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IRG8CH42K10F Infineon Technologies irg8ch42k10f.pdf Description: IGBT 1200V 40A DIE
Produkt ist nicht verfügbar
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BSP75NNT BSP75NNT Infineon Technologies BSP75N_2008-07-10.pdf Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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PTFA181001E V4 T500 PTFA181001E V4 T500 Infineon Technologies PTFA181001(E,F).pdf Description: IC FET RF LDMOS
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TLE4253GSXUMA2 TLE4253GSXUMA2 Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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TLE4254GSXUMA2 Infineon Technologies Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6 Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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IDC08D120T6MX1SA2 Infineon Technologies Infineon-IDC08D120T6M_L4667B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151dc36f1d0f50 Description: DIODE GP 1.2KV 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A
Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V
Produkt ist nicht verfügbar
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IDC10D120T6MX1SA1 Infineon Technologies Infineon-IDC10D120T6M_L4668B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151dc977af0f53 Description: DIODE STD 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V
Produkt ist nicht verfügbar
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IDC15D120T6MX1SA2 Infineon Technologies Infineon-IDC15D120T6M_L4669B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151dcf0a670f55 Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 25 A
Current - Reverse Leakage @ Vr: 5.2 µA @ 1200 V
Produkt ist nicht verfügbar
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IDC28D120T6MX1SA2 Infineon Technologies Infineon-IDC28D120T6M_L4671B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151ddb5e980f57 Description: DIODE STD 1200V 50A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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IDC40D120T6MX1SA4 Infineon Technologies Infineon-IDC40D120T6M_L4672B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151dddbaec0f58 Description: DIODE STD 1200V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
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SIDC06D120H8X1SA2 SIDC06D120H8X1SA2 Infineon Technologies Infineon-SIDC06D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182203fc7973f46 Description: DIODE STANDARD 1.2KV 7.5A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC08D120H8X1SA1 SIDC08D120H8X1SA1 Infineon Technologies Infineon-SIDC08D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182203fba833f43 Description: DIODE STANDARD 1200V 150A
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC105D120H8X1SA1 SIDC105D120H8X1SA1 Infineon Technologies Infineon-SIDC105D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182203fa90e3f40 Description: DIODE STANDARD 1.2KV 200A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC10D120H8X1SA2 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC14D120H8X1SA1 Infineon Technologies Infineon-SIDC14D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182205173f420a6 Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC30D120H8X1SA4 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC42D120H8X1SA3 SIDC42D120H8X1SA3 Infineon Technologies Infineon-SIDC42D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182205188dc20ac Description: DIODE STD 1200V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC81D120H8X1SA3 SIDC81D120H8X1SA3 Infineon Technologies Infineon-SIDC81D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f389001822051937320af Description: DIODE STANDARD 1200V 150A
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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IRD3CH101DB6 Infineon Technologies ird3ch101db6.pdf Description: DIODE GEN PURP 1.2KV 200A DIE
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IRD3CH101DD6 Infineon Technologies Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH101DF6 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRD3CH11DB6 Infineon Technologies IRD3CH11DB6_Web.pdf Description: DIODE GEN PURP 1.2KV 25A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A
Current - Reverse Leakage @ Vr: 700 nA @ 1200 V
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IRD3CH11DD6 Infineon Technologies Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH11DF6 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
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IRD3CH16DB6 Infineon Technologies ird3ch16db6.pdf Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH16DD6 Infineon Technologies Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH16DF6 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
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IRD3CH24DB6 Infineon Technologies ird3ch24db6.pdf Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH24DD6 Infineon Technologies Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH24DF6 Infineon Technologies Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH31DB6 Infineon Technologies ird3ch31db6.pdf Description: DIODE GEN PURP 1.2KV 50A WAFER
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IRD3CH31DD6 Infineon Technologies Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH31DF6 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
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IRD3CH42DB6 Infineon Technologies ird3ch42db6.pdf Description: DIODE GEN PURP 1.2KV 75A DIE
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IRD3CH42DD6 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH42DF6 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRD3CH53DB6 Infineon Technologies ird3ch53db6.pdf Description: DIODE STANDARD 1200V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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IRD3CH53DD6 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Produkt ist nicht verfügbar
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IRD3CH53DF6 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Produkt ist nicht verfügbar
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IRD3CH5BD6 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Produkt ist nicht verfügbar
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IRD3CH5DB6 Infineon Technologies ird3ch5db6.pdf Description: DIODE GEN PURP 1.2KV 5A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A
Current - Reverse Leakage @ Vr: 100 nA @ 1200 V
Produkt ist nicht verfügbar
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IRD3CH82DB6 Infineon Technologies ird3ch82db6.pdf Description: DIODE GEN PURP 1.2KV 150A DIE
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IRD3CH82DD6 Infineon Technologies Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH82DF6 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH9DB6 Infineon Technologies ird3ch9db6.pdf Description: DIODE GEN PURP 1.2KV 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 154 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 10 A
Current - Reverse Leakage @ Vr: 200 nA @ 1200 V
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IRD3CH9DD6 Infineon Technologies Description: DIODE CHIP EMITTER CONTROLLED
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IRD3CH9DF6 Infineon Technologies Description: DIODE CHIP EMITTER CONTROLLED
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IPI11N60C3AAKSA2 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH I2PAK
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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KIT_XMC14_BOOT_001 KIT_XMC14_BOOT_001 Infineon Technologies Infineon-Board_Users_Manual_XMC1400_Boot_Kit.pdf-UM-v01_00-EN.pdf?fileId=5546d462525dbac401527815f9a073fd Description: BOOT KIT XMC1400 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1400
Platform: Boot Kit
Part Status: Active
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.77 EUR
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KITXMC1XAKMOTOR001TOBO1 KITXMC1XAKMOTOR001TOBO1 Infineon Technologies Infineon-ApplicationBrochure_Embedded_systems-ABR-v01_00-EN.pdf?fileId=5546d46253f6505701547bf6bd196bff Description: EVAL BOARD FOR XMC1300
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
1+231.26 EUR
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EVAL3AR4780VJZTOBO1 EVAL3AR4780VJZTOBO1 Infineon Technologies ice3ar4780vjz-application-note-5546d46147a9c2e401480cef14280b61 Description: EVAL BOARD FOR ICE3AR4780VJZ
Packaging: Bulk
Voltage - Output: 5V
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE3AR4780VJZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 12W
Contents: Board(s)
Produkt ist nicht verfügbar
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EVALQRCICE2QR4780ZTOBO1 EVALQRCICE2QR4780ZTOBO1 Infineon Technologies 12w-5v-evaluation-board-using-ice2qr4780z-db3a30432ee77f32012eeaed66873939 Description: EVAL BOARD FOR ICE2QR4780Z
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE2QR4780Z
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 12W
Contents: Board(s)
auf Bestellung 1 Stücke:
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EVALICE3AR1080VJZTOBO1 EVALICE3AR1080VJZTOBO1 Infineon Technologies Infineon-ICE3AR1080VJZ_Demoboard-AN-v01_00-EN.pdf?fileId=5546d4624cb7f111014d4d3851de429d Description: EVAL BOARD FOR ICE3AR1080VJZ
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 2.83A
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE3AR1080VJZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 34W
Contents: Board(s)
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EVALQRCICE2QR0680ZTOBO1 EVALQRCICE2QR0680ZTOBO1 Infineon Technologies 40w-20v-evaluation-board-using-ice2qr0680z-db3a3043321e4994013242dde7fb7663 Description: EVAL BOARD FOR ICE2QR0680Z
Packaging: Bulk
Voltage - Output: 20V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE2QR0680Z
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 40W
Contents: Board(s)
auf Bestellung 1 Stücke:
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EVALSF3ICE3BS03LJGTOBO1 EVALSF3ICE3BS03LJGTOBO1 Infineon Technologies AN-PS0015-ICE3BS03LJG-60W16VSMPS-V1_0.pdf?fileId=db3a30431689f4420116b33869fc05e4 Description: EVAL BOARD FOR ICE3BS03LJG
Packaging: Bulk
Voltage - Output: 16V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 3.75A
Frequency - Switching: 65kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE3BS03LJG
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 60W
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+224.1 EUR
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EVAL3GS03LJGTOBO1 EVAL3GS03LJGTOBO1 Infineon Technologies ICE3GS03LJG.pdf Description: EVAL BOARD FOR ICE3GS03LJG
Packaging: Bulk
Voltage - Output: 19.5V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 3.34A
Frequency - Switching: 130kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE3GS03LJG
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 65W
Contents: Board(s)
auf Bestellung 4 Stücke:
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EVALQRSICE2QS03GTOBO1 EVALQRSICE2QS03GTOBO1 Infineon Technologies 36w-evaluation-board-using-ice2qs03g-db3a304324fc7f9a0125068d0b17704b Description: EVAL BOARD FOR ICE2QS03G
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 3A
Frequency - Switching: 38kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE2QS03G
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 36W
Contents: Board(s)
auf Bestellung 2 Stücke:
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1+199.41 EUR
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EVALSF3ICE3AS03LJGTOBO1 EVALSF3ICE3AS03LJGTOBO1 Infineon Technologies Datasheet_ICE3AS03LJG_3+Jul+2009-V20.pdf?folderId=db3a304412b407950112b409ae510341&fileId=db3a30432239cccd01229cd59dfe56e2 Description: EVAL BOARD FOR ICE3AS03LJG
Packaging: Bulk
Voltage - Output: 19.5V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 3.34A
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE3AS03LJG
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 65W
Contents: Board(s)
auf Bestellung 9 Stücke:
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1+208.65 EUR
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ICE3AS03LJGXUMA1 ICE3AS03LJGXUMA1 Infineon Technologies Datasheet_ICE3AS03LJG_3+Jul+2009-V20.pdf?folderId=db3a304412b407950112b409ae510341&fileId=db3a30432239cccd01229cd59dfe56e2 Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
auf Bestellung 4981 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
15+1.2 EUR
25+1.08 EUR
100+0.96 EUR
250+0.9 EUR
500+0.86 EUR
1000+0.83 EUR
Mindestbestellmenge: 11
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ICE3BS03LJGXUMA1 ICE3BS03LJGXUMA1 Infineon Technologies Datasheet_ICE3BS03LJG_6Dec07-V2_0+.pdf?folderId=db3a3043156fd5730115da1adffb1528&fileId=db3a30431689f4420116b2b751ff05b0 Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
auf Bestellung 16425 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
17+1.09 EUR
25+0.99 EUR
100+0.87 EUR
250+0.82 EUR
500+0.78 EUR
1000+0.75 EUR
Mindestbestellmenge: 12
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IRG8CH42K10F irg8ch42k10f.pdf
Hersteller: Infineon Technologies
Description: IGBT 1200V 40A DIE
Produkt ist nicht verfügbar
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BSP75NNT BSP75N_2008-07-10.pdf
BSP75NNT
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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PTFA181001E V4 T500 PTFA181001(E,F).pdf
PTFA181001E V4 T500
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS
Produkt ist nicht verfügbar
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TLE4253GSXUMA2 fundamentals-of-power-semiconductors
TLE4253GSXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4254GSXUMA2 Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IDC08D120T6MX1SA2 Infineon-IDC08D120T6M_L4667B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151dc36f1d0f50
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A
Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V
Produkt ist nicht verfügbar
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IDC10D120T6MX1SA1 Infineon-IDC10D120T6M_L4668B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151dc977af0f53
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V
Produkt ist nicht verfügbar
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IDC15D120T6MX1SA2 Infineon-IDC15D120T6M_L4669B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151dcf0a670f55
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 25 A
Current - Reverse Leakage @ Vr: 5.2 µA @ 1200 V
Produkt ist nicht verfügbar
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IDC28D120T6MX1SA2 Infineon-IDC28D120T6M_L4671B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151ddb5e980f57
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 50A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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IDC40D120T6MX1SA4 Infineon-IDC40D120T6M_L4672B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151dddbaec0f58
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC06D120H8X1SA2 Infineon-SIDC06D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182203fc7973f46
SIDC06D120H8X1SA2
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1.2KV 7.5A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC08D120H8X1SA1 Infineon-SIDC08D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182203fba833f43
SIDC08D120H8X1SA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1200V 150A
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC105D120H8X1SA1 Infineon-SIDC105D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182203fa90e3f40
SIDC105D120H8X1SA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1.2KV 200A SAWN
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC10D120H8X1SA2 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC14D120H8X1SA1 Infineon-SIDC14D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182205173f420a6
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC30D120H8X1SA4 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC42D120H8X1SA3 Infineon-SIDC42D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f38900182205188dc20ac
SIDC42D120H8X1SA3
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 75A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC81D120H8X1SA3 Infineon-SIDC81D120H8-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c821f389001822051937320af
SIDC81D120H8X1SA3
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1200V 150A
Packaging: Bulk
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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IRD3CH101DB6 ird3ch101db6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 200A DIE
Produkt ist nicht verfügbar
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IRD3CH101DD6
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IRD3CH101DF6 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRD3CH11DB6 IRD3CH11DB6_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 25 A
Current - Reverse Leakage @ Vr: 700 nA @ 1200 V
Produkt ist nicht verfügbar
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IRD3CH11DD6
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IRD3CH11DF6 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Produkt ist nicht verfügbar
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IRD3CH16DB6 ird3ch16db6.pdf
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IRD3CH16DD6
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IRD3CH16DF6 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Produkt ist nicht verfügbar
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IRD3CH24DB6 ird3ch24db6.pdf
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IRD3CH24DD6
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IRD3CH24DF6
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IRD3CH31DB6 ird3ch31db6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 50A WAFER
Produkt ist nicht verfügbar
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IRD3CH31DD6
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IRD3CH31DF6 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Produkt ist nicht verfügbar
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IRD3CH42DB6 ird3ch42db6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 75A DIE
Produkt ist nicht verfügbar
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IRD3CH42DD6 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IRD3CH42DF6 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRD3CH53DB6 ird3ch53db6.pdf
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1200V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Produkt ist nicht verfügbar
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IRD3CH53DD6 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Produkt ist nicht verfügbar
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IRD3CH53DF6 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Produkt ist nicht verfügbar
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IRD3CH5BD6 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Packaging: Bulk
Produkt ist nicht verfügbar
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IRD3CH5DB6 ird3ch5db6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 5A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 96 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A
Current - Reverse Leakage @ Vr: 100 nA @ 1200 V
Produkt ist nicht verfügbar
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IRD3CH82DB6 ird3ch82db6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 150A DIE
Produkt ist nicht verfügbar
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IRD3CH82DD6
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRD3CH82DF6 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IRD3CH9DB6 ird3ch9db6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 154 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 10 A
Current - Reverse Leakage @ Vr: 200 nA @ 1200 V
Produkt ist nicht verfügbar
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IRD3CH9DD6
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRD3CH9DF6
Hersteller: Infineon Technologies
Description: DIODE CHIP EMITTER CONTROLLED
Produkt ist nicht verfügbar
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IPI11N60C3AAKSA2 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH I2PAK
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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KIT_XMC14_BOOT_001 Infineon-Board_Users_Manual_XMC1400_Boot_Kit.pdf-UM-v01_00-EN.pdf?fileId=5546d462525dbac401527815f9a073fd
KIT_XMC14_BOOT_001
Hersteller: Infineon Technologies
Description: BOOT KIT XMC1400 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1400
Platform: Boot Kit
Part Status: Active
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.77 EUR
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KITXMC1XAKMOTOR001TOBO1 Infineon-ApplicationBrochure_Embedded_systems-ABR-v01_00-EN.pdf?fileId=5546d46253f6505701547bf6bd196bff
KITXMC1XAKMOTOR001TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR XMC1300
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+231.26 EUR
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EVAL3AR4780VJZTOBO1 ice3ar4780vjz-application-note-5546d46147a9c2e401480cef14280b61
EVAL3AR4780VJZTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE3AR4780VJZ
Packaging: Bulk
Voltage - Output: 5V
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE3AR4780VJZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 12W
Contents: Board(s)
Produkt ist nicht verfügbar
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EVALQRCICE2QR4780ZTOBO1 12w-5v-evaluation-board-using-ice2qr4780z-db3a30432ee77f32012eeaed66873939
EVALQRCICE2QR4780ZTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE2QR4780Z
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE2QR4780Z
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 12W
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+107.01 EUR
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EVALICE3AR1080VJZTOBO1 Infineon-ICE3AR1080VJZ_Demoboard-AN-v01_00-EN.pdf?fileId=5546d4624cb7f111014d4d3851de429d
EVALICE3AR1080VJZTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE3AR1080VJZ
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 2.83A
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE3AR1080VJZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 34W
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+217.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EVALQRCICE2QR0680ZTOBO1 40w-20v-evaluation-board-using-ice2qr0680z-db3a3043321e4994013242dde7fb7663
EVALQRCICE2QR0680ZTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE2QR0680Z
Packaging: Bulk
Voltage - Output: 20V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE2QR0680Z
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 40W
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+187.26 EUR
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EVALSF3ICE3BS03LJGTOBO1 AN-PS0015-ICE3BS03LJG-60W16VSMPS-V1_0.pdf?fileId=db3a30431689f4420116b33869fc05e4
EVALSF3ICE3BS03LJGTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE3BS03LJG
Packaging: Bulk
Voltage - Output: 16V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 3.75A
Frequency - Switching: 65kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE3BS03LJG
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 60W
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+224.1 EUR
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EVAL3GS03LJGTOBO1 ICE3GS03LJG.pdf
EVAL3GS03LJGTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE3GS03LJG
Packaging: Bulk
Voltage - Output: 19.5V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 3.34A
Frequency - Switching: 130kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE3GS03LJG
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 65W
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+230.31 EUR
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EVALQRSICE2QS03GTOBO1 36w-evaluation-board-using-ice2qs03g-db3a304324fc7f9a0125068d0b17704b
EVALQRSICE2QS03GTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE2QS03G
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 3A
Frequency - Switching: 38kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE2QS03G
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 36W
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+199.41 EUR
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EVALSF3ICE3AS03LJGTOBO1 Datasheet_ICE3AS03LJG_3+Jul+2009-V20.pdf?folderId=db3a304412b407950112b409ae510341&fileId=db3a30432239cccd01229cd59dfe56e2
EVALSF3ICE3AS03LJGTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE3AS03LJG
Packaging: Bulk
Voltage - Output: 19.5V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 3.34A
Frequency - Switching: 100kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE3AS03LJG
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 65W
Contents: Board(s)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+208.65 EUR
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ICE3AS03LJGXUMA1 Datasheet_ICE3AS03LJG_3+Jul+2009-V20.pdf?folderId=db3a304412b407950112b409ae510341&fileId=db3a30432239cccd01229cd59dfe56e2
ICE3AS03LJGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
auf Bestellung 4981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
15+1.2 EUR
25+1.08 EUR
100+0.96 EUR
250+0.9 EUR
500+0.86 EUR
1000+0.83 EUR
Mindestbestellmenge: 11
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ICE3BS03LJGXUMA1 Datasheet_ICE3BS03LJG_6Dec07-V2_0+.pdf?folderId=db3a3043156fd5730115da1adffb1528&fileId=db3a30431689f4420116b2b751ff05b0
ICE3BS03LJGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
auf Bestellung 16425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
17+1.09 EUR
25+0.99 EUR
100+0.87 EUR
250+0.82 EUR
500+0.78 EUR
1000+0.75 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
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