Produkte > IPB
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| IPB200N25N3GATMA1 | INFINEON | Description: INFINEON - IPB200N25N3GATMA1 - Leistungs-MOSFET, n-Kanal, 250 V, 64 A, 0.02 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 31787 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB200N25N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB200N25N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 6795 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB200N25N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 250V 64A D2PAK-2 OptiMOS 3 | auf Bestellung 3704 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB200N25N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB200N25N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB200N25N3GATMA1 | INFINEON | Description: INFINEON - IPB200N25N3GATMA1 - Leistungs-MOSFET, n-Kanal, 250 V, 64 A, 0.02 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 300W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 28872 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB200N25N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2341 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB200N25N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 250V 64A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V | auf Bestellung 3185 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB200N25N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB200N25N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 250V 64A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB22N03S4L-15 | Infineon Technologies | MOSFET N-Ch 30V 22A D2PAK-2 OptiMOS-T2 | auf Bestellung 438 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB22N03S4L-15 | Infineon Technologies | Description: IPB22N03 - 20V-40V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V | auf Bestellung 1373 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB22N03S4L-15ATMA1 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB22N03S4L15ATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 22A TO263-3 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Qualification: AEC-Q101 | auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB22N03S4L15ATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 22A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB230N06L3G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 2.2V @ 11µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB230N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 30A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB240N03S4LR8ATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 240A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 230µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB240N03S4LR8ATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 240A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 230µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB240N03S4LR8ATMA1 | Infineon Technologies | MOSFETs MOSFET_(20V 40V) | auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB240N03S4LR8ATMA1928 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 2.2V @ 230µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB240N03S4LR9ATMA1 | Infineon Technologies | MOSFET MOSFET_(20V 40V) | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB240N03S4LR9ATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 240A TO263-7 Packaging: Bulk Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 180µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 21485 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB240N03S4LR9ATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 240A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 180µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB240N04S41R0ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 240A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17682 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 917 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB240N04S41R0ATMA1 | Infineon Technologies | MOSFETs MOSFET_(20V 40V) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB240N04S41R0ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 240A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17682 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB240N04S4R9ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 240A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB240N04S4R9ATMA1 | Infineon Technologies | MOSFETs MOSFET_(20V 40V) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB240N04S4R9ATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 240A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 595 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB25N06S3-25 | Infineon Technologies | Description: MOSFET N-CH 55V 25A TO263-3 Input Capacitance (Ciss) (Max) @ Vds: 1862 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 20µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 24.8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB25N06S3-25 | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB25N06S3L-22 | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB25N06S3L-22 | Infineon Technologies | Description: MOSFET N-CH 55V 25A TO263-3 Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2.2V @ 20µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 21.3mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB260N06N3G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 11µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB260N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 27A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 11µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB26CN10N | auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| IPB26CN10NG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB26CN10NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 35A D2PAK | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 577 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB26CNE8N G | Infineon Technologies | Description: MOSFET N-CH 85V 35A TO263-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB26CNE8NG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB3 | Eaton Electrical | IP B3 INTERPHASE BARRIER 4 J/K SERIES | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB30N03L | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| IPB320N20N3 G | Infineon | MOSFET N-CH 200V 34A, D2PAK Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB320N20N3 G | Infineon Technologies | MOSFETs N-Ch 200V 34A D2PAK-2 OptiMOS 3 | auf Bestellung 1514 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB320N20N3G | Infineon | auf Bestellung 980 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IPB320N20N3GATMA1 | Infineon | MOSFET N-CH 200V 34A, D2PAK Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 14496 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | MOSFETs N-Ch 200V 34A D2PAK-2 OptiMOS 3 | auf Bestellung 4390 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 10526 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 218000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | N-канальний ПТ, Udss, В = 200, Id = 34 А, Ciss, пФ @ Uds, В = 2350 pF @ 100 V, Qg, нКл = 29 @ 10 V, Rds = 32mOhm @ 34A, 10V, Опис N-канальний ПТ, Тексп, °C = -55°C ... 175°C,... Транзистори Корпус: D2PAK Очікується: 100 Од. вим: шт Anzahl je Verpackung: 1000 Stücke | verfügbar 10 Stücke: | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB320N20N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 200V 34A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V | auf Bestellung 6190 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB320N20N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3 Polarisation: unipolar Type of transistor: N-MOSFET Mounting: SMD Drain-source voltage: 200V Drain current: 34A On-state resistance: 32mΩ Gate-source voltage: ±20V Power dissipation: 136W Technology: OptiMOS™ 3 Case: PG-TO263-3 Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 412000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3995 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | INFINEON | Description: INFINEON - IPB320N20N3GATMA1 - Leistungs-MOSFET, n-Kanal, 200 V, 34 A, 0.032 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 34A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 136W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.032ohm | auf Bestellung 12147 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 200V 34A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB320N20N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 14496 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320P10LMATMA1 | INFINEON | Description: INFINEON - IPB320P10LMATMA1 - Leistungs-MOSFET, p-Kanal, 100 V, 63 A, 0.0254 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 63A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 300W Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0254ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0254ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320P10LMATMA1 | Infineon Technologies | Description: TRENCH >=100V PG-TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 5.55mA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB320P10LMATMA1 | INFINEON TECHNOLOGIES | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -63A; 300W; D2PAK,TO263 Polarisation: unipolar Type of transistor: P-MOSFET Mounting: SMD Drain-source voltage: -100V Drain current: -63A Gate charge: 219nC On-state resistance: 32mΩ Power dissipation: 300W Case: D2PAK; TO263 Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB320P10LMATMA1 | INFINEON | Description: INFINEON - IPB320P10LMATMA1 - Leistungs-MOSFET, p-Kanal, 100 V, 63 A, 0.0254 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 63A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0254ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB320P10LMATMA1 | Infineon Technologies | Description: TRENCH >=100V PG-TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 54A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 5.55mA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V | auf Bestellung 850 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB320P10LMATMA1 | Infineon Technologies | IPB320P10LMATMA1 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB320P10LMATMA1 | Infineon Technologies | MOSFETs TRENCH >=100V | auf Bestellung 870 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB330P10NMATMA1 | Infineon Technologies | Trans MOSFET P-CH 100V 6.9A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB330P10NMATMA1 | INFINEON | Description: INFINEON - IPB330P10NMATMA1 - Leistungs-MOSFET, p-Kanal, 100 V, 62 A, 0.0268 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 62A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 300W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0268ohm | auf Bestellung 825 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB330P10NMATMA1 | Infineon Technologies | Description: TRENCH >=100V PG-TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 5.55mA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB330P10NMATMA1 | Infineon Technologies | Trans MOSFET P-CH 100V 6.9A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB330P10NMATMA1 | Infineon Technologies | Trans MOSFET P-CH 100V 6.9A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1948 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB330P10NMATMA1 | Infineon Technologies | MOSFETs IFX FET >80 - 100V | auf Bestellung 1166 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB330P10NMATMA1 | Infineon Technologies | Trans MOSFET P-CH 100V 6.9A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB330P10NMATMA1 | INFINEON | Description: INFINEON - IPB330P10NMATMA1 - Leistungs-MOSFET, p-Kanal, 100 V, 62 A, 0.0268 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 62A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 300W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0268ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0268ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1188 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB330P10NMATMA1 | Infineon Technologies | Trans MOSFET P-CH 100V 6.9A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 5015 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB330P10NMATMA1 | INFINEON TECHNOLOGIES | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB330P10NMATMA1 | Infineon Technologies | Description: TRENCH >=100V PG-TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 5.55mA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V | auf Bestellung 1633 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB330P10NMATMA1 | Infineon Technologies | Trans MOSFET P-CH 100V 6.9A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB330P10NMATMA1 | Infineon Technologies | Trans MOSFET P-CH 100V 6.9A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 5015 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB339N20NM6ATMA1 | Infineon Technologies | Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 52µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V | auf Bestellung 439 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB339N20NM6ATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 983 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB339N20NM6ATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 983 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB339N20NM6ATMA1 | Infineon Technologies | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 52µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB339N20NM6ATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB339N20NM6ATMA1 | Infineon Technologies | Trans MOSFET N-CH 200V 6.8A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB339N20NM6ATMA1 | Infineon Technologies | MOSFETs TRENCH >=100V | auf Bestellung 1147 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB34 | Eaton Electrical | Circuit Breaker Accessories JD / KD Interphase Barriers/ 4P BRKs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB34CN10NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 27A TO263-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB35CN10NG | infineon | 07+ to-263/d2-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPB35N10S3L-26 | Infineon Technologies | MOSFETs N-Ch 100V 35A D2PAK-2 OptiMOS-T | auf Bestellung 855 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB35N10S3L26ATMA1 | Infineon | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IPB35N10S3L26ATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 35A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 39µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB35N10S3L26ATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 100V; 35A; 71W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 100V Drain current: 35A Power dissipation: 71W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Application: automotive industry | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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