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NCV8164ASN280T1G NCV8164ASN280T1G onsemi ncv8164-d.pdf Description: LDO 300 MA AD 2.8V ULTRA-LOW NOI
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable, Power Good
Grade: Automotive
Voltage Dropout (Max): 0.185V @ 300mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 83991 Stücke:
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18+1.00 EUR
21+0.87 EUR
25+0.82 EUR
100+0.62 EUR
250+0.53 EUR
500+0.50 EUR
1000+0.38 EUR
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NCV8752BSN28T1G NCV8752BSN28T1G onsemi ncv8752-d.pdf Description: IC REG LINEAR 2.8V 200MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable, Power Good
Grade: Automotive
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100
auf Bestellung 9000 Stücke:
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3000+0.46 EUR
6000+0.43 EUR
9000+0.42 EUR
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NCV8752BSN28T1G NCV8752BSN28T1G onsemi ncv8752-d.pdf Description: IC REG LINEAR 2.8V 200MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable, Power Good
Grade: Automotive
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100
auf Bestellung 11980 Stücke:
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10+1.90 EUR
16+1.14 EUR
25+0.95 EUR
100+0.74 EUR
250+0.64 EUR
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1000+0.53 EUR
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NCV500SN28T1G NCV500SN28T1G onsemi ncp500-d.pdf Description: IC REG LINEAR 2.8V 150MA 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
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6000+0.35 EUR
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NCV500SN28T1G NCV500SN28T1G onsemi ncp500-d.pdf Description: IC REG LINEAR 2.8V 150MA 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
auf Bestellung 14950 Stücke:
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250+0.55 EUR
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1000+0.44 EUR
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NCV300LSN28T1G NCV300LSN28T1G onsemi ncp300-d.pdf Description: IC SUPERVISOR 1 CHANNEL 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Voltage - Threshold: 2.8V
Supplier Device Package: 5-TSOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MMSZ5V6T3G MMSZ5V6T3G onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 5.6V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 23793 Stücke:
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127+0.14 EUR
245+0.07 EUR
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1000+0.06 EUR
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5000+0.05 EUR
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KSD362RTU KSD362RTU onsemi KSD362.pdf Description: TRANS NPN 70V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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FJAF4210OTU FJAF4210OTU onsemi FAIRS27911-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 140V 10A TO-3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 80 W
auf Bestellung 1591 Stücke:
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RFP8P05 RFP8P05 onsemi RFD8P05,05SM_RFP8P05.pdf Description: MOSFET P-CH 50V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Produkt ist nicht verfügbar
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FCP260N60E FCP260N60E onsemi FCPF260N60E-D.PDF Description: MOSFET N-CH 600V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 190 Stücke:
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MARS1-AR0231AT7CS-GEVB onsemi Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Utilized IC / Part: AR0231AT
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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FOD3150S FOD3150S onsemi fod3150-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 991 Stücke:
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FOD3150V FOD3150V onsemi fod3150-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 701 Stücke:
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MURA215T3G MURA215T3G onsemi mura215t3-d.pdf Description: DIODE GEN PURP 150V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
auf Bestellung 158121 Stücke:
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2435+0.20 EUR
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BZX85C3V9 BZX85C3V9 onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 3.9V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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NCV8664CDT50RKG NCV8664CDT50RKG onsemi ncv8664c-d.pdf Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 22500 Stücke:
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2500+0.89 EUR
5000+0.86 EUR
12500+0.83 EUR
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NCV8664CDT50RKG NCV8664CDT50RKG onsemi ncv8664c-d.pdf Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 23568 Stücke:
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8+2.22 EUR
10+1.98 EUR
25+1.88 EUR
100+1.44 EUR
250+1.28 EUR
500+1.21 EUR
1000+0.94 EUR
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SECO-HVDCDC1362-40W15V-GEVB SECO-HVDCDC1362-40W15V-GEVB onsemi SECO-HVDCDC1362-40W15V-GEVB_TEST_PROCEDURE.PDF Description: EVAL BOARD FOR HVDCDC3064
Packaging: Box
Voltage - Output: 15V
Voltage - Input: 240V ~ 900V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCV1362, NCP1362
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Power - Output: 40 W
Produkt ist nicht verfügbar
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NTMFS5H600NLT1G NTMFS5H600NLT1G onsemi ntmfs5h600nl-d.pdf Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
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NTMFS5H600NLT1G-IRH1 NTMFS5H600NLT1G-IRH1 onsemi NTMFS5H600NL-D.PDF Description: T8 60V LOW COSS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Produkt ist nicht verfügbar
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NTMFS5H600NLT1G-IRH1 NTMFS5H600NLT1G-IRH1 onsemi NTMFS5H600NL-D.PDF Description: T8 60V LOW COSS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
auf Bestellung 1498 Stücke:
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100+2.81 EUR
500+2.30 EUR
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NTMFS5H600NLT3G NTMFS5H600NLT3G onsemi ntmfs5h600nl-d.pdf Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
auf Bestellung 10000 Stücke:
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5000+2.11 EUR
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NTMFS5H600NLT3G NTMFS5H600NLT3G onsemi ntmfs5h600nl-d.pdf Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
auf Bestellung 10000 Stücke:
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3+6.12 EUR
10+4.01 EUR
100+2.81 EUR
500+2.30 EUR
1000+2.14 EUR
2000+2.11 EUR
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NVMFS6H852NLT1G NVMFS6H852NLT1G onsemi nvmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.62 EUR
Mindestbestellmenge: 1500
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NVMFS6H852NLT1G NVMFS6H852NLT1G onsemi nvmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1559 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.20 EUR
13+1.38 EUR
100+0.91 EUR
500+0.71 EUR
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NTMFS6H801NLT1G NTMFS6H801NLT1G onsemi ntmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
auf Bestellung 44138 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.77 EUR
10+3.10 EUR
100+2.15 EUR
500+1.74 EUR
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NTMFS5C406NLT1G NTMFS5C406NLT1G onsemi ntmfs5c406nl-d.pdf Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5C406NLT1G NTMFS5C406NLT1G onsemi ntmfs5c406nl-d.pdf Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.79 EUR
10+3.80 EUR
100+2.66 EUR
500+2.17 EUR
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NTMFS5H400NLT3G NTMFS5H400NLT3G onsemi ntmfs5h400nl-d.pdf Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+2.20 EUR
Mindestbestellmenge: 5000
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NTMFS5H400NLT3G NTMFS5H400NLT3G onsemi ntmfs5h400nl-d.pdf Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
auf Bestellung 11845 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.67 EUR
10+4.30 EUR
25+3.68 EUR
100+2.98 EUR
250+2.64 EUR
500+2.43 EUR
1000+2.25 EUR
2500+2.20 EUR
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NTMFS5H409NLT3G NTMFS5H409NLT3G onsemi ntmfs5h409nl-d.pdf Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.60 EUR
Mindestbestellmenge: 5000
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NTMFS5H409NLT3G NTMFS5H409NLT3G onsemi ntmfs5h409nl-d.pdf Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 49829 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.32 EUR
10+3.38 EUR
25+2.88 EUR
100+2.31 EUR
250+2.03 EUR
500+1.86 EUR
1000+1.71 EUR
2500+1.60 EUR
Mindestbestellmenge: 4
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NTMFS5H431NLT1G NTMFS5H431NLT1G onsemi ntmfs5h431nl-d.pdf Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.68 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5H431NLT1G NTMFS5H431NLT1G onsemi ntmfs5h431nl-d.pdf Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
auf Bestellung 1867 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.97 EUR
13+1.38 EUR
100+1.00 EUR
500+0.83 EUR
Mindestbestellmenge: 9
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NTMFS5C645NLT1G NTMFS5C645NLT1G onsemi ntmfs5c645nl-d.pdf Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.88 EUR
Mindestbestellmenge: 1500
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NTMFS5C645NLT1G NTMFS5C645NLT1G onsemi ntmfs5c645nl-d.pdf Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 1644 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.61 EUR
10+3.66 EUR
100+2.56 EUR
500+2.09 EUR
Mindestbestellmenge: 4
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NTMFS6H864NLT1G NTMFS6H864NLT1G onsemi ntmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
auf Bestellung 1495 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
14+1.28 EUR
100+0.89 EUR
500+0.74 EUR
Mindestbestellmenge: 12
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NTMFS6H818NLT1G NTMFS6H818NLT1G onsemi ntmfs6h818nl-d.pdf Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.25 EUR
3000+1.22 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H818NLT1G NTMFS6H818NLT1G onsemi ntmfs6h818nl-d.pdf Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
auf Bestellung 30950 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.41 EUR
10+2.33 EUR
100+1.66 EUR
500+1.41 EUR
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NTMFS6H818NT1G NTMFS6H818NT1G onsemi ntmfs6h818n-d.pdf Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H818NT1G NTMFS6H818NT1G onsemi ntmfs6h818n-d.pdf Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H858NT1G NTMFS6H858NT1G onsemi ntmfs6h858n-d.pdf Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H858NT1G NTMFS6H858NT1G onsemi ntmfs6h858n-d.pdf Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H852NLT1G NTMFS6H852NLT1G onsemi ntmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
auf Bestellung 66000 Stücke:
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3000+0.53 EUR
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7500+0.48 EUR
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NTMFS6H852NLT1G NTMFS6H852NLT1G onsemi ntmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
auf Bestellung 66401 Stücke:
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500+0.67 EUR
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NTMFS6H852NT1G NTMFS6H852NT1G onsemi ntmfs6h852n-d.pdf Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
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NTMFS6H852NT1G NTMFS6H852NT1G onsemi ntmfs6h852n-d.pdf Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
auf Bestellung 1500 Stücke:
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NTMFS6H848NLT1G NTMFS6H848NLT1G onsemi ntmfs6h848nl-d.pdf Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFS6H848NLT1G NTMFS6H848NLT1G onsemi ntmfs6h848nl-d.pdf Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFS6H800NLT1G NTMFS6H800NLT1G onsemi ntmfs6h800nl-d.pdf Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 3000 Stücke:
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NTMFS6H800NLT1G NTMFS6H800NLT1G onsemi ntmfs6h800nl-d.pdf Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 4421 Stücke:
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SZBZX84C3V9ET3G SZBZX84C3V9ET3G onsemi bzx84c2v4et1-d.pdf Description: DIODE ZENER 3.9V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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SZBZX84C3V9ET3G SZBZX84C3V9ET3G onsemi bzx84c2v4et1-d.pdf Description: DIODE ZENER 3.9V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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500+0.06 EUR
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SZBZX84C3V9LT1G SZBZX84C3V9LT1G onsemi bzx84c2v4lt1-d.pdf Description: DIODE ZENER 3.9V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
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3000+0.04 EUR
6000+0.03 EUR
9000+0.03 EUR
Mindestbestellmenge: 3000
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SZBZX84C3V9LT1G SZBZX84C3V9LT1G onsemi bzx84c2v4lt1-d.pdf Description: DIODE ZENER 3.9V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 14353 Stücke:
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319+0.06 EUR
500+0.05 EUR
1000+0.05 EUR
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FSA9280AUMX FSA9280AUMX onsemi fsa9288a-d.pdf Description: IC USB MULTIMEDIA SWITCH 20-UMLP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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CAT25AM02C8CTR CAT25AM02C8CTR onsemi CAT25AM02.pdf Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25AM02C8CTR CAT25AM02C8CTR onsemi CAT25AM02.pdf Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25AM02C8ATR CAT25AM02C8ATR onsemi CAT25AM02.pdf Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NCV8164ASN280T1G ncv8164-d.pdf
NCV8164ASN280T1G
Hersteller: onsemi
Description: LDO 300 MA AD 2.8V ULTRA-LOW NOI
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable, Power Good
Grade: Automotive
Voltage Dropout (Max): 0.185V @ 300mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 83991 Stücke:
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Anzahl Preis
18+1.00 EUR
21+0.87 EUR
25+0.82 EUR
100+0.62 EUR
250+0.53 EUR
500+0.50 EUR
1000+0.38 EUR
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NCV8752BSN28T1G ncv8752-d.pdf
NCV8752BSN28T1G
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 200MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable, Power Good
Grade: Automotive
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.46 EUR
6000+0.43 EUR
9000+0.42 EUR
Mindestbestellmenge: 3000
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NCV8752BSN28T1G ncv8752-d.pdf
NCV8752BSN28T1G
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 200MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable, Power Good
Grade: Automotive
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100
auf Bestellung 11980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.90 EUR
16+1.14 EUR
25+0.95 EUR
100+0.74 EUR
250+0.64 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 10
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NCV500SN28T1G ncp500-d.pdf
NCV500SN28T1G
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 150MA 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
6000+0.35 EUR
9000+0.33 EUR
Mindestbestellmenge: 3000
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NCV500SN28T1G ncp500-d.pdf
NCV500SN28T1G
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 150MA 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Grade: Automotive
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Qualification: AEC-Q100
auf Bestellung 14950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
18+1.02 EUR
25+0.84 EUR
100+0.65 EUR
250+0.55 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 11
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NCV300LSN28T1G ncp300-d.pdf
NCV300LSN28T1G
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Voltage - Threshold: 2.8V
Supplier Device Package: 5-TSOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MMSZ5V6T3G mmsz2v4t1-d.pdf
MMSZ5V6T3G
Hersteller: onsemi
Description: DIODE ZENER 5.6V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 23793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
127+0.14 EUR
245+0.07 EUR
500+0.07 EUR
1000+0.06 EUR
2000+0.05 EUR
5000+0.05 EUR
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KSD362RTU KSD362.pdf
KSD362RTU
Hersteller: onsemi
Description: TRANS NPN 70V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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FJAF4210OTU FAIRS27911-1.pdf?t.download=true&u=5oefqw
FJAF4210OTU
Hersteller: onsemi
Description: TRANS PNP 140V 10A TO-3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PF
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 80 W
auf Bestellung 1591 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
224+2.18 EUR
Mindestbestellmenge: 224
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RFP8P05 RFD8P05,05SM_RFP8P05.pdf
RFP8P05
Hersteller: onsemi
Description: MOSFET P-CH 50V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Produkt ist nicht verfügbar
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FCP260N60E FCPF260N60E-D.PDF
FCP260N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.28 EUR
50+3.21 EUR
100+2.91 EUR
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MARS1-AR0231AT7CS-GEVB
Hersteller: onsemi
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Utilized IC / Part: AR0231AT
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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FOD3150S fod3150-d.pdf
FOD3150S
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
50+2.05 EUR
100+1.91 EUR
500+1.65 EUR
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FOD3150V fod3150-d.pdf
FOD3150V
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
10+1.88 EUR
100+1.44 EUR
500+1.24 EUR
Mindestbestellmenge: 7
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MURA215T3G mura215t3-d.pdf
MURA215T3G
Hersteller: onsemi
Description: DIODE GEN PURP 150V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
auf Bestellung 158121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2435+0.20 EUR
Mindestbestellmenge: 2435
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BZX85C3V9 BZX85C3V3-C56.pdf
BZX85C3V9
Hersteller: onsemi
Description: DIODE ZENER 3.9V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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NCV8664CDT50RKG ncv8664c-d.pdf
NCV8664CDT50RKG
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.89 EUR
5000+0.86 EUR
12500+0.83 EUR
Mindestbestellmenge: 2500
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NCV8664CDT50RKG ncv8664c-d.pdf
NCV8664CDT50RKG
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 23568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
10+1.98 EUR
25+1.88 EUR
100+1.44 EUR
250+1.28 EUR
500+1.21 EUR
1000+0.94 EUR
Mindestbestellmenge: 8
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SECO-HVDCDC1362-40W15V-GEVB SECO-HVDCDC1362-40W15V-GEVB_TEST_PROCEDURE.PDF
SECO-HVDCDC1362-40W15V-GEVB
Hersteller: onsemi
Description: EVAL BOARD FOR HVDCDC3064
Packaging: Box
Voltage - Output: 15V
Voltage - Input: 240V ~ 900V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCV1362, NCP1362
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Power - Output: 40 W
Produkt ist nicht verfügbar
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NTMFS5H600NLT1G ntmfs5h600nl-d.pdf
NTMFS5H600NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+2.10 EUR
Mindestbestellmenge: 1500
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NTMFS5H600NLT1G-IRH1 NTMFS5H600NL-D.PDF
NTMFS5H600NLT1G-IRH1
Hersteller: onsemi
Description: T8 60V LOW COSS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Produkt ist nicht verfügbar
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NTMFS5H600NLT1G-IRH1 NTMFS5H600NL-D.PDF
NTMFS5H600NLT1G-IRH1
Hersteller: onsemi
Description: T8 60V LOW COSS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.12 EUR
10+4.01 EUR
100+2.81 EUR
500+2.30 EUR
Mindestbestellmenge: 3
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NTMFS5H600NLT3G ntmfs5h600nl-d.pdf
NTMFS5H600NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.11 EUR
Mindestbestellmenge: 5000
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NTMFS5H600NLT3G ntmfs5h600nl-d.pdf
NTMFS5H600NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.12 EUR
10+4.01 EUR
100+2.81 EUR
500+2.30 EUR
1000+2.14 EUR
2000+2.11 EUR
Mindestbestellmenge: 3
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NVMFS6H852NLT1G nvmfs6h852nl-d.pdf
NVMFS6H852NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.62 EUR
Mindestbestellmenge: 1500
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NVMFS6H852NLT1G nvmfs6h852nl-d.pdf
NVMFS6H852NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.20 EUR
13+1.38 EUR
100+0.91 EUR
500+0.71 EUR
Mindestbestellmenge: 8
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NTMFS6H801NLT1G ntmfs6h801nl-d.pdf
NTMFS6H801NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
auf Bestellung 44138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.77 EUR
10+3.10 EUR
100+2.15 EUR
500+1.74 EUR
Mindestbestellmenge: 4
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NTMFS5C406NLT1G ntmfs5c406nl-d.pdf
NTMFS5C406NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Produkt ist nicht verfügbar
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NTMFS5C406NLT1G ntmfs5c406nl-d.pdf
NTMFS5C406NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.79 EUR
10+3.80 EUR
100+2.66 EUR
500+2.17 EUR
Mindestbestellmenge: 4
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NTMFS5H400NLT3G ntmfs5h400nl-d.pdf
NTMFS5H400NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.20 EUR
Mindestbestellmenge: 5000
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NTMFS5H400NLT3G ntmfs5h400nl-d.pdf
NTMFS5H400NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
auf Bestellung 11845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.67 EUR
10+4.30 EUR
25+3.68 EUR
100+2.98 EUR
250+2.64 EUR
500+2.43 EUR
1000+2.25 EUR
2500+2.20 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5H409NLT3G ntmfs5h409nl-d.pdf
NTMFS5H409NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.60 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5H409NLT3G ntmfs5h409nl-d.pdf
NTMFS5H409NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 49829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.32 EUR
10+3.38 EUR
25+2.88 EUR
100+2.31 EUR
250+2.03 EUR
500+1.86 EUR
1000+1.71 EUR
2500+1.60 EUR
Mindestbestellmenge: 4
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NTMFS5H431NLT1G ntmfs5h431nl-d.pdf
NTMFS5H431NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.68 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5H431NLT1G ntmfs5h431nl-d.pdf
NTMFS5H431NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
auf Bestellung 1867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
13+1.38 EUR
100+1.00 EUR
500+0.83 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5C645NLT1G ntmfs5c645nl-d.pdf
NTMFS5C645NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.88 EUR
Mindestbestellmenge: 1500
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NTMFS5C645NLT1G ntmfs5c645nl-d.pdf
NTMFS5C645NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 1644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.61 EUR
10+3.66 EUR
100+2.56 EUR
500+2.09 EUR
Mindestbestellmenge: 4
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NTMFS6H864NLT1G ntmfs6h864nl-d.pdf
NTMFS6H864NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
auf Bestellung 1495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
14+1.28 EUR
100+0.89 EUR
500+0.74 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H818NLT1G ntmfs6h818nl-d.pdf
NTMFS6H818NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.25 EUR
3000+1.22 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H818NLT1G ntmfs6h818nl-d.pdf
NTMFS6H818NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
auf Bestellung 30950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.33 EUR
100+1.66 EUR
500+1.41 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H818NT1G ntmfs6h818n-d.pdf
NTMFS6H818NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H818NT1G ntmfs6h818n-d.pdf
NTMFS6H818NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H858NT1G ntmfs6h858n-d.pdf
NTMFS6H858NT1G
Hersteller: onsemi
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H858NT1G ntmfs6h858n-d.pdf
NTMFS6H858NT1G
Hersteller: onsemi
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFS6H852NLT1G ntmfs6h852nl-d.pdf
NTMFS6H852NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.58 EUR
3000+0.53 EUR
4500+0.51 EUR
7500+0.48 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H852NLT1G ntmfs6h852nl-d.pdf
NTMFS6H852NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
auf Bestellung 66401 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
14+1.31 EUR
100+0.87 EUR
500+0.67 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H852NT1G ntmfs6h852n-d.pdf
NTMFS6H852NT1G
Hersteller: onsemi
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.65 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H852NT1G ntmfs6h852n-d.pdf
NTMFS6H852NT1G
Hersteller: onsemi
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
15+1.21 EUR
100+0.94 EUR
500+0.80 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H848NLT1G ntmfs6h848nl-d.pdf
NTMFS6H848NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H848NLT1G ntmfs6h848nl-d.pdf
NTMFS6H848NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H800NLT1G ntmfs6h800nl-d.pdf
NTMFS6H800NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+2.09 EUR
Mindestbestellmenge: 1500
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NTMFS6H800NLT1G ntmfs6h800nl-d.pdf
NTMFS6H800NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
auf Bestellung 4421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.11 EUR
10+4.01 EUR
100+2.72 EUR
500+2.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C3V9ET3G bzx84c2v4et1-d.pdf
SZBZX84C3V9ET3G
Hersteller: onsemi
Description: DIODE ZENER 3.9V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.04 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C3V9ET3G bzx84c2v4et1-d.pdf
SZBZX84C3V9ET3G
Hersteller: onsemi
Description: DIODE ZENER 3.9V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
173+0.10 EUR
294+0.06 EUR
500+0.06 EUR
1000+0.06 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C3V9LT1G bzx84c2v4lt1-d.pdf
SZBZX84C3V9LT1G
Hersteller: onsemi
Description: DIODE ZENER 3.9V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.04 EUR
6000+0.03 EUR
9000+0.03 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C3V9LT1G bzx84c2v4lt1-d.pdf
SZBZX84C3V9LT1G
Hersteller: onsemi
Description: DIODE ZENER 3.9V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 14353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
154+0.11 EUR
319+0.06 EUR
500+0.05 EUR
1000+0.05 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
FSA9280AUMX fsa9288a-d.pdf
FSA9280AUMX
Hersteller: onsemi
Description: IC USB MULTIMEDIA SWITCH 20-UMLP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25AM02C8CTR CAT25AM02.pdf
CAT25AM02C8CTR
Hersteller: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25AM02C8CTR CAT25AM02.pdf
CAT25AM02C8CTR
Hersteller: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25AM02C8ATR CAT25AM02.pdf
CAT25AM02C8ATR
Hersteller: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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