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NVL-201C
Produktcode: 48032
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TaiwanVerschiedene Bauteile > Verschiedene Bauteile 2
Beschreibung: 1-Kanal passiver Empfänger-Sender Video-Signal über Twisted-Paar 400m Farb., 600m s/w
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1+6.6 EUR
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NVLJD4007NZTAGonsemiDescription: MOSFET 2N-CH 30V 0.245A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 755mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 245mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: 6-WDFN (2x2)
Grade: Automotive
Qualification: AEC-Q101
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NVLJD4007NZTAGON SemiconductorTrans MOSFET N-CH 30V 0.245A Automotive 6-Pin WDFN EP T/R
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NVLJD4007NZTAGonsemiMOSFET NFET WDFN6 30V 1.4 Ohms
auf Bestellung 2019 Stücke:
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NVLJD4007NZTBGON SemiconductorTrans MOSFET N-CH 30V 0.245A Automotive 6-Pin WDFN EP T/R
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NVLJD4007NZTBGON SemiconductorMOSFET NFET WDFN6 30V 7OHM
auf Bestellung 2400 Stücke:
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NVLJD4007NZTBGonsemiDescription: MOSFET 2N-CH 30V 0.245A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 755mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 245mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: 6-WDFN (2x2)
Grade: Automotive
Qualification: AEC-Q101
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NVLJD4007NZTBGON Semiconductor
auf Bestellung 2130 Stücke:
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NVLJS053N12MCLTAGonsemiMOSFETs PTNG 120V LL NCH IN UDFN 20X20
auf Bestellung 3338 Stücke:
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2+1.46 EUR
10+1.01 EUR
100+0.7 EUR
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3000+0.46 EUR
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NVLJS053N12MCLTAGON SemiconductorPower MOSFET, Single N-Channel Automotive AEC-Q101
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NVLJS053N12MCLTAGonsemiDescription: PTNG 120V LL NCH IN UDFN 2.0X2.0
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V
Power Dissipation (Max): 620mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 30µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V
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NVLJS053N12MCLTAGONSEMINVLJS053N12MCLTAG SMD N channel transistors
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NVLJS053N12MCLTAGON SemiconductorPower MOSFET, Single N-Channel
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NVLJS053N12MCLTAGonsemiDescription: PTNG 120V LL NCH IN UDFN 2.0X2.0
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V
Power Dissipation (Max): 620mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 30µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V
auf Bestellung 2850 Stücke:
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17+1.04 EUR
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500+0.6 EUR
1000+0.51 EUR
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NVLJWD023N04CLTAGonsemiDescription: MOSFET 2N-CH 40V 7A 6WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: 6-WDFNW (2.2x2.3)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2143 Stücke:
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8+2.24 EUR
13+1.37 EUR
25+1.14 EUR
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250+0.76 EUR
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1000+0.62 EUR
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NVLJWD023N04CLTAGonsemiDescription: MOSFET 2N-CH 40V 7A 6WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: 6-WDFNW (2.2x2.3)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NVLJWD023N04CLTAGonsemiMOSFETs Single N-Channel uCool Power MOSFET 40V 25A 23mohm
auf Bestellung 250 Stücke:
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2+2.11 EUR
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500+0.67 EUR
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3000+0.52 EUR
6000+0.49 EUR
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NVLJWD040N06CLTAGONSEMICategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 54A
Anzahl je Verpackung: 1 Stücke
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NVLJWD040N06CLTAGonsemiMOSFETs MOSFET - Power, Dual N-Channel 60 V, 38 mohm, 18 A
auf Bestellung 2897 Stücke:
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2+2.11 EUR
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NVLJWD040N06CLTAGonsemiDescription: MOSFET 2N-CH 60V 5.5A 6WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: 6-WDFNW (2.2x2.3)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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8+2.34 EUR
13+1.44 EUR
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250+0.8 EUR
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1000+0.65 EUR
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NVLJWD040N06CLTAGON SemiconductorMOSFET Power Dual N-Channel Automotive AEC-Q101
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NVLJWD040N06CLTAGONSEMICategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 54A
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NVLJWD040N06CLTAGonsemiDescription: MOSFET 2N-CH 60V 5.5A 6WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: 6-WDFNW (2.2x2.3)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.57 EUR
6000+0.52 EUR
9000+0.5 EUR
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NVLJWS011N04CLTAGonsemiDescription: T6 40V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2061 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.13 EUR
14+1.29 EUR
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100+0.83 EUR
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NVLJWS011N04CLTAGonsemiMOSFETs Single N-Channel uCool Power MOSFET 40V 37A 11mohm
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NVLJWS011N04CLTAGonsemiDescription: T6 40V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Qualification: AEC-Q101
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NVLJWS011N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.58 EUR
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NVLJWS011N06CLTAGonsemiMOSFETs Single N-Channel wDFNW6 Power MOSFET 60 V, 48 A, 9mohm WDFNW6 (Pb?Free, Wettable Flanks)
auf Bestellung 1321 Stücke:
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3000+0.55 EUR
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NVLJWS011N06CLTAGONSEMINVLJWS011N06CLTAG SMD N channel transistors
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NVLJWS011N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5834 Stücke:
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500+0.73 EUR
1000+0.66 EUR
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NVLJWS011N06CLTAGON SemiconductorSingle N-Channel MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
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NVLJWS013N03CLTAGonsemiMOSFET T6 30V LL 2X2 WDFNW6
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NVLJWS013N03CLTAGONSEMINVLJWS013N03CLTAG SMD N channel transistors
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NVLJWS013N03CLTAGonsemiDescription: T6 30V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
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3000+0.42 EUR
6000+0.41 EUR
15000+0.39 EUR
Mindestbestellmenge: 3000
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NVLJWS013N03CLTAGON SemiconductorTrans MOSFET N-CH 30V 10A 6-Pin WDFNW EP T/R Automotive AEC-Q101
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NVLJWS013N03CLTAGonsemiDescription: T6 30V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
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16+1.16 EUR
18+1.03 EUR
25+0.97 EUR
100+0.74 EUR
250+0.63 EUR
500+0.59 EUR
1000+0.45 EUR
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NVLJWS022N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 14657 Stücke:
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10+1.95 EUR
15+1.19 EUR
25+0.99 EUR
100+0.76 EUR
250+0.65 EUR
500+0.59 EUR
1000+0.53 EUR
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NVLJWS022N06CLTAGONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 14W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVLJWS022N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
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NVLJWS022N06CLTAGonsemiMOSFET Single N-Channel uCool Power MOSFET 60 V, 25 A, 21 mohm
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Lieferzeit 143-147 Tag (e)
3+1.24 EUR
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NVLJWS022N06CLTAGONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 14W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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NVLJWS070N06CLTAGonsemiMOSFETs T6 60V LL 2X2 WDFNW6
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10+0.58 EUR
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NVLJWS070N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 127673 Stücke:
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NVLJWS070N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 126000 Stücke:
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NVLJWS5D0N03CLTAGonsemiDescription: T6 30V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Qualification: AEC-Q101
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NVLJWS5D0N03CLTAGonsemiDescription: T6 30V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Qualification: AEC-Q101
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NVLJWS6D0N04CLTAGonsemiDescription: T6 40V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
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NVLJWS6D0N04CLTAGONSEMINVLJWS6D0N04CLTAG SMD N channel transistors
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NVLJWS6D0N04CLTAGonsemiDescription: T6 40V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Qualification: AEC-Q101
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NVLUD4C26NTAGON SemiconductorPower MOSFET Dual N Channel
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NVLUS4C12NTAGON Semiconductor
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NVLUS4C12NTAGON SemiconductorDescription: MOSFET N-CH 30V 10.7A 6UDFN
auf Bestellung 12000 Stücke:
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NVLUS4C12NTAGonsemiMOSFET COMP UDFN6 30V 10.7A
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NVLUS4C12NTAGON SemiconductorTrans MOSFET N-CH 30V 10.7A Automotive AEC-Q101 6-Pin UDFN EP T/R
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