Produkte > IGO
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| IGO17 | auf Bestellung 1300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IGO60R042D1AUMA2 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| IGO60R042D1AUMA2 | Infineon Technologies | Trans JFET N-CH 600V 19A GaN T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IGO60R070D1AUMA1 | Infineon Technologies | MOSFET GAN HV | auf Bestellung 1164 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||
| IGO60R070D1AUMA1 | Infineon Technologies | Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IGO60R070D1AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Power dissipation: 125W Case: PG-DSO-20 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced Gate current: 20mA | Produkt ist nicht verfügbar | |||||||||||||||
| IGO60R070D1AUMA1 | Infineon Technologies | Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IGO60R070D1AUMA1 | Infineon Technologies | Description: GANFET N-CH 600V 31A 20DSO Packaging: Cut Tape (CT) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
| IGO60R070D1AUMA1 | Infineon Technologies | Description: GANFET N-CH 600V 31A 20DSO Packaging: Tape & Reel (TR) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
| IGO60R070D1AUMA1 | Infineon Technologies | Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IGO60R070D1AUMA1 | Infineon Technologies | Description: GANFET N-CH 600V 31A 20DSO Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | auf Bestellung 1353 Stücke: Lieferzeit 21-28 Tag (e) |
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| IGO60R070D1AUMA2 | Infineon Technologies | Description: GAN HV Packaging: Cut Tape (CT) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | auf Bestellung 82 Stücke: Lieferzeit 21-28 Tag (e) |
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| IGO60R070D1AUMA2 | INFINEON | Description: INFINEON - IGO60R070D1AUMA2 - Galliumnitrid (GaN)-Transistor, 600 V, 31 A, 0.07 ohm, 5.8 nC, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Durchgangswiderstand, Rds(on), max.: 0.07ohm usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.8nC Bauform - Transistor: SOIC Anzahl der Pins: 20Pin(s) Produktpalette: CoolGaN productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.07ohm | auf Bestellung 1589 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IGO60R070D1AUMA2 | Infineon Technologies | Description: GAN HV Packaging: Tape & Reel (TR) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
| IGO60R070D1AUMA2 | Infineon Technologies | MOSFET HV GAN DISCRETES | auf Bestellung 675 Stücke: Lieferzeit 14-28 Tag (e) |
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| IGO60R070D1AUMA2 | INFINEON | Description: INFINEON - IGO60R070D1AUMA2 - Galliumnitrid (GaN)-Transistor, 600 V, 31 A, 0.07 ohm, 5.8 nC, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.8nC Bauform - Transistor: SOIC Anzahl der Pins: 20Pin(s) Produktpalette: CoolGaN productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.07ohm | auf Bestellung 1589 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IGO60R070D1AUMA2 | Infineon Technologies | SP005557222 | Produkt ist nicht verfügbar | |||||||||||||||
| IGO60R070D1E8220AUMA1 | Infineon Technologies | Description: GAN HV Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
| IGO7470 | SANYO | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| IGOT60R042D1AUMA2 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R042D1AUMA2 | Infineon Technologies | Trans JFET N-CH 600V 19A GaN T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1 | Infineon Technologies | Infineon GAN HV | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1AUMA1 | Infineon Technologies | Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Power dissipation: 125W Case: PG-DSO-20 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhanced Gate current: 20mA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1AUMA1 | Infineon Technologies | Description: GANFET N-CH 600V 31A 20DSO Packaging: Tape & Reel (TR) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1AUMA1 | INFINEON | Description: INFINEON - IGOT60R070D1AUMA1 - Galliumnitrid (GaN)-Transistor, 600 V, 31 A, 0.07 ohm, 5.8 nC, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.8nC Bauform - Transistor: SOIC Anzahl der Pins: 20Pin(s) Produktpalette: CoolGaN productTraceability: No Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (08-Jul-2021) | auf Bestellung 652 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IGOT60R070D1AUMA1 | Infineon Technologies | 600V enhancement-mode JFET Transistor | auf Bestellung 685 Stücke: Lieferzeit 14-21 Tag (e) |
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| IGOT60R070D1AUMA1 | Infineon Technologies | MOSFET GAN HV | auf Bestellung 789 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||
| IGOT60R070D1AUMA1 | Infineon Technologies | Description: GANFET N-CH 600V 31A 20DSO Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | auf Bestellung 28 Stücke: Lieferzeit 21-28 Tag (e) |
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| IGOT60R070D1AUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Power dissipation: 125W Case: PG-DSO-20 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhanced Gate current: 20mA | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1AUMA1 | Infineon Technologies | Description: GANFET N-CH 600V 31A 20DSO Packaging: Cut Tape (CT) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1AUMA1 | INFINEON | Description: INFINEON - IGOT60R070D1AUMA1 - Galliumnitrid (GaN)-Transistor, 600 V, 31 A, 0.07 ohm, 5.8 nC, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Durchgangswiderstand, Rds(on), max.: 0.07ohm usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.8nC Bauform - Transistor: SOIC Anzahl der Pins: 20Pin(s) Produktpalette: CoolGaN productTraceability: No Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (08-Jul-2021) | auf Bestellung 652 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IGOT60R070D1AUMA3 | Infineon Technologies | IGOT60R070D1AUMA3 | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1AUMA3 | Infineon Technologies | MOSFET GAN HV | auf Bestellung 299 Stücke: Lieferzeit 14-28 Tag (e) |
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| IGOT60R070D1AUMA3 | Infineon Technologies | Description: GANFET N-CH Packaging: Tape & Reel (TR) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Part Status: Active Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| IGOT60R070D1AUMA3 | INFINEON | Description: INFINEON - IGOT60R070D1AUMA3 - Galliumnitrid (GaN)-Transistor, 600 V, 31 A, 0.07 ohm, 5.8 nC, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Durchgangswiderstand, Rds(on), max.: 0.07ohm usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.8nC Bauform - Transistor: SOIC Anzahl der Pins: 20Pin(s) Produktpalette: CoolGaN productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.07ohm | auf Bestellung 403 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IGOT60R070D1AUMA3 | INFINEON | Description: INFINEON - IGOT60R070D1AUMA3 - Galliumnitrid (GaN)-Transistor, 600 V, 31 A, 0.07 ohm, 5.8 nC, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.8nC Bauform - Transistor: SOIC Anzahl der Pins: 20Pin(s) Produktpalette: CoolGaN productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.07ohm | auf Bestellung 403 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IGOT60R070D1AUMA3 | Infineon Technologies | IGOT60R070D1AUMA3 | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1AUMA3 | Infineon Technologies | Description: GANFET N-CH Packaging: Cut Tape (CT) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Part Status: Active Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IGOT60R070D1AUMA3 | Infineon Technologies | SP005557207 | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1E8220AUMA1 | Infineon Technologies | Description: GAN HV | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1E8237AUMA1 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||
| IGOT60R070D1E8237AUMA1 | Infineon Technologies | Description: GAN HV | Produkt ist nicht verfügbar |