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IPA60R520C6XKSA1 IPA60R520C6XKSA1 Infineon Technologies IPA60R520C6.pdf Description: MOSFET N-CH 600V 8.1A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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IDH05SG60CXKSA1 IDH05SG60CXKSA1 Infineon Technologies Infineon-IDH05SG60C-DS-v02_04-en.pdf?fileId=db3a30431f848401011ff4cebd9a531b Description: DIODE SIL CARB 600V 5A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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TLE5045ICR050HALA1 TLE5045ICR050HALA1 Infineon Technologies Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2 Description: SENSOR HALL EFFECT PWM SSO-2
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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9+2.13 EUR
10+2.03 EUR
25+1.91 EUR
50+1.82 EUR
100+1.75 EUR
500+1.59 EUR
1000+1.53 EUR
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TLE5045ICR050HALA1 TLE5045ICR050HALA1 Infineon Technologies Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2 Description: SENSOR HALL EFFECT PWM SSO-2
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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EVALAUDAMP25TOBO1 EVALAUDAMP25TOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_AUDAMP25-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7c5627e7017c6f4bbede78fc Description: EVAL BOARD FOR MA5332
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CY8C20424-12LQXIT CY8C20424-12LQXIT Infineon Technologies Infineon-CY8C20224_CY8C20324_CY8C20424_CY8C20524_CAPSENSE_PSOC_PROGRAMMABLE_SYSTEM_ON_CHIP-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecae11743f6 Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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PSB2161TV1.1 PSB2161TV1.1 Infineon Technologies SIEMS02152-1.pdf?t.download=true&u=5oefqw Description: ARCOFI-SP AUDIO RINGING CODEC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Audio
Data Interface: Serial
Operating Temperature: -25°C ~ 80°C
Voltage - Supply, Analog: 4.75V ~ 5.25V
Voltage - Supply, Digital: 4.75V ~ 5.25V
Number of ADCs / DACs: 1 / 1
Sigma Delta: No
Supplier Device Package: P-DSO-28
Part Status: Active
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FS100R12KT4BOSA1 Infineon Technologies Infineon-FS100R12KT4-DS-v02_00-en_de.pdf?fileId=db3a30431a47d73d011a496e69ba013f Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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TLE493DP2B6MS2GOTOBO1 TLE493DP2B6MS2GOTOBO1 Infineon Technologies Infineon-3DMS2GO_TLE493D-P2B6-UserManual-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aaa6e84cb0eca Description: TLE493D-P2B6MS2GO KIT
Packaging: Bulk
Sensitivity: 15.4LSB/mT, 7.7LSB/mT
Interface: I2C
Contents: Board(s)
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P2B6, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±160mT
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XMC13S2Q024X0032ABXUMA1 XMC13S2Q024X0032ABXUMA1 Infineon Technologies Description: 32-BIT INDUSTRIAL MICROCONTROLLE
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XMC13S2Q024X0016ABXUMA1 XMC13S2Q024X0016ABXUMA1 Infineon Technologies Description: XMC13S2 - 32-BIT INDUSTRIAL MICR
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XMC1302T038X0128ABXUMA1 XMC1302T038X0128ABXUMA1 Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1302T038X0128ABXUMA1 XMC1302T038X0128ABXUMA1 Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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10+3.56 EUR
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100+2.93 EUR
250+2.77 EUR
500+2.67 EUR
1000+2.59 EUR
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XMC1302T028X0016ABXUMA1 XMC1302T028X0016ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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3000+1.72 EUR
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XMC1302T028X0016ABXUMA1 XMC1302T028X0016ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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5+3.66 EUR
10+2.73 EUR
25+2.49 EUR
100+2.23 EUR
250+2.11 EUR
500+2.03 EUR
1000+1.97 EUR
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TLD22522RCLEVALTOBO1 TLD22522RCLEVALTOBO1 Infineon Technologies Infineon-TLD2252-2_RCL_EVAL-UserManual-v01_00-EN.pdf?fileId=5546d4627645f8770176614d153c185a Description: EVAL BOARD FOR TLD2252-2EP
Packaging: Bulk
Voltage - Input: 8V ~ 16V
Contents: Board(s)
Current - Output / Channel: 120mA
Utilized IC / Part: TLD2252-2EP
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
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1+192.17 EUR
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IPP065N03LGXKSA1 IPP065N03LGXKSA1 Infineon Technologies IPP065N03L_rev1.02.pdf?folderId=db3a30431441fb5d01148c401f250e27&fileId=db3a30431441fb5d011492371ebc0fe2 Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
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EVALIM67D130FLEXKITTOBO1 EVALIM67D130FLEXKITTOBO1 Infineon Technologies Infineon-Microphoneflexevaluationkit-ProductBrief-v01_01-EN.pdf?fileId=5546d4626f229553016fa43619613de2 Description: EVAL KIT FOR IM67D130
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM67D130
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
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1+50.6 EUR
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BCR431UXTSA1 BCR431UXTSA1 Infineon Technologies Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
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3000+0.25 EUR
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BCR431UXTSA1 BCR431UXTSA1 Infineon Technologies Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
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43+0.42 EUR
48+0.37 EUR
100+0.32 EUR
250+0.29 EUR
500+0.28 EUR
1000+0.27 EUR
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TTB6C95N16LOF Infineon Technologies INFNS20693-1.pdf?t.download=true&u=5oefqw Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
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BTS54220LBAAUMA1 BTS54220LBAAUMA1 Infineon Technologies Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051 Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTS54220LBAAUMA1 BTS54220LBAAUMA1 Infineon Technologies Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051 Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS54220LBEAUMA1 BTS54220LBEAUMA1 Infineon Technologies BTS54220-LBE.pdf Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Produkt ist nicht verfügbar
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BTS54220LBFAUMA1 BTS54220LBFAUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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IDP12E120XKSA1390 IDP12E120XKSA1390 Infineon Technologies Infineon-IDP12E120-DS-v02_03-en.pdf?fileId=db3a30432313ff5e012374c3dade485b Description: IDP12E120 - SILICON POWER DIODE
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WLC1115-68LQXQ WLC1115-68LQXQ Infineon Technologies Infineon-WLC1115_Wireless_charging_IC_WLC_-_Transmitter_15W_with_integrated_USB_Type-C_PD_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c80027ecd0180927a72421cd6 Description: WIRELESS CHARGING IC
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
auf Bestellung 254 Stücke:
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2+9.13 EUR
10+6.98 EUR
25+6.44 EUR
80+5.93 EUR
230+5.59 EUR
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WLC1115-68LQXQT WLC1115-68LQXQT Infineon Technologies Infineon-WLC1115_Wireless_charging_IC_WLC_-_Transmitter_15W_with_integrated_USB_Type-C_PD_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c80027ecd0180927a72421cd6 Description: WIRELESS CHARGING IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
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WLC1115-68LQXQT WLC1115-68LQXQT Infineon Technologies Infineon-WLC1115_Wireless_charging_IC_WLC_-_Transmitter_15W_with_integrated_USB_Type-C_PD_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c80027ecd0180927a72421cd6 Description: WIRELESS CHARGING IC
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
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IPS80R1K4P7 IPS80R1K4P7 Infineon Technologies INFN-S-A0004583388-1.pdf?t.download=true&u=5oefqw Description: IPS80R1K4 - 800V COOLMOS N-CHANN
Produkt ist nicht verfügbar
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IPS80R750P7AKMA1 IPS80R750P7AKMA1 Infineon Technologies Infineon-IPS80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedb79d591183 Description: MOSFET N-CH 800V 7A TO251-3
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IPS80R2K4P7AKMA1 IPS80R2K4P7AKMA1 Infineon Technologies Infineon-IPS80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ced92d89f1179 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
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FZ1600R17HP4_B21 Infineon Technologies INFN-S-A0001441407-1.pdf?t.download=true&u=5oefqw Description: FZ1600R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
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SAB-80C515A-N18 SAB-80C515A-N18 Infineon Technologies INFNS25460-1.pdf?t.download=true&u=5oefqw Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 18MHz
RAM Size: 1.25K x 8
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: 80C515
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: P-LCC-68
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
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IPF05N03LAG IPF05N03LAG Infineon Technologies INFNS12007-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
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PEB2235PV4.1IPAT PEB2235PV4.1IPAT Infineon Technologies SIEMD00111-158.pdf?t.download=true&u=5oefqw Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 190mA
Supplier Device Package: P-DIP-28
Part Status: Active
Number of Circuits: 32
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PEB2075PV1.3-IDEC PEB2075PV1.3-IDEC Infineon Technologies SIEMS02116-1.pdf?t.download=true&u=5oefqw Description: ISDN D-CHANNEL EXCH. CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 10mA
Supplier Device Package: P-DIP-28
Part Status: Active
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TLS810D1EJV33XUMA1 TLS810D1EJV33XUMA1 Infineon Technologies Infineon-TLS810D1xxV33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101592101892b367d Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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10+1.81 EUR
25+1.65 EUR
100+1.46 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.27 EUR
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BSC883N03LS G BSC883N03LS G Infineon Technologies INFNS16415-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
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916+0.58 EUR
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BSC026N02KSG BSC026N02KSG Infineon Technologies INFNS16144-1.pdf?t.download=true&u=5oefqw Description: BSC026N02 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
auf Bestellung 27190 Stücke:
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BSC0503NSIATMA1 BSC0503NSIATMA1 Infineon Technologies Infineon-BSC0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f026ba60b3c73 Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 9378 Stücke:
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500+0.93 EUR
1000+0.85 EUR
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BSC883N03MSG BSC883N03MSG Infineon Technologies INFNS16416-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 73343 Stücke:
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799+0.63 EUR
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BSC883N03LSG BSC883N03LSG Infineon Technologies INFNS16415-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 14999 Stücke:
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TLE94104EPXUMA1 TLE94104EPXUMA1 Infineon Technologies Infineon-TLE94104EP-DS-v01_00-EN.pdf?fileId=5546d4626176435901618f12747668cf Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
auf Bestellung 2980 Stücke:
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10+2.39 EUR
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100+1.94 EUR
250+1.83 EUR
500+1.76 EUR
1000+1.7 EUR
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SAB-C501G-1EM Infineon Technologies SIEMS040-1.pdf?t.download=true&u=5oefqw Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
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CYW170-01SXC CYW170-01SXC Infineon Technologies Description: IC CLK ZDB 133MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Input: Clock
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP420H6740XTSA1 BFP420H6740XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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BFP420H6740XTSA1 BFP420H6740XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 8086 Stücke:
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24+0.76 EUR
33+0.54 EUR
37+0.48 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.35 EUR
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IRGS4615DTRRPBF IRGS4615DTRRPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
Produkt ist nicht verfügbar
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IPW90R120C3FKSA1 IPW90R120C3FKSA1 Infineon Technologies IPW90R120C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043183a955501185000e1d254f2 Description: MOSFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Produkt ist nicht verfügbar
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DEMOBGT60TR13CTOBO1 DEMOBGT60TR13CTOBO1 Infineon Technologies Infineon-BGT60TR13C_Shield-ApplicationNotes-v02_02-EN.pdf?fileId=8ac78c8c7d0d8da4017d3318e31c2ad6 Description: EVAL BOARD FOR BGT60TR13C
Packaging: Bulk
For Use With/Related Products: BGT60TR13C
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60TR13C
Contents: Board(s)
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BSL716SNH6327XTSA1 BSL716SNH6327XTSA1 Infineon Technologies BSL716SN.pdf Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSL373SNH6327XTSA1 BSL373SNH6327XTSA1 Infineon Technologies BSL373SN.pdf Description: MOSFET N-CH 100V 2A TSOP-6
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BSL806NH6327XTSA1 BSL806NH6327XTSA1 Infineon Technologies Infineon-BSL806N-DS-v02_03-en.pdf?fileId=db3a30431b0626df011b128dcbe37bb1 Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6
Produkt ist nicht verfügbar
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BSZ011NE2LS5IATMA1 BSZ011NE2LS5IATMA1 Infineon Technologies Infineon-BSZ011NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53a6f66852a4 Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 14374 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
10+2.76 EUR
25+2.61 EUR
100+2.4 EUR
250+2.27 EUR
500+2.18 EUR
1000+2.09 EUR
Mindestbestellmenge: 6
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ISK024NE2LM5AULA1 ISK024NE2LM5AULA1 Infineon Technologies Infineon-ISK024NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0 Description: TRENCH <= 40V PG-VSON-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.59 EUR
6000+0.57 EUR
Mindestbestellmenge: 3000
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ISK024NE2LM5AULA1 ISK024NE2LM5AULA1 Infineon Technologies Infineon-ISK024NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0 Description: TRENCH <= 40V PG-VSON-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 7925 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
15+1.17 EUR
100+0.91 EUR
500+0.77 EUR
1000+0.63 EUR
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DDB6U144N16RBPSA1 DDB6U144N16RBPSA1 Infineon Technologies Infineon-DDB6U144N16R-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431590a5413 Description: LOW POWER ECONO AG-ECONO2A-8111
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
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BSC037N08NS5TATMA1 BSC037N08NS5TATMA1 Infineon Technologies Infineon-BSC037N08NS5T-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bd24725382f23 Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
10+4.03 EUR
25+3.59 EUR
100+3.23 EUR
250+2.87 EUR
500+2.52 EUR
1000+2.08 EUR
Mindestbestellmenge: 4
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BAT165E6874HTMA1 BAT165E6874HTMA1 Infineon Technologies bat165series.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313d846880113df01f69804d6 Description: DIODE SCHOTT 40V 750MA PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPA60R520C6XKSA1 IPA60R520C6.pdf
IPA60R520C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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IDH05SG60CXKSA1 Infineon-IDH05SG60C-DS-v02_04-en.pdf?fileId=db3a30431f848401011ff4cebd9a531b
IDH05SG60CXKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 5A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 12303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
147+3.44 EUR
Mindestbestellmenge: 147
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TLE5045ICR050HALA1 Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2
TLE5045ICR050HALA1
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
9+2.13 EUR
10+2.03 EUR
25+1.91 EUR
50+1.82 EUR
100+1.75 EUR
500+1.59 EUR
1000+1.53 EUR
Mindestbestellmenge: 8
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TLE5045ICR050HALA1 Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2
TLE5045ICR050HALA1
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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EVALAUDAMP25TOBO1 Infineon-Evaluation_board_EVAL_AUDAMP25-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7c5627e7017c6f4bbede78fc
EVALAUDAMP25TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR MA5332
auf Bestellung 3 Stücke:
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Anzahl Preis
1+582.56 EUR
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CY8C20424-12LQXIT Infineon-CY8C20224_CY8C20324_CY8C20424_CY8C20524_CAPSENSE_PSOC_PROGRAMMABLE_SYSTEM_ON_CHIP-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecae11743f6
CY8C20424-12LQXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PSB2161TV1.1 SIEMS02152-1.pdf?t.download=true&u=5oefqw
PSB2161TV1.1
Hersteller: Infineon Technologies
Description: ARCOFI-SP AUDIO RINGING CODEC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Audio
Data Interface: Serial
Operating Temperature: -25°C ~ 80°C
Voltage - Supply, Analog: 4.75V ~ 5.25V
Voltage - Supply, Digital: 4.75V ~ 5.25V
Number of ADCs / DACs: 1 / 1
Sigma Delta: No
Supplier Device Package: P-DSO-28
Part Status: Active
auf Bestellung 5954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+16.04 EUR
Mindestbestellmenge: 32
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FS100R12KT4BOSA1 Infineon-FS100R12KT4-DS-v02_00-en_de.pdf?fileId=db3a30431a47d73d011a496e69ba013f
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+194.66 EUR
Mindestbestellmenge: 3
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TLE493DP2B6MS2GOTOBO1 Infineon-3DMS2GO_TLE493D-P2B6-UserManual-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aaa6e84cb0eca
TLE493DP2B6MS2GOTOBO1
Hersteller: Infineon Technologies
Description: TLE493D-P2B6MS2GO KIT
Packaging: Bulk
Sensitivity: 15.4LSB/mT, 7.7LSB/mT
Interface: I2C
Contents: Board(s)
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P2B6, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±160mT
auf Bestellung 3 Stücke:
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Anzahl Preis
1+46.52 EUR
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XMC13S2Q024X0032ABXUMA1
XMC13S2Q024X0032ABXUMA1
Hersteller: Infineon Technologies
Description: 32-BIT INDUSTRIAL MICROCONTROLLE
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
154+3.6 EUR
Mindestbestellmenge: 154
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XMC13S2Q024X0016ABXUMA1
XMC13S2Q024X0016ABXUMA1
Hersteller: Infineon Technologies
Description: XMC13S2 - 32-BIT INDUSTRIAL MICR
auf Bestellung 2646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
154+3.6 EUR
Mindestbestellmenge: 154
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XMC1302T038X0128ABXUMA1
XMC1302T038X0128ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1302T038X0128ABXUMA1
XMC1302T038X0128ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 2845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.77 EUR
10+3.56 EUR
25+3.26 EUR
100+2.93 EUR
250+2.77 EUR
500+2.67 EUR
1000+2.59 EUR
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XMC1302T028X0016ABXUMA1 Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T028X0016ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.72 EUR
Mindestbestellmenge: 3000
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XMC1302T028X0016ABXUMA1 Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T028X0016ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.73 EUR
25+2.49 EUR
100+2.23 EUR
250+2.11 EUR
500+2.03 EUR
1000+1.97 EUR
Mindestbestellmenge: 5
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TLD22522RCLEVALTOBO1 Infineon-TLD2252-2_RCL_EVAL-UserManual-v01_00-EN.pdf?fileId=5546d4627645f8770176614d153c185a
TLD22522RCLEVALTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD2252-2EP
Packaging: Bulk
Voltage - Input: 8V ~ 16V
Contents: Board(s)
Current - Output / Channel: 120mA
Utilized IC / Part: TLD2252-2EP
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+192.17 EUR
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IPP065N03LGXKSA1 IPP065N03L_rev1.02.pdf?folderId=db3a30431441fb5d01148c401f250e27&fileId=db3a30431441fb5d011492371ebc0fe2
IPP065N03LGXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
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EVALIM67D130FLEXKITTOBO1 Infineon-Microphoneflexevaluationkit-ProductBrief-v01_01-EN.pdf?fileId=5546d4626f229553016fa43619613de2
EVALIM67D130FLEXKITTOBO1
Hersteller: Infineon Technologies
Description: EVAL KIT FOR IM67D130
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM67D130
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.6 EUR
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BCR431UXTSA1 Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a
BCR431UXTSA1
Hersteller: Infineon Technologies
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
Mindestbestellmenge: 3000
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BCR431UXTSA1 Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a
BCR431UXTSA1
Hersteller: Infineon Technologies
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
auf Bestellung 6935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
43+0.42 EUR
48+0.37 EUR
100+0.32 EUR
250+0.29 EUR
500+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 30
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TTB6C95N16LOF INFNS20693-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
auf Bestellung 236 Stücke:
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Anzahl Preis
3+170.85 EUR
Mindestbestellmenge: 3
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BTS54220LBAAUMA1 Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051
BTS54220LBAAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS54220LBAAUMA1 Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051
BTS54220LBAAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS54220LBEAUMA1 BTS54220-LBE.pdf
BTS54220LBEAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Produkt ist nicht verfügbar
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BTS54220LBFAUMA1 Part_Number_Guide_Web.pdf
BTS54220LBFAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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IDP12E120XKSA1390 Infineon-IDP12E120-DS-v02_03-en.pdf?fileId=db3a30432313ff5e012374c3dade485b
IDP12E120XKSA1390
Hersteller: Infineon Technologies
Description: IDP12E120 - SILICON POWER DIODE
Produkt ist nicht verfügbar
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WLC1115-68LQXQ Infineon-WLC1115_Wireless_charging_IC_WLC_-_Transmitter_15W_with_integrated_USB_Type-C_PD_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c80027ecd0180927a72421cd6
WLC1115-68LQXQ
Hersteller: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.13 EUR
10+6.98 EUR
25+6.44 EUR
80+5.93 EUR
230+5.59 EUR
Mindestbestellmenge: 2
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WLC1115-68LQXQT Infineon-WLC1115_Wireless_charging_IC_WLC_-_Transmitter_15W_with_integrated_USB_Type-C_PD_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c80027ecd0180927a72421cd6
WLC1115-68LQXQT
Hersteller: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.72 EUR
Mindestbestellmenge: 2000
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WLC1115-68LQXQT Infineon-WLC1115_Wireless_charging_IC_WLC_-_Transmitter_15W_with_integrated_USB_Type-C_PD_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c80027ecd0180927a72421cd6
WLC1115-68LQXQT
Hersteller: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
auf Bestellung 2409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.38 EUR
10+6.41 EUR
25+5.92 EUR
100+5.37 EUR
250+5.11 EUR
500+4.96 EUR
1000+4.83 EUR
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IPS80R1K4P7 INFN-S-A0004583388-1.pdf?t.download=true&u=5oefqw
IPS80R1K4P7
Hersteller: Infineon Technologies
Description: IPS80R1K4 - 800V COOLMOS N-CHANN
Produkt ist nicht verfügbar
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IPS80R750P7AKMA1 Infineon-IPS80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedb79d591183
IPS80R750P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO251-3
auf Bestellung 2880 Stücke:
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Anzahl Preis
420+1.3 EUR
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IPS80R2K4P7AKMA1 Infineon-IPS80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ced92d89f1179
IPS80R2K4P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
auf Bestellung 2945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
848+0.57 EUR
Mindestbestellmenge: 848
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FZ1600R17HP4_B21 INFN-S-A0001441407-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FZ1600R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
auf Bestellung 10 Stücke:
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Anzahl Preis
1+1707.83 EUR
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SAB-80C515A-N18 INFNS25460-1.pdf?t.download=true&u=5oefqw
SAB-80C515A-N18
Hersteller: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 18MHz
RAM Size: 1.25K x 8
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: 80C515
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: P-LCC-68
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPF05N03LAG INFNS12007-1.pdf?t.download=true&u=5oefqw
IPF05N03LAG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
547+0.93 EUR
Mindestbestellmenge: 547
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PEB2235PV4.1IPAT SIEMD00111-158.pdf?t.download=true&u=5oefqw
PEB2235PV4.1IPAT
Hersteller: Infineon Technologies
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 190mA
Supplier Device Package: P-DIP-28
Part Status: Active
Number of Circuits: 32
auf Bestellung 84 Stücke:
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Anzahl Preis
17+28.42 EUR
Mindestbestellmenge: 17
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PEB2075PV1.3-IDEC SIEMS02116-1.pdf?t.download=true&u=5oefqw
PEB2075PV1.3-IDEC
Hersteller: Infineon Technologies
Description: ISDN D-CHANNEL EXCH. CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 10mA
Supplier Device Package: P-DIP-28
Part Status: Active
auf Bestellung 1822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+35.44 EUR
Mindestbestellmenge: 14
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TLS810D1EJV33XUMA1 Infineon-TLS810D1xxV33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101592101892b367d
TLS810D1EJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
auf Bestellung 4067 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
10+1.81 EUR
25+1.65 EUR
100+1.46 EUR
250+1.37 EUR
500+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 8
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BSC883N03LS G INFNS16415-1.pdf?t.download=true&u=5oefqw
BSC883N03LS G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
916+0.58 EUR
Mindestbestellmenge: 916
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BSC026N02KSG INFNS16144-1.pdf?t.download=true&u=5oefqw
BSC026N02KSG
Hersteller: Infineon Technologies
Description: BSC026N02 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
auf Bestellung 27190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
363+1.46 EUR
Mindestbestellmenge: 363
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BSC0503NSIATMA1 Infineon-BSC0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f026ba60b3c73
BSC0503NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 9378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
11+1.76 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.85 EUR
2000+0.78 EUR
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BSC883N03MSG INFNS16416-1.pdf?t.download=true&u=5oefqw
BSC883N03MSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 73343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
799+0.63 EUR
Mindestbestellmenge: 799
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BSC883N03LSG INFNS16415-1.pdf?t.download=true&u=5oefqw
BSC883N03LSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 14999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
916+0.56 EUR
Mindestbestellmenge: 916
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TLE94104EPXUMA1 Infineon-TLE94104EP-DS-v01_00-EN.pdf?fileId=5546d4626176435901618f12747668cf
TLE94104EPXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
10+2.39 EUR
25+2.17 EUR
100+1.94 EUR
250+1.83 EUR
500+1.76 EUR
1000+1.7 EUR
Mindestbestellmenge: 6
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SAB-C501G-1EM SIEMS040-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
74+6.66 EUR
Mindestbestellmenge: 74
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CYW170-01SXC
CYW170-01SXC
Hersteller: Infineon Technologies
Description: IC CLK ZDB 133MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Input: Clock
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP420H6740XTSA1 BFP420_Rev2013.pdf
BFP420H6740XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
Mindestbestellmenge: 3000
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BFP420H6740XTSA1 BFP420_Rev2013.pdf
BFP420H6740XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 8086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
37+0.48 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.35 EUR
Mindestbestellmenge: 24
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IRGS4615DTRRPBF IRGx4615DPbF.pdf
IRGS4615DTRRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
Produkt ist nicht verfügbar
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IPW90R120C3FKSA1 IPW90R120C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043183a955501185000e1d254f2
IPW90R120C3FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Produkt ist nicht verfügbar
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DEMOBGT60TR13CTOBO1 Infineon-BGT60TR13C_Shield-ApplicationNotes-v02_02-EN.pdf?fileId=8ac78c8c7d0d8da4017d3318e31c2ad6
DEMOBGT60TR13CTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BGT60TR13C
Packaging: Bulk
For Use With/Related Products: BGT60TR13C
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60TR13C
Contents: Board(s)
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+339.56 EUR
10+338.77 EUR
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BSL716SNH6327XTSA1 BSL716SN.pdf
BSL716SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSL373SNH6327XTSA1 BSL373SN.pdf
BSL373SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 2A TSOP-6
Produkt ist nicht verfügbar
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BSL806NH6327XTSA1 Infineon-BSL806N-DS-v02_03-en.pdf?fileId=db3a30431b0626df011b128dcbe37bb1
BSL806NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6
Produkt ist nicht verfügbar
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BSZ011NE2LS5IATMA1 Infineon-BSZ011NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53a6f66852a4
BSZ011NE2LS5IATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 14374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.76 EUR
25+2.61 EUR
100+2.4 EUR
250+2.27 EUR
500+2.18 EUR
1000+2.09 EUR
Mindestbestellmenge: 6
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ISK024NE2LM5AULA1 Infineon-ISK024NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0
ISK024NE2LM5AULA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.59 EUR
6000+0.57 EUR
Mindestbestellmenge: 3000
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ISK024NE2LM5AULA1 Infineon-ISK024NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0
ISK024NE2LM5AULA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 7925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
15+1.17 EUR
100+0.91 EUR
500+0.77 EUR
1000+0.63 EUR
Mindestbestellmenge: 13
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DDB6U144N16RBPSA1 Infineon-DDB6U144N16R-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b431590a5413
DDB6U144N16RBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-8111
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Produkt ist nicht verfügbar
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BSC037N08NS5TATMA1 Infineon-BSC037N08NS5T-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bd24725382f23
BSC037N08NS5TATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+4.03 EUR
25+3.59 EUR
100+3.23 EUR
250+2.87 EUR
500+2.52 EUR
1000+2.08 EUR
Mindestbestellmenge: 4
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BAT165E6874HTMA1 bat165series.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313d846880113df01f69804d6
BAT165E6874HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 750MA PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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