Produkte > DMP
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMP2036UVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V TSOT26 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2036UVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 6A TSOT26 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2036UVTQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2036UVTQ-13 | Diodes Zetex | MOSFET BVDSS: 8V24V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2036UVTQ-7 | Diodes Zetex | MOSFET BVDSS: 8V24V TSOT26 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2036UVTQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V TSOT26 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2037U-13 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2037U-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2037U-13 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2037U-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2037U-13 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2037U-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 3K | auf Bestellung 2605 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2037U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -38A Drain-source voltage: -20V Drain current: -4.8A Gate charge: 14.5nC On-state resistance: 43mΩ Power dissipation: 1.6W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2037U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2037U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2037UFCL-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V U-DFN1616-6 Packaging: Bulk Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN1616-6 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2037UFCL-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V U-DFN1616-6 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2037UFCL-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2038USS-13 | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 1496pF 14.4nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2038USS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1496 pF @ 15 V | auf Bestellung 7954 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2038USS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1496 pF @ 15 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2039UFDE-7 | DIODES INC. | Description: DIODES INC. - DMP2039UFDE-7 - Leistungs-MOSFET, p-Kanal, 25 V, 6.7 A, 0.02 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 6.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2039UFDE-7 | Diodes Zetex | Trans MOSFET P-CH 25V 6.7A 6-Pin DFN EP T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2039UFDE-7 | DIODES INC. | Description: DIODES INC. - DMP2039UFDE-7 - Leistungs-MOSFET, p-Kanal, 25 V, 6.7 A, 0.02 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 6.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2039UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 6.7A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 8 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 62995 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2039UFDE-7 | Diodes Zetex | Trans MOSFET P-CH 25V 6.7A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2039UFDE-7 | Diodes Zetex | Trans MOSFET P-CH 25V 6.7A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2039UFDE-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30 U-DFN2020-6 T&R 3K | auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2039UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 6.7A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 8 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2039UFDE4 | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2039UFDE4-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30 X2-DFN2020-6 T&R 3K | auf Bestellung 2968 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2039UFDE4-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 7.3A 6DFN Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 28.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: X2-DFN2020-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 690mW (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerXDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2039UFDE4-7 | DIODES INC. | Description: DIODES INC. - DMP2039UFDE4-7 - Leistungs-MOSFET, p-Kanal, 25 V, 7.3 A, 0.019 ohm, X2-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 7.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 690mW Bauform - Transistor: X2-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2540 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2039UFDE4-7 Produktcode: 200462
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Lieblingsprodukt
| Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DMP2039UFDE4-7 | Diodes Zetex | Trans MOSFET P-CH 25V 7.3A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2039UFDE4-7 | DIODES INC. | Description: DIODES INC. - DMP2039UFDE4-7 - Leistungs-MOSFET, p-Kanal, 25 V, 7.3 A, 0.019 ohm, X2-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 7.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 690mW Bauform - Transistor: X2-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.019ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2540 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2039UFDE4-7 | Diodes Incorporated | Description: MOSFET P-CH 25V 7.3A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-PowerXDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2020-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 28.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V | auf Bestellung 2935 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2039UFDE4-7 | Diodes Zetex | Trans MOSFET P-CH 25V 7.3A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040UFDF-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040UFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K | auf Bestellung 3426 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2040UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 13A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040UFDF-7 | DIODES INC. | Description: DIODES INC. - DMP2040UFDF-7 - Leistungs-MOSFET, p-Kanal, 20 V, 13 A, 0.022 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.8W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 99 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040UFDF-7 | DIODES INC. | Description: DIODES INC. - DMP2040UFDF-7 - Leistungs-MOSFET, p-Kanal, 20 V, 13 A, 0.022 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.8W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040UFDF-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 13A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) | auf Bestellung 1216 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2040UND-7 | DIODES INC. | Description: DIODES INC. - DMP2040UND-7 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 13.6 A, 13.6 A tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 13.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 13.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.036ohm Verlustleistung, p-Kanal: 1.4W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.4W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1989 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2040UND-7 | DIODES INC. | Description: DIODES INC. - DMP2040UND-7 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 13.6 A, 13.6 A tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 13.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 13.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.036ohm Verlustleistung, p-Kanal: 1.4W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.4W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1989 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2040USD-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 6.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO | auf Bestellung 257 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2040USD-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 6.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040USD-13 | Diodes Zetex | Trans MOSFET P-CH 20V 6.5A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040USD-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -20V Drain current: -5A Gate charge: 19nC On-state resistance: 52mΩ Power dissipation: 1.6W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape | auf Bestellung 2485 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2040USD-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K | auf Bestellung 4085 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2040USS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 7A 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2040USS-13 | Diodes | MOSFET P-CH 20V 7A/15A SO-8 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040USS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 7A/15A 8SO T&R 2 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V | auf Bestellung 4029 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2040USS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 7A 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2040USS-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -30A; 1.9W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -20V Drain current: -5.5A Gate charge: 19nC On-state resistance: 52mΩ Power dissipation: 1.9W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape | auf Bestellung 2368 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2040USS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V SO-8 T&R 2.5K | auf Bestellung 7246 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2040USS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 7A/15A 8SO T&R 2 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2040USS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 7A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040USS-13 | Diodes Zetex | Trans MOSFET P-CH 20V 7A 8-Pin SO T/R | auf Bestellung 660000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2040UVT-13 | Diodes Zetex | Trans MOSFET P-CH 20V 5.5A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040UVT-13 | Diodes Incorporated | Description: MOSFET P-CH 20V TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040UVT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040UVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V | auf Bestellung 918000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2040UVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 3205 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2040UVT-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -40A; 1.5W; TSOT26 Mounting: SMD Case: TSOT26 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -40A Drain-source voltage: -20V Drain current: -4.5A Gate charge: 19nC On-state resistance: 52mΩ Power dissipation: 1.5W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2040UVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V | auf Bestellung 919995 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2040UVTQ-13 | Diodes Zetex | MOSFET BVDSS: 8V24V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2042UCB4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 1719 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2042UCB4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Pulsed drain current: -16A Power dissipation: 1.4W Case: U-WLB1010-4 Gate-source voltage: ±6V On-state resistance: 65mΩ Mounting: SMD Gate charge: 2.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2042UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2042UCP4-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X1-DSN1010- Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: X1-DSN1010-4 (Type C) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Packaging: Tape & Reel (TR) | auf Bestellung 189000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2042UCP4-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X1-DSN1010-4 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2042UCP4-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X1-DSN1010- Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: X1-DSN1010-4 (Type C) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Packaging: Cut Tape (CT) | auf Bestellung 189458 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2043UCA3-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 6018 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2043UCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A X2DSN1010-3 Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: X2-DSN1010-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2043UCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A X2DSN1010-3 Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: X2-DSN1010-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V | auf Bestellung 93268 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045U-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3.5A Gate charge: 6.8nC On-state resistance: 90mΩ Power dissipation: 1.2W Gate-source voltage: ±8V Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045U-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045U-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045U-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045U-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 19269 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045U-7 | DIODES INC. | Description: DIODES INC. - DMP2045U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.3 A, 0.032 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 800 Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.032 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 116893 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V | auf Bestellung 124563 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045U-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V | auf Bestellung 77160 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD | auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045U-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V | auf Bestellung 123000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045U-7 | DIODES INC. | Description: DIODES INC. - DMP2045U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.3 A, 0.045 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 99855 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045U-7 | Diodes | Транзистор: P-MOSFET, полевой, 24В, 4,3А, SOT23 Транзистори | auf Bestellung 491 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045UFDB-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045UFDB-7 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.1A 6UDFN Part Status: Active Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 740mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045UFDB-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K | auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045UFY4-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.7A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.7A X2-DFN2015 Mounting Type: Surface Mount Package / Case: 3-XDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: X2-DFN2015-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 670mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | auf Bestellung 1206000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045UFY4-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.7A 3-Pin X2-DFN T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UFY4-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V X2-DFN2015-3 T&R 3K | auf Bestellung 27927 Stücke: Lieferzeit 10-14 Tag (e) |
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