPBF irf540n.pdf
IRF540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 140W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 47.3nC
Gate-source voltage: ±20V
On-state resistance: 44mΩ
auf Bestellung 3138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
73+0.98 EUR
91+0.79 EUR
138+0.52 EUR
146+0.49 EUR
Mindestbestellmenge: 59
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IGP20N65F5XKSA1 IGP20N65F5-DTE.pdf
IGP20N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 42A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 42A
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
35+2.06 EUR
37+1.96 EUR
100+1.87 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IGP20N65H5XKSA1 IGP20N65H5.pdf
IGP20N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 21A
Pulsed collector current: 60A
Turn-on time: 26ns
Turn-off time: 169ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65F5XKSA1 IKP20N65F5.pdf
IKP20N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 21A; 63W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 63W
Case: TO220-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 21A
Pulsed collector current: 60A
Turn-on time: 21ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP20N65H5XKSA1 IKP20N65H5-DTE.pdf
IKP20N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 125W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
27+2.72 EUR
32+2.25 EUR
34+2.12 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
SPP20N60CFD SPP20N60CFD.pdf
SPP20N60CFD
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP20N60S5 description SPP20N60S5.pdf
SPP20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
18+4.20 EUR
23+3.25 EUR
24+3.07 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SPP20N65C3 SPx20N65C3.pdf
SPP20N65C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.65 EUR
11+6.89 EUR
14+5.28 EUR
15+4.98 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205PBF irf3205.pdf
IRF3205PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 200W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 146nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Drain-source voltage: 55V
Drain current: 80A
On-state resistance: 8mΩ
auf Bestellung 644 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
60+1.20 EUR
122+0.59 EUR
129+0.56 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205STRLPBF irf3205spbf.pdf
IRF3205STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
40+1.79 EUR
91+0.79 EUR
97+0.74 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205STRRPBF irf3205spbf.pdf
IRF3205STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205ZPBF description irf3205zpbf.pdf
IRF3205ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
62+1.16 EUR
72+1.00 EUR
76+0.94 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205ZSTRLPBF irf3205zpbf.pdf
IRF3205ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; Idm: 440A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Pulsed drain current: 440A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 801 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
40+1.80 EUR
82+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF3205Z auirf3205z.pdf
AUIRF3205Z
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWH6327XTSA1 2N7002DWH6327XTSA1.pdf
2N7002DWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
243+0.29 EUR
323+0.22 EUR
483+0.15 EUR
564+0.13 EUR
1454+0.05 EUR
1539+0.05 EUR
Mindestbestellmenge: 243
Im Einkaufswagen  Stück im Wert von  UAH
IRF2804STRL7PP irf2804s-7ppbf.pdf
IRF2804STRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPW47N65C3FKSA1 SPW47N65C3F.pdf
SPW47N65C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR135E6327 bcr135.pdf
BCR135E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Case: SOT23
Mounting: SMD
Power dissipation: 0.2W
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
955+0.08 EUR
1064+0.07 EUR
1389+0.05 EUR
1471+0.05 EUR
Mindestbestellmenge: 955
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BAT6202VH6327XTSA1 BAT62E6327HTSA1.pdf
BAT6202VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 20mA; 100mW
Case: SC79
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Power dissipation: 0.1W
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 2777 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
187+0.38 EUR
242+0.30 EUR
300+0.24 EUR
394+0.18 EUR
417+0.17 EUR
Mindestbestellmenge: 129
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IRLML2244TRPBF irlml2244pbf.pdf
IRLML2244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 11442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
407+0.18 EUR
516+0.14 EUR
827+0.09 EUR
875+0.08 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BAV70E6327HTSA1 BAV70E6327HTSA1.pdf
BAV70E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 3559 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
397+0.18 EUR
589+0.12 EUR
763+0.09 EUR
903+0.08 EUR
1060+0.07 EUR
1525+0.05 EUR
1608+0.04 EUR
Mindestbestellmenge: 397
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IRF4905LPBF description irf4905spbf.pdf
IRF4905LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
Technology: HEXFET®
Mounting: THT
Case: TO262
Drain-source voltage: -55V
Drain current: -74A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
35+2.10 EUR
43+1.67 EUR
46+1.59 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRF4905PBF irf4905.pdf
IRF4905PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB
Technology: HEXFET®
Mounting: THT
Case: TO220AB
Drain-source voltage: -55V
Drain current: -74A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4808 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
28+2.56 EUR
70+1.03 EUR
74+0.97 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRF4905STRLPBF description IRF4905STRLPBF.pdf
IRF4905STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Technology: HEXFET®
Mounting: SMD
Case: D2PAK
Drain-source voltage: -55V
Drain current: -74A
Type of transistor: P-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.99 EUR
26+2.80 EUR
45+1.60 EUR
48+1.52 EUR
1600+1.44 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRF4905STRRPBF irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK
Technology: HEXFET®
Mounting: SMD
Case: D2PAK
Drain-source voltage: -55V
Drain current: -44A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -280A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4905S auirf4905s.pdf
AUIRF4905S
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; 170W; D2PAK
Technology: HEXFET®
Mounting: SMD
Case: D2PAK
Drain-source voltage: -55V
Drain current: -44A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW25N120H3FKSA1 IGW25N120H3-DTE.pdf
IGW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IHW25N120E1XKSA1 IHW25N120E1.pdf
IHW25N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.46 EUR
27+2.67 EUR
29+2.53 EUR
120+2.43 EUR
Mindestbestellmenge: 14
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IKW25N120T2FKSA1 IKW25N120T2.pdf
IKW25N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.64 EUR
13+5.81 EUR
14+5.49 EUR
Mindestbestellmenge: 8
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IRF9530NPBF irf9530n.pdf
IRF9530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: -100V
Drain current: -14A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Gate charge: 38.7nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IKW40N60H3FKSA1 IKW40N60H3.pdf
IKW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 218ns
Collector-emitter voltage: 600V
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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BSS138NH6327XTSA2 BSS138NH6327XTSA2.pdf
BSS138NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 8374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
365+0.20 EUR
593+0.12 EUR
721+0.10 EUR
1544+0.05 EUR
1629+0.04 EUR
Mindestbestellmenge: 218
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BSS138NH6433XTMA1 Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb
BSS138NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 0.92A
Technology: SIPMOS®
Produkt ist nicht verfügbar
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BSC032N04LSATMA1 BSC032N04LS-DTE.pdf
BSC032N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 83A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
auf Bestellung 1274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
59+1.23 EUR
73+0.99 EUR
77+0.93 EUR
500+0.92 EUR
Mindestbestellmenge: 53
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BSC034N06NSATMA1 BSC034N06NS-DTE.pdf
BSC034N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N60H3FKSA1 IGW40N60H3-DTE.pdf
IGW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.11 EUR
19+3.78 EUR
20+3.58 EUR
120+3.43 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N60RFKSA1 IHW40N60RF.pdf
IHW40N60RFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Turn-off time: 217ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IKFW40N60DH3EXKSA1 IKFW40N60DH3E.pdf
IKFW40N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 28A
Pulsed collector current: 90A
Turn-on time: 52ns
Turn-off time: 160ns
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP15N60TXKSA1 IGP15N60T-DTE.pdf
IGP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Type of transistor: IGBT
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 23A
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL540NSTRLPBF irl540nspbf.pdf
IRL540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
36+1.99 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3206GPBF irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5
IRFB3206GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
28+2.63 EUR
32+2.23 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3206PBF irfs3206pbf.pdf
IRFB3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS6802TRPBF irlms6802pbf.pdf
IRLMS6802TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLB8743PBF irlb8743pbf.pdf
IRLB8743PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
65+1.12 EUR
73+0.99 EUR
85+0.84 EUR
90+0.80 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120H3FKSA1 IKW15N120H3-DTE.pdf
IKW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Case: TO247-3
Mounting: THT
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Type of transistor: IGBT
Power dissipation: 217W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 75nC
Technology: TRENCHSTOP™ 3
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.69 EUR
16+4.62 EUR
17+4.38 EUR
60+4.20 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6401TRPBF irlml6401.pdf
IRLML6401TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 10571 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
261+0.27 EUR
350+0.20 EUR
394+0.18 EUR
878+0.08 EUR
926+0.08 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
BC847CE6327HTSA1 bc847_8_9_bc850.pdf
BC847CE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
141+0.50 EUR
Mindestbestellmenge: 141
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3607PBF irfs3607pbf.pdf
IRFB3607PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
108+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
BC857CE6327 BC857SH6327.pdf
BC857CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.20 EUR
486+0.15 EUR
750+0.10 EUR
795+0.09 EUR
Mindestbestellmenge: 358
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TLE42712GATMA1 TLE4271-2G.pdf
TLE42712GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 6...40V
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
31+2.32 EUR
33+2.19 EUR
100+2.12 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BC847BE6327HTSA1 bc847_8_9_bc850.pdf
BC847BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
496+0.14 EUR
729+0.10 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BC847BE6433HTMA1 bc847_8_9_bc850.pdf
BC847BE6433HTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
714+0.10 EUR
1563+0.05 EUR
1651+0.04 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAT5406WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5406WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 230mW
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.49 EUR
Mindestbestellmenge: 48
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