Die Produkte nexperia usa inc.

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Foto Bezeichnung Tech.inf. Hersteller Beschreibung Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZX84-C10,235 BZX84-C10,235 PHGLS29437-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 10V 250MW TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
BZV55-C15,135 BZV55-C15,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 15V 500MW LLDS
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 200°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5096 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: DIODE ZENER 15V 500MW LLDS
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Voltage - Zener (Nom) (Vz): 15 V
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 30 Ohms
Operating Temperature: -65°C ~ 200°C
auf Bestellung 7119 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5096 Stücke - Preis und Lieferfrist anzeigen
48+ 0.55 EUR
54+ 0.48 EUR
100+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.094 EUR
5000+ 0.085 EUR
BZV55-C30,115 BZV55-C30,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 30V 500MW LLDS
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 200°C
auf Bestellung 13904 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 311554 Stücke - Preis und Lieferfrist anzeigen
48+ 0.55 EUR
54+ 0.48 EUR
100+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
NZX5V1D,133 NZX5V1D,133 NZX_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 5.1V 500MW ALF2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 2µA @ 2V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 5.1V
Part Status: Active
Base Part Number: NZX5V1
Supplier Device Package: ALF2
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 17556 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
BUK9Y11-30B,115 BUK9Y11-30B,115 BUK9Y11-30B.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 59A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: BUK9Y11
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1614pF @ 25V
Vgs (Max): ±15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 30V 59A LFPAK
Packaging: Cut Tape (CT)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 1614pF @ 25V
Power Dissipation (Max): 75W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
auf Bestellung 3890 Stücke
Lieferzeit 21-28 Tag (e)
BUK9Y19-55B,115 BUK9Y19-55B,115 BUK9Y19-55B.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 46A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1992 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 17890 Stücke - Preis und Lieferfrist anzeigen
PSMN2R5-30YL,115 PSMN2R5-30YL,115 PSMN2R5-30YL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 100A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3468 pF @ 12 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 30V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3468 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 6 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
PHB20N06T,118 PHB20N06T,118 PHGLS19797-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: MOSFET N-CH 55V 20.3A D2PAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16420 Stücke - Preis und Lieferfrist anzeigen
PSMN011-80YS,115 PSMN011-80YS,115 PSMN011-80YS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 67A LFPAK56
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2384 Stücke - Preis und Lieferfrist anzeigen
PSMN016-100YS,115 PSMN016-100YS,115 PSMN016-100YS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 51A LFPAK56
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3701 Stücke - Preis und Lieferfrist anzeigen
PSMN3R3-40YS,115 PSMN3R3-40YS,115 PSMN3R3-40YS.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 100A LFPAK56
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2754 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22429 Stücke - Preis und Lieferfrist anzeigen
BUK9635-55A,118 BUK9635-55A,118 BUK9635-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 34A D2PAK
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7240-100A,118 BUK7240-100A,118 BUK7240-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 34A DPAK
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2293pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4271 Stücke - Preis und Lieferfrist anzeigen
BUK7635-55A,118 BUK7635-55A,118 BUK7635-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 35A D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5574 Stücke - Preis und Lieferfrist anzeigen
800+ 1.8 EUR
Nexperia USA Inc. Description: MOSFET N-CH 55V 35A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1279 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5574 Stücke - Preis und Lieferfrist anzeigen
9+ 3.12 EUR
10+ 2.8 EUR
100+ 2.18 EUR
BUK7Y28-75B,115 BUK7Y28-75B,115 BUK7Y28-75B.pdf Nexperia USA Inc. Description: MOSFET N-CH 75V 35.5A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
BUK7613-60E,118 BUK7613-60E,118 BUK7613-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 58A D2PAK
Base Part Number: BUK7613
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power Dissipation (Max): 96W (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)
Nexperia USA Inc. Description: MOSFET N-CH 60V 58A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Base Part Number: BUK7613
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 96W (Tc)
auf Bestellung 2756 Stücke
Lieferzeit 21-28 Tag (e)
PSMN059-150Y,115 PSMN059-150Y,115 PSMN059-150Y.pdf Nexperia USA Inc. Description: MOSFET N-CH 150V 43A LFPAK56
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1529 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11514 Stücke - Preis und Lieferfrist anzeigen
BUK9209-40B,118 BUK9209-40B,118 BUK9209-40B.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 3619pF @ 25V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 992 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 40V 75A DPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 3619pF @ 25V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 10300 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 992 Stücke - Preis und Lieferfrist anzeigen
BUK7631-100E,118 BUK7631-100E,118 BUK7631-100E.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 34A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1981 Stücke - Preis und Lieferfrist anzeigen
PSMN1R2-30YLC,115 PSMN1R2-30YLC,115 PSMN1R2-30YLC.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13542 Stücke - Preis und Lieferfrist anzeigen
BUK7Y4R4-40EX BUK7Y4R4-40EX BUK7Y4R4-40E.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 100A LFPAK56
FET Type: N-Channel
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2781 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10720 Stücke - Preis und Lieferfrist anzeigen
BUK7Y22-100EX BUK7Y22-100EX BUK7Y22-100E.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9Y22-100E,115 BUK9Y22-100E,115 BUK9Y22-100E.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 49A LFPAK56
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9Y4R4-40E,115 BUK9Y4R4-40E,115 BUK9Y4R4-40E.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 100A LFPAK56
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 147W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4077pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R3-30YL,115 PSMN1R3-30YL,115 PSMN1R3-30YL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6227 pF @ 12 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN5R5-60YS,115 PSMN5R5-60YS,115 PSMN5R5-60YS.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3501pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
auf Bestellung 67500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47190 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 60V 100A LFPAK56
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3501pF @ 30V
Power Dissipation (Max): 130W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
auf Bestellung 67782 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47190 Stücke - Preis und Lieferfrist anzeigen
PSMN012-100YS,115 PSMN012-100YS,115 PSMN012-100YS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 60A LFPAK56
Base Part Number: PSMN012
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14260 Stücke - Preis und Lieferfrist anzeigen
PSMN2R0-30YLE,115 PSMN2R0-30YLE,115 PSMN2R0-30YLE.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2948 Stücke - Preis und Lieferfrist anzeigen
BUK9620-55A,118 BUK9620-55A,118 BUK9620-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 54A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 118W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4462 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 55V 54A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 118W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 2825 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4462 Stücke - Preis und Lieferfrist anzeigen
BUK768R3-60E,118 BUK768R3-60E,118 BUK768R3-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 75A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 137W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4155 Stücke - Preis und Lieferfrist anzeigen
800+ 2.58 EUR
Nexperia USA Inc. Description: MOSFET N-CH 60V 75A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4155 Stücke - Preis und Lieferfrist anzeigen
6+ 4.34 EUR
10+ 3.91 EUR
100+ 3.14 EUR
BUK765R3-40E,118 BUK765R3-40E,118 BUK765R3-40E.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9192 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 40V 75A D2PAK
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
auf Bestellung 183 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9192 Stücke - Preis und Lieferfrist anzeigen
10+ 2.65 EUR
12+ 2.36 EUR
100+ 1.84 EUR
BC857B,235 BC857B,235 BC856_BC857_BC858.pdf Nexperia USA Inc. Description: TRANS PNP 45V 100MA TO236AB
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMBT3904,235 PMBT3904,235 PMBT3904.pdf Nexperia USA Inc. Description: TRANS NPN 40V 200MA TO236AB
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
auf Bestellung 106503 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2703540 Stücke - Preis und Lieferfrist anzeigen
91+ 0.29 EUR
96+ 0.27 EUR
175+ 0.15 EUR
500+ 0.092 EUR
1000+ 0.062 EUR
2000+ 0.053 EUR
5000+ 0.048 EUR
PMBS3906,235 PMBS3906,235 PMBS3906.pdf Nexperia USA Inc. Description: TRANS PNP 40V 100MA TO236AB
Power - Max: 250 mW
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 38413 Stücke - Preis und Lieferfrist anzeigen
PMBS3906,215 PMBS3906,215 PMBS3906.pdf Nexperia USA Inc. Description: TRANS PNP 40V 100MA TO236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 150MHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2325362 Stücke - Preis und Lieferfrist anzeigen
BC857C,235 BC857C,235 BC856_BC857_BC858.pdf Nexperia USA Inc. Description: TRANS PNP 45V 0.1A SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24317 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.047 EUR
BC857C,215 BC857C,215 BC856_BC857_BC858.pdf Nexperia USA Inc. Description: TRANS PNP 45V 0.1A SOT23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
auf Bestellung 252000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1441734 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.059 EUR
6000+ 0.053 EUR
15000+ 0.046 EUR
30000+ 0.042 EUR
75000+ 0.037 EUR
Nexperia USA Inc. Description: TRANS PNP 45V 0.1A SOT23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
auf Bestellung 255325 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1441734 Stücke - Preis und Lieferfrist anzeigen
77+ 0.34 EUR
86+ 0.3 EUR
158+ 0.17 EUR
500+ 0.1 EUR
1000+ 0.069 EUR
BC817,235 BC817,235 BC817_SER.pdf Nexperia USA Inc. Description: TRANS NPN 45V 500MA TO236AB
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 137524 Stücke - Preis und Lieferfrist anzeigen
BC817,215 BC817,215 BC817_SER.pdf Nexperia USA Inc. Description: TRANS NPN 45V 500MA TO236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 490901 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: TRANS NPN 45V 500MA TO236AB
Power - Max: 250 mW
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1366 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 490901 Stücke - Preis und Lieferfrist anzeigen
63+ 0.42 EUR
69+ 0.38 EUR
126+ 0.21 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
BC856BW,135 BC856BW,135 BC856W_BC857W_BC858W.pdf Nexperia USA Inc. Description: TRANS PNP 65V 0.1A SOT323
Power - Max: 200 mW
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8810 Stücke - Preis und Lieferfrist anzeigen
BC856BW,115 BC856BW,115 BC856W_BC857W_BC858W.pdf Nexperia USA Inc. Description: TRANS PNP 65V 100MA SOT323
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10996 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: TRANS PNP 65V 100MA SOT323
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 1050 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10996 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
131+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
BCX70H,235 BCX70H,235 BCX70.pdf Nexperia USA Inc. Description: TRANS NPN 45V 0.1A SOT23
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BCX70H,215 BCX70H,215 BCX70.pdf Nexperia USA Inc. Description: TRANS NPN 45V 100MA TO236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3034 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 34856 Stücke - Preis und Lieferfrist anzeigen
50+ 0.52 EUR
57+ 0.46 EUR
104+ 0.25 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
PMST2222A,115 PMST2222A,115 PMST2222_2222A.pdf Nexperia USA Inc. Description: TRANS NPN 40V 600MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 56615 Stücke - Preis und Lieferfrist anzeigen
BCW32,215 BCW32,215 BCW31_BCW32_BCW33.pdf Nexperia USA Inc. Description: TRANS NPN 32V 100MA TO236AB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
Operating Temperature: 150°C (TJ)
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 206342 Stücke - Preis und Lieferfrist anzeigen
BFS19,235 BFS19,235 BFS19.pdf Nexperia USA Inc. Description: TRANS NPN 20V 30MA TO236AB
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 250 mW
Supplier Device Package: TO-236AB
Frequency - Transition: 260MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BF824,235 BF824,235 BF824.pdf Nexperia USA Inc. Description: TRANS PNP 30V 0.025A SOT23
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: TRANS PNP 30V 0.025A SOT23
Current - Collector Cutoff (Max): 50nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
auf Bestellung 3591 Stücke
Lieferzeit 21-28 Tag (e)
27+ 0.99 EUR
36+ 0.74 EUR
100+ 0.42 EUR
500+ 0.28 EUR
1000+ 0.21 EUR
2000+ 0.18 EUR
BSR19A,215 BSR19A,215 BSR19_BSR19A.pdf Nexperia USA Inc. Description: TRANS NPN 160V 0.3A SOT23
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12468 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
31+ 0.86 EUR
100+ 0.54 EUR
500+ 0.37 EUR
1000+ 0.28 EUR
BF824W,135 BF824W,135 BF824W.pdf Nexperia USA Inc. Description: TRANS PNP 30V 25MA SOT323
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8580 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: TRANS PNP 30V 25MA SOT323
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: SOT-323
auf Bestellung 117 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8580 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
35+ 0.76 EUR
100+ 0.43 EUR
PBSS8110T,215 PBSS8110T,215 PBSS8110T.pdf Nexperia USA Inc. Description: TRANS NPN 100V 1A TO236AB
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 123000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 52003 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.25 EUR
6000+ 0.24 EUR
15000+ 0.22 EUR
30000+ 0.2 EUR
Nexperia USA Inc. Description: TRANS NPN 100V 1A TO236AB
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 124008 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 52003 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
31+ 0.85 EUR
100+ 0.53 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
PBSS5220T,215 PBSS5220T,215 PBSS5220T.pdf Nexperia USA Inc. Description: TRANS PNP 20V 2A TO236AB
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 225mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 480 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5790 Stücke - Preis und Lieferfrist anzeigen
PBSS4240V,115 PBSS4240V,115 PBSS4240V.pdf Nexperia USA Inc. Description: TRANS NPN 40V 2A SOT666
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Not For New Designs
Supplier Device Package: SOT-666
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9850 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: TRANS NPN 40V 2A SOT666
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Not For New Designs
Supplier Device Package: SOT-666
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 5630 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9850 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
34+ 0.77 EUR
100+ 0.48 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
PBSS4220V,115 PBSS4220V,115 PBSS4220V.pdf Nexperia USA Inc. Description: TRANS NPN 20V 2A SOT666
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: SOT-666
Frequency - Transition: 210MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 58196 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: TRANS NPN 20V 2A SOT666
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: SOT-666
Frequency - Transition: 210MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 1290 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 58196 Stücke - Preis und Lieferfrist anzeigen
23+ 1.17 EUR
30+ 0.88 EUR
100+ 0.55 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
PBSS4032NT,215 PBSS4032NT,215 PBSS4032NT.pdf Nexperia USA Inc. Description: TRANS NPN 30V 2.6A SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2.6 A
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 180MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
BFS20,215 BFS20,215 BFS20.pdf Nexperia USA Inc. Description: TRANS NPN 20V 0.025A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 450MHz
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 25mA
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: BFS20
Supplier Device Package: TO-236AB
auf Bestellung 13831 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24624 Stücke - Preis und Lieferfrist anzeigen
BAT754L,115 BAT754L,115 BAT754L.pdf Nexperia USA Inc. Description: DIODE ARRAY SCHOTTKY 30V 6TSSOP
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 3 Independent
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN012-80BS,118 PSMN012-80BS,118 PSMN012-80BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 74A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN016-100BS,118 PSMN016-100BS,118 PSMN016-100BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN130-200D,118 PSMN130-200D,118 PSMN130-200D.pdf Nexperia USA Inc. Description: MOSFET N-CH 200V 20A DPAK
Rds On (Max) @ Id, Vgs: 130mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK6211-75C,118 BUK6211-75C,118 BUK6211-75C.pdf Nexperia USA Inc. Description: MOSFET N-CH 75V 74A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9Y09-40B,115 BUK9Y09-40B,115 BUK9Y09-40B.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 25 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 105.3W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4286 Stücke - Preis und Lieferfrist anzeigen
BUK9Y12-55B,115 BUK9Y12-55B,115 BUK9Y12-55B.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 61.8A LFPAK56
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Last Time Buy
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5810 Stücke - Preis und Lieferfrist anzeigen
BUK9Y19-75B,115 BUK9Y19-75B,115 BUK9Y19-75B.pdf Nexperia USA Inc. Description: MOSFET N-CH 75V 48.2A LFPAK56
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 3096 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 48.2A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX84-C10,235 PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C10,235
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 250MW TO236AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
BZV55-C15,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C15,135
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 15V 500MW LLDS
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 200°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12215 Stücke - Preis und Lieferfrist anzeigen
BZV55-C15,135 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C15,135
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 15V 500MW LLDS
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Voltage - Zener (Nom) (Vz): 15 V
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 30 Ohms
Operating Temperature: -65°C ~ 200°C
auf Bestellung 7119 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5096 Stücke - Preis und Lieferfrist anzeigen
48+ 0.55 EUR
54+ 0.48 EUR
100+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
2000+ 0.094 EUR
5000+ 0.085 EUR
BZV55-C30,115 PHGLS22257-1.pdf?t.download=true&u=5oefqw
BZV55-C30,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 500MW LLDS
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: LLDS; MiniMelf
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 200°C
auf Bestellung 13904 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 311554 Stücke - Preis und Lieferfrist anzeigen
48+ 0.55 EUR
54+ 0.48 EUR
100+ 0.26 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
NZX5V1D,133 NZX_SER.pdf
NZX5V1D,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 500MW ALF2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 2µA @ 2V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 5.1V
Part Status: Active
Base Part Number: NZX5V1
Supplier Device Package: ALF2
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 17556 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
BUK9Y11-30B,115 BUK9Y11-30B.pdf
BUK9Y11-30B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 59A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: BUK9Y11
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1614pF @ 25V
Vgs (Max): ±15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3890 Stücke - Preis und Lieferfrist anzeigen
BUK9Y11-30B,115 BUK9Y11-30B.pdf
BUK9Y11-30B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 59A LFPAK
Packaging: Cut Tape (CT)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 1614pF @ 25V
Power Dissipation (Max): 75W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
auf Bestellung 3890 Stücke
Lieferzeit 21-28 Tag (e)
BUK9Y19-55B,115 BUK9Y19-55B.pdf
BUK9Y19-55B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 46A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 17.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1992 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 17890 Stücke - Preis und Lieferfrist anzeigen
PSMN2R5-30YL,115 PSMN2R5-30YL.pdf
PSMN2R5-30YL,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3468 pF @ 12 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1506 Stücke - Preis und Lieferfrist anzeigen
PSMN2R5-30YL,115 PSMN2R5-30YL.pdf
PSMN2R5-30YL,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3468 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 6 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
PHB20N06T,118 PHGLS19797-1.pdf?t.download=true&u=5oefqw
PHB20N06T,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 20.3A D2PAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16420 Stücke - Preis und Lieferfrist anzeigen
PSMN011-80YS,115 PSMN011-80YS.pdf
PSMN011-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 67A LFPAK56
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2384 Stücke - Preis und Lieferfrist anzeigen
PSMN016-100YS,115 PSMN016-100YS.pdf
PSMN016-100YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 51A LFPAK56
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3701 Stücke - Preis und Lieferfrist anzeigen
PSMN3R3-40YS,115 PSMN3R3-40YS.pdf
PSMN3R3-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2754 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22429 Stücke - Preis und Lieferfrist anzeigen
BUK9635-55A,118 BUK9635-55A.pdf
BUK9635-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 34A D2PAK
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7240-100A,118 BUK7240-100A.pdf
BUK7240-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 34A DPAK
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2293pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4271 Stücke - Preis und Lieferfrist anzeigen
BUK7635-55A,118 BUK7635-55A.pdf
BUK7635-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 35A D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6853 Stücke - Preis und Lieferfrist anzeigen
800+ 1.8 EUR
BUK7635-55A,118 BUK7635-55A.pdf
BUK7635-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 35A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 872 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1279 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6374 Stücke - Preis und Lieferfrist anzeigen
9+ 3.12 EUR
10+ 2.8 EUR
100+ 2.18 EUR
BUK7Y28-75B,115 BUK7Y28-75B.pdf
BUK7Y28-75B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 35.5A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
BUK7613-60E,118 BUK7613-60E.pdf
BUK7613-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A D2PAK
Base Part Number: BUK7613
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power Dissipation (Max): 96W (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2756 Stücke - Preis und Lieferfrist anzeigen
BUK7613-60E,118 BUK7613-60E.pdf
BUK7613-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 58A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Base Part Number: BUK7613
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 96W (Tc)
auf Bestellung 2756 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
PSMN059-150Y,115 PSMN059-150Y.pdf
PSMN059-150Y,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 150V 43A LFPAK56
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1529 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11514 Stücke - Preis und Lieferfrist anzeigen
BUK9209-40B,118 BUK9209-40B.pdf
BUK9209-40B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 3619pF @ 25V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11292 Stücke - Preis und Lieferfrist anzeigen
BUK9209-40B,118 BUK9209-40B.pdf
BUK9209-40B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A DPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 3619pF @ 25V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 185°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 10300 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10992 Stücke - Preis und Lieferfrist anzeigen
BUK7631-100E,118 BUK7631-100E.pdf
BUK7631-100E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 34A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1981 Stücke - Preis und Lieferfrist anzeigen
PSMN1R2-30YLC,115 PSMN1R2-30YLC.pdf
PSMN1R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13542 Stücke - Preis und Lieferfrist anzeigen
BUK7Y4R4-40EX BUK7Y4R4-40E.pdf
BUK7Y4R4-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
FET Type: N-Channel
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2781 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10720 Stücke - Preis und Lieferfrist anzeigen
BUK7Y22-100EX BUK7Y22-100E.pdf
BUK7Y22-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9Y22-100E,115 BUK9Y22-100E.pdf
BUK9Y22-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9Y4R4-40E,115 BUK9Y4R4-40E.pdf
BUK9Y4R4-40E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 147W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4077pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R3-30YL,115 PSMN1R3-30YL.pdf
PSMN1R3-30YL,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6227 pF @ 12 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN5R5-60YS,115 PSMN5R5-60YS.pdf
PSMN5R5-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3501pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
auf Bestellung 67500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 114972 Stücke - Preis und Lieferfrist anzeigen
PSMN5R5-60YS,115 PSMN5R5-60YS.pdf
PSMN5R5-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3501pF @ 30V
Power Dissipation (Max): 130W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
auf Bestellung 67782 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 114690 Stücke - Preis und Lieferfrist anzeigen
PSMN012-100YS,115 PSMN012-100YS.pdf
PSMN012-100YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 60A LFPAK56
Base Part Number: PSMN012
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14260 Stücke - Preis und Lieferfrist anzeigen
PSMN2R0-30YLE,115 PSMN2R0-30YLE.pdf
PSMN2R0-30YLE,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5217 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2948 Stücke - Preis und Lieferfrist anzeigen
BUK9620-55A,118 BUK9620-55A.pdf
BUK9620-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 54A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 118W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7287 Stücke - Preis und Lieferfrist anzeigen
BUK9620-55A,118 BUK9620-55A.pdf
BUK9620-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 54A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 118W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 2825 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6862 Stücke - Preis und Lieferfrist anzeigen
BUK768R3-60E,118 BUK768R3-60E.pdf
BUK768R3-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 137W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4955 Stücke - Preis und Lieferfrist anzeigen
800+ 2.58 EUR
BUK768R3-60E,118 BUK768R3-60E.pdf
BUK768R3-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 43.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4955 Stücke - Preis und Lieferfrist anzeigen
6+ 4.34 EUR
10+ 3.91 EUR
100+ 3.14 EUR
BUK765R3-40E,118 BUK765R3-40E.pdf
BUK765R3-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9375 Stücke - Preis und Lieferfrist anzeigen
BUK765R3-40E,118 BUK765R3-40E.pdf
BUK765R3-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
auf Bestellung 183 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9192 Stücke - Preis und Lieferfrist anzeigen
10+ 2.65 EUR
12+ 2.36 EUR
100+ 1.84 EUR
BC857B,235 BC856_BC857_BC858.pdf
BC857B,235
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 100MA TO236AB
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PMBT3904,235 PMBT3904.pdf
PMBT3904,235
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 200MA TO236AB
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
auf Bestellung 106503 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2703540 Stücke - Preis und Lieferfrist anzeigen
91+ 0.29 EUR
96+ 0.27 EUR
175+ 0.15 EUR
500+ 0.092 EUR
1000+ 0.062 EUR
2000+ 0.053 EUR
5000+ 0.048 EUR
PMBS3906,235 PMBS3906.pdf
PMBS3906,235
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 100MA TO236AB
Power - Max: 250 mW
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 38413 Stücke - Preis und Lieferfrist anzeigen
PMBS3906,215 PMBS3906.pdf
PMBS3906,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 100MA TO236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 150MHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2325362 Stücke - Preis und Lieferfrist anzeigen
BC857C,235 BC856_BC857_BC858.pdf
BC857C,235
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24317 Stücke - Preis und Lieferfrist anzeigen
10000+ 0.047 EUR
BC857C,215 BC856_BC857_BC858.pdf
BC857C,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SOT23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
auf Bestellung 252000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1697059 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.059 EUR
6000+ 0.053 EUR
15000+ 0.046 EUR
30000+ 0.042 EUR
75000+ 0.037 EUR
BC857C,215 BC856_BC857_BC858.pdf
BC857C,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SOT23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
auf Bestellung 255325 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1693734 Stücke - Preis und Lieferfrist anzeigen
77+ 0.34 EUR
86+ 0.3 EUR
158+ 0.17 EUR
500+ 0.1 EUR
1000+ 0.069 EUR
BC817,235 BC817_SER.pdf
BC817,235
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 500MA TO236AB
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 137524 Stücke - Preis und Lieferfrist anzeigen
BC817,215 BC817_SER.pdf
BC817,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 500MA TO236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 492267 Stücke - Preis und Lieferfrist anzeigen
BC817,215 BC817_SER.pdf
BC817,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 500MA TO236AB
Power - Max: 250 mW
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1366 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 490901 Stücke - Preis und Lieferfrist anzeigen
63+ 0.42 EUR
69+ 0.38 EUR
126+ 0.21 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
BC856BW,135 BC856W_BC857W_BC858W.pdf
BC856BW,135
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A SOT323
Power - Max: 200 mW
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8810 Stücke - Preis und Lieferfrist anzeigen
BC856BW,115 BC856W_BC857W_BC858W.pdf
BC856BW,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 100MA SOT323
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12046 Stücke - Preis und Lieferfrist anzeigen
BC856BW,115 BC856W_BC857W_BC858W.pdf
BC856BW,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 100MA SOT323
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 1050 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10996 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
72+ 0.36 EUR
131+ 0.2 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
BCX70H,235 BCX70.pdf
BCX70H,235
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.1A SOT23
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BCX70H,215 BCX70.pdf
BCX70H,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 100MA TO236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3034 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 34856 Stücke - Preis und Lieferfrist anzeigen
50+ 0.52 EUR
57+ 0.46 EUR
104+ 0.25 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
PMST2222A,115 PMST2222_2222A.pdf
PMST2222A,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 600MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 56615 Stücke - Preis und Lieferfrist anzeigen
BCW32,215 BCW31_BCW32_BCW33.pdf
BCW32,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 32V 100MA TO236AB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
Operating Temperature: 150°C (TJ)
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 206342 Stücke - Preis und Lieferfrist anzeigen
BFS19,235 BFS19.pdf
BFS19,235
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 20V 30MA TO236AB
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 250 mW
Supplier Device Package: TO-236AB
Frequency - Transition: 260MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BF824,235 BF824.pdf
BF824,235
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 0.025A SOT23
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3591 Stücke - Preis und Lieferfrist anzeigen
BF824,235 BF824.pdf
BF824,235
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 0.025A SOT23
Current - Collector Cutoff (Max): 50nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
auf Bestellung 3591 Stücke
Lieferzeit 21-28 Tag (e)
27+ 0.99 EUR
36+ 0.74 EUR
100+ 0.42 EUR
500+ 0.28 EUR
1000+ 0.21 EUR
2000+ 0.18 EUR
BSR19A,215 BSR19_BSR19A.pdf
BSR19A,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 160V 0.3A SOT23
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12468 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
31+ 0.86 EUR
100+ 0.54 EUR
500+ 0.37 EUR
1000+ 0.28 EUR
BF824W,135 BF824W.pdf
BF824W,135
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 25MA SOT323
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: SOT-323
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8697 Stücke - Preis und Lieferfrist anzeigen
BF824W,135 BF824W.pdf
BF824W,135
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 25MA SOT323
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Active
Supplier Device Package: SOT-323
auf Bestellung 117 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8580 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
35+ 0.76 EUR
100+ 0.43 EUR
PBSS8110T,215 PBSS8110T.pdf
PBSS8110T,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 100V 1A TO236AB
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 123000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 176011 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.25 EUR
6000+ 0.24 EUR
15000+ 0.22 EUR
30000+ 0.2 EUR
PBSS8110T,215 PBSS8110T.pdf
PBSS8110T,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 100V 1A TO236AB
Power - Max: 480 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 124008 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 175003 Stücke - Preis und Lieferfrist anzeigen
23+ 1.14 EUR
31+ 0.85 EUR
100+ 0.53 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
PBSS5220T,215 PBSS5220T.pdf
PBSS5220T,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 20V 2A TO236AB
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 225mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 480 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5790 Stücke - Preis und Lieferfrist anzeigen
PBSS4240V,115 PBSS4240V.pdf
PBSS4240V,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 2A SOT666
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Not For New Designs
Supplier Device Package: SOT-666
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15480 Stücke - Preis und Lieferfrist anzeigen
PBSS4240V,115 PBSS4240V.pdf
PBSS4240V,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 2A SOT666
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Not For New Designs
Supplier Device Package: SOT-666
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 5630 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9850 Stücke - Preis und Lieferfrist anzeigen
26+ 1.01 EUR
34+ 0.77 EUR
100+ 0.48 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
PBSS4220V,115 PBSS4220V.pdf
PBSS4220V,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 20V 2A SOT666
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: SOT-666
Frequency - Transition: 210MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 59486 Stücke - Preis und Lieferfrist anzeigen
PBSS4220V,115 PBSS4220V.pdf
PBSS4220V,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 20V 2A SOT666
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: SOT-666
Frequency - Transition: 210MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 1290 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 58196 Stücke - Preis und Lieferfrist anzeigen
23+ 1.17 EUR
30+ 0.88 EUR
100+ 0.55 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
PBSS4032NT,215 PBSS4032NT.pdf
PBSS4032NT,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 30V 2.6A SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2.6 A
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 180MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
BFS20,215 BFS20.pdf
BFS20,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 20V 0.025A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 450MHz
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 25mA
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: BFS20
Supplier Device Package: TO-236AB
auf Bestellung 13831 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24624 Stücke - Preis und Lieferfrist anzeigen
BAT754L,115 BAT754L.pdf
BAT754L,115
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY SCHOTTKY 30V 6TSSOP
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 3 Independent
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN012-80BS,118 PSMN012-80BS.pdf
PSMN012-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 74A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN016-100BS,118 PSMN016-100BS.pdf
PSMN016-100BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 148W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN130-200D,118 PSMN130-200D.pdf
PSMN130-200D,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 20A DPAK
Rds On (Max) @ Id, Vgs: 130mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK6211-75C,118 BUK6211-75C.pdf
BUK6211-75C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 74A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9Y09-40B,115 BUK9Y09-40B.pdf
BUK9Y09-40B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 25 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 105.3W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4286 Stücke - Preis und Lieferfrist anzeigen
BUK9Y12-55B,115 BUK9Y12-55B.pdf
BUK9Y12-55B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 61.8A LFPAK56
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Last Time Buy
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5810 Stücke - Preis und Lieferfrist anzeigen
BUK9Y19-75B,115 BUK9Y19-75B.pdf
BUK9Y19-75B,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 48.2A LFPAK56
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 3096 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 48.2A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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