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BSC014N03LSGATMA1 BSC014N03LSGATMA1 Infineon Technologies BSC014N03LS_rev1.3.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a30431be39b97011c23384f5d77fb Description: MOSFET N-CH 30V 34A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
Produkt ist nicht verfügbar
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S29AL008J70BFM023 S29AL008J70BFM023 Infineon Technologies Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 8MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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S29AL008J70TFA023 S29AL008J70TFA023 Infineon Technologies Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 8MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL256S10DHSS50 S29GL256S10DHSS50 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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IPA90R1K0C3XKSA1 IPA90R1K0C3XKSA1 Infineon Technologies IPA90R1K0C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8cbbbc490f94 Description: MOSFET N-CH 900V 5.7A TO220-FP
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IDD10SG60CXTMA2 IDD10SG60CXTMA2 Infineon Technologies Infineon-IDD10SG60C-DS-v02_04-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304327b897500127dd77c6a21abe Description: DIODE SIL CARB 600V 10A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
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IDD10SG60CXTMA2 IDD10SG60CXTMA2 Infineon Technologies Infineon-IDD10SG60C-DS-v02_04-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304327b897500127dd77c6a21abe Description: DIODE SIL CARB 600V 10A PGTO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
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IRLL1503 IRLL1503 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 75A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V
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IRFS7537PBF IRFS7537PBF Infineon Technologies irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb Description: MOSFET N CH 60V 173A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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TT700N22KOFHPSA1 TT700N22KOFHPSA1 Infineon Technologies Infineon-TT700N22KOF-DataSheet-v03_02-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6 Description: THYR / DIODE MODULE DK
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TT700N22KOFHPSA1 TT700N22KOFHPSA1 Infineon Technologies Infineon-TT700N22KOF-DataSheet-v03_02-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6 Description: THYR / DIODE MODULE DK
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T4771N22TOFXPSA1 T4771N22TOFXPSA1 Infineon Technologies Infineon-T4771N-DS-v09_00-en_de.pdf?fileId=db3a304412b407950112b42ffe5c4e94 Description: SCR MODULE 2900V 6820A DO200AE
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TDA5212XUMA1 TDA5212XUMA1 Infineon Technologies TDA5212.pdf Description: RF RX ASK/FSK 902-928MHZ 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 902MHz ~ 928MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 5.4mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
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IRFP4368PBF IRFP4368PBF Infineon Technologies irfp4368pbf.pdf?fileId=5546d462533600a40153562c61512015 description Description: MOSFET N-CH 75V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 195A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19230 pF @ 50 V
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TLE4254EJSXUMA2 TLE4254EJSXUMA2 Infineon Technologies Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6 Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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TLE4254EJAXUMA2 TLE4254EJAXUMA2 Infineon Technologies Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6 Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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S29GL01GT11FHV010 S29GL01GT11FHV010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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ESD208-B1-02ELSE6327 ESD208-B1-02ELSE6327 Infineon Technologies INFN-S-A0000321166-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
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MB91F467SAPMC-GS-N2K5E2 MB91F467SAPMC-GS-N2K5E2 Infineon Technologies Description: IC MCU 32B 1.0625MB FLSH 176LQFP
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MB91F467TAPMC-GS-N2K5E2 MB91F467TAPMC-GS-N2K5E2 Infineon Technologies Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 109
DigiKey Programmable: Not Verified
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CY91F467CBPMCR-GS-UJE2 CY91F467CBPMCR-GS-UJE2 Infineon Technologies download Description: IC MCU 32B 1.0625MB FLSH 144LQFP
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S29GL128S90TFA020 S29GL128S90TFA020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S90TFA010 S29GL128S90TFA010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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TLE4254EJS TLE4254EJS Infineon Technologies Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6 Description: TLE4254 - LINEAR VOLTAGE REGULAT
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TLE4254EJA TLE4254EJA Infineon Technologies Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6 Description: TLE4254 - LINEAR VOLTAGE REGULAT
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BGT60ATR24CE6327XTMA1 BGT60ATR24CE6327XTMA1 Infineon Technologies Infineon-BGT60ATR24C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ff9f022017ffec84fa40aa2 Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Output Type: Digital
Operating Temperature: -40°C ~ 145°C (TJ)
Sensor Type: Radar Sensor
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BGT60ATR24CE6327XTMA1 BGT60ATR24CE6327XTMA1 Infineon Technologies Infineon-BGT60ATR24C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ff9f022017ffec84fa40aa2 Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Output Type: Digital
Operating Temperature: -40°C ~ 145°C (TJ)
Sensor Type: Radar Sensor
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IPD25N06S240ATMA2 IPD25N06S240ATMA2 Infineon Technologies Infineon-IPD25N06S2_40-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433b9ae5d5d&ack=t Description: MOSFET N-CH 55V 29A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
Qualification: AEC-Q101
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IPD25N06S240ATMA2 IPD25N06S240ATMA2 Infineon Technologies Infineon-IPD25N06S2_40-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433b9ae5d5d&ack=t Description: MOSFET N-CH 55V 29A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
Qualification: AEC-Q101
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1EDN7116GXTMA1 1EDN7116GXTMA1 Infineon Technologies Infineon-DS_1EDN71x6G-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7c9758f2017ca3b96d9b77a6 Description: IC GATE DRVR HI/LOW SIDE 10VFDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.2V ~ 11V
Input Type: Non-Inverting
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
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1EDN7116GXTMA1 1EDN7116GXTMA1 Infineon Technologies Infineon-DS_1EDN71x6G-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7c9758f2017ca3b96d9b77a6 Description: IC GATE DRVR HI/LOW SIDE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.2V ~ 11V
Input Type: Non-Inverting
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
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D650S12TXPSA1 D650S12TXPSA1 Infineon Technologies D650S.pdf Description: DIODE GEN PURP 1.2KV 620A
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D650S14TXPSA1 D650S14TXPSA1 Infineon Technologies D650S.pdf Description: DIODE GEN PURP 1.4KV 620A
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D650S14TQRXPSA1 D650S14TQRXPSA1 Infineon Technologies D650S.pdf Description: DIODE GEN PURP 1.4KV 620A
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FP50R06KE3GBOSA1 Infineon Technologies INFNS28482-1.pdf?t.download=true&u=5oefqw Description: IGBT, 60A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3-3-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
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TLE63892GVXUMA1 TLE63892GVXUMA1 Infineon Technologies TLE_6389_Rev2007.pdf Description: IC REG CTRLR BUCK 14DSO
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TLE63892GVXUMA1 TLE63892GVXUMA1 Infineon Technologies TLE_6389_Rev2007.pdf Description: IC REG CTRLR BUCK 14DSO
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D3041N68TS04XPSA1 Infineon Technologies Description: DIODE GP 6.8KV 4090A D12026K-1
Packaging: Bulk
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4090A
Supplier Device Package: BG-D12026K-1
Operating Temperature - Junction: 160°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
Produkt ist nicht verfügbar
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BSZ058N03MSG Infineon Technologies INFNS16237-1.pdf?t.download=true&u=5oefqw Description: BSZ058N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
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CY25701FLXCT CY25701FLXCT Infineon Technologies Infineon-CY25701_Programmable_High_Frequency_Crystal_Oscillator_with_Spread_Spectrum_(SSXO)_and_No_Spread_Spectrum_(XO)_Option-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0b3d63550 Description: IC OSC XTAL PROG 4-CLCC
Packaging: Cut Tape (CT)
Package / Case: 4-CLCC
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Programmable Type: Blank (User Must Program)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 50mA
Supplier Device Package: 4-CLCC (5x3.2)
Height - Seated (Max): 0.051" (1.30mm)
Part Status: Obsolete
Available Frequency Range: 10 MHz ~ 166 MHz
Base Resonator: Crystal
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CY2547QI CY2547QI Infineon Technologies Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2547QI CY2547QI Infineon Technologies Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY25561SXC CY25561SXC Infineon Technologies Infineon-CY25561_Spread_Spectrum_Clock_Generator-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5d89c3bfa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK/FREQ SYNTH 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CHL8104-02CRT CHL8104-02CRT Infineon Technologies CHL8102_03_04_13_PB_V1.09_8-28-13.pdf Description: IC REG BUCK 40VQFN
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IPN60R1K0PFD7SATMA1 IPN60R1K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed62e922939f2 Description: CONSUMER PG-SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
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IPN60R1K0PFD7SATMA1 IPN60R1K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed62e922939f2 Description: CONSUMER PG-SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
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PEB2080NVB1 PEB2080NVB1 Infineon Technologies SIEMS02115-1.pdf?t.download=true&u=5oefqw Description: S-BUS INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: S / T Bus Interface Transceiver
Interface: S-Bus
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 13mA
Supplier Device Package: PG-LCC-28-R
Part Status: Active
Number of Circuits: 1
Power (Watts): 1 W
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PEB2080PVB1 PEB2080PVB1 Infineon Technologies SIEMS02115-1.pdf?t.download=true&u=5oefqw Description: S-BUS INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 22-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Function: S / T Bus Interface Transceiver
Interface: S-Bus
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 13mA
Supplier Device Package: P-DIP-22
Part Status: Active
Number of Circuits: 1
Power (Watts): 1 W
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IKW50N65H5AXKSA1 IKW50N65H5AXKSA1 Infineon Technologies IKW50N65H5A.pdf Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/173ns
Switching Energy: 450µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 116 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
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FB20R06YE3B1BOMA1 Infineon Technologies INFNS12008-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 77 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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F3L300R12ME4_B22 Infineon Technologies INFNS28261-1.pdf?t.download=true&u=5oefqw Description: F3L300R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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KITA2GAUDIOSHIELDTOBO1 KITA2GAUDIOSHIELDTOBO1 Infineon Technologies Infineon-AURIX_Audio_Application_Kit-UserManual-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181cd3b71e630b3 Description: GENERIC AUDIO EVAL-KIT WITH CLAS
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM67D120A, MA12070P
Part Status: Active
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BCP49E6327 BCP49E6327 Infineon Technologies INFNS10858-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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BCP49E6419 BCP49E6419 Infineon Technologies INFNS10858-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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TC327LP16F160SAAKXUMA1 TC327LP16F160SAAKXUMA1 Infineon Technologies Infineon-TC33x_TC32x_AA-step_DataSheet-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0179138f08872ef3 Description: IC MCU 32BIT 1MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 152K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 16 SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Part Status: Active
DigiKey Programmable: Not Verified
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BCR 151T E6327 BCR 151T E6327 Infineon Technologies BCR151.pdf Description: TRANS PREBIAS PNP 50V 0.05A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 120 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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BCR 153L3 E6327 BCR 153L3 E6327 Infineon Technologies BCR153%20Series.pdf Description: TRANS PREBIAS PNP 250MW TSLP-3
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BCR 151F E6327 BCR 151F E6327 Infineon Technologies BCR151.pdf Description: TRANS PREBIAS PNP 250MW TSFP-3
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BCR 151L3 E6327 BCR 151L3 E6327 Infineon Technologies BCR151.pdf Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 120 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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BCR 191L3 E6327 BCR 191L3 E6327 Infineon Technologies BCR191%20%282006%29.pdf Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Produkt ist nicht verfügbar
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BSC014N03LSGATMA1 BSC014N03LS_rev1.3.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a30431be39b97011c23384f5d77fb
BSC014N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 34A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
Produkt ist nicht verfügbar
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S29AL008J70BFM023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J70BFM023
Hersteller: Infineon Technologies
Description: IC FLASH 8MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29AL008J70TFA023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J70TFA023
Hersteller: Infineon Technologies
Description: IC FLASH 8MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL256S10DHSS50 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL256S10DHSS50
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPA90R1K0C3XKSA1 IPA90R1K0C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8cbbbc490f94
IPA90R1K0C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 5.7A TO220-FP
Produkt ist nicht verfügbar
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IDD10SG60CXTMA2 Infineon-IDD10SG60C-DS-v02_04-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304327b897500127dd77c6a21abe
IDD10SG60CXTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 10A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
Produkt ist nicht verfügbar
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IDD10SG60CXTMA2 Infineon-IDD10SG60C-DS-v02_04-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304327b897500127dd77c6a21abe
IDD10SG60CXTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 10A PGTO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.54 EUR
10+6.38 EUR
100+4.58 EUR
Mindestbestellmenge: 2
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IRLL1503 fundamentals-of-power-semiconductors
IRLL1503
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 75A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS7537PBF irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb
IRFS7537PBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 173A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Produkt ist nicht verfügbar
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TT700N22KOFHPSA1 Infineon-TT700N22KOF-DataSheet-v03_02-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6
TT700N22KOFHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
auf Bestellung 3 Stücke:
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Anzahl Preis
1+591.82 EUR
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TT700N22KOFHPSA1 Infineon-TT700N22KOF-DataSheet-v03_02-EN.pdf?fileId=5546d46269e1c0190169e2db628f01c6
TT700N22KOFHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
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T4771N22TOFXPSA1 Infineon-T4771N-DS-v09_00-en_de.pdf?fileId=db3a304412b407950112b42ffe5c4e94
T4771N22TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2900V 6820A DO200AE
Produkt ist nicht verfügbar
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TDA5212XUMA1 TDA5212.pdf
TDA5212XUMA1
Hersteller: Infineon Technologies
Description: RF RX ASK/FSK 902-928MHZ 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 902MHz ~ 928MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 5.4mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFP4368PBF description irfp4368pbf.pdf?fileId=5546d462533600a40153562c61512015
IRFP4368PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 195A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19230 pF @ 50 V
Produkt ist nicht verfügbar
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TLE4254EJSXUMA2 Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6
TLE4254EJSXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
auf Bestellung 5680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
12+1.6 EUR
25+1.45 EUR
100+1.28 EUR
250+1.21 EUR
500+1.16 EUR
1000+1.12 EUR
Mindestbestellmenge: 9
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TLE4254EJAXUMA2 Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6
TLE4254EJAXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
auf Bestellung 4450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
12+1.6 EUR
25+1.45 EUR
100+1.28 EUR
250+1.21 EUR
500+1.16 EUR
1000+1.12 EUR
Mindestbestellmenge: 9
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S29GL01GT11FHV010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT11FHV010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.28 EUR
10+24.34 EUR
25+24 EUR
40+23.7 EUR
180+20.77 EUR
360+19.88 EUR
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ESD208-B1-02ELSE6327 INFN-S-A0000321166-1.pdf?t.download=true&u=5oefqw
ESD208-B1-02ELSE6327
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
auf Bestellung 14984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7493+0.064 EUR
Mindestbestellmenge: 7493
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MB91F467SAPMC-GS-N2K5E2
MB91F467SAPMC-GS-N2K5E2
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Produkt ist nicht verfügbar
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MB91F467TAPMC-GS-N2K5E2
MB91F467TAPMC-GS-N2K5E2
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 109
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F467CBPMCR-GS-UJE2 download
CY91F467CBPMCR-GS-UJE2
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Produkt ist nicht verfügbar
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S29GL128S90TFA020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S90TFA020
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL128S90TFA010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S90TFA010
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4254EJS Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6
TLE4254EJS
Hersteller: Infineon Technologies
Description: TLE4254 - LINEAR VOLTAGE REGULAT
Produkt ist nicht verfügbar
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TLE4254EJA Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6
TLE4254EJA
Hersteller: Infineon Technologies
Description: TLE4254 - LINEAR VOLTAGE REGULAT
Produkt ist nicht verfügbar
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BGT60ATR24CE6327XTMA1 Infineon-BGT60ATR24C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ff9f022017ffec84fa40aa2
BGT60ATR24CE6327XTMA1
Hersteller: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Output Type: Digital
Operating Temperature: -40°C ~ 145°C (TJ)
Sensor Type: Radar Sensor
Produkt ist nicht verfügbar
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BGT60ATR24CE6327XTMA1 Infineon-BGT60ATR24C-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ff9f022017ffec84fa40aa2
BGT60ATR24CE6327XTMA1
Hersteller: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Output Type: Digital
Operating Temperature: -40°C ~ 145°C (TJ)
Sensor Type: Radar Sensor
auf Bestellung 3445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.67 EUR
10+38.11 EUR
25+36.19 EUR
100+33.54 EUR
250+31.96 EUR
500+30.85 EUR
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IPD25N06S240ATMA2 Infineon-IPD25N06S2_40-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433b9ae5d5d&ack=t
IPD25N06S240ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 29A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD25N06S240ATMA2 Infineon-IPD25N06S2_40-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433b9ae5d5d&ack=t
IPD25N06S240ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 29A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
15+1.2 EUR
100+0.83 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 12
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1EDN7116GXTMA1 Infineon-DS_1EDN71x6G-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7c9758f2017ca3b96d9b77a6
1EDN7116GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 10VFDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.2V ~ 11V
Input Type: Non-Inverting
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
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Anzahl Preis
4000+0.53 EUR
Mindestbestellmenge: 4000
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1EDN7116GXTMA1 Infineon-DS_1EDN71x6G-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7c9758f2017ca3b96d9b77a6
1EDN7116GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.2V ~ 11V
Input Type: Non-Inverting
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 7385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
22+0.83 EUR
25+0.74 EUR
100+0.65 EUR
250+0.61 EUR
500+0.58 EUR
1000+0.56 EUR
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D650S12TXPSA1 D650S.pdf
D650S12TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 620A
Produkt ist nicht verfügbar
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D650S14TXPSA1 D650S.pdf
D650S14TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.4KV 620A
Produkt ist nicht verfügbar
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D650S14TQRXPSA1 D650S.pdf
D650S14TQRXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.4KV 620A
Produkt ist nicht verfügbar
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FP50R06KE3GBOSA1 INFNS28482-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT, 60A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3-3-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
auf Bestellung 140 Stücke:
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Anzahl Preis
3+173.07 EUR
Mindestbestellmenge: 3
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TLE63892GVXUMA1 TLE_6389_Rev2007.pdf
TLE63892GVXUMA1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Produkt ist nicht verfügbar
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TLE63892GVXUMA1 TLE_6389_Rev2007.pdf
TLE63892GVXUMA1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Produkt ist nicht verfügbar
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D3041N68TS04XPSA1
Hersteller: Infineon Technologies
Description: DIODE GP 6.8KV 4090A D12026K-1
Packaging: Bulk
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4090A
Supplier Device Package: BG-D12026K-1
Operating Temperature - Junction: 160°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
Produkt ist nicht verfügbar
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BSZ058N03MSG INFNS16237-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BSZ058N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
auf Bestellung 11233 Stücke:
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Anzahl Preis
886+0.6 EUR
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CY25701FLXCT Infineon-CY25701_Programmable_High_Frequency_Crystal_Oscillator_with_Spread_Spectrum_(SSXO)_and_No_Spread_Spectrum_(XO)_Option-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0b3d63550
CY25701FLXCT
Hersteller: Infineon Technologies
Description: IC OSC XTAL PROG 4-CLCC
Packaging: Cut Tape (CT)
Package / Case: 4-CLCC
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Programmable Type: Blank (User Must Program)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 50mA
Supplier Device Package: 4-CLCC (5x3.2)
Height - Seated (Max): 0.051" (1.30mm)
Part Status: Obsolete
Available Frequency Range: 10 MHz ~ 166 MHz
Base Resonator: Crystal
auf Bestellung 122 Stücke:
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Anzahl Preis
6+3.26 EUR
10+2.41 EUR
25+2.2 EUR
100+1.96 EUR
Mindestbestellmenge: 6
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CY2547QI Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY2547QI
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.07 EUR
Mindestbestellmenge: 4
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CY2547QI Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY2547QI
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY25561SXC Infineon-CY25561_Spread_Spectrum_Clock_Generator-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5d89c3bfa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY25561SXC
Hersteller: Infineon Technologies
Description: IC CLK/FREQ SYNTH 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 15190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
60+8.38 EUR
Mindestbestellmenge: 60
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CHL8104-02CRT CHL8102_03_04_13_PB_V1.09_8-28-13.pdf
CHL8104-02CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Produkt ist nicht verfügbar
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IPN60R1K0PFD7SATMA1 Infineon-IPN60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed62e922939f2
IPN60R1K0PFD7SATMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
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IPN60R1K0PFD7SATMA1 Infineon-IPN60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed62e922939f2
IPN60R1K0PFD7SATMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
auf Bestellung 2442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.11 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
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PEB2080NVB1 SIEMS02115-1.pdf?t.download=true&u=5oefqw
PEB2080NVB1
Hersteller: Infineon Technologies
Description: S-BUS INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: S / T Bus Interface Transceiver
Interface: S-Bus
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 13mA
Supplier Device Package: PG-LCC-28-R
Part Status: Active
Number of Circuits: 1
Power (Watts): 1 W
auf Bestellung 5973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
62+7.89 EUR
Mindestbestellmenge: 62
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PEB2080PVB1 SIEMS02115-1.pdf?t.download=true&u=5oefqw
PEB2080PVB1
Hersteller: Infineon Technologies
Description: S-BUS INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 22-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Function: S / T Bus Interface Transceiver
Interface: S-Bus
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 13mA
Supplier Device Package: P-DIP-22
Part Status: Active
Number of Circuits: 1
Power (Watts): 1 W
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+11.12 EUR
Mindestbestellmenge: 44
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IKW50N65H5AXKSA1 IKW50N65H5A.pdf
IKW50N65H5AXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/173ns
Switching Energy: 450µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 116 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FB20R06YE3B1BOMA1 INFNS12008-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 77 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
auf Bestellung 20 Stücke:
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Anzahl Preis
10+50.82 EUR
Mindestbestellmenge: 10
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F3L300R12ME4_B22 INFNS28261-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: F3L300R12 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+565.42 EUR
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KITA2GAUDIOSHIELDTOBO1 Infineon-AURIX_Audio_Application_Kit-UserManual-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181cd3b71e630b3
KITA2GAUDIOSHIELDTOBO1
Hersteller: Infineon Technologies
Description: GENERIC AUDIO EVAL-KIT WITH CLAS
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM67D120A, MA12070P
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+258.19 EUR
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BCP49E6327 INFNS10858-1.pdf?t.download=true&u=5oefqw
BCP49E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BCP49E6419 INFNS10858-1.pdf?t.download=true&u=5oefqw
BCP49E6419
Hersteller: Infineon Technologies
Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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TC327LP16F160SAAKXUMA1 Infineon-TC33x_TC32x_AA-step_DataSheet-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0179138f08872ef3
TC327LP16F160SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 152K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 16 SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCR 151T E6327 BCR151.pdf
BCR 151T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.05A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 120 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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BCR 153L3 E6327 BCR153%20Series.pdf
BCR 153L3 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 250MW TSLP-3
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BCR 151F E6327 BCR151.pdf
BCR 151F E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 250MW TSFP-3
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BCR 151L3 E6327 BCR151.pdf
BCR 151L3 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 120 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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BCR 191L3 E6327 BCR191%20%282006%29.pdf
BCR 191L3 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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