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AOB256LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 3A/19A TO263
Power Dissipation (Max): 2.1W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Produkt ist nicht verfügbar
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AOB256LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13.5A; 83W; TO263
Power dissipation: 83W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 13.5A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 85mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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AOB25S65L
Produktcode: 173627
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Transistoren > MOSFET N-CH
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AOB25S65LAlpha & Omega SemiconductorTrans MOSFET N-CH 650V 25A 3-Pin(2+Tab) D2PAK T/R
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AOB25S65LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.34 EUR
10+6.89 EUR
50+5.4 EUR
100+4.93 EUR
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AOB25S65LAOSТранзистори
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AOB25S65LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 25A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.89 EUR
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AOB25S65LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; Idm: 104A; 357W; TO263
Pulsed drain current: 104A
Power dissipation: 357W
Gate charge: 26.4nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO263
On-state resistance: 0.19Ω
Mounting: SMD
Produkt ist nicht verfügbar
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AOB2606LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 13A/72A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB2606LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; 57.5W; TO263
Power dissipation: 57.5W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO263
On-state resistance: 6.2mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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AOB2606LAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 72A 3-Pin(2+Tab) D2PAK
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AOB2608LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 11A/72A TO263
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 30 V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
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AOB260LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 165W; TO263
Power dissipation: 165W
Gate charge: 150nC
Polarisation: unipolar
Drain current: 110A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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AOB260LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 20A/140A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V
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AOB260LAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R
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AOB2618LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 7A/23A TO263
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB262LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 20A/140A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 30 V
Produkt ist nicht verfügbar
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AOB264LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 19A/140A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
Produkt ist nicht verfügbar
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AOB266LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 18A/140A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 30 V
Produkt ist nicht verfügbar
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AOB266LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 134W; TO263
Power dissipation: 134W
Gate charge: 65nC
Polarisation: unipolar
Drain current: 110A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 3.2mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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AOB266LAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R
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AOB270ALAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 75V 21.5A/140A TO263
Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB270ALALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 110A; 250W; TO263
Power dissipation: 250W
Gate charge: 147nC
Polarisation: unipolar
Drain current: 110A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 2.4mΩ
Mounting: SMD
auf Bestellung 657 Stücke:
Lieferzeit 14-21 Tag (e)
27+3.17 EUR
Mindestbestellmenge: 27 Stücke
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AOB270ALAlpha & Omega SemiconductorTrans MOSFET N-CH 75V 140A 3-Pin(2+Tab) D2PAK T/R
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AOB270LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 75V 21.5A/140A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 37.5 V
Produkt ist nicht verfügbar
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AOB27S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 27A 3-Pin(2+Tab) D2PAK T/R
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AOB27S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 27A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.92 EUR
2400+3.63 EUR
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AOB27S60LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 40W; TO263
Power dissipation: 40W
Gate charge: 26nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO263
On-state resistance: 0.16Ω
Mounting: SMD
auf Bestellung 626 Stücke:
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21+4.19 EUR
23+3.76 EUR
26+3.32 EUR
100+3 EUR
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AOB27S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 27A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 9866 Stücke:
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3+10.39 EUR
10+6.91 EUR
50+5.43 EUR
100+4.94 EUR
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AOB280A60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 14A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB280LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 20.5A/140A TO263
Input Capacitance (Ciss) (Max) @ Vds: 11135 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB280LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 166.5W; TO263
Power dissipation: 166.5W
Gate charge: 160nC
Polarisation: unipolar
Drain current: 110A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
auf Bestellung 541 Stücke:
Lieferzeit 14-21 Tag (e)
27+3.17 EUR
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AOB280LAlpha & Omega SemiconductorTrans MOSFET N-CH 80V 140A 3-Pin(2+Tab) D2PAK
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AOB282LAlpha & Omega SemiconductorTrans MOSFET N-CH 80V 105A 3-Pin(2+Tab) D2PAK
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AOB282LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 18.5A/105A TO263
Input Capacitance (Ciss) (Max) @ Vds: 7765 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB282LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO263
Power dissipation: 136W
Gate charge: 58nC
Polarisation: unipolar
Drain current: 82A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 3.2mΩ
Mounting: SMD
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
41+2.11 EUR
45+1.9 EUR
51+1.69 EUR
100+1.51 EUR
800+1.43 EUR
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AOB284LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 16A/105A TO263
Power Dissipation (Max): 2.1W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5154 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
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AOB284LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 125W; TO263
Power dissipation: 125W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 82A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 7.2mΩ
Mounting: SMD
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AOB286LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 83W; TO263
Power dissipation: 83W
Gate charge: 63nC
Polarisation: unipolar
Drain current: 55A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 7.6mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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AOB286LAlpha & Omega SemiconductorTrans MOSFET N-CH 80V 70A 3-Pin(2+Tab) D2PAK
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AOB286LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 13A/70A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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AOB288LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 10.5A/46A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 93.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB288LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 36A; 46.5W; TO263
Power dissipation: 46.5W
Gate charge: 26.5nC
Polarisation: unipolar
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 8.9mΩ
Mounting: SMD
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AOB2904Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 120A TO263
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB2904ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 163W; TO263
Power dissipation: 163W
Gate charge: 93nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 4.4mΩ
Mounting: SMD
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.94 EUR
47+1.82 EUR
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AOB2906Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
Supplier Device Package: TO-263 (D2Pak)
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AOB290LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK T/R
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Lieferzeit 14-21 Tag (e)
800+4.46 EUR
2400+4.36 EUR
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AOB290LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 18A/140A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9550 pF @ 50 V
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AOB290LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK T/R
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AOB290L
Produktcode: 169925
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Transistoren > MOSFET N-CH
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AOB290LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 18A/140A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9550 pF @ 50 V
auf Bestellung 14935 Stücke:
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AOB290LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 250W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 126nC
Kind of channel: enhancement
auf Bestellung 253 Stücke:
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AOB2910LAlpha & Omega Semiconductor Inc.Description: MOSFET N CH 100V 6A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc)
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AOB2910LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 25W; TO263
Power dissipation: 25W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 23.5mΩ
Mounting: SMD
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AOB2918LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 13A/90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 50 V
Produkt ist nicht verfügbar
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AOB292LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 82A; 300W; TO263
Power dissipation: 300W
Gate charge: 90nC
Polarisation: unipolar
Drain current: 82A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263
On-state resistance: 4.1mΩ
Mounting: SMD
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AOB292LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 105A 3-Pin(2+Tab) D2PAK T/R
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AOB292LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 105A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V
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AOB296LAlpha & Omega Semiconductor Inc.Description: MOSFET N CH 100V 9.5A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOB298LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 9A/58A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 50 V
Produkt ist nicht verfügbar
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AOB29S50LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 29A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V
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AOB29S50LAlpha & Omega SemiconductorTrans MOSFET N-CH 500V 29A 3-Pin(2+Tab) D2PAK T/R
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AOB29S50LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 29A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.54 EUR
10+7.72 EUR
50+6.08 EUR
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AOB29S50LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 29A; Idm: 120A; 357W; TO263
Pulsed drain current: 120A
Power dissipation: 357W
Gate charge: 26.6nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO263
On-state resistance: 0.15Ω
Mounting: SMD
Produkt ist nicht verfügbar
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AOB360A70LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
auf Bestellung 604 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.9 EUR
10+3.83 EUR
100+2.65 EUR
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AOB360A70LALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 48A; 156W; TO263
Polarisation: unipolar
Pulsed drain current: 48A
Power dissipation: 156W
Gate charge: 22.5nC
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO263
On-state resistance: 0.36Ω
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB360A70LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Produkt ist nicht verfügbar
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AOB380A60CLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
auf Bestellung 1307 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.9 EUR
10+3.83 EUR
50+2.94 EUR
100+2.65 EUR
Mindestbestellmenge: 4 Stücke
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AOB380A60CLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.03 EUR
Mindestbestellmenge: 800 Stücke
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AOB380A60CLALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 131W; TO263
Pulsed drain current: 44A
Power dissipation: 131W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO263
On-state resistance: 0.38Ω
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB403AOTO-252
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOB403LAO07+ SOT-263
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOB405AOTO-252
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOB405LAO07+ SOT-263
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOB409LAlpha & Omega SemiconductorTrans MOSFET P-CH 60V 31.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB409LAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 60V 5A/31.5A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 31.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB409LAlpha & Omega SemiconductorTrans MOSFET P-CH 60V 31.5A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.01 EUR
1600+0.8 EUR
Mindestbestellmenge: 800 Stücke
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AOB409LAlpha & Omega SemiconductorTrans MOSFET P-CH 60V 31.5A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB409LAlpha & Omega SemiconductorTrans MOSFET P-CH 60V 31.5A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.01 EUR
1600+0.81 EUR
Mindestbestellmenge: 800 Stücke
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AOB410LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB410LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB411LAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 60V 8A TO263
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB411LAOSТранзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOB411L_001Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 60V 8A TO263
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOB412AOS07+ TO-263
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOB412LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 8.2A TO263
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB414ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 75W; TO263
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Gate-source voltage: ±25V
Gate charge: 28nC
On-state resistance: 25mΩ
Power dissipation: 75W
Case: TO263
Kind of channel: enhancement
auf Bestellung 776 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.48 EUR
69+1.24 EUR
77+1.11 EUR
100+0.99 EUR
Mindestbestellmenge: 58 Stücke
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AOB414Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 6.6A/51A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.75 EUR
10+2.45 EUR
100+1.92 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOB414Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 6.6A/51A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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AOB414LAOSOT-263
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOB414_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 51A D2PAK
Produkt ist nicht verfügbar
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AOB416Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 45A D2PAK
auf Bestellung 2364 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOB416AOTO-263
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOB416Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 45A D2PAK
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 800 Stücke
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AOB416Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 45A D2PAK
auf Bestellung 2364 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOB416LAOSOT-263
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOB418Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 105A D2PAK
Produkt ist nicht verfügbar
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AOB418Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 105A D2PAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOB418AOTO-263
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOB418Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 105A D2PAK
Produkt ist nicht verfügbar
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