Produkte > AOT

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11  [ Nächste Seite >> ]
BezeichnungHerstellerBeschreibungVerfügbarkeitPrivatkunde
AOTF10B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 20A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Supplier Device Package: TO-220F
Td (on/off) @ 25°C: 10ns/72ns
Switching Energy: 260µJ (on), 70µJ (off)
Test Condition: 400V, 10A, 30Ohm, 15V
Gate Charge: 17.4 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 42 W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B60DALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eoff: 0.16mJ; Eon: 0.35mJ
Mounting: THT
Type of transistor: IGBT
Case: TO220F
Kind of package: tube
Gate charge: 17.4nC
Turn-on time: 25ns
Turn-off time: 80.8ns
Turn-off switching energy: 0.16mJ
Turn-on switching energy: 0.35mJ
Collector-emitter saturation voltage: 1.53V
Collector current: 10A
Power dissipation: 16.7W
Pulsed collector current: 40A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.26 EUR
43+2.02 EUR
48+1.78 EUR
100+1.62 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B60DAOSIGBT 600V 20A 42W TO220F Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B60D2Alpha & Omega Semiconductor Inc.Description: IGBT 600V 23A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-220F
Td (on/off) @ 25°C: 12ns/83ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 31.2 W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B60D2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 12W
Case: TO220F
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 9.4nC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 124ns
Collector-emitter saturation voltage: 1.55V
Turn-off switching energy: 0.04mJ
Turn-on switching energy: 0.14mJ
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.7 EUR
56+1.54 EUR
63+1.36 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B60D2AOSIGBT 600V 10A TO-220F Транзистори
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B65M1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 10A TO220
Packaging: Tube
Power - Max: 30 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 24 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 180µJ (on), 130µJ (off)
Td (on/off) @ 25°C: 12ns/91ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Reverse Recovery Time (trr): 263 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.37 EUR
50+1.78 EUR
100+1.62 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B65M1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 12W; TO220F; Eoff: 0.13mJ; Eon: 0.18mJ
Mounting: THT
Type of transistor: IGBT
Case: TO220F
Kind of package: tube
Gate charge: 24nC
Turn-on time: 28ns
Turn-off time: 131ns
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
Collector-emitter saturation voltage: 1.6V
Collector current: 10A
Power dissipation: 12W
Pulsed collector current: 30A
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B65M1AOSTrans IGBT Chip N-CH 650V 20A 30000mW TO-220F Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B65M1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 20A 30W 3-Pin(3+Tab) TO-220F Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B65M2Alpha & Omega Semiconductor Inc.Description: IGBT 650V 10A TO220
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 30 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 24 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 180µJ (on), 130µJ (off)
Td (on/off) @ 25°C: 12ns/91ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Reverse Recovery Time (trr): 262 ns
Input Type: Standard
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.06 EUR
10+2.76 EUR
100+1.96 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10B65M2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 12W; TO220F; Eoff: 0.13mJ; Eon: 0.18mJ
Mounting: THT
Type of transistor: IGBT
Case: TO220F
Kind of package: tube
Gate charge: 24nC
Turn-on time: 28ns
Turn-off time: 131ns
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
Collector-emitter saturation voltage: 1.6V
Collector current: 10A
Power dissipation: 12W
Pulsed collector current: 30A
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N50FDAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 10A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N50FD_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 10A TO220-3F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60ALPHA&OMEGATransistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 50W; -55°C ~ 150°C; AOTF10N60 TAOTF10n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.51 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220F
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 31.1nC
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.94 EUR
50+1.71 EUR
56+1.54 EUR
100+1.38 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60
Produktcode: 119569
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60ALPHA&OMEGATransistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 50W; -55°C ~ 150°C; AOTF10N60 TAOTF10n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.51 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60CLAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60CL_0C1Alpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 745 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60L_002Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO220-3F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60_002Alpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60_003Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO220-3F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N60_006Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO220-3F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N62Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO-220F
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N65ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.7nC
auf Bestellung 412 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.74 EUR
56+1.54 EUR
63+1.36 EUR
100+1.24 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N65
Produktcode: 165192
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 10A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10N90Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 900V 10A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10T60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10T60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO220-3F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10T60PALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.6A; TO220F
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220F
On-state resistance: 0.7Ω
Mounting: THT
Gate charge: 26nC
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.33 EUR
Mindestbestellmenge: 64 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10T60PLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF10T60_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V TO-220F
Supplier Device Package: TO-220F
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11C60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11C60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11C60PLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11C60PLAOSMOSFET N-CH 600V 11A TO-220F Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11C60P_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11C60_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11N60Alpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1656 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11N60LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 37.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 37.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 37nC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11N60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11N62Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 620V 11A TO220-3F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11N62LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 620V 11A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11N70Alpha & Omega SemiconductorTrans MOSFET N-CH 700V 11A 3-Pin(3+Tab) TO-220F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11N70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 11A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11N70ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.87Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 37.5nC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11N70_001Alpha & Omega Semiconductor Inc.Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220F
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
110+1.58 EUR
Mindestbestellmenge: 110 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
110+1.58 EUR
Mindestbestellmenge: 110 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11S60_900Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO220
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11S65LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 11A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.76 EUR
50+2.88 EUR
100+2.59 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF11S65LAlpha & Omega SemiconductorTrans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220F T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF125A60FDLAlpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF125A60FDLAlpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF125A60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 28A TO220F
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N30Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 300V 11.5A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 12A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N50Alpha & Omega Semiconductor
auf Bestellung 995 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N50LAlpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N50_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N50_007Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F T/R
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
52+3.38 EUR
Mindestbestellmenge: 52 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F T/R
auf Bestellung 944 Stücke:
Lieferzeit 14-21 Tag (e)
135+1.3 EUR
Mindestbestellmenge: 135 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.53 EUR
42+2.06 EUR
47+1.82 EUR
53+1.63 EUR
55+1.55 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60ALPHA&OMEGATransistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60 TAOTF12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.49 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60
Produktcode: 129208
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60FDALPHA&OMEGATransistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.49 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60FDAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60FD_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V TO220F
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.07 EUR
50+2.49 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N60_001Alpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220F
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)
114+1.65 EUR
1000+1.34 EUR
Mindestbestellmenge: 114 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220F
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N65ALPHA&OMEGATransistor N-Channel MOSFET; 650V; 30V; 720mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N65 TAOTF12n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+4.53 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 12A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220F
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
114+1.55 EUR
Mindestbestellmenge: 114 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12N65AAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 12A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12T50PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 12A TO-220F
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12T50PLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12T60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12T60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF12T60PLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF13N50ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.5A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 510mΩ
Mounting: THT
Gate charge: 30.7nC
Kind of channel: enhancement
auf Bestellung 543 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.81 EUR
53+1.62 EUR
60+1.43 EUR
100+1.3 EUR
500+1.21 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF13N50
Produktcode: 180939
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF13N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220F
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF13N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 13A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 6.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF13N50LAlpha & Omega Semiconductor Inc.Description: MOSFET
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Part Status: Last Time Buy
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF13N50_002Alpha & Omega Semiconductor Inc.Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 510mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Part Status: Last Time Buy
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF14N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220F Tube
auf Bestellung 879 Stücke:
Lieferzeit 14-21 Tag (e)
879+1.75 EUR
Mindestbestellmenge: 879 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF14N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 14A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11  [ Nächste Seite >> ]