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MURA215T3G MURA215T3G onsemi mura215t3-d.pdf Description: DIODE GEN PURP 150V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
auf Bestellung 158121 Stücke:
Lieferzeit 10-14 Tag (e)
2435+0.24 EUR
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BZX85C3V9 BZX85C3V9 onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 3.9V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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NCV8664CDT50RKG NCV8664CDT50RKG onsemi ncv8664c-d.pdf Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Qualification: AEC-Q100
auf Bestellung 157500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.05 EUR
5000+1.02 EUR
7500+1.01 EUR
12500+1 EUR
17500+0.99 EUR
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NCV8664CDT50RKG NCV8664CDT50RKG onsemi ncv8664c-d.pdf Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Qualification: AEC-Q100
auf Bestellung 157877 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.15 EUR
14+1.57 EUR
25+1.42 EUR
100+1.26 EUR
250+1.18 EUR
500+1.13 EUR
1000+1.09 EUR
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SECO-HVDCDC1362-40W15V-GEVB SECO-HVDCDC1362-40W15V-GEVB onsemi SECO-HVDCDC1362-40W15V-GEVB_TEST_PROCEDURE.PDF Description: EVAL BOARD FOR NCV1362 NCP1362
Packaging: Box
Voltage - Output: 15V
Voltage - Input: 240V ~ 900V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCV1362, NCP1362
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Power - Output: 40 W
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+110.86 EUR
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NTMFS5H600NLT1G NTMFS5H600NLT1G onsemi ntmfs5h600nl-d.pdf Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NTMFS5H600NLT1G-IRH1 NTMFS5H600NLT1G-IRH1 onsemi NTMFS5H600NL-D.PDF Description: T8 60V LOW COSS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NTMFS5H600NLT1G-IRH1 NTMFS5H600NLT1G-IRH1 onsemi NTMFS5H600NL-D.PDF Description: T8 60V LOW COSS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.38 EUR
10+5.52 EUR
50+4.3 EUR
100+3.9 EUR
500+3.32 EUR
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NTMFS5H600NLT3G NTMFS5H600NLT3G onsemi ntmfs5h600nl-d.pdf Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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NTMFS5H600NLT3G NTMFS5H600NLT3G onsemi ntmfs5h600nl-d.pdf Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Produkt ist nicht verfügbar
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NVMFS6H852NLT1G NVMFS6H852NLT1G onsemi nvmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NVMFS6H852NLT1G NVMFS6H852NLT1G onsemi nvmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.84 EUR
12+1.8 EUR
50+1.33 EUR
100+1.19 EUR
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NTMFS6H801NLT1G NTMFS6H801NLT1G onsemi ntmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
auf Bestellung 44138 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.68 EUR
10+3.69 EUR
100+2.56 EUR
500+2.07 EUR
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NTMFS5C406NLT1G NTMFS5C406NLT1G onsemi ntmfs5c406nl-d.pdf Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NTMFS5C406NLT1G NTMFS5C406NLT1G onsemi ntmfs5c406nl-d.pdf Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.89 EUR
10+4.52 EUR
100+3.17 EUR
500+2.58 EUR
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NTMFS5H400NLT3G NTMFS5H400NLT3G onsemi ntmfs5h400nl-d.pdf Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+2.62 EUR
Mindestbestellmenge: 5000 Stücke
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NTMFS5H400NLT3G NTMFS5H400NLT3G onsemi ntmfs5h400nl-d.pdf Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
auf Bestellung 11845 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.94 EUR
10+5.12 EUR
25+4.38 EUR
100+3.55 EUR
250+3.14 EUR
500+2.89 EUR
1000+2.68 EUR
2500+2.62 EUR
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NTMFS5H409NLT3G NTMFS5H409NLT3G onsemi ntmfs5h409nl-d.pdf Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.9 EUR
Mindestbestellmenge: 5000 Stücke
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NTMFS5H409NLT3G NTMFS5H409NLT3G onsemi ntmfs5h409nl-d.pdf Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 49829 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.33 EUR
10+4.02 EUR
25+3.43 EUR
100+2.75 EUR
250+2.42 EUR
500+2.21 EUR
1000+2.03 EUR
2500+1.9 EUR
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NTMFS5H431NLT1G NTMFS5H431NLT1G onsemi ntmfs5h431nl-d.pdf Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.89 EUR
Mindestbestellmenge: 1500 Stücke
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NTMFS5H431NLT1G NTMFS5H431NLT1G onsemi ntmfs5h431nl-d.pdf Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
auf Bestellung 1819 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.39 EUR
10+2.15 EUR
50+1.62 EUR
100+1.44 EUR
500+1.13 EUR
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NTMFS5C645NLT1G NTMFS5C645NLT1G onsemi ntmfs5c645nl-d.pdf Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+2.24 EUR
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NTMFS5C645NLT1G NTMFS5C645NLT1G onsemi ntmfs5c645nl-d.pdf Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 1644 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.68 EUR
10+4.36 EUR
100+3.05 EUR
500+2.49 EUR
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NTMFS6H864NLT1G NTMFS6H864NLT1G onsemi ntmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
auf Bestellung 19919 Stücke:
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12+1.87 EUR
19+1.17 EUR
100+0.76 EUR
500+0.58 EUR
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NTMFS6H818NLT1G NTMFS6H818NLT1G onsemi ntmfs6h818nl-d.pdf Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.51 EUR
3000+1.45 EUR
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NTMFS6H818NLT1G NTMFS6H818NLT1G onsemi ntmfs6h818nl-d.pdf Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
auf Bestellung 4420 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.3 EUR
10+3.43 EUR
50+2.62 EUR
100+2.36 EUR
500+1.89 EUR
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NTMFS6H818NT1G NTMFS6H818NT1G onsemi ntmfs6h818n-d.pdf Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.46 EUR
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NTMFS6H818NT1G NTMFS6H818NT1G onsemi ntmfs6h818n-d.pdf Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
auf Bestellung 2895 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.66 EUR
10+3.01 EUR
100+2.06 EUR
500+1.65 EUR
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NTMFS6H858NT1G NTMFS6H858NT1G onsemi ntmfs6h858n-d.pdf Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NTMFS6H858NT1G NTMFS6H858NT1G onsemi ntmfs6h858n-d.pdf Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFS6H852NLT1G NTMFS6H852NLT1G onsemi ntmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NTMFS6H852NLT1G NTMFS6H852NLT1G onsemi ntmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
auf Bestellung 1492 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
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NTMFS6H852NT1G NTMFS6H852NT1G onsemi ntmfs6h852n-d.pdf Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.77 EUR
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NTMFS6H852NT1G NTMFS6H852NT1G onsemi ntmfs6h852n-d.pdf Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.76 EUR
15+1.44 EUR
100+1.12 EUR
500+0.95 EUR
Mindestbestellmenge: 12 Stücke
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NTMFS6H848NLT1G NTMFS6H848NLT1G onsemi ntmfs6h848nl-d.pdf Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
auf Bestellung 13500 Stücke:
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1500+0.88 EUR
3000+0.81 EUR
Mindestbestellmenge: 1500 Stücke
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NTMFS6H848NLT1G NTMFS6H848NLT1G onsemi ntmfs6h848nl-d.pdf Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
auf Bestellung 13831 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.33 EUR
10+2.11 EUR
50+1.58 EUR
100+1.42 EUR
500+1.11 EUR
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NTMFS6H800NLT1G NTMFS6H800NLT1G onsemi ntmfs6h800nl-d.pdf Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 4500 Stücke:
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1500+2.67 EUR
Mindestbestellmenge: 1500 Stücke
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NTMFS6H800NLT1G NTMFS6H800NLT1G onsemi ntmfs6h800nl-d.pdf Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 5815 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.35 EUR
10+5.5 EUR
50+4.27 EUR
100+3.87 EUR
500+3.27 EUR
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SZBZX84C3V9ET3G SZBZX84C3V9ET3G onsemi bzx84c2v4et1-d.pdf Description: DIODE ZENER 3.9V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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10000+0.064 EUR
Mindestbestellmenge: 10000 Stücke
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SZBZX84C3V9ET3G SZBZX84C3V9ET3G onsemi bzx84c2v4et1-d.pdf Description: DIODE ZENER 3.9V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
88+0.24 EUR
124+0.17 EUR
143+0.14 EUR
500+0.11 EUR
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SZBZX84C3V9LT1G SZBZX84C3V9LT1G onsemi bzx84c2v4lt1-d.pdf Description: DIODE ZENER 3.9V 250MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.063 EUR
Mindestbestellmenge: 3000 Stücke
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SZBZX84C3V9LT1G SZBZX84C3V9LT1G onsemi bzx84c2v4lt1-d.pdf Description: DIODE ZENER 3.9V 250MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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149+0.14 EUR
173+0.12 EUR
500+0.088 EUR
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FSA9280AUMX FSA9280AUMX onsemi fsa9288a-d.pdf Description: IC USB MULTIMEDIA SWITCH 20-UMLP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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CAT25AM02C8CTR CAT25AM02C8CTR onsemi CAT25AM02.pdf Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25AM02C8CTR CAT25AM02C8CTR onsemi CAT25AM02.pdf Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25AM02C8ATR CAT25AM02C8ATR onsemi CAT25AM02.pdf Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25AM02C8ATR CAT25AM02C8ATR onsemi CAT25AM02.pdf Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MC33174P MC33174P onsemi mc33171-d.pdf Description: IC OP AMP 4CH 14-PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-PDIP
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Produkt ist nicht verfügbar
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MC33174VDR2 MC33174VDR2 onsemi mc33171-d.pdf Description: IC OP AMP 4CH 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Produkt ist nicht verfügbar
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MC33174VDG MC33174VDG onsemi mc33171-d.pdf Description: IC OP AMP 4CH 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Produkt ist nicht verfügbar
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FDMS8350LET40 FDMS8350LET40 onsemi fdms8350let40-d.pdf Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
Produkt ist nicht verfügbar
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FDMS8350LET40 FDMS8350LET40 onsemi fdms8350let40-d.pdf Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
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MOC3012SM MOC3012SM onsemi moc3023m-d.pdf Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
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MOC3012TVM MOC3012TVM onsemi moc3023m-d.pdf Description: OPTOISOLATOR 4.17KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
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BZX85C5V6-T50R BZX85C5V6-T50R onsemi FAIRS45281-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 5.6V 1W DO41
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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74ABT16543CSSC 74ABT16543CSSC onsemi 74ABT16543.pdf Description: IC TXRX NON-INVERT 5.5V 56SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-SSOP
Produkt ist nicht verfügbar
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74ABT16543CSSCX 74ABT16543CSSCX onsemi 74ABT16543.pdf Description: IC TXRX NON-INVERT 5.5V 56SSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-SSOP
Produkt ist nicht verfügbar
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NCP4671DSN09T1G NCP4671DSN09T1G onsemi NCP4671.pdf Description: IC REG LINEAR 0.9V 400MA SOT23-5
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 80dB ~ 50dB (1kHz)
Voltage Dropout (Max): 0.3V @ 400mA
Protection Features: Over Current, Under Voltage Lockout (UVLO)
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KSP2222ABU KSP2222ABU onsemi ksp2222a-d.pdf Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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MBRS320T3 MBRS320T3 onsemi mbrs340t3-d.pdf Description: DIODE SCHOTTKY 20V 4A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Produkt ist nicht verfügbar
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MURA215T3G mura215t3-d.pdf
MURA215T3G
Hersteller: onsemi
Description: DIODE GEN PURP 150V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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BZX85C3V9 BZX85C3V3-C56.pdf
BZX85C3V9
Hersteller: onsemi
Description: DIODE ZENER 3.9V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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NCV8664CDT50RKG ncv8664c-d.pdf
NCV8664CDT50RKG
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Qualification: AEC-Q100
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NCV8664CDT50RKG ncv8664c-d.pdf
NCV8664CDT50RKG
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Qualification: AEC-Q100
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SECO-HVDCDC1362-40W15V-GEVB SECO-HVDCDC1362-40W15V-GEVB_TEST_PROCEDURE.PDF
SECO-HVDCDC1362-40W15V-GEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCV1362 NCP1362
Packaging: Box
Voltage - Output: 15V
Voltage - Input: 240V ~ 900V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCV1362, NCP1362
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Power - Output: 40 W
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NTMFS5H600NLT1G ntmfs5h600nl-d.pdf
NTMFS5H600NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Produkt ist nicht verfügbar
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NTMFS5H600NLT1G-IRH1 NTMFS5H600NL-D.PDF
NTMFS5H600NLT1G-IRH1
Hersteller: onsemi
Description: T8 60V LOW COSS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Produkt ist nicht verfügbar
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NTMFS5H600NLT1G-IRH1 NTMFS5H600NL-D.PDF
NTMFS5H600NLT1G-IRH1
Hersteller: onsemi
Description: T8 60V LOW COSS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
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3+8.38 EUR
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50+4.3 EUR
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NTMFS5H600NLT3G ntmfs5h600nl-d.pdf
NTMFS5H600NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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NTMFS5H600NLT3G ntmfs5h600nl-d.pdf
NTMFS5H600NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H852NLT1G nvmfs6h852nl-d.pdf
NVMFS6H852NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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NVMFS6H852NLT1G nvmfs6h852nl-d.pdf
NVMFS6H852NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.84 EUR
12+1.8 EUR
50+1.33 EUR
100+1.19 EUR
Mindestbestellmenge: 8 Stücke
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NTMFS6H801NLT1G ntmfs6h801nl-d.pdf
NTMFS6H801NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
auf Bestellung 44138 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.68 EUR
10+3.69 EUR
100+2.56 EUR
500+2.07 EUR
Mindestbestellmenge: 4 Stücke
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NTMFS5C406NLT1G ntmfs5c406nl-d.pdf
NTMFS5C406NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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NTMFS5C406NLT1G ntmfs5c406nl-d.pdf
NTMFS5C406NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.89 EUR
10+4.52 EUR
100+3.17 EUR
500+2.58 EUR
Mindestbestellmenge: 4 Stücke
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NTMFS5H400NLT3G ntmfs5h400nl-d.pdf
NTMFS5H400NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+2.62 EUR
Mindestbestellmenge: 5000 Stücke
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NTMFS5H400NLT3G ntmfs5h400nl-d.pdf
NTMFS5H400NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
auf Bestellung 11845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.94 EUR
10+5.12 EUR
25+4.38 EUR
100+3.55 EUR
250+3.14 EUR
500+2.89 EUR
1000+2.68 EUR
2500+2.62 EUR
Mindestbestellmenge: 3 Stücke
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NTMFS5H409NLT3G ntmfs5h409nl-d.pdf
NTMFS5H409NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.9 EUR
Mindestbestellmenge: 5000 Stücke
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NTMFS5H409NLT3G ntmfs5h409nl-d.pdf
NTMFS5H409NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 49829 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.33 EUR
10+4.02 EUR
25+3.43 EUR
100+2.75 EUR
250+2.42 EUR
500+2.21 EUR
1000+2.03 EUR
2500+1.9 EUR
Mindestbestellmenge: 4 Stücke
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NTMFS5H431NLT1G ntmfs5h431nl-d.pdf
NTMFS5H431NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.89 EUR
Mindestbestellmenge: 1500 Stücke
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NTMFS5H431NLT1G ntmfs5h431nl-d.pdf
NTMFS5H431NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
auf Bestellung 1819 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.39 EUR
10+2.15 EUR
50+1.62 EUR
100+1.44 EUR
500+1.13 EUR
Mindestbestellmenge: 7 Stücke
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NTMFS5C645NLT1G ntmfs5c645nl-d.pdf
NTMFS5C645NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+2.24 EUR
Mindestbestellmenge: 1500 Stücke
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NTMFS5C645NLT1G ntmfs5c645nl-d.pdf
NTMFS5C645NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 1644 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.68 EUR
10+4.36 EUR
100+3.05 EUR
500+2.49 EUR
Mindestbestellmenge: 4 Stücke
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NTMFS6H864NLT1G ntmfs6h864nl-d.pdf
NTMFS6H864NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
auf Bestellung 19919 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
19+1.17 EUR
100+0.76 EUR
500+0.58 EUR
Mindestbestellmenge: 12 Stücke
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NTMFS6H818NLT1G ntmfs6h818nl-d.pdf
NTMFS6H818NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.51 EUR
3000+1.45 EUR
Mindestbestellmenge: 1500 Stücke
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NTMFS6H818NLT1G ntmfs6h818nl-d.pdf
NTMFS6H818NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
auf Bestellung 4420 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.3 EUR
10+3.43 EUR
50+2.62 EUR
100+2.36 EUR
500+1.89 EUR
Mindestbestellmenge: 4 Stücke
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NTMFS6H818NT1G ntmfs6h818n-d.pdf
NTMFS6H818NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.46 EUR
Mindestbestellmenge: 1500 Stücke
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NTMFS6H818NT1G ntmfs6h818n-d.pdf
NTMFS6H818NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
auf Bestellung 2895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.66 EUR
10+3.01 EUR
100+2.06 EUR
500+1.65 EUR
Mindestbestellmenge: 5 Stücke
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NTMFS6H858NT1G ntmfs6h858n-d.pdf
NTMFS6H858NT1G
Hersteller: onsemi
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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NTMFS6H858NT1G ntmfs6h858n-d.pdf
NTMFS6H858NT1G
Hersteller: onsemi
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFS6H852NLT1G ntmfs6h852nl-d.pdf
NTMFS6H852NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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NTMFS6H852NLT1G ntmfs6h852nl-d.pdf
NTMFS6H852NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
auf Bestellung 1492 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
Mindestbestellmenge: 10 Stücke
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NTMFS6H852NT1G ntmfs6h852n-d.pdf
NTMFS6H852NT1G
Hersteller: onsemi
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.77 EUR
Mindestbestellmenge: 1500 Stücke
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NTMFS6H852NT1G ntmfs6h852n-d.pdf
NTMFS6H852NT1G
Hersteller: onsemi
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
15+1.44 EUR
100+1.12 EUR
500+0.95 EUR
Mindestbestellmenge: 12 Stücke
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NTMFS6H848NLT1G ntmfs6h848nl-d.pdf
NTMFS6H848NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.88 EUR
3000+0.81 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H848NLT1G ntmfs6h848nl-d.pdf
NTMFS6H848NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
auf Bestellung 13831 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.33 EUR
10+2.11 EUR
50+1.58 EUR
100+1.42 EUR
500+1.11 EUR
Mindestbestellmenge: 7 Stücke
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NTMFS6H800NLT1G ntmfs6h800nl-d.pdf
NTMFS6H800NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+2.67 EUR
Mindestbestellmenge: 1500 Stücke
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NTMFS6H800NLT1G ntmfs6h800nl-d.pdf
NTMFS6H800NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 5815 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.35 EUR
10+5.5 EUR
50+4.27 EUR
100+3.87 EUR
500+3.27 EUR
Mindestbestellmenge: 3 Stücke
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SZBZX84C3V9ET3G bzx84c2v4et1-d.pdf
SZBZX84C3V9ET3G
Hersteller: onsemi
Description: DIODE ZENER 3.9V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.064 EUR
Mindestbestellmenge: 10000 Stücke
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SZBZX84C3V9ET3G bzx84c2v4et1-d.pdf
SZBZX84C3V9ET3G
Hersteller: onsemi
Description: DIODE ZENER 3.9V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
88+0.24 EUR
124+0.17 EUR
143+0.14 EUR
500+0.11 EUR
Mindestbestellmenge: 53 Stücke
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SZBZX84C3V9LT1G bzx84c2v4lt1-d.pdf
SZBZX84C3V9LT1G
Hersteller: onsemi
Description: DIODE ZENER 3.9V 250MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.063 EUR
Mindestbestellmenge: 3000 Stücke
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SZBZX84C3V9LT1G bzx84c2v4lt1-d.pdf
SZBZX84C3V9LT1G
Hersteller: onsemi
Description: DIODE ZENER 3.9V 250MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 5850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
107+0.2 EUR
149+0.14 EUR
173+0.12 EUR
500+0.088 EUR
Mindestbestellmenge: 67 Stücke
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FSA9280AUMX fsa9288a-d.pdf
FSA9280AUMX
Hersteller: onsemi
Description: IC USB MULTIMEDIA SWITCH 20-UMLP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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CAT25AM02C8CTR CAT25AM02.pdf
CAT25AM02C8CTR
Hersteller: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25AM02C8CTR CAT25AM02.pdf
CAT25AM02C8CTR
Hersteller: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25AM02C8ATR CAT25AM02.pdf
CAT25AM02C8ATR
Hersteller: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25AM02C8ATR CAT25AM02.pdf
CAT25AM02C8ATR
Hersteller: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MC33174P mc33171-d.pdf
MC33174P
Hersteller: onsemi
Description: IC OP AMP 4CH 14-PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-PDIP
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Produkt ist nicht verfügbar
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MC33174VDR2 mc33171-d.pdf
MC33174VDR2
Hersteller: onsemi
Description: IC OP AMP 4CH 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Produkt ist nicht verfügbar
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MC33174VDG mc33171-d.pdf
MC33174VDG
Hersteller: onsemi
Description: IC OP AMP 4CH 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Produkt ist nicht verfügbar
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FDMS8350LET40 fdms8350let40-d.pdf
FDMS8350LET40
Hersteller: onsemi
Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
Produkt ist nicht verfügbar
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FDMS8350LET40 fdms8350let40-d.pdf
FDMS8350LET40
Hersteller: onsemi
Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
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AnzahlPrivatkunde
3+9.89 EUR
10+6.59 EUR
100+4.72 EUR
500+3.94 EUR
1000+3.87 EUR
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MOC3012SM moc3023m-d.pdf
MOC3012SM
Hersteller: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 1936 Stücke:
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12+1.82 EUR
50+0.82 EUR
100+0.74 EUR
500+0.6 EUR
1000+0.56 EUR
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MOC3012TVM moc3023m-d.pdf
MOC3012TVM
Hersteller: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 1000 Stücke:
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14+1.55 EUR
23+0.94 EUR
100+0.63 EUR
500+0.51 EUR
1000+0.48 EUR
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BZX85C5V6-T50R FAIRS45281-1.pdf?t.download=true&u=5oefqw
BZX85C5V6-T50R
Hersteller: onsemi
Description: DIODE ZENER 5.6V 1W DO41
Tolerance: ±7%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 42000 Stücke:
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5492+0.098 EUR
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74ABT16543CSSC 74ABT16543.pdf
74ABT16543CSSC
Hersteller: onsemi
Description: IC TXRX NON-INVERT 5.5V 56SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-SSOP
Produkt ist nicht verfügbar
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74ABT16543CSSCX 74ABT16543.pdf
74ABT16543CSSCX
Hersteller: onsemi
Description: IC TXRX NON-INVERT 5.5V 56SSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-SSOP
Produkt ist nicht verfügbar
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NCP4671DSN09T1G NCP4671.pdf
NCP4671DSN09T1G
Hersteller: onsemi
Description: IC REG LINEAR 0.9V 400MA SOT23-5
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 80dB ~ 50dB (1kHz)
Voltage Dropout (Max): 0.3V @ 400mA
Protection Features: Over Current, Under Voltage Lockout (UVLO)
auf Bestellung 3000 Stücke:
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650+0.92 EUR
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KSP2222ABU ksp2222a-d.pdf
KSP2222ABU
Hersteller: onsemi
Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 7655 Stücke:
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32+0.67 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
2000+0.15 EUR
5000+0.13 EUR
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MBRS320T3 mbrs340t3-d.pdf
MBRS320T3
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 4A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Produkt ist nicht verfügbar
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