Produkte > CSD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| CSD202410LG | Pentair | CSD202410LG | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD202410LG | Hoffman Enclosures, Inc. | Description: WALL-MOUNT TYPE 4 12 ENCLOSURE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD20248 | Hoffman Enclosures, Inc. | Description: BOX STEEL GRAY 24.02"L X 20"W Features: Sealing Gasket, Wall Mount Packaging: Bulk Color: Gray Size / Dimension: 24.016" L x 20.000" W (610.00mm x 508.00mm) Material: Metal, Steel Thickness: 18 Gauge Height: 7.992" (203.00mm) Design: Hinged Door, Lid Ratings: IP66, NEMA 4,12,13, UL-508A Container Type: Box Area (L x W): 480in² (3097cm²) Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22202W15 | Texas Instruments | Description: MOSFET P-CH 8V 10A 9DSBGA Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22202W15 | Texas Instruments | MOSFETs P-CH NexFET Pwr MOSF ET | auf Bestellung 7901 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22202W15 | Texas Instruments | Description: MOSFET P-CH 8V 10A 9DSBGA Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 2A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V | auf Bestellung 52180 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22204W | Texas Instruments | Description: MOSFET P-CH 8V 5A 9DSBGA Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V | auf Bestellung 6769 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22204W | Texas Instruments | MOSFET -8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection 9-DSBGA | auf Bestellung 1785 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22204W | Texas Instruments | Description: MOSFET P-CH 8V 5A 9DSBGA Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22204WT | Texas Instruments | Description: MOSFET P-CH 8V 5A 9DSBGA Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V | auf Bestellung 5417 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22204WT | Texas Instruments | Description: MOSFET P-CH 8V 5A 9DSBGA Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 9-DSBGA Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, DSBGA Packaging: Tape & Reel (TR) | auf Bestellung 5250 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22204WT | Texas Instruments | MOSFET 8-V P-Channel NexFET Power MOSFET | auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22205L | Texas Instruments | MOSFET -8V, P channel NexFET™ power MOSFET, single LGA 1.2 mm x 1.2 mm, 9.9 mOhm, gate ESD protection 4-PICOSTAR -55 to 150 | auf Bestellung 5157 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22205L | Texas Instruments | Description: MOSFET P-CH 8V 7.4A 4PICOSTAR Packaging: Cut Tape (CT) Package / Case: 4-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 4-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V | auf Bestellung 7478 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22205L | Texas Instruments | Description: MOSFET P-CH 8V 7.4A 4PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 4-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 4-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22205LT | Texas Instruments | Description: MOSFET P-CH 8V 7.4A 4PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 4-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 4-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V | auf Bestellung 29750 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22205LT | Texas Instruments | Description: MOSFET P-CH 8V 7.4A 4PICOSTAR Vgs(th) (Max) @ Id: 1.05V @ 250µA Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFLGA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 4-PICOSTAR | auf Bestellung 30195 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22205LT | Texas Instruments | MOSFETs -8V, P channel NexFET™ power MOSFET, single LGA 1.2 mm x 1.2 mm, 9.9 mOhm, gate ESD protection 4-PICOSTAR -55 to 150 | auf Bestellung 4002 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22206W | Texas Instruments | Description: MOSFET P-CH 8V 5A 9DSBGA Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 4 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22206W | Texas Instruments | MOSFET -8V, P channel NexFET power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection 9-DSBGA -55 to 150 | auf Bestellung 8406 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22206W | Texas Instruments | Description: MOSFET P-CH 8V 5A 9DSBGA Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 4 V | auf Bestellung 6473 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22206WT | Texas Instruments | MOSFET -8V, P channel NexFET power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection 9-DSBGA -55 to 150 | auf Bestellung 497 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22206WT | Texas Instruments | Description: MOSFET P-CH 8V 5A 9DSBGA Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 4 V | auf Bestellung 14500 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD22206WT | Texas Instruments | Description: MOSFET P-CH 8V 5A 9DSBGA Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 4 V | auf Bestellung 14901 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23201W10 | Texas Instruments | Description: MOSFET P-CH 12V 2.2A 4DSBGA Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 4-DSBGA (1x1) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, DSBGA Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23201W10 | Texas Instruments | P-CHANNEL NexFET MOSFET 12V, 7A, 66mohm CSD23201W10 TCSD23201w10 Anzahl je Verpackung: 50 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| CSD23201W10 | Texas Instruments | Description: MOSFET P-CH 12V 2.2A 4DSBGA Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 4-DSBGA (1x1) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, DSBGA Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23201W10 | Texas Instruments | Description: MOSFET P-CH 12V 2.2A 4DSBGA Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 4-DSBGA (1x1) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, DSBGA Packaging: Bulk | auf Bestellung 455050 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23202W10 | Texas Instruments | Description: MOSFET P-CH 12V 2.2A 4DSBGA Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-DSBGA (1x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 6 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23202W10 | Texas Instruments | MOSFETs 12V P-channel NexFET Pwr MOSFET A 595-CS A 595-CSD23202W10T | auf Bestellung 5012 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23202W10 | Texas Instruments | Description: MOSFET P-CH 12V 2.2A 4DSBGA Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-DSBGA (1x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 6 V | auf Bestellung 4443 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23202W10T | Texas Instruments | Description: MOSFET P-CH 12V 2.2A 4DSBGA Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-DSBGA (1x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 6 V | auf Bestellung 12273 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23202W10T | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD23202W10T - Leistungs-MOSFET, p-Kanal, 12 V, 2.2 A, 0.044 ohm, DSBGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 2.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 1W Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 1W Bauform - Transistor: DSBGA Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.044ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 662 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD23202W10T | Texas Instruments | MOSFETs 12V PCH NexFET A 595 -CSD23202W10 A 595- A 595-CSD23202W10 | auf Bestellung 1134 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23202W10T | Texas Instruments | Description: MOSFET P-CH 12V 2.2A 4DSBGA Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 4-DSBGA (1x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 6 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23202W10T | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD23202W10T - Leistungs-MOSFET, p-Kanal, 12 V, 2.2 A, 0.044 ohm, DSBGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 2.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 1W Bauform - Transistor: DSBGA Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 662 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD23203W | Texas Instruments | Description: MOSFET P-CH 8V 3A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V | auf Bestellung 1908 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23203W | Texas Instruments | Description: MOSFET P-CH 8V 3A 6DSBGA Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23203W | Texas Instruments | MOSFETs CSD23203W 8 V P-chan MOSFET 6-DSBGA A 595-CSD23203WT | auf Bestellung 6864 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23203WT | Texas Instruments | MOSFETs CSD23203W 8V P-Ch Ne xFET Power MOSFET A 595-CSD23203W | auf Bestellung 286 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23203WT | Texas Instruments | Description: MOSFET P-CH 8V 3A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V | auf Bestellung 39033 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23203WT | Texas Instruments | Description: MOSFET P-CH 8V 3A 6DSBGA Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 19.4mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 4 V | auf Bestellung 38750 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23280F3 | Texas Instruments | MOSFETs -12-V P channel Nex FET power MOSFET s A 595-CSD23280F3T | auf Bestellung 7289 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23280F3 | Texas Instruments | Description: MOSFET P-CH 12V 1.8A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23280F3 | Texas Instruments | Description: MOSFET P-CH 12V 1.8A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V | auf Bestellung 6078 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23280F3 | Texas Instruments | MOSFET P-CH 12V 1.8A PICOSTAR Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23280F3T | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD23280F3T - Leistungs-MOSFET, p-Kanal, 12 V, 1.8 A, 0.097 ohm, LGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 1.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 500mW Gate-Source-Schwellenspannung, max.: 650mV euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: LGA Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: FemtoFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.097ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.097ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 65 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23280F3T | Texas Instruments | Description: MOSFET P-CH 12V 1.8A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V | auf Bestellung 11750 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23280F3T | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD23280F3T - Leistungs-MOSFET, p-Kanal, 12 V, 1.8 A, 0.097 ohm, LGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 1.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 500mW Gate-Source-Schwellenspannung, max.: 650mV euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: LGA Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: FemtoFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.097ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.097ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23280F3T | Texas Instruments | MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23280F3 | auf Bestellung 2916 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23280F3T | Texas Instruments | Description: MOSFET P-CH 12V 1.8A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 6 V | auf Bestellung 12049 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23285F5 | Texas Instruments | Description: MOSFET P-CH 12V 5.4A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 3-PICOSTAR (1.49x0.73) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V | auf Bestellung 18339 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23285F5 | Texas Instruments | MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23285F5T | auf Bestellung 7433 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23285F5 | Texas Instruments | Description: MOSFET P-CH 12V 5.4A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 3-PICOSTAR (1.49x0.73) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23285F5 | TEXAS INSTRUMENTS | Category: SMD P channel transistors Description: Transistor: P-MOSFET; 12V; 3.3A; 1.4W; PICOSTAR3 Case: PICOSTAR3 Type of transistor: P-MOSFET Mounting: SMD Drain-source voltage: 12V Gate-source voltage: -6V Drain current: 3.3A Power dissipation: 1.4W Kind of channel: enhancement | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD23285F5T | TEXAS INSTRUMENTS | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.4A; Idm: -31A; 1.4W Case: PICOSTAR3 Technology: NexFET™ Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Pulsed drain current: -31A Drain-source voltage: -12V Gate-source voltage: ±6V Drain current: -5.4A On-state resistance: 0.13Ω Power dissipation: 1.4W Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23285F5T | Texas Instruments | Description: MOSFET P-CH 12V 5.4A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 3-PICOSTAR (1.49x0.73) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V | auf Bestellung 2018 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23285F5T | Texas Instruments | Description: MOSFET P-CH 12V 5.4A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 3-PICOSTAR (1.49x0.73) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23285F5T | Texas Instruments | MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23285F5 | auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23381F4 | Texas Instruments | Trans MOSFET P-CH 12V 2.3A 3-Pin PicoStar T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23381F4 | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD23381F4 - Leistungs-MOSFET, p-Kanal, 12 V, 2.3 A, 0.15 ohm, LGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 2.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: LGA Anzahl der Pins: 3Pin(s) Produktpalette: FemtoFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 55 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23381F4 | Texas Instruments | MOSFETs 12V P-CH FemtoFET MOSFET | auf Bestellung 26959 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23381F4 | Texas Instruments | Description: MOSFET P-CH 12V 2.3A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V | auf Bestellung 235648 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23381F4 | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD23381F4 - Leistungs-MOSFET, p-Kanal, 12 V, 2.3 A, 0.15 ohm, LGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 2.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: LGA Anzahl der Pins: 3Pin(s) Produktpalette: FemtoFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23381F4 | Texas Instruments | Trans MOSFET P-CH 12V 2.3A 3-Pin PicoStar T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23381F4 | Texas Instruments | Trans MOSFET P-CH 12V 2.3A 3-Pin PicoStar T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23381F4 | Texas Instruments | Description: MOSFET P-CH 12V 2.3A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V | auf Bestellung 234000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23381F4T | Texas Instruments | MOSFET 12V,P-Ch FemtoFET MOSFET | auf Bestellung 2398 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23381F4T | Texas Instruments | Description: MOSFET P-CH 12V 2.3A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V | auf Bestellung 3250 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23381F4T | Texas Instruments | Trans MOSFET P-CH 12V 2.3A 3-Pin PicoStar T/R | auf Bestellung 217 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD23381F4T | Texas Instruments | Description: MOSFET P-CH 12V 2.3A 3PICOSTAR Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23381F4T | Texas Instruments | Trans MOSFET P-CH 12V 2.3A 3-Pin PicoStar T/R | auf Bestellung 217 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD23381F4T | Texas Instruments | MOSFET P-CH 12V 3PICOSTAR Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23381F4T | Texas Instruments | Trans MOSFET P-CH 12V 2.3A 3-Pin PicoStar T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23381F4T | Texas Instruments | Description: MOSFET P-CH 12V 2.3A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 6 V | auf Bestellung 3362 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23381F4T | Texas Instruments | Trans MOSFET P-CH 12V 2.3A 3-Pin PicoStar T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23382F4 | Texas Instruments | Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR (1x0.60) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V | auf Bestellung 181373 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23382F4 | Texas Instruments | MOSFET P-Channel MOSFET | auf Bestellung 11220 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23382F4 | Texas Instruments | Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR (1x0.60) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V | auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23382F4T | Texas Instruments | Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23382F4T | Texas Instruments | Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Bulk | auf Bestellung 1604 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23382F4T | Texas Instruments | MOSFETs P-Ch NexFET Power MOSFET | auf Bestellung 5618 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23382F4T | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD23382F4T - Leistungs-MOSFET, p-Kanal, 12 V, 3.5 A, 0.066 ohm, LGA, Oberflächenmontage Verlustleistung: 500 Kanaltyp: p-Kanal Drain-Source-Durchgangswiderstand: 0.066 Qualifikation: - SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD23382F4T | Texas Instruments | Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V | auf Bestellung 1148 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD23382F4T | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD23382F4T - Leistungs-MOSFET, p-Kanal, 12 V, 3.5 A, 0.066 ohm, LGA, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12 Dauer-Drainstrom Id: 3.5 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 500 Gate-Source-Schwellenspannung, max.: 800 Verlustleistung: 500 Bauform - Transistor: LGA Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.066 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.066 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD2410 | Crydom Co. | Description: RELAY SSR 10A 240VAC DC IN | Produkt ist nicht verfügbar | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD2410F | Sensata-Crydom | Description: RELAY SSR 24-280 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD24168 | Hoffman Enclosures, Inc. | Description: BOX STEEL GRAY 24.02"L X 15.98"W Features: Sealing Gasket, Wall Mount Packaging: Bulk Color: Gray Size / Dimension: 24.016" L x 15.984" W (610.00mm x 406.00mm) Material: Metal, Steel Thickness: 18 Gauge Height: 7.992" (203.00mm) Design: Hinged Door, Lid Ratings: IP66, NEMA 4,12,13, UL-508A Container Type: Box Area (L x W): 384in² (2477cm²) | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD242010 | Hoffman Enclosures, Inc. | Description: BOX STEEL GRAY 24.02"L X 20"W Area (L x W): 480in² (3097cm²) Container Type: Box Ratings: IP66, NEMA 4,12,13, UL-508A Design: Hinged Door, Lid Height: 10.000" (254.00mm) Thickness: 18 Gauge Material: Metal, Steel Size / Dimension: 24.016" L x 20.000" W (610.00mm x 508.00mm) Color: Gray Features: Sealing Gasket, Wall Mount Packaging: Bulk | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD242010 | NVENT HOFFMAN | Description: NVENT HOFFMAN - CSD242010 - ENCLOSURE, WALL MOUNT, CONCEPT, STEEL, GRAY Gehäusefarbe: Grey Außenhöhe - imperial: 24 Anzahl der Löcher für Schalter: - IP-Schutzart: IP66 NEMA-Bewertung: NEMA 4, 12, 13 Außentiefe - metrisch: 254 Außenhöhe - metrisch: 610 Außentiefe - imperial: 10 Außenbreite - metrisch: 508 Produktpalette: Concept Series Gehäusetyp: Electrical / Industrial Außenbreite - Zoll: 20 Gehäusematerial: Steel SVHC: No SVHC (15-Jan-2019) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD24208 | Hoffman Enclosures, Inc. | Description: BOX STEEL GRAY 24.02"L X 20"W Features: Sealing Gasket, Wall Mount Packaging: Bulk Color: Gray Size / Dimension: 24.016" L x 20.000" W (610.00mm x 508.00mm) Material: Metal, Steel Thickness: 18 Gauge Height: 7.992" (203.00mm) Design: Hinged Door, Lid Ratings: IP66, NEMA 4,12,13, UL-508A Container Type: Box Area (L x W): 480in² (3097cm²) | auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD242410 | Hoffman Enclosures, Inc. | Description: BOX STEEL GRAY 24.02"L X 24.02"W Features: Sealing Gasket, Wall Mount Packaging: Bulk Color: Gray Size / Dimension: 24.016" L x 24.016" W (610.00mm x 610.00mm) Material: Metal, Steel Thickness: 16 Gauge Height: 10.000" (254.00mm) Design: Hinged Door, Lid Ratings: IP66, NEMA 4,12,13, UL-508A Container Type: Box Area (L x W): 576in² (3716cm²) | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD242410W | Hoffman Enclosures, Inc. | Description: BOX S STEEL GRAY 24"L X 10"W Packaging: Bulk Color: Gray Size / Dimension: 24.000" L x 10.000" W (609.60mm x 254.00mm) Material: Metal, Stainless Steel Thickness: 16 Gauge Height: 24.000" (609.60mm) Design: Hinged Door, Lid Ratings: IP66, NEMA 3R,4,4X,12,13, UL-508A Container Type: Box Area (L x W): 240in² (1548cm²) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD242410WLG | Hoffman Enclosures, Inc. | Description: WALL-MOUNT ENCL. WINDOW Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CSD242412 | Hoffman Enclosures, Inc. | Description: BOX STEEL GRAY 24.02"L X 24.02"W Part Status: Active Area (L x W): 576in² (3716cm²) Container Type: Box Ratings: IP66, NEMA 4,12,13, UL-508A Design: Hinged Door, Lid Height: 12.008" (305.00mm) Thickness: 16 Gauge Material: Metal, Steel Size / Dimension: 24.016" L x 24.016" W (610.00mm x 610.00mm) Color: Gray Features: Sealing Gasket, Wall Mount Packaging: Bulk | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD24246 | Hoffman Enclosures, Inc. | Description: BOX STL GRAY 24.016"L X 24.016"W Features: Sealing Gasket, Wall Mount Packaging: Bulk Color: Gray Size / Dimension: 24.016" L x 24.016" W (610.00mm x 610.00mm) Material: Metal, Steel Thickness: 16 Gauge Height: 5.984" (152.00mm) Design: Hinged Door, Lid Ratings: IP66, NEMA 4,12,13, UL-508A Container Type: Box Area (L x W): 576in² (3716cm²) Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD24248 | Hoffman Enclosures, Inc. | Description: BOX STEEL GRAY 24.02"L X 24.02"W Area (L x W): 576in² (3716cm²) Container Type: Box Ratings: IP66, NEMA 4,12,13, UL-508A Design: Hinged Door, Lid Height: 7.992" (203.00mm) Thickness: 16 Gauge Material: Metal, Steel Size / Dimension: 24.016" L x 24.016" W (610.00mm x 610.00mm) Color: Gray Features: Sealing Gasket, Wall Mount Packaging: Bulk | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD24248SS | Hoffman Enclosures, Inc. | Description: BOX S STL NAT 24.02"L X 24.02"W Features: Sealing Gasket, Stainless Steel Hinge, Wall Mount Packaging: Bulk Color: Natural Size / Dimension: 24.016" L x 24.016" W (610.00mm x 610.00mm) Material: Metal, Stainless Steel Thickness: 16 Gauge Height: 7.992" (203.00mm) Design: Hinged Door, Lid Ratings: IP66, NEMA 3R,4,4X,12,13, UL-508A Container Type: Box Area (L x W): 576in² (3716cm²) | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD2425 | SENSATA-CRYDOM / PARTNER STOCK | Description: SENSATA-CRYDOM / PARTNER STOCK - CSD2425 - SSR RELAY PANEL MOUNT IP00 tariffCode: 85414900 productTraceability: No rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Produktpalette: CSD Series | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD2425 | SENSATA-CRYDOM / PARTNER STOCK | Description: SENSATA-CRYDOM / PARTNER STOCK - CSD2425 - SSR RELAY PANEL MOUNT IP00 tariffCode: 85414900 productTraceability: No rohsCompliant: YES euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Produktpalette: CSD Series SVHC: No SVHC (07-Nov-2024) | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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