Produkte > DMC
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| DMC2700UDM-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.34A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.12W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active | auf Bestellung 913931 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2700UDM-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.34A/1.14A 6-Pin SOT-26 T/R | auf Bestellung 286 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 286 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2700UDM-7 | DIODES INC. | Description: DIODES INC. - DMC2700UDM-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 1.34 A, 1.34 A, 0.4 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.34A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 1.34A Drain-Source-Durchgangswiderstand, p-Kanal: 0.7ohm Verlustleistung, p-Kanal: 1.12W Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.4ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.12W Betriebstemperatur, max.: 150°C | auf Bestellung 1185 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2700UDM-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.34A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.12W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active | auf Bestellung 912000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2700UDM-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.34A/1.14A 6-Pin SOT-26 T/R | auf Bestellung 286 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 286 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2700UDM-7 | DIODES INC. | Description: DIODES INC. - DMC2700UDM-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 1.34 A, 1.34 A, 0.4 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.34A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 1.34A Drain-Source-Durchgangswiderstand, p-Kanal: 0.7ohm Verlustleistung, p-Kanal: 1.12W Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.4ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.12W Betriebstemperatur, max.: 150°C | auf Bestellung 1185 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2700UDM-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 125507 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2700UDM-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.34A/1.14A 6-Pin SOT-26 T/R | auf Bestellung 6447000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2700UDMQ-7 | DIODES INC. | Description: DIODES INC. - DMC2700UDMQ-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 1.34 A, 1.34 A, 0.4 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.34A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 1.34A Drain-Source-Durchgangswiderstand, p-Kanal: 0.7ohm Verlustleistung, p-Kanal: 1.12W Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.4ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.12W Betriebstemperatur, max.: 150°C | auf Bestellung 645 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2700UDMQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.34A/1.14A Automotive AEC-Q100 6-Pin SOT-26 T/R | auf Bestellung 552000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2700UDMQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.34A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.12W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta), 1.14A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V, 0.62nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4863 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2700UDMQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 4251 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2700UDMQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.34A/1.14A Automotive AEC-Q100 6-Pin SOT-26 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2700UDMQ-7 | DIODES INC. | Description: DIODES INC. - DMC2700UDMQ-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 1.34 A, 1.34 A, 0.4 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.34A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 1.34A Drain-Source-Durchgangswiderstand, p-Kanal: 0.7ohm Verlustleistung, p-Kanal: 1.12W Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.4ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.12W Betriebstemperatur, max.: 150°C | auf Bestellung 645 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2700UDMQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.34A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.12W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta), 1.14A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V, 0.62nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UDW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UDW-13 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.75A/0.6A T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UDW-13 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.75A/0.6A T/R | auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UDW-13 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.75A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 150000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.75A/0.6A 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UDW-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.75A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 6126 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UDW-7 | DIODES INC. | Description: DIODES INC. - DMC2710UDW-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 750 mA, 750 mA, 0.18 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 750mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 750mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.18ohm Verlustleistung, p-Kanal: 380mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.18ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 380mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.75A/0.6A 6-Pin SOT-363 T/R | auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UDW-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.75A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.75A/0.6A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UDW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V SOT363 T&R 3K | auf Bestellung 58871 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UDW-7 | DIODES INC. | Description: DIODES INC. - DMC2710UDW-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 750 mA, 750 mA, 0.18 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 750mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 750mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.18ohm Verlustleistung, p-Kanal: 380mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.18ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 380mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.75A/0.6A 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UDW-7 | Diodes | MOSFET BVDSS: 8V-24V SOT363 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UDWQ-13 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.75A/0.6A Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 160000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UDWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UDWQ-13 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.75A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UDWQ-13 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.75A/0.6A Automotive AEC-Q101 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UDWQ-7 | DIODES INC. | Description: DIODES INC. - DMC2710UDWQ-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 750 mA, 750 mA, 0.45 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 750mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 750mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.75ohm Verlustleistung, p-Kanal: 380mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.45ohm productTraceability: No usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 380mW Betriebstemperatur, max.: 150°C | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UDWQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.75A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UDWQ-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 0.75A/0.6A Automotive AEC-Q101 6-Pin SOT-363 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UDWQ-7 | DIODES INC. | Description: DIODES INC. - DMC2710UDWQ-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 750 mA, 750 mA, 0.45 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 750mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 750mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.75ohm Verlustleistung, p-Kanal: 380mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.45ohm productTraceability: No usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 380mW Betriebstemperatur, max.: 150°C | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UDWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT363 T&R 3K | auf Bestellung 8878 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UDWQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.75A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5562 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UV-13 | Diodes Zetex | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UV-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT563 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UV-13 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.1A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 460mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT563 T&R 3K | auf Bestellung 3034 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UV-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.1A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 460mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 132000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UV-7 | Diodes Zetex | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UV-7 | Diodes Zetex | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UV-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.1A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 460mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 133971 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UV-7 | Diodes Zetex | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UVQ-13 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.1A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 460mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UVQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UVQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UVQ-7 | Diodes Zetex | Complementary Pair Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UVQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.1A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 460mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 535 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UVQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.1A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 460mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UVT-13 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.2A TSOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-23-6 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UVT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UVT-13 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.2A/0.9A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UVT-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.2A/0.9A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2710UVT-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.2A TSOT23-6 Supplier Device Package: TSOT-23-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 500mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) | auf Bestellung 166662 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 3274 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2710UVT-7 | Diodes Zetex | Trans MOSFET N/P-CH 20V 1.2A/0.9A 6-Pin TSOT-26 T/R | auf Bestellung 165000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2710UVT-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 1.2A TSOT23-6 Supplier Device Package: TSOT-23-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 500mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) | auf Bestellung 165000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC274 | DMC Tools | Tool Kits & Cases AFM8 &36 Positioner Tool Kit | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC286-02 | DMC Tools | Tool Kits & Cases General Aviation Kit Elec Wiring Conn | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC292M | ITT Cannon, LLC | Description: CIR CRIMP TOOL KIT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC2990UDJ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.45A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active | auf Bestellung 104061 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2990UDJ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 32244 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2990UDJ-7 | DIODES INC. | Description: DIODES INC. - DMC2990UDJ-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 450 mA, 450 mA, 0.6 ohm tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 450mA Dauer-Drainstrom Id, p-Kanal: 450mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 20V MSL: - Dauer-Drainstrom Id, n-Kanal: 450mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.6ohm Verlustleistung, p-Kanal: 350mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-963 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.6ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 350mW Betriebstemperatur, max.: 150°C | auf Bestellung 10555 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2990UDJ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.45A SOT963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2990UDJ-7 | DIODES INC. | Description: DIODES INC. - DMC2990UDJ-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 450 mA, 450 mA, 0.6 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 450mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: - Dauer-Drainstrom Id, n-Kanal: 450mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.6ohm Verlustleistung, p-Kanal: 350mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-963 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.6ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 350mW Betriebstemperatur, max.: 150°C | auf Bestellung 10555 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC2990UDJQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.45A SOT963 Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), 310mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SOT-963 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V | auf Bestellung 1175755 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2990UDJQ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.45A SOT963 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SOT-963 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), 310mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Tape & Reel (TR) | auf Bestellung 1160000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2990UDJQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 54449 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2990UDJQ-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 29540 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2991UDA-7B | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.48A 6DFN Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 | auf Bestellung 2318457 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2991UDA-7B | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-6 T&R 10K | auf Bestellung 9374 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2991UDJ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.5A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 | auf Bestellung 519695 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2991UDJ-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.5A SOT963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 | auf Bestellung 510000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2991UDJ-7B | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.5A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 | auf Bestellung 475637 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2991UDJ-7B | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.5A SOT963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 380mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 | auf Bestellung 470000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2991UDR4-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.5A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 370mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V, 17pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-6 (Type UXC) | auf Bestellung 2825 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC2991UDR4-7 | Diodes Incorporated | Description: MOSFET N/P-CH 20V 0.5A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 370mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V, 17pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V, 0.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-6 (Type UXC) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC30 | DMC Tools | Tool Kits & Cases Airbus A300,310,330 340 Tool Kit | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC3016LDV | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC3016LDV-13 | Diodes Zetex | Trans MOSFET N/P-CH 30V 21A/15A 8-Pin PowerDI EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3016LDV-13 | DIODES INC. | Description: DIODES INC. - DMC3016LDV-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 21 A, 21 A, 0.012 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 21A Drain-Source-Durchgangswiderstand, p-Kanal: 0.025ohm Verlustleistung, p-Kanal: 900mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.012ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 900mW Betriebstemperatur, max.: 150°C | auf Bestellung 1465 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3016LDV-13 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 21A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6930 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3016LDV-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS 31V-40V | auf Bestellung 1645 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3016LDV-13 | Diodes Zetex | Trans MOSFET N/P-CH 30V 21A/15A 8-Pin PowerDI EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3016LDV-13 | DIODES INC. | Description: DIODES INC. - DMC3016LDV-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 21 A, 21 A, 0.012 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 21A Drain-Source-Durchgangswiderstand, p-Kanal: 0.025ohm Verlustleistung, p-Kanal: 900mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.012ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 900mW Betriebstemperatur, max.: 150°C | auf Bestellung 1465 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3016LDV-13 | Diodes Zetex | Trans MOSFET N/P-CH 30V 21A/15A 8-Pin PowerDI EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3016LDV-13 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 21A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3016LDV-7 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 21A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC3016LDV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS 31V-40V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC3016LDV-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 21A/15A 8-Pin PowerDI 3333 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC3016LDV-7 | DIODES INC. | Description: DIODES INC. - DMC3016LDV-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 21 A, 21 A, 9500 µohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 21A Drain-Source-Durchgangswiderstand, p-Kanal: 9500µohm Verlustleistung, p-Kanal: 900mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 9500µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 900mW Betriebstemperatur, max.: 150°C | auf Bestellung 1340 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3016LDV-7 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 21A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3016LDV-7 | DIODES INC. | Description: DIODES INC. - DMC3016LDV-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 21 A, 21 A, 9500 µohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 21A Drain-Source-Durchgangswiderstand, p-Kanal: 9500µohm Verlustleistung, p-Kanal: 900mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 9500µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 900mW Betriebstemperatur, max.: 150°C | auf Bestellung 1340 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3016LNS-13 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 9A PWRDI3333 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 10V, 28mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.8A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.3W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMC3016LNS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS 31V-40V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |