Produkte > PMX

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
PMX-068(98F)
auf Bestellung 11992 Stücke:
Lieferzeit 21-28 Tag (e)
PMX-068(99A)
auf Bestellung 8430 Stücke:
Lieferzeit 21-28 Tag (e)
PMX-PR9000-LVORingModular Power Supplies High Voltage Modular power supply, EU type
Produkt ist nicht verfügbar
PMX100UNEZNexperiaMOSFET PMX100UNE/SOT8013/DFN0603-3
auf Bestellung 12249 Stücke:
Lieferzeit 14-28 Tag (e)
80+0.65 EUR
119+ 0.44 EUR
186+ 0.28 EUR
1000+ 0.12 EUR
2500+ 0.11 EUR
10000+ 0.086 EUR
15000+ 0.078 EUR
Mindestbestellmenge: 80
PMX100UNEZNexperia USA Inc.Description: PMX100UNE/SOT8013/DFN0603-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 10 V
Produkt ist nicht verfügbar
PMX100UNEZNexperia USA Inc.Description: PMX100UNE/SOT8013/DFN0603-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 10 V
auf Bestellung 5324 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
5000+ 0.099 EUR
Mindestbestellmenge: 40
PMX100UNZNexperia USA Inc.Description: PMX100UN/SOT8013/DFN0603-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1A, 4.5V
Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 144 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
15000+0.21 EUR
30000+ 0.2 EUR
Mindestbestellmenge: 15000
PMX100UNZNexperiaMOSFET PMX100UN/SOT8013/DFN0603-3
auf Bestellung 102750 Stücke:
Lieferzeit 14-28 Tag (e)
48+1.09 EUR
68+ 0.77 EUR
152+ 0.34 EUR
1000+ 0.24 EUR
2500+ 0.23 EUR
10000+ 0.21 EUR
Mindestbestellmenge: 48
PMX100UNZNexperia USA Inc.Description: PMX100UN/SOT8013/DFN0603-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1A, 4.5V
Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 144 pF @ 10 V
auf Bestellung 49667 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
35+ 0.76 EUR
100+ 0.38 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
2000+ 0.24 EUR
5000+ 0.23 EUR
Mindestbestellmenge: 24
PMX1303EHPHLBGA
auf Bestellung 3325 Stücke:
Lieferzeit 21-28 Tag (e)
PMX1503B5700STEI
auf Bestellung 60 Stücke:
Lieferzeit 21-28 Tag (e)
pmx2005hp
auf Bestellung 2331 Stücke:
Lieferzeit 21-28 Tag (e)
PMX3-256BEI SensorsEncoders QUADRATURE W/INDEX ROTARY OPT ENCODER
Produkt ist nicht verfügbar
PMX300UNEZNexperia USA Inc.Description: PMX300UNE/SOT8013/DFN0603-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 4.5V
Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 15 V
auf Bestellung 12755 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
5000+ 0.099 EUR
Mindestbestellmenge: 40
PMX300UNEZNexperia USA Inc.Description: PMX300UNE/SOT8013/DFN0603-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 4.5V
Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 15 V
Produkt ist nicht verfügbar
PMX300UNEZNexperiaMOSFET PMX300UNE/SOT8013/DFN0603-3
auf Bestellung 14205 Stücke:
Lieferzeit 14-28 Tag (e)
80+0.65 EUR
119+ 0.44 EUR
186+ 0.28 EUR
1000+ 0.12 EUR
2500+ 0.11 EUR
10000+ 0.086 EUR
15000+ 0.078 EUR
Mindestbestellmenge: 80
PMX400UPZNexperia USA Inc.Description: PMX400UP/SOT8013/DFN0603-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 10 V
auf Bestellung 16600 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
33+ 0.81 EUR
100+ 0.41 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
2000+ 0.25 EUR
Mindestbestellmenge: 24
PMX400UPZNexperiaMOSFET PMX400UP/SOT8013/DFN0603-3
auf Bestellung 42447 Stücke:
Lieferzeit 14-28 Tag (e)
46+1.14 EUR
65+ 0.81 EUR
143+ 0.36 EUR
1000+ 0.25 EUR
10000+ 0.23 EUR
15000+ 0.22 EUR
Mindestbestellmenge: 46
PMX400UPZNexperia USA Inc.Description: PMX400UP/SOT8013/DFN0603-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 10 V
Produkt ist nicht verfügbar
PMX700ENZNexperia USA Inc.Description: PMX700ENZ
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 400mA, 10V
Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 30 V
auf Bestellung 27843 Stücke:
Lieferzeit 21-28 Tag (e)
26+1.01 EUR
37+ 0.71 EUR
100+ 0.36 EUR
500+ 0.32 EUR
1000+ 0.25 EUR
2000+ 0.22 EUR
Mindestbestellmenge: 26
PMX700ENZNexperia USA Inc.Description: PMX700ENZ
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 400mA, 10V
Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN0603-3 (SOT8013)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 30 V
Produkt ist nicht verfügbar
PMX700ENZNexperiaMOSFET new products in DFN0603
auf Bestellung 15000 Stücke:
Lieferzeit 14-28 Tag (e)
52+1.02 EUR
69+ 0.76 EUR
110+ 0.47 EUR
1000+ 0.25 EUR
2500+ 0.22 EUR
10000+ 0.19 EUR
15000+ 0.18 EUR
Mindestbestellmenge: 52
PMX800ENEZNexperiaMOSFET new products in DFN0603
Produkt ist nicht verfügbar
PMXB120EPE147NXP USA Inc.Description: SMALL SIGNAL FET
auf Bestellung 648598 Stücke:
Lieferzeit 21-28 Tag (e)
PMXB120EPEZNexperiaTrans MOSFET P-CH 30V 2.4A 3-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
PMXB120EPEZNexperiaMOSFET PMXB120EPE/SOT1215/DFN1010D-3
auf Bestellung 18551 Stücke:
Lieferzeit 14-28 Tag (e)
59+0.89 EUR
76+ 0.69 EUR
138+ 0.38 EUR
1000+ 0.24 EUR
5000+ 0.23 EUR
10000+ 0.21 EUR
25000+ 0.2 EUR
Mindestbestellmenge: 59
PMXB120EPEZNexperia USA Inc.Description: MOSFET P-CH 30V 2.4A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
Power Dissipation (Max): 400mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V
auf Bestellung 31081 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
38+ 0.69 EUR
100+ 0.41 EUR
500+ 0.38 EUR
1000+ 0.26 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 30
PMXB120EPEZNEXPERIAPMXB120EPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB120EPEZNexperia USA Inc.Description: MOSFET P-CH 30V 2.4A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
Power Dissipation (Max): 400mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.23 EUR
10000+ 0.21 EUR
25000+ 0.2 EUR
Mindestbestellmenge: 5000
PMXB350UPE147Rochester Electronics, LLCDescription: SMALL SIGNAL FET
auf Bestellung 78076 Stücke:
Lieferzeit 21-28 Tag (e)
PMXB350UPEZNEXPERIATrans MOSFET P-CH 20V 1.2A 3-Pin DFN-D EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
PMXB350UPEZNexperia USA Inc.Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.22 EUR
Mindestbestellmenge: 5000
PMXB350UPEZNexperiaMOSFET PMXB350UPE/SOT1215/DFN1010D-3
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
52+1.02 EUR
73+ 0.72 EUR
162+ 0.32 EUR
1000+ 0.22 EUR
5000+ 0.21 EUR
10000+ 0.19 EUR
50000+ 0.16 EUR
Mindestbestellmenge: 52
PMXB350UPEZNEXPERIAPMXB350UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB350UPEZNexperia USA Inc.Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
26+1.01 EUR
37+ 0.71 EUR
100+ 0.36 EUR
500+ 0.32 EUR
1000+ 0.25 EUR
2000+ 0.22 EUR
Mindestbestellmenge: 26
PMXB360ENEAZNexperia USA Inc.Description: MOSFET N-CH 80V 1.1A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V
Power Dissipation (Max): 400mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 17202 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
38+ 0.69 EUR
100+ 0.42 EUR
500+ 0.38 EUR
1000+ 0.26 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 30
PMXB360ENEAZNEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 0.7A
On-state resistance: 887mΩ
Type of transistor: N-MOSFET
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4.5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4.4A
Mounting: SMD
Case: DFN1010D-3; SOT1215
Produkt ist nicht verfügbar
PMXB360ENEAZNexperiaMOSFET PMXB360ENEA/SOT1215/DFN1010D-3
auf Bestellung 21388 Stücke:
Lieferzeit 14-28 Tag (e)
60+0.87 EUR
78+ 0.67 EUR
139+ 0.37 EUR
1000+ 0.24 EUR
5000+ 0.23 EUR
10000+ 0.21 EUR
Mindestbestellmenge: 60
PMXB360ENEAZNEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 700mA; Idm: 4.4A
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 0.7A
On-state resistance: 887mΩ
Type of transistor: N-MOSFET
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4.5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4.4A
Mounting: SMD
Case: DFN1010D-3; SOT1215
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB360ENEAZNexperia USA Inc.Description: MOSFET N-CH 80V 1.1A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 1.1A, 10V
Power Dissipation (Max): 400mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.23 EUR
10000+ 0.21 EUR
Mindestbestellmenge: 5000
PMXB360ENEAZNEXPERIATrans MOSFET N-CH 80V 1.1A Automotive AEC-Q101 3-Pin DFN-D EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
PMXB40UNEZNEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 2.5A; Idm: 15A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 2.5A
Pulsed drain current: 15A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±8V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB40UNEZNEXPERIATrans MOSFET N-CH 12V 3.2A Automotive 3-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
PMXB40UNEZNexperia USA Inc.Description: MOSFET N-CH 12V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V
auf Bestellung 4225 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
30+ 0.87 EUR
100+ 0.54 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
2000+ 0.26 EUR
Mindestbestellmenge: 23
PMXB40UNEZNexperia USA Inc.Description: MOSFET N-CH 12V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 556 pF @ 10 V
Produkt ist nicht verfügbar
PMXB40UNEZNXPTrans MOSFET N-CH 12V 3.2A 3-Pin DFN-D EP PMXB40UNEZ TPMXB40u
Anzahl je Verpackung: 25 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.38 EUR
Mindestbestellmenge: 100
PMXB40UNEZNEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 2.5A; Idm: 15A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 2.5A
Pulsed drain current: 15A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±8V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMXB40UNEZNexperiaMOSFET PMXB40UNE/SOT1215/DFN1010D-3
auf Bestellung 21648 Stücke:
Lieferzeit 14-28 Tag (e)
51+1.03 EUR
73+ 0.72 EUR
112+ 0.47 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
5000+ 0.22 EUR
10000+ 0.2 EUR
Mindestbestellmenge: 51
PMXB43UNE,147Nexperia USA Inc.Description: 20V, N CHANNEL TRENCH MOSFET
auf Bestellung 80000 Stücke:
Lieferzeit 21-28 Tag (e)
PMXB43UNEZNexperia USA Inc.Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
auf Bestellung 56748 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
33+ 0.81 EUR
100+ 0.41 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
2000+ 0.25 EUR
Mindestbestellmenge: 24
PMXB43UNEZNEXPERIAPMXB43UNEZ SMD N channel transistors
Produkt ist nicht verfügbar
PMXB43UNEZNexperia USA Inc.Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
auf Bestellung 55000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.25 EUR
10000+ 0.22 EUR
25000+ 0.21 EUR
50000+ 0.18 EUR
Mindestbestellmenge: 5000
PMXB43UNEZNexperiaMOSFET PMXB43UNE/SOT1215/DFN1010D-3
auf Bestellung 15585 Stücke:
Lieferzeit 14-28 Tag (e)
47+1.12 EUR
61+ 0.86 EUR
100+ 0.53 EUR
500+ 0.37 EUR
1000+ 0.28 EUR
5000+ 0.25 EUR
10000+ 0.22 EUR
Mindestbestellmenge: 47
PMXB43UNEZNexperiaTrans MOSFET N-CH 20V 3.2A Automotive 3-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
PMXB56ENNXP SemiconductorsDescription: MOSFET N-CH 30V 3.2A 3DFN
Produkt ist nicht verfügbar
PMXB56ENNXP SemiconductorsDescription: MOSFET N-CH 30V 3.2A 3DFN
Produkt ist nicht verfügbar
PMXB56ENNXP SemiconductorsDescription: MOSFET N-CH 30V 3.2A 3DFN
Produkt ist nicht verfügbar
PMXB56EN147NXP USA Inc.Description: SMALL SIGNAL FET
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
PMXB56ENZNexperia USA Inc.Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Produkt ist nicht verfügbar
PMXB56ENZNexperiaMOSFET PMXB56EN/SOT1215/DFN1010D-3
auf Bestellung 11256 Stücke:
Lieferzeit 14-28 Tag (e)
44+1.2 EUR
58+ 0.9 EUR
100+ 0.56 EUR
500+ 0.39 EUR
1000+ 0.27 EUR
5000+ 0.26 EUR
Mindestbestellmenge: 44
PMXB56ENZNexperiaTrans MOSFET N-CH 30V 3.2A 3-Pin DFN-D EP T/R
auf Bestellung 9280 Stücke:
Lieferzeit 14-21 Tag (e)
565+0.28 EUR
847+ 0.18 EUR
1258+ 0.12 EUR
Mindestbestellmenge: 565
PMXB56ENZNexperiaTrans MOSFET N-CH 30V 3.2A 3-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
PMXB56ENZNexperia USA Inc.Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
auf Bestellung 618 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
33+ 0.81 EUR
100+ 0.41 EUR
500+ 0.36 EUR
Mindestbestellmenge: 24
PMXB56ENZNEXPERIATrans MOSFET N-CH 30V 3.2A 3-Pin DFN-D EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
PMXB56ENZNexperiaTrans MOSFET N-CH 30V 3.2A 3-Pin DFN-D EP T/R
auf Bestellung 588 Stücke:
Lieferzeit 14-21 Tag (e)
249+0.63 EUR
357+ 0.42 EUR
360+ 0.4 EUR
Mindestbestellmenge: 249
PMXB56ENZNEXPERIAPMXB56ENZ SMD N channel transistors
Produkt ist nicht verfügbar
PMXB65ENENXP SemiconductorsDescription: MOSFET N-CH 30V 3.2A 3DFN
auf Bestellung 3072 Stücke:
Lieferzeit 21-28 Tag (e)
PMXB65ENENexperiaNexperia
Produkt ist nicht verfügbar
PMXB65ENE,147NXP USA Inc.Description: NOW NEXPERIA PMXB65ENE - SMALL S
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN1010D-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
auf Bestellung 2082 Stücke:
Lieferzeit 21-28 Tag (e)
1401+0.5 EUR
Mindestbestellmenge: 1401
PMXB65ENE147NEXPERIADescription: NEXPERIA - PMXB65ENE147 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1233350 Stücke:
Lieferzeit 14-21 Tag (e)
PMXB65ENEZNexperia USA Inc.Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
auf Bestellung 9950 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
31+ 0.85 EUR
100+ 0.51 EUR
500+ 0.47 EUR
1000+ 0.32 EUR
2000+ 0.3 EUR
Mindestbestellmenge: 24
PMXB65ENEZNexperiaTrans MOSFET N-CH 30V 3.2A 3-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
PMXB65ENEZNexperiaMOSFET PMXB65ENE/SOT1215/DFN1010D-3
auf Bestellung 8939 Stücke:
Lieferzeit 14-28 Tag (e)
48+1.09 EUR
61+ 0.87 EUR
109+ 0.48 EUR
1000+ 0.3 EUR
5000+ 0.28 EUR
10000+ 0.26 EUR
25000+ 0.25 EUR
Mindestbestellmenge: 48
PMXB65ENEZNEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12.8A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
PMXB65ENEZNEXPERIATrans MOSFET N-CH 30V 3.2A 3-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
PMXB65ENEZNexperia USA Inc.Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.28 EUR
Mindestbestellmenge: 5000
PMXB65ENEZNEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12.8A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
PMXB65ENEZNXP SemiconductorsDescription: NEXPERIA PMXB65EN - SMALL SIGNAL
Packaging: Bulk
auf Bestellung 1233350 Stücke:
Lieferzeit 21-28 Tag (e)
2929+0.24 EUR
Mindestbestellmenge: 2929
PMXB65UPE147NXP USA Inc.Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010D-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V
auf Bestellung 8951063 Stücke:
Lieferzeit 21-28 Tag (e)
5495+0.12 EUR
Mindestbestellmenge: 5495
PMXB65UPEZNEXPERIATrans MOSFET P-CH 12V 3.2A 3-Pin DFN-D EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
PMXB65UPEZNEXPERIAPMXB65UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB65UPEZNexperia USA Inc.Description: MOSFET P-CH 12V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V
auf Bestellung 70201 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
34+ 0.77 EUR
100+ 0.39 EUR
500+ 0.32 EUR
1000+ 0.23 EUR
2000+ 0.2 EUR
Mindestbestellmenge: 24
PMXB65UPEZNexperia USA Inc.Description: MOSFET P-CH 12V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.19 EUR
10000+ 0.16 EUR
50000+ 0.13 EUR
Mindestbestellmenge: 5000
PMXB65UPEZNexperiaMOSFET PMXB65UPE/SOT1215/DFN1010D-3
auf Bestellung 43954 Stücke:
Lieferzeit 14-28 Tag (e)
47+1.11 EUR
68+ 0.77 EUR
169+ 0.31 EUR
1000+ 0.2 EUR
5000+ 0.18 EUR
10000+ 0.16 EUR
25000+ 0.15 EUR
Mindestbestellmenge: 47
PMXB75UPE/M5147NXP USA Inc.Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010D-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)
3328+0.21 EUR
Mindestbestellmenge: 3328
PMXB75UPE147NXPDescription: NXP - PMXB75UPE147 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 4088434 Stücke:
Lieferzeit 14-21 Tag (e)
PMXB75UPE147NXP USA Inc.Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010D-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
auf Bestellung 4088434 Stücke:
Lieferzeit 21-28 Tag (e)
4729+0.14 EUR
Mindestbestellmenge: 4729
PMXB75UPEZNexperia USA Inc.Description: MOSFET P-CH 20V 2.9A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.21 EUR
10000+ 0.18 EUR
Mindestbestellmenge: 5000
PMXB75UPEZNexperiaTrans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
PMXB75UPEZNexperiaMOSFET PMXB75UPE/SOT1215/DFN1010D-3
auf Bestellung 45113 Stücke:
Lieferzeit 14-28 Tag (e)
56+0.94 EUR
77+ 0.68 EUR
170+ 0.31 EUR
1000+ 0.22 EUR
5000+ 0.19 EUR
10000+ 0.18 EUR
25000+ 0.16 EUR
Mindestbestellmenge: 56
PMXB75UPEZNEXPERIATrans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
PMXB75UPEZNexperiaTrans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R
Produkt ist nicht verfügbar
PMXB75UPEZNEXPERIAPMXB75UPEZ SMD P channel transistors
Produkt ist nicht verfügbar
PMXB75UPEZNexperia USA Inc.Description: MOSFET P-CH 20V 2.9A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
auf Bestellung 36893 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.96 EUR
39+ 0.68 EUR
100+ 0.34 EUR
500+ 0.3 EUR
1000+ 0.24 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 28
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