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BSV236SP L6327 BSV236SP L6327 Infineon Technologies BSV236SP_211201.pdf Description: MOSFET P-CH 20V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 560mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 8µA
Supplier Device Package: PG-SOT363-PO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
Produkt ist nicht verfügbar
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FF600R12ME4B11BPSA2 Infineon Technologies Infineon-FF600R12ME4_B11-DS-v02_01-EN.pdf?fileId=db3a30432fbc32ee012fc06c339a3a96 Description: MEDIUM POWER ECONO AG-ECONOD-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 995 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4AB11BPSA1 Infineon Technologies Infineon-FF600R12ME4A_B11-DS-v03_00-EN.pdf?fileId=5546d4624fb7fef2014fbb1024b53ea1 Description: MEDIUM POWER ECONO AG-ECONOD-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4B73BPSA2 Infineon Technologies Infineon-FF600R12ME4_B73-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94b7a3232e2d Description: MEDIUM POWER ECONO AG-ECONOD-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4CB11BPSA1 Infineon Technologies Infineon-FF600R12ME4C_B11-DS-v03_00-EN.pdf?fileId=db3a304342c787030142c88033be008d Description: MEDIUM POWER ECONO AG-ECONOD-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1060 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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BSZ130N03MSG BSZ130N03MSG Infineon Technologies INFNS16248-1.pdf?t.download=true&u=5oefqw Description: BSZ130N03 - 12V-300V N-CHANNEL P
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BSF134N10NJ3G Infineon Technologies INFNS28779-1.pdf?t.download=true&u=5oefqw Description: BSF134N10 - 12V-300V N-CHANNEL P
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IST015N06NM5AUMA1 IST015N06NM5AUMA1 Infineon Technologies Infineon-IST015N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd0180cc0f7f271ff9 Description: OPTIMOS 5 POWER MOSFET 60 V
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
Produkt ist nicht verfügbar
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IST015N06NM5AUMA1 IST015N06NM5AUMA1 Infineon Technologies Infineon-IST015N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd0180cc0f7f271ff9 Description: OPTIMOS 5 POWER MOSFET 60 V
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
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IRF9910TRPBF-1 IRF9910TRPBF-1 Infineon Technologies IRF9910TRPbF-1_10-16-14.pdf Description: MOSFET 2N-CH 20V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, 1860pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SLB9660TT12FW443XUMA2 SLB9660TT12FW443XUMA2 Infineon Technologies Description: SLB9660 - OPTIGA EMBEDDED SECURI
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-TSSOP-28-2
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR3590BMTRPBF Infineon Technologies pb-ir3590b.pdf?fileId=5546d462533600a4015356807f7a2901 Description: IC REG CTLR BUCK I2C 40QFN
Packaging: Bulk
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: 40-QFN (5x5)
Synchronous Rectifier: No
Serial Interfaces: I2C
Output Phases: 6
Clock Sync: No
Number of Outputs: 6
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IR3590MIB01TRP IR3590MIB01TRP Infineon Technologies IR3590_v2.05_2-4-14.pdf Description: IC REG BUCK 40VQFN
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FS450R17KE3BOSA1 FS450R17KE3BOSA1 Infineon Technologies Infineon-FS450R17KE3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b42fec154e54 Description: IGBT MOD 1700V 605A 2250W
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FS450R17KE3BOSA1 FS450R17KE3BOSA1 Infineon Technologies Infineon-FS450R17KE3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b42fec154e54 Description: IGBT MOD 1700V 605A 2250W
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EB01FS450R17KE3NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
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D1800N44TVFXPSA1 D1800N44TVFXPSA1 Infineon Technologies D1800N.pdf Description: DIODE GEN PURP 4400V 1800A
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D1800N44TVFXPSA1 D1800N44TVFXPSA1 Infineon Technologies D1800N.pdf Description: DIODE GEN PURP 4400V 1800A
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D690S20TXPSA1 D690S20TXPSA1 Infineon Technologies Infineon-D690S-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc201240a2b364b4794 Description: DIODE GEN PURP 2KV 690A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 µs
Technology: Standard
Current - Average Rectified (Io): 690A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 25 mA @ 2000 V
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TLS850C2TEV33BOARDTOBO1 TLS850C2TEV33BOARDTOBO1 Infineon Technologies Infineon-Z8F66743815_TLS850C2TEVxx_Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46277fc74390177fd55e7960c41 Description: TLS850C2TE V33 BOARD
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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AUIRG4BC30SSTRL AUIRG4BC30SSTRL Infineon Technologies auirg4bc30s-s.pdf?fileId=5546d462533600a4015355ba1a451513 Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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AUIRG4BC30SSTRL AUIRG4BC30SSTRL Infineon Technologies auirg4bc30s-s.pdf?fileId=5546d462533600a4015355ba1a451513 Description: IGBT 600V 34A 100W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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IPW50R280CE IPW50R280CE Infineon Technologies INFN-S-A0002263215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
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CY14V101LA-BA25XI CY14V101LA-BA25XI Infineon Technologies download Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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IPW90R1K2C3FKSA1 IPW90R1K2C3FKSA1 Infineon Technologies ipw90r1k2c3_1.0.pdf_folderid=db3a3043156fd5730115c736bcc70ff2&fileid=db3a3043183a955501184ffdc4fc54e2.pdf Description: IPW90R1 - 900V COOLMOS N-CHANNEL
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IMBG65R260M1HXTMA1 IMBG65R260M1HXTMA1 Infineon Technologies Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
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IMBG65R260M1HXTMA1 IMBG65R260M1HXTMA1 Infineon Technologies Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
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10+4.70 EUR
100+3.39 EUR
500+3.18 EUR
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BAT60BE6359HTMA1 BAT60BE6359HTMA1 Infineon Technologies Infineon-BAT60BSERIES-DS-v01_01-en.pdf Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Qualification: AEC-Q101
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FS15R06XL4BOMA1 FS15R06XL4BOMA1 Infineon Technologies Description: IGBT MODULE 600V 20A 81W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 675 pF @ 25 V
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2SC0108T2H017HPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
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KP276C1505XTMA1 KP276C1505XTMA1 Infineon Technologies Infineon-KP276C1505-DataSheet-v01_01-EN.pdf?fileId=5546d4626afcd350016b0408b0ec7182 Description: INTEGRATED PRESSURE SENS
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IPB052N04NGATMA1 IPB052N04NGATMA1 Infineon Technologies IPB052N04N_G.pdf Description: MOSFET N-CH 40V 70A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V
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KP276D1505XTMA1 Infineon Technologies Description: PRESSURE SENSOR 8DSOF
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BCR35PNH6327XTSA1 BCR35PNH6327XTSA1 Infineon Technologies bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff Description: TRANS PREBIAS NPN/PNP 50V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
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SAK-XE161FU8F40VAAKXUMA1 SAK-XE161FU8F40VAAKXUMA1 Infineon Technologies INFNS17109-1.pdf?t.download=true&u=5oefqw Description: 16 BIT FLASH RISC MICROCONTROLLE
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SAK-XC2723X-20F66VAA SAK-XC2723X-20F66VAA Infineon Technologies INFNS16641-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MICROCONTROLLER - XC
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SAK-XE161FL-20F66VAA SAK-XE161FL-20F66VAA Infineon Technologies INFNS17109-1.pdf?t.download=true&u=5oefqw Description: XE161 - 16-BIT FLASH RISC MICROC
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XMC1403Q048X0064AAXUMA1 XMC1403Q048X0064AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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XMC1403Q048X0064AAXUMA1 XMC1403Q048X0064AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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TLE9879QXW40XUMA2 Infineon Technologies Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
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TLE9879QXW40XUMA2 Infineon Technologies Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
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TLE9877QXW40XUMA2 Infineon Technologies Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
Grade: Automotive
DigiKey Programmable: Not Verified
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TLE9877QXW40XUMA2 Infineon Technologies Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
Grade: Automotive
DigiKey Programmable: Not Verified
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TLE9877QXA40XUMA3 TLE9877QXA40XUMA3 Infineon Technologies Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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2500+5.51 EUR
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TLE9877QXA40XUMA3 TLE9877QXA40XUMA3 Infineon Technologies Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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100+6.30 EUR
250+6.00 EUR
500+5.82 EUR
1000+5.67 EUR
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IPI120N06S4H1AKSA2 IPI120N06S4H1AKSA2 Infineon Technologies Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
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IAUA200N04S5N010ATMA1 IAUA200N04S5N010ATMA1 Infineon Technologies Infineon-IAUA200N04S5N010-DS-v01_10-EN.pdf?fileId=5546d462647040d101647051b3671ed1 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Qualification: AEC-Q101
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BSC200P03LSG BSC200P03LSG Infineon Technologies INFNS16204-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
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ISC012N04NM6ATMA1 ISC012N04NM6ATMA1 Infineon Technologies Infineon-ISC012N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d7a9f746c5301 Description: TRENCH <= 40V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
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ISC012N04NM6ATMA1 ISC012N04NM6ATMA1 Infineon Technologies Infineon-ISC012N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d7a9f746c5301 Description: TRENCH <= 40V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
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10+2.50 EUR
100+1.73 EUR
500+1.38 EUR
1000+1.35 EUR
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IPD30N06S223ATMA2 IPD30N06S223ATMA2 Infineon Technologies Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba1b5d61&ack=t Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Qualification: AEC-Q101
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IPD30N06S223ATMA2 IPD30N06S223ATMA2 Infineon Technologies Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba1b5d61&ack=t Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Qualification: AEC-Q101
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12+1.55 EUR
100+1.08 EUR
500+0.93 EUR
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BTS244ZE3043 BTS244ZE3043 Infineon Technologies INFNS27930-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
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BTS244Z Infineon Technologies INFNS14869-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 3447 Stücke:
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BTS244ZAKSA1 Infineon Technologies INFNS14869-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Produkt ist nicht verfügbar
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CYW4329EKUBGT Infineon Technologies BCM4329_RevF_Sep19%2C2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Power - Output: 11dBm
Data Rate (Max): 72.2Mbps
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 9
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE75602ESHXUMA1 TLE75602ESHXUMA1 Infineon Technologies Infineon-TLE75602-ESH-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099afcdc78fe Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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3000+1.92 EUR
6000+1.89 EUR
Mindestbestellmenge: 3000
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TLE75602ESHXUMA1 TLE75602ESHXUMA1 Infineon Technologies Infineon-TLE75602-ESH-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099afcdc78fe Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 6224 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+2.77 EUR
25+2.53 EUR
100+2.26 EUR
250+2.14 EUR
500+2.06 EUR
1000+2.00 EUR
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TLE72722DATMA1 TLE72722DATMA1 Infineon Technologies Infineon-TLE7272-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d6e8763ee2 Description: IC REG LIN 5V 300MA PG-TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE72722DATMA1 TLE72722DATMA1 Infineon Technologies Infineon-TLE7272-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d6e8763ee2 Description: IC REG LIN 5V 300MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
auf Bestellung 1957 Stücke:
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5+4.15 EUR
10+3.09 EUR
25+2.82 EUR
100+2.53 EUR
250+2.39 EUR
500+2.31 EUR
1000+2.24 EUR
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BSV236SP L6327 BSV236SP_211201.pdf
BSV236SP L6327
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 560mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 8µA
Supplier Device Package: PG-SOT363-PO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 15 V
Produkt ist nicht verfügbar
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FF600R12ME4B11BPSA2 Infineon-FF600R12ME4_B11-DS-v02_01-EN.pdf?fileId=db3a30432fbc32ee012fc06c339a3a96
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 995 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4AB11BPSA1 Infineon-FF600R12ME4A_B11-DS-v03_00-EN.pdf?fileId=5546d4624fb7fef2014fbb1024b53ea1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4B73BPSA2 Infineon-FF600R12ME4_B73-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94b7a3232e2d
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4CB11BPSA1 Infineon-FF600R12ME4C_B11-DS-v03_00-EN.pdf?fileId=db3a304342c787030142c88033be008d
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1060 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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BSZ130N03MSG INFNS16248-1.pdf?t.download=true&u=5oefqw
BSZ130N03MSG
Hersteller: Infineon Technologies
Description: BSZ130N03 - 12V-300V N-CHANNEL P
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BSF134N10NJ3G INFNS28779-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BSF134N10 - 12V-300V N-CHANNEL P
auf Bestellung 7476 Stücke:
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Anzahl Preis
317+1.61 EUR
Mindestbestellmenge: 317
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IST015N06NM5AUMA1 Infineon-IST015N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd0180cc0f7f271ff9
IST015N06NM5AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET 60 V
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
Produkt ist nicht verfügbar
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IST015N06NM5AUMA1 Infineon-IST015N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c80027ecd0180cc0f7f271ff9
IST015N06NM5AUMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET 60 V
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.67 EUR
10+7.17 EUR
100+5.24 EUR
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IRF9910TRPBF-1 IRF9910TRPbF-1_10-16-14.pdf
IRF9910TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, 1860pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SLB9660TT12FW443XUMA2
SLB9660TT12FW443XUMA2
Hersteller: Infineon Technologies
Description: SLB9660 - OPTIGA EMBEDDED SECURI
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-TSSOP-28-2
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR3590BMTRPBF pb-ir3590b.pdf?fileId=5546d462533600a4015356807f7a2901
Hersteller: Infineon Technologies
Description: IC REG CTLR BUCK I2C 40QFN
Packaging: Bulk
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: 40-QFN (5x5)
Synchronous Rectifier: No
Serial Interfaces: I2C
Output Phases: 6
Clock Sync: No
Number of Outputs: 6
auf Bestellung 2924 Stücke:
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77+6.57 EUR
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IR3590MIB01TRP IR3590_v2.05_2-4-14.pdf
IR3590MIB01TRP
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Produkt ist nicht verfügbar
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FS450R17KE3BOSA1 Infineon-FS450R17KE3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b42fec154e54
FS450R17KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 605A 2250W
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Anzahl Preis
1+1676.21 EUR
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FS450R17KE3BOSA1 Infineon-FS450R17KE3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b42fec154e54
FS450R17KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 605A 2250W
Produkt ist nicht verfügbar
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EB01FS450R17KE3NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
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D1800N44TVFXPSA1 D1800N.pdf
D1800N44TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4400V 1800A
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1+730.63 EUR
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D1800N44TVFXPSA1 D1800N.pdf
D1800N44TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4400V 1800A
Produkt ist nicht verfügbar
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D690S20TXPSA1 Infineon-D690S-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc201240a2b364b4794
D690S20TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2KV 690A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 µs
Technology: Standard
Current - Average Rectified (Io): 690A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 25 mA @ 2000 V
Produkt ist nicht verfügbar
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TLS850C2TEV33BOARDTOBO1 Infineon-Z8F66743815_TLS850C2TEVxx_Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46277fc74390177fd55e7960c41
TLS850C2TEV33BOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS850C2TE V33 BOARD
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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Anzahl Preis
1+87.26 EUR
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AUIRG4BC30SSTRL auirg4bc30s-s.pdf?fileId=5546d462533600a4015355ba1a451513
AUIRG4BC30SSTRL
Hersteller: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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AUIRG4BC30SSTRL auirg4bc30s-s.pdf?fileId=5546d462533600a4015355ba1a451513
AUIRG4BC30SSTRL
Hersteller: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IPW50R280CE INFN-S-A0002263215-1.pdf?t.download=true&u=5oefqw
IPW50R280CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
auf Bestellung 101641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
392+1.28 EUR
Mindestbestellmenge: 392
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CY14V101LA-BA25XI download
CY14V101LA-BA25XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Bulk
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1604 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+36.96 EUR
Mindestbestellmenge: 15
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IPW90R1K2C3FKSA1 ipw90r1k2c3_1.0.pdf_folderid=db3a3043156fd5730115c736bcc70ff2&fileid=db3a3043183a955501184ffdc4fc54e2.pdf
IPW90R1K2C3FKSA1
Hersteller: Infineon Technologies
Description: IPW90R1 - 900V COOLMOS N-CHANNEL
Produkt ist nicht verfügbar
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IMBG65R260M1HXTMA1 Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656
IMBG65R260M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R260M1HXTMA1 Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656
IMBG65R260M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.11 EUR
10+4.70 EUR
100+3.39 EUR
500+3.18 EUR
Mindestbestellmenge: 3
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BAT60BE6359HTMA1 Infineon-BAT60BSERIES-DS-v01_01-en.pdf
BAT60BE6359HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FS15R06XL4BOMA1
FS15R06XL4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 20A 81W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 675 pF @ 25 V
Produkt ist nicht verfügbar
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2SC0108T2H017HPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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KP276C1505XTMA1 Infineon-KP276C1505-DataSheet-v01_01-EN.pdf?fileId=5546d4626afcd350016b0408b0ec7182
KP276C1505XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
auf Bestellung 1389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
87+6.36 EUR
Mindestbestellmenge: 87
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IPB052N04NGATMA1 IPB052N04N_G.pdf
IPB052N04NGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 20 V
Produkt ist nicht verfügbar
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KP276D1505XTMA1
Hersteller: Infineon Technologies
Description: PRESSURE SENSOR 8DSOF
Produkt ist nicht verfügbar
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BCR35PNH6327XTSA1 bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff
BCR35PNH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN/PNP 50V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
auf Bestellung 291000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4116+0.12 EUR
Mindestbestellmenge: 4116
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SAK-XE161FU8F40VAAKXUMA1 INFNS17109-1.pdf?t.download=true&u=5oefqw
SAK-XE161FU8F40VAAKXUMA1
Hersteller: Infineon Technologies
Description: 16 BIT FLASH RISC MICROCONTROLLE
Produkt ist nicht verfügbar
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SAK-XC2723X-20F66VAA INFNS16641-1.pdf?t.download=true&u=5oefqw
SAK-XC2723X-20F66VAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MICROCONTROLLER - XC
Produkt ist nicht verfügbar
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SAK-XE161FL-20F66VAA INFNS17109-1.pdf?t.download=true&u=5oefqw
SAK-XE161FL-20F66VAA
Hersteller: Infineon Technologies
Description: XE161 - 16-BIT FLASH RISC MICROC
Produkt ist nicht verfügbar
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XMC1403Q048X0064AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q048X0064AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.68 EUR
Mindestbestellmenge: 2500
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XMC1403Q048X0064AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q048X0064AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 5239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.05 EUR
10+3.78 EUR
25+3.46 EUR
100+3.12 EUR
250+2.95 EUR
500+2.85 EUR
1000+2.77 EUR
Mindestbestellmenge: 4
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TLE9879QXW40XUMA2 Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Produkt ist nicht verfügbar
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TLE9879QXW40XUMA2 Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
auf Bestellung 2357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.56 EUR
Mindestbestellmenge: 3
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TLE9877QXW40XUMA2 Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
Grade: Automotive
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+5.63 EUR
Mindestbestellmenge: 2500
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TLE9877QXW40XUMA2 Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
Grade: Automotive
DigiKey Programmable: Not Verified
auf Bestellung 4901 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.20 EUR
10+6.19 EUR
Mindestbestellmenge: 3
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TLE9877QXA40XUMA3 Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab
TLE9877QXA40XUMA3
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+5.51 EUR
Mindestbestellmenge: 2500
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TLE9877QXA40XUMA3 Infineon-TLE987x_UM-UserManual-v01_08-EN.pdf?fileId=8ac78c8c81ae03fc0181d38669525fab
TLE9877QXA40XUMA3
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.80 EUR
10+7.50 EUR
25+6.93 EUR
100+6.30 EUR
250+6.00 EUR
500+5.82 EUR
1000+5.67 EUR
Mindestbestellmenge: 2
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IPI120N06S4H1AKSA2 Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf
IPI120N06S4H1AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Produkt ist nicht verfügbar
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IAUA200N04S5N010ATMA1 Infineon-IAUA200N04S5N010-DS-v01_10-EN.pdf?fileId=5546d462647040d101647051b3671ed1
IAUA200N04S5N010ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSC200P03LSG INFNS16204-1.pdf?t.download=true&u=5oefqw
BSC200P03LSG
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
auf Bestellung 13641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
751+0.70 EUR
Mindestbestellmenge: 751
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ISC012N04NM6ATMA1 Infineon-ISC012N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d7a9f746c5301
ISC012N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.19 EUR
Mindestbestellmenge: 5000
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ISC012N04NM6ATMA1 Infineon-ISC012N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d718a49017d7a9f746c5301
ISC012N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
auf Bestellung 12658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
10+2.50 EUR
100+1.73 EUR
500+1.38 EUR
1000+1.35 EUR
Mindestbestellmenge: 5
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IPD30N06S223ATMA2 Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba1b5d61&ack=t
IPD30N06S223ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD30N06S223ATMA2 Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba1b5d61&ack=t
IPD30N06S223ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
12+1.55 EUR
100+1.08 EUR
500+0.93 EUR
1000+0.85 EUR
Mindestbestellmenge: 10
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BTS244ZE3043 INFNS27930-1.pdf?t.download=true&u=5oefqw
BTS244ZE3043
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
auf Bestellung 4726 Stücke:
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104+4.64 EUR
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BTS244Z INFNS14869-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 3447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
181+2.92 EUR
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BTS244ZAKSA1 INFNS14869-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Produkt ist nicht verfügbar
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CYW4329EKUBGT BCM4329_RevF_Sep19%2C2016.pdf
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Power - Output: 11dBm
Data Rate (Max): 72.2Mbps
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 9
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE75602ESHXUMA1 Infineon-TLE75602-ESH-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099afcdc78fe
TLE75602ESHXUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.92 EUR
6000+1.89 EUR
Mindestbestellmenge: 3000
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TLE75602ESHXUMA1 Infineon-TLE75602-ESH-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099afcdc78fe
TLE75602ESHXUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 6224 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.77 EUR
25+2.53 EUR
100+2.26 EUR
250+2.14 EUR
500+2.06 EUR
1000+2.00 EUR
Mindestbestellmenge: 5
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TLE72722DATMA1 Infineon-TLE7272-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d6e8763ee2
TLE72722DATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE72722DATMA1 Infineon-TLE7272-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9d6e8763ee2
TLE72722DATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
auf Bestellung 1957 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.15 EUR
10+3.09 EUR
25+2.82 EUR
100+2.53 EUR
250+2.39 EUR
500+2.31 EUR
1000+2.24 EUR
Mindestbestellmenge: 5
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