Produkte > NSV
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| NSVBC858CLT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz | auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVBC858CLT1G | onsemi | Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBC858CLT1G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR PNP 30V | auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBC858CLT1G | ONN | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVBC858CLT1G | onsemi | Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW | auf Bestellung 895 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCH807-25LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Qualification: AEC-Q101 | auf Bestellung 5476 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCH807-25LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCH807-25LT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCH807-25LT1G | onsemi | Bipolar Transistors - BJT +175C TJ(MAX) PNP Bipolar Transistor AEC-Q101.revD Qualified, +175C TJ(MAX) | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCH807-40LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCH807-40LT1G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR SPCL TR _175DEGC | auf Bestellung 15573 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCH807-40LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCH817-40LT1G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR SPCL TR _175DEGC | auf Bestellung 7899 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCH817-40LT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCH817-40LT1G | onsemi | Description: TRANS NPN 45V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 1958 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCH817-40LT1G | onsemi | Description: TRANS NPN 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP53-16T3G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP53-16T3G | onsemi | Description: TRANS PNP 80V 1.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP53-16T3G | ON Semiconductor | auf Bestellung 2740 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVBCP53-16T3G | onsemi | Description: TRANS PNP 80V 1.5A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP53-16T3G | onsemi | Bipolar Transistors - BJT SS SOT223 GP XSTR PNP 80V | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCP5310MTWG | onsemi | Description: TRANS PNP 80V 1A 3WDFNW Packaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP5310MTWG | onsemi | Bipolar Transistors - BJT 80V 1A PNP WDFNW3 2X2 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCP5310MTWG | onsemi | Description: TRANS PNP 80V 1A 3WDFNW Packaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP5316MTWG | onsemi | Description: TRANS PNP 80V 1A 3WDFNW Packaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP5316MTWG | onsemi | Bipolar Transistors - BJT 80V 1A PNP WDFNW3 2X2 | auf Bestellung 27000 Stücke: Lieferzeit 199-203 Tag (e) |
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| NSVBCP53MTWG | onsemi | Description: TRANS PNP 80V 1A 3WDFNW Packaging: Tape & Reel (TR) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP53MTWG | onsemi | Bipolar Transistors - BJT 80V, 1A, PNP, WDFNW3 2X2 | auf Bestellung 10367 Stücke: Lieferzeit 213-217 Tag (e) |
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| NSVBCP53MTWG | onsemi | Description: TRANS PNP 80V 1A 3WDFNW Packaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP56-10T3G | onsemi | Bipolar Transistors - BJT SS SOT223 GP XSTR NPN 80V | auf Bestellung 19999 Stücke: Lieferzeit 374-378 Tag (e) |
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| NSVBCP56-10T3G | onsemi | Description: TRANS NPN 80V 1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP56-10T3G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 130MHz | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP56-10T3G | onsemi | Description: TRANS NPN 80V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP5610MTWG | onsemi | Description: TRANS NPN 80V 1A 3WDFNW Packaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 140MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Qualification: AEC-Q101 | auf Bestellung 692 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCP5610MTWG | onsemi | Bipolar Transistors - BJT 80V1A NPNWDFNW3 2X2 | auf Bestellung 1841 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCP5616MTWG | onsemi | Description: TRANS NPN 80V 1A 3WDFNW Packaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 140MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP56MTWG | onsemi | Description: TRANS NPN 80V 1A 3WDFNW Packaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 140MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP56MTWG | onsemi | Bipolar Transistors - BJT 80V,1A, NPN,WDFNW3 2X2 | auf Bestellung 27000 Stücke: Lieferzeit 241-245 Tag (e) |
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| NSVBCP56MTWG | onsemi | Description: TRANS NPN 80V 1A 3WDFNW Packaging: Tape & Reel (TR) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 140MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP68T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP68T1G | onsemi | Description: TRANS NPN 20V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP68T1G | onsemi | Description: TRANS NPN 20V 1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP68T1G | onsemi | Bipolar Transistors - BJT LOW VOLTAGE-HIGH CURRENT | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCP69T1G | onsemi | Bipolar Transistors - BJT LOW VOLTAGE-HIGH CURRENT | auf Bestellung 904 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCP69T1G | onsemi | Description: TRANS PNP 20V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W | auf Bestellung 691 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCP69T1G | ON Semiconductor | auf Bestellung 12800 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVBCP69T1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCP69T1G | onsemi | Description: TRANS PNP 20V 1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCW32LT1G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 32V | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCW32LT1G | onsemi | Description: TRANS NPN 32V 0.1A SOT23-3 Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCW32LT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Collector-emitter voltage: 32V Application: automotive industry Current gain: 200...450 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCW68GLT1G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 29664 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCW68GLT1G | onsemi | Bipolar Transistors - BJT SS SOT23 GP XSTR PNP | auf Bestellung 30608 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCW68GLT1G | onsemi | Description: TRANS PNP 45V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCW68GLT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 120...400 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCX17LT1G | onsemi | Digital Transistors SS SOT23 GP XSTR PNP 45V | auf Bestellung 1376 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCX17LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCX17LT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBCX17LT1G | onsemi | Description: TRANS PNP 45V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBSP19AT1G | onsemi | Description: TRANS NPN 350V 0.1A SOT223 Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: SOT-223 (TO-261) Frequency - Transition: 70MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBSS63LT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB Mounting: SMD Frequency: 50MHz Application: automotive industry Polarisation: bipolar Type of transistor: PNP Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.225W Current gain: 30 Collector-emitter voltage: 100V Kind of package: reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBSS63LT1G | onsemi | Description: TRANS PNP 100V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 95MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 225 mW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBSS63LT1G | onsemi | Description: TRANS PNP 100V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 95MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 225 mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBSS63LT1G | onsemi | Bipolar Transistors - BJT SS SOT23 DR XSTR PNP 100V | auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBT2222ADW1T1G | onsemi | Bipolar Transistors - BJT SS SC88 GP XSTR NPN 40V | auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBT2222ADW1T1G | onsemi | Description: TRANS 2NPN 40V 600MA SC88/SC70 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 5264 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBT2222ADW1T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVBT2222ADW1T1G | onsemi | Description: TRANS 2NPN 40V 600MA SC88/SC70 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVC2020JBT3G | onsemi | LED Lighting Driver ICs SMB 20 MA 15% CCR | auf Bestellung 344 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVC2020JBT3G | onsemi | Description: IC CURRENT REGULATOR 15% SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 120V Current - Output: 20mA Accuracy: ±15% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMB Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVC2020JBT3G | onsemi | Description: IC CURRENT REGULATOR 15% SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 120V Current - Output: 20mA Accuracy: ±15% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMB Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 8547 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVC2030JBT3G | onsemi | LED Lighting Driver ICs SMB 30 MA 15% CCR | auf Bestellung 38853 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVC2030JBT3G | onsemi | Description: IC CURRENT REGULATOR 15% SMB Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SMB Operating Temperature: -55°C ~ 175°C Accuracy: ±15% Current - Output: 30mA Voltage - Input: 120V Function: Current Regulator Mounting Type: Surface Mount Sensing Method: High/Low-Side Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) | auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVC2030JBT3G | ON Semiconductor | LED Lighting Drivers SMB 30 MA 15% CCR | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVC2030JBT3G | ONSEMI | Description: ONSEMI - NSVC2030JBT3G - LED-Treiber, AC/DC, 30mA, -55 bis 175°C, 1 Ausgang, 120V, AEC-Q101, DO-214AA (SMB)-2 Schaltfrequenz: - MSL: MSL 1 - unbegrenzt Betriebstemperatur, min.: -55 Eingangsspannung, max.: 120 Bauform - Treiber: DO-214AA (SMB) Bausteintopologie: Konstantstrom, linear Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Eingangsspannung, min.: - Anzahl der Pins: 2 Produktpalette: - Betriebstemperatur, max.: 175 Anzahl der Ausgänge: 1 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVC2030JBT3G | onsemi | Description: IC CURRENT REGULATOR 15% SMB Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SMB Operating Temperature: -55°C ~ 175°C Accuracy: ±15% Current - Output: 30mA Voltage - Input: 120V Function: Current Regulator Mounting Type: Surface Mount Sensing Method: High/Low-Side Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) | auf Bestellung 23661 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVC2050JBT3G | onsemi | Description: IC CURRENT REGULATOR 15% SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 120V Current - Output: 50mA Accuracy: ±15% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMB Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 39764 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVC2050JBT3G | ON Semiconductor | IC REG CCR 20V 50MA SMB | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVC2050JBT3G | onsemi | Description: IC CURRENT REGULATOR 15% SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 120V Current - Output: 50mA Accuracy: ±15% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMB Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 37500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVC2050JBT3G | onsemi | LED Lighting Driver ICs SMB 50 MA 15% CCR | auf Bestellung 3700 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVC2050JBT3G | ON Semiconductor | IC REG CCR 20V 50MA SMB | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVD070ALT1G | onsemi | Small Signal Switching Diodes SS SOT23 DUAL DIO 70V TR | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVD2004ML2T1 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSVD2004ML2T1/ | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSVD350HT1G | ON Semiconductor | Diodes - General Purpose, Power, Switching SS SOD323 SWCH DIO 3 | auf Bestellung 2327 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVD350HT1G | ON Semiconductor | Description: DIODE SWITCHING 350V SOD323 | auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVD4001DR2G | onsemi | Description: IC LED DRVR LIN PWM 500MA 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 28V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: 8-SOIC Dimming: PWM Voltage - Supply (Min): 3.6V Voltage - Supply (Max): 30V Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVD4001DR2G | ONSEMI | Description: ONSEMI - NSVD4001DR2G - LED-Treiber, 1 Ausgang, AEC-Q101, konstanter LED-Strom, bis zu 30Vin, 30V/500mAout, SOIC-8 tariffCode: 85423990 rohsCompliant: YES IC-Montage: Oberflächenmontage Ausgangsspannung, max.: 28V hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q100 IC-Gehäuse / Bauform: SOIC MSL: MSL 3 - 168 Stunden usEccn: EAR99 Anzahl der Kanäle: 1Kanäle Betriebstemperatur, min.: -40°C Eingangsspannung, max.: 30V euEccn: NLR Ausgangsstrom, max.: 500mA Eingangsspannung, min.: - Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 125°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 7884 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVD4001DR2G | ON Semiconductor | auf Bestellung 680 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVD4001DR2G | onsemi | LED Lighting Driver ICs MI SO8 60V LED DRVR TR | auf Bestellung 1481 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVD4001DR2G | onsemi | Description: IC LED DRVR LIN PWM 500MA 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 28V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: 8-SOIC Dimming: PWM Voltage - Supply (Min): 3.6V Voltage - Supply (Max): 30V Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9539 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVD4001DR2G | ONSEMI | Description: ONSEMI - NSVD4001DR2G - LED-Treiber, 1 Ausgang, AEC-Q101, konstanter LED-Strom, bis zu 30Vin, 30V/500mAout, SOIC-8 tariffCode: 85423990 rohsCompliant: YES IC-Montage: Oberflächenmontage Ausgangsspannung, max.: 28V hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q100 IC-Gehäuse / Bauform: SOIC MSL: MSL 3 - 168 Stunden usEccn: EAR99 Anzahl der Kanäle: 1Kanäle Betriebstemperatur, min.: -40°C Eingangsspannung, max.: 30V euEccn: NLR Ausgangsstrom, max.: 500mA Eingangsspannung, min.: - Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 125°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 7884 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVDAN222T1G | onsemi | Description: DIODE ARRAY GP 80V 100MA SC75 Qualification: AEC-Q101 Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SC-75, SOT-416 Current - Average Rectified (Io) (per Diode): 100mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active | auf Bestellung 8693 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVDAN222T1G | ON Semiconductor | Diodes - General Purpose, Power, Switching SS SC75 SWCH DIO 80V TR | auf Bestellung 15041 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVDAN222T1G | onsemi | Description: DIODE ARRAY GP 80V 100MA SC75 Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SC-75, SOT-416 Current - Average Rectified (Io) (per Diode): 100mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVDAN222T1G | onsemi | Diodes - General Purpose, Power, Switching 80 V Dual Common Cathode Switching Diode | auf Bestellung 967 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVDAP222T1G | ON Semiconductor | Diodes - General Purpose, Power, Switching SWITCHING DIODE (DUA | auf Bestellung 5870 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVDAP222T1G | onsemi | Description: DIODE SW 80V DUAL SC75-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVDP301MX2WT5G | onsemi | PIN Diodes Single PIN Diode for Attenuator and RF Switch Automotive part | auf Bestellung 8285 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVDP301MX2WT5G | ON Semiconductor | PIN Diode Single PIN Diode for Attenuator and RF Switch | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
