Produkte > NSB
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NSBA143EDXV6T1 | ONSEMI | Description: ONSEMI - NSBA143EDXV6T1 - EACH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 44000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143EDXV6T1G | onsemi | Digital Transistors 100mA 50V Dual PNP | auf Bestellung 7768 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143EDXV6T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143EDXV6T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-563 | auf Bestellung 45500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143EDXV6T1G | ONSEMI | Description: ONSEMI - NSBA143EDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 45500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143EDXV6T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143EF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 | auf Bestellung 152000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143EF3T5G | ONSEMI | Description: ONSEMI - NSBA143EF3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 304000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143EF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Bulk Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 | auf Bestellung 456000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143EF3T5G | onsemi | Digital Transistors SOT-1123 PBRT TRANSISTOR | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143EMXWTBG | onsemi | Description: BIAS RESISTOR TRANSISTORS (BRT) Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 | auf Bestellung 87000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143EMXWTBG | onsemi | Digital Transistors PBRT, 50V, XDFNW3 | auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143TDXV6T1 | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBA143TDXV6T1 | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143TDXV6T1 | ONSEMI | Description: ONSEMI - NSBA143TDXV6T1 - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143TDXV6T1 | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143TDXV6T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143TDXV6T1G | ONSEMI | Description: ONSEMI - NSBA143TDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143TDXV6T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 | auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143TDXV6T1G | onsemi | Digital Transistors 100mA 50V Dual PNP | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143TDXV6T5 | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 | auf Bestellung 56000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143TDXV6T5 | ONSEMI | Description: ONSEMI - NSBA143TDXV6T5 - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 56000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143TDXV6T5G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 | auf Bestellung 104000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143TDXV6T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143TDXV6T5G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143TF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistors Included: R1 Only | auf Bestellung 144000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143TF3T5G | onsemi | Digital Transistors PNP DIGITAL TRANSISTOR (BRT) | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143TF3T5G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 297mW 3-Pin SOT-1123 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143TF3T5G | ONSEMI | Description: ONSEMI - NSBA143TF3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 364271 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143TF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistors Included: R1 Only | auf Bestellung 150580 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143ZDP6T5G | ONSEMI | Description: ONSEMI - NSBA143ZDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 160000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143ZDP6T5G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143ZDP6T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased DUAL PBRT | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143ZDP6T5G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-963 Packaging: Bulk Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 | auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143ZDXV6 | Rochester Electronics, LLC | Description: DUAL PNP BIPOLAR DIGITAL TRANSIS | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143ZDXV6T1 | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143ZDXV6T1 | ONSEMI | Description: ONSEMI - NSBA143ZDXV6T1 - EACH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 43990 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143ZDXV6T1 | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 43990 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143ZDXV6T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143ZDXV6T1G | ONSEMI | Description: ONSEMI - NSBA143ZDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 162500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143ZDXV6T1G | onsemi | Digital Transistors Dual PNP Bipolar Digital Transistor (BRT) | auf Bestellung 3841 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143ZDXV6T1G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 162500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143ZDXV6T5G | onsemi | Description: TRANS 2PNP PREBIAS 0.5W SOT563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143ZF3 | onsemi | onsemi SOT-1123 PBRT TRANSISTOR | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA143ZF3T5G | onsemi | Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR | auf Bestellung 7876 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143ZF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Bulk Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 | auf Bestellung 624000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA143ZF3T5G | ONSEMI | Description: ONSEMI - NSBA143ZF3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 624000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA143ZF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144EDP6T5G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 408mW 6-Pin SOT-963 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144EDP6T5G | onsemi | Digital Transistors SOT-963 DUAL PBRT | auf Bestellung 9714 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144EDP6T5G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 Part Status: Active | auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144EDP6T5G | ONSEMI | Description: ONSEMI - NSBA144EDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 449603 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA144EDP6T5G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 Part Status: Active | auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144EDXV6T1 | ONSEMI | Description: ONSEMI - NSBA144EDXV6T1 - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA144EDXV6T1 | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased Power - Max: 357mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 32000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144EDXV6T1 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBA144EDXV6T1G | ONSEMI | Description: ONSEMI - NSBA144EDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA144EDXV6T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144EDXV6T1G | onsemi | Digital Transistors 100mA 50V Dual PNP | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144EDXV6T5 | ONSEMI | Description: ONSEMI - NSBA144EDXV6T5 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144EDXV6T5 | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144EDXV6T5G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 357mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhm Resistor - Emitter Base (R2): 47kOhm Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144EDXV6T5G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144EDXV6T5G | onsemi | Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR | auf Bestellung 6964 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144EDXV6T5G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 357mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhm Resistor - Emitter Base (R2): 47kOhm Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144EF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144EF3T5G | ONSEMI | Description: ONSEMI - NSBA144EF3T5G - DIGITAL TRANSISTOR, 50V, 0.1A tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 867833 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA144EF3T5G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-1123 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 16000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144EF3T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR | auf Bestellung 7950 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144EMXWTBG | onsemi | Description: BIAS RESISTOR TRANSISTORS (BRT) Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 | auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144EMXWTBG | onsemi | Digital Transistors PBRT, 50V, XDFNW3 | auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144TF3T5G | onsemi | Digital Transistors PNP Bipolar Digital Transistor (BRT) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144TF3T5G | ONSEMI | Description: ONSEMI - NSBA144TF3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 312000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA144TF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Bulk Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 47 kOhms Resistors Included: R1 Only | auf Bestellung 312000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144TF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 47 kOhms Resistors Included: R1 Only | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144WDP6T5G | ONSEMI | Description: ONSEMI - NSBA144WDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA144WDP6T5G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-963 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144WDP6T5G | onsemi | Description: TRANS PREBIAS 2PNP 50V SOT-963 Packaging: Bulk Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-963 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144WDP6T5G | onsemi | Bipolar Transistors - Pre-Biased DUAL PBRT | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144WDXV6T1G | onsemi | Description: TRANS 2PNP PREBIAS 0.5W SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144WDXV6T1G | onsemi | Digital Transistors SOT-563 DUAL 47/22 K OHM | auf Bestellung 3679 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144WDXV6T1G | ON Semiconductor | Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144WDXV6T1G | onsemi | Description: TRANS 2PNP PREBIAS 0.5W SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144WF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Bulk Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 | auf Bestellung 288000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBA144WF3T5G | onsemi | Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBA144WF3T5G | ONSEMI | Description: ONSEMI - NSBA144WF3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 296000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBA144WF3T5G | onsemi | Digital Transistors SOT-1123 PBRT TRANSISTOR | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC113EDXV6T1 | ONSEMI | Description: ONSEMI - NSBC113EDXV6T1 - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| NSBC113EDXV6T1 | onsemi | Description: TRANS 2NPN PREBIAS 0.5W SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 1kOhms Resistor - Base (R1): 1kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC113EDXV6T1 | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC113EDXV6T1 | onsemi | Description: TRANS 2NPN PREBIAS 0.5W SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 1kOhms Resistor - Base (R1): 1kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Bulk | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBC113EDXV6T1G | ON Semiconductor | Description: TRANS 2NPN PREBIAS 0.5W SOT563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC113EDXV6T1G | onsemi | Digital Transistors 50V Dual NPN Bipolar Digital Transistor | auf Bestellung 2838 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBC113EDXV6T1G | ON Semiconductor | Description: TRANS 2NPN PREBIAS 0.5W SOT563 | auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC113EDXV6T5 | onsemi | Description: TRANS 2NPN PREBIAS 0.5W SOT563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC113EF3T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC113EF3T5G | ON Semiconductor | Description: TRANS PREBIAS DUAL NPN | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC113EPDXV6T1 | ON Semiconductor | Description: TRANS PREBIAS NPN/PNP SOT563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC113EPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhm Resistor - Emitter Base (R2): 1kOhm Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| NSBC113EPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhm Resistor - Emitter Base (R2): 1kOhm Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
|
