Produkte > GT0
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GT06-111-049 | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 7862 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT06-111-049 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Tape & Reel (TR) Inductance: 880µH Size / Dimension: 0.430" L x 0.630" W (11.00mm x 16.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 49Vµs Height - Seated (Max): 0.295" (7.50mm) Grade: Automotive Qualification: AEC-Q200 | Produkt ist nicht verfügbar | Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06-111-100 | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 17587 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT06-111-100 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Cut Tape (CT) Inductance: 2mH Size / Dimension: 0.430" L x 0.630" W (11.00mm x 16.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 100VµS Height - Seated (Max): 0.295" (7.50mm) Grade: Automotive Qualification: AEC-Q200 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06-111-100 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Tape & Reel (TR) Inductance: 2mH Size / Dimension: 0.430" L x 0.630" W (11.00mm x 16.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1:1 ET (Volt-Time): 100VµS Height - Seated (Max): 0.295" (7.50mm) Grade: Automotive Qualification: AEC-Q200 | Produkt ist nicht verfügbar | Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06-122-053 | ICE Components | Pulse Transformers Gate Drive Transformer | auf Bestellung 1019 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT060N04D3 | GOFORD Semiconductor | Trans MOSFET N-CH 40V 40A 8-Pin DFN EP | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| GT060N04D3 | Goford Semiconductor | Description: N40V,RD(MAX)<6.5M@10V,RD(MAX)<10 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N04D3 | Goford Semiconductor | Description: MOSFET N-CH 40V 40A DFN3*3-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT060N04D3 | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 56A; 60W; DFN3x3-8 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Power dissipation: 60W Case: DFN3x3-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 20nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N04D3 | Goford Semiconductor | Description: N40V,RD(MAX)<6.5M@10V,RD(MAX)<10 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V | auf Bestellung 8325 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT060N04D5 | Goford Semiconductor | Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2. Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (4.9x5.75) Vgs(th) (Max) @ Id: 2.3V @ 250µA | auf Bestellung 4820 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT060N04D5 | GOFORD Semiconductor | N-CH,40V,62A,RD(max) Less Than 6.5mOhm at 10V,RD(max) Less Than 8.5mOhm at 4.5V,VTH 1.0V to 2.3V, DFN5x6-8L | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| GT060N04D5 | Goford Semiconductor | Description: N40V,120A,RD<2.8M@10V,VTH1.0V~2. Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1276 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (4.9x5.75) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 39W (Tc) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N04D52 | Goford Semiconductor | Description: MOSFET 2N-CH 40V 62A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 20V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT060N04D52 | Goford Semiconductor | Description: MOSFET 2N-CH 40V 62A 8DFN Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 20W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-DFN (4.9x5.75) Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 20V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N04K | Goford Semiconductor | Description: MOSFET, N-CH, 40V,54A,TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N04K | Goford Semiconductor | Description: MOSFET, N-CH, 40V,54A,TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V | auf Bestellung 2162 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT060N04K | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 62A; 70W; TO252 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Power dissipation: 70W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 25nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N04T | GOFORD Semiconductor | N-CH,40V,60A,RD(max) Less Than 6mOhm at 10V,RD(max) Less Than 8.5mOhm at 4.5V,VTH 1.0V to 2.3V, TO-220 | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| GT060N04T | Goford Semiconductor | Description: MOSFET, N-CH, 40V,60A,TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 20 V | auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT060N04T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 62A; 70W; TO220 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Power dissipation: 70W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 25nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT060N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 116A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5365 pF @ 50 V | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT060N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 116A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5365 pF @ 50 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT060N10T | GOFORD Semiconductor | GT060N10T | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| GT0625-180 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 18IN LG | auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT0625-240 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 24IN LG | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT0625-30 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 3IN LG | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT0625-360 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 36IN LG | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0625-50 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 5IN LG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT0625-90 | Ondrives.US Corp | Description: SHAFT, 0.0625 DIA. X 9IN LG | auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT065P06D5 | Goford Semiconductor | Description: MOSFET P-CH 60V 103A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ -20A, -10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5326 pF @ -30 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT065P06D5 | Goford Semiconductor | Description: MOSFET P-CH 60V 103A DFN5*6-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5326 pF @ 30 V | auf Bestellung 3146 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT065P06D5 | GOFORD | MOSFET P-CH 60V 103A DFN5*6-8L Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT065P06D5 | Goford Semiconductor | Description: MOSFET P-CH 60V 103A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5326 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT065P06T | Goford Semiconductor | Description: MOSFET P-CH 60V 82A TO-220 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT065P06T | GOFORD | P-CH 60 V 82A TO-220 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT065P06T | GOFORD Semiconductor | P-CH,-60V,-82A,RD(max) Less Than 7.5mOhm at -10V,RD(max) Less Than 9.5mOhm at -4.5V,VTH-1V to -2.5V ,TO-220 | auf Bestellung 16450 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| GT065P06T | Goford Semiconductor | Description: P-60V,-82A,RD(MAX)<7.5M@-10V,VTH Input Capacitance (Ciss) (Max) @ Vds: 5335 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT06PCM32-ARS-120(36OS) | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR PLUG 120 AMPS 4 AWG | Produkt ist nicht verfügbar | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-30(29R) | Amphenol Industrial Operations | Description: CONN PLUG FMALE 4P SILVER SCREW Features: Backshell Packaging: Bulk Connector Type: Plug, Female Sockets Color: Olive Drab Current Rating (Amps): 30A Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Orientation: N (Normal) Shell Size - Insert: 32 Operating Temperature: -55°C ~ 125°C Fastening Type: Reverse Bayonet Lock Termination: Screw Ingress Protection: IP67 - Dust Tight, Waterproof Contact Finish - Mating: Silver Part Status: Discontinued at Digi-Key Shell Material: Aluminum Shell Finish: Olive Drab Cadmium Primary Material: Metal | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT06PCM32-ARS-30(29R) | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR PLUG 30 AMPS 8-10 AWG | Produkt ist nicht verfügbar | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-40(29R) | Amphenol Industrial Operations | Description: CONN PLUG FMALE 4P SILVER SCREW Features: Backshell Packaging: Bulk Connector Type: Plug, Female Sockets Color: Olive Drab Current Rating (Amps): 40A Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Orientation: N (Normal) Shell Size - Insert: 32 Operating Temperature: -55°C ~ 125°C Fastening Type: Reverse Bayonet Lock Termination: Screw Ingress Protection: IP67 - Dust Tight, Waterproof Contact Finish - Mating: Silver Shell Material: Aluminum Shell Finish: Olive Drab Cadmium Primary Material: Metal | Produkt ist nicht verfügbar | Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-40(29R) | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR PLUG 40 AMPS 8-10 AWG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-50(29) | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR PLUG 50 AMPS 4-6 AWG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-50(29) | Amphenol Industrial Operations | Description: CONN PLUG FMALE 4P SILVER SCREW Features: Backshell Packaging: Bulk Connector Type: Plug, Female Sockets Color: Olive Drab Current Rating (Amps): 50A Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Orientation: N (Normal) Shell Size - Insert: 32 Operating Temperature: -55°C ~ 125°C Fastening Type: Reverse Bayonet Lock Termination: Screw Ingress Protection: IP67 - Dust Tight, Waterproof Contact Finish - Mating: Silver Shell Material: Aluminum Shell Finish: Olive Drab Cadmium Primary Material: Metal | Produkt ist nicht verfügbar | Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-70(29OS) | Amphenol Industrial Operations | Description: CONN PLUG FMALE 4P SILVER SCREW Features: Backshell Packaging: Bulk Connector Type: Plug, Female Sockets Color: Olive Drab Current Rating (Amps): 70A Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Orientation: N (Normal) Shell Size - Insert: 32 Operating Temperature: -55°C ~ 125°C Fastening Type: Reverse Bayonet Lock Termination: Screw Ingress Protection: IP67 - Dust Tight, Waterproof Contact Finish - Mating: Silver Shell Material: Aluminum Shell Finish: Olive Drab Cadmium Primary Material: Metal | Produkt ist nicht verfügbar | Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT06PCM32-ARS-70(29OS) | Amphenol Industrial | Circular MIL Spec Connector 4 CONDUCTOR PLUG 70 AMPS 4-6 AWG | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT07-110-013 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Tape & Reel (TR) Inductance: 100µH Size / Dimension: 0.390" L x 0.480" W (10.00mm x 12.20mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1 ET (Volt-Time): 13VµS Height - Seated (Max): 0.250" (6.35mm) | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT07-110-013 | ICE Components | Pulse Transformers SMT Gate Drive Trans 100uH 1:1 6250Vac | auf Bestellung 735 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT07-110-013 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Cut Tape (CT) Inductance: 100µH Size / Dimension: 0.390" L x 0.480" W (10.00mm x 12.20mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1 ET (Volt-Time): 13VµS Height - Seated (Max): 0.250" (6.35mm) | auf Bestellung 477 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT07-110-027 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Tape & Reel (TR) Inductance: 340µH Size / Dimension: 0.390" L x 0.480" W (10.00mm x 12.20mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1.1 ET (Volt-Time): 27VµS Height - Seated (Max): 0.250" (6.35mm) | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT07-110-027 | ICE Components | Pulse Transformers SMT Gate Drive Trans 340uH 1:1.1 6250Vac | auf Bestellung 1121 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT07-110-027 | ICE Components, Inc. | Description: SMT GATE DRIVE TRANSFORMER Packaging: Cut Tape (CT) Inductance: 340µH Size / Dimension: 0.390" L x 0.480" W (10.00mm x 12.20mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Transformer Type: Gate Drive Turns Ratio - Primary:Secondary: 1:1.1 ET (Volt-Time): 27VµS Height - Seated (Max): 0.250" (6.35mm) | auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT070N15M | Goford Semiconductor | Description: MOSFET N-CH 150V 140A 320W TO-26 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 75 V | auf Bestellung 795 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT070N15M | Goford Semiconductor | Description: MOSFET N-CH 150V 140A 320W TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 75 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT070N15M | Goford Semiconductor | Description: MOSFET N-CH 150V 140A 320W 5.8m( Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 75 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT070N15T | Goford Semiconductor | Description: MOSFET N-CH 150V140A 320W TO-22 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5864 pF @ 75 V | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT070N15TL | Goford Semiconductor | Description: MOSFET N-CH 150V,200A,430W TOLL- Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V Power Dissipation (Max): 430W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5865 pF @ 75 V | auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT070N15TL | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 150V; 200A; 430W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 200A Power dissipation: 430W Case: TOLL Gate-source voltage: ±20V Mounting: SMD Gate charge: 89nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT070N15TL | Goford Semiconductor | Description: MOSFET N-CH 150V,200A,430W TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V Power Dissipation (Max): 430W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5865 pF @ 75 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT070N15TL | Goford Semiconductor | Description: MOSFET,N-CH,150V,200A,430W,TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 430W Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT0781-50 | Ondrives.US Corp | Description: SHAFT, 0.0781 DIA. X 5IN LG | auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT0800PA01120HR | Amphenol Commercial Products | Power to the Board Topflight power 12P12S cable side power TPA | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N08D5 | Goford Semiconductor | Description: N85V,65A,RD<8.5M@10V,VTH2.0V~4.0 Part Status: Active Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 85 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-DFN (4.9x5.75) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10K | Goford Semiconductor | Description: N100V, 75A,RD<8M@10V,VTH1V~3V, T Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 50 V | auf Bestellung 1227 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT080N10K | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 70A; 100W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 50nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10K | Goford Semiconductor | Description: N100V, 75A,RD<8M@10V,VTH1V~3V, T Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10KI | Goford Semiconductor | Description: N100V,65A,RD<8M@10V,VTH1.0V~2.5V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2394 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10M | Goford Semiconductor | Description: N100V, 70A,RD<7.5M@10V,VTH1V~3V, Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2915 pF @ 50 V | auf Bestellung 218 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT080N10M | GOFORD SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 70A; 100W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Gate charge: 50nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10M | Goford Semiconductor | Description: N100V, 70A,RD<7.5M@10V,VTH1V~3V, Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2915 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10M | Goford Semiconductor | Description: MOSFET N-CH 100V 70A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT080N10T | Goford Semiconductor | Description: MOSFET N-CH 100V 70A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT080N10T | Goford Semiconductor | Description: N100V, 70A,RD<8M@10V,VTH1.0V~3.0 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 50 V | auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT080N10T | GOFORD SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 70A; 100W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Power dissipation: 100W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 50nC Kind of channel: enhancement Technology: SGT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT080N10TI | Goford Semiconductor | Description: N100V,65A,RD<8M@10V,VTH1.0V~2.5V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2328 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT085N10D5 | Goford Semiconductor | Description: MOSFET,N-CH,100V,71A,100W,DFN5*6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 4.5V Power Dissipation (Max): 100W Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 10 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT085N10D5 | Goford Semiconductor | Description: MOSFET N-CH 100V 71A 100W DFN5*6 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT085N10D5 | Goford Semiconductor | Description: MOSFET N-CH 100V 71A 100W DFN5*6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT08885 | PRO ELEC | Description: PRO ELEC - GT08885 - Heizgerät rohrförmig 1ft, 45W tariffCode: 85162999 euEccn: NLR rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: TBA Nennleistung: 45W isCanonical: Y Netzsteckertyp: Netzstecker separat erhältlich Außentiefe: - Außenbreite: 1ft SVHC: To Be Advised Außenhöhe: - Betriebsspannung: 240V productTraceability: No usEccn: EAR99 | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT08886 | PRO ELEC | Description: PRO ELEC - GT08886 - Heizgerät rohrförmig 2ft, 80W tariffCode: 85162999 productTraceability: No rohsCompliant: YES Nennleistung: 80W euEccn: NLR Netzsteckertyp: Netzstecker separat erhältlich hazardous: false Betriebsspannung: 240V rohsPhthalatesCompliant: TBA Außentiefe: - Außenhöhe: - usEccn: EAR99 Außenbreite: 2ft SVHC: No SVHC (16-Jan-2020) | auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| GT08887/GT08609 | PRO ELEC | Description: PRO ELEC - GT08887/GT08609 - Heizgerät rohrförmig 3ft, 135W tariffCode: 85162999 productTraceability: No rohsCompliant: YES Nennleistung: 135W euEccn: NLR Netzsteckertyp: Netzstecker separat erhältlich hazardous: false Betriebsspannung: 240V rohsPhthalatesCompliant: TBA Außentiefe: - Außenhöhe: - usEccn: EAR99 Außenbreite: 3ft SVHC: No SVHC (16-Jan-2020) | auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| GT08892 | PRO ELEC | Description: PRO ELEC - GT08892 - Schutz für Heizung 2ft tariffCode: 85162999 productTraceability: No SVHC: To Be Advised rohsCompliant: YES HLK-Typ: - euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT088N06T | Goford Semiconductor | Description: N60V,RD(MAX)<9M@10V,RD(MAX)<13M@ Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1116 pF @ 30 V | auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT088N06T | Goford Semiconductor | Description: MOSFET N-CH 60V 60A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT090N06D52 | Goford Semiconductor | Description: MOSFET 2N-CH 60V 40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 62W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 30V Rds On (Max) @ Id, Vgs: 14mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT090N06D52 | GOFORD Semiconductor | Dual N-Channel Enhancement Mode Power MOSFET | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| GT090N06D5H | Goford Semiconductor | Description: MOSFET N-CH 60V 45A 69W DFN5*6-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 15A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT090N06D5H | Goford Semiconductor | Description: MOSFET N-CH 60V 45A 69W DFN5*6-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 15A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT090N06K | Goford Semiconductor | Description: MOSFET N-CH 60V 45A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT090N06K | Goford Semiconductor | Description: MOSFET, N-CH, 60V,45A,TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V | auf Bestellung 1573 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT090N06K | Goford Semiconductor | Description: MOSFET, N-CH, 60V,45A,TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT090N06MH | Goford Semiconductor | Description: MOSFET N-CH 60V 45A 52W 11m(max Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT090N06S | Goford Semiconductor | Description: N60V,14A,RD<8M@10V,VTH1.0V~2.4V, Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1378 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT095N04D3 | Goford Semiconductor | Description: MOSFET N-CH 40V 47A DFN3*3-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT095N04D3 | Goford Semiconductor | Description: MOSFET N-CH 40V 47A DFN3*3-8L Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (3.15x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 22.7W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 4039 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT095N04D3 | Goford Semiconductor | Description: MOSFET N-CH 40V 47A DFN3*3-8L Supplier Device Package: 8-DFN (3.15x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 22.7W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GT095N04D5 | Goford Semiconductor | Description: MOSFET N-CH 40V 54A DFN5*6-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| GT095N04D5 | Goford Semiconductor | Description: MOSFET N-CH 40V 54A DFN5*6-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|