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| NVL-201C Produktcode: 48032
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| Taiwan | Verschiedene Bauteile > Verschiedene Bauteile 2 Beschreibung: Einkanaliger passiver Videosignal-Transceiver über Twisted Pair, 400m Farbe, 600m S/W | Produkt ist nicht verfügbar
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| NVLJD4007NZTAG | onsemi | MOSFET NFET WDFN6 30V 1.4 Ohms | auf Bestellung 2019 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJD4007NZTAG | onsemi | Description: MOSFET 2N-CH 30V 0.245A 6WDFN Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 1.5V @ 100µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Current - Continuous Drain (Id) @ 25°C: 245mA Drain to Source Voltage (Vdss): 30V Power - Max: 755mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJD4007NZTBG | ON Semiconductor | MOSFET NFET WDFN6 30V 7OHM | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJD4007NZTBG | onsemi | Description: MOSFET 2N-CH 30V 0.245A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 755mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 245mA Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: 6-WDFN (2x2) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJD4007NZTBG | ON Semiconductor | auf Bestellung 2130 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVLJS053N12MCLTAG | onsemi | Description: PTNG 120V LL NCH IN UDFN 2.0X2.0 Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-UDFN (2x2) Vgs(th) (Max) @ Id: 3V @ 30µA Power Dissipation (Max): 620mW (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) | auf Bestellung 2850 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJS053N12MCLTAG | onsemi | MOSFETs PTNG 120V LL NCH IN UDFN 20X20 | auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJS053N12MCLTAG | ON Semiconductor | Power MOSFET, Single N-Channel Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJS053N12MCLTAG | onsemi | Description: PTNG 120V LL NCH IN UDFN 2.0X2.0 Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-UDFN (2x2) Vgs(th) (Max) @ Id: 3V @ 30µA Power Dissipation (Max): 620mW (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWD023N04CLTAG | onsemi | Description: MOSFET 2N-CH 40V 7A 6WDFNW Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta), 24W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 6-WDFNW (2.2x2.3) Vgs(th) (Max) @ Id: 2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWD023N04CLTAG | onsemi | MOSFETs T6 40V LL 2X2 WDFNW6 | auf Bestellung 3471 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWD023N04CLTAG | onsemi | Description: MOSFET 2N-CH 40V 7A 6WDFNW Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 6-WDFNW (2.2x2.3) Vgs(th) (Max) @ Id: 2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta), 24W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWD040N06CLTAG | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 18A Power dissipation: 12W Case: WDFNW6 On-state resistance: 38mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhancement Pulsed drain current: 54A Gate-source voltage: ±20V Kind of package: reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWD040N06CLTAG | onsemi | Description: MOSFET 2N-CH 60V 5.5A 6WDFNW Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: 6-WDFNW (2.2x2.3) Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWD040N06CLTAG | onsemi | MOSFETs T6 60V LL 2X2 WDFNW6 | auf Bestellung 2696 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWD040N06CLTAG | onsemi | Description: MOSFET 2N-CH 60V 5.5A 6WDFNW Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: 6-WDFNW (2.2x2.3) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4248 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS011N04CLTAG | onsemi | Description: T6 40V LL 2X2 WDFNW6 Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWS011N04CLTAG | onsemi | MOSFETs T6 40V LL 2X2 WDFNW6 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWS011N04CLTAG | onsemi | Description: T6 40V LL 2X2 WDFNW6 Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 6-WDFNW (2.05x2.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWS011N06CLTAG | onsemi | Description: T6 60V LL 2X2 WDFNW6 Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Power Dissipation (Max): 2.9W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWS011N06CLTAG | onsemi | Description: T6 60V LL 2X2 WDFNW6 Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Power Dissipation (Max): 2.9W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: 6-WDFNW (2.05x2.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 912 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWS011N06CLTAG | onsemi | MOSFETs T6 60V LL 2X2 WDFNW6 | auf Bestellung 3134 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS013N03CLTAG | onsemi | Description: T6 30V LL 2X2 WDFNW6 Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS013N03CLTAG | onsemi | MOSFET T6 30V LL 2X2 WDFNW6 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWS013N03CLTAG | onsemi | Description: T6 30V LL 2X2 WDFNW6 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-WDFNW (2.05x2.05) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.4W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS022N06CLTAG | onsemi | Description: T6 60V LL 2X2 WDFNW6 Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 77µA Supplier Device Package: 6-WDFNW (2.05x2.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS022N06CLTAG | onsemi | MOSFETs T6 60V LL 2X2 WDFNW6 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWS022N06CLTAG | onsemi | Description: T6 60V LL 2X2 WDFNW6 Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 77µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 11402 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS070N06CLTAG | onsemi | Description: T6 60V LL 2X2 WDFNW6 Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V Power Dissipation (Max): 2.4W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2V @ 6µA Supplier Device Package: 6-WDFNW (2.05x2.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWS070N06CLTAG | onsemi | MOSFETs T6 60V LL 2X2 WDFNW6 | auf Bestellung 1535 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS070N06CLTAG | onsemi | Description: T6 60V LL 2X2 WDFNW6 Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V Power Dissipation (Max): 2.4W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2V @ 6µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLJWS5D0N03CLTAG | onsemi | Description: T6 30V LL 2X2 WDFNW6 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 6-WDFNW (2.05x2.05) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS5D0N03CLTAG | onsemi | Description: T6 30V LL 2X2 WDFNW6 Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS6D0N04CLTAG | onsemi | Description: T6 40V LL 2X2 WDFNW6 Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS6D0N04CLTAG | onsemi | Description: T6 40V LL 2X2 WDFNW6 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-WDFNW (2.05x2.05) Vgs(th) (Max) @ Id: 2V @ 34µA Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLUS4C12NTAG | onsemi | MOSFET COMP UDFN6 30V 10.7A | auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLUS4C12NTAG | ON Semiconductor | Trans MOSFET N-CH 30V 10.7A Automotive AEC-Q101 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVLUS4C12NTAG | ON Semiconductor | auf Bestellung 2760 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVLUS4C12NTAG | ON Semiconductor | Description: MOSFET N-CH 30V 10.7A 6UDFN | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |