| Foto | Bezeichnung | Hersteller | Beschreibung |
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NLVHCT132ADTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 2.1V Input Logic Level - Low: 0.5V ~ 0.6V Max Propagation Delay @ V, Max CL: 25ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NLVHCT132ADTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 2.1V Input Logic Level - Low: 0.5V ~ 0.6V Max Propagation Delay @ V, Max CL: 25ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| SVC371R-TL-E | onsemi |
Description: AM VARICAP 6 IN 1 VR 8V Packaging: Bulk |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MV5439A | onsemi |
Description: LED GREEN/RED DIFF 3 LEAD T/HPackaging: Bulk Package / Case: Radial - 3 Leads Color: Green, Red Mounting Type: Through Hole Millicandela Rating: 6mcd Green, 25mcd Red Configuration: Common Anode Voltage - Forward (Vf) (Typ): 2.3V Green, 1.7V Red Lens Color: White Current - Test: 20mA Green, 20mA Red Viewing Angle: 100° Height (Max): 10.08mm Wavelength - Peak: 565nm Green, 660nm Red Supplier Device Package: 3 LEAD Bi-Color T-1 3/4 Lens Transparency: Diffused Lens Style: Round with Domed Top Lens Size: 5mm, T-1 3/4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NSBA143TF3T5G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT1123Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistors Included: R1 Only |
auf Bestellung 144000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBA143TF3T5G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT1123Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistors Included: R1 Only |
auf Bestellung 150580 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVBA140NT3G | onsemi |
Description: DIODE SCHOTTKY 40V 1A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NRVBA140NT3G | onsemi |
Description: DIODE SCHOTTKY 40V 1A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3188 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBA143EF3T5G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT1123Packaging: Bulk Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
auf Bestellung 304000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBA143ZDP6T5G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-963Packaging: Bulk Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 |
auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBA143TDXV6T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 |
auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAT24C08WE-G | onsemi |
Description: CAT24EEPRO1KXSERIACMOPDSO8 Packaging: Bulk |
Produkt ist nicht verfügbar |
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MC14099BDWR2G | onsemi |
Description: IC LATCH 8BIT ADDRESS 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Standard Mounting Type: Surface Mount Circuit: 4:4 Logic Type: D-Type, Addressable Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 50ns Supplier Device Package: 16-SOIC |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC14099BDWR2G | onsemi |
Description: IC LATCH 8BIT ADDRESS 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Standard Mounting Type: Surface Mount Circuit: 4:4 Logic Type: D-Type, Addressable Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 50ns Supplier Device Package: 16-SOIC |
auf Bestellung 5812 Stücke: Lieferzeit 10-14 Tag (e) |
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MC78M05CDTX | onsemi |
Description: IC REG LINEAR 5V 500MA DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 5V PSRR: 80dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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H11F1300 | onsemi |
Description: OPTOISOLTR 5.3KV PHOTO FET 6-DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: MOSFET Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.3V Input Type: DC Voltage - Isolation: 5300Vrms Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 25µs, 25µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV8711BMTW300TBG | onsemi |
Description: IC REG LINEAR 3V 100MA 6-WDFNWPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 100mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2.5 µA Voltage - Input (Max): 18V Number of Regulators: 1 Supplier Device Package: 6-WDFNW (2x2) Voltage - Output (Min/Fixed): 3V Control Features: Current Limit, Enable, Power Good, Soft Start Grade: Automotive PSRR: 80dB ~ 48dB (10Hz ~ 1MHz) Voltage Dropout (Max): 0.355V @ 100mA Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV8711BMTW300TBG | onsemi |
Description: IC REG LINEAR 3V 100MA 6-WDFNWPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 100mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2.5 µA Voltage - Input (Max): 18V Number of Regulators: 1 Supplier Device Package: 6-WDFNW (2x2) Voltage - Output (Min/Fixed): 3V Control Features: Current Limit, Enable, Power Good, Soft Start Grade: Automotive PSRR: 80dB ~ 48dB (10Hz ~ 1MHz) Voltage Dropout (Max): 0.355V @ 100mA Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
auf Bestellung 2983 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8711BMTW330TBG | onsemi |
Description: IC REG LINEAR 3.3V 100MA 6-WDFNWPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 100mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2.5 µA Voltage - Input (Max): 18V Number of Regulators: 1 Supplier Device Package: 6-WDFNW (2x2) Voltage - Output (Min/Fixed): 3.3V Control Features: Current Limit, Enable, Power Good, Soft Start Grade: Automotive PSRR: 80dB ~ 48dB (10Hz ~ 1MHz) Voltage Dropout (Max): 0.355V @ 100mA Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
auf Bestellung 26850 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8730BMTW330TBG | onsemi |
Description: IC REG LINEAR 3.3V 150MA 6-WDFNWPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 3 µA Voltage - Input (Max): 38V Number of Regulators: 1 Supplier Device Package: 6-WDFNW (2x2) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Power Good, Soft Start Grade: Automotive PSRR: 80dB ~ 48dB (10Hz ~ 1MHz) Voltage Dropout (Max): 0.48V @ 150mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Current - Supply (Max): 450 µA Qualification: AEC-Q100 |
auf Bestellung 4319 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK4065-E | onsemi |
Description: MOSFET N-CH 75V 100A SMP Packaging: Bulk Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Supplier Device Package: SMP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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DSK10G-BT | onsemi |
Description: RECTIFIER DIODE, 1A, 600VPackaging: Bulk |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSK10B | onsemi |
Description: DIODE GEN PURP 100V 1A AXIALPackaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 116710 Stücke: Lieferzeit 10-14 Tag (e) |
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DSK10B | onsemi |
Description: DIODE GEN PURP 100V 1A AXIALPackaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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DSK10C | onsemi |
Description: DIODE GEN PURP 200V 1A AXIALPackaging: Bulk Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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DSK10E | onsemi |
Description: DIODE GEN PURP 400V 1A AXIALPackaging: Bulk Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 710159 Stücke: Lieferzeit 10-14 Tag (e) |
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DSK10E | onsemi |
Description: DIODE GEN PURP 400V 1A AXIALPackaging: Bulk Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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DSK10B-AT1 | onsemi |
Description: DIODE GEN PURP 100V 1A AXIALPackaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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DSK10B-BT | onsemi |
Description: DIODE GEN PURP 100V 1A AXIALPackaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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DSK10B-BT | onsemi |
Description: DIODE GEN PURP 100V 1A AXIALPackaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 305000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSK10C-AT1 | onsemi |
Description: DIODE GEN PURP 200V 1A AXIALPackaging: Tape & Reel (TR) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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DSK10C-AT1 | onsemi |
Description: DIODE GEN PURP 200V 1A AXIALPackaging: Bulk Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSK10C-BT | onsemi |
Description: DIODE GEN PURP 200V 1A AXIALPackaging: Tape & Reel (TR) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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DSK10C-ET1 | onsemi |
Description: DIODE GEN PURP 200V 1A AXIALPackaging: Tape & Reel (TR) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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DSK10E-AT1 | onsemi |
Description: DIODE GEN PURP 400V 1A AXIALPackaging: Tape & Reel (TR) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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DSK10E-BT | onsemi |
Description: DIODE GEN PURP 400V 1A AXIALPackaging: Tape & Reel (TR) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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DSK10E-BT | onsemi |
Description: DIODE GEN PURP 400V 1A AXIALPackaging: Bulk Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 3339333 Stücke: Lieferzeit 10-14 Tag (e) |
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DSK10E-ET1 | onsemi |
Description: DIODE GEN PURP 400V 1A AXIALPackaging: Tape & Reel (TR) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
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DSK10E-ET1 | onsemi |
Description: DIODE GEN PURP 400V 1A AXIALPackaging: Bulk Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NLV74VHC244DTR2G | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NLV74VHC244DTR2G | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV4949CPDR2G | onsemi |
Description: IC REG LINEAR 5V 100MA 8-SOIC-EPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 260 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: 8-SOIC-EP Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 5 mA Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV4949PDG | onsemi |
Description: IC REG LINEAR 5V 100MA 8-SOIC-EPPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 260 µA Voltage - Input (Max): 28V Number of Regulators: 1 Supplier Device Package: 8-SOIC-EP Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 5 mA Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV4949DWR2G | onsemi |
Description: IC REG LINEAR 5V 100MA 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 260 µA Voltage - Input (Max): 28V Number of Regulators: 1 Supplier Device Package: 20-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 5 mA Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV4949ADR2G | onsemi |
Description: IC REG LINEAR 5V 100MA 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 260 µA Voltage - Input (Max): 28V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Reset Output Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 5 mA |
Produkt ist nicht verfügbar |
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TIP29C | onsemi |
Description: TRANS NPN 100V 1A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N4454 | onsemi |
Description: DIODE STANDARD 50V 200MA DO35Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
auf Bestellung 49246 Stücke: Lieferzeit 10-14 Tag (e) |
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MM74HCT374N | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20DIPPackaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: Tri-State, Non-Inverted Mounting Type: Through Hole Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 7.2mA, 7.2mA Trigger Type: Positive Edge Clock Frequency: 30 MHz Input Capacitance: 10 pF Supplier Device Package: 20-PDIP Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP1681BAD2R2G | onsemi |
Description: TOTEM POLE CONTINUOUS CONDUCTIONPackaging: Tape & Reel (TR) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 65kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1681BAD2R2G | onsemi |
Description: TOTEM POLE CONTINUOUS CONDUCTIONPackaging: Cut Tape (CT) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 65kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
auf Bestellung 4456 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1681ABD2R2G | onsemi |
Description: TOTEM POLE CONTINUOUS CONDUCTIONPackaging: Tape & Reel (TR) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 95kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP1681ABD2R2G | onsemi |
Description: TOTEM POLE CONTINUOUS CONDUCTIONPackaging: Cut Tape (CT) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 95kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
auf Bestellung 2269 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1681AAD2R2G | onsemi |
Description: TOTEM POLE CONTINUOUS CONDUCTIONPackaging: Tape & Reel (TR) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 65kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP1681AAD2R2G | onsemi |
Description: TOTEM POLE CONTINUOUS CONDUCTIONPackaging: Cut Tape (CT) Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads Mounting Type: Surface Mount Voltage - Supply: 30V Frequency - Switching: 65kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 20-SOIC |
auf Bestellung 1875 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMC013P030Z | onsemi |
Description: P-CHANNEL POWERTRENCH MOSFET -30Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5785 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS016N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 3V @ 64µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 7475 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS2D3P04M8LT1G | onsemi |
Description: MV8 P INITIAL PROGRAMPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 205W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 2.7mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 4172 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS025P04M8LT1G | onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 255µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 1434 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS027N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 3.5W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 7020 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS003P03P8ZT1G | onsemi |
Description: PFET SO8FL -30V 3MOPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NLVHCT132ADTR2G |
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Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 25ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 25ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.5 EUR |
| NLVHCT132ADTR2G |
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Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 25ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 25ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.04 EUR |
| 15+ | 1.25 EUR |
| 25+ | 1.04 EUR |
| 100+ | 0.81 EUR |
| 250+ | 0.69 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |
| SVC371R-TL-E |
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 360+ | 1.39 EUR |
| MV5439A |
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Hersteller: onsemi
Description: LED GREEN/RED DIFF 3 LEAD T/H
Packaging: Bulk
Package / Case: Radial - 3 Leads
Color: Green, Red
Mounting Type: Through Hole
Millicandela Rating: 6mcd Green, 25mcd Red
Configuration: Common Anode
Voltage - Forward (Vf) (Typ): 2.3V Green, 1.7V Red
Lens Color: White
Current - Test: 20mA Green, 20mA Red
Viewing Angle: 100°
Height (Max): 10.08mm
Wavelength - Peak: 565nm Green, 660nm Red
Supplier Device Package: 3 LEAD Bi-Color T-1 3/4
Lens Transparency: Diffused
Lens Style: Round with Domed Top
Lens Size: 5mm, T-1 3/4
Description: LED GREEN/RED DIFF 3 LEAD T/H
Packaging: Bulk
Package / Case: Radial - 3 Leads
Color: Green, Red
Mounting Type: Through Hole
Millicandela Rating: 6mcd Green, 25mcd Red
Configuration: Common Anode
Voltage - Forward (Vf) (Typ): 2.3V Green, 1.7V Red
Lens Color: White
Current - Test: 20mA Green, 20mA Red
Viewing Angle: 100°
Height (Max): 10.08mm
Wavelength - Peak: 565nm Green, 660nm Red
Supplier Device Package: 3 LEAD Bi-Color T-1 3/4
Lens Transparency: Diffused
Lens Style: Round with Domed Top
Lens Size: 5mm, T-1 3/4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBA143TF3T5G |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.082 EUR |
| 16000+ | 0.074 EUR |
| 24000+ | 0.071 EUR |
| 40000+ | 0.066 EUR |
| 56000+ | 0.064 EUR |
| 80000+ | 0.061 EUR |
| NSBA143TF3T5G |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 150580 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 63+ | 0.28 EUR |
| 102+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.1 EUR |
| NRVBA140NT3G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVBA140NT3G |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3188 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 39+ | 0.46 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| 2000+ | 0.22 EUR |
| NSBA143EF3T5G |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Bulk
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Bulk
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 304000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4034+ | 0.11 EUR |
| NSBA143ZDP6T5G |
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Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2PNP 50V SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4013+ | 0.11 EUR |
| NSBA143TDXV6T1G |
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Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3659+ | 0.12 EUR |
| MC14099BDWR2G |
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Hersteller: onsemi
Description: IC LATCH 8BIT ADDRESS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 4:4
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
Description: IC LATCH 8BIT ADDRESS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 4:4
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.85 EUR |
| MC14099BDWR2G |
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Hersteller: onsemi
Description: IC LATCH 8BIT ADDRESS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 4:4
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
Description: IC LATCH 8BIT ADDRESS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 4:4
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
auf Bestellung 5812 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.27 EUR |
| 10+ | 2.03 EUR |
| 25+ | 1.93 EUR |
| 100+ | 1.48 EUR |
| 250+ | 1.31 EUR |
| 500+ | 1.24 EUR |
| MC78M05CDTX |
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Hersteller: onsemi
Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11F1300 |
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Hersteller: onsemi
Description: OPTOISOLTR 5.3KV PHOTO FET 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: MOSFET
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Voltage - Isolation: 5300Vrms
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 25µs, 25µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 5.3KV PHOTO FET 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: MOSFET
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Voltage - Isolation: 5300Vrms
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 25µs, 25µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8711BMTW300TBG |
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Hersteller: onsemi
Description: IC REG LINEAR 3V 100MA 6-WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 3V 100MA 6-WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8711BMTW300TBG |
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Hersteller: onsemi
Description: IC REG LINEAR 3V 100MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 3V 100MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 2983 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.9 EUR |
| 16+ | 1.16 EUR |
| 25+ | 0.97 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.64 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| NCV8711BMTW330TBG |
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Hersteller: onsemi
Description: IC REG LINEAR 3.3V 100MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 100MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2.5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.355V @ 100mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 26850 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.9 EUR |
| 16+ | 1.16 EUR |
| 25+ | 0.97 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.64 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| NCV8730BMTW330TBG |
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Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 3 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 450 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 150MA 6-WDFNW
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 3 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 450 µA
Qualification: AEC-Q100
auf Bestellung 4319 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.22 EUR |
| 13+ | 1.36 EUR |
| 25+ | 1.13 EUR |
| 100+ | 0.88 EUR |
| 250+ | 0.76 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |
| 2SK4065-E |
Hersteller: onsemi
Description: MOSFET N-CH 75V 100A SMP
Packaging: Bulk
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Description: MOSFET N-CH 75V 100A SMP
Packaging: Bulk
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 10.1 EUR |
| DSK10G-BT |
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auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3030+ | 0.15 EUR |
| DSK10B |
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Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 116710 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3806+ | 0.14 EUR |
| DSK10B |
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Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10C |
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Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10E |
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Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 710159 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3806+ | 0.14 EUR |
| DSK10E |
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Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10B-AT1 |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10B-BT |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10B-BT |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 305000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3806+ | 0.14 EUR |
| DSK10C-AT1 |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10C-AT1 |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3806+ | 0.14 EUR |
| DSK10C-BT |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10C-ET1 |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10E-AT1 |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10E-BT |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10E-BT |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3339333 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3806+ | 0.14 EUR |
| DSK10E-ET1 |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSK10E-ET1 |
![]() |
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3806+ | 0.14 EUR |
| NLV74VHC244DTR2G |
![]() |
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.53 EUR |
| NLV74VHC244DTR2G |
![]() |
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| NCV4949CPDR2G |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.73 EUR |
| 10+ | 2.32 EUR |
| 25+ | 1.96 EUR |
| 100+ | 1.55 EUR |
| 250+ | 1.34 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.12 EUR |
| NCV4949PDG |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV4949DWR2G |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 20-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 20-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV4949ADR2G |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset Output
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Description: IC REG LINEAR 5V 100MA 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset Output
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP29C |
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Hersteller: onsemi
Description: TRANS NPN 100V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS NPN 100V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4454 |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE STANDARD 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 49246 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.16 EUR |
| 278+ | 0.063 EUR |
| 321+ | 0.055 EUR |
| 500+ | 0.039 EUR |
| 1000+ | 0.032 EUR |
| 2000+ | 0.03 EUR |
| 5000+ | 0.021 EUR |
| 10000+ | 0.016 EUR |
| MM74HCT374N |
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Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1681BAD2R2G |
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Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 4.05 EUR |
| NCP1681BAD2R2G |
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Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
auf Bestellung 4456 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.4 EUR |
| 10+ | 6.87 EUR |
| 25+ | 5.95 EUR |
| 100+ | 4.91 EUR |
| 250+ | 4.39 EUR |
| 500+ | 4.08 EUR |
| 1000+ | 4.05 EUR |
| NCP1681ABD2R2G |
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Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1681ABD2R2G |
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Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
auf Bestellung 2269 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.84 EUR |
| 10+ | 3.06 EUR |
| 25+ | 2.6 EUR |
| 100+ | 2.07 EUR |
| 250+ | 1.81 EUR |
| 500+ | 1.66 EUR |
| 1000+ | 1.52 EUR |
| NCP1681AAD2R2G |
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Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1681AAD2R2G |
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Hersteller: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
auf Bestellung 1875 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.63 EUR |
| 10+ | 2.93 EUR |
| 25+ | 2.48 EUR |
| 100+ | 1.97 EUR |
| 250+ | 1.73 EUR |
| 500+ | 1.57 EUR |
| 1000+ | 1.45 EUR |
| FDMC013P030Z |
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Hersteller: onsemi
Description: P-CHANNEL POWERTRENCH MOSFET -30
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5785 pF @ 15 V
Description: P-CHANNEL POWERTRENCH MOSFET -30
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5785 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 194+ | 2.73 EUR |
| NVMFWS016N10MCLT1G |
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Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 7475 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 11+ | 1.64 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.87 EUR |
| NVMFWS2D3P04M8LT1G |
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Hersteller: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Qualification: AEC-Q101
Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4172 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.74 EUR |
| 10+ | 4.45 EUR |
| 100+ | 3.14 EUR |
| 500+ | 2.9 EUR |
| NVMFWS025P04M8LT1G |
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Hersteller: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Qualification: AEC-Q101
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1434 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 16+ | 1.14 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.75 EUR |
| NVMFWS027N10MCLT1G |
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Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 7020 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 14+ | 1.29 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.73 EUR |
| NVMFS003P03P8ZT1G |
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Hersteller: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Description: PFET SO8FL -30V 3MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH











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