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AOT10T60PLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT1100LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 8A/130A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4833 pF @ 25 V
Produkt ist nicht verfügbar
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AOT110A
Produktcode: 43609
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IC > Optokoppler (Optrone)
Typ: Transistor
Isolationsspannung Uisol, kV: 500 V
Ausgangsspannung Uausg, V: 30 V
Produkt ist nicht verfügbar
1+2.58 EUR
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AOT11C60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 600V 11A TO220
Produkt ist nicht verfügbar
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AOT11C60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT11C60PLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220
Produkt ist nicht verfügbar
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AOT11N60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
Produkt ist nicht verfügbar
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AOT11N70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 11A TO220
Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 271W (Tc)
Produkt ist nicht verfügbar
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AOT11S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT11S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.63 EUR
10+3.67 EUR
100+2.53 EUR
500+2.06 EUR
1000+1.9 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT11S65LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 11A TO220
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar
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AOT11S65LAlpha & Omega SemiconductorTrans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT125A60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT128Б
Produktcode: 191537
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IC > Optokoppler (Optrone)
Produkt ist nicht verfügbar
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AOT12N30LAlpha & Omega Semiconductor Inc.Description: MOSFET N CH 300V 11.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT12N40LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 7A; 184W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 7A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 590mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 17nC
Power dissipation: 184W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.54 EUR
Mindestbestellmenge: 2 Stücke
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AOT12N40LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 400V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 590mOhm @ 6A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT12N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
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AOT12N50ALPHA&OMEGATransistor N-Channel MOSFET; 500V; 30V; 520mOhm; 12A; 250W; -55°C ~ 150°C; AOT12N50 TAOT12n50
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.72 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT12N50ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: TO220
Mounting: THT
Gate charge: 37nC
Drain current: 8.4A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.94 EUR
52+1.67 EUR
58+1.48 EUR
100+1.33 EUR
Mindestbestellmenge: 44 Stücke
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AOT12N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT12N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
99+1.77 EUR
Mindestbestellmenge: 99 Stücke
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AOT12N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
99+1.76 EUR
Mindestbestellmenge: 99 Stücke
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AOT12N60ALPHA&OMEGATransistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 278W; -55°C ~ 150°C; AOT12N60 TAOT12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.59 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT12N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
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AOT12N60FDAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT12N60FDLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
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AOT12N60_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO220
Produkt ist nicht verfügbar
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AOT12N65AOSТранзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT12N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
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AOT12N65Alpha & Omega Semiconductor
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
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AOT12N65_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
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AOT13N50ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.5A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 510mΩ
Mounting: THT
Gate charge: 30.7nC
Kind of channel: enhancement
auf Bestellung 915 Stücke:
Lieferzeit 14-21 Tag (e)
40+2.14 EUR
44+1.94 EUR
50+1.7 EUR
100+1.54 EUR
250+1.45 EUR
Mindestbestellmenge: 40 Stücke
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AOT13N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT13N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 13A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 6.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT1404LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 15A/220A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 220A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT1404L
Produktcode: 177805
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Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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AOT1404LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 157A; 208W; TO220
Mounting: THT
Power dissipation: 208W
Gate charge: 71nC
Polarisation: unipolar
Drain current: 157A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220
On-state resistance: 4.2mΩ
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.53 EUR
38+2.3 EUR
41+2.11 EUR
100+2.06 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT14N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.63 EUR
50+2.27 EUR
100+2.05 EUR
500+1.64 EUR
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AOT14N50FDAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 7A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
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AOT15B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 196 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 21ns/73ns
Switching Energy: 420µJ (on), 110µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 25.4 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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AOT15B60DALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 83.3W; TO220; Eoff: 0.11mJ; Eon: 0.42mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 83.3W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Turn-off time: 83ns
Turn-off switching energy: 0.11mJ
Turn-on switching energy: 0.42mJ
Collector-emitter saturation voltage: 1.6V
Turn-on time: 40ns
auf Bestellung 880 Stücke:
Lieferzeit 14-21 Tag (e)
39+2.21 EUR
42+2.06 EUR
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AOT15B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 30A 167W 3-Pin(3+Tab) TO-220 Tube
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AOT15B60DALPHA&OMEGATransistor IGBT; 600V; 20V; 30A; 60A; 167W; 5,6V; 25,4nC; -55°C~175°C;   AOT15B60D TAOT15b60d
Anzahl je Verpackung: 10 Stücke
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Lieferzeit 7-14 Tag (e)
10+4.15 EUR
Mindestbestellmenge: 10 Stücke
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AOT15B65M1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 15A TO220
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 32 nC
Test Condition: 400V, 15A, 20Ohm, 15V
Switching Energy: 290µJ (on), 200µJ (off)
Td (on/off) @ 25°C: 13ns/116ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
Reverse Recovery Time (trr): 317 ns
Power - Max: 214 W
Current - Collector Pulsed (Icm): 45 A
Input Type: Standard
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AOT15B65MQ1Alpha & Omega Semiconductor Inc.Description: IGBT 15A
Part Status: Active
Packaging: Tape & Reel (TR)
Gate Charge: 32 nC
Test Condition: 400V, 15A, 20Ohm, 15V
Switching Energy: 290µJ (on), 200µJ (off)
Td (on/off) @ 25°C: 15ns/94ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
Reverse Recovery Time (trr): 106 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 214 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Produkt ist nicht verfügbar
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AOT15B65MQ1Alpha & Omega SemiconductorAlpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
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AOT15S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 15A TO220
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOT15S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220 T/R
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AOT15S65L
Produktcode: 196122
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Transistoren > MOSFET N-CH
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AOT15S65LAOSAOT15S65L N-Channel 650 V 15A (Tc) 208W (Tc) Through Hole TO-220 Транзистори
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AOT15S65LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 15A TO220
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.33 EUR
10+4.36 EUR
Mindestbestellmenge: 4 Stücke
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AOT1606LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 12A/178A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
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AOT1608LAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
950+1.81 EUR
Mindestbestellmenge: 950 Stücke
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AOT1608LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 11A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 25 V
Produkt ist nicht verfügbar
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AOT1608LALPHA&OMEGATransistor N-Channel MOSFET; 60V; 20V; 13,2mOhm; 140A; 333W; -55°C ~ 175°C; AOT1608L TAOT1608l
Anzahl je Verpackung: 10 Stücke
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Lieferzeit 7-14 Tag (e)
10+3.49 EUR
Mindestbestellmenge: 10 Stücke
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AOT160A60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 24A TO220
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AOT16N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220
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AOT16N50
Produktcode: 128900
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Transistoren > MOSFET N-CH
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AOT16N50ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 278W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 42.8nC
Kind of channel: enhancement
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AOT16N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
Produkt ist nicht verfügbar
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AOT190A60CLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOT190A60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOT1N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.9A; 41.7W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.9A
Power dissipation: 41.7W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 6.1nC
Produkt ist nicht verfügbar
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AOT1N60ALPHA&OMEGATransistor N-Channel MOSFET; 600V; 30V; 9Ohm; 1,3A; 41,7W; -55°C ~ 150°C; AOT1N60 TAOT1n60
Anzahl je Verpackung: 25 Stücke
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Lieferzeit 7-14 Tag (e)
50+0.92 EUR
Mindestbestellmenge: 50 Stücke
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AOT1N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 1.3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.28 EUR
50+1.06 EUR
100+0.94 EUR
Mindestbestellmenge: 10 Stücke
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AOT20B65M1AOSIGBT 650V 20A TO220 Транзистори
Produkt ist nicht verfügbar
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AOT20B65M1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 20A TO220
Power - Max: 227 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 46 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 470µJ (on), 270µJ (off)
Td (on/off) @ 25°C: 26ns/122ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Reverse Recovery Time (trr): 322 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOT20B65M1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 40A 227W 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
87+2.01 EUR
1000+1.96 EUR
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AOT20B65M1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 40A 227W 3-Pin(3+Tab) TO-220 Tube
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AOT20B65M1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 40A 227W 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
87+2 EUR
1000+1.92 EUR
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AOT20C60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 463W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOT20C60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO220
Power Dissipation (Max): 463W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Produkt ist nicht verfügbar
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AOT20C60PLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3607 pF @ 100 V
Produkt ist nicht verfügbar
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AOT20N25LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 250V 20A TO220
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 25 V
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AOT20N60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R
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 Mindestbestellmenge: 1000 Stücke
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AOT20N60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT20N60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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AOT20S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT20S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT20S60LAOSMOSFET N-CH 600V 20A TO220 Транзистори
Produkt ist nicht verfügbar
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AOT20S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.6 EUR
50+4.44 EUR
100+4.03 EUR
500+3.32 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT210LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 20A/105A TO220
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 176W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
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AOT2140LAlpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 9985 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT2142LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT2142LAlpha & Omega SemiconductorTrans MOSFET N-CH 40V 50A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT2144LAlpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT2144LAlpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT2146LAlpha & Omega SemiconductorTrans MOSFET N-CH 40V 42A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.7 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT2146LAlpha & Omega SemiconductorTrans MOSFET N-CH 40V 42A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.7 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT2146LAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT22N50LAlpha & Omega SemiconductorTrans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT22N50LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT240LALPHA&OMEGATransistor N-Channel MOSFET; 40V; 20V; 4,7mOhm; 105A; 176W; -55°C ~ 175°C; AOT240L TAOT240l
Anzahl je Verpackung: 10 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.55 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT240LAlpha & Omega SemiconductorTrans MOSFET N-CH 40V 105A 3-Pin(3+Tab) TO-220 T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT240LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 20A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 176W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT240LALPHA&OMEGATransistor N-Channel MOSFET; 40V; 20V; 4,7mOhm; 105A; 176W; -55°C ~ 175°C; AOT240L TAOT240l
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.55 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT2500LAlpha & Omega SemiconductorTrans MOSFET N-CH 150V 152A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT2500LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 11.5/152A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 152A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
auf Bestellung 4622 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.41 EUR
50+5.45 EUR
100+4.97 EUR
500+4.13 EUR
1000+3.87 EUR
2000+3.68 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT2500LAOSTrans MOSFET N-CH 150V 152A TO-220 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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