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BSS306NH6327XTSA1 BSS306NH6327XTSA1 INFINEON TECHNOLOGIES BSS306NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 7555 Stücke:
Lieferzeit 14-21 Tag (e)
465+0.15 EUR
560+ 0.13 EUR
625+ 0.11 EUR
740+ 0.097 EUR
785+ 0.092 EUR
Mindestbestellmenge: 465
BSS806NH6327XTSA1 BSS806NH6327XTSA1 INFINEON TECHNOLOGIES BSS806NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 7256 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
195+ 0.37 EUR
242+ 0.3 EUR
293+ 0.24 EUR
355+ 0.2 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 152
BSL214NH6327XTSA1 BSL214NH6327XTSA1 INFINEON TECHNOLOGIES BSL214NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Produkt ist nicht verfügbar
BCR185WH6327 BCR185WH6327 INFINEON TECHNOLOGIES BCR185.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
807+0.089 EUR
898+ 0.08 EUR
1017+ 0.07 EUR
1177+ 0.061 EUR
1244+ 0.057 EUR
Mindestbestellmenge: 807
IPB024N08N5ATMA1 IPB024N08N5ATMA1 INFINEON TECHNOLOGIES IPB024N08N5-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IDW10G65C5XKSA1 IDW10G65C5XKSA1 INFINEON TECHNOLOGIES IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 46A
Produkt ist nicht verfügbar
XC878CM16FFI5VACFXUMA1 XC878CM16FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC878-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: CAN x2; SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Produkt ist nicht verfügbar
IRF135B203 IRF135B203 INFINEON TECHNOLOGIES irf135b203.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
28+ 2.57 EUR
37+ 1.96 EUR
39+ 1.86 EUR
Mindestbestellmenge: 26
IRF135S203 INFINEON TECHNOLOGIES irf135b203.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPP80P06PHXKSA1 SPP80P06PHXKSA1 INFINEON TECHNOLOGIES SPP80P06PHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Power dissipation: 340W
Polarisation: unipolar
Kind of package: tube
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.59 EUR
15+ 5.02 EUR
19+ 3.83 EUR
20+ 3.62 EUR
Mindestbestellmenge: 13
BSP77E6433 BSP77E6433 INFINEON TECHNOLOGIES BSP77E6433.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Produkt ist nicht verfügbar
IRS2186PBF IRS2186PBF INFINEON TECHNOLOGIES irs2186pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
IRS2186STRPBF IRS2186STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
42+ 1.73 EUR
53+ 1.36 EUR
57+ 1.27 EUR
Mindestbestellmenge: 38
TLS850D0TAV50ATMA1 TLS850D0TAV50ATMA1 INFINEON TECHNOLOGIES Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266 Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 70mV
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
TLS850F0TAV33ATMA1 TLS850F0TAV33ATMA1 INFINEON TECHNOLOGIES TLS850F0TAV33.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
TLS850F2TAV50ATMA1 INFINEON TECHNOLOGIES Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5 Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
IPZ65R095C7XKSA1 INFINEON TECHNOLOGIES IPZ65R095C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 128W
Polarisation: unipolar
Produkt ist nicht verfügbar
IPP093N06N3GXKSA1 IPP093N06N3GXKSA1 INFINEON TECHNOLOGIES IPP093N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
DD340N18S INFINEON TECHNOLOGIES DD340N18S.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 INFINEON TECHNOLOGIES BSC340N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 4643 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
162+ 0.44 EUR
195+ 0.37 EUR
206+ 0.35 EUR
250+ 0.34 EUR
500+ 0.33 EUR
Mindestbestellmenge: 99
AIGW50N65H5XKSA1 AIGW50N65H5XKSA1 INFINEON TECHNOLOGIES AIGW50N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
Produkt ist nicht verfügbar
IRFR3410TRPBF IRFR3410TRPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7946TRPBF IRF7946TRPBF INFINEON TECHNOLOGIES IRF7946TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Power dissipation: 96W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR825TRPBF IRFR825TRPBF INFINEON TECHNOLOGIES irfr825pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 119W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7580MTRPBF IRF7580MTRPBF INFINEON TECHNOLOGIES IRF7580MTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 116A
Power dissipation: 115W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFH7084TRPBF IRFH7084TRPBF INFINEON TECHNOLOGIES IRFH7084TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
BGS12SN6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856 Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Output configuration: SPDT
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
TLE4207GXUMA2 TLE4207GXUMA2 INFINEON TECHNOLOGIES TLE4207G.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Case: PG-DSO-14
Output current: 0.8A
Number of channels: 2
Integrated circuit features: fault detection
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 8...18V
Kind of package: reel; tape
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.69 EUR
30+ 2.4 EUR
34+ 2.12 EUR
36+ 2 EUR
Mindestbestellmenge: 27
TLE42502GHTSA1 TLE42502GHTSA1 INFINEON TECHNOLOGIES TLE4250-2G-DTE.pdf Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5...36V
Output current: 50mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 4...40V
Produkt ist nicht verfügbar
TLE42642GHTSA2 TLE42642GHTSA2 INFINEON TECHNOLOGIES TLE42642G.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
TLE4264GHTSA1 INFINEON TECHNOLOGIES TLE4264.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.16A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-SOT223-4
Tolerance: ±2%
Produkt ist nicht verfügbar
TLE4266GHTMA1 TLE4266GHTMA1 INFINEON TECHNOLOGIES TLE4266G-DTE.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
auf Bestellung 4185 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.27 EUR
36+ 2.02 EUR
43+ 1.69 EUR
45+ 1.6 EUR
500+ 1.54 EUR
4000+ 1.53 EUR
Mindestbestellmenge: 32
TLE4268GXUMA2 TLE4268GXUMA2 INFINEON TECHNOLOGIES TLE4268G.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Case: PG-DSO-20
Output voltage: 5V
Output current: 0.15A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
38+ 1.93 EUR
43+ 1.7 EUR
45+ 1.62 EUR
250+ 1.54 EUR
Mindestbestellmenge: 34
TLE4269GXUMA1 TLE4269GXUMA1 INFINEON TECHNOLOGIES TLE4269.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
TLE4291EXUMA2 TLE4291EXUMA2 INFINEON TECHNOLOGIES Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
Produkt ist nicht verfügbar
TLE42962GV33HTSA1 TLE42962GV33HTSA1 INFINEON TECHNOLOGIES TLE4296-2GVxx.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 4...45V
Produkt ist nicht verfügbar
TLE42962GV50HTSA1 TLE42962GV50HTSA1 INFINEON TECHNOLOGIES TLE4296-2GVxx.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
TLE4296GV50HTSA1 TLE4296GV50HTSA1 INFINEON TECHNOLOGIES TLE4296G.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
TLE42994EXUMA1 TLE42994EXUMA1 INFINEON TECHNOLOGIES Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51 Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD
Kind of package: reel; tape
Input voltage: 4.4...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Case: PG-SSOP-14-EP
Output voltage: 3.3V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES TLE7257.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-DSO-8
DC supply current: 3mA
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
TLE7258DXUMA1 TLE7258DXUMA1 INFINEON TECHNOLOGIES TLE7258D.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-TSON-8
DC supply current: 3mA
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
TLE7268LCXUMA1 INFINEON TECHNOLOGIES TLE7268LCXUMA1.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Supply voltage: 5.5...40V DC
Produkt ist nicht verfügbar
TLE7268SKXUMA1 TLE7268SKXUMA1 INFINEON TECHNOLOGIES TLE7268LCXUMA1.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Supply voltage: 5.5...40V DC
Produkt ist nicht verfügbar
AIKP20N60CTAKSA1 AIKP20N60CTAKSA1 INFINEON TECHNOLOGIES AIKP20N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.29 EUR
16+ 4.68 EUR
18+ 3.99 EUR
19+ 3.78 EUR
250+ 3.69 EUR
Mindestbestellmenge: 14
FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES FP06R12W1T4B3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Collector current: 6A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Power dissipation: 94W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.62 EUR
Mindestbestellmenge: 2
IRLR7807ZTRPBF IRLR7807ZTRPBF INFINEON TECHNOLOGIES IRLR7807ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
BSM25GD120DN2E3224BOSA1 INFINEON TECHNOLOGIES BSM25GD120DN2E3224.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 25A
Power dissipation: 200W
Case: ECONOPACK 2K
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
AIKB20N60CTATMA1 AIKB20N60CTATMA1 INFINEON TECHNOLOGIES AIKB20N60CT.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKQ120N60TXKSA1 INFINEON TECHNOLOGIES IKQ120N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: PG-TO247-3-46
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 703nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 INFINEON TECHNOLOGIES IKQ120N60TA.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
AIKQ120N60CTXKSA1 AIKQ120N60CTXKSA1 INFINEON TECHNOLOGIES AIKQ120N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IRFR3910TRLPBF IRFR3910TRLPBF INFINEON TECHNOLOGIES irfr3910pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP037N08N3GXKSA1 IPP037N08N3GXKSA1 INFINEON TECHNOLOGIES IPP037N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.35 EUR
24+ 3 EUR
32+ 2.3 EUR
33+ 2.17 EUR
Mindestbestellmenge: 22
DD261N20K  DD261N20K  INFINEON TECHNOLOGIES DD261N22K.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V
Max. off-state voltage: 2kV
Max. forward voltage: 1.42V
Load current: 261A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB50-1
Produkt ist nicht verfügbar
TT122N22KOFHPSA2 TT122N22KOFHPSA2 INFINEON TECHNOLOGIES TT122N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of module: thyristor
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.95V
Load current: 122A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 3.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: BG-PB34-1
Produkt ist nicht verfügbar
IRFR3504ZTRPBF IRFR3504ZTRPBF INFINEON TECHNOLOGIES IRFR3504ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP80R360P7XKSA1 IPP80R360P7XKSA1 INFINEON TECHNOLOGIES IPP80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
Mindestbestellmenge: 20
IRF3805PBF IRF3805PBF INFINEON TECHNOLOGIES irf3805.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP50R190CEXKSA1 IPP50R190CEXKSA1 INFINEON TECHNOLOGIES IPP50R190CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
32+ 2.3 EUR
41+ 1.77 EUR
43+ 1.67 EUR
Mindestbestellmenge: 28
IRFR15N20DTRPBF IRFR15N20DTRPBF INFINEON TECHNOLOGIES IRFR15N20DTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Mounting: SMD
Case: DPAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 140W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSS306NH6327XTSA1 BSS306NH6327XTSA1.pdf
BSS306NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 7555 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
465+0.15 EUR
560+ 0.13 EUR
625+ 0.11 EUR
740+ 0.097 EUR
785+ 0.092 EUR
Mindestbestellmenge: 465
BSS806NH6327XTSA1 BSS806NH6327XTSA1.pdf
BSS806NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 7256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
195+ 0.37 EUR
242+ 0.3 EUR
293+ 0.24 EUR
355+ 0.2 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 152
BSL214NH6327XTSA1 BSL214NH6327XTSA1.pdf
BSL214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; 0.5W; TSOP6
Mounting: SMD
Case: TSOP6
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Produkt ist nicht verfügbar
BCR185WH6327 BCR185.pdf
BCR185WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
807+0.089 EUR
898+ 0.08 EUR
1017+ 0.07 EUR
1177+ 0.061 EUR
1244+ 0.057 EUR
Mindestbestellmenge: 807
IPB024N08N5ATMA1 IPB024N08N5-dte.pdf
IPB024N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IDW10G65C5XKSA1 IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc
IDW10G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; PG-TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 46A
Produkt ist nicht verfügbar
XC878CM16FFI5VACFXUMA1 XC878-DTE.pdf
XC878CM16FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: CAN x2; SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Produkt ist nicht verfügbar
IRF135B203 irf135b203.pdf
IRF135B203
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
26+2.85 EUR
28+ 2.57 EUR
37+ 1.96 EUR
39+ 1.86 EUR
Mindestbestellmenge: 26
IRF135S203 irf135b203.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 135V
Drain current: 91A
Pulsed drain current: 512A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 0.27µC
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPP80P06PHXKSA1 SPP80P06PHXKSA1-DTE.pdf
SPP80P06PHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Power dissipation: 340W
Polarisation: unipolar
Kind of package: tube
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
13+5.59 EUR
15+ 5.02 EUR
19+ 3.83 EUR
20+ 3.62 EUR
Mindestbestellmenge: 13
BSP77E6433 BSP77E6433.pdf
BSP77E6433
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Produkt ist nicht verfügbar
IRS2186PBF irs2186pbf.pdf
IRS2186PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
IRS2186STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
38+1.92 EUR
42+ 1.73 EUR
53+ 1.36 EUR
57+ 1.27 EUR
Mindestbestellmenge: 38
TLS850D0TAV50ATMA1 Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266
TLS850D0TAV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 70mV
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
TLS850F0TAV33ATMA1 TLS850F0TAV33.pdf
TLS850F0TAV33ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
TLS850F2TAV50ATMA1 Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
IPZ65R095C7XKSA1 IPZ65R095C7-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 128W
Polarisation: unipolar
Produkt ist nicht verfügbar
IPP093N06N3GXKSA1 IPP093N06N3G-DTE.pdf
IPP093N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
DD340N18S DD340N18S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
BSC340N08NS3GATMA1 BSC340N08NS3G-DTE.pdf
BSC340N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 4643 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
99+0.73 EUR
162+ 0.44 EUR
195+ 0.37 EUR
206+ 0.35 EUR
250+ 0.34 EUR
500+ 0.33 EUR
Mindestbestellmenge: 99
AIGW50N65H5XKSA1 AIGW50N65H5.pdf
AIGW50N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
Produkt ist nicht verfügbar
IRFR3410TRPBF description irfr3410pbf.pdf
IRFR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7946TRPBF IRF7946TRPBF.pdf
IRF7946TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Power dissipation: 96W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR825TRPBF irfr825pbf.pdf
IRFR825TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 119W
Case: DPAK
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7580MTRPBF IRF7580MTRPBF.pdf
IRF7580MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 116A
Power dissipation: 115W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFH7084TRPBF IRFH7084TRPBF.pdf
IRFH7084TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
BGS12SN6E6327XTSA1 Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Number of channels: 2
Mounting: SMD
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Output configuration: SPDT
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
TLE4207GXUMA2 TLE4207G.pdf
TLE4207GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Case: PG-DSO-14
Output current: 0.8A
Number of channels: 2
Integrated circuit features: fault detection
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 8...18V
Kind of package: reel; tape
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
27+2.69 EUR
30+ 2.4 EUR
34+ 2.12 EUR
36+ 2 EUR
Mindestbestellmenge: 27
TLE42502GHTSA1 TLE4250-2G-DTE.pdf
TLE42502GHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.5÷36V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5...36V
Output current: 50mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 4...40V
Produkt ist nicht verfügbar
TLE42642GHTSA2 TLE42642G.pdf
TLE42642GHTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
TLE4264GHTSA1 TLE4264.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Operating temperature: -40...150°C
Output voltage: 5V
Output current: 0.16A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-SOT223-4
Tolerance: ±2%
Produkt ist nicht verfügbar
TLE4266GHTMA1 TLE4266G-DTE.pdf
TLE4266GHTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.15A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...45V
auf Bestellung 4185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
32+2.27 EUR
36+ 2.02 EUR
43+ 1.69 EUR
45+ 1.6 EUR
500+ 1.54 EUR
4000+ 1.53 EUR
Mindestbestellmenge: 32
TLE4268GXUMA2 TLE4268G.pdf
TLE4268GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Case: PG-DSO-20
Output voltage: 5V
Output current: 0.15A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 5.5...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
34+2.13 EUR
38+ 1.93 EUR
43+ 1.7 EUR
45+ 1.62 EUR
250+ 1.54 EUR
Mindestbestellmenge: 34
TLE4269GXUMA1 TLE4269.pdf
TLE4269GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
TLE4291EXUMA2 Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce
TLE4291EXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
Produkt ist nicht verfügbar
TLE42962GV33HTSA1 TLE4296-2GVxx.pdf
TLE42962GV33HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 30mA; PG-SCT595
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 4...45V
Produkt ist nicht verfügbar
TLE42962GV50HTSA1 TLE4296-2GVxx.pdf
TLE42962GV50HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
TLE4296GV50HTSA1 TLE4296G.pdf
TLE4296GV50HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 30mA; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 30mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±4%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
TLE42994EXUMA1 Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51
TLE42994EXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD
Kind of package: reel; tape
Input voltage: 4.4...45V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...150°C
Case: PG-SSOP-14-EP
Output voltage: 3.3V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
TLE7257SJXUMA1 TLE7257.pdf
TLE7257SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-DSO-8
DC supply current: 3mA
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
TLE7258DXUMA1 TLE7258D.pdf
TLE7258DXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-TSON-8
DC supply current: 3mA
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
TLE7268LCXUMA1 TLE7268LCXUMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Supply voltage: 5.5...40V DC
Produkt ist nicht verfügbar
TLE7268SKXUMA1 TLE7268LCXUMA1.pdf
TLE7268SKXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Supply voltage: 5.5...40V DC
Produkt ist nicht verfügbar
AIKP20N60CTAKSA1 AIKP20N60CT.pdf
AIKP20N60CTAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
14+5.29 EUR
16+ 4.68 EUR
18+ 3.99 EUR
19+ 3.78 EUR
250+ 3.69 EUR
Mindestbestellmenge: 14
FP06R12W1T4B3BOMA1 FP06R12W1T4B3.pdf
FP06R12W1T4B3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Case: AG-EASY1B-1
Max. off-state voltage: 1.2kV
Collector current: 6A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Power dissipation: 94W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+44.62 EUR
Mindestbestellmenge: 2
IRLR7807ZTRPBF IRLR7807ZTRPBF.pdf
IRLR7807ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
BSM25GD120DN2E3224BOSA1 BSM25GD120DN2E3224.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 25A
Power dissipation: 200W
Case: ECONOPACK 2K
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Application: Inverter
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
AIKB20N60CTATMA1 AIKB20N60CT.pdf
AIKB20N60CTATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKQ120N60TXKSA1 IKQ120N60T.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: PG-TO247-3-46
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 703nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKQ120N60TAXKSA1 IKQ120N60TA.pdf
IKQ120N60TAXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
AIKQ120N60CTXKSA1 AIKQ120N60CT.pdf
AIKQ120N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IRFR3910TRLPBF irfr3910pbf.pdf
IRFR3910TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP037N08N3GXKSA1 IPP037N08N3G-DTE.pdf
IPP037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.35 EUR
24+ 3 EUR
32+ 2.3 EUR
33+ 2.17 EUR
Mindestbestellmenge: 22
DD261N20K  DD261N22K.pdf
DD261N20K 
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 261A; BG-PB50-1; Ufmax: 1.42V
Max. off-state voltage: 2kV
Max. forward voltage: 1.42V
Load current: 261A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB50-1
Produkt ist nicht verfügbar
TT122N22KOFHPSA2 TT122N22KOF.pdf
TT122N22KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of module: thyristor
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.95V
Load current: 122A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 3.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: BG-PB34-1
Produkt ist nicht verfügbar
IRFR3504ZTRPBF IRFR3504ZTRPBF.pdf
IRFR3504ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP80R360P7XKSA1 IPP80R360P7.pdf
IPP80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.58 EUR
Mindestbestellmenge: 20
IRF3805PBF irf3805.pdf
IRF3805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP50R190CEXKSA1 IPP50R190CE-DTE.pdf
IPP50R190CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 127W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
28+2.57 EUR
32+ 2.3 EUR
41+ 1.77 EUR
43+ 1.67 EUR
Mindestbestellmenge: 28
IRFR15N20DTRPBF IRFR15N20DTRPBF.pdf
IRFR15N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Mounting: SMD
Case: DPAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 140W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Produkt ist nicht verfügbar
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