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PHD3055E,118 PHD3055E,118 NXP USA Inc. PHP_PHD3055E.pdf Description: MOSFET N-CH 60V 10.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
PHD33NQ20T,118 PHD33NQ20T,118 NXP USA Inc. Description: IC GATE DRVR HDMI 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 38-TSSOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PHD45N03LTA,118 PHD45N03LTA,118 NXP USA Inc. PHP%2CPHB%2CPHD45N03LTA.pdf Description: MOSFET N-CH 25V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
PHD45NQ15T,118 PHD45NQ15T,118 NXP USA Inc. Description: IC GATE DRVR HDMI 38TSSOP
Produkt ist nicht verfügbar
PHD55N03LTA,118 PHD55N03LTA,118 NXP USA Inc. PHP%2CPHB%2CPHD55N03LTA.pdf Description: MOSFET N-CH 25V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Produkt ist nicht verfügbar
PHD63NQ03LT,118 PHD63NQ03LT,118 NXP USA Inc. PHP,PHB,PHD63NQ03LT.pdf Description: MOSFET N-CH 30V 68.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68.9A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
PHD66NQ03LT,118 PHD66NQ03LT,118 NXP USA Inc. PHB,PHD66NQ03LT.pdf Description: MOSFET N-CH 25V 66A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
PHD78NQ03LT,118 PHD78NQ03LT,118 NXP USA Inc. Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 12 V
Produkt ist nicht verfügbar
PHD96NQ03LT,118 PHD96NQ03LT,118 NXP USA Inc. PHD96NQ03LT.pdf Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
PHD98N03LT,118 PHD98N03LT,118 NXP USA Inc. PHD98N03LT.pdf Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 20 V
Produkt ist nicht verfügbar
PHK12NQ10T,518 PHK12NQ10T,518 NXP USA Inc. PHK12NQ10T.pdf Description: MOSFET N-CH 100V 11.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Power Dissipation (Max): 8.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1965 pF @ 25 V
Produkt ist nicht verfügbar
PHK28NQ03LT,518 PHK28NQ03LT,518 NXP USA Inc. PHK28NQ03LT.pdf Description: MOSFET N-CH 30V 23.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
Produkt ist nicht verfügbar
PHK4NQ10T,518 PHK4NQ10T,518 NXP USA Inc. PHK4NQ10T.pdf Description: MOSFET N-CH 100V 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Produkt ist nicht verfügbar
PHK4NQ20T,518 PHK4NQ20T,518 NXP USA Inc. PHK4NQ20T.pdf Description: MOSFET N-CH 200V 4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 25 V
Produkt ist nicht verfügbar
PHM12NQ20T,518 PHM12NQ20T,518 NXP USA Inc. PHM12NQ20T.pdf Description: MOSFET N-CH 200V 14.4A 8HVSON
Produkt ist nicht verfügbar
PHM15NQ20T,518 PHM15NQ20T,518 NXP USA Inc. PHM15NQ20T.pdf Description: MOSFET N-CH 200V 17.5A 8HVSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HVSON (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 30 V
Produkt ist nicht verfügbar
PHM18NQ15T,518 PHM18NQ15T,518 NXP USA Inc. PHM18NQ15T.pdf Description: MOSFET N-CH 150V 19A 8HVSON
Produkt ist nicht verfügbar
PHM21NQ15T,518 PHM21NQ15T,518 NXP USA Inc. PHM21NQ15T.pdf Description: MOSFET N-CH 150V 22.2A 8HVSON
Produkt ist nicht verfügbar
PHM30NQ10T,518 PHM30NQ10T,518 NXP USA Inc. PHM30NQ10T.pdf Description: MOSFET N-CH 100V 37.6A 8HVSON
Produkt ist nicht verfügbar
PHP101NQ03LT,127 PHP101NQ03LT,127 NXP USA Inc. PHP101NQ03LT.pdf Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Produkt ist nicht verfügbar
PHP101NQ04T,127 PHP101NQ04T,127 NXP USA Inc. PHB101NQ04T.pdf Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Produkt ist nicht verfügbar
PHP110NQ06LT,127 PHP110NQ06LT,127 NXP USA Inc. PHB110NQ06LT.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3960 pF @ 25 V
Produkt ist nicht verfügbar
PHP112N06T,127 PHP112N06T,127 NXP USA Inc. PHP,PHB112N06T.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Produkt ist nicht verfügbar
PHP119NQ06T,127 PHP119NQ06T,127 NXP USA Inc. PHP119NQ06T.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 25 V
Produkt ist nicht verfügbar
PHP129NQ04LT,127 PHP129NQ04LT,127 NXP USA Inc. PHP,PHB129NQ04LT.pdf Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Produkt ist nicht verfügbar
PHP143NQ04T,127 PHP143NQ04T,127 NXP USA Inc. PHP_PHB143NQ04T-01.pdf Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
PHP14NQ20T,127 PHP14NQ20T,127 NXP USA Inc. PHP,PHB,PHD14NQ20T.pdf Description: MOSFET N-CH 200V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
PHP152NQ03LTA,127 PHP152NQ03LTA,127 NXP USA Inc. PHP_PHB152NQ03LTA-01.pdf Description: MOSFET N-CH 25V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V
Produkt ist nicht verfügbar
PHP174NQ04LT,127 PHP174NQ04LT,127 NXP USA Inc. PHP,PHB174NQ04LT.pdf Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5345 pF @ 25 V
Produkt ist nicht verfügbar
PHP176NQ04T,127 PHP176NQ04T,127 NXP USA Inc. PHP176NQ04T.pdf Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Produkt ist nicht verfügbar
PHP193NQ06T,127 PHP193NQ06T,127 NXP USA Inc. PHP,PHB193NQ06T.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5082 pF @ 25 V
Produkt ist nicht verfügbar
PHP21N06LT,127 PHP21N06LT,127 NXP USA Inc. PHB_PHD_PHP21N06LT.pdf Description: MOSFET N-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
PHP222NQ04LT,127 PHP222NQ04LT,127 NXP USA Inc. PHP,PHB222NQ04LT.pdf Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 25 V
Produkt ist nicht verfügbar
PHP225NQ04T,127 PHP225NQ04T,127 NXP USA Inc. PHP,PHB225NQ04T.pdf Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
PHP3055E,127 PHP3055E,127 NXP USA Inc. PHP_PHD3055E.pdf Description: MOSFET N-CH 60V 10.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
PHP32N06LT,127 PHP32N06LT,127 NXP USA Inc. PHP_B32N06LT_Rev_1.pdf Description: MOSFET N-CH 60V 34A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
PHP45NQ15T,127 PHP45NQ15T,127 NXP USA Inc. PHP,PHB45NQ15T.pdf Description: MOSFET N-CH 150V 45.1A TO220AB
Produkt ist nicht verfügbar
PHP52N06T,127 PHP52N06T,127 NXP USA Inc. Description: MOSFET N-CH 60V 52A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Produkt ist nicht verfügbar
PHP66NQ03LT,127 PHP66NQ03LT,127 NXP USA Inc. PHP_PHU66NQ03LT_6.pdf Description: MOSFET N-CH 25V 66A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
PHP73N06T,127 PHP73N06T,127 NXP USA Inc. PHP,PHB73N06T.pdf Description: MOSFET N-CH 60V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2464 pF @ 25 V
Produkt ist nicht verfügbar
PHP75NQ08T,127 PHP75NQ08T,127 NXP USA Inc. PHP75NQ08T.pdf Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
Produkt ist nicht verfügbar
PHP78NQ03LT,127 PHP78NQ03LT,127 NXP USA Inc. PHP78NQ03LT.pdf Description: MOSFET N-CH 25V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1074 pF @ 25 V
Produkt ist nicht verfügbar
PHP83N03LT,127 PHP83N03LT,127 NXP USA Inc. PHP_PHB_PHE83N03LT.pdf Description: MOSFET N-CH 25V 75A TO220AB
Produkt ist nicht verfügbar
PHT2NQ10T,135 PHT2NQ10T,135 NXP USA Inc. PHT2NQ10T.pdf Description: MOSFET N-CH 100V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1.75A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Produkt ist nicht verfügbar
PHT6N06LT,135 PHT6N06LT,135 NXP USA Inc. Description: MOSFET N-CH 55V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±13V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
PHT6N06T,135 PHT6N06T,135 NXP USA Inc. Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V
Produkt ist nicht verfügbar
PHU101NQ03LT,127 PHU101NQ03LT,127 NXP USA Inc. PHU101NQ03LT.pdf Description: MOSFET N-CH 30V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Produkt ist nicht verfügbar
PHU108NQ03LT,127 PHU108NQ03LT,127 NXP USA Inc. PHB_PHD_PHU108NQ03LT_3.pdf Description: MOSFET N-CH 25V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Produkt ist nicht verfügbar
PHU11NQ10T,127 PHU11NQ10T,127 NXP USA Inc. PHU11NQ10T.pdf Description: MOSFET N-CH 100V 10.9A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 57.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
PHU66NQ03LT,127 PHU66NQ03LT,127 NXP USA Inc. PHP_PHU66NQ03LT_6.pdf Description: MOSFET N-CH 25V 66A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
PHU78NQ03LT,127 PHU78NQ03LT,127 NXP USA Inc. PHU78NQ03LT.pdf Description: MOSFET N-CH 25V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 12 V
Produkt ist nicht verfügbar
PHW80NQ10T,127 PHW80NQ10T,127 NXP USA Inc. PHW80NQ10T_1.pdf Description: MOSFET N-CH 100V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 25 V
Produkt ist nicht verfügbar
PHX20N06T,127 PHX20N06T,127 NXP USA Inc. PHX20N06T.pdf Description: MOSFET N-CH 55V 12.9A SOT186A
Produkt ist nicht verfügbar
PHX23NQ11T,127 PHX23NQ11T,127 NXP USA Inc. PHX23NQ11T.pdf Description: MOSFET N-CH 110V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
PHX34NQ11T,127 PHX34NQ11T,127 NXP USA Inc. PHX34NQ11T.pdf Description: MOSFET N-CH 110V 24.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
PHX45NQ11T,127 PHX45NQ11T,127 NXP USA Inc. PHX45NQ11T.pdf Description: MOSFET N-CH 110V 30.4A TO220F
Produkt ist nicht verfügbar
PHX8NQ11T,127 PHX8NQ11T,127 NXP USA Inc. PHX8NQ11T.pdf Description: MOSFET N-CH 110V 7.5A SOT186A
Produkt ist nicht verfügbar
PIP3101-A,127 PIP3101-A,127 NXP USA Inc. PIP3101-A.pdf Description: IC PWR DRVR N-CH 1:1 SOT263B-01
Produkt ist nicht verfügbar
PIP3102-R,118 PIP3102-R,118 NXP USA Inc. PIP3102-R.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Produkt ist nicht verfügbar
PIP3213-R,118 PIP3213-R,118 NXP USA Inc. PIP3213-R_1.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
PHD3055E,118 PHP_PHD3055E.pdf
PHD3055E,118
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 10.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
PHD33NQ20T,118
PHD33NQ20T,118
Hersteller: NXP USA Inc.
Description: IC GATE DRVR HDMI 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 38-TSSOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PHD45N03LTA,118 PHP%2CPHB%2CPHD45N03LTA.pdf
PHD45N03LTA,118
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
PHD45NQ15T,118
PHD45NQ15T,118
Hersteller: NXP USA Inc.
Description: IC GATE DRVR HDMI 38TSSOP
Produkt ist nicht verfügbar
PHD55N03LTA,118 PHP%2CPHB%2CPHD55N03LTA.pdf
PHD55N03LTA,118
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Produkt ist nicht verfügbar
PHD63NQ03LT,118 PHP,PHB,PHD63NQ03LT.pdf
PHD63NQ03LT,118
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 68.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68.9A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
PHD66NQ03LT,118 PHB,PHD66NQ03LT.pdf
PHD66NQ03LT,118
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 66A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
PHD78NQ03LT,118
PHD78NQ03LT,118
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 12 V
Produkt ist nicht verfügbar
PHD96NQ03LT,118 PHD96NQ03LT.pdf
PHD96NQ03LT,118
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 25A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
PHD98N03LT,118 PHD98N03LT.pdf
PHD98N03LT,118
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 20 V
Produkt ist nicht verfügbar
PHK12NQ10T,518 PHK12NQ10T.pdf
PHK12NQ10T,518
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 11.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Power Dissipation (Max): 8.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1965 pF @ 25 V
Produkt ist nicht verfügbar
PHK28NQ03LT,518 PHK28NQ03LT.pdf
PHK28NQ03LT,518
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 23.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
Produkt ist nicht verfügbar
PHK4NQ10T,518 PHK4NQ10T.pdf
PHK4NQ10T,518
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Produkt ist nicht verfügbar
PHK4NQ20T,518 PHK4NQ20T.pdf
PHK4NQ20T,518
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 200V 4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 25 V
Produkt ist nicht verfügbar
PHM12NQ20T,518 PHM12NQ20T.pdf
PHM12NQ20T,518
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 200V 14.4A 8HVSON
Produkt ist nicht verfügbar
PHM15NQ20T,518 PHM15NQ20T.pdf
PHM15NQ20T,518
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 200V 17.5A 8HVSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HVSON (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 30 V
Produkt ist nicht verfügbar
PHM18NQ15T,518 PHM18NQ15T.pdf
PHM18NQ15T,518
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 150V 19A 8HVSON
Produkt ist nicht verfügbar
PHM21NQ15T,518 PHM21NQ15T.pdf
PHM21NQ15T,518
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 150V 22.2A 8HVSON
Produkt ist nicht verfügbar
PHM30NQ10T,518 PHM30NQ10T.pdf
PHM30NQ10T,518
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 37.6A 8HVSON
Produkt ist nicht verfügbar
PHP101NQ03LT,127 PHP101NQ03LT.pdf
PHP101NQ03LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Produkt ist nicht verfügbar
PHP101NQ04T,127 PHB101NQ04T.pdf
PHP101NQ04T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Produkt ist nicht verfügbar
PHP110NQ06LT,127 PHB110NQ06LT.pdf
PHP110NQ06LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3960 pF @ 25 V
Produkt ist nicht verfügbar
PHP112N06T,127 PHP,PHB112N06T.pdf
PHP112N06T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Produkt ist nicht verfügbar
PHP119NQ06T,127 PHP119NQ06T.pdf
PHP119NQ06T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 25 V
Produkt ist nicht verfügbar
PHP129NQ04LT,127 PHP,PHB129NQ04LT.pdf
PHP129NQ04LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Produkt ist nicht verfügbar
PHP143NQ04T,127 PHP_PHB143NQ04T-01.pdf
PHP143NQ04T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
PHP14NQ20T,127 PHP,PHB,PHD14NQ20T.pdf
PHP14NQ20T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 200V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
PHP152NQ03LTA,127 PHP_PHB152NQ03LTA-01.pdf
PHP152NQ03LTA,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V
Produkt ist nicht verfügbar
PHP174NQ04LT,127 PHP,PHB174NQ04LT.pdf
PHP174NQ04LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5345 pF @ 25 V
Produkt ist nicht verfügbar
PHP176NQ04T,127 PHP176NQ04T.pdf
PHP176NQ04T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Produkt ist nicht verfügbar
PHP193NQ06T,127 PHP,PHB193NQ06T.pdf
PHP193NQ06T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5082 pF @ 25 V
Produkt ist nicht verfügbar
PHP21N06LT,127 PHB_PHD_PHP21N06LT.pdf
PHP21N06LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
PHP222NQ04LT,127 PHP,PHB222NQ04LT.pdf
PHP222NQ04LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 25 V
Produkt ist nicht verfügbar
PHP225NQ04T,127 PHP,PHB225NQ04T.pdf
PHP225NQ04T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
PHP3055E,127 PHP_PHD3055E.pdf
PHP3055E,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 10.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
PHP32N06LT,127 PHP_B32N06LT_Rev_1.pdf
PHP32N06LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 34A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
PHP45NQ15T,127 PHP,PHB45NQ15T.pdf
PHP45NQ15T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 150V 45.1A TO220AB
Produkt ist nicht verfügbar
PHP52N06T,127
PHP52N06T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 52A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Produkt ist nicht verfügbar
PHP66NQ03LT,127 PHP_PHU66NQ03LT_6.pdf
PHP66NQ03LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 66A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
PHP73N06T,127 PHP,PHB73N06T.pdf
PHP73N06T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2464 pF @ 25 V
Produkt ist nicht verfügbar
PHP75NQ08T,127 PHP75NQ08T.pdf
PHP75NQ08T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
Produkt ist nicht verfügbar
PHP78NQ03LT,127 PHP78NQ03LT.pdf
PHP78NQ03LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1074 pF @ 25 V
Produkt ist nicht verfügbar
PHP83N03LT,127 PHP_PHB_PHE83N03LT.pdf
PHP83N03LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A TO220AB
Produkt ist nicht verfügbar
PHT2NQ10T,135 PHT2NQ10T.pdf
PHT2NQ10T,135
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1.75A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Produkt ist nicht verfügbar
PHT6N06LT,135
PHT6N06LT,135
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±13V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
PHT6N06T,135
PHT6N06T,135
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V
Produkt ist nicht verfügbar
PHU101NQ03LT,127 PHU101NQ03LT.pdf
PHU101NQ03LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Produkt ist nicht verfügbar
PHU108NQ03LT,127 PHB_PHD_PHU108NQ03LT_3.pdf
PHU108NQ03LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Produkt ist nicht verfügbar
PHU11NQ10T,127 PHU11NQ10T.pdf
PHU11NQ10T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 10.9A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 57.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
PHU66NQ03LT,127 PHP_PHU66NQ03LT_6.pdf
PHU66NQ03LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 66A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
PHU78NQ03LT,127 PHU78NQ03LT.pdf
PHU78NQ03LT,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 12 V
Produkt ist nicht verfügbar
PHW80NQ10T,127 PHW80NQ10T_1.pdf
PHW80NQ10T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 25 V
Produkt ist nicht verfügbar
PHX20N06T,127 PHX20N06T.pdf
PHX20N06T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 12.9A SOT186A
Produkt ist nicht verfügbar
PHX23NQ11T,127 PHX23NQ11T.pdf
PHX23NQ11T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 110V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
PHX34NQ11T,127 PHX34NQ11T.pdf
PHX34NQ11T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 110V 24.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
PHX45NQ11T,127 PHX45NQ11T.pdf
PHX45NQ11T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 110V 30.4A TO220F
Produkt ist nicht verfügbar
PHX8NQ11T,127 PHX8NQ11T.pdf
PHX8NQ11T,127
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 110V 7.5A SOT186A
Produkt ist nicht verfügbar
PIP3101-A,127 PIP3101-A.pdf
PIP3101-A,127
Hersteller: NXP USA Inc.
Description: IC PWR DRVR N-CH 1:1 SOT263B-01
Produkt ist nicht verfügbar
PIP3102-R,118 PIP3102-R.pdf
PIP3102-R,118
Hersteller: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Produkt ist nicht verfügbar
PIP3213-R,118 PIP3213-R_1.pdf
PIP3213-R,118
Hersteller: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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