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NSVMUN5135DW1T1GonsemiDescription: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5135DW1T1GONSEMIDescription: ONSEMI - NSVMUN5135DW1T1G - Bipolarer Transistor, pre-biased/digital, Zweifach pnp, 50 V, 100 mA, 2.2 kohm, 47 kohm
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 80hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 2.2kohm
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: 47kohm
Verlustleistung: 385mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-363
Dauerkollektorstrom: 100mA
Anzahl der Pins: 6 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: Zweifach pnp
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
auf Bestellung 3751 Stücke:
Lieferzeit 14-21 Tag (e)
432+0.58 EUR
705+0.33 EUR
953+0.23 EUR
1255+0.17 EUR
1346+0.15 EUR
Mindestbestellmenge: 432 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5135DW1T1GonsemiDigital Transistors SS SC88 BR XSTR PNP
auf Bestellung 787 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
3000+0.099 EUR
6000+0.086 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5135DW1T1GonsemiDescription: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.48 EUR
72+0.3 EUR
115+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5135DW1T1GONSEMICategory: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5136T1GonsemiDigital Transistors Bias Resistor Transistor
auf Bestellung 16950 Stücke:
Lieferzeit 10-14 Tag (e)
11+0.31 EUR
17+0.2 EUR
100+0.13 EUR
500+0.082 EUR
1000+0.071 EUR
3000+0.061 EUR
6000+0.052 EUR
Mindestbestellmenge: 11 Stücke
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NSVMUN5136T1GonsemiDescription: BIAS RESISTOR TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5136T1GonsemiDescription: BIAS RESISTOR TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
110+0.19 EUR
178+0.12 EUR
500+0.086 EUR
1000+0.075 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5137DW1T1GON SemiconductorDescription: TRANS PREBIAS 2PNP 50V SC88
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5137DW1T1GonsemiDigital Transistors SS SC88 BR XSTR PNP 50V
auf Bestellung 6060 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.6 EUR
10+0.5 EUR
100+0.39 EUR
500+0.25 EUR
1000+0.21 EUR
3000+0.13 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5211DW1T2GON Semiconductor
auf Bestellung 980 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5211DW1T2GonsemiDescription: TRANS PREBIAS 2NPN 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5211DW1T2GonsemiDigital Transistors SS SC88 BR XSTR NPN 50V
auf Bestellung 4023 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
3000+0.099 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5211DW1T2GONSEMICategory: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 35...60
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5211DW1T2GonsemiDescription: TRANS PREBIAS 2NPN 50V SOT-363
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 385mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.31 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5211DW1T3GONSEMIDescription: ONSEMI - NSVMUN5211DW1T3G - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 10 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 35hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
Dauer-Kollektorstrom: 100mA
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 385mW
Bauform - Transistor: SOT-363
Produktpalette: -
productTraceability: No
Wandlerpolarität: Zweifach npn
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 8330 Stücke:
Lieferzeit 14-21 Tag (e)
306+0.82 EUR
375+0.62 EUR
725+0.3 EUR
863+0.25 EUR
1064+0.2 EUR
2500+0.19 EUR
5000+0.18 EUR
Mindestbestellmenge: 306 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5211DW1T3GonsemiDescription: TRANS PREBIAS 2NPN 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5211DW1T3GONSEMIDescription: ONSEMI - NSVMUN5211DW1T3G - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 10 kohm, 10 kohm
tariffCode: 85412100
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 35hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Dauer-Kollektorstrom: 100mA
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
euEccn: NLR
Verlustleistung: 385mW
Bauform - Transistor: SOT-363
productTraceability: No
Wandlerpolarität: Zweifach npn
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 8330 Stücke:
Lieferzeit 14-21 Tag (e)
306+0.82 EUR
375+0.62 EUR
725+0.3 EUR
863+0.25 EUR
1064+0.2 EUR
2500+0.19 EUR
5000+0.18 EUR
Mindestbestellmenge: 306 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5211DW1T3GonsemiDigital Transistors SS SC88 BR XSTR NPN 50V
auf Bestellung 9642 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.61 EUR
10+0.38 EUR
100+0.24 EUR
500+0.17 EUR
1000+0.14 EUR
2500+0.13 EUR
5000+0.11 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5211DW1T3GonsemiDescription: TRANS PREBIAS 2NPN 50V SOT-363
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5212DW1T1GONSEMICategory: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5212DW1T1GonsemiDescription: TRANS PREBIAS 2NPN 50V SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 8395 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.31 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 40 Stücke
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NSVMUN5212DW1T1GonsemiDigital Transistors SS BR XSTR NPN 50V
auf Bestellung 781 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.61 EUR
10+0.42 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.14 EUR
3000+0.13 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5212DW1T1GonsemiDescription: TRANS PREBIAS 2NPN 50V SOT-363
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-88/SC70-6/SOT-363
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+0.089 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5213DW1T3GonsemiBipolar Transistors - Pre-Biased 100mA 50V BRT NPN
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5213DW1T3GonsemiDescription: TRANS NPN 50V DUAL BIPO SC88-6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 18342 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.55 EUR
64+0.33 EUR
102+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5213DW1T3GonsemiDescription: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.093 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5214DW1T3GonsemiDescription: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9725 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.55 EUR
64+0.33 EUR
102+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
5000+0.1 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5214DW1T3GonsemiDigital Transistors SS SC88 BR XSTR NPN 50V
auf Bestellung 8628 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.11 EUR
5000+0.099 EUR
10000+0.075 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5214DW1T3GonsemiDescription: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5215DW1T1GonsemiDescription: TRANS PREBIAS 2NPN 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NSVMUN5215DW1T1GonsemiDigital Transistors SS SC88 BR XSTR NPN 50V
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
3000+0.099 EUR
Mindestbestellmenge: 7 Stücke
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NSVMUN5215DW1T1GonsemiDescription: TRANS PREBIAS 2NPN 50V SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 2520 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
32+0.65 EUR
100+0.45 EUR
500+0.33 EUR
1000+0.25 EUR
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NSVMUN5215DW1T1GONSEMICategory: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Manufacturer standard package: 3000pcs.
Current gain: 160...350
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5216T1GonsemiDescription: TRANS PREBIAS NPN 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.061 EUR
Mindestbestellmenge: 11539 Stücke
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NSVMUN5216T1GonsemiDescription: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
Mindestbestellmenge: 56 Stücke
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NSVMUN5216T1GonsemiDescription: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
15000+0.06 EUR
21000+0.057 EUR
30000+0.054 EUR
75000+0.048 EUR
Mindestbestellmenge: 3000 Stücke
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NSVMUN5216T1GONSEMIDescription: ONSEMI - NSVMUN5216T1G - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 102000 Stücke:
Lieferzeit 14-21 Tag (e)
12000+0.069 EUR
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5216T1GonsemiDigital Transistors SS SC70 BR XSTR NPN 50V
auf Bestellung 12810 Stücke:
Lieferzeit 10-14 Tag (e)
9+0.42 EUR
10+0.35 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.15 EUR
3000+0.088 EUR
6000+0.075 EUR
Mindestbestellmenge: 9 Stücke
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NSVMUN5233DW1T3GonsemiDescription: TRANS PREBIAS 2NPN 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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NSVMUN5233DW1T3GON SemiconductorNPN Transistors with Monolithic Bias Resistor Network Automotive AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
8334+0.079 EUR
10000+0.069 EUR
Mindestbestellmenge: 8334 Stücke
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NSVMUN5233DW1T3GonsemiDigital Transistors SS SC88 BR XSTR NPN
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7 Stücke
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NSVMUN5233DW1T3GonsemiDescription: TRANS PREBIAS 2NPN 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9390 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
68+0.31 EUR
108+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.096 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5233DW1T3GON SemiconductorNPN Transistors with Monolithic Bias Resistor Network Automotive AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5234T1GonsemiDigital Transistors NPN Bipolar Digital Transistor (BRT)
auf Bestellung 14997 Stücke:
Lieferzeit 10-14 Tag (e)
10+0.35 EUR
16+0.21 EUR
100+0.13 EUR
500+0.096 EUR
1000+0.083 EUR
3000+0.069 EUR
6000+0.067 EUR
Mindestbestellmenge: 10 Stücke
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NSVMUN5234T1GonsemiDescription: SS SC70 BR XSTR NPN 50V
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.062 EUR
6000+0.055 EUR
9000+0.051 EUR
15000+0.048 EUR
21000+0.045 EUR
30000+0.043 EUR
75000+0.039 EUR
Mindestbestellmenge: 3000 Stücke
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NSVMUN5234T1GONSEMIDescription: ONSEMI - NSVMUN5234T1G - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 22 kohm, 47 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 80hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 22kohm
isCanonical: Y
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 47kohm
Verlustleistung: 202mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SC-70
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
auf Bestellung 4652 Stücke:
Lieferzeit 14-21 Tag (e)
614+0.4 EUR
991+0.24 EUR
1593+0.13 EUR
2381+0.09 EUR
2689+0.08 EUR
Mindestbestellmenge: 614 Stücke
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NSVMUN5234T1GonsemiDescription: SS SC70 BR XSTR NPN 50V
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
90+0.24 EUR
144+0.14 EUR
500+0.11 EUR
1000+0.093 EUR
Mindestbestellmenge: 56 Stücke
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NSVMUN5235DW1T1GonsemiDescription: TRANS PREBIAS 2NPN 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5235DW1T1GonsemiDigital Transistors SS SC88 BR XSTR NPN 50V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4 Stücke
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NSVMUN5236T1GON SemiconductorBipolar Transistors - Pre-Biased SS SC70 BR XSTR NPN 50V
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
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NSVMUN5236T1GonsemiDescription: TRANS PREBIAS NPN 50V SC70-3
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
8795+0.062 EUR
Mindestbestellmenge: 8795 Stücke
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NSVMUN5236T1GON SemiconductorDescription: TRANS PREBIAS NPN 0.202W SC70
Produkt ist nicht verfügbar
 Mindestbestellmenge: 9000 Stücke
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NSVMUN5237T1GON SemiconductorDescription: TRANS NPN 50V BIPOLAR SC70-3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 9000 Stücke
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NSVMUN5237T1GonsemiDescription: NSVMUN5237 - NPN BIPOLAR DIGITAL
Produkt ist nicht verfügbar
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NSVMUN5237T1GonsemiDigital Transistors SS SC70 BR XSTR NPN 50V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
10+0.36 EUR
16+0.21 EUR
100+0.14 EUR
500+0.1 EUR
1000+0.077 EUR
3000+0.067 EUR
6000+0.057 EUR
Mindestbestellmenge: 10 Stücke
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NSVMUN5312DW1T2GONSEMICategory: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 60...100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5312DW1T2GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NSVMUN5312DW1T2GonsemiDigital Transistors SS SC88 BR XSTR DUAL 50V
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
3000+0.099 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5312DW1T2GONN
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5312DW1T2GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.32 EUR
107+0.2 EUR
Mindestbestellmenge: 40 Stücke
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NSVMUN5312DW1T3GonsemiDigital Transistors SS SC88 BR XSTR DUAL 50V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6 Stücke
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NSVMUN5312DW1T3GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5312DW1T3GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN531335DW1T1GON Semiconductor
auf Bestellung 2460 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN531335DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN531335DW1T1GonsemiDigital Transistors SS SC88 BR XSTR NPN/PNP 50V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.6 EUR
10+0.4 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.14 EUR
3000+0.13 EUR
Mindestbestellmenge: 6 Stücke
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NSVMUN531335DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVMUN531335DW1T1GONSEMICategory: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2/47kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Produkt ist nicht verfügbar
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NSVMUN531335DW1T3GonsemiDigital Transistors SS SC88 BR XSTR NPN/PNP 50V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.6 EUR
10+0.4 EUR
100+0.26 EUR
500+0.17 EUR
1000+0.14 EUR
2500+0.13 EUR
5000+0.11 EUR
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NSVMUN531335DW1T3GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN531335DW1T3GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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NSVMUN5314DW1T3GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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NSVMUN5314DW1T3GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5314DW1T3GonsemiDigital Transistors SS SC88 BR XSTR DUAL 50V
auf Bestellung 22044 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.6 EUR
10+0.37 EUR
100+0.24 EUR
500+0.17 EUR
1000+0.14 EUR
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NSVMUN5314DW1T3GON Semiconductor
auf Bestellung 8670 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5316DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+0.09 EUR
Mindestbestellmenge: 3000 Stücke
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NSVMUN5316DW1T1GonsemiDigital Transistors SS SC88 BR XSTR DUAL 50V
auf Bestellung 11480 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.5 EUR
11+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
3000+0.096 EUR
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NSVMUN5316DW1T1GONSEMICategory: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5316DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13390 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.32 EUR
107+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
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NSVMUN5331DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.48 EUR
73+0.29 EUR
117+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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NSVMUN5331DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NSVMUN5331DW1T1GonsemiDigital Transistors SS SC88 BR XSTR DUAL
auf Bestellung 13970 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.49 EUR
12+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
3000+0.096 EUR
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NSVMUN5332DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.48 EUR
72+0.3 EUR
115+0.18 EUR
500+0.13 EUR
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NSVMUN5332DW1T1GONN
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
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NSVMUN5332DW1T1GonsemiDigital Transistors Complementary Bipolar Digital Transistor (BRT)
Produkt ist nicht verfügbar
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NSVMUN5332DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NSVMUN5332DW1T3GonsemiDigital Transistors SS SC88 BR XSTR NPN 50V
Produkt ist nicht verfügbar
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NSVMUN5332DW1T3GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5332DW1T3GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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NSVMUN5333DW1T1GON SemiconductorТранзистор цифровий smd, Тип стр. = 1 NPN, 1 PNP, Ic = 100 мА, hFE = 80 @ 5 мA, 10 В, Icutoff-max = 500 нА, R1, кОм = 4,7, R2, кОм = 47, Uceo(sat), В @ Ic, Ib = 0,25 @ 1 мА, 10 мА, Uсe, B = 50, Р, Вт = 0,25,... Транзистори Корпус: TSSOP-6 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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NSVMUN5333DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5333DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2147 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.48 EUR
73+0.29 EUR
117+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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NSVMUN5333DW1T1GonsemiDigital Transistors SS BR XSTR DUAL 50V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.6 EUR
10+0.37 EUR
100+0.24 EUR
500+0.17 EUR
1000+0.14 EUR
3000+0.099 EUR
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NSVMUN5333DW1T3GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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NSVMUN5333DW1T3GonsemiDigital Transistors SS SC88 BR XSTR DUAL
Produkt ist nicht verfügbar
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NSVMUN5333DW1T3GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5334DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5334DW1T1GonsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NSVMUN5334DW1T1GonsemiDigital Transistors SS BR XSTR DUAL 50V
auf Bestellung 2991 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.5 EUR
11+0.33 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.12 EUR
3000+0.1 EUR
6000+0.082 EUR
Mindestbestellmenge: 7 Stücke
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