Produkte > NVL

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis
NVL-201C
Produktcode: 48032
zu Favoriten hinzufügen Lieblingsprodukt

TaiwanVerschiedene Bauteile > Verschiedene Bauteile 2
Beschreibung: 1-Kanal passiver Empfänger-Sender Video-Signal über Twisted-Paar 400m Farb., 600m s/w
Produkt ist nicht verfügbar
1+6.60 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVLJD4007NZTAGON SemiconductorTrans MOSFET N-CH 30V 0.245A Automotive 6-Pin WDFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJD4007NZTAGonsemiDescription: MOSFET 2N-CH 30V 0.245A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 755mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 245mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: 6-WDFN (2x2)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJD4007NZTAGonsemiMOSFET NFET WDFN6 30V 1.4 Ohms
auf Bestellung 2019 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVLJD4007NZTBGON SemiconductorTrans MOSFET N-CH 30V 0.245A Automotive 6-Pin WDFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJD4007NZTBGonsemiDescription: MOSFET 2N-CH 30V 0.245A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 755mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 245mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: 6-WDFN (2x2)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJD4007NZTBGON Semiconductor
auf Bestellung 2130 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVLJD4007NZTBGON SemiconductorMOSFET NFET WDFN6 30V 7OHM
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVLJS053N12MCLTAGON SemiconductorPower MOSFET, Single N-Channel Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJS053N12MCLTAGonsemiDescription: PTNG 120V LL NCH IN UDFN 2.0X2.0
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V
Power Dissipation (Max): 620mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 30µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.20 EUR
17+1.04 EUR
100+0.72 EUR
500+0.60 EUR
1000+0.51 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
NVLJS053N12MCLTAGON SemiconductorPower MOSFET, Single N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJS053N12MCLTAGonsemiDescription: PTNG 120V LL NCH IN UDFN 2.0X2.0
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V
Power Dissipation (Max): 620mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 30µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJS053N12MCLTAGONSEMINVLJS053N12MCLTAG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJS053N12MCLTAGonsemiMOSFET PTNG 120V LL NCH IN UDFN 2.0X2.0
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.26 EUR
10+1.11 EUR
100+0.76 EUR
500+0.64 EUR
1000+0.55 EUR
3000+0.47 EUR
6000+0.45 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWD023N04CLTAGonsemiDescription: MOSFET 2N-CH 40V 7A 6WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: 6-WDFNW (2.2x2.3)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWD023N04CLTAGonsemiMOSFETs Single N-Channel uCool Power MOSFET 40V 25A 23mohm
auf Bestellung 1715 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.08 EUR
10+1.20 EUR
100+0.81 EUR
500+0.73 EUR
1000+0.67 EUR
3000+0.57 EUR
6000+0.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWD023N04CLTAGonsemiDescription: MOSFET 2N-CH 40V 7A 6WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: 6-WDFNW (2.2x2.3)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2143 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
13+1.37 EUR
25+1.14 EUR
100+0.89 EUR
250+0.76 EUR
500+0.69 EUR
1000+0.62 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWD040N06CLTAGonsemiMOSFETs MOSFET - Power, Dual N-Channel 60 V, 38 mohm, 18 A
auf Bestellung 2954 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.56 EUR
10+1.24 EUR
100+0.83 EUR
500+0.74 EUR
1000+0.66 EUR
3000+0.56 EUR
6000+0.53 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWD040N06CLTAGonsemiDescription: MOSFET 2N-CH 60V 5.5A 6WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: 6-WDFNW (2.2x2.3)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.57 EUR
6000+0.52 EUR
9000+0.50 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWD040N06CLTAGON SemiconductorMOSFET Power Dual N-Channel Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWD040N06CLTAGONSEMINVLJWD040N06CLTAG Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWD040N06CLTAGonsemiDescription: MOSFET 2N-CH 60V 5.5A 6WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: 6-WDFNW (2.2x2.3)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
13+1.44 EUR
25+1.20 EUR
100+0.93 EUR
250+0.80 EUR
500+0.72 EUR
1000+0.65 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS011N04CLTAGonsemiDescription: T6 40V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS011N04CLTAGonsemiMOSFETs Single N-Channel uCool Power MOSFET 40V 37A 11mohm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS011N04CLTAGonsemiDescription: T6 40V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2061 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.13 EUR
14+1.29 EUR
25+1.08 EUR
100+0.83 EUR
250+0.71 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS011N06CLTAGONSEMINVLJWS011N06CLTAG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS011N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5834 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.39 EUR
13+1.47 EUR
25+1.22 EUR
100+0.95 EUR
250+0.82 EUR
500+0.73 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS011N06CLTAGonsemiMOSFETs Single N-Channel wDFNW6 Power MOSFET 60 V, 48 A, 9mohm WDFNW6 (Pb?Free, Wettable Flanks)
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.08 EUR
10+1.19 EUR
100+0.80 EUR
500+0.72 EUR
1000+0.66 EUR
3000+0.55 EUR
6000+0.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS011N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 2.9W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.58 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS011N06CLTAGON SemiconductorSingle N-Channel MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS013N03CLTAGonsemiDescription: T6 30V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
18+1.03 EUR
25+0.97 EUR
100+0.74 EUR
250+0.63 EUR
500+0.59 EUR
1000+0.45 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS013N03CLTAGON SemiconductorTrans MOSFET N-CH 30V 10A 6-Pin WDFNW EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS013N03CLTAGONSEMINVLJWS013N03CLTAG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS013N03CLTAGonsemiDescription: T6 30V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.42 EUR
6000+0.41 EUR
15000+0.39 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS013N03CLTAGonsemiMOSFET T6 30V LL 2X2 WDFNW6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS022N06CLTAGONSEMINVLJWS022N06CLTAG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS022N06CLTAGonsemiMOSFET Single N-Channel uCool Power MOSFET 60 V, 25 A, 21 mohm
auf Bestellung 3000 Stücke:
Lieferzeit 143-147 Tag (e)
3+1.24 EUR
10+1.09 EUR
100+0.75 EUR
500+0.62 EUR
1000+0.53 EUR
3000+0.44 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS022N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS070N06CLTAGonsemiMOSFETs T6 60V LL 2X2 WDFNW6
auf Bestellung 3890 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.02 EUR
10+0.87 EUR
100+0.57 EUR
500+0.52 EUR
1000+0.46 EUR
3000+0.42 EUR
6000+0.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS070N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1673 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
17+1.06 EUR
25+0.88 EUR
100+0.68 EUR
250+0.58 EUR
500+0.52 EUR
1000+0.46 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS070N06CLTAGonsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS5D0N03CLTAGonsemiDescription: T6 30V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.38 EUR
13+1.46 EUR
25+1.22 EUR
100+0.95 EUR
250+0.81 EUR
500+0.73 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS5D0N03CLTAGonsemiDescription: T6 30V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.57 EUR
6000+0.53 EUR
9000+0.51 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS6D0N04CLTAGonsemiDescription: T6 40V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
13+1.46 EUR
25+1.21 EUR
100+0.94 EUR
250+0.81 EUR
500+0.73 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS6D0N04CLTAGONSEMINVLJWS6D0N04CLTAG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS6D0N04CLTAGonsemiDescription: T6 40V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.57 EUR
6000+0.53 EUR
9000+0.51 EUR
15000+0.50 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NVLUD4C26NTAGON SemiconductorPower MOSFET Dual N Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVLUS4C12NTAGON SemiconductorDescription: MOSFET N-CH 30V 10.7A 6UDFN
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVLUS4C12NTAGON Semiconductor
auf Bestellung 2760 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVLUS4C12NTAGonsemiMOSFET COMP UDFN6 30V 10.7A
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.02 EUR
10+1.81 EUR
100+1.44 EUR
500+1.24 EUR
1000+1.07 EUR
3000+0.92 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVLUS4C12NTAGON SemiconductorTrans MOSFET N-CH 30V 10.7A Automotive AEC-Q101 6-Pin UDFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH